KR102349158B1 - Assembly chamber for self assembly of semiconductor light emitting device - Google Patents

Abstract

The present invention relates to a method of manufacturing a display device, and more particularly, to an assembly chamber for self-assembly of a micro LED. The present invention provides an assembly chamber configured to contain a fluid. The assembling chamber is formed on a bottom part, a side wall part formed to a predetermined height on the bottom part, and a side wall part arranged to surround the bottom part, and on the bottom part, any one of a plurality of inner surfaces provided on the side wall part and a partition wall portion extending from an inner surface to the other inner surface facing the one, wherein at least a portion of the partition wall portion is configured to have a variable vertical height with respect to the bottom portion.

Description

Assembly chamber for self-assembly of semiconductor light emitting devices

The present invention relates to a method of manufacturing a display device, and more particularly, to an assembly chamber for self-assembly of a micro LED.

Recently, liquid crystal displays (LCD), organic light emitting diode (OLED) displays, and micro LED displays are competing to implement a large-area display in the field of display technology.

On the other hand, when a semiconductor light emitting device (micro LED (uLED)) having a diameter or cross-sectional area of 100 microns or less is used for a display, very high efficiency can be provided because the display does not absorb light using a polarizing plate or the like. However, since a large display requires millions of semiconductor light emitting devices, it is difficult to transfer the devices compared to other technologies.

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Techniques currently being developed as a transfer process include pick & place, laser lift-off (LLO), or self-assembly. Among them, the self-assembly method is a method in which the semiconductor light emitting device finds its own position in a fluid, and is the most advantageous method for realizing a large-screen display device.

Recently, although a micro LED structure suitable for self-assembly has been proposed in US Patent No. 9,825,202, research on a technology for manufacturing a display through self-assembly of the micro LED is still insufficient. Accordingly, the present invention proposes a new type of manufacturing apparatus in which the micro LED can be self-assembled.

One object of the present invention is to provide a new manufacturing process having high reliability in a large-screen display using a micro-sized semiconductor light emitting device.

Another object of the present invention is to provide an assembly chamber in which each region of the chamber can be freely moved while a substrate is immersed in a fluid.

In order to achieve the above object, the present invention provides an assembly chamber configured to contain a fluid. The assembling chamber is formed on a bottom part, a side wall part formed to a predetermined height on the bottom part, and a side wall part arranged to surround the bottom part, and on the bottom part, any one of a plurality of inner surfaces provided on the side wall part and a partition wall portion extending from an inner surface to the other inner surface facing the one, wherein at least a portion of the partition wall portion is configured to have a variable vertical height with respect to the bottom portion.

In an embodiment, the barrier rib part may include a frame part fixed to the bottom part and a gate part configured to be movable along one surface of the frame part, and the height of at least a portion of the barrier rib part may be changed as the gate part moves. .

In an embodiment, the gate unit may switch from one of a first state positioned at a first height to the bottom part and a second state positioned at a second height lower than the first height to another.

In an embodiment, the gate part may be in close contact with the frame part in the first state.

In an embodiment, the gate part may be switched to the second state after being spaced apart from the frame part by a predetermined distance in a state in which the gate part is in close contact with the frame part.

In an embodiment, a sealing part disposed on one surface of the gate part in close contact with the frame part may be further included.

In one embodiment, it may further include a water level sensor configured to sense the level of the accommodated fluid.

In one embodiment, the present invention is disposed on at least one of the bottom portion and the side wall portion, and a fluid supply portion configured to supply a fluid to the assembly chamber, and the fluid disposed on at least one of the floor portion and the side wall portion, the accommodated fluid It may further include a fluid discharge unit configured to discharge to the outside.

In an embodiment, the present invention may further include a sonicator disposed on at least one of the bottom part and the side wall part, and vibrating the accommodated fluid at a predetermined frequency.

In an embodiment, at least a portion of the bottom portion may be formed of a light-transmitting layer.

According to the present invention having the above configuration, in a display device in which individual pixels are formed of micro light emitting diodes, a large number of semiconductor light emitting devices can be assembled at once.

As described above, according to the present invention, it is possible to pixelate a semiconductor light emitting device in a large amount on a small-sized wafer and then transfer it to a large-area substrate. Through this, it is possible to manufacture a large-area display device at a low cost.

In addition, according to the present invention, it is possible to realize low-cost, high-efficiency, and high-speed transfer regardless of the size, number, or transfer area of parts by simultaneously transferring the semiconductor light emitting device to the correct position using a magnetic field and an electric field in a solution. .

Furthermore, since the assembly is performed by an electric field, selective assembly is possible through selective electrical application without a separate additional device or process. In addition, by arranging the assembly substrate on the upper side of the chamber, loading and unloading of the substrate can be facilitated, loading and unloading can be facilitated, and non-specific binding of the semiconductor light emitting device can be prevented.

In addition, according to the present invention, since the height of the barrier rib portion dividing the plurality of regions provided in the assembly chamber can be adjusted, it is possible to prevent the semiconductor light emitting devices floating in each region from mixing with each other, and the substrate can be in a fluid state. Each area can be moved freely in the locked state.

1 is a conceptual diagram illustrating an embodiment of a display device using a semiconductor light emitting device of the present invention.
FIG. 2 is a partially enlarged view of a portion A of the display device of FIG. 1 .
FIG. 3 is an enlarged view of the semiconductor light emitting device of FIG. 2 .
4 is an enlarged view illustrating another embodiment of the semiconductor light emitting device of FIG. 2 .
5A to 5E are conceptual views for explaining a new process of manufacturing the above-described semiconductor light emitting device.
6 is a conceptual diagram illustrating an example of an apparatus for self-assembly of a semiconductor light emitting device according to the present invention.
7 is a block diagram of the self-assembly apparatus of FIG. 6 .
8A to 8E are conceptual views illustrating a process of self-assembling a semiconductor light emitting device using the self-assembly apparatus of FIG. 6 .
9 is a conceptual diagram illustrating the semiconductor light emitting device of FIGS. 8A to 8E .
10 is a flowchart illustrating a self-assembly method according to the present invention.
11 is a conceptual diagram illustrating a first state of the substrate chuck.
12 is a conceptual diagram illustrating a second state of the substrate chuck.
13 is a plan view of a first frame provided in the substrate chuck.
14 is a conceptual diagram illustrating a state in which an assembly substrate is loaded in a substrate chuck.
15 is a perspective view of a magnetic field forming unit according to an embodiment of the present invention.
16 is a side view of a magnetic field forming unit according to an embodiment of the present invention.
17 is a lower side view of another magnetic field forming unit according to an embodiment of the present invention.
18 is a conceptual diagram illustrating the trajectories of magnets provided in the magnetic field forming unit according to the present invention.
19 is a conceptual diagram illustrating a state of supplying a semiconductor light emitting device.
20 is a plan view of an assembly chamber according to an embodiment of the present invention.
Fig. 21 is a cross-sectional view taken along line A-A' in Fig. 20;
22 is a perspective view of an assembly chamber according to an embodiment of the present invention.
23 and 24 are conceptual views illustrating an assembly chamber having a buffer area.
25 is a conceptual diagram illustrating an assembly chamber including a gate part.
26 is an enlarged view of the gate unit provided in the assembly chamber according to the present invention.
27 is a conceptual view emphasizing the bottom portion and the side wall portion of the assembly chamber according to the present invention.
28 is a conceptual diagram emphasizing the gate unit according to the present invention.
29 and 30 are conceptual views illustrating a change in height of a partition wall portion.
31 to 33 are conceptual views emphasizing the components provided in the assembly chamber according to the present invention.

Hereinafter, the embodiments disclosed in the present specification will be described in detail with reference to the accompanying drawings, but the same or similar components are assigned the same reference numbers regardless of reference numerals, and redundant description thereof will be omitted. The suffixes "module" and "part" for components used in the following description are given or mixed in consideration of only the ease of writing the specification, and do not have distinct meanings or roles by themselves. In addition, in describing the embodiments disclosed in the present specification, if it is determined that detailed descriptions of related known technologies may obscure the gist of the embodiments disclosed in this specification, the detailed description thereof will be omitted. In addition, it should be noted that the accompanying drawings are only for easy understanding of the embodiments disclosed in the present specification, and should not be construed as limiting the technical spirit disclosed herein by the accompanying drawings.

It is also understood that when an element, such as a layer, region, or substrate, is referred to as being “on” another component, it may be directly present on the other element or intervening elements in between. There will be.

The display device described in this specification includes a mobile phone, a smart phone, a laptop computer, a digital broadcasting terminal, a personal digital assistant (PDA), a portable multimedia player (PMP), a navigation system, and a slate PC. , Tablet PCs, Ultra Books, Digital TVs, Digital Signage, Head Mounting Displays (HMDs), desktop computers, and the like. However, it will be readily apparent to those skilled in the art that the configuration according to the embodiment described in the present specification may be applied to a display capable device even in a new product form to be developed later.

1 is a conceptual diagram illustrating an embodiment of a display device using a semiconductor light emitting device of the present invention, FIG. 2 is a partial enlarged view of part A of the display device of FIG. 1 , and FIG. 3 is an enlarged view of the semiconductor light emitting device of FIG. 2 FIG. 4 is an enlarged view showing another embodiment of the semiconductor light emitting device of FIG. 2 .

As illustrated, information processed by the control unit of the display apparatus 100 may be output from the display module 140 . A closed-loop case 101 surrounding an edge of the display module may form a bezel of the display device.

The display module 140 includes a panel 141 on which an image is displayed, and the panel 141 includes a micro-sized semiconductor light emitting device 150 and a wiring board 110 on which the semiconductor light emitting device 150 is mounted. can be provided.

A wiring may be formed on the wiring board 110 to be connected to the n-type electrode 152 and the p-type electrode 156 of the semiconductor light emitting device 150 . Through this, the semiconductor light emitting device 150 may be provided on the wiring board 110 as an individual pixel that emits light.

The image displayed on the panel 141 is visual information, and is realized by independently controlling light emission of sub-pixels arranged in a matrix form through the wiring.

In the present invention, a micro LED (Light Emitting Diode) is exemplified as a type of the semiconductor light emitting device 150 that converts current into light. The micro LED may be a light emitting diode formed in a small size of 100 micrometers or less. In the semiconductor light emitting device 150 , blue, red, and green colors are provided in the light emitting region, respectively, and a unit pixel may be realized by a combination thereof. That is, the unit pixel means a minimum unit for realizing one color, and at least three micro LEDs may be provided in the unit pixel.

More specifically, referring to FIG. 3 , the semiconductor light emitting device 150 may have a vertical structure.

For example, the semiconductor light emitting device 150 is mainly made of gallium nitride (GaN), and indium (In) and/or aluminum (Al) are added together to be implemented as a high output light emitting device that emits various lights including blue. can be

The vertical semiconductor light emitting device includes a p-type electrode 156 , a p-type semiconductor layer 155 formed on the p-type electrode 156 , an active layer 154 formed on the p-type semiconductor layer 155 , and an active layer 154 . It includes an n-type semiconductor layer 153 formed thereon, and an n-type electrode 152 formed on the n-type semiconductor layer 153 . In this case, the lower p-type electrode 156 may be electrically connected to the p-electrode of the wiring board, and the upper n-type electrode 152 may be electrically connected to the n-electrode at the upper side of the semiconductor light emitting device. The vertical semiconductor light emitting device 150 has a great advantage in that it is possible to reduce the chip size because electrodes can be arranged up and down.

As another example, referring to FIG. 4 , the semiconductor light emitting device may be a flip chip type light emitting device.

For this example, the semiconductor light emitting device 150' is formed on the p-type electrode 156', the p-type semiconductor layer 155' on which the p-type electrode 156' is formed, and the p-type semiconductor layer 155'. The formed active layer 154', the n-type semiconductor layer 153' formed on the active layer 154', and the n-type semiconductor layer 153' are spaced apart from the p-type electrode 156' in the horizontal direction. electrode 152'. In this case, both the p-type electrode 156 ′ and the n-type electrode 152 ′ may be electrically connected to the p-electrode and the n-electrode of the wiring board under the semiconductor light emitting device.

The vertical semiconductor light emitting device and the horizontal semiconductor light emitting device may be a green semiconductor light emitting device, a blue semiconductor light emitting device, or a red semiconductor light emitting device, respectively. In the case of a green semiconductor light emitting device and a blue semiconductor light emitting device, gallium nitride (GaN) is mainly used, and indium (In) and/or aluminum (Al) are added together to implement a high output light emitting device that emits green or blue light. can be For this example, the semiconductor light emitting device may be a gallium nitride thin film formed in various layers such as n-Gan, p-Gan, AlGaN, InGan, and specifically, the p-type semiconductor layer is P-type GaN, and the n The type semiconductor layer may be N-type GaN. However, in the case of a red semiconductor light emitting device, the p-type semiconductor layer may be P-type GaAs, and the n-type semiconductor layer may be N-type GaAs.

Also, the p-type semiconductor layer may be P-type GaN doped with Mg on the p-electrode side, and the n-type semiconductor layer may be N-type GaN doped with Si on the n-electrode side. In this case, the above-described semiconductor light emitting devices may be semiconductor light emitting devices without an active layer.

On the other hand, referring to FIGS. 1 to 4 , since the light emitting diode is very small, unit pixels that emit self-luminescence can be arranged in a high definition in the display panel, thereby realizing a high-definition display device.

In the display device using the semiconductor light emitting device of the present invention described above, the semiconductor light emitting device grown on a wafer and formed through mesa and isolation is used as an individual pixel. In this case, the micro-sized semiconductor light emitting device 150 must be transferred to a predetermined position on the substrate of the display panel on the wafer. There is a pick and place method as such a transfer technology, but the success rate is low and a lot of time is required. As another example, there is a technique of transferring several devices at once using a stamp or a roll, but there is a limit to the yield, so it is not suitable for a large screen display. The present invention proposes a new manufacturing method and manufacturing apparatus of a display device that can solve these problems.

To this end, a new method of manufacturing a display device will be first described below. 5A to 5E are conceptual views for explaining a new process of manufacturing the above-described semiconductor light emitting device.

In the present specification, a display device using a passive matrix (PM) type semiconductor light emitting device is exemplified. However, the examples described below are also applicable to an active matrix (AM) type semiconductor light emitting device. In addition, although a method of self-assembling a horizontal semiconductor light emitting device is exemplified, it is also applicable to a method of self-assembling a vertical semiconductor light emitting device.

First, according to the manufacturing method, the first conductivity type semiconductor layer 153 , the active layer 154 , and the second conductivity type semiconductor layer 155 are grown on the growth substrate 159 , respectively ( FIG. 5A ).

After the first conductivity type semiconductor layer 153 is grown, an active layer 154 is grown on the first conductivity type semiconductor layer 153 , and then a second conductivity type semiconductor is grown on the active layer 154 . Layer 155 is grown. In this way, when the first conductivity type semiconductor layer 153, the active layer 154, and the second conductivity type semiconductor layer 155 are sequentially grown, as shown in FIG. 5A, the first conductivity type semiconductor layer 153 , the active layer 154 and the second conductive semiconductor layer 155 form a stacked structure.

In this case, the first conductivity-type semiconductor layer 153 may be a p-type semiconductor layer, and the second conductivity-type semiconductor layer 155 may be an n-type semiconductor layer. However, the present invention is not necessarily limited thereto, and examples in which the first conductivity type is n-type and the second conductivity type is p-type are also possible.

In addition, although the case in which the active layer is present is exemplified in this embodiment, a structure without the active layer is possible in some cases as described above. As an example, the p-type semiconductor layer may be P-type GaN doped with Mg, and the n-type semiconductor layer may be N-type GaN doped with Si on the n-electrode side.

The growth substrate 159 (wafer) may be formed of a material having a light-transmitting property, for example, any one of sapphire (Al2O3), GaN, ZnO, and AlO, but is not limited thereto. In addition, the growth substrate 1059 may be formed of a material suitable for semiconductor material growth, a carrier wafer. It may be formed of a material having excellent thermal conductivity, and, including a conductive substrate or an insulating substrate, for example, a SiC substrate having higher thermal conductivity than a sapphire (Al2O3) substrate or at least one of Si, GaAs, GaP, InP, Ga2O3 can be used

Next, at least some of the first conductivity type semiconductor layer 153 , the active layer 154 , and the second conductivity type semiconductor layer 155 are removed to form a plurality of semiconductor light emitting devices ( FIG. 5B ).

More specifically, isolation is performed so that the plurality of light emitting devices form a light emitting device array. That is, the first conductivity type semiconductor layer 153 , the active layer 154 , and the second conductivity type semiconductor layer 155 are vertically etched to form a plurality of semiconductor light emitting devices.

In the case of forming a horizontal type semiconductor light emitting device, the active layer 154 and the second conductivity type semiconductor layer 155 are partially removed in the vertical direction so that the first conductivity type semiconductor layer 153 is exposed to the outside. An exposed mesa process, followed by an isolation of the first conductive semiconductor layer to form a plurality of semiconductor light emitting device arrays by etching may be performed.

Next, second conductivity type electrodes 156 (or p-type electrodes) are respectively formed on one surface of the second conductivity type semiconductor layer 155 ( FIG. 5C ). The second conductive electrode 156 may be formed by a deposition method such as sputtering, but the present invention is not limited thereto. However, when the first conductive semiconductor layer and the second conductive semiconductor layer are an n-type semiconductor layer and a p-type semiconductor layer, respectively, the second conductive electrode 156 may be an n-type electrode.

Then, the growth substrate 159 is removed to provide a plurality of semiconductor light emitting devices. For example, the growth substrate 1059 may be removed using a laser lift-off (LLO) method or a chemical lift-off (CLO) method ( FIG. 5D ).

Thereafter, a step of mounting the semiconductor light emitting devices 150 on a substrate in a chamber filled with a fluid is performed ( FIG. 5E ).

For example, the semiconductor light emitting devices 150 and the substrate are put in a chamber filled with a fluid, and the semiconductor light emitting devices are self-assembled on the substrate 161 using flow, gravity, surface tension, and the like. In this case, the substrate may be the assembly substrate 161 .

As another example, it is also possible to put a wiring board in the assembly chamber instead of the assembly board 161 so that the semiconductor light emitting devices 150 are directly seated on the wiring board. In this case, the substrate may be a wiring substrate. However, for convenience of explanation, in the present invention, the substrate is provided as the assembly substrate 161 to exemplify that the semiconductor light emitting devices 1050 are seated.

Cells (not shown) in which the semiconductor light emitting devices 150 are inserted may be provided on the assembly substrate 161 to facilitate mounting of the semiconductor light emitting devices 150 on the assembly substrate 161 . Specifically, cells in which the semiconductor light emitting devices 150 are seated are formed on the assembly substrate 161 at positions where the semiconductor light emitting devices 150 are aligned with the wiring electrodes. The semiconductor light emitting devices 150 are assembled to the cells while moving in the fluid.

After a plurality of semiconductor light emitting devices are arrayed on the assembly board 161 , when the semiconductor light emitting devices of the assembly board 161 are transferred to a wiring board, large-area transfer is possible. Accordingly, the assembly substrate 161 may be referred to as a temporary substrate.

On the other hand, in order to apply the self-assembly method described above to the manufacture of a large-screen display, it is necessary to increase the transfer yield. The present invention proposes a method and apparatus for minimizing the influence of gravity or frictional force and preventing non-specific binding in order to increase the transfer yield.

In this case, in the display device according to the present invention, a magnetic material is disposed on the semiconductor light emitting device to move the semiconductor light emitting device using magnetic force, and the semiconductor light emitting device is seated at a predetermined position by using an electric field during the movement process. Hereinafter, such a transfer method and apparatus will be described in more detail with the accompanying drawings.

6 is a conceptual diagram illustrating an example of a self-assembly apparatus for a semiconductor light emitting device according to the present invention, and FIG. 7 is a block diagram of the self-assembly apparatus of FIG. 6 . 8A to 8D are conceptual views illustrating a process of self-assembling a semiconductor light emitting device using the self-assembly apparatus of FIG. 6 , and FIG. 9 is a conceptual diagram for explaining the semiconductor light emitting device of FIGS. 8A to 8D .

6 and 7 , the self-assembly apparatus 160 of the present invention may include an assembly chamber 162 , a magnet 163 and a position control unit 164 .

The assembly chamber 162 has a space for accommodating a plurality of semiconductor light emitting devices. The space may be filled with a fluid, and the fluid may include water as an assembly solution. Accordingly, the assembly chamber 162 may be a water tank and may be configured as an open type. However, the present invention is not limited thereto, and the assembly chamber 162 may be of a closed type in which the space is a closed space.

A substrate 161 may be disposed in the assembly chamber 162 so that an assembly surface on which the semiconductor light emitting devices 150 are assembled faces downward. For example, the substrate 161 may be transferred to an assembly position by a transfer unit, and the transfer unit may include a stage 165 on which the substrate is mounted. The position of the stage 165 is adjusted by the controller, and through this, the substrate 161 can be transferred to the assembly position.

At this time, in the assembly position, the assembly surface of the substrate 161 faces the bottom of the assembly chamber 150 . As shown, the assembly surface of the substrate 161 is disposed to be immersed in the fluid in the assembly chamber 162 . Accordingly, the semiconductor light emitting device 150 moves to the assembly surface in the fluid.

The substrate 161 is an assembled substrate capable of forming an electric field, and may include a base portion 161a, a dielectric layer 161b, and a plurality of electrodes 161c.

The base portion 161a may be made of an insulating material, and the plurality of electrodes 161c may be a thin film or a thick film bi-planar electrode patterned on one surface of the base portion 161a. The electrode 161c may be formed of, for example, a stack of Ti/Cu/Ti, Ag paste, ITO, or the like.

The dielectric layer 161b is made of an inorganic material such as SiO2, SiNx, SiON, Al2O3, TiO2, HfO2, or the like. Alternatively, the dielectric layer 161b may be configured as a single layer or multi-layer as an organic insulator. The dielectric layer 161b may have a thickness of several tens of nm to several μm.

Furthermore, the substrate 161 according to the present invention includes a plurality of cells 161d partitioned by barrier ribs. The cells 161d are sequentially arranged in one direction and may be made of a polymer material. Also, the partition walls 161e forming the cells 161d are shared with the neighboring cells 161d. The partition wall 161e protrudes from the base portion 161a, and the cells 161d may be sequentially disposed along one direction by the partition wall 161e. More specifically, the cells 161d are sequentially arranged in the column and row directions, respectively, and may have a matrix structure.

Inside the cells 161d, as shown, a groove for accommodating the semiconductor light emitting device 150 is provided, and the groove may be a space defined by the partition wall 161e. The shape of the groove may be the same as or similar to that of the semiconductor light emitting device. For example, when the semiconductor light emitting device has a rectangular shape, the groove may have a rectangular shape. Also, although not shown, when the semiconductor light emitting device has a circular shape, the grooves formed in the cells may have a circular shape. Furthermore, each of the cells is configured to accommodate a single semiconductor light emitting device. That is, one semiconductor light emitting device is accommodated in one cell.

Meanwhile, the plurality of electrodes 161c may include a plurality of electrode lines disposed at the bottom of each of the cells 161d, and the plurality of electrode lines may extend to adjacent cells.

The plurality of electrodes 161c are disposed below the cells 161d, and different polarities are applied to each other to generate an electric field in the cells 161d. To form the electric field, the dielectric layer may form the bottom of the cells 161d while covering the plurality of electrodes 161c with the dielectric layer. In this structure, when different polarities are applied to the pair of electrodes 161c under each of the cells 161d, an electric field is formed, and the semiconductor light emitting device can be inserted into the cells 161d by the electric field. have.

In the assembly position, the electrodes of the substrate 161 are electrically connected to the power supply unit 171 . The power supply unit 171 applies power to the plurality of electrodes to generate the electric field.

As illustrated, the self-assembly apparatus may include a magnet 163 for applying a magnetic force to the semiconductor light emitting devices. The magnet 163 is spaced apart from the assembly chamber 162 to apply a magnetic force to the semiconductor light emitting devices 150 . The magnet 163 may be disposed to face the opposite surface of the assembly surface of the substrate 161 , and the position of the magnet is controlled by the position controller 164 connected to the magnet 163 .

The semiconductor light emitting device 1050 may include a magnetic material to move in the fluid by the magnetic field of the magnet 163 .

Referring to FIG. 9 , in a semiconductor light emitting device including a magnetic material, a first conductivity type electrode 1052 , a second conductivity type electrode 1056 , and a first conductivity type semiconductor layer in which the first conductivity type electrode 1052 are disposed (1053), a second conductivity type semiconductor layer 1055 overlapping the first conductivity type semiconductor layer 1052 and on which the second conductivity type electrode 1056 is disposed, and the first and second conductivity type semiconductors an active layer 1054 disposed between the layers 1053 and 1055 .

Here, the first conductivity type may be p-type, the second conductivity type may be n-type, and vice versa. In addition, as described above, the semiconductor light emitting device without the active layer may be used.

Meanwhile, in the present invention, the first conductive electrode 1052 may be generated after the semiconductor light emitting device is assembled on the wiring board by self-assembly of the semiconductor light emitting device. Also, in the present invention, the second conductive electrode 1056 may include the magnetic material. The magnetic material may mean a magnetic metal. The magnetic material may be Ni, SmCo, or the like, and as another example, may include a material corresponding to at least one of Gd-based, La-based, and Mn-based materials.

The magnetic material may be provided on the second conductive electrode 1056 in the form of particles. Alternatively, in a conductive electrode including a magnetic material, one layer of the conductive electrode may be formed of a magnetic material. For this example, as shown in FIG. 9 , the second conductive electrode 1056 of the semiconductor light emitting device 1050 may include a first layer 1056a and a second layer 1056b. Here, the first layer 1056a may include a magnetic material, and the second layer 1056b may include a metal material rather than a magnetic material.

As shown, in this example, the first layer 1056a including a magnetic material may be disposed to contact the second conductive semiconductor layer 1055 . In this case, the first layer 1056a is disposed between the second layer 1056b and the second conductivity type semiconductor layer 1055 . The second layer 1056b may be a contact metal connected to the second electrode of the wiring board. However, the present invention is not necessarily limited thereto, and the magnetic material may be disposed on one surface of the first conductivity type semiconductor layer.

Referring back to FIGS. 6 and 7 , more specifically, the self-assembly device includes a magnet handler that can be moved automatically or manually in the x, y, and z axes on the upper portion of the assembly chamber, or the magnet 163 . It may be provided with a motor capable of rotating the. The magnet handler and the motor may constitute the position control unit 164 . Through this, the magnet 163 rotates in a horizontal direction, clockwise or counterclockwise direction with the substrate 161 .

Meanwhile, a light-transmitting bottom plate 166 may be formed in the assembly chamber 162 , and the semiconductor light emitting devices may be disposed between the bottom plate 166 and the substrate 161 . An image sensor 167 may be disposed to face the bottom plate 166 to monitor the inside of the assembly chamber 162 through the bottom plate 166 . The image sensor 167 is controlled by the controller 172 and may include an inverted type lens and a CCD to observe the assembly surface of the substrate 161 .

The self-assembly apparatus described above is made to use a combination of a magnetic field and an electric field, and using this, the semiconductor light emitting devices are seated at a predetermined position on the substrate by an electric field in the process of moving by a change in the position of the magnet. can Hereinafter, the assembly process using the self-assembly apparatus described above will be described in more detail.

First, a plurality of semiconductor light emitting devices 1050 including a magnetic material are formed through the process described with reference to FIGS. 5A to 5C . In this case, in the process of forming the second conductive type electrode of FIG. 5C , a magnetic material may be deposited on the semiconductor light emitting device.

Next, the substrate 161 is transferred to the assembly position, and the semiconductor light emitting devices 1050 are put into the assembly chamber 162 ( FIG. 8A ).

As described above, the assembly position of the substrate 161 will be a position in which the assembly chamber 162 is disposed so that the assembly surface of the substrate 161 on which the semiconductor light emitting devices 1050 are assembled faces downward. can

In this case, some of the semiconductor light emitting devices 1050 may sink to the bottom of the assembly chamber 162 and some may float in the fluid. When the light-transmitting bottom plate 166 is provided in the assembly chamber 162 , some of the semiconductor light emitting devices 1050 may sink to the bottom plate 166 .

Next, a magnetic force is applied to the semiconductor light emitting devices 1050 so that the semiconductor light emitting devices 1050 vertically float in the assembly chamber 162 ( FIG. 8B ).

When the magnet 163 of the self-assembly device moves from its original position to the opposite surface of the assembly surface of the substrate 161 , the semiconductor light emitting devices 1050 float toward the substrate 161 in the fluid. The original position may be a position deviated from the assembly chamber 162 . As another example, the magnet 163 may be configured as an electromagnet. In this case, electricity is supplied to the electromagnet to generate an initial magnetic force.

Meanwhile, in this example, when the magnitude of the magnetic force is adjusted, the separation distance between the assembly surface of the substrate 161 and the semiconductor light emitting devices 1050 may be controlled. For example, the separation distance is controlled using the weight, buoyancy, and magnetic force of the semiconductor light emitting devices 1050 . The separation distance may be several millimeters to several tens of micrometers from the outermost surface of the substrate.

Next, a magnetic force is applied to the semiconductor light emitting devices 1050 so that the semiconductor light emitting devices 1050 move in one direction in the assembly chamber 162 . For example, the magnet 163 moves in a direction horizontal to the substrate, clockwise or counterclockwise ( FIG. 8C ). In this case, the semiconductor light emitting devices 1050 move in a direction parallel to the substrate 161 at a position spaced apart from the substrate 161 by the magnetic force.

Next, in the process of moving the semiconductor light emitting devices 1050, applying an electric field to guide the semiconductor light emitting devices 1050 to the preset position so that they are seated at a preset position of the substrate 161 is proceed (Fig. 8c). For example, while the semiconductor light emitting devices 1050 are moving in a direction horizontal to the substrate 161, they are moved in a direction perpendicular to the substrate 161 by the electric field, thereby causing the installed in the set position.

More specifically, an electric field is generated by supplying power to the bi-planar electrode of the substrate 161 , and assembly is induced only at a preset position using this. That is, by using the selectively generated electric field, the semiconductor light emitting devices 1050 are self-assembled at the assembly position of the substrate 161 . To this end, cells in which the semiconductor light emitting devices 1050 are inserted may be provided on the substrate 161 .

Thereafter, the unloading process of the substrate 161 is performed, and the assembly process is completed. When the substrate 161 is an assembly substrate, a post-process for realizing a display device by transferring the semiconductor light emitting devices arranged as described above to a wiring substrate may be performed.

On the other hand, after guiding the semiconductor light emitting devices 1050 to the predetermined position, the magnet so that the semiconductor light emitting devices 1050 remaining in the assembly chamber 162 fall to the bottom of the assembly chamber 162 . The 163 may be moved in a direction away from the substrate 161 ( FIG. 8D ). As another example, when power supply is stopped when the magnet 163 is an electromagnet, the semiconductor light emitting devices 1050 remaining in the assembly chamber 162 fall to the floor of the assembly chamber 162 .

Thereafter, when the semiconductor light emitting devices 1050 at the bottom of the assembly chamber 162 are recovered, the recovered semiconductor light emitting devices 1050 can be reused.

The self-assembly apparatus and method described above uses a magnetic field to concentrate distant parts near a predetermined assembly site to increase the assembly yield in fluidic assembly, and applies a separate electric field to the assembly site so that the parts are selectively transferred only to the assembly site. to be assembled. At this time, the assembly board is placed on the upper part of the water tank and the assembly surface is directed downward to minimize the effect of gravity due to the weight of the parts and prevent non-specific binding to eliminate defects. That is, to increase the transfer yield, the assembly substrate is placed on the upper part to minimize the influence of gravity or frictional force, and non-specific binding is prevented.

As described above, according to the present invention having the above configuration, in a display device in which individual pixels are formed of semiconductor light emitting devices, a large number of semiconductor light emitting devices can be assembled at once.

As described above, according to the present invention, it is possible to pixelate a semiconductor light emitting device in a large amount on a small-sized wafer and then transfer it to a large-area substrate. Through this, it is possible to manufacture a large-area display device at a low cost.

When performing the self-assembly process described above, several problems arise.

First, as the area of the display increases, the area of the assembly substrate increases. As the area of the assembly substrate increases, the bending phenomenon of the substrate increases. When self-assembly is performed in a curved state of the assembly substrate, since a magnetic field is not uniformly formed on the surface of the assembly substrate, it is difficult to stably perform self-assembly.

Second, since the semiconductor light emitting device cannot be completely uniformly dispersed in the fluid, and the magnetic field formed on the surface of the assembly substrate cannot be perfectly uniform, a problem that the semiconductor light emitting device is concentrated only on a part of the assembly substrate may occur. can

The present invention provides a self-assembly apparatus capable of increasing the self-assembly yield, as well as the problems described above.

The self-assembly apparatus according to the present invention may include a substrate surface treatment unit, a substrate chuck 200 , a magnetic field forming unit 300 , a chip supply unit 400 , and an assembly chamber 500 . However, the present invention is not limited thereto, and the self-assembly apparatus according to the present invention may include more or fewer components than the above-described components.

Before describing the self-assembly apparatus according to the present invention, a self-assembly method using the self-assembly apparatus according to the present invention will be briefly described.

10 is a flowchart illustrating a self-assembly method according to the present invention.

First, the surface treatment step (S110) of the assembly substrate is performed. Although this step is not essential, when the surface of the substrate becomes hydrophilic, it is possible to prevent bubbles from forming on the surface of the substrate.

Next, a step ( S120 ) of loading the assembly substrate into the substrate chuck is performed. The assembly substrate loaded on the substrate chuck 200 is transferred to an assembly position of the assembly chamber. Thereafter, the magnetic field forming unit approaches the assembly substrate through vertical and horizontal movement.

In this state, the step of supplying the chip (S130) proceeds. Specifically, the step of dispersing the semiconductor light emitting device on the assembly surface of the assembly substrate proceeds. When the semiconductor light emitting device is dispersed near the assembly surface while the magnetic field forming unit 300 is sufficiently close to the assembly substrate, the semiconductor light emitting device is attached to the assembly surface by the magnetic field forming unit. The semiconductor light emitting devices are dispersed on the assembly surface with a suitable dispersion.

However, the present invention is not limited thereto, and the semiconductor light emitting device may be dispersed in the fluid in the assembly chamber before the substrate is transferred to the assembly position. That is, the timing of performing the chip supply step ( S130 ) is not limited to after the assembly substrate is transferred to the assembly position.

The supply method of the semiconductor light emitting device may vary depending on the area of the assembly substrate, the type of the semiconductor light emitting device to be assembled, the self-assembly speed, and the like.

After that, self-assembly is performed and a step (S140) of recovering the semiconductor light emitting device is performed. The self-assembly will be described later along with a description of the self-assembly apparatus according to the present invention. On the other hand, the semiconductor light emitting device does not necessarily need to be recovered after self-assembly. After the self-assembly is completed, self-assembly of a new substrate may be performed after replenishing the semiconductor light emitting device in the assembly chamber.

Finally, after the self-assembly is completed, the step (S150) of inspecting and drying the assembly substrate and separating the substrate from the substrate chuck may be performed. The inspection of the assembly board may be performed at a position where self-assembly is performed, and may be performed after transferring the assembly board to another location.

Meanwhile, drying of the assembly substrate may be performed after the assembly substrate is separated from the fluid. After drying the assembly substrate, a self-assembly post process may be performed.

The basic principle of self-assembly, the structure of the substrate (or assembly substrate), and the contents of the semiconductor light emitting device are replaced with those described in FIGS. 1 to 9 . On the other hand, the vertical moving part, the horizontal moving part, the rotating part and other moving means described below can be implemented through known various means, such as a motor and a ball screw, a rack gear and a pinion gear, a pulley and a timing belt, so the detailed description is omit

On the other hand, the control unit 172 described with reference to FIG. 7 controls the movements of the vertical moving unit, the horizontal moving unit, the rotating unit, and other moving means provided in the above-described components. That is, the control unit 172 is configured to control the movement and rotation movement of the x, y, and z axes of each component. Although not mentioned otherwise in this specification, the movement of the vertical moving unit, the horizontal moving unit, the rotating unit and other moving means is generated by the control of the controller 172 .

On the other hand, the electrode 161c provided in the substrate (or assembly substrate, 161) described in FIGS. 6 to 9 is referred to as an assembly electrode, and the assembly electrode 161c is the power supply unit described in FIG. 7 through the substrate chuck 200 ( 171), and the power supply unit 171 supplies power to the assembly electrode 161c under the control of the control unit 172. A detailed description thereof will be given later.

Hereinafter, the above-described components will be described.

First, the substrate surface treatment unit serves to make the substrate surface hydrophilic. Specifically, the self-assembly apparatus according to the present invention performs self-assembly in a state in which the assembly substrate is in contact with the fluid surface. When the assembly surface of the assembly substrate has a property different from the fluid surface, bubbles may occur on the assembly surface, and non-specific bonding between the semiconductor light emitting device and the assembly surface may occur. To prevent this, the substrate surface before self-assembly can be treated with a fluid-friendly property.

In an embodiment, when the fluid is a polar material such as water, the substrate surface treatment unit may make the assembly surface of the substrate hydrophilic.

For example, the substrate surface treatment unit may include a plasma generator. Through plasma treatment of the substrate surface, hydrophilic functional groups may be formed on the substrate surface. Specifically, hydrophilic functional groups may be formed on at least one of a barrier rib and a dielectric layer provided in the substrate through plasma processing.

Meanwhile, different surface treatments may be applied to the surface of the barrier rib and the surface of the dielectric layer exposed to the outside by the cell to prevent non-specific binding of the semiconductor light emitting device. For example, a hydrophilic treatment may be performed on the surface of the dielectric layer exposed to the outside by the cell, and the surface treatment may be performed to form a hydrophobic functional group on the surface of the barrier rib. Through this, non-specific binding of the semiconductor light emitting device to the barrier rib surface may be prevented, and the semiconductor light emitting device may be strongly fixed inside the cell.

However, the substrate surface treatment unit is not an essential component in the self-assembly apparatus according to the present invention. The substrate surface treatment unit may not be necessary depending on the constituent materials constituting the substrate.

The substrate on which the surface treatment has been completed by the substrate surface treatment unit is loaded into the substrate chuck 200 .

Next, the substrate chuck 200 will be described.

11 is a conceptual diagram illustrating a first state of the substrate chuck, FIG. 12 is a conceptual diagram illustrating a second state of the substrate chuck, FIG. 13 is a plan view of a first frame provided in the substrate chuck, and FIG. It is a conceptual diagram showing the loaded state.

Referring to the accompanying drawings, the substrate chuck 200 includes a substrate support. In an embodiment, the substrate support unit includes first and second frames 210 and 220 , and a fixing unit 230 . The first and second frames 210 and 220 are vertically disposed with a loaded substrate therebetween, and the fixing unit 230 supports the first and second frames 210 and 220 . The substrate chuck 200 may include a rotating unit 240 , a vertical moving unit, and a horizontal moving unit 250 . 11 , the vertical moving unit and the horizontal moving unit 250 may be configured as one device. Meanwhile, without being limited to the drawings to be described later, the rotating unit and the vertical and horizontal moving units provided in the substrate chuck may be formed as a single device.

In this specification, the first frame 210 is defined as a frame disposed below the substrate in a state where the assembly surface of the substrate S faces the fluid, and the second frame 220 is defined as a frame in which the assembly surface of the substrate S faces the fluid. It is defined as a frame disposed on the upper side of the substrate. Due to the rotation unit 240 , the vertical relationship between the first frame 210 and the second frame 220 may be switched with each other. In the present specification, a state in which the first frame 210 is lower than the second frame 220 is defined as a first state (see FIG. 11 ), and the first frame 210 is the second frame 220 . A state above it is defined as a second state (refer to FIG. 12). The rotating unit 240 rotates at least one of the first and second frames 210 and 220 and the fixing unit 230 to switch from any one of the first and second states to the other. The rotating part 240 will be described later.

The first frame 210 is a frame that comes into contact with the fluid filled in the assembly chamber during self-assembly. Referring to FIG. 14 , the first frame 210 includes a bottom portion 210 ′ and a side wall portion 210 ″.

The bottom portion 210 ′ serves to support the substrate at the lower or upper side of the substrate S when the substrate S is loaded. The bottom portion 210 ′ may be formed in a single plate shape or in a form in which a plurality of members forming a plate shape are combined. Referring to FIG. 13 , the bottom portion 210 ′ has a hole 210 ″″ passing through the central portion. The hole 210''' exposes a substrate, which will be described later, to the outside so that it can be in contact with the fluid. That is, the hole 210 ″″ defines an assembly surface of the substrate. The substrate is loaded so that the four corners of the rectangular substrate span the rim of the hole 210 ″″ of the first frame 210 . Accordingly, the remaining area except for the edge of the substrate overlaps the hole 210 ″″ provided in the first frame 210 . The area of the substrate overlapping the hole 210 ″″ becomes the assembly surface.

Meanwhile, a sealing part 212 and an electrode connection part 213 may be disposed on the edge of the hole 210 ″″.

The sealing part 212 is in close contact with the substrate to prevent the fluid filled in the assembly chamber from penetrating into the first and second frames 210 and 220 during self-assembly. In addition, the sealing part 212 prevents the fluid from penetrating into the assembly electrode 161c and the electrode connection part 213 . To this end, the sealing part 212 should be disposed at a position closer to the hole 210 ″″ than the electrode connection part 213 .

The sealing part 212 is formed in a ring shape, and the material of the sealing part 212 is not specifically limited. The material constituting the sealing portion 212 may be a known sealing material.

The electrode connection part 213 is connected to the assembly electrode formed on the substrate to supply power to the assembly electrode. In an embodiment, the electrode connection unit 213 applies power supplied from the power supply unit 171 illustrated in FIG. 7 to the assembly electrode 161c to form an electric field on the substrate.

Meanwhile, the side wall portion 210 ″ is formed on the edge of the bottom portion 210 ′. The side wall portion 210'' prevents fluid from penetrating into the opposite surface of the assembly surface of the substrate during self-assembly. Specifically, the self-assembly apparatus according to the present invention performs self-assembly in a state in which the substrate is immersed in the fluid. The side wall portion 210 ″ prevents the fluid from penetrating into the opposite surface of the assembly surface of the substrate when the substrate is immersed in the fluid.

To this end, the side wall portion 210 ″ is formed to surround the entire edge of the substrate. The height of the side wall portion 210 ″ should be greater than the depth at which the substrate is immersed in the fluid. The side wall portion 210 ″ prevents the fluid from penetrating the opposite surface of the assembly surface of the substrate, thereby preventing the substrate from being damaged, and allowing the buoyancy force of the fluid to act only on one surface of the substrate. This will be described later.

Meanwhile, the second frame 220 serves to press the substrate from the opposite side of the first frame 210 during self-assembly. Like the first frame 210 , the second frame 220 has a hole penetrating through the center portion. The hole formed in the second frame 220 is formed to be larger than or equal to the hole 210 ″″ formed in the first frame 210 .

The hole formed in the second frame 220 allows the opposite surface of the assembly surface of the substrate to be exposed to the outside. The opposite surface of the assembly surface of the substrate should be exposed to the outside with the same area as the assembly surface or a larger area than the assembly surface. This is because the magnetic field forming unit 300 forms a magnetic field on the opposite side of the assembly surface of the substrate. The opposite surface of the assembly surface of the substrate should be exposed to the outside so that the magnetic field forming unit 300 can be sufficiently close to the substrate.

Meanwhile, the substrate S is loaded between the first and second frames 210 and 220 in the second state. Accordingly, the substrate S is loaded while sliding on one surface of the second frame 220 . A protrusion for guiding an alignment position of the substrate may be formed on at least one of the first and second frames so that the substrate is aligned at a correct position. In an embodiment, referring to FIG. 13 , a protrusion 211 for guiding an alignment position of the substrate S may be formed in the first frame 210 .

On the other hand, when the substrate S is loaded on the second frame 220, at least one of the first and second frames 210 and 220 performs vertical movement so that the first and second frames 210 and 220) to pressurize the substrate. To this end, the substrate chuck 200 may include a frame moving unit disposed on at least one of the fixing unit 230 , the first frame, and the second frame 210 and 220 . At this time, the sealing part 212 presses the substrate (S).

In an embodiment, a frame moving unit for vertically moving the second frame 220 may be disposed on the fixing unit 230 . In the second state of the substrate chuck, when the substrate S is loaded on the second frame 220 , the vertical movement unit moves the second frame 220 upward, so that the substrate S is moved to the second frame 220 . To be strongly fixed between the first and second frames (210 and 220). At this time, the electrode connection part 213 provided in the first frame 210 is connected to the assembly electrode of the substrate S, and the sealing part 212 provided in the first frame 210 is the edge of the substrate S. will pressurize When the substrate chuck is switched to the first state in this state, a shape as shown in FIG. 14 is obtained.

However, the present invention is not limited thereto, and the frame moving unit may be formed to horizontally move any one of the first and second frames 210 and 220 with respect to the other. In this case, the frame moving unit is configured to vertically and horizontally move any one of the first and second frames 210 and 220 with respect to the other. When any one of the first and second frames 210 and 220 can be moved horizontally with respect to the other, the connection portion between the electrode connection part 213 and the assembled electrode can be changed. This can be utilized to detect whether the assembled electrode is defective.

Meanwhile, the rotating part 240 is disposed on one side of the fixing part 230 provided in the above-described substrate chuck 200 . The rotating unit 240 rotates the fixing unit 230 so that the vertical relationship between the first and second frames 210 and 220 can be switched. The substrate chuck 200 is switched from any one of the first and second states to the other by the rotational movement of the rotating part 240 . The rotation speed, rotation degree, rotation direction, and the like of the rotation unit 240 may be controlled by the control unit 172 described with reference to FIG. 7 .

In an embodiment, the substrate chuck 200 is in the second state before loading the substrate S, and the control unit 172 controls the rotation unit 240 to rotate the fixing unit 230 by 180 degrees after the substrate S is loaded. Rotate so that the substrate chuck 200 is switched to the first state.

Meanwhile, a vertical moving part and a horizontal moving part are disposed on one side of the fixing part 230 .

The horizontal moving unit moves at least one of the fixing unit 230 and the first and second frames 210 and 220 so that the assembly surface of the substrate may be aligned in the open position of the assembly chamber after loading the substrate.

The vertical moving unit moves at least one of the fixing unit 230 and the first and second frames 210 and 220 so that a vertical distance between the substrate and the assembly chamber is adjusted. The warpage of the substrate S may be corrected through the vertical movement unit. This will be described later.

In summary, the substrate S is loaded in the substrate chuck 200 in the second state (refer to FIG. 12 ). Thereafter, after the substrate chuck 200 is switched to the first state (refer to FIG. 11 ), it is aligned with the assembly chamber. In this process, the substrate chuck 200 moves vertically and horizontally so that the assembly surface of the substrate S comes into contact with the fluid filled in the assembly chamber. Thereafter, the control unit 172 controls the magnetic field forming unit 300 .

Next, the magnetic field forming unit 300 will be described.

15 is a perspective view of a magnetic field forming unit according to an embodiment of the present invention, FIG. 16 is a side view of a magnetic field forming unit according to an embodiment of the present invention, and FIG. 17 is another magnetic field forming unit according to an embodiment of the present invention. It is a lower side view, and FIG. 18 is a conceptual view showing the trajectories of magnets provided in the magnetic field forming unit according to the present invention.

Referring to the drawings, the magnetic field forming unit 300 includes a magnet array 310 , a vertical moving unit, a horizontal moving unit, and a rotating unit 320 . The magnetic field forming unit 300 is disposed above the assembled electrode to form a magnetic field.

Specifically, the magnet array 310 includes a plurality of magnets 313 . The magnet 313 provided in the magnet array 310 may be a permanent magnet or an electromagnet. The magnets 313 form a magnetic field to guide the semiconductor light emitting devices to the assembly surface of the substrate.

The magnet array 310 may include a support part 311 and a magnet moving part 312 . The support part 311 is connected to the vertical and horizontal movement part 320 .

On the other hand, one end of the magnet moving part 312 is fixed to the support part 311 , and the magnet 313 is fixed to the other end of the magnet moving part 312 . The magnet moving part 312 is made to be stretchable in length. As the magnet moving part 312 expands and contracts, the distance between the magnet 313 and the support part 311 changes.

As shown in the accompanying drawings, the magnet moving unit 312 may be configured to vertically move the magnets 313 arranged in one row at a time. In this case, the magnet moving parts 312 may be arranged for each column of the magnet array.

Alternatively, the magnet moving unit 312 may be disposed as many as the number of magnets provided in the magnet array. Accordingly, a distance between each of the plurality of magnets and the support portion may be adjusted differently.

The plurality of magnet moving parts serves to finely adjust the distance between the magnet 313 and the substrate S, and when the substrate is bent, it serves to uniformly adjust the distance between the magnets 313 and the substrate S . The self-assembly may be performed in a state in which the magnet 313 is in contact with the substrate S, or may be performed in a state in which the magnet 313 is spaced apart from the substrate S by a predetermined distance.

Meanwhile, the horizontal moving unit may include a rotating unit. When self-assembly is performed, the horizontal moving unit provided in the magnetic field forming unit 300 rotates the magnet while moving it in one direction. Accordingly, the magnet array 310 rotates about a predetermined rotation axis and moves along one direction at the same time. For example, referring to FIG. 18 , the magnet 313 provided in the magnet array 310 may move while drawing a trajectory P in which a curved line and a straight line are mixed.

A semiconductor light emitting device may be supplied in a state in which the magnetic field forming unit 300 is close to the substrate S within a predetermined distance.

19 is a conceptual diagram illustrating a state of supplying a semiconductor light emitting device.

Referring to FIG. 19 , a chip supply unit 400 may be disposed in an assembly chamber 500 to be described later. The chip supply unit 400 aligns the substrate S in the assembly chamber 500 and serves to supply the semiconductor light emitting device on the assembly surface of the substrate S. Specifically, the chip supply unit 400 may include a chip receiving unit capable of accommodating a chip, a vertical moving unit, and a horizontal moving unit thereon. The vertical and horizontal moving parts allow the chip accommodating part to move in the fluid filled in the assembly chamber.

A plurality of semiconductor light emitting devices may be loaded in the chip accommodating part. After the substrate is aligned with the assembly chamber, when the magnetic field forming unit 300 is brought closer to the substrate by a predetermined distance or more, a magnetic field of a predetermined strength or more is formed on the assembly surface. When the chip accommodating part approaches the assembly surface within a predetermined distance in this state, the semiconductor light emitting devices loaded in the chip accommodating part come into contact with the substrate. The vertical moving unit provided in the chip supply unit moves the chip receiving unit close to a partial region of the assembly surface of the substrate within a predetermined distance through vertical movement.

After a predetermined time has elapsed, the vertical moving unit provided in the chip supply unit moves the chip receiving unit away from the partial region of the assembly surface of the substrate by a predetermined distance or more through vertical movement. Thereafter, the horizontal moving unit provided in the chip supply unit horizontally moves the chip receiving unit so that the chip receiving unit overlaps a partial region and another region of the assembly surface. Thereafter, the vertical moving unit provided in the chip supply unit moves the chip receiving unit close to the other area within a predetermined distance through vertical movement. By repeating this process, the chip supply unit brings the plurality of semiconductor light emitting devices into contact with the entire area of the assembly surface of the substrate. The self-assembly may be performed in a state in which a plurality of semiconductor light emitting devices are uniformly dispersed and in contact with the entire area of the assembly surface of the substrate.

As described above, there are two major problems in self-assembly. As a second problem, the semiconductor light emitting device cannot be completely uniformly dispersed in the fluid, and the magnetic field formed on the surface of the assembly substrate cannot be perfectly uniform, so the semiconductor light emitting device is concentrated only on a part of the assembly substrate. there is If the above-described chip supply unit 400 is used, the second problem described above can be solved.

However, the present invention is not limited thereto, and the chip supply unit is not an essential component of the present invention. The self-assembly may be performed in a state in which the semiconductor light emitting device is dispersed in a fluid, or in a state in which a plurality of semiconductor light emitting devices are dispersed and brought into contact with the assembly surface of the substrate by a part other than the chip supply unit.

Next, the assembly chamber 500 will be described.

20 is a plan view of an assembly chamber according to an embodiment of the present invention, FIG. 21 is a cross-sectional view taken along line A-A' of FIG. 20, and FIG. 22 is a perspective view of the assembly chamber according to an embodiment of the present invention , FIGS. 23 and 24 are conceptual views illustrating an assembly chamber having a buffer area.

The assembly chamber 500 has a space for accommodating a plurality of semiconductor light emitting devices. The space may be filled with a fluid, and the fluid may include water as an assembly solution. Accordingly, the assembly chamber 500 may be a water tank, and may be configured as an open type. However, the present invention is not limited thereto, and the assembly chamber 500 may be of a closed type in which the space is a closed space.

The substrate S is disposed in the assembly chamber 500 so that the assembly surface on which the semiconductor light emitting devices 150 are assembled faces downward. For example, the substrate S is transferred to the assembly position by the substrate chuck 200 .

At this time, the assembly surface of the substrate S faces the bottom of the assembly chamber 500 in the assembly position. Accordingly, the assembly surface is oriented in the direction of gravity. The assembly surface of the substrate S is disposed to be immersed in the fluid in the assembly chamber 500 .

In one embodiment, referring to FIGS. 20 to 22 , the assembly chamber 500 may be divided into two regions. Specifically, the assembly chamber 500 may be divided into an assembly area 510 and an inspection area 520 . In the assembly region 510 , the semiconductor light emitting device disposed in the fluid is assembled into the substrate S while the substrate S is immersed in the fluid.

However, the present invention is not limited thereto, and the assembly chamber 500 may be divided into a plurality of regions. Specifically, the assembly chamber 500 may be divided into a plurality of assembly areas and inspection areas. In this case, different types of semiconductor light emitting devices may be assembled in each assembly region. For example, the assembly chamber 500 may have three assembly areas. Blue, red, and green semiconductor light emitting devices may be sequentially assembled in each assembly region.

In the present specification, for convenience of description, the structure of the assembly chamber having one assembly area and one inspection area will be described, but the present disclosure is not limited thereto, and the assembly chamber may include a plurality of assembly areas and a plurality of inspection areas. have.

In the inspection area 520 , the self-assembly of the self-assembled substrate S is performed. Specifically, after the substrate S is assembled in the assembly region, it is transferred to the inspection region through the substrate chuck.

On the other hand, in the case of a plurality of assembly areas, when self-assembly in one assembly area is completed, the substrate chuck transfers the substrate to another assembly area.

When a substrate is transferred to another area within the assembly chamber, the substrate is preferably transferred submerged in a fluid. Specifically, the assembly area 510 and the inspection area 520 may be filled with the same fluid. When the substrate S disposed in the assembly region 510 is taken out of the fluid, the pre-assembled semiconductor light emitting device may be separated from the substrate due to surface energy between the fluid and the semiconductor light emitting device. For this reason, it is preferable that the substrate is transferred in a state immersed in the fluid.

On the other hand, when the boundary between regions in the assembly chamber is removed to transfer the substrate to different regions in a state in which the substrate is immersed in the fluid, a problem arises that the semiconductor light emitting device floating in the fluid moves to an unwanted region. For example, the red semiconductor light emitting device may be in a floating state in an assembly area for assembling the red semiconductor light emitting device among the plurality of assembly areas. In this state, when there is no boundary between the assembly regions, the red semiconductor light emitting device can freely move to another assembly region. The red semiconductor light emitting device may move to another assembly area and cause misassembly.

As described above, the regions provided in the assembly chamber should be isolated from each other, and when transferring the substrates to different regions, the substrates should be kept submerged in the fluid. Conventionally, as shown in FIGS. 23 and 24 , a structure having buffer regions B, B1 and B2 between different regions has been used, but the size of the assembly chamber is unnecessary due to the buffer regions B, B1 and B2. A growing problem arises. In addition, since the buffer areas B, B1, and B2 must be disposed between all areas, as the number of areas provided in the assembly chamber increases, the number of buffer areas also increases.

The present invention provides an assembly chamber that minimizes the size of the assembly chamber, isolates regions provided in the assembly chamber from each other, and enables movement between regions while a substrate is immersed in a fluid.

Hereinafter, the structure of the assembly chamber will be described in detail.

25 is a conceptual diagram illustrating an assembly chamber including a gate part, FIG. 26 is an enlarged view of a gate part provided in the assembly chamber according to the present invention, and FIG. It is a conceptual diagram, and FIG. 28 is a conceptual diagram emphasizing the gate part according to the present invention.

Referring to the drawings, the assembly chamber according to the present invention includes a bottom portion 501 , a side wall portion 502 , and a partition wall portion 530 .

The bottom part 501 is formed in a plate shape, and components constituting the assembly chamber may be disposed in some areas of the bottom part 501 .

In an embodiment, a light transmitting part 503 may be disposed on a part of the bottom part 501 . Specifically, the bottom part 501 may be made of an opaque material. A portion of the bottom portion 501 may be formed to allow light transmission so that the inside of the assembly chum can be observed from the outside of the assembly chamber. To this end, a hole penetrating through the bottom part 501 may be formed in the bottom part 501 . A light transmitting part 503 is fastened to the edge of the hole.

Since the assembly chamber is filled with a fluid, when there is a gap between the bottom part 501 and the light transmitting part 503 , the fluid may escape through the gap. Therefore, a complete sealing must be made between the bottom part 501 and the light transmitting part 503 . To this end, a sealing part may be disposed between the bottom part 501 and the light transmitting part 503 .

The light transmitting part 503 may be disposed for each area provided in the assembly chamber. That is, the light transmitting part 503 may be provided as many as the number of regions provided in the assembly chamber. The self-assembly situation can be observed from the outside of the assembly chamber through the light-transmitting part 503 .

Meanwhile, a plurality of holes may be formed in the bottom portion 501 for arranging components. A seal must be maintained between the disposed components and the bottom 501 to prevent fluid from escaping into the holes.

Meanwhile, a side wall part 502 is formed on the bottom part 501 . The side wall part 502 is formed at a predetermined height on the bottom part 501 and is disposed on the edge of the bottom part 501 . A fluid is filled in the space enclosed by the bottom part 501 and the side wall part 502 . The fluid should not escape between the bottom part 501 and the side wall part 502 . To this end, the bottom part 501 and the side wall part 502 may be integrally manufactured or completely coupled through welding or the like. However, the present invention is not limited thereto, and the coupling method between the bottom part 501 and the side wall part 502 is sufficient as long as the coupling method prevents the fluid from escaping between the bottom part 501 and the side wall part 502 .

Meanwhile, a plurality of holes may be formed in the sidewall portion 502 for arranging components. A seal must be maintained between the disposed components and the sidewall portion 502 to prevent fluid from escaping into the holes.

In the space enclosed by the bottom part 501 and the side wall part 502, not only the fluid but also other components are disposed. Specifically, the partition wall 530 is disposed in the space surrounded by the bottom 501 and the sidewall 502 .

The partition wall part 530 is formed on the bottom part 501, and from one of a plurality of inner surfaces provided in the side wall part 502 to the other inner surface facing the one of the plurality of inner surfaces. formed to extend to

A plurality of regions provided in the assembly chamber are divided based on the partition wall 530 . In an embodiment, when the assembling chamber has four regions and the four regions are arranged in a line, a total of three partition walls should be arranged in the assembly chamber. However, the present invention is not limited thereto, and the shape of the partition wall part 530 may vary according to an arrangement method of the plurality of regions.

On the other hand, when the partition wall part 530 is formed to have the same height as the side wall part 502, a plurality of regions can be completely isolated, but in order for the substrate to be transferred to different regions, it must be separated from the fluid at least once. do.

On the other hand, when at least a part of the partition wall part 530 is formed to have a height lower than the side wall part 502 (more precisely, a height lower than the level of the fluid), it is necessary to separate from the fluid when the substrate is transferred to different areas. However, as the fluids filled in different regions are mixed, the semiconductor light emitting device floating in the fluid penetrates into the unwanted region.

In order to solve the above two problems, at least a portion of the partition wall part 530 is made to have a vertical height with respect to the bottom part 501 variable. To this end, the partition wall part 530 includes a frame part 531 and a gate part 532 .

The frame part 531 is fixed to the bottom part 501 . Specifically, the frame part 531 is fixed on the bottom part 501 so that the fluid cannot pass between the bottom part 501 and the frame part 531 . The fixing means of the frame part 531 is not specifically limited.

On the other hand, a portion of the frame portion 531 is fixed to the inner surface of the side wall portion 502 and the other inner surface of the side wall portion 502 facing the inner surface. A part of the frame part 531 is fixed on the inner surface of the side wall part 502 so that a fluid cannot pass between the side wall part 502 and the frame part 531 . The fixing means of the frame part 531 is not specifically limited.

Meanwhile, a portion of the frame portion 531 is formed to have a height lower than that of the sidewall portion 502 with respect to the bottom portion 501 . Specifically, the frame part 531 may include a recess part formed in the direction of the bottom part 501 . The recess portion is formed in the central portion of the frame portion 531 , and a height of the frame portion 531 at a position where the recess portion is formed is lower than that of the sidewall portion 502 . Meanwhile, the height of the frame portion 531 at the position where the recess portion is not formed may be the same as the height of the sidewall portion 502 .

Since the substrate passes through the recess when moving between regions, the recess must be formed to a depth sufficient to allow movement between regions while the substrate is immersed in a fluid.

The gate part 532 is made to be movable along one surface of the frame part 531 . Specifically, the gate part 532 is configured to be vertically movable with respect to the bottom part 501 . As the gate part 532 vertically moves, an area overlapping the recess part changes. When the gate part 532 reaches a position (hereinafter, referred to as a first height) furthest from the bottom part 501 within the driving range of the gate part 532 , the gate part 532 is moved It can be completely overlapped with the recess. At this time, the gate part 532 is in close contact with one surface of the frame part 531 .

In order to attach the gate part 532 to the frame part 531 , a sealing part 533 may be provided on one surface of the gate part 532 in contact with the frame part 531 . When the gate part 532 is in close contact with the frame part 531 , the fluid cannot pass between the gate part 532 and the frame part 531 . The height of the barrier rib part 530 is increased due to the gate part 532 .

On the contrary, when the gate part 532 descends from the first height and reaches a position closest to the bottom part 501 (second height) within the driving range of the gate part 532 , the gate part 532 . The portion 532 may not overlap the recess portion or may overlap only a minimum area. In this state, the gate part 532 does not need to be in close contact with the frame part 531 . The height of the barrier rib part 530 is reduced due to the gate part 532 .

The gate part 532 moves from one of the first and second heights to the other through vertical movement. In an embodiment, the gate part 532 may vertically move while being spaced apart from the frame part 531 by a predetermined distance. To this end, the gate unit 532 includes not only a vertical movement unit capable of performing vertical movement with respect to the bottom portion 501 , but also a horizontal movement unit capable of moving in a horizontal direction to the floor portion 501 . can do.

For example, when the gate part 532 changes its position from the second height to the first height, the gate part 532 is spaced apart from the frame part 531 by a predetermined distance at the second height. In this state, the gate part 532 vertically moves to the first height. Thereafter, the gate part 532 is in close contact with the frame part 531 through horizontal movement with respect to the bottom part 501 .

For example, when the gate part 532 changes its position from a first height to a second height, the gate part 532 is in close contact with the frame part 531 at the first height. In this state, the gate part 532 is spaced apart from the frame part 531 by a predetermined distance through horizontal movement with respect to the bottom part 501 . Thereafter, the gate part 532 vertically moves to the second height.

In this way, the present invention can prevent the sealing part 533 disposed on the gate part 532 from being damaged when the gate part 532 is vertically moved repeatedly. However, the present invention is not limited thereto, and vertical movement may be performed while the gate part 532 is in close contact with the frame part 531 . In this case, the gate part 532 may not include a horizontal movement means.

29 and 30 are conceptual views illustrating a change in height of a partition wall portion.

29 , during self-assembly, the gate part 532 maintains a state in close contact with the frame part 531 at a first height. Accordingly, since the height of the partition wall part 530 is equal to the height of the side wall part 502 , the fluid filled in the assembly area does not flow into the inspection area. Accordingly, it is possible to prevent the semiconductor light emitting device from being lost to the inspection area during self-assembly.

Meanwhile, as shown in FIG. 30 , when the substrate S is transferred, the gate part 532 descends from the first height to remove the boundary between the assembly area 510 and the inspection area 520 . Accordingly, the substrate chuck can transfer the substrate from the assembly area to the inspection area only by horizontal movement without a separate vertical movement.

As described above, in the present invention, the height of the barrier rib part 530 is changed through vertical movement of the gate part 532 . Through this, the present invention allows the different regions provided in the assembly chamber to be completely separated, or to move the different regions while the substrate is immersed in the fluid.

Meanwhile, various components may be disposed in the assembly chamber according to the present invention.

31 to 33 are conceptual views emphasizing the components provided in the assembly chamber according to the present invention.

Referring to FIG. 31 , a water level sensor 540 capable of sensing a level of a fluid filled in the assembly chamber may be disposed in the assembly chamber. In an embodiment, an ultrasonic sensor capable of sensing a fluid level may be disposed in the assembly chamber.

Through the water level sensor 540, when the fluid is lost during the process, the fluid may be additionally supplied to maintain a constant level of the fluid. In addition, when the fluid is excessively filled, the level of the fluid can be kept constant by removing the fluid.

To this end, referring to FIG. 32 , the assembly chamber according to the present invention may include a fluid supply unit 550a for supplying a fluid and a fluid discharge unit 550b for discharging the fluid. In an embodiment, the fluid supply part 550a may be disposed on the sidewall part 502 , and the fluid discharge part 550b may be disposed on the bottom part 501 . Meanwhile, each of the fluid supply part 550a and the fluid discharge part 550b may be disposed in each of the regions provided in the assembly chamber.

Meanwhile, referring to FIG. 33 , a sonicator 550 for preventing aggregation of semiconductor light emitting devices may be disposed in the assembly chamber. The sonicator 550 may prevent a plurality of semiconductor light emitting devices from aggregating with each other through vibration.

As described above, according to the present invention, since the height of the partition wall dividing the plurality of regions provided in the assembly chamber can be adjusted, it is possible to prevent the semiconductor light emitting devices floating in each region from mixing with each other, While the substrate is submerged in the fluid, the respective regions can be freely moved.

Claims (10)

An assembly chamber configured to contain a fluid, the assembly chamber comprising:
bottom;
a side wall portion formed at a predetermined height on the bottom portion and disposed to surround the bottom portion; and
It is formed on the bottom portion and includes a partition wall portion formed to extend from the inner surface of any one of the plurality of inner surfaces provided on the side wall to the inner surface of the other facing the one,
The partition wall portion,
a frame part fixed to the bottom part; and
and a gate part configured to be movable along one surface of the frame part;
The assembly chamber, characterized in that at least a portion of the partition wall, the gate portion is variable vertical movement so that a vertical height is changed based on the bottom portion. delete According to claim 1,
The gate part,
Assembly chamber, characterized in that the transition from any one of a first state located at a first height to the bottom portion and a second state located at a second height lower than the first height to another. 4. The method of claim 3,
The gate part,
Assembly chamber, characterized in that in close contact with the frame portion in the first state. 5. The method of claim 4,
The gate part,
Assembly chamber, characterized in that after being spaced a predetermined distance from the frame part in a state in close contact with the frame part, it is switched to the second state. 5. The method of claim 4,
The assembly chamber further comprising a sealing portion disposed on one surface of the gate portion in close contact with the frame portion. According to claim 1,
Assembly chamber, characterized in that it further comprises a water level sensor configured to sense the level of the received fluid. 8. The method of claim 7,
a fluid supply part disposed on at least one of the bottom part and the side wall part and configured to supply a fluid to the assembly chamber; and
and a fluid discharge part disposed on at least one of the bottom part and the side wall part and configured to discharge the accommodated fluid to the outside. The method of claim 1,
and a sonicator disposed on at least one of the bottom portion and the sidewall portion, the sonicator vibrating the accommodated fluid at a predetermined frequency. According to claim 1,
Assembly chamber, characterized in that at least a part of the bottom part is made of a light-transmitting layer.

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