Nothing Special   »   [go: up one dir, main page]

KR101808922B1 - Wafer processing tape - Google Patents

Wafer processing tape Download PDF

Info

Publication number
KR101808922B1
KR101808922B1 KR1020150170649A KR20150170649A KR101808922B1 KR 101808922 B1 KR101808922 B1 KR 101808922B1 KR 1020150170649 A KR1020150170649 A KR 1020150170649A KR 20150170649 A KR20150170649 A KR 20150170649A KR 101808922 B1 KR101808922 B1 KR 101808922B1
Authority
KR
South Korea
Prior art keywords
adhesive layer
film
adhesive
release film
support member
Prior art date
Application number
KR1020150170649A
Other languages
Korean (ko)
Other versions
KR20160067759A (en
Inventor
지로우 스기야마
마사미 아오야마
노보루 사꾸마
사또시 오따
가즈히로 기무라
Original Assignee
후루카와 덴키 고교 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 후루카와 덴키 고교 가부시키가이샤 filed Critical 후루카와 덴키 고교 가부시키가이샤
Publication of KR20160067759A publication Critical patent/KR20160067759A/en
Application granted granted Critical
Publication of KR101808922B1 publication Critical patent/KR101808922B1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Dicing (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Adhesive Tapes (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The present invention provides a wafer processing tape capable of reducing occurrence of a label mark and reducing air entrainment between an adhesive layer and an adhesive film.
A release film 11 formed on the first surface of the release film 11 and having a predetermined planar shape formed on the first surface of the release film 11 and an adhesive layer 12 covering the adhesive layer 12, An adhesive film 13 having a label portion 13a having a predetermined planar shape and contacting with the release film 11 and a peripheral portion 13b surrounding the outer side of the label portion 13a; And is provided on one of the short sides of the release film 12 and is provided on one side of the label portion 13a which is in contact with the release film 12 And a support member (14) provided in an area corresponding to the area of the first surface.

Description

Wafer processing tape {WAFER PROCESSING TAPE}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer processing tape, and more particularly, to a wafer processing tape having two functions of a dicing tape and a die bonding film.

BACKGROUND ART [0002] In recent years, there have been proposed dicing tapes for fixing semiconductor wafers when semiconductor wafers are cut and separated (diced) into individual chips, for adhering a cut semiconductor chip to a lead frame or a package substrate, , And a die bonding film (also referred to as a die attach film) for laminating and bonding semiconductor chips to each other have been developed.

Such a dicing / die bonding tape has been subjected to free cutting in consideration of workability such as adhesion to a wafer and mounting to a ring frame at the time of dicing.

Examples of the pre-cut dicing die bonding tape are shown in Figs. 4 and 5. Fig. Fig. 5 is a plan view of the dicing / die bonding tape. Fig. 5 (b) is a cross-sectional view taken along line sectional view taken along the line BB in FIG. The dicing / die bonding tape 50 includes a release film 51, an adhesive layer 52, and an adhesive film 53. The adhesive layer 52 is formed into a circular shape corresponding to the shape of the wafer, and has a circular label shape. The adhesive film 53 has a peripheral portion of a circular portion corresponding to the shape of the ring frame for dicing removed and has a circular label portion 53a and a peripheral portion 53b surrounding the circular label portion 53a as shown in the figure . The circular label portion 53a of the adhesive film 52 and the circular label portion 53a of the adhesive film 53 are stacked with their centers aligned and the circular label portion 53a of the adhesive film 53 covers the adhesive layer 52, And is in contact with the release film 51 in the periphery thereof.

The dicing film 51 is peeled from the adhesive layer 52 and the adhesive film 53 in the laminated state to dice the semiconductor wafer W And the dicing ring frame R is adhered and fixed to the outer peripheral portion of the circular label portion 53a of the adhesive film 53. [ In this state, the semiconductor wafer W is diced, and then the adhesive film 53 is subjected to a hardening treatment such as ultraviolet irradiation to pick up the semiconductor chips. At this time, since the adhesive force of the adhesive film 53 is lowered by the curing treatment, the adhesive film 53 is easily peeled off from the adhesive layer 52, and the semiconductor chip is picked up with the adhesive layer 52 adhered to the back surface. The adhesive layer 52 attached to the back surface of the semiconductor chip then functions as a die bonding film when the semiconductor chip is bonded to a lead frame, a package substrate, or another semiconductor chip.

The dicing and die bonding tape 50 as described above has a portion where the adhesive layer 52 and the circular label portion 53a of the adhesive film 53 are laminated on the peripheral portion 53b of the adhesive film 53 ). The stepped portion of the adhesive layer 52 and the laminated portion of the circular label portion 53a of the adhesive film 53 and the peripheral portion 53a of the adhesive film 53 overlap when the product is wound in the form of a roll, A phenomenon that a step is transferred onto the surface of the flexible adhesive layer 52, that is, a transfer mark (also referred to as a label mark, a wrinkle, or a winding mark) as shown in Fig. 7 occurs. The occurrence of such a transfer mark is conspicuous particularly when the adhesive layer 52 is formed of a flexible resin, when the adhesive layer 52 is thick and when the dicing / die bonding tape 50 is wound many times. If a transfer mark occurs, there is a possibility that a problem may occur at the time of processing the wafer due to adhesion failure between the adhesive layer and the semiconductor wafer.

In order to solve such a problem, a wafer processing tape having a support member on both sides in the short direction on the second surface opposite to the first surface provided with the adhesive layer and the adhesive film of the release film has been developed (See, for example, Patent Document 1). Since the wafer processing tape is provided with the supporting member, when the wafer processing tape is wound in the form of a roll, the winding pressure applied to the tape can be dispersed or collected in the supporting member, Can be suppressed.

Japanese Patent No. 4360653

Although the adhesive film covers the adhesive layer and contacts the release film around the adhesive layer, extremely small voids are generated between the release film and the adhesive film depending on the thickness of the adhesive layer, and air (air) may remain . In the wafer processing tape described in Patent Document 1, since the support members are provided at both end portions in the short direction of the release film, in the state that the wafer processing tape is wound in a roll form, the gap between the label portion and the release film wound thereon is a hollow structure There is a problem that the air (air) moves and may invade between the adhesive layer and the adhesive film. Air (air) penetrating between the adhesive layer and the pressure-sensitive adhesive film is also referred to as a void, which causes defective bonding to the semiconductor wafer W and causes the subsequent dicing of the semiconductor wafer W, The yield in the process may be lowered.

Therefore, the present invention can reduce the occurrence of the label marks, and can select the support member regardless of the thickness of the adhesive layer, and reduce the air (air) being entrained between the adhesive layer and the adhesive film And a tape for processing a wafer.

In order to solve the above problems, a wafer processing tape according to the present invention comprises: a long release film; an adhesive layer having a predetermined planar shape formed on the first surface of the release film; An adhesive film having a label portion having a predetermined planar shape provided to contact the release film around the adhesive layer and a peripheral portion surrounding the outer side of the label portion; Which is opposite to the first surface and which is provided at either one of the shorter sides of the release film and which is located in a region corresponding to the area of the first surface, And a support member provided on the support member.

It is preferable that the ratio T / t of the thickness T of the support member to the thickness t of the adhesive layer of the semiconductor processing tape is 1.2 or more.

It is preferable that the width of the support member is 20 mm or more, and the support member is not caught in the region corresponding to the adhesive layer.

According to the present invention, it is possible to reduce the occurrence of label marks and to reduce the entrainment of air between the adhesive layer and the adhesive film.

Fig. 1 (a) is a plan view of a wafer processing tape according to an embodiment of the present invention, and Fig. 1 (b) is a sectional view taken along the line AA in Fig.
2 is a sectional view of a wafer processing tape according to another embodiment of the present invention.
3 is a sectional view of a wafer processing tape according to another embodiment of the present invention.
4 is a perspective view of a conventional wafer processing tape.
FIG. 5A is a plan view of a conventional wafer processing tape, and FIG. 5B is a cross-sectional view taken along the line BB in FIG.
6 is a cross-sectional view showing a state in which a wafer processing tape and a dicing ring frame are bonded;
7 is a schematic view for explaining a problem of a conventional wafer processing tape.

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Fig. 1 (a) is a plan view of a wafer processing tape (dicing and die bonding tape) according to an embodiment of the present invention, and Fig. 1 (b) is a sectional view taken along line A-A in Fig.

1 (a) and 1 (b), the wafer processing tape 10 includes a long release film 11, an adhesive layer 12, an adhesive film 13, And a support member (14).

The adhesive layer 12 is formed on the first surface of the release film and has a circular label shape corresponding to the shape of the wafer. The adhesive film 13 has a circular label portion 13a covering the adhesive layer 12 and provided so as to come into contact with the release film around the adhesive layer 12 and a circular label portion 13b surrounding the circular label portion 13a And a peripheral portion 13b. The peripheral portion 13b includes a shape that completely surrounds the outside of the circular label portion 13a and a shape that is not completely surrounded as shown in the figure. The circular label portion 13a has a shape corresponding to the ring frame for dicing. The support member 14 is a second surface 11b of the release film 11 opposite to the first surface 11a on which the adhesive 12 and the adhesive film 13 are provided, 11 in the short direction.

Hereinafter, each component of the wafer processing tape 10 of the present embodiment will be described in detail.

(Release film)

Examples of the release film 11 used for the wafer processing tape 10 of the present invention include polyesters (PET, PBT, PEN, PBN, PTT), polyolefins (PP, PE), copolymers (EVA, EEA, EBA ), Or a film in which these materials are partially substituted to further improve the adhesiveness and mechanical strength can be used. Further, these films may be laminated.

The thickness of the release film is not particularly limited and may be appropriately set, but it is preferably 25 to 50 占 퐉.

(Adhesive layer)

The adhesive layer 12 of the present invention is formed on the first surface 11a of the release film 11 as described above and has a circular label shape corresponding to the shape of the wafer.

The adhesive layer 12 is attached to the back surface of the chip when the semiconductor wafer or the like is bonded and diced and then picked up, and is used as an adhesive for fixing the chip to the substrate or the lead frame. As the adhesive layer 12, a point adhesive containing at least one kind selected from an epoxy resin, an acrylic resin and a phenol resin can be preferably used. In addition, a polyimide resin or a silicone resin may be used. The thickness may be appropriately set, but it is preferably about 5 to 100 mu m.

(Adhesive film)

As described above, the adhesive film 13 of the present invention has a circular label portion 13a corresponding to the shape of the ring frame for dicing and a peripheral portion 13b surrounding the circular label portion 13a. Such a pressure-sensitive adhesive film can be formed by removing the peripheral area of the circular label portion 13a from the film-shaped pressure-sensitive adhesive by free cutting.

As the adhesive film 13, there is no particular limitation, and when the wafer is diced, it has a sufficient adhesive force not to peel the wafer, and when the chip is picked up after dicing, the adhesive film 13 exhibits a low adhesive force so as to be easily peeled off from the adhesive layer do. For example, a substrate having a pressure-sensitive adhesive layer formed thereon can be suitably used.

The base film of the adhesive film 13 is not particularly limited as long as it is conventionally known and can be used. When a radiation curable material is used as a pressure sensitive adhesive layer described later, it is preferable to use a material having radiation permeability.

Examples of the material include polyethylene, polypropylene, ethylene-propylene copolymer, polybutene-1, poly-4-methylpentene-1, ethylene-vinyl acetate copolymer, ethylene- Homopolymers or copolymers of? -Olefins such as methyl acrylate, methyl acrylate, ethylene-acrylic acid copolymer and ionomer, or mixtures thereof; Thermoplastic elastomers, and mixtures thereof. The base film may be a mixture of two or more kinds of materials selected from these groups, or may be a single layer or a multi-layered film.

The thickness of the base film is not particularly limited and may be appropriately set, but it is preferably 50 to 200 占 퐉.

The resin used for the pressure-sensitive adhesive layer of the pressure-sensitive adhesive film 13 is not particularly limited, and known chlorinated polypropylene resin, acrylic resin, polyester resin, polyurethane resin, epoxy resin and the like used for the pressure-sensitive adhesive can be used.

A pressure-sensitive adhesive is preferably prepared by appropriately blending an acrylic pressure-sensitive adhesive, a radiation-polymerizable compound, a photopolymerization initiator, a curing agent and the like into the resin of the pressure-sensitive adhesive layer 13. The thickness of the pressure-sensitive adhesive layer 13 is not particularly limited and may be appropriately set, but it is preferably 5 to 30 占 퐉.

The radiation-polymerizable compound can be mixed with the pressure-sensitive adhesive layer and easily peeled from the adhesive layer by radiation curing. As the radiation polymerizing compound, for example, a low-molecular compound having at least two photopolymerizable carbon-carbon double bonds in molecules capable of three-dimensionally retreating by light irradiation is used.

Specific examples include trimethylolpropane triacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate, 1,4-butylene Glycol diacrylate, 1,6-hexanediol diacrylate, polyethylene glycol diacrylate, oligoester acrylate, and the like are applicable.

In addition to the above acrylate compounds, urethane acrylate oligomers may also be used. The urethane acrylate oligomer is obtained by reacting a polyol compound such as polyester type or polyether type with a polyisocyanate compound (for example, 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene Acrylate or methacrylate having a hydroxyl group (for example, 2 (meth) acrylate, 2-ethylhexyl acrylate or 2-ethylhexyl acrylate) is added to a terminal isocyanate urethane prepolymer obtained by reacting a diisocyanate, Hydroxyethyl acrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl acrylate, 2-hydroxypropyl methacrylate, polyethylene glycol acrylate, polyethylene glycol methacrylate) .

The pressure-sensitive adhesive layer may be a mixture of two or more kinds selected from the above-mentioned resins.

When a photopolymerization initiator is used, for example, isopropylbenzoin ether, isobutylbenzoin ether, benzophenone, Michler's ketone, chlorothioxanthone, dodecylthioxanthone, dimethylthioxanthone, diethylthioxanthone , Benzyl dimethyl ketal,? -Hydroxycyclohexyl phenyl ketone, 2-hydroxymethylphenyl propane and the like can be used. The blending amount of these photopolymerization initiators is preferably 0.01 to 5 parts by mass relative to 100 parts by mass of the acrylic copolymer.

(Supporting member)

The support member 14 is a second surface 11b opposite to the first surface 11a of the release film 11 on which the adhesive 12 and the adhesive film 13 are provided, And is provided at one of the ends in the short direction. By providing the support member 14 in this manner, the winding pressure applied to the tape can be dispersed or collected in the support member 14 when the wafer for processing tape 10 is wound in the form of a roll, It is possible to suppress the formation of a transfer mark on the photosensitive drum 12.

The support member 14 is provided at one end of the release film 11 in one of the short sides so that the release film 11 and the circular label portion 11 are separated from the other end side by the thickness of the adhesive layer 12. [ (Air) remaining in the gap generated between the circular label portions 13a is discharged to the outside of the circular label portion 13a.

In the case where the support member is formed on the first surface 11a provided with the adhesive 12 and the adhesive film 13, the width of the support member is limited, whereas in the configuration of the present embodiment, 14) can be ensured widely, and the occurrence of a transfer mark can be suppressed more effectively. It is also preferable that the width of the support member 14 is 20 mm or more so as not to be caught in a region corresponding to the adhesive layer 12. The width of the support member 14 can surely prevent the occurrence of a transferring station when the width of the support member 14 is as large as possible. However, when the support member 14 is caught by the area corresponding to the adhesive layer 12, So that it becomes difficult for the tape to be wound to be stable when the tape 10 for processing a wafer is wound in a roll shape.

In addition, by providing the support member 14 on the second surface 11b of the release film 11, the effect that the allowance for the positional deviation of the support member 14 is increased can be obtained.

The supporting member 14 is provided on the second surface 11b of the release film 11 in a region corresponding to the outside of the adhesive layer 12 formed on the first surface, that is, on the second surface 11b, It is preferable to provide the adhesive layer 12 in the region r from the end of the release film 11 to the adhesive layer 12 as shown in Fig. With this structure, when the tape 10 is wound, the adhesive layer 12 and the support member 14 provided on the second surface 11b of the release film 11 do not overlap each other, The marks of the member 14 are prevented from flying. 1, the support member 14 is provided at one end on the right side of the paper, but it may be provided at either end in the short direction of the release film 11, or may be provided on the left side of the paper.

The thickness of the support member 14 is preferably set such that the laminated portion of the adhesive layer 12 and the circular label portion 13a of the adhesive film 13 and the peripheral portion of the adhesive film 13 The thickness T of the support member 14 and the thickness T of the adhesive layer 12 may be set to be equal to or greater than the thickness of the adhesive layer 12, 12) of the thickness t is preferably 1.2 or more. 2 is a cross-sectional view showing an example of a support member 14 'which is thicker than the adhesive layer 12.

The support member has such a thickness that the adhesive film 13 and the second surface 11b of the release film 11 overlapping the surface of the adhesive film 13 come into contact with each other or come into contact with each other The second surface 11b of the release film 11 is not strongly pressed to the flexible adhesive layer 12 through the adhesive film 13. [ Therefore, it is possible to further effectively suppress the occurrence of the transfer-use mark.

The support member 14 can be intermittently or continuously provided along the long (length) direction of the release film 11, but it is preferable that the longitudinal direction of the base film 11 is It is preferable to install them continuously.

The supporting member 14 is preferably made of a material having a certain degree of friction coefficient with respect to the adhesive film 13 from the viewpoint of preventing the winding off of the wafer 10 for tape processing. As a result, it is possible to prevent winding displacement of the tape 10 for wafer processing, and to achieve high-speed winding and increasing the number of windings.

The coefficient of static friction between the support member 14 and the base film of the adhesive film 13 is preferably 0.2 to 2.0, more preferably 0.6 to 1.6. The peripheral portion 13a of the adhesive film 13 provided on the first surface 11a side of the release film 11 and the peripheral portion 13b of the release film 11 on the second surface 11b side If the coefficient of static friction between the supporting member 14 and the base film of the adhesive film 13 is as small as less than 0.2, the winding deviation is apt to occur at the time of manufacture or use The handling property deteriorates. On the other hand, if it is larger than 2.0, the resistance between the base film and the supporting member 14 of the adhesive film 13 becomes excessively large, which leads to deterioration of the handling property in the manufacturing process, do. Therefore, by setting the coefficient of static friction therebetween within the above range, it is possible to prevent winding deviation of the wafer 10 for tape processing, to achieve high-speed winding and to increase the number of windings.

In the present invention, the coefficient of static friction between the support member 14 and the base film of the adhesive film 13 can be obtained by the following measurement method in accordance with JIS K7125.

The base film of the adhesive film 13 and the both film samples of the support member 14, which are respectively cut to 25 mm (width) x 100 mm (length), are overlapped and the lower film is fixed. Subsequently, a weight of 200 g in weight was placed as a load W on the laminated film, and the upper film was pulled at a speed of 200 mm / min, and the force Fd (g) at the time of slipping was measured. The friction coefficient (μd) is obtained.

μd = Fd / W

As the support member 14, for example, a dicing tape in which a point adhesive is applied to a resin film base can be suitably used. The tape 10 for wafer processing of the present embodiment can be formed by adhering such a viscous adhesive tape to predetermined positions of both end portions of the second surface 11b of the release film 11. [

The base resin of the viscous adhesive tape is not particularly limited as long as it meets the range of the linear expansion coefficient and can withstand the winding pressure. However, from the viewpoints of heat resistance, smoothness and availability, polyethylene terephthalate (PET) And high-density polyethylene.

The composition and physical properties of the pressure-sensitive adhesive of the pressure-sensitive adhesive tape are not particularly limited and may be those that can not be peeled off from the release film 11 in the winding process and the storage process of the wafer for processing tape 10.

As the support member 14, a colored support member may be used. By using such a coloring and supporting member, the type of tape can be clearly identified when the wafer for processing tape is wound in a roll form. For example, by changing the color of the coloring supporting member 14 according to the type and thickness of the wafer processing tape, it is possible to easily identify the type and thickness of the tape and suppress or prevent the occurrence of an artificial mist .

[Example]

Next, examples of the present invention will be described, but the present invention is not limited to these examples.

(1) Production of adhesive film

(Adhesive film 1A)

A mixed solution of 128 g of n-butyl acrylate, 307 g of 2-ethylhexyl acrylate, 67 g of methyl methacrylate, 1.5 g of methacrylic acid and benzoyl peroxide as a polymerization initiator was added dropwise to 400 g of toluene as a solvent, , The reaction temperature and the reaction time were adjusted to obtain a solution of the compound (1) having a functional group.

Next, 2.5 g of 2-hydroxyethyl methacrylate synthesized from methacrylic acid and ethylene glycol as a compound (2) having a radiation-curable carbon-carbon double bond and a functional group was added to this polymer solution, and hydroquinone And the reaction temperature and the reaction time were adjusted to obtain a solution of the compound (A) having a radiation-curable carbon-carbon double bond. Subsequently, 1 part by mass of Coronate L manufactured by Nippon Polyurethane Industry Co., Ltd. as a polyisocyanate (B) was added to 100 parts by mass of the compound (A) in the compound (A) solution, , 0.5 part by mass of Cure 184 and 150 parts by mass of ethyl acetate as a solvent were added to and mixed with the compound (A) solution to prepare a radiation-curable pressure-sensitive adhesive composition.

Subsequently, the prepared pressure-sensitive adhesive layer composition was applied to an ethylene-vinyl acetate copolymer base film having a thickness of 100 占 퐉 so as to have a dry film thickness of 20 占 퐉 and dried at 110 占 폚 for 3 minutes to prepare an adhesive film 1A.

(2) Release film

The release film 2A shown below was used.

Release film 2A: A polyethylene terephthalate film having a thickness of 38 mu m and subjected to release treatment

(3) Formation of adhesive layer

(Adhesive layer 3A)

50 parts by mass of a cresol novolak epoxy resin (epoxy equivalent: 197, molecular weight: 1200, softening point: 70 占 폚) as an epoxy resin, 1.5 parts by mass of? -Mercaptopropyltrimethoxysilane as a silane coupling agent,? -Ureidopropyltriethoxy 3 parts by mass of silane, and 30 parts by mass of a silica filler having an average particle diameter of 16 nm, cyclohexanone was added, and the mixture was stirred and kneaded for 90 minutes using a bead mill.

100 parts by mass of an acrylic resin (mass average molecular weight: 80,000, glass transition temperature-17 占 폚), 5 parts by mass of dipentaerythritol hexaacrylate as a hexafunctional acrylate monomer, 5 parts by mass of hexamethylene diisocyanate as a curing agent And 2.5 parts by mass of Cure Sol 2PZ (trade name, 2-phenylimidazole available from Shikoku Chemicals Co., Ltd.) were added, stirred and mixed, and vacuum degassed to obtain an adhesive.

The adhesive was applied onto the release film 2A and heated and dried at 110 DEG C for 1 minute to form a coating film in a B-stage state (intermediate state of curing of the thermosetting resin) having a thickness of 20 mu m, 3A was formed and stored in the refrigerator.

(Adhesive layer 3B)

The adhesive was applied onto the release film 2A and heated and dried at 110 DEG C for 1 minute to form a coating film in a B-stage state (intermediate state of curing of the thermosetting resin) having a thickness of 60 mu m, 3B were formed and stored in the refrigerator.

(Adhesive layer 3C)

The adhesive was applied onto the release film 2A and heated and dried at 110 DEG C for 1 minute to form a coating film in a state of B stage (curing intermediate state of the thermosetting resin) having a thickness of 120 mu m, 3C were formed and stored in a refrigerator.

(4) Production of Supporting Member

(Supporting member 4A)

, 100 parts by mass of an acrylic resin (mass average molecular weight: 600,000, glass transition temperature -20 占 폚) and 10 parts by mass of a polyisocyanate compound (trade name: Coronate L, trade name; manufactured by Nippon Polyurethane Co., Ltd.) as a curing agent were mixed to obtain a pressure- .

The pressure-sensitive adhesive composition was coated on a polytetrafluoroethylene film having a thickness of 30 占 퐉 so as to have a dry film thickness of 5 占 퐉 and dried at 110 占 폚 for 3 minutes. The obtained viscous adhesive tape was cut into a width of 25 mm, 4A.

(Supporting member 4B)

The pressure-sensitive adhesive composition was coated on a low-density polyethylene film having a thickness of 40 占 퐉 so as to have a dry film thickness of 32 占 퐉 and dried at 110 占 폚 for 3 minutes. The resulting viscous tape was cut into a width of 25 mm, Respectively.

(Supporting member 4C)

The pressure-sensitive adhesive composition was coated on a low-density polyethylene film having a thickness of 40 占 퐉 to a dry film thickness of 20 占 퐉 and dried at 110 占 폚 for 3 minutes. The resulting viscous tape was cut into a width of 25 mm, Respectively.

(Supporting member 4D)

The pressure-sensitive adhesive composition was coated on a polyethylene terephthalate film having a thickness of 100 占 퐉 to a dry film thickness of 45 占 퐉 and dried at 110 占 폚 for 3 minutes. The resulting viscous tape was cut into a width of 25 mm, Respectively.

(Example 1)

The releasing film 2A on which the adhesive layer 3A that had been kept in the refrigerator was formed was returned to room temperature and the adhesive layer was adjusted so that the depth of insertion into the releasing film was 10 mu m or less and circular cut-off processing with a diameter of 220 mm was carried out. Thereafter, the unnecessary portion of the adhesive layer was removed, and the release film 2A was laminated at room temperature so that the pressure-sensitive adhesive film 1A was in contact with the adhesive layer. Then, the pressure-sensitive adhesive film 1A was adjusted so that the infeed depth into the release film was 10 占 퐉 or less, and the circular free-cut processing was performed in a concentric circle shape with a diameter of 290 mm. Next, the second surface opposite to the first surface provided with the adhesive layer and the adhesive film of the release film 2A, and the support member 4A bonded to one end of the release film 2A in the short direction, In the same manner as in Example 1 was produced.

(Example 2)

A wafer processing tape of Example 2 was produced in the same manner as in Example 1 except that the support member 4B was used instead of the support member 4A.

(Example 3)

A wafer processing tape of Example 3 was produced in the same manner as in Example 1 except that the support member 4C was used instead of the support member 4A and the adhesive layer 3B was used in place of the adhesive layer 3A.

(Example 4)

A wafer processing tape of Example 4 was produced in the same manner as in Example 2 except that the adhesive layer 3B was used instead of the adhesive layer 3A.

(Example 5)

A wafer processing tape of Example 5 was produced in the same manner as in Example 3 except that the support member 4D was used instead of the support member 4C.

(Example 6)

A tape for wafer processing of Example 6 was prepared in the same manner as in Example 5 except that the adhesive layer 3C was used instead of the adhesive layer 3B.

(Comparative Example 1)

The releasing film 2A on which the adhesive layer 3A that had been kept in the refrigerator was formed was returned to room temperature and the adhesive layer was adjusted so that the depth of insertion into the releasing film was 10 mu m or less and circular cut-off processing with a diameter of 220 mm was carried out. Thereafter, the unnecessary portion of the adhesive layer was removed, and the release film 2A was laminated at room temperature so that the pressure-sensitive adhesive film 1A was in contact with the adhesive layer. Then, the pressure-sensitive adhesive film 1A was subjected to circular cut-off processing with a diameter of 290 mm in a concentric manner with the adhesive layer by adjusting the infeed depth into the release film to 10 m or less, leaving the circular label portion and peripheral portion, Lt; / RTI > Next, the adhesive layer of the release film 2A and the second surface opposite to the first surface provided with the adhesive film, and the support member 4A is bonded to both end portions of the release film 2A in the short direction, A wafer processing tape of Comparative Example 1 having a structure shown in FIG.

(Comparative Example 2)

A wafer processing tape of Comparative Example 2 was produced in the same manner as in Comparative Example 1 except that the support member 4B was used instead of the support member 4A and the adhesive layer 3B was used in place of the adhesive layer 3A.

(Comparative Example 3)

A wafer processing tape of Comparative Example 3 was produced in the same manner as in Comparative Example 1 except that the support member 4D was used instead of the support member 4A and the adhesive layer 3C was used in place of the adhesive layer 3A.

(Comparative Example 4)

A wafer processing tape of Comparative Example 4 was produced in the same manner as in Comparative Example 1 except that no supporting member was provided.

(Comparative Example 5)

A wafer processing tape of Comparative Example 5 was produced in the same manner as in Comparative Example 4 except that the adhesive layer 3B was used instead of the adhesive layer 3A.

(Comparative Example 6)

A wafer processing tape of Comparative Example 6 was produced in the same manner as in Comparative Example 4 except that the adhesive layer 3C was used instead of the adhesive layer 3A.

[Assessment of inhibition of label marks]

The wafer processing tapes of the examples and the comparative examples were wound into rolls so that the number of circular adhesive films became 300 pieces to prepare a tape roll for wafer processing. The obtained tape roll for wafer processing was stored in a refrigerator (5 캜) for one month. Thereafter, the wafer processing tape roll was returned to room temperature, the roll was released, the presence or absence of the label marks was observed with the naked eye, and the transfer marks of the wafer for processing processing in four steps of?,?,?, And? Was evaluated. The results are shown in Tables 1 and 2.

◎ (Superior product): Labeling marks can not be confirmed even by visual observation from various angles

○ (good): The label mark can be checked but it is not the degree that affects the processing process of the semiconductor device

△ (defective product): It is possible to identify the label mark which may affect the processing process of the semiconductor device

X (Defective product): When a deep label mark is generated and the semiconductor wafer is adhered to the adhesive layer, there is a fear that the air is entrained between the semiconductor wafer and the adhesive layer

[Evaluation of inhibition of air entrainment]

The wafer processing tapes of Examples and Comparative Examples were wound in rolls so that the number of circular adhesive films became 200 pieces to prepare a tape roll for wafer processing. The resulting wafer processing tape roll was placed in a packaging bag, stored in a refrigerator (5 ° C) for one month, and then stored in a dry ice atmosphere at -50 ° C for 3 days. Thereafter, the tape roll for wafer processing was returned to room temperature, the packaging bag was opened, the roll was loosened, and visually observed whether there was air entrapment between the adhesive layer and the circular label portion of the adhesive film was observed, The evaluation of inhibition of the air entrapment of the wafer processing tape was made by taking the results of those with no entrances and those with air entrainment as x (defective products). The results are shown in Tables 1 and 2.

Figure 112015117947212-pat00001

Figure 112015117947212-pat00002

As shown in Table 1, the wafer processing tapes according to Examples 1 to 6 are on the second surface opposite to the first surface of the release film, and the support member is provided on either end of the release film in the short direction So that the suppression of the label mark and the inhibition of air entrainment were all excellent.

On the contrary, as shown in Table 2, the tape for wafer processing according to Comparative Examples 1 to 3 in which the support members were provided at both ends of the release film was found to be inferior in suppressing the air entrainment. The wafer processing tapes according to Comparative Examples 4 to 6 in which the support members were not provided gave excellent results in suppressing air entrainment, but were inferior in inhibition of label marks.

10: Wafer processing tape
11: release film
12: adhesive layer
13: Adhesive film
13a: circular label portion
13b: peripheral portion
14, 14 ', 14 ": supporting member

Claims (3)

A long release film,
An adhesive layer having a planar shape formed on a first surface of the release film,
An adhesive film having a label portion covering the adhesive layer and having a planar shape provided so as to contact the release film around the adhesive layer and a peripheral portion surrounding the outer side of the label portion;
Wherein the release film is on a second surface opposite to the first surface provided with the adhesive layer and the adhesive film and is provided on one of the short sides of the release film, And a support member provided in an area corresponding to an area of the first surface overlapping with the area of the first surface. The method according to claim 1,
Wherein the ratio T / t of the thickness T of the support member to the thickness t of the adhesive layer is 1.2 or more. 3. The method according to claim 1 or 2,
Wherein the support member has a width of 20 mm or more and does not overlap a region corresponding to the adhesive layer.
KR1020150170649A 2014-12-04 2015-12-02 Wafer processing tape KR101808922B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014246314A JP2016111163A (en) 2014-12-04 2014-12-04 Tape for wafer processing
JPJP-P-2014-246314 2014-12-04

Publications (2)

Publication Number Publication Date
KR20160067759A KR20160067759A (en) 2016-06-14
KR101808922B1 true KR101808922B1 (en) 2017-12-13

Family

ID=56124813

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150170649A KR101808922B1 (en) 2014-12-04 2015-12-02 Wafer processing tape

Country Status (4)

Country Link
JP (1) JP2016111163A (en)
KR (1) KR101808922B1 (en)
CN (1) CN105694746B (en)
TW (1) TWI605103B (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008303386A (en) 2007-05-08 2008-12-18 Hitachi Chem Co Ltd Adhesive sheet, method for producing the same, method for producing semiconductor device using the adhesive sheet, and the semiconductor device
JP4360653B2 (en) 2007-09-14 2009-11-11 古河電気工業株式会社 Wafer processing tape
JP2013165168A (en) 2012-02-10 2013-08-22 Furukawa Electric Co Ltd:The Tape for wafer processing

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04360653A (en) 1991-06-06 1992-12-14 Tochigi Pref Gov Production of egg highly containing polybasic unsaturated fatty acid of hemp seed
KR101009122B1 (en) * 2007-09-14 2011-01-18 후루카와 덴키 고교 가부시키가이샤 Wafer-processing film
JP5737185B2 (en) * 2009-11-13 2015-06-17 日立化成株式会社 Semiconductor device, method for manufacturing semiconductor device, and semiconductor wafer with adhesive layer

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008303386A (en) 2007-05-08 2008-12-18 Hitachi Chem Co Ltd Adhesive sheet, method for producing the same, method for producing semiconductor device using the adhesive sheet, and the semiconductor device
JP4360653B2 (en) 2007-09-14 2009-11-11 古河電気工業株式会社 Wafer processing tape
JP2013165168A (en) 2012-02-10 2013-08-22 Furukawa Electric Co Ltd:The Tape for wafer processing

Also Published As

Publication number Publication date
JP2016111163A (en) 2016-06-20
KR20160067759A (en) 2016-06-14
TW201632599A (en) 2016-09-16
TWI605103B (en) 2017-11-11
CN105694746B (en) 2018-10-16
CN105694746A (en) 2016-06-22

Similar Documents

Publication Publication Date Title
JP4360653B2 (en) Wafer processing tape
JP6600297B2 (en) Sheet laminate for resin film formation
CN101569002A (en) Wafer processing tape
KR101574909B1 (en) Adhesive sheet
TWI519621B (en) A wafer for processing a wafer, and a method for manufacturing a semiconductor device using a wafer processing wafer
TWI504720B (en) Adhesive sheet
KR102171423B1 (en) Sheet for forming resin film
JP2016111158A (en) Tape for wafer processing
JP2011142206A (en) Dicing-die bonding tape and method of manufacturing the same
KR101809331B1 (en) Wafer processing tape
KR101808922B1 (en) Wafer processing tape
KR101819292B1 (en) Wafer processing tape
KR101828135B1 (en) Wafer processing tape
KR101847246B1 (en) Wafer processing tape
KR102637843B1 (en) Long laminated sheets and their wound bodies
JP2016111165A (en) Tape for wafer processing
KR20160067756A (en) Wafer processing tape

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant