KR102015845B1 - Laser irradiation device and fabrication method for organic light emitting diodes using the same - Google Patents

Abstract

The present invention relates to a laser irradiation apparatus for patterning an organic thin film on a substrate using a laser beam in the process of manufacturing an organic light emitting device, and a method of manufacturing an organic light emitting device using the same.
A feature of the present invention is that the laser irradiation apparatus is formed of a laser oscillator, an optical fiber cable, a collimating lens, an aperture and a cylindrical lens.
Through this, the homogenized line beam can be irradiated, a high energy laser beam can be obtained, and a laser irradiation apparatus can be realized at a lower cost than before.
Therefore, manufacturing cost and management cost of a laser irradiation apparatus can be reduced. ,

Description

Laser irradiation device and fabrication method for organic light emitting diodes using the same

The present invention relates to a laser irradiation apparatus for patterning an organic thin film on a substrate using a laser beam in the process of manufacturing an organic light emitting device, and a method of manufacturing an organic light emitting device using the same.

Until recently, cathode ray tubes (CRT) have been mainly used as display devices. However, in recent years, flat panel displays such as plasma display panels (PDPs), liquid crystal display devices (LCDs), and organic light emitting diodes (OLEDs), which can replace CRTs, can be used. Is a widely studied and used trend.

Among the flat panel display devices as described above, the organic light emitting device (hereinafter referred to as OLED) is a self-light emitting device, and since the backlight used in the liquid crystal display device which is a non-light emitting device is not necessary, a light weight and a thin film are possible.

In addition, the viewing angle and contrast ratio are superior to the liquid crystal display device, and it is advantageous in terms of power consumption. It is also possible to drive DC low voltage, has a fast response speed, and the internal components are solid, so it is strong against external shock and has a wide temperature range. It has advantages

In particular, since the manufacturing process is simple, there is an advantage that can reduce the production cost more than the conventional liquid crystal display device.

The OLED is a self-light emitting device that emits light through an organic light emitting diode, and the organic light emitting diode emits light through an organic light emitting phenomenon.

1 is a band diagram of an organic light emitting diode having a light emission principle due to a general organic light emitting phenomenon.

As shown, the organic light emitting diode 10 includes the anode and cathode electrodes 12 and 13 and a hole transport layer HTL 14 and an electron transport layer 14 disposed therebetween. ETL) 15 and an emission material layer (EML) 11 interposed between the hole transport film 14 and the electron transport film 15.

In addition, a hole injection layer (HIL) 16 is interposed between the anode electrode 12 and the hole transport film 14 to improve the light emission efficiency, and the cathode electrode 13 and the electron transport film 15 are interposed therebetween. An electron injection layer (EIL) 17 is interposed therebetween.

In the organic light emitting diode 10, when positive and negative voltages are applied to the anode electrode 21 and the cathode electrode 13, the holes and the cathode of the anode electrode 12 are applied. The electrons are transported to the light emitting film 11 to form excitons, and when such excitons transition from the excited state to the ground state, light is generated and emitted in the form of visible light by the light emitting film 11.

Meanwhile, in manufacturing an OLED including the organic light emitting diode 10 having the structure as described above, the hole injection film 16, the hole transport film 14, and the light emitting, which are components of the organic light emitting diode 10, are emitted. Organic thin films such as the film 11, the electron transport film 15, the electron injection film 17, and the like are mainly formed by vapor deposition through a shadow mask.

However, in the case of forming an organic thin film using a shadow mask, the size of the mask must also increase as the size of the substrate is increased by a large area display device, and a shadow effect is inevitably generated during the deposition of the organic light emitting material. Due to this problem, uniform deposition of the organic light emitting material is difficult.

Therefore, in recent years, studies to form an organic thin film on a large display device substrate using laser thermal transfer technology have been actively conducted to solve the above problems.

2 is a schematic view for explaining a process of patterning an organic thin film on a substrate by a conventional laser thermal transfer method.

As shown, the laser thermal transfer method is to coat and then pattern the organic light emitting material 22 on the lower surface of a specially manufactured thermal transfer film 21 or a donor film. Close to the surface of the substrate 31, and then irradiate the laser beam to the surface of the thermal transfer film 21 through the laser irradiation device 40 to transfer the organic light emitting material 22 onto the surface of the substrate 31. The organic thin film can be patterned in such a manner.

At this time, the laser irradiation device 40 is composed of a laser oscillator 41, a beam homogenizer (homogenizer 42), a beam transmission unit 43, a mask 44 and a projection lens 45.

In other words, the laser oscillator 41 emits a laser beam, and the emitted laser beam is uniformly processed in the beam homogenizer 42. At this time, the energy distribution of the laser beam emitted from the laser oscillator 41 is shown in FIG. As shown, it has a Gaussian energy distribution. When the laser beam having such a Gaussian energy distribution is irradiated to the thermal transfer film 21, a difference in heat generation according to the difference in energy size occurs in the spot region.

Therefore, the uniform heat generation on the thermal transfer film 21 makes it difficult to transfer the uniform organic light emitting material 22, which in turn causes a problem in patterning the organic thin film having a uniform thickness.

Thus, the laser beam emitted from the laser oscillator 41 is changed into a homogenized line beam by passing through the beam homogenizer 42.

In this way, the laser beam processed through the beam homogenizer 42 is transmitted to the beam transmission unit 43, the direction of the laser beam is changed so that the laser beam passes through the mask 44 and the projection lens 45.

The laser beam is shaped to have a size to be irradiated onto the substrate 31 while passing through the mask 44, passes through the projection lens 45, and then irradiates onto the surface of the thermal transfer film 21 on the substrate 31. do.

However, the laser irradiation apparatus 40 includes many optical components such as the beam homogenizer 42, the mask 44, the projection lens 45, and the size of the laser irradiation apparatus 40 is increased.

In addition, the beam homogenizer 42, the mask 44, the projection lens 45, and the like include optical components that require high precision processing, thereby increasing the manufacturing cost and management cost of the laser irradiation apparatus 40.

The present invention has been made to solve the above problems, and a first object of the present invention is to provide a laser irradiation apparatus having a simple configuration.

Through this, the second object is to lower the size, manufacturing cost and management cost of the laser irradiation apparatus.

In order to achieve the object as described above, the present invention comprises a laser oscillator for generating a laser beam; An optical fiber cable for converting the laser beam generated by the laser oscillator into a uniform energy distribution; A collimation lens for converting the laser beam received through the optical fiber cable into parallel light; An aperture for shaping the light passing through the collimating lens; Provided is a laser irradiation apparatus for an organic light emitting device including a cylindrical lens forming a line beam by adjusting the size of a laser beam formed through the aperture.

In this case, the aperture includes a transmission region and an impervious region, the laser beam passes through the transmission region, and adjusts the size and shape of the line beam through the size and shape of the transmission region of the aperture. .

In addition, the present invention is a laser oscillator for generating a laser beam; An optical fiber cable for converting the laser beam generated by the laser oscillator into a uniform energy distribution; A collimation lens for converting the laser beam received through the optical fiber cable into parallel light; An aperture for shaping the light passing through the collimating lens; In the organic light emitting device manufacturing method using a laser irradiation device for an organic light emitting device comprising a cylindrical lens (cylindrical lens) to form a line beam (line beam) by adjusting the size of the laser beam formed through the aperture, Forming a gate line and a data line on the substrate to define a pixel area and a driving thin film transistor connected to the gate and the data line in each pixel area; Forming a first electrode in each pixel region in contact with one electrode of the driving thin film transistor; Forming a bank overlapping an edge of the first electrode at a boundary of each pixel region; Transfer the first electrode and the first to third organic thin film transfer thermal substrates composed of first to third organic thin film transfer pattern each of the first to third organic light emitting material emitting different colors on the absorption pattern Positioning the thermal transfer substrate on the substrate so that patterns face each other; Irradiating a line beam to the thermal transfer substrate through the laser irradiation apparatus in a vacuum atmosphere to transfer the first to third organic thin film transfer patterns on the thermal transfer substrate to a substrate on which the first electrode is formed. Forming first to third organic light emitting patterns separated by pixel areas on the electrode; It provides an organic light emitting device manufacturing method comprising the step of forming a second electrode on the front surface over the first to third organic light emitting pattern.

In this case, the aperture includes a transmission region and an impervious region, the laser beam passes through the transmission region, and adjusts the size and shape of the line beam through the size and shape of the transmission region of the aperture. .

The laser irradiating apparatus may further include irradiating a line beam while scanning a line along one direction of the substrate, and laminating the thermal transfer film with the substrate through a lamination unit before irradiating the line beam. .

The first to third organic thin film transfer patterns may include one or more layers selected from a hole injection layer, a hole transport layer, a light emitting layer, a hole suppression layer, an electron transport layer, and an electron injection layer.

As described above, according to the present invention by forming a laser irradiation apparatus consisting of a laser oscillator, an optical fiber cable, a collimating lens, an aperture and a cylindrical lens, through this, there is an effect of irradiating a homogenized line beam It is possible to obtain a laser beam of high energy, and there is an effect that can implement a laser irradiation device of lower cost than the conventional.

Therefore, the manufacturing cost and the management cost of the laser irradiation apparatus can be lowered.

1 is a band diagram of an organic light emitting diode having a light emission principle due to a general organic light emitting phenomenon.
2 is a schematic view for explaining a process of patterning an organic thin film on a substrate by a conventional laser thermal transfer method.
Figure 3 is a graph showing the energy distribution of the conventional laser beam.
Figure 4 is a schematic view showing a laser irradiation apparatus according to an embodiment of the present invention.
5 is a view for explaining an optical fiber cable of the laser irradiation apparatus according to the embodiment of the present invention.
Figure 6 is a graph showing the energy distribution of the laser beam transmitted to the optical unit through the optical fiber cable of the present invention.
7 is a schematic view for explaining a method of manufacturing an organic light emitting device using the laser irradiation apparatus according to the embodiment of the present invention.
8A to 8D are cross-sectional views illustrating a method of manufacturing an organic light emitting diode using the laser irradiation apparatus according to the embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

Figure 4 is a schematic diagram showing a laser irradiation apparatus according to an embodiment of the present invention.

As shown, the laser irradiation apparatus 100 according to the embodiment of the present invention largely transmits the laser beam generated by the laser oscillator 110, the optical unit 120 and the laser oscillator 110 to the optical unit 120. It includes a cable 130. Here, the laser irradiation apparatus 100 of the present invention is a laser irradiation apparatus for forming an organic thin film by a scanning method, by repeating the process of exposing a predetermined region to the laser beam for a short time by the laser irradiation apparatus 100, The entire substrate on which the thin film is to be formed is exposed.

In order to form the organic thin film by the laser thermal transfer method, an appropriate amount of energy per unit area must be supplied to a thermal transfer film 220 or a donor film, and the laser irradiation according to the present invention is performed. The device 100 may supply an appropriate amount of energy per unit area using less energy than conventional optical systems.

At this time, the laser beam emitted from the laser oscillator 110 is elliptical, and since the laser diode junction has a rectangular shape, an elliptical laser beam is emitted.

And the cable 130 is made of a typical optical fiber cable structure having an optical fiber clad 133 and a core 135 inside the sheath 131, as shown in Figure 5, the optical fiber cable 130 is a laser beam By totally reflecting the laser beam in the optical fiber cable 130 in the process of transmitting from the oscillator 110 to the optical unit 120, the energy distribution is uniform to transmit the laser beam (L) to the optical unit 120.

The laser beam transmitted to the optical unit 120 through the optical fiber cable 130 has a uniform energy distribution in the shape of a “top hat” as shown in FIG. 6.

That is, the homogenization of the laser beam is made by total reflection through the optical fiber cable 130, and a laser beam having a Gaussian energy distribution (see FIG. 3) is introduced into the optical fiber cable 130 in the laser oscillator 110, thereby providing an optical unit ( In the process of being transmitted to 120 is continuously totally reflected by the optical fiber cladding 133, through which the original laser beam mode is modified.

Therefore, the laser beam that has passed through the optical fiber cable 130 and reaches the optical unit 120 has an energy distribution of the “Susan” type as mentioned above. Since the laser beam has a very uniform energy distribution compared with the Gaussian type laser beam, the energy of the laser beam is formed by the size of the laser beam formed on the organic light emitting material that is thermally transferred in the organic thin film patterning process by the laser thermal transfer method. Since it can transfer uniformly, the organic thin film which is very uniform and precise can be patterned.

In this case, the elliptical laser beam generated from the laser oscillator 110 is transformed into a circular laser beam in the course of passing through the optical fiber cable 130.

Here, the laser oscillator 110 described above refers to a laser oscillator having an optical component 120 formed in a circular shape to introduce an elliptical beam emitted from the laser oscillator 110 into the optical fiber cable 130.

The optical unit 120 receiving a circular laser beam having a uniform energy distribution through the optical fiber cable 130 processes the laser beam into a predetermined shape and arrangement, and then heats the processed laser beam to the thermal transfer film 220. , An organic thin film having a predetermined pattern is transferred onto a substrate.

At this time, the image of the laser beam passing through the optical unit 120 is homogenized, and has a line shape having a length in one direction. Here, the line form includes not only a line form in a dictionary meaning but also a rectangular shape having a relatively high aspect ratio.

The optical unit 120 is composed of a collimation lens (121), an aperture (123), a cylindrical lens (cylindrical lens: 125).

Here, the collimating lens 121 positioned below the laser oscillator 110 focuses a circular laser beam passing through the optical fiber cable 130 into parallel light.

That is, the circular laser beam passing through the laser oscillator 110 and the optical fiber cable 130 has a property of diverging with a predetermined numerical aperture, so that the collimated beam is collimated through the collimating lens 121. It is more efficient to convert and beamform based on the parallel collimated beam.

Here, the collimating lens 121 may be an aspherical collimating lens 121 having an aspherical profile of the incident surface or the exit surface of the laser beam in consideration of spherical aberration.

The aperture 123 is positioned below the collimating lens 121, and the circular laser beam focused through the collimating lens 121 passes through the aperture 123 serving as a mask.

In this case, the aperture 123 includes a region through which the laser beam is transmitted, that is, a transmission region and an opaque region, and the laser beam passes through the aperture 123 through the transmission region, wherein the laser beam is the aperture. The image is shaped through 123.

Here, the image refers to the size and shape of the shaped laser beam when the laser beam emitted from the laser oscillator 110 is irradiated on the surface of the thermal transfer film 220 (see FIG. 7).

In this case, the aperture 123 has a line-shaped transmission region, and the circular laser beam passing through the collimation lens 121 has a line beam shape while passing through the aperture.

Therefore, the laser beam passing through the aperture 123 has a line beam shape. At this time, by changing the size and shape of the transmission region of the aperture 123, it is possible to adjust the size and shape of the finally obtained image.

In addition, a cylindrical lens 125 is positioned below the aperture 123, and the laser beam passing through the cylindrical lens 125 is condensed, and thus the thermal transfer film 220 positioned below the laser irradiation apparatus 100. Is irradiated to the surface of FIG. 7.

At this time, the cylindrical lens 125 is focused only on one axis, and is not focused on the other axis.

Therefore, the laser beam that passes through the cylindrical lens 125 is focused in one direction, so that a line beam, that is, a one-dimensional laser beam, is formed on the thermal transfer film 220 (see FIG. 7). It is formed in the form of L).

That is, the laser beam emitted from the laser oscillator 110 passes through the collimating lens 121, the aperture 123, and the cylindrical lens 125 of the optical fiber cable 130 and the optical unit 120. converted to homogenized line beam (L).

The laser irradiation apparatus 100 according to the exemplary embodiment of the present invention irradiates the line beam L with the thermal transfer film 220 (see FIG. 7) by a scanning method, thereby forming an organic thin film 210 (FIG. 7) The whole is exposed.

At this time, the laser irradiation apparatus 100 according to the embodiment of the present invention is made of only the laser oscillator 110, the optical fiber cable 130, collimating lens 121, aperture 123 and the cylindrical lens 125, The homogenized line beam L may be irradiated with a thermal transfer film 220 (see FIG. 7).

Here, in the case of the conventional scanning method, the laser beam emitted from the laser oscillator 110 should be processed into a laser beam homogenized using a beam homogenizer (42 in FIG. 1), and accordingly, the laser beam Also, a mask (44 in FIG. 1) and a projection lens (45 in FIG. 1) including a rectangular pattern portion for forming a mold should be provided.

However, due to the processing of the beam homogenizer (42 in FIG. 1), the laser beam has an optical loss and the beam homogenizer (42 in FIG. 1) has a very expensive disadvantage.

In addition, the beam homogenizer 42 (FIG. 1), the mask 44 (FIG. 1), the projection lens 45 (FIG. 1), and the like are optical components requiring high precision processing, and are very expensive.

On the contrary, the laser irradiation apparatus 100 of the present invention uses the optical fiber cable 130, the collimating lens 121, the aperture 123, and the cylindrical beam 125 to homogenize the line beam L through the thermal transfer film ( 220, see FIG. 7), the laser irradiation apparatus 100 according to the present invention can obtain a high energy laser beam (L), it is possible to implement a laser irradiation apparatus 100 of lower cost than conventional have.

In addition, by easily varying the size and shape of the transmission region of the aperture 123, it is possible to adjust the size and shape of the line beam (L) to be easily formed.

Therefore, the manufacturing cost and the management cost of the laser irradiation apparatus 100 can be lowered.

7 is a schematic view for explaining a method of manufacturing an organic light emitting device using a laser irradiation apparatus according to an embodiment of the present invention.

As shown, the substrate 210 is positioned on the chuck 201. The substrate 210 is an organic light emitting diode substrate, and a plurality of OLED panels 211 including red, green, and blue pixels are spaced apart from each other, and pixel electrodes are formed on the OLED panels 211. have.

In this case, the pixels may have an array form of a stripe type or a dot type.

The thermal transfer film 220 is positioned to face the substrate 210. The thermal transfer film 220 may be formed of a base film and a light-to-heat conversion layer and an organic thin film transfer layer sequentially stacked on one surface of the base film.

In this case, the organic thin film transfer layer may be at least one film selected from the group consisting of a hole injection layer, a hole transport layer, an electroluminescent layer, a hole suppression layer, an electron transport layer and an electron injection layer.

Subsequently, the thermal transfer film 220 is laminated on the substrate 210 using the lamination apparatus, and then the laser irradiation apparatus 100 is positioned on the thermal transfer film 220.

Laser irradiation apparatus 100 according to an embodiment of the present invention includes a laser oscillator 110, an optical fiber cable 130 and an optical unit 120, the optical unit 120 is a collimating lens 121, aperture ( 123, cylindrical lens 125.

The laser beam generated by the laser oscillator 110 is made of parallel light through the collimating lens 121, and the laser beam passing through the collimating lens 121 is shaped into a line beam by the pattern portion of the aperture 123. .

The laser beam shaped in the form of a line beam passes through the cylindrical lens 125 and is then converted into a homogenized line beam (L).

Subsequently, the homogenized line beam L passing through the cylindrical lens 125 is irradiated onto the laminated thermal transfer film 220 to correspond to the pattern portion of the laser irradiation apparatus 100 of the thermal transfer film 220. The area is exposed by the line beam L.

Therefore, in the exposed region of the thermal transfer film 220, the light-to-heat conversion layer absorbs the energy of the line beam L irradiated to generate heat, and transfers the organic thin film under the heat-generated light-to-heat conversion layer. The layer undergoes a change in adhesion to the light-to-heat conversion layer by heat, and is transferred onto the substrate 210. As a result, an organic thin film pattern is formed on the substrate 210.

The laser irradiation apparatus 100 irradiates the line beam L to the thermal transfer film 220 while moving in the X direction and the Y direction, and continuously along the X direction and the Y direction on the entire region of the substrate 210. An organic thin film pattern is formed.

8A to 8D are cross-sectional views illustrating a method of manufacturing an organic light emitting diode using a laser irradiation apparatus according to an exemplary embodiment of the present invention.

In this case, the driving thin film transistor is illustrated in only one pixel area among the three pixel areas, and is omitted in the other two pixel areas.

As shown in FIG. 8A, a gate wiring (not shown) and a data wiring 208 defining a pixel region P are formed on the substrate 210 to cross each other, and a gate and data wiring (not shown) are formed. ), A driving thin film transistor DTr connected to these two wires 208 is formed in the vicinity of the intersection.

In this case, the driving thin film transistor DTr includes the semiconductor layer 201, the gate insulating film 202, the gate electrode 203, the source and drain electrodes 205 and 206, and the semiconductor layer 201 is made of silicon. The central portion is composed of an active region 201a constituting a channel and source and drain regions 201ba and 201b doped with a high concentration of impurities on both sides of the active region 201a.

The gate insulating film 202 is formed on the semiconductor layer 201, and the gate electrode 203 and the drawing are disposed on the gate insulating film 202 corresponding to the active region 201a of the semiconductor layer 201. Although not formed, the gate wiring extending in one direction is formed.

The first interlayer insulating film 204 is formed on the entire upper surface of the gate electrode 203 and the gate wiring (not shown), and the source and drain regions 201b are spaced apart from each other on the first interlayer insulating film 204. Source and drain electrodes 205 and 206 are respectively formed in contact with 201b).

And a second interlayer having a drain contact hole 207a exposing the drain electrode 206 over the first interlayer insulating film 204 exposed between the source and drain electrodes 205 and 206 and the two electrodes 205 and 206. An insulating film 207 is formed.

In this case, the gate insulating film 202 and the first and second interlayer insulating films 204 and 207 are made of a transparent material that can transmit light.

Although not shown in the drawing, the switching thin film transistor (not shown) has the same structure as the driving thin film transistor DTr and is connected to the driving thin film transistor DTr.

In addition, the switching and driving thin film transistor (DTr) shows, as an example, a top gate type in which the semiconductor layer 201 is made of a polysilicon semiconductor layer. It may be formed of a bottom gate type made of silicon.

Further, a first electrode 311 constituting the organic light emitting diode (E in FIG. 8D) is formed on the second interlayer insulating film 207.

The first electrode 311 is connected to the drain electrode 206 of the driving thin film transistor DTr.

The first electrode 311 is formed for each pixel region P, and a bank 313 is positioned at an edge of each pixel region P. FIG.

Next, after placing the substrate 210 having the bank 313 inside the vacuum chamber 400 capable of forming a vacuum atmosphere, a plurality of organic thin film transfer patterns 315a, 315b, and 315c made of an organic light emitting material are formed. The thermal transfer film 220 provided is positioned such that each of the organic thin film transfer patterns 315a, 315b, and 315c faces the first electrode 311.

On the other hand, the configuration of the thermal transfer film 220, the thermal transfer film 220 is a transparent substrate 221 as a base, for example, a glass substrate and the inner surface of the first to third absorption pattern 223 and First to third organic thin film transfer patterns 315a, 315b, and 315c made of organic light emitting materials emitting red, green, and blue colors are formed on the first to third absorption patterns 223, respectively.

In this case, for example, the first organic thin film transfer pattern 315a emits red, the second organic thin film transfer pattern 315b emits green, and the third organic thin film transfer pattern 315c emits blue. Is being done.

Next, as shown in FIG. 8B, the first thermally conductive film 220 facing each other in the vacuum chamber 400, the first substrates facing the substrate 210 on which the bank 313 and the first electrode 311 are formed, may face each other. The third organic thin film transfer patterns 315a, 315b, and 315c are closely spaced apart from each other by several hundred μm to several mm.

Subsequently, by moving the homogenized line beam L at a constant speed with respect to the rear surface of the thermal transfer film 220 by the laser irradiation apparatus 100 according to an embodiment of the present invention, as if scanning from one end to the other end. Investigate.

At this time, the laser irradiation apparatus 100 according to the embodiment of the present invention is a laser oscillator (110 of FIG. 7), the optical fiber cable (130 of FIG. 7), the collimation lens of the optical unit (120 of FIG. 7) 121, the homogenized line beam L may be irradiated with the thermal transfer film 220, even though only the aperture (123 of FIG. 7) and the cylindrical lens (125 of FIG. 7).

In the laser irradiation apparatus 100 according to the embodiment of the present invention, a high-energy line beam L may be obtained, and a laser irradiation apparatus 100 having a lower cost than that of the related art may be realized. Therefore, the manufacturing cost and the management cost of the laser irradiation apparatus 100 can be lowered, and the efficiency of the process can be improved.

As such, by irradiating the back surface of the thermal transfer film 220 with the homogenized line beam L through the laser irradiation apparatus 100 according to the embodiment of the present invention, the first to third absorption patterns 223 The radiated heat is transferred to the first to third organic thin film transfer patterns (315a, 315b, and 315c of FIG. 8A), respectively, and the first to third organic thin film transfer patterns (315a, 315b, and 315c of FIG. 8A) are firstly formed. The adhesive force at the interface with each of the third to third absorption patterns 223 is weakened, so that the first to third organic thin film transfer patterns (315a, 315b, and 315c of FIG. 8A) gradually become the first to third absorption patterns 223. Will come off.

In this case, the first to third organic thin film transfer patterns (315a, 315b, and 315c of FIG. 8A) separated from the first to third absorption patterns 223 may be formed on the surface of the first electrode 311 and the side surface of the bank 313. The first electrode 311 is transferred to the substrate 210 on which the first electrode 311 is formed to form the first to third organic light emitting patterns 317a, 317b, and 317c as illustrated in FIG. 8C.

At this time, since all of these processes proceed in a vacuum atmosphere inside the vacuum chamber 400 (see FIG. 8B), the first to third organic light emitting patterns 317a, 317b, and 317c formed on the substrate 210 are transferred to the substrate 210. There is no room for the air layer to be interposed between the first electrodes 311.

In addition, since the first to third organic thin film transfer patterns (315a, 315b, and 315c of FIG. 8A) are themselves organic materials, the first to third organic thin film transfer patterns (eg, 315a, 315b, and 315c) have ductile properties and have room temperature due to heat transmitted through the first to third absorption patterns 223. Rather than having a high temperature, when the contact with the first electrode 311 and the bank 313 is completely in contact.

Next, as shown in FIG. 8D, the front surface of the substrate 210 on which the first to third organic light emitting patterns 317 are formed to emit red, green, and blue light is respectively over the first to third organic light emitting patterns 317. For example, indium tin oxide (ITO) or indium zinc oxide (IZO) having a relatively high work function value is formed on the entire surface to form the second electrode 319.

At this time, the first electrode 311, each organic light emitting pattern 317, and the second electrode 319 sequentially stacked in one pixel area P form an organic light emitting diode E.

Subsequently, although not shown in the drawing for the encap substrate, a seal pattern (not shown) may be formed along the edge of the encap substrate, and the organic light emitting device may be completed by bonding the encap substrate with the substrate 210.

As described above, the laser irradiation apparatus (100 in FIG. 8B) of the present invention includes a laser oscillator (110 in FIG. 7), an optical fiber cable (130 in FIG. 7), and a collimation lens (FIG. 120 in FIG. 7). 7, the aperture (123 in FIG. 7) and the cylindrical lens (123 in FIG. 7), the homogenized line beam (L in FIG. 8B) can be irradiated with the thermal transfer film (220 in FIG. 8B). have. Through this, the laser irradiation apparatus (100 of FIG. 8B) according to the present invention can obtain a high-energy line beam (L of FIG. 8B), and can implement a laser irradiation apparatus (100 of FIG. 8B) which is cheaper than the conventional one. have.

Therefore, manufacturing cost and management cost of the laser irradiation apparatus (100 of FIG. 8B) can be lowered, and the efficiency of the process can be improved.

The present invention is not limited to the above embodiments, and various modifications can be made without departing from the spirit of the present invention.

100: laser irradiation device
110: laser oscillator
120: optical unit (121: collimating lens, 123: aperture, 125: cylindrical lens)
130: fiber optic cable
201: Chuck
210: substrate, 211: OLED panel
220: thermal transfer film
L: line beam

Claims (9)

delete delete delete A laser oscillator for generating a laser beam; An optical fiber cable for converting the laser beam generated by the laser oscillator into a uniform energy distribution; A collimation lens for converting and focusing the laser beam received through the optical fiber cable into parallel light; An aperture for shaping the light passing through the collimating lens; It comprises a cylindrical lens (cylindrical lens) to form a laser beam line beam formed through the aperture, wherein the collimating lens using a laser irradiation device for an organic light emitting device consisting of an aspherical surface and the incident surface In the organic light emitting device manufacturing method,
Forming a gate line and a data line on the substrate to define a pixel area and a driving thin film transistor connected to the gate and the data line in each pixel area;
Forming a first electrode in each pixel region in contact with one electrode of the driving thin film transistor;
Forming a bank overlapping an edge of the first electrode at a boundary of each pixel region;
Transfer the first electrode and the first to third organic thin film transfer thermal substrates composed of first to third organic thin film transfer pattern each of the first to third organic light emitting material emitting different colors on the absorption pattern Positioning the thermal transfer substrate on the substrate so that patterns face each other;
Irradiating a line beam to the thermal transfer substrate through the laser irradiation apparatus in a vacuum atmosphere to transfer the first to third organic thin film transfer patterns on the thermal transfer substrate to a substrate on which the first electrode is formed. Forming first to third organic light emitting patterns separated by pixel areas on the electrode;
Forming a second electrode on a front surface of the first to third organic light emitting patterns
Organic light emitting device manufacturing method comprising a.
The method of claim 4, wherein
The aperture includes a transmission region and an impermeable region, wherein the laser beam passes through the transmission region.
The method of claim 5,
The method of manufacturing an organic light emitting device to adjust the length and shape of the line beam through the size and shape of the transmission region of the aperture.
The method of claim 4, wherein
The laser irradiation apparatus is an organic light emitting device manufacturing method for irradiating a line beam while scanning movement along one direction of the substrate.
The method of claim 4, wherein
The method of manufacturing an organic light emitting diode further comprises the step of laminating the thermal transfer substrate with the substrate through a lamination unit before irradiating the line beam.
The method of claim 4, wherein
The first to third organic thin film transfer pattern is an organic light emitting device manufacturing method of one or a plurality of layers selected from a hole injection layer, a hole transport layer, a light emitting layer, a hole suppression layer, an electron transport layer and an electron injection layer.

Images