KR102175315B1 - Light emitting device, and lighting system - Google Patents

Abstract

The embodiment relates to a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and a lighting system.
The light emitting device according to the embodiment includes a first conductive type semiconductor layer material 112; An active layer 114 including a recess structure R under the first conductivity type semiconductor layer 112; A second conductivity type semiconductor layer under the active layer 114; It may include a carbon structure 120 under the second conductivity type semiconductor layer.

Description

Light emitting device and lighting system {LIGHT EMITTING DEVICE, AND LIGHTING SYSTEM}

The embodiment relates to a light emitting device, a method of manufacturing a light emitting device, a light emitting device package, and a lighting system.

A light emitting device may be generated by combining a group III and a group V element on the periodic table with a p-n junction diode that converts electric energy into light energy. LED can realize various colors by controlling the composition ratio of the compound semiconductor.

When a forward voltage is applied, the electrons in the n-layer and the holes in the p-layer are combined to emit energy equivalent to the energy gap between the conduction band and the balance band. It is mainly emitted in the form of heat or light, and when it is emitted in the form of light, it becomes a light emitting device.

For example, nitride semiconductors are attracting great interest in the development of optical devices and high-power electronic devices due to their high thermal stability and wide band gap energy. In particular, a blue light-emitting device, a green light-emitting device, and an ultraviolet (UV) light-emitting device using a nitride semiconductor are commercialized and widely used.

The light emitting device can be classified into a horizontal type and a vertical type according to the position of the electrode.

According to the prior art, there is a problem in that dislocations are generated due to lattice mismatch in the manufacturing process of a light emitting device, and such dislocations are expanded to lower the crystal quality of the active layer, thereby reducing luminous efficiency.

In addition, in the vertical light emitting device of the prior art, after removing the growth substrate, a reflective layer is formed to improve light extraction efficiency, but more improved light extraction efficiency is required.

In addition, according to the prior art, there is a problem in that the light absorption efficiency of the p-type semiconductor layer is relatively high, reducing the light extraction efficiency.

The embodiment is to provide a light emitting device capable of improving luminous efficiency, a method of manufacturing a light emitting device, a light emitting device package and a lighting system.

In addition, the embodiment is to provide a light emitting device capable of improving light extraction efficiency, a method of manufacturing a light emitting device, a light emitting device package, and a lighting system.

The light emitting device according to the embodiment includes a first conductivity type semiconductor layer 112; An active layer 114 including a recess structure R under the first conductivity type semiconductor layer 112; A second conductivity type semiconductor layer 116 under the active layer 114; It may include a carbon structure 120 under the second conductivity type semiconductor layer 116.

Part or all of the second conductivity-type semiconductor layer 116 overlapping the recess structure R and the upper and lower portions may be removed.

The second conductivity type semiconductor layer 116 may not vertically overlap the recess structure of the active layer.

The lighting system according to the embodiment may include a lighting module including the light emitting device.

The embodiment can provide a light emitting device capable of improving luminous efficiency by improving crystal quality, a method of manufacturing a light emitting device, a light emitting device package, and a lighting system.

In addition, the embodiment may provide a light emitting device capable of improving light extraction efficiency, a method of manufacturing a light emitting device, a light emitting device package, and a lighting system.

1 is a cross-sectional view of a light emitting device according to an embodiment.
2 to 7 are cross-sectional views of a method of manufacturing a light emitting device according to the embodiment.
8 is a cross-sectional view of a light emitting device package according to an embodiment.
9 is a perspective view of a lighting device according to the embodiment.

In the description of the embodiment, each layer (film), region, pattern, or structure is "on/over" or "under" of the substrate, each layer (film), region, pad, or patterns. In the case of being described as being formed in, "on/over" and "under" include both "directly" or "indirectly" formed do. In addition, standards for the top/top or bottom of each layer will be described based on the drawings.

(Example)

1 is a cross-sectional view of a light emitting device according to an embodiment.

The light emitting device according to the embodiment includes a first conductive type semiconductor layer 112, an active layer 114 including a recess structure R under the first conductive type semiconductor layer 112, and the active layer 114 A second conductivity type semiconductor layer 116 may be included below, and a carbon structure 120 may be included below the second conductivity type semiconductor layer 116.

5A to 5B are partially enlarged views of the first to third exemplary embodiments of the light emitting device according to the exemplary embodiment. Meanwhile, FIG. 1 is illustrated based on the third embodiment, but the embodiment is not limited to FIG. 1. Hereinafter, features of the invention will be described with reference to FIGS. 5A to 5C.

5A is a partially enlarged view 101 of the light emitting device according to the first embodiment, and according to the first embodiment, a part of the second conductivity type semiconductor layer 116 overlapping the recess structure R between the top and bottom or All can be removed.

According to the embodiment, the light extraction efficiency may be improved by partially or entirely removing the p-type semiconductor layer having a high light absorption rate of emitted light.

At this time, according to the embodiment, in the recessed structure R, which is a region in which the potential D generated in the manufacturing process of the light emitting device is expanded, the luminous efficiency is lowered due to a decrease in crystal quality. Part or all of the second conductivity-type semiconductor layer 116 overlapping the recess structure R and the upper and lower portions is removed, thereby minimizing light absorption and minimizing an effect on luminous efficiency.

In addition, according to an embodiment, a carbon structure 120 may be included on the second conductivity type semiconductor layer 116.

The carbon structure 120 may include graphene 122. In addition, in an embodiment, the graphene 122 may include a graphene quantum dot.

In an embodiment, the graphene quantum dot controls the diameter or orientation of graphene through electrospinning, etc., and includes a luminescent material (quantum dot) in graphene, and can increase the directness of the luminescent material and increase the efficiency. .

The carbon structure 120 and the recess structure R of the active layer 114 may be disposed so as not to overlap between the top and bottom. For example, the carbon structure 120 and the recess structure R of the active layer 114 may be disposed so as not to vertically overlap.

According to the embodiment, the carbon structure 120 is included on the second conductivity type semiconductor layer 116 to improve electrical conductivity, thereby improving current injection efficiency.

According to an embodiment, light extraction efficiency may be improved by scattering light emitted by including the first nanostructure 130 on the carbon structure 120.

The first nanostructure 130 may have a ball shape or a bar shape, but is not limited thereto.

The first nanostructure 130 may be an insulating material or a conductive material, but is not limited thereto. For example, the first nanostructure 130 is SiO ₂ , Al ₂ O ₃ , TiO ₂ , ZrO ₂ , YO ₃ ZrO ₂ , CuO, Cu ₂ O, Ta ₂ O ₅ , PZT(Pb(Zr, Ti)O ₃ ), Nb ₂ O ₅ , FeSO ₄ , Fe ₃ O ₄ , Fe ₂ O ₃ , Na ₂ SO ₄ , GeO ₂ And may include at least one selected from the group consisting of CdS, but is not limited thereto. The diameter of the first nanostructure 130 may be variously selected from several nm to several hundreds nm according to the type or size of the light emitting device.

In the embodiment, the first nanostructure 130 may be formed on the second conductivity type semiconductor layer 116 by using a method such as drop, dipping, or spin coating. Accordingly, the first nanostructure 130 may be formed on the top surface of the second conductivity type semiconductor layer 116, the top surface of the carbon structure 120, and the like, but is not limited thereto.

5B is a partially enlarged cross-sectional view 102 of a light emitting device according to the second embodiment.

According to the second embodiment, the carbon structure 120 may further include a carbon nanotube 124, and the carbon nanotube 124 may connect graphene 122 or graphene quantum dots to each other. have.

Accordingly, electrical conductivity can be remarkably improved, and luminous efficiency can be increased.

5C is a partially enlarged cross-sectional view 103 of a light emitting device according to the third embodiment.

The embodiment may further include a second nanostructure 132 on the recess structure R.

The second nanostructure 132 may be formed of the same shape or material as the first nanostructure 130. For example, the second nanostructure 132 may have a ball shape, a bar shape, or the like, but is not limited thereto.

In addition, the second nanostructure 132 may be an insulating material or a conductive material, but is not limited thereto. For example, the second nanostructure 132 is SiO ₂ , Al ₂ O ₃ , TiO ₂ , ZrO ₂ , YO ₃ ZrO ₂ , CuO, Cu ₂ O, Ta ₂ O ₅ , PZT(Pb(Zr, Ti)O ₃ ), Nb ₂ O ₅ , FeSO ₄ , Fe ₃ O ₄ , Fe ₂ O ₃ , Na ₂ SO ₄ , GeO ₂ And may include at least one selected from the group consisting of CdS, but is not limited thereto.

In the embodiment, since the first nanostructure 130 or the second nanostructure 132 has a refractive index different from each other, the second conductivity type semiconductor layer 116, the active layer 114, or the carbon structure 120, the active layer The light generated at 114 may be refracted by the first nanostructure 130 or the second nanostructure 132 or air, so that the light may be scattered or reflected.

The embodiment may provide a light emitting device capable of improving luminous efficiency by improving crystal quality.

In addition, the embodiment may provide a light emitting device capable of improving light extraction efficiency and a method of manufacturing the light emitting device.

Reference numbers or configurations not described in FIG. 1 will be described in the manufacturing method below.

Hereinafter, a method of manufacturing a light emitting device according to an embodiment will be described with reference to FIGS. 3 to 7, and the technical features of this invention will be described.

First, as shown in FIG. 2, a buffer layer 107 and an undoped semiconductor layer 109 may be formed on the substrate 105.

The substrate 105 may be formed of an insulating substrate or a conductive substrate. For example, the substrate 105 may be formed of at least one of a sapphire substrate (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge, but is not limited thereto.

A buffer layer 107 may be formed on the substrate 105. The buffer layer 107 can alleviate lattice mismatch between the material of the light emitting structure 110 and the substrate 105, and the material of the buffer layer 107 is a group 3-5 compound semiconductor such as GaN, InN, AlN , InGaN, AlGaN, InAlGaN, may be formed of at least one of AlInN.

For example, the buffer layer 107 may be an Al _x Ga _(1-x) N (0≤x≤1)/GaN superlattice layer, and Al _x Ga _(1-x) N (0≤x≤1) The /GaN superlattice layer may more effectively block dislocations (D) due to lattice mismatch between the material of the light emitting structure and the substrate 105.

An undoped semiconductor layer 109 may be formed on the buffer layer 107, and the undoped semiconductor layer 109 is formed of the same material as the light emitting structure 110 to be formed later to emit light with the substrate 105 In addition to solving the lattice mismatch of the structure 110, it is possible to improve the luminous efficiency by improving the crystal quality of the light emitting structure 110.

Next, a light emitting structure 110 including a first conductivity type semiconductor layer 112, an active layer 114, and a second conductivity type semiconductor layer 116 may be formed on the substrate 105.

The first conductivity type semiconductor layer 112 may be formed of a semiconductor compound. It may be implemented with a compound semiconductor such as Group 3-5 and Group 2-6, and may be doped with a first conductivity type dopant. When the first conductivity-type semiconductor layer 112 is an n-type semiconductor layer, the first conductivity-type dopant is an n-type dopant and may include Si, Ge, Sn, Se, and Te, but is not limited thereto.

The first conductivity type semiconductor layer 112 is made of a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x+y≤1). Can include. For example, the first conductivity type semiconductor layer 112 is formed of one or more of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP, InP Can be.

The first conductivity-type semiconductor layer 112 may form an n-type GaN layer using a method such as chemical vapor deposition (CVD), molecular beam epitaxy (MBE), sputtering, or hydroxide vapor phase epitaxy (HVPE). . In addition, the first conductivity-type semiconductor layer 112 is a silane containing n-type impurities such as trimethyl gallium gas (TMGa), ammonia gas (NH ₃ ), nitrogen gas (N ₂ ), and silicon (Si) in the chamber. It may be formed by injecting gas (SiH ₄ ).

According to an embodiment, the first conductivity type semiconductor layer 112 may include a single or a plurality of recess structures R concave from an upper surface. For example, the recessed structure R may have a V-shaped side cross section and a hexagonal planar shape, for example, may be formed in a hexagonal cone shape.

Each of the recess structures R may increase as the thickness of the first conductivity type semiconductor layer 112 increases, and the inclined surface may have a range of 35° to 60°, but is limited thereto. no. One or a plurality of propagating potentials D may be connected to each of the recess structures R.

For example, when the first conductivity type semiconductor layer 112 is grown in the range of 500°C to 1000°C, a recess structure R having a V shape may be provided. As another example, when the first conductive semiconductor layer 112 is formed to have a predetermined thickness and then grown using a mask pattern, a recess structure R may be formed.

Next, as shown in FIG. 3, an active layer 114 may be formed on the first conductivity type semiconductor layer 112, and a second conductivity type semiconductor layer 116 may be formed on the active layer 114. .

4 is an enlarged view of area A of FIG. 3.

The active layer 114 may have a recess structure corresponding to the recess structure R formed in the first conductivity type semiconductor layer 112.

In the active layer 114, electrons injected through the first conductivity-type semiconductor layer 112 and holes injected through the second conductivity-type semiconductor layer 116 formed thereafter meet each other to form an energy band specific to the active layer (light emitting layer) material. It is a layer that emits light with energy determined by.

The active layer 114 may be formed of at least one of a single quantum well structure, a multi quantum well structure (MQW), a quantum-wire structure, or a quantum dot structure. For example, in the active layer 114, trimethyl gallium gas (TMGa), ammonia gas (NH ₃ ), nitrogen gas (N ₂ ), and trimethyl indium gas (TMIn) may be injected to form a multiple quantum well structure. It is not limited thereto.

The well layer 114W/barrier layer 114B of the active layer 114 is any one of InGaN/GaN, InGaN/InGaN, GaN/AlGaN, InAlGaN/GaN, GaAs(InGaAs)/AlGaAs, GaP(InGaP)/AlGaP It may be formed in the above pair structure, but is not limited thereto. The well layer 114W may be formed of a material having a band gap lower than that of the barrier layer 114B.

The second conductivity type semiconductor layer 116 may be formed of a semiconductor compound. It may be implemented as a compound semiconductor such as Group 3-5 and Group 2-6, and may be doped with a second conductivity type dopant.

For example, the second conductivity type semiconductor layer 116 has a composition formula of In _x Al _y Ga _{1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x+y≤1) It may include a semiconductor material having. When the second conductivity-type semiconductor layer 116 is a p-type semiconductor layer, the second conductivity-type dopant is a p-type dopant, and may include Mg, Zn, Ca, Sr, Ba, and the like.

The second conductivity type semiconductor layer 116 is a vicetyl cyclo containing p-type impurities such as trimethyl gallium gas (TMGa), ammonia gas (NH ₃ ), nitrogen gas (N ₂ ), and magnesium (Mg) in the chamber. Pentadienyl magnesium (EtCp ₂ Mg) {Mg(C ₂ H ₅ C ₅ H ₄ ) ₂ } may be implanted to form a p-type GaN layer, but is not limited thereto.

In an embodiment, the first conductivity-type semiconductor layer 112 may be implemented as an n-type semiconductor layer, and the second conductivity-type semiconductor layer 116 may be implemented as a p-type semiconductor layer, but is not limited thereto. In addition, a semiconductor, for example, an n-type semiconductor layer (not shown) having a polarity opposite to that of the second conductivity type may be formed on the second conductivity type semiconductor layer 116. Accordingly, the light emitting structure 110 may be implemented in any one of an n-p junction structure, a p-n junction structure, an n-p-n junction structure, and a p-n-p junction structure.

Features of the light emitting device according to the first to third embodiments will be described with reference to FIGS. 5A to 5C.

5A to 5B are partially enlarged views of the first to third exemplary embodiments of the light emitting device according to the exemplary embodiment.

5A is a partially enlarged view 101 of a light emitting device according to the first embodiment.

First, according to the first embodiment, a part or all of the second conductivity type semiconductor layer 116 overlapping the recess structure R and the top and bottom may be removed.

According to the embodiment, as shown in FIG. 4, the second conductivity-type semiconductor layer 116 may be formed on the recess structure R and then removed, but a lift-off method may be employed.

For example, after forming a predetermined mask pattern (not shown) on the recess structure R, a second conductivity type semiconductor layer 116 is formed, and the second conductivity type semiconductor layer 116 is removed. It is possible to prevent the conductive semiconductor layer from being disposed.

According to the embodiment, the light extraction efficiency may be improved by partially or entirely removing the p-type semiconductor layer having a high light absorption rate of emitted light.

At this time, according to the embodiment, in the recessed structure R, which is a region in which the potential D generated in the manufacturing process of the light emitting device is expanded, the luminous efficiency is lowered due to a decrease in crystal quality. Part or all of the second conductivity type semiconductor layer 116 overlapping the recess structure R and the upper and lower portions is removed, thereby minimizing light absorption and minimizing the effect on luminous efficiency.

Next, according to an embodiment, the carbon structure 120 may be formed on the second conductivity type semiconductor layer 116.

The carbon structure 120 may include graphene 122. In addition, in an embodiment, the graphene 122 may include a graphene quantum dot.

In an embodiment, the graphene quantum dot controls the diameter or orientation of graphene through electrospinning, etc., and includes a luminescent material (quantum dot) in graphene, and can increase the directness of the luminescent material and increase the efficiency. .

The carbon structure 120 and the recess structure R of the active layer 114 may be disposed so as not to overlap between the top and bottom.

For example, after forming a predetermined second mask pattern (not shown) on the recess structure R, the carbon structure 120 and the carbon structure 120 and the carbon structure 120 are removed by removing the second mask pattern after the process of forming the carbon structure 120 is performed. The recess structure R of the active layer 114 may be disposed so as not to vertically overlap.

According to the embodiment, the carbon structure 120 is included on the second conductivity type semiconductor layer 116 to improve electrical conductivity, thereby improving current injection efficiency.

In addition, according to an exemplary embodiment, light extraction efficiency may be improved by scattering light emitted by including the first nanostructure 130 on the carbon structure 120.

In the embodiment, the processed nanostructure may be formed on the second conductivity type semiconductor layer 116 using a method such as drop, dipping, or spin coating. Accordingly, the first nanostructure 130 may be formed on the top surface of the second conductivity type semiconductor layer 116, the top surface of the carbon structure 120, and the like, but is not limited thereto.

The first nanostructure 130 may have a ball shape or a bar shape, but is not limited thereto.

The first nanostructure 130 may be an insulating material or a conductive material, but is not limited thereto. For example, the first nanostructure 130 is SiO ₂ , Al ₂ O ₃ , TiO ₂ , ZrO ₂ , YO ₃ ZrO ₂ , CuO, Cu ₂ O, Ta ₂ O ₅ , PZT(Pb(Zr, Ti)O ₃ ), Nb ₂ O ₅ , FeSO ₄ , Fe ₃ O ₄ , Fe ₂ O ₃ , Na ₂ SO ₄ , GeO ₂ And may include at least one selected from the group consisting of CdS, but is not limited thereto. The diameter of the first nanostructure 130 may be variously selected from several nm to several hundreds nm according to the type or size of the light emitting device.

In the embodiment, since the first nanostructure 130 has a refractive index different from each other, the second conductivity type semiconductor layer 116, the active layer 114, or the carbon structure 120, the light generated by the active layer 114 is The light may be scattered or reflected by being refracted by the first nanostructure 130 or air.

Next, FIG. 5B is a partially enlarged cross-sectional view 102 of a light emitting device according to the second embodiment.

According to the second embodiment, the carbon nanotube 124 may be further formed in the configuration of the carbon structure 120, and the carbon nanotube 124 connects the graphene 122 or the graphene quantum dots to each other. I can.

Accordingly, electrical conductivity can be remarkably improved, and luminous efficiency can be increased.

Next, FIG. 5C is a partially enlarged cross-sectional view 103 of a light emitting device according to the third embodiment.

According to the third embodiment, a second nanostructure 132 may be further formed on the recess structure R.

The second nanostructure 132 may be formed of the same shape or material as the first nanostructure 130. For example, the second nanostructure 132 may have a ball shape, a bar shape, or the like, but is not limited thereto.

In addition, the second nanostructure 132 may be an insulating material or a conductive material, but is not limited thereto. For example, the second nanostructure 132 is SiO ₂ , Al ₂ O ₃ , TiO ₂ , ZrO ₂ , YO ₃ ZrO ₂ , CuO, Cu ₂ O, Ta ₂ O ₅ , PZT(Pb(Zr, Ti)O ₃ ), Nb ₂ O ₅ , FeSO ₄ , Fe ₃ O ₄ , Fe ₂ O ₃ , Na ₂ SO ₄ , GeO ₂ And may include at least one selected from the group consisting of CdS, but is not limited thereto.

In the embodiment, since the second nanostructure 132 has a different refractive index from the second conductivity type semiconductor layer 116, the active layer 114, or the carbon structure 120, light generated by the active layer 114 is Light may be scattered or reflected by being refracted by the second nanostructure 132 or air.

The embodiment may provide a light emitting device capable of improving luminous efficiency by improving crystal quality.

In addition, the embodiment may provide a light emitting device capable of improving light extraction efficiency and a method of manufacturing the light emitting device.

Next, as shown in FIG. 6, a second electrode layer 140 may be formed on the carbon structure 120.

The second electrode layer 140 may include a reflective layer 142, a bonding layer (not shown), and a conductive support substrate 144. The second electrode layer 140 may be bonded to the carbon structure 120 by a bonding method, but is not limited thereto.

The reflective layer 142 may be formed of a material having excellent reflectivity and excellent electrical contact. For example, it may be formed of a metal or alloy including at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, and Hf. In addition, the reflective layer 142 may be formed in a multilayer using the metal or alloy and a light-transmitting conductive material such as IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, for example, IZO/Ni, AZO. /Ag, IZO/Ag/Ni, AZO/Ag/Ni, etc. can be stacked.

In addition, when the second electrode layer 140 includes a bonding layer, the reflective layer 142 may function as a bonding layer, or the bonding layer may be formed of a material having excellent bonding strength. For example, it may include at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, or Ta.

The conductive support substrate 144 may be made of a metal, a metal alloy, or a conductive semiconductor material having excellent electrical conductivity so that carriers can be efficiently injected. For example, the support substrate 144 is copper (Cu), gold (Au), copper alloy (Cu Alloy), nickel (Ni-nickel), copper-tungsten (Cu-W), a carrier wafer (eg, GaN , Si, Ge, GaAs, ZnO, SiGe, SiC, etc.), and the like) may be optionally included.

Next, as shown in FIG. 7, the substrate 105 may be removed so that the first conductivity type semiconductor layer 112 is exposed. As a method of removing the substrate 105, a high-power laser may be used to separate the substrate or a chemical etching method may be used. Also, the substrate 105 may be removed by physically grinding.

For example, in the laser lift-off method, when a predetermined energy is applied at room temperature, energy is absorbed at the interface between the substrate 105 and the light emitting structure, and the bonding surface of the light emitting structure is thermally decomposed to separate the substrate 105 from the light emitting structure. can do.

Thereafter, the exposed undoped semiconductor layer 109 and/or the buffer layer 107 may be removed, but is not limited thereto.

Then, the first electrode 150 may be formed on the exposed first conductivity type semiconductor layer 112. The first electrode 150 may include an ohmic layer, a reflective layer, and the like. For example, the first electrode 150 is formed of a metal or alloy containing at least one of Ti, Ir, Ru, Mg, Zn, Pt, Au, Hf, Ag, Ni, Al, Rh, Pd, I can.

In addition, in the embodiment, a predetermined light extraction pattern (not shown) may be formed on the first conductivity type semiconductor layer 112. For example, an uneven structure or a photonic crystal structure may be formed as a light extraction pattern, but the present invention is not limited thereto.

The embodiment can provide a light emitting device capable of improving luminous efficiency by improving crystal quality, a method of manufacturing a light emitting device, a light emitting device package, and a lighting system.

In addition, the embodiment may provide a light emitting device capable of improving light extraction efficiency, a method of manufacturing a light emitting device, a light emitting device package, and a lighting system.

8 is a view showing a light emitting device package 200 to which a light emitting device according to an embodiment is applied.

Referring to FIG. 8, the light emitting device package according to the embodiment includes a body 205, a first lead electrode 213 and a second lead electrode 214 disposed on the body 205, and the body 205 And a light emitting device provided on and electrically connected to the first and second lead electrodes 213 and 214, and a molding member 240 surrounding the light emitting device.

The body 205 may be formed of a silicon material, a synthetic resin material, or a metal material, and an inclined surface may be formed around the light emitting device.

The first lead electrode 213 and the second lead electrode 214 are electrically separated from each other and provide power to the light emitting device. In addition, the first lead electrode 213 and the second lead electrode 214 reflect light generated from the light emitting device to increase light efficiency, and serve to discharge heat generated from the light emitting device to the outside. You can also do it.

The light emitting device may be disposed on the body 205 or may be disposed on the first lead electrode 213 or the second lead electrode 214.

The light emitting device may be electrically connected to the first lead electrode 213 and the second lead electrode 214 by any one of a wire method, a flip chip method, or a die bonding method.

In the embodiment, the light emitting device is mounted on the second lead electrode 214 and may be connected to the first lead electrode 213 and the wire 230, but the embodiment is not limited thereto.

The molding member 240 may surround the light emitting device to protect the light emitting device. In addition, a phosphor (not shown) may be included in the molding member 240 to change a wavelength of light emitted from the light emitting device.

A plurality of light emitting devices or light emitting device packages according to the embodiment may be arrayed on a substrate, and an optical member such as a lens, a light guide plate, a prism sheet, and a diffusion sheet may be disposed on an optical path of the light emitting device package. Such a light emitting device package, substrate, and optical member may function as a light unit. The light unit may be implemented in a top view or a side view type, and may be provided to display devices such as portable terminals and notebook computers, or may be variously applied to lighting devices and indication devices. Another embodiment may be implemented as a lighting device including the light emitting device or the light emitting device package described in the above-described embodiments. For example, the lighting device may include a lamp, a street light, an electric sign, and a headlamp.

9 is an exploded perspective view of a lighting device according to an embodiment.

Referring to FIG. 9, the lighting device according to the embodiment includes a cover 2100, a light source module 2200, a radiator 2400, a power supply unit 2600, an inner case 2700, and a socket 2800. I can. In addition, the lighting device according to the embodiment may further include one or more of a member 2300 and a holder 2500. The light source module 2200 may include a light emitting device package according to the embodiment.

For example, the cover 2100 may have a shape of a bulb or a hemisphere, and may be provided in a shape with a hollow and an open portion. The cover 2100 may be optically coupled to the light source module 2200. For example, the cover 2100 may diffuse, scatter, or excite light provided from the light source module 2200. The cover 2100 may be a kind of optical member. The cover 2100 may be coupled to the radiator 2400. The cover 2100 may have a coupling portion coupled to the radiator 2400.

A milky white paint may be coated on the inner surface of the cover 2100. The milky white paint may include a diffuser that diffuses light. The surface roughness of the inner surface of the cover 2100 may be larger than the surface roughness of the outer surface of the cover 2100. This is to allow light from the light source module 2200 to be sufficiently scattered and diffused to be emitted to the outside.

The material of the cover 2100 may be glass, plastic, polypropylene (PP), polyethylene (PE), polycarbonate (PC), or the like. Here, polycarbonate is excellent in light resistance, heat resistance, and strength. The cover 2100 may be transparent or opaque so that the light source module 2200 is visible from the outside. The cover 2100 may be formed through blow molding.

The light source module 2200 may be disposed on one surface of the radiator 2400. Accordingly, heat from the light source module 2200 is conducted to the radiator 2400. The light source module 2200 may include a light source unit 2210, a connection plate 2230, and a connector 2250.

The member 2300 is disposed on an upper surface of the radiator 2400 and has guide grooves 2310 into which a plurality of light source units 2210 and a connector 2250 are inserted. The guide groove 2310 corresponds to the substrate and the connector 2250 of the light source unit 2210.

The surface of the member 2300 may be coated or coated with a light reflective material. For example, the surface of the member 2300 may be coated or coated with a white paint. The member 2300 reflects light reflected on the inner surface of the cover 2100 and returning toward the light source module 2200 toward the cover 2100. Therefore, it is possible to improve the light efficiency of the lighting device according to the embodiment.

The member 2300 may be made of an insulating material, for example. The connection plate 2230 of the light source module 2200 may include an electrically conductive material. Accordingly, electrical contact may be made between the radiator 2400 and the connection plate 2230. The member 2300 is made of an insulating material to block an electrical short between the connection plate 2230 and the radiator 2400. The radiator 2400 receives heat from the light source module 2200 and heat from the power supply unit 2600 to radiate heat.

The holder 2500 blocks the receiving groove 2719 of the insulating part 2710 of the inner case 2700. Accordingly, the power supply unit 2600 accommodated in the insulating unit 2710 of the inner case 2700 is sealed. The holder 2500 has a guide protrusion 2510. The guide protrusion 2510 has a hole through which the protrusion 2610 of the power supply unit 2600 passes.

The power supply unit 2600 processes or converts an electrical signal provided from the outside and provides it to the light source module 2200. The power supply unit 2600 is accommodated in the storage groove 2719 of the inner case 2700 and is sealed inside the inner case 2700 by the holder 2500.

The power supply unit 2600 may include a protrusion 2610, a guide portion 2630, a base 2650, and an extension 2670.

The guide portion 2630 has a shape protruding outward from one side of the base 2650. The guide part 2630 may be inserted into the holder 2500. A number of components may be disposed on one surface of the base 2650. A number of components include, for example, a DC converter for converting AC power provided from an external power source to DC power, a driving chip for controlling the driving of the light source module 2200, and an ESD for protecting the light source module 2200. (ElectroStatic discharge) may include a protection element, but is not limited thereto.

The extension part 2670 has a shape protruding outward from the other side of the base 2650. The extension part 2670 is inserted into the connection part 2750 of the inner case 2700 and receives an electrical signal from the outside. For example, the extension part 2670 may be provided equal to or smaller than the width of the connection part 2750 of the inner case 2700. Each end of the "+ wire" and "- wire" may be electrically connected to the extension part 2670, and the other end of the "+ wire" and "- wire" may be electrically connected to the socket 2800. .

The inner case 2700 may include a molding unit together with the power supply unit 2600 therein. The molding part is a part where the molding liquid is solidified, and allows the power supply part 2600 to be fixed inside the inner case 2700.

Features, structures, effects, and the like described in the embodiments above are included in at least one embodiment, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in each embodiment can be implemented by combining or modifying other embodiments by a person having ordinary knowledge in the field to which the embodiments belong. Therefore, contents related to such combinations and modifications should be interpreted as being included in the scope of the embodiments.

Although the embodiments have been described above, these are only examples and are not intended to limit the embodiments, and those of ordinary skill in the field to which the embodiments belong are not departing from the essential characteristics of the embodiments. It will be seen that branch transformation and application are possible. For example, each component specifically shown in the embodiment can be modified and implemented. And differences related to these modifications and applications should be construed as being included in the scope of the embodiments set in the appended claims.

First conductivity type semiconductor layer 112, recess structure (R),
An active layer 114, a second conductivity type semiconductor layer 116,
Carbon structure 120, graphene 122,
Carbon nanotube(124)

Claims (9)

A first conductivity type semiconductor layer;
An active layer disposed under the first conductivity type semiconductor layer;
A second conductivity type semiconductor layer disposed under the active layer; And
Including; a carbon structure disposed under the second conductivity type semiconductor layer,
The first conductivity type semiconductor layer is formed on a lower surface facing the active layer, and includes a first recess having a concave shape from the lower surface to the upper surface direction of the first conductivity type semiconductor layer,
The active layer is formed on a lower surface facing the second conductivity type semiconductor layer, and includes a second recess having a concave shape from the lower surface to the upper surface of the active layer,
The second recess is formed in a region corresponding to the first recess in a vertical direction,
The second conductivity-type semiconductor layer and the carbon structure do not overlap the first and second recesses in a vertical direction. delete The method of claim 1,
The carbon structure is a light emitting device including graphene or graphene quantum dots. delete delete The method according to claim 1 or 3,
A light emitting device disposed on the carbon structure and further comprising a first nanostructure including an insulating or conductive nanomaterial. The method of claim 6,
Further comprising a second nanostructure disposed in the second recess,
The second nanostructure is an insulating or conductive nanostructure. delete delete

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