KR102145539B1 - Hetero-cyclic compound and organic light emitting device comprising the same - Google Patents
Hetero-cyclic compound and organic light emitting device comprising the same Download PDFInfo
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- KR102145539B1 KR102145539B1 KR1020170134731A KR20170134731A KR102145539B1 KR 102145539 B1 KR102145539 B1 KR 102145539B1 KR 1020170134731 A KR1020170134731 A KR 1020170134731A KR 20170134731 A KR20170134731 A KR 20170134731A KR 102145539 B1 KR102145539 B1 KR 102145539B1
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- 150000002391 heterocyclic compounds Chemical class 0.000 title abstract description 3
- 150000001875 compounds Chemical class 0.000 claims description 155
- -1 Biphenylyl Chemical group 0.000 claims description 51
- 239000011368 organic material Substances 0.000 claims description 35
- 125000003118 aryl group Chemical group 0.000 claims description 33
- 239000000126 substance Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 18
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 18
- 230000000903 blocking effect Effects 0.000 claims description 17
- 229910052760 oxygen Inorganic materials 0.000 claims description 16
- 125000000217 alkyl group Chemical group 0.000 claims description 15
- 125000000623 heterocyclic group Chemical group 0.000 claims description 14
- 229910052717 sulfur Inorganic materials 0.000 claims description 12
- 229910052739 hydrogen Inorganic materials 0.000 claims description 9
- 239000001257 hydrogen Substances 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 125000000732 arylene group Chemical group 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 claims description 5
- 125000005549 heteroarylene group Chemical group 0.000 claims description 5
- 125000006819 (C2-60) heteroaryl group Chemical group 0.000 claims description 4
- 150000002431 hydrogen Chemical class 0.000 claims description 4
- 125000002178 anthracenyl group Chemical group C1(=CC=CC2=CC3=CC=CC=C3C=C12)* 0.000 claims description 3
- 125000005842 heteroatom Chemical group 0.000 claims description 3
- 125000001624 naphthyl group Chemical group 0.000 claims description 3
- 125000001725 pyrenyl group Chemical group 0.000 claims description 3
- 125000001792 phenanthrenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3C=CC12)* 0.000 claims description 2
- 125000003960 triphenylenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3C3=CC=CC=C3C12)* 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 177
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 142
- 238000004519 manufacturing process Methods 0.000 description 96
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 81
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 62
- 238000002360 preparation method Methods 0.000 description 62
- 238000001914 filtration Methods 0.000 description 53
- 230000002829 reductive effect Effects 0.000 description 43
- 238000002347 injection Methods 0.000 description 40
- 239000007924 injection Substances 0.000 description 40
- YLQBMQCUIZJEEH-UHFFFAOYSA-N Furan Chemical group C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 39
- 239000012299 nitrogen atmosphere Substances 0.000 description 39
- 230000032258 transport Effects 0.000 description 37
- 230000000052 comparative effect Effects 0.000 description 33
- 239000000463 material Substances 0.000 description 31
- 238000010438 heat treatment Methods 0.000 description 28
- 238000003756 stirring Methods 0.000 description 28
- 230000005525 hole transport Effects 0.000 description 27
- TYJJADVDDVDEDZ-UHFFFAOYSA-M potassium hydrogencarbonate Chemical compound [K+].OC([O-])=O TYJJADVDDVDEDZ-UHFFFAOYSA-M 0.000 description 27
- 125000004432 carbon atom Chemical group C* 0.000 description 21
- 125000001424 substituent group Chemical group 0.000 description 18
- 239000000758 substrate Substances 0.000 description 17
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 16
- MXQOYLRVSVOCQT-UHFFFAOYSA-N palladium;tritert-butylphosphane Chemical compound [Pd].CC(C)(C)P(C(C)(C)C)C(C)(C)C.CC(C)(C)P(C(C)(C)C)C(C)(C)C MXQOYLRVSVOCQT-UHFFFAOYSA-N 0.000 description 16
- 239000008096 xylene Substances 0.000 description 16
- 238000000151 deposition Methods 0.000 description 14
- 0 *c1c(*)c(cccc23)c2c2c1cccc2C3(c1ccccc1)c1ccccc1 Chemical compound *c1c(*)c(cccc23)c2c2c1cccc2C3(c1ccccc1)c1ccccc1 0.000 description 13
- 229910052782 aluminium Inorganic materials 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 239000012153 distilled water Substances 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- HMUNWXXNJPVALC-UHFFFAOYSA-N 1-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)C(CN1CC2=C(CC1)NN=N2)=O HMUNWXXNJPVALC-UHFFFAOYSA-N 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 9
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 8
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 8
- MFRIHAYPQRLWNB-UHFFFAOYSA-N sodium tert-butoxide Chemical compound [Na+].CC(C)(C)[O-] MFRIHAYPQRLWNB-UHFFFAOYSA-N 0.000 description 8
- 238000006467 substitution reaction Methods 0.000 description 8
- 125000003342 alkenyl group Chemical group 0.000 description 7
- 125000000753 cycloalkyl group Chemical group 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 230000001629 suppression Effects 0.000 description 7
- YQDSWSPIWVQKBC-UHFFFAOYSA-N 1h-cyclopenta[l]phenanthrene Chemical compound C12=CC=CC=C2C2=CC=CC=C2C2=C1CC=C2 YQDSWSPIWVQKBC-UHFFFAOYSA-N 0.000 description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 6
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 239000010406 cathode material Substances 0.000 description 6
- 238000005406 washing Methods 0.000 description 6
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 5
- 150000004982 aromatic amines Chemical class 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical group C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 4
- WZFUQSJFWNHZHM-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)CC(=O)N1CC2=C(CC1)NN=N2 WZFUQSJFWNHZHM-UHFFFAOYSA-N 0.000 description 4
- DDGPPAMADXTGTN-UHFFFAOYSA-N 2-chloro-4,6-diphenyl-1,3,5-triazine Chemical compound N=1C(Cl)=NC(C=2C=CC=CC=2)=NC=1C1=CC=CC=C1 DDGPPAMADXTGTN-UHFFFAOYSA-N 0.000 description 4
- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical compound C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- 125000005264 aryl amine group Chemical group 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 4
- 239000003599 detergent Substances 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- IMKMFBIYHXBKRX-UHFFFAOYSA-M lithium;quinoline-2-carboxylate Chemical compound [Li+].C1=CC=CC2=NC(C(=O)[O-])=CC=C21 IMKMFBIYHXBKRX-UHFFFAOYSA-M 0.000 description 4
- 229910000027 potassium carbonate Inorganic materials 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- FIDRAVVQGKNYQK-UHFFFAOYSA-N 1,2,3,4-tetrahydrotriazine Chemical compound C1NNNC=C1 FIDRAVVQGKNYQK-UHFFFAOYSA-N 0.000 description 3
- OHVLMTFVQDZYHP-UHFFFAOYSA-N 1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-2-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]ethanone Chemical compound N1N=NC=2CN(CCC=21)C(CN1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)=O OHVLMTFVQDZYHP-UHFFFAOYSA-N 0.000 description 3
- LDXJRKWFNNFDSA-UHFFFAOYSA-N 2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]ethanone Chemical compound C1CN(CC2=NNN=C21)CC(=O)N3CCN(CC3)C4=CN=C(N=C4)NCC5=CC(=CC=C5)OC(F)(F)F LDXJRKWFNNFDSA-UHFFFAOYSA-N 0.000 description 3
- AYHGAQGOMUQMTR-UHFFFAOYSA-N 2-(4-bromophenyl)-4,6-diphenyl-1,3,5-triazine Chemical compound C1=CC(Br)=CC=C1C1=NC(C=2C=CC=CC=2)=NC(C=2C=CC=CC=2)=N1 AYHGAQGOMUQMTR-UHFFFAOYSA-N 0.000 description 3
- JAUCIDPGGHZXRP-UHFFFAOYSA-N 4-phenyl-n-(4-phenylphenyl)aniline Chemical compound C=1C=C(C=2C=CC=CC=2)C=CC=1NC(C=C1)=CC=C1C1=CC=CC=C1 JAUCIDPGGHZXRP-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical group C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 3
- 125000002877 alkyl aryl group Chemical group 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 239000010405 anode material Substances 0.000 description 3
- 125000003710 aryl alkyl group Chemical group 0.000 description 3
- 125000001769 aryl amino group Chemical group 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical group C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 description 3
- 125000006267 biphenyl group Chemical group 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 229920001940 conductive polymer Polymers 0.000 description 3
- 125000004185 ester group Chemical group 0.000 description 3
- 238000004770 highest occupied molecular orbital Methods 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- VWXSLLOSYCKNCF-UHFFFAOYSA-N n-phenyl-4-(4-phenylphenyl)aniline Chemical compound C=1C=C(C=2C=CC(=CC=2)C=2C=CC=CC=2)C=CC=1NC1=CC=CC=C1 VWXSLLOSYCKNCF-UHFFFAOYSA-N 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 230000009257 reactivity Effects 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- ASGMFNBUXDJWJJ-JLCFBVMHSA-N (1R,3R)-3-[[3-bromo-1-[4-(5-methyl-1,3,4-thiadiazol-2-yl)phenyl]pyrazolo[3,4-d]pyrimidin-6-yl]amino]-N,1-dimethylcyclopentane-1-carboxamide Chemical compound BrC1=NN(C2=NC(=NC=C21)N[C@H]1C[C@@](CC1)(C(=O)NC)C)C1=CC=C(C=C1)C=1SC(=NN=1)C ASGMFNBUXDJWJJ-JLCFBVMHSA-N 0.000 description 2
- UAOUIVVJBYDFKD-XKCDOFEDSA-N (1R,9R,10S,11R,12R,15S,18S,21R)-10,11,21-trihydroxy-8,8-dimethyl-14-methylidene-4-(prop-2-enylamino)-20-oxa-5-thia-3-azahexacyclo[9.7.2.112,15.01,9.02,6.012,18]henicosa-2(6),3-dien-13-one Chemical compound C([C@@H]1[C@@H](O)[C@@]23C(C1=C)=O)C[C@H]2[C@]12C(N=C(NCC=C)S4)=C4CC(C)(C)[C@H]1[C@H](O)[C@]3(O)OC2 UAOUIVVJBYDFKD-XKCDOFEDSA-N 0.000 description 2
- AOSZTAHDEDLTLQ-AZKQZHLXSA-N (1S,2S,4R,8S,9S,11S,12R,13S,19S)-6-[(3-chlorophenyl)methyl]-12,19-difluoro-11-hydroxy-8-(2-hydroxyacetyl)-9,13-dimethyl-6-azapentacyclo[10.8.0.02,9.04,8.013,18]icosa-14,17-dien-16-one Chemical compound C([C@@H]1C[C@H]2[C@H]3[C@]([C@]4(C=CC(=O)C=C4[C@@H](F)C3)C)(F)[C@@H](O)C[C@@]2([C@@]1(C1)C(=O)CO)C)N1CC1=CC=CC(Cl)=C1 AOSZTAHDEDLTLQ-AZKQZHLXSA-N 0.000 description 2
- SZUVGFMDDVSKSI-WIFOCOSTSA-N (1s,2s,3s,5r)-1-(carboxymethyl)-3,5-bis[(4-phenoxyphenyl)methyl-propylcarbamoyl]cyclopentane-1,2-dicarboxylic acid Chemical compound O=C([C@@H]1[C@@H]([C@](CC(O)=O)([C@H](C(=O)N(CCC)CC=2C=CC(OC=3C=CC=CC=3)=CC=2)C1)C(O)=O)C(O)=O)N(CCC)CC(C=C1)=CC=C1OC1=CC=CC=C1 SZUVGFMDDVSKSI-WIFOCOSTSA-N 0.000 description 2
- GHYOCDFICYLMRF-UTIIJYGPSA-N (2S,3R)-N-[(2S)-3-(cyclopenten-1-yl)-1-[(2R)-2-methyloxiran-2-yl]-1-oxopropan-2-yl]-3-hydroxy-3-(4-methoxyphenyl)-2-[[(2S)-2-[(2-morpholin-4-ylacetyl)amino]propanoyl]amino]propanamide Chemical compound C1(=CCCC1)C[C@@H](C(=O)[C@@]1(OC1)C)NC([C@H]([C@@H](C1=CC=C(C=C1)OC)O)NC([C@H](C)NC(CN1CCOCC1)=O)=O)=O GHYOCDFICYLMRF-UTIIJYGPSA-N 0.000 description 2
- QFLWZFQWSBQYPS-AWRAUJHKSA-N (3S)-3-[[(2S)-2-[[(2S)-2-[5-[(3aS,6aR)-2-oxo-1,3,3a,4,6,6a-hexahydrothieno[3,4-d]imidazol-4-yl]pentanoylamino]-3-methylbutanoyl]amino]-3-(4-hydroxyphenyl)propanoyl]amino]-4-[1-bis(4-chlorophenoxy)phosphorylbutylamino]-4-oxobutanoic acid Chemical compound CCCC(NC(=O)[C@H](CC(O)=O)NC(=O)[C@H](Cc1ccc(O)cc1)NC(=O)[C@@H](NC(=O)CCCCC1SC[C@@H]2NC(=O)N[C@H]12)C(C)C)P(=O)(Oc1ccc(Cl)cc1)Oc1ccc(Cl)cc1 QFLWZFQWSBQYPS-AWRAUJHKSA-N 0.000 description 2
- IWZSHWBGHQBIML-ZGGLMWTQSA-N (3S,8S,10R,13S,14S,17S)-17-isoquinolin-7-yl-N,N,10,13-tetramethyl-2,3,4,7,8,9,11,12,14,15,16,17-dodecahydro-1H-cyclopenta[a]phenanthren-3-amine Chemical compound CN(C)[C@H]1CC[C@]2(C)C3CC[C@@]4(C)[C@@H](CC[C@@H]4c4ccc5ccncc5c4)[C@@H]3CC=C2C1 IWZSHWBGHQBIML-ZGGLMWTQSA-N 0.000 description 2
- ONBQEOIKXPHGMB-VBSBHUPXSA-N 1-[2-[(2s,3r,4s,5r)-3,4-dihydroxy-5-(hydroxymethyl)oxolan-2-yl]oxy-4,6-dihydroxyphenyl]-3-(4-hydroxyphenyl)propan-1-one Chemical compound O[C@@H]1[C@H](O)[C@@H](CO)O[C@H]1OC1=CC(O)=CC(O)=C1C(=O)CCC1=CC=C(O)C=C1 ONBQEOIKXPHGMB-VBSBHUPXSA-N 0.000 description 2
- UNILWMWFPHPYOR-KXEYIPSPSA-M 1-[6-[2-[3-[3-[3-[2-[2-[3-[[2-[2-[[(2r)-1-[[2-[[(2r)-1-[3-[2-[2-[3-[[2-(2-amino-2-oxoethoxy)acetyl]amino]propoxy]ethoxy]ethoxy]propylamino]-3-hydroxy-1-oxopropan-2-yl]amino]-2-oxoethyl]amino]-3-[(2r)-2,3-di(hexadecanoyloxy)propyl]sulfanyl-1-oxopropan-2-yl Chemical compound O=C1C(SCCC(=O)NCCCOCCOCCOCCCNC(=O)COCC(=O)N[C@@H](CSC[C@@H](COC(=O)CCCCCCCCCCCCCCC)OC(=O)CCCCCCCCCCCCCCC)C(=O)NCC(=O)N[C@H](CO)C(=O)NCCCOCCOCCOCCCNC(=O)COCC(N)=O)CC(=O)N1CCNC(=O)CCCCCN\1C2=CC=C(S([O-])(=O)=O)C=C2CC/1=C/C=C/C=C/C1=[N+](CC)C2=CC=C(S([O-])(=O)=O)C=C2C1 UNILWMWFPHPYOR-KXEYIPSPSA-M 0.000 description 2
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical group C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 description 2
- YSUIQYOGTINQIN-UZFYAQMZSA-N 2-amino-9-[(1S,6R,8R,9S,10R,15R,17R,18R)-8-(6-aminopurin-9-yl)-9,18-difluoro-3,12-dihydroxy-3,12-bis(sulfanylidene)-2,4,7,11,13,16-hexaoxa-3lambda5,12lambda5-diphosphatricyclo[13.2.1.06,10]octadecan-17-yl]-1H-purin-6-one Chemical compound NC1=NC2=C(N=CN2[C@@H]2O[C@@H]3COP(S)(=O)O[C@@H]4[C@@H](COP(S)(=O)O[C@@H]2[C@@H]3F)O[C@H]([C@H]4F)N2C=NC3=C2N=CN=C3N)C(=O)N1 YSUIQYOGTINQIN-UZFYAQMZSA-N 0.000 description 2
- TVTJUIAKQFIXCE-HUKYDQBMSA-N 2-amino-9-[(2R,3S,4S,5R)-4-fluoro-3-hydroxy-5-(hydroxymethyl)oxolan-2-yl]-7-prop-2-ynyl-1H-purine-6,8-dione Chemical compound NC=1NC(C=2N(C(N(C=2N=1)[C@@H]1O[C@@H]([C@H]([C@H]1O)F)CO)=O)CC#C)=O TVTJUIAKQFIXCE-HUKYDQBMSA-N 0.000 description 2
- 125000005916 2-methylpentyl group Chemical group 0.000 description 2
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- SFMJNHNUOVADRW-UHFFFAOYSA-N n-[5-[9-[4-(methanesulfonamido)phenyl]-2-oxobenzo[h][1,6]naphthyridin-1-yl]-2-methylphenyl]prop-2-enamide Chemical compound C1=C(NC(=O)C=C)C(C)=CC=C1N1C(=O)C=CC2=C1C1=CC(C=3C=CC(NS(C)(=O)=O)=CC=3)=CC=C1N=C2 SFMJNHNUOVADRW-UHFFFAOYSA-N 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000003136 n-heptyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001280 n-hexyl group Chemical group C(CCCCC)* 0.000 description 1
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- 239000007773 negative electrode material Substances 0.000 description 1
- 125000001971 neopentyl group Chemical group [H]C([*])([H])C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 125000002560 nitrile group Chemical group 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 125000002971 oxazolyl group Chemical group 0.000 description 1
- MPQXHAGKBWFSNV-UHFFFAOYSA-N oxidophosphanium Chemical group [PH3]=O MPQXHAGKBWFSNV-UHFFFAOYSA-N 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 229960003540 oxyquinoline Drugs 0.000 description 1
- 150000002964 pentacenes Chemical class 0.000 description 1
- 125000003538 pentan-3-yl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- FVDOBFPYBSDRKH-UHFFFAOYSA-N perylene-3,4,9,10-tetracarboxylic acid Chemical compound C=12C3=CC=C(C(O)=O)C2=C(C(O)=O)C=CC=1C1=CC=C(C(O)=O)C2=C1C3=CC=C2C(=O)O FVDOBFPYBSDRKH-UHFFFAOYSA-N 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 150000002987 phenanthrenes Chemical class 0.000 description 1
- 125000005561 phenanthryl group Chemical group 0.000 description 1
- 125000001484 phenothiazinyl group Chemical group C1(=CC=CC=2SC3=CC=CC=C3NC12)* 0.000 description 1
- XPPWLXNXHSNMKC-UHFFFAOYSA-N phenylboron Chemical group [B]C1=CC=CC=C1 XPPWLXNXHSNMKC-UHFFFAOYSA-N 0.000 description 1
- 125000004592 phthalazinyl group Chemical group C1(=NN=CC2=CC=CC=C12)* 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 150000004032 porphyrins Chemical class 0.000 description 1
- 239000007774 positive electrode material Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- LVTJOONKWUXEFR-FZRMHRINSA-N protoneodioscin Natural products O(C[C@@H](CC[C@]1(O)[C@H](C)[C@@H]2[C@]3(C)[C@H]([C@H]4[C@@H]([C@]5(C)C(=CC4)C[C@@H](O[C@@H]4[C@H](O[C@H]6[C@@H](O)[C@@H](O)[C@@H](O)[C@H](C)O6)[C@@H](O)[C@H](O[C@H]6[C@@H](O)[C@@H](O)[C@@H](O)[C@H](C)O6)[C@H](CO)O4)CC5)CC3)C[C@@H]2O1)C)[C@H]1[C@H](O)[C@H](O)[C@H](O)[C@@H](CO)O1 LVTJOONKWUXEFR-FZRMHRINSA-N 0.000 description 1
- 125000003373 pyrazinyl group Chemical group 0.000 description 1
- 150000003220 pyrenes Chemical class 0.000 description 1
- PBMFSQRYOILNGV-UHFFFAOYSA-N pyridazine Chemical group C1=CC=NN=C1 PBMFSQRYOILNGV-UHFFFAOYSA-N 0.000 description 1
- 125000004076 pyridyl group Chemical group 0.000 description 1
- 229940083082 pyrimidine derivative acting on arteriolar smooth muscle Drugs 0.000 description 1
- 150000003230 pyrimidines Chemical class 0.000 description 1
- 125000000714 pyrimidinyl group Chemical group 0.000 description 1
- 125000000168 pyrrolyl group Chemical group 0.000 description 1
- 125000002294 quinazolinyl group Chemical group N1=C(N=CC2=CC=CC=C12)* 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 description 1
- 125000001567 quinoxalinyl group Chemical group N1=C(C=NC2=CC=CC=C12)* 0.000 description 1
- 238000006894 reductive elimination reaction Methods 0.000 description 1
- 238000007363 ring formation reaction Methods 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 125000003548 sec-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 150000003413 spiro compounds Chemical class 0.000 description 1
- 125000003003 spiro group Chemical group 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 125000003011 styrenyl group Chemical group [H]\C(*)=C(/[H])C1=C([H])C([H])=C([H])C([H])=C1[H] 0.000 description 1
- 125000005504 styryl group Chemical group 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- JLBRGNFGBDNNSF-UHFFFAOYSA-N tert-butyl(dimethyl)borane Chemical group CB(C)C(C)(C)C JLBRGNFGBDNNSF-UHFFFAOYSA-N 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- IBBLKSWSCDAPIF-UHFFFAOYSA-N thiopyran Chemical compound S1C=CC=C=C1 IBBLKSWSCDAPIF-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- KWQNQSDKCINQQP-UHFFFAOYSA-K tri(quinolin-8-yloxy)gallane Chemical compound C1=CN=C2C(O[Ga](OC=3C4=NC=CC=C4C=CC=3)OC=3C4=NC=CC=C4C=CC=3)=CC=CC2=C1 KWQNQSDKCINQQP-UHFFFAOYSA-K 0.000 description 1
- LALRXNPLTWZJIJ-UHFFFAOYSA-N triethylborane Chemical group CCB(CC)CC LALRXNPLTWZJIJ-UHFFFAOYSA-N 0.000 description 1
- WXRGABKACDFXMG-UHFFFAOYSA-N trimethylborane Chemical group CB(C)C WXRGABKACDFXMG-UHFFFAOYSA-N 0.000 description 1
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- MXSVLWZRHLXFKH-UHFFFAOYSA-N triphenylborane Chemical group C1=CC=CC=C1B(C=1C=CC=CC=1)C1=CC=CC=C1 MXSVLWZRHLXFKH-UHFFFAOYSA-N 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- HTPBWAPZAJWXKY-UHFFFAOYSA-L zinc;quinolin-8-olate Chemical compound [Zn+2].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 HTPBWAPZAJWXKY-UHFFFAOYSA-L 0.000 description 1
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Abstract
본 발명은 신규한 헤테로 고리 화합물 및 이를 이용한 유기발광 소자를 제공한다. The present invention provides a novel heterocyclic compound and an organic light emitting device using the same.
Description
본 발명은 헤테로 고리 화합물 및 이를 포함하는 유기 발광 소자에 관한 것이다. The present invention relates to a heterocyclic compound and an organic light emitting device comprising the same.
일반적으로 유기 발광 현상이란 유기 물질을 이용하여 전기에너지를 빛에너지로 전환시켜주는 현상을 말한다. 유기 발광 현상을 이용하는 유기 발광 소자는 넓은 시야각, 우수한 콘트라스트, 빠른 응답 시간을 가지며, 휘도, 구동 전압 및 응답 속도 특성이 우수하여 많은 연구가 진행되고 있다. In general, the organic light emission phenomenon refers to a phenomenon in which electrical energy is converted into light energy using an organic material. An organic light-emitting device using the organic light-emitting phenomenon has a wide viewing angle, excellent contrast, and fast response time, and has excellent luminance, driving voltage, and response speed characteristics, and thus many studies are being conducted.
유기 발광 소자는 일반적으로 양극과 음극 및 상기 양극과 음극 사이에 유기물 층을 포함하는 구조를 가진다. 상기 유기물 층은 유기 발광 소자의 효율과 안정성을 높이기 위하여 각기 다른 물질로 구성된 다층의 구조로 이루어진 경우가 많으며, 예컨대 정공주입층, 정공수송층, 발광층, 전자수송층, 전자주입층 등으로 이루어질 수 있다. 이러한 유기 발광 소자의 구조에서 두 전극 사이에 전압을 걸어주게 되면 양극에서는 정공이, 음극에서는 전자가 유기물층에 주입되게 되고, 주입된 정공과 전자가 만났을 때 엑시톤(exciton)이 형성되며, 이 엑시톤이 다시 바닥상태로 떨어질 때 빛이 나게 된다. An organic light-emitting device generally has a structure including an anode and a cathode, and an organic material layer between the anode and the cathode. The organic material layer is often made of a multi-layered structure composed of different materials in order to increase the efficiency and stability of the organic light emitting device.For example, it may be formed of a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer, and the like. In the structure of such an organic light-emitting device, when a voltage is applied between the two electrodes, holes are injected from the anode and electrons from the cathode are injected into the organic material layer, and excitons are formed when the injected holes and electrons meet. It glows when it falls back to the ground.
상기와 같은 유기 발광 소자에 사용되는 유기물에 대하여 새로운 재료의 개발이 지속적으로 요구되고 있다.Development of new materials for organic materials used in organic light emitting devices as described above is continuously required.
본 발명은 헤테로고리 화합물 화합물 및 이를 포함하는 유기 발광 소자에 관한 것이다. The present invention relates to a heterocyclic compound compound and an organic light-emitting device comprising the same.
본 발명의 일 구현예에서는, 하기 화학식 1로 표시되는 화합물을 제공한다:In one embodiment of the present invention, a compound represented by the following formula (1) is provided:
하기 화학식 1로 표시되는 화합물:Compound represented by the following formula (1):
[화학식 1][Formula 1]
상기 화학식 1에서, In Formula 1,
R1 및 R2는, 각각 독립적으로 치환 또는 비치환된 C1-60 알킬; 또는, 치환 또는 비치환된 C6-60 아릴기이거나, 또는 서로 결합하여 C6-60 방향족 고리를 형성하고,R 1 and R 2, C 1 each independently represent a substituted or unsubstituted - 60 alkyl; Or, a substituted or unsubstituted C 6 - 60 aryl group, or is bonded to each other to form a C 6-60 aromatic ring,
Y1은, 수소; 치환 또는 비치환된 C6-60 아릴기; 또는, 치환 또는 비치환된 N, O 및 S로 구성되는 군으로부터 선택되는 헤테로원자를 1개 이상 포함하는 C2-60 헤테로고리기이며,Y 1 is hydrogen; A substituted or unsubstituted C 6-60 aryl group; Or, it is a C 2-60 heterocyclic group containing at least one heteroatom selected from the group consisting of substituted or unsubstituted N, O and S,
Y2는, 하기 화학식 2 또는 3으로 표시되고, Y 2 is represented by the following
[화학식 2][Formula 2]
[화학식 3][Chemical Formula 3]
상기 화학식 2 및 3에서, In
L1은 결합; 치환 또는 비치환된 C6-60 아릴렌; 또는 치환 또는 비치환된 O, N, Si 및 S 중 1개 이상을 포함하는 C2-60 헤테로아릴렌기이고,L 1 is a bond; Substituted or unsubstituted C 6-60 arylene; Or a substituted or unsubstituted C 2-60 heteroarylene group including at least one of O, N, Si and S,
Ar1 내지 Ar4는 각각 독립적으로, 치환 또는 비치환된 C6-60 아릴; 또는 치환 또는 비치환된 O, N, Si 및 S 중 1개 이상을 포함하는 C2-60 헤테로아릴기이며,Ar 1 to Ar 4 are each independently substituted or unsubstituted C 6-60 aryl; Or a substituted or unsubstituted C 2-60 heteroaryl group including at least one of O, N, Si and S,
X1 내지 X3는 각각 독립적으로 N 또는 CH이되, X1 내지 X3 중 적어도 하나는 N 이다.X 1 to X 3 are each independently N or CH, but at least one of X 1 to X 3 is N.
또한, 본 발명의 다른 일 구현예에서는, 제1 전극; 상기 제1 전극과 대향하여 구비된 제2 전극; 및 상기 제1 전극과 상기 제2 전극 사이에 구비된 1층 이상의 유기물 층을 포함하는 유기 발광 소자이되, 상기 유기물층 중 1층 이상이 상기 화학식 1로 표시되는 화합물을 포함하는 유기 발광 소자를 제공한다.In addition, in another embodiment of the present invention, the first electrode; A second electrode provided to face the first electrode; And an organic light-emitting device comprising at least one organic material layer provided between the first electrode and the second electrode, wherein at least one of the organic material layers comprises a compound represented by
상기 화학식 1로 표시되는 화합물은, 본 발명의 일 구현예에 따라, 유기 발광 소자의 유기물 층의 재료로 사용될 수 있으며, 유기 발광 소자에서 효율의 향상, 낮은 구동전압 및/또는 수명 특성을 향상시킬 수 있다. The compound represented by Formula 1 may be used as a material for an organic material layer of an organic light-emitting device, according to an embodiment of the present invention, and improve efficiency, low driving voltage, and/or lifetime characteristics in the organic light-emitting device. I can.
특히, 상기 화학식 1로 표시되는 화합물은, 본 발명의 다른 일 구현예에서, 정공주입층, 정공수송층, 전자억제층, 전자주입층, 전자수송층, 정공억제층, 또는 녹색발광층의 재료로 사용될 수 있다.In particular, the compound represented by Formula 1 may be used as a material for a hole injection layer, a hole transport layer, an electron suppression layer, an electron injection layer, an electron transport layer, a hole suppression layer, or a green light emitting layer in another embodiment of the present invention. have.
도 1은, 기판(1), 양극(2), 발광층(3), 및 음극(4)을 포함하는 유기 발광 소자의 예를 도시한 것이다.
도 2는, 기판 (1), 양극(2), 정공주입층(5), 정공수송층(6), 발광층(3), 전자수송층(7), 및 음극(4)을 포함하는 유기 발광 소자의 예를 도시한 것이다.1 shows an example of an organic light-emitting device including a
FIG. 2 shows an organic light emitting device including a
본 발명의 구현예들의 이점 및 특징, 그리고 그것들을 달성하는 방법은, 상세하게 후술되어 있는 실시예들을 참조하면 명확해질 것이다. 그러나, 본 발명은 이하에서 개시되는 실시예들에 한정되는 것이 아니라 서로 다른 다양한 형태로 구현될 수 있으며, 단지 본 실시예들은 본 발명의 개시가 완전하도록 하고, 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에게 발명의 범주를 완전하게 알려주기 위해 제공되는 것이며, 본 발명은 청구항의 범주에 의해 정의될 뿐이다. Advantages and features of the embodiments of the present invention, and a method of achieving them will become apparent with reference to the embodiments described below in detail. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in a variety of different forms, only the present embodiments are intended to complete the disclosure of the present invention, and are common in the technical field to which the present invention pertains. It is provided to fully inform those skilled in the art of the scope of the invention, and the invention is only defined by the scope of the claims.
이하에서는, 본 발명의 구현예들에 대한 상세한 설명에 앞서, 본 명세서에서 통용되는 표현, 용어 등을 정의한다.Hereinafter, before a detailed description of embodiments of the present invention, expressions, terms, and the like commonly used in the present specification are defined.
이하, 본 발명의 이해를 돕기 위하여 보다 상세히 설명한다.Hereinafter, it will be described in more detail to aid the understanding of the present invention.
본 명세서에서, 및 는 각각, 다른 치환기에 연결되는 결합을 의미한다. In this specification, And Each means a bond connected to another substituent.
본 명세서에서 "치환 또는 비치환된" 이라는 용어는 중수소; 할로겐기; 니트릴기; 니트로기; 히드록시기; 카보닐기; 에스테르기; 이미드기; 아미노기; 포스핀옥사이드기; 알콕시기; 아릴옥시기; 알킬티옥시기; 아릴티옥시기; 알킬술폭시기; 아릴술폭시기; 실릴기; 붕소기; 알킬기; 사이클로알킬기; 알케닐기; 아릴기; 아르알킬기; 아르알케닐기; 알킬아릴기; 알킬아민기; 아랄킬아민기; 헤테로아릴아민기; 아릴아민기; 아릴포스핀기; 또는 N, O 및 S 원자 중 1개 이상을 포함하는 헤테로고리기로 이루어진 군에서 선택된 1개 이상의 치환기로 치환 또는 비치환되거나, 상기 예시된 치환기 중 2 이상의 치환기가 연결된 치환 또는 비치환된 것을 의미한다. 예컨대, "2 이상의 치환기가 연결된 치환기"는 비페닐기일 수 있다. 즉, 비페닐기는 아릴기일 수도 있고, 2개의 페닐기가 연결된 치환기로 해석될 수 있다.In the present specification, the term "substituted or unsubstituted" refers to deuterium; Halogen group; Nitrile group; Nitro group; Hydroxy group; Carbonyl group; Ester group; Imide group; Amino group; Phosphine oxide group; Alkoxy group; Aryloxy group; Alkyl thioxy group; Arylthioxy group; Alkyl sulfoxy group; Arylsulfoxy group; Silyl group; Boron group; Alkyl group; Cycloalkyl group; Alkenyl group; Aryl group; Aralkyl group; Aralkenyl group; Alkylaryl group; Alkylamine group; Aralkylamine group; Heteroarylamine group; Arylamine group; Arylphosphine group; Or it means substituted or unsubstituted with one or more substituents selected from the group consisting of a heterocyclic group containing one or more of N, O, and S atoms, or substituted or unsubstituted with two or more substituents connected among the aforementioned substituents. . For example, "a substituent to which two or more substituents are connected" may be a biphenyl group. That is, the biphenyl group may be an aryl group, or may be interpreted as a substituent to which two phenyl groups are connected.
본 명세서에서 카보닐기의 탄소수는 특별히 한정되지 않으나, 탄소수 1 내지 40인 것이 바람직하다. 구체적으로 하기와 같은 구조의 화합물이 될 수 있으나, 이에 한정되는 것은 아니다.In the present specification, the number of carbon atoms of the carbonyl group is not particularly limited, but it is preferably 1 to 40 carbon atoms. Specifically, it may be a compound having the following structure, but is not limited thereto.
본 명세서에 있어서, 에스테르기는 에스테르기의 산소가 탄소수 1 내지 25의 직쇄, 분지쇄 또는 고리쇄 알킬기 또는 탄소수 6 내지 25의 아릴기로 치환될 수 있다. 구체적으로, 하기 구조식의 화합물이 될 수 있으나, 이에 한정되는 것은 아니다.In the present specification, the ester group may be substituted with an oxygen of the ester group with a
본 명세서에 있어서, 이미드기의 탄소수는 특별히 한정되지 않으나, 탄소수 1 내지 25인 것이 바람직하다. 구체적으로 하기와 같은 구조의 화합물이 될 수 있으나, 이에 한정되는 것은 아니다.In the present specification, the number of carbon atoms of the imide group is not particularly limited, but it is preferably 1 to 25 carbon atoms. Specifically, it may be a compound having the following structure, but is not limited thereto.
본 명세서에 있어서, 실릴기는 구체적으로 트리메틸실릴기, 트리에틸실릴기, t-부틸디메틸실릴기, 비닐디메틸실릴기, 프로필디메틸실릴기, 트리페닐실릴기, 디페닐실릴기, 페닐실릴기 등이 있으나 이에 한정되지 않는다. In the present specification, the silyl group is specifically trimethylsilyl group, triethylsilyl group, t-butyldimethylsilyl group, vinyldimethylsilyl group, propyldimethylsilyl group, triphenylsilyl group, diphenylsilyl group, phenylsilyl group, etc. However, it is not limited thereto.
본 명세서에 있어서, 붕소기는 구체적으로 트리메틸붕소기, 트리에틸붕소기, t-부틸디메틸붕소기, 트리페닐붕소기, 페닐붕소기 등이 있으나 이에 한정되지 않는다.In the present specification, the boron group specifically includes a trimethyl boron group, a triethyl boron group, a t-butyldimethyl boron group, a triphenyl boron group, and a phenyl boron group, but is not limited thereto.
본 명세서에 있어서, 할로겐기의 예로는 불소, 염소, 브롬 또는 요오드가 있다.In the present specification, examples of the halogen group include fluorine, chlorine, bromine or iodine.
본 명세서에 있어서, 상기 알킬기는 직쇄 또는 분지쇄일 수 있고, 탄소수는 특별히 한정되지 않으나 1 내지 40인 것이 바람직하다. 일 실시상태에 따르면, 상기 알킬기의 탄소수는 1 내지 20이다. 또 하나의 실시상태에 따르면, 상기 알킬기의 탄소수는 1 내지 10이다. 또 하나의 실시상태에 따르면, 상기 알킬기의 탄소수는 1 내지 6이다. 알킬기의 구체적인 예로는 메틸, 에틸, 프로필, n-프로필, 이소프로필, 부틸, n-부틸, 이소부틸, tert-부틸, sec-부틸, 1-메틸-부틸, 1-에틸-부틸, 펜틸, n-펜틸, 이소펜틸, 네오펜틸, tert-펜틸, 헥실, n-헥실, 1-메틸펜틸, 2-메틸펜틸, 4-메틸-2-펜틸, 3,3-디메틸부틸, 2-에틸부틸, 헵틸, n-헵틸, 1-메틸헥실, 사이클로펜틸메틸,사이클로헥틸메틸, 옥틸, n-옥틸, tert-옥틸, 1-메틸헵틸, 2-에틸헥실, 2-프로필펜틸, n-노닐, 2,2-디메틸헵틸, 1-에틸-프로필, 1,1-디메틸-프로필, 이소헥실, 2-메틸펜틸, 4-메틸헥실, 5-메틸헥실 등이 있으나, 이들에 한정되지 않는다.In the present specification, the alkyl group may be a linear or branched chain, and the number of carbon atoms is not particularly limited, but is preferably 1 to 40. According to an exemplary embodiment, the alkyl group has 1 to 20 carbon atoms. According to another exemplary embodiment, the alkyl group has 1 to 10 carbon atoms. According to another exemplary embodiment, the alkyl group has 1 to 6 carbon atoms. Specific examples of the alkyl group include methyl, ethyl, propyl, n-propyl, isopropyl, butyl, n-butyl, isobutyl, tert-butyl, sec-butyl, 1-methyl-butyl, 1-ethyl-butyl, pentyl, n -Pentyl, isopentyl, neopentyl, tert-pentyl, hexyl, n-hexyl, 1-methylpentyl, 2-methylpentyl, 4-methyl-2-pentyl, 3,3-dimethylbutyl, 2-ethylbutyl, heptyl , n-heptyl, 1-methylhexyl, cyclopentylmethyl, cycloheptylmethyl, octyl, n-octyl, tert-octyl, 1-methylheptyl, 2-ethylhexyl, 2-propylpentyl, n-nonyl, 2,2 -Dimethylheptyl, 1-ethyl-propyl, 1,1-dimethyl-propyl, isohexyl, 2-methylpentyl, 4-methylhexyl, 5-methylhexyl, and the like, but are not limited thereto.
본 명세서에 있어서, 상기 알케닐기는 직쇄 또는 분지쇄일 수 있고, 탄소수는 특별히 한정되지 않으나, 2 내지 40인 것이 바람직하다. 일 실시상태에 따르면, 상기 알케닐기의 탄소수는 2 내지 20이다. 또 하나의 실시상태에 따르면, 상기 알케닐기의 탄소수는 2 내지 10이다. 또 하나의 실시상태에 따르면, 상기 알케닐기의 탄소수는 2 내지 6이다. 구체적인 예로는 비닐, 1-프로페닐, 이소프로페닐, 1-부테닐, 2-부테닐, 3-부테닐, 1-펜테닐, 2-펜테닐, 3-펜테닐, 3-메틸-1-부테닐, 1,3-부타디에닐, 알릴, 1-페닐비닐-1-일, 2-페닐비닐-1-일, 2,2-디페닐비닐-1-일, 2-페닐-2-(나프틸-1-일)비닐-1-일, 2,2-비스(디페닐-1-일)비닐-1-일, 스틸베닐기, 스티레닐기 등이 있으나 이들에 한정되지 않는다.In the present specification, the alkenyl group may be a linear or branched chain, and the number of carbon atoms is not particularly limited, but is preferably 2 to 40. According to an exemplary embodiment, the alkenyl group has 2 to 20 carbon atoms. According to another exemplary embodiment, the alkenyl group has 2 to 10 carbon atoms. According to another exemplary embodiment, the alkenyl group has 2 to 6 carbon atoms. Specific examples include vinyl, 1-propenyl, isopropenyl, 1-butenyl, 2-butenyl, 3-butenyl, 1-pentenyl, 2-pentenyl, 3-pentenyl, 3-methyl-1- Butenyl, 1,3-butadienyl, allyl, 1-phenylvinyl-1-yl, 2-phenylvinyl-1-yl, 2,2-diphenylvinyl-1-yl, 2-phenyl-2-( Naphthyl-1-yl)vinyl-1-yl, 2,2-bis(diphenyl-1-yl)vinyl-1-yl, stilbenyl group, styrenyl group, and the like, but are not limited thereto.
본 명세서에 있어서, 사이클로알킬기는 특별히 한정되지 않으나, 탄소수 3 내지 60인 것이 바람직하며, 일 실시상태에 따르면, 상기 사이클로알킬기의 탄소수는 3 내지 30이다. 또 하나의 실시상태에 따르면, 상기 사이클로알킬기의 탄소수는 3 내지 20이다. 또 하나의 실시상태에 따르면, 상기 사이클로알킬기의 탄소수는 3 내지 6이다. 구체적으로 사이클로프로필, 사이클로부틸, 사이클로펜틸, 3-메틸사이클로펜틸, 2,3-디메틸사이클로펜틸, 사이클로헥실, 3-메틸사이클로헥실, 4-메틸사이클로헥실, 2,3-디메틸사이클로헥실, 3,4,5-트리메틸사이클로헥실, 4-tert-부틸사이클로헥실, 사이클로헵틸, 사이클로옥틸 등이 있으나, 이에 한정되지 않는다.In the present specification, the cycloalkyl group is not particularly limited, but is preferably 3 to 60 carbon atoms, and according to an exemplary embodiment, the cycloalkyl group has 3 to 30 carbon atoms. According to another exemplary embodiment, the cycloalkyl group has 3 to 20 carbon atoms. According to another exemplary embodiment, the cycloalkyl group has 3 to 6 carbon atoms. Specifically, cyclopropyl, cyclobutyl, cyclopentyl, 3-methylcyclopentyl, 2,3-dimethylcyclopentyl, cyclohexyl, 3-methylcyclohexyl, 4-methylcyclohexyl, 2,3-dimethylcyclohexyl, 3, 4,5-trimethylcyclohexyl, 4-tert-butylcyclohexyl, cycloheptyl, cyclooctyl, and the like, but are not limited thereto.
본 명세서에 있어서, 아릴기는 특별히 한정되지 않으나 탄소수 6 내지 60인 것이 바람직하며, 단환식 아릴기 또는 다환식 아릴기일 수 있다. 일 실시상태에 따르면, 상기 아릴기의 탄소수는 6 내지 30이다. 일 실시상태에 따르면, 상기 아릴기의 탄소수는 6 내지 20이다. 상기 아릴기가 단환식 아릴기로는 페닐기, 바이페닐기, 터페닐기 등이 될 수 있으나, 이에 한정되는 것은 아니다. 상기 다환식 아릴기로는 나프틸기, 안트라세닐기, 페난트릴기, 파이레닐기, 페릴레닐기, 크라이세닐기, 플루오레닐기 등이 될 수 있으나, 이에 한정되는 것은 아니다.In the present specification, the aryl group is not particularly limited, but is preferably 6 to 60 carbon atoms, and may be a monocyclic aryl group or a polycyclic aryl group. According to an exemplary embodiment, the number of carbon atoms in the aryl group is 6 to 30. According to an exemplary embodiment, the aryl group has 6 to 20 carbon atoms. The aryl group may be a phenyl group, a biphenyl group, or a terphenyl group, but the monocyclic aryl group is not limited thereto. The polycyclic aryl group may be a naphthyl group, an anthracenyl group, a phenanthryl group, a pyrenyl group, a perylenyl group, a chrysenyl group, a fluorenyl group, and the like, but is not limited thereto.
본 명세서에 있어서, 플루오레닐기는 치환될 수 있고, 치환기 2개가 서로 결합하여 스피로 구조를 형성할 수 있다. 상기 플루오레닐기가 치환되는 경우, 등이 될 수 있다. 다만, 이에 한정되는 것은 아니다.In the present specification, the fluorenyl group may be substituted, and two substituents may be bonded to each other to form a spiro structure. When the fluorenyl group is substituted, Etc. However, it is not limited thereto.
본 명세서에 있어서, 헤테로고리기는 이종 원소로 O, N, Si 및 S 중 1개 이상을 포함하는 헤테로고리기로서, 탄소수는 특별히 한정되지 않으나, 탄소수 2 내지 60인 것이 바람직하다. 헤테로고리기의 예로는 티오펜기, 퓨란기, 피롤기, 이미다졸기, 티아졸기, 옥사졸기, 옥사디아졸기, 트리아졸기, 피리딜기, 비피리딜기, 피리미딜기, 트리아진기, 아크리딜기, 피리다진기, 피라지닐기, 퀴놀리닐기, 퀴나졸린기, 퀴녹살리닐기, 프탈라지닐기, 피리도 피리미디닐기, 피리도 피라지닐기, 피라지노 피라지닐기, 이소퀴놀린기, 인돌기, 카바졸기, 벤조옥사졸기, 벤조이미다졸기, 벤조티아졸기, 벤조카바졸기, 벤조티오펜기, 디벤조티오펜기, 벤조퓨라닐기, 페난쓰롤린기(phenanthroline), 이소옥사졸릴기, 티아디아졸릴기, 페노티아지닐기 및 디벤조퓨라닐기 등이 있으나, 이들에만 한정되는 것은 아니다.In the present specification, the heterocyclic group is a heterocyclic group containing at least one of O, N, Si and S as a heterogeneous element, and the number of carbon atoms is not particularly limited, but it is preferably 2 to 60 carbon atoms. Examples of heterocyclic groups include thiophene group, furan group, pyrrole group, imidazole group, thiazole group, oxazole group, oxadiazole group, triazole group, pyridyl group, bipyridyl group, pyrimidyl group, triazine group, acridyl group , Pyridazine group, pyrazinyl group, quinolinyl group, quinazoline group, quinoxalinyl group, phthalazinyl group, pyrido pyrimidinyl group, pyrido pyrazinyl group, pyrazino pyrazinyl group, isoquinoline group, indole group , Carbazole group, benzoxazole group, benzoimidazole group, benzothiazole group, benzocarbazole group, benzothiophene group, dibenzothiophene group, benzofuranyl group, phenanthroline group, isoxazolyl group, thiiadia There are a zolyl group, a phenothiazinyl group, and a dibenzofuranyl group, but are not limited thereto.
본 명세서에 있어서, 아르알킬기, 아르알케닐기, 알킬아릴기, 아릴아민기 중의 아릴기는 전술한 아릴기의 예시와 같다. 본 명세서에 있어서, 아르알킬기, 알킬아릴기, 알킬아민기 중 알킬기는 전술한 알킬기의 예시와 같다. 본 명세서에 있어서, 헤테로아릴아민 중 헤테로아릴은 전술한 헤테로고리기에 관한 설명이 적용될 수 있다. 본 명세서에 있어서, 아르알케닐기 중 알케닐기는 전술한 알케닐기의 예시와 같다. 본 명세서에 있어서, 아릴렌은 2가기인 것을 제외하고는 전술한 아릴기에 관한 설명이 적용될 수 있다. 본 명세서에 있어서, 헤테로아릴렌은 2가기인 것을 제외하고는 전술한 헤테로고리기에 관한 설명이 적용될 수 있다. 본 명세서에 있어서, 탄화수소 고리는 1가기가 아니고, 2개의 치환기가 결합하여 형성한 것을 제외하고는 전술한 아릴기 또는 사이클로알킬기에 관한 설명이 적용될 수 있다. 본 명세서에 있어서, 헤테로고리는 1가기가 아니고, 2개의 치환기가 결합하여 형성한 것을 제외하고는 전술한 헤테로고리기에 관한 설명이 적용될 수 있다.In the present specification, the aryl group among the aralkyl group, aralkenyl group, alkylaryl group, and arylamine group is the same as the example of the aryl group described above. In the present specification, the alkyl group among the aralkyl group, the alkylaryl group and the alkylamine group is the same as the example of the aforementioned alkyl group. In the present specification, for heteroaryl among heteroarylamines, the above description of the heterocyclic group may be applied. In the present specification, the alkenyl group of the aralkenyl group is the same as the example of the alkenyl group described above. In the present specification, the description of the aryl group described above may be applied except that the arylene is a divalent group. In the present specification, the description of the aforementioned heterocyclic group may be applied except that the heteroarylene is a divalent group. In the present specification, the hydrocarbon ring is not a monovalent group, and the description of the aryl group or the cycloalkyl group described above may be applied except that the hydrocarbon ring is formed by bonding of two substituents. In the present specification, the heterocycle is not a monovalent group, and the description of the aforementioned heterocyclic group may be applied except that the heterocycle is formed by bonding of two substituents.
화학식 1로 표시되는 화합물Compound represented by
이하, 본 발명의 일 구현예에서 제공하는, 하기 화학식 1로 표시되는 화합물을 상세히 설명한다. 단, 이하에서 상세히 설명되지 않은 치환기 등의 정의는, 전술한 내용을 참고하면 명확히 이해될 것이다:Hereinafter, a compound represented by the following
[화학식 1][Formula 1]
상기 화학식 1에서, In
R1 및 R2는, 각각 독립적으로 치환 또는 비치환된 C1-60 알킬; 또는, 치환 또는 비치환된 C6-60 아릴기이거나, 또는 서로 결합하여 C6-60 방향족 고리를 형성하고,R 1 and R 2, C 1 each independently represent a substituted or unsubstituted - 60 alkyl; Or, a substituted or unsubstituted C 6 - 60 aryl group, or is bonded to each other to form a C 6-60 aromatic ring,
Y1은, 수소; 치환 또는 비치환된 C6-60 아릴기; 또는, 치환 또는 비치환된 N, O 및 S로 구성되는 군으로부터 선택되는 헤테로원자를 1개 이상 포함하는 C2-60 헤테로고리기이며,Y 1 is hydrogen; A substituted or unsubstituted C 6-60 aryl group; Or, it is a C 2-60 heterocyclic group containing at least one heteroatom selected from the group consisting of substituted or unsubstituted N, O and S,
Y2는, 하기 화학식 2 또는 3으로 표시되고, Y 2 is represented by the following
[화학식 2][Formula 2]
[화학식 3][Chemical Formula 3]
상기 화학식 2 및 3에서, In
L1은 결합; 치환 또는 비치환된 C6-60 아릴렌; 또는 치환 또는 비치환된 O, N, Si 및 S 중 1개 이상을 포함하는 C2-60 헤테로아릴렌기이고,L 1 is a bond; Substituted or unsubstituted C 6-60 arylene; Or a substituted or unsubstituted C 2-60 heteroarylene group including at least one of O, N, Si and S,
Ar1 내지 Ar4는 각각 독립적으로, 치환 또는 비치환된 C6-60 아릴; 또는 치환 또는 비치환된 O, N, Si 및 S 중 1개 이상을 포함하는 C2-60 헤테로아릴기이며,Ar 1 to Ar 4 are each independently substituted or unsubstituted C 6-60 aryl; Or a substituted or unsubstituted C 2-60 heteroaryl group including at least one of O, N, Si and S,
X1 내지 X3는 각각 독립적으로 N 또는 CH이되, X1 내지 X3 중 적어도 하나는 N 이다.X 1 to X 3 are each independently N or CH, but at least one of X 1 to X 3 is N.
상기 화학식 1로 표시되는 화합물은, 사이클로펜타페난트렌(cyclopentaphenanthrene)을 포함하며, 그 중심 벤젠고리에 서로 다른 두 개의 치환기(Y1 및 Y2)가 결합된 것이다. The compound represented by
비치환된 사이클로펜타페난트렌에서, 중심 벤젠고리에 이웃하는 벤젠고리는, 탄소-탄소길이 및 그에 따른 반응성이, 일반적으로 알려진 벤젠과 거의 동일하다. In the unsubstituted cyclopentaphenanthrene, the benzene ring adjacent to the central benzene ring has a carbon-carbon length and thus reactivity almost the same as the generally known benzene.
그런데, 비치환된 사이클로펜타페난트렌에서, 중심 벤젠고리의 경우, 일반적으로 알려진 벤젠에 비하여 탄소-탄소길이가 길고, 그에 따라 반응성도 상대적으로 큰 것으로 추론된다. However, in the unsubstituted cyclopentaphenanthrene, in the case of the central benzene ring, it is inferred that the carbon-carbon length is longer than that of commonly known benzene, and thus the reactivity is relatively large.
이와 관련하여, 비치환된 사이클로펜타페난트렌은, 유기 발광 소자의 유기물 층에 적용될 경우, 그 중심 벤젠고리가 라디칼, 다른 화합물 등에 의하여 공격 받아 변성되고, 유기 발광 소자의 성능 저하를 야기할 수 있다.In this regard, when unsubstituted cyclopentaphenanthrene is applied to an organic material layer of an organic light-emitting device, its central benzene ring is attacked by radicals, other compounds, etc., and is denatured, and may cause performance degradation of the organic light-emitting device. .
그에 반면, 상기 화학식 1로 표시되는 화합물은, 반응성이 상대적으로 큰 중심 벤젠고리에 서로 다른 두 개의 치환기(Y1 및 Y2)가 결합되어, 비치환된 사이클로펜타페난트렌에 비하여 전기화학적 안정성과 내구성이 향상된 것일 수 있다. 특히, 상기 화학식 1로 표시되는 화합물이 유기 발광 소자의 유기물 층에 적용될 경우, 라디칼, 다른 화합물 등에 의한 공격이 억제될 수 있어, 소자의 안정적 구동에 기여할 수 있다.On the other hand, in the compound represented by
구체적으로, 상기 화학식 1에서, R1 및 R2는 서로 동일하거나 상이하고, 메틸; 또는 페닐기일 수 있다. Specifically, in
보다 구체적으로, R1 및 R2는 메틸; 또는 페닐기로 서로 동일하고, 페닐기인 경우 서로 독립적이거나 서로 결합되어 고리를 형성할 수 있다. 이에 따라, 상기 화학식 1은 하기 화학식 1-1 내지 1-3 중 어느 하나로 표시될 수 있다.More specifically, R 1 and R 2 are methyl; Alternatively, the phenyl group is the same as each other, and in the case of a phenyl group, they are independent of each other or may be bonded to each other to form a ring. Accordingly,
[화학식 1-1][Formula 1-1]
[화학식 1-2][Formula 1-2]
[화학식 1-3][Formula 1-3]
이하의 설명들은, 상기 화학식 1이 상기 화학식 1-1 내지 1-3 중 어느 하나로 표시되는지 여부와 무관하게 적용되는 것이다. 또한, 이하의 각 설명은 독립적이며, 본 발명의 일 구현예의 구체적인 예시를 각각 제시한 것일 뿐, 각 설명에 의해 본 발명의 일 구현예가 제한되지 않는다.The following descriptions are applied irrespective of whether
상기 화학식 2 및 3에서, Ar1 내지 Ar4는 동일하거나 상이하고, 각각 독립적으로 하기로 구성되는 군으로부터 선택되는 어느 하나일 수 있다.In
상기 화학식 2 및 3에서, L1는 결합; 페닐; 비페닐릴; 터페닐릴; 쿼터페닐릴; 나프틸; 안트라세닐; 플루오레닐; 페난쓰레닐; 파이레닐; 또는 트리페닐레닐일 수 있다. 구체적으로, L1이 결합이 아닌 경우의 구조는 다음과 같다.In
상기 화학식 1에서, Y1은 (1) 수소일 수도 있고, (2) 하기로 구성되는 군으로부터 선택되는 어느 하나일 수도 있다. 이는 선택적이며, 어느 하나로 제한되지 않는다. In
(여기서, L2 내지 L5는 각각 결합; 치환 또는 비치환된 C6-60 아릴렌; 또는 치환 또는 비치환된 O, N, Si 및 S 중 1개 이상을 포함하는 C2-60 헤테로아릴렌기이고, R3는 수소; 치환 또는 비치환된 C1-60 알킬; 또는, 치환 또는 비치환된 C2-60 아릴기이다.)(Wherein, L 2 to L 5 are each a bond; substituted or unsubstituted C 6-60 arylene; Or substituted or unsubstituted C 2-60 heteroaryl including at least one of O, N, Si and S And R 3 is hydrogen; substituted or unsubstituted C 1-60 alkyl; Or, substituted or unsubstituted C 2-60 aryl group.)
예컨대, Y1이 (1) 수소일 때, 상기 화학식 1로 표시되는 화합물은 하기로 구성되는 군으로부터 선택되는 어느 하나가 될 수 있다. For example, when Y 1 is (1) hydrogen, the compound represented by
한편, Y1이 (2) 수소가 아닐 때, 상기 화학식 1로 표시되는 화합물은 하기로 구성되는 군으로부터 선택되는 어느 하나가 될 수 있다. Meanwhile, when Y 1 is not (2) hydrogen, the compound represented by
이하, 상기 화학식 1로 표시되는 화합물의 제조 방법을 설명한다. 다만, 일반적으로 당 업계에 알려진 다른 방법을 이용하여 제조될 수도 있어, 이하의 설명에 의하여 상기 화학식 1로 표시되는 화합물의 제조 방법이 제한되는 것은 아니다. Hereinafter, a method of preparing the compound represented by
예컨대, 상기 화학식 1로 표시되는 화합물은, Y2를 제외한 나머지 기본 골격이 형성된 뒤, 그 기본 골격에 Y2가 도입되어 형성된 것일 수 있다. For example, the compound represented by
우선, Y2를 제외한 나머지 기본 골격은, 하기 반응식 1-1 내지 1-3에 따라 형성될 수 있다. 하기 반응식 1-1 내지 1-3은 각각, 상기 화학식 1-1 내지 1-3의 기본 골격을 형성하는 것이다. First, the rest of the basic skeleton except for Y 2 may be formed according to the following Schemes 1-1 to 1-3. Reaction Schemes 1-1 to 1-3 below each form the basic skeleton of Formulas 1-1 to 1-3.
[반응식 1-1][Reaction Scheme 1-1]
[반응식 1-2][Scheme 1-2]
[반응식 1-3][Scheme 1-3]
이후, 상기 반응식 1-1 내지 1-3에 따라 형성된 기본 골격에, 하기 반응식 2-1 내지 3-3에 따라 Y2가 도입될 수 있다. 구체적으로, 하기 반응식 2-1 내지 2-3에 따르면, 전술한 화학식 2가 Y2로 도입될 수 있다. 또한, 하기 반응식 3-1 내지 3-3에 따르면, 전술한 화학식 3이 Y2로 도입될 수 있다.Thereafter, in the basic skeleton formed according to Schemes 1-1 to 1-3, Y 2 may be introduced according to Schemes 2-1 to 3-3 below. Specifically, according to the following Reaction Schemes 2-1 to 2-3, the
[반응식 2-1][Scheme 2-1]
[반응식 2-2][Reaction Scheme 2-2]
[반응식 2-3][Scheme 2-3]
[반응식 3-1][Reaction Scheme 3-1]
[반응식 3-2][Reaction Scheme 3-2]
[반응식 3-3][Reaction Scheme 3-3]
보다 구체적으로, 후술되는 중간체 및 그 중간체를 사용하는 제조예에서 보다 구체화될 수 있다.More specifically, it may be more specific in the intermediate to be described later and the preparation example using the intermediate.
상기 화학식 1로 표시되는 화합물을 이용한 유기 발광 소자Organic light-emitting device using the compound represented by
이하, 본 발명의 다른 일 구현예에서 제공하는, 유기 발광 소자를 상세히 설명한다. 이는, 상기 화학식 1로 표시되는 화합물을 유기물층 중 1층 이상에 포함하는 유기 발광 소자이며, 상기 화학식 1로 표시되는 화합물을 제외한 나머지 구성, 구조 등은 당 업계에 일반적으로 알려진 것과 동일한 것을 적용한 것일 있다.Hereinafter, an organic light emitting device provided in another embodiment of the present invention will be described in detail. This is an organic light-emitting device including the compound represented by
예를 들어, 본 발명의 유기 발광 소자의 유기물 층은 단층 구조로 이루어질 수도 있으나, 2층 이상의 유기물층이 적층된 다층 구조로 이루어질 수 있다. 예컨대, 본 발명의 유기 발광 소자는 유기물 층으로서 정공주입층, 정공수송층, 발광층, 전자수송층, 전자주입층 등을 포함하는 구조를 가질 수 있다. 그러나 유기 발광 소자의 구조는 이에 한정되지 않고 더 적은 수의 유기층을 포함할 수 있다.For example, the organic material layer of the organic light emitting device of the present invention may have a single-layer structure, but may have a multilayer structure in which two or more organic material layers are stacked. For example, the organic light emitting device of the present invention may have a structure including a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer, and the like as an organic material layer. However, the structure of the organic light emitting device is not limited thereto and may include a smaller number of organic layers.
또한, 상기 유기물 층은 정공주입층, 정공수송층, 또는 정공 주입과 수송을 동시에 하는 층을 포함할 수 있고, 상기 정공주입층, 정공수송층, 또는 정공 주입과 수송을 동시에 하는 층은 상기 화학식 1로 표시되는 화합물을 포함한다. In addition, the organic material layer may include a hole injection layer, a hole transport layer, or a layer that simultaneously injects and transports holes, and the hole injection layer, a hole transport layer, or a layer that simultaneously injects and transports holes is represented by
또한, 상기 유기물 층은 발광층을 포함할 수 있고, 상기 발광층은 상기 화학식 1로 표시되는 화합물을 포함한다. In addition, the organic material layer may include an emission layer, and the emission layer includes the compound represented by
또한, 상기 유기물 층은 전자수송층, 또는 전자주입층을 포함할 수 있고, 상기 전자수송층, 또는 전자주입층은 상기 화학식 1로 표시되는 화합물을 포함한다. In addition, the organic material layer may include an electron transport layer or an electron injection layer, and the electron transport layer or the electron injection layer includes the compound represented by
또한, 상기 전자수송층, 전자주입층, 또는 전자수송 및 전자주입을 동시에 하는 층은 상기 화학식 1로 표시되는 화합물을 포함한다. In addition, the electron transport layer, the electron injection layer, or the layer that simultaneously transports electrons and injects electrons includes the compound represented by
또한, 상기 유기물 층은 발광층 및 전자수송층을 포함하고, 상기 전자수송층은 상기 화학식 1로 표시되는 화합물을 포함할 수 있다. In addition, the organic material layer may include a light emitting layer and an electron transport layer, and the electron transport layer may include a compound represented by
또한, 본 발명에 따른 유기 발광 소자는, 기판 상에 양극, 1층 이상의 유기물 층 및 음극이 순차적으로 적층된 구조(normal type)의 유기 발광 소자일 수 있다. 또한, 본 발명에 따른 유기 발광 소자는 기판 상에 음극, 1층 이상의 유기물 층 및 양극이 순차적으로 적층된 역방향 구조(inverted type)의 유기 발광 소자일 수 있다. 예컨대, 본 발명의 일실시예에 따른 유기 발광 소자의 구조는 도 1 및 2에 예시되어 있다.In addition, the organic light emitting device according to the present invention may be an organic light emitting device having a structure (normal type) in which an anode, one or more organic material layers, and a cathode are sequentially stacked on a substrate. Further, the organic light emitting device according to the present invention may be an inverted type organic light emitting device in which a cathode, one or more organic material layers, and an anode are sequentially stacked on a substrate. For example, the structure of an organic light-emitting device according to an embodiment of the present invention is illustrated in FIGS. 1 and 2.
도 1은 기판(1), 양극(2), 발광층(3), 및 음극(4)을 포함하는 유기 발광 소자의 예를 도시한 것이다. 이와 같은 구조에 있어서, 상기 화학식 1로 표시되는 화합물은 상기 발광층에 포함될 수 있다. 1 shows an example of an organic light emitting device including a
도 2는, 기판 (1), 양극(2), 정공주입층(5), 정공수송층(6), 발광층(3), 전자수송층(7), 및 음극(4)을 포함하는 유기 발광 소자의 예를 도시한 것이다. 이와 같은 구조에 있어서, 상기 화학식 1로 표시되는 화합물은 상기 정공주입층, 정공수송층, 발광층 및 전자수송층 중 1층 이상에 포함될 수 있다. 2 is a diagram of an organic light-emitting device including a
본 발명에 따른 유기 발광 소자는, 상기 유기물 층 중 1층 이상이 상기 화학식 1로 표시되는 화합물을 포함하는 것을 제외하고는 당 기술분야에 알려져 있는 재료와 방법으로 제조될 수 있다. 또한, 상기 유기 발광 소자가 복수개의 유기물층을 포함하는 경우, 상기 유기물층은 동일한 물질 또는 다른 물질로 형성될 수 있다. The organic light-emitting device according to the present invention may be manufactured by materials and methods known in the art, except that at least one of the organic material layers contains the compound represented by
예컨대, 본 발명에 따른 유기 발광 소자는 기판 상에 제1 전극, 유기물층 및 제2 전극을 순차적으로 적층시켜 제조할 수 있다. 이때, 스퍼터링법(sputtering)이나 전자빔 증발법(e-beam evaporation)과 같은 PVD(physical Vapor Deposition)방법을 이용하여, 기판 상에 금속 또는 전도성을 가지는 금속 산화물 또는 이들의 합금을 증착시켜 양극을 형성하고, 그 위에 정공 주입층, 정공수송층, 발광층 및 전자수송층을 포함하는 유기물 층을 형성한 후, 그 위에 음극으로 사용할 수 있는 물질을 증착시켜 제조할 수 있다. 이와 같은 방법 외에도, 기판 상에 음극 물질부터 유기물층, 양극 물질을 차례로 증착시켜 유기 발광 소자를 만들 수 있다. For example, the organic light-emitting device according to the present invention may be manufactured by sequentially stacking a first electrode, an organic material layer, and a second electrode on a substrate. At this time, by using a PVD (physical vapor deposition) method such as sputtering or e-beam evaporation, a metal or conductive metal oxide or alloy thereof is deposited on the substrate to form an anode. And, after forming an organic material layer including a hole injection layer, a hole transport layer, a light emitting layer and an electron transport layer thereon, it can be prepared by depositing a material that can be used as a cathode thereon. In addition to such a method, an organic light-emitting device may be manufactured by sequentially depositing a cathode material, an organic material layer, and an anode material on a substrate.
또한, 상기 화학식 1로 표시되는 화합물은 유기 발광 소자의 제조시 진공 증착법 뿐만 아니라 용액 도포법에 의하여 유기물 층으로 형성될 수 있다. 여기서, 용액 도포법이라 함은 스핀 코팅, 딥코팅, 닥터 블레이딩, 잉크젯 프린팅, 스크린 프린팅, 스프레이법, 롤 코팅 등을 의미하지만, 이들만으로 한정되는 것은 아니다.In addition, the compound represented by
이와 같은 방법 외에도, 기판 상에 음극 물질로부터 유기물층, 양극 물질을 차례로 증착시켜 유기 발광 소자를 제조할 수 있다(WO 2003/012890). 다만, 제조 방법이 이에 한정되는 것은 아니다. In addition to such a method, an organic light-emitting device may be manufactured by sequentially depositing an organic material layer and an anode material from a cathode material on a substrate (WO 2003/012890). However, the manufacturing method is not limited thereto.
일례로, 상기 제1 전극은 양극이고, 상기 제2 전극은 음극이거나, 또는 상기 제1 전극은 음극이고, 상기 제2 전극은 양극이다.For example, the first electrode is an anode, the second electrode is a cathode, or the first electrode is a cathode, and the second electrode is an anode.
상기 양극 물질로는 통상 유기물 층으로 정공 주입이 원활할 수 있도록 일함수가 큰 물질이 바람직하다. 상기 양극 물질의 구체적인 예로는 바나듐, 크롬, 구리, 아연, 금과 같은 금속 또는 이들의 합금; 아연 산화물, 인듐 산화물, 인듐주석 산화물(ITO), 인듐아연 산화물(IZO)과 같은 금속 산화물; ZnO:Al 또는 SNO2:Sb와 같은 금속과 산화물의 조합; 폴리(3-메틸티오펜), 폴리[3,4-(에틸렌-1,2-디옥시)티오펜](PEDOT), 폴리피롤 및 폴리아닐린과 같은 전도성 고분자 등이 있으나, 이들에만 한정되는 것은 아니다. As the anode material, a material having a large work function is preferable so that holes can be smoothly injected into the organic material layer. Specific examples of the cathode material include metals such as vanadium, chromium, copper, zinc, and gold, or alloys thereof; Metal oxides such as zinc oxide, indium oxide, indium tin oxide (ITO), and indium zinc oxide (IZO); Combinations of metals and oxides such as ZnO:Al or SNO 2 :Sb; Poly(3-methylthiophene), poly[3,4-(ethylene-1,2-dioxy)thiophene] (PEDOT), conductive polymers such as polypyrrole and polyaniline, and the like, but are not limited thereto.
상기 음극 물질로는 통상 유기물층으로 전자 주입이 용이하도록 일함수가 작은 물질인 것이 바람직하다. 상기 음극 물질의 구체적인 예로는 마그네슘, 칼슘, 나트륨, 칼륨, 티타늄, 인듐, 이트륨, 리튬, 가돌리늄, 알루미늄, 은, 주석 및 납과 같은 금속 또는 이들의 합금; LiF/Al 또는 LiO2/Al과 같은 다층 구조 물질 등이 있으나, 이들에만 한정되는 것은 아니다. It is preferable that the cathode material is a material having a small work function to facilitate electron injection into the organic material layer. Specific examples of the negative electrode material include metals such as magnesium, calcium, sodium, potassium, titanium, indium, yttrium, lithium, gadolinium, aluminum, silver, tin, and lead, or alloys thereof; There are multilayered materials such as LiF/Al or LiO 2 /Al, but are not limited thereto.
상기 정공주입층은 전극으로부터 정공을 주입하는 층으로, 정공 주입 물질로는 정공을 수송하는 능력을 가져 양극에서의 정공 주입효과, 발광층 또는 발광재료에 대하여 우수한 정공 주입 효과를 갖고, 발광층에서 생성된 여기자의 전자주입층 또는 전자주입재료에의 이동을 방지하며, 또한, 박막 형성 능력이 우수한 화합물이 바람직하다. 정공 주입 물질의 HOMO(highest occupied molecular orbital)가 양극 물질의 일함수와 주변 유기물 층의 HOMO 사이인 것이 바람직하다. 정공 주입 물질의 구체적인 예로는 금속 포피린(porphyrin), 올리고티오펜, 아릴아민 계열의 유기물, 헥사니트릴헥사아자트리페닐렌 계열의 유기물, 퀴나크리돈(quinacridone)계열의 유기물, 페릴렌(perylene) 계열의 유기물, 안트라퀴논 및 폴리아닐린과 폴리티오펜 계열의 전도성 고분자 등이 있으나, 이들에만 한정 되는 것은 아니다. The hole injection layer is a layer that injects holes from the electrode, and has the ability to transport holes as a hole injection material, so that it has a hole injection effect at the anode, an excellent hole injection effect for the light emitting layer or the light emitting material, and is generated from the light emitting layer. A compound that prevents the movement of excitons to the electron injection layer or the electron injection material and has excellent thin film formation ability is preferable. It is preferable that the HOMO (highest occupied molecular orbital) of the hole injection material is between the work function of the positive electrode material and the HOMO of the surrounding organic material layer. Specific examples of hole injection materials include metal porphyrin, oligothiophene, arylamine-based organic substances, hexanitrile hexaazatriphenylene-based organic substances, quinacridone-based organic substances, and perylene-based organic substances. Organic substances, anthraquinone, polyaniline, and polythiophene-based conductive polymers, but are not limited thereto.
상기 정공수송층은 정공주입층으로부터 정공을 수취하여 발광층까지 정공을 수송하는 층으로, 정공수송 물질로 양극이나 정공 주입층으로부터 정공을 수송받아 발광층으로 옮겨줄 수 있는 물질로 정공에 대한 이동성이 큰 물질이 적합하다. 구체적인 예로는 아릴아민 계열의 유기물, 전도성 고분자, 및 공액 부분과 비공액 부분이 함께 있는 블록 공중합체 등이 있으나, 이들에만 한정되는 것은 아니다. The hole transport layer is a layer that receives holes from the hole injection layer and transports holes to the emission layer, and is a material capable of transporting holes from the anode or the hole injection layer to the emission layer as a hole transport material. This is suitable. Specific examples include an arylamine-based organic material, a conductive polymer, and a block copolymer having a conjugated portion and a non-conjugated portion, but are not limited thereto.
상기 발광 물질로는 정공수송층과 전자수송층으로부터 정공과 전자를 각각 수송 받아 결합시킴으로써 가시광선 영역의 빛을 낼 수 있는 물질로서, 형광이나 인광에 대한 양자 효율이 좋은 물질이 바람직하다. 구체적인 예로 8-히드록시-퀴놀린 알루미늄 착물(Alq3); 카르바졸 계열 화합물; 이량체화 스티릴(dimerized styryl) 화합물; BAlq; 10-히드록시벤조 퀴놀린-금속 화합물; 벤족사졸, 벤즈티아졸 및 벤즈이미다졸 계열의 화합물; 폴리(p-페닐렌비닐렌)(PPV) 계열의 고분자; 스피로(spiro) 화합물; 폴리플루오렌, 루브렌 등이 있으나, 이들에만 한정되는 것은 아니다. The light-emitting material is a material capable of emitting light in the visible light region by transporting and bonding holes and electrons from the hole transport layer and the electron transport layer, respectively, and a material having good quantum efficiency against fluorescence or phosphorescence is preferable. Specific examples of 8-hydroxy-quinoline aluminum complex (Alq 3 ); Carbazole-based compounds; Dimerized styryl compounds; BAlq; 10-hydroxybenzo quinoline-metal compound; Benzoxazole, benzthiazole, and benzimidazole-based compounds; Poly(p-phenylenevinylene) (PPV)-based polymer; Spiro compounds; Polyfluorene, rubrene, and the like, but are not limited thereto.
상기 발광층은 호스트 재료 및 도펀트 재료를 포함할 수 있다. 호스트 재료는 축합 방향족환 유도체 또는 헤테로환 함유 화합물 등이 있다. 구체적으로 축합 방향족환 유도체로는 안트라센 유도체, 피렌 유도체, 나프탈렌 유도체, 펜타센 유도체, 페난트렌 화합물, 플루오란텐 화합물 등이 있고, 헤테로환 함유 화합물로는 카바졸 유도체, 디벤조퓨란 유도체, 래더형 퓨란 화합물, 피리미딘 유도체 등이 있으나, 이에 한정되지 않는다. The emission layer may include a host material and a dopant material. Host materials include condensed aromatic ring derivatives or heterocyclic-containing compounds. Specifically, condensed aromatic ring derivatives include anthracene derivatives, pyrene derivatives, naphthalene derivatives, pentacene derivatives, phenanthrene compounds, and fluoranthene compounds, and heterocycle-containing compounds include carbazole derivatives, dibenzofuran derivatives, ladder type Furan compounds, pyrimidine derivatives, and the like, but are not limited thereto.
도펀트 재료로는 방향족 아민 유도체, 스트릴아민 화합물, 붕소 착체, 플루오란텐 화합물, 금속 착체 등이 있다. 구체적으로 방향족 아민 유도체로는 치환 또는 비치환된 아릴아미노기를 갖는 축합 방향족환 유도체로서, 아릴아미노기를 갖는 피렌, 안트라센, 크리센, 페리플란텐 등이 있으며, 스티릴아민 화합물로는 치환 또는 비치환된 아릴아민에 적어도 1개의 아릴비닐기가 치환되어 있는 화합물로, 아릴기, 실릴기, 알킬기, 사이클로알킬기 및 아릴아미노기로 이루어진 군에서 1 또는 2 이상 선택되는 치환기가 치환 또는 비치환된다. 구체적으로 스티릴아민, 스티릴디아민, 스티릴트리아민, 스티릴테트라아민 등이 있으나, 이에 한정되지 않는다. 또한, 금속 착체로는 이리듐 착체, 백금 착체 등이 있으나, 이에 한정되지 않는다.Dopant materials include aromatic amine derivatives, strylamine compounds, boron complexes, fluoranthene compounds, and metal complexes. Specifically, the aromatic amine derivative is a condensed aromatic ring derivative having a substituted or unsubstituted arylamino group, and includes pyrene, anthracene, chrysene, and periflanthene having an arylamino group, and the styrylamine compound is substituted or unsubstituted As a compound in which at least one arylvinyl group is substituted on the arylamine, one or two or more substituents selected from the group consisting of aryl group, silyl group, alkyl group, cycloalkyl group and arylamino group are substituted or unsubstituted. Specifically, there are styrylamine, styryldiamine, styryltriamine, styryltetraamine, etc., but are not limited thereto. In addition, the metal complex includes an iridium complex, a platinum complex, and the like, but is not limited thereto.
상기 전자수송층은 전자주입층으로부터 전자를 수취하여 발광층까지 전자를 수송하는 층으로, 전자수송 물질로는 음극으로부터 전자를 잘 주입 받아 발광층으로 옮겨줄 수 있는 물질로서, 전자에 대한 이동성이 큰 물질이 적합하다. 구체적인 예로는 8-히드록시퀴놀린의 Al 착물; Alq3를 포함한 착물; 유기 라디칼 화합물; 히드록시플라본-금속 착물 등이 있으나, 이들에만 한정되는 것은 아니다. 전자수송층은 종래기술에 따라 사용된 바와 같이 임의의 원하는 캐소드 물질과 함께 사용할 수 있다. 특히, 적절한 캐소드 물질의 예는 낮은 일함수를 가지고 알루미늄층 또는 실버층이 뒤따르는 통상적인 물질이다. 구체적으로 세슘, 바륨, 칼슘, 이테르븀 및 사마륨이고, 각 경우 알루미늄 층 또는 실버층이 뒤따른다.The electron transport layer is a layer that receives electrons from the electron injection layer and transports electrons to the emission layer. As an electron transport material, a material capable of receiving electrons from the cathode and transferring them to the emission layer. Suitable. Specific examples include the Al complex of 8-hydroxyquinoline; Complexes containing Alq 3 ; Organic radical compounds; Hydroxyflavone-metal complexes and the like, but are not limited thereto. The electron transport layer can be used with any desired cathode material as used according to the prior art. In particular, examples of suitable cathode materials are conventional materials that have a low work function and are followed by an aluminum layer or a silver layer. Specifically, they are cesium, barium, calcium, ytterbium and samarium, and in each case an aluminum layer or a silver layer follows.
상기 전자주입층은 전극으로부터 전자를 주입하는 층으로, 전자를 수송하는 능력을 갖고, 음극으로부터의 전자 주입 효과, 발광층 또는 발광 재료에 대하여 우수한 전자주입 효과를 가지며, 발광층에서 생성된 여기자의 정공주입층에의 이동을 방지하고, 또한, 박막형성능력이 우수한 화합물이 바람직하다. 구체적으로는 플루오레논, 안트라퀴노다이메탄, 다이페노퀴논, 티오피란 다이옥사이드, 옥사졸, 옥사다이아졸, 트리아졸, 이미다졸, 페릴렌테트라카복실산, 프레오레닐리덴 메탄, 안트론 등과 그들의 유도체, 금속 착체 화합물 및 질소 함유 5원환 유도체 등이 있으나, 이에 한정되지 않는다. The electron injection layer is a layer that injects electrons from the electrode, has the ability to transport electrons, has an electron injection effect from the cathode, an excellent electron injection effect on the light emitting layer or the light emitting material, and hole injection of excitons generated in the light emitting layer A compound that prevents migration to the layer and has excellent thin film formation ability is preferable. Specifically, fluorenone, anthraquinodimethane, diphenoquinone, thiopyran dioxide, oxazole, oxadiazole, triazole, imidazole, perylene tetracarboxylic acid, preorenylidene methane, anthrone, etc. Complex compounds and nitrogen-containing 5-membered ring derivatives, but are not limited thereto.
상기 금속 착체 화합물로서는 8-하이드록시퀴놀리나토 리튬, 비스(8-하이드록시퀴놀리나토)아연, 비스(8-하이드록시퀴놀리나토)구리, 비스(8-하이드록시퀴놀리나토)망간, 트리스(8-하이드록시퀴놀리나토)알루미늄, 트리스(2-메틸-8-하이드록시퀴놀리나토)알루미늄, 트리스(8-하이드록시퀴놀리나토)갈륨, 비스(10-하이드록시벤조[h]퀴놀리나토)베릴륨, 비스(10-하이드록시벤조[h]퀴놀리나토)아연, 비스(2-메틸-8-퀴놀리나토)클로로갈륨, 비스(2-메틸-8-퀴놀리나토)(o-크레졸라토)갈륨, 비스(2-메틸-8-퀴놀리나토)(1-나프톨라토)알루미늄, 비스(2-메틸-8-퀴놀리나토)(2-나프톨라토)갈륨 등이 있으나, 이에 한정되지 않는다.Examples of the metal complex compound include lithium 8-hydroxyquinolinato, bis(8-hydroxyquinolinato)zinc, bis(8-hydroxyquinolinato)copper, bis(8-hydroxyquinolinato)manganese, Tris(8-hydroxyquinolinato)aluminum, tris(2-methyl-8-hydroxyquinolinato)aluminum, tris(8-hydroxyquinolinato)gallium, bis(10-hydroxybenzo[h] Quinolinato)beryllium, bis(10-hydroxybenzo[h]quinolinato)zinc, bis(2-methyl-8-quinolinato)chlorogallium, bis(2-methyl-8-quinolinato)( o-cresolato)gallium, bis(2-methyl-8-quinolinato)(1-naphtholato)aluminum, bis(2-methyl-8-quinolinato)(2-naphtholato)gallium, etc. It is not limited to this.
본 발명에 따른 유기 발광 소자는 사용되는 재료에 따라 전면 발광형, 후면 발광형 또는 양면 발광형일 수 있다.The organic light emitting device according to the present invention may be a top emission type, a bottom emission type, or a double-sided emission type depending on the material used.
또한, 상기 화학식 1로 표시되는 화합물은 유기 발광 소자 외에도 유기 태양 전지 또는 유기 트랜지스터에 포함될 수 있다.In addition, the compound represented by
이하, 상기 화학식 1로 표시되는 화합물 및 이를 포함하는 유기 발광 소자의 제조는, 실시예에서 구체적으로 설명한다. 그러나 하기 실시예는 본 발명을 예시하기 위한 것이며, 본 발명의 범위가 이들에 의하여 한정되는 것이 아님은 전술한 바와 같다.Hereinafter, the preparation of the compound represented by
중간체 Intermediate 제조예Manufacturing example
상기 화학식 1로 표시되는 화합물 1 내지 39(제조예 1 내지 39)을 제조하기 위한 중간체로, 다음과 같은 화합물 A-1, B-1, C-1, D-1, E-1, 및 F-1을 각각 제조하였다. As an intermediate for preparing
구체적으로, Wangsheng Liu, et al., CuBr2-promoted cyclization and bromination of arene-alkynes: C-Br bond formation via reductive elimination of Cu(III) species, Org.Chem.Front. 2016,3,852 문헌의 Scheme 1 및 Table 1을 참고하여, 상기 화합물 A-1, B-1, C-1, D-1, E-1, 및 F-1을 각각 제조하였다. Specifically, Wangsheng Liu, et al., CuBr 2 -promoted cyclization and bromination of arene-alkynes: C-Br bond formation via reductive elimination of Cu(III) species, Org. Chem. Front. Referring to
보다 구체적으로, 하기 Scheme 1(해당 문헌 발췌)의 반응식을 이용하되, 하기 Table 1(해당 문헌 발췌)에 있어서 용매(Solvent)로 MeNO2를 사용하고 그 3 당량(eq)의 CuBr2 및 0.5 당량(eq)의 K2PO4를 사용하는 Entry 15의 조건을 적용하여 각각의 중간체 화합물들을 제조하였다.More specifically, the reaction formula of Scheme 1 (excerpt of the relevant document) is used, but MeNO 2 is used as a solvent in Table 1 (excerpt of the relevant document), and 3 equivalents (eq) of CuBr 2 and 0.5 equivalents Each intermediate compound was prepared by applying the conditions of Entry 15 using (eq) of K 2 PO 4 .
제조예Manufacturing example 1 (화합물 1의 제조) 1 (Preparation of compound 1)
질소 분위기에서 500ml 둥근 바닥 플라스크에 화합물 A-1 (9.14g, 26.58mmol), 2-chloro-4-(dibenzo[b,d]furan-4-yl)-6-phenyl-1,3,5-triazine (8.25g, 23.11mmol)을 테트라하이드로퓨란 280 mL에 완전히 녹인 후 2M 탄산칼륨수용액(140 mL)을 첨가하고, 테트라키스-(트리페닐포스핀)팔라듐(0.80 g, 0.69 mmol)을 넣은 후 3시간 동안 가열 교반하였다. 상온으로 온도를 낮추고 필터링(filtering)하여 베이스(base)를 제거한 후에 THF을 완전히 감압농축하고 에틸아세테이트 240ml으로 재결정하여 상기 화합물 1 (7.44g, 수율: 60%)를 제조하였다.Compound A-1 (9.14g, 26.58mmol), 2-chloro-4-(dibenzo[b,d]furan-4-yl)-6-phenyl-1,3,5- in a 500 ml round bottom flask in a nitrogen atmosphere. After completely dissolving triazine (8.25g, 23.11mmol) in 280 mL of tetrahydrofuran, 2M aqueous potassium carbonate solution (140 mL) was added, and tetrakis-(triphenylphosphine)palladium (0.80 g, 0.69 mmol) was added. Heated and stirred for 3 hours. After lowering the temperature to room temperature and filtering the base to remove the base, THF was completely concentrated under reduced pressure and recrystallized with 240 ml of ethyl acetate to prepare the compound 1 (7.44 g, yield: 60%).
MS[M+H]+= 540MS[M+H] + = 540
제조예Manufacturing example 2 (화합물 2의 제조) 2 (Preparation of compound 2)
질소 분위기에서 500ml 둥근 바닥 플라스크에 화합물 A-1 (8.02g, 23.30mmol), 2-chloro-4,6-diphenyl-1,3,5-triazine (6.95g, 20.26mmol)을 테트라하이드로퓨란 260 mL에 완전히 녹인 후 2M 탄산칼륨수용액(130 mL)을 첨가하고, 테트라키스-(트리페닐포스핀)팔라듐(0.70 g, 0.61 mmol)을 넣은 후 3시간 동안 가열 교반하였다. 상온으로 온도를 낮추고 필터링(filtering)하여 베이스(base)를 제거한 후에 THF을 완전히 감압농축하고 아세토니트릴 180ml으로 재결정하여 상기 화합물 2 (6.27g, 수율: 59%)를 제조하였다.Compound A-1 (8.02g, 23.30mmol), 2-chloro-4,6-diphenyl-1,3,5-triazine (6.95g, 20.26mmol) in a 500ml round bottom flask in a nitrogen atmosphere and 260 mL of tetrahydrofuran After completely dissolved in 2M potassium carbonate aqueous solution (130 mL) was added, tetrakis-(triphenylphosphine)palladium (0.70 g, 0.61 mmol) was added, followed by heating and stirring for 3 hours. After lowering the temperature to room temperature and filtering (filtering) to remove the base, THF was completely concentrated under reduced pressure and recrystallized with 180 ml of acetonitrile to prepare Compound 2 (6.27 g, yield: 59%).
MS[M+H]+= 526MS[M+H] + = 526
제조예Manufacturing example 3 (화합물 3의 제조) 3 (Preparation of compound 3)
질소 분위기에서 500ml 둥근 바닥 플라스크에 화합물 A-1 (6.79g, 19.74mmol), 4-([1,1'-biphenyl]-4-yl)-6-chloro-2-phenylpyrimidine (5.87g, 17.16mmol)을 테트라하이드로퓨란 240 mL에 완전히 녹인 후 2M 탄산칼륨수용액(120 mL)을 첨가하고, 테트라키스-(트리페닐포스핀)팔라듐(0.59 g, 0.51 mmol)을 넣은 후 3시간 동안 가열 교반하였다. 상온으로 온도를 낮추고 필터링(filtering)하여 베이스(base)를 제거한 후에 THF을 완전히 감압농축하고 에틸아세테이트 230ml으로 재결정하여 상기 화합물 3 (5.09g, 수율: 56%)를 제조하였다. Compound A-1 (6.79g, 19.74mmol), 4-([1,1'-biphenyl]-4-yl)-6-chloro-2-phenylpyrimidine (5.87g, 17.16mmol) in a 500ml round bottom flask in a nitrogen atmosphere ) Was completely dissolved in 240 mL of tetrahydrofuran, 2M aqueous potassium carbonate solution (120 mL) was added, tetrakis-(triphenylphosphine) palladium (0.59 g, 0.51 mmol) was added, followed by heating and stirring for 3 hours. After lowering the temperature to room temperature and filtering the base to remove the base, THF was completely concentrated under reduced pressure and recrystallized with 230 ml of ethyl acetate to prepare the compound 3 (5.09 g, yield: 56%).
MS[M+H]+= 525MS[M+H] + = 525
제조예Manufacturing example 4 (화합물 4의 제조) 4 (Preparation of compound 4)
질소 분위기에서 500ml 둥근 바닥 플라스크에 화합물 A-1 (5.69g, 16.55mmol), 2-(4-bromophenyl)-4,6-diphenyl-1,3,5-triazine (5.57g, 14.39mmol)을 테트라하이드로퓨란 300 mL에 완전히 녹인 후 2M 탄산칼륨수용액(150 mL)을 첨가하고, 테트라키스-(트리페닐포스핀)팔라듐(0.50 g, 0.43 mmol)을 넣은 후 3시간 동안 가열 교반하였다. 상온으로 온도를 낮추고 필터링(filtering)하여 베이스(base)를 제거한 후에 THF을 완전히 감압농축하고 테트라하이드로퓨란 210ml으로 재결정하여 상기 화합물 4 (6.17g, 수율: 81%)를 제조하였다.Compound A-1 (5.69g, 16.55mmol), 2-(4-bromophenyl)-4,6-diphenyl-1,3,5-triazine (5.57g, 14.39mmol) in a 500ml round-bottom flask in a nitrogen atmosphere. After completely dissolving in 300 mL of hydrofuran, 2M aqueous potassium carbonate solution (150 mL) was added, tetrakis-(triphenylphosphine) palladium (0.50 g, 0.43 mmol) was added, followed by heating and stirring for 3 hours. After lowering the temperature to room temperature and filtering (filtering) to remove the base, THF was completely concentrated under reduced pressure and recrystallized with 210 ml of tetrahydrofuran to prepare Compound 4 (6.17 g, yield: 81%).
MS[M+H]+= 526MS[M+H] + = 526
제조예Manufacturing example 5 (화합물 5의 제조) 5 (Preparation of compound 5)
질소 분위기에서 500ml 둥근 바닥 플라스크에 화합물 B-1 (8.37g, 17.89mmol), 2-(4-bromophenyl)-4,6-diphenyl-1,3,5-triazine (6.02g, 15.56mmol)을 테트라하이드로퓨란 250 mL에 완전히 녹인 후 2M 탄산칼륨수용액(125 mL)을 첨가하고, 테트라키스-(트리페닐포스핀)팔라듐(0.54 g, 0.47 mmol)을 넣은 후 3시간 동안 가열 교반하였다. 상온으로 온도를 낮추고 필터링(filtering)하여 베이스(base)를 제거한 후에 THF을 완전히 감압농축하고 테트라하이드로퓨란 180ml으로 재결정하여 상기 화합물 5 (5.36g, 수율: 53%)를 제조하였다.Compound B-1 (8.37g, 17.89mmol), 2-(4-bromophenyl)-4,6-diphenyl-1,3,5-triazine (6.02g, 15.56mmol) in a 500ml round-bottom flask in a nitrogen atmosphere. After completely dissolving in 250 mL of hydrofuran, 2M aqueous potassium carbonate solution (125 mL) was added, tetrakis-(triphenylphosphine) palladium (0.54 g, 0.47 mmol) was added, followed by heating and stirring for 3 hours. After lowering the temperature to room temperature and filtering the base to remove the base, THF was completely concentrated under reduced pressure and recrystallized with tetrahydrofuran (180 ml) to prepare Compound 5 (5.36 g, yield: 53%).
MS[M+H]+= 650MS[M+H] + = 650
제조예Manufacturing example 6 (화합물 6의 제조) 6 (Preparation of compound 6)
질소 분위기에서 500ml 둥근 바닥 플라스크에 화합물 C-1 (15.45g, 33.15mmol), 2-chloro-4,6-diphenyl-1,3,5-triazine (7.64g, 28.83mmol)을 테트라하이드로퓨란 200 mL에 완전히 녹인 후 2M 탄산칼륨수용액(100 mL)을 첨가하고, 테트라키스-(트리페닐포스핀)팔라듐(1.00 g, 0.86 mmol)을 넣은 후 3시간 동안 가열 교반하였다. 상온으로 온도를 낮추고 필터링(filtering)하여 베이스(base)를 제거한 후에 THF을 완전히 감압농축하고 에틸아세테이트 150ml으로 재결정하여 상기 화합물 6 (7.66g, 수율: 46%)를 제조하였다.Compound C-1 (15.45g, 33.15mmol), 2-chloro-4,6-diphenyl-1,3,5-triazine (7.64g, 28.83mmol) in a 500ml round bottom flask in a nitrogen atmosphere and 200 mL of tetrahydrofuran After completely dissolved in 2M potassium carbonate aqueous solution (100 mL) was added, tetrakis-(triphenylphosphine)palladium (1.00 g, 0.86 mmol) was added, followed by heating and stirring for 3 hours. After lowering the temperature to room temperature and filtering (filtering) to remove the base, THF was completely concentrated under reduced pressure and recrystallized with 150 ml of ethyl acetate to prepare Compound 6 (7.66 g, yield: 46%).
MS[M+H]+= 570MS[M+H] + = 570
제조예Manufacturing example 7 (화합물 7의 제조) 7 (Preparation of compound 7)
질소 분위기에서 500ml 둥근 바닥 플라스크에 화합물 C-1 (8.46g, 18.16mmol), 2-chloro-4-(dibenzo[b,d]thiophen-2-yl)-6-phenyl-1,3,5-triazine (5.89g, 15.79mmol)을 테트라하이드로퓨란 220 mL에 완전히 녹인 후 2M 탄산칼륨수용액(110 mL)을 첨가하고, 테트라키스-(트리페닐포스핀)팔라듐(0.55 g, 0.47 mmol)을 넣은 후 3시간 동안 가열 교반하였다.상온으로 온도를 낮추고 필터링(filtering)하여 베이스(base)를 제거한 후에 THF을 완전히 감압농축하고 에틸아세테이트 180ml으로 재결정하여 상기 화합물 7 (5.36g, 수율: 50%)를 제조하였다.Compound C-1 (8.46g, 18.16mmol), 2-chloro-4-(dibenzo[b,d]thiophen-2-yl)-6-phenyl-1,3,5- in a 500ml round bottom flask in nitrogen atmosphere. After completely dissolving triazine (5.89g, 15.79mmol) in 220 mL of tetrahydrofuran, 2M aqueous potassium carbonate solution (110 mL) was added, and tetrakis-(triphenylphosphine)palladium (0.55 g, 0.47 mmol) was added. The mixture was heated and stirred for 3 hours. After lowering the temperature to room temperature and filtering to remove the base, THF was completely concentrated under reduced pressure and recrystallized with 180 ml of ethyl acetate to prepare compound 7 (5.36 g, yield: 50%). I did.
MS[M+H]+= 678MS[M+H] + = 678
제조예Manufacturing example 8 (화합물 8의 제조) 8 (Preparation of compound 8)
질소 분위기에서 500ml 둥근 바닥 플라스크에 화합물 B-1 (5.76g, 16.75mmol), 4'-(4-chloro-6-phenyl-1,3,5-triazin-2-yl)-[1,1'-biphenyl]-4-carbonitrile (5.36g, 14.57mmol)을 테트라하이드로퓨란 260 mL에 완전히 녹인 후 2M 탄산칼륨수용액(130 mL)을 첨가하고, 테트라키스-(트리페닐포스핀)팔라듐(0.50 g, 0.44 mmol)을 넣은 후 3시간 동안 가열 교반하였다.상온으로 온도를 낮추고 필터링(filtering)하여 베이스(base)를 제거한 후에 THF을 완전히 감압농축하고 에틸아세테이트 220ml으로 재결정하여 상기 화합물 8 (8.85g,수율: 77%)를 제조하였다.Compound B-1 (5.76g, 16.75mmol), 4'-(4-chloro-6-phenyl-1,3,5-triazin-2-yl)-[1,1' in a 500 ml round bottom flask in a nitrogen atmosphere. -biphenyl]-4-carbonitrile (5.36g, 14.57mmol) was completely dissolved in 260 mL of tetrahydrofuran, and then 2M aqueous potassium carbonate solution (130 mL) was added, and tetrakis-(triphenylphosphine)palladium (0.50 g, 0.44 mmol) was added, followed by heating and stirring for 3 hours. After lowering the temperature to room temperature and filtering to remove the base, THF was completely concentrated under reduced pressure and recrystallized with 220 ml of ethyl acetate, and the compound 8 (8.85 g, yield) : 77%) was prepared.
MS[M+H]+= 675MS[M+H] + = 675
제조예Manufacturing example 9 (화합물 9의 제조) 9 (Preparation of compound 9)
질소 분위기에서 500ml 둥근 바닥 플라스크에 화합물 C-1 (6.30g, 13.52mmol), 3-(4-chloro-6-phenyl-1,3,5-triazin-2-yl)-9-phenyl-9H-carbazole (5.08g, 11.76mmol)을 테트라하이드로퓨란 210 mL에 완전히 녹인 후 2M 탄산칼륨수용액(105 mL)을 첨가하고, 테트라키스-(트리페닐포스핀)팔라듐(0.41 g, 0.35 mmol)을 넣은 후 3시간 동안 가열 교반하였다.상온으로 온도를 낮추고 필터링(filtering)하여 베이스(base)를 제거한 후에 THF을 완전히 감압농축하고 에틸아세테이트 210ml으로 재결정하여 상기 화합물 9 (4.08g, 수율: 47%)를 제조하였다.Compound C-1 (6.30g, 13.52mmol), 3-(4-chloro-6-phenyl-1,3,5-triazin-2-yl)-9-phenyl-9H- in a 500ml round bottom flask in nitrogen atmosphere After completely dissolving carbazole (5.08g, 11.76mmol) in 210 mL of tetrahydrofuran, 2M aqueous potassium carbonate solution (105 mL) was added, and tetrakis-(triphenylphosphine)palladium (0.41 g, 0.35 mmol) was added. The mixture was heated and stirred for 3 hours. After lowering the temperature to room temperature and filtering to remove the base, THF was completely concentrated under reduced pressure and recrystallized with 210 ml of ethyl acetate to prepare Compound 9 (4.08 g, yield: 47%). I did.
MS[M+H]+= 737MS[M+H] + = 737
제조예Manufacturing example 10 (화합물 10의 제조) 10 (Preparation of compound 10)
질소 분위기에서 500ml 둥근 바닥 플라스크에 화합물 A-1 (9.53g, 20.44mmol), 2-(3'-bromo-[1,1'-biphenyl]-3-yl)-4,6-diphenyl-1,3,5-triazine (8.23g, 17.78mmol)을 테트라하이드로퓨란 280 mL에 완전히 녹인 후 2M 탄산칼륨수용액(140 mL)을 첨가하고, 테트라키스-(트리페닐포스핀)팔라듐(0.62 g, 0.53 mmol)을 넣은 후 3시간 동안 가열 교반하였다. 상온으로 온도를 낮추고 필터링(filtering)하여 베이스(base)를 제거한 후에 THF을 완전히 감압농축하고 테트라하이드로퓨란 210ml으로 재결정하여 상기 화합물 10 (7.79g, 수율 73%)를 제조하였다.Compound A-1 (9.53g, 20.44mmol), 2-(3'-bromo-[1,1'-biphenyl]-3-yl)-4,6-diphenyl-1, in a 500 ml round bottom flask in a
MS[M+H]+= 602MS[M+H] + = 602
제조예Manufacturing example 11 (화합물 11의 제조) 11 (Preparation of compound 11)
질소 분위기에서 500ml 둥근 바닥 플라스크에 화합물 A-1 (6.49g, 18.85mmol), 2-(7-bromo-9,9-dimethyl-9H-fluoren-2-yl)-4,6-diphenylpyrimidine (8.23g, 16.39mmol)을 테트라하이드로퓨란 200 mL에 완전히 녹인 후 2M 탄산칼륨수용액(100 mL)을 첨가하고, 테트라키스-(트리페닐포스핀)팔라듐(0.57 g, 0.49 mmol)을 넣은 후 3시간 동안 가열 교반하였다. 상온으로 온도를 낮추고 필터링(filtering)하여 베이스(base)를 제거한 후에 THF을 완전히 감압농축하고 테트라하이드로퓨란 210ml으로 재결정하여 상기 화합물 11 (7.79g, 수율 74%)를 제조하였다.Compound A-1 (6.49g, 18.85mmol), 2-(7-bromo-9,9-dimethyl-9H-fluoren-2-yl)-4,6-diphenylpyrimidine (8.23g) in a 500ml round bottom flask in a nitrogen atmosphere. , 16.39mmol) was completely dissolved in 200 mL of tetrahydrofuran, 2M aqueous potassium carbonate solution (100 mL) was added, tetrakis-(triphenylphosphine) palladium (0.57 g, 0.49 mmol) was added, and then heated for 3 hours. Stirred. After lowering the temperature to room temperature and filtering (filtering) to remove the base, THF was completely concentrated under reduced pressure and recrystallized with 210 ml of tetrahydrofuran to prepare Compound 11 (7.79 g, yield 74%).
MS[M+H]+= 641MS[M+H] + = 641
제조예Manufacturing example 12 (화합물 12의 제조) 12 (Preparation of compound 12)
질소 분위기에서 500ml 둥근 바닥 플라스크에 화합물 A-1 (7.66g, 22.28mmol), 2-chloro-4,6-di(naphthalen-1-yl)-1,3,5-triazine (7.11g, 19.37mmol)을 테트라하이드로퓨란 180 mL에 완전히 녹인 후 2M 탄산칼륨수용액(90 mL)을 첨가하고, 테트라키스-(트리페닐포스핀)팔라듐(0.67 g, 0.58 mmol)을 넣은 후 3시간 동안 가열 교반하였다. 상온으로 온도를 낮추고 필터링(filtering)하여 베이스(base)를 제거한 후에 THF을 완전히 감압농축하고 아세토니트릴 220ml으로 재결정하여 상기 화합물 12 (6.42g, 수율: 60%)를 제조하였다.Compound A-1 (7.66g, 22.28mmol), 2-chloro-4,6-di(naphthalen-1-yl)-1,3,5-triazine (7.11g, 19.37mmol) in a 500ml round bottom flask under nitrogen atmosphere ) Was completely dissolved in 180 mL of tetrahydrofuran, 2M aqueous potassium carbonate solution (90 mL) was added, tetrakis-(triphenylphosphine) palladium (0.67 g, 0.58 mmol) was added, followed by heating and stirring for 3 hours. After lowering the temperature to room temperature and filtering the base to remove the base, THF was completely concentrated under reduced pressure and recrystallized with 220 ml of acetonitrile to prepare Compound 12 (6.42g, yield: 60%).
MS[M+H]+= 550MS[M+H] + = 550
제조예Manufacturing example 13 (화합물 13의 제조) 13 (Preparation of compound 13)
질소 분위기에서 500ml 둥근 바닥 플라스크에 화합물 B-1 (8.39g, 17.93mmol), 2-chloro-4-(9,9-dimethyl-9H-fluoren-2-yl)-6-phenyl-1,3,5-triazine (5.97g, 15.59mmol)을 테트라하이드로퓨란 240 mL에 완전히 녹인 후 2M 탄산칼륨수용액(120 mL)을 첨가하고, 테트라키스-(트리페닐포스핀)팔라듐(0.54 g, 0.47 mmol)을 넣은 후 3시간 동안 가열 교반하였다. 상온으로 온도를 낮추고 필터링(filtering)하여 베이스(base)를 제거한 후에 THF을 완전히 감압농축하고 에틸아세테이트 190ml으로 재결정하여 상기 화합물 13 (5.27g, 수율: 49%)를 제조하였다.Compound B-1 (8.39g, 17.93mmol), 2-chloro-4-(9,9-dimethyl-9H-fluoren-2-yl)-6-phenyl-1,3, in a 500ml round bottom flask in a nitrogen atmosphere After completely dissolving 5-triazine (5.97g, 15.59mmol) in 240 mL of tetrahydrofuran, 2M aqueous potassium carbonate solution (120 mL) was added, and tetrakis-(triphenylphosphine)palladium (0.54 g, 0.47 mmol) was added. After adding, the mixture was heated and stirred for 3 hours. After lowering the temperature to room temperature and filtering (filtering) to remove the base, THF was completely concentrated under reduced pressure and recrystallized with 190 ml of ethyl acetate to prepare Compound 13 (5.27 g, yield: 49%).
MS[M+H]+= 690MS[M+H] + = 690
제조예Manufacturing example 14 (화합물 14의 제조) 14 (Preparation of compound 14)
질소 분위기에서 500ml 둥근 바닥 플라스크에 화합물 E-1 (11.41g, 20.98mmol), 2-chloro-4,6-diphenyl-1,3,5-triazine (5.97g, 15.59mmol)을 테트라하이드로퓨란 240 mL에 완전히 녹인 후 2M 탄산칼륨수용액(120 mL)을 첨가하고, 테트라키스-(트리페닐포스핀)팔라듐(0.63 g, 0.55 mmol)을 넣은 후 3시간 동안 가열 교반하였다. 상온으로 온도를 낮추고 필터링(filtering)하여 베이스(base)를 제거한 후에 THF을 완전히 감압농축하고 에틸아세테이트 240ml으로 재결정하여 상기 화합물 14 (8.47g, 수율: 71%)를 제조하였다.Compound E-1 (11.41g, 20.98mmol), 2-chloro-4,6-diphenyl-1,3,5-triazine (5.97g, 15.59mmol) in a 500ml round bottom flask in a nitrogen atmosphere and 240 mL of tetrahydrofuran After completely dissolved in 2M potassium carbonate aqueous solution (120 mL) was added, tetrakis-(triphenylphosphine)palladium (0.63 g, 0.55 mmol) was added, followed by heating and stirring for 3 hours. After lowering the temperature to room temperature and filtering to remove the base, THF was completely concentrated under reduced pressure and recrystallized with 240 ml of ethyl acetate to prepare the compound 14 (8.47 g, yield: 71%).
MS[M+H]+= 650MS[M+H] + = 650
제조예Manufacturing example 15 (화합물 15의 제조) 15 (Preparation of compound 15)
질소 분위기에서 500ml 둥근 바닥 플라스크에 화합물 D-1 (7.79g, 18.55mmol), 2-chloro-4-(dibenzo[b,d]furan-4-yl)-6-phenyl-1,3,5-triazine (5.76g, 16.13mmol)을 테트라하이드로퓨란 240 mL에 완전히 녹인 후 2M 탄산칼륨수용액(120 mL)을 첨가하고, 테트라키스-(트리페닐포스핀)팔라듐(0.56 g, 0.48 mmol)을 넣은 후 6시간 동안 가열 교반하였다. 상온으로 온도를 낮추고 필터링(filtering)하여 베이스(base)를 제거한 후에 THF을 완전히 감압농축하고 에틸아세테이트 200ml으로 재결정하여 상기 화합물 15 (7.11g, 수율: 72%)를 제조하였다.Compound D-1 (7.79g, 18.55mmol), 2-chloro-4-(dibenzo[b,d]furan-4-yl)-6-phenyl-1,3,5- in a 500ml round bottom flask in a nitrogen atmosphere. After completely dissolving triazine (5.76g, 16.13mmol) in 240 mL of tetrahydrofuran, 2M aqueous potassium carbonate solution (120 mL) was added, and tetrakis-(triphenylphosphine)palladium (0.56 g, 0.48 mmol) was added. Heated and stirred for 6 hours. After lowering the temperature to room temperature and filtering the base to remove the base, THF was completely concentrated under reduced pressure and recrystallized with 200 ml of ethyl acetate to prepare the compound 15 (7.11 g, yield: 72%).
MS[M+H]+= 692MS[M+H] + = 692
제조예Manufacturing example 16 (화합물 16의 제조) 16 (Preparation of compound 16)
질소 분위기에서 500ml 둥근 바닥 플라스크에 화합물 F-1 (12.12g, 17.14mmol), 2-chloro-4,6-diphenyl-1,3,5-triazine (3.98g, 14.91mmol)을 테트라하이드로퓨란 240 mL에 완전히 녹인 후 2M 탄산칼륨수용액(120 mL)을 첨가하고, 테트라키스-(트리페닐포스핀)팔라듐(0.52 g, 0.45 mmol)을 넣은 후 2시간 동안 가열 교반하였다. 상온으로 온도를 낮추고 필터링(filtering)하여 베이스(base)를 제거한 후에 THF을 완전히 감압농축하고 에틸아세테이트 240ml으로 재결정하여 상기 화합물 16 (7.60g, 수율: 63%)를 제조하였다.Compound F-1 (12.12g, 17.14mmol), 2-chloro-4,6-diphenyl-1,3,5-triazine (3.98g, 14.91mmol) in a 500ml round bottom flask in a nitrogen atmosphere and 240 mL of tetrahydrofuran After completely dissolved in 2M potassium carbonate aqueous solution (120 mL) was added, tetrakis-(triphenylphosphine) palladium (0.52 g, 0.45 mmol) was added, followed by heating and stirring for 2 hours. After lowering the temperature to room temperature and filtering the base to remove the base, THF was completely concentrated under reduced pressure and recrystallized with 240 ml of ethyl acetate to prepare the compound 16 (7.60 g, yield: 63%).
MS[M+H]+= 813MS[M+H] + = 813
제조예Manufacturing example 17 (화합물 17의 제조) 17 (Preparation of compound 17)
질소 분위기에서 500ml 둥근 바닥 플라스크에 화합물 E-1 (10.65g, 19.65mmol), 4-([1,1'-biphenyl]-4-yl)-6-chloro-2-phenylpyrimidine (5.86g, 17.08mmol)을 테트라하이드로퓨란 240 mL에 완전히 녹인 후 2M 탄산칼륨수용액(120 mL)을 첨가하고, 테트라키스-(트리페닐포스핀)팔라듐(0.59 g, 0.51 mmol)을 넣은 후 2시간 동안 가열 교반하였다. 상온으로 온도를 낮추고 필터링(filtering)하여 베이스(base)를 제거한 후에 THF을 완전히 감압농축하고 에틸아세테이트 210ml으로 재결정하여 상기 화합물 17 (7.68g, 수율: 62%)를 제조하였다.Compound E-1 (10.65g, 19.65mmol), 4-([1,1'-biphenyl]-4-yl)-6-chloro-2-phenylpyrimidine (5.86g, 17.08mmol) in a 500ml round bottom flask in a nitrogen atmosphere. ) Was completely dissolved in 240 mL of tetrahydrofuran, 2M aqueous potassium carbonate solution (120 mL) was added, tetrakis-(triphenylphosphine) palladium (0.59 g, 0.51 mmol) was added, followed by heating and stirring for 2 hours. After lowering the temperature to room temperature and filtering the base to remove the base, THF was completely concentrated under reduced pressure and recrystallized with 210 ml of ethyl acetate to prepare the compound 17 (7.68 g, yield: 62%).
MS[M+H]+= 725MS[M+H] + = 725
제조예Manufacturing example 18 (화합물 18의 제조) 18 (Preparation of compound 18)
질소 분위기에서 500ml 둥근 바닥 플라스크에 화합물 D-1 (10.90g, 25.95mmol), 2-([1,1'-biphenyl]-3-yl)-4-chloro-6-phenyl-1,3,5-triazine (8.27g, 22.56mmol)을 테트라하이드로퓨란 260 mL에 완전히 녹인 후 2M 탄산칼륨수용액(130 mL)을 첨가하고, 테트라키스-(트리페닐포스핀)팔라듐(0.78 g, 0.68 mmol)을 넣은 후 4시간 동안 가열 교반하였다. 상온으로 온도를 낮추고 필터링(filtering)하여 베이스(base)를 제거한 후에 THF을 완전히 감압농축하고 에틸아세테이트 250ml으로 재결정하여 상기 화합물 18 (10.06g, 수율: 71%)를 제조하였다.Compound D-1 (10.90 g, 25.95 mmol), 2-([1,1'-biphenyl]-3-yl)-4-chloro-6-phenyl-1,3,5 in a 500 ml round bottom flask in a nitrogen atmosphere. -triazine (8.27g, 22.56mmol) was completely dissolved in 260 mL of tetrahydrofuran, 2M aqueous potassium carbonate solution (130 mL) was added, and tetrakis-(triphenylphosphine)palladium (0.78 g, 0.68 mmol) was added. After heating and stirring for 4 hours. After lowering the temperature to room temperature and filtering the base to remove the base, THF was completely concentrated under reduced pressure and recrystallized with 250 ml of ethyl acetate to prepare the compound 18 (10.06 g, yield: 71%).
MS[M+H]+= 702MS[M+H] + = 702
제조예Manufacturing example 19 (화합물 19의 제조) 19 (Preparation of compound 19)
질소 분위기에서 500ml 둥근 바닥 플라스크에 화합물 D-1 (12.04g, 28.67mmol), 2-([1,1'-biphenyl]-4-yl)-4-chloro-6-phenyl-1,3,5-triazine (8.55g, 24.93mmol)을 테트라하이드로퓨란 280 mL에 완전히 녹인 후 2M 탄산칼륨수용액(140 mL)을 첨가하고, 테트라키스-(트리페닐포스핀)팔라듐(0.86 g, 0.75 mmol)을 넣은 후 3시간 동안 가열 교반하였다. 상온으로 온도를 낮추고 필터링(filtering)하여 베이스(base)를 제거한 후에 THF을 완전히 감압농축하고 에틸아세테이트 220ml으로 재결정하여 상기 화합물 19 (10.06g, 수율: 71%)를 제조하였다.Compound D-1 (12.04g, 28.67mmol), 2-([1,1'-biphenyl]-4-yl)-4-chloro-6-phenyl-1,3,5 in a 500 ml round bottom flask in a nitrogen atmosphere. After -triazine (8.55g, 24.93mmol) was completely dissolved in 280 mL of tetrahydrofuran, 2M aqueous potassium carbonate solution (140 mL) was added, and tetrakis-(triphenylphosphine)palladium (0.86 g, 0.75 mmol) was added. Then, it was heated and stirred for 3 hours. After lowering the temperature to room temperature and filtering to remove the base, THF was completely concentrated under reduced pressure and recrystallized with 220 ml of ethyl acetate to prepare Compound 19 (10.06 g, yield: 71%).
MS[M+H]+= 678MS[M+H] + = 678
제조예Manufacturing example 20 (화합물 20의 제조) 20 (Preparation of compound 20)
질소 분위기에서 500ml 둥근 바닥 플라스크에 화합물 D-1 (7.50g, 17.86mmol), 2-(4-bromophenyl)-4,6-diphenyl-1,3,5-triazine (6.01g, 15.53mmol)을 테트라하이드로퓨란 300 mL에 완전히 녹인 후 2M 탄산칼륨수용액(150 mL)을 첨가하고, 테트라키스-(트리페닐포스핀)팔라듐(0.54 g, 0.47 mmol)을 넣은 후 3시간 동안 가열 교반하였다. 상온으로 온도를 낮추고 필터링(filtering)하여 베이스(base)를 제거한 후에 THF을 완전히 감압농축하고 테트라하이드로퓨란 230ml으로 재결정하여 상기 화합물 20 (7.39g, 수율: 79%)를 제조하였다.Compound D-1 (7.50g, 17.86mmol), 2-(4-bromophenyl)-4,6-diphenyl-1,3,5-triazine (6.01g, 15.53mmol) in a 500ml round-bottom flask in a nitrogen atmosphere was tetra-treated After completely dissolving in 300 mL of hydrofuran, 2M aqueous potassium carbonate solution (150 mL) was added, tetrakis-(triphenylphosphine) palladium (0.54 g, 0.47 mmol) was added, followed by heating and stirring for 3 hours. After lowering the temperature to room temperature and filtering (filtering) to remove the base, THF was completely concentrated under reduced pressure and recrystallized with 230 ml of tetrahydrofuran to prepare Compound 20 (7.39 g, yield: 79%).
MS[M+H]+= 678MS[M+H] + = 678
제조예Manufacturing example 21 (화합물 21의 제조) 21 (Preparation of compound 21)
질소 분위기에서 500ml 둥근 바닥 플라스크에 화합물 D-1 (7.91g, 18.84mmol), 2-(4-chloronaphthalen-1-yl)-4,6-diphenyl-1,3,5-triazine (6.44g, 16.39mmol)을 테트라하이드로퓨란 260 mL에 완전히 녹인 후 2M 탄산칼륨수용액(130 mL)을 첨가하고, 테트라키스-(트리페닐포스핀)팔라듐(0.57 g, 0.49 mmol)을 넣은 후 8시간 동안 가열 교반하였다. 상온으로 온도를 낮추고 필터링(filtering)하여 베이스(base)를 제거한 후에 THF을 완전히 감압농축하고 테트라하이드로퓨란 250ml으로 재결정하여 상기 화합물 21 (5.42g, 수율: 55%)를 제조하였다.Compound D-1 (7.91g, 18.84mmol), 2-(4-chloronaphthalen-1-yl)-4,6-diphenyl-1,3,5-triazine (6.44g, 16.39) in a 500ml round bottom flask under nitrogen atmosphere mmol) was completely dissolved in 260 mL of tetrahydrofuran, 2M aqueous potassium carbonate solution (130 mL) was added, tetrakis-(triphenylphosphine) palladium (0.57 g, 0.49 mmol) was added, followed by heating and stirring for 8 hours. . After lowering the temperature to room temperature and filtering the base to remove the base, THF was completely concentrated under reduced pressure and recrystallized with tetrahydrofuran (250 ml) to prepare the compound 21 (5.42 g, yield: 55%).
MS[M+H]+= 728MS[M+H] + = 728
제조예Manufacturing example 22 (화합물 22의 제조) 22 (Preparation of compound 22)
질소 분위기에서 500ml 둥근 바닥 플라스크에 화합물 E-1 (9.65g, 17.74mmol), 2-(3-bromophenyl)-4,6-diphenyl-1,3,5-triazine (5.97g, 15.43mmol)을 테트라하이드로퓨란 300 mL에 완전히 녹인 후 2M 탄산칼륨수용액(150 mL)을 첨가하고, 테트라키스-(트리페닐포스핀)팔라듐(0.53 g, 0.46 mmol)을 넣은 후 7시간 동안 가열 교반하였다. 상온으로 온도를 낮추고 필터링(filtering)하여 베이스(base)를 제거한 후에 THF을 완전히 감압농축하고 테트라하이드로퓨란 210ml으로 재결정하여 상기 화합물 22 (8.71g, 수율: 78%)를 제조하였다.Compound E-1 (9.65g, 17.74mmol), 2-(3-bromophenyl)-4,6-diphenyl-1,3,5-triazine (5.97g, 15.43mmol) in a 500ml round-bottom flask in a nitrogen atmosphere. After completely dissolving in 300 mL of hydrofuran, 2M aqueous potassium carbonate solution (150 mL) was added, tetrakis-(triphenylphosphine) palladium (0.53 g, 0.46 mmol) was added, followed by heating and stirring for 7 hours. After lowering the temperature to room temperature and filtering the base to remove the base, THF was completely concentrated under reduced pressure and recrystallized with 210 ml of tetrahydrofuran to prepare Compound 22 (8.71 g, yield: 78%).
MS[M+H]+= 726MS[M+H] + = 726
제조예Manufacturing example 23 (화합물 23의 제조) 23 (Preparation of compound 23)
질소 분위기에서 500ml 둥근 바닥 플라스크에 화합물 E-1 (9.35g, 17.19mmol), 4-(3-bromophenyl)-2,6-diphenylpyrimidine (5.77g, 14.95mmol)을 테트라하이드로퓨란 220 mL에 완전히 녹인 후 2M 탄산칼륨수용액(110 mL)을 첨가하고, 테트라키스-(트리페닐포스핀)팔라듐(0.52 g, 0.45 mmol)을 넣은 후 6시간 동안 가열 교반하였다. 상온으로 온도를 낮추고 필터링(filtering)하여 베이스(base)를 제거한 후에 THF을 완전히 감압농축하고 테트라하이드로퓨란 210ml으로 재결정하여 상기 화합물 23 (7.63g, 수율: 71%)를 제조하였다.Compound E-1 (9.35g, 17.19mmol), 4-(3-bromophenyl)-2,6-diphenylpyrimidine (5.77g, 14.95mmol) was completely dissolved in 220 mL of tetrahydrofuran in a 500 ml round bottom flask in a nitrogen atmosphere, and then completely dissolved in 220 mL of tetrahydrofuran. 2M aqueous potassium carbonate solution (110 mL) was added, tetrakis-(triphenylphosphine)palladium (0.52 g, 0.45 mmol) was added, followed by heating and stirring for 6 hours. After lowering the temperature to room temperature and filtering the base to remove the base, THF was completely concentrated under reduced pressure and recrystallized with 210 ml of tetrahydrofuran to prepare Compound 23 (7.63 g, yield: 71%).
MS[M+H]+= 725MS[M+H] + = 725
제조예Manufacturing example 24 (화합물 24의 제조) 24 (Preparation of compound 24)
질소 분위기에서 500ml 둥근 바닥 플라스크에 화합물 B-1 (8.39g, 17.93mmol), 2-chloro-4-(9,9-dimethyl-9H-fluoren-2-yl)-6-phenyl-1,3,5-triazine (5.97g, 15.59mmol)을 테트라하이드로퓨란 240 mL에 완전히 녹인 후 2M 탄산칼륨수용액(120 mL)을 첨가하고, 테트라키스-(트리페닐포스핀)팔라듐(0.54 g, 0.47 mmol)을 넣은 후 3시간 동안 가열 교반하였다. 상온으로 온도를 낮추고 필터링(filtering)하여 베이스(base)를 제거한 후에 THF을 완전히 감압농축하고 에틸아세테이트 190ml으로 재결정하여 상기 화합물 24 (5.27g, 수율: 49%)를 제조하였다.Compound B-1 (8.39g, 17.93mmol), 2-chloro-4-(9,9-dimethyl-9H-fluoren-2-yl)-6-phenyl-1,3, in a 500ml round bottom flask in a nitrogen atmosphere After completely dissolving 5-triazine (5.97g, 15.59mmol) in 240 mL of tetrahydrofuran, 2M aqueous potassium carbonate solution (120 mL) was added, and tetrakis-(triphenylphosphine)palladium (0.54 g, 0.47 mmol) was added. After adding, the mixture was heated and stirred for 3 hours. After lowering the temperature to room temperature and filtering to remove the base, THF was completely concentrated under reduced pressure and recrystallized with 190 ml of ethyl acetate to prepare Compound 24 (5.27 g, yield: 49%).
MS[M+H]+= 690MS[M+H] + = 690
제조예Manufacturing example 25 (화합물 25의 제조) 25 (Preparation of compound 25)
질소 분위기에서 500ml 둥근 바닥 플라스크에 화합물 A-1 (7.15g, 13.88mmol), N-([1,1'-biphenyl]-4-yl)-N-(4-bromophenyl)-9,9-dimethyl-9H-fluoren-2-amine (5.49g, 15.97mmol)을 테트라하이드로퓨란 240 mL에 완전히 녹인 후 2M 탄산칼륨수용액(120 mL)을 첨가하고, 테트라키스-(트리페닐포스핀)팔라듐(0.48 g, 0.42 mmol)을 넣은 후 3시간 동안 가열 교반하였다. 상온으로 온도를 낮추고 필터링(filtering)하여 베이스(base)를 제거한 후에 THF을 완전히 감압농축하고 에틸아세테이트 190ml으로 재결정하여 상기 화합물 25 (5.27g, 수율: 49%)를 제조하였다.Compound A-1 (7.15g, 13.88mmol), N-([1,1'-biphenyl]-4-yl)-N-(4-bromophenyl)-9,9-dimethyl in a 500ml round bottom flask in a nitrogen atmosphere. -9H-fluoren-2-amine (5.49g, 15.97mmol) was completely dissolved in 240 mL of tetrahydrofuran, 2M aqueous potassium carbonate solution (120 mL) was added, and tetrakis-(triphenylphosphine)palladium (0.48 g) , 0.42 mmol) was added, followed by heating and stirring for 3 hours. After lowering the temperature to room temperature and filtering the base to remove the base, THF was completely concentrated under reduced pressure and recrystallized with 190 ml of ethyl acetate to prepare the compound 25 (5.27 g, yield: 49%).
MS[M+H]+= 654MS[M+H] + = 654
제조예Manufacturing example 26 (화합물 26의 제조) 26 (Preparation of compound 26)
질소 분위기에서 500ml 둥근 바닥 플라스크에 화합물 C-1 (10.30g, 22.11mmol), 4-bromo-N,N-diphenylaniline (6.21g, 19.23mmol)을 테트라하이드로퓨란 240 mL에 완전히 녹인 후 2M 탄산칼륨수용액(120 mL)을 첨가하고, 테트라키스-(트리페닐포스핀)팔라듐(0.67 g, 0.58 mmol)을 넣은 후 3시간 동안 가열 교반하였다. 상온으로 온도를 낮추고 필터링(filtering)하여 베이스(base)를 제거한 후에 THF을 완전히 감압농축하고 에틸아세테이트 210ml으로 재결정하여 상기 화합물 26 (6.84g, 수율: 61%)를 제조하였다.Compound C-1 (10.30g, 22.11mmol), 4-bromo-N,N-diphenylaniline (6.21g, 19.23mmol) was completely dissolved in 240 mL of tetrahydrofuran in a 500 ml round bottom flask in a nitrogen atmosphere, and then 2M aqueous potassium carbonate solution (120 mL) was added, tetrakis-(triphenylphosphine)palladium (0.67 g, 0.58 mmol) was added, followed by heating and stirring for 3 hours. After lowering the temperature to room temperature and filtering the base to remove the base, THF was completely concentrated under reduced pressure and recrystallized with 210 ml of ethyl acetate to prepare the compound 26 (6.84 g, yield: 61%).
MS[M+H]+= 584MS[M+H] + = 584
제조예Manufacturing example 27 (화합물 27의 제조) 27 (Preparation of compound 27)
질소 분위기에서 500ml 둥근 바닥 플라스크에 화합물 A-1 (10.14g, 19.54mmol), N-([1,1'-biphenyl]-4-yl)-N-(4-bromophenyl)-9,9-dimethyl-9H-fluoren-2-amine (7.73g, 22.47mmol)을 테트라하이드로퓨란 240 mL에 완전히 녹인 후 2M 탄산칼륨수용액(120 mL)을 첨가하고, 테트라키스-(트리페닐포스핀)팔라듐(0.68 g, 0.59 mmol)을 넣은 후 5시간 동안 가열 교반하였다. 상온으로 온도를 낮추고 필터링(filtering)하여 베이스(base)를 제거한 후에 THF을 완전히 감압농축하고 에틸아세테이트 220ml으로 재결정하여 상기 화합물 27 (6.96g, 수율: 54%)를 제조하였다.Compound A-1 (10.14g, 19.54mmol), N-([1,1'-biphenyl]-4-yl)-N-(4-bromophenyl)-9,9-dimethyl in a 500ml round bottom flask in a nitrogen atmosphere. -9H-fluoren-2-amine (7.73g, 22.47mmol) was completely dissolved in 240 mL of tetrahydrofuran, and 2M aqueous potassium carbonate solution (120 mL) was added, and tetrakis-(triphenylphosphine)palladium (0.68 g) , 0.59 mmol) was added, followed by heating and stirring for 5 hours. After lowering the temperature to room temperature and filtering to remove the base, THF was completely concentrated under reduced pressure and recrystallized with 220 ml of ethyl acetate to prepare Compound 27 (6.96 g, yield: 54%).
MS[M+H]+= 658MS[M+H] + = 658
제조예Manufacturing example 28 (화합물 28의 제조) 28 (Preparation of compound 28)
질소 분위기에서 500ml 둥근 바닥 플라스크에 화합물 C-1 (10.46g, 22.45mmol), 4'-bromo-N,N-diphenyl-[1,1'-biphenyl]-4-amine (7.79g, 19.52mmol)을 테트라하이드로퓨란 240 mL에 완전히 녹인 후 2M 탄산칼륨수용액(120 mL)을 첨가하고, 테트라키스-(트리페닐포스핀)팔라듐(0.68 g, 0.59 mmol)을 넣은 후 3시간 동안 가열 교반하였다. 상온으로 온도를 낮추고 필터링(filtering)하여 베이스(base)를 제거한 후에 THF을 완전히 감압농축하고 에틸아세테이트 230ml으로 재결정하여 상기 화합물 28 (6.84g, 수율: 61%)를 제조하였다.Compound C-1 (10.46g, 22.45mmol), 4'-bromo-N,N-diphenyl-[1,1'-biphenyl]-4-amine (7.79g, 19.52mmol) in a 500ml round bottom flask in nitrogen atmosphere Was completely dissolved in 240 mL of tetrahydrofuran, 2M aqueous potassium carbonate solution (120 mL) was added, tetrakis-(triphenylphosphine) palladium (0.68 g, 0.59 mmol) was added, followed by heating and stirring for 3 hours. After lowering the temperature to room temperature and filtering the base to remove the base, THF was completely concentrated under reduced pressure and recrystallized with 230 ml of ethyl acetate to prepare compound 28 (6.84 g, yield: 61%).
MS[M+H]+= 660MS[M+H] + = 660
제조예Manufacturing example 29 (화합물 29의 제조) 29 (Preparation of compound 29)
질소 분위기에서 500 mL 둥근 바닥 플라스크에 화합물 C (8.16 g, 19.52 mmol), 및 화합물 di([1,1'-biphenyl]-4-yl)amine (7.21 g, 22.45 mmol)을 Xylene 180 mL에 완전히 녹인 후 NaOtBu(2.44 g, 25.38 mmol)을 첨가하고, Bis(tri-tert-butylphosphine) palladium(0)(0.10g, 0.20 mmol)을 넣은 후 4시간 동안 가열 교반하였다. 상온으로 온도를 낮추고 필터링(filtering)하여 베이스(base)를 제거한 후 Xylene을 감압농축시키고 에틸아세테이트 180 mL으로 재결정하여 제조예 29(5.58 g, 수율: 57%)를 제조하였다.Compound C (8.16 g, 19.52 mmol), and compound di([1,1'-biphenyl]-4-yl)amine (7.21 g, 22.45 mmol) were completely added to 180 mL of Xylene in a 500 mL round bottom flask in a nitrogen atmosphere. After dissolving, NaOtBu (2.44 g, 25.38 mmol) was added, Bis (tri- tert- butylphosphine) palladium (0) (0.10 g, 0.20 mmol) was added, followed by heating and stirring for 4 hours. After lowering the temperature to room temperature and filtering (filtering) to remove the base, Xylene was concentrated under reduced pressure and recrystallized with 180 mL of ethyl acetate to prepare Preparation Example 29 (5.58 g, yield: 57%).
MS[M+H]+= 660MS[M+H] + = 660
제조예Manufacturing example 30 (화합물 30의 제조) 30 (Preparation of compound 30)
질소 분위기에서 500 mL 둥근 바닥 플라스크에 화합물 B (8.29 g, 19.83 mmol), 및 화합물 N-phenyl-[1,1':4',1''-terphenyl]-4-amine (7.32 g, 22.81 mmol)을 Xylene 180 mL에 완전히 녹인 후 NaOtBu(2.48 g, 25.78 mmol)을 첨가하고, Bis(tri-tert-butylphosphine) palladium(0)(0.10g, 0.20 mmol)을 넣은 후 3시간 동안 가열 교반하였다. 상온으로 온도를 낮추고 필터링(filtering)하여 베이스(base)를 제거한 후 Xylene을 감압농축시키고 에틸아세테이트 200 mL으로 재결정하여 제조예 30(6.96 g, 수율: 53%)를 제조하였다.Compound B (8.29 g, 19.83 mmol), and compound N-phenyl-[1,1':4',1''-terphenyl]-4-amine (7.32 g, 22.81 mmol) in a 500 mL round bottom flask in a nitrogen atmosphere ) Was completely dissolved in 180 mL of Xylene, NaOtBu (2.48 g, 25.78 mmol) was added, Bis (tri- tert- butylphosphine) palladium (0) (0.10 g, 0.20 mmol) was added, followed by heating and stirring for 3 hours. After lowering the temperature to room temperature and filtering (filtering) to remove the base, Xylene was concentrated under reduced pressure and recrystallized with 200 mL of ethyl acetate to prepare Preparation Example 30 (6.96 g, yield: 53%).
MS[M+H]+= 662MS[M+H] + = 662
제조예Manufacturing example 31 (화합물 31의 제조) 31 (Preparation of compound 31)
질소 분위기에서 500 mL 둥근 바닥 플라스크에 화합물 A (8.32 g, 28.11 mmol), 및 화합물 N-phenyl-[1,1':4',1''-terphenyl]-4-amine (14.06 g, 32.32 mmol)을 Xylene 180 mL에 완전히 녹인 후 NaOtBu(3.51 g, 36.54 mmol)을 첨가하고, Bis(tri-tert-butylphosphine) palladium(0)(0.14g, 0.28 mmol)을 넣은 후 5시간 동안 가열 교반하였다. 상온으로 온도를 낮추고 필터링(filtering)하여 베이스(base)를 제거한 후 Xylene을 감압농축시키고 테트라하이드로퓨란 270 mL으로 재결정하여 제조예 21(13.27 g, 수율: 72%)를 제조하였다.Compound A (8.32 g, 28.11 mmol), and compound N-phenyl-[1,1':4',1''-terphenyl]-4-amine (14.06 g, 32.32 mmol) in a 500 mL round bottom flask in a nitrogen atmosphere ) Was completely dissolved in 180 mL of Xylene, NaOtBu (3.51 g, 36.54 mmol) was added, Bis (tri- tert- butylphosphine) palladium (0) (0.14 g, 0.28 mmol) was added, followed by heating and stirring for 5 hours. After lowering the temperature to room temperature, filtering the base to remove the base, Xylene was concentrated under reduced pressure, and recrystallized with 270 mL of tetrahydrofuran to prepare Preparation Example 21 (13.27 g, yield: 72%).
MS[M+H]+= 662MS[M+H] + = 662
제조예Manufacturing example 32 (화합물 32의 제조) 32 (Preparation of compound 32)
질소 분위기에서 500 mL 둥근 바닥 플라스크에 화합물 B (7.59 g, 18.07 mmol), 및 화합물 N-([1,1'-biphenyl]-4-yl)-[1,1'-biphenyl]-2-amine (6.67 g, 20.78 mmol)을 Xylene 180 mL에 완전히 녹인 후 NaOtBu(2.26 g, 23.49 mmol)을 첨가하고, Bis(tri-tert-butylphosphine) palladium(0)(0.09g, 0.18 mmol)을 넣은 후 3시간 동안 가열 교반하였다. 상온으로 온도를 낮추고 필터링(filtering)하여 베이스(base)를 제거한 후 Xylene을 감압농축시키고 에틸아세테이트 220 mL으로 재결정하여 제조예 22(6.96 g, 수율: 53%)를 제조하였다.Compound B (7.59 g, 18.07 mmol), and compound N-([1,1'-biphenyl]-4-yl)-[1,1'-biphenyl]-2-amine in a 500 mL round bottom flask in a nitrogen atmosphere. (6.67 g, 20.78 mmol) was completely dissolved in 180 mL of Xylene, NaOtBu (2.26 g, 23.49 mmol) was added, Bis (tri- tert- butylphosphine) palladium (0) (0.09 g, 0.18 mmol) was added, and then 3 Heated and stirred for hours. After lowering the temperature to room temperature and filtering (filtering) to remove the base, Xylene was concentrated under reduced pressure and recrystallized with 220 mL of ethyl acetate to prepare Preparation Example 22 (6.96 g, yield: 53%).
MS[M+H]+= 662MS[M+H] + = 662
제조예Manufacturing example 33 (화합물 33의 제조) 33 (Preparation of compound 33)
질소 분위기에서 500 mL 둥근 바닥 플라스크에 화합물 A (8.32 g, 28.11 mmol), 및 화합물 N-phenyl-[1,1':4',1''-terphenyl]-4-amine (14.06 g, 32.32 mmol)을 Xylene 180 mL에 완전히 녹인 후 NaOtBu(3.51 g, 36.54 mmol)을 첨가하고, Bis(tri-tert-butylphosphine) palladium(0)(0.14g, 0.28 mmol)을 넣은 후 5시간 동안 가열 교반하였다. 상온으로 온도를 낮추고 필터링(filtering)하여 베이스(base)를 제거한 후 Xylene을 감압농축시키고 테트라하이드로퓨란 270 mL으로 재결정하여 제조예 33(13.27 g, 수율: 72%)를 제조하였다.Compound A (8.32 g, 28.11 mmol), and compound N-phenyl-[1,1':4',1''-terphenyl]-4-amine (14.06 g, 32.32 mmol) in a 500 mL round bottom flask in a nitrogen atmosphere ) Was completely dissolved in 180 mL of Xylene, NaOtBu (3.51 g, 36.54 mmol) was added, Bis (tri- tert- butylphosphine) palladium (0) (0.14 g, 0.28 mmol) was added, followed by heating and stirring for 5 hours. After lowering the temperature to room temperature and filtering (filtering) to remove the base, Xylene was concentrated under reduced pressure and recrystallized with 270 mL of tetrahydrofuran to prepare Preparation Example 33 (13.27 g, yield: 72%).
MS[M+H]+= 614MS[M+H] + = 614
제조예Manufacturing example 34 (화합물 34의 제조) 34 (Preparation of compound 34)
질소 분위기에서 500ml 둥근 바닥 플라스크에 화합물 A-1 (5.40g, 15.70mmol), N,N-di([1,1'-biphenyl]-4-yl)-7-bromo-9,9-dimethyl-9H-fluoren-2-amine (8.07g, 13.65mmol)을 테트라하이드로퓨란 240 mL에 완전히 녹인 후 2M 탄산칼륨수용액(120 mL)을 첨가하고, 테트라키스-(트리페닐포스핀)팔라듐(0.47g, 0.41 mmol)을 넣은 후 3시간 동안 가열 교반하였다. 상온으로 온도를 낮추고 필터링(filtering)하여 베이스(base)를 제거한 후에 THF을 완전히 감압농축하고 에틸아세테이트 230ml으로 재결정하여 상기 화합물 34(7.36g, 수율: 74%)를 제조하였다.Compound A-1 (5.40g, 15.70mmol), N,N-di([1,1'-biphenyl]-4-yl)-7-bromo-9,9-dimethyl- in a 500 ml round bottom flask in a nitrogen atmosphere. After completely dissolving 9H-fluoren-2-amine (8.07g, 13.65mmol) in 240 mL of tetrahydrofuran, 2M aqueous potassium carbonate solution (120 mL) was added, and tetrakis-(triphenylphosphine)palladium (0.47g, 0.41 mmol) was added, followed by heating and stirring for 3 hours. After lowering the temperature to room temperature and filtering (filtering) to remove the base, THF was completely concentrated under reduced pressure and recrystallized with 230 ml of ethyl acetate to prepare the compound 34 (7.36 g, yield: 74%).
MS[M+H]+= 730MS[M+H] + = 730
제조예Manufacturing example 35 (화합물 35의 제조) 35 (Preparation of compound 35)
질소 분위기에서 500 mL 둥근 바닥 플라스크에 화합물 E (8.46 g, 17.06 mmol), 및 화합물 di([1,1'-biphenyl]-4-yl)amine (5.20 g, 16.20 mmol)을 Xylene 180 mL에 완전히 녹인 후 NaOtBu(2.46 g, 25.58 mmol)을 첨가하고, Bis(tri-tert-butylphosphine) palladium(0)(0.10g, 0.20 mmol)을 넣은 후 4시간 동안 가열 교반하였다. 상온으로 온도를 낮추고 필터링(filtering)하여 베이스(base)를 제거한 후 Xylene을 감압농축시키고 에틸아세테이트 180 mL으로 재결정하여 제조예 35(6.95 g, 수율: 57%)를 제조하였다.Compound E (8.46 g, 17.06 mmol), and compound di([1,1'-biphenyl]-4-yl)amine (5.20 g, 16.20 mmol) were completely added to 180 mL of Xylene in a 500 mL round bottom flask in a nitrogen atmosphere. After dissolving, NaOtBu (2.46 g, 25.58 mmol) was added, Bis (tri- tert- butylphosphine) palladium (0) (0.10 g, 0.20 mmol) was added, followed by heating and stirring for 4 hours. After lowering the temperature to room temperature and filtering (filtering) to remove the base, Xylene was concentrated under reduced pressure and recrystallized with 180 mL of ethyl acetate to prepare Preparation Example 35 (6.95 g, yield: 57%).
MS[M+H]+= 738MS[M+H] + = 738
제조예Manufacturing example 36 (화합물 36의 제조) 36 (Preparation of compound 36)
질소 분위기에서 500 mL 둥근 바닥 플라스크에 화합물 E (7.52 g, 15.16 mmol), 및 화합물 N-([1,1'-biphenyl]-4-yl)-9,9-dimethyl-9H-fluoren-2-amine (5.20 g, 14.40 mmol)을 Xylene 180 mL에 완전히 녹인 후 NaOtBu(2.46 g, 25.58 mmol)을 첨가하고, Bis(tri-tert-butylphosphine) palladium(0)(0.15g, 0.30 mmol)을 넣은 후 4시간 동안 가열 교반하였다. 상온으로 온도를 낮추고 필터링(filtering)하여 베이스(base)를 제거한 후 Xylene을 감압농축시키고 에틸아세테이트 220 mL으로 재결정하여 제조예 36(7.13 g, 수율: 61%)를 제조하였다.Compound E (7.52 g, 15.16 mmol), and compound N-([1,1'-biphenyl]-4-yl)-9,9-dimethyl-9H-fluoren-2- in a 500 mL round bottom flask in a nitrogen atmosphere. After completely dissolving amine (5.20 g, 14.40 mmol) in 180 mL of Xylene, NaOtBu (2.46 g, 25.58 mmol) was added, and Bis (tri- tert- butylphosphine) palladium (0) (0.15 g, 0.30 mmol) was added. Heated and stirred for 4 hours. After lowering the temperature to room temperature and filtering (filtering) to remove the base, Xylene was concentrated under reduced pressure and recrystallized with 220 mL of ethyl acetate to prepare Preparation Example 36 (7.13 g, yield: 61%).
MS[M+H]+= 778MS[M+H] + = 778
제조예Manufacturing example 37 (화합물 37의 제조) 37 (Preparation of compound 37)
질소 분위기에서 500 mL 둥근 바닥 플라스크에 화합물 D (6.94 g, 15.49 mmol), 및 화합물 di([1,1'-biphenyl]-4-yl)amine (4.72 g, 14.72 mmol)을 Xylene 180 mL에 완전히 녹인 후 NaOtBu(2.23 g, 23.24 mmol)을 첨가하고, Bis(tri-tert-butylphosphine) palladium(0)(0.60g, 0.57 mmol)을 넣은 후 5시간 동안 가열 교반하였다. 상온으로 온도를 낮추고 필터링(filtering)하여 베이스(base)를 제거한 후 Xylene을 감압농축시키고 에틸아세테이트 210 mL으로 재결정하여 제조예 37(7.72 g, 수율: 72%)를 제조하였다.Compound D (6.94 g, 15.49 mmol), and compound di([1,1'-biphenyl]-4-yl)amine (4.72 g, 14.72 mmol) were completely added to 180 mL of Xylene in a 500 mL round bottom flask in a nitrogen atmosphere. After dissolving, NaOtBu (2.23 g, 23.24 mmol) was added, Bis (tri- tert- butylphosphine) palladium (0) (0.60 g, 0.57 mmol) was added, followed by heating and stirring for 5 hours. After lowering the temperature to room temperature, filtering the base to remove the base, Xylene was concentrated under reduced pressure and recrystallized with 210 mL of ethyl acetate to prepare Preparation Example 37 (7.72 g, yield: 72%).
MS[M+H]+= 690MS[M+H] + = 690
제조예Manufacturing example 38 (화합물 38의 제조) 38 (Preparation of compound 38)
질소 분위기에서 500ml 둥근 바닥 플라스크에 화합물 F-1 (9.63g, 17.76mmol), 4-bromo-N,N-diphenylaniline (8.88g, 18.69mmol)을 테트라하이드로퓨란 240 mL에 완전히 녹인 후 2M 탄산칼륨수용액(120 mL)을 첨가하고, 테트라키스-(트리페닐포스핀)팔라듐(0.65 g, 0.56 mmol)을 넣은 후 3시간 동안 가열 교반하였다. 상온으로 온도를 낮추고 필터링(filtering)하여 베이스(base)를 제거한 후에 THF을 완전히 감압농축하고 에틸아세테이트 260ml으로 재결정하여 상기 화합물 38 (10.25g, 수율: 68%)를 제조하였다.Compound F-1 (9.63g, 17.76mmol), 4-bromo-N,N-diphenylaniline (8.88g, 18.69mmol) was completely dissolved in 240 mL of tetrahydrofuran in a 500 ml round bottom flask in a nitrogen atmosphere, and then 2M aqueous potassium carbonate solution (120 mL) was added, tetrakis-(triphenylphosphine)palladium (0.65 g, 0.56 mmol) was added, followed by heating and stirring for 3 hours. After lowering the temperature to room temperature and filtering the base to remove the base, THF was completely concentrated under reduced pressure and recrystallized with 260 ml of ethyl acetate to prepare the compound 38 (10.25 g, yield: 68%).
MS[M+H]+= 825MS[M+H] + = 825
제조예Manufacturing example 39 (화합물 39의 제조) 39 (Preparation of compound 39)
질소 분위기에서 500ml 둥근 바닥 플라스크에 화합물 D-1 (9.63g, 17.76mmol), N-([1,1'-biphenyl]-4-yl)-N-(4-bromophenyl)-[1,1'-biphenyl]-4-amine (8.88g, 18.69mmol)을 테트라하이드로퓨란 240 mL에 완전히 녹인 후 2M 탄산칼륨수용액(120 mL)을 첨가하고, 테트라키스-(트리페닐포스핀)팔라듐(0.65 g, 0.56 mmol)을 넣은 후 3시간 동안 가열 교반하였다. 상온으로 온도를 낮추고 필터링(filtering)하여 베이스(base)를 제거한 후에 THF을 완전히 감압농축하고 에틸아세테이트 260ml으로 재결정하여 상기 화합물 39 (10.25g, 수율: 68%)를 제조하였다.Compound D-1 (9.63g, 17.76mmol), N-([1,1'-biphenyl]-4-yl)-N-(4-bromophenyl)-[1,1' in a 500 ml round bottom flask in a nitrogen atmosphere. -biphenyl]-4-amine (8.88g, 18.69mmol) was completely dissolved in 240 mL of tetrahydrofuran, and then 2M aqueous potassium carbonate solution (120 mL) was added, and tetrakis-(triphenylphosphine)palladium (0.65 g, 0.56 mmol) was added, followed by heating and stirring for 3 hours. After lowering the temperature to room temperature and filtering the base to remove the base, THF was completely concentrated under reduced pressure and recrystallized with 260 ml of ethyl acetate to prepare the compound 39 (10.25 g, yield: 68%).
MS[M+H]+= 766MS[M+H] + = 766
<< 전자억제층Electron suppression layer 적용예Application example >>
이하의 참고예 1-1 내지 1-16에서는, 제조예 24 내지 39의 각 화합물을 유기 발광 소자의 전자억제층에 적용하고, 그에 따른 효과를 확인하였다.In Reference Examples 1-1 to 1-16 below, each of the compounds of Preparation Examples 24 to 39 was applied to an electron suppressing layer of an organic light-emitting device, and the effects thereof were confirmed.
비교예Comparative example 1-1 1-1
ITO(indium tin oxide)가 1,000Å의 두께로 박막 코팅된 유리 기판을 세제를 녹인 증류수에 넣고 초음파로 세척하였다. 이때, 세제로는 피셔사(Fischer Co.) 제품을 사용하였으며, 증류수로는 밀러포어사(Millipore Co.) 제품의 필터(Filter)로 2차로 걸러진 증류수를 사용하였다. ITO를 30분간 세척한 후 증류수로 2회 반복하여 초음파 세척을 10분간 진행하였다. 증류수 세척이 끝난 후, 이소프로필알콜, 아세톤, 메탄올의 용제로 초음파 세척을 하고 건조시킨 후 플라즈마 세정기로 수송시켰다. 또한, 산소 플라즈마를 이용하여 상기 기판을 5분간 세정한 후 진공 증착기로 기판을 수송시켰다.A glass substrate coated with a thin film of ITO (indium tin oxide) to a thickness of 1,000Å was put in distilled water dissolved in a detergent and washed with ultrasonic waves. At this time, a product made by Fischer Co. was used as a detergent, and distilled water secondarily filtered with a filter manufactured by Millipore Co. was used as distilled water. After washing the ITO for 30 minutes, it was repeated twice with distilled water to perform ultrasonic cleaning for 10 minutes. After washing with distilled water, ultrasonic washing was performed with a solvent of isopropyl alcohol, acetone, and methanol, dried, and then transported to a plasma cleaner. In addition, after cleaning the substrate for 5 minutes using oxygen plasma, the substrate was transported to a vacuum evaporator.
이렇게 준비된 ITO 투명 전극 위에 하기 화학식 HAT로 표시되는 화합물을 50Å의 두께로 열 진공 증착하여 정공주입층을 형성하였다. 상기 정공주입층 위에 하기 화학식 HT1으로 표시되는 화합물(1300Å)을 진공 증착하여 정공수송층을 형성하였다. 이어서, 상기 정공수송층 위에 막 두께 150Å으로 EB1을 형성하였다. 이어서, 상기 전자억제층 위에 막 두께 200Å으로 하기 화학식 BH로 표시되는 화합물 및 하기 화학식 BD로 표시되는 화합물을 25:1의 중량비로 진공증착하여 발광층을 형성하였다. 상기 발광층 위에 막 두께 50Å으로 하기 화학식 HB1으로 표시되는 화합물을 진공 증착하여 정공저지층을 형성하였다. 이어서, 상기 정공저지층 위에 하기 화학식 ET1으로 표시되는 화합물과 하기 화학식 LiQ로 표시되는 화합물을 1:1의 중량비로 진공증착하여 310Å의 두께로 전자 주입 및 수송층을 형성하였다. 상기 전자 주입 및 수송층 위에 순차적으로 12Å두께로 리튬플로라이드(LiF)와 1,000Å 두께로 알루미늄을 증착하여 음극을 형성하였다. On the thus prepared ITO transparent electrode, a compound represented by the following formula HAT was thermally vacuum deposited to a thickness of 50Å to form a hole injection layer. A hole transport layer was formed by vacuum depositing a compound (1300Å) represented by the following formula HT1 on the hole injection layer. Subsequently, EB1 was formed on the hole transport layer with a thickness of 150Å. Then, a compound represented by the following formula BH and a compound represented by the following formula BD with a film thickness of 200Å were vacuum-deposited at a weight ratio of 25:1 to form a light emitting layer. A hole blocking layer was formed by vacuum depositing a compound represented by the following Chemical Formula HB1 with a film thickness of 50Å on the emission layer. Subsequently, a compound represented by the following formula ET1 and a compound represented by the following formula LiQ were vacuum-deposited at a weight ratio of 1:1 on the hole blocking layer to form an electron injection and transport layer with a thickness of 310Å. Lithium fluoride (LiF) at a thickness of 12Å and aluminum at a thickness of 1,000Å were sequentially deposited on the electron injection and transport layer to form a negative electrode.
상기의 과정에서 유기물의 증착속도는 0.4~0.7Å/sec를 유지하였고, 음극의 리튬플로라이드는 0.3Å/sec, 알루미늄은 2Å/sec의 증착 속도를 유지하였으며, 증착시 진공도는 2ⅹ10-7 ~ 5ⅹ10-6 torr를 유지하여, 유기 발광 소자를 제작하였다.In the above process, the deposition rate of organic matter was maintained at 0.4~0.7Å/sec, the deposition rate of lithium fluoride at the cathode was 0.3Å/sec, and the deposition rate of aluminum was 2Å/sec, and the vacuum degree during deposition was 2×10 -7 ~ An organic light emitting device was manufactured by maintaining 5x10 -6 torr.
비교예Comparative example 1-2 내지 1-3 1-2 to 1-3
전자억제층 형성에 있어서 EB1 대신 하기 표 1에 기재된 화합물을 사용하는 것을 제외하고는, 상기 비교예 1-1과 동일한 방법으로 유기 발광 소자를 제조하였다. 하기 표 1에서 사용한 EB2, EB3 의 화합물을 하기와 같다. An organic light-emitting device was manufactured in the same manner as in Comparative Example 1-1, except that the compound shown in Table 1 below was used instead of EB1 in forming the electron suppressing layer. The compounds of EB2 and EB3 used in Table 1 are as follows.
참고예 1-1 내지 참고예 1-16Reference Example 1-1 to Reference Example 1-16
전자억제층 형성에 있어서 EB1 대신 하기 표 1에 기재된 화합물을 사용하는 것을 제외하고는, 상기 비교예 1-1과 동일한 방법으로 유기 발광 소자를 제조하였다. An organic light-emitting device was manufactured in the same manner as in Comparative Example 1-1, except that the compound shown in Table 1 below was used instead of EB1 in forming the electron suppressing layer.
실험예Experimental example 1 One
상기 참고예 및 비교예에서 제조한 유기 발광 소자에 전류를 인가하였을 때, 전압, 효율, 색좌표 및 수명을 측정하고 그 결과를 하기 표 1에 나타내었다. T95은 휘도가 초기 휘도(1300 nit)에서 95%로 감소되는데 소요되는 시간을 의미한다.When current was applied to the organic light-emitting devices prepared in the Reference Examples and Comparative Examples, voltage, efficiency, color coordinates, and lifetime were measured, and the results are shown in Table 1 below. T95 refers to the time it takes for the luminance to decrease from the initial luminance (1300 nit) to 95%.
(전자억제층)compound
(Electronic suppression layer)
(V@10mA
/cm2)Voltage
(V@10mA
/cm 2 )
(cd/A@10mA
/cm2)efficiency
(cd/A@10mA
/cm 2 )
(x,y)Color coordinates
(x,y)
(hr)T95
(hr)
상기 표 1에서, 상기 참고예 1-1 내지 1-16은, 유기 발광 소자의 효율, 구동 전압 및 안정성 면에서 우수한 특성을 나타냄을 알 수 있다. 그에 반면, 상기 표 1에서, 상기 비교예 1-1 내지 1-3은, 상기 참고예 1 내지 1-16에 대비하여, 유기 발광 소자의 전압이 8~10% 증가하고, 효율이 5~10% 감소하며, 수명은 크게 떨어지는 결과를 보였다.In Table 1, it can be seen that the Reference Examples 1-1 to 1-16 exhibit excellent characteristics in terms of efficiency, driving voltage, and stability of the organic light-emitting device. On the other hand, in Table 1, in Comparative Examples 1-1 to 1-3, compared to Reference Examples 1 to 1-16, the voltage of the organic light-emitting device was increased by 8 to 10%, and the efficiency was 5 to 10. % Decreased, and the lifespan decreased significantly.
구체적으로, 상기 참고예 1-1 내지 1-16은, 전술한 화학식 1로 표시되는 제조예 24 내지 39 화합물을 전자억제층에 적용한 것이다. 그에 반면, 상기 비교예 1-2 화합물은, 전술한 화학식 1로 표시되는 화합물에 있어서, 코어(즉, 사이클로펜타페난트렌)의 중심 벤젠 고리에 있어서 2번과 6번 위치에 아릴아민기가 치환된 것이다. 한편, 상기 비교예 1-2 화합물은, 상기 코어의 2번 위치에 아릴아민기가 치환된 것이다. Specifically, Reference Examples 1-1 to 1-16 are obtained by applying the compounds of Preparation Examples 24 to 39 represented by
이로부터, 상기 화학식 1로 표시되는 화합물은, 그 사이클로펜타페난트렌 중심 벤젠고리에 있어서 가장 반응성이 높은 위치 치환기가 연결(4번 및 5번 중 어느 하나의 위치 치환, 또는 두 위치 동시 치환)된 것으로, 우수한 안정성을 가져, 전자억제층에 적용될 경우 유기 발광 소자가 안정적으로 구동되게끔 하는 것으로 추론된다. From this, in the compound represented by
나아가, 상기 화학식 1로 표시되는 화합물은, 상기 참고예 1-1 내지 1-16과 같이 유기 발광 소자의 전자억제층에 적용할 경우, 저전압, 고효율 구현에 기여함을 알 수 있다.Further, it can be seen that when the compound represented by
<< 정공수송층Hole transport layer 적용예Application example >>
이하의 참고예 2-1 내지 2-16에서는, 제조예 24 내지 39의 각 화합물을 기 발광 소자의 정공수송층에 적용하고, 그에 따른 효과를 확인하였다.In the following Reference Examples 2-1 to 2-16, each of the compounds of Preparation Examples 24 to 39 was applied to the hole transport layer of the light emitting device, and the effects thereof were confirmed.
비교예Comparative example 2-1 및 2-2 2-1 and 2-2
정공수송층 형성에 있어서 HT1 대신 하기 표 2에 기재된 화합물을 사용한 것을 제외하고는, 상기 비교예 1-1과 동일한 방법으로 유기 발광 소자를 제작하였다. 하기 표 2에서, HT2 및 HT3으로 표시되는 화합물은 하기와 같다. An organic light-emitting device was manufactured in the same manner as in Comparative Example 1-1, except that the compound shown in Table 2 below was used instead of HT1 in forming the hole transport layer. In Table 2 below, compounds represented by HT2 and HT3 are as follows.
참고예 2-1 내지 2-16Reference Examples 2-1 to 2-16
정공수송층 형성에 있어서 HT1 대신 하기 표 2에 기재된 화합물을 사용하고 전자억제층으로 EB1으로 사용한 것을 제외하고는, 상기 비교예 1-1과 동일한 방법으로 유기 발광 소자를 제작하였다.In forming the hole transport layer, an organic light emitting diode was manufactured in the same manner as in Comparative Example 1-1, except that the compound shown in Table 2 was used instead of HT1 and EB1 was used as the electron suppressing layer.
실험예Experimental example 2 2
상기 참고예 및 비교예에서 제조한 유기 발광 소자에 전류를 인가하였을 때, 전압, 효율, 색좌표 및 수명을 측정하고 그 결과를 하기 표 2에 나타내었다. T95은 휘도가 초기 휘도(1300 nit)에서 95%로 감소되는데 소요되는 시간을 의미한다. When a current was applied to the organic light emitting device prepared in the Reference Example and Comparative Example, voltage, efficiency, color coordinates, and lifetime were measured, and the results are shown in Table 2 below. T95 refers to the time it takes for the luminance to decrease from the initial luminance (1300 nit) to 95%.
(정공수송층)compound
(Hole transport layer)
(V@10mA
/cm2)Voltage
(V@10mA
/cm 2 )
(cd/A@10mA
/cm2)efficiency
(cd/A@10mA
/cm 2 )
(x,y)Color coordinates
(x,y)
(hr)T95
(hr)
상기 표 2에서, 참고예 2-1 내지 2-16은, 유기 발광 소자의 효율, 구동 전압 및 안정성 면에서 우수한 특성을 나타냄을 알 수 있다. 그에 반면, 상기 비교예 2-1 및 2-1은, 상기 참고예 2-1 내지 2-16에 대비하여, 유기 발광 소자의 전압이 8~10% 증가하고, 효율이 5~10% 감소하며, 수명은 크게 떨어지는 결과를 보였다. In Table 2, it can be seen that Reference Examples 2-1 to 2-16 exhibit excellent characteristics in terms of efficiency, driving voltage, and stability of the organic light-emitting device. On the other hand, in Comparative Examples 2-1 and 2-1, compared to the Reference Examples 2-1 to 2-16, the voltage of the organic light emitting device was increased by 8-10%, and the efficiency was decreased by 5-10%. , The lifespan was significantly reduced.
구체적으로, 상기 참고예 2-1 내지 2-16은, 전술한 화학식 1로 표시되는 제조예 24 내지 39 화합물을 정공수송층에 적용한 것이다. 이로부터, 상기 화학식 1로 표시되는 화합물은, 그 사이클로펜타페난트렌 중심 벤젠고리에 있어서 가장 반응성이 높은 위치 치환기가 연결(4번 및 5번 중 어느 하나의 위치 치환, 또는 두 위치 동시 치환)된 것으로, 우수한 안정성을 가져, 정공수송층에 적용될 경우 유기 발광 소자가 안정적으로 구동되게끔 하는 것으로 추론된다.Specifically, Reference Examples 2-1 to 2-16 are obtained by applying the compounds of Preparation Examples 24 to 39 represented by
나아가, 상기 화학식 1로 표시되는 화합물은, 상기 참고예 2-1 내지 2-16과 같이 유기 발광 소자의 정공수송층에 적용할 경우, 저전압, 고효율 구현에 기여함을 알 수 있다.Further, it can be seen that when the compound represented by
<< 정공차단층Hole blocking layer 적용예Application example >>
이하의 실시예 3-1 내지 3-13에서는, 제조예 1, 2, 7 내지 10, 12 내지 15, 및 18 내지 20의 각 화합물을 상기 발광 소자의 정공차단층에 적용하고, 그에 따른 효과를 확인하였다.In Examples 3-1 to 3-13 below, each of the compounds of Preparation Examples 1, 2, 7 to 10, 12 to 15, and 18 to 20 was applied to the hole blocking layer of the light-emitting device, and the effects thereof were Confirmed.
비교예Comparative example 3-1 3-1
ITO(indium tin oxide)가 1,000Å의 두께로 박막 코팅된 유리 기판을 세제를 녹인 증류수에 넣고 초음파로 세척하였다. 이 때, 세제로는 피셔사(Fischer Co.) 제품을 사용하였으며, 증류수로는 밀러포어사(Millipore Co.) 제품의 필터(Filter)로 2차로 걸러진 증류수를 사용하였다. ITO를 30분간 세척한 후 증류수로 2회 반복하여 초음파 세척을 10분간 진행하였다. 증류수 세척이 끝난 후, 이소프로필알콜, 아세톤, 메탄올의 용제로 초음파 세척을 하고 건조시킨 후 플라즈마 세정기로 수송시켰다. 또한, 산소 플라즈마를 이용하여 상기 기판을 5분간 세정한 후 진공 증착기로 기판을 수송시켰다.A glass substrate coated with a thin film of ITO (indium tin oxide) to a thickness of 1,000Å was put in distilled water dissolved in a detergent and washed with ultrasonic waves. At this time, Fischer Co. product was used as a detergent, and distilled water secondarily filtered with a filter made by Millipore Co. was used as distilled water. After washing the ITO for 30 minutes, it was repeated twice with distilled water to perform ultrasonic cleaning for 10 minutes. After washing with distilled water, ultrasonic washing was performed with a solvent of isopropyl alcohol, acetone, and methanol, dried, and then transported to a plasma cleaner. In addition, after cleaning the substrate for 5 minutes using oxygen plasma, the substrate was transported to a vacuum evaporator.
이렇게 준비된 ITO 투명 전극 위에 하기 화학식의 헥사니트릴 헥사아자트리페닐렌 (hexaazatriphenylene; HAT)를 50Å의 두께로 열 진공 증착하여 정공 주입층을 형성하였다. On the thus prepared ITO transparent electrode, hexaazatriphenylene (HAT) of the following formula was thermally vacuum deposited to a thickness of 50Å to form a hole injection layer.
[HAT][HAT]
상기 정공주입층 위에 정공을 수송하는 물질인 하기 화합물 4,4'-(9-phenyl-9H-carbazole-3,6-diyl)bis(N,N-diphenylaniline) [HT 4](1150Å)를 진공 증착하여 정공수송층을 형성하였다. The following
[HT 4][HT 4]
이어서, 상기 정공수송층 위에 막 두께 100Å으로 하기 화합물 [EB 4]를 진공 증착하여 전자저지층을 형성하였다.Subsequently, the following compound [EB 4] with a film thickness of 100Å was vacuum deposited on the hole transport layer to form an electron blocking layer.
[EB 4][EB 4]
이어서, 상기 전자저지층 위에 막 두께 200Å으로 아래와 같은 BH와 BD를 25:1의 중량비로 진공증착하여 발광층을 형성하였다. Subsequently, a light emitting layer was formed by vacuum depositing the following BH and BD at a weight ratio of 25:1 with a thickness of 200Å on the electron blocking layer.
[BH] [BH]
[BD][BD]
[HB 2] [HB 2]
[ET 2][ET 2]
[LiQ][LiQ]
상기 발광층 위에 상기 정공수송층 위에 막 두께 50Å으로 상기 화합물 HB 2를 진공 증착하여 정공저지층(정공차단층)을 형성하였다.The
이어서, 상기 정공저지층 위에 화합물 ET 2과 상기 화합물 LiQ(Lithium Quinolate)를 1:1의 중량비로 진공증착하여 310Å의 두께로 전자 주입 및 수송층을 형성하였다. 상기 전자 주입 및 수송층 위에 순차적으로 12Å두께로 리튬플로라이드(LiF)와 1,000Å 두께로 알루미늄을 증착하여 음극을 형성하였다. Subsequently, the
상기의 과정에서 유기물의 증착속도는 0.4~ 0.7Å/sec를 유지하였고, 음극의 리튬플로라이드는 0.3Å/sec, 알루미늄은 2Å/sec의 증착 속도를 유지하였으며, 증착시 진공도는 2 ⅹ10-7 ~5 ⅹ10-6 torr를 유지하여, 유기 발광 소자를 제작하였다.In the above process, the deposition rate of organic materials was maintained at 0.4 ~ 0.7Å/sec, the deposition rate of lithium fluoride at the cathode was 0.3Å/sec, and the deposition rate of aluminum was 2Å/sec, and the vacuum degree during deposition was 2×10 -7. An organic light emitting device was manufactured by maintaining ~5 x10 -6 torr.
비교예Comparative example 3-1 및 3-2 3-1 and 3-2
정공차단층 형성에 있어서 HB2 대신 하기 표 3에 기재된 화합물을 사용한 것을 제외하고는, 상기 비교예 3-1과 동일한 방법으로 유기 발광 소자를 제작하였다. 하기 표 3에서, HB3 및 HB4으로 표시되는 화합물은 하기와 같다. An organic light-emitting device was manufactured in the same manner as in Comparative Example 3-1, except that the compound shown in Table 3 below was used instead of HB2 in forming the hole blocking layer. In Table 3 below, compounds represented by HB3 and HB4 are as follows.
실시예Example 3-1 내지 3-13 3-1 to 3-13
정공차단층 형성에 있어서 HB2 대신 하기 표 3에 기재된 화합물을 사용한 것을 제외하고는, 상기 비교예 3-1과 동일한 방법으로 유기 발광 소자를 제작하였다.An organic light-emitting device was manufactured in the same manner as in Comparative Example 3-1, except that the compound shown in Table 3 below was used instead of HB2 in forming the hole blocking layer.
실험예Experimental example 3 3
실시예 3-1 내지 13, 비교예 3-1 내지 3-3 에 의해 제작된 유기 발광 소자에 전류를 인가하였을 때, 전압, 효율, 색좌표 및 수명을 측정하고 그 결과를 하기 [표 3]에 나타내었다. T95은 휘도가 초기휘도(1300nit)에서 95%로 감소되는데 소요되는 시간을 의미한다.When a current was applied to the organic light emitting devices manufactured according to Examples 3-1 to 13 and Comparative Examples 3-1 to 3-3, voltage, efficiency, color coordinates, and lifetime were measured, and the results are shown in Table 3 below. Indicated. T95 refers to the time it takes for the luminance to decrease from the initial luminance (1300nit) to 95%.
(정공차단층)compound
(Hole Blocking Layer)
(V@10Ma
/cm2)Voltage
(V@10Ma
/cm 2 )
(cd/A@10mA
/cm2)efficiency
(cd/A@10mA
/cm 2 )
(x,y)Color coordinates
(x,y)
(hr)T95
(hr)
상기 표 3에서, 상기 실시예 3-1 내지 3-13은, 유기 발광 소자의 효율, 구동 전압 및 안정성 면에서 우수한 특성을 나타냄을 알 수 있다. 그에 반면, 상기 표 3에서, 상기 비교예 3-1 내지 3-3은, 상기 실시예3, 실시예 3-1 내지 3-13에 대비하여, 유기 발광 소자의 전압이 8~10% 증가하고, 효율이 5~10% 감소하며, 수명은 크게 떨어지는 결과를 보였다.In Table 3, it can be seen that Examples 3-1 to 3-13 exhibit excellent characteristics in terms of efficiency, driving voltage, and stability of the organic light-emitting device. On the other hand, in Table 3, in Comparative Examples 3-1 to 3-3, compared to Example 3 and Examples 3-1 to 3-13, the voltage of the organic light emitting device was increased by 8 to 10%, and , The efficiency was reduced by 5-10%, and the lifespan was significantly reduced.
구체적으로, 상기 실시예 3-1 내지 3-13은, 전술한 화학식 1로 표시되는 제조예 1, 2, 7 내지 10, 12 내지 15, 및 18 내지 20 화합물을 정공차단층에 적용한 것이다. 이로부터, 상기 화학식 1로 표시되는 화합물은, 그 사이클로펜타페난트렌 중심 벤젠고리에 있어서 가장 반응성이 높은 위치 치환기가 연결(4번 및 5번 중 어느 하나의 위치 치환, 또는 두 위치 동시 치환)된 것으로, 우수한 안정성을 가져, 정공차단층에 적용될 경우 유기 발광 소자가 안정적으로 구동되게끔 하는 것으로 추론된다.Specifically, Examples 3-1 to 3-13 are obtained by applying the compounds of Preparation Examples 1, 2, 7 to 10, 12 to 15, and 18 to 20 represented by
나아가, 상기 화학식 1로 표시되는 화합물은, 상기 실시예 3-1 내지 3-13과 같이 유기 발광 소자의 정공차단층에 적용할 경우, 저전압, 고효율 구현에 기여함을 알 수 있다.Further, it can be seen that when the compound represented by
<< 전자수송층Electron transport layer 적용예Application example >>
이하의 실시예 4-1 내지 4-13에서는, 제조예 1 내지 6, 12 내지 14, 17, 및 21 내지 23의 각 화합물을 유기 발광 소자의 전자수송층에 적용하고, 그에 따른 효과를 확인하였다.In Examples 4-1 to 4-13 below, each of the compounds of Preparation Examples 1 to 6, 12 to 14, 17, and 21 to 23 was applied to the electron transport layer of an organic light-emitting device, and the effects thereof were confirmed.
비교예Comparative example 4-1 및 4-2 4-1 and 4-2
전자수송층 형성에 있어서 ET2 대신 하기 표 4에 기재된 화합물을 사용한 것을 제외하고는, 상기 비교예 3-1과 동일한 방법으로 유기 발광 소자를 제작하였다. 하기 표 4에서, ET3 및 ET4으로 표시되는 화합물은 하기와 같다. An organic light-emitting device was manufactured in the same manner as in Comparative Example 3-1, except that the compound shown in Table 4 below was used instead of ET2 in forming the electron transport layer. In Table 4 below, compounds represented by ET3 and ET4 are as follows.
실시예Example 4-1 내지 4-13 4-1 to 4-13
전자수송층 형성에 있어서 ET2 대신 하기 표 4에 기재된 화합물을 사용한 것을 제외하고는, 상기 비교예 3-1과 동일한 방법으로 유기 발광 소자를 제작하였다.An organic light-emitting device was manufactured in the same manner as in Comparative Example 3-1, except that the compound shown in Table 4 below was used instead of ET2 in forming the electron transport layer.
실험예Experimental example 4 4
실시예 4-1 내지 4-13 에 의해 제작된 유기 발광 소자에 전류를 인가하였을 때, 표 4의 결과를 얻었다. T95은 휘도가 초기휘도(1300nit)에서 95%로 감소되는데 소요되는 시간을 의미한다.When a current was applied to the organic light-emitting devices fabricated in Examples 4-1 to 4-13, the results of Table 4 were obtained. T95 refers to the time it takes for the luminance to decrease from the initial luminance (1300nit) to 95%.
(전자수송층)compound
(Electron transport layer)
(V@10Ma
/cm2)Voltage
(V@10Ma
/cm 2 )
(cd/A@10mA
/cm2)efficiency
(cd/A@10mA
/cm 2 )
(x,y)Color coordinates
(x,y)
(hr)T95
(hr)
상기 표 4에서, 상기 실시예 4-1 내지 4-13은, 유기 발광 소자의 효율, 구동 전압 및 안정성 면에서 우수한 특성을 나타냄을 알 수 있다. In Table 4, it can be seen that Examples 4-1 to 4-13 exhibit excellent characteristics in terms of efficiency, driving voltage, and stability of the organic light-emitting device.
구체적으로, 상기 실시예 4-1 내지 4-13은, 전술한 화학식 1로 표시되는 제조예 1 내지 6, 12 내지 14, 17, 및 21 내지 23 화합물을 전자수송층에 적용한 것이다. Specifically, Examples 4-1 to 4-13 are obtained by applying the compounds of Preparation Examples 1 to 6, 12 to 14, 17, and 21 to 23 represented by
표 4에서, 상기 비교예 4-1 내지 4-2은, 상기 실시예 4-1 내지 4-13에 대비하여, 유기 발광 소자의 전압이 6~9% 증가하고, 효율이 10~12% 감소하며, 수명은 크게 떨어지는 결과를 보였다.In Table 4, in Comparative Examples 4-1 to 4-2, compared to Examples 4-1 to 4-13, the voltage of the organic light emitting device was increased by 6 to 9%, and the efficiency was decreased by 10 to 12%. And the lifespan was significantly reduced.
이로부터, 상기 화학식 1로 표시되는 화합물은, 그 사이클로펜타페난트렌 중심 벤젠고리에 있어서 가장 반응성이 높은 위치 치환기가 연결(4번 및 5번 중 어느 하나의 위치 치환, 또는 두 위치 동시 치환)된 것으로, 우수한 안정성을 가져, 전자수송층에 적용될 경우 유기 발광 소자가 안정적으로 구동되게끔 하는 것으로 추론된다.From this, in the compound represented by
나아가, 상기 화학식 1로 표시되는 화합물은, 상기 실시예 4-1 내지 4-13과 같이 유기 발광 소자의 전자수송층에 적용할 경우, 저전압, 고효율 구현에 기여함을 알 수 있다.Furthermore, it can be seen that when the compound represented by
이상을 통해 본 발명의 바람직한 실시예(정공수송층, 전자억제층, 정공억제층, 전자수송층)에 대하여 설명하였지만, 본 발명은 이에 한정되는 것이 아니고 특허청구범위와 발명의 상세한 설명의 범위 안에서 여러 가지로 변형하여 실시하는 것이 가능하고 이 또한 발명의 범주에 속한다.Preferred embodiments of the present invention (hole transport layer, electron suppression layer, hole suppression layer, electron transport layer) have been described above, but the present invention is not limited thereto, but within the scope of the claims and detailed description of the invention. It is possible to change and implement it, and this also belongs to the scope of the invention.
1: 기판
2: 양극
3: 발광층
4: 음극
5: 정공주입층
6: 정공수송층
7: 전자수송층1: substrate
2: anode
3: light emitting layer
4: cathode
5: hole injection layer
6: hole transport layer
7: electron transport layer
Claims (8)
[화학식 1]
상기 화학식 1에서,
R1 및 R2는, 각각 독립적으로 치환 또는 비치환된 C1-60 알킬; 또는, 치환 또는 비치환된 C6-60 아릴기이거나, 또는 서로 결합하여 C6-60 방향족 고리를 형성하고,
Y1은, 수소; 치환 또는 비치환된 C6-60 아릴기; 또는, 치환 또는 비치환된 N, O 및 S로 구성되는 군으로부터 선택되는 헤테로원자를 1개 이상 포함하는 C2-60 헤테로고리기이며,
Y2는, 하기 화학식 3으로 표시되고,
[화학식 3]
상기 화학식 3에서,
L1은 결합; 치환 또는 비치환된 C6-60 아릴렌; 또는 치환 또는 비치환된 O, N, Si 및 S 중 1개 이상을 포함하는 C2-60 헤테로아릴렌기이고,
Ar3 및 Ar4는 각각 독립적으로, 치환 또는 비치환된 C6-60 아릴; 또는 치환 또는 비치환된 O, N, Si 및 S 중 1개 이상을 포함하는 C2-60 헤테로아릴기이며,
X1 내지 X3 각각 독립적으로 N 또는 CH이되, X1 내지 X3 중 적어도 하나는 N 이다.
Compound represented by the following formula (1):
[Formula 1]
In Formula 1,
R 1 and R 2, C 1 each independently represent a substituted or unsubstituted - 60 alkyl; Or, a substituted or unsubstituted C 6 - 60 aryl group, or is bonded to each other to form a C 6-60 aromatic ring,
Y 1 is hydrogen; A substituted or unsubstituted C 6-60 aryl group; Or, it is a C 2-60 heterocyclic group containing at least one heteroatom selected from the group consisting of substituted or unsubstituted N, O and S,
Y 2 is represented by the following formula (3),
[Chemical Formula 3]
In Chemical Formula 3,
L 1 is a bond; Substituted or unsubstituted C 6-60 arylene; Or a substituted or unsubstituted C 2-60 heteroarylene group including at least one of O, N, Si and S,
Ar 3 and Ar 4 are each independently a substituted or unsubstituted C 6-60 aryl; Or a substituted or unsubstituted C 2-60 heteroaryl group including at least one of O, N, Si and S,
Each of X 1 to X 3 is independently N or CH, but at least one of X 1 to X 3 is N.
상기 화학식 1은 하기 화학식 1-1 내지 1-3 중 어느 하나로 표시되는,
화합물:
[화학식 1-1]
[화학식 1-2]
[화학식 1-3]
The method of claim 1,
Formula 1 is represented by any one of the following Formulas 1-1 to 1-3,
compound:
[Formula 1-1]
[Formula 1-2]
[Formula 1-3]
Ar3 및 Ar4는 동일하거나 상이하고, 각각 독립적으로 하기로 구성되는 군으로부터 선택되는 어느 하나인,
화합물:
The method of claim 1,
Ar 3 and Ar 4 are the same or different, each independently any one selected from the group consisting of,
compound:
L1는 결합; 페닐; 비페닐릴; 터페닐릴; 쿼터페닐릴; 나프틸; 안트라세닐; 플루오레닐; 페난쓰레닐; 파이레닐; 또는 트리페닐레닐인,
화합물.
The method of claim 1,
L 1 is a bond; Phenyl; Biphenylyl; Terphenylyl; Quarterphenylyl; Naphthyl; Anthracenyl; Fluorenyl; Phenanthrenyl; Pyrenyl; Or triphenylenyl,
compound.
Y1은 수소인,
화합물.
The method of claim 1,
Y 1 is hydrogen,
compound.
Y1은 하기로 구성되는 군으로부터 선택되는 어느 하나인,
화합물:
여기서,
L2 내지 L5는 각각 결합; 치환 또는 비치환된 C6-60 아릴렌; 또는 치환 또는 비치환된 O, N, Si 및 S 중 1개 이상을 포함하는 C2-60 헤테로아릴렌기이고,
R3는, 수소; 치환 또는 비치환된 C1-60 알킬; 또는, 치환 또는 비치환된 C2-60 아릴기이다.
The method of claim 1,
Y 1 is any one selected from the group consisting of,
compound:
here,
L 2 to L 5 are each a bond; Substituted or unsubstituted C 6-60 arylene; Or a substituted or unsubstituted C 2-60 heteroarylene group including at least one of O, N, Si and S,
R 3 is hydrogen; Substituted or unsubstituted C 1-60 alkyl; Or, it is a substituted or unsubstituted C 2-60 aryl group.
상기 화학식 1로 표시되는 화합물은 하기로 구성되는 군으로부터 선택되는 어느 하나인,
화합물:
The method of claim 1,
The compound represented by Formula 1 is any one selected from the group consisting of,
compound:
상기 유기물층은 정공차단층 및 전자수송층을 포함하고, 상기 정공차단층 및 상기 전자수송층 중 1층 이상이 제1항 내지 제7항 중 어느 하나의 항에 따른 화합물을 포함하는 것인 유기 발광 소자.A first electrode; A second electrode provided to face the first electrode; And an organic material layer of at least one layer provided between the first electrode and the second electrode,
The organic material layer includes a hole blocking layer and an electron transport layer, and at least one of the hole blocking layer and the electron transport layer includes the compound according to any one of claims 1 to 7.
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