KR101914483B1 - Apparatus for heating substrate - Google Patents

Abstract

The present invention provides an apparatus for heating a substrate. An apparatus for heating a substrate includes a housing having a processing space therein, a substrate support unit having a support surface on which the substrate is supported in the processing space, and a substrate positioned in the processing space, Wherein the substrate support unit includes a support plate having the support surface on an upper surface thereof and having a plurality of vacuum holes formed in the support surface, a support plate fixedly coupled to the support surface, A support pin for supporting the substrate, a vacuum pipe located in the support plate and connected to the vacuum holes, and a pressure-reducing member for depressurizing the vacuum pipe. Therefore, even if warpage is generated on the substrate, the substrate can be supported flat on the support plate.

Description

[0001] Apparatus for heating substrate [0002]

The present invention relates to an apparatus for heat-treating a substrate.

Various processes such as cleaning, deposition, photolithography, etching, and ion implantation are performed to manufacture semiconductor devices. In these processes, a coating process is used as a process of forming a liquid film on a substrate. In general, the application step is a step of applying a treatment liquid onto a substrate to form a liquid film.

Before and after forming a liquid film on the substrate, a baking process for baking the substrate is performed. The baking process is a process of heating the substrate at a process temperature or higher in an enclosed space, which blows organic substances on the liquid film to stabilize the liquid film. This baking process requires that the entire area of the substrate be heated to a uniform temperature, depending on the process. However, warpage, which is bent as the distance from the center of the substrate on which the liquid film is formed, is generated. The warpage of the substrate becomes worse as the film formed on the substrate becomes thicker.

1 is a cross-sectional view of a general baking apparatus. Referring to FIG. 1, the bake apparatus includes a support plate 2 and a heater 4. The upper surface of the support plate 2 is provided with a support surface on which the substrate W is placed, and the heater 4 is provided on the support plate 2. A plurality of heaters (4) are positioned on the same plane in the support plate (2).

However, the substrate W on which the warpage is generated has a height different from that of the central region and the edge region, and the distance between the substrate W and the heater 4 is different. As a result, the central region and the edge region of the substrate W are heated to different temperatures, which causes a bake defect.

Accordingly, there has been proposed a method of holding a substrate in a flat state by vacuum adsorption of a substrate, but vacuum piping and valves for vacuum adsorption of the substrate are thermally deformed by a heater, and the vacuum adsorption of the substrate can not be properly performed.

Korean Published Patent Application No. 2002-0020847

The present invention seeks to provide an apparatus and a method capable of uniformly baking an entire region of a substrate.

The present invention seeks to provide an apparatus and method that can prevent each region of a substrate from being unevenly baked due to warpage of the substrate.

The present invention intends to provide an apparatus and a method for heat-treating a vacuum-adsorbed substrate on a support plate.

An embodiment of the present invention provides an apparatus for heating a substrate. An apparatus for heating a substrate includes a housing having a processing space therein, a substrate support unit having a support surface on which the substrate is supported in the processing space, and a substrate positioned in the processing space, Wherein the substrate support unit includes a support plate having the support surface on an upper surface thereof and having a plurality of vacuum holes formed in the support surface, a support plate fixedly coupled to the support surface, A support pin for supporting the substrate, a vacuum pipe located in the support plate and connected to the vacuum holes, and a pressure-reducing member for depressurizing the vacuum pipe.

The first heating member may be located in the processing space excluding the substrate supporting unit. The first heating member may be positioned above the support surface to face the support surface. The vacuum holes may be formed in each of the central region and the edge region of the support surface. The apparatus further comprises an exhaust unit for exhausting the atmosphere of the processing space, wherein the exhaust unit includes an exhaust pipe positioned to pass through the upper wall of the housing, an exhaust member for decompressing the exhaust pipe, And an airflow guide plate fixed to the exhaust pipe and having a through hole into which the exhaust pipe is inserted, wherein the first heating member can be coupled to the airflow guide plate. The first heating member may include a lamp that emits light to the substrate supported on the support surface.

In another embodiment of the present invention, an apparatus for heating a substrate includes a housing having a processing space therein, a substrate support unit having a support surface on which the substrate is supported in the processing space, A first heating member located in the processing space facing the substrate and heating the substrate supported on the support surface to a process temperature and a substrate supported on the support surface below the support surface at a compensation temperature lower than the process temperature Wherein the substrate supporting unit includes a supporting plate having the supporting surface on an upper surface thereof and having a plurality of vacuum holes formed in the supporting surface, a fixing plate fixedly coupled to the supporting surface, A support pin protruding to support the substrate, a vacuum pipe positioned in the support plate and connected to the vacuum holes, Comprising a pressure-sensitive member which reduce the pressure in the pipe hole, and the second heating member is provided on the support plate.

The vacuum holes may be formed in each of the central region and the edge region of the support surface. The apparatus further includes an exhaust unit for exhausting the atmosphere of the processing space, wherein the exhaust unit includes an exhaust pipe positioned to pass through an upper wall of the housing, an exhaust member for decompressing the exhaust pipe, And the first heating member may be coupled to the airflow guide plate. The airflow guide plate includes a through hole into which the exhaust pipe is inserted. The first heating member may include a lamp that irradiates light to the substrate supported on the support surface.

According to the embodiment of the present invention, the substrate is vacuum-adsorbed on the support plate. Therefore, even if warpage is generated on the substrate, the substrate can be supported flat on the support plate.

According to the embodiment of the present invention, the first heating member for heating the substrate to the process temperature is located in a region other than the support plate. As a result, it is possible to prevent the vacuum pipe and the pressure-reducing member, which are located on the support plate, from being thermally deformed due to heat to heat the substrate.

Further, according to the embodiment of the present invention, the second heating member provided on the support plate heats the substrate to a compensation temperature lower than the process temperature. The compensation temperature is provided at a temperature lower than the thermal deformation temperature of the vacuum pipe and the pressure-sensitive member, so that the vacuum pipe and the pressure-sensitive member can be prevented from being thermally deformed by the compensation temperature.

1 is a cross-sectional view showing a process of heat-treating a substrate having warpage.
2 is a plan view showing a substrate processing apparatus according to an embodiment of the present invention.
Fig. 3 is a view of the equipment of Fig. 2 viewed from the direction AA.
Fig. 4 is a view of the equipment of Fig. 2 viewed from the BB direction. Fig.
Fig. 5 is a view of the equipment of Fig. 2 viewed from the CC direction.
Fig. 6 is a cross-sectional view showing the substrate heating apparatus of Fig. 2;
7 is a plan view showing the substrate support unit of Fig.
8 is a cross-sectional view showing a further enlarged view of the substrate supporting unit of Fig.
FIG. 9 is a bottom view of the first heating member of FIG. 6; FIG.
FIGS. 10 and 11 are views showing a state in which the substrate is supported by the substrate supporting unit of FIG. 8. FIG.
12 is a cross-sectional view showing another embodiment of the substrate heating apparatus of FIG.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be construed as being limited to the following embodiments. This embodiment is provided to more fully describe the present invention to those skilled in the art. Thus, the shape of the elements in the figures has been exaggerated to emphasize a clearer description.

The facilities of this embodiment can be used to perform a photolithography process on a substrate such as a semiconductor wafer or a flat panel display panel. In particular, the apparatus of this embodiment can be used to perform a coating process and a developing process on a substrate, which is connected to an exposure apparatus. However, the present embodiment is applicable to various apparatuses in which an airflow is formed in a closed substrate processing space. Hereinafter, a case where a circular wafer is used as the substrate will be described as an example.

FIG. 2 is a plan view showing a substrate processing facility according to an embodiment of the present invention, FIG. 3 is a view of the facility of FIG. 2 viewed from the direction AA, FIG. 4 is a view of the facility of FIG. Is a view of the equipment of Fig. 2 viewed from the CC direction. 2 to 5, the substrate processing apparatus 1 includes a load port 100, an index module 200, a first buffer module 300, a coating and developing module 400, a second buffer module 500, an exposure pre- and post-processing module 600, and an interface module 700. The load port 100, the index module 200, the first buffer module 300, the application and development module 400, the second buffer module 500, the pre-exposure processing module 600, and the interface module 700, Are sequentially arranged in one direction in a single direction.

Hereinafter, the load port 100, the index module 200, the first buffer module 300, the coating and developing module 400, the second buffer module 500, the pre-exposure processing module 600, 700 are referred to as a first direction 12 and a direction perpendicular to the first direction 12 as viewed from above is referred to as a second direction 14 and a direction in which the first direction 12 and the second And a direction perpendicular to the direction 14 is referred to as a third direction 16.

The substrate W is moved in a state accommodated in the cassette 20. At this time, the cassette 20 has a structure that can be sealed from the outside. For example, as the cassette 20, a front open unified pod (FOUP) having a door at the front can be used.

Hereinafter, the load port 100, the index module 200, the first buffer module 300, the application and development module 400, the second buffer module 500, the pre-exposure processing module 600, 700 will be described in detail.

The load port 100 has a mounting table 120 on which the cassette 20 accommodating the substrates W is placed. A plurality of mounts 120 are provided, and the mounts 200 are arranged in a line along the second direction 14. [ In Fig. 2, four placement tables 120 are provided.

The index module 200 transfers the substrate W between the cassette 20 placed on the table 120 of the load port 100 and the first buffer module 300. The index module 200 has a frame 210, an index robot 220, and a guide rail 230. The frame 210 is provided generally in the shape of an inner rectangular parallelepiped and is disposed between the load port 100 and the first buffer module 300. The frame 210 of the index module 200 may be provided at a lower height than the frame 310 of the first buffer module 300 described later. The index robot 220 and the guide rail 230 are disposed within the frame 210. The index robot 220 is moved in the first direction 12, the second direction 14 and the third direction 16 so that the hand 221 that directly handles the substrate W can be moved and rotated in the first direction 12, the second direction 14, . The index robot 220 has a hand 221, an arm 222, a support 223, and a pedestal 224. The hand 221 is fixed to the arm 222. The arm 222 is provided with a stretchable structure and a rotatable structure. The support base 223 is disposed along the third direction 16 in the longitudinal direction. The arm 222 is coupled to the support 223 to be movable along the support 223. The support 223 is fixedly coupled to the pedestal 224. The guide rails 230 are provided so that their longitudinal direction is arranged along the second direction 14. The pedestal 224 is coupled to the guide rail 230 so as to be linearly movable along the guide rail 230. Further, although not shown, the frame 210 is further provided with a door opener for opening and closing the door of the cassette 20.

The first buffer module 300 has a frame 310, a first buffer 320, a second buffer 330, a cooling chamber 350, and a first buffer robot 360. The frame 310 is provided in the shape of an inner rectangular parallelepiped and is disposed between the index module 200 and the application and development module 400. The first buffer 320, the second buffer 330, the cooling chamber 350, and the first buffer robot 360 are located within the frame 310. The cooling chamber 350, the second buffer 330, and the first buffer 320 are sequentially disposed in the third direction 16 from below. The second buffer 330 and the cooling chamber 350 are located at a height corresponding to the coating module 401 of the coating and developing module 400 described later and the coating and developing module 400 at a height corresponding to the developing module 402. [ The first buffer robot 360 is spaced apart from the second buffer 330, the cooling chamber 350 and the first buffer 320 by a predetermined distance in the second direction 14.

The first buffer 320 and the second buffer 330 temporarily store a plurality of substrates W, respectively. The second buffer 330 has a housing 331 and a plurality of supports 332. The supports 332 are disposed within the housing 331 and are provided spaced apart from each other in the third direction 16. One substrate W is placed on each support 332. The housing 331 is constructed so that the index robot 220, the first buffer robot 360 and the developing robot 482 of the developing module 402 described later mount the substrate W on the support 332 in the housing 331 (Not shown) in the direction in which the index robot 220 is provided, in the direction in which the first buffer robot 360 is provided, and in the direction in which the developing robot 482 is provided, so that the developing robot 482 can carry it in or out. The first buffer 320 has a structure substantially similar to that of the second buffer 330. The housing 321 of the first buffer 320 has an opening in a direction in which the first buffer robot 360 is provided and in a direction in which the application unit robot 432 located in the application module 401 described later is provided. The number of supports 322 provided in the first buffer 320 and the number of supports 332 provided in the second buffer 330 may be the same or different. According to one example, the number of supports 332 provided in the second buffer 330 may be greater than the number of supports 322 provided in the first buffer 320.

The first buffer robot 360 transfers the substrate W between the first buffer 320 and the second buffer 330. The first buffer robot 360 has a hand 361, an arm 362, and a support base 363. The hand 361 is fixed to the arm 362. The arm 362 is provided in a stretchable configuration so that the hand 361 is movable along the second direction 14. The arm 362 is coupled to the support 363 so as to be linearly movable along the support 363 in the third direction 16. The support base 363 has a length extending from a position corresponding to the second buffer 330 to a position corresponding to the first buffer 320. The support member 363 may be provided longer in the upward or downward direction. The first buffer robot 360 may be provided so that the hand 361 is simply driven in two directions along the second direction 14 and the third direction 16.

The cooling chamber 350 cools the substrate W, respectively. The cooling chamber 350 has a housing 351 and a cooling plate 352. The cooling plate 352 has an upper surface on which the substrate W is placed and a cooling means 353 for cooling the substrate W. [ As the cooling means 353, various methods such as cooling with cooling water and cooling using a thermoelectric element can be used. In addition, the cooling chamber 350 may be provided with a lift pin assembly (not shown) for positioning the substrate W on the cooling plate 352. The housing 351 is provided with an index robot 220 so that the developing robot 482 provided in the index robot 220 and a developing module 402 to be described later can carry the substrate W into or out of the cooling plate 352 (Not shown) in the direction provided and the direction in which the developing robot 482 is provided. Further, the cooling chamber 350 may be provided with doors (not shown) for opening and closing the above-described opening.

The application and development module 400 performs a process of applying a photoresist on the substrate W before the exposure process and a process of developing the substrate W after the exposure process. The application and development module 400 has a generally rectangular parallelepiped shape. The coating and developing module 400 has a coating module 401 and a developing module 402. The application module 401 and the development module 402 are arranged so as to be partitioned into layers with respect to each other. According to one example, the application module 401 is located on top of the development module 402.

The application module 401 includes a process of applying a photosensitive liquid such as a photoresist to the substrate W and a heat treatment process such as heating and cooling for the substrate W before and after the resist application process. The application module 401 has a resist application unit 410, a bake unit 420, and a transfer chamber 430. The resist application unit 410, the bake unit 420, and the transfer chamber 430 are sequentially disposed along the second direction 14. [ The resist coating unit 410 and the bake unit 420 are positioned apart from each other in the second direction 14 with the transfer chamber 430 therebetween. A plurality of resist coating units 410 are provided, and a plurality of resist coating units 410 are provided in the first direction 12 and the third direction 16, respectively. In the drawing, an example in which six resist application units 410 are provided is shown. A plurality of bake units 420 are provided in the first direction 12 and the third direction 16, respectively. In the drawing, an example in which six bake units 420 are provided is shown. Alternatively, however, the bake unit 420 may be provided in more or less numbers.

The transfer chamber 430 is positioned in parallel with the first buffer 320 of the first buffer module 300 in the first direction 12. In the transfer chamber 430, a dispenser robot 432 and a guide rail 433 are positioned. The transfer chamber 430 has a generally rectangular shape. The application unit robot 432 is connected to the bake units 420, the resist application units 400, the first buffer 320 of the first buffer module 300 and the first buffer unit 500 of the second buffer module 500 And transfers the substrate W between the cooling chambers 520. The guide rails 433 are arranged so that their longitudinal directions are parallel to the first direction 12. The guide rails 433 guide the applying robot 432 to move linearly in the first direction 12. The applicator robot 432 has a hand 434, an arm 435, a support 436, and a pedestal 437. The hand 434 is fixed to the arm 435. The arm 435 is provided in a stretchable configuration so that the hand 434 is movable in the horizontal direction. The support 436 is provided so that its longitudinal direction is disposed along the third direction 16. The arm 435 is coupled to the support 436 so as to be linearly movable in the third direction 16 along the support 436. The support 436 is fixedly coupled to the pedestal 437 and the pedestal 437 is coupled to the guide rail 433 so as to be movable along the guide rail 433.

The resist coating units 410 all have the same structure. However, the types of the sensitizing solution used in the respective resist coating units 410 may be different from each other. For example, a chemical amplification resist may be used as the sensitizing solution. The resist coating unit 410 applies the photosensitive liquid onto the substrate W. [ The resist coating unit 410 has a housing 411, a support plate 412, and a nozzle 413. The housing 411 has a cup shape with an open top. The support plate 412 is located in the housing 411 and supports the substrate W. [ The support plate 412 is rotatably provided. The nozzle 413 supplies the sensitizing solution onto the substrate W placed on the support plate 412. The nozzle 413 has a circular tube shape and can supply the photosensitive liquid to the center of the substrate W. [ Alternatively, the nozzle 413 may have a length corresponding to the diameter of the substrate W, and the discharge port of the nozzle 413 may be provided as a slit. In addition, the resist coating unit 410 may further be provided with a nozzle 414 for supplying a cleaning liquid such as deionized water to clean the surface of the substrate W on which the photosensitive liquid is applied.

The bake unit 800 heat-treats the substrate W. The bake unit 800 heat-treats the substrate W before and after applying the photosensitive liquid. The bake unit 800 can heat the substrate W to a predetermined temperature so as to change the surface properties of the substrate W before applying the photosensitive liquid and form a process liquid film such as an adhesive on the substrate W have. The bake unit 800 can heat-treat the photosensitive liquid film in a reduced-pressure atmosphere on the substrate W coated with the photosensitive liquid. The volatile substance contained in the photosensitive liquid film can be volatilized. In this embodiment, the bake unit 800 is described as a unit for performing the heat treatment on the photosensitive liquid film.

The bake unit 800 includes a cooling plate 820 and a heating unit 1000. The cooling plate 820 cools the substrate W heated by the heating unit 1000. The cooling plate 820 is provided in the shape of a circular plate. Inside the cooling plate 820, cooling means such as cooling water or a thermoelectric element are provided. For example, the substrate W placed on the cooling plate 820 may be cooled to a temperature equal to or close to ambient temperature.

The heating unit 1000 heats the substrate W in a reduced pressure atmosphere at a normal pressure or lower. The heating unit 1000 is provided to the substrate heating apparatus 1000 for heating the substrate W. [ Fig. 6 is a cross-sectional view showing the substrate heating apparatus of Fig. 2; 6, the heating unit 1000 includes a housing 1100, a substrate supporting unit 1200, an exhaust unit 1500, and a heating unit 1400.

The housing 1100 provides a processing space 1110 for heat-treating the substrate W therein. The processing space 1110 is provided with an outer and an interrupted space. The housing 1100 includes an upper body 1120, a lower body 1140, and a sealing member 1160.

The upper body 1120 is provided in a cylindrical shape with its bottom opened. A center hole 1122 and a peripheral hole 1124 are formed on the upper surface of the upper body 1120. The center hole 1122 is formed at the center of the upper body 1120. The center hole 1122 functions as an exhaust hole 1122 through which the atmosphere of the process space 1110 is exhausted. The peripheral holes 1124 are provided in a plurality of locations and are formed at positions deviated from the center of the upper body 1120. The peripheral holes 1124 function as an inlet hole 1124 through which the external air flows into the processing space 1110. The peripheral holes 1124 are positioned to surround the center hole 1122. The peripheral holes 1124 are spaced apart from each other along the circumferential direction. According to one example, the number of the peripheral holes 1124 may be four. The external air flow may be air.

Alternatively, the peripheral holes 1124 may be provided in three or more than five. The external airflow may also be an inert gas.

The lower body 1140 is provided in a cylindrical shape with its top opened. The lower body 1140 is positioned below the upper body 1120. [ The upper body 1120 and the lower body 1140 are positioned to face each other in the vertical direction. The upper body 1120 and the lower body 1140 are combined with each other to form a processing space 1110 therein. The upper body 1120 and the lower body 1140 are positioned such that their central axes coincide with each other with respect to the vertical direction. The lower body 1140 may have the same diameter as the upper body 1120. That is, the upper end of the lower body 1140 may be positioned opposite to the lower end of the upper body 1120.

One of the upper body 1120 and the lower body 1140 is moved to the open position and the shutoff position by the lifting member 1130 and the other is fixed in position. According to an example, the lower body 1140 is fixed in position, and the upper body 1120 can be moved between the open position and the shutoff position by the lifting member 1130. [ Here, the open position is a position where the processing space 1110 is opened by separating the upper body 1120 and the lower body 1140 from each other. The cutoff position is a position where the processing space 1110 is sealed from the outside by the lower body 1140 and the upper body 1120.

A sealing member 1160 is positioned between the upper body 1120 and the lower body 1140. The sealing member 1160 seals a gap between the upper body 1120 and the lower body 1140. The sealing member 1160 may be an O-ring member 1160 having an annular ring shape. The sealing member 1160 may be fixedly coupled to the upper end of the lower body 1140.

The substrate supporting unit 1300 supports the substrate W in the processing space 1110. [ The substrate supporting unit 1300 is fixedly coupled to the lower body 1140. Fig. 7 is a plan view showing the substrate supporting unit of Fig. 6, and Fig. 8 is a sectional view showing a further enlarged view of the substrate supporting unit of Fig. 7 and 8, the substrate supporting unit 1300 includes a support plate 1320, a lift pin 1340, a support pin 1330, a vacuum pipe 1360, and a pressure-reducing member 1380. [ The support plate 1320 is provided in the shape of a circular plate. The upper surface of the support plate 1320 serves as a support surface for supporting the substrate W. [ The supporting surface has a larger diameter than the substrate W. A plurality of pin holes 1322 and a plurality of vacuum holes 1324 are formed on the support surface. Pin holes 1322 and vacuum holes 1324 are located in different areas of the support surface. According to one example, pinholes 1322 may be formed in the central region of the support surface, and vacuum holes 1324 may be formed in each of the central region and the edge region of the support surface. The support plate 1320 may be provided with a material containing aluminum nitride (AlN).

The pin holes 1322 are arranged to surround the center of the support surface when viewed from above. Each of the pin holes 1322 is arranged to be spaced apart from each other along the circumferential direction. The pin holes 1322 are spaced at equal intervals from each other. Each pin hole 1322 is provided with a lift pin 1340. The lift pin 1340 is movable up and down so that the upper end thereof protrudes or is inserted from the pin hole 1322. The lift pin 1340 lifts the substrate W from the support plate 1320 or seats the substrate W on the support plate 1320. For example, pin holes 1322 may be provided in three.

Support pins 1330 are provided on the upper surface of the support surface. A plurality of support pins 1330 are provided and fixedly coupled to the support surface. The support pins 1330, the vacuum holes 1324, and the pin holes 1322 are positioned so as not to overlap with each other. That is, the support pins 1330, the vacuum holes 1324, and the pin holes 1322 are located in different areas. The support pin 1330 is provided so as to protrude upward from the support surface. Thus, when the substrate W is placed on the support pin 1330, the substrate W and the support surface are spaced apart and are formed in the space between the substrate W and the support surface. Support pins 1330 are evenly distributed over the entire area of the support surface.

Vacuum line 1360 is located within support plate 1320. A plurality of vacuum tubes 1360 are provided, each extending from a vacuum hole 1324 to correspond one-to-one with vacuum holes 1324. A plurality of vacuum pipes 1360 are integrated with one integrated pipe 1370. A valve 1372 and a pressure reducing member 1380 are installed in the integrated pipe 1370. The valve 1372 opens and closes the integrated pipe 1370, and the pressure reducing member 1380 decompresses the integrated pipe 1370. As a result, the vacuum hole 1324 and the vacuum pipe 1360 are depressurized, and the space between the substrate W placed on the support pins 1330 and the support surface is reduced in pressure. By the decompression of the pressure-reducing member 1380, the central region and the edge region of the substrate W can maintain a flat state having the same height.

The exhaust unit 1500 exhausts the processing space 1110. The exhaust unit 1500 includes an exhaust pipe 1520, an exhaust member 1540, and an airflow guide plate 1560. The exhaust pipe 1520 is provided in a tubular shape with both open ends. The exhaust pipe 1520 is provided such that its longitudinal direction is directed up and down. The exhaust pipe 1520 is fixedly coupled to the upper body 1120. The exhaust pipe 1520 is positioned to penetrate the center hole 1122 of the upper body 1120. The exhaust pipe 1520 is located in the processing space 1110 with the lower region including the lower end and the upper region including the upper portion is located outside the processing space 1110. That is, the upper end of the exhaust pipe 1520 is positioned higher than the upper body 1120. An exhaust member 1540 is connected to the exhaust pipe 1520. The exhaust member 1540 reduces the exhaust pipe 1520. Accordingly, the processing space 1110 can be exhausted through the exhaust pipe 1520.

The airflow guide plate 1560 guides the flow direction of the airflow entering the processing space 1110. The airflow guide plate 1560 guides the flow direction of the airflow in the processing space 1110. The airflow guide plate 1560 is provided in a plate shape having a through hole 1620. The through hole 1620 is formed at the center of the airflow guide plate 1560. The airflow guide plate 1560 is located above the first support plate 1322 in the processing space 1110. The airflow guide plate 1560 corresponds to the lower end of the upper body 1120 or is located at a higher height than the lower end of the upper body 1120. The airflow guide plate 1560 is positioned to face the support plate 1320. The airflow guide plate 1560 is positioned so that the exhaust pipe 1520 is inserted into the through hole 1620. For example, the through hole 1620 may have the same diameter as the exhaust pipe 1520. The exhaust pipe 1520 is inserted into the through hole 1620 of the airflow guide plate 1560. The airflow guide plate 1560 is fixedly coupled to the lower end of the exhaust pipe 1520. The airflow guide plate 1560 is provided so as to have an outer diameter smaller than the inner diameter of the upper body 1120. Accordingly, a gap is formed between the side surface of the airflow guide plate 1560 and the inner surface of the upper body 1120. The airflow introduced into the processing space 1110 is guided in the flow direction by the airflow guide plate 1560, and is supplied through the gap. According to one example, the airflow guide plate 1560 may be overlapped with the peripheral hole 1124 when viewed from above. The airflow guide plate 1560 may be provided to have a larger diameter than the substrate W. [

The heating unit 1400 heat-processes the substrate W placed on the substrate supporting unit 1300. FIG. 9 is a bottom view of the first heating member of FIG. 6; FIG. Referring to FIGS. 6 and 9, the heating unit 1400 includes a first heating member 1420. The first heating member 1420 is located in the processing space 1110 excluding the substrate supporting unit 1300. [ The first heating member 1420 heats the substrate W to the process temperature. The first heating member 1420 includes a plurality of lamps 1422. The lamps 1422 are positioned to face the support surface. The lamps 1422 irradiate light onto the upper surface of the substrate W at the top of the substrate W placed on the support pins 1330. The lamps 1422 are installed on the bottom of the airflow guide plate 1560. According to one example, the light may be infrared. The process temperature may be from 350 to 450 캜. In this embodiment, it is explained that the process temperature is provided at 400 캜.

Next, a method of heating the substrate W using the above-described substrate heating apparatus will be described. FIGS. 10 and 11 are views showing a state in which the substrate is supported by the substrate supporting unit of FIG. 8. FIG. 10 is a view showing a state where the integrated piping 1370 is cut off and the space between the substrate W and the supporting surface is not decompressed and FIG. 11 is a view showing a state in which the integrated piping 1370 is opened and the space is decompressed . When the substrate W is placed on the support pin 1330, as shown in FIG. 10, the central region and the edge region have different heights due to warpage of the substrate W. Generally, the edge region of the substrate W on which the warpage is generated has a height higher than that of the central region. Thus, the central region of the substrate W is supported by the support pins 1330, but the edge regions are spaced apart from the support pins 1330. [

When the integrated pipe 1370 is opened, the vacuum delivered from the pressure-reducing member 1380 passes through the integrated pipe 1370, the vacuum pipe 1360, and the vacuum hole 1324 to the space between the substrate W and the supporting surface / RTI > Thus, the central region and the edge region of the substrate W are contacted with the support pins 1330 and remain flat. When the substrate W has a flat state, the first heating member 1420 heats the substrate W to the process temperature to bake the liquid film formed on the substrate W.

The first heating member 1420 is positioned apart from the substrate supporting unit 1300 on which the substrate W is placed and the substrate supporting unit 1300 vacuum-chucks the substrate W, (W) in a flat state. The first heating member 1420 heats the substrate W to the process temperature and the members for vacuum adsorption of the substrate W, namely, the vacuum pipe 1360, the integrated pipe 1370, the valve 1372, Since the pressure-reducing member 1380 is located farther away from the substrate W than the first heating member 1420, the pressure-reducing member 1380 is heated to a temperature lower than the process temperature. The members for vacuum-adsorbing the substrate W can be prevented from being thermally deformed.

In the above-described embodiment, the heating unit 1400 is described as including the first heating member 1420. However, unlike the above-described embodiment, the heating unit 1440 may further include a second heating member 1440 together with the first heating member 1420. Referring to FIG. 12, the second heating member 1440 may be provided on the support plate 1320. The second heating member 1440 may be installed inside the support plate 1320 or on the bottom surface of the support plate 1320. The second heating member 1440 may be a thermoelectric element or a hot wire. The second heating member 1440 can heat-treat the substrate W to a compensation temperature. The compensation temperature may be a temperature lower than the thermal deformation temperature of the members vacuum-adsorbing the substrate W. [ The first heating member 1420 heats the substrate W to the process temperature and the second heating member 1440 applies the substrate W to the lower portion of the substrate W at the compensation temperature It is possible to prevent the thermal deformation of the vacuum pipe 1360, the integrated pipe 1370, the valve 1372, and the pressure-reducing member 1380.

2 to 5, the developing module 402 includes a developing process for supplying a developing solution to obtain a pattern on the substrate W to remove a part of the photoresist, and a developing process for removing a portion of the photoresist on the substrate W And a heat treatment process such as heating and cooling performed on the substrate. The development module 402 has a development unit 460, a bake unit 470, and a transfer chamber 480. [ The developing unit 460, the bake unit 470, and the transfer chamber 480 are sequentially disposed along the second direction 14. The developing unit 460 and the bake unit 470 are positioned apart from each other in the second direction 14 with the transfer chamber 480 therebetween. A plurality of developing units 460 are provided, and a plurality of developing units 460 are provided in the first direction 12 and the third direction 16, respectively. In the drawing, an example in which six developing units 460 are provided is shown. A plurality of bake units 470 are provided in the first direction 12 and the third direction 16, respectively. In the drawing, an example in which six bake units 470 are provided is shown. Alternatively, however, the bake unit 470 may be provided in a greater number.

The transfer chamber 480 is positioned in parallel with the second buffer 330 of the first buffer module 300 in the first direction 12. In the transfer chamber 480, the developing robot 482 and the guide rail 483 are positioned. The delivery chamber 480 has a generally rectangular shape. The developing robot 482 includes bake units 470, developing units 460, a second buffer 330 and a cooling chamber 350 of the first buffer module 300 and a second buffer module 500, And the second cooling chamber 540 of the second cooling chamber 540. The guide rail 483 is arranged such that its longitudinal direction is parallel to the first direction 12. The guide rail 483 guides the developing robot 482 to linearly move in the first direction 12. The developing sub-robot 482 has a hand 484, an arm 485, a supporting stand 486, and a pedestal 487. The hand 484 is fixed to the arm 485. The arm 485 is provided in a stretchable configuration to allow the hand 484 to move in a horizontal direction. The support 486 is provided so that its longitudinal direction is disposed along the third direction 16. The arm 485 is coupled to the support 486 such that it is linearly movable along the support 486 in the third direction 16. The support table 486 is fixedly coupled to the pedestal 487. The pedestal 487 is coupled to the guide rail 483 so as to be movable along the guide rail 483.

The developing units 460 all have the same structure. However, the types of developers used in the respective developing units 460 may be different from each other. The developing unit 460 removes a region of the photoresist on the substrate W irradiated with light. At this time, the area of the protective film irradiated with the light is also removed. Depending on the type of selectively used photoresist, only the areas of the photoresist and protective film that are not irradiated with light can be removed.

The developing unit 460 has a housing 461, a support plate 462, and a nozzle 463. The housing 461 has a cup shape with an open top. The support plate 462 is located in the housing 461 and supports the substrate W. [ The support plate 462 is rotatably provided. The nozzle 463 supplies the developer onto the substrate W placed on the support plate 462. The nozzle 463 has a circular tube shape and can supply developer to the center of the substrate W. [ Alternatively, the nozzle 463 may have a length corresponding to the diameter of the substrate W, and the discharge port of the nozzle 463 may be provided with a slit. Further, the developing unit 460 may further be provided with a nozzle 464 for supplying a cleaning liquid such as deionized water to clean the surface of the substrate W to which the developer is supplied.

The bake unit 470 of the developing module 402 heat-treats the substrate W. [ For example, the bake units 470 may include a post bake process in which the substrate W is heated before the development process is performed, a hard bake process in which the substrate W is heated after the development process is performed, And a cooling step for cooling the substrate W is performed. The bake unit 470 has a cooling plate 471 or a heating unit 472. The cooling plate 471 is provided with a cooling means 473 such as a cooling water or a thermoelectric element. Or the heating unit 472 is provided with a heating means 474 such as a heating wire or a thermoelectric element. The cooling plate 471 and the heating unit 472 may be provided in one bake unit 470, respectively. Optionally, some of the bake units 470 may include only the cooling plate 471, while others may only include the heating unit 472. [ Since the bake unit 470 of the developing module 402 has the same configuration as that of the bake unit 800 of the application module 401, detailed description thereof will be omitted.

The second buffer module 500 is provided as a path through which the substrate W is transferred between the coating and developing module 400 and the pre- and post-exposure processing module 600. The second buffer module 500 performs a predetermined process on the substrate W such as a cooling process or an edge exposure process. The second buffer module 500 includes a frame 510, a buffer 520, a first cooling chamber 530, a second cooling chamber 540, an edge exposure chamber 550, and a second buffer robot 560 I have. The frame 510 has a rectangular parallelepiped shape. The buffer 520, the first cooling chamber 530, the second cooling chamber 540, the edge exposure chamber 550, and the second buffer robot 560 are located within the frame 510. The buffer 520, the first cooling chamber 530, and the edge exposure chamber 550 are disposed at a height corresponding to the application module 401. The second cooling chamber 540 is disposed at a height corresponding to the development module 402. The buffer 520, the first cooling chamber 530, and the second cooling chamber 540 are sequentially arranged in a row along the third direction 16. The buffer 520 is disposed along the first direction 12 with the transfer chamber 430 of the application module 401. [ The edge exposure chamber 550 is spaced a certain distance in the second direction 14 from the buffer 520 or the first cooling chamber 530.

The second buffer robot 560 carries the substrate W between the buffer 520, the first cooling chamber 530, and the edge exposure chamber 550. A second buffer robot 560 is positioned between the edge exposure chamber 550 and the buffer 520. The second buffer robot 560 may be provided in a structure similar to that of the first buffer robot 360. The first cooling chamber 530 and the edge exposure chamber 550 perform a subsequent process on the substrates W that have been processed in the application module 401. The first cooling chamber 530 cools the substrate W processed in the application module 401. The first cooling chamber 530 has a structure similar to the cooling chamber 350 of the first buffer module 300. The edge exposure chamber 550 exposes its edge to the substrates W that have undergone the cooling process in the first cooling chamber 530. [ The buffer 520 temporarily stores the substrate W before the substrates W processed in the edge exposure chamber 550 are transported to a preprocessing module 601 described later. The second cooling chamber 540 cools the substrates W before the processed substrates W are transferred to the developing module 402 in the post-processing module 602 described later. The second buffer module 500 may further have a buffer added to the height corresponding to the development module 402. In this case, the substrates W processed in the post-processing module 602 may be temporarily stored in the added buffer and then conveyed to the developing module 402.

The pre- and post-exposure processing module 600 may process a process of applying a protective film for protecting the photoresist film applied to the substrate W during liquid immersion exposure, when the exposure apparatus 900 performs the liquid immersion exposure process. In addition, the pre- and post-exposure processing module 600 may perform a process of cleaning the substrate W after exposure. In addition, when the coating process is performed using the chemically amplified resist, the pre- and post-exposure processing module 600 can process the post-exposure bake process.

The pre-exposure post-processing module 600 has a pre-processing module 601 and a post-processing module 602. The pre-processing module 601 performs a process of processing the substrate W before the exposure process, and the post-process module 602 performs a process of processing the substrate W after the exposure process. The pre-processing module 601 and the post-processing module 602 are arranged so as to be partitioned into layers with respect to each other. According to one example, the preprocessing module 601 is located on top of the post-processing module 602. The preprocessing module 601 is provided at the same height as the application module 401. The post-processing module 602 is provided at the same height as the developing module 402. The preprocessing module 601 has a protective film application unit 610, a bake unit 620, and a transfer chamber 630. The protective film application unit 610, the transfer chamber 630, and the bake unit 620 are sequentially disposed along the second direction 14. [ The protective film applying unit 610 and the bake unit 620 are positioned apart from each other in the second direction 14 with the transfer chamber 630 therebetween. A plurality of protective film application units 610 are provided, and are arranged along the third direction 16 to form a layer with each other. Alternatively, a plurality of protective film application units 610 may be provided in the first direction 12 and the third direction 16, respectively. A plurality of bake units 620 are provided and are disposed along the third direction 16 to form layers. Alternatively, the plurality of bake units 620 may be provided in the first direction 12 and the third direction 16, respectively.

The transfer chamber 630 is positioned in parallel with the first cooling chamber 530 of the second buffer module 500 in the first direction 12. In the transfer chamber 630, a pre-processing robot 632 is located. The transfer chamber 630 has a generally square or rectangular shape. The preprocessing robot 632 is connected between the protective film application units 610, the bake units 620, the buffer 520 of the second buffer module 500 and the first buffer 720 of the interface module 700, The substrate W is transferred. The preprocessing robot 632 has a hand 633, an arm 634, and a support 635. The hand 633 is fixed to the arm 634. The arm 634 is provided with a retractable structure and a rotatable structure. The arm 634 is coupled to the support 635 so as to be linearly movable along the support 635 in the third direction 16.

The protective film coating unit 610 applies a protective film for protecting the resist film on the substrate W during liquid immersion exposure. The protective film application unit 610 has a housing 611, a support plate 612, and a nozzle 613. The housing 611 has a cup shape with its top opened. The support plate 612 is located in the housing 611 and supports the substrate W. [ The support plate 612 is rotatably provided. The nozzle 613 supplies a protective liquid for forming a protective film onto the substrate W placed on the supporting plate 612. The nozzle 613 has a circular tube shape and can supply the protective liquid to the center of the substrate W. [ Alternatively, the nozzle 613 may have a length corresponding to the diameter of the substrate W, and the discharge port of the nozzle 613 may be provided with a slit. In this case, the support plate 612 may be provided in a fixed state. The protective liquid includes a foamable material. The protective liquid may be a photoresist and a material having a low affinity for water. For example, the protective liquid may contain a fluorine-based solvent. The protective film applying unit 610 supplies the protective liquid to the central region of the substrate W while rotating the substrate W placed on the supporting plate 612. [

The bake unit 620 heat-treats the substrate W coated with the protective film. The bake unit 620 has a cooling plate 621 or a heating plate 622. The cooling plate 621 is provided with a cooling means 623 such as a cooling water or a thermoelectric element. Or heating plate 622 is provided with a heating means 624, such as a hot wire or a thermoelectric element. The heating plate 622 and the cooling plate 621 may be provided in a single bake unit 620, respectively. Optionally, some of the bake units 620 may include only the heating plate 622, while others may only include the cooling plate 621.

The post-processing module 602 has a cleaning chamber 660, a post-exposure bake unit 670, and a delivery chamber 680. The cleaning chamber 660, the transfer chamber 680, and the post-exposure bake unit 670 are sequentially disposed along the second direction 14. Therefore, the cleaning chamber 660 and the post-exposure bake unit 670 are positioned apart from each other in the second direction 14 with the transfer chamber 680 therebetween. A plurality of cleaning chambers 660 are provided and may be disposed along the third direction 16 to form layers. Alternatively, a plurality of cleaning chambers 660 may be provided in the first direction 12 and the third direction 16, respectively. A plurality of post-exposure bake units 670 are provided, and may be disposed along the third direction 16 to form layers. Alternatively, a plurality of post-exposure bake units 670 may be provided in the first direction 12 and the third direction 16, respectively.

The transfer chamber 680 is positioned in parallel with the second cooling chamber 540 of the second buffer module 500 in the first direction 12 as viewed from above. The transfer chamber 680 has a generally square or rectangular shape. A post processing robot 682 is located in the transfer chamber 680. The post-processing robot 682 is connected to the cleaning chambers 660, the post-exposure bake units 670, the second cooling chamber 540 of the second buffer module 500, and the second And transfers the substrate W between the buffers 730. The postprocessing robot 682 provided in the postprocessing module 602 may be provided with the same structure as the preprocessing robot 632 provided in the preprocessing module 601. [

The cleaning chamber 660 cleans the substrate W after the exposure process. The cleaning chamber 660 has a housing 661, a support plate 662, and a nozzle 663. The housing 661 has a cup shape with an open top. The support plate 662 is located in the housing 661 and supports the substrate W. [ The support plate 662 is rotatably provided. The nozzle 663 supplies the cleaning liquid onto the substrate W placed on the support plate 662. As the cleaning liquid, water such as deionized water may be used. The cleaning chamber 660 supplies the cleaning liquid to the central region of the substrate W while rotating the substrate W placed on the support plate 662. Optionally, while the substrate W is rotating, the nozzle 663 may move linearly or rotationally from the central region of the substrate W to the edge region.

The post-exposure bake unit 670 uses the deep ultraviolet light to heat the substrate W subjected to the exposure process. The post-exposure baking step heats the substrate W and amplifies the acid generated in the photoresist by exposure to complete the property change of the photoresist. The post-exposure bake unit 670 has a heating plate 672. The heating plate 672 is provided with a heating means 674 such as a hot wire or a thermoelectric element. The post-exposure bake unit 670 may further include a cooling plate 671 therein. The cooling plate 671 is provided with a cooling means 673 such as a cooling water or a thermoelectric element. Further, a bake unit having only a cooling plate 671 may be further provided.

As described above, the pre-processing module 601 and the post-processing module 602 in the pre-exposure processing module 600 are provided to be completely separated from each other. The transfer chamber 630 of the preprocessing module 601 and the transfer chamber 680 of the postprocessing module 602 are provided in the same size and can be provided so as to completely overlap each other when viewed from above. In addition, the protective film application unit 610 and the cleaning chamber 660 may be provided to have the same size as each other and be provided so as to completely overlap each other when viewed from above. In addition, the bake unit 620 and the post-exposure bake unit 670 are provided in the same size and can be provided so as to completely overlap each other when viewed from above.

The interface module 700 transfers the substrate W between the exposure pre- and post-processing module 600 and the exposure apparatus 900. The interface module 700 has a frame 710, a first buffer 720, a second buffer 730, and an interface robot 740. The first buffer 720, the second buffer 730, and the interface robot 740 are located within the frame 710. The first buffer 720 and the second buffer 730 are spaced apart from each other by a predetermined distance and are stacked on each other. The first buffer 720 is disposed higher than the second buffer 730. The first buffer 720 is positioned at a height corresponding to the preprocessing module 601 and the second buffer 730 is positioned at a height corresponding to the postprocessing module 602. The first buffer 720 is arranged in a line along the first direction 12 with the transfer chamber 630 of the preprocessing module 601 while the second buffer 730 is arranged in the postprocessing module 602, Are arranged in a line along the first direction 12 with the transfer chamber 630 of the transfer chamber 630. [

The interface robot 740 is spaced apart from the first buffer 720 and the second buffer 730 in the second direction 14. The interface robot 740 carries the substrate W between the first buffer 720, the second buffer 730 and the exposure apparatus 900. The interface robot 740 has a structure substantially similar to that of the second buffer robot 560.

The first buffer 720 temporarily stores the substrates W processed in the preprocessing module 601 before they are transferred to the exposure apparatus 900. The second buffer 730 temporarily stores the processed substrates W in the exposure apparatus 900 before they are transferred to the post-processing module 602. The first buffer 720 has a housing 721 and a plurality of supports 722. The supports 722 are disposed within the housing 721 and are provided spaced apart from each other in the third direction 16. One substrate W is placed on each support 722. The housing 721 is movable in the direction in which the interface robot 740 is provided and in the direction in which the interface robot 740 and the preprocessing robot 632 transfer the substrate W to and from the support table 722, 632 are provided with openings (not shown) in the direction in which they are provided. The second buffer 730 has a structure substantially similar to that of the first buffer 720. However, the housing 4531 of the second buffer 730 has an opening (not shown) in the direction in which the interface robot 740 is provided and in a direction in which the postprocessing robot 682 is provided. The interface module may be provided with only the buffers and robots as described above without providing a chamber for performing a predetermined process on the substrate.

1100: housing 1300: substrate support unit
1320: Support plate 1324: Vacuum hole
1330: Support pin 1360: Vacuum piping
1380: pressure reducing member 1420: first heating member
1440: second heating member

Claims (10)

An apparatus for heating a substrate,
A housing having a processing space therein;
A substrate supporting unit having a supporting surface on which the substrate is supported in the processing space;
An exhaust unit for exhausting the atmosphere of the processing space;
And a first heating member installed in the exhaust unit and heating the substrate supported on the support surface to a process temperature,
Wherein the substrate supporting unit comprises:
A support plate having a support surface having a diameter larger than that of the substrate on an upper surface thereof and having a plurality of vacuum holes formed in the support surface;
A support pin fixedly coupled to the support surface and projecting upward from the support surface to support the substrate;
A vacuum tube positioned in the support plate and connected to the vacuum holes;
And a pressure-reducing member for decompressing the vacuum pipe,
The exhaust unit includes:
An exhaust pipe positioned to penetrate the upper wall of the housing;
An exhaust member for decompressing the exhaust pipe;
And an air flow guide plate fixed to the exhaust pipe to face the support surface and having a through hole into which the exhaust pipe is inserted,
Wherein the first heating member includes a plurality of lamps mounted on the airflow guide plate at a position facing the support surface. delete delete The method according to claim 1,
Wherein the vacuum holes are formed in each of a central region and an edge region of the support surface. delete 5. The method of claim 4,
Wherein the first heating member includes a lamp that emits light to a substrate supported on the support surface. An apparatus for heating a substrate,
A housing having a processing space therein;
A substrate supporting unit having a supporting surface on which the substrate is supported in the processing space;
An exhaust unit for exhausting the atmosphere of the processing space;
A first heating member installed in the exhaust unit so as to face the support surface from above the support surface and heating the substrate supported on the support surface to a process temperature;
And a second heating member for heating the substrate supported on the support surface below the support surface to a compensation temperature lower than the process temperature,
Wherein the substrate supporting unit comprises:
A support plate having a support surface having a diameter larger than that of the substrate on an upper surface thereof and having a plurality of vacuum holes formed in the support surface;
A support pin fixedly coupled to the support surface and projecting upward from the support surface to support the substrate;
A vacuum tube positioned in the support plate and connected to the vacuum holes;
And a pressure-reducing member for decompressing the vacuum pipe,
The exhaust unit includes:
An exhaust pipe positioned to penetrate the upper wall of the housing;
An exhaust member for decompressing the exhaust pipe;
And an air flow guide plate fixed to the exhaust pipe to face the support surface and having a through hole into which the exhaust pipe is inserted,
Wherein the first heating member includes a plurality of lamps installed on the airflow guide plate at a position facing the support surface,
And the second heating member is provided on the support plate. 8. The method of claim 7,
Wherein the vacuum holes are formed in each of a central region and an edge region of the support surface. delete 8. The method of claim 7,
Wherein the lamp irradiates light to the substrate supported on the support surface.

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