KR102359818B1 - Light emitting device package and manufacturing method of light emitting device package - Google Patents

Abstract

A light emitting device package manufacturing method according to an embodiment includes a first frame including a first opening penetrating an upper surface and a lower surface, a second frame including a second opening penetrating the upper surface and a lower surface, the first frame and the second frame forming a body disposed therebetween and including a recess concave from an upper surface to a lower surface; providing the recess with an adhesive; A light emitting device including a first bonding unit and a second bonding unit is provided on the body, the first bonding unit is disposed over the first opening, the second bonding unit is disposed over the second opening, and the lower surface of the light emitting device is in contact with the adhesive attaching; curing the adhesive; providing a resin portion around the first and second bonding portions on the first and second frames; providing first and second conductive layers in the first and second openings, respectively; may include.

Description

Light emitting device package and manufacturing method thereof

The embodiment relates to a semiconductor device package, a method for manufacturing the semiconductor device package, and a light source device.

A semiconductor device including a compound such as GaN or AlGaN has many advantages, such as having a wide and easily adjustable band gap energy, and thus can be used in various ways as a light emitting device, a light receiving device, and various diodes.

In particular, light emitting devices such as light emitting diodes or laser diodes using group 3-5 or group 2-6 compound semiconductor materials have developed red, green, and It has the advantage of being able to implement light of various wavelength bands, such as blue and ultraviolet. In addition, a light emitting device such as a light emitting diode or a laser diode using a group 3-5 or group 2-6 compound semiconductor material may be implemented as a white light source with good efficiency by using a fluorescent material or combining colors. These light emitting devices have advantages of low power consumption, semi-permanent lifespan, fast response speed, safety, and environmental friendliness compared to conventional light sources such as fluorescent lamps and incandescent lamps.

In addition, when a light receiving device such as a photodetector or a solar cell is manufactured using a group 3-5 or group 2-6 compound semiconductor material, a photocurrent is generated by absorbing light in various wavelength ranges through the development of the device material. By doing so, light of various wavelength ranges from gamma rays to radio wavelength ranges can be used. In addition, such a light receiving element has advantages of fast response speed, safety, environmental friendliness, and easy adjustment of element materials, and thus can be easily used in power control or ultra-high frequency circuits or communication modules.

Therefore, the semiconductor device can replace a light emitting diode backlight, a fluorescent lamp or an incandescent light bulb that replaces a cold cathode fluorescence lamp (CCFL) constituting a transmission module of an optical communication means and a backlight of a liquid crystal display (LCD) display device. The application is expanding to white light emitting diode lighting devices, automobile headlights and traffic lights, and sensors that detect gas or fire. In addition, the application of the semiconductor device may be extended to high-frequency application circuits, other power control devices, and communication modules.

A light emitting device (Light Emitting Device) may be provided as a pn junction diode having a property of converting electrical energy into light energy by using, for example, a group 3-5 element or a group 2-6 element on the periodic table, Various wavelengths can be realized by adjusting the composition ratio.

For example, nitride semiconductors are receiving great attention in the field of developing optical devices and high-power electronic devices due to their high thermal stability and wide bandgap energy. In particular, a blue light emitting device, a green light emitting device, an ultraviolet (UV) light emitting device, and a red light emitting device using a nitride semiconductor have been commercialized and widely used.

For example, in the case of an ultraviolet light emitting device, it is a light emitting diode that emits light distributed in a wavelength range of 200 nm to 400 nm. can be used

Ultraviolet rays can be divided into UV-A (315nm~400nm), UV-B (280nm~315nm), and UV-C (200nm~280nm) in the order of the longest wavelength. The UV-A (315nm~400nm) area is applied in various fields such as industrial UV curing, printing ink curing, exposure machine, counterfeit detection, photocatalytic sterilization, special lighting (aquarium/agricultural use, etc.), and UV-B (280nm~315nm) ) area is used for medical purposes, and the UV-C (200nm~280nm) area is applied to air purification, water purification, and sterilization products.

Meanwhile, as a semiconductor device capable of providing a high output is requested, research on a semiconductor device capable of increasing the output by applying a high power is being conducted.

In addition, in a semiconductor device package, research is being conducted on a method for improving the light extraction efficiency of the semiconductor device and improving the luminous intensity at the package end. In addition, in a semiconductor device package, research is being conducted on a method for improving the bonding force between the package electrode and the semiconductor device.

In addition, in a semiconductor device package, research is being conducted on a method for reducing manufacturing cost and improving manufacturing yield by improving process efficiency and changing the structure.

The embodiment may provide a semiconductor device package capable of improving light extraction efficiency and electrical characteristics, a method for manufacturing the semiconductor device package, and a light source device.

The embodiment may provide a semiconductor device package, a semiconductor device package manufacturing method, and a light source device capable of improving process efficiency and suggesting a new package structure to reduce manufacturing cost and improve manufacturing yield.

The embodiment may provide a semiconductor device package and a method of manufacturing a semiconductor device package capable of preventing a re-melting phenomenon from occurring in a bonding region of the semiconductor device package in a process in which the semiconductor device package is re-bonded to a substrate or the like. have.

A light emitting device package manufacturing method according to an embodiment includes a first frame including a first opening penetrating an upper surface and a lower surface, a second frame including a second opening penetrating the upper surface and a lower surface, the first frame and the second frame forming a body disposed between the two frames and including a recess concave from an upper surface to a lower surface; providing an adhesive to the recess; A light emitting device including a first bonding portion and a second bonding portion is provided on the body, the first bonding portion is disposed on the first opening, the second bonding portion is disposed on the second opening, and a step of attaching the lower surface in contact with the adhesive; curing the adhesive; providing a resin part around the first and second bonding parts on the first and second frames; providing first and second conductive layers in the first and second openings, respectively; may include.

A light emitting device package manufacturing method according to an embodiment includes a first frame including a first opening penetrating an upper surface and a lower surface, a second frame including a second opening penetrating the upper surface and a lower surface, the first frame and the second frame providing a package body disposed between the two frames and including a body including a recess concave from an upper surface to a lower surface; providing an adhesive to the recess of the body; A light emitting device including a first bonding portion and a second bonding portion disposed on a lower surface is provided on the package body, the first bonding portion is disposed on the first opening portion, the second bonding portion is disposed on the second opening portion, and , the step of attaching the lower surface of the light emitting device in direct contact with the adhesive; providing a resin part between an upper surface of the first frame and a side surface of the first bonding unit and between an upper surface of the second frame and a side surface of the second bonding unit; providing a first conductive layer in the first opening and a second conductive layer in the second opening; may include

According to an embodiment, the resin part is disposed to be spaced apart from the first opening and spaced apart from the first upper recess and the second opening provided concavely from the upper surface of the first frame to the lower surface of the first frame, It may be formed in a second upper recess provided to be concave in a direction from an upper surface of the second frame to a lower surface of the second frame.

The method for manufacturing a light emitting device package according to an embodiment may further include, after the step of providing the resin part, a step of providing a molding part on the light emitting device.

In the light emitting device package manufacturing method according to an embodiment, after the step of providing a first conductive layer in the first opening and providing a second conductive layer in the second opening, the step of providing a molding part on the light emitting device is further performed. may include

In example embodiments, the first conductive layer and the second conductive layer may be provided in the first opening and the second opening in the form of a conductive paste.

According to an embodiment, the providing of the first conductive layer in the first opening and the second conductive layer in the second opening may include: providing a first conductive paste to the first and second openings; and providing a second conductive paste to the first and second openings. and, the first conductive paste and the second conductive paste may include different materials.

A light emitting device package according to an embodiment includes first and second frames spaced apart from each other and including first and second openings, respectively; a body disposed between the first and second frames and including a recess; an adhesive disposed over the recess; a light emitting device disposed on the adhesive and including first and second bonding parts; and first and second conductors respectively disposed on the first and second bonding portions; including, wherein the first and second bonding portions are respectively disposed on the first and second openings, and the first and second conductors are respectively arranged up to the inside of the first and second openings, and the first and the second opening further includes a first area disposed on an upper surface of each of the first and second frames, and a second area disposed on a lower surface of each of the first and second frames, the upper surface of the first area A width may be provided to be smaller than a width of a lower surface of the second region.

A light emitting device package according to an embodiment includes first and second frames spaced apart from each other; a body disposed between the first and second frames; a light emitting device including a first bonding unit and a second bonding unit; and an adhesive disposed between the body and the light emitting device. Including, wherein the first frame has a first opening penetrating the upper and lower surfaces of the first frame, is disposed spaced apart from the first opening, and is concave from the upper surface of the first frame to the lower surface of the first frame. a first upper recess, wherein the second frame includes a second opening penetrating the upper and lower surfaces of the second frame, the second opening spaced apart from the second opening, and the second frame from the upper surface of the second frame a second upper recess concave in a lower surface direction of and a resin part disposed on the second opening part and disposed between the first upper recess and a side surface of the first bonding part and between the second upper recess and a side surface of the second bonding part. can do.

A light emitting device package according to an embodiment includes: a first conductive layer provided in the first opening and disposed in direct contact with a lower surface of the first bonding part; a second conductive layer provided in the second opening and disposed in direct contact with a lower surface of the second bonding part; may include

In an embodiment, the first conductive layer includes a first upper conductive layer provided in an upper region of the first opening and a first lower conductive layer provided in a lower region of the first opening, and the first upper conductive layer and the first lower conductive layer may include different materials.

According to an embodiment, the resin part may include white silicone.

A light emitting device package according to an embodiment includes: a first conductor disposed under the first bonding unit and electrically connected to the first bonding unit; a second conductor disposed under the second bonding unit and electrically connected to the second bonding unit; a first conductive layer provided in the first opening and disposed in direct contact with a lower surface and a side surface of the first conductor; a second conductive layer provided in the second opening and disposed in direct contact with a lower surface and a side surface of the second conductor; may include

According to an embodiment, the first conductive layer may be disposed in direct contact with the lower surface of the first bonding part, and the second conductive layer may be disposed in direct contact with the lower surface of the second bonding part.

In an embodiment, the first conductor may be disposed in the first opening, and the second conductor may be disposed in the second opening.

In example embodiments, the first opening may include an inclined surface in which the width of the upper region is smaller than the width of the lower region, and the width gradually narrows from the lower region to the upper region.

According to the semiconductor device package and the semiconductor device package manufacturing method according to the embodiment, there is an advantage in that light extraction efficiency, electrical characteristics, and reliability can be improved.

According to the semiconductor device package and the semiconductor device package manufacturing method according to the embodiment, there is an advantage in that process efficiency can be improved and a new package structure can be proposed, thereby reducing the manufacturing cost and improving the manufacturing yield.

The semiconductor device package according to the embodiment has an advantage in that it is possible to prevent discoloration of the reflector by providing a body having a high reflectance, thereby improving the reliability of the semiconductor device package.

According to the semiconductor device package and the semiconductor device manufacturing method according to the embodiment, it is possible to prevent a re-melting phenomenon from occurring in the bonding region of the semiconductor device package in the process of re-bonding the semiconductor device package to a substrate or the like. There is this.

1 is a plan view of a light emitting device package according to an embodiment of the present invention.
FIG. 2 is a bottom view of the light emitting device package shown in FIG. 1 .
3 is a cross-sectional view taken along line DD of the light emitting device package shown in FIG. 1 .
4 is a view for explaining an arrangement relationship of a first frame, a second frame, and a body applied to a light emitting device package according to an embodiment of the present invention.
5A and 5B are views for explaining a state in which a package body is provided by the method for manufacturing a light emitting device package according to an embodiment of the present invention.
6A and 6B are views for explaining a state in which a light emitting device is provided by the method for manufacturing a light emitting device package according to an embodiment of the present invention.
7A and 7B are views for explaining a state in which a conductive layer is provided in an opening by the method of manufacturing a light emitting device package according to an embodiment of the present invention.
8A and 8B are views for explaining a state in which a molding part is provided by the method for manufacturing a light emitting device package according to an embodiment of the present invention.
9 to 11 are views for explaining a modified example of the body applied to the light emitting device package shown in FIG. 3 .
12 to 14 are views for explaining another modified example of a body applied to the light emitting device package shown in FIG. 3 .
15 to 17 are views for explaining another modified example of a body applied to the light emitting device package shown in FIG. 3 .
18 is a view showing another example of a light emitting device package according to an embodiment of the present invention.
19 is a view showing another example of a light emitting device package according to an embodiment of the present invention.
20 is a view showing another example of a light emitting device package according to an embodiment of the present invention.
21 is a plan view illustrating an example of a light emitting device applied to a light emitting device package according to an embodiment of the present invention.
22 is a cross-sectional view taken along line AA of the light emitting device shown in FIG. 21 .
23A and 23B are views for explaining a step in which a semiconductor layer is formed by a method of manufacturing a light emitting device according to an embodiment of the present invention.
24A and 24B are views for explaining a step in which an ohmic contact layer is formed by the method of manufacturing a light emitting device according to an embodiment of the present invention.
25A and 25B are views for explaining a step in which a reflective layer is formed by a method of manufacturing a light emitting device according to an embodiment of the present invention.
26A and 26B are views for explaining a step in which the first sub-electrode and the second sub-electrode are formed by the method of manufacturing a light emitting device according to an embodiment of the present invention.
27A and 27B are views for explaining a step in which a protective layer is formed by the method of manufacturing a light emitting device according to an embodiment of the present invention.
28A and 28B are views for explaining a step in which a first electrode and a second electrode are formed by the method of manufacturing a light emitting device according to an embodiment of the present invention.
29 is a plan view illustrating an electrode arrangement of a light emitting device applied to a light emitting device package according to an embodiment of the present invention.
30 is a cross-sectional view taken along line FF of the light emitting device shown in FIG.
31 is a view showing another example of a light emitting device package according to an embodiment of the present invention.
32 is a view showing another example of a light emitting device package according to an embodiment of the present invention.
33 is a view showing another example of a light emitting device package according to an embodiment of the present invention.

Hereinafter, an embodiment will be described with reference to the accompanying drawings. In the description of embodiments, each layer (film), region, pattern or structure is “on/over” or “under” the substrate, each layer (film), region, pad or pattern. In the case of being described as being formed on, “on/over” and “under” include both “directly” or “indirectly” formed through another layer. do. In addition, the reference for the upper / upper or lower of each layer will be described with reference to the drawings, but the embodiment is not limited thereto.

Hereinafter, a semiconductor device package and a semiconductor device package manufacturing method according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. Hereinafter, a case in which a light emitting device is applied as an example of a semiconductor device will be described.

First, a light emitting device package according to an embodiment of the present invention will be described with reference to FIGS. 1 to 4 .

1 is a plan view of a light emitting device package according to an embodiment of the present invention, FIG. 2 is a bottom view of a light emitting device package according to an embodiment of the present invention, and FIG. 3 is a line DD of the light emitting device package shown in FIG. 4 is a view for explaining the arrangement relationship of the first frame, the second frame, and the body applied to the light emitting device package according to the embodiment of the present invention.

The light emitting device package 100 according to the embodiment may include a package body 110 and a light emitting device 120 as shown in FIGS. 1 to 4 .

The package body 110 may include a first frame 111 and a second frame 112 . The first frame 111 and the second frame 112 may be disposed to be spaced apart from each other.

The package body 110 may include a body 113 . The body 113 may be disposed between the first frame 111 and the second frame 112 . The body 113 may function as a kind of electrode separation line. The body 113 may be referred to as an insulating member.

The body 113 may be disposed on the first frame 111 . Also, the body 113 may be disposed on the second frame 112 .

The body 113 may provide an inclined surface disposed on the first frame 111 and the second frame 112 . A cavity C may be provided on the first frame 111 and the second frame 112 by the inclined surface of the body 113 .

According to an embodiment, the package body 110 may be provided in a structure having a cavity (C) or may be provided in a structure having a flat top surface without the cavity (C).

For example, the body 113 may include polyphthalamide (PPA: Polyphthalamide), PCT (Polychloro Triphenyl), LCP (Liquid Crystal Polymer), PA9T (Polyamide9T), silicone, epoxy molding compound (EMC), At least one selected from a group including a silicon molding compound (SMC), ceramic, photo sensitive glass (PSG), and sapphire (Al ₂ O ₃ ) may be formed. Also, the body 113 may include a high refractive filler such as TiO ₂ and SiO ₂ .

The first frame 111 and the second frame 112 may be provided as insulating frames. The first frame 111 and the second frame 112 may stably provide structural strength of the package body 110 .

In addition, the first frame 111 and the second frame 112 may be provided as conductive frames. The first frame 111 and the second frame 112 may stably provide structural strength of the package body 110 and may be electrically connected to the light emitting device 120 .

Differences between a case in which the first frame 111 and the second frame 112 are formed of an insulating frame and a case that the second frame 112 are formed of a conductive frame will be described later.

According to an embodiment, the light emitting device 120 may include a first bonding unit 121 , a second bonding unit 122 , a light emitting structure 123 , and a substrate 124 .

As shown in FIG. 3 , the light emitting device 120 may include the light emitting structure 123 disposed under the substrate 124 . The first bonding unit 121 and the second bonding unit 122 may be disposed between the light emitting structure 123 and the package body 110 .

The light emitting structure 123 may include a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer. The first bonding part 121 may be electrically connected to the first conductivity-type semiconductor layer. In addition, the second bonding part 122 may be electrically connected to the second conductivity type semiconductor layer.

The light emitting device 120 may be disposed on the package body 110 . The light emitting device 120 may be disposed on the first frame 111 and the second frame 112 . The light emitting device 120 may be disposed in the cavity C provided by the package body 110 .

The first bonding part 121 may be disposed on a lower surface of the light emitting device 120 . The second bonding part 122 may be disposed on the lower surface of the light emitting device 120 . The first bonding unit 121 and the second bonding unit 122 may be disposed to be spaced apart from each other on the lower surface of the light emitting device 120 .

The first bonding part 121 may be disposed on the first frame 111 . The second bonding part 122 may be disposed on the second frame 112 .

The first bonding part 121 may be disposed between the light emitting structure 123 and the first frame 111 . The second bonding part 122 may be disposed between the light emitting structure 123 and the second frame 112 .

The first bonding portion 121 and the second bonding portion 122 may include Ti, Al, In, Ir, Ta, Pd, Co, Cr, Mg, Zn, Ni, Si, Ge, Ag, Ag alloy, Au , Hf, Pt, Ru, Rh, ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, Ni/IrOx/Au/ITO using one or more materials or alloys selected from the group consisting of a single layer or It may be formed in multiple layers.

Meanwhile, the light emitting device package 100 according to the embodiment may include a first opening TH1 and a second opening TH2 as shown in FIGS. 1 to 4 . The first frame 111 may include the first opening TH1 . The second frame 112 may include the second opening TH2 .

The first opening TH1 may be provided in the first frame 111 . The first opening TH1 may be provided through the first frame 111 . The first opening TH1 may be provided through the upper and lower surfaces of the first frame 111 in the first direction.

The first opening TH1 may be disposed under the first bonding portion 121 of the light emitting device 120 . The first opening TH1 may be provided to overlap the first bonding portion 121 of the light emitting device 120 in a first direction from an upper surface to a lower surface of the first frame 111 .

The second opening TH2 may be provided in the second frame 112 . The second opening TH2 may be provided through the second frame 112 . The second opening TH2 may be provided through the upper and lower surfaces of the second frame 112 in the first direction.

The second opening TH2 may be disposed under the second bonding portion 122 of the light emitting device 120 . The second opening TH2 may be provided to overlap the second bonding portion 122 of the light emitting device 120 in a first direction from an upper surface to a lower surface of the second frame 112 .

The first opening TH1 and the second opening TH2 may be spaced apart from each other. The first opening TH1 and the second opening TH2 may be disposed to be spaced apart from each other under the lower surface of the light emitting device 120 .

According to an embodiment, the width W1 of the upper region of the first opening TH1 may be smaller than or equal to the width W1 of the first bonding portion 121 . In addition, the width of the upper region of the second opening TH2 may be smaller than or equal to the width of the second bonding portion 122 .

Accordingly, the first bonding portion 121 of the light emitting device 120 and the first frame 111 may be more firmly attached. In addition, the second bonding portion 122 and the second frame 112 of the light emitting device 120 may be more firmly attached.

Also, the width W1 of the upper region of the first opening TH1 may be smaller than or equal to the width W2 of the lower region of the first opening TH1. Also, the width of the upper region of the second opening TH2 may be smaller than or equal to the width of the lower region of the second opening TH2 .

For example, the width W1 of the upper region of the first opening TH1 may be several tens of micrometers to several hundred micrometers. Also, the width W2 of the lower region of the first opening TH1 may be tens of micrometers to several hundreds of micrometers greater than the width W1 of the upper region of the first opening TH1.

In addition, the width of the upper region of the second opening TH2 may be several tens of micrometers to several hundred micrometers. Also, the width of the lower region of the second opening TH2 may be tens of micrometers to several hundreds of micrometers greater than the width of the upper region of the second opening TH2.

Also, the width W2 of the lower region of the first opening TH1 may be wider than the width W1 of the upper region of the first opening TH1 . The first opening TH1 may be provided with a constant width by a predetermined depth in the upper region, and may be provided in an inclined shape toward the lower region.

In addition, the width of the lower region of the second opening TH2 may be wider than the width of the upper region of the second opening TH2 . The second opening TH2 may be provided with a constant width by a predetermined depth in the upper area, and may be provided in an inclined shape toward the lower area.

For example, the first opening TH1 may be provided in an inclined shape in which the width gradually decreases from the lower region to the upper region. Also, the second opening TH2 may be provided in an inclined shape in which the width gradually decreases from the lower region to the upper region.

Also, according to an embodiment, as shown in FIG. 33 , both of the lower regions of the first and second openings TH1 and TH2 may include inclined surfaces.

However, the present invention is not limited thereto, and the inclined surfaces between the upper and lower regions of the first and second openings TH1 and TH2 may have a plurality of inclined surfaces having different inclinations, and the inclined surfaces may be disposed with curvature. .

Effects of changes in the width W1 of the upper region and the width W2 of the lower region of the first and second openings TH1 and TH2 will be described later.

A width W3 between the first opening TH1 and the second opening TH2 in the lower surfaces of the first frame 111 and the second frame 112 may be several hundreds of micrometers. A width W3 between the first opening TH1 and the second opening TH2 in the lower surface area of the first frame 111 and the second frame 112 is, for example, 100 micrometers to 150 micrometers. can be provided as

The width W3 between the first opening TH1 and the second opening TH2 in the lower surface of the first frame 111 and the second frame 112 is the light emitting device package ( When 100) is later mounted on a circuit board, a sub-mount, etc., it may be selected to be provided over a certain distance in order to prevent an electrical short between the pads from occurring.

The light emitting device package 100 according to the embodiment may include an adhesive 130 .

The adhesive 130 may be disposed between the package body 110 and the light emitting device 120 . The adhesive 130 may be disposed between the upper surface of the package body 110 and the lower surface of the light emitting device 120 . The adhesive 130 may be disposed between the upper surface of the body 113 and the lower surface of the light emitting device 120 .

In addition, the light emitting device package 100 according to the embodiment may include a recess R as shown in FIGS. 1 to 4 .

The recess R may be provided in the body 113 . The recess R may be provided between the first opening TH1 and the second opening TH2. The recess (R) may be provided to be concave in the direction from the upper surface to the lower surface of the body (113). The recess R may be disposed under the light emitting device 120 . The recess R may be provided to overlap the light emitting device 120 in the first direction.

According to this embodiment, the adhesive 130 may be disposed in the recess (R). The adhesive 130 may be disposed between the light emitting device 120 and the body 113 . The adhesive 130 may be disposed between the first bonding unit 121 and the second bonding unit 122 . For example, the adhesive 130 may be disposed in contact with a side surface of the first bonding unit 121 and a side surface of the second bonding unit 122 .

In addition, the adhesive 130 may be provided between the light emitting device 120 and the package body 110 . The adhesive 130 may be disposed between the light emitting device 120 and the first frame 111 . The adhesive 130 may be disposed between the light emitting device 120 and the second frame 112 .

The adhesive 130 may provide a stable fixing force between the light emitting device 120 and the package body 110 . The adhesive 130 may provide a stable fixing force between the light emitting device 120 and the body 113 . The adhesive 130 may be disposed in direct contact with the upper surface of the body 113 , for example. In addition, the adhesive 130 may be disposed in direct contact with the lower surface of the light emitting device 120 .

For example, the adhesive 130 may include at least one of an epoxy-based material, a silicone-based material, and a hybrid material including an epoxy-based material and a silicone-based material. . Also, as an example, when the adhesive 130 includes a reflective function, the adhesive may include white silicone.

The adhesive 130 may provide a stable fixing force between the body 113 and the light emitting device 120 , and when light is emitted to a lower surface of the light emitting device 120 , the light emitting device 120 and the light emitting device 120 . A light diffusion function may be provided between the body 113 . When light is emitted from the light emitting device 120 to the lower surface of the light emitting device 120 , the adhesive 130 provides a light diffusion function, thereby improving the light extraction efficiency of the light emitting device package 100 .

In addition, the adhesive 130 may reflect light emitted from the light emitting device 120 . When the adhesive 130 includes a reflective function, the adhesive 130 may be made of a material including TiO ₂ , Silicone, etc., and the adhesive 130 may be made of white silicone. have.

In some embodiments, a depth T1 of the recess R may be smaller than a depth T2 of the first opening TH1 or a depth T2 of the second opening TH2.

The depth T1 of the recess R may be determined in consideration of the adhesive force of the adhesive 130 . In addition, the recess R has a depth T1 in consideration of the stable strength of the body 113 and/or cracks in the light emitting device package 100 by heat emitted from the light emitting device 120 . ) can be determined not to occur.

The recess R may provide an appropriate space under the light emitting device 120 in which a kind of underfill process may be performed. Here, the under fill process may be a process of mounting the light emitting device 120 on the package body 110 and then disposing the adhesive 130 under the light emitting device 120 , and the light emitting device ( 120) may be a process of disposing the light emitting device 120 after disposing the adhesive 130 in the recess R in order to be mounted through the adhesive 130 in the process of mounting the package body 110 have. The recess R may be provided at a first depth or more so that the adhesive 130 may be sufficiently provided between the lower surface of the light emitting device 120 and the upper surface of the body 113 . In addition, the recess (R) may be provided to a second depth or less in order to provide a stable strength of the body (113).

The depth T1 and the width W4 of the recess R may affect the formation position and fixing force of the adhesive 130 . A depth T1 and a width W4 of the recess R may be determined to provide sufficient fixing force by the adhesive 130 disposed between the body 113 and the light emitting device 120 . .

For example, the depth T1 of the recess R may be several tens of micrometers. The depth T1 of the recess R may be 40 micrometers to 60 micrometers.

In addition, the width W4 of the recess R may be provided in a range of several tens of micrometers to several hundreds of micrometers. Here, the width W4 of the recess R may be provided in the longitudinal direction of the light emitting device 120 in order to secure a fixing force between the light emitting device 120 and the package body 110 .

A width W4 of the recess R may be provided to be narrower than a gap between the first bonding portion 121 and the second bonding portion 122 . The width W4 of the recess R may be 5% or more to 80% or less with respect to the long axis length of the light emitting device 120 . When the width W4 of the recess R is provided to be 5% or more of the long axis length of the light emitting device 120, it is possible to secure a stable fixing force between the light emitting device 120 and the package body 110, , 80% or less to be disposed on each of the first and second frames 111 and 112 between the recess R and the first and second openings TH1 and TH2 when the adhesive 130 is provided can Accordingly, a fixing force between the first and second frames 111 and 112 between the recess R and the first and second openings TH1 and TH2 and the light emitting device 120 may be secured.

A depth T2 of the first opening TH1 may be provided to correspond to a thickness of the first frame 111 . A depth T2 of the first opening TH1 may be provided to have a thickness capable of maintaining a stable strength of the first frame 111 .

A depth T2 of the second opening TH2 may be provided to correspond to a thickness of the second frame 112 . A depth T2 of the second opening TH2 may be provided to a thickness capable of maintaining a stable strength of the second frame 112 .

A depth T2 of the first opening TH1 and a depth T2 of the second opening TH2 may be provided to correspond to the thickness of the body 113 . A depth T2 of the first opening TH1 and a depth T2 of the second opening TH2 may be provided to have a thickness capable of maintaining a stable strength of the body 113 .

For example, the depth T2 of the first opening TH1 may be several hundreds of micrometers. A depth T2 of the first opening TH1 may be 180 micrometers to 500 micrometers. For example, the depth T2 of the first opening TH1 may be 500 micrometers.

For example, the thickness of (T2-T1) may be selected to be at least 100 micrometers or more. This is in consideration of the thickness of the injection process that can provide crack free (crack free) of the body (113).

According to an embodiment, the ratio (T2/T1) of the thickness T1 to the thickness T2 may be 2 to 10. For example, when the thickness of T2 is provided as 200 micrometers, the thickness of T1 may be provided as 20 micrometers to 100 micrometers. When the ratio (T2/T1) of the T1 thickness to the T2 thickness is 2 or more, mechanical strength can be secured so that cracks do not occur or break in the body 113 . In addition, when the ratio (T2/T1) of the T1 thickness to the T2 thickness is 10 or less, the amount of the adhesive 130 disposed in the recess R can be sufficiently disposed, and thus the light emitting device 120 and The fixing force between the light emitting device packages 110 may be improved.

In addition, the light emitting device package 100 according to the embodiment may include a molding unit 140 as shown in FIG. 3 .

For reference, in FIG. 1 , the molding part 140 is not shown so that the arrangement relationship of the first frame 111 , the second frame 112 , and the body 113 can be clearly seen. did

The molding part 140 may be provided on the light emitting device 120 . The molding unit 140 may be disposed on the first frame 111 and the second frame 112 . The molding part 140 may be disposed in the cavity C provided by the package body 110 .

The molding part 140 may include an insulating material. In addition, the molding unit 140 may include a wavelength conversion unit that receives the light emitted from the light emitting device 120 and provides wavelength-converted light. For example, the molding unit 140 may be formed of at least one selected from a group including a phosphor, a quantum dot, and the like.

In addition, the light emitting device package 100 according to the embodiment may include a first conductive layer 321 and a second conductive layer 322 as shown in FIGS. 1 to 4 . The first conductive layer 321 may be disposed to be spaced apart from the second conductive layer 322 .

The first conductive layer 321 may be provided in the first opening TH1 . The first conductive layer 321 may be disposed under the first bonding part 121 . The first conductive layer 321 may have a width in a second direction perpendicular to the first direction. A width of the first conductive layer 321 may be smaller than a width of the first bonding portion 121 . The width of the upper region of the first conductive layer 321 may be smaller than the width of the first bonding portion 121 .

The first bonding part 121 may have a width in a second direction perpendicular to the first direction in which the first opening TH1 is formed. A width of the first bonding portion 121 may be greater than a width of an upper region of the first opening TH1 in the second direction.

The first conductive layer 321 may be disposed in direct contact with the lower surface of the first bonding part 121 . The first conductive layer 321 may be electrically connected to the first bonding part 121 . The first conductive layer 321 may be disposed to be surrounded by the first frame 111 .

The second conductive layer 322 may be provided in the second opening TH2 . The second conductive layer 322 may be disposed under the second bonding part 122 . A width of the second conductive layer 322 may be smaller than a width of the second bonding portion 122 . The width of the upper region of the second conductive layer 322 may be smaller than the width of the second bonding portion 122 .

The second bonding part 122 may have a width in a second direction perpendicular to the first direction in which the second opening TH2 is formed. A width of the second bonding portion 122 may be greater than a width of an upper region of the second opening TH2 in the second direction.

The second conductive layer 322 may be disposed in direct contact with the lower surface of the second bonding part 122 . The second conductive layer 322 may be electrically connected to the second bonding part 122 . The second conductive layer 322 may be disposed to be surrounded by the second frame 112 .

The first conductive layer 321 and the second conductive layer 322 may include one material selected from the group consisting of Ag, Au, Pt, or the like or an alloy thereof. However, the present invention is not limited thereto, and a material capable of securing a conductive function may be used as the first conductive layer 321 and the second conductive layer 322 .

For example, the first conductive layer 321 and the second conductive layer 322 may be formed using a conductive paste. The conductive paste may include solder paste, silver paste, or the like, and may be configured as a multi-layer made of different materials or a multi-layer or a single layer made of an alloy.

According to an embodiment, as shown in FIG. 3 , the first and second conductive layers 321 and 322 may be provided in the first and second openings TH1 and TH2, respectively.

As described above, the first and second openings TH1 and TH2 may have a first area and a second area, and the width W1 of the upper surface of the first area is equal to the width W1 of the lower surface of the second area. It may be provided to be smaller than the width W2 of . Accordingly, the volumes of the first and second conductive layers 321 and 322 provided in the first and second openings TH1 and TH2 are also the second regions of the first and second openings TH1 and TH2. It may be provided in a smaller size than in the first area.

For example, the first regions of the first and second openings TH1 and TH2 may correspond to upper regions of the first and second openings TH1 and TH2. Also, the second regions of the first and second openings TH1 and TH2 may correspond to lower regions of the first and second openings TH1 and TH2.

As described above, as the widths of the upper regions of the first and second openings TH1 and TH2 are narrowed, the first and second bonding portions 121 and 122 and the first and second conductive layers 321 are provided. , 322) can be made smaller. Accordingly, it is possible to prevent the first and second conductive layers 321 and 322 from diffusing from the lower surfaces of the first and second bonding portions 121 and 122 in the lateral direction of the light emitting device 120 . .

When the first and second conductive layers 321 and 322 are diffused in the lateral direction from the lower surfaces of the first and second bonding portions 121 and 122, the diffused first and second conductive layers 321, 321, 322 ) may come in contact with the active layer of the light emitting device 120 , thereby causing a defect due to a short circuit.

However, according to the embodiment, by reducing the contact area between the first and second bonding portions 121 and 122 and the first and second conductive layers 321 and 322, the first and second conductive layers ( Diffusion of 321 and 322 in the lateral direction of the light emitting device 120 from the lower surfaces of the first and second bonding portions 121 and 122 can be prevented, and defects caused by the short circuit of the light emitting device 120 . This is prevented, so that the reliability of the light emitting device package can be improved.

Further, according to an embodiment, since the width of the lower surface of the second region of the first and second openings TH1 and TH2 is wider than the width of the upper surface of the first region, the width of the second region is provided through the lower surface of the second region. The process of disposing the first and second conductive layers 321 and 322 in the first and second openings TH1 and TH2 may be easily performed.

In addition, according to an embodiment, as the widths of the upper regions of the first and second openings TH1 and TH2 are narrow, the first and second openings provided in the upper regions of the first and second openings TH1 and TH2 are narrow. The volume of the first and second conductive layers 321 and 322 can be reduced.

Accordingly, since the amount of use of the first and second conductive layers 321 and 322 can be reduced, the manufacturing cost can be reduced while the electrical connection is stably performed.

In addition, the light emitting device package according to the embodiment may include a first upper recess R3 and a second upper recess R4 as shown in FIGS. 1, 3 and 4 .

The first upper recess R3 may be provided on an upper surface of the first frame 111 . The first upper recess R3 may be provided to be concave in a direction from an upper surface to a lower surface of the first frame 111 . The first upper recess R3 may be disposed to be spaced apart from the first opening TH1 in an outer direction of the package body 110 .

Also, according to an embodiment, a side surface of the first upper recess R3 may have an inclined surface or a curvature. Also, the first upper recess R3 may have a spherical shape, and a side surface thereof may have a circular shape. The following effects will be described later.

The first upper recess (R3), as shown in FIG. 4, when viewed from the upper direction, the outer surface of the package body 110 and the inner surface of the package body, and the outer surface and the inner surface It may include an extension side arranged parallel to the direction in which the recess (R) extends. The inner surface may be provided adjacent to three sides of the first bonding part 121 . In addition, the outer surface of the first upper recess R3 may be provided in two sides facing each other in the short axis direction of the package body 110 and the outer region in the long axis direction. For example, the first upper recess R3 may have three outer surfaces, three inner surfaces, and two extension sides, and may be provided in a “[” shape around the first bonding part 121 . can When the first frame 111 has the first opening TH1, it must be configured to have a separation distance from the first opening TH1. 111) can be secured. Accordingly, the configuration of the first upper recess R3 may include the configuration described above so as to surround a partial region of the first bonding part 121 . Here, when the first upper recess R3 is disposed to surround a partial area of the first bonding part 121 , an effect obtained will be described later.

The second upper recess R4 may be provided on the upper surface of the second frame 112 . The second upper recess R4 may be provided to be concave in a direction from an upper surface to a lower surface of the second frame 112 . The second upper recess R4 may be disposed to be spaced apart from the second opening TH2 in an outer direction of the package body 110 .

Also, according to an embodiment, a side surface of the second upper recess R4 may have an inclined surface or a curvature. Also, the second upper recess R4 may have a spherical shape, and a side surface thereof may have a circular shape. The following effects will be described later.

The second upper recess (R4), as shown in FIG. 4, when viewed from the upper direction, the outer surface of the package body 110 and the inner surface of the package body, and the outer surface and the inner surface It may include an extension side arranged parallel to the direction in which the recess (R) extends. The inner surface may be provided adjacent to three sides of the second bonding part 122 . In addition, the outer surface of the second upper recess R4 may be provided adjacent to two sides facing each other in the short axis direction of the package body 110 and the outer region in the long axis direction. For example, the second upper recess R4 may have three outer surfaces, three inner surfaces, and two extension sides, and may be provided in a “]” shape around the second bonding part 122 . can A second frame ( 112) can be secured. Accordingly, the configuration of the second upper recess R4 may include the configuration described above to surround a partial region of the second bonding part 122 . Here, when the second upper recess R4 is disposed to surround a partial area of the second bonding part 122 , an effect obtained will be described later.

For example, the first upper recess R3 and the second upper recess R4 may be provided with a width of several tens of micrometers to several hundred micrometers, and the light emitting device 120 and/or the light emitting device may have a width of several tens of micrometers to several hundred micrometers. It may be provided in various ways according to the size of the package 100 .

In addition, the light emitting device package 100 according to the embodiment may include a resin part 135 as shown in FIGS. 1, 3 and 4 .

The resin part 135 may be disposed between the first frame 111 and the light emitting device 120 . The resin part 135 may be disposed between the second frame 112 and the light emitting device 120 . The resin part 135 may be provided on the bottom surface of the cavity C provided in the package body 110 .

The resin part 135 may be provided in the first upper recess R3 and the second upper recess R4 .

The resin part 135 may be disposed on a side surface of the first bonding part 121 . The resin part 135 may be provided in the first upper recess R3 , and may extend to an area where the first bonding part 121 is disposed. The resin part 135 may be disposed below the light emitting structure 123 between the outer side of the first bonding part 121 of the light emitting structure 123 and the outer surface of the light emitting device 120 .

Also, the resin part 135 may be disposed on a side surface of the second bonding part 122 . The resin part 135 may be provided in the second upper recess R4 , and may extend to an area where the second bonding part 122 is disposed. The resin part 135 may be disposed below the light emitting structure 123 between the outer side of the first bonding unit 121 and the outer surface of the light emitting device 120 .

In addition, in the light emitting device package according to the embodiment, as shown in FIG. 4 , when viewed from an upper direction, a partial region of the first upper recess R3 is a partial region of the light emitting device 120 and a first direction may be provided in an overlapping manner. For example, an inner surface of the first upper recess R3 adjacent to the first bonding part 121 may be disposed inside the light emitting structure 123 .

In addition, in the light emitting device package according to the embodiment, as shown in FIG. 4 , when viewed from an upper direction, a partial region of the second upper recess R4 overlaps the light emitting structure 123 in a vertical direction. can be provided. For example, a side area of the second upper recess R4 adjacent to the second bonding part 122 may extend under the light emitting structure 123 .

In addition, the first upper recess R3 and the second upper recess R4 may provide sufficient space for the resin part 135 to be provided under the light emitting device 120 . The first upper recess R3 and the second upper recess R4 may provide an appropriate space in which a kind of underfill process may be performed under the light emitting device 120 .

Accordingly, the resin part 135 filled in the first upper recess R3 and the second upper recess R4 moves around the first bonding part 121 and the second bonding part 122 . can be effectively sealed.

In addition, after fixing the light emitting device 120 and the package body 110 through the adhesive 130 disposed in the recess of the body 113, the resin part 135 is attached to the first and second upper parts. It may be disposed in the recesses R3 and R4 to seal the periphery of the first and second bonding portions 121 and 122 . As described above, when the first and second recesses R3 and R4 are disposed to surround some areas of the first and second bonding parts 121 and 122 and the process is performed in the order of manufacture, the subsequent process is A short circuit problem that may occur when the first and second conductive layers 321 and 322 extend to the side surface of the light emitting device 120 and come into contact with the active layer may be more effectively improved.

For example, the resin part 135 may include at least one of an epoxy-based material, a silicone-based material, and a hybrid material including an epoxy-based material and a silicone-based material. have. In addition, the resin part 135 may be a reflective part that reflects the light emitted from the light emitting device 120 , for example, may be a resin including a reflective material such as TiO ₂ , or may be made of white silicone. may include

The resin part 135 may be disposed under the light emitting device 120 to perform a sealing function. In addition, the resin part 135 may improve adhesion between the light emitting device 120 and the first frame 111 . The resin part 135 may improve adhesion between the light emitting device 120 and the second frame 112 .

In addition, as described above, when the first frame 111 has a spherical shape and its side cross-section is configured in a circular shape, the area in which the resin part directly and/or indirectly contacts the first frame increases. Therefore, the adhesive force between the light emitting device 120 and the first frame 111 can be further improved. Here, direct contact may mean that the first frame 111 and the resin part 135 are in direct contact, and indirect contact may mean that the first frame 111 constitutes the first frame 111 . It may refer to an embodiment in which a material is coated with a material different from that of the one in question, and may refer to an embodiment in which a different material is disposed between the resin part 135 and the first frame 111 .

When the adhesive force between the first frame 111 and the resin part 135 is insufficient, another material may be disposed between the first frame 111 and the resin part 135 , and the resin part 135 . ) and a material having good adhesion to the first frame 111 may be used to coat the first frame 111 .

When the first and second conductive layers 321 and 322 diffuse and move toward the outer surface of the light emitting device 120 , the first and second conductive layers 321 and 322 are formed between the active layer of the light emitting device 120 and It may come into contact with it and cause a defect due to a short circuit. Accordingly, according to the manufacturing process of disposing the first and second conductive layers 321 and 322 after the resin part 135 is disposed, a short circuit between the first and second conductive layers 321 and 322 and the active layer is prevented. This can improve the reliability of the light emitting device package according to the embodiment.

In addition, when the resin part 135 is made of white silicon to reflect the light emitted from the light emitting device 120 or includes a material having a reflective characteristic such as TiO 2 , the resin part 135 is the The light extraction efficiency of the light emitting device package 100 may be improved by reflecting the light provided from the light emitting device 120 in an upper direction of the package body 110 . In addition, when the resin part 135 is disposed to fill the first and second upper recesses R3 and R4, as described above, the first and second upper recesses R3 and R4 are formed in the first and second upper recesses R3 and R4. Since the light emitting device 120 is disposed to surround a portion of the region, reflectivity may be increased in the region where the first and second upper recesses R3 and R4 are disposed. Accordingly, the light extraction efficiency of the light emitting device package 100 may be improved.

Also, according to an embodiment, the molding part 140 may be disposed on the resin part 135 .

On the other hand, according to another example of the light emitting device package according to the embodiment of the present invention, the resin part 135 is not provided separately, and the molding part 140 is formed between the first frame 111 and the second frame ( 112) may be arranged to be in direct contact.

Also, according to an embodiment, the light emitting structure 123 may be provided as a compound semiconductor. The light emitting structure 123 may be formed of, for example, a group 2-6 or group 3-5 compound semiconductor. For example, the light emitting structure 123 may include at least two or more elements selected from aluminum (Al), gallium (Ga), indium (In), phosphorus (P), arsenic (As), and nitrogen (N). can be

The light emitting structure 123 may include a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer.

The first and second conductivity-type semiconductor layers may be implemented with at least one of a group 3-5 or group 2-6 compound semiconductor. The first and second conductivity type semiconductor layers are formed of, for example, a semiconductor material having a composition formula of In _x Al _y Ga _{1 -xy} N (0≤x≤1, 0≤y≤1, 0≤x+y≤1). can be For example, the first and second conductivity-type semiconductor layers may include at least one selected from the group consisting of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, and the like. . The first conductivity-type semiconductor layer may be an n-type semiconductor layer doped with an n-type dopant such as Si, Ge, Sn, Se, or Te. The second conductivity-type semiconductor layer may be a p-type semiconductor layer doped with a p-type dopant such as Mg, Zn, Ca, Sr, or Ba.

The active layer may be implemented with a compound semiconductor. The active layer may be embodied as, for example, at least one of a group 3-5 or group 2-6 compound semiconductor. When the active layer is implemented as a multi-well structure, the active layer may include a plurality of well layers and a plurality of barrier layers that are alternately disposed, and In _x Al _y Ga _{1 -x- y} N (0≤x≤1 , 0≤y≤1, 0≤x+y≤1). For example, the active layer may be selected from the group consisting of InGaN/GaN, GaN/AlGaN, AlGaN/AlGaN, InGaN/AlGaN, InGaN/InGaN, AlGaAs/GaAs, InGaAs/GaAs, InGaP/GaP, AlInGaP/InGaP, InP/GaAs. It may include at least one.

In the light emitting device package 100 according to the embodiment, power is connected to the first bonding unit 121 through the first opening TH1 area, and the second bonding unit through the second opening TH2 area. Power may be connected to 122 .

Accordingly, the light emitting device 120 can be driven by the driving power supplied through the first bonding unit 121 and the second bonding unit 122 . In addition, the light emitted from the light emitting device 120 can be provided in an upper direction of the package body 110 .

On the other hand, the light emitting device package 100 according to the embodiment described above may be supplied by being mounted on a sub-mount or a circuit board.

However, when a conventional light emitting device package is mounted on a sub-mount or a circuit board, a high-temperature process such as reflow may be applied. In this case, in the reflow process, a re-melting phenomenon occurs in the bonding region between the light emitting device and the lead frame provided in the light emitting device package, so that the stability of electrical connection and physical bonding may be weakened.

However, according to the light emitting device package and the light emitting device package manufacturing method according to the embodiment, the first electrode and the second electrode of the light emitting device according to the embodiment may receive driving power through the conductive layer disposed in the opening. In addition, the melting point of the conductive layer disposed in the opening may be selected to have a higher value than that of a general bonding material.

Therefore, even when the light emitting device package 100 according to the embodiment is bonded to the main board or the like through a reflow process, a re-melting phenomenon does not occur, so electrical connection and physical bonding force are not deteriorated. There is no advantage.

In addition, according to the light emitting device package 100 and the light emitting device package manufacturing method according to the embodiment, there is no need to expose the package body 110 to high temperature in the process of manufacturing the light emitting device package. Therefore, according to the embodiment, it is possible to prevent the package body 110 from being damaged or discolored by exposure to high temperature.

Accordingly, the selection range for materials constituting the body 113 can be widened. According to an embodiment, the body 113 may be provided using not only an expensive material such as ceramic, but also a relatively inexpensive resin material.

For example, the body 113 includes at least one material selected from the group consisting of PPA (PolyPhtalAmide) resin, PCT (PolyCyclohexylenedimethylene Terephthalate) resin, EMC (Epoxy Molding Compound) resin, and SMC (Silicone Molding Compound) resin. can do.

Then, a method of manufacturing a light emitting device package according to an embodiment of the present invention will be described with reference to the accompanying drawings.

In describing a method of manufacturing a light emitting device package according to an embodiment of the present invention with reference to the accompanying drawings, descriptions of matters overlapping with those described with reference to FIGS. 1 to 4 may be omitted.

First, according to the method for manufacturing a light emitting device package according to an embodiment of the present invention, as shown in FIGS. 5A and 5B , a package body 110 may be provided.

5A and 5B are a plan view and a cross-sectional view illustrating a state in which a package body is provided by a method for manufacturing a light emitting device package according to an embodiment of the present invention.

5A and 5B , the package body 110 may include a first frame 111 and a second frame 112 . The first frame 111 and the second frame 112 may be disposed to be spaced apart from each other.

The package body 110 may include a body 113 . The body 113 may be disposed between the first frame 111 and the second frame 112 .

The body 113 may be disposed on the first frame 111 . Also, the body 113 may be disposed on the second frame 112 .

The body 113 may provide an inclined surface disposed on the first frame 111 and the second frame 112 . A cavity C may be provided on the first frame 111 and the second frame 112 by the inclined surface of the body 113 .

Also, the first frame 111 may include a first opening TH1 . The second frame 112 may include a second opening TH2.

The first opening TH1 may be provided in the first frame 111 . The first opening TH1 may be provided through the first frame 111 . The first opening TH1 may be provided through the upper and lower surfaces of the first frame 111 in the first direction.

The second opening TH2 may be provided in the second frame 112 . The second opening TH2 may be provided through the second frame 112 . The second opening TH2 may be provided through the upper and lower surfaces of the second frame 112 in the first direction.

The package body 110 may include a recess R provided in the body 113 .

The recess R may be provided in the body 113 . The recess R may be provided between the first opening TH1 and the second opening TH2. The recess (R) may be provided to be concave in the direction from the upper surface to the lower surface of the body (113).

According to an embodiment, the length L2 of the recess R may be greater than the length L1 of the first opening TH1 or the length L1 of the second opening TH2. .

Next, according to the method of manufacturing a light emitting device package according to the embodiment, an adhesive 130 may be provided in the recess R as shown in FIGS. 5A and 5B .

The adhesive 130 may be provided to the recess (R) region through a dotting method or the like. For example, the adhesive 130 may be provided in a predetermined amount in the region where the recess R is formed, and may be provided to overflow the recess R.

Also, according to an embodiment, as shown in FIG. 5A , the length L2 of the recess R may be greater than the length L1 of the second opening TH2. The length L1 of the second opening TH2 may be smaller than the length of the light emitting device 120 in the short axis direction. In addition, the length L2 of the recess R may be greater than the length in the short axis direction of the light emitting device 120 .

In the light emitting device package manufacturing process according to the embodiment, when the amount of the adhesive 130 provided under the light emitting device 120 is large, the adhesive 130 provided in the recess R is applied to the light emitting device ( The portion that overflows while being glued to the lower portion of the 120 ) can be moved in the direction of the length L2 of the recess R. Accordingly, even when the amount of the adhesive 130 is applied larger than the design, the light emitting device 120 can be stably fixed without being lifted from the body 113 .

Also, the light emitting device package according to the embodiment may include a first upper recess R3 and a second upper recess R4 as shown in FIGS. 5A and 5B .

The first upper recess R3 may be provided on an upper surface of the first frame 111 . The first upper recess R3 may be provided to be concave in a direction from an upper surface to a lower surface of the first frame 111 . The first upper recess R3 may be disposed to be spaced apart from the first opening TH1 in an outer direction of the package body 110 .

Also, according to an embodiment, a side surface of the first upper recess R3 may have an inclined surface or a curvature. Also, the first upper recess R3 may have a spherical shape, and a side surface thereof may have a circular shape.

The first upper recess R3 connects the outer surface of the package body 110 to the inner surface of the package body, and the outer surface and the inner surface when viewed from the upper direction, and the recess R It may include an extension side disposed parallel to the extending direction. The inner surface may be provided adjacent to three sides of the first opening TH1. In addition, the outer surface of the first upper recess R3 may be provided in two sides facing each other in the short axis direction of the package body 110 and the outer region in the long axis direction. For example, the first upper recess R3 may be provided in a “[” shape around the first opening TH1 . When the first frame 111 has the first opening TH1, it must be configured to have a separation distance from the first opening TH1. 111) can be secured. Accordingly, the configuration of the first upper recess R3 may include the configuration described above to surround a partial region of the first opening TH1 .

The second upper recess R4 may be provided on the upper surface of the second frame 112 . The second upper recess R4 may be provided to be concave in a direction from an upper surface to a lower surface of the second frame 112 . The second upper recess R4 may be disposed to be spaced apart from the second opening TH2 in an outer direction of the package body 110 .

Also, according to an embodiment, a side surface of the second upper recess R4 may have an inclined surface or a curvature. Also, the second upper recess R4 may have a spherical shape, and a side surface thereof may have a circular shape. The following effects will be described later.

The second upper recess R4 connects the outer surface of the package body 110 to the inner surface of the package body, and the outer surface and the inner surface when viewed from the upper direction, and the recess (R) It may include an extension side disposed parallel to the extending direction. The inner surface may be provided adjacent to three sides of the second opening TH2. In addition, the outer surface of the second upper recess R4 may be provided adjacent to two sides facing each other in the short axis direction of the package body 110 and the outer region in the long axis direction. For example, the second upper recess R4 may have three outer surfaces, three inner surfaces, and two extension sides, and may be provided in a “]” shape around the second opening TH2. have. A second frame ( 112) can be secured. Accordingly, the configuration of the second upper recess R4 may include the configuration described above to surround a partial region of the second opening TH2 .

And, according to the light emitting device package manufacturing method according to the embodiment, the light emitting device 120 may be provided on the package body 110 as shown in FIGS. 6A and 6B .

6A and 6B are a plan view and a cross-sectional view illustrating a state in which a light emitting device is provided by a method for manufacturing a light emitting device package according to an embodiment of the present invention.

According to an embodiment, the recess R may be utilized to serve as a kind of align key while the light emitting device 120 is disposed on the package body 110 .

The light emitting device 120 may be fixed to the body 113 by the adhesive 130 . A portion of the adhesive 130 provided in the recess R may be moved toward the first bonding portion 121 and the second bonding portion 122 of the light emitting device 120 to be cured.

Accordingly, the adhesive 130 may be provided in a wide area between the lower surface of the light emitting element 120 and the upper surface of the body 113 , and the fixing force between the light emitting element 120 and the body 113 is increased. can be improved

According to an embodiment, as described with reference to FIG. 3 , the first opening TH1 may be disposed under the first bonding portion 121 of the light emitting device 120 . The first opening TH1 may be provided to overlap the first bonding portion 121 of the light emitting device 120 . The first opening TH1 may be provided to overlap the first bonding portion 121 of the light emitting device 120 in a first direction from an upper surface to a lower surface of the first frame 111 .

The second opening TH2 may be disposed under the second bonding portion 122 of the light emitting device 120 . The second opening TH2 may be provided to overlap the second bonding portion 122 of the light emitting device 120 . The second opening TH2 may be provided to overlap the second bonding portion 122 of the light emitting device 120 in a first direction from an upper surface to a lower surface of the second frame 112 .

And, according to the light emitting device package manufacturing method according to the embodiment, as shown in FIGS. 6A and 6B , the resin part 135 may be formed.

The resin part 135 may be disposed between the first frame 111 and the light emitting device 120 . The resin part 135 may be disposed between the second frame 112 and the light emitting device 120 . The resin part 135 may be provided on the bottom surface of the cavity C provided in the package body 110 .

The resin part 135 may be provided in the first upper recess R3 and the second upper recess R4 .

The resin part 135 may be disposed on a side surface of the first bonding part 121 . The resin part 135 may be provided in the first upper recess R3 , and may extend to an area where the first bonding part 121 is disposed. The resin part 135 may be disposed under the light emitting structure 123 .

Also, the resin part 135 may be disposed on a side surface of the second bonding part 122 . The resin part 135 may be provided in the second upper recess R4 , and may extend to an area where the second bonding part 122 is disposed. The resin part 135 may be disposed under the light emitting structure 123 .

The first upper recess R3 and the second upper recess R4 may provide a sufficient space for the resin part 135 to be provided.

Accordingly, the resin part 135 filled in the first upper recess R3 and the second upper recess R4 moves around the first bonding part 121 and the second bonding part 122 . can be effectively sealed.

For example, the resin part 135 may include at least one of an epoxy-based material, a silicone-based material, and a hybrid material including an epoxy-based material and a silicone-based material. have. For example, the resin part 135 may be a reflective part that reflects light emitted from the light emitting device 120 , for example TiO ₂ It may be a resin including a reflective material such as The resin part 135 may include white silicone.

The resin part 135 may be disposed under the light emitting device 120 to perform a sealing function. In addition, the resin part 135 may improve adhesion between the light emitting device 120 and the first frame 111 . The resin part 135 may improve adhesion between the light emitting device 120 and the second frame 112 .

In addition, when the resin part 135 includes a material having a reflective characteristic, such as white silicon, the resin part 135 transmits the light provided from the light emitting device 120 in the upper direction of the package body 110 . It is possible to improve the light extraction efficiency of the light emitting device package 100 by reflecting it.

According to an embodiment, after the light emitting device 120 is disposed on the package body 110 , curing of the adhesive 130 may be performed. In addition, after curing of the adhesive 130 is performed, the resin part 135 may be formed and curing of the resin part 135 may be performed separately.

In addition, according to another embodiment, after the resin part 135 is formed, curing of the adhesive 130 and the resin part 135 may be simultaneously performed.

Next, according to the light emitting device package manufacturing method according to the embodiment, as shown in FIGS. 7A and 7B , a first conductive layer 321 and a second conductive layer 322 may be formed.

7A and 7B are a plan view and a cross-sectional view illustrating a state in which a conductive layer is provided in an opening by a method of manufacturing a light emitting device package according to an embodiment of the present invention.

In the light emitting device package 100 according to the embodiment, the lower surface of the first bonding part 121 may be exposed through the first opening TH1 . Also, a lower surface of the second bonding part 122 may be exposed through the second opening TH2 .

According to an embodiment, the first conductive layer 321 may be formed in the first opening TH1 . In addition, the second conductive layer 322 may be formed in the second opening TH2 .

The first conductive layer 321 may be provided in the first opening TH1 . The first conductive layer 321 may be disposed under the first bonding part 121 . A width of the first conductive layer 321 may be smaller than a width of the first bonding portion 121 . The first conductive layer 321 may be disposed in direct contact with the lower surface of the first bonding part 121 . The first conductive layer 321 may be electrically connected to the first bonding part 121 . The first conductive layer 321 may be disposed to be surrounded by the first frame 111 .

The second conductive layer 322 may be provided in the second opening TH2 . The second conductive layer 322 may be disposed under the second bonding part 122 . A width of the second conductive layer 322 may be smaller than a width of the second bonding portion 122 . The second conductive layer 322 may be disposed in direct contact with the lower surface of the second bonding part 122 . The second conductive layer 322 may be electrically connected to the second bonding part 122 . The second conductive layer 322 may be disposed to be surrounded by the second frame 112 .

For example, the first conductive layer 321 and the second conductive layer 322 may be formed using a conductive paste. The first conductive layer 321 and the second conductive layer 322 may be formed using solder paste or silver paste.

Meanwhile, according to an embodiment, the first and second openings TH1 and TH2 may be provided so that the width of the upper surface of the first region is smaller than the width of the lower surface of the second region. Accordingly, the amounts of the first and second conductive layers 321 and 322 provided in the first and second openings TH1 and TH2 are compared to the lower regions of the first and second openings TH1 and TH2. A smaller one may be provided in the upper area.

As described above, as the widths of the upper regions of the first and second openings TH1 and TH2 are narrowed, the first and second bonding portions 121 and 122 and the first and second conductive layers 321 are provided. , 322) can be made smaller. Accordingly, it is possible to prevent the first and second conductive layers 321 and 322 from diffusing in the lateral direction from the lower surfaces of the first and second bonding portions 121 and 122 .

When the first and second conductive layers 321 and 322 are diffused in the lateral direction from the lower surfaces of the first and second bonding portions 121 and 122, the diffused first and second conductive layers 321, 321, 322 ) may come in contact with the active layer of the light emitting device 120 , thereby causing a defect due to a short circuit.

However, according to the embodiment, by reducing the contact area between the first and second bonding portions 121 and 122 and the first and second conductive layers 321 and 322, the first and second conductive layers ( Diffusion of the 321 and 322 in the lateral direction from the lower surfaces of the first and second bonding portions 121 and 122 can be prevented, and defects due to the short circuit of the light emitting device 120 are prevented, so that the light emitting device package Reliability can be improved.

Also, as described above, when the first and second conductive layers 321 and 322 are disposed after the resin part 135 is disposed in the first and second recesses, the first and second conductive layers The resin part 135 may prevent the layers 312 and 322 from diffusing or overflowing to the side surface of the light emitting device 120 .

In addition, according to the embodiment, since the width of the lower region of the first and second openings TH1 and TH2 is wider than the width of the upper region, the first and second openings TH1 and TH2 are formed. Through this, the process of forming the first and second conductive layers 321 and 322 can be easily performed.

In addition, according to an embodiment, as the widths of the upper regions of the first and second openings TH1 and TH2 are narrow, the first and second openings provided in the upper regions of the first and second openings TH1 and TH2 are narrow. The amount of the first and second conductive layers 321 and 322 can be reduced.

Accordingly, since the amount of use of the first and second conductive layers 321 and 322 can be reduced, the manufacturing cost can be reduced while the electrical connection is stably performed.

Next, according to the method of manufacturing the light emitting device package according to the embodiment, the molding part 140 may be provided on the light emitting device 120 as shown in FIGS. 8A and 8B .

8A and 8B are a plan view and a cross-sectional view illustrating a state in which a molding part is provided by a method for manufacturing a light emitting device package according to an embodiment of the present invention.

The molding part 140 may be provided on the light emitting device 120 . The molding unit 140 may be disposed on the first frame 111 and the second frame 112 . The molding part 140 may be disposed in the cavity C provided by the package body 110 . The molding part 140 may be disposed on the resin part 135 .

The molding part 140 may include an insulating material. In addition, the molding unit 140 may include a wavelength conversion unit that receives the light emitted from the light emitting device 120 and provides wavelength-converted light. For example, the molding unit 140 may be formed of at least one selected from a group including a phosphor, a quantum dot, and the like.

As such, according to the light emitting device package manufacturing method according to another embodiment, the periphery of the first and second bonding parts 121 and 122 can be stably sealed by the adhesive 130 and the resin part 135 . be able to

Accordingly, in the process of forming the first and second conductive layers 321 and 322 through the first and second openings TH1 and TH2. Diffusion of the first and second conductive layers 321 and 322 in the lateral direction of the first and second bonding portions 121 and 122 can be effectively prevented.

Therefore, according to the light emitting device package manufacturing method according to the embodiment, the diffusion of the first and second conductive layers 321 and 322 from the lower surfaces of the first and second bonding portions 121 and 122 in the lateral direction is can be prevented, and defects due to a short circuit of the light emitting device 120 can be prevented, so that the reliability of the light emitting device package can be improved.

Meanwhile, in the above description, as shown in FIGS. 7A and 7B , the first conductive layer 321 and the second conductive layer 322 are first formed, and as shown in FIGS. 8A and 8B , the molding The description has been made based on the case in which the part 140 is formed.

However, according to another example of the method of manufacturing a light emitting device package according to the embodiment, the resin part 135 and the molding part 140 are formed first, and the first conductive layer 321 and the second conductive layer ( 322) may be formed later.

In addition, according to another example of the method for manufacturing a light emitting device package according to the embodiment, the resin part 135 may not be formed, but only the molding part 140 may be formed in the cavity of the package body 110 .

Also, according to another embodiment, the first and second conductive layers 321 and 322 may be formed first, and the resin part 135 and the molding part 140 may be formed later.

In the light emitting device package 100 according to the embodiment, power is connected to the first bonding unit 121 through the first opening TH1 area, and the second bonding unit through the second opening TH2 area. Power may be connected to 122 .

Accordingly, the light emitting device 120 can be driven by the driving power supplied through the first bonding unit 121 and the second bonding unit 122 . In addition, the light emitted from the light emitting device 120 can be provided in an upper direction of the package body 110 .

On the other hand, the light emitting device package 100 according to the embodiment described above may be supplied by being mounted on a sub-mount or a circuit board.

However, when a conventional light emitting device package is mounted on a sub-mount or a circuit board, a high-temperature process such as reflow may be applied. In this case, in the reflow process, a re-melting phenomenon may occur in the bonding region between the frame and the light emitting device provided in the light emitting device package, so that the stability of electrical connection and physical coupling may be weakened, and thus the position of the light emitting device may change, and optical and electrical characteristics and reliability of the light emitting device package may be deteriorated.

However, according to the light emitting device package and the light emitting device package manufacturing method according to the embodiment, the first bonding part and the second bonding part of the light emitting device according to the embodiment may receive driving power through the conductive layer disposed in the opening. Therefore, since the adhesive material between the light emitting device and the package body 110 and the adhesive material between the light emitting device 120 and the package body 110 and the light emitting device package and the circuit board are different from each other, remelting (Re) -melting) problem can be prevented. In addition, since the light emitting device 120 is electrically connected to the circuit board through the first and second openings TH1 and TH2 of the package body 110 , the re-melting problem can be prevented. have. Further, the melting point of the conductive layer disposed in the opening may be selected to have a higher value compared to the melting point of a typical bonding material.

Therefore, even when the light emitting device package 100 according to the embodiment is bonded to the main board or the like through a reflow process, a re-melting phenomenon does not occur, so electrical connection and physical bonding force are not deteriorated. There is no advantage.

In addition, according to the light emitting device package 100 and the light emitting device package manufacturing method according to the embodiment, there is no need to expose the package body 110 to high temperature in the process of manufacturing the light emitting device package. Therefore, according to the embodiment, it is possible to prevent the package body 110 from being damaged or discolored by exposure to high temperature.

Accordingly, the selection range for materials constituting the body 113 can be widened. According to an embodiment, the body 113 may be provided using not only an expensive material such as ceramic, but also a relatively inexpensive resin material.

For example, the body 113 includes at least one material selected from the group consisting of PPA (PolyPhtalAmide) resin, PCT (PolyCyclohexylenedimethylene Terephthalate) resin, EMC (Epoxy Molding Compound) resin, and SMC (Silicone Molding Compound) resin. can do.

Meanwhile, the light emitting device package according to the embodiments described above may include various modifications.

First, with reference to FIGS. 9 to 17, modifications of the body applied to the light emitting device package according to the embodiment will be described. In the description of the light emitting device package according to the embodiment with reference to FIGS. 9 to 17 , descriptions of matters overlapping those described with reference to FIGS. 1 to 8 may be omitted.

9 to 11 are views for explaining a modified example of the body 113 applied to the light emitting device package shown in FIG. 3 .

According to the light emitting device package 100 according to the embodiment, as shown in FIG. 9 , the body 113 may include at least two recesses provided on the upper surface.

For example, the body 113 may include a first recess R11 disposed toward the first frame 111 from the upper surface central region. The first recess R11 may be provided in contact with an end of the first frame 111 .

In addition, the body 113 may include a second recess R12 disposed toward the second frame 112 from the upper surface central region. The second recess R12 may be provided in contact with an end of the second frame 112 .

The first recess R11 may be provided to be concave downward from the upper surface of the body 113 and the upper surface of the first frame 111 . The second recess R12 may be provided to be concave downward from the upper surface of the body 113 and the upper surface of the second frame 112 .

According to the light emitting device package 100 according to the embodiment, the adhesive 130 may be provided in the first recess R11 and the second recess R12. The adhesive 130 may be disposed between the light emitting device 120 and the body 113 . The adhesive 130 may be disposed between the first bonding unit 121 and the second bonding unit 122 . For example, the adhesive 130 may be disposed in contact with a side surface of the first bonding unit 121 and a side surface of the second bonding unit 122 .

The first recess R11 and the second recess R12 may provide an appropriate space under the light emitting device 120 in which a kind of underfill process may be performed.

The first recess R11 and the second recess R12 have a first depth so that the adhesive 130 can be sufficiently provided between the lower surface of the light emitting device 120 and the upper surface of the body 113 . More can be provided. In addition, the first recess R11 and the second recess R12 may be provided to have a second depth or less in order to provide a stable strength of the body 113 .

The adhesive 130 may provide a stable fixing force between the light emitting device 120 and the package body 110 . The adhesive 130 may provide a stable fixing force between the light emitting device 120 and the body 113 . The adhesive 130 may be disposed in direct contact with the upper surface of the body 113 , for example. In addition, the adhesive 130 may be disposed in direct contact with the lower surface of the light emitting device 120 .

In addition, in the first recess R11 and the adhesive 130 , the first conductive layer 321 provided in the first opening TH1 is disposed between the first and second openings TH1 and TH2 . It is possible to prevent the light emitting device from moving to the lower region of the light emitting device 120 . In addition, in the second recess R12 and the adhesive 130 , the second conductive layer 322 provided in the second opening TH2 is disposed between the first and second openings TH1 and TH2 . It is possible to prevent the light emitting device from moving to the lower region of the light emitting device 120 . Accordingly, it is possible to prevent the light emitting device 120 from being electrically shorted or deteriorated due to the movement of the first conductive layer 321 or the movement of the second conductive layer 322 .

In addition, when the adhesive 130 is disposed between the first and second recesses R11 and R12 and the light emitting device 120 is disposed on the adhesive 130 , the adhesive 130 is the It may flow in the direction of the first and second bonding portions 121 and 122 . At this time, the adhesive 130 flowing in the direction of the first and second bonding portions 121 and 122 is applied to the first and second to prevent the light emitting device 120 from floating on the package body 110 . It can be manufactured to flow into the recesses R11 and R12.

Meanwhile, FIG. 9 is a cross-sectional view of the body 113 applied to the light emitting device package according to the embodiment, and FIGS. 10 and 11 are plan views of the body 113 shown in FIG. 9 .

For example, as shown in FIG. 10 , the first recess R11 and the second recess R12 may be disposed to be spaced apart from each other with a central region of the body 113 interposed therebetween. The first recess R11 and the second recess R12 may be disposed parallel to each other with a central region of the body 113 interposed therebetween.

Also, as shown in FIG. 11 , the first recess R11 and the second recess R12 may be disposed to be spaced apart from each other with a central region of the body 113 interposed therebetween. Meanwhile, the first recess R11 and the second recess R12 may be disposed to be connected to each other in a closed loop shape with a central region of the body 113 in the middle.

Meanwhile, FIGS. 12 to 14 are views for explaining another modified example of the body applied to the light emitting device package shown in FIG. 3 .

According to the light emitting device package 100 according to the embodiment, as shown in FIG. 12 , the body 113 may include at least three recesses provided on the upper surface.

For example, the body 113 may include a first recess R21 disposed toward the first frame 111 from the central region of the upper surface. The first recess R21 may be provided to be concave from the upper surface to the lower surface of the body 113 .

In addition, the body 113 may include a third recess R23 disposed toward the second frame 112 from the central region of the upper surface. The third recess R23 may be provided to be concave in a direction from an upper surface to a lower surface of the body 113 .

In addition, the body 113 may include a second recess R22 disposed in the central region of the upper surface. The second recess R22 may be provided to be concave from the upper surface to the lower surface of the body 113 . The second recess R22 may be disposed between the first recess R21 and the third recess R23.

According to the light emitting device package 100 according to the embodiment, the adhesive 130 may be provided in the first recess R21 , the second recess R22 , and the third recess R23 . The adhesive 130 may be disposed between the light emitting device 120 and the body 113 . The adhesive 130 may be disposed between the first bonding unit 121 and the second bonding unit 122 . For example, the adhesive 130 may be disposed in contact with a side surface of the first bonding unit 121 and a side surface of the second bonding unit 122 .

The first recess R21 , the second recess R22 , and the third recess R23 are a kind of a type under the light emitting device 120 to attach the light emitting device 120 to the package body. An appropriate space in which an under fill process may be performed may be provided.

The first recess R21 , the second recess R22 , and the third recess R23 are disposed between the lower surface of the light emitting device 120 and the upper surface of the body 113 with the adhesive 130 . It may be provided at a depth equal to or greater than the first depth to be sufficiently provided. In addition, the first recess R21 , the second recess R22 , and the third recess R23 may be provided to have a second depth or less in order to provide a stable strength of the body 113 . .

The adhesive 130 may provide a stable fixing force between the light emitting device 120 and the package body 110 . The adhesive 130 may provide a stable fixing force between the light emitting device 120 and the body 113 . The adhesive 130 may be disposed in direct contact with the upper surface of the body 113 , for example. In addition, the adhesive 130 may be disposed in direct contact with the lower surface of the light emitting device 120 .

In addition, in the first recess R21 and the adhesive 130 , the first conductive layer 321 provided in the first opening TH1 is disposed between the first and second openings TH1 and TH2 . It is possible to prevent the light emitting device from moving to the lower region of the light emitting device 120 . In addition, in the third recess R23 and the adhesive 130 , the second conductive layer 322 provided in the second opening TH2 is disposed between the first and second openings TH1 and TH2 . It is possible to prevent the light emitting device from moving to the lower region of the light emitting device 120 . Accordingly, it is possible to prevent the light emitting device 120 from being electrically shorted or deteriorated due to the movement of the first conductive layer 321 or the movement of the second conductive layer 322 .

In addition, when the adhesive 130 is disposed between the first and third recesses R21 and R23 and the light emitting device 120 is disposed on the adhesive 130 , the adhesive 130 is the It may flow in the direction of the first and second bonding portions 121 and 122 . At this time, the adhesive 130 flowing in the direction of the first and second bonding parts 121 and 122 is applied to the first and third to prevent the light emitting device 120 from floating on the package body 110 . It may be manufactured to flow into the recesses R21 and R23.

Meanwhile, FIG. 12 is a cross-sectional view of the body 113 applied to the light emitting device package according to the embodiment, and FIGS. 13 and 14 are plan views of the body 113 shown in FIG. 12 .

For example, as shown in FIG. 13 , the first recess R21 , the second recess R22 , and the third recess R23 are spaced apart from each other on the upper surface of the body 113 to form one direction may be parallel to each other. The first recess R21 , the second recess R22 , and the third recess R23 may be disposed to extend in one direction from the upper surface of the body 113 .

Also, as shown in FIG. 14 , the first recess R21 and the third recess R23 may be disposed to be spaced apart from each other with the central region of the body 113 interposed therebetween. Meanwhile, the first recess R21 and the third recess R23 may be disposed to be connected to each other in a closed loop shape with a central region of the body 113 in the middle. Also, the second recess R22 may be disposed in a central region of the body 113 . The second recess R22 may be disposed in a space surrounded by the first recess R21 and the third recess R23.

Meanwhile, FIGS. 15 to 17 are views for explaining another modified example of a body applied to the light emitting device package shown in FIG. 3 .

According to the light emitting device package 100 according to the embodiment, as shown in FIG. 15 , the body 113 may include at least two recesses provided on the upper surface.

For example, the body 113 may include a first recess R31 disposed toward the first frame 111 from the central region of the upper surface. The first recess R31 may be provided to be concave in a direction from an upper surface to a lower surface of the body 113 . The first recess R31 may be disposed to be spaced apart from the end of the first frame 111 .

In addition, the body 113 may include a second recess R32 disposed toward the second frame 112 from the upper surface central region. The second recess R32 may be provided to be concave in a direction from an upper surface to a lower surface of the body 113 . The second recess R32 may be disposed to be spaced apart from the end of the second frame 112 .

According to the light emitting device package 100 according to the embodiment, the adhesive 130 may be provided in the first recess R31 and the second recess R32. The adhesive 130 may be disposed between the light emitting device 120 and the body 113 . The adhesive 130 may be disposed between the first bonding unit 121 and the second bonding unit 122 . For example, the adhesive 130 may be disposed in contact with a side surface of the first bonding unit 121 and a side surface of the second bonding unit 122 .

The first recess R31 and the second recess R32 may provide an appropriate space in which a kind of underfill process may be performed under the light emitting device 120 .

The first recess R31 and the second recess R32 have a first depth so that the adhesive 130 can be sufficiently provided between the lower surface of the light emitting device 120 and the upper surface of the body 113 . More can be provided. In addition, the first recess R31 and the second recess R32 may be provided to have a second depth or less in order to provide stable strength of the body 113 .

The adhesive 130 may provide a stable fixing force between the light emitting device 120 and the package body 110 . The adhesive 130 may provide a stable fixing force between the light emitting device 120 and the body 113 . The adhesive 130 may be disposed in direct contact with the upper surface of the body 113 , for example. In addition, the adhesive 130 may be disposed in direct contact with the lower surface of the light emitting device 120 .

In addition, in the first recess R31 and the adhesive 130 , the first conductive layer 321 provided in the first opening TH1 is disposed between the first and second openings TH1 and TH2 . It is possible to prevent the light emitting device from moving to the lower region of the light emitting device 120 . In addition, in the second recess R32 and the adhesive 130 , the second conductive layer 322 provided in the second opening TH2 is disposed between the first and second openings TH1 and TH2 . It is possible to prevent the light emitting device from moving to the lower region of the light emitting device 120 . Accordingly, it is possible to prevent the light emitting device 120 from being electrically shorted or deteriorated due to the movement of the first conductive layer 321 or the movement of the second conductive layer 322 .

In addition, when the adhesive 130 is disposed between the first and second recesses R31 and R32 and the light emitting device 120 is disposed on the adhesive 130 , the adhesive 130 is the It may flow in the direction of the first and second bonding portions 121 and 122 . At this time, the adhesive 130 flowing in the direction of the first and second bonding portions 121 and 122 is applied to the first and second to prevent the light emitting device 120 from floating on the package body 110 . It may be manufactured to flow into the recesses R31 and R32.

Meanwhile, FIG. 15 is a cross-sectional view of a body 113 applied to a light emitting device package according to an embodiment, and FIGS. 16 and 17 are plan views of the body 113 shown in FIG. 15 .

For example, as shown in FIG. 16 , the first recess R31 and the second recess R32 may be spaced apart from each other on the upper surface of the body 113 and disposed in parallel in one direction. The first recess R31 and the second recess R32 may be disposed to extend in one direction from the upper surface of the body 113 .

Also, as shown in FIG. 17 , the first recess R31 and the second recess R32 may be disposed to be spaced apart from each other with the central region of the body 113 interposed therebetween. Meanwhile, the first recess R31 and the second recess R32 may be disposed to be connected to each other in a closed loop shape with a central region of the body 113 in the middle.

Next, another example of a light emitting device package according to an embodiment of the present invention will be described with reference to FIG. 18 .

In describing the light emitting device package according to the embodiment with reference to FIG. 18 , descriptions of matters overlapping those described with reference to FIGS. 1 to 17 may be omitted.

The light emitting device package according to the embodiment may include a package body 110 and a light emitting device 120 as shown in FIG. 18 .

The package body 110 may include a first frame 111 and a second frame 112 . The first frame 111 and the second frame 112 may be disposed to be spaced apart from each other.

The package body 110 may include a body 113 . The body 113 may be disposed between the first frame 111 and the second frame 112 . The body 113 may function as a kind of electrode separation line.

The first frame 111 and the second frame 112 may be provided as insulating frames. The first frame 111 and the second frame 112 may stably provide structural strength of the package body 110 .

In addition, the first frame 111 and the second frame 112 may be provided as conductive frames. The first frame 111 and the second frame 112 may stably provide structural strength of the package body 110 and may be electrically connected to the light emitting device 120 .

Differences between a case in which the first frame 111 and the second frame 112 are formed of an insulating frame and a case that the second frame 112 are formed of a conductive frame will be described later.

According to an embodiment, the light emitting device 120 may include a first bonding unit 121 , a second bonding unit 122 , a light emitting structure 123 , and a substrate 124 .

As shown in FIG. 18 , the light emitting device 120 may include the light emitting structure 123 disposed under the substrate 124 . The first bonding unit 121 and the second bonding unit 122 may be disposed between the light emitting structure 123 and the package body 110 .

The first bonding part 121 may be disposed on a lower surface of the light emitting device 120 . The second bonding part 122 may be disposed on the lower surface of the light emitting device 120 . The first bonding unit 121 and the second bonding unit 122 may be disposed to be spaced apart from each other on the lower surface of the light emitting device 120 .

The first bonding part 121 may be disposed on the first frame 111 . The second bonding part 122 may be disposed on the second frame 112 .

The first bonding part 121 may be disposed between the light emitting structure 123 and the first frame 111 . The second bonding part 122 may be disposed between the light emitting structure 123 and the second frame 112 .

Meanwhile, the light emitting device package according to the embodiment may include a first opening TH1 and a second opening TH2 as shown in FIG. 18 . The first frame 111 may include the first opening TH1 . The second frame 112 may include the second opening TH2 .

The first opening TH1 may be provided in the first frame 111 . The first opening TH1 may be provided through the first frame 111 . The first opening TH1 may be provided through the upper and lower surfaces of the first frame 111 in the first direction.

The first opening TH1 may be disposed under the first bonding portion 121 of the light emitting device 120 . The first opening TH1 may be provided to overlap the first bonding portion 121 of the light emitting device 120 . The first opening TH1 may be provided to overlap the first bonding portion 121 of the light emitting device 120 in a first direction from an upper surface to a lower surface of the first frame 111 .

The second opening TH2 may be provided in the second frame 112 . The second opening TH2 may be provided through the second frame 112 . The second opening TH2 may be provided through the upper and lower surfaces of the second frame 112 in the first direction.

The second opening TH2 may be disposed under the second bonding portion 122 of the light emitting device 120 . The second opening TH2 may be provided to overlap the second bonding portion 122 of the light emitting device 120 . The second opening TH2 may be provided to overlap the second bonding portion 122 of the light emitting device 120 in a first direction from an upper surface to a lower surface of the second frame 112 .

The first opening TH1 and the second opening TH2 may be spaced apart from each other. The first opening TH1 and the second opening TH2 may be disposed to be spaced apart from each other under the lower surface of the light emitting device 120 .

According to an embodiment, the width W1 of the upper region of the first opening TH1 may be smaller than or equal to the width W1 of the first bonding portion 121 . In addition, the width of the upper region of the second opening TH2 may be smaller than or equal to the width of the second bonding portion 122 .

Accordingly, the first bonding portion 121 of the light emitting device 120 and the first frame 111 may be more firmly attached. In addition, the second bonding portion 122 and the second frame 112 of the light emitting device 120 may be more firmly attached.

Also, the width W1 of the upper region of the first opening TH1 may be smaller than or equal to the width W2 of the lower region of the first opening TH1. Also, the width of the upper region of the second opening TH2 may be smaller than or equal to the width of the lower region of the second opening TH2 .

For example, the width W1 of the upper region of the first opening TH1 may be several tens of micrometers to several hundred micrometers. Also, the width W2 of the lower region of the first opening TH1 may be tens of micrometers to several hundreds of micrometers greater than the width W1 of the upper region of the first opening TH1.

In addition, the width of the upper region of the second opening TH2 may be several tens of micrometers to several hundred micrometers. Also, the width of the lower region of the second opening TH2 may be tens of micrometers to several hundreds of micrometers greater than the width of the upper region of the second opening TH2.

Also, the width W2 of the lower region of the first opening TH1 may be wider than the width W1 of the upper region of the first opening TH1 . The first opening TH1 may be provided with a constant width by a predetermined depth in the upper region, and may be provided in an inclined shape toward the lower region.

In addition, the width of the lower region of the second opening TH2 may be wider than the width of the upper region of the second opening TH2 . The second opening TH2 may be provided with a constant width by a predetermined depth in the upper area, and may be provided in an inclined shape toward the lower area.

For example, the first opening TH1 may be provided in an inclined shape in which the width gradually decreases from the lower region to the upper region. Also, the second opening TH2 may be provided in an inclined shape in which the width gradually decreases from the lower region to the upper region.

However, the present invention is not limited thereto, and the inclined surfaces between the upper and lower regions of the first and second openings TH1 and TH2 may have a plurality of inclined surfaces having different inclinations, and the inclined surfaces may be disposed with a curvature. .

A width W3 between the first opening TH1 and the second opening TH2 in the lower surfaces of the first frame 111 and the second frame 112 may be several hundreds of micrometers. A width W3 between the first opening TH1 and the second opening TH2 in the lower surface area of the first frame 111 and the second frame 112 is, for example, 100 micrometers to 150 micrometers. can be provided as

The width W3 between the first opening TH1 and the second opening TH2 in the lower surface of the first frame 111 and the second frame 112 is the light emitting device package ( When 100) is later mounted on a circuit board, a sub-mount, etc., it may be selected to be provided over a certain distance in order to prevent an electrical short between the pads from occurring.

The light emitting device package according to the embodiment may include an adhesive 130 as shown in FIG. 18 .

The adhesive 130 may be disposed between the package body 110 and the light emitting device 120 . The adhesive 130 may be disposed between the upper surface of the package body 110 and the lower surface of the light emitting device 120 . The adhesive 130 may be disposed between the upper surface of the body 113 and the lower surface of the light emitting device 120 .

In addition, the light emitting device package according to the embodiment may include a recess R as shown in FIG. 18 .

The recess R may be provided in the body 113 . The recess R may be provided between the first opening TH1 and the second opening TH2. The recess (R) may be provided to be concave in the direction from the upper surface to the lower surface of the body (113). The recess R may be disposed under the light emitting device 120 . The recess R may be provided to overlap the light emitting device 120 in the first direction.

For example, the adhesive 130 may be disposed in the recess (R). The adhesive 130 may be disposed between the light emitting device 120 and the body 113 . The adhesive 130 may be disposed between the first bonding unit 121 and the second bonding unit 122 . For example, the adhesive 130 may be disposed in contact with a side surface of the first bonding unit 121 and a side surface of the second bonding unit 122 .

In addition, the adhesive 130 may be provided between the light emitting device 120 and the package body 110 . The adhesive 130 may be disposed between the light emitting device 120 and the first frame 111 . The adhesive 130 may be disposed between the light emitting device 120 and the second frame 112 .

The adhesive 130 may provide a stable fixing force between the light emitting device 120 and the package body 110 . The adhesive 130 may provide a stable fixing force between the light emitting device 120 and the body 113 . The adhesive 130 may be disposed in direct contact with the upper surface of the body 113 , for example. In addition, the adhesive 130 may be disposed in direct contact with the lower surface of the light emitting device 120 .

For example, the adhesive 130 may include at least one of an epoxy-based material, a silicone-based material, and a hybrid material including an epoxy-based material and a silicone-based material. . For example, the adhesive 130 may include white silicone.

The adhesive 130 may provide a stable fixing force between the body 113 and the light emitting device 120 , and when light is emitted to a lower surface of the light emitting device 120 , the light emitting device 120 and the light emitting device 120 . A light diffusion function may be provided between the body 113 . When light is emitted from the light emitting device 120 to the lower surface of the light emitting device 120 , the adhesive 130 provides a light diffusion function, thereby improving the light extraction efficiency of the light emitting device package 100 .

In addition, the adhesive 130 may reflect light emitted from the light emitting device 120 . When the adhesive 130 includes a reflective function, the adhesive 130 may be made of a material including TiO ₂ , Silicone, and the like.

The recess R may provide an appropriate space under the light emitting device 120 in which a kind of underfill process may be performed. The recess R may be provided at a first depth or more so that the adhesive 130 may be sufficiently provided between the lower surface of the light emitting device 120 and the upper surface of the body 113 . In addition, the recess (R) may be provided to a second depth or less in order to provide a stable strength of the body (113).

In addition, as shown in FIG. 18 , the light emitting device package according to the embodiment may include a first conductive layer 321 and a second conductive layer 322 . The first conductive layer 321 may be disposed to be spaced apart from the second conductive layer 322 .

The first conductive layer 321 may be provided in the first opening TH1 . The first conductive layer 321 may be disposed under the first bonding part 121 . A width of the first conductive layer 321 may be smaller than a width of the first bonding portion 121 . The width of the upper region of the first conductive layer 321 may be smaller than the width of the first bonding portion 121 .

The first bonding part 121 may have a width in a second direction perpendicular to the first direction in which the first opening TH1 is formed. A width of the first bonding portion 121 may be greater than a width of an upper region of the first opening TH1 in the second direction.

The first conductive layer 321 may be disposed in direct contact with the lower surface of the first bonding part 121 . The first conductive layer 321 may be electrically connected to the first bonding part 121 . The first conductive layer 321 may be disposed to be surrounded by the first frame 111 .

The second conductive layer 322 may be provided in the second opening TH2 . The second conductive layer 322 may be disposed under the second bonding part 122 . A width of the second conductive layer 322 may be smaller than a width of the second bonding portion 122 . The width of the upper region of the second conductive layer 322 may be smaller than the width of the second bonding portion 122 .

The second bonding part 122 may have a width in a second direction perpendicular to the first direction in which the second opening TH2 is formed. A width of the second bonding portion 122 may be greater than a width of an upper region of the second opening TH2 in the second direction.

The second conductive layer 322 may be disposed in direct contact with the lower surface of the second bonding part 122 . The second conductive layer 322 may be electrically connected to the second bonding part 122 . The second conductive layer 322 may be disposed to be surrounded by the second frame 112 .

The first conductive layer 321 and the second conductive layer 322 may include one material selected from the group consisting of Ag, Au, Pt, or the like or an alloy thereof. However, the present invention is not limited thereto, and a material capable of securing a conductive function may be used as the first conductive layer 321 and the second conductive layer 322 .

For example, the first conductive layer 321 and the second conductive layer 322 may be formed using a conductive paste. The conductive paste may include solder paste, silver paste, or the like.

Meanwhile, as shown in FIG. 18 , the first conductive layer 321 and the second conductive layer 322 according to an embodiment may be provided in a plurality of layers.

For example, the first conductive layer 321 may include a first upper conductive layer 321a and a first lower conductive layer 321b. The first upper conductive layer 321a may be provided in an upper region of the first opening TH1 . The first lower conductive layer 321b may be provided in a lower region of the first opening TH1 .

In addition, the second conductive layer 322 may include a second upper conductive layer 322a and a second lower conductive layer 322b. The second upper conductive layer 322a may be provided in an upper region of the second opening TH2 . The second lower conductive layer 322b may be provided in a lower region of the second opening TH2 .

According to an embodiment, the first upper conductive layer 321a and the first lower conductive layer 321b may include different materials. The first upper conductive layer 321a and the first lower conductive layer 321b may have different melting points. For example, the melting point of the first upper conductive layer 321a may be selected to be higher than the melting point of the first lower conductive layer 321b.

For example, a conductive paste for forming the first upper conductive layer 321a and a conductive paste for forming the first lower conductive layer 321b may be provided differently. According to an embodiment, the first upper conductive layer 321a may be formed using, for example, silver paste, and the first lower conductive layer 321b may be formed using, for example, a solder paste.

According to an embodiment, when the first upper conductive layer 321a is formed of silver paste, the silver paste provided in the first opening TH1 is applied to the first bonding part 121 and the first frame 111 . ), and the degree of penetration was detected as weak or absent.

Accordingly, when the first upper conductive layer 321a is formed of silver paste, it is possible to prevent the light emitting device 120 from being electrically short-circuited or deteriorated.

Also, when the first upper conductive layer 321a is formed of silver paste and the first lower conductive layer 321b is formed of solder paste, the entire first conductive layer 321 is formed of silver paste. There is also the advantage that manufacturing cost can be reduced compared to that.

Similarly, the conductive paste for forming the second upper conductive layer 322a and the conductive paste for forming the second lower conductive layer 322b may be provided differently. According to an embodiment, the second upper conductive layer 322a may be formed using, for example, silver paste, and the second lower conductive layer 322b may be formed using, for example, a solder paste.

According to an embodiment, when the second upper conductive layer 322a is formed of silver paste, the silver paste provided in the second opening TH2 is applied to the second bonding part 122 and the second frame 112 . ), and the degree of penetration was detected as weak or absent.

Accordingly, when the second upper conductive layer 322a is formed of silver paste, it is possible to prevent the light emitting device 120 from being electrically short-circuited or deteriorated.

Also, when the second upper conductive layer 322a is formed of silver paste and the second lower conductive layer 321b is formed of solder paste, the entire second conductive layer 322 is formed of silver paste. There is also the advantage that manufacturing cost can be reduced compared to that.

According to an embodiment, as shown in FIG. 18 , the first and second conductive layers 321 and 322 may be provided in the first and second openings TH1 and TH2, respectively.

As described above, the width W1 of the upper region of the first and second openings TH1 and TH2 may be smaller than the width W2 of the lower region. Accordingly, the amounts of the first and second conductive layers 321 and 322 provided in the first and second openings TH1 and TH2 are compared to the lower regions of the first and second openings TH1 and TH2. A smaller one may be provided in the upper area.

As described above, as the widths of the upper regions of the first and second openings TH1 and TH2 are narrowed, the first and second bonding portions 121 and 122 and the first and second conductive layers 321 are provided. , 322) can be made smaller. Accordingly, it is possible to prevent the first and second conductive layers 321 and 322 from diffusing in the lateral direction from the lower surfaces of the first and second bonding portions 121 and 122 .

When the first and second conductive layers 321 and 322 are diffused in the lateral direction from the lower surfaces of the first and second bonding portions 121 and 122, the diffused first and second conductive layers 321, 321, 322 ) may come in contact with the active layer of the light emitting device 120 , thereby causing a defect due to a short circuit.

However, according to the embodiment, by reducing the contact area between the first and second bonding portions 121 and 122 and the first and second conductive layers 321 and 322, the first and second conductive layers ( Diffusion of the 321 and 322 in the lateral direction from the lower surfaces of the first and second bonding portions 121 and 122 can be prevented, and defects due to the short circuit of the light emitting device 120 are prevented, so that the light emitting device package Reliability can be improved.

In addition, according to an embodiment, as the width of the lower region of the first and second openings TH1 and TH2 is wider than the width of the upper region, the first and second openings TH1 and TH2 The process of forming the first and second conductive layers 321 and 322 may be easily performed.

In addition, according to an embodiment, as the widths of the upper regions of the first and second openings TH1 and TH2 are narrow, the first and second openings provided in the upper regions of the first and second openings TH1 and TH2 are narrow. The amount of the first and second conductive layers 321 and 322 can be reduced.

Accordingly, since the amount of use of the first and second conductive layers 321 and 322 can be reduced, the manufacturing cost can be reduced while the electrical connection is stably performed.

Also, as shown in FIG. 18 , the light emitting device package according to the embodiment may include a first upper recess R3 and a second upper recess R4 .

The first upper recess R3 may be provided on an upper surface of the first frame 111 . The first upper recess R3 may be provided to be concave in a direction from an upper surface to a lower surface of the first frame 111 . The first upper recess R3 may be spaced apart from the first opening TH1.

The second upper recess R4 may be provided on the upper surface of the second frame 112 . The second upper recess R4 may be provided to be concave in a direction from an upper surface to a lower surface of the second frame 112 . The second upper recess R4 may be spaced apart from the second opening TH2.

In addition, the light emitting device package according to the embodiment may include a resin part 135 as shown in FIG. 18 .

The resin part 135 may be disposed between the first frame 111 and the light emitting device 120 . The resin part 135 may be disposed between the second frame 112 and the light emitting device 120 . The resin part 135 may be provided on the bottom surface of the cavity C provided in the package body 110 .

The resin part 135 may be provided in the first upper recess R3 and the second upper recess R4 .

The resin part 135 may be disposed on a side surface of the first bonding part 121 . The resin part 135 may be provided in the first upper recess R3 , and may extend to an area where the first bonding part 121 is disposed. The resin part 135 may be disposed under the light emitting structure 123 .

Also, the resin part 135 may be disposed on a side surface of the second bonding part 122 . The resin part 135 may be provided in the second upper recess R4 , and may extend to an area where the second bonding part 122 is disposed. The resin part 135 may be disposed under the light emitting structure 123 .

In addition, the first upper recess R3 and the second upper recess R4 may provide sufficient space for the resin part 135 to be provided under the light emitting device 120 . The first upper recess R3 and the second upper recess R4 may provide an appropriate space in which a kind of underfill process may be performed under the light emitting device 120 .

Accordingly, the resin part 135 filled in the first upper recess R3 and the second upper recess R4 moves around the first bonding part 121 and the second bonding part 122 . can be effectively sealed.

For example, the resin part 135 may include at least one of an epoxy-based material, a silicone-based material, and a hybrid material including an epoxy-based material and a silicone-based material. have. For example, the resin part 135 may be a reflective part that reflects light emitted from the light emitting device 120 , for example TiO ₂ It may be a resin including a reflective material such as The resin part 135 may include white silicone.

The resin part 135 may be disposed under the light emitting device 120 to perform a sealing function. In addition, the resin part 135 may improve adhesion between the light emitting device 120 and the first frame 111 . The resin part 135 may improve adhesion between the light emitting device 120 and the second frame 112 .

The resin part 135 may seal the periphery of the first bonding part 121 and the second bonding part 122 . In the resin part 135 , the first conductive layer 321 and the second conductive layer 322 leave the first opening TH1 region and the second opening TH2 region in the light emitting device 120 . It can be prevented from spreading and moving in the direction.

When the first and second conductive layers 321 and 322 diffuse and move toward the outer surface of the light emitting device 120 , the first and second conductive layers 321 and 322 are formed between the active layer of the light emitting device 120 and It may come into contact with it and cause a defect due to a short circuit. Accordingly, when the resin part 135 is disposed, it is possible to prevent a short circuit between the first and second conductive layers 321 and 322 and the active layer, thereby improving the reliability of the light emitting device package according to the embodiment.

In addition, when the resin part 135 includes a material having a reflective characteristic, such as white silicon, the resin part 135 transmits the light provided from the light emitting device 120 in the upper direction of the package body 110 . It is possible to improve the light extraction efficiency of the light emitting device package 100 by reflecting it.

In addition, the light emitting device package 100 according to the embodiment may include a molding unit 140 as shown in FIG. 18 .

The molding part 140 may be provided on the light emitting device 120 . The molding unit 140 may be disposed on the first frame 111 and the second frame 112 . The molding part 140 may be disposed in the cavity C provided by the package body 110 . The molding part 140 may be disposed on the resin part 135 .

In the light emitting device package according to the embodiment, power is connected to the first bonding unit 121 through the first opening TH1 region, and the second bonding unit 122 through the second opening TH2 region. may be connected to power.

Accordingly, the light emitting device 120 can be driven by the driving power supplied through the first bonding unit 121 and the second bonding unit 122 . In addition, the light emitted from the light emitting device 120 can be provided in an upper direction of the package body 110 .

On the other hand, the light emitting device package 100 according to the embodiment described above may be supplied by being mounted on a sub-mount or a circuit board.

However, when a conventional light emitting device package is mounted on a sub-mount or a circuit board, a high-temperature process such as reflow may be applied. In this case, in the reflow process, a re-melting phenomenon may occur in the bonding region between the light emitting device and the lead frame provided in the light emitting device package, so that the stability of electrical connection and physical bonding may be weakened.

However, according to the light emitting device package and the light emitting device package manufacturing method according to the embodiment, the first electrode and the second electrode of the light emitting device according to the embodiment may receive driving power through the conductive layer disposed in the opening. In addition, the melting point of the conductive layer disposed in the opening may be selected to have a higher value than that of a general bonding material.

Therefore, even when the light emitting device package 100 according to the embodiment is bonded to the main board or the like through a reflow process, a re-melting phenomenon does not occur, so electrical connection and physical bonding force are not deteriorated. There is no advantage.

In addition, according to the light emitting device package 100 and the light emitting device package manufacturing method according to the embodiment, there is no need to expose the package body 110 to high temperature in the process of manufacturing the light emitting device package. Therefore, according to the embodiment, it is possible to prevent the package body 110 from being damaged or discolored by exposure to high temperature.

Accordingly, the selection range for materials constituting the body 113 can be widened. According to an embodiment, the body 113 may be provided using not only an expensive material such as ceramic, but also a relatively inexpensive resin material.

For example, the body 113 includes at least one material selected from the group consisting of PPA (PolyPhtalAmide) resin, PCT (PolyCyclohexylenedimethylene Terephthalate) resin, EMC (Epoxy Molding Compound) resin, and SMC (Silicone Molding Compound) resin. can do.

Meanwhile, the light emitting device package 100 according to the embodiment described with reference to FIGS. 1 to 18 may be supplied by being mounted on a sub-mount or a circuit board.

Next, another example of a light emitting device package according to an embodiment of the present invention will be described with reference to FIG. 19 .

The light emitting device package 300 according to the embodiment of the present invention shown in FIG. 19 is an example in which the light emitting device package described with reference to FIGS. 1 to 18 is mounted on a circuit board 310 and supplied.

In the description of the light emitting device package 300 according to an embodiment of the present invention with reference to FIG. 19 , descriptions of matters overlapping those described with reference to FIGS. 1 to 18 may be omitted.

The light emitting device package 300 according to the embodiment may include a circuit board 310 , a package body 110 , and a light emitting device 120 as shown in FIG. 19 .

The circuit board 310 may include a first pad 311 , a second pad 312 , and a support substrate 313 . A power supply circuit for controlling driving of the light emitting device 120 may be provided on the support substrate 313 .

The package body 110 may be disposed on the circuit board 310 . The first pad 311 and the first bonding part 121 may be electrically connected to each other. The second pad 312 and the second bonding part 122 may be electrically connected to each other.

The first pad 311 and the second pad 312 may include a conductive material. For example, the first pad 311 and the second pad 312 may be selected from among Ti, Cu, Ni, Au, Cr, Ta, Pt, Sn, Ag, P, Fe, Sn, Zn, and Al. It may include at least one selected material or an alloy thereof. The first pad 311 and the second pad 312 may be provided in a single layer or in multiple layers.

The package body 110 may include a first frame 111 and a second frame 112 . The first frame 111 and the second frame 112 may be disposed to be spaced apart from each other.

The package body 110 may include a body 113 . The body 113 may be disposed between the first frame 111 and the second frame 112 . The body 113 may function as a kind of electrode separation line.

The first frame 111 and the second frame 112 may be provided as insulating frames. The first frame 111 and the second frame 112 may stably provide structural strength of the package body 110 .

In addition, the first frame 111 and the second frame 112 may be provided as conductive frames. The first frame 111 and the second frame 112 may stably provide structural strength of the package body 110 and may be electrically connected to the light emitting device 120 .

The package body 110 may include a first opening TH1 and a second opening TH2 penetrating from the upper surface to the lower surface in the first direction. The first frame 111 may include the first opening TH1 . The second frame 112 may include the second opening TH2 .

The first opening TH1 may be provided in the first frame 111 . The first opening TH1 may be provided through the first frame 111 . The first opening TH1 may be provided through the upper and lower surfaces of the first frame 111 in the first direction.

The first opening TH1 may be disposed under the first bonding portion 121 of the light emitting device 120 . The first opening TH1 may be provided to overlap the first bonding portion 121 of the light emitting device 120 . The first opening TH1 may be provided to overlap the first bonding portion 121 of the light emitting device 120 in a first direction from an upper surface to a lower surface of the first frame 111 .

The second opening TH2 may be provided in the second frame 112 . The second opening TH2 may be provided through the second frame 112 . The second opening TH2 may be provided through the upper and lower surfaces of the second frame 112 in the first direction.

The second opening TH2 may be disposed under the second bonding portion 122 of the light emitting device 120 . The second opening TH2 may be provided to overlap the second bonding portion 122 of the light emitting device 120 . The second opening TH2 may be provided to overlap the second bonding portion 122 of the light emitting device 120 in a first direction from an upper surface to a lower surface of the second frame 112 .

The first opening TH1 and the second opening TH2 may be spaced apart from each other. The first opening TH1 and the second opening TH2 may be disposed to be spaced apart from each other under the lower surface of the light emitting device 120 .

According to an embodiment, the width W1 of the upper region of the first opening TH1 may be smaller than or equal to the width W1 of the first bonding portion 121 . In addition, the width of the upper region of the second opening TH2 may be smaller than or equal to the width of the second bonding portion 122 .

Accordingly, the first bonding portion 121 of the light emitting device 120 and the first frame 111 may be more firmly attached. In addition, the second bonding portion 122 and the second frame 112 of the light emitting device 120 may be more firmly attached.

Also, the width W1 of the upper region of the first opening TH1 may be smaller than or equal to the width W2 of the lower region of the first opening TH1. Also, the width of the upper region of the second opening TH2 may be smaller than or equal to the width of the lower region of the second opening TH2 .

For example, the width W1 of the upper region of the first opening TH1 may be several tens of micrometers to several hundred micrometers. Also, the width W2 of the lower region of the first opening TH1 may be tens of micrometers to several hundreds of micrometers greater than the width W1 of the upper region of the first opening TH1.

In addition, the width of the upper region of the second opening TH2 may be several tens of micrometers to several hundred micrometers. Also, the width of the lower region of the second opening TH2 may be tens of micrometers to several hundreds of micrometers greater than the width of the upper region of the second opening TH2.

Also, the width W2 of the lower region of the first opening TH1 may be wider than the width W1 of the upper region of the first opening TH1 . The first opening TH1 may be provided with a constant width by a predetermined depth in the upper region, and may be provided in an inclined shape toward the lower region.

In addition, the width of the lower region of the second opening TH2 may be wider than the width of the upper region of the second opening TH2 . The second opening TH2 may be provided with a constant width by a predetermined depth in the upper area, and may be provided in an inclined shape toward the lower area.

For example, the first opening TH1 may be provided in an inclined shape in which the width gradually decreases from the lower region to the upper region. Also, the second opening TH2 may be provided in an inclined shape in which the width gradually decreases from the lower region to the upper region.

However, the present invention is not limited thereto, and the inclined surfaces between the upper and lower regions of the first and second openings TH1 and TH2 may have a plurality of inclined surfaces having different inclinations, and the inclined surfaces may be disposed with curvature. .

The light emitting device package 300 according to the embodiment may include an adhesive 130 as shown in FIG. 19 .

The adhesive 130 may be disposed between the package body 110 and the light emitting device 120 . The adhesive 130 may be disposed between the upper surface of the package body 110 and the lower surface of the light emitting device 120 . The adhesive 130 may be disposed between the upper surface of the body 113 and the lower surface of the light emitting device 120 .

In addition, the light emitting device package 300 according to the embodiment may include a recess R as shown in FIG. 19 .

The recess R may be provided in the body 113 . The recess R may be provided between the first opening TH1 and the second opening TH2. The recess (R) may be provided to be concave in the direction from the upper surface to the lower surface of the body (113). The recess R may be disposed under the light emitting device 120 . The recess R may be provided to overlap the light emitting device 120 in the first direction.

For example, the adhesive 130 may be disposed in the recess (R). The adhesive 130 may be disposed between the light emitting device 120 and the body 113 . The adhesive 130 may be disposed between the first bonding unit 121 and the second bonding unit 122 . For example, the adhesive 130 may be disposed in contact with a side surface of the first bonding unit 121 and a side surface of the second bonding unit 122 .

In addition, the adhesive 130 may be provided between the light emitting device 120 and the package body 110 . The adhesive 130 may be disposed between the light emitting device 120 and the first frame 111 . The adhesive 130 may be disposed between the light emitting device 120 and the second frame 112 .

The adhesive 130 may provide a stable fixing force between the light emitting device 120 and the package body 110 . The adhesive 130 may provide a stable fixing force between the light emitting device 120 and the body 113 . The adhesive 130 may be disposed in direct contact with the upper surface of the body 113 , for example. In addition, the adhesive 130 may be disposed in direct contact with the lower surface of the light emitting device 120 .

For example, the adhesive 130 may include at least one of an epoxy-based material, a silicone-based material, and a hybrid material including an epoxy-based material and a silicone-based material. . For example, the adhesive 130 may include white silicone.

The adhesive 130 may provide a stable fixing force between the body 113 and the light emitting device 120 , and when light is emitted to a lower surface of the light emitting device 120 , the light emitting device 120 and the light emitting device 120 . A light diffusion function may be provided between the body 113 . When light is emitted from the light emitting device 120 to the lower surface of the light emitting device 120 , the adhesive 130 provides a light diffusion function, thereby improving the light extraction efficiency of the light emitting device package 300 .

In addition, the adhesive 130 may reflect light emitted from the light emitting device 120 . When the adhesive 130 includes a reflective function, the adhesive 130 may be made of a material including TiO ₂ , Silicone, and the like.

In addition, the light emitting device package 300 according to the embodiment may include a first conductive layer 321 and a second conductive layer 322 as shown in FIG. 19 . The first conductive layer 321 may be disposed to be spaced apart from the second conductive layer 322 .

The first conductive layer 321 may be provided in the first opening TH1 . The first conductive layer 321 may be disposed under the first bonding part 121 . A width of the first conductive layer 321 may be smaller than a width of the first bonding portion 121 . The width of the upper region of the first conductive layer 321 may be smaller than the width of the first bonding portion 121 .

The first bonding part 121 may have a width in a second direction perpendicular to the first direction in which the first opening TH1 is formed. A width of the first bonding portion 121 may be greater than a width of an upper region of the first opening TH1 in the second direction.

The first conductive layer 321 may be disposed in direct contact with the lower surface of the first bonding part 121 . The first conductive layer 321 may be electrically connected to the first bonding part 121 . The first conductive layer 321 may be disposed to be surrounded by the first frame 111 .

The second conductive layer 322 may be provided in the second opening TH2 . The second conductive layer 322 may be disposed under the second bonding part 122 . A width of the second conductive layer 322 may be smaller than a width of the second bonding portion 122 . The width of the upper region of the second conductive layer 322 may be smaller than the width of the second bonding portion 122 .

The second bonding part 122 may have a width in a second direction perpendicular to the first direction in which the second opening TH2 is formed. A width of the second bonding portion 122 may be greater than a width of an upper region of the second opening TH2 in the second direction.

The second conductive layer 322 may be disposed in direct contact with the lower surface of the second bonding part 122 . The second conductive layer 322 may be electrically connected to the second bonding part 122 . The second conductive layer 322 may be disposed to be surrounded by the second frame 112 .

The first conductive layer 321 and the second conductive layer 322 may include one material selected from the group consisting of Ag, Au, Pt, or the like or an alloy thereof. However, the present invention is not limited thereto, and a material capable of securing a conductive function may be used as the first conductive layer 321 and the second conductive layer 322 .

According to an embodiment, the first pad 311 of the circuit board 310 may be electrically connected to the first conductive layer 321 . Also, the second pad 312 of the circuit board 310 may be electrically connected to the second conductive layer 322 .

Meanwhile, according to an embodiment, a separate bonding layer may be additionally provided between the first pad 311 and the first conductive layer 321 . In addition, a separate bonding layer may be additionally provided between the second pad 312 and the second conductive layer 322 .

Also, according to another embodiment, the first conductive layer 321 and the second conductive layer 322 may be mounted on the circuit board 310 by eutectic bonding.

In the light emitting device package 300 according to the embodiment described with reference to FIG. 19 , the power supplied from the circuit board 310 passes through the first conductive layer 321 and the second conductive layer 322 . It is transmitted to the first bonding unit 121 and the second bonding unit 122 , respectively. At this time, the first pad 311 of the circuit board 310 and the first conductive layer 321 are in direct contact, and the second pad 312 of the circuit board 310 and the second conductive layer ( 322) is in direct contact.

Accordingly, according to the light emitting device package 300 according to the embodiment shown in FIG. 19 , the first frame 111 and the second frame 112 may be formed of an insulating frame. In addition, according to the light emitting device package 300 according to the embodiment shown in FIG. 19 , the first frame 111 and the second frame 112 may be formed of a conductive frame.

As described above, according to the light emitting device package and the light emitting device package manufacturing method according to the embodiment, the first bonding part and the second bonding part of the light emitting device according to the embodiment receive driving power through the conductive layer disposed in the opening. can be provided. In addition, the melting point of the conductive layer disposed in the opening may be selected to have a higher value than that of a general bonding material.

Therefore, since the light emitting device package according to the embodiment does not cause a re-melting phenomenon even when bonding to the main board or the like through a reflow process, the electrical connection and physical bonding force are not deteriorated. have.

In addition, according to the light emitting device package and the light emitting device package manufacturing method according to the embodiment, the package body 110 does not need to be exposed to high temperature in the process of manufacturing the light emitting device package. Therefore, according to the embodiment, it is possible to prevent the package body 110 from being damaged or discolored by exposure to high temperature.

Accordingly, the selection range for materials constituting the body 113 can be widened. According to an embodiment, the body 113 may be provided using not only an expensive material such as ceramic, but also a relatively inexpensive resin material.

For example, the body 113 includes at least one material selected from the group consisting of PPA (PolyPhtalAmide) resin, PCT (PolyCyclohexylenedimethylene Terephthalate) resin, EMC (Epoxy Molding Compound) resin, and SMC (Silicone Molding Compound) resin. can do.

On the other hand, the light emitting device package 400 according to the embodiment of the present invention shown in FIG. 20 is another example in which the light emitting device package 100 described with reference to FIGS. 1 to 18 is mounted on a circuit board 410 and supplied. is shown.

In the description of the light emitting device package 400 according to an embodiment of the present invention with reference to FIG. 20 , descriptions of matters overlapping those described with reference to FIGS. 1 to 19 may be omitted.

The light emitting device package 400 according to the embodiment may include a circuit board 410 , a package body 110 , and a light emitting device 120 as shown in FIG. 20 .

The circuit board 410 may include a first pad 411 , a second pad 412 , and a substrate 413 . A power supply circuit for controlling driving of the light emitting device 120 may be provided on the support substrate 313 .

The package body 110 may be disposed on the circuit board 410 . The first pad 411 and the first bonding part 121 may be electrically connected to each other. The second pad 412 and the second bonding part 122 may be electrically connected.

The first pad 411 and the second pad 412 may include a conductive material. For example, the first pad 411 and the second pad 412 may be selected from among Ti, Cu, Ni, Au, Cr, Ta, Pt, Sn, Ag, P, Fe, Sn, Zn, and Al. It may include at least one selected material or an alloy thereof. The first pad 411 and the second pad 412 may be provided in a single layer or in multiple layers.

The package body 110 may include a first frame 111 and a second frame 112 . The first frame 111 and the second frame 112 may be disposed to be spaced apart from each other.

The package body 110 may include a body 113 . The body 113 may be disposed between the first frame 111 and the second frame 112 . The body 113 may function as a kind of electrode separation line.

The first frame 111 and the second frame 112 may be provided as conductive frames. The first frame 111 and the second frame 112 may stably provide structural strength of the package body 110 and may be electrically connected to the light emitting device 120 .

The package body 110 may include a first opening TH1 and a second opening TH2 penetrating from an upper surface to a lower surface in the first direction. The first frame 111 may include the first opening TH1 . The second frame 112 may include the second opening TH2 .

The first opening TH1 may be provided in the first frame 111 . The first opening TH1 may be provided through the first frame 111 . The first opening TH1 may be provided through the upper and lower surfaces of the first frame 111 in the first direction.

The first opening TH1 may be disposed under the first bonding portion 121 of the light emitting device 120 . The first opening TH1 may be provided to overlap the first bonding portion 121 of the light emitting device 120 . The first opening TH1 may be provided to overlap the first bonding portion 121 of the light emitting device 120 in a first direction from an upper surface to a lower surface of the first frame 111 .

The second opening TH2 may be provided in the second frame 112 . The second opening TH2 may be provided through the second frame 112 . The second opening TH2 may be provided through the upper and lower surfaces of the second frame 112 in the first direction.

The second opening TH2 may be disposed under the second bonding portion 122 of the light emitting device 120 . The second opening TH2 may be provided to overlap the second bonding portion 122 of the light emitting device 120 . The second opening TH2 may be provided to overlap the second bonding portion 122 of the light emitting device 120 in a first direction from an upper surface to a lower surface of the second frame 112 .

The first opening TH1 and the second opening TH2 may be spaced apart from each other. The first opening TH1 and the second opening TH2 may be disposed to be spaced apart from each other under the lower surface of the light emitting device 120 .

According to an embodiment, the width W1 of the upper region of the first opening TH1 may be smaller than or equal to the width W1 of the first bonding portion 121 . In addition, the width of the upper region of the second opening TH2 may be smaller than or equal to the width of the second bonding portion 122 .

Accordingly, the first bonding portion 121 of the light emitting device 120 and the first frame 111 may be more firmly attached. In addition, the second bonding portion 122 and the second frame 112 of the light emitting device 120 may be more firmly attached.

Also, the width W1 of the upper region of the first opening TH1 may be smaller than or equal to the width W2 of the lower region of the first opening TH1. Also, the width of the upper region of the second opening TH2 may be smaller than or equal to the width of the lower region of the second opening TH2 .

For example, the width W1 of the upper region of the first opening TH1 may be several tens of micrometers to several hundred micrometers. Also, the width W2 of the lower region of the first opening TH1 may be tens of micrometers to several hundreds of micrometers greater than the width W1 of the upper region of the first opening TH1.

In addition, the width of the upper region of the second opening TH2 may be several tens of micrometers to several hundred micrometers. Also, the width of the lower region of the second opening TH2 may be tens of micrometers to several hundreds of micrometers greater than the width of the upper region of the second opening TH2.

Also, the width W2 of the lower region of the first opening TH1 may be wider than the width W1 of the upper region of the first opening TH1 . The first opening TH1 may be provided with a constant width by a predetermined depth in the upper region, and may be provided in an inclined shape toward the lower region.

In addition, the width of the lower region of the second opening TH2 may be wider than the width of the upper region of the second opening TH2 . The second opening TH2 may be provided with a constant width by a predetermined depth in the upper area, and may be provided in an inclined shape toward the lower area.

For example, the first opening TH1 may be provided in an inclined shape in which the width gradually decreases from the lower region to the upper region. Also, the second opening TH2 may be provided in an inclined shape in which the width gradually decreases from the lower region to the upper region.

However, the present invention is not limited thereto, and the inclined surfaces between the upper and lower regions of the first and second openings TH1 and TH2 may have a plurality of inclined surfaces having different inclinations, and the inclined surfaces may be disposed with curvature. .

The light emitting device package 400 according to the embodiment may include an adhesive 130 as shown in FIG. 20 .

The adhesive 130 may be disposed between the package body 110 and the light emitting device 120 . The adhesive 130 may be disposed between the upper surface of the package body 110 and the lower surface of the light emitting device 120 . The adhesive 130 may be disposed between the upper surface of the body 113 and the lower surface of the light emitting device 120 .

In addition, the light emitting device package 400 according to the embodiment may include a recess R as shown in FIG. 20 .

The recess R may be provided in the body 113 . The recess R may be provided between the first opening TH1 and the second opening TH2. The recess (R) may be provided to be concave in the direction from the upper surface to the lower surface of the body (113). The recess R may be disposed under the light emitting device 120 . The recess R may be provided to overlap the light emitting device 120 in the first direction.

For example, the adhesive 130 may be disposed in the recess (R). The adhesive 130 may be disposed between the light emitting device 120 and the body 113 . The adhesive 130 may be disposed between the first bonding unit 121 and the second bonding unit 122 . For example, the adhesive 130 may be disposed in contact with a side surface of the first bonding unit 121 and a side surface of the second bonding unit 122 .

In addition, the adhesive 130 may be provided between the light emitting device 120 and the package body 110 . The adhesive 130 may be disposed between the light emitting device 120 and the first frame 111 . The adhesive 130 may be disposed between the light emitting device 120 and the second frame 112 .

The adhesive 130 may provide a stable fixing force between the light emitting device 120 and the package body 110 . The adhesive 130 may provide a stable fixing force between the light emitting device 120 and the body 113 . The adhesive 130 may be disposed in direct contact with the upper surface of the body 113 , for example. In addition, the adhesive 130 may be disposed in direct contact with the lower surface of the light emitting device 120 .

For example, the adhesive 130 may include at least one of an epoxy-based material, a silicone-based material, and a hybrid material including an epoxy-based material and a silicone-based material. . For example, the adhesive 130 may include white silicone.

The adhesive 130 may provide a stable fixing force between the body 113 and the light emitting device 120 , and when light is emitted to a lower surface of the light emitting device 120 , the light emitting device 120 and the light emitting device 120 . A light diffusion function may be provided between the body 113 . When light is emitted from the light emitting device 120 to the lower surface of the light emitting device 120 , the adhesive 130 provides a light diffusion function, thereby improving the light extraction efficiency of the light emitting device package 300 .

In addition, the adhesive 130 may reflect light emitted from the light emitting device 120 . When the adhesive 130 includes a reflective function, the adhesive 130 may be made of a material including TiO ₂ , Silicone, and the like.

In addition, the light emitting device package 400 according to the embodiment may include a first conductive layer 321 and a second conductive layer 322 as shown in FIG. 20 . The first conductive layer 321 may be disposed to be spaced apart from the second conductive layer 322 .

The first conductive layer 321 may be provided in the first opening TH1 . The first conductive layer 321 may be disposed under the first bonding part 121 . A width of the first conductive layer 321 may be smaller than a width of the first bonding portion 121 . The width of the upper region of the first conductive layer 321 may be smaller than the width of the first bonding portion 121 .

The first bonding part 121 may have a width in a second direction perpendicular to the first direction in which the first opening TH1 is formed. A width of the first bonding portion 121 may be greater than a width of an upper region of the first opening TH1 in the second direction.

The first conductive layer 321 may be disposed in direct contact with the lower surface of the first bonding part 121 . The first conductive layer 321 may be electrically connected to the first bonding part 121 . The first conductive layer 321 may be disposed to be surrounded by the first frame 111 .

The second conductive layer 322 may be provided in the second opening TH2 . The second conductive layer 322 may be disposed under the second bonding part 122 . A width of the second conductive layer 322 may be smaller than a width of the second bonding portion 122 . The width of the upper region of the second conductive layer 322 may be smaller than the width of the second bonding portion 122 .

The second bonding part 122 may have a width in a second direction perpendicular to the first direction in which the second opening TH2 is formed. A width of the second bonding portion 122 may be greater than a width of an upper region of the second opening TH2 in the second direction.

The second conductive layer 322 may be disposed in direct contact with the lower surface of the second bonding part 122 . The second conductive layer 322 may be electrically connected to the second bonding part 122 . The second conductive layer 322 may be disposed to be surrounded by the second frame 112 .

The first conductive layer 321 and the second conductive layer 322 may include one material selected from the group consisting of Ag, Au, Pt, or the like or an alloy thereof. However, the present invention is not limited thereto, and a material capable of securing a conductive function may be used as the first conductive layer 321 and the second conductive layer 322 .

According to an embodiment, the first pad 411 of the circuit board 410 may be electrically connected to the first conductive layer 321 . Also, the second pad 412 of the circuit board 410 may be electrically connected to the second conductive layer 322 .

The first pad 411 may be electrically connected to the first frame 111 . Also, the second pad 412 may be electrically connected to the second frame 112 .

Meanwhile, according to an embodiment, a separate bonding layer may be additionally provided between the first pad 411 and the first frame 111 . In addition, a separate bonding layer may be additionally provided between the second pad 412 and the second frame 112 .

In the light emitting device package 400 according to the embodiment described with reference to FIG. 20 , the power supplied from the circuit board 410 passes through the first conductive layer 321 and the second conductive layer 322 . It is transmitted to the first bonding unit 121 and the second bonding unit 122 , respectively. At this time, the first pad 411 of the circuit board 410 and the first frame 111 are in direct contact with each other, and the second pad 412 and the second frame 112 of the circuit board 410 are in direct contact with each other. This can be in direct contact.

As described above, according to the light emitting device package and the light emitting device package manufacturing method according to the embodiment, the first bonding part and the second bonding part of the light emitting device according to the embodiment receive driving power through the conductive layer disposed in the opening. can be provided. In addition, the melting point of the conductive layer disposed in the opening may be selected to have a higher value than that of a general bonding material.

Therefore, since the light emitting device package according to the embodiment does not cause a re-melting phenomenon even when bonding to the main board or the like through a reflow process, the electrical connection and physical bonding force are not deteriorated. have.

In addition, according to the light emitting device package and the light emitting device package manufacturing method according to the embodiment, the package body 110 does not need to be exposed to high temperature in the process of manufacturing the light emitting device package. Therefore, according to the embodiment, it is possible to prevent the package body 110 from being damaged or discolored by exposure to high temperature.

Accordingly, the selection range for materials constituting the body 113 can be widened. According to an embodiment, the body 113 may be provided using not only an expensive material such as ceramic, but also a relatively inexpensive resin material.

For example, the body 113 includes at least one material selected from the group consisting of PPA (PolyPhtalAmide) resin, PCT (PolyCyclohexylenedimethylene Terephthalate) resin, EMC (Epoxy Molding Compound) resin, and SMC (Silicone Molding Compound) resin. can do.

On the other hand, in the case of the light emitting device package according to the embodiment described above, the description has been made based on a case in which one opening is provided under each bonding unit.

However, according to the light emitting device package according to another embodiment, a plurality of openings may be provided under each bonding unit. In addition, the plurality of openings may have different widths or may be provided as openings having the same width.

In addition, according to the light emitting device package according to the embodiment described above, the package body 110 may be provided so as to include only the support member 113 having a flat upper surface and not include the reflective portion disposed at an angle.

In other words, according to the light emitting device package according to the embodiment, the package body 110 may be provided in a structure that provides a cavity (C). In addition, the package body 110 may be provided with a flat top surface without providing a cavity (C).

In addition, according to the light emitting device package according to the embodiment described above, when the first and second openings TH1 and TH2 are provided in the first and second frames 111 and 112 of the package body 110 . Although described based on , the first and second openings TH1 and TH2 may be provided in the body 113 of the package body 110 .

As described above, when the first and second openings TH1 and TH2 are provided in the body 113 of the package body 110 , the upper surface of the body 113 along the long axis direction of the light emitting device 120 . The length may be greater than the length between the first bonding portion 121 and the second bonding portion 122 of the light emitting device 120 .

In addition, when the first and second openings TH1 and TH2 are provided in the body 113 of the package body 110 , the light emitting device package according to the embodiment includes the first and second frames 111 and 112 . ) may not be included.

Meanwhile, in the light emitting device package described above, a flip chip light emitting device may be provided as an example.

For example, the flip chip light emitting device may be provided as a transmissive flip chip light emitting device that emits light in six directions, or may be provided as a reflective flip chip light emitting device that emits light in five directions.

The reflective flip-chip light emitting device emitting light in the five-plane direction may have a structure in which a reflective layer is disposed in a direction close to the package package body 110 . For example, in the reflective flip-chip light emitting device, an insulating reflective layer (eg, Distributed Bragg Reflector, Omni Directional Reflector, etc.) and/or a conductive reflective layer (eg, Ag, Al, Ni, Au, etc.) may be included.

In addition, the flip-chip light emitting device emitting light in the six-sided direction has a first bonding portion electrically connected to the first conductivity-type semiconductor layer and a second bonding portion electrically connected to the second conductivity-type semiconductor layer, It may be provided as a general horizontal light emitting device in which light is emitted between the first bonding unit and the second bonding unit.

In addition, the flip-chip light emitting device emitting light in the six-plane direction is a transmissive flip-chip light emitting device including both a reflective region in which a reflective layer is disposed between the first and second bonding portions and a transmissive region through which light is emitted. can be provided.

Here, the transmissive flip-chip light emitting device refers to a device that emits light to the upper surface, four side surfaces, and six surfaces of the lower surface. In addition, the reflective flip-chip light emitting device refers to a device that emits light to five surfaces of the upper surface and four side surfaces.

Then, an example of a flip-chip light emitting device applied to a light emitting device package according to an embodiment of the present invention will be described with reference to the accompanying drawings.

First, a light emitting device according to an embodiment of the present invention will be described with reference to FIGS. 21 and 22 . 21 is a plan view illustrating a light emitting device according to an embodiment of the present invention, and FIG. 22 is a cross-sectional view taken along line A-A of the light emitting device shown in FIG. 21 .

Meanwhile, for better understanding, in FIG. 21 , the first sub-electrode is disposed under the first bonding unit 1171 and the second bonding unit 1172 , but is electrically connected to the first bonding unit 1171 . 1141 and the second sub-electrode 1142 electrically connected to the second bonding part 1172 are shown to be visible.

The light emitting device 1100 according to the embodiment may include a semiconductor structure 1110 disposed on a substrate 1105 as shown in FIGS. 21 and 22 .

The substrate 1105 may be selected from a group including a sapphire substrate (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge. For example, the substrate 1105 may be provided as a patterned sapphire substrate (PSS) in which an uneven pattern is formed on an upper surface of the substrate 1105 .

The semiconductor structure 1110 may include a first conductivity type semiconductor layer 1111 , an active layer 1112 , and a second conductivity type semiconductor layer 1113 . The active layer 1112 may be disposed between the first conductivity-type semiconductor layer 1111 and the second conductivity-type semiconductor layer 1113 . For example, the active layer 1112 may be disposed on the first conductivity-type semiconductor layer 1111 , and the second conductivity-type semiconductor layer 1113 may be disposed on the active layer 1112 .

According to an embodiment, the first conductivity-type semiconductor layer 1111 may be provided as an n-type semiconductor layer, and the second conductivity-type semiconductor layer 1113 may be provided as a p-type semiconductor layer. Of course, according to another embodiment, the first conductivity-type semiconductor layer 1111 may be provided as a p-type semiconductor layer, and the second conductivity-type semiconductor layer 1113 may be provided as an n-type semiconductor layer.

Hereinafter, for convenience of description, it will be described based on a case in which the first conductivity-type semiconductor layer 1111 is provided as an n-type semiconductor layer and the second conductivity-type semiconductor layer 1113 is provided as a p-type semiconductor layer. .

The light emitting device 1100 according to the embodiment may include an ohmic contact layer 1130 as shown in FIG. 22 . The ohmic contact layer 1130 may improve current diffusion to increase light output. The arrangement position and shape of the ohmic contact layer 1130 will be further described while explaining the method of manufacturing the light emitting device according to the embodiment.

For example, the ohmic contact layer 1130 may include at least one selected from the group consisting of a metal, a metal oxide, and a metal nitride. The ohmic contact layer 1130 may include a light-transmitting material.

The ohmic contact layer 1130 may be, for example, indium tin oxide (ITO), indium zinc oxide (IZO), IZO nitride (IZON), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), or IGZO ( indium gallium zinc oxide), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, RuOx/ITO, Ni/IrOx/Au, Ni It may include at least one selected from the group including /IrOx/Au/ITO, Pt, Ni, Au, Rh, and Pd.

The light emitting device 1100 according to the embodiment may include a reflective layer 1160 as shown in FIGS. 21 and 22 . The reflective layer 1160 may include a first reflective layer 1161 , a second reflective layer 1162 , and a third reflective layer 1163 . The reflective layer 1160 may be disposed on the ohmic contact layer 1130 .

The second reflective layer 1162 may include a first opening h1 exposing the ohmic contact layer 1130 . The second reflective layer 1162 may include a plurality of first openings h1 disposed on the ohmic contact layer 1130 .

The first reflective layer 1161 may include a plurality of second openings h2 exposing an upper surface of the first conductivity-type semiconductor layer 1111 .

The third reflective layer 1163 may be disposed between the first reflective layer 1161 and the second reflective layer 1162 . For example, the third reflective layer 1163 may be connected to the first reflective layer 1161 . Also, the third reflective layer 1163 may be connected to the second reflective layer 1162 . The third reflective layer 1163 may be disposed in direct physical contact with the first reflective layer 1161 and the second reflective layer 1162 .

For example, the width W5 of the third reflective layer 1163 may be smaller than the width W4 of the recess R described with reference to FIGS. 1 to 20 .

Accordingly, light emitted between the first reflective layer 1161 and the third reflective layer 1163 may be incident on the first adhesive 130 disposed in the recess R region. The light emitted in the downward direction of the light emitting device may be diffused by the first adhesive 130 , and light extraction efficiency may be improved.

In addition, light emitted between the second reflective layer 1162 and the third reflective layer 1163 may be incident on the first adhesive 130 disposed in the recess R region. The light emitted in the downward direction of the light emitting device may be diffused by the first adhesive 130 , and light extraction efficiency may be improved.

The reflective layer 1160 according to an embodiment may contact the second conductivity-type semiconductor layer 1113 through a plurality of contact holes provided in the ohmic contact layer 1130 . The reflective layer 1160 may physically contact the upper surface of the second conductivity-type semiconductor layer 1113 through a plurality of contact holes provided in the ohmic contact layer 1130 .

The shape of the ohmic contact layer 1130 and the shape of the reflective layer 1160 according to the embodiment will be further described while explaining the method of manufacturing the light emitting device according to the embodiment.

The reflective layer 1160 may be provided as an insulating reflective layer. For example, the reflective layer 1160 may be provided as a distributed Bragg reflector (DBR) layer. In addition, the reflective layer 1160 may be provided as an Omni Directional Reflector (ODR) layer. In addition, the reflective layer 1160 may be provided by stacking a DBR layer and an ODR layer.

The light emitting device 1100 according to the embodiment may include a first sub-electrode 1141 and a second sub-electrode 1142 as shown in FIGS. 21 and 22 .

The first sub-electrode 1141 may be electrically connected to the first conductivity-type semiconductor layer 1111 inside the second opening h2 . The first sub-electrode 1141 may be disposed on the first conductivity-type semiconductor layer 1111 . For example, in the light emitting device 1100 according to the embodiment, the first sub-electrode 1141 passes through the second conductivity-type semiconductor layer 1113 and the active layer 1112 to form a first conductivity-type semiconductor layer ( It may be disposed on the upper surface of the first conductivity-type semiconductor layer 1111 in a recess disposed up to a partial region of 1111 .

The first sub-electrode 1141 may be electrically connected to the upper surface of the first conductivity-type semiconductor layer 1111 through the second opening h2 provided in the first reflective layer 1161 . The second opening h2 and the recess may vertically overlap. For example, as shown in FIGS. 21 and 22 , the first sub-electrode 1141 may include the first sub-electrode 1141 in the plurality of recess regions. It may be in direct contact with the upper surface of the first conductivity type semiconductor layer 1111 .

The second sub-electrode 1142 may be electrically connected to the second conductivity-type semiconductor layer 1113 . The second sub-electrode 1142 may be disposed on the second conductivity-type semiconductor layer 1113 . In an embodiment, the ohmic contact layer 1130 may be disposed between the second sub-electrode 1142 and the second conductivity-type semiconductor layer 1113 .

The second sub-electrode 1142 may be electrically connected to the second conductivity-type semiconductor layer 1113 through the first opening h1 provided in the second reflective layer 1162 . For example, as shown in FIGS. 21 and 22 , the second sub-electrode 1142 is electrically connected to the second conductivity-type semiconductor layer 1113 through the ohmic contact layer 1130 in the plurality of P regions. can be connected to

As shown in FIGS. 21 and 22, the second sub-electrode 1142 is connected to the ohmic contact layer ( 1130) may be in direct contact with the upper surface.

According to an embodiment, as shown in FIGS. 21 and 22 , the first sub-electrode 1141 and the second sub-electrode 1142 may have polarities and may be disposed to be spaced apart from each other.

The first sub-electrode 1141 may be provided in a plurality of line shapes, for example. In addition, the second sub-electrode 1142 may be provided in a plurality of line shapes, for example. The first sub-electrode 1141 may be disposed between a plurality of adjacent second sub-electrodes 1142 . The second sub-electrode 1142 may be disposed between a plurality of adjacent first sub-electrodes 1141 .

When the first sub-electrode 1141 and the second sub-electrode 1142 have different polarities, different numbers of electrodes may be disposed. For example, when the first sub-electrode 1141 is an n-electrode and the second sub-electrode 1142 is a p-electrode, the number of the second sub-electrodes 1142 is greater than that of the first sub-electrode 1141 . may be more When the electrical conductivity and/or resistance of the second conductivity type semiconductor layer 1113 and the first conductivity type semiconductor layer 1111 are different from each other, the first sub-electrode 1141 and the second sub-electrode 1142 Thus, electrons and holes injected into the semiconductor structure 1110 may be balanced, and thus, optical characteristics of the light emitting device may be improved.

The first sub-electrode 1141 and the second sub-electrode 1142 may be formed in a single-layer or multi-layer structure. For example, the first sub-electrode 1141 and the second sub-electrode 1142 may be ohmic electrodes. For example, the first sub-electrode 1141 and the second sub-electrode 1142 are ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, and Ni/IrOx/Au/ITO, Ag , at least one of Ni, Cr, Ti, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, or an alloy of two or more of these materials.

The light emitting device 1100 according to the embodiment may include a protective layer 1150 as shown in FIGS. 21 and 22 .

The protective layer 1150 may include a plurality of third openings h3 exposing the second sub-electrode 1142 . The plurality of third openings h3 may be disposed to correspond to the plurality of PB regions provided in the second sub-electrode 1142 .

Also, the protective layer 1150 may include a plurality of fourth openings h4 exposing the first sub-electrode 1141 . The plurality of fourth openings h4 may be disposed to correspond to the plurality of NB regions provided in the first sub-electrode 1141 .

The protective layer 1150 may be disposed on the reflective layer 1160 . The passivation layer 1150 may be disposed on the first reflective layer 1161 , the second reflective layer 1162 , and the third reflective layer 1163 .

For example, the protective layer 1150 may be made of an insulating material. For example, the protective layer 1150 is Si _x O _y , SiO _x N _y , Si _x N _y , Al _x O _y It may be formed of at least one material selected from the group comprising:

The light emitting device 1100 according to the embodiment may include a first bonding unit 1171 and a second bonding unit 1172 disposed on the protective layer 1150, as shown in FIGS. 21 and 22 . have.

The first bonding part 1171 may be disposed on the first reflective layer 1161 . Also, the second bonding part 1172 may be disposed on the second reflective layer 1162 . The second bonding unit 1172 may be disposed to be spaced apart from the first bonding unit 1171 .

The first bonding part 1171 may contact the upper surface of the first sub-electrode 1141 through the plurality of fourth openings h4 provided in the passivation layer 1150 in the plurality of NB regions. The plurality of NB regions may be vertically displaced from the second opening h2 . When the plurality of NB regions and the second openings h2 are vertically shifted from each other, the current injected into the first bonding portion 1171 may be evenly spread in the horizontal direction of the first sub-electrode 1141, Accordingly, currents may be uniformly injected in the plurality of NB regions.

In addition, the second bonding part 1172 may be in contact with the upper surface of the second sub-electrode 1142 through the third openings h3 provided in the protective layer 1150 in the plurality of PB regions. have. When the plurality of PB regions and the plurality of first openings h1 do not overlap vertically, the current injected into the second bonding part 1172 is evenly spread in the horizontal direction of the second sub-electrode 1142 . Therefore, currents may be uniformly injected in the plurality of PB regions.

As described above, according to the light emitting device 1100 according to the embodiment, the first bonding portion 1171 and the first sub-electrode 1141 may contact each other in the plurality of fourth openings h4 regions. Also, the second bonding part 1172 and the second sub-electrode 1142 may contact each other in a plurality of regions. Accordingly, according to the embodiment, since power can be supplied through a plurality of regions, there is an advantage that a current dispersion effect occurs and an operating voltage can be reduced according to an increase in the contact area and dispersion of the contact region.

In addition, according to the light emitting device 1100 according to the embodiment, as shown in FIG. 22 , the first reflective layer 1161 is disposed under the first sub-electrode 1141 , and the second reflective layer 1162 . This second sub-electrode 1142 is disposed below. Accordingly, the first reflective layer 1161 and the second reflective layer 1162 reflect light emitted from the active layer 1112 of the semiconductor structure 1110 to form a first sub-electrode 1141 and a second sub-electrode ( 1142), the light absorption may be minimized to improve the luminous intensity (Po).

For example, the first reflective layer 1161 and the second reflective layer 1162 are made of an insulating material, and a material having high reflectivity, for example, a DBR structure, is used for reflection of light emitted from the active layer 1112 . can be achieved

The first reflective layer 1161 and the second reflective layer 1162 may form a DBR structure in which materials having different refractive indices are repeatedly disposed. For example, the first reflective layer 1161 and the second reflective layer 1162 may include TiO ₂ , SiO ₂ , Ta ₂ O ₅ , HfO ₂ . It may be arranged in a single-layer or multi-layer structure including at least one of them.

In addition, according to another embodiment, without being limited thereto, the first reflective layer 1161 and the second reflective layer 1162 emit light from the active layer 1112 according to the wavelength of the light emitted from the active layer 1112 . It can be freely selected to adjust the reflectivity to light.

Also, according to another embodiment, the first reflective layer 1161 and the second reflective layer 1162 may be provided as ODR layers. According to another embodiment, the first reflective layer 1161 and the second reflective layer 1162 may be provided in a hybrid form in which a DBR layer and an ODR layer are stacked.

When the light emitting device according to the embodiment is mounted in a flip-chip bonding method and implemented as a light emitting device package, the light provided from the semiconductor structure 1110 may be emitted through the substrate 1105 . Light emitted from the semiconductor structure 1110 may be reflected by the first reflective layer 1161 and the second reflective layer 1162 to be emitted toward the substrate 1105 .

In addition, light emitted from the semiconductor structure 1110 may also be emitted in a lateral direction of the semiconductor structure 1110 . In addition, the light emitted from the semiconductor structure 1110 may include the first bonding unit 1171 and the second bonding unit 1171 and the second bonding unit 1172 among the surfaces on which the first bonding unit 1171 and the second bonding unit 1172 are disposed. The portion 1172 may be discharged to the outside through an area where the portion 1172 is not provided.

Specifically, the light emitted from the semiconductor structure 1110 includes the first reflective layer 1161 and the second reflective layer among the surfaces on which the first bonding part 1171 and the second bonding part 1172 are disposed. In 1162 , the third reflective layer 1163 may be emitted to the outside through a region not provided.

Accordingly, the light emitting device 1100 according to the embodiment can emit light in six directions surrounding the semiconductor structure 1110 , and the luminous intensity can be remarkably improved.

On the other hand, according to the light emitting device according to the embodiment, when viewed from the upper direction of the light emitting device 1100, the sum of the areas of the first bonding portion 1171 and the second bonding portion 1172 is the first bonding The portion 1171 and the second bonding portion 1172 may be provided equal to or smaller than 60% of the total area of the upper surface of the light emitting device 1100 on which the second bonding portion 1172 is disposed.

For example, the total area of the upper surface of the light emitting device 1100 may correspond to an area defined by the horizontal and vertical lengths of the lower surface of the first conductivity-type semiconductor layer 1111 of the semiconductor structure 1110 . . Also, the total area of the upper surface of the light emitting device 1100 may correspond to the area of the upper surface or the lower surface of the substrate 1105 .

In this way, by providing the sum of the areas of the first bonding portion 1171 and the second bonding portion 1172 equal to or smaller than 60% of the total area of the light emitting device 1100, the first bonding The amount of light emitted to the surface on which the part 1171 and the second bonding part 1172 are disposed can be increased. Accordingly, according to the embodiment, since the amount of light emitted in the direction of six surfaces of the light emitting device 1100 is increased, the light extraction efficiency is improved and the luminous intensity (Po) can be increased.

In addition, when viewed from the upper direction of the light emitting device 1100 , the sum of the area of the first bonding part 1171 and the area of the second bonding part 1172 is 30 of the total area of the light emitting device 1100 . It may be provided equal to or greater than %.

In this way, the sum of the areas of the first bonding unit 1171 and the second bonding unit 1172 is equal to or larger than 30% of the total area of the light emitting device 1100, so that the first bonding unit 1172 Stable mounting may be performed through the unit 1171 and the second bonding unit 1172 , and electrical characteristics of the light emitting device 1100 may be secured.

In the light emitting device 1100 according to the embodiment, the sum of the areas of the first bonding part 1171 and the second bonding part 1172 is the light emitting device 1100 in consideration of securing light extraction efficiency and bonding stability. ) of 30% or more of the total area and may be selected as 60% or less.

That is, when the sum of the areas of the first bonding portion 1171 and the second bonding portion 1172 is 30% or more to 100% or less of the total area of the light emitting device 1100, the Stable mounting can be performed by securing electrical characteristics and securing bonding force to be mounted on the light emitting device package.

In addition, when the sum of the areas of the first bonding portion 1171 and the second bonding portion 1172 is greater than 0% to 60% or less of the total area of the light emitting device 1100 , the first bonding portion 1171 ) and the amount of light emitted to the surface on which the second bonding part 1172 is disposed increases, so that the light extraction efficiency of the light emitting device 1100 may be improved, and the luminous intensity Po may be increased.

In the embodiment, the area of the first bonding unit 1171 and the second bonding unit 1172 is to secure the electrical characteristics of the light emitting device 1100 and the bonding force to be mounted on the light emitting device package, and to increase the luminous intensity. A sum of 30% or more to 60% or less of the total area of the light emitting device 1100 was selected.

Also, according to the light emitting device 1100 according to the embodiment, the third reflective layer 1163 may be disposed between the first bonding unit 1171 and the second bonding unit 1172 . For example, the length W5 of the third reflective layer 1163 along the long axis direction of the light emitting device 1100 corresponds to the interval between the first bonding unit 1171 and the second bonding unit 1172 . can be placed. In addition, the area of the third reflective layer 1163 may be, for example, 10% or more and 25% or less of the entire upper surface of the light emitting device 1100 .

When the area of the third reflective layer 1163 is 10% or more of the entire upper surface of the light emitting device 1100, discoloration of the package body disposed under the light emitting device or occurrence of cracks can be prevented, and 25% In the following case, it is advantageous to secure light extraction efficiency to emit light on six surfaces of the light emitting device.

In addition, in another embodiment, the area of the third reflective layer 1163 is arranged to be greater than 0% to less than 10% of the entire upper surface of the light emitting device 1100 in order to secure the light extraction efficiency larger, but not limited thereto. In order to prevent discoloration or cracking in the package body, the area of the third reflective layer 1163 may be disposed to be greater than 25% to less than 100% of the entire upper surface of the light emitting device 1100. .

In addition, a second region provided between the first bonding portion 1171 or the second bonding portion 1172 adjacent to a side surface disposed in the long axis direction of the light emitting device 1100 is generated in the semiconductor structure 1110 . Light can be transmitted through and emitted.

In addition, light generated by the light emitting structure is transmitted to a third area provided between the first bonding unit 1171 or the second bonding unit 1172 adjacent to the side surface disposed in the minor axis direction of the light emitting device 1100 . It can be permeated and released.

According to an embodiment, the size of the first reflective layer 1161 may be several micrometers larger than the size of the first bonding part 1171 . For example, the area of the first reflective layer 1161 may be large enough to completely cover the area of the first bonding part 1171 . In consideration of the process error, the length of one side of the first reflective layer 1161 may be greater than the length of one side of the first bonding part 1171 , for example, by about 4 micrometers to 10 micrometers.

In addition, the size of the second reflective layer 1162 may be several micrometers larger than the size of the second bonding part 1172 . For example, the area of the second reflective layer 1162 may be large enough to completely cover the area of the second bonding part 1172 . In consideration of the process error, the length of one side of the second reflective layer 1162 may be greater than the length of one side of the second bonding part 1172, for example, by about 4 micrometers to 10 micrometers.

According to an embodiment, light emitted from the semiconductor structure 1110 by the first reflective layer 1161 and the second reflective layer 1162 is emitted from the first bonding part 1171 and the second bonding part 1172 . ) can be reflected without being incident on it. Accordingly, according to an embodiment, it is possible to minimize loss of light generated and emitted from the semiconductor structure 1110 by being incident on the first bonding unit 1171 and the second bonding unit 1172 .

In addition, according to the light emitting device 1100 according to the embodiment, since the third reflective layer 1163 is disposed between the first bonding part 1171 and the second bonding part 1172, the first bonding part ( 1171) and the amount of light emitted between the second bonding unit 1172 can be adjusted.

As described above, the light emitting device 1100 according to the embodiment may be mounted by, for example, a flip chip bonding method and provided in the form of a light emitting device package. At this time, when the package body on which the light emitting device 1100 is mounted is provided with resin or the like, the package body is discolored by strong light of a short wavelength emitted from the light emitting device 1100 in the lower region of the light emitting device 1100 . or cracks may occur.

However, according to the light emitting device 1100 according to the embodiment, since the amount of light emitted between the region where the first bonding unit 1171 and the second bonding unit 1172 is disposed can be adjusted, the light emitting device 1100 ) to prevent discoloration or cracking of the package body disposed in the lower region.

According to an embodiment, in an area of 20% or more of the upper surface of the light emitting device 1100 on which the first bonding portion 1171 , the second bonding portion 1172 , and the third reflective layer 1163 are disposed, the semiconductor Light generated by the structure 1110 may be transmitted and emitted.

Accordingly, according to the embodiment, since the amount of light emitted in the direction of six surfaces of the light emitting device 1100 is increased, the light extraction efficiency is improved and the luminous intensity (Po) can be increased. In addition, it is possible to prevent discoloration or cracking of the package body disposed close to the lower surface of the light emitting device 1100 .

In addition, according to the light emitting device 1100 according to the embodiment, a plurality of contact holes C1 , C2 , and C3 may be provided in the ohmic contact layer 1130 . The second conductivity type semiconductor layer 1113 and the reflective layer 1160 may be adhered to each other through a plurality of contact holes C1 , C2 , and C3 provided in the ohmic contact layer 1130 . Since the reflective layer 1160 can be in direct contact with the second conductivity-type semiconductor layer 1113 , the adhesive force can be improved compared to when the reflective layer 1160 comes into contact with the ohmic contact layer 1130 .

When the reflective layer 1160 is in direct contact with only the ohmic contact layer 1130 , the bonding or adhesive force between the reflective layer 1160 and the ohmic contact layer 1130 may be weakened. For example, when the insulating layer and the metal layer are combined, the bonding force or adhesive force between the materials may be weakened.

For example, when the bonding or adhesive strength between the reflective layer 1160 and the ohmic contact layer 1130 is weak, peeling may occur between the two layers. As such, when peeling occurs between the reflective layer 1160 and the ohmic contact layer 1130 , the characteristics of the light emitting device 1100 may be deteriorated, and reliability of the light emitting device 1100 may not be secured.

However, according to an embodiment, since the reflective layer 1160 may be in direct contact with the second conductivity-type semiconductor layer 1113 , the reflective layer 1160 , the ohmic contact layer 1130 , and the second conductivity type semiconductor The bonding force and adhesive force between the layers 1113 may be stably provided.

Therefore, according to the embodiment, since the bonding force between the reflective layer 1160 and the second conductivity-type semiconductor layer 1113 can be stably provided, the reflective layer 1160 is separated from the ohmic contact layer 1130 . can be prevented In addition, since the coupling force between the reflective layer 1160 and the second conductivity-type semiconductor layer 1113 can be stably provided, the reliability of the light emitting device 1100 can be improved.

Meanwhile, as described above, a plurality of contact holes C1 , C2 , and C3 may be provided in the ohmic contact layer 1130 . Light emitted from the active layer 1112 is incident on the reflective layer 1160 through a plurality of contact holes C1 , C2 , and C3 provided in the ohmic contact layer 1130 to be reflected. Accordingly, it is possible to reduce the loss of light generated by the active layer 1112 when it is incident on the ohmic contact layer 1130 , and the light extraction efficiency can be improved. Accordingly, according to the light emitting device 1100 according to the embodiment, the luminous intensity can be improved.

Then, a method of manufacturing a light emitting device according to an embodiment will be described with reference to the accompanying drawings. In describing a method of manufacturing a light emitting device according to an embodiment, descriptions of matters overlapping with those described with reference to FIGS. 21 and 22 may be omitted.

First, according to the method of manufacturing a light emitting device according to an embodiment, a semiconductor structure 1110 may be formed on a substrate 1105 as shown in FIGS. 23A and 23B . 23A is a plan view illustrating a shape of a semiconductor structure 1110 formed according to a method for manufacturing a light emitting device according to an embodiment, and FIG. 23B is a cross-sectional view illustrating a process taken along line A-A of the light emitting device shown in FIG. 23A.

According to an embodiment, a semiconductor structure 1110 may be formed on the substrate 1105 . For example, a first conductivity type semiconductor layer 1111 , an active layer 1112 , and a second conductivity type semiconductor layer 1113 may be formed on the substrate 1105 .

According to an embodiment, a partial region of the first conductivity-type semiconductor layer 1111 may be exposed through a mesa etching process. The semiconductor structure 1110 may include a plurality of mesa openings M exposing the first conductivity-type semiconductor layer 1111 by mesa etching. For example, the mesa opening M may be provided in a plurality of circular shapes. Also, the mesa opening M may be referred to as a recess. The mesa opening M may be provided not only in a circular shape, but also in various shapes such as an oval or a polygon.

Next, as shown in FIGS. 24A and 24B , an ohmic contact layer 1130 may be formed. 24A is a plan view showing the shape of the ohmic contact layer 1130 formed according to the method of manufacturing a light emitting device according to an embodiment, and FIG. 24B is a cross-sectional view of the process taken along the line A-A of the light emitting device shown in FIG. 24A.

According to an embodiment, the ohmic contact layer 1130 may be formed on the second conductivity-type semiconductor layer 1113 . The ohmic contact layer 1130 may include a plurality of openings M1 provided in a region corresponding to the mesa opening M. As shown in FIG.

For example, the opening M1 may be provided in a plurality of circular shapes. The opening M1 may be provided not only in a circular shape, but also in various shapes such as an oval or a polygon.

The ohmic contact layer 1130 may include a first region R1 , a second region R2 , and a third region R3 . The first region R1 and the second region R2 may be spaced apart from each other. Also, the third region R3 may be disposed between the first region R1 and the second region R2 .

The first region R1 may include a plurality of openings M1 provided in a region corresponding to the mesa opening M of the semiconductor structure 1110 . Also, the first region R1 may include a plurality of first contact holes C1 . For example, a plurality of the first contact holes C1 may be provided around the opening M1 .

The second region R2 may include a plurality of openings M1 provided in a region corresponding to the mesa opening M of the semiconductor structure 1110 . Also, the second region R2 may include a plurality of second contact holes C2 . For example, a plurality of the second contact holes C2 may be provided around the opening M1 .

The third region R3 may include a plurality of openings M1 provided in a region corresponding to the mesa opening M of the semiconductor structure 1110 . Also, the first region R1 may include a plurality of first contact holes C1 . For example, a plurality of the first contact holes C1 may be provided around the opening M1 .

According to an embodiment, the first contact hole C1 , the second contact hole C2 , and the third contact hole C3 may have a diameter of several micrometers to several tens of micrometers. The first contact hole C1 , the second contact hole C2 , and the third contact hole C3 may have, for example, a diameter of 7 micrometers to 20 micrometers.

The first contact hole C1 , the second contact hole C2 , and the third contact hole C3 may be provided not only in a circular shape but also in various shapes such as an ellipse or a polygon.

According to an embodiment, the second conductivity type semiconductor disposed under the ohmic contact layer 1130 by the first contact hole C1 , the second contact hole C2 , and the third contact hole C3 . Layer 1113 may be exposed.

The functions of the opening M1 , the first contact hole C1 , the second contact hole C2 , and the third contact hole C3 will be further described later while a subsequent process is described.

Next, as shown in FIGS. 25A and 25B , a reflective layer 1160 may be formed. 25A is a plan view showing the shape of the reflective layer 1160 formed according to the method for manufacturing a light emitting device according to an embodiment, and FIG. 25B is a cross-sectional view illustrating a process taken along the line A-A of the light emitting device shown in FIG. 25A.

The reflective layer 1160 may include a first reflective layer 1161 , a second reflective layer 1162 , and a third reflective layer 1163 . The reflective layer 1160 may be disposed on the ohmic contact layer 1130 . The reflective layer 1160 may be disposed on the first conductivity-type semiconductor layer 1111 and the second conductivity-type semiconductor layer 1113 .

The first reflective layer 1161 and the second reflective layer 1162 may be disposed to be spaced apart from each other. The third reflective layer 1163 may be disposed between the first reflective layer 1161 and the second reflective layer 1162 .

The first reflective layer 1161 may be disposed on the first region R1 of the ohmic contact layer 1130 . The first reflective layer 1161 may be disposed on the plurality of first contact holes C1 provided in the ohmic contact layer 1130 .

The second reflective layer 1162 may be disposed on the second region R2 of the ohmic contact layer 1130 . The second reflective layer 1162 may be disposed on the plurality of second contact holes C2 provided in the ohmic contact layer 1130 .

The third reflective layer 1163 may be disposed on the third region R3 of the ohmic contact layer 1130 . The third reflective layer 1163 may be disposed on the plurality of third contact holes C3 provided in the ohmic contact layer 1130 .

The second reflective layer 1162 may include a plurality of openings. For example, the second reflective layer 1162 may include a plurality of first openings h1 . The ohmic contact layer 1130 may be exposed through the plurality of first openings h1 .

Also, the first reflective layer 1161 may include a plurality of second openings h2 . An upper surface of the first conductivity-type semiconductor layer 1111 may be exposed through the plurality of second openings h2 . The plurality of second openings h2 may be provided to correspond to regions of the plurality of mesa openings M formed in the semiconductor structure 1110 . Also, the plurality of second openings h2 may be provided to correspond to regions of the plurality of openings M1 provided in the ohmic contact layer 1130 .

Meanwhile, according to an embodiment, the first reflective layer 1161 may be provided on the first region R1 of the ohmic contact layer 1130 . Also, the first reflective layer 1161 may contact the second conductivity-type semiconductor layer 1113 through the first contact hole C1 provided in the ohmic contact layer 1130 . Accordingly, the adhesive force between the first reflective layer 1161 and the second conductivity-type semiconductor layer 1113 may be improved, and the first reflective layer 1161 may be prevented from being peeled from the ohmic contact layer 1130 . be able to

Also, according to an embodiment, the second reflective layer 1162 may be provided on the second region R2 of the ohmic contact layer 1130 . The second reflective layer 1162 may contact the second conductivity-type semiconductor layer 1113 through the second contact hole C2 provided in the ohmic contact layer 1130 . Accordingly, the adhesive force between the second reflective layer 1162 and the second conductivity-type semiconductor layer 1113 may be improved, and the second reflective layer 1162 may be prevented from being peeled from the ohmic contact layer 1130 . be able to

Also, according to an embodiment, the third reflective layer 1163 may be provided on the third region R3 of the ohmic contact layer 1130 . The third reflective layer 1163 may contact the second conductivity-type semiconductor layer 1113 through the third contact hole C3 provided in the ohmic contact layer 1130 . Accordingly, the adhesion between the third reflective layer 1163 and the second conductivity-type semiconductor layer 1113 may be improved, and the third reflective layer 1163 may be prevented from being peeled from the ohmic contact layer 1130 . be able to

Subsequently, as shown in FIGS. 26A and 26B , a first sub-electrode 1141 and a second sub-electrode 1142 may be formed. 26A is a plan view showing the shapes of the first sub-electrode 1141 and the second sub-electrode 1142 formed according to the method for manufacturing a light emitting device according to an embodiment, and FIG. 26B is a line AA of the light emitting device shown in FIG. 26A. A cross-sectional view of the process is shown.

According to an embodiment, the first sub-electrode 1141 and the second sub-electrode 1142 may be disposed to be spaced apart from each other.

The first sub-electrode 1141 may be electrically connected to the first conductivity-type semiconductor layer 1111 . The first sub-electrode 1141 may be disposed on the first conductivity-type semiconductor layer 1111 . For example, according to the light emitting device 1100 according to the embodiment, the first sub-electrode 1141 is a first sub-electrode 1141 exposed by removing a portion of the second conductivity-type semiconductor layer 1113 and a portion of the active layer 1112 . It may be disposed on the upper surface of the first conductivity type semiconductor layer 1111 .

The first sub-electrode 1141 may be formed, for example, in a linear shape. Also, the first sub-electrode 1141 may include an N region having a relatively larger area than other linear regions. The N region of the first sub-electrode 1141 may be electrically connected to a first bonding part 1171 to be formed later.

The first sub-electrode 1141 may be electrically connected to the upper surface of the first conductivity-type semiconductor layer 1111 through the second opening h2 provided in the first reflective layer 1161 . For example, the first sub-electrode 1141 may directly contact the upper surface of the first conductivity-type semiconductor layer 1111 in the plurality of N regions.

The second sub-electrode 1142 may be electrically connected to the second conductivity-type semiconductor layer 1113 . The second sub-electrode 1142 may be disposed on the second conductivity-type semiconductor layer 1113 . In an embodiment, the ohmic contact layer 1130 may be disposed between the second sub-electrode 1142 and the second conductivity-type semiconductor layer 1113 .

The second sub-electrode 1142 may be formed, for example, in a linear shape. Also, the second sub-electrode 1142 may include a P region having a relatively larger area than other linear regions. The P region of the second sub-electrode 1142 may be electrically connected to a second bonding part 1172 to be formed later.

The second sub-electrode 1142 may be electrically connected to the upper surface of the second conductivity-type semiconductor layer 1113 through the first opening h1 provided in the second reflective layer 1162 . For example, the second sub-electrode 1142 may be electrically connected to the second conductivity-type semiconductor layer 1113 in the plurality of P regions through the ohmic contact layer 1130 . The second sub-electrode 1142 may directly contact the upper surface of the ohmic contact layer 1130 in the plurality of P regions.

Next, as shown in FIGS. 27A and 27B , a protective layer 1150 may be formed. 27A is a plan view showing the shape of the protective layer 1150 formed according to the method of manufacturing a light emitting device according to an embodiment, and FIG. 27B is a cross-sectional view illustrating a process taken along the line A-A of the light emitting device shown in FIG. 27A.

The protective layer 1150 may be disposed on the first sub-electrode 1141 and the second sub-electrode 1142 . The protective layer 1150 may be disposed on the reflective layer 1160 .

The protective layer 1150 may include a fourth opening h4 exposing an upper surface of the first sub-electrode 1141 . The protective layer 1150 may include a plurality of fourth openings h4 exposing the plurality of NB regions of the first sub-electrode 1141 .

The fourth opening h4 may be provided on an area in which the first reflective layer 1161 is disposed. Also, the fourth opening h4 may be provided on the first region R1 of the ohmic contact layer 1130 .

The protective layer 1150 may include a third opening h3 exposing an upper surface of the second sub-electrode 1142 . The protective layer 1150 may include a plurality of third openings h3 exposing the plurality of PB regions of the second sub-electrode 1142 .

The third opening h3 may be provided on an area in which the second reflective layer 1162 is disposed. Also, the third opening h3 may be provided on the second region R2 of the ohmic contact layer 1130 .

Subsequently, as shown in FIGS. 28A and 28B , a first bonding unit 1171 and a second bonding unit 1172 may be formed. 28A is a plan view showing the shapes of the first bonding part 1171 and the second bonding part 1172 formed according to the method of manufacturing a light emitting device according to an embodiment, and FIG. 28B is an AA of the light emitting device shown in FIG. 28A. A cross-sectional view of the process is shown along a line.

According to an embodiment, the first bonding unit 1171 and the second bonding unit 1172 may be formed in the shape shown in FIG. 28A . The first bonding unit 1171 and the second bonding unit 1172 may be disposed on the protective layer 1150 .

The first bonding part 1171 may be disposed on the first reflective layer 1161 . The second bonding part 1172 may be disposed on the second reflective layer 1162 . The second bonding unit 1172 may be disposed to be spaced apart from the first bonding unit 1171 .

The first bonding part 1171 may contact the upper surface of the first sub-electrode 1141 through the fourth opening h4 provided in the passivation layer 1150 in the plurality of NB regions. The second bonding part 1172 may contact the upper surface of the second sub-electrode 1142 through the third opening h3 provided in the passivation layer 1150 in the plurality of PB regions.

According to an embodiment, as power is applied to the first bonding unit 1171 and the second bonding unit 1172 , the semiconductor structure 1110 may emit light.

As described above, according to the light emitting device 1100 according to the embodiment, the first bonding portion 1171 and the first sub-electrode 1141 may contact each other in a plurality of regions. Also, the second bonding part 1172 and the second sub-electrode 1142 may contact each other in a plurality of regions. Accordingly, according to the embodiment, since power can be supplied through a plurality of regions, there is an advantage that a current dispersion effect occurs and an operating voltage can be reduced according to an increase in the contact area and dispersion of the contact region.

Next, another example of a flip-chip light emitting device applied to a light emitting device package according to an embodiment of the present invention will be described with reference to the accompanying drawings.

First, a light emitting device according to an embodiment of the present invention will be described with reference to FIGS. 29 and 30 . 29 is a plan view illustrating an electrode arrangement of a light emitting device applied to a light emitting device package according to an embodiment of the present invention, and FIG. 30 is a cross-sectional view taken along line F-F of the light emitting device shown in FIG.

Meanwhile, for better understanding, in FIG. 29 , only the relative arrangement relationship between the first electrode 127 and the second electrode 128 is conceptually illustrated. The first electrode 127 may include a first bonding part 121 and a first branch electrode 125 . The second electrode 128 may include a second bonding part 122 and a second branch electrode 126 .

Unlike the embodiment in which the flip-chip light emitting device of FIG. 21 is disposed, the ratio of the area of the first and second bonding portions 121 and 122 of the light emitting device 120 to the area of the light emitting structure 123 of the light emitting device 120 . This may be different. When the flip-chip light emitting device shown in FIG. 21 is applied, the ratio between the areas of the first and second bonding portions 121 and 122 and the area of the light emitting structure 123 is the light emitting device 120 shown in FIG. 29 . may be larger than a ratio between the areas of the first and second bonding portions 121 and 122 of the light emitting structure 123 . In the case of the light emitting device 120 shown in FIG. 29, the areas of the first and second bonding parts 121 and 122 are shown in FIG. It may be smaller than that of the light emitting device.

The light emitting device according to the embodiment may include a light emitting structure 123 disposed on a substrate 124 as shown in FIGS. 29 and 30 .

The substrate 124 may be selected from a group including a sapphire substrate (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge. For example, the substrate 124 may be provided as a patterned sapphire substrate (PSS) having a concave-convex pattern formed on an upper surface thereof.

The light emitting structure 123 may include a first conductivity type semiconductor layer 123aa , an active layer 123b , and a second conductivity type semiconductor layer 123c . The active layer 123b may be disposed between the first conductivity-type semiconductor layer 123a and the second conductivity-type semiconductor layer 123c. For example, the active layer 123b may be disposed on the first conductivity type semiconductor layer 123a , and the second conductivity type semiconductor layer 123c may be disposed on the active layer 123b .

According to an embodiment, the first conductivity-type semiconductor layer 123a may be provided as an n-type semiconductor layer, and the second conductivity-type semiconductor layer 123c may be provided as a p-type semiconductor layer. Of course, according to another embodiment, the first conductivity-type semiconductor layer 123a may be provided as a p-type semiconductor layer, and the second conductivity-type semiconductor layer 123c may be provided as an n-type semiconductor layer.

The light emitting device according to the embodiment may include a first electrode 127 and a second electrode 128 as shown in FIGS. 29 and 30 .

The first electrode 127 may include a first bonding part 121 and a first branch electrode 125 . The first electrode 127 may be electrically connected to the second conductivity-type semiconductor layer 123c. The first branch electrode 125 may be disposed to be branched from the first bonding part 121 . The first branched electrode 125 may include a plurality of branched electrodes branched from the first bonding part 121 .

The second electrode 128 may include a second bonding part 122 and a second branch electrode 126 . The second electrode 128 may be electrically connected to the first conductivity-type semiconductor layer 123a. The second branch electrode 126 may be disposed to be branched from the second bonding part 122 . The second branch electrode 126 may include a plurality of branch electrodes branched from the second bonding part 122 .

The first branched electrode 125 and the second branched electrode 126 may be alternately disposed in a finger shape. Power supplied through the first bonding part 121 and the second bonding part 122 by the first branched electrode 125 and the second branched electrode 126 is transmitted to the entire light emitting structure 123 . spread and can be provided.

The first electrode 127 and the second electrode 128 may be formed in a single-layer or multi-layer structure. For example, the first electrode 127 and the second electrode 128 may be ohmic electrodes. For example, the first electrode 127 and the second electrode 128 are ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, and Ni/IrOx/Au/ITO, Ag, Ni , Cr, Ti, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, may be at least one of Hf or an alloy of two or more of these materials.

Meanwhile, a protective layer may be further provided on the light emitting structure 123 . The protective layer may be provided on the upper surface of the light emitting structure 123 . In addition, the protective layer may be provided on a side surface of the light emitting structure 123 . The protective layer may be provided such that the first bonding portion 121 and the second bonding portion 122 are exposed. In addition, the protective layer may be selectively provided on the periphery and the lower surface of the substrate 124 .

For example, the protective layer may be provided with an insulating material. For example, the protective layer is Si _x O _y , SiO _x N _y , Si _x N _y , Al _x O _y It may be formed of at least one material selected from the group comprising:

In the light emitting device according to the embodiment, the light generated in the active layer 123b may be emitted in six directions of the light emitting device. The light generated by the active layer 123b may be emitted in a six-plane direction through the upper surface, the lower surface, and four side surfaces of the light emitting device.

The light emitted to the upper surface of the light emitting device may be incident into the recess (R) region described with reference to FIGS. 1 to 20 .

For reference, the vertical arrangement direction of the light emitting device described with reference to FIGS. 1 to 20 and the vertical arrangement direction of the light emitting device illustrated in FIGS. 29 and 30 are opposite to each other.

As described with reference to FIGS. 1 to 20 , the light emitted between the first bonding part 121 and the second bonding part 122 is the adhesive 130 disposed in the recess (R) region. can be entered into Light emitted in the downward direction of the light emitting device may be diffused by the adhesive 130 , and light extraction efficiency may be improved.

Also, according to an embodiment, the sum of the areas of the first and second bonding parts 121 and 122 may be provided to be less than 10% based on the area of the top surface of the substrate 124 . According to the light emitting device package according to the embodiment, the sum of the areas of the first and second bonding parts 121 and 122 is the sum of the areas of the substrate 124 in order to secure a light emitting area emitted from the light emitting device to increase light extraction efficiency. It may be set to 10% or less based on the upper surface area.

In addition, according to an embodiment, the sum of the areas of the first and second bonding portions 121 and 122 may be 0.7% or more based on the area of the top surface of the substrate 124 . According to the light emitting device package according to the embodiment, the sum of the areas of the first and second bonding parts 121 and 122 is based on the top surface area of the substrate 124 in order to provide a stable bonding force to the mounted light emitting device. may be set to 0.7% or more.

For example, the width of the first bonding part 121 along the long axis of the light emitting device may be several tens of micrometers. The width of the first bonding part 121 may be, for example, 70 micrometers to 90 micrometers. Also, the area of the first bonding part 121 may be several thousand square micrometers.

In addition, the width of the second bonding part 122 along the long axis of the light emitting device may be several tens of micrometers. The width of the second bonding part 122 may be, for example, 70 micrometers to 90 micrometers. Also, the area of the second bonding part 122 may be several thousand square micrometers.

As described above, as the area of the first and second bonding portions 121 and 122 is provided to be small, the amount of light transmitted through the lower surface of the light emitting device 120 may be increased. In addition, the adhesive 130 having good reflective properties may be provided under the light emitting device 120 . Accordingly, the light emitted in the lower direction of the light emitting device 120 is reflected by the adhesive 130 to be effectively emitted in the upper direction of the light emitting device package, and light extraction efficiency can be improved.

On the other hand, the light emitting device package according to the above-described embodiment will be described based on a case in which the first and second bonding portions 121 and 122 are in direct contact with the first and second conductive layers 321 and 322 . became

However, according to another example of the light emitting device package according to the embodiment, a separate conductive component is provided between the first and second bonding portions 121 and 122 and the first and second conductive layers 321 and 322 . may be further disposed.

Next, another example of the light emitting device package according to the embodiment will be described with reference to FIG. 31 .

In the description of the light emitting device package according to the embodiment with reference to FIG. 31 , descriptions of matters overlapping with those described with reference to FIGS. 1 to 30 may be omitted.

The light emitting device package 100 according to the embodiment may include a package body 110 and a light emitting device 120 as shown in FIG. 31 .

The package body 110 may include a first frame 111 and a second frame 112 . The first frame 111 and the second frame 112 may be disposed to be spaced apart from each other.

The package body 110 may include a body 113 . The body 113 may be disposed between the first frame 111 and the second frame 112 . The body 113 may function as a kind of electrode separation line. The body 113 may be referred to as an insulating member.

The body 113 may be disposed on the first frame 111 . Also, the body 113 may be disposed on the second frame 112 .

The body 113 may provide an inclined surface disposed on the first frame 111 and the second frame 112 . A cavity C may be provided on the first frame 111 and the second frame 112 by the inclined surface of the body 113 .

According to an embodiment, the package body 110 may be provided in a structure having a cavity (C) or may be provided in a structure having a flat top surface without the cavity (C).

For example, the body 113 may include polyphthalamide (PPA: Polyphthalamide), PCT (Polychloro Triphenyl), LCP (Liquid Crystal Polymer), PA9T (Polyamide9T), silicone, epoxy molding compound (EMC), It may be formed of at least one selected from a group including a silicon molding compound (SMC), ceramic, photo sensitive glass (PSG), and sapphire (Al ₂ O ₃ ). Also, the body 113 may include a high refractive filler such as TiO ₂ and SiO ₂ .

According to an embodiment, the light emitting device 120 may include a first bonding unit 121 , a second bonding unit 122 , a light emitting structure 123 , and a substrate 124 .

As shown in FIG. 31 , the light emitting device 120 may include the light emitting structure 123 disposed under the substrate 124 . The first bonding unit 121 and the second bonding unit 122 may be disposed between the light emitting structure 123 and the body 113 .

The light emitting structure 123 may include a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer. The first bonding part 121 may be electrically connected to the first conductivity-type semiconductor layer. In addition, the second bonding part 122 may be electrically connected to the second conductivity type semiconductor layer.

The light emitting device 120 may be disposed on the package body 110 . The light emitting device 120 may be disposed on the first frame 111 and the second frame 112 . The light emitting device 120 may be disposed in the cavity C provided by the package body 110 .

The package body 110 may include a first opening TH1 and a second opening TH2 penetrating from an upper surface to a lower surface in the first direction. The first frame 111 may include the first opening TH1 . The second frame 112 may include the second opening TH2 .

The first opening TH1 may be provided in the first frame 111 . The first opening TH1 may be provided through the first frame 111 . The first opening TH1 may be provided through the upper and lower surfaces of the first frame 111 in the first direction.

The first opening TH1 may be disposed under the first bonding portion 121 of the light emitting device 120 . The first opening TH1 may be provided to overlap the first bonding portion 121 of the light emitting device 120 . The first opening TH1 may be provided to overlap the first bonding portion 121 of the light emitting device 120 in a first direction from an upper surface to a lower surface of the first frame 111 .

The second opening TH2 may be provided in the second frame 112 . The second opening TH2 may be provided through the second frame 112 . The second opening TH2 may be provided through the upper and lower surfaces of the second frame 112 in the first direction.

The second opening TH2 may be disposed under the second bonding portion 122 of the light emitting device 120 . The second opening TH2 may be provided to overlap the second bonding portion 122 of the light emitting device 120 . The second opening TH2 may be provided to overlap the second bonding portion 122 of the light emitting device 120 in a first direction from an upper surface to a lower surface of the second frame 112 .

The first opening TH1 and the second opening TH2 may be spaced apart from each other. The first opening TH1 and the second opening TH2 may be disposed to be spaced apart from each other under the lower surface of the light emitting device 120 .

According to an embodiment, in order to improve the light extraction efficiency, the size of the first and second bonding portions 121 and 122 of the light emitting device 120 may be arranged smaller than that of the light emitting device 120 shown in FIG. 21 . . The width W1 of the upper region of the first opening TH1 may be smaller than or equal to the width of the first bonding portion 121 . In addition, the width of the upper region of the second opening TH2 may be smaller than or equal to the width of the second bonding portion 122 .

Also, the width W1 of the upper region of the first opening TH1 may be smaller than or equal to the width W2 of the lower region of the first opening TH1. Also, the width of the upper region of the second opening TH2 may be smaller than or equal to the width of the lower region of the second opening TH2 .

For example, the width W1 of the upper region of the first opening TH1 may be several tens of micrometers to several hundred micrometers. Also, the width W2 of the lower region of the first opening TH1 may be tens of micrometers to several hundreds of micrometers greater than the width W1 of the upper region of the first opening TH1.

In addition, the width of the upper region of the second opening TH2 may be several tens of micrometers to several hundred micrometers. Also, the width of the lower region of the second opening TH2 may be tens of micrometers to several hundreds of micrometers greater than the width of the upper region of the second opening TH2.

Also, the width W2 of the lower region of the first opening TH1 may be wider than the width W1 of the upper region of the first opening TH1 . The first opening TH1 may be provided with a constant width by a predetermined depth in the upper region, and may be provided in an inclined shape toward the lower region.

In addition, the width of the lower region of the second opening TH2 may be wider than the width of the upper region of the second opening TH2 . The second opening TH2 may be provided with a constant width by a predetermined depth in the upper area, and may be provided in an inclined shape toward the lower area.

For example, the first opening TH1 may be provided in an inclined shape in which the width gradually decreases from the lower region to the upper region. Also, the second opening TH2 may be provided in an inclined shape in which the width gradually decreases from the lower region to the upper region.

However, the present invention is not limited thereto, and the inclined surfaces between the upper and lower regions of the first and second openings TH1 and TH2 may have a plurality of inclined surfaces having different inclinations, and the inclined surfaces may be disposed with curvature. .

The light emitting device package according to the embodiment may include a first conductor 221 and a second conductor 222 as shown in FIG. 31 . In addition, the light emitting device package according to the embodiment may include a first conductive layer 321 and a second conductive layer 322 . The first conductive layer 321 may be disposed to be spaced apart from the second conductive layer 322 .

The first conductor 221 may be disposed under the first bonding part 121 . The first conductor 221 may be electrically connected to the first bonding part 121 . The first conductor 221 may be disposed to overlap the first bonding portion 121 in the first direction.

The first conductor 221 may be provided in the first opening TH1 . The first conductor 221 may be disposed between the first bonding part 121 and the first conductive layer 321 . The first conductor 221 may be electrically connected to the first bonding part 121 and the first conductive layer 321 .

A lower surface of the first conductor 221 may be lower than an upper surface of the first opening TH1 . A lower surface of the first conductor 221 may be lower than an upper surface of the first conductive layer 321 .

The first conductor 221 may be disposed on the first opening TH1 . Also, the first conductor 221 may be disposed to extend from the first bonding part 121 to the inside of the first opening TH1 .

Also, the second conductor 222 may be disposed under the second bonding part 122 . The second conductor 222 may be electrically connected to the second bonding part 122 . The second conductor 222 may be disposed to overlap the second bonding portion 122 in the first direction.

The second conductor 222 may be provided in the second opening TH2 . The second conductor 222 may be disposed between the second bonding part 122 and the second conductive layer 322 . The second conductor 222 may be electrically connected to the second bonding part 122 and the second conductive layer 322 .

A lower surface of the second conductor 222 may be lower than an upper surface of the second opening TH2 . A lower surface of the second conductor 222 may be disposed lower than an upper surface of the second conductive layer 322 .

The second conductor 222 may be disposed on the second opening TH2 . In addition, the second conductor 222 may be disposed to extend from the second bonding part 122 to the inside of the second opening TH2 .

According to an embodiment, the first conductive layer 321 may be disposed on a lower surface and a side surface of the first conductor 221 . The first conductive layer 321 may be disposed in direct contact with a lower surface and a side surface of the first conductor 221 .

The first conductive layer 321 may be provided in the first opening TH1 . The first conductive layer 321 may be disposed under the first bonding part 121 . A width of the first conductive layer 321 may be greater than a width of the first bonding portion 121 .

As described above, according to the light emitting device package according to the embodiment, an electrical coupling between the first conductive layer 321 and the first bonding part 121 may be more stably provided by the first conductor 221 . .

Also, according to an embodiment, the second conductive layer 322 may be disposed on a lower surface and a side surface of the second conductor 222 . The second conductive layer 322 may be disposed in direct contact with the lower surface and side surfaces of the second conductor 222 .

The second conductive layer 322 may be provided in the second opening TH2 . The second conductive layer 322 may be disposed under the second bonding part 122 . A width of the second conductive layer 322 may be greater than a width of the second bonding portion 122 .

As described above, according to the light emitting device package 200 according to the embodiment, the electrical coupling between the second conductive layer 322 and the second bonding part 122 is more stably provided by the second conductor 222 . can be

For example, the first and second conductors 221 and 222 may be stably bonded to the first and second bonding portions 121 and 122 through separate bonding materials, respectively. In addition, side surfaces and lower surfaces of the first and second conductors 221 and 222 may contact the first and second conductive layers 321 and 322 , respectively.

Accordingly, compared to the case in which the first and second conductive layers 321 and 322 directly contact the lower surfaces of the first and second bonding portions 121 and 122, respectively, the first and second conductive layers 321 , 322 may contact the first and second conductors 221 and 222, respectively, to increase.

Accordingly, power is stably supplied from the first and second conductive layers 321 and 322 to the first and second bonding units 121 and 122 through the first and second conductors 221 and 222, respectively. can be supplied with

The first conductive layer 321 and the second conductive layer 322 may include one material selected from the group consisting of Ag, Au, Pt, or the like or an alloy thereof. However, the present invention is not limited thereto, and a material capable of securing a conductive function may be used as the first conductive layer 321 and the second conductive layer 322 .

For example, the first conductive layer 321 and the second conductive layer 322 may be formed using a conductive paste. The conductive paste may include solder paste, silver paste, or the like, and may be configured as a multi-layer made of different materials or a multi-layer or a single layer made of an alloy.

In addition, the first and second conductors 221 and 222 may include one material selected from the group consisting of Ag, Au, Pt, Al, or the like or an alloy thereof. However, the present invention is not limited thereto, and a material capable of securing a conductive function may be used as the first and second conductors 221 and 222 .

In addition, the light emitting device package according to the embodiment may include an adhesive 130 .

The adhesive 130 may be disposed between the package body 110 and the light emitting device 120 . The adhesive 130 may be disposed between the upper surface of the package body 110 and the lower surface of the light emitting device 120 . The adhesive 130 may be disposed between the upper surface of the body 113 and the lower surface of the light emitting device 120 .

In addition, the light emitting device package 100 according to the embodiment may include a recess R as shown in FIG. 31 .

The recess R may be provided in the body 113 . The recess R may be provided between the first opening TH1 and the second opening TH2. The recess (R) may be provided to be concave in the direction from the upper surface to the lower surface of the body (113). The recess R may be disposed under the light emitting device 120 . The recess R may be provided to overlap the light emitting device 120 in the first direction.

For example, the adhesive 130 may be disposed in the recess (R). The adhesive 130 may be disposed between the light emitting device 120 and the body 113 . The adhesive 130 may be disposed between the first bonding unit 121 and the second bonding unit 122 . For example, the adhesive 130 may be disposed in contact with a side surface of the first bonding unit 121 and a side surface of the second bonding unit 122 .

In addition, the adhesive 130 may be provided between the light emitting device 120 and the package body 110 . The adhesive 130 may be disposed between the light emitting device 120 and the first frame 111 . The adhesive 130 may be disposed between the light emitting device 120 and the second frame 112 .

The adhesive 130 may provide a stable fixing force between the light emitting device 120 and the package body 110 . The adhesive 130 may provide a stable fixing force between the light emitting device 120 and the body 113 . The adhesive 130 may be disposed in direct contact with the upper surface of the body 113 , for example. In addition, the adhesive 130 may be disposed in direct contact with the lower surface of the light emitting device 120 .

For example, the adhesive 130 may include at least one of an epoxy-based material, a silicone-based material, and a hybrid material including an epoxy-based material and a silicone-based material. . Also, as an example, when the adhesive 130 includes a reflective function, the adhesive may include white silicone.

The adhesive 130 may provide a stable fixing force between the body 113 and the light emitting device 120 , and when light is emitted to a lower surface of the light emitting device 120 , the light emitting device 120 and the light emitting device 120 . A light diffusion function may be provided between the body 113 . When light is emitted from the light emitting device 120 to the lower surface of the light emitting device 120 , the adhesive 130 provides a light diffusion function, thereby improving the light extraction efficiency of the light emitting device package 100 .

In addition, the adhesive 130 may reflect light emitted from the light emitting device 120 . When the adhesive 130 includes a reflective function, the adhesive 130 may be made of a material including TiO ₂ , Silicone, and the like.

In some embodiments, a depth T1 of the recess R may be smaller than a depth T2 of the first opening TH1 or a depth T2 of the second opening TH2.

The depth T1 of the recess R may be determined in consideration of the adhesive force of the adhesive 130 . In addition, the recess R has a depth T1 in consideration of the stable strength of the body 113 and/or cracks in the light emitting device package 100 by heat emitted from the light emitting device 120 . ) can be determined not to occur.

The recess R may provide an appropriate space under the light emitting device 120 in which a kind of underfill process may be performed. Here, the under fill process may be a process of mounting the light emitting device 120 on the package body 110 and then disposing the adhesive 130 under the light emitting device 120 , and the light emitting device ( 120) may be a process of disposing the light emitting device 120 after disposing the adhesive 130 in the recess R in order to be mounted through the adhesive 130 in the process of mounting the package body 110 have.

The depth T1 and the width W4 of the recess R may affect the formation position and fixing force of the adhesive 130 . A depth T1 and a width W4 of the recess R may be determined to provide sufficient fixing force by the adhesive 130 disposed between the body 113 and the light emitting device 120 . .

For example, the depth T1 of the recess R may be several tens of micrometers. The depth T1 of the recess R may be 40 micrometers to 60 micrometers.

In addition, the width W4 of the recess R may be provided in a range of several tens of micrometers to several hundreds of micrometers. Here, the width W4 of the recess R may be provided in the long axis direction of the light emitting device 120 .

A width W4 of the recess R may be provided to be narrower than a gap between the first bonding portion 121 and the second bonding portion 122 . The width W4 of the recess R may be several hundred micrometers larger than the width or diameter of the first and second bonding portions 121 and 122 . For example, the width W4 of the recess R may be 300 micrometers to 400 micrometers.

A depth T2 of the first opening TH1 may be provided to correspond to a thickness of the first frame 111 . A depth T2 of the first opening TH1 may be provided to have a thickness capable of maintaining a stable strength of the first frame 111 .

A depth T2 of the second opening TH2 may be provided to correspond to a thickness of the second frame 112 . A depth T2 of the second opening TH2 may be provided to a thickness capable of maintaining a stable strength of the second frame 112 .

A depth T2 of the first opening TH1 and a depth T2 of the second opening TH2 may be provided to correspond to the thickness of the body 113 . A depth T2 of the first opening TH1 and a depth T2 of the second opening TH2 may be provided to have a thickness capable of maintaining a stable strength of the body 113 .

For example, the depth T2 of the first opening TH1 may be several hundreds of micrometers. A depth T2 of the first opening TH1 may be 180 micrometers to 220 micrometers. For example, the depth T2 of the first opening TH1 may be 200 micrometers.

For example, the thickness of (T2-T1) may be selected to be at least 100 micrometers or more. This is in consideration of the thickness of the injection process that can provide crack free (crack free) of the body (113).

According to an embodiment, the ratio (T2/T1) of the thickness T1 to the thickness T2 may be 2 to 10. For example, when the thickness of T2 is provided as 200 micrometers, the thickness of T1 may be provided as 20 micrometers to 100 micrometers.

Also, according to an embodiment, the sum of the areas of the first and second bonding parts 121 and 122 may be provided to be less than 10% based on the area of the top surface of the substrate 124 . According to the light emitting device package according to the embodiment, the sum of the areas of the first and second bonding parts 121 and 122 is the sum of the areas of the substrate 124 in order to secure a light emitting area emitted from the light emitting device to increase light extraction efficiency. It may be set to 10% or less based on the upper surface area.

In addition, according to an embodiment, the sum of the areas of the first and second bonding portions 121 and 122 may be 0.7% or more based on the area of the top surface of the substrate 124 . According to the light emitting device package according to the embodiment, the sum of the areas of the first and second bonding parts 121 and 122 is based on the top surface area of the substrate 124 in order to provide a stable bonding force to the mounted light emitting device. may be set to 0.7% or more.

In addition, according to the light emitting device package according to the embodiment, the area of the first and second bonding parts 121 and 122 so that the first conductor 221 and the second conductor 222 can be stably disposed. The sum of may be set to 0.7% or more based on the area of the top surface of the substrate 124 .

According to an embodiment, the overlapping area of the adhesive 130 with the light emitting device 120 in the first direction is the first and second openings TH1 and TH2 and the first and second bonding portions. (121, 122) may be provided larger than the area of the overlapping region.

As described above, as the area of the first and second bonding portions 121 and 122 is provided to be small, the amount of light transmitted through the lower surface of the light emitting device 120 may be increased. In addition, the adhesive 130 having good reflective properties may be provided under the light emitting device 120 . Accordingly, the light emitted in the lower direction of the light emitting device 120 is reflected by the adhesive 130 to be effectively emitted in the upper direction of the light emitting device package 100, and light extraction efficiency can be improved.

In addition, the light emitting device package according to the embodiment may include a molding unit 140 as shown in FIG. 31 .

The molding part 140 may be provided on the light emitting device 120 . The molding unit 140 may be disposed on the first frame 111 and the second frame 112 . The molding part 140 may be disposed in the cavity C provided by the package body 110 .

The molding part 140 may include an insulating material. In addition, the molding unit 140 may include a wavelength conversion unit that receives the light emitted from the light emitting device 120 and provides wavelength-converted light. For example, the molding unit 140 may include at least one selected from the group consisting of a phosphor, a quantum dot, and the like.

Also, as shown in FIG. 31 , the light emitting device package according to the embodiment may include a first upper recess R3 and a second upper recess R4 .

The first upper recess R3 may be provided on an upper surface of the first frame 111 . The first upper recess R3 may be provided to be concave in a direction from an upper surface to a lower surface of the first frame 111 . The first upper recess R3 may be spaced apart from the first opening TH1.

The second upper recess R4 may be provided on the upper surface of the second frame 112 . The second upper recess R4 may be provided to be concave in a direction from an upper surface to a lower surface of the second frame 112 . The second upper recess R4 may be spaced apart from the second opening TH2.

For example, the first upper recess R3 and the second upper recess R4 may have a width of several tens of micrometers to several hundred micrometers.

In addition, the light emitting device package according to the embodiment may include a resin part 135 as shown in FIG. 31 .

The resin part 135 may be disposed between the first frame 111 and the light emitting device 120 . The resin part 135 may be disposed between the second frame 112 and the light emitting device 120 . The resin part 135 may be provided on the bottom surface of the cavity C provided in the package body 110 .

The resin part 135 may be provided in the first upper recess R3 and the second upper recess R4 .

The resin part 135 may be disposed on a side surface of the first bonding part 121 . The resin part 135 may be provided in the first upper recess R3 , and may extend to an area where the first bonding part 121 is disposed. The resin part 135 may be disposed under the light emitting structure 123 .

Also, the resin part 135 may be disposed on a side surface of the second bonding part 122 . The resin part 135 may be provided in the second upper recess R4 , and may extend to an area where the second bonding part 122 is disposed. The resin part 135 may be disposed under the light emitting structure 123 .

Also, in the light emitting device package according to the embodiment, when viewed from the top, a partial region of the first upper recess R3 may be provided to overlap the light emitting structure 123 in a vertical direction. For example, a side area of the first upper recess R3 adjacent to the first bonding part 121 may extend under the light emitting structure 123 .

Also, in the light emitting device package according to the embodiment, when viewed from an upper direction, a partial region of the second upper recess R4 may be provided to overlap the light emitting structure 123 in a vertical direction. For example, a side area of the second upper recess R4 adjacent to the second bonding part 122 may extend under the light emitting structure 123 .

In addition, the first upper recess R3 and the second upper recess R4 may provide sufficient space for the resin part 135 to be provided under the light emitting device 120 . The first upper recess R3 and the second upper recess R4 may provide an appropriate space in which a kind of underfill process may be performed under the light emitting device 120 .

Accordingly, the resin part 135 filled in the first upper recess R3 and the second upper recess R4 moves around the first bonding part 121 and the second bonding part 122 . can be effectively sealed.

For example, the resin part 135 may include at least one of an epoxy-based material, a silicone-based material, and a hybrid material including an epoxy-based material and a silicone-based material. have. In addition, the resin part 135 may be a reflective part that reflects the light emitted from the light emitting device 120 , for example, may be a resin including a reflective material such as TiO ₂ , or may be made of white silicone. may include

The resin part 135 may be disposed under the light emitting device 120 to perform a sealing function. In addition, the resin part 135 may improve adhesion between the light emitting device 120 and the first frame 111 . The resin part 135 may improve adhesion between the light emitting device 120 and the second frame 112 .

The resin part 135 may seal the periphery of the first bonding part 121 and the second bonding part 122 . In the resin part 135 , the first conductive layer 321 and the second conductive layer 322 leave the first opening TH1 region and the second opening TH2 region in the light emitting device 120 . It can be prevented from spreading and moving in the direction of the outer surface.

When the first and second conductive layers 321 and 322 diffuse and move toward the outer surface of the light emitting device 120 , the first and second conductive layers 321 and 322 are formed between the active layer of the light emitting device 120 and It may come into contact with it and cause a defect due to a short circuit. Accordingly, when the resin part 135 is disposed, it is possible to prevent a short circuit between the first and second conductive layers 321 and 322 and the active layer, thereby improving the reliability of the light emitting device package according to the embodiment.

In addition, according to an embodiment, a protective layer may be provided on the lower surface and the circumference of the light emitting device 120 . In this case, since an insulating protective layer is provided on the surface of the active layer, even when the first and second conductive layers 321 and 322 are diffused and moved toward the outer surface of the light emitting device 120, the light emission It is possible to prevent the first and second conductive layers 321 and 322 from being electrically connected to the active layer of the device 120 .

On the other hand, even when the insulating protective layer is disposed on the lower surface and the circumference of the light emitting device 120, there may be cases in which the insulating protective layer is not disposed on the upper side of the light emitting device 120 or around the substrate 124. can At this time, when the substrate 124 is provided with a conductive material, when the first and second conductive layers 321 and 322 come into contact with the upper side surface of the light emitting device 120 or the substrate 124, a short circuit Defects may occur. Therefore, when the resin part 135 is disposed, it is possible to prevent a short circuit between the first and second conductive layers 321 and 322 and the upper side surface of the light emitting device 120 or the substrate 124, in an embodiment. Accordingly, the reliability of the light emitting device package may be improved.

In addition, when the resin part 135 includes a material having a reflective characteristic, such as white silicon, the resin part 135 transmits the light provided from the light emitting device 120 in the upper direction of the package body 110 . It is possible to improve the light extraction efficiency of the light emitting device package 100 by reflecting it.

On the other hand, according to another example of the light emitting device package according to the embodiment of the present invention, the resin part 135 is not provided separately, and the molding part 140 is formed between the first frame 111 and the second frame ( 112) may be arranged to be in direct contact.

In the light emitting device package according to the embodiment, power is connected to the first bonding unit 121 through the first opening TH1 region, and the second bonding unit 122 through the second opening TH2 region. may be connected to power.

Accordingly, the light emitting device 120 can be driven by the driving power supplied through the first bonding unit 121 and the second bonding unit 122 . In addition, the light emitted from the light emitting device 120 can be provided in an upper direction of the package body 110 .

On the other hand, the light emitting device package 200 according to the above-described embodiment may be supplied by being mounted on a sub-mount or a circuit board.

However, when a conventional light emitting device package is mounted on a sub-mount or a circuit board, a high-temperature process such as reflow may be applied. In this case, in the reflow process, a re-melting phenomenon occurs in the bonding region between the light emitting device and the lead frame provided in the light emitting device package, so that the stability of electrical connection and physical bonding may be weakened.

However, according to the light emitting device package and the light emitting device package manufacturing method according to the embodiment, the first bonding part and the second bonding part of the light emitting device according to the embodiment may receive driving power through the conductive layer disposed in the opening. In addition, the melting point of the conductive layer disposed in the opening may be selected to have a higher value than that of a general bonding material.

Therefore, since the light emitting device package according to the embodiment does not cause a re-melting phenomenon even when bonding to the main board or the like through a reflow process, the electrical connection and physical bonding force are not deteriorated. have.

In addition, according to the light emitting device package and the light emitting device package manufacturing method according to the embodiment, the package body 110 does not need to be exposed to high temperature in the process of manufacturing the light emitting device package. Therefore, according to the embodiment, it is possible to prevent the package body 110 from being damaged or discolored by exposure to high temperature.

Accordingly, the selection range for materials constituting the body 113 can be widened. According to an embodiment, the body 113 may be provided using not only an expensive material such as ceramic, but also a relatively inexpensive resin material.

For example, the body 113 includes at least one material selected from the group consisting of PPA (PolyPhtalAmide) resin, PCT (PolyCyclohexylenedimethylene Terephthalate) resin, EMC (Epoxy Molding Compound) resin, and SMC (Silicone Molding Compound) resin. can do.

Also, according to an embodiment, the sum of the areas of the first and second pad electrodes 121 and 122 may be provided to be 10% or less based on the area of the top surface of the substrate 124 . According to the light emitting device package according to the embodiment, in order to secure a light emitting area emitted from the light emitting device to increase light extraction efficiency, the sum of the areas of the first and second bonding portions 121 and 122 is the sum of the areas of the substrate 124 . It may be set to 10% or less based on the upper surface area.

In addition, according to an embodiment, the sum of the areas of the first and second bonding portions 121 and 122 may be 0.7% or more based on the area of the top surface of the substrate 124 . According to the light emitting device package according to the embodiment, the sum of the areas of the first and second bonding parts 121 and 122 is based on the top surface area of the substrate 124 in order to provide a stable bonding force to the mounted light emitting device. may be set to 0.7% or more.

In addition, according to the light emitting device package according to the embodiment, the area of the first and second bonding parts 121 and 122 so that the first conductor 221 and the second conductor 222 can be stably disposed. The sum of may be set to 0.7% or more based on the area of the top surface of the substrate 124 .

According to an embodiment, the overlapping area of the adhesive 130 with the light emitting device 120 in the first direction is the first and second openings TH1 and TH2 and the first and second bonding portions. (121, 122) may be provided larger than the area of the overlapping region.

As described above, as the area of the first and second bonding portions 121 and 122 is provided to be small, the amount of light transmitted through the lower surface of the light emitting device 120 may be increased. In addition, the adhesive 130 having good reflective properties may be provided under the light emitting device 120 . Accordingly, the light emitted in the lower direction of the light emitting device 120 is reflected by the adhesive 130 to be effectively emitted in the upper direction of the light emitting device package 100, and light extraction efficiency can be improved.

Next, another example of the light emitting device package according to the embodiment will be described with reference to FIG. 32 .

In describing the light emitting device package according to the embodiment with reference to FIG. 32 , descriptions of matters overlapping with those described with reference to FIGS. 1 to 31 may be omitted.

The light emitting device package according to the embodiment may include a package body 110 and a light emitting device 120 .

The package body 110 may include a first frame 111 and a second frame 112 . The first frame 111 and the second frame 112 may be disposed to be spaced apart from each other.

The package body 110 may include a body 113 . The body 113 may be disposed between the first frame 111 and the second frame 112 . The body 113 may function as a kind of electrode separation line. The body 113 may be referred to as an insulating member.

The body 113 may be disposed on the first frame 111 . Also, the body 113 may be disposed on the second frame 112 .

The body 113 may provide an inclined surface disposed on the first frame 111 and the second frame 112 . A cavity C may be provided on the first frame 111 and the second frame 112 by the inclined surface of the body 113 .

According to an embodiment, the package body 110 may be provided in a structure having a cavity (C) or may be provided in a structure having a flat top surface without the cavity (C).

For example, the body 113 may include polyphthalamide (PPA: Polyphthalamide), PCT (Polychloro Triphenyl), LCP (Liquid Crystal Polymer), PA9T (Polyamide9T), silicone, epoxy molding compound (EMC), It may be formed of at least one selected from a group including a silicon molding compound (SMC), ceramic, photo sensitive glass (PSG), and sapphire (Al ₂ O ₃ ). Also, the body 113 may include a high refractive filler such as TiO ₂ and SiO ₂ .

The first frame 111 and the second frame 112 may be provided as insulating frames. The first frame 111 and the second frame 112 may stably provide structural strength of the package body 110 .

In addition, the first frame 111 and the second frame 112 may be provided as conductive frames. The first frame 111 and the second frame 112 may stably provide structural strength of the package body 110 and may be electrically connected to the light emitting device 120 .

According to an embodiment, the light emitting device 120 may include a first bonding unit 121 , a second bonding unit 122 , a light emitting structure 123 , and a substrate 124 .

As shown in FIG. 32 , the light emitting device 120 may include the light emitting structure 123 disposed under the substrate 124 . The first bonding unit 121 and the second bonding unit 122 may be disposed between the light emitting structure 123 and the package body 110 .

The first bonding part 121 may be disposed on a lower surface of the light emitting device 120 . The second bonding part 122 may be disposed on the lower surface of the light emitting device 120 . The first bonding unit 121 and the second bonding unit 122 may be disposed to be spaced apart from each other on the lower surface of the light emitting device 120 .

The first bonding part 121 may be disposed on the first frame 111 . The second bonding part 122 may be disposed on the second frame 112 .

The first bonding part 121 may be disposed between the light emitting structure 123 and the first frame 111 . The second bonding part 122 may be disposed between the light emitting structure 123 and the second frame 112 .

Meanwhile, the light emitting device package according to the embodiment may include a first opening TH1 and a second opening TH2 as shown in FIG. 32 . The first frame 111 may include the first opening TH1. The second frame 112 may include the second opening TH2 .

The first opening TH1 may be provided in the first frame 111 . The first opening TH1 may be provided through the first frame 111 . The first opening TH1 may be provided through the upper and lower surfaces of the first frame 111 in the first direction.

The first opening TH1 may be disposed under the first bonding portion 121 of the light emitting device 120 . The first opening TH1 may be provided to overlap the first bonding portion 121 of the light emitting device 120 in a first direction from an upper surface to a lower surface of the first frame 111 .

The second opening TH2 may be provided in the second frame 112 . The second opening TH2 may be provided through the second frame 112 . The second opening TH2 may be provided through the upper and lower surfaces of the second frame 112 in the first direction.

The second opening TH2 may be disposed under the second bonding portion 122 of the light emitting device 120 . The second opening TH2 may be provided to overlap the second bonding portion 122 of the light emitting device 120 in a first direction from an upper surface to a lower surface of the second frame 112 .

The first opening TH1 and the second opening TH2 may be spaced apart from each other. The first opening TH1 and the second opening TH2 may be disposed to be spaced apart from each other under the lower surface of the light emitting device 120 .

In the light emitting device package shown in FIG. 32 , in the process of forming the first and second openings TH1 and TH2, etching is performed in the upper surface direction and the lower surface direction of the first and second lead frames 111 and 112, respectively. case is indicated.

As etching proceeds in the upper and lower directions of the first and second lead frames 111 and 112, respectively, the shapes of the first and second openings TH1 and TH2 may be provided as a kind of snowman shape. .

The widths of the first and second openings TH1 and TH2 may gradually increase from the lower region to the middle region and then decrease again. Also, the width may be gradually increased and then decreased again while going back to the upper region from the reduced width of the middle region.

The first and second openings TH1 and TH2 may include a first region disposed on an upper surface of each of the first and second frames 111 and 112 , and a lower surface of each of the first and second frames 111 and 112 . It may include a second region disposed on the . A width of an upper surface of the first region may be smaller than a width of a lower surface of the second region.

In addition, the width of the lower region of the first opening TH1 may be wider than the width of the upper region of the first opening TH1 . The first opening TH1 may include a first area provided with a constant width by a predetermined depth from the upper area, and a second area provided with an inclined shape toward the lower area. In addition, the first region and the second region may have a circular shape having a side surface having a curvature, and a width of an upper surface of the first region may be narrower than a width of a lower surface of the second region. In addition, a portion in which the first region and the second region contact may have a bent portion.

Also, according to an embodiment, after the etching process for forming the first and second openings TH1 and TH2 is completed, a plating process for the first and second frames 111 and 112 may be performed. Accordingly, first and second plating layers 111a and 112a may be formed on the surfaces of the first and second frames 111 and 112 .

The first and second plating layers 111a and 112a may be provided on upper and lower surfaces of the first and second frames 111 and 112 . Also, the first and second plating layers 111a and 112a may be provided in boundary regions in contact with the first and second openings TH1 and TH2.

For example, the first and second frames 111 and 112 may be provided with a Cu layer as a basic support member. In addition, the first and second plating layers 111a and 112a may include at least one of a Ni layer, an Ag layer, and the like.

When the first and second plating layers 111a and 112a include a Ni layer, the Ni layer has a small change in thermal expansion, so even if the size or arrangement position of the package body is changed by thermal expansion, The position of the light emitting device disposed thereon can be stably fixed by the Ni layer. When the first and second plating layers 111a and 112a include an Ag layer, the Ag layer may efficiently reflect light emitted from the light emitting device disposed thereon and improve luminosity.

According to an embodiment, when the first and second bonding portions 121 and 122 of the light emitting device 120 are arranged to be small in size to improve the light extraction efficiency, the upper region of the first opening TH1 is The width may be greater than or equal to the width of the first bonding portion 121 . In addition, the width of the upper region of the second opening TH2 may be greater than or equal to the width of the second bonding portion 122 .

In addition, the width of the upper region of the first opening TH1 may be smaller than or equal to the width of the lower region of the first opening TH1 . Also, the width of the upper region of the second opening TH2 may be smaller than or equal to the width of the lower region of the second opening TH2 .

For example, the width of the upper region of the first opening TH1 may be several tens of micrometers to several hundred micrometers. In addition, the width of the lower region of the first opening TH1 may be tens of micrometers to several hundreds of micrometers greater than the width of the upper region of the first opening TH1 .

In addition, the width of the upper region of the second opening TH2 may be several tens of micrometers to several hundred micrometers. Also, the width of the lower region of the second opening TH2 may be tens of micrometers to several hundreds of micrometers greater than the width of the upper region of the second opening TH2.

In addition, the width of the lower region of the first opening TH1 may be wider than the width of the upper region of the first opening TH1 . The first opening TH1 may be provided with a constant width by a predetermined depth in the upper region, and may be provided in an inclined shape toward the lower region.

In addition, the width of the lower region of the second opening TH2 may be wider than the width of the upper region of the second opening TH2 . The second opening TH2 may be provided with a constant width by a predetermined depth in the upper area, and may be provided in an inclined shape toward the lower area.

For example, the first opening TH1 may be provided in an inclined shape in which the width gradually decreases from the lower region to the upper region. Also, the second opening TH2 may be provided in an inclined shape in which the width gradually decreases from the lower region to the upper region.

However, the present invention is not limited thereto, and the inclined surfaces between the upper and lower regions of the first and second openings TH1 and TH2 may have a plurality of inclined surfaces having different inclinations, and the inclined surfaces may be disposed with curvature. .

In the light emitting device package according to the embodiment, as shown in FIG. 32 , when the areas of the first and second bonding portions 121 and 122 are small, the first and second bonding portions 121 and 122 are It may be disposed in the first and second openings TH1 and TH2.

In this case, since the area of the first and second bonding portions 121 and 122 is small, the adhesive force between the first and second conductive layers 321 and 322 and the first and second bonding portions 121 and 122 is small. This can be difficult to obtain. Accordingly, in the light emitting device package according to the embodiment, in order to further secure a contact area between the first and second conductive layers 321 and 322 and the first and second bonding portions 121 and 122 , the first conductor 221 . ) and a second conductor 222 .

In addition, the light emitting device package according to the embodiment may include a first conductive layer 321 and a second conductive layer 322 . The first conductive layer 321 may be disposed to be spaced apart from the second conductive layer 322 .

The first conductor 221 may be disposed under the first bonding part 121 . The first conductor 221 may be electrically connected to the first bonding part 121 . The first conductor 221 may be disposed to overlap the first bonding portion 121 in the first direction.

The first conductor 221 may be provided in the first opening TH1 . The first conductor 221 may be disposed between the first bonding part 121 and the first conductive layer 321 . The first conductor 221 may be electrically connected to the first bonding part 121 and the first conductive layer 321 .

A lower surface of the first conductor 221 may be lower than an upper surface of the first opening TH1 . A lower surface of the first conductor 221 may be lower than an upper surface of the first conductive layer 321 .

The first conductor 221 may be disposed on the first opening TH1 . Also, the first conductor 221 may be disposed to extend from the first bonding part 121 to the inside of the first opening TH1 .

Also, the second conductor 222 may be disposed under the second bonding part 122 . The second conductor 222 may be electrically connected to the second bonding part 122 . The second conductor 222 may be disposed to overlap the second bonding portion 122 in the first direction.

The second conductor 222 may be provided in the second opening TH2 . The second conductor 222 may be disposed between the second bonding part 122 and the second conductive layer 322 . The second conductor 222 may be electrically connected to the second bonding part 122 and the second conductive layer 322 .

A lower surface of the second conductor 222 may be lower than an upper surface of the second opening TH2 . A lower surface of the second conductor 222 may be disposed lower than an upper surface of the second conductive layer 322 .

The second conductor 222 may be disposed on the second opening TH2 . In addition, the second conductor 222 may be disposed to extend from the second bonding part 122 to the inside of the second opening TH2 .

According to an embodiment, the first conductive layer 321 may be disposed on a lower surface and a side surface of the first conductor 221 . The first conductive layer 321 may be disposed in direct contact with a lower surface and a side surface of the first conductor 221 .

The first conductive layer 321 may be provided in the first opening TH1 . The first conductive layer 321 may be disposed under the first bonding part 121 . A width of the first conductive layer 321 may be greater than a width of the first bonding portion 121 .

As described above, according to the light emitting device package according to the embodiment, an electrical coupling between the first conductive layer 321 and the first bonding part 121 may be more stably provided by the first conductor 221 . .

Also, according to an embodiment, the second conductive layer 322 may be disposed on a lower surface and a side surface of the second conductor 222 . The second conductive layer 322 may be disposed in direct contact with the lower surface and side surfaces of the second conductor 222 .

The second conductive layer 322 may be provided in the second opening TH2 . The second conductive layer 322 may be disposed under the second bonding part 122 . A width of the second conductive layer 322 may be greater than a width of the second bonding portion 122 .

As described above, according to the light emitting device package 200 according to the embodiment, the electrical coupling between the second conductive layer 322 and the second bonding part 122 is more stably provided by the second conductor 222 . can be

For example, the first and second conductors 221 and 222 may be stably bonded to the first and second bonding portions 121 and 122 through separate bonding materials, respectively. In addition, side surfaces and lower surfaces of the first and second conductors 221 and 222 may contact the first and second conductive layers 321 and 322 , respectively.

Accordingly, compared to the case in which the first and second conductive layers 321 and 322 directly contact the lower surfaces of the first and second bonding portions 121 and 122, respectively, the first and second conductive layers 321 , 322 may contact the first and second conductors 221 and 222, respectively, to increase.

Accordingly, power is stably supplied from the first and second conductive layers 321 and 322 to the first and second bonding units 121 and 122 through the first and second conductors 221 and 222, respectively. can be supplied with

The first conductive layer 321 and the second conductive layer 322 may include one material selected from the group consisting of Ag, Au, Pt, or the like or an alloy thereof. However, the present invention is not limited thereto, and a material capable of securing a conductive function may be used as the first conductive layer 321 and the second conductive layer 322 .

For example, the first conductive layer 321 and the second conductive layer 322 may be formed using a conductive paste. The conductive paste may include solder paste, silver paste, or the like, and may be configured as a multi-layer made of different materials or a multi-layer or a single layer made of an alloy.

In addition, the first and second conductors 221 and 222 may include one material selected from the group consisting of Ag, Au, Pt, Al, or the like or an alloy thereof. However, the present invention is not limited thereto, and a material capable of securing a conductive function may be used as the first and second conductors 221 and 222 .

In addition, the light emitting device package according to the embodiment may include an adhesive 130 .

The adhesive 130 may be disposed between the package body 110 and the light emitting device 120 . The adhesive 130 may be disposed between the upper surface of the package body 110 and the lower surface of the light emitting device 120 . The adhesive 130 may be disposed between the upper surface of the body 113 and the lower surface of the light emitting device 120 .

In addition, the light emitting device package 100 according to the embodiment may include a recess R as shown in FIG. 32 .

The recess R may be provided in the body 113 . The recess R may be provided between the first opening TH1 and the second opening TH2. The recess (R) may be provided to be concave in the direction from the upper surface to the lower surface of the body (113). The recess R may be disposed under the light emitting device 120 . The recess R may be provided to overlap the light emitting device 120 in the first direction.

A side surface of the recess R may have an inclined surface or a curvature. In addition, the recess R may be provided in a spherical shape and a side surface thereof may be provided in a circular shape.

For example, the adhesive 130 may be disposed in the recess (R). The adhesive 130 may be disposed between the light emitting device 120 and the body 113 . The adhesive 130 may be disposed between the first bonding unit 121 and the second bonding unit 122 . In addition, the adhesive 130 may be provided by being diffused from the recess R in a direction in which the first bonding part 121 and the second bonding part 122 are arranged. For example, the adhesive 130 may be disposed in contact with the side surface of the first bonding unit 121 and the side surface of the second bonding unit 122 .

In addition, the adhesive 130 may be provided between the light emitting device 120 and the package body 110 . The adhesive 130 may be disposed between the light emitting device 120 and the first frame 111 . The adhesive 130 may be disposed between the light emitting device 120 and the second frame 112 .

The adhesive 130 may provide a stable fixing force between the light emitting device 120 and the package body 110 . The adhesive 130 may provide a stable fixing force between the light emitting device 120 and the body 113 . The adhesive 130 may be disposed in direct contact with the upper surface of the body 113 , for example. In addition, the adhesive 130 may be disposed in direct contact with the lower surface of the light emitting device 120 .

For example, the adhesive 130 may include at least one of an epoxy-based material, a silicone-based material, and a hybrid material including an epoxy-based material and a silicone-based material. . Also, as an example, when the adhesive 130 includes a reflective function, the adhesive may include white silicone.

The adhesive 130 may provide a stable fixing force between the body 113 and the light emitting device 120 , and when light is emitted to a lower surface of the light emitting device 120 , the light emitting device 120 and the light emitting device 120 . A light diffusion function may be provided between the body 113 . When light is emitted from the light emitting device 120 to the lower surface of the light emitting device 120 , the adhesive 130 provides a light diffusion function, thereby improving the light extraction efficiency of the light emitting device package 100 .

In addition, the adhesive 130 may reflect light emitted from the light emitting device 120 . When the adhesive 130 includes a reflective function, the adhesive 130 may be made of a material including TiO ₂ , Silicone, and the like.

The recess R may provide an appropriate space under the light emitting device 120 in which a kind of underfill process may be performed. Here, the under fill process may be a process of mounting the light emitting device 120 on the package body 110 and then disposing the adhesive 130 under the light emitting device 120 , and the light emitting device ( 120) may be a process of disposing the light emitting device 120 after disposing the adhesive 130 in the recess R in order to be mounted through the adhesive 130 in the process of mounting the package body 110 have.

Also, according to an embodiment, the sum of the areas of the first and second bonding parts 121 and 122 may be provided to be less than 10% based on the area of the top surface of the substrate 124 . According to the light emitting device package according to the embodiment, the sum of the areas of the first and second bonding parts 121 and 122 is the sum of the areas of the substrate 124 in order to secure a light emitting area emitted from the light emitting device to increase light extraction efficiency. It may be set to 10% or less based on the upper surface area.

In addition, according to an embodiment, the sum of the areas of the first and second bonding portions 121 and 122 may be 0.7% or more based on the area of the top surface of the substrate 124 . According to the light emitting device package according to the embodiment, the sum of the areas of the first and second bonding parts 121 and 122 is based on the top surface area of the substrate 124 in order to provide a stable bonding force to the mounted light emitting device. may be set to 0.7% or more.

In addition, according to the light emitting device package according to the embodiment, the area of the first and second bonding parts 121 and 122 so that the first conductor 221 and the second conductor 222 can be stably disposed. The sum of may be set to 0.7% or more based on the area of the top surface of the substrate 124 .

According to an embodiment, the overlapping area of the adhesive 130 with the light emitting device 120 in the first direction is the first and second openings TH1 and TH2 and the first and second bonding portions. (121, 122) may be provided larger than the area of the overlapping region.

As described above, as the area of the first and second bonding portions 121 and 122 is provided to be small, the amount of light transmitted through the lower surface of the light emitting device 120 may be increased. In addition, the adhesive 130 having good reflective properties may be provided under the light emitting device 120 . Accordingly, the light emitted in the lower direction of the light emitting device 120 is reflected by the adhesive 130 to be effectively emitted in the upper direction of the light emitting device package 100, and light extraction efficiency can be improved.

In addition, the light emitting device package according to the embodiment may include a molding unit 140 as shown in FIG. 32 .

The molding part 140 may be provided on the light emitting device 120 . The molding unit 140 may be disposed on the first frame 111 and the second frame 112 . The molding part 140 may be disposed in the cavity C provided by the package body 110 .

The molding part 140 may include an insulating material. In addition, the molding unit 140 may include a wavelength conversion unit that receives the light emitted from the light emitting device 120 and provides wavelength-converted light. For example, the molding unit 140 may include at least one selected from the group consisting of a phosphor, a quantum dot, and the like.

Also, as shown in FIG. 32 , the light emitting device package according to the embodiment may include a first upper recess R3 and a second upper recess R4 .

The first upper recess R3 may be provided on an upper surface of the first frame 111 . The first upper recess R3 may be provided to be concave in a direction from an upper surface to a lower surface of the first frame 111 . The first upper recess R3 may be spaced apart from the first opening TH1. For example, an end of the first upper recess R3 may have a round shape.

The second upper recess R4 may be provided on the upper surface of the second frame 112 . The second upper recess R4 may be provided to be concave in a direction from an upper surface to a lower surface of the second frame 112 . The second upper recess R4 may be spaced apart from the second opening TH2. For example, an end of the second upper recess R4 may have a round shape.

For example, the first upper recess R3 and the second upper recess R4 may have a width of several tens of micrometers to several hundred micrometers.

In addition, the light emitting device package according to the embodiment may include a resin part 135 as shown in FIG. 32 .

The resin part 135 may be disposed between the first frame 111 and the light emitting device 120 . The resin part 135 may be disposed between the second frame 112 and the light emitting device 120 . The resin part 135 may be provided on the bottom surface of the cavity C provided in the package body 110 .

The resin part 135 may be provided in the first upper recess R3 and the second upper recess R4 .

The resin part 135 may be provided in the first upper recess R3 , and may be provided by being diffused to a region where the first bonding part 121 is disposed. The resin part 135 may be disposed under the light emitting structure 123 . The resin part 135 may be disposed to extend to a side surface of the first bonding part 121 .

In addition, the resin part 135 may be provided in the second upper recess R4 , and may be provided while being diffused to a region where the second bonding part 122 is disposed. The resin part 135 may be disposed under the light emitting structure 123 . The resin part 135 may be disposed to extend to a side surface of the second bonding part 122 .

Also, in the light emitting device package according to the embodiment, when viewed from the top, a partial region of the first upper recess R3 may be provided to overlap the light emitting structure 123 in a vertical direction. For example, a side area of the first upper recess R3 adjacent to the first bonding part 121 may extend under the light emitting structure 123 .

Also, in the light emitting device package according to the embodiment, when viewed from an upper direction, a partial region of the second upper recess R4 may be provided to overlap the light emitting structure 123 in a vertical direction. For example, a side area of the second upper recess R4 adjacent to the second bonding part 122 may extend under the light emitting structure 123 .

In addition, the first upper recess R3 and the second upper recess R4 may provide sufficient space for the resin part 135 to be provided under the light emitting device 120 . The first upper recess R3 and the second upper recess R4 may provide an appropriate space in which a kind of underfill process may be performed under the light emitting device 120 .

Accordingly, the resin part 135 filled in the first upper recess R3 and the second upper recess R4 moves around the first bonding part 121 and the second bonding part 122 . can be effectively sealed.

For example, the resin part 135 may include at least one of an epoxy-based material, a silicone-based material, and a hybrid material including an epoxy-based material and a silicone-based material. have. In addition, the resin part 135 may be a reflective part that reflects the light emitted from the light emitting device 120 , for example, may be a resin including a reflective material such as TiO ₂ , or may be made of white silicone. may include

The resin part 135 may be disposed under the light emitting device 120 to perform a sealing function. In addition, the resin part 135 may improve adhesion between the light emitting device 120 and the first frame 111 . The resin part 135 may improve adhesion between the light emitting device 120 and the second frame 112 .

The resin part 135 may seal the periphery of the first bonding part 121 and the second bonding part 122 . In the resin part 135 , the first conductive layer 321 and the second conductive layer 322 leave the first opening TH1 region and the second opening TH2 region in the light emitting device 120 . It can be prevented from spreading and moving in the direction of the outer surface.

When the first and second conductive layers 321 and 322 diffuse and move toward the outer surface of the light emitting device 120 , the first and second conductive layers 321 and 322 are formed between the active layer of the light emitting device 120 and It may come into contact with it and cause a defect due to a short circuit. Accordingly, when the resin part 135 is disposed, it is possible to prevent a short circuit between the first and second conductive layers 321 and 322 and the active layer, thereby improving the reliability of the light emitting device package according to the embodiment.

In addition, according to an embodiment, a protective layer may be provided on the lower surface and the circumference of the light emitting device 120 . In this case, since an insulating protective layer is provided on the surface of the active layer, even when the first and second conductive layers 321 and 322 are diffused and moved toward the outer surface of the light emitting device 120, the light emission It is possible to prevent the first and second conductive layers 321 and 322 from being electrically connected to the active layer of the device 120 .

On the other hand, even when the insulating protective layer is disposed on the lower surface and the circumference of the light emitting device 120, there may be cases in which the insulating protective layer is not disposed on the upper side of the light emitting device 120 or around the substrate 124. can At this time, when the substrate 124 is provided with a conductive material, when the first and second conductive layers 321 and 322 come into contact with the upper side surface of the light emitting device 120 or the substrate 124, a short circuit defects may occur. Therefore, when the resin part 135 is disposed, it is possible to prevent a short circuit between the first and second conductive layers 321 and 322 and the upper side surface of the light emitting device 120 or the substrate 124, in an embodiment. Accordingly, the reliability of the light emitting device package may be improved.

In addition, when the resin part 135 includes a material having a reflective characteristic, such as white silicon, the resin part 135 transmits the light provided from the light emitting device 120 in the upper direction of the package body 110 . It is possible to improve the light extraction efficiency of the light emitting device package 100 by reflecting it.

On the other hand, according to another example of the light emitting device package according to the embodiment of the present invention, the resin part 135 is not provided separately, and the molding part 140 is formed between the first frame 111 and the second frame ( 112) may be arranged to be in direct contact.

In the light emitting device package according to the embodiment, power is connected to the first bonding unit 121 through the first opening TH1 region, and the second bonding unit 122 through the second opening TH2 region. may be connected to power.

Accordingly, the light emitting device 120 can be driven by the driving power supplied through the first bonding unit 121 and the second bonding unit 122 . In addition, the light emitted from the light emitting device 120 can be provided in an upper direction of the package body 110 .

On the other hand, the light emitting device package 200 according to the above-described embodiment may be supplied by being mounted on a sub-mount or a circuit board.

However, when a conventional light emitting device package is mounted on a sub-mount or a circuit board, a high-temperature process such as reflow may be applied. In this case, in the reflow process, a re-melting phenomenon occurs in the bonding region between the light emitting device and the lead frame provided in the light emitting device package, so that the stability of electrical connection and physical bonding may be weakened.

However, according to the light emitting device package and the light emitting device package manufacturing method according to the embodiment, the first bonding part and the second bonding part of the light emitting device according to the embodiment may receive driving power through the conductive layer disposed in the opening. In addition, the melting point of the conductive layer disposed in the opening may be selected to have a higher value than that of a general bonding material.

Therefore, since the light emitting device package according to the embodiment does not cause a re-melting phenomenon even when bonding to the main board or the like through a reflow process, the electrical connection and physical bonding force are not deteriorated. have.

In addition, according to the light emitting device package and the light emitting device package manufacturing method according to the embodiment, the package body 110 does not need to be exposed to high temperature in the process of manufacturing the light emitting device package. Therefore, according to the embodiment, it is possible to prevent the package body 110 from being damaged or discolored by exposure to high temperature.

Accordingly, the selection range for materials constituting the body 113 can be widened. According to an embodiment, the body 113 may be provided using not only an expensive material such as ceramic, but also a relatively inexpensive resin material.

For example, the body 113 includes at least one material selected from the group consisting of PPA (PolyPhtalAmide) resin, PCT (PolyCyclohexylenedimethylene Terephthalate) resin, EMC (Epoxy Molding Compound) resin, and SMC (Silicone Molding Compound) resin. can do.

Also, according to an embodiment, the sum of the areas of the first and second pad electrodes 121 and 122 may be provided to be 10% or less based on the area of the top surface of the substrate 124 . According to the light emitting device package according to the embodiment, the sum of the areas of the first and second bonding parts 121 and 122 is the sum of the areas of the substrate 124 in order to secure a light emitting area emitted from the light emitting device to increase light extraction efficiency. It may be set to 10% or less based on the upper surface area.

In addition, according to an embodiment, the sum of the areas of the first and second bonding portions 121 and 122 may be 0.7% or more based on the area of the top surface of the substrate 124 . According to the light emitting device package according to the embodiment, the sum of the areas of the first and second bonding parts 121 and 122 is based on the top surface area of the substrate 124 in order to provide a stable bonding force to the mounted light emitting device. may be set to 0.7% or more.

In addition, according to the light emitting device package according to the embodiment, the area of the first and second bonding parts 121 and 122 so that the first conductor 221 and the second conductor 222 can be stably disposed. The sum of may be set to 0.7% or more based on the area of the top surface of the substrate 124 .

According to an embodiment, the overlapping area of the adhesive 130 with the light emitting device 120 in the first direction is the first and second openings TH1 and TH2 and the first and second bonding portions. (121, 122) may be provided larger than the area of the overlapping region.

As described above, as the area of the first and second bonding portions 121 and 122 is provided to be small, the amount of light transmitted through the lower surface of the light emitting device 120 may be increased. In addition, the adhesive 130 having good reflective properties may be provided under the light emitting device 120 . Accordingly, the light emitted in the lower direction of the light emitting device 120 is reflected by the adhesive 130 to be effectively emitted in the upper direction of the light emitting device package 100, and light extraction efficiency can be improved.

Meanwhile, the light emitting device package according to the embodiment described with reference to FIGS. 1 to 33 may be applied to a light source device.

In addition, the light source device may include a display device, a lighting device, a head lamp, etc. according to an industrial field.

As an example of the light source device, the display device includes a bottom cover, a reflecting plate disposed on the bottom cover, a light emitting module that emits light and includes a light emitting element, and is disposed in front of the reflecting plate and guides light emitted from the light emitting module to the front A light guide plate, an optical sheet including prism sheets disposed in front of the light guide plate, a display panel disposed in front of the optical sheet, an image signal output circuit connected to the display panel and supplying an image signal to the display panel; It may include a color filter disposed in front. Here, the bottom cover, the reflector, the light emitting module, the light guide plate, and the optical sheet may form a backlight unit. Also, the display device may have a structure in which light emitting devices emitting red, green, and blue light are respectively disposed without including a color filter.

As another example of the light source device, the head lamp is a light emitting module including a light emitting device package disposed on a substrate, a reflector that reflects light emitted from the light emitting module in a predetermined direction, for example, forward, and is reflected by the reflector It may include a lens that refracts light forward, and a shade that blocks or reflects a portion of light reflected by the reflector and directed to the lens to form a light distribution pattern desired by a designer.

A lighting device, which is another example of the light source device, may include a cover, a light source module, a heat sink, a power supply unit, an inner case, and a socket. Also, the light source device according to the embodiment may further include any one or more of a member and a holder. The light source module may include a light emitting device package according to an embodiment.

Features, structures, effects, etc. described in the above embodiments are included in at least one embodiment, and are not necessarily limited to only one embodiment. Furthermore, features, structures, effects, etc. illustrated in each embodiment can be combined or modified for other embodiments by a person skilled in the art to which the embodiments belong. Therefore, the contents related to such combinations and modifications should be interpreted as being included in the scope of the embodiment.

In the above, the embodiment has been mainly described, but this is only an example and not a limitation on the embodiment, and those of ordinary skill in the art to which the embodiment belongs may find several not illustrated above within the range that does not deviate from the essential characteristics of the embodiment. It can be seen that variations and applications of branches are possible. For example, each component specifically shown in the embodiment can be implemented by modification. And the differences related to these modifications and applications should be interpreted as being included in the scope of the embodiments set forth in the appended claims.

110 package body
111 first frame
112 second frame
113 body
120 light emitting element
121 first bonding unit
122 second bonding unit
123 light emitting structure
124 board
130 glue
135 resin part
140 molding part
221 first conductor
222 second conductor
310 circuit board
311 first pad
312 second pad
313 support substrate
321 first conductive layer
321a first upper conductive layer
321b first lower conductive layer
322 second conductive layer
322a second upper conductive layer
322b second lower conductive layer
R recess
R3 first upper recess
R4 second upper recess
TH1 first opening
TH2 second opening

Claims (12)

delete delete delete delete delete delete a first frame disposed to be spaced apart from each other, a first frame including a first opening, and a second frame including a second opening;
a body disposed between the first and second frames and including a recess;
an adhesive disposed over the recess;
a light emitting device disposed on the adhesive so as to be in contact with the adhesive and including first and second bonding parts; and
first and second conductors respectively disposed on the first and second bonding portions; including,
The first and second bonding portions are respectively disposed on the first and second openings,
The first and second conductors are respectively disposed up to the inside of the first and second openings,
The first and second openings further include a first area disposed on an upper surface of each of the first and second frames, and a second area disposed on a lower surface of each of the first and second frames,
A width of an upper surface of the first region is smaller than a width of a lower surface of the second region. 8. The method of claim 7,
a first conductive layer provided in the first opening and disposed in direct contact with a lower surface of the first bonding part;
a second conductive layer provided in the second opening and disposed in direct contact with a lower surface of the second bonding part;
A light emitting device package comprising a. 9. The method of claim 8,
the first conductive layer includes a first upper conductive layer provided in an upper region of the first opening and a first lower conductive layer provided in a lower region of the first opening;
The first upper conductive layer and the first lower conductive layer include different materials from each other. delete 8. The method of claim 7,
a first conductive layer provided in the first opening and disposed in direct contact with a lower surface and a side surface of the first conductor;
a second conductive layer provided in the second opening and disposed in direct contact with a lower surface and a side surface of the second conductor;
A light emitting device package comprising a. 12. The method of claim 11,
The first conductive layer is disposed in direct contact with the lower surface of the first bonding part, and the second conductive layer is disposed in direct contact with the lower surface of the second bonding part.

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