KR101831207B1 - Semiconductor light emitting device and method of manufacturing the same - Google Patents

Abstract

The present invention relates to a semiconductor light emitting device, comprising: a semiconductor light emitting device chip comprising: a plurality of semiconductor layers including an active layer that generates light by recombination of electrons and holes; and a semiconductor layer including electrodes electrically connected to the plurality of semiconductor layers A light emitting element chip; A first encapsulant disposed on a semiconductor light emitting device chip, comprising: a first encapsulant including a cavity surrounded by a first encapsulant, the first encapsulant having an upper surface convex downward; And a second encapsulant, which is formed in the cavity of the first encapsulant and reflects light emitted from the semiconductor light emitting device chip, and a method of manufacturing the same.

Description

Technical Field [0001] The present invention relates to a semiconductor light emitting device and a method of manufacturing the same,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates generally to a semiconductor light emitting device and a method of manufacturing the same, and more particularly to a semiconductor light emitting device that emits light on a side surface and a method of manufacturing the same.

Herein, the background art relating to the present disclosure is provided, and these are not necessarily meant to be known arts. Also, in this specification, directional indication such as up / down, up / down, etc. is based on the drawings.

1 is a view showing an example of a conventional semiconductor light emitting device chip.

The semiconductor light emitting device chip includes a buffer layer 20, a first semiconductor layer 30 (e.g., an n-type GaN layer) 30 having a first conductivity, An active layer 40 (e.g., INGaN / (In) GaN MQWs) that generates light through recombination of holes, and a second semiconductor layer 50 (e.g., a p-type GaN layer) having a second conductivity different from the first conductivity A light transmitting conductive film 60 for current diffusion and an electrode 70 serving as a bonding pad are formed on the first semiconductor layer 30 and the first semiconductor layer 30 is etched to serve as a bonding pad Electrode 80 (e.g., a Cr / Ni / Au laminated metal pad) is formed. The semiconductor light emitting device of the type shown in FIG. 1 is called a lateral chip in particular. Here, when the growth substrate 10 side is electrically connected to the outside, it becomes a mounting surface.

2 is a view showing another example of the semiconductor light emitting device chip disclosed in U.S. Patent No. 7,262,436. For ease of explanation, the drawing symbols have been changed.

The semiconductor light emitting device chip includes a growth substrate 10, a growth substrate 10, a first semiconductor layer 30 having a first conductivity, an active layer 40 for generating light through recombination of electrons and holes, And a second semiconductor layer 50 having a second conductivity different from that of the second semiconductor layer 50 are deposited in this order on the substrate 10, and three layers of electrode films 90, 91, and 92 for reflecting light toward the growth substrate 10 are formed have. The first electrode film 90 may be an Ag reflective film, the second electrode film 91 may be an Ni diffusion prevention film, and the third electrode film 92 may be an Au bonding layer. An electrode 80 functioning as a bonding pad is formed on the first semiconductor layer 30 exposed by etching. Here, when the electrode film 92 side is electrically connected to the outside, it becomes a mounting surface. The semiconductor light emitting device chip of the type shown in FIG. 2 is called a flip chip. In the case of the flip chip shown in FIG. 2, the electrodes 80 formed on the first semiconductor layer 30 are lower in height than the electrode films 90, 91, and 92 formed on the second semiconductor layer, . Here, the height reference may be a height from the growth substrate 10.

3 is a view showing an example of a conventional semiconductor light emitting device.

The semiconductor light emitting device 100 is provided with lead frames 110 and 120, a mold 130, and a vertical type light emitting chip 150 in a cavity 140. The cavity 140 is formed in the cavity 130, Is filled with an encapsulant 170 containing the wavelength conversion material 160. The lower surface of the vertical type semiconductor light emitting device chip 150 is electrically connected directly to the lead frame 110 and the upper surface thereof is electrically connected to the lead frame 120 by the wire 180. A part of the light emitted from the vertical type semiconductor light emitting device chip 150 excites the wavelength conversion material 160 to produce light of a different color, and two different lights may be mixed to form white light. For example, the semiconductor light emitting device chip 150 generates blue light, and the light generated by exciting the wavelength conversion material 160 is yellow light, and blue light and yellow light may be mixed to form white light. FIG. 3 shows a semiconductor light emitting device using the vertical semiconductor light emitting device chip 150, but it is also possible to manufacture the semiconductor light emitting device of FIG. 3 using the semiconductor light emitting device chip shown in FIGS. 1 and 2 have.

The semiconductor light emitting device of the type shown in FIG. 3 is generally referred to as a package type semiconductor light emitting device, and the semiconductor light emitting device of a semiconductor light emitting device chip size is referred to as a CSP (Chip Scale Package) type semiconductor light emitting device. Related to the CSP type semiconductor light emitting device is disclosed in Korean Patent Laid-Open Publication No. 2014-0127457. In recent years, a semiconductor light emitting device of the CSP type has been actively developed as a semiconductor light emitting device tends to be miniaturized, and the present disclosure is characterized by improving the light extraction efficiency of a side surface of a CSP type semiconductor light emitting device .

This will be described later in the Specification for Implementation of the Invention.

SUMMARY OF THE INVENTION Herein, a general summary of the present disclosure is provided, which should not be construed as limiting the scope of the present disclosure. of its features).

According to one aspect of the present disclosure, there is provided a semiconductor light emitting device comprising: a plurality of semiconductors, each of which includes an active layer that generates light by recombination of electrons and holes, A semiconductor light emitting element chip having electrodes electrically connected to the plurality of semiconductor layers; A first encapsulant disposed on a semiconductor light emitting device chip, comprising: a first encapsulant including a cavity surrounded by a first encapsulant, the first encapsulant having an upper surface convex downward; And a second encapsulant that is formed in the cavity of the first encapsulant and reflects light emitted from the semiconductor light emitting device chip.

According to another aspect of the present disclosure, there is provided a method of manufacturing a semiconductor light emitting device, comprising: providing a mask having at least one opening formed on a base; Placing a semiconductor light emitting device chip on a base exposed with respective openings of a mask; Forming a first sealing material on each of the openings by using the mask as a dam, wherein the material forming the first sealing material rides on the inner surface of the mask so that the upper surface of the first sealing material is convex downward, Forming a first encapsulant to form a cavity surrounded by the encapsulant; And forming a second encapsulant that reflects light in a cavity surrounded by the first encapsulant. The present invention also provides a method of manufacturing a semiconductor light emitting device.

This will be described later in the Specification for Implementation of the Invention.

1 is a view showing an example of a conventional semiconductor light emitting device chip,
2 is a view showing another example of the semiconductor light emitting device chip disclosed in U.S. Patent No. 7,262,436,
3 is a view showing an example of a conventional semiconductor light emitting device,
4 to 8 are views for explaining an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure,
9 is a view for explaining examples of a form in which the material forming the sealing material is supplied to the opening and cured in the method of manufacturing the semiconductor light emitting device according to the present disclosure,
10 is a view for explaining another example of a method for manufacturing a semiconductor light emitting device according to the present disclosure,
11 is a view for explaining another example of a method of manufacturing a semiconductor light emitting device according to the present disclosure,
12 is a view showing an example of a semiconductor light emitting device according to the present disclosure,
13 is a view showing an application example of the semiconductor light emitting device shown in FIG. 12,
FIG. 14 is a view showing an example of a method of manufacturing the semiconductor light emitting device shown in FIG. 12,
FIG. 15 is a view showing various embodiments of the semiconductor light emitting device disclosed in FIG. 12;
16 is a view for explaining the effect of the degree of the downward convexity of the top surface of the first encapsulant in the semiconductor light emitting device according to the present disclosure,
17 is a view showing another example of the semiconductor light emitting device according to the present disclosure,
18 is a view showing an experiment example of luminescence according to the plane shape of the semiconductor light emitting device according to the present disclosure.

The present disclosure will now be described in detail with reference to the accompanying drawings.

4 to 8 are views for explaining an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure. In the method of manufacturing a semiconductor light emitting device, as shown in FIG. 4, And a mask 301 having the openings 305 formed therein. 6 (b), by using the element transferring apparatus 501 which recognizes the shape, pattern, or boundary of the mask 301 and corrects the position and angle at which the element is to be placed, The semiconductor light emitting device chip 101 is placed on the base 201 exposed by the light emitting device 100. [ Next, as shown in Fig. 8, the mask 301 is provided as a dam, and a material for forming the sealing material 170 is supplied to each opening 305. Then, as shown in Fig.

In this example, before placing the semiconductor light emitting device chip 101 on the base 201, the mask 301 is first placed on the base 201. [ The mask 301 can be recognized as a pattern for correcting the position or angle at which the element transferring apparatus 501 will place the semiconductor light emitting device chip 101 and functions as a dam of the sealing material 170. [ In this example, a flip chip is suitable for the semiconductor light-emitting device chip 101, but it does not exclude a lateral chip or a vertical chip. As a flip chip element, the semiconductor light emitting element chip 101 is shown in Figs. 2 and 7. Fig.

Each process will be described in detail below.

As shown in FIG. 5, a mask 301 is provided on the base 201. The base 201 may be a rigid metal or non-metal plate, as shown in Fig. 5 (a), or may be a flexible film or tape, as shown in Fig. 5 (b). For example, Al, Cu, Ag, Cu-Al alloy, Cu-Ag alloy, Cu-Au alloy, SUS (stainless steel) and the like can be used as the metal plate, Of course, it can be used. Plastics can be used as non-metallic plates, and various colors and light reflectance can be selected. There is no particular limitation on the film or the tape, and it is preferable that the film or tape has adhesiveness or adhesiveness and has heat resistance. For example, a heat-resistant tape, a blue tape, or the like can be used, and various colors and light reflectance can be selected.

As described above, according to this example, the base 201 on which the semiconductor light-emitting device chips 101 are arranged is not necessarily a semiconductor substrate or another expensive substrate. Further, since the mask 301 serves as a guide for arranging the semiconductor light emitting device chips 101, an additional pattern forming step is not required for the base 201. [ In addition, the electrodes 80 and 70 of the semiconductor light emitting device chip 101 shown in FIG. 7 may be electrodes directly contacting the external electrodes, or the base may be used for electrical conduction, Additional or additional processes such as forming a conductive layer for electrical connection or further forming an electrical contact portion connected to the electrodes 80 and 70 of the semiconductor light emitting device chip 101 after removal of the base 201 There is an advantage that it is very advantageous in terms of process and cost.

The mask 301 may be a plastic, a metal, or a surface-plated member, and at least one opening 305 is formed. The material of the mask 301 may be exemplified by the materials exemplified by the material of the base, but it is preferable that the material is somewhat rigid to be suitable for maintaining the shape of the mask 301 and the opening 305, . ≪ / RTI > In particular, as described later, in view of the device transfer apparatus recognizing the pattern of the mask 301, it is preferable that at least one of the material, the color, and the light reflectance is selected for the mask 301 and the base 201 differently.

In this example, the base 201 and the mask 301 are pressed by an external force and brought into contact with each other. For example, as shown in Fig. 5 (a), the clamp 401 can be used to bring the base 201 and the mask 301 into contact with each other. As described above, according to this example, there is a convenient advantage in that the method for contacting the base 201 with the mask 301 is simple and the mask 301 can be removed from the base 201 by loosening the clamp 401 . An embodiment in which an adhesive material is interposed between the base 201 and the mask 301 is of course possible. For example, the adhesive material may be selected from a variety of conductive pastes, insulating pastes, polymeric adhesives, and the like, and is not particularly limited. When the material which loses the adhesive force in any temperature range is used, separation can be facilitated in the temperature range when the base 201 and the mask 301 are separated.

One or more openings 305 formed in the mask 301 are, for example, arranged in a plurality of rows and columns. The upper surface of the base 201 is exposed by the opening 305. It goes without saying that the number and arrangement of the openings 305 can be appropriately changed as necessary. The opening 305 may conform to the shape of the semiconductor light emitting device chip 101, but may have a shape different from that of the semiconductor light emitting device chip 101.

6 is a view for explaining an example of the process of placing the semiconductor light emitting device chip 101 on the base 201 exposed in the opening 305. The element transferring apparatus 501 includes a fixing portion 13 Each semiconductor light emitting device chip 101 is picked up and placed on the base 201 exposed by the opening 305 of the mask 301. Prior to this process, a process of providing a plurality of semiconductor light-emitting device chips 101 on the tape 13 using a device array device (e.g., sorter) may be preceded. 6A, the semiconductor light emitting device chip 101 is detached from the tape 13 when a pin or a rod is pushed against the semiconductor light emitting device chip 101 under the tape 13, and the instantaneous element transfer device 501 can electrically or vacuum-adsorb the semiconductor light-emitting device chip 101. The device transferring apparatus 501 moves over the base 201 and places the semiconductor light emitting device chips 101 in the respective openings 305 as shown in Fig. The semiconductor light emitting device chip 101 is arranged such that the two electrodes 80 and 70 face the upper surface of the base 201 so that the two electrodes 80 and 70 are covered by the sealing material 170, And is exposed from the lower surface of the sealing material 170. [ As an example of the device transferring apparatus 501, a device capable of recognizing a pattern or a shape and correcting the position to be transferred or the angle of the object, similar to the die bonder, may be used irrespective of the name.

Fig. 7 illustrates a flip chip having a structure different from that shown in Fig. 2 as a flip chip. The semiconductor light emitting device chip 101 includes a growth substrate 10, a plurality of semiconductor layers 30, 40 and 50, a light reflection layer R, and two electrodes 80 and 70. As an example of the III-nitride semiconductor light emitting device, sapphire, SiC, Si, GaN or the like is mainly used as the growth substrate 10, and the growth substrate 10 may be finally removed. The plurality of semiconductor layers 30, 40, and 50 may include a buffer layer (not shown) formed on the growth substrate 10, a first semiconductor layer 30 having a first conductivity (e.g., Si-doped GaN) A second semiconductor layer 50 (e.g., Mg-doped GaN) having another second conductivity, and a second semiconductor layer 50 interposed between the first semiconductor layer 30 and the second semiconductor layer 50 to generate light through recombination of electrons and holes. An active layer 40 (e.g., InGaN / (In) GaN multiple quantum well structure). Each of the plurality of semiconductor layers 30, 40, and 50 may have a multi-layer structure, and the buffer layer may be omitted. The positions of the first semiconductor layer 30 and the second semiconductor layer 50 may be changed, and they are mainly composed of GaN in the III-nitride semiconductor light emitting device. The first electrode (80) is in electrical communication with the first semiconductor layer (30) to supply electrons. The second electrode 70 is in electrical communication with the second semiconductor layer 50 to supply holes.

7A, a light reflecting layer R is interposed between the second semiconductor layer 50 and the electrodes 70 and 80. The light reflecting layer R is an insulating layer such as SiO ₂ , a DBR A Distributed Bragg Reflector) or an ODR (Omni-Directional Reflector). Alternatively, as shown in FIG. 7 (b), the metal reflection film R may be provided on the second semiconductor layer 50, the electrode 70 may be provided on the metal reflection film R, The semiconductor layer 50 and the other electrode 80 can communicate with each other. The above-described element transfer apparatus 501 can recognize the shape or the pattern of such electrodes 70 and 80. [

FIG. 8 is a view for explaining an example of a method of supplying a material for forming an encapsulating material to each opening by using a mask as a dam in the method of manufacturing a semiconductor light emitting device according to the present disclosure. As shown in FIG. 8 (a) A material for forming the sealing material 170 may be supplied to each of the openings 305 by the dispenser 601. Alternatively, as shown in Fig. 8 (b), a method of flattening the material forming the encapsulant 170 may be used. The material forming the encapsulant 170 is one of a light transmitting material and a light transmitting material including a wavelength converting material. The light transmitting material may be one of a silicone resin and an epoxy resin.

9 is a view for explaining examples of a form in which a material for forming an encapsulating material is supplied to an opening and cured in the method for manufacturing a semiconductor light emitting device according to the present disclosure, wherein the encapsulating material 170 is formed by a dispenser 601 The upper surface of the encapsulant 170 can be made slightly convex as shown in FIG. 9 (a) by controlling the speed, quantity, etc. of supplying the substance. When the encapsulant 170 is formed in this manner, the distribution of light emitted from the semiconductor light emitting device chip 101 can be helped to a desired shape. Further, it may be made flat as shown in Fig. 9 (b). On the other hand, it is also possible to provide the wall 303 higher than the mask 301 on the outer side of the mask 301 and to form the sealing material 170 higher than the mask 301 as shown in Fig. 9 (c). It is also possible to supply the material for forming the sealing material 170 lower than the height of the mask 301, which will be described in Fig. 9 (d), the mask 301, the encapsulant 170, and the semiconductor light-emitting device chip 101 are integrally separated from the base 201 Separated. Here, the mask 301, the sealing material 170, and the combination of the semiconductor light-emitting device chips 101 may be directly used as devices. On the other hand, when the base 201 and the mask 301 are bonded to each other by an adhesive or other method, the mask 301, the sealing material 170, the semiconductor light emitting device chip 101, It can also be used as a device. Alternatively, the mask 301 may be removed to separate the individual semiconductor light emitting elements, or the mask 301 may be cut to separate individual semiconductor light emitting elements, or the mask 301 and the base 201 may be cut together, . ≪ / RTI >

10A and 10B are views for explaining another example of the method of manufacturing the semiconductor light emitting device according to the present disclosure. In this example, before the semiconductor light emitting device chip 101 is placed on the base 201, , The wavelength conversion agent is conformally coated (for example, spray coated) on the surface of the semiconductor light emitting device chip 101. The wavelength conversion layer 102 is much smaller in volume and thickness than the encapsulant 170, but can be uniformly coated on the semiconductor light emitting device chip 101 and the amount of the wavelength converting agent can be reduced. For example, the thickness of the wavelength conversion element layer 102 is about 30 μm, and the thickness of the sealing material 170 is about 100 μm to 200 μm.

Thereafter, the mask 301 is first placed on the base 201, and the wavelength conversion layer 102 (not shown) is formed in each opening 305 of the mask 301 by the device transferring device 501 capable of recognizing the pattern and capable of position and angle correction Is formed on the semiconductor light emitting device chip 101. [ Thereafter, as shown in Fig. 10 (b), the material forming the encapsulant 170 in the opening 305 is supplied and cured. Here, the material forming the encapsulant 170 may be made of a light-transmissive material so as not to contain a wavelength converting agent but merely to encapsulate for protection. 10 (c), the base 201 is separated from the mask 301, the sealing material 170, and the semiconductor light emitting device chip 101. Then, as shown in Fig. The separation can be accomplished by releasing the clamp 401 when the base 201 is a rigid plate or by ejecting the base 201 when the base 201 is film or tape.

11 is a view for explaining another example of the method for manufacturing a semiconductor light emitting device according to the present disclosure. In this example, a method for manufacturing a semiconductor light emitting device supplies and cures a material for forming the sealing material 170, Separating each of the semiconductor light emitting devices from the mask 301 after separating the assembly of the semiconductor light emitting device chip 301, the sealing material 170, and the semiconductor light emitting device chip 101 from the base 201. As a separation method, a method of extracting the semiconductor light emitting element from the mask 301 can be used.

For example, a scanner or similar device may be used to extract from the mask 301. When the semiconductor light emitting element 101, 102, 170 is pushed out from the mask 301 by hitting the semiconductor light emitting element under the pin 702 or the rod, the semiconductor light emitting element is gripped and transported from above by using the vacuum suction or the electric fixing means 701 can do. The bonding force between the mask 301 and the encapsulant 170 is set so as to be easily released from the mask 301 because the bonding force between the mask 301 and the encapsulant 170 is too strong, You can consider adding a configurable control.

12 is a view showing an example of a semiconductor light emitting device according to the present disclosure.

The semiconductor light emitting device 800 includes a semiconductor light emitting device chip 810 having a plurality of semiconductor layers including an active layer that generates light by recombination of electrons and holes and an electrode 811 electrically connected to the plurality of semiconductor layers, A second encapsulant 820 disposed on the first encapsulant 820 and the first encapsulant 820 located on the semiconductor light emitting device chip 810 and reflecting the light 850 emitted from the semiconductor light emitting device chip 810, (830). The semiconductor light emitting device chip 810 is preferably a flip chip. The first encapsulant 820 may be formed of one of a transmissive material and a transmissive material including the wavelength conversion material 821. The first encapsulation material 820 is formed to surround the side surface 812 of the semiconductor light emitting device chip 810. However, the electrode 811 of the semiconductor light emitting device chip 810 is exposed in the direction of the lower surface 822 of the first encapsulant 820. The upper surface 840 of the first encapsulant 820 is convex downward to form a cavity 841 surrounded by the first encapsulant 820. The ratio of the height 824 of the highest point 823 of the first encapsulant 820 and the width 825 of the first encapsulant 820 with respect to the lower surface 822 of the first encapsulant 820 is 1: . The upper surface 822 of the first encapsulant 820 is pressed against the upper surface 822 of the first encapsulant 820 in accordance with the ratio of the height 824 of the highest point 823 to the width 825 of the first encapsulant 820, The degree of convex downward movement of the semiconductor light emitting device 800 can be controlled and the efficiency of extracting the light 850 from the side of the semiconductor light emitting device 800 at a ratio of 1: 1.5 to 1: 3 is high. The degree of convexity of the upper surface 840 of the first encapsulant 820 is determined by the height 824 of the highest point 823 of the first encapsulant 820 and the width 824 of the width 825 of the first encapsulant 820 But it can also be adjusted depending on the amount of the material forming the first encapsulant 820, which will be described in detail with reference to FIG. The ratio of the degree of convexity of the top surface 840 of the first encapsulant 820 down to the height 824 of the topmost point 823 of the first encapsulant 820 and the width 825 of the first encapsulant 820 The directional angle of the light 850 directed to the side surface of the semiconductor light emitting device 800 can be adjusted and the directional angle adjustment will be described with reference to FIG. The first encapsulant 820 may be formed only on the semiconductor light emitting device chip 810 without covering the side surface 812 of the semiconductor light emitting device chip 810. The second encapsulant 830 is located on the first encapsulant 820 and is located in the cavity 841 surrounded by the first encapsulant 820 in particular. The second encapsulant 830 is formed of a material that reflects light, and may be, for example, a white silicone resin. Or the second encapsulant 830 may be formed of a semi-transmissive material that reflects some of the light and transmits some of the light. The light 850 directed to the upper side of the semiconductor light emitting device chip 810 is reflected by the second encapsulant 830 and goes to the side of the semiconductor light emitting device 800.

13 is a view showing an application example of the semiconductor light emitting device shown in FIG.

A liquid crystal display (LCD) is a device for displaying an image by injecting liquid crystal between two glass plates and applying power to the upper and lower glass plate electrodes to change the arrangement of liquid crystal molecules in each pixel. Unlike a cathode ray tube (CRT), a plasma display panel (PDP) or the like, a display using a liquid crystal display device is not usable in a place where there is no light because the display itself is non-luminous. In order to compensate for these drawbacks, a light source assembly for uniformly illuminating the information display surface is mounted for the purpose of enabling use in a dark place. The light source assembly used in the liquid crystal display device is divided into two types. The first is an edge type light source assembly that provides light at the side of the liquid crystal display device, and the second is a direct light type light source assembly that provides light directly at the rear side of the liquid crystal display device. Prior art related to a direct-type light source assembly is described in Korean Patent Laid-Open Publication No. 2007-0106397, Korean Patent Laid-Open Publication No. 2008-0021370, Korean Patent Laid-Open Publication No. 2006-0031518, and others. In order to reduce the number of light sources used and reduce the number of light sources used in the direct lighting type light source assembly, a groove 901 is formed in the lower surface of the light guide plate 900 as shown in FIG. 13, The device may be used as a light source, and the semiconductor light emitting device 800 disclosed in FIG. 12 may be used as a light source emitting light laterally. Particularly, when the second encapsulant 830 is formed of a semitransparent material that reflects a part of light and transmits a part of the light, a part of the light 850, which goes to the upper side of the semiconductor light emitting device chip 810, The light is reflected by the second encapsulant 830 to the side of the semiconductor light emitting device 800 and a part of the light 851 may pass through the second encapsulant 830 and go to the upper side of the semiconductor light emitting device 800. The light 852 that goes to the side of the semiconductor light emitting device chip 810 that does not meet the second encapsulant 830 goes out to the side of the semiconductor light emitting device 800 and emits light uniformly around the semiconductor light emitting device 800 do. The luminescent characteristics of the semiconductor light emitting device according to the present disclosure are shown in Fig.

14 is a view showing an example of a method of manufacturing the semiconductor light emitting device shown in FIG.

Referring to FIG. 12A, a mask 1100 having at least one opening 1110 is formed on a base 1000 (S1). Then, the semiconductor light emitting device 1200 is placed on the base 1000 exposed by the openings 1110 of the mask 1100 (S2). The transfer device described in Fig. 6 can be used. The electrode 1210 of the semiconductor light-emitting device chip 1200 faces the base 1000. The width 1120 of the opening 1110 of the mask 1100 is larger than the width 1120 of the semiconductor light emitting device chip 1200 so that the first encapsulant 1300 surrounds the side surface of the semiconductor light emitting device chip 1200. [ It is preferable that the width 1220 is sufficiently larger than the width 1220. Thereafter, the mask 1100 is used as a dam to form the first encapsulant 1300 in each opening 1110 (S3). The material forming the first encapsulant 1300 rides on the inner surface 1130 of the mask 1100 to form a downwardly convex cavity 1310 surrounded by the first encapsulant 1300. [ 1300). The material forming the first encapsulant 1300 rises above the inner surface 1130 of the mask 1100 and the material forming the first encapsulant 1300 is lower than the height 1320 of the mask 1100 The opening 1110 of the mask 1100 must be filled. Thereafter, a second encapsulant 1400 for reflecting light is formed in the cavity 1310 surrounded by the first encapsulant 1300. The second encapsulant 1400 may be formed only in the cavity 1310 to have the same shape as that of FIG. 12 but may be formed out of the cavity 1310 to have a shape as shown in FIG. 15 (a). Thereafter, the base 1000 and the mask 1100 are removed as needed to obtain a semiconductor light emitting device composed only of the first encapsulant 1300, the second encapsulant 1400, and the semiconductor light emitting device chip 1200. However, as described with reference to FIG. 9, a semiconductor light emitting device that includes one of a base and a mask, or both a base and a mask in addition to the first encapsulation material, the second encapsulation material, and the semiconductor light emitting device chip is also possible. 4, the planar shape of the opening 1110 of the mask 1100 is a quadrangle, but the planar shape of the opening 1110 of the mask 1100 is circular or polygonal as shown in Fig. 12 (b) And the planar shape of the semiconductor light emitting device can be from polygonal to circular depending on the plane shape of the opening 1110. [ As the planar shape of the semiconductor light emitting device is circular, the semiconductor light emitting device generates more uniform light around the semiconductor light emitting device, and the light emitting characteristics of such a semiconductor light emitting device are shown in FIG. The semiconductor light emitting device formed in the opening 1110 may be formed in the mask 1100 so that the width of the opening 1110 of the mask 1100 becomes smaller as the width 1120 of the opening 1110 of the mask 1100 decreases. The mask 1100 and the semiconductor light emitting element formed in the opening 1110 are turned upside down together and then the mask 1100 is moved in the direction of the arrow 1410 The plurality of semiconductor light emitting devices 1420 formed in the opening 1110 can be separated from the mask 1100 at a time. Although not shown, the width 1120 of the opening 1110 of the mask 1100 may be gradually increased as the distance from the mask 1100 to the mask 1100 decreases. Also, if the mask 1100 and the semiconductor light emitting device formed in the opening 1110 are not turned upside down, It is possible to obtain the same effect that the width 1120 of the opening 1110 of the first electrode 1110 becomes smaller as it goes down. Except for that described in Fig. 14, the remaining steps are substantially the same as the method of manufacturing the semiconductor light emitting device described in Figs.

15 is a view showing various embodiments of the semiconductor light emitting device according to the present disclosure.

The semiconductor light emitting device 1500 shown in FIG. 15A includes a semiconductor light emitting device chip 1510, a first encapsulant 1520, and a second encapsulant 1530 that reflects light. The side 1531 of the second encapsulant 1530 is exposed to the outside. The semiconductor light emitting device 1600 shown in FIG. 15B includes a semiconductor light emitting device chip 1610, a first encapsulant 1620, and a second encapsulant 1630 for reflecting light. The upper surface 1631 of the first encapsulant 1620 is convex downward. The degree to which the top surface 1631 is convex downward depends on the amount of the material forming the first encapsulant 1300 filled in the width 1120 of the mask 1100 and the opening 1110 of the mask 1100 in Fig. Can be adjusted. For example, as the amount of the material forming the first encapsulant 1300 filled in the opening 1110 of the mask 1100 increases, the degree of convexity becomes smaller and becomes flat. 15 (c), the semiconductor light emitting element 1640 is formed such that the upper surface of the first encapsulant 1660 is downwardly convex 1662 and the flat portion 1661 is formed at the same time. The directivity angle of the light to the side of the semiconductor light emitting device 1640 can be controlled through the ratio of the flat portion 1661 and the convex portion 1662 on the top surface of the first encapsulant 1660. The second encapsulant 1670 reflecting light is formed on the flat portion 1661 as well as the cavity 1663 formed by the convex portion 1662 of the upper surface of the first encapsulant 1660. The semiconductor light emitting elements 1500, 1600 and 1640 are substantially the same as the semiconductor light emitting element 800 described in Fig.

16 is a view for explaining the effect of the degree of convexity of the top surface of the first encapsulant in the semiconductor light emitting device according to the present disclosure.

The semiconductor light emitting device 1700 is configured such that the light 1740 emitted from the semiconductor light emitting device chip 1710 is reflected by the semiconductor light emitting device 1700 according to the degree of convexity of the top surfaces 1731, 1732, and 1733 of the first encapsulant 1720, Can be controlled. The upper surfaces 1731, 1732, and 1733 of the first encapsulant 1720 are shown together in one semiconductor light emitting element 1700 for the sake of explanation. 16, the upwardly-directed light 1740 emitted from the semiconductor light-emitting device chip 1710 is reflected by the upper surfaces 1731, 1732, and 1733 having different degrees of convexity downward from the first encapsulant 1720, Light 1743 emerges from the side surface of the element 1700 and the light 1743 reflected by the flat upper surface 1733 of the first encapsulant 1720 has the largest directivity angle, The angle of incidence of the light 1741 reflected by the uppermost surface 1731 is the smallest. It is assumed that the directivity angle of the imaginary light 1750 traveling in the vertical direction on the upper side is 90 degrees and the directivity angle becomes larger when it is inclined from the upper direction. As the top surfaces 1731, 1732, and 1733 of the first encapsulant 1730 are flattened, the light emitted toward the upper side of the semiconductor light emitting device chip 1710 becomes larger due to the second encapsulant 1730, 180 degrees. Also, although not shown, the ratio of the width 1750 and the height 1751 of the first encapsulant 1730 of the semiconductor light emitting device 1700 may affect the orientation angle. Except as described in Fig. 16, the semiconductor light emitting element 1700 is substantially the same as the semiconductor light emitting element 800 described in Fig.

17 is a view showing another example of the semiconductor light emitting device according to the present disclosure.

The semiconductor light emitting device 1800 may be configured such that the second encapsulant 1830 is formed on the upper surface 1822 of the first encapsulant 1820 instead of filling the cavity 1821 surrounded by the first encapsulant 1820 with the second encapsulant. And is formed of a film. In particular, the second sealant 1830 in the form of a film is preferably a metal film 1830. The metal film 1830 has a high reflectance to light. 14, the material forming the second encapsulation material is filled in the cavity surrounded by the first encapsulation material to form the second encapsulation material, instead of forming the metal film on the upper surface of the first encapsulation material forming the cavity The metal film may be formed by vapor deposition, plating, or spraying, and the metal is preferably silver or aluminum. Except for that described in Fig. 17, the semiconductor light emitting element 1800 is substantially the same as the semiconductor light emitting element 800 described in Fig.

FIG. 18 is a diagram illustrating an example of luminescence experiment according to the plane shape of the semiconductor light emitting device according to the present disclosure.

18 is an experimental example showing the light emission characteristics according to the plane shape of the semiconductor light emitting device 1900. The planar shape of the semiconductor light emitting element 1900 is the same as the planar shape of the openings 305 and 1110 of the masks 301 and 1100 shown in Figs. As shown in FIG. 18 (c), the closer the plane shape of the semiconductor light emitting device 1900 is to a circle, the more uniform light is emitted around the semiconductor light emitting device 1900. 18 (a) to 18 (c), the light is emitted more evenly around the semiconductor light emitting device 1900. [ Further, no light is emitted to the upper side of the semiconductor light emitting device 1900, which shows darkness. Although not shown in the experimental example, when a part of the light is transmitted through the second encapsulant and a part of the light is reflected, light is emitted upward from the semiconductor light emitting device 1900 and the light emitted from the semiconductor light emitting device 1900 The upper side can be brighter.

Various embodiments of the present disclosure will be described below.

(1) A semiconductor light emitting device comprising: a semiconductor light emitting device chip comprising: a plurality of semiconductor layers including an active layer that generates light by recombination of electrons and holes; and a plurality of semiconductor layers including electrodes electrically connected to the plurality of semiconductor layers A light emitting element chip; A first encapsulant disposed on a semiconductor light emitting device chip, comprising: a first encapsulant including a cavity surrounded by a first encapsulant, the first encapsulant having an upper surface convex downward; And a second encapsulant formed in the cavity of the first encapsulant and reflecting light emitted from the semiconductor light emitting device chip.

(2) A semiconductor light emitting device, wherein the first encapsulant surrounds a side surface of the semiconductor light emitting device chip.

(3) An electrode of a semiconductor light emitting device chip is exposed in a direction of a lower surface of a first encapsulation material.

(4) The semiconductor light emitting device according to any one of (1) to (4), wherein the ratio of the height of the peak of the first sealing material to the width thereof is 1: 2.

(5) The semiconductor light emitting device according to (5), wherein the second encapsulant is semi-transmissive to transmit a part of light and reflect a part of light.

(6) The semiconductor light emitting device according to (6), wherein the second encapsulant fills a cavity surrounded by the first encapsulant.

(7) The semiconductor light emitting device according to (7), wherein the second encapsulant is formed of a metal film on the upper surface of the first encapsulant.

(8) The semiconductor light emitting device according to (8), wherein the material forming the first encapsulant is a light transmitting material including a wavelength converting material.

(9) A method of manufacturing a semiconductor light emitting device, comprising: providing a mask having at least one opening formed on a base; Placing a semiconductor light emitting device chip on a base exposed with respective openings of a mask; Forming a first sealing material on each of the openings by using the mask as a dam, wherein the material forming the first sealing material rides on the inner surface of the mask so that the upper surface of the first sealing material is convex downward, Forming a first encapsulant to form a cavity surrounded by the encapsulant; And forming a second encapsulant that reflects light in a cavity surrounded by the first encapsulant.

(10) A method of manufacturing a semiconductor light emitting device, comprising: forming a second encapsulant that reflects light in a cavity surrounded by a first encapsulant; and then removing the base and the mask.

(11) The method of manufacturing a semiconductor light emitting device according to claim 1, wherein the semiconductor light emitting device chip is placed so that the electrode of the semiconductor light emitting device chip faces the base in the step of placing the semiconductor light emitting device chip on the base exposed with each opening of the mask.

(12) forming a second encapsulant that reflects light in a cavity surrounded by the first encapsulant, the step of filling the cavity surrounded by the first encapsulant with a material forming the second encapsulant Gt;

(13) The method of manufacturing a semiconductor light emitting device according to (13), wherein the step of forming the second encapsulant for reflecting light in the cavity surrounded by the first encapsulant forms a metal film on the upper surface of the first encapsulant.

(14) The semiconductor light emitting device according to any one of the above items (1) to (4), wherein the mask is a dam and the opening of the mask is filled with the material forming the first sealing material ≪ / RTI >

(15) The method of manufacturing a semiconductor light emitting device according to any one of the preceding claims, wherein the step of forming a mask having at least one opening on a base includes a mask having an opening whose plane shape is one of a rectangular shape, a circular shape, and a polygonal shape.

(16) The method of manufacturing a semiconductor light emitting device according to any one of the preceding claims, wherein the step of providing a mask having at least one opening formed on a base includes a mask having an opening formed therein, the opening being reduced in width.

(17) The method of manufacturing a semiconductor light emitting device according to any one of the preceding claims, wherein the step of providing a mask having at least one opening formed on a base includes a mask having an opening formed therein, the opening increasing gradually as the width of the opening decreases.

(18) The semiconductor light emitting device according to any one of the preceding claims, wherein the upper surface of the first encapsulant includes a flat portion, and the second encapsulant is formed on a flat portion of the upper surface of the first encapsulant.

According to the semiconductor light emitting device and the manufacturing method of the present disclosure, it is possible to obtain a CSP type semiconductor light emitting device having high efficiency of light extracted from the side.

Further, according to the method of manufacturing a semiconductor light emitting device according to the present disclosure, the semiconductor light emitting device chip can be arranged at a more accurate position and angle by using the mask as a guide pattern of the semiconductor light emitting device chip array. Therefore, the occurrence of defects due to errors in the alignment of the semiconductor light-emitting device chips in a post-process, for example, a separation process (e.g., sawing, etc.) into individual devices is reduced.

Compared with a method in which a mask is provided on a tape on which semiconductor light emitting device chips are arranged and a sealing material is supplied after an additional process of filling the empty space in the tape or correcting the angle of the broken semiconductor light emitting device chip, The method according to the present invention is efficient because the above-mentioned additional process is not necessary.

Semiconductor light-emitting device chips: 101, 810, 1200, 1650
Semiconductor light emitting devices: 800, 1420, 1500, 1600, 1640, 1700, 1800, 1900
Base: 201, 1000
Mask: 301, 1100
Opening of the mask: 305, 1110
Sealing material: 170, 820, 830, 1300, 1400, 1520, 1530, 1620, 1630, 1660, 1670 1720, 1730, 1820, 1830

Claims (18)

In the semiconductor light emitting device,
A semiconductor light emitting device chip comprising: a plurality of semiconductor layers including an active layer that generates light by recombination of electrons and holes; and an electrode electrically connected to the plurality of semiconductor layers;
A first encapsulant disposed on the semiconductor light emitting device chip so as to cover the upper surface of the semiconductor light emitting device chip, wherein the upper surface of the first encapsulant, which is at least partially separated from the upper surface of the semiconductor light emitting device chip, A first encapsulant including a cavity surrounded by the first encapsulant; And
And a second encapsulant that is formed in the cavity of the first encapsulant and reflects light emitted from the upper surface of the semiconductor light emitting device chip to the side of the semiconductor light emitting device,
Wherein the first encapsulant is made of a transmissive material and the second encapsulant is made of a reflective material. The method according to claim 1,
Wherein the first encapsulant surrounds a side surface of the semiconductor light emitting device chip. delete The method according to claim 1,
Wherein the ratio of the height of the highest point of the first encapsulant to the width of the first encapsulant is 1: 2. delete delete The method according to claim 1,
And the second encapsulant is formed of a metal film on the upper surface of the first encapsulant. delete The method according to claim 1,
The first encapsulant top surface comprises a flat portion,
And the second encapsulant is also formed on a flat portion of the upper surface of the first encapsulant. delete delete delete delete delete delete delete delete delete

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