KR102112501B1 - Touch sensor in-cell type organic electroluminesence device - Google Patents

Abstract

The present invention discloses an in-sell type organic electroluminescent device. An in-sell type organic electroluminescent device according to an embodiment of the present invention is formed on a substrate, and at least one OLED driving thin film transistor for driving an organic light emitting device (OLED) ( OLED driving TFT); The organic light emitting device connected to the at least one OLED driving transistor through a first contact hole; At least one touch sensing thin film transistor formed on the substrate simultaneously with the at least one OLED driving thin film transistor and sensing a touch; And a touch electrode connected to the at least one touch sensing thin film transistor through a second contact hole and not overlapping the organic light emitting device, wherein the at least one OLED driving thin film transistor and the at least one touch sensing thin film transistor are included. Is characterized by sharing a gate line.

Description

Touch sensor in-cell type organic light emitting device {TOUCH SENSOR IN-CELL TYPE ORGANIC ELECTROLUMINESENCE DEVICE}

Embodiments of the present invention relates to a touch sensor in-cell type organic light emitting device, and more particularly, to a touch sensor in-cell type organic light emitting device having a reduced thickness by omitting a separate touch panel.

With the development of the information society, demands for display devices for displaying images are increasing in various forms, and in recent years, liquid crystal displays (LCDs), plasma display panels (PDPs), and organic electric fields Various display devices such as an OLED (Organic Light Emitting Diode Display Device) are used.

An organic light-emitting diode (OLED) display device, which is one of flat panel display devices (FPDs), is a self-emission type, and thus has a better viewing angle, contrast, etc. than a liquid crystal display device, and does not require a backlight. Therefore, it is possible to thin and thin, and it is advantageous in terms of power consumption. In addition, since DC low-voltage driving is possible, the response speed is fast, and all are solid, it is resistant to external shocks, has a wide operating temperature range, and is particularly cheap in terms of manufacturing cost.

Meanwhile, a touch type display device that can input a user's command by selecting a screen of a video display device as a human hand or an object has been widely used.

To this end, the touch-type display device is provided with a touch panel on the front surface of the image display device to convert a position directly in contact with a person's hand or object into an electrical signal. Accordingly, the instruction content selected at the contact position is supplied as an input signal.

As a method of implementing such a touch panel, a resistive film method, a photo sensing method, and a capacitive method are known. The double capacitive touch panel senses a change in the capacitance that the conductive sensing pattern forms with other sensing patterns in the vicinity when a human hand or object is touched.

Such a touch panel is implemented in a so-called add-on method of forming a separate touch panel on the top of the organic light emitting diode display device.

However, such an add-on touch type light emitting diode display device has a problem in that the entire thickness of the display device is increased by the touch panel and the manufacturing cost is increased by a touch panel forming process and a separate substrate required for the touch panel. have.

Korean Patent Publication No. 10-2015-0130620, "Touch screen panel integrated display device and manufacturing method" Korean Registered Patent No. 10-1588450, "Touch sensor in-cell type organic electroluminescent device" Korean Registered Patent No. 10-1589272, "Touch sensor in-cell type organic EL device and method for manufacturing the same"

An object of the embodiments of the present invention is to integrate the touch sensor into a back plane substrate of an organic light emitting device, thereby omitting a separate touch panel, thereby reducing the thickness and manufacturing cost of the display device, thereby reducing touch panel in-cell type organic. It is for manufacturing an electroluminescent device.

The purpose of the embodiments of the present invention is to drive the organic light emitting device (display) and touch sensing with a single driver (driving circuit) by forming the OLED driving thin film transistor and the touch sensing thin film transistor to share the gate line, thereby driving the driver It is for manufacturing an in-cell type organic electroluminescent device with reduced simplification and manufacturing cost.

The touch sensor in-cell type organic light emitting device according to an embodiment of the present invention is formed on a substrate, and drives at least one OLED driving thin film transistor (OLED driving TFT) for driving an organic light emitting device (OLED). ); The organic light emitting device connected to the at least one OLED driving transistor through a first contact hole; At least one touch sensing thin film transistor formed on the substrate simultaneously with the at least one OLED driving thin film transistor and sensing a touch; And a touch electrode connected to the at least one touch sensing thin film transistor through a second contact hole and not overlapping the organic light emitting device, wherein the at least one OLED driving thin film transistor and the at least one touch sensing thin film transistor are included. Shares the gate line.

The touch sensing thin film transistor includes: a gate electrode formed on the substrate; A gate insulating film formed on the gate electrode; A semiconductor layer formed on the gate insulating film; Source/drain electrodes formed on the semiconductor layer and spaced apart from each other; A passivation layer formed on the source/drain electrodes; And a touch electrode formed on the passivation layer and connected to the drain electrode through a second contact hole, wherein the touch electrode may be formed on the organic emission layer of the organic light emitting device.

The touch sensing thin film transistor includes: a gate electrode formed on the substrate; A gate insulating film formed on the gate electrode; A semiconductor layer formed on the gate insulating film; Source/drain electrodes formed on the semiconductor layer and spaced apart from each other; A passivation layer formed on the source/drain electrodes; And a touch electrode formed on the passivation layer and connected to the drain electrode through a second contact hole, and the touch electrode may be formed under the organic emission layer of the organic light emitting device.

The in-sell type organic electroluminescent device includes an emission area in which the organic light emitting device is formed and a touch electrode area in which the touch electrode is formed, and the touch electrode The area may be 50% or less of the display area.

The emission area may be less than 50% of the display area.

The touch electrode minimum value of the touch electrode may be 0.1 pF to 2 pF.

The minimum size of the touch electrode may be 2X2mm ² or less.

The touch sensor in-cell type organic light emitting diode according to an embodiment of the present invention includes at least one display pixel including an organic light emitting diode and at least one OLED driving thin film transistor; And at least one touch sensing circuit including at least one touch sensing thin film transistor connected to a touch electrode, wherein the at least one touch sensing circuit includes a side portion of the at least one display pixel. ).

The at least one OLED driving thin film transistor and the at least one touch sensing thin film transistor may share a gate line.

The touch sensing circuit may include a first touch sensing thin film transistor, a second touch sensing thin film transistor, and a capacitor.

The touch sensing circuit may include a first touch sensing thin film transistor, a second touch sensing thin film transistor, a third touch sensing thin film transistor, a fourth touch sensing thin film transistor, and a capacitor.

The touch sensing circuit may be driven by sharing a gate driver for driving a display pixel.

The touch sensing circuit may be driven by sharing a data driver for driving a display pixel.

The display device according to the exemplary embodiment of the present invention includes the touch sensor in-cell type organic light emitting diode according to the exemplary embodiment of the present invention.

According to embodiments of the present invention, a touch sensor may be integrated on a back plane substrate of an organic light emitting device, thereby omitting a separate touch panel to reduce the thickness and manufacturing cost of the display device.

According to embodiments of the present invention, the OLED driving thin film transistor and the touch sensing thin film transistor are formed to share a gate line to drive the organic light emitting device (display) and touch sensing with a single driver, thereby simplifying the driver process and manufacturing cost. Can be reduced.

1A to 1C are cross-sectional views showing a touch sensor in-cell type organic light emitting diode according to an embodiment of the present invention.
2A to 2D are plan views illustrating a light emitting region and a touch electrode region of a touch sensor in-cell type organic light emitting diode according to embodiments of the present invention.
3 is a three-dimensional view illustrating a display pixel and a touch sensing circuit of a touch sensor in-cell type organic light emitting diode according to embodiments of the present invention.
4 is a plan view showing a touch sensor in-cell type organic light emitting diode according to embodiments of the present invention.
5A is a circuit diagram illustrating a touch sensing circuit of 2T1C included in a touch sensor in-cell type organic light emitting diode according to embodiments of the present invention.
5B is a timing diagram graph showing a change in output voltage of a touch sensing circuit included in a touch sensor in-cell type organic light emitting diode according to embodiments of the present invention according to a touch/metric state to be.
6 is a circuit diagram illustrating a touch sensing circuit of 4T1C included in a touch sensor in-cell type organic light emitting device according to embodiments of the present invention.
7A and 7B are images illustrating an organic light emitting device of a touch sensor in-cell type according to embodiments of the present invention according to the size of a touch sensing circuit.
8 is an image illustrating a single touch sensing circuit included in a touch sensor in-cell type organic light emitting diode according to embodiments of the present invention.
9A to 9C are timing diagram graphs showing changes in output voltage of a touch sensing circuit included in a touch sensor in-cell type organic light emitting diode according to embodiments of the present invention according to a touch state to be.
10A to 10C are timing diagrams showing changes in output voltage of a touch sensing circuit included in a touch sensor in-cell type organic light emitting diode according to embodiments of the present invention according to a repeated touch It is a graph.
11 is an image showing a touch sensing circuit and a scan driver of an organic light emitting device of a touch sensor in-cell type according to embodiments of the present invention of 8X8.
12 is a timing diagram graph showing a voltage change of a touch sensing circuit of a touch sensor in-cell type organic light emitting diode according to embodiments of the present invention of 8X8 according to a touched point.
13 is a graph showing the voltage difference of the touch sensing circuit of the touch sensor in-cell type organic light emitting diode according to embodiments of the present invention of 8X8 in a touch/metric state.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings and the contents described in the accompanying drawings, but the present invention is not limited or limited by the embodiments.

The terminology used herein is for describing the embodiments and is not intended to limit the present invention. In the present specification, the singular form also includes the plural form unless otherwise specified in the phrase. As used herein, "comprises" and/or "comprising" refers to the components, steps, operations and/or elements mentioned above, the presence of one or more other components, steps, operations and/or elements. Or do not exclude additions.

As used herein, "example", "example", "side", "example", etc. should be construed as any aspect or design described being better or more advantageous than another aspect or designs. It is not done.

Also, the term'or' refers to the inclusive'inclusive or' rather than the exclusive'exclusive or'. That is, unless stated otherwise or unclear from the context, the expression'x uses a or b'means any of the natural inclusive permutations.

Also, the singular expression (“a” or “an”) used in the specification and claims generally means “one or more” unless the context clearly indicates that it is of the singular form or unless otherwise stated. It should be interpreted as.

The terminology used in the description below has been selected to be general and universal in the related technical field, but may have other terms depending on technology development and/or changes, conventions, and technical preferences. Therefore, the terms used in the following description should not be understood as limiting the technical idea, but should be understood as exemplary terms for describing the embodiments.

Also, in certain cases, some terms are arbitrarily selected by the applicant, and in this case, detailed meanings will be described in the corresponding description. Therefore, the terms used in the description below should be understood based on the meaning of the term and the entire contents of the specification, not just the name of the term.

Meanwhile, terms such as first and second may be used to describe various components, but the components are not limited by the terms. The terms are used only to distinguish one component from other components.

In addition, when a part such as a film, layer, area, configuration request, etc. is said to be "above" or "on" another part, as well as immediately above the other part, another film, layer, area, component in the middle This includes cases where a back is interposed.

Unless otherwise defined, all terms (including technical and scientific terms) used in the present specification may be used as meanings commonly understood by those skilled in the art to which the present invention pertains. In addition, terms defined in the commonly used dictionary are not ideally or excessively interpreted unless specifically defined.

On the other hand, in the description of the present invention, when it is determined that a detailed description of related known functions or configurations may unnecessarily obscure the subject matter of the present invention, the detailed description will be omitted. In addition, terms used in the present specification (terminology) are terms used to properly represent an embodiment of the present invention, which may vary according to a user, an operator's intention, or a custom in a field to which the present invention pertains. Therefore, definitions of these terms should be made based on the contents throughout the specification.

Hereinafter, a touch sensor in-cell type organic electroluminescent device according to embodiments of the present invention will be described with reference to FIGS. 1A to 1C.

1A to 1C are cross-sectional views showing a touch sensor in-cell type organic electroluminescent device according to embodiments of the present invention.

The touch sensor in-cell type organic electroluminescent device according to an embodiment of the present invention is formed on a substrate 110, 210, 310, and an organic light emitting device (OLED; organic light emitting device; 170, 270, 270) Organic driving connected to at least one OLED driving transistor (101, 201, 301) through at least one OLED driving TFT (101, 201, 301) and a first contact hole (H1) And light emitting elements 170, 270, 270.

In addition, at least one OLED sensing thin film transistor (101, 201, 301) formed on the substrate (110, 210, 310) at the same time, at least one touch sensing thin film transistor (sensing a touch sensing TFT) 102, 202 , 302 and the second contact hole H2 and connected to the at least one touch sensing thin film transistor 102 and include a touch electrode 180 that does not overlap with the organic light emitting elements 170, 270, and 270.

In addition, at least one OLED driving thin film transistor (101, 201, 301) and at least one touch sensing thin film transistor (102, 202, 302) share a gate line (gate line) organic light emission with a single driver (driving circuit) Driving the device (display) and touch sensing can simplify the driver process and reduce manufacturing costs.

At least one OLED driving thin film transistor (101, 201, 301) and at least one touch sensing thin film transistor (102, 202, 302) will be described in more detail with reference to the technique of sharing the gate line (gate line) in FIG. do.

In addition, the touch sensor in-cell type organic electroluminescent device according to an embodiment of the present invention reduces the thickness and manufacturing cost of the display device by omitting a separate touch panel by integrating the touch sensor on a back plane substrate. I can do it.

The backplane substrate means a state in which the configuration of the driving thin film transistor and the storage capacitor is completed, and the backplane substrate can be used not only in an organic light emitting device but also in a liquid crystal display device or other display device.

Further, according to an embodiment, at least one OLED driving thin film transistor 101, 201, 301 and at least one touch sensing thin film transistor 102, 202, 302 shown in FIGS. 1A to 1C are inverted. Or it may have a co-planar structure.

The inverted thin film transistor has a structure in which a gate electrode is attached on a substrate, and the coplanar structured thin film transistor has a structure in which a source/drain electrode, a gate insulating film, and a gate electrode are formed on a semiconductor layer.

In addition, at least one OLED driving thin film transistor 101 and at least one touch sensing thin film transistor 102 of the touch sensor in-cell type organic electroluminescent device according to an embodiment of the present invention are simultaneously formed in the same process.

More specifically, the touch sensor in-cell type organic electroluminescent device according to the embodiment of the present invention uses the first contact hole H1 on at least one OLED driving thin film transistor 101 to form an organic light emitting device ( 180) and the process of forming the touch electrode 180 by using the second contact hole H2 on the at least one touch sensing thin film transistor 102 in the same process on the substrate 110. It can be formed at the same time.

In addition, at least one OLED driving thin film transistor 101 and at least one touch sensing thin film transistor 102 of the touch sensor in-cell type organic electroluminescent device according to an embodiment of the present invention are simultaneously formed in the same process, It can simplify the process and reduce the process cost.

In addition, the touch sensor in-cell type organic light emitting diode according to the embodiment of the present invention is used as a display device.

1A to 1C include the same components except that the positions of the touch electrodes are different in the touch sensor in-cell type organic light emitting diode according to the embodiment of the present invention. I will explain.

1A is a cross-sectional view showing an organic light emitting device of a touch sensor in-cell type according to a first embodiment of the present invention.

The substrate 110 is a substrate for supporting the at least one OLED driving thin film transistor 101 and the at least one touch sensing thin film transistor 102, and a substrate having flexibility may be used, and the substrate 110 May be bent or folded in a specific direction, for example, the substrate 110 may be folded in a horizontal direction, a vertical direction, or a diagonal direction.

Preferably, the substrate 110 is silicon, glass, polyester (Polyester), polyvinyl (Polyvinyl), polycarbonate (Polycarbonate), polyethylene (Polyethylene), polyacetate (Polyacetate), polyimide (Polyimide), polyether Polyethersulphone (PES), polyacrylate (Polyacrylate; PAR), polyethylene naphthalate (Polyethylenenaphthelate; PEN) and polyethylene ether phthalate (Polyethyleneterephehalate; PET).

The gate electrode 120 is formed on the substrate 110.

The gate electrode 120 may be formed by depositing a gate conductive film (not shown), forming a photoresist pattern on the gate conductive film, and selectively etching (patterning) the gate conductive film using the photoresist pattern as a mask. have.

The gate electrode 120 may include a metal or metal oxide that is an electrically conductive material. Specifically, the gate electrode 120 is molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti) or silver (Ag), nickel (Ni), neodymium (Nd) and copper (Cu) and metal oxides such as ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), or ITZO (Indium Tin Zinc Oxide) may be made of at least one material or a combination thereof, but are not limited thereto. Does not.

Further, the gate electrode 120 may be formed of a single-layer or multi-layer structure including the above-described material.

A gate insulating layer 130 serving to insulate the gate electrode 120 and the semiconductor layer 140 is formed on the gate electrode 120.

The gate insulating layer 130 is made of an inorganic material such as silicon oxide (SiOx), silicon nitride (SiNx), titanium oxide (TiOx) or hafnium oxide (HfOx) or polyvinyl alcohol (PVA), polyvinylpyrrolidone (PVP), or Organic materials such as polymethyl methacrylate (PMMA) may be used, but are not limited thereto.

Further, the gate insulating film 130 may be formed of a single layer or a multi-layer structure including the above-described material, and the gate insulating film 130 may be formed using a deposition method or a coating method.

The semiconductor layer 140 is formed on the gate insulating layer 130.

The semiconductor layer 140 may be formed on the gate insulating layer 130, a semiconductor film for forming the semiconductor layer 140 is formed, a photoresist pattern is formed, and the semiconductor film is patterned using the photoresist pattern as a mask. Can be formed by.

In addition, the semiconductor layer 140 may include a channel region in which a channel is formed and a source/drain region connected to the source/drain electrodes 151 and 152, respectively.

The semiconductor layer 140 includes low temperature polycrystalline silicon (LTPS), indium gallium zinc oxide (IGZO), zinc oxide (ZnO), indium zinc oxide (IZO), indium tin oxide (ITO), zinc tin oxide ( ZTO), gallium zinc oxide (GZO), hafnium indium zinc oxide (HIZO), zinc indium tin oxide (ZITO), and aluminum zinc oxide (AZTO).

In addition, the semiconductor layer 140 may be formed of an amorphous (amorphous) or polycrystalline (polycrystal) containing the above-described materials.

In addition, the semiconductor layer 140 may be formed through a chemical vapor deposition (CVD) or physical vapor deposition (PVD) method.

The source/drain electrodes 151 and 152 spaced from each other are formed on the semiconductor layer 140.

The source electrode 151 and the drain electrode 152 may be formed spaced apart from each other on the semiconductor layer 140, and may be electrically connected to the semiconductor layer 140, respectively.

The source/drain electrodes 151 and 152 deposit a conductive film (hereinafter, source/drain conductive film) for forming the source/drain electrodes 151 and 152, and form a photoresist pattern on the source/drain conductive film After that, it can be formed by patterning the source/drain conductive film using the photoresist pattern as a mask.

The source/drain electrodes 151 and 152 may be formed of a metallic material, for example, molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni) ), neodymium (Nd) and copper (Cu), or any combination thereof, but is not limited thereto.

Further, the source/drain electrodes 151 and 152 may be formed in a single layer or multi-layer structure including the above-described materials.

Passivation layers 161, 162, and 163 164 are formed on the source/drain electrodes 151, 152.

Preferably, the passivation layers 161, 162, and 163 164 include a first passivation layer 161 protecting the at least one OLED driving thin film transistor 101 and at least one touch sensing thin film transistor 102, at least one A second passivation layer 162 for planarizing the surfaces of the OLED driving thin film transistor 101 and the at least one touch sensing thin film transistor 102, and a bank serving as a bank exposing the light emitting region including the organic light emitting device 170 A passivation layer 163 and a fourth passivation layer 164 protecting the at least one OLED driving thin film transistor 101 and the at least one touch sensing thin film transistor 102 may be included.

The first passivation layer 161 is formed on the source/drain electrodes 151 and 152 and may protect at least one OLED driving thin film transistor 101 and at least one touch sensing thin film transistor 102.

The first passivation layer 161 is an inorganic material such as silicon oxide (SiOx), silicon nitride (SiNx), titanium oxide (TiOx) or hafnium oxide (HfOx) or polyvinyl alcohol (PVA), polyvinylpyrrolidone (PVP) ) Or at least one of organic materials such as polymethyl methacrylate (PMMA), but is not limited thereto.

Further, the first passivation layer 161 may be formed of a single layer or a multi-layer structure including the above-described materials.

A second passivation layer 162 is formed on the first passivation layer 161 to planarize the surfaces of the at least one OLED driving thin film transistor 101 and the at least one touch sensing thin film transistor 102.

The second passivation layer 162 is an inorganic material such as silicon oxide (SiOx), silicon nitride (SiNx), titanium oxide (TiOx) or hafnium oxide (HfOx) or polyvinyl alcohol (PVA), polyvinylpyrrolidone (PVP) ) Or at least one of organic materials such as polymethyl methacrylate (PMMA), but is not limited thereto.

Further, the second passivation layer 162 may be formed of a single layer or a multi-layer structure including the above-described materials.

A first contact hole H1 is formed on the second passivation layer 162 to connect the drain electrode of the at least one OLED driving thin film transistor 101 and the organic light emitting device 170 formed in a subsequent process.

The first contact hole H1 is formed by etching the first and second passivation layers 161 and 162 and is connected to the organic light emitting layer 172 of the organic light emitting device 170 in the first contact hole H1. It may include an OLED anode 171.

The OLED anode 171 may be formed by depositing an electroconductive material in the first contact hole H1 and then selectively etching (patterning) the electroconductive material using a photoresist pattern as a mask.

Therefore, the OLED anode 171 may be formed inside the first contact hole H1 and on the surface of the second passivation layer 162.

The OLED anode 171 may include a metal or metal oxide that is an electrically conductive material. Specifically, metals such as molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti) or silver (Ag), nickel (Ni), neodymium (Nd) and copper (Cu) And metal oxides such as ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), or ITZO (Indium Tin Zinc Oxide), but are not limited thereto.

On the second passivation layer 162, a third passivation layer 163 serving as a bank exposing the organic emission layer 170 is formed.

The third passivation layer 163 is provided to define the organic light emitting device 170 of the emission region, and the third passivation layer 163 may be formed to have a relatively high protrusion.

The organic light emitting device 170 includes an OLED anode 171, an OLED cathode 173 facing the OLED cathode 171, and an organic light emitting layer positioned between the OLED anode 171 and the OLED cathode 173 172.

1A, the OLED anode 171, the organic light emitting layer 172, and the OLED cathode 173 are sequentially formed, but are not limited thereto, and the OLED cathode 173, the organic light emitting layer 172, and the OLED anode 171 are It may be formed sequentially.

According to an embodiment, between the OLED anode 171 and the organic emission layer 172 may further include an electron transporting layer or an electron injection layer, and the organic emission layer 172 and the OLED cathode ( Between 173) may further include a hole injection layer (hole injection layer) or a hole transport layer (hole transporting layer).

The OLED cathode 173 is formed on the third passivation layer 163 and the organic emission layer, and the OLED anode 171 may include a metal or metal oxide that is an electrically conductive material. Specifically, metals such as molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti) or silver (Ag), nickel (Ni), neodymium (Nd) and copper (Cu) And metal oxides such as ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), or ITZO (Indium Tin Zinc Oxide), but are not limited thereto.

In addition, the third passivation layer 163 includes a second contact hole H2 for connecting at least one touch sensing thin film transistor 102 to the touch electrode 180.

The second contact hole H2 may be formed by etching the first to third passivation layers 161 to 163.

After depositing the electroconductive material inside the second contact hole H2, the electroconductive material may be selectively etched (patterned) using a photoresist pattern as a mask.

After depositing the electroconductive material in the second contact hole H2, the photoconductive pattern is selectively etched (patterned) using the photoresist pattern as a mask to drain electrode 152 of at least one touch sensing thin film transistor 102 ) And a touch electrode 180 that is connected to it is formed.

Accordingly, the touch electrode 180 may be formed inside the second contact hole H2 and above the third passivation layer 163.

By connecting the touch electrode 180 to the at least one touch sensing thin film transistor 102 using the second contact hole H2, the touch electrode 180 can be formed on the third passivation layer 163. .

In addition, the touch electrode 180 is molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti) or silver (Ag), nickel (Ni), neodymium (Nd) and copper ( Cu) and a metal oxide such as ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), or ITZO (Indium Tin Zinc Oxide), or a combination thereof. .

Further, according to an embodiment, the touch electrode 180 and the OLED cathode 173 may be formed in the same process after forming the second contact hole H2 to simplify the process.

Referring to FIG. 1A, the touch electrode 180 of the touch sensor in-cell type organic light emitting device according to the first embodiment of the present invention may be formed on the organic light emitting layer 172 of the organic light emitting device 170. have.

Therefore, the touch electrode 180 of the touch sensor in-cell type organic light emitting device according to the first embodiment of the present invention may be formed on the same layer as the OLED cathode 173 of the organic light emitting device 170, The touch electrode 180 does not overlap with the organic light emitting device 170.

More specifically, the touch electrode 180 may be formed on the third passivation layer 163 (bank), and the touch electrode 180 is formed outside the region where the organic light emitting device 170 is formed, thereby driving organic light during display operation. The device 170 and the touch electrode 180 interact to prevent electrical or optical characteristics from being reduced.

Accordingly, in the touch sensor in-cell type organic light emitting diode according to the first embodiment of the present invention, the touch electrode 180 is not formed on the pixel electrode (not shown), and thus the transmittance can be improved.

The touch capacitance minimum value of the touch electrode 180 may be 0.1 pF to 2 pF, and when the minimum value of the touch capacitance is less than 0.1 pF, the sensing signal is small and noise increases, and 2 pF is sufficiently large. There is a problem with the yield because it represents the value.

The minimum size of the touch electrode 180 may be 2X2mm ² or less, and the minimum size of the touch electrode 180 should be manufactured to 2X2mm ² or less in order to make sufficient capacitance for sensing a touch, preferably 0.1pF.

Preferably, the minimum size of the touch electrode 180 may be 1.3x1.3 mm ² .

The fourth passivation layer 164 is formed on the third passivation layer 163 on which the OLED anode 171 and the touch electrode 180 are formed.

The fourth passivation layer 164 is an inorganic material such as silicon oxide (SiOx), silicon nitride (SiNx), titanium oxide (TiOx) or hafnium oxide (HfOx) or polyvinyl alcohol (PVA), polyvinylpyrrolidone (PVP) ) Or at least one of organic materials such as polymethyl methacrylate (PMMA), but is not limited thereto.

Further, the fourth passivation layer 164 may be formed of a single layer or a multi-layer structure including the above-described materials.

1B is a cross-sectional view showing an organic light emitting device of a touch sensor in-cell type according to a second embodiment of the present invention.

1B includes the same components as in FIG. 1A except that the positions of the touch electrodes 280 are formed on the organic light emitting device 270 and the fourth passivation layer 264, and thus the same components are omitted. I will do it.

In the touch sensor in-cell type organic electroluminescent device according to the second embodiment of the present invention, a touch electrode 280 is formed on the fourth passivation layer 264, and the touch electrode 280 is an organic light emitting device 270 ).

Accordingly, in the touch sensor in-cell type organic light emitting diode according to the second embodiment of the present invention, in order to connect at least one touch sensing thin film transistor 202 and the touch electrode 280, first to fourth passivation The second contact holes H2 may be formed by etching the layers 261 to 264.

The second contact hole H2 is formed by etching the first to fourth passivation layers 261 to 264, and after depositing an electrically conductive material in the second contact hole H2, the photoresist pattern is used as a mask. The electrically conductive material can be selectively etched (patterned).

Accordingly, the touch electrode 280 may be formed inside the second contact hole H2 and above the fourth passivation layer 264.

The touch electrode 280 may be formed on the upper portion of the fourth passivation layer 264 by connecting the touch electrode 280 to the at least one touch sensing thin film transistor 202 using the second contact hole H2. .

In addition, the touch electrode 280 is molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti) or silver (Ag), nickel (Ni), neodymium (Nd) and copper ( Cu) and a metal oxide such as ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), or ITZO (Indium Tin Zinc Oxide), or a combination thereof. .

Referring to FIG. 1B, the touch electrode 280 may be formed on the organic light emitting layer 272 of the organic light emitting device 270.

More specifically, the touch electrode 280 is formed on the fourth passivation layer 264 and formed on the region where the organic light emitting element 270 is formed, so that the organic light emitting element 270 and the touch electrode ( 280) can prevent the electrical or optical properties are reduced by interacting.

Therefore, in the touch sensor in-cell type organic light emitting diode according to the second embodiment of the present invention, the touch electrode 280 is not formed on the pixel electrode (not shown), and thus the transmittance can be improved.

1C is a cross-sectional view showing a touch sensor in-cell type organic electroluminescent device according to a third embodiment of the present invention.

1C includes the same components as in FIG. 1A, except that the position of the touch electrode 380 is formed under the organic light emitting layer 372 of the organic light emitting element 370, and the same components will be omitted. do.

Accordingly, in the touch sensor in-cell type organic light emitting diode according to the third embodiment of the present invention, the first and second passivation are performed to connect at least one touch sensing thin film transistor 302 and the touch electrode 380. The second contact holes H2 may be formed by etching the layers 361 and 362.

The second contact hole H2 is formed by etching the first and second passivation layers 361 and 362, and after depositing an electrically conductive material in the second contact hole H2, the photoresist pattern is used as a mask to make electricity. The conductive material can be selectively etched (patterned).

Accordingly, the touch electrode 380 may be formed inside the second contact hole H2 and above the second passivation layer 362.

The touch electrode 380 may be formed on the second passivation layer 362 by connecting the touch electrode 380 to the at least one touch sensing thin film transistor 302 using the second contact hole H2. .

In addition, the touch electrode 380 is molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti) or silver (Ag), nickel (Ni), neodymium (Nd) and copper ( Cu) and a metal oxide such as ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), or ITZO (Indium Tin Zinc Oxide), or a combination thereof. .

Referring to FIG. 1C, the touch electrode 380 may be formed under the organic light emitting layer 372 of the organic light emitting device 370.

Therefore, the touch electrode 380 of the touch sensor in-cell type organic light emitting device according to the third embodiment of the present invention may be formed on the same layer as the OLED cathode 373 of the organic light emitting device 370, The touch electrode 380 does not overlap the organic light emitting element 370.

More specifically, the touch electrode 380 is formed on the second passivation layer 362 and is formed outside the region in which the organic light emitting element 370 is formed, so that the organic light emitting element 370 and the touch electrode 380 are driven during display driving. ) Can prevent the electrical or optical properties from being reduced.

Accordingly, in the touch sensor in-cell type organic light emitting diode according to the third embodiment of the present invention, the touch electrode 380 is not formed on the pixel electrode (not shown), and thus the transmittance can be improved.

In addition, in order to simplify the process, the touch sensor in-cell type organic light emitting diode according to the third embodiment of the present invention forms the first contact holes H1 and H2 in the same process, and then uses the same process. An OLED cathode 373 and a touch electrode 380 may be formed.

2A to 2D are plan views illustrating a light emitting region and a touch electrode region of a touch sensor in-cell type organic light emitting diode according to embodiments of the present invention.

Referring to FIG. 2A, the touch sensor in-cell type organic light emitting device according to embodiments of the present invention includes an emission area 401 in which an organic light emitting device is formed and a touch electrode area in which a touch electrode is formed. area; 402).

The touch electrode area 402 includes at least one touch electrode having various shapes and sizes, and the touch electrode area 402 may be 50% or less of the display area.

Also, touch electrodes having various shapes and sizes included in the touch electrode region 402 will be described with reference to FIGS. 2B to 2D.

The emission region 401 is a region in which light is emitted through the organic light emitting element, and includes at least one organic light emitting element, and the emission region 401 is red (R), green ( G), blue (B) and white (W).

The emission area 401 may be less than 50% of the display area.

In addition, the touch electrode region 402 may be formed not to overlap with the emission region 401, and the touch electrode region 402 may be formed not to overlap with the emission region 401, so that the organic light emitting device and It is possible to prevent the electrical or optical characteristics from being reduced by the interaction of the touch electrodes.

Referring to FIG. 2B, the touch electrode of the touch sensor in-cell type organic light emitting diode according to embodiments of the present invention may be formed to include only one color of the organic light emitting diode of RGB.

Therefore, the touch electrode area 402 may include a plurality of touch electrodes including only one color organic light emitting diode.

Referring to FIG. 2C, the touch electrode of the touch sensor in-cell type organic light emitting diode according to embodiments of the present invention may be formed to include all of the RGB color organic light emitting diode.

Therefore, the touch electrode area 402 may include a plurality of touch electrodes including all of the RGB color organic light emitting devices.

Referring to FIG. 2D, a touch electrode of a touch sensor in-cell type organic light emitting diode according to embodiments of the present invention may be formed to include a plurality of RGB color organic light emitting diodes.

Accordingly, the touch electrode area 402 may include a plurality of touch electrodes including all of the plurality of RGB color organic light emitting devices.

Accordingly, referring to FIGS. 2A to 2D, the touch sensor in-cell type organic electroluminescent device according to embodiments of the present invention can manufacture touch electrodes having various structures.

3 is a three-dimensional view illustrating a display pixel and a touch sensing circuit of a touch sensor in-cell type organic light emitting diode according to embodiments of the present invention.

The touch sensor in-cell type organic electroluminescent device according to embodiments of the present invention includes at least one display pixel (510) and a touch electrode (522) including an organic light emitting device and at least one OLED driving thin film transistor. And at least one touch sensing circuit 520 including at least one touch sensing thin film transistor connected to.

Also, the at least one touch sensing circuit 520 may be formed on a side portion of the at least one display pixel 510.

Also, at least one OLED driving thin film transistor of at least one display pixel 510 and at least one touch sensing thin film transistor of the at least one touch sensing circuit 520 share a gate line 512. can do.

The display pixel 510 is formed on the substrate such that the pixel data line 511 and the gate line 512 intersect each other, and at least one of the pixel data lines 511 and the gate line 512 is connected to the pixel region defined by the display pixel 510. It may include an OLED driving thin film transistor.

The source electrode or the drain electrode of the at least one OLED driving thin film transistor may be connected to the pixel data line 511 and the gate electrode may be connected to the gate line 512.

In addition, the touch sensing circuit 520 is formed such that the touch sensor data line 521 and the gate line 512 intersect each other, so that the touch sensor data line 521 and the gate line 512 are within the defined touch sensing circuit area. It may include at least one touch sensing thin film transistor connected.

The source electrode or the drain electrode of the at least one touch sensing thin film transistor may be connected to the touch sensor data line 521, and the gate electrode may be connected to the gate line 512.

Accordingly, at least one OLED driving thin film transistor and at least one touch sensing thin film transistor are connected to the same gate line, thereby driving the organic light emitting device (display) and touch sensing with a single driver (driving circuit), simplifying the driver process and manufacturing cost Can be reduced.

4 is a plan view showing a touch sensor in-cell type organic light emitting diode according to embodiments of the present invention.

The display area of the touch sensor in-cell type organic light emitting diode according to the exemplary embodiments of the present invention includes a display pixel by intersecting a connection portion 612 between a pixel data line 611 and a touch electrode connected to a gate driver. The touch electrode 622 may be formed on the display pixel to correspond to the display pixel.

In addition, the display area of the touch sensor in-cell type organic light emitting diode according to embodiments of the present invention includes first to fourth surfaces, and a gate driver 610 may be formed on the first surface, A data driver (eg, data driver&thouch readout; 620) may be formed on a second surface perpendicular to the gate driver (610).

The gate driver 610 is also referred to as a'scan driver', and it is possible to sequentially drive multiple gate lines by sequentially supplying scan signals to multiple gate lines.

Further, the gate driver 610 may sequentially supply scan signals of an on voltage or an off voltage to a plurality of gate lines under the control of a timing controller (not shown).

When a specific gate line is opened by the gate driver 610, the data driver 620 may convert image data received from a timing controller (not shown) into an analog data voltage and supply it to a plurality of data lines.

In addition, the data driver 620 may supply a driving signal to the gate line and detect row data for each touch node using a readout signal output from the leadout line of the touch sensing circuit.

In order to use touch, it can be divided into a touch sensing circuit and touch driving.

The touch sensing circuit of the touch sensor in-cell type organic light emitting diode according to embodiments of the present invention is driven by sharing a gate driver for driving a display pixel, or the touch sensing circuit is driven by sharing a data driver for driving a display pixel. Can be.

Furthermore, the touch sensing circuit of the touch sensor in-cell type organic light emitting diode according to the embodiments of the present invention may share both a display pixel driving gate driver and a display pixel driving data driver.

Conventionally, in order to drive the touch electrode 622, a special connection state for driving the touch driver and the touch driver is required.

However, in the touch sensor in-cell type organic light emitting diode according to embodiments of the present invention, a gate driver (610) and a data driver (eg, data driver&thouch readout, column) are used to drive pixels. Using a gate driver (620), the connection between the touch electrode 622 and the touch electrode to connect the x-axis and y-axis, respectively (connection portion between the touch electrode connected to the gate driver; 612, a touch electrode connected to the data driver The inter-connection unit 621 may be configured to have the same connection structure as drivers provided to drive display pixels.

Therefore, the touch sensor in-cell type organic light emitting diode according to embodiments of the present invention can be connected and driven without distinguishing the touch sensing circuit from the pixel circuit.

Therefore, since the touch sensing circuit of the touch sensor in-cell type organic light emitting diode according to embodiments of the present invention is driven by sharing a gate driver or a data driver for driving a display pixel, the configuration of the touch sensing circuit becomes simpler. In a simple driving mode, the touch sensor in-cell type organic light emitting device can be driven, and the process cost for manufacturing the touch gate driver and the data driver can be reduced.

5A is a circuit diagram illustrating a touch sensing circuit of 2T1C included in a touch sensor in-cell type organic light emitting diode according to embodiments of the present invention.

The touch sensing circuit is an active touch sensing circuit structure, and may be driven by gate drivers of N and N+1 and wiring corresponding to source voltage (VSS) and output (Output).

In addition, the touch sensing circuit may have a 2T1C structure including a first touch sensing thin film transistor T ₁ , a second touch sensing thin film transistor T ₂ , and a capacitor C ₁ .

The first touch sensing thin film transistor T1 is a touch driving thin film transistor (Driving TFT) and may serve to control a touch sensing voltage and sense a touch.

In addition, the first touch sensing thin film transistor T1 is turned on according to a gate pulse from the gate lines N and N+1, and the touch switch thin film transistor is a voltage (gate voltage) of a node that changes depending on whether there is a touch. The current flowing through the touch sensor output processing unit may be controlled through the lead-out line.

The second touch sensing thin film transistor T2 may generate a turn off state of the first touch sensing thin film transistor T1 and may perform a reset function.

In addition, the gate electrode of the second touch sensing thin film transistor T2 is the gate line N, so that the second touch sensing thin film transistor T2 can share the gate lines N and N+1 with the OLED driving thin film transistor. N+1).

The capacitor C ₁ may include an area capacity due to the area of the touch electrode and a gap capacity due to the thickness of the passivation layer.

Therefore, when touch does not occur in the touch sensor in-cell type organic light emitting diode according to the embodiments of the present invention, since the areas of the touch electrodes are all the same and the thickness of the passivation layer is constant, all of them have the same storage capacity. Have

However, when a touch sensor in-cell type organic electroluminescent device according to embodiments of the present invention is touched with a finger, a touch capacitor C _T naturally occurs, which is the entirety of the touch. Since the size change of the storage capacity (C ₁ + C _T ) is caused, it is possible to know whether or not it is touched, and an operation is performed when it is touched.

More specifically, when a touch is not generated in the touch sensor in-cell type organic light emitting diode according to the embodiments of the present invention, all of the touch sensing circuits configured in the entire display area have the same size capacitor (C ₁ ). With, when a touch occurs, the touch capacitor (C _T ) is added to the part where the touch occurs, so that the size change of the total storage capacity (C ₁ + C _T ) occurs at the part where the touch occurs. Can be detected.

5B is a timing diagram showing a change in the output voltage of a touch sensing circuit included in a touch sensor in-cell type organic light emitting diode according to embodiments of the present invention according to a touch/metric (thouch/unthouch) state (timing diagram) It is a graph.

Referring to FIG. 5B, the touch sensing circuit included in the touch sensor in-cell type organic light emitting diode according to the embodiments of the present invention has an output voltage of about 2V when measured, but when touched, Since the output voltage has about 0V, the touch state and the metric state are clearly distinguished, and it is possible to sense whether or not the touch is high.

6 is a circuit diagram illustrating a touch sensing circuit of 4T1C included in a touch sensor in-cell type organic light emitting device according to embodiments of the present invention.

The touch sensing circuit of 4T1C illustrated in FIG. 6 may include the same configuration as the touch sensing circuit of 2T1C illustrated in FIG. 5A.

The touch sensing circuit of the touch sensor in-cell type organic light emitting diode according to embodiments of the present invention includes a first touch sensing thin film transistor, a second touch sensing thin film transistor, a third touch sensing thin film transistor, and a fourth touch sensing thin film. It may have a 4T1C structure including a transistor and a capacitor.

The touch sensing circuit of the 4T1C of the touch sensor in-cell type organic light emitting diode according to embodiments of the present invention simultaneously drives both the gate driver and the data driver by simultaneously sharing the gate line and the data line (column line). Can be.

Therefore, the touch sensor in-cell type organic light emitting device according to the embodiments of the present invention includes a 4T1C touch sensing circuit, so that the touch sensing circuit is complicated, but the touch sensing circuit configuration is XY driven (gate line And a data line), the touch sensing circuit configuration becomes simpler, and the touch sensor in-cell type organic electroluminescent device can be driven with a simple driving mode, and for manufacturing a touch gate driver and a data driver. Process costs can be reduced.

In addition, the touch sensor in-cell type organic light emitting diode according to the embodiments of the present invention includes a touch sensing circuit of 4T1C, so that both a gate driver and a touch sensing circuit can be built.

7A and 7B are images illustrating a touch sensor in-cell type organic electroluminescent device according to embodiments of the present invention according to the size of a touch sensing circuit.

Referring to FIG. 7A, a black portion represents a touch sensing circuit of a touch sensor in-cell type organic light emitting diode according to embodiments of the present invention, and the touch sensing circuit may have a width of 20 μm or less and touch The sensing circuit may have a vertical width of 260 μm.

7A is an example in which a touch sensing circuit for 40-inch UHD is applied to a pixel, when the pixel size is 230 x 230 µm ² , the touch electrode is ~2 x 2 mm ² , and the touch sensing circuit is ~20 x 230 It may be ² μm, and an area occupied by the touch sensing circuit per pixel may be <˜0.09%.

Referring to FIG. 7B, a black portion represents a touch sensing circuit of a touch sensor in-cell type organic light emitting diode according to embodiments of the present invention, and the touch sensing circuit may have a width of 20 μm or less and touch The sensing circuit may have a vertical width of 138 μm.

7B is an example in which a touch sensing circuit for 24-inch UHD is applied to a pixel, and the pixel size is 138 x 138 μm ² In this case, the touch electrode may be ˜2×2 mm ² , the touch sensing circuit may be ˜20×138 μm ² , and the area occupied by the touch sensing circuit per pixel may be <~0.06%.

8 is an image illustrating a single touch sensing circuit included in a touch sensor in-cell type organic light emitting diode according to embodiments of the present invention.

Referring to FIG. 8, it can be seen that a single touch sensing circuit included in the touch sensor in-cell type organic light emitting diode according to embodiments of the present invention includes two transistors and one capacitor.

9A to 9C are timing diagram graphs showing changes in output voltage of a touch sensing circuit included in a touch sensor in-cell type organic light emitting diode according to embodiments of the present invention according to a touch state to be.

9A to 9C, the touch sensor in-cell type organic light emitting diode according to embodiments of the present invention has a touch sensing circuit driving voltage (VDD) of 15 V, a frame rate of 5 kHz, and touch The size of the electrode is 500 μm ² .

9A illustrates a change in the output voltage of the touch sensing circuit included in the touch sensor in-cell type organic light emitting diode according to embodiments of the present invention in a unthouched state, and FIG. 9B shows weakly In a touch state (slightly thouched) shows a change in the output voltage of the touch sensing circuit included in the touch sensor in-cell type organic light emitting device according to embodiments of the present invention, and FIG. 9C shows a strong touch state ( It shows a change in the output voltage of the touch sensing circuit included in the touch sensor in-cell type organic light emitting device according to embodiments of the present invention in Fully thouched).

9A to 9C, the output voltage of the touch sensing circuit included in the touch sensor in-cell type organic light emitting diode according to embodiments of the present invention in a unthouched state represents 1.6 V. B, depending on the touch sensitivity, it changes to 280 mV in a slightly touched state (slightly thouched) and 0 V in a fully touched state (Fully thouched).

Accordingly, it can be seen that the voltage state of the touch sensor in-cell type organic light emitting diode according to the embodiments of the present invention changes according to the degree of touch.

10A to 10C are timing diagrams showing changes in output voltage of a touch sensing circuit included in a touch sensor in-cell type organic light emitting diode according to embodiments of the present invention according to a repeated touch It is a graph.

10A to 10C measure the fall time and rising time of the sensed touch voltage when touched.

10A to 10C, the fall time (T _fall ) was 1.5 ms, and the rising time (T _rise ) was 3.4 ms. In particular, referring to FIG. 10C, a touch state It can be seen that the voltage in the and metric release state changes dynamically.

11 is an image showing a touch sensing circuit and a scan driver of an organic light emitting diode of a touch sensor in-cell type according to embodiments of the present invention of 8X8.

In FIG. 11, if the row driver is a gate driver, the column driver may be a data driver, and if the row driver is a data driver, the column driver may be a gate driver.

Referring to FIG. 11, a row driver is formed on a side of the touch sensing circuit of the touch sensor in-cell type organic light emitting diode according to embodiments of the present invention of 8X8, and a row driver is provided. It can be seen that a column driver is formed on a vertical surface with.

In addition, a row driver and a column driver refer to a gate driver and a column gate driver for touch driving, and a row driver and a column driver ( The colum driver) can create a touch panel by creating the same driving environment as the gate driver and column gate driver for driving the pixels of the AMOLED.

12 is a timing diagram graph illustrating a voltage change of a touch sensing circuit of a touch sensor in-cell type organic light emitting diode according to embodiments of the present invention of 8X8 according to a touched point.

12 is a row driver (column driver) and the column driver (column driver) is referred to as a gate driver (gate driver) and a column gate driver (column gate driver) for driving a touch, respectively, of a touch panel manufactured with the same The properties were measured.

In addition, FIG. 12 shows that a touched position in a touch electrode of one column is sensed for a time corresponding to one frame.

Referring to FIG. 12, the state in which the touch is not performed is 700 mV, and the touch state is 10 V, indicating that the voltage difference is considerably large.

This is a result of displaying the voltage sensed for each touch electrode as shown in Figure 13.

13 is a graph showing the voltage difference of the touch sensing circuit of the touch sensor in-cell type organic light emitting diode according to embodiments of the present invention of 8X8 in a touch/metric state.

FIG. 13 shows a touch voltage output sensed according to the coordinates (x, y) of the corresponding touch electrode in FIG. 12, and shows a mapping result showing a touch sensing output composed of 8x8.

Referring to FIG. 13, it can be seen that the magnitude of the output voltage varies (different colors) depending on the touched portion.

As described above, although the present invention has been described with limited embodiments and drawings, the present invention is not limited to the above embodiments, and various modifications and variations from these descriptions will be made by those skilled in the art to which the present invention pertains. This is possible.

Therefore, the scope of the present invention should not be limited to the described embodiments, but should be defined not only by the following claims, but also by the claims and equivalents.

H1: First contact hole H2: Second contact hole
101, 201, 301: OLED driving thin film transistor
102, 202, 302: touch sensing thin film transistor
110, 210, 310: substrate 120, 220, 320: gate electrode
130, 230, 330: gate insulating film 140, 240, 340: semiconductor layer
151, 251, 351: source electrode 152, 252, 352: drain electrode
161, 261, 361: first passivation layer
162, 262, 362: second passivation layer (flattening layer)
163, 263, 363: 3rd passivation layer (bank)
164, 264, 364: 4th passivation layer 171, 271, 371: OLED anode
172, 272, 273: organic light emitting element 173, 273, 373: OLED cathode
180, 280, 380: touch electrode 401: emission area
402: touch electrode area 510: display pixel
511: pixel data line 512: gate line
520: touch sensing circuit 521: touch sensor data line
522: touch electrode 610: gate driver
611: pixel data line 620: data driver
612: connection part between the touch electrode connected to the gate driver
621: connection part between the touch electrode connected to the data driver

Claims (7)

At least one display pixel including an organic light emitting diode and at least one OLED driving thin film transistor;
At least one passivation layer formed on the at least one OLED driving thin film transistor and including a first contact hole and a second contact hole; And
A first touch sensing thin film transistor that is connected to a touch electrode and adjusts a touch sensing voltage and senses a touch, and a second touch sensing thin film transistor that creates a turn off state of the first touch sensing thin film transistor and performs a reset function. At least one touch sensing circuit comprising at least two touch sensing thin film transistors comprising:
Including,
The organic light emitting device is formed on the at least one passivation layer, and is connected to the at least one OLED driving thin film transistor through the first contact hole,
The at least one touch sensing circuit is formed on a side portion of the at least one display pixel,
The touch electrode region on which the touch electrode is formed is formed in addition to the light emitting region including the organic light emitting element,
The touch electrode is formed on the at least one passivation layer, and is connected to the at least two touch sensing thin film transistors through the second contact hole,
In the first contact hole, an anode of the organic light emitting device is formed therein to connect the at least one OLED driving thin film transistor and the organic light emitting device,
The second contact hole has the touch electrode formed therein to connect the at least two touch sensing thin film transistors and the touch electrode,
The at least one OLED driving thin film transistor and the at least two touch sensing thin film transistors share a gate line. The touch sensor in-cell type organic electroluminescent device.
delete delete According to claim 1,
The touch sensing circuit further comprises a third touch sensing thin film transistor and a fourth touch sensing thin film transistor. The touch sensor in-cell type organic electroluminescent device.
According to claim 1,
The touch sensing circuit is a touch sensor in-cell type organic electroluminescent device characterized in that it is driven by sharing a gate driver for driving a display pixel.
According to claim 1,
The touch sensing circuit is a touch sensor in-cell type organic electroluminescent device characterized in that it is driven by sharing a data driver for driving a display pixel.
A display device comprising the touch sensor in-cell type organic electroluminescent device according to any one of claims 1 to 4 to 6.

Images