KR101935943B1 - Substrate treating apparatus and cleaning method for substrate treating apparatus - Google Patents

Abstract

The present invention relates to a substrate processing apparatus and a substrate processing apparatus cleaning method. A substrate processing apparatus according to an embodiment of the present invention includes a support plate for supporting a processed substrate; A driver connected to the support plate through an axis to provide power to rotate the support plate; A processing vessel positioned around the support plate; A cleaning nozzle located below the support plate for spraying a cleaning fluid for cleaning the processing container; And a liquid supply unit for supplying the treatment liquid to the substrate.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a substrate processing apparatus and a substrate processing apparatus,

The present invention relates to a substrate processing apparatus and a substrate processing apparatus cleaning method.

Various processes such as photolithography, etching, ashing, thin film deposition, and cleaning processes are performed for manufacturing semiconductor devices and flat panel display panels. Among these processes, the photolithography process sequentially performs the application, exposure, and development steps. The coating step is a step of applying a photosensitive liquid such as a resist to the surface of the substrate. The exposure process is a process for exposing a circuit pattern on a substrate having a photosensitive film formed thereon. The developing step is a step of selectively developing the exposed region of the substrate.

The developing process may include a developer supplying step, a rinsing liquid supplying step, and a drying step. The developing solution supplying step, the rinse solution supplying step, and the drying step are sequentially performed. The developing solution supplying step is a step of supplying the developing solution onto the substrate and developing the exposed area, and the rinsing solution supplying step is a step of rinsing the process by-products and residual developing solution generated by the developing solution. The drying step is a step of drying the rinsing liquid remaining on the substrate.

The present invention provides a substrate processing apparatus and a substrate processing apparatus cleaning method for efficiently processing a substrate.

The present invention also provides a substrate processing apparatus and a substrate processing apparatus cleaning method in which contamination by particles is prevented while a substrate is being processed.

According to an aspect of the invention, there is provided a lithographic apparatus comprising: a support plate for supporting a processed substrate; A driver connected to the support plate through an axis to provide power to rotate the support plate; A processing vessel positioned around the support plate; A cleaning nozzle located below the support plate for spraying a cleaning fluid for cleaning the processing container; And a liquid supply unit for supplying the processing liquid to the substrate.

The controller may further include a controller for controlling the actuator to rotate the support plate while the cleaning fluid is being injected.

In addition, the controller may control the actuator such that the rotational speed of the support plate is rotated at at least two different speeds while the cleaning fluid is being injected.

In addition, the support plate may have a guide portion formed on the outer side of the bottom surface and having a larger upper circumference than the lower end, and the cleaning nozzle may be provided so that the injected cleaning fluid faces the guide portion.

In addition, the upper surface of the support plate may have a smaller area than the substrate.

Further, a suction hole for sucking the substrate may be formed on the upper surface of the support plate.

Further, the tubular shape located outside the shaft may further include a hollow shaft, and the cleaning nozzle may be located in the arm connected to the hollow side.

According to another aspect of the present invention, there is provided a method of cleaning a substrate, comprising: spraying a cleaning fluid to a bottom surface of a support plate supporting the substrate; And cleaning the processing vessel located around the support plate by scattering the cleaning fluid to the outside of the support plate.

In addition, the support plate may be provided in a rotated state when the cleaning fluid is injected.

Further, when the cleaning fluid is injected, the rotation speed of the support plate can be changed to at least two different speeds.

Further, when the cleaning fluid is sprayed, the height of the processing vessel relative to the support plate may be changed.

Further, when the cleaning fluid is sprayed, the support plate may be provided in a state in which the substrate is not supported.

According to one embodiment of the present invention, a substrate processing apparatus and a substrate processing apparatus cleaning method capable of efficiently processing a substrate can be provided.

According to an embodiment of the present invention, there is provided a substrate processing apparatus and a substrate processing apparatus cleaning method in which contamination by particles is prevented while a substrate is being processed.

1 is a top view of the substrate processing apparatus.
Fig. 2 is a view of the facility of Fig. 1 viewed from the direction AA.
Fig. 3 is a view of the equipment of Fig. 1 viewed from the BB direction.
Fig. 4 is a view of the facility of Fig. 1 viewed from the CC direction; Fig.
5 is a cross-sectional view showing the liquid processing chamber.
6 is a view showing a state in which the cleaning of the processing vessel is performed according to the upper cleaning step.
7 is a view showing a state in which the processing vessel is cleaned in accordance with the lower cleaning step.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The embodiments of the present invention can be modified in various forms, and the scope of the present invention should not be construed as being limited to the following embodiments. This embodiment is provided to more fully describe the present invention to those skilled in the art. Thus, the shape of the elements in the figures has been exaggerated to emphasize a clearer description.

The facility of this embodiment is used to perform a photolithography process on a substrate such as a semiconductor wafer or a flat panel display panel. In particular, the facilities of this embodiment are used to perform a coating process, a development process, and a pre- and post-exposure process required for the substrate before and after the immersion exposure. Hereinafter, a case where a wafer is used as a substrate will be described as an example.

1 to 4 are schematic views of a substrate processing apparatus according to an embodiment of the present invention. 1 is a plan view of the apparatus of FIG. 1 viewed from the direction AA, FIG. 3 is a view of the apparatus of FIG. 1 viewed from the BB direction, FIG. 4 is a view of the apparatus of FIG. 1 In the CC direction.

1 to 4, the substrate processing apparatus 1 includes a load port 100, an index module 200, a first buffer module 300, a coating and developing module 400, a second buffer module 500 An exposure pre- and post-processing module 600, an interface module 700, and a purge module 800. The load port 100, the index module 200, the first buffer module 300, the application and development module 400, the second buffer module 500, the pre-exposure processing module 600, and the interface module 700, Are sequentially arranged in one direction in a single direction. The fuzzy module 800 may be provided in a position where the exposure apparatus 1000 at the rear end of the interface module 700 is connected or a side of the interface module 700 And can be provided in various positions.

Hereinafter, the load port 100, the index module 200, the first buffer module 300, the coating and developing module 400, the second buffer module 500, the pre-exposure processing module 600, 700 are referred to as a first direction 12 and a direction perpendicular to the first direction 12 as viewed from above is referred to as a second direction 14 and a direction in which the first direction 12 and the second And a direction perpendicular to the direction 14 is referred to as a third direction 16.

The wafer W is moved in a state accommodated in the cassette 20. At this time, the cassette 20 has a structure that can be sealed from the outside. For example, as the cassette 20, a front open unified pod (FOUP) having a door at the front can be used.

Hereinafter, the load port 100, the index module 200, the first buffer module 300, the application and development module 400, the second buffer module 500, the pre-exposure processing module 600, the interface module 700 ), And the fuzzy module 800 will be described in detail.

(Load port)

The load port 100 has a mounting table 120 on which a cassette 20 accommodating wafers W is placed. A plurality of mounts 120 are provided, and the mounts 200 are arranged in a line along the second direction 14. [ In Fig. 1, four placement tables 120 are provided.

(Index module)

The index module 200 transfers the wafer W between the cassette 20 placed on the table 120 of the load port 100 and the first buffer module 300. The index module 200 has a frame 210, an index robot 220, and a guide rail 230. The frame 210 is provided generally in the shape of an inner rectangular parallelepiped and is disposed between the load port 100 and the first buffer module 300. The frame 210 of the index module 200 may be provided at a lower height than the frame 310 of the first buffer module 300 described later. The index robot 220 and the guide rail 230 are disposed within the frame 210. The index robot 220 is a four-axis drive system in which the hand 221 directly handling the wafer W is movable in the first direction 12, the second direction 14 and the third direction 16, . The index robot 220 has a hand 221, an arm 222, a support 223, and a pedestal 224. The hand 221 is fixed to the arm 222. The arm 222 is provided with a stretchable structure and a rotatable structure. The support base 223 is disposed along the third direction 16 in the longitudinal direction. The arm 222 is coupled to the support 223 to be movable along the support 223. The support 223 is fixedly coupled to the pedestal 224. The guide rails 230 are provided so that their longitudinal direction is arranged along the second direction 14. The pedestal 224 is coupled to the guide rail 230 so as to be linearly movable along the guide rail 230. Further, although not shown, the frame 210 is further provided with a door opener for opening and closing the door of the cassette 20.

(First buffer module)

The first buffer module 300 has a frame 310, a first buffer 320, a second buffer 330, a cooling chamber 350, and a first buffer robot 360. The frame 310 is provided in the shape of an inner rectangular parallelepiped and is disposed between the index module 200 and the application and development module 400. The first buffer 320, the second buffer 330, the cooling chamber 350, and the first buffer robot 360 are located within the frame 310. The cooling chamber 350, the second buffer 330, and the first buffer 320 are sequentially disposed in the third direction 16 from below. The second buffer 330 and the cooling chamber 350 are located at a height corresponding to the coating module 401 of the coating and developing module 400 described later and the coating and developing module 400 at a height corresponding to the developing module 402. [ The first buffer robot 360 is spaced apart from the second buffer 330, the cooling chamber 350 and the first buffer 320 by a predetermined distance in the second direction 14.

The first buffer 320 and the second buffer 330 temporarily store a plurality of wafers W, respectively. The second buffer 330 has a housing 331 and a plurality of supports 332. The supports 332 are disposed within the housing 331 and are provided spaced apart from each other in the third direction 16. One wafer W is placed on each support 332. The housing 331 is configured such that the index robot 220, the first buffer robot 360 and the development robot 482 of the developing module 402 described later attach the wafer W to the support 332 in the housing 331 (Not shown) in the direction in which the index robot 220 is provided, in the direction in which the first buffer robot 360 is provided, and in the direction in which the developing robot 482 is provided, so that the developing robot 482 can carry it in or out. The first buffer 320 has a structure substantially similar to that of the second buffer 330. The housing 321 of the first buffer 320 has an opening in a direction in which the first buffer robot 360 is provided and in a direction in which the application unit robot 432 located in the application module 401 described later is provided. The number of supports 322 provided in the first buffer 320 and the number of supports 332 provided in the second buffer 330 may be the same or different. According to one example, the number of supports 332 provided in the second buffer 330 may be greater than the number of supports 322 provided in the first buffer 320.

The first buffer robot 360 transfers the wafer W between the first buffer 320 and the second buffer 330. The first buffer robot 360 has a hand 361, an arm 362, and a support base 363. The hand 361 is fixed to the arm 362. The arm 362 is provided in a stretchable configuration so that the hand 361 is movable along the second direction 14. The arm 362 is coupled to the support 363 so as to be linearly movable along the support 363 in the third direction 16. The support base 363 has a length extending from a position corresponding to the second buffer 330 to a position corresponding to the first buffer 320. The support member 363 may be provided longer in the upward or downward direction. The first buffer robot 360 may be provided so that the hand 361 is simply driven in two directions along the second direction 14 and the third direction 16.

The cooling chambers 350 cool the wafers W, respectively. The cooling chamber 350 has a housing 351 and a cooling plate 352. The cooling plate 352 has an upper surface on which the wafer W is placed and a cooling means 353 for cooling the wafer W. [ As the cooling means 353, various methods such as cooling with cooling water and cooling using a thermoelectric element can be used. In addition, the cooling chamber 350 may be provided with a lift pin assembly (not shown) for positioning the wafer W on the cooling plate 352. The housing 351 is provided with an index robot 220 so that the developing robot 482 provided in the index robot 220 and a developing module 402 described later can carry the wafers W into or out of the cooling plate 352 (Not shown) in the direction provided and the direction in which the developing robot 482 is provided. Further, the cooling chamber 350 may be provided with doors (not shown) for opening and closing the above-described opening.

(Application and development module)

The coating and developing module 400 performs a process of applying a photoresist on the wafer W before the exposure process and a process of developing the wafer W after the exposure process. The application and development module 400 has a generally rectangular parallelepiped shape. The coating and developing module 400 has a coating module 401 and a developing module 402. The application module 401 and the development module 402 are arranged so as to be partitioned into layers with respect to each other. According to one example, the application module 401 is located on top of the development module 402.

The application module 401 includes a step of applying a photosensitive liquid such as a photoresist to the wafer W and a heat treatment step such as heating and cooling for the wafer W before and after the resist application step. The application module 401 has a resist application chamber 410, a bake chamber 420, and a transfer chamber 430. The resist application chamber 410, the bake chamber 420, and the transfer chamber 430 are sequentially disposed along the second direction 14. [ The resist application chamber 410 and the bake chamber 420 are positioned apart from each other in the second direction 14 with the transfer chamber 430 interposed therebetween. A plurality of resist coating chambers 410 are provided, and a plurality of resist coating chambers 410 are provided in the first direction 12 and the third direction 16, respectively. In the figure, six resist coating chambers 410 are provided. A plurality of bake chambers 420 are provided in the first direction 12 and the third direction 16, respectively. In the drawing, six bake chambers 420 are provided. Alternatively, however, the bake chamber 420 may be provided in a greater number.

The transfer chamber 430 is positioned in parallel with the first buffer 320 of the first buffer module 300 in the first direction 12. In the transfer chamber 430, a dispenser robot 432 and a guide rail 433 are positioned. The transfer chamber 430 has a generally rectangular shape. The applicator robot 432 is connected to the bake chambers 420, the resist application chambers 400, the first buffer 320 of the first buffer module 300, and the first buffer module 500 of the second buffer module 500 And transfers the wafer W between the cooling chambers 520. The guide rails 433 are arranged so that their longitudinal directions are parallel to the first direction 12. The guide rails 433 guide the applying robot 432 to move linearly in the first direction 12. The applicator robot 432 has a hand 434, an arm 435, a support 436, and a pedestal 437. The hand 434 is fixed to the arm 435. The arm 435 is provided in a stretchable configuration so that the hand 434 is movable in the horizontal direction. The support 436 is provided so that its longitudinal direction is disposed along the third direction 16. The arm 435 is coupled to the support 436 so as to be linearly movable in the third direction 16 along the support 436. The support 436 is fixedly coupled to the pedestal 437 and the pedestal 437 is coupled to the guide rail 433 so as to be movable along the guide rail 433.

The resist coating chambers 410 all have the same structure. However, the types of the photoresist used in each of the resist coating chambers 410 may be different from each other. As an example, a chemical amplification resist may be used as the photoresist. The resist coating chamber 410 applies a photoresist on the wafer W. [ The resist coating chamber 410 has a housing 411, a support plate 412, and a nozzle 413. The housing 411 has a cup shape with an open top. The support plate 412 is located in the housing 411 and supports the wafer W. [ The support plate 412 is rotatably provided. The nozzle 413 supplies the photoresist onto the wafer W placed on the support plate 412. The nozzle 413 has a circular tube shape and can supply photoresist to the center of the wafer W. [ Alternatively, the nozzle 413 may have a length corresponding to the diameter of the wafer W, and the discharge port of the nozzle 413 may be provided as a slit. In addition, the resist coating chamber 410 may further be provided with a nozzle 414 for supplying a cleaning liquid such as deionized water to clean the surface of the wafer W coated with the photoresist.

The bake chamber 420 heat-treats the wafer W. For example, the bake chambers 420 may be formed by a prebake process in which the wafer W is heated to a predetermined temperature to remove organic matter and moisture on the surface of the wafer W before the photoresist is applied, A soft bake process is performed after coating the wafer W on the wafer W, and a cooling process for cooling the wafer W after each heating process is performed. The bake chamber 420 has a cooling plate 421 or a heating plate 422. The cooling plate 421 is provided with a cooling means 423 such as a cooling water or a thermoelectric element. The heating plate 422 is also provided with a heating means 424, such as a hot wire or a thermoelectric element. The cooling plate 421 and the heating plate 422 may be provided in a single bake chamber 420, respectively. Optionally, some of the bake chambers 420 may include only the cooling plate 421, and the other portions may include only the heating plate 422.

The developing module 402 includes a developing process of supplying a developing solution to obtain a pattern on the wafer W to remove a part of the photoresist and a heat treatment process such as heating and cooling performed on the wafer W before and after the developing process . The development module 5402 has a development chamber 460, a bake chamber 470, and a transfer chamber 480. The development chamber 460, the bake chamber 470, and the transfer chamber 480 are sequentially disposed along the second direction 14. The development chamber 460 and the bake chamber 470 are positioned apart from each other in the second direction 14 with the transfer chamber 480 therebetween. A plurality of developing chambers 460 are provided, and a plurality of developing chambers 460 are provided in the first direction 12 and the third direction 16, respectively. In the drawing, six development chambers 460 are provided. A plurality of bake chambers 470 are provided in the first direction 12 and the third direction 16, respectively. In the drawing, six bake chambers 470 are provided. Alternatively, however, the bake chamber 470 can be provided in greater numbers.

The transfer chamber 480 is positioned in parallel with the second buffer 330 of the first buffer module 300 in the first direction 12. In the transfer chamber 480, the developing robot 482 and the guide rail 483 are positioned. The delivery chamber 480 has a generally rectangular shape. The development robot 482 is connected to the bake chambers 470 and the development chambers 460 and the second buffer 330 and the cooling chamber 350 of the first buffer module 300 and the second buffer module 500, The wafer W is transferred between the second cooling chambers 540 of the wafer W. The guide rail 483 is arranged such that its longitudinal direction is parallel to the first direction 12. The guide rail 483 guides the developing robot 482 to linearly move in the first direction 12. The developing sub-robot 482 has a hand 484, an arm 485, a supporting stand 486, and a pedestal 487. The hand 484 is fixed to the arm 485. The arm 485 is provided in a stretchable configuration to allow the hand 484 to move in a horizontal direction. The support 486 is provided so that its longitudinal direction is disposed along the third direction 16. The arm 485 is coupled to the support 486 such that it is linearly movable along the support 486 in the third direction 16. The support table 486 is fixedly coupled to the pedestal 487. The pedestal 487 is coupled to the guide rail 483 so as to be movable along the guide rail 483.

The development chambers 460 all have the same structure. However, the types of developers used in the respective developing chambers 460 may be different from each other. The development chamber 460 removes a region of the photoresist on the wafer W irradiated with light. At this time, the area of the protective film irradiated with the light is also removed. Depending on the type of selectively used photoresist, only the areas of the photoresist and protective film that are not irradiated with light can be removed.

The development chamber 460 has a processing container 461, a substrate support member 462, and nozzles 463 and 464. The processing vessel 461 has a cup shape with an open top. The substrate supporting member 462 is placed in the processing vessel 461 and supports the wafer W. [ The substrate support member 462 is rotatably provided. The nozzles 463 and 464 supply the fluid for development processing onto the wafer W placed on the substrate supporting member 462. The nozzles 463 and 464 have a circular tube shape and can supply fluid to the center of the wafer W. [ Alternatively, the nozzles 463 and 464 may have a length corresponding to the diameter of the wafer W, and the discharge ports of the nozzles 463 and 464 may be provided as slits. Further, the developing chamber 460 may further be provided with a nozzle for supplying a cleaning liquid such as deionized water to clean the surface of the wafer W to which the developer is supplied.

The bake chamber 470 heat-treats the wafer W. For example, the bake chambers 470 may include a post-bake process for heating the wafer W before the development process is performed, a hard bake process for heating the wafer W after the development process is performed, And a cooling step for cooling the wafer. The bake chamber 470 has a cooling plate 471 or a heating plate 472. The cooling plate 471 is provided with a cooling means 473 such as a cooling water or a thermoelectric element. Or the heating plate 472 is provided with a heating means 474 such as a hot wire or a thermoelectric element. The cooling plate 471 and the heating plate 472 may be provided in one bake chamber 470, respectively. Optionally, some of the bake chambers 470 may have only a cooling plate 471, while the other may have only a heating plate 472. [

As described above, in the application and development module 400, the application module 401 and the development module 402 are provided to be separated from each other. In addition, the application module 401 and the development module 402 may have the same chamber arrangement as viewed from above.

(Second buffer module)

The second buffer module 500 is provided as a path through which the wafer W is transferred between the application and development module 400 and the pre- and post-exposure processing module 600. The second buffer module 500 performs a predetermined process on the wafer W such as a cooling process or an edge exposure process. The second buffer module 500 includes a frame 510, a buffer 520, a first cooling chamber 530, a second cooling chamber 540, an edge exposure chamber 550, and a second buffer robot 560 I have. The frame 510 has a rectangular parallelepiped shape. The buffer 520, the first cooling chamber 530, the second cooling chamber 540, the edge exposure chamber 550, and the second buffer robot 560 are located within the frame 510. The buffer 520, the first cooling chamber 530, and the edge exposure chamber 550 are disposed at a height corresponding to the application module 401. The second cooling chamber 540 is disposed at a height corresponding to the development module 402. The buffer 520, the first cooling chamber 530, and the second cooling chamber 540 are sequentially arranged in a row along the third direction 16. The buffer 520 is disposed along the first direction 12 with the transfer chamber 430 of the application module 401. [ The edge exposure chamber 550 is spaced a certain distance in the second direction 14 from the buffer 520 or the first cooling chamber 530.

The second buffer robot 560 carries the wafer W between the buffer 520, the first cooling chamber 530, and the edge exposure chamber 550. A second buffer robot 560 is positioned between the edge exposure chamber 550 and the buffer 520. The second buffer robot 560 may be provided in a structure similar to that of the first buffer robot 360. The first cooling chamber 530 and the edge exposure chamber 550 perform a subsequent process on the wafers W that have been processed in the application module 401. The first cooling chamber 530 cools the wafer W processed in the application module 401. The first cooling chamber 530 has a structure similar to the cooling chamber 350 of the first buffer module 300. The edge exposure chamber 550 exposes its edge to the wafers W that have undergone the cooling process in the first cooling chamber 530. The buffer 520 temporarily stores the wafers W before the wafers W processed in the edge exposure chamber 550 are transferred to the preprocessing module 601 to be described later. The second cooling chamber 540 cools the wafers W before the wafers W processed in the post-processing module 602 described below are conveyed to the developing module 402. The second buffer module 500 may further have a buffer added to the height corresponding to the development module 402. In this case, the wafers W processed in the post-processing module 602 may be temporarily stored in the added buffer and then transferred to the developing module 402. [

(Pre-exposure post-processing module)

The pre- and post-exposure processing module 600 can process a process of applying a protective film for protecting the photoresist film applied to the wafer W during liquid immersion exposure when the exposure apparatus 1000 performs the liquid immersion exposure process. Further, the pre- and post-exposure processing module 600 may perform a process of cleaning the wafer W after exposure. In addition, when the coating process is performed using the chemically amplified resist, the pre- and post-exposure processing module 600 can process the post-exposure bake process.

The pre-exposure post-processing module 600 has a pre-processing module 601 and a post-processing module 602. The pre-processing module 601 processes the wafer W before the exposure process, and the post-processing module 602 processes the wafer W after the exposure process. The pre-processing module 601 and the post-processing module 602 are arranged so as to be partitioned into layers with respect to each other. According to one example, the preprocessing module 601 is located on top of the post-processing module 602. The preprocessing module 601 is provided at the same height as the application module 401. The post-processing module 602 is provided at the same height as the developing module 402. The pretreatment module 601 has a protective film application chamber 610, a bake chamber 620, and a transfer chamber 630. The protective film application chamber 610, the transfer chamber 630, and the bake chamber 620 are sequentially disposed along the second direction 14. The protective film application chamber 610 and the bake chamber 620 are positioned apart from each other in the second direction 14 with the transfer chamber 630 therebetween. A plurality of protective film application chambers 610 are provided and are arranged along the third direction 16 to form layers. Alternatively, a plurality of protective film application chambers 610 may be provided in the first direction 12 and the third direction 16, respectively. A plurality of bake chambers 620 are provided and are disposed along the third direction 16 to form layers. Alternatively, a plurality of bake chambers 620 may be provided in the first direction 12 and the third direction 16, respectively.

The transfer chamber 630 is positioned in parallel with the first cooling chamber 530 of the second buffer module 500 in the first direction 12. In the transfer chamber 630, a pre-processing robot 632 is located. The transfer chamber 630 has a generally square or rectangular shape. The preprocessing robot 632 is connected between the protective film application chambers 610, the bake chambers 620, the buffer 520 of the second buffer module 500 and the first buffer 720 of the interface module 700, The wafer W is transferred. The preprocessing robot 632 has a hand 633, an arm 634, and a support 635. The hand 633 is fixed to the arm 634. The arm 634 is provided with a retractable structure and a rotatable structure. The arm 634 is coupled to the support 635 so as to be linearly movable along the support 635 in the third direction 16.

The protective film applying chamber 610 applies a protective film for protecting the resist film on the wafer W during immersion exposure. The protective film application chamber 610 has a housing 611, a support plate 612, and a nozzle 613. The housing 611 has a cup shape with its top opened. The support plate 612 is located in the housing 611 and supports the wafer W. [ The support plate 612 is rotatably provided. The nozzle 613 supplies a protective liquid for forming a protective film onto the wafer W placed on the support plate 612. The nozzle 613 has a circular tube shape and can supply the protective liquid to the center of the wafer W. [ Alternatively, the nozzle 613 may have a length corresponding to the diameter of the wafer W, and the discharge port of the nozzle 613 may be provided with a slit. In this case, the support plate 612 may be provided in a fixed state. The protective liquid includes a foamable material. The protective liquid may be a photoresist and a material having a low affinity for water. For example, the protective liquid may contain a fluorine-based solvent. The protective film application chamber 610 supplies the protective liquid to the central region of the wafer W while rotating the wafer W placed on the support plate 612.

The bake chamber 620 heat-treats the wafer W coated with the protective film. The bake chamber 620 has a cooling plate 621 or a heating plate 622. The cooling plate 621 is provided with a cooling means 623 such as a cooling water or a thermoelectric element. Or heating plate 622 is provided with a heating means 624, such as a hot wire or a thermoelectric element. The heating plate 622 and the cooling plate 621 may be provided in a single bake chamber 620, respectively. Optionally, some of the bake chambers 620 may have only the heating plate 622, while others may only have the cooling plate 621.

The post-processing module 602 has a cleaning chamber 660, a post-exposure bake chamber 670, and a delivery chamber 680. The cleaning chamber 660, the transfer chamber 680, and the post-exposure bake chamber 670 are sequentially disposed along the second direction 14. Accordingly, the cleaning chamber 660 and the post-exposure baking chamber 670 are positioned apart from each other in the second direction 14 with the transfer chamber 680 therebetween. A plurality of cleaning chambers 660 are provided and may be disposed along the third direction 16 to form layers. Alternatively, a plurality of cleaning chambers 660 may be provided in the first direction 12 and the third direction 16, respectively. A plurality of post-exposure bake chambers 670 are provided and may be disposed along the third direction 16 to form layers. Alternatively, a plurality of post-exposure bake chambers 670 may be provided in the first direction 12 and the third direction 16, respectively.

The transfer chamber 680 is positioned in parallel with the second cooling chamber 540 of the second buffer module 500 in the first direction 12 as viewed from above. The transfer chamber 680 has a generally square or rectangular shape. A post processing robot 682 is located in the transfer chamber 680. The post-processing robot 682 is connected to the cleaning chambers 660, post-exposure bake chambers 670, the second cooling chamber 540 of the second buffer module 500, and the second And carries the wafer W between the buffers 730. The postprocessing robot 682 provided in the postprocessing module 602 may be provided with the same structure as the preprocessing robot 632 provided in the preprocessing module 601. [

The cleaning chamber 660 cleans the wafer W after the exposure process. The cleaning chamber 660 has a housing 661, a support plate 662, and a nozzle 663. The housing 661 has a cup shape with an open top. The support plate 662 is located in the housing 661 and supports the wafer W. [ The support plate 662 is rotatably provided. The nozzle 663 supplies the cleaning liquid onto the wafer W placed on the support plate 662. As the cleaning liquid, water such as deionized water may be used. The cleaning chamber 660 supplies the cleaning liquid to the central region of the wafer W while rotating the wafer W placed on the support plate 662. The nozzle 663 can linearly or rotationally move from the central region to the edge region of the wafer W while the wafer W is selectively rotated.

The post-exposure baking chamber 670 heats the wafer W subjected to the exposure process using deep ultraviolet light. The post-exposure bake step heats the wafer W and amplifies the acid generated in the photoresist by exposure to complete the property change of the photoresist. The post-exposure bake chamber 670 has a heating plate 672. The heating plate 672 is provided with a heating means 674 such as a hot wire or a thermoelectric element. The post-exposure bake chamber 670 may further include a cooling plate 671 therein. The cooling plate 671 is provided with a cooling means 673 such as a cooling water or a thermoelectric element. Further, a bake chamber having only the cooling plate 671 may be further provided.

As described above, the pre-processing module 601 and the post-processing module 602 in the pre-exposure processing module 600 are provided to be completely separated from each other. The transfer chamber 630 of the preprocessing module 601 and the transfer chamber 680 of the postprocessing module 602 are provided in the same size and can be provided so as to completely overlap each other when viewed from above. Further, the protective film application chamber 610 and the cleaning chamber 660 may be provided to have the same size as each other and be provided so as to completely overlap with each other when viewed from above. Further, the bake chamber 620 and the post-exposure bake chamber 670 are provided in the same size, and can be provided so as to completely overlap each other when viewed from above.

(Interface module)

The interface module 700 transfers the wafer W between the exposure pre- and post-processing module 600, the purge module 800, and the exposure apparatus 1000. The interface module 700 has a frame 710, a first buffer 720, a second buffer 730, and an interface robot 740. The first buffer 720, the second buffer 730, and the interface robot 740 are located within the frame 710. The first buffer 720 and the second buffer 730 are spaced apart from each other by a predetermined distance and are stacked on each other. The first buffer 720 is disposed higher than the second buffer 730. The first buffer 720 is positioned at a height corresponding to the preprocessing module 601 and the second buffer 730 is positioned at a height corresponding to the postprocessing module 602. The first buffer 720 is arranged in a line along the first direction 12 with the transfer chamber 630 of the preprocessing module 601 while the second buffer 730 is arranged in the postprocessing module 602, Are arranged in a line along the first direction 12 with the transfer chamber 630 of the transfer chamber 630. [

The interface robot 740 is spaced apart from the first buffer 720 and the second buffer 730 in the second direction 14. The interface robot 740 carries the wafer W between the first buffer 720, the second buffer 730, the purge module 800 and the exposure apparatus 1000. The interface robot 740 has a structure substantially similar to that of the second buffer robot 560.

The first buffer 720 temporarily stores the wafers W processed in the preprocessing module 601 before they are transferred to the exposure apparatus 1000. The second buffer 730 temporarily stores the processed wafers W in the exposure apparatus 1000 before they are transferred to the post-processing module 602. The first buffer 720 has a housing 721 and a plurality of supports 722. The supports 722 are disposed within the housing 721 and are provided spaced apart from each other in the third direction 16. One wafer W is placed on each support 722. The housing 721 is movable in the direction in which the interface robot 740 is provided and in the direction in which the interface robot 740 and the preprocessing robot 632 transfer the wafer W to and from the support table 722, 632 are provided with openings (not shown) in the direction in which they are provided. The second buffer 730 has a structure substantially similar to that of the first buffer 720. However, the housing 4531 of the second buffer 730 has an opening (not shown) in the direction in which the interface robot 740 is provided and in a direction in which the postprocessing robot 682 is provided. The interface module may be provided with only buffers and robots as described above without providing a chamber to perform a predetermined process on the wafer.

(Fuzzy module)

The purge module 800 may be disposed within the interface module 700. Specifically, the fuzzy module 800 may be disposed at a position facing the first buffer 720 around the interface robot 740. The fuzzy module 800 may be provided at various positions such as a position where the exposure apparatus 1000 at the rear end of the interface module 700 is connected or a side of the interface module 700. The purge module 800 performs a gas purging process and a rinsing process on the wafer to which the protective film for protecting the photoresist is applied in the pre- and post-exposure processing module 600.

5 is a cross-sectional view showing the liquid processing chamber.

The liquid processing chamber 801 may be a chamber for processing the substrate through the processing liquid, such as a resist application chamber 410, a post-exposure processing chamber 800, or the like. The treatment liquid may be a sensitizing solution, a developer, or the like.

5, the liquid processing chamber 801 includes a substrate support unit 810, a processing vessel 820, a lift unit 840, a liquid supply unit 870, a heating unit 910, and a controller 890. [ .

The substrate supporting unit 810 supports and rotates the substrate W. The substrate support unit 810 includes a support plate 812, a driver 815, and a vacuum member 818. The support plate 812 supports the substrate. The support plate 812 is provided to have a circular plate shape. On the outside of the bottom surface of the support plate 812, a guide portion 812a having a larger circumference at the upper end than the lower end is formed. For example, the guide portion 812a may be formed so as to be inclined toward the outer side from the bottom to the top.

The upper surface of the support plate 812 is provided as a seating surface on which the substrate W is seated. The seating surface has an area smaller than that of the substrate W. The seating surface supports the central region of the substrate W. A plurality of suction holes 816 are formed on the seating surface. The suction hole 816 may be a hole 816 for depressurizing the substrate placed on the seating surface to adsorb the substrate. A vacuum member 818 is connected to the suction hole 816. According to one example, the diameter of the seating surface may be smaller than the radius of the substrate W. [ The vacuum member 818 may be a pump for depressurizing the adsorption holes 816.

The actuator 815 is connected to the support plate 812 via a shaft to rotate the support plate 812. A tubular hollow shaft 814 can be located outside the shaft.

The rotating speed of the rotating shaft 814 is adjusted by a driving unit 815 so that the rotating speed of the substrate W can be adjusted. For example, the driver 815 may be a motor.

The processing vessel 820 provides a processing space in which processing is performed through the processing liquid. The treatment vessel 820 recovers the treatment liquid used in the process. The processing vessel 820 can also discharge fumes generated during the process. The processing vessel 820 is provided in the form of a cup having an open top. The processing vessel 820 includes an inner recovery cylinder 822 and an outer recovery cylinder 826. Each of the recovery cylinders 822 and 826 recovers liquids of different kinds from each other. The inner recovery cylinder 822 is provided in an annular ring shape surrounding the substrate support member 810 and the outer recovery cylinder 826 is provided in an annular ring shape surrounding the inner recovery cylinder 822. Each of the inner space 822a of the inner recovery cylinder 822 and the space 826a between the outer recovery cylinder 826 and the inner recovery cylinder 822 are respectively connected to the inner recovery cylinder 822 and the outer recovery cylinder 826, And serves as an inflow port. Recovery bins 822b and 826b extending perpendicularly to the bottom of the recovery bins 822 and 826 are connected to the recovery bins 822 and 826, respectively. Each of the recovery lines 822b and 826b separates and discharges the liquid introduced through each of the recovery cans 822 and 826. [ The discharged liquid can be reused through an external treatment liquid regeneration system (not shown).

The lift unit 840 adjusts the relative height between the processing container 820 and the substrate supporting unit 810. For example, the elevating unit 840 can move the processing vessel 820 in the vertical direction. The lifting unit 840 includes a bracket 842, a moving shaft 844, and a driver 846. The bracket 842 connects the processing vessel 820 and the moving shaft 844. The bracket 842 is fixed to the vertical wall 822 of the processing vessel 820. The moving shaft 844 is provided such that its longitudinal direction is directed up and down. The upper end of the moving shaft 844 is fixedly coupled to the bracket 842. The moving shaft 844 is moved up and down by the actuator 846 and the processing vessel 820 is movable up and down together with the moving shaft 844. [ For example, the actuator 846 may be a cylinder or a motor.

The liquid supply unit 870 supplies liquid onto the substrate W supported by the substrate support unit 810. The liquid supply unit 870 includes a nozzle arm 872 and a nozzle 874.

At one end of the nozzle arm 872, a nozzle 874 is positioned. The nozzle 874 sprays the treatment liquid onto the substrate W placed on the support plate 812. [ One end of the nozzle arm 872 can cause the nozzle 874 to move between the process position and the standby position. Here, the process position is a position in which the nozzle 874 is vertically opposed to the substrate W, and the standby position is a position out of the process position.

The cleaning nozzle 830 is provided to be positioned below the support plate 812. The cleaning nozzle 830 is positioned so as to be spaced apart from the bottom surface of the support plate 812 by a predetermined distance and injects a cleaning fluid toward the bottom surface of the support plate 812. The cleaning fluid may be pure. The cleaning nozzle 830 is provided to jet the clean fluid toward the guide portion 812a. The cleaning nozzle 830 is located on the arm 831 and the arm 831 can be connected to the hollow shaft 814.

The heating unit 910 heats the substrate W. [ Thus, the substrate W can be heat-treated before or after the treatment with the treatment liquid in one chamber.

The heating unit 910 includes a heating plate 912 and an elevating member 916.

The heating unit 910 heats the substrate W. [ The heating unit 910 is positioned below the substrate W.

The heating plate 912 is provided in an annular ring shape surrounding the support plate 812. The heating plate 912 may have the same outer diameter as the substrate W or may be provided larger than the outer diameter. The heating plate 912 may have an inner diameter equal to or greater than the bottom diameter of the support plate 812. The elevating member 916 adjusts the relative height between the heating plate 912 and the substrate W.

The controller 890 controls the configuration of the liquid processing chamber 801.

FIG. 6 is a view showing a state in which the cleaning of the processing vessel is performed according to the upper cleaning step, and FIG. 7 is a diagram showing a state in which the processing vessel is cleaned in accordance with the lower cleaning step.

6 and 7, the cleaning nozzle 830 supplies the cleaning fluid to the processing vessel 820 via the support plate 812 to clean the processing vessel 820. [

The cleaning nozzle 830 ejects the cleaning fluid toward the guide portion 812a of the support plate 812. [ The cleaning fluid jetted to the guide portion 812a collides with the guide portion 812a and is supplied toward the processing container 820 by the shape of the guide portion 812a.

The support plate 812 is rotated at at least two different speeds while the cleaning fluid is being injected. In the upper cleaning stage, the controller 890 rotates the support plate 812 at an upper cleaning speed. As the cleaning fluid is rotated on the support plate 812, the cleaning fluid injected to the support plate 812 additionally receives a force that is scattered outward by the rotating support plate 812. The upper cleaning speed is set so that the cleaning fluid ejected to the support plate 812 can be scattered to the upper portion outside the support plate 812. [ Accordingly, in the upper cleaning step, the cleaning fluid can be scattered in the upper upward direction to perform cleaning of the processing vessel 820. In the upper cleaning stage, the processing vessel 820 can be lifted up and down. Accordingly, when the upper cleaning step is performed in a state where the inner space 822a is located on the side surface of the support plate 812, the cleaning fluid can mainly clean the upper lower surface portion of the inner recovery tube 822. [ Further, when the upper cleaning step is performed while the interspace 826a is located on the side surface of the support plate 812, the cleaning fluid can mainly clean the lower portion of the external recovery cylinder 826. [

In the lower cleaning step, the controller 890 rotates the support plate 812 at the lower cleaning speed. The lower cleaning speed is set to be smaller than the upper cleaning speed. Therefore, the cleaning fluid sprayed on the support plate 812 can be scattered in the outer lower direction with a force smaller than that of the upper cleaning, so that the cleaning of the processing vessel 820 can be performed.

In the lower cleaning step, the processing vessel 820 can be lifted up and down. Therefore, when the lower cleaning step is performed in a state where the inner space 822a is located on the side surface of the support plate 812, the cleaning fluid can mainly clean the lower upper surface portion of the inner recovery tube 822. [ Further, when the lower cleaning step is performed in a state where the interspace 826a is located on the side of the support plate 812, the cleaning fluid can mainly clean the upper surface portion of the inner recovery tube 822. [

According to the present invention, in the course of processing the substrate through the processing solution, particle elements such as fumes attached to the processing vessel 820 can be removed by cleaning. Thus, thereafter, the substrate can be prevented from being contaminated by the particles in processing the substrate. Further, the cleaning of the processing vessel 820 can be efficiently performed even in the absence of the substrate on the supporting plate 812.

The foregoing detailed description is illustrative of the present invention. In addition, the foregoing is intended to illustrate and explain the preferred embodiments of the present invention, and the present invention may be used in various other combinations, modifications, and environments. That is, it is possible to make changes or modifications within the scope of the concept of the invention disclosed in this specification, within the scope of the disclosure, and / or within the skill and knowledge of the art. The embodiments described herein are intended to illustrate the best mode for implementing the technical idea of the present invention and various modifications required for specific applications and uses of the present invention are also possible. Accordingly, the detailed description of the invention is not intended to limit the invention to the disclosed embodiments. It is also to be understood that the appended claims are intended to cover such other embodiments.

100: Load port 200: Index module
300: first buffer module 400: application and development module
500: second buffer module 600: pre-exposure processing module
700: Interface module

Claims (12)

A support plate for supporting the processed substrate;
A driver connected to the support plate through an axis to provide power to rotate the support plate;
A processing vessel positioned around the support plate;
A cleaning nozzle located below the support plate for spraying a cleaning fluid for cleaning the processing container;
And a liquid supply unit for supplying the treatment liquid to the substrate,
Wherein the support plate has a guide portion provided on an outer side of a bottom surface of the support plate so as to be inclined so that a circumference of an upper end thereof is larger than a lower end thereof,
Wherein the cleaning nozzle is provided so that the sprayed cleaning fluid faces the guide portion,
Wherein the support plate is provided in a state of not supporting the substrate when the cleaning fluid is ejected. The method according to claim 1,
Further comprising a controller for controlling the actuator such that the support plate is rotated while the cleaning fluid is being injected. 3. The method of claim 2,
Wherein the controller controls the actuator such that the rotational speed of the support plate is rotated at at least two different speeds while the cleaning fluid is being injected. delete The method according to claim 1,
Wherein an upper surface of the support plate has a smaller area than the substrate. 6. The method of claim 5,
And a suction hole for sucking the substrate is formed on the upper surface of the support plate. The method according to claim 1,
Further comprising a tubular hollow shaft located outside said shaft,
Wherein the cleaning nozzle is located in an arm connected to the hollow shaft. Spraying a cleaning fluid onto a bottom surface of a support plate supporting the substrate;
Scattering the cleaning fluid to the outside of the support plate to clean the processing vessel located around the support plate,
Wherein the cleaning fluid comprises:
And is directed to a guide portion provided on an underside of the support plate so as to be inclined so as to have a larger circumference at the upper end than the lower end,
Wherein the support plate is provided in a state of not supporting the substrate when the cleaning fluid is ejected. 9. The method of claim 8,
Wherein the support plate is provided in a rotated state when the cleaning fluid is ejected. 10. The method of claim 9,
Wherein the rotational speed of the support plate is changed to at least two different speeds when the cleaning fluid is ejected. 10. The method of claim 9,
Wherein the height of the processing vessel relative to the support plate changes when the cleaning fluid is ejected. delete

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