KR102209241B1 - Organic light emitting display apparatus and manufacturing the same - Google Patents

Abstract

The present invention relates to an organic light emitting display device and a method of manufacturing the same. An organic light emitting display device according to an exemplary embodiment of the present invention includes a substrate and an organic light emitting device disposed on the substrate. A first inorganic material layer is formed on the organic light-emitting device, and an organic material layer is formed on the first inorganic material layer. In addition, a second inorganic material layer is formed on the organic material layer. Here, at least one of the first inorganic material layer and the second inorganic material layer is formed on the entire surface of the substrate. Since at least one of the first inorganic material layer and the second inorganic material layer is formed on the entire surface of the substrate, the use of a metal mask for patterning the first inorganic material layer or the second inorganic material layer is unnecessary, and the metal mask is not used. Arcing and foreign matter generated during use may be significantly reduced, and manufacturing cost of the organic light emitting display device may be reduced.

Description

Organic light emitting display device and its manufacturing method TECHNICAL FIELD

The present invention relates to an organic light-emitting display device and a method of manufacturing the same, and more particularly, to an organic light-emitting display device in which the use of a metal mask is minimized and a method of manufacturing the organic light-emitting display device.

An organic light emitting display (OLED) is a self-luminous display device, and unlike a liquid crystal display (LCD), it does not require a separate light source, and thus can be manufactured in a lightweight and thin form. In addition, the organic light emitting display device is not only advantageous in terms of power consumption due to low voltage driving, but also has excellent response speed, viewing angle, and contrast ratio, and thus is being studied as a next-generation display.

In the case of a top-emission type organic light-emitting display device, a transparent or translucent electrode is used as a cathode to emit light emitted from the organic light-emitting layer upward. In addition, in order to secure the reliability of the organic light-emitting display device, an encapsulation part is formed on the organic light-emitting device including the organic light-emitting layer that emits light to protect the organic light-emitting layer from moisture, physical impact, and foreign substances that may occur during the manufacturing process. do. In the top emission type organic light emitting display device, the encapsulation unit may be a glass encapsulation unit or an encapsulation unit having a thin film encapsulation structure in which inorganic and organic layers are alternately stacked to increase moisture permeability to delay moisture penetration.

A thin film encapsulation structure in which inorganic and organic layers are alternately stacked has an advantage of having a thin thickness and an advantage of implementing a flexible organic light emitting display device, and thus has been widely studied. In the thin film encapsulation structure, the inorganic material layer is patterned to expose conductive components such as pad portions. However, since patterning of the inorganic material layer is performed on the organic light emitting device, there are many process restrictions. For example, in patterning of an inorganic material layer using photo lithography, a developer during a process may damage the organic emission layer, and in an etching process for patterning, the cathode and the organic emission layer may be damaged. Accordingly, patterning of the inorganic material layer is generally performed using a metal mask capable of avoiding the above-described damages.

The process of using a metal mask in patterning of the inorganic material layer may cause damage due to arcing and generation of foreign materials caused by concentration of plasma in a part of the metal mask during the plasma process. The arcing phenomenon may damage the organic light emitting layer or the cathode, and foreign substances may short-circuit the cathode, which may cause poor light emission of the organic light emitting device. In addition, the use of a metal mask greatly increases the manufacturing cost of the organic light emitting display device, and the use of a plurality of metal masks can increase the influx of foreign substances that may damage the organic light emitting device by complicating the manufacturing process. .

[Related technical literature]

1. Method of providing electrical connection part(s) to a sealed organic light emitting diode device and the OLED device (Patent Application No. 2013-7010709)

Thus, the inventors of the present invention invented a structure and a manufacturing method for applying an inorganic material layer having a thin film encapsulation structure without using a metal mask.

Accordingly, an object to be solved of the present invention is to provide an organic light emitting display device in which an inorganic material layer is stacked and a method of manufacturing the same without using a metal mask for patterning an inorganic material layer in a thin film encapsulation structure.

Another problem to be solved by the present invention is an organic light emitting display device capable of providing electrical connection between a pad portion and a flexible printed circuit board in an organic light emitting display device in which an inorganic material layer is stacked without the use of a metal mask for patterning an inorganic material layer, and It is to provide a method of manufacturing it.

The problems of the present invention are not limited to the problems mentioned above, and other problems that are not mentioned will be clearly understood by those skilled in the art from the following description.

In order to solve the aforementioned problems, an organic light emitting display device according to an exemplary embodiment of the present invention includes a substrate and an organic light emitting device disposed on the substrate. A first inorganic material layer is formed on the organic light-emitting device, and an organic material layer is formed on the first inorganic material layer. In addition, a second inorganic material layer is formed on the organic material layer. Here, at least one of the first inorganic material layer and the second inorganic material layer is formed on the entire surface of the substrate. Since at least one of the first inorganic material layer and the second inorganic material layer is formed on the entire surface of the substrate, the use of a metal mask for patterning the first inorganic material layer or the second inorganic material layer is unnecessary, and the metal mask is not used. Arcing and foreign matter generated during use may be significantly reduced, and manufacturing cost of the organic light emitting display device may be reduced.

According to another feature of the present invention, the organic light-emitting display device further includes a pad portion disposed on a substrate, the substrate including a light-emitting area in which an organic light-emitting element is formed, and a pad area in which a pad portion is formed on one side of the substrate, and At least one of the first inorganic material layer and the second inorganic material layer formed on the entire surface of the pad is characterized in that it covers the pad.

According to another feature of the present invention, the organic light emitting display device further includes a driving circuit, and at least one of the first inorganic material layer and the second inorganic material layer formed on the entire surface of the substrate covers the driving circuit.

According to another feature of the present invention, the organic light emitting display device further includes a flexible printed circuit board electrically connected to the pad unit, and the flexible printed circuit board includes at least one of a first inorganic material layer and a second inorganic material layer formed on the entire surface of the substrate. One is pressurized and electrically connected to the pad unit.

According to another feature of the present invention, the thickness of at least one of the first inorganic material layer and the second inorganic material layer is 10 nm or more and 60 nm or less.

According to another feature of the present invention, one of the first inorganic material layer and the second inorganic material layer is formed on the entire surface to cover the pad part, and the other one of the first inorganic material layer and the second inorganic material layer is formed only in the light emitting area. do.

According to another feature of the present invention, the other one of the first inorganic material layer and the second inorganic material layer is formed from a portion extending at least 500 μm to the other side of the substrate on which the pad portion is formed.

According to still another feature of the present invention, the organic light emitting display device further includes one of a thin film transistor including a gate electrode, an active layer, a source electrode, and a drain electrode, and a gate insulating layer, an interlayer insulating layer, and an inorganic material layer. One of the inorganic material layer and the second inorganic material layer is in contact with one of a gate insulating layer, an interlayer insulating layer, and a passivation layer.

According to another feature of the present invention, both the first inorganic material layer and the second inorganic material layer are formed on the entire surface of the substrate.

According to another feature of the present invention, the sum of the thickness of the first inorganic material layer and the thickness of the second inorganic material layer is 10 nm or more and 60 nm or less.

According to another feature of the present invention, the first inorganic material layer and the second inorganic material layer are made of different materials.

According to another feature of the present invention, the first inorganic material layer and the second inorganic material layer are made of different thicknesses.

In order to solve the above-described problems, a method of manufacturing an organic light emitting display device according to an exemplary embodiment of the present invention includes forming an organic light emitting element and a pad portion on a substrate, and forming a first inorganic material layer covering the organic light emitting element and the pad portion on a substrate. Depositing on the entire surface, applying an organic material layer on the first inorganic material layer, depositing a second inorganic material layer on the organic material layer in the area where the organic light emitting element is formed, and pressing the flexible printed circuit board toward the substrate to make a flexible printed circuit The step of electrically connecting the substrate and the pad portion, and depositing the first inorganic material layer on the entire surface of the substrate includes: introducing a precursor gas, purging the precursor gas, introducing an oxygen-containing gas, and It characterized in that it comprises the step of purging the oxygen-containing gas.

According to another feature of the present invention, the thickness of the first inorganic material layer is 10 nm or more and 60 nm or less.

Details of other embodiments are included in the detailed description and drawings.

The present invention has an effect of minimizing damage to the organic light-emitting device that may occur by using a metal mask, thereby minimizing defects of the organic light-emitting device.

In addition, according to the present invention, the inorganic material layer formed without using a metal mask extends to the edge of the substrate, so that the moisture permeability is lowered, thereby improving the durability of the organic light emitting device.

In addition, the present invention can reduce the number of times of use of the metal mask in the manufacturing process of the organic light emitting display device, thereby simplifying the manufacturing process, thereby reducing the inflow of foreign substances and reducing the manufacturing cost of the organic light emitting display device. I can make it.

The effects according to the present invention are not limited by the contents exemplified above, and more various effects are included in the present specification.

1 is a plan view of an organic light emitting display device according to an exemplary embodiment of the present invention.
2 is a cross-sectional view of an organic light emitting diode display taken along line II-II' of FIG. 1.
3 is a cross-sectional view of an organic light emitting diode display according to another exemplary embodiment of the present invention.
4 is a cross-sectional view of an organic light emitting diode display according to another exemplary embodiment of the present invention.
5 is a flowchart of a method of manufacturing an organic light emitting diode display according to an exemplary embodiment of the present invention.

Advantages and features of the present invention, and a method of achieving them will become apparent with reference to the embodiments described below in detail together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various forms different from each other, and only these embodiments make the disclosure of the present invention complete, and common knowledge in the technical field to which the present invention pertains. It is provided to completely inform the scope of the invention to those who have it, and the invention is only defined by the scope of the claims.

When an element or layer is referred to as “on” another element or layer, it includes all cases in which another layer or other element is interposed directly on or in the middle of another element.

Although the first, second, and the like are used to describe various components, it goes without saying that these components are not limited by these terms. These terms are only used to distinguish one component from another component. Therefore, it goes without saying that the first component mentioned below may be the second component within the technical idea of the present invention.

The same reference numerals refer to the same components throughout the specification.

The size and thickness of each component shown in the drawings are illustrated for convenience of description, and the present invention is not limited to the size and thickness of the illustrated component.

Each of the features of the various embodiments of the present invention can be partially or entirely combined or combined with each other, and as a person skilled in the art can fully understand, technically various interlocking and driving are possible, and each of the embodiments may be independently implemented with respect to each other. It may be possible to do it together in a related relationship

Hereinafter, various embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a plan view of an organic light emitting display device according to an exemplary embodiment of the present invention. 2 is a cross-sectional view of an organic light emitting diode display taken along line II-II' of FIG. 1. 1 illustrates a part of an organic light emitting diode display 100 in which the light emitting area EA and the pad area PA of the substrate 101 are displayed. In FIG. 1, the first inorganic material layer 151 and the second inorganic material layer 153 are separated and displayed in order to establish a positional relationship between the first inorganic material layer 151 and the second inorganic material layer 153, and the first inorganic material layer ( Components located under the 151 and the second inorganic material layer 153 are indicated by solid lines. In addition, for convenience of description, a flexible printed circuit board (FPCB) electrically connected to the pad unit 160 is omitted.

1 and 2, the organic light emitting diode display 100 includes a thin film transistor 120, a gate insulating layer 131, a passivation layer 132, a planarization layer 133, an organic light emitting device 140, and a bank. 134, a first inorganic material layer 151, an organic material layer 152, a second inorganic material layer 153, a wiring 125, a pad unit 160, and a flexible printed circuit board 172.

The organic light-emitting display device 100 is a top emission type organic light-emitting display device in which light emitted from the organic light-emitting device 140 is emitted toward the top of the substrate 101 on which the thin film transistor 120 is formed. .

The substrate 101 supports various elements formed on the substrate 101. The substrate 101 includes a light emitting area EA in which the organic light emitting device 140 is formed and a pad area PA in which the pad unit 160 positioned above the substrate 101 is formed. The substrate 101 may be made of an insulating material. Also, the substrate 101 may be made of a material having flexibility. For example, the substrate 101 includes polyimide (PI), polyetherimide (PEI), polyethylene terephthalate (PET), polycarbonate (PC), polymetalmethyl acrylate (PMMA). ), polystyrene (PS), styrene acrylic nitrile copolymer (SAN), silicone-acrylic resin, and the like.

Referring to FIG. 2, the thin film transistor 120 includes a substrate 101, a gate electrode 121, an active layer 122, a source electrode 123, and a drain electrode 124. In FIG. 1, the thin film transistor 120 is illustrated as a thin film transistor having a bottom gate structure, but the present invention is not limited thereto, and the thin film transistor 120 may be a thin film transistor having another structure. The thin film transistor 120 is a driving thin film transistor, and although not shown in FIG. 2, a switching thin film transistor is further included.

A gate electrode 121 is formed on the substrate 101. A gate insulating layer 131 is formed on the gate electrode 121. The gate insulating layer 131 is formed over the entire surface of the substrate 101. The gate insulating layer 131 electrically insulates the gate electrode 121 and the active layer 122. The gate insulating layer 131 may be made of a metal oxide or silicon-based material. An active layer 122 is formed on the gate insulating layer 131. The active layer 122 may be made of a semiconductor material including various metal oxides and silicon-based materials. For example, the active layer 122 may be formed of an oxide semiconductor, amorphous silicon, polycrystalline silicon, or the like.

A source electrode 123 and a drain electrode 124 are formed on the active layer 122. Each of the source electrode 123 and the drain electrode 124 contacts the active layer 122. A passivation layer 132 covering exposed portions of the source electrode 123, the drain electrode 124, and the active layer 122 is formed. The passivation layer 132 is a layer for protecting the components of the thin film transistor 120 from moisture or oxygen. The passivation layer 132 is formed to extend from the light emitting area EA toward the edge of the substrate 101, and may cover the wiring 125 formed simultaneously with the gate electrode 121 as shown in FIG. 1. However, the passivation layer 132 is not formed in the pad area PA.

A planarization layer 133 is formed on the thin film transistor 120. The planarization layer 133 functions to planarize the upper portion of the thin film transistor 120. The planarization layer 133 has a contact hole exposing at least a portion of the drain electrode 124 or the source electrode 123 of the thin film transistor 120. The passivation layer 132 also exposes at least a portion of the drain electrode 124 or the source electrode 123 through the contact hole.

An organic light-emitting device 140 including an anode 141, an organic emission layer 142 and a cathode 143 is formed on the planarization layer 133. The anode 141 is formed of a conductive material having a high work function, for example, a transparent conductive oxide (TCO). The anode 141 is connected to the source electrode 123 of the thin film transistor 120 through a contact hole of the planarization layer 133. Banks 134 are disposed on both sides of the anode 141. In FIG. 1, the N-type thin film transistor 120 to which the anode 141 and the source electrode 123 are connected is shown, but the present invention is not limited thereto, and the P-type thin film transistor 120 is used to provide the anode 141 and the drain electrode 124. ) May be connected.

The organic emission layer 142 is a layer for emitting light and is made of an organic emission material. A cathode 143 is formed on the organic emission layer 142. Since the organic light-emitting display device 100 is a top emission type organic light-emitting display device, the cathode 143 is formed of a very thin metal material or a transparent conductive oxide having a low work function. When the cathode 143 is formed of a metallic material, the cathode 143 is formed to a thickness of several hundred Å or less, and when the cathode 143 is formed to such a thickness, the cathode 143 becomes a semi-transmissive layer, substantially It becomes a transparent layer.

A first inorganic material layer 151 is formed on the cathode 143. The first inorganic material layer 151 protects the organic emission layer 142 from moisture, air, or physical impact that may penetrate from the outside. The first inorganic material layer 151 is formed on the entire surface of the substrate 101 including the light emitting area EA and the pad area PA. Since the first inorganic material layer 151 is formed on the entire surface of the substrate 101, that is, from one edge of the substrate 101 to the other edge of the substrate 101, moisture penetration from the side surface of the organic light emitting display device 100 can be minimized. The first inorganic material layer 151 may be positioned directly on the cathode 143, but an organic layer may be first formed on the cathode 143 and then may be formed on the organic layer. The organic layer may be formed to improve optical characteristics with respect to light from the organic emission layer 142 and to reduce damage caused by plasma when the first inorganic layer 151 is formed.

The first inorganic material layer 151 may be formed of one of aluminum oxide, silicon nitride, zinc oxide, zirconium oxide, titanium oxide, hafnium oxide, lanthanum oxide, and the like.

The first inorganic material layer 151 is formed to a thickness of 10 to 60 nm by atomic layer deposition. When the first inorganic material layer 151 has a thickness of 10 nm or less, the layer may not be formed sufficiently uniformly and thus sufficient moisture permeability may not be secured. When the first inorganic material layer 151 has a thickness of 60 nm or more, the pad unit 160 and the flexible printed circuit board 172 to be described later may not be connected with a sufficiently low resistance. In addition, when the thickness of the first inorganic material layer 151 is 60 nm or more, it may be disadvantageous from the viewpoint of flexibility when the organic light emitting display device 100 is bent.

Even if the first inorganic material layer 151 has a thickness of 60 nm or less, it may have sufficient insulation and moisture permeability due to the high aluminum oxide density of the first inorganic material layer 151 achieved through atomic layer deposition.

In addition, the conventional inorganic material layer is formed through chemical vapor deposition (CVD), so that the step coverage is not excellent and the adhesion to the cathode 143 is low. Accordingly, film tearing of the first inorganic material layer 151 from the cathode 143 may occur. However, the first inorganic material layer 151 is formed by atomic layer deposition and has excellent stack coverage. In addition, since the structure in which the first inorganic material layer 151 is used is formed at a higher density than the structure in which the layer formed by chemical vapor deposition is used, it has improved interfacial adhesion.

An organic material layer 152 is formed on the first inorganic material layer 151. The organic material layer 152 functions to cover foreign matter or particles that may occur during a process. Foreign substances or particles may cause defects in the organic light-emitting device 140 and may cause a crack in a protective layer such as the first inorganic material layer 151. In addition, the organic material layer 152 has relatively better flexibility than the first inorganic material layer 151 and the second inorganic material layer 153, so that internal stress such as the first inorganic material layer 151 having low flexibility is reduced. It may play a role of alleviating or filling a crack in the first inorganic material layer 151. In addition, the organic material layer 152 also performs a function of flattening the surface of the organic light-emitting device 140.

Various materials may be used as the organic material layer 152, and for example, any one of an epoxy resin, an acrylic resin, a perylene resin, and a polyimide resin, or a mixture thereof may be used, but is limited thereto. no. In general, the organic material layer 152 may be coated by a process that can be performed at a low temperature such as a slit coating method, spin coating, screen printing, or the like.

A second inorganic material layer 153 is formed on the organic material layer 152. The second inorganic material layer 153 performs substantially the same function as the first inorganic material layer 151. The second inorganic material layer 153 protects the organic light-emitting device 140 from moisture, oxygen, and the like. In addition, since the first inorganic material layer 151 and the second inorganic material layer 153 are formed in a double layer, the moisture permeation rate may be lowered. The second inorganic material layer 153 may be formed of the same material as the first inorganic material layer 151, but is not limited thereto and may be formed of a different material. For example, the first inorganic material layer 151 may be made of aluminum oxide formed by atomic layer deposition, and the second inorganic material layer 153 may be silicon nitride formed by atomic layer deposition. In FIG. 2, the second inorganic material layer 153 is formed at least in the light emitting area EA. The second inorganic material layer 153 may further extend from the light emitting area EA to the side surface of the substrate 101 in order to make it more difficult to transmit moisture from the side surface of the organic light emitting display device 100 in the light emitting area EA. The second inorganic material layer 153 is formed to a thickness of 10 to 200 nm. The second inorganic material layer 153 may have a different thickness from the first inorganic material layer 151 according to process conditions or required moisture permeability.

Hereinafter, the positional relationship between the first inorganic material layer 151 and the second inorganic material layer 153 will be described in more detail. Referring to FIG. 1, a region in which the first inorganic material layer 151 and the second inorganic material layer 153 are formed is illustrated. Since the first inorganic material layer 151 is formed on the entire surface of the substrate 101, the first inorganic material layer 151 is formed in the entire area of the light emitting area EA and the pad area PA. That is, the first inorganic material layer 151 is formed to cover the wiring 125, the driving circuit 180, and the pad unit 160 on the substrate 101. Since the first inorganic material layer 151 is deposited on the entire surface of the substrate 101 without using a metal mask, arcing or foreign matter that occurs when the metal mask is used does not occur, and the cost of the metal mask can be reduced.

The second inorganic material layer 153 is formed in the light emitting area EA, but is not formed in the pad area PA. However, as shown in FIG. 1, the second inorganic material layer 153 may be formed to extend from the light emitting area EA and extend to a side edge of the substrate 101 to cover the wirings 125. In addition, depending on the design, the second inorganic material layer 153 may not extend to the side edge of the substrate 101 and may be formed only in the light emitting area EA. Alternatively, the second inorganic material layer 153 may be formed from a portion spaced 500 μm from one side of the substrate 101 on which the pad portion 160 is formed to the other side of the substrate 101.

Referring to FIG. 2, the first inorganic material layer 151 is formed on the cathode 143 in the light emitting area EA, extends toward the edge of the substrate 101 to be formed on the entire surface of the substrate 101. The first inorganic material layer 151 contacts the passivation layer 132 for protecting components of the thin film transistor 120. When the passivation layer 132 is not formed, the gate insulating layer 131 and the first inorganic material layer 151 may contact each other. In addition, when the thin film transistor 120 has a structure other than the bottom gate, for example, a coplanar structure, and the passivation layer 132 is not formed, the first inorganic material layer 151 may include the source electrode 123 and the It may be in contact with the interlayer insulating layer between the drain electrode 124 and the active layer 122.

The first inorganic material layer 151 is formed to extend from the light emitting area EA and cover the pad part 160 in the pad area FA. The pad unit 160 formed in the pad area FA is a conductive component for providing electrical connection to a separate circuit unit in the organic light emitting display device 100. For example, referring to FIG. 1, each of the pad units 160 is connected to the wiring from the driving circuit 180 or to other components of the organic light emitting display device 100. It is connected with wirings extending in the lateral direction.

The pad unit 160 is electrically connected to the flexible printed circuit board 172. The first inorganic material layer 151 is formed on the entire surface of the substrate 101 to cover the pad unit 160 without a metal mask. Therefore, in order to electrically connect the pad unit 160 and the flexible printed circuit board 172, the flexible printed circuit board 172 is pressed from the first inorganic material layer 151 on the pad unit 160, Electrical connection between the substrate 172 and the pad unit 160 may be secured.

For example, the flexible printed circuit board 172 may have a wiring printed on the substrate and a pin 171 that is connected to the wiring and protrudes from a region connected to the pad unit 160. The fin 171 has a height equal to or greater than the thickness of the first inorganic material layer 151. When the flexible printed circuit board 172 is pressed, the pin 171 may have a pointed end so that it can be more easily connected to the pad unit 160. When the flexible printed circuit board 172 is pressed against the pad unit 160, the pins 171 of the flexible printed circuit board 172 penetrate the first inorganic material layer 151 and are electrically connected to the pad unit 160. . Here, the meaning of electrically connected means that some of the material of the first inorganic material layer 151 may remain between the pin 171 and the pad unit 160 during the pressing process, but the flexible printed circuit board connected to the pad unit 160 ( Including that the resistance between the wirings of the 172 may be sufficiently low to drive the organic light emitting element 140. For example, the resistance between the pad unit 160 and the wiring of the flexible printed circuit board 172 may be 10 Ω or less, preferably 6 Ω or less, 3 Ω or more.

Electrical connection between the flexible printed circuit board 172 and the pad unit 160 with the first inorganic material layer 151 interposed therebetween may be secured by such physical pressure. However, physical contact by pressing may be implemented when the thickness of the first inorganic material layer 151 is sufficiently low to be 60 nm or less. When the thickness of the first inorganic material layer 151 is 60 nm or more, even if the flexible printed circuit board 172 is pressed against the pad unit 160, it is difficult for the pin 171 to contact the pad unit 160, and the pad unit ( It may be difficult to secure a sufficiently low resistance between the 160) and the pin 171. Therefore, when an inorganic material layer formed through low-temperature chemical vapor deposition is applied, electrical connection by physical force is practically impossible due to the thick thickness of the inorganic material layer. In the organic light emitting display device 100 according to the exemplary embodiment, the first inorganic material layer 151 is deposited without using a metal mask, and the pad unit 160 and the flexible printed circuit board 172 are formed separately. 1 The inorganic material layer 151 is electrically connected without a patterning process. Accordingly, since arcing or foreign matters are not generated by the metal mask used during patterning, defects in light emission of the organic light emitting device 140 are significantly reduced, and manufacturing cost is greatly reduced. In addition, since the metal mask is not used, the number of times of use of the metal mask is reduced, and thus the manufacturing process may be simplified. This can reduce the inflow of foreign substances in the manufacturing process.

In addition, although not shown in FIGS. 1 and 2, the driving circuit 180 may be covered by the first inorganic material layer 151 like the pad unit 160, and may be electrically connected to other components by physical pressure. .

3 is a cross-sectional view of an organic light emitting diode display according to another exemplary embodiment of the present invention. Among the constituent elements of the organic light-emitting display device 300 of FIG. 3, overlapping descriptions of constituent elements that are substantially the same as those of the organic light-emitting display device 100 of FIGS. 1 and 2 will be omitted.

Referring to FIG. 3, the first inorganic material layer 351 is formed up to the light emitting area EA, and the second inorganic material layer 353 is a front surface of the substrate 101 including the light emitting area EA and the pad area PA. Is formed in The second inorganic material layer 353 contacts the gate insulating layer 131 and extends to the pad area PA. The flexible printed circuit board 172 is connected to the pad unit 160 by pressing the second inorganic material layer 353 through the pins 171 of the flexible printed circuit board 172. The thickness of the second inorganic material layer 353 may be 10 nm to 60 nm so that the flexible printed circuit board 172 is electrically connected to the pad unit 160.

4 is a cross-sectional view of an organic light emitting diode display according to another exemplary embodiment of the present invention. Among the constituent elements of the organic light-emitting display device 400 of FIG. 4, redundant descriptions of constituent elements that are substantially the same as those of the organic light-emitting display device 100 of FIGS. 1 and 2 will be omitted.

Referring to FIG. 4, both of the first inorganic material layer 151 and the second inorganic material layer 153 are formed on the entire surface of the substrate 101 including the light emitting area EA and the pad area PA. The first inorganic material layer 451 is formed under the second inorganic material layer 453 and contacts the gate insulating layer 131. The flexible printed circuit board 172 is connected to the pad unit 160 by pressing the first inorganic material layer 451 and the second inorganic material layer 453 through the pins 171 of the flexible printed circuit board 172. In FIG. 4, both the first inorganic material layer 451 and the second inorganic material layer 453 are pressed so that the flexible printed circuit board 172 is electrically connected to the pad unit 160. The sum of the thicknesses of the 2 inorganic material layers 453 may be 10 nm to 60 nm.

5 is a flowchart of a method of manufacturing an organic light emitting diode display according to an exemplary embodiment of the present invention. A method of manufacturing the organic light emitting display device described with reference to FIG. 5 is a method of manufacturing the organic light emitting display device illustrated in FIG. 1.

First, an organic light-emitting device and a pad part are formed on a substrate (S510). A thin film transistor is formed under the organic light-emitting device, and the thin-film transistor and the organic light-emitting device are formed using a conventional, but not limited to manufacturing method. The pad portion is formed near one edge of the substrate.

Subsequently, a first inorganic material layer is formed on the entire surface of the substrate by atomic layer deposition (S520). More specifically, the step of depositing the first inorganic material layer by atomic layer deposition includes the following steps. First, a precursor gas is introduced (S521). For example, when an aluminum oxide layer is formed as a metal oxide layer as the first inorganic material layer, the precursor gas may be, for example, Trimethylaluminium (TMA), but when another metal oxide layer is formed as the first inorganic material layer, suitable Other metal precursors may be selected.

Next, the introduction of the precursor gas is stopped and the remaining precursor gas is purged by introducing a purge gas (S522). Various inert gases including argon may be used as the purge gas. The purge gas is supplied for a sufficient time so that residues contained in the precursor gas are completely removed.

Subsequently, the introduction of the purge gas is stopped, and the oxygen-containing gas is introduced as the reactant gas (S523). Oxygen The containing gas reacts with the precursor material adsorbed on the substrate surface to form a metal oxide.

Next, the introduction of the oxygen-containing gas is stopped, and the remaining oxygen reactant is purged (S524). Various inert gases including argon may be used as the purge gas. Steps S521 to S524 are repeated until the thickness of the first inorganic material layer reaches 10 to 60 nm.

After the first inorganic material layer is deposited on the entire surface of the substrate, an organic material layer is applied on the first inorganic material layer (S530). For example, the organic material layer may be formed by applying various methods for applying an organic material such as screen printing, spin coating, and slit coater method.

A second inorganic material layer is deposited on the organic material layer in the area where the organic light emitting device is formed (S540). Like the first inorganic material layer, the second inorganic material layer may be formed by atomic layer deposition, and may be formed by substantially the same steps as steps S521 to S525.

Next, a flexible printed circuit board is prepared, and the flexible printed circuit board is pressed toward the substrate to electrically connect the flexible printed circuit board and the pad portion (S550). By pressing the flexible printed circuit board, the protruding pins 171 of the flexible printed circuit board pass through the first inorganic material layer covering the pad part and are electrically connected to the pad part.

In addition, as described above in FIGS. 2 to 4, the second inorganic material layer may be formed on the entire surface of the substrate and the first inorganic material layer may be formed in the light emitting region, or both the first inorganic material layer and the second inorganic material layer are on the entire surface of the substrate. Can be formed.

In addition, in FIG. 5, a method of forming a metal oxide layer into a first inorganic material layer and a second inorganic material layer is described, but this is only an exemplary method, and silicon nitride or the like is used as the first inorganic material layer according to the materials of the precursor gas and the reactant gas. Alternatively, it may be formed as a second inorganic material layer. For example, a silicon-containing precursor gas and a nitrogen-containing reactant gas may be used to form a silicon nitride as a first inorganic layer or a second inorganic layer.

Although the embodiments of the present invention have been described in more detail with reference to the accompanying drawings, the present invention is not necessarily limited to these embodiments, and various modifications can be made without departing from the spirit of the present invention. . Accordingly, the embodiments disclosed in the present invention are not intended to limit the technical idea of the present invention, but to explain the technical idea, and the scope of the technical idea of the present invention is not limited by these embodiments. Therefore, it should be understood that the embodiments described above are illustrative and non-limiting in all respects. The scope of protection of the present invention should be interpreted by the following claims, and all technical ideas within the scope equivalent thereto should be interpreted as being included in the scope of the present invention.

100, 300, 400: organic light emitting display device
101: substrate
120: thin film transistor
121: gate electrode
122: active layer
123: source electrode
124: drain electrode
125: wiring
131: gate insulating layer
132: passivation layer
133: planarization layer
134: bank
140: organic light emitting device
141: anode
142: organic light emitting layer
143: cathode
151, 351, 451: first inorganic material layer
152: organic material layer
153, 453, 453: second organic material layer
160: pad part
171: pin
172: flexible printed circuit board
180: drive circuit

Claims (14)

Board;
A pad portion disposed on the substrate;
An organic light emitting device disposed on the substrate;
A first inorganic material layer formed on the organic light-emitting device and the pad portion and in contact with the pad portion;
An organic material layer formed on the first inorganic material layer;
A second inorganic material layer formed on the organic material layer; And
And a flexible printed circuit board electrically connected to the pad portion with the first inorganic material layer and the second inorganic material layer therebetween,
Both the first inorganic material layer and the second inorganic material layer are formed on the entire surface of the substrate,
The flexible printed circuit board includes a pin electrically connected to the pad part,
The organic light-emitting display device, wherein at least one of the first inorganic material layer and the second inorganic material layer is disposed between the fin and the pad part. The method of claim 1,
The substrate includes a light emitting area in which the organic light emitting element is formed and a pad area positioned on one side of the substrate and in which the pad part is formed. The method of claim 2,
Further comprising a driving circuit formed on the substrate,
The organic light emitting diode display device, wherein the first inorganic material layer and the second inorganic material layer formed on the entire surface of the substrate cover the driving circuit. The method of claim 2,
The flexible printed circuit board is characterized in that the flexible printed circuit board is pressed against the first inorganic material layer and the second inorganic material layer formed on the front surface of the substrate to be electrically connected to the pad unit. The method of claim 2,
The organic light-emitting display device, wherein at least one of the first inorganic material layer and the second inorganic material layer has a thickness of 10 nm or more and 60 nm or less. delete delete The method of claim 1,
A thin film transistor including a gate electrode, an active layer, a source electrode, and a drain electrode; And
Further comprising one of a gate insulating layer, an interlayer insulating layer and a passivation layer,
One of the first inorganic layer and the second inorganic layer is in contact with one of the gate insulating layer, the interlayer insulating layer, and the passivation layer. delete The method of claim 1,
The organic light emitting display device according to claim 1, wherein the sum of the thickness of the first inorganic material layer and the thickness of the second inorganic material layer is 10 nm or more and 60 nm or less. The method of claim 1,
The organic light-emitting display device, wherein the first inorganic material layer and the second inorganic material layer are made of different materials. The method of claim 1,
The organic light emitting display device, wherein the first inorganic material layer and the second inorganic material layer have different thicknesses. Forming an organic light emitting device and a pad portion on a substrate;
Depositing a first inorganic material layer covering the organic light-emitting device and the pad part on the entire surface of the substrate;
Applying an organic material layer on the first inorganic material layer;
Depositing a second inorganic material layer on the organic material layer over the entire surface of the substrate; And
Comprising the step of pressing the flexible printed circuit board toward the substrate to electrically connect the flexible printed circuit board and the pad part,
The step of depositing the first inorganic material layer on the entire surface of the substrate,
Introducing a precursor gas,
Purging the precursor gas,
Introducing a reactant gas, and
And purging the reactant gas,
The flexible printed circuit board includes a pin electrically connected to the pad part,
A method of manufacturing an organic light-emitting display device, wherein at least one of the first inorganic material layer and the second inorganic material layer is disposed between the fin and the pad part. The method of claim 13,
The method of manufacturing an organic light-emitting display device, wherein the thickness of the first inorganic material layer is 10 nm or more and 60 nm or less.

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