KR102227857B1 - Horizontal Electric Field type Liquid Crystal Display Device and Method of Manufacturing Common Electrodes and Pixel Electrodes thereof - Google Patents

Abstract

The present invention relates to a liquid crystal display device capable of forming a sufficient horizontal electric field in a liquid crystal layer even with a low driving voltage and preventing light leakage. A first substrate and a second substrate disposed opposite to each other with a liquid crystal layer interposed therebetween , First and second structures on the first substrate, and upper electrodes and lower electrodes disposed on upper and lower surfaces of each of the first and second structures to be spaced apart from each other. The first and second structures are disposed parallel to each other on the first substrate. Each upper electrode and each lower electrode are electrically connected to each other at one end of each of the first and second structures.

Description

A horizontal electric field type liquid crystal display device and a method of manufacturing a common electrode and a pixel electrode thereof TECHNICAL FIELD [0002]

The present invention relates to a horizontal electric field type liquid crystal display and a method of manufacturing a common electrode and a pixel electrode thereof.

With the recent development of information technology, the market for display devices, which is a medium for connecting users and information, is growing. Accordingly, a liquid crystal display (LCD), an organic light emitting diode display (OLED), a field emission display (FED), and a plasma display panel (PDP) ), etc., the use of Flat LPnel Display (FPD) is increasing.

Among them, a liquid crystal display device is widely used in the field of optical data processing because it can realize high resolution and can not only be miniaturized but also enlarged. The liquid crystal display device is driven by using the optical anisotropy and polarization properties of the liquid crystal. Liquid crystals have directionality in the arrangement of molecules, and the direction of molecular arrangements can be controlled by artificially applying an electric field to the liquid crystals. Therefore, if the molecular arrangement direction of the liquid crystal is arbitrarily adjusted, the molecular arrangement of the liquid crystal changes, and light is refracted in the molecular arrangement direction of the liquid crystal due to optical anisotropy, and image information can be expressed. That is, a liquid crystal display device is a type of display device that displays an image by adjusting the light transmittance of a liquid crystal using an electric field.

Such a liquid crystal display device is roughly classified into a vertical electric field type and a horizontal electric field type according to the direction of an electric field driving the liquid crystal.

In the vertical electric field type liquid crystal display, a common electrode formed on an upper substrate and a pixel electrode formed on a lower substrate are disposed to face each other, and then the liquid crystal is driven in a twisted nemastic (TN) mode using a vertical electric field formed therebetween. Such a vertical electric field type liquid crystal display device has an advantage of having a large aperture ratio, but has a disadvantage of having a viewing angle of about 90 degrees.

In a horizontal electric field type liquid crystal display, pixel electrodes and common electrodes are arranged side by side on a lower substrate, and then the liquid crystal is driven in IPS (In Plane Switching) mode or FFS (Fringe Field Switching) mode using a horizontal electric field formed between them. . Such a horizontal electric field type liquid crystal display has an advantage of having a wide viewing angle of 170 degrees or more, and has an advantage of having a fast response speed because it is switched in a horizontal state.

However, in a conventional horizontal electric field type liquid crystal display device, a weak horizontal electric field is formed in an upper region of the liquid crystal layer far from the position where the pixel electrode and the common electrode are formed, and thus the liquid crystal of the upper layer of the liquid crystal layer is not sufficiently driven. Since such insufficient driving of the liquid crystal has a problem that causes a defect in the display device, a conventional horizontal electric field type liquid crystal display device has a problem that a high driving voltage is required to form a sufficient horizontal electric field in the liquid crystal layer.

The present invention is to solve the above-described problems, and provides a liquid crystal display device capable of forming a sufficient horizontal electric field in a liquid crystal layer without increasing a driving voltage and preventing light leakage, and a method of manufacturing a common electrode and a pixel electrode thereof. It is to do.

In order to achieve the above object, the horizontal electric field type liquid crystal display device of the present invention includes a first substrate and a second substrate disposed opposite to each other with a liquid crystal layer therebetween, first and second structures on the first substrate, and the first and second substrates. 2 It includes upper electrodes and lower electrodes disposed on the upper and lower surfaces of each of the structures and spaced apart from each other. The first and second structures are disposed parallel to each other on the first substrate. Each upper electrode and each lower electrode are connected to each other at one end of each of the first and second structures.

In the above configuration, the first voltage supplied to the upper and lower electrodes of the first structure and the second voltage supplied to the upper and lower electrodes of the second structure are set differently to form a horizontal electric field in the liquid crystal layer.

The horizontal electric field type liquid crystal display device of the present invention also includes a wiring and a thin film transistor layer in which wirings and thin film transistors are disposed on a first substrate, a first insulating film covering the wiring and the thin film transistor layer, and each of the first and second structures. At one end, a second insulating layer is further included to cover a partial region of an upper end of the first and second structures and a lower sidewall, and expose one end of the lower electrode. The upper electrode may extend from the first and second structures, respectively, and may be connected to one end of the lower electrode exposed through the second insulating layer.

The horizontal electric field type liquid crystal display device of the present invention also includes a wiring and a thin film transistor layer in which wirings and thin film transistors are disposed on a first substrate, a first insulating film covering the wiring and the thin film transistor layer, and each of the first and second structures. The second insulating layer may further include a second insulating layer having a width smaller than the width of the upper ends of the first and second structures at one end, and exposing upper ends of the first and second structures and both sides of the lower electrode. The upper electrode may extend from upper ends of the first and second structures, respectively, and may be connected to both sides of the lower electrode exposed through the second insulating layer.

In the above configuration, the wirings include a gate line and a data line crossing each other, and a common line arranged parallel to the gate line. The upper electrode extending from the first structure is connected to one of the common line and the thin film transistor exposed through the first insulating film, and the upper electrode extending from the second structure is the common line and the thin film transistor exposed through the first insulating film. It can be connected to the other of either.

Further, the width of each of the upper electrode and the lower electrode may be the same as the width of each of the upper ends of the first and second structures.

In order to achieve the above object, the horizontal electric field type liquid crystal display device of the present invention includes a first substrate and a second substrate disposed opposite to each other at predetermined intervals, wirings disposed on the first substrate, and thin film transistors. Between the first and second structures disposed parallel to each other on the first insulating layer covering the layer, the wiring, and the thin film transistor layer, the first upper electrode disposed on the first upper structure, and the first lower structure and the first insulating layer A first lower electrode disposed at a position opposite to the first upper electrode, a second upper electrode disposed on the second upper structure, and a second upper electrode disposed between the second lower structure and the first insulating layer, And a second lower electrode disposed at a position opposite to the second lower electrode. The first structure includes a first upper structure having a first width and a first lower structure extending from the first upper structure and having a second width less than the first width. The second structure includes a second upper structure having a first width and a second lower structure extending from the second upper structure and having a second width. The first upper electrode and the first lower electrode are connected to each other at one end of the first structure, and the second upper electrode and the second lower electrode are connected to each other at one end of the second structure.

The horizontal electric field type liquid crystal display device of the present invention has the same width as the first and second upper structures, and includes partial regions of the first and second upper structures, sidewalls of the first and second lower structures, and the first and second upper structures. 2 It further includes a second insulating layer covering some areas of the lower electrodes. The first upper electrode extends from the first upper structure and is connected to one end of the first lower electrode exposed through a second insulating layer. The second upper electrode extends from the second upper structure and is connected to one end of the second lower electrode exposed through the second insulating layer.

The horizontal electric field type liquid crystal display device of the present invention has a width narrower than that of the first and second upper structures, and includes partial regions of the first and second upper structures, sidewalls of the first and second lower structures, and the first And a second insulating layer covering some regions of the second lower electrodes. The first upper electrode extends from the first upper structure and is connected to both sides of the first lower electrode exposed through the second insulating layer. The second upper electrode extends from the second upper structure and is connected to both sides of the second lower electrode exposed through the second insulating layer.

In addition, the method of manufacturing the common electrode and the pixel electrode of the horizontal electric field type liquid crystal display device of the present invention for achieving the above object includes first to fourth mask processes.

In the first mask process, a first conductive layer, an organic insulating layer, and a first photoresist are sequentially stacked on the first insulating layer, and then a first photoresist pattern is formed through a photolithography process using a first mask. The organic insulating layer exposed through the first photoresist pattern is removed to form first and second T-shaped structures disposed in parallel with each other and having an undercut structure.

In the second mask process, after laminating a second photoresist on the first conductive layer on which T-type first and second structures are formed, the first and second substructures are formed through a photolithography process using a second mask. A first lower electrode disposed under the first structure by forming a second photoresist pattern filled in the undercut portion, and patterning the first conductive layer exposed through the second photoresist pattern; and 2 A second lower electrode disposed under the lower structure is formed.

In the third mask process, after laminating a second insulating material on the first insulating layer on which the first and second structures and the first and second lower electrodes are formed, the photolithography process is performed using a third mask. A third photoresist pattern is formed to expose areas other than one end of the first lower electrode and the second lower electrode, and the second insulating material exposed through the third photoresist pattern is removed, and the first and A second insulating layer is formed to cover partial regions of upper regions of the second structures and the undercut region, and to expose portions of the first and second lower electrodes.

In the fourth mask process, a second conductive layer is stacked on the entire structure on which the second insulating layer is formed, and then a second conductive layer between the first lower electrode and the second lower electrode through a photolithography process using a fourth mask. A fourth photoresist pattern is formed to expose the first and second upper electrodes respectively disposed on the first and second structures by removing the second conductive layer exposed through the fourth photoresist pattern. To form. The first upper electrode extends from the upper end of the first structure and is connected to the first lower electrode exposed through the second insulating layer, and the second upper electrode extends from the upper end of the second structure to the second insulating layer. It is connected to the second lower electrode exposed through.

According to the horizontal electric field type liquid crystal display device according to the present invention, the common electrode is divided into an upper common electrode and a lower common electrode by the first and second structures, and the pixel electrode is divided into an upper pixel electrode and a lower pixel electrode. In order to form a uniform electric field over the entire layer, it is possible to obtain an effect that it is not necessary to drive the common electrode and the pixel electrode with high voltage.

In addition, since the electric fields of the upper and lower layers of the liquid crystal layer are uniformly formed, it is possible to obtain an effect of removing light leakage due to poor behavior of the liquid crystal located on the upper layer of the liquid crystal layer due to the electric field non-uniformity.

In addition, since the first and second lower structures have an undercut structure, the lower common electrode and the lower pixel electrode are exposed to the outside of the first and second structures, respectively. It is possible to connect to and collectively, so that the effect of increasing the space utilization can be obtained.

1 is a block diagram schematically showing a horizontal electric field type liquid crystal display according to embodiments of the present invention;
FIG. 2 is an equivalent circuit diagram showing a pixel area shown in FIG. 1;
3 is a schematic cross-sectional view of a horizontal electric field display device according to a first embodiment of the present invention;
4 is a cross-sectional view showing a region to which upper common electrodes and lower common electrodes are connected in a horizontal electric field display device according to a first embodiment of the present invention;
5 is a cross-sectional view illustrating a region where upper pixel electrodes and lower pixel electrodes are connected in a horizontal electric field display device according to a first embodiment of the present invention;
6A is a cross-sectional view showing a first mask process for manufacturing a common electrode and a pixel electrode of a horizontal electric field display device according to a first embodiment of the present invention;
6B and 6C are cross-sectional views illustrating a second mask process for manufacturing a common electrode and a pixel electrode of the horizontal electric field display device according to the first embodiment of the present invention.
6B is a cross-sectional view illustrating a second mask process for manufacturing a common electrode and a pixel electrode of the horizontal electric field display device according to the first embodiment of the present invention;
6C is a cross-sectional view showing a third mask process for manufacturing a common electrode and a pixel electrode of the horizontal electric field display device according to the first embodiment of the present invention;
6D and 6E are cross-sectional views illustrating a third mask process for manufacturing a common electrode and a pixel electrode of the horizontal electric field display device according to the first embodiment of the present invention.
6F and 6G are cross-sectional views illustrating a fourth mask process for manufacturing a common electrode and a pixel electrode of the horizontal electric field display device according to the first embodiment of the present invention;
7 is a schematic cross-sectional view of a horizontal electric field display device according to a second embodiment of the present invention;
8A is a cross-sectional view showing a side surface of a region to which upper common electrodes and lower common electrodes are connected in a horizontal electric field display device according to a second embodiment of the present invention;
8B is a cross-sectional view illustrating a front view of a region to which upper common electrodes and lower common electrodes are connected in a horizontal electric field type display device according to a second embodiment of the present invention;
9A is a cross-sectional view illustrating a side surface of a region to which upper pixel electrodes and lower pixel electrodes are connected in a horizontal electric field display device according to a second exemplary embodiment of the present invention;
9B is a cross-sectional view illustrating a front view of a region to which upper pixel electrodes and lower pixel electrodes are connected in a horizontal electric field type display device according to a second exemplary embodiment of the present invention;
10A is a cross-sectional view showing a first mask process for manufacturing a common electrode and a pixel electrode of a horizontal electric field display device according to a second embodiment of the present invention;
10B and 10C are cross-sectional views illustrating a second mask process for manufacturing a common electrode and a pixel electrode of a horizontal electric field display device according to a second embodiment of the present invention;
10D and 10E are cross-sectional views illustrating a third mask process for manufacturing a common electrode and a pixel electrode of a horizontal electric field display device according to a second embodiment of the present invention;
10F and 10G are cross-sectional views illustrating a fourth mask process for manufacturing a common electrode and a pixel electrode of a horizontal electric field display device according to a second embodiment of the present invention;
11 is a graph showing transmittance of a conventional horizontal electric field type liquid crystal display and a horizontal electric field type liquid crystal display according to embodiments of the present invention.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. The same reference numbers throughout the specification mean substantially the same elements. In the following description, when it is determined that a detailed description of a known function or configuration related to the present invention may unnecessarily obscure the subject matter of the present invention, a detailed description thereof will be omitted.

First, a horizontal electric field type liquid crystal display device according to embodiments of the present invention will be schematically described with reference to FIGS. 1 and 2. 1 is a block diagram schematically illustrating a horizontal electric field type liquid crystal display device according to exemplary embodiments, and FIG. 2 is an equivalent circuit diagram illustrating a pixel area SP shown in FIG. 1.

Referring to FIG. 1, a liquid crystal display device according to an exemplary embodiment of the present invention includes a thin film transistor array (TFTA) and a color filter array (CFA) disposed opposite to each other and bonded together, and liquid crystal molecules filled in a space positioned therebetween. It includes a liquid crystal layer (LC) made of.

The thin film transistor array TFTA includes a first substrate SUB1, gate lines GL formed on the first substrate SUB1, data lines DL crossing the gate lines GL, and gate lines. The thin film transistors TFT formed for each cell region defined by the intersection of the GL and the data lines DL, the pixel electrodes P and the pixel electrodes P respectively connected to the thin film transistors TFT And a common electrode COM that is alternately disposed, a common line CL connected to the common electrodes COM, a storage capacitor Cst, and the like.

The common line CL is formed in parallel with the gate line GL with a cell region therebetween, and supplies a common voltage, which is a reference voltage for driving the liquid crystal molecules LC, to the common electrode COM.

The thin film transistor TFT supplies a data signal from the data line DL to the pixel electrode P in response to a gate signal from the gate line GL. A horizontal electric field is formed between the pixel electrode P supplied with the data signal through the thin film transistor TFT and the common electrode COM supplied with the reference voltage through the common line CL. Due to this horizontal electric field, the liquid crystal molecules of the liquid crystal layer LC arranged between the thin film transistor array (TFTA) and the color filter array (CFA) rotate due to dielectric anisotropy, or the shape of the liquid crystal molecules is elongated around the central axis of the liquid crystal molecules. It stretches and changes into an ellipse An image is realized by changing the transmittance of light passing through the pixel area according to the degree of rotation of the liquid crystal molecules or the degree of change to an elliptical shape.

The color filter array CFA includes a second substrate SUB2, a black matrix BM and a color filter CF disposed on the second substrate SUB2, and a color filter CF and a black matrix BM. It includes an overcoat layer OC for planarizing the upper substrate SUB2. The black matrix BM prevents color mixing between neighboring color filters CF, and at the same time, when the pixel electrode P and the common electrode COM become equipotential (i.e., in the case of black driving), the data line DL ) And the gate line GL to prevent the increase in black luminance due to driving of the liquid crystal. The overcoat layer OC may be omitted.

Referring to FIG. 2, one pixel region includes a switching transistor TFT, a storage capacitor Cst, and a liquid crystal cell Clc. The gate electrode of the switching transistor TFT is connected to the gate line GL, and the source electrode is connected to the data line DL1.

The storage capacitor Cst has one end connected to the drain electrode of the thin film transistor TFT and the other end connected to the common voltage line Vcom.

Next, a horizontal electric field type liquid crystal display according to a first embodiment of the present invention will be described in more detail with reference to FIG. 3. 3 is a schematic cross-sectional view of a horizontal electric field display device according to a first embodiment of the present invention.

Referring to FIG. 3, a liquid crystal display device according to a first embodiment of the present invention includes a thin film transistor array (TFTA) and a color filter array (CFA) disposed opposite to each other and bonded together, and liquid crystal molecules filled in a space positioned therebetween. It includes a liquid crystal layer (LC) made of. Since the configurations of the thin film transistor array (TFTA), the color filter array (CFA) and the liquid crystal layer (LC) shown in FIG. 3 are the same as those shown in FIG. 1 except for the common electrode and the pixel electrode, only the differences will be described. I will do it.

Gate lines GL, common lines CL, data lines DL, and thin film transistors TFT are disposed on the first substrate SUB of the thin film transistor array TFTA, as shown in FIG. 1 The formed wiring and the thin film transistor layer WTL are disposed. The wiring and the thin film transistor layer WTL are covered with the first insulating layer INS1.

On the first insulating layer INS1, a plurality of common electrodes COM and a plurality of pixel electrodes P are alternately disposed in each pixel area. The common electrodes COM are connected to the common line CL through a first contact hole CH1 formed in the first insulating layer INS1, and the pixel electrodes P are formed in the first insulating layer INS1. Each is connected to the thin film transistor TFT through the contact hole CH2 (see FIGS. 4 and 5).

Each common electrode COM is on the lower common electrode LCOM disposed on the first insulating layer INS1, the first structure S1, and the first structure S1 disposed on the lower common electrode LCOM. It includes an upper common electrode UCOM that is positioned.

The lower common electrodes LCOM of the common electrodes COM are disposed in parallel with each other at predetermined intervals in the pixel area on the first insulating layer INS1. Each lower common electrode LCOM has a first width.

The first structure S1 includes a first upper structure US1 having a first width substantially the same as that of the lower common electrode LCOM, and a second upper structure US1 extending downward from the first upper structure US1 and smaller than the first width. It includes a first lower structure LS1 having a width. The first upper structure US1 is disposed on the lower common electrode LCOM. The first upper structure US1 and the first lower structure LS1 are integrally formed to form a substantially T-shaped structure.

Each upper common electrode UCOM of the common electrodes COM is disposed on the first upper structure US1. Each of the upper common electrodes UCOM has the same width as each of the lower common electrodes LCOM.

Since the upper common electrodes UCOM and the lower common electrodes LCOM are connected to each other at one end and also connected to the common line CL, the upper common electrodes UCOM and the lower common electrodes ( LCOM) are electrically connected to each other.

Hereinafter, a connection between the upper common electrodes UCOM and the lower common electrodes LCOM and the common line will be described in more detail with reference to FIG. 4. 4 is a cross-sectional view illustrating a region to which upper common electrodes UCOM and lower common electrodes LCOM are connected in a horizontal electric field display device according to an exemplary embodiment of the present invention.

Referring to FIG. 4, the common electrodes COM of each pixel region are at positions where the upper common electrodes UCOM and the lower common electrodes LCOM are connected, that is, T at one end of the common electrodes COM. A second insulating layer INS2 covering a partial region of the first upper structure US1 of the shaped first structure S1, a side wall of the first lower structure LS1, and a partial region of the first insulating layer INS1 is formed. Include more. Accordingly, the upper common electrode UCOM is disposed on the first upper structure US1 as well as the second insulating layer INS2 and the lower common electrode LCOM exposed to the outside of the second insulating layer INS2. Accordingly, the upper common electrode UCOM and the lower common electrode LCOM in each pixel region are connected to each other at one end of each common electrode COM, and the first contact hole CH1 formed in the first insulating layer INS1 is formed. Through the wiring and the common line (CL) formed in the thin film transistor layer (WTL) can be connected.

Meanwhile, each pixel electrode P includes a lower pixel electrode LP disposed on the first insulating layer INS1, a second structure S2 disposed on the lower pixel electrode LP, and a second structure S2. And an upper pixel electrode UP positioned thereon.

Each of the lower common electrodes LP of the pixel electrodes P is disposed in a pixel region on the first insulating layer INS1 with a predetermined distance from the lower common electrode LCOM, and alternately disposed with the common electrode. Each lower pixel electrode LP has a first width substantially equal to that of the lower common electrode LCOM.

The second structure S2 includes a second upper structure US2 having a first width substantially the same as that of the lower pixel electrode LP, and a second upper structure US2 extending downward from the second upper structure US2 and smaller than the first width. It includes a second lower structure LS2 having a width. The second upper structure US2 is disposed on the lower pixel electrode LP. The second upper structure US2 and the second lower structure LS2 are integrally formed to form a substantially T-shaped structure.

Each upper pixel electrode UP of the pixel electrodes P is disposed on the second upper structure US2. Each of the upper pixel electrodes UP has the same width and size as each of the lower pixel electrodes LP.

Since the upper pixel electrodes UCOM and the lower pixel electrodes LCOM are connected to each other at one end and are also connected to the thin film transistor TFT, the upper pixel electrodes UP and the lower pixel electrodes LP in each pixel area Are electrically connected to each other. .

Hereinafter, the connection between the upper pixel electrodes UP and the lower pixel electrodes LP and the thin film transistor will be described in more detail with reference to FIG. 5. 5 is a cross-sectional view illustrating a region in which upper pixel electrodes UP and lower pixel electrodes LP are connected in a horizontal electric field display device according to an exemplary embodiment of the present invention.

Referring to FIG. 5, the pixel electrodes P of each pixel region are at positions where the upper pixel electrodes UCOM and the lower pixel electrodes LP are connected, that is, T at one end of each pixel electrode P. A second insulating layer INS2 covering a partial area of the second upper structure US2 of the shaped second structure S2, a side wall of the second lower structure LS2, and a partial area of the first insulating layer INS1 is further provided. Includes. Accordingly, the upper pixel electrode UP is disposed on the second upper structure US2 as well as the second insulating layer INS2 and the lower common electrode LCOM exposed to the outside of the second insulating layer INS2. Accordingly, the upper pixel electrode UP and the lower pixel electrode LP in each pixel region are connected to each other at one end of each pixel electrode P, and the second contact hole CH2 formed in the first insulating layer INS1 is formed. Through wiring and the thin film transistor TFT formed on the thin film transistor layer WTL, it may be connected.

In the above configuration, the lower common electrodes LCOM and the lower pixel electrodes LP are aluminum (Al), copper (Cu), molybdenum (Mo), chromium (Cr), titanium (Ti), gold (Au), It may be made of a single layer made of any one selected from the group consisting of silver (Ag), tungsten (W), or alloys thereof, or multiple layers thereof.

In addition, the upper common electrodes UCOM and the upper pixel electrodes UP are single selected from transparent conductive materials including indium tin oxide (ITO), indium zinc oxide (IZO), and gallium-doped zinc oxide (GZO). It may consist of a layer or multiple layers thereof.

According to the horizontal electric field type liquid crystal display device according to the first embodiment of the present invention described above, upper and lower common electrodes UCOM and LCOM are respectively disposed above and below the first structure S1, and the second structure ( Since the upper and lower pixel electrodes UP and LP are disposed on the upper and lower portions of S2), respectively, a uniform electric field can be formed even in the upper region of the liquid crystal layer. Accordingly, it is possible to obtain an effect of forming a uniform horizontal electric field over the entire liquid crystal layer without increasing a driving voltage for driving liquid crystal molecules in the liquid crystal layer.

In addition, since the electric fields of the upper and lower layers of the liquid crystal layer are uniformly formed, it is possible to obtain an effect of removing light leakage due to poor behavior of the liquid crystal located on the upper layer of the liquid crystal layer due to the electric field non-uniformity.

In addition, since the first and second lower structures have an undercut structure, the lower common electrode and the lower pixel electrode are exposed to the outside of the first and second structures, respectively. It is possible to connect to and collectively, thereby increasing the space utilization.

Next, a method of manufacturing the common electrode and the pixel electrode of the horizontal electric field type liquid crystal display according to the first embodiment of the present invention will be described with reference to FIGS. 6A to 6G. 6A to 6G are cross-sectional views illustrating mask processes for manufacturing a common electrode and a pixel electrode of the horizontal electric field display device according to the first embodiment of the present invention.

In FIGS. 6A to 6G, the manufacturing process of the lower part of the first insulating layer INS1 on which the common electrodes and pixel electrodes are formed is already known, so a detailed manufacturing process step thereof is omitted for convenience. In addition, since the electrode structure shown at the leftmost in these drawings is applied to both ends of the pixel electrode connected to the thin film transistor shown in FIG. 1 and the ends of the common electrode connected to the common line, the electrode structure shown in the drawing The connection part EC is denoted, and the central electrode is denoted as a common electrode COM, and the right electrode is denoted as a pixel electrode P. Therefore, the leftmost electrode described in the method of manufacturing the common electrode and the pixel electrode shown in FIGS. 6A to 6E is not a separate electrode, but represents one end of the common electrode COM and the pixel electrode P. And pixel electrodes.

6A is a cross-sectional view showing a first mask process for manufacturing a common electrode and a pixel electrode of the horizontal electric field display device according to the first embodiment of the present invention.

Referring to FIG. 6A, after a metal material and an insulating material are sequentially stacked on the first insulating layer INS1, the metal layer ML and the metal layer ML are formed through a first photoresist process using a first mask. A T-shaped first structure S1 and a second structure S2 arranged side by side at regular intervals are formed.

More specifically, a metal material having high conductivity, an organic insulating material, and a first photoresist are sequentially stacked on the first insulating layer INS1 through, for example, a sputtering process. In addition, a first photoresist pattern (not shown) is formed through a photolithography process using a first mask, and the organic insulating material exposed through the first photoresist pattern is exposed and exposed using the first photoresist pattern as a mask. It is patterned by etching. Thereafter, the remaining first photoresist pattern is ashed, thereby forming a T-shaped first structure S1 and a second structure S2 arranged side by side at regular intervals on the metal layer ML. The metal material used in the first mask process is aluminum (Al), copper (Cu), molybdenum (Mo), chromium (Cr), titanium (Ti), gold (Au), silver (Ag), tungsten (W), or It may be selected from the group consisting of alloys thereof. In addition, an organic insulating material having a black color may be used as the insulating material.

The first structure S1 includes a first upper structure US1 having a first width, and a first lower structure LS1 extending downward from the first upper structure US1 and having a second width smaller than the first width. Includes. That is, the first lower structure LS1 may have an undercut shape that is over-etched inward by a predetermined distance from the side of the first upper structure US1.

The second structure S2 includes a second upper structure US2 having a first width substantially equal to the first width of the first structure S1, and extending downward from the second upper structure US2 and having a first width. And a second lower structure LS2 having a smaller second width. That is, the second lower structure LS2 may also have an undercut shape that is over-etched inward by a predetermined distance from the side of the second upper structure US2.

6B and 6C are cross-sectional views illustrating a second mask process for manufacturing a common electrode and a pixel electrode of the horizontal electric field display device according to the first embodiment of the present invention.

Referring to FIG. 6B, after a second photoresist is deposited on the metal layer ML on which the first and second structures S1 and S2 are formed, the first and second structures are formed through a photolithography process using a second mask. A second photoresist pattern PR2 filling the undercut portions of the lower structures LS1 and LS2 is formed. The second photoresist pattern PR2 is formed to protrude to the outside of the first upper structure US1 and the second upper structure US2 at positions of the common electrode COM and one end of the pixel electrode P.

Referring to FIG. 6C, the metal layer ML exposed through the first and second structures S1 and S2 and the second photoresist pattern PR2 is a mask used to form the second photoresist pattern PR2. The second photoresist pattern PR2 is removed by exposure and etching using and remaining by ashing. Accordingly, a lower common electrode LCOM having a first width substantially equal to the first width of the first upper structure US1 is formed under the first lower structure LS1, and the second lower structure LS2 A lower pixel electrode LP having a first width substantially equal to the first width of the second upper structure US2 is formed under the. Accordingly, the first upper structure US1, the second upper structure US2, the lower common electrode LCOM, and the lower pixel electrode LP have substantially the same first width. However, the lower common electrode LCOM and the lower pixel electrode LP are formed to protrude outward of the first upper structure US1 and the second upper structure US2 at a position of one end thereof.

6D and 6E are cross-sectional views illustrating a third mask process for manufacturing a common electrode and a pixel electrode of the horizontal electric field display device according to the first embodiment of the present invention.

Referring to FIG. 6D, after a second insulating material is stacked on the entire surface on which the first and second structures S1 and S2, the lower common electrode LCOM, and the lower pixel electrode LP are formed, a third insulating material is deposited. The second insulating layer INS2 is formed through a photolithography process using a mask.

More specifically, a second insulating material and a third photoresist are sequentially stacked on the entire top where the first and second structures S1 and S2, the lower common electrode LCOM, and the lower pixel electrode LP are formed. do. Thereafter, through a photolithography process using a third mask, a third photoresist pattern (not shown) is formed so that all regions except for one end of the lower common electrode LCOM and the lower pixel electrode LP are exposed. The second insulating material exposed through the third photoresist pattern is removed through exposure and etching using the third photoresist pattern as a mask, and the remaining third photoresist pattern is removed through ashing, thereby forming the second insulating layer INS2. Is formed. The second insulating layer includes a partial region of the first upper structure US1, a partial region of the second upper structure US2, and a second insulating layer at positions corresponding to one end of the lower common electrode LCOM and the lower pixel electrode LP. The undercut regions of the first and second lower structures LS1 and LS2 are covered, and a part of the lower common electrode LCOM and a part of the lower pixel electrode LP are exposed.

Referring to FIG. 6E, a top surface of the entire structure on which first and second structures S1 and S2, a first lower common electrode LCOM, a first lower pixel electrode LP, and a second insulating layer INS2 are formed. A transparent conductive material is applied to the. The transparent conductive metal material may be selected from Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), and Gallium-doped Zinc Oxide (GZO).

Accordingly, the first upper structure US1, the second upper structure US2, the second insulating layer INS2, and the exposed first insulating layer INS1 between the lower common electrode LCOM and the lower pixel electrode LP Each transparent conductive material is located separately because of the level difference on the phase. Accordingly, the transparent conductive material positioned on the first upper structure US1 becomes the upper common electrode UCOM, and the transparent conductive material positioned on the second upper structure US2 becomes the upper pixel electrode UP. In contrast, the transparent conductive material positioned on the first upper structure US1 becomes the upper pixel electrode UP, and the transparent conductive material positioned on the second upper structure US2 becomes the upper common electrode UCOM. Of course it may be.

6F and 6G are cross-sectional views illustrating a fourth mask process for manufacturing a common electrode and a pixel electrode of the horizontal electric field display device according to the first embodiment of the present invention.

6F and 6G, after applying a fourth photoresist on the entire upper portion of the transparent conductive material, the upper common upper part positioned on the first upper structure US1 through a photolithography process using a fourth mask. An electrode UCOM and an upper pixel electrode UP positioned on the second upper structure US2 are formed, respectively.

More specifically, referring to FIG. 6F, after the fourth photoresist is applied over the entire transparent conductive material, the lower common electrode LCOM and the lower pixel electrode LP are performed by a photolithography process using a fourth mask. A fourth photoresist pattern (not shown) exposing the transparent conductive material positioned therebetween is formed.

Referring to FIG. 6G, after the transparent conductive material on the first insulating layer INS1 is completely removed through exposure and etching using the fourth photoresist pattern as a mask, the remaining fourth photoresist pattern is removed through ashing. Accordingly, the lower common electrode LCOM having the same first width as the upper common electrode UCOM and the lower pixel electrode LP having the same first width as the upper pixel electrode UP are obtained. However, since the lower common electrode LCOM and the lower pixel electrode LP each have protrusions exposed to the outside of the second insulating layer INS2, the length of the upper common electrode UCOM is greater than the length of the lower common electrode LCOM. The length of the upper pixel electrode UP is shorter than that of the lower pixel electrode LP.

According to the common electrode and the pixel electrode of the horizontal electric field type liquid crystal display according to the first embodiment of the present invention described above, the common electrode COM and the pixel electrode using the T-shaped first and second structures S1 and S2 are used. Each of P is divided into an upper common electrode UCOM, a lower common electrode LCOM, an upper pixel electrode UP, and a lower pixel electrode LP. In addition, at one end of the common electrode COM, the upper common electrode UCOM and the lower common electrode LCOM are electrically connected, and the upper pixel electrode UP and the lower pixel electrode LP of the pixel electrode P are connected to each other. It can be electrically connected. Accordingly, an electric field is formed between the upper common electrode (UCOM) and the upper pixel electrode (UP), and an electric field is formed between the lower common electrode (LCOM) and the lower pixel electrode (LP). An electric field can be formed.

Accordingly, it is possible to obtain an effect that it is not necessary to drive the common electrode and the pixel electrode with a high voltage in order to form a uniform electric field over the entire liquid crystal layer.

In addition, since the electric fields of the upper and lower layers of the liquid crystal layer are uniformly formed, it is possible to obtain an effect of removing light leakage due to poor behavior of the liquid crystal located on the upper layer of the liquid crystal layer due to the electric field non-uniformity.

In addition, since the first and second lower structures LS1 and Ls2 have an undercut structure, the lower common electrode LCOM and the lower pixel electrode LP are exposed to the outside of the first and second structures S1 and S2, respectively. Therefore, it is possible to collectively connect the upper common electrode UCOM and the upper pixel electrode UP at one end side of each electrode, thereby obtaining an effect of increasing space utilization.

Next, a horizontal electric field type liquid crystal display device according to a second embodiment of the present invention will be described in more detail with reference to FIG. 7. 7 is a schematic cross-sectional view of a horizontal electric field display device according to a second embodiment of the present invention.

In the liquid crystal display according to the second embodiment of the present invention, the upper common electrode UCOM, the lower common electrode LCOM, and the upper pixel electrode UP and the lower calcined electrode UP are substantially the same size, 2 The insulating layer INS2 is formed narrower than the widths of the upper common electrode UCOM and the upper pixel electrode UP, so that both sides of the upper common electrode UOM and the upper pixel electrode UP, the lower common electrode LCOM, and Both sides of the lower pixel electrode LP are exposed outside the second insulating layer INS2, the upper common electrode UCOM is connected to both exposed sides of the lower common electrode LCOM, and the upper pixel electrode UP It differs from the liquid crystal display according to the first embodiment shown in FIG. 3 in that it is connected to both exposed sides of the lower pixel electrode LP.

Hereinafter, the connection between the upper common electrodes UCOM and the lower common electrodes LCOM and the common line will be described in more detail with reference to FIGS. 8A and 8B. FIG. 8A is a cross-sectional view showing a side surface of a region to which upper common electrodes and lower common electrodes are connected in a horizontal electric field display device according to a second embodiment of the present invention, and FIG. 8B is a horizontal electric field type display device according to a second embodiment of the present invention. A cross-sectional view showing the front side of a region where upper common electrodes and lower common electrodes are connected in an electric field display device.

8A and 8B, the second insulating layer INS2 of the horizontal electric field display device according to the second exemplary embodiment of the present invention is formed to be narrower than the widths of the upper common electrode UCOM and the lower common electrode LCOM. Accordingly, both sides of the upper common electrode UCOM and both sides of the lower common electrode LCOM are exposed outside the second insulating layer INS2. The upper common electrode UCOM is exposed through the second insulating layer INS2. It is disposed on both sides of the first upper structure US1, the second insulating layer INS2, and the lower common electrode LCOM exposed through the second insulating layer INS2. In addition, the upper common electrode UCOM is a common line disposed on the wiring and the thin film transistor layer WTL through the first insulating layer INS1 and the first contact hole CH1 passing through the wiring and the thin film transistor layer WTL. CL).

Next, a connection between the upper pixel electrodes UP and the lower pixel electrodes LP and the common line will be described in more detail with reference to FIGS. 9A and 9B. 9A is a cross-sectional view illustrating a side surface of a region to which upper and lower pixel electrodes are connected in a horizontal electric field display device according to a second exemplary embodiment of the present invention, and FIG. 9B is a horizontal cross-sectional view according to a second exemplary embodiment of the present invention. A cross-sectional view illustrating a front surface of a region to which upper and lower pixel electrodes are connected in an electric field display device.

9A and 9B, the second insulating layer INS2 of the liquid crystal display according to the second exemplary embodiment of the present invention is formed to be narrower than the widths of the upper pixel electrode UP and the lower pixel electrode LP. Accordingly, both side portions of the upper pixel electrode UCOM and both side portions of the lower pixel electrode LP are exposed outside the second insulating layer INS2. The upper pixel electrode UP includes a first upper structure US1 exposed through the second insulating layer INS2, an upper portion of the second insulating layer INS2, and a lower common electrode exposed through the second insulating layer INS2. LCOM) on both sides. In addition, the upper pixel electrode UP is a thin film transistor disposed in the wiring and thin film transistor layer WTL through the first insulating layer INS1 and a second contact hole CH2 penetrating through the wiring and thin film transistor layer WTL. TFT).

According to the above-described horizontal electric field type liquid crystal display according to the second exemplary embodiment of the present invention, the same effects as those of the horizontal electric field type liquid crystal display according to the first exemplary embodiment can be obtained. Moreover, according to the horizontal electric field type liquid crystal display according to the second embodiment of the present invention, the sizes of the upper common electrode and the lower common electrode and the sizes of the upper and lower pixel electrodes are accurately self-aligned, so that the mask is aligned. The effect of preventing product defects due to errors can be further obtained.

Next, a method of manufacturing the common electrode and the pixel electrode of the horizontal electric field type liquid crystal display according to the second embodiment of the present invention will be described with reference to FIGS. 10A to 10G. 10A to 10G are cross-sectional views illustrating mask processes for manufacturing a common electrode and a pixel electrode of a horizontal electric field display device according to a second embodiment of the present invention.

In the method of manufacturing a horizontal electric field type display device according to the second embodiment of the present invention, according to the method of forming the second gate insulating film, the structure of the second insulating film to be changed, and the change in the structure of the second insulating film, It is different from the manufacturing method of the horizontal electric field display device according to the first embodiment of the present invention in that the sizes of the upper and lower common electrodes and the sizes of the upper and lower pixel electrodes can be accurately self-aligned. . Hereinafter, a horizontal electric field display device according to a second exemplary embodiment of the present invention will be described with reference to FIGS. 9A to 9G.

10A is a cross-sectional view illustrating a first mask process for manufacturing a common electrode and a pixel electrode of a horizontal electric field display device according to a second embodiment of the present invention.

Referring to FIG. 10A, after a metal material and an insulating material are sequentially stacked on the first insulating layer INS1, the metal layer ML and the metal layer ML are formed through a first photoresist process using a first mask. A T-shaped first structure S1 and a second structure S2 arranged side by side at regular intervals are formed.

More specifically, a metal material having high conductivity, an organic insulating material, and a first photoresist are sequentially stacked on the first insulating layer INS1 through, for example, a sputtering process. In addition, a first photoresist pattern (not shown) is formed through a photolithography process using a first mask, and the organic insulating material exposed through the first photoresist pattern is exposed and exposed using the first photoresist pattern as a mask. It is patterned by etching. Thereafter, the remaining first photoresist pattern is ashed, thereby forming a T-shaped first structure S1 and a second structure S2 arranged side by side at regular intervals on the metal layer ML. The metal material used in the first mask process is aluminum (Al), copper (Cu), molybdenum (Mo), chromium (Cr), titanium (Ti), gold (Au), silver (Ag), tungsten (W), or It may be selected from the group consisting of alloys thereof. In addition, an organic insulating material having a black color may be used as the insulating material.

The first structure S1 includes a first upper structure US1 having a first width, and a first lower structure LS1 extending downward from the first upper structure US1 and having a second width smaller than the first width. Includes. That is, the first lower structure LS1 may have an undercut shape that is over-etched inward by a predetermined distance from the side of the first upper structure US1.

The second structure S2 includes a second upper structure US2 having a first width substantially equal to the first width of the first structure S1, and extending downward from the second upper structure US2 and having a first width. And a second lower structure LS2 having a smaller second width. That is, the second lower structure LS2 may also have an undercut shape that is over-etched inward by a predetermined distance from the side of the second upper structure US2.

10B and 10C are cross-sectional views illustrating a second mask process for manufacturing a common electrode and a pixel electrode of a horizontal electric field display device according to a second embodiment of the present invention.

Referring to FIG. 10B, after a second photoresist is stacked on the metal layer ML on which the first and second structures S1 and S2 are formed, the first and second structures are formed through a photolithography process using a second mask. A second photoresist pattern PR2 filling the undercut portions of the lower structures LS1 and LS2 is formed. The second photoresist pattern PR2 is formed to protrude to the outside of the first upper structure US1 and the second upper structure US2 at positions of the common electrode COM and one end of the pixel electrode P.

Referring to FIG. 10C, the metal layer ML exposed through the first and second structures S1 and S2 and the second photoresist pattern PR2 is exposed by using the second photoresist pattern PR2 as a mask. The second photoresist pattern PR2 is removed by etching and remaining by ashing. Thus, there is no need to use the mask used to form the second photoresist pattern. Accordingly, a lower common electrode LCOM having a size substantially the same as that of the first upper structure US1 is formed under the first lower structure LS1, and a first lower structure LS2 is formed under the second lower structure LS2. 2 A lower pixel electrode LP having a size substantially the same as that of the upper structure US2 is formed. Therefore, since the first upper structure US1, the second upper structure US2, the lower common electrode LCOM, and the lower pixel electrode LP all have substantially the same size, unlike the case of the first embodiment, At one end of each of the electrode LCOM and the lower pixel electrode LP, portions protruding outward of the first upper structure US1 and the second upper structure US2 are not formed.

10D and 10E are cross-sectional views illustrating a third mask process for manufacturing a common electrode and a pixel electrode of a horizontal electric field display device according to a second embodiment of the present invention.

Referring to FIG. 10D, after a second insulating material is stacked on the entire surface on which the first and second structures S1 and S2, the lower common electrode LCOM, and the lower pixel electrode LP are formed, a third insulating material is deposited. A second insulating layer INS2 is formed through a photolithography process using a mask.

More specifically, a second insulating material and a third photoresist are sequentially stacked on the entire top where the first and second structures S1 and S2, the lower common electrode LCOM, and the lower pixel electrode LP are formed. do. Thereafter, through a photolithography process using a third mask, a third photoresist pattern (not shown) is formed so that the remaining regions except for the region where the second insulating film is to be formed are exposed. The second insulating material exposed through the third photoresist pattern is removed through exposure and etching using the third photoresist pattern as a mask, and the remaining third photoresist pattern is removed through ashing, thereby forming the second insulating layer INS2. Is formed. The second insulating layer INS2 is formed to be narrower than the widths of the upper common electrode UCOM and the lower common electrode LCOM. Accordingly, both side portions of the upper common electrode UCOM and both side portions of the lower common electrode LCOM are exposed outside the second insulating layer INS2.

Referring to FIG. 10E, a top surface of the entire structure on which first and second structures S1 and S2, a first lower common electrode LCOM, a first lower pixel electrode LP, and a second insulating layer INS2 are formed. A transparent conductive material is applied to the. The transparent conductive metal material may be selected from Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), and Gallium-doped Zinc Oxide (GZO).

Accordingly, the first upper structure US1, the second upper structure US2, the second insulating layer INS2, and the exposed first insulating layer INS1 between the lower common electrode LCOM and the lower pixel electrode LP Each transparent conductive material is located separately because of the level difference on the phase. In addition, since the second insulating layer INS2 is positioned on the ends of the first upper structure US1 and the second upper structure US2 to have a width narrower than that of these structures, the second insulating layer INS2 is exposed to the outside of the second insulating layer INS2. A transparent conductive material is also positioned on the first and second upper structures US1 and US2 and on the first and second lower structures LS1 and LS2. Accordingly, the transparent conductive material positioned on the first upper structure US1 becomes the upper common electrode UCOM, and the transparent conductive material positioned on the second upper structure US2 becomes the upper pixel electrode UP. In contrast, the transparent conductive material positioned on the first upper structure US1 becomes the upper pixel electrode UP, and the transparent conductive material positioned on the second upper structure US2 becomes the upper common electrode UCOM. Of course it may be.

10F and 10G are cross-sectional views illustrating a fourth mask process for manufacturing a common electrode and a pixel electrode of the horizontal electric field display device according to the second embodiment of the present invention.

Referring to FIGS. 10F and 10G, after applying a fourth photoresist on the entire upper portion of the transparent conductive material, the upper common upper part positioned on the first upper structure US1 through a photolithography process using a fourth mask. An electrode UCOM and an upper pixel electrode UP positioned on the second upper structure US2 are formed, respectively.

More specifically, referring to FIG. 10F, after a fourth photoresist is applied over the entire transparent conductive material, the lower common electrode LCOM and the lower pixel electrode LP are performed by a photolithography process using a fourth mask. A fourth photoresist pattern (not shown) exposing the transparent conductive material on the first insulating layer INS1 positioned therebetween is formed.

Referring to FIG. 10G, after the transparent conductive material on the first insulating layer INS1 is completely removed through exposure and etching using the fourth photoresist pattern as a mask, the remaining fourth photoresist pattern is removed through ashing. Accordingly, the lower common electrode LCOM having the same size as the upper common electrode UCOM (ie, having the same width and length) and the lower common electrode LCOM having the same size as the upper pixel electrode UP (ie, having the same width and length). The lower pixel electrode LP is obtained.

According to the horizontal electric field type liquid crystal display according to the second embodiment of the present invention described above, since the upper common electrode, the lower common electrode, the upper pixel electrode and the lower pixel electrode can be formed in a self-alignment method, the mask is misaligned. Process error due to (misalign) can be reduced, so that the effect of preventing product defects can be obtained.

11 is a graph showing transmittance of a conventional horizontal electric field liquid crystal display and a horizontal electric field liquid crystal display according to embodiments of the present invention. In FIG. 11, the horizontal axis represents the driving voltage supplied to the pixel electrode, and the vertical axis represents the transmission efficiency of the liquid crystal display. As shown in FIG. 11, in the conventional horizontal electric field type liquid crystal display indicated by a dotted line, the maximum transmission efficiency was 0.187 at the maximum driving voltage of 60V, but in the horizontal electric field type liquid crystal display according to the embodiments of the present invention, at the driving voltage of 36V. The transmission efficiency was found to be 0.21. Accordingly, it can be seen that the horizontal electric field type liquid crystal display device according to the exemplary embodiments of the present invention can obtain high transmission efficiency even with a much lower driving voltage than the conventional horizontal electric field type liquid crystal display device.

Although embodiments of the present invention have been described above with reference to the accompanying drawings, the technical configuration of the present invention described above is in other specific forms without changing the technical spirit or essential features of the present invention by those skilled in the art. It will be appreciated that it can be implemented. Therefore, it should be understood that the embodiments described above are illustrative in all respects and not limiting. In addition, the scope of the present invention is indicated by the claims to be described later rather than the detailed description. In addition, all changes or modifications derived from the meaning and scope of the claims and their equivalent concepts should be construed as being included in the scope of the present invention.

SUB1, SUB2: substrate INS1, INS2: insulating layer
WTL: wiring and thin film transistor layers S1, S2: structure
LS1, LS2: lower structure US1, US2: upper structure
COM: common electrode LCOM: lower common electrode
UCOM: upper common electrode P: pixel electrode
LP: lower pixel electrode UP: upper pixel electrode

Claims (10)

A first substrate and a second substrate disposed to face each other with a liquid crystal layer therebetween;
First and second structures disposed parallel to each other on the first substrate and having a width of each upper end greater than that of a lower end; And
And an upper electrode and a lower electrode disposed on an upper surface and a lower surface of each of the first and second structures to be spaced apart from each other,
The upper electrode and the lower electrode are connected to each other at one end of each of the first and second structures,
The first voltage supplied to the upper and lower electrodes of the first structure and the second voltage supplied to the upper and lower electrodes of the second structure are set differently to form a horizontal electric field in the liquid crystal layer. A horizontal electric field type liquid crystal display.
delete The method of claim 1,
A wiring and a thin film transistor layer in which wirings and thin film transistors are disposed on the first substrate;
A first insulating layer covering the wiring and the thin film transistor layer; And
Further comprising a second insulating layer covering a partial region of an upper end portion and a lower sidewall of the first and second structures at one end of each of the first and second structures, and exposing one end of the lower electrode,
Wherein the upper electrode extends from upper ends of the first and second structures and is connected to one end of the lower electrode exposed through the second insulating layer.
The method of claim 1,
A wiring and a thin film transistor layer in which wirings and thin film transistors are disposed on the first substrate;
A first insulating layer covering the wiring and the thin film transistor layer; And
The first and second structures have a width smaller than the widths of upper ends of the first and second structures at one end of each of the first and second structures, and expose upper ends of the first and second structures and both sides of the lower electrode. 2 further comprising an insulating film,
Wherein the upper electrode extends from upper ends of the first and second structures and is connected to both sides of the lower electrode exposed through the second insulating layer.
The method according to claim 3 or 4,
The wirings include a gate line and a data line crossing each other, and a common line arranged in parallel with the gate line,
An upper electrode extending from the first structure is connected to any one of the common line and the thin film transistor exposed through the first insulating layer,
And an upper electrode extending from the second structure is connected to the other of the common line exposed through the first insulating layer and the thin film transistor.
The method according to any one of claims 1, 3, and 4,
A horizontal electric field type liquid crystal display device, wherein a width of each of the upper electrode and the lower electrode is the same as a width of each of upper portions of the first and second structures.
A first substrate and a second substrate disposed to face each other with a liquid crystal layer therebetween;
A thin film transistor layer and a wire on which the wires and thin film transistors are disposed on the first substrate;
First and second structures disposed in parallel with each other on a first insulating layer covering the wiring and the thin film transistor layer, the first structure extending from a first upper structure having a first width and the first upper structure, and the And a first lower structure having a second width smaller than a first width, wherein the second structure extends from the second upper structure and the second upper structure and has the second width. It includes a substructure;
A first upper electrode disposed on the first upper structure;
A first lower electrode disposed between the first lower structure and the first insulating layer and disposed at a position opposite to the first upper electrode;
A second upper electrode disposed on the second upper structure; And
And a second lower electrode disposed between the second lower structure and the first insulating layer, and disposed at a position opposite to the second upper electrode,
The first upper electrode and the first lower electrode are connected to each other at one end of the first structure, and the second upper electrode and the second lower electrode are connected to each other at one end of the second structure. A horizontal electric field type liquid crystal display.
The method of claim 7,
Same as the width of the first and second upper structures, partial regions of the first and second upper structures, sidewalls of the first and second lower structures, and partial regions of the first and second lower electrodes Further comprising a second insulating film covering the,
The first upper electrode extends from the first upper structure and is connected to one end of the first lower electrode exposed through the second insulating layer, and the second upper electrode extends from the second upper structure to the second upper structure. 2 A horizontal electric field type liquid crystal display device, characterized in that it is connected to one end of the second lower electrode exposed through an insulating film.
The method of claim 7,
It has a width narrower than that of the first and second upper structures, and includes partial regions of the first and second upper structures, sidewalls of the first and second lower structures, and the first and second lower electrodes. Further comprising a second insulating film covering a partial region,
The first upper electrode extends from the first upper structure and is connected to both sides of the first lower electrode exposed through the second insulating layer, and the second upper electrode extends from the second upper structure to the second upper structure. 2 A horizontal electric field type liquid crystal display device, characterized in that connected to both sides of the second lower electrode exposed through an insulating layer.
After sequentially laminating a first conductive layer, an organic insulating layer, and a first photoresist on the first insulating layer, a first photoresist pattern is formed through a photolithography process using a first mask, and the first photoresist Removing the organic insulating layer exposed through a pattern to form first and second T-shaped structures having an undercut structure disposed parallel to each other;
After laminating a second photoresist on the first conductive layer on which the T-shaped first and second structures are formed, the undercut portions of the first and second substructures are formed through a photolithography process using a second mask. A first lower electrode disposed under the first structure by forming a filled second photoresist pattern and patterning the first conductive layer exposed through the second photoresist pattern, and a lower portion of the second lower structure Forming a second lower electrode disposed on the second lower electrode;
After laminating a second insulating material on the first insulating layer on which the first and second structures and the first and second lower electrodes are formed, the first lower electrode and the first lower electrode are formed through a photolithography process using a third mask. A third photoresist pattern is formed to expose regions other than one end of the second lower electrode, and a second insulating material exposed through the third photoresist pattern is removed, thereby forming the upper portions of the first and second structures. Forming a second insulating layer covering some areas of the areas and the undercut area, and exposing portions of the first and second lower electrodes; And
After laminating a second conductive layer on the entire structure on which the second insulating layer is formed, a fourth conductive layer is exposed through a photolithography process using a fourth mask to expose the second conductive layer between the first lower electrode and the second lower electrode. Forming a photoresist pattern, and removing the second conductive layer exposed through the fourth photoresist pattern to form first and second upper electrodes respectively disposed on the first and second structures And
The first upper electrode extends from an upper end of the first structure and is connected to the first lower electrode exposed through the second insulating layer, and the second upper electrode extends from an upper end of the second structure to the second A method of manufacturing a common electrode and a pixel electrode of a horizontal electric field type liquid crystal display device, characterized in that it is connected to the second lower electrode exposed through an insulating layer.

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