KR101689015B1 - Liner assembly and wafer treatment equipment having the same - Google Patents

Abstract

The present invention relates to a liner assembly and a substrate processing apparatus, and more particularly, to a substrate processing apparatus that reduces gas consumption by minimizing a process region as an upper liner and a lower liner structure. A liner assembly according to an embodiment of the present invention is a tubular structure for forming a process region by a projecting portion protruding downwardly while surrounding a periphery of a showerhead, wherein an outer surface of the projecting portion is spaced apart from the chamber wall to form a pumping region, A top liner having a plurality of pumping holes formed in the protrusions, and a tubular body structure having a through-hole on a bottom surface, the bottom liner being movable up and down together with the movement of the susceptor. A substrate processing apparatus according to an embodiment of the present invention includes a showerhead for spraying a substrate processing material at the time of a process, a chamber having an exhaust passage and subjected to substrate processing, a susceptor for supporting the substrate, A top liner in which a plurality of pumping holes are formed in the protrusion, the outer surface of the protrusion being spaced apart from the chamber wall to form a pumping region; And a lower liner that surrounds at least a part of the outer and lower surfaces of the susceptor and moves up and down together with the susceptor.

Description

Technical Field [0001] The present invention relates to a liner assembly and a substrate processing apparatus having the same,

The present invention relates to a liner assembly and a substrate processing apparatus, and more particularly, to a substrate processing apparatus that reduces gas consumption by minimizing a process region as an upper liner and a lower liner structure.

With the development of next-generation semiconductors, micro electro mechanical systems (MEMS), and nano device technology, formation of ultrafine patterns, precise process control, and processing of large-diameter substrates have become important issues. Accordingly, the proportion occupied by the plasma process is increasing, and large-scale high-density plasma formation and control techniques are essential.

A plasma processing apparatus places a substrate between an upper electrode and a lower electrode and applies a high frequency power to the upper electrode to form an electric field between the upper electrode and the lower electrode so that the reaction gas is plasmaized to proceed with the plasma treatment process. In plasma, there are numerous ions activated by a high frequency electric field and active species such as radicals. However, in the plasma treatment process, most of the active species contribute to the processing of the substrate, but a part of the active species diffuses out of the plasma reaction space into the chamber side wall and the like. The active species diffused into the chamber inner sidewall etches the sidewall in the chamber, thereby exposing the metal in the sidewall of the chamber and causing arcing. In addition, by-products such as polymer generated during the etching process may not be completely exhausted through the exhaust port, and may be deposited on the sidewalls of the chamber. Such etching and deposition of the sidewall in the chamber may result in a significant change in the process parameters in the chamber during the process, which may degrade process efficiency and become a source of contamination to the substrate.

Therefore, a liner is provided on the inner wall of the chamber to prevent etching and deposition of the inner wall of the chamber. The liner is made of a material such as ceramic at least 0.005 inches (127 mm) thick to protect the side walls within the chamber. The liner has various advantages such as excellent corrosion resistance, abrasion resistance, heat resistance and protecting the chamber from corrosion. Such liners are generally installed in the chamber inner and lower walls. For this purpose, a cylindrical liner is installed inside the chamber as a single cylindrical structure.

However, as described above, when the structure has a single cylindrical liner placed on the entire inner side wall of the chamber, it has inefficiency that the liner is installed to an unnecessary region where no process gas and cleaning gas flow. Further, in the case of the lower exhaust structure, there is no problem to install the liner on the entire inner side wall of the chamber. However, there is a problem that the cylindrical liner can not be applied in the case of a structure for exhausting down along the inner side wall of the chamber. Further, when the entire inner side wall of the chamber is provided with a liner, there is a problem that the process area is increased.

The technical problem of the present invention is to prevent the deposition of unnecessary portions during the process inside the chamber. In addition, the technical problem of the present invention is to minimize the process area where the plasma process is performed. Further, the technical problem of the present invention is to achieve plasma stabilization. Further, the technical problem of the present invention is to make the flow of exhaust gas uniform.

A liner assembly according to an embodiment of the present invention is a tubular structure for forming a process region by a projecting portion protruding downwardly while surrounding a periphery of a showerhead, wherein an outer surface of the projecting portion is spaced apart from the chamber wall to form a pumping region, A top liner having a plurality of pumping holes formed in the protrusions, and a tubular body structure having a through-hole on a bottom surface, the bottom liner being movable up and down together with the movement of the susceptor.

The upper liner includes a body portion having a side wall of the shower head having a stepped structure and surrounding the upper sidewall of the step, a plurality of pumping holes formed in a downward direction to surround the lower sidewall of the step, And a projection that forms the process region and forms the pumping region between the outer surface and the chamber wall.

In the lower liner, the bottom surface of the tubular body and the lower end of the lift pin of the susceptor are fixedly connected to each other, and the tubular body moves up and down together with the vertical movement of the susceptor.

A substrate processing apparatus according to an embodiment of the present invention includes a showerhead for spraying a substrate processing material at the time of a process, a chamber having an exhaust passage and subjected to substrate processing, a susceptor for supporting the substrate, A top liner in which a plurality of pumping holes are formed in the protrusion, the outer surface of the protrusion being spaced apart from the chamber wall to form a pumping region; And a lower liner that surrounds at least a part of the outer and lower surfaces of the susceptor and moves up and down together with the susceptor.

The showerhead has a structure vertically opened by driving up and down cylinders, and the inner surface of the chamber contacting the pumping area is protected by a liner. The inner side diameter of the lower liner is larger than the outer side diameter of the upper liner. And a shaft coupled to one surface of the susceptor to vertically move the susceptor. A baffle is provided in the exhaust passage, and an inner wall of the chamber facing the protrusion is cut in a stepped manner.

According to the embodiment of the present invention, the process liner can be minimized by raising the susceptor together with the lower liner to form a process region. In addition, according to the embodiment of the present invention, by minimizing the process region, the amount of process gas used can be greatly reduced, thereby preventing deposition of unnecessary portions during the process. Further, according to the embodiment of the present invention, the flow of exhaust gas can be made uniform, thereby stabilizing the plasma. Further, according to the embodiment of the present invention, the process chamber size can be miniaturized with optimization, which is advantageous for multi-chamber operation.

1 is a cross-sectional view of a plasma processing apparatus according to an embodiment of the present invention.
2 is a view illustrating a state in which a showerhead is vertically opened according to an embodiment of the present invention.
FIG. 3 is a view illustrating a state in which a pumping region is formed by stepping a chamber wall according to an embodiment of the present invention.
4 is a top view and a bottom view of a top liner according to an embodiment of the present invention.
FIG. 5 is a top view of a lower liner according to an embodiment of the present invention. FIG.
FIG. 6 is a view showing an inclined side end of a lower liner according to an embodiment of the present invention. FIG.
FIG. 7 is a view illustrating a structure in which a weight center member is provided on a lower liner according to an embodiment of the present invention. FIG.
8 is a view illustrating a structure in which a lower liner has a double-wall structure according to an embodiment of the present invention.
FIG. 9 is a view illustrating a state in which a lower portion is exhausted along a side wall according to an embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. It will be apparent to those skilled in the art that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, It is provided to let you know. Wherein like reference numerals refer to like elements throughout.

1 is a cross-sectional view of a plasma processing apparatus according to an embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described by way of example of a plasma processing apparatus as an example of a substrate processing apparatus, but it will be apparent that the present invention can be applied to various substrate processing apparatuses, not limited to a plasma processing apparatus.

A plasma processing apparatus, which is an example of a substrate processing apparatus according to an embodiment of the present invention, includes a chamber 100 in which a plasma process is performed, a susceptor 200 positioned in the chamber for supporting and heating the substrate, And a showerhead 300 disposed corresponding to the upper side of the substrate S for spraying a substrate processing gas raw material onto the substrate S.

In addition, although not shown, a power supply unit disposed outside the chamber 100 and supplying power to the heating element of the susceptor 200 is also included. A pressure holding unit for keeping the pressure inside the chamber 100 constant; and an exhaust unit for exhausting by-products and unreacted materials in the chamber 100.

The chamber 100 is formed into a cylindrical shape having an inner space. The chamber 100 is not limited to the cylindrical shape, and the shape of the chamber 100 may be variously changed. Such a chamber 10 may be manufactured to be separated into a chamber lid, which is a chamber body and a chamber lid, although not shown. Thereby, the apparatuses installed in the chamber 100 and the chamber 100 can be maintained. Although not shown, a separate chamber lead may be provided above the showerhead 300 to open the showerhead together when the showerhead is opened to maintain the devices installed inside the chamber. Or a structure in which a showerhead is buried in the chamber lid and integrated.

A substrate transfer path is provided at one side of the chamber 100, which is an entrance and exit through which the substrate S enters and exits, and a separate opening and closing means for opening and closing the substrate transfer path, for example, a gate valve and a slat valve are provided. An exhaust passage is formed on the bottom surface of the chamber 100. An exhaust passage 111 is formed in the periphery of the shaft 210 supporting the susceptor 200 to exhaust gas to the outside of the chamber. A baffle 120 may be formed between the outer surface of the shaft 210 and the inner surface of the exhaust passage 111. The baffle 120 allows the flow of gas exhausted through the exhaust passage 111 to be uniform.

Further, the exhaust passage is connected to an exhaust pump (not shown) to perform chamber exhaust pumping. Also, a shaft is passed through the exhaust passage. A sealing means such as a bellows (not shown) is provided around the lower end of the shaft to maintain a vacuum inside the chamber.

The susceptor 200 is a substrate support plate for supporting and heating the substrate. And a shaft 210 connected to a lower portion of the susceptor 200 and supporting the susceptor to move up and down. An RF electrode plate is embedded in the susceptor 200 in which the substrate is placed, which provides a potential for heating the susceptor 200 or forming plasma in the chamber 100. In addition, the susceptor 200 may include a heating element such as a heater. By heating the susceptor 200 using the heating element, as a result, the susceptor 200, which is seated on the susceptor 200 The substrate S can be heated to a predetermined temperature.

Meanwhile, the susceptor 200 is provided with a plurality of lift pins 201 passing through the susceptor 200. When the substrate enters the chamber through the substrate entrance 110, the lift pin located on the susceptor upper surface rests on the side contacting the susceptor and the substrate is seated. Conversely, when the susceptor rises for processing, the lift pin also rises And the substrate is spaced apart from the upper surface of the susceptor. When the susceptor is lowered after the process is completed and the substrate is taken out to the outside through the substrate entrance 110, the lift pin is lowered to place the substrate on the upper surface of the susceptor. The lower liner 420 is fixedly connected to the lower end of the lift pin so that the lower liner 420 is lifted together with the susceptor 200 when the susceptor 200 is lifted. This will be described later in the liner description.

The driving unit (not shown) is connected to a shaft 210 protruding out of the chamber 100 to provide up / down and rotational power to the shaft 210. On the outer wall of the shaft passing through the chamber 100, a baffle 120 may be provided around the shaft 210 to maintain the gas exhaust flow uniformly.

The showerhead 300 is positioned above the chamber and injects the substrate processing material into the substrate processing space, and sprays the substrate processing material supplied by the unshown raw material storage. The raw material reservoir and the showerhead are connected by separate supply pipes. The supply pipe may be provided with a control means, for example, an MFC, for controlling the amount of raw material to be supplied.

The shower head 300 has a structure in which the outer diameter of the lower sidewall is smaller than the outer diameter of the upper sidewall. The shower head 300 according to the embodiment of the present invention also functions as a chamber lead, and thus the outer diameter of the shower head 300 is large. The outer diameters of the upper sidewall and the lower sidewall of the shower head 300 have a stepped structure because the outer diameter of the lower portion of the showerhead 300 in contact with the process region in which the gas is injected is small.

The reason for stepping the upper and lower sidewalls of the showerhead 300 is to form a pumping region between the outer surface of the showerhead lower sidewall and the inner surface of the chamber sidewall, in addition to the process region formation. The gas exhausted through the pumping holes in the process region flows between the outer surface of the lower liner sidewall and the inner surface of the chamber sidewall after being vortexed to the pumping region and exhausted through the lower exhaust passage.

Meanwhile, since the shower head 300 according to the embodiment of the present invention has a stepped structure, the shower head can not be opened by a hinge action of one axis as in the conventional art. When the hinge is opened, the step structure of the lower part of the shower head does not open through the body part 411 and the protruding part 412 of the upper liner 410 which surrounds the periphery. Therefore, the embodiment of the present invention has a structure that vertically opens the shower head 300, which is a chamber lead, as shown in FIG. 2, rather than a hinge open structure. And a cylinder capable of vertical lifting movement for vertically opening is provided. 2 (a), the lift bar 610 of the cylinder 600 is fixedly connected to the upper surface of the shower head 300. When the chamber is to be opened, the lift of the cylinder 600 By moving the bar 610 upward, the showerhead 300 can be opened vertically to open the chamber as shown in Fig. 2 (b).

Meanwhile, in the exhaust mode according to the embodiment of the present invention, the gas in the process region moves to the pumping region through the pumping hole 413 formed in the protrusion 412 of the upper liner 410, Flows downward along the outer surface of the side wall 422 of the chamber 420 and the inner surface of the chamber side wall 100 and is exhausted to the outside of the chamber through the exhaust passage around the shaft 210.

To this end, a liner assembly according to an embodiment of the present invention is a tubular structure for forming a process region by projecting downwardly from a periphery of a showerhead, the outer surface of the projection being spaced apart from the chamber wall, A tubular body structure having an upper liner 410 having a plurality of pumping holes formed in the protrusions and a through passage of a shaft surrounding the lower surface and the side surface of the susceptor and supporting the susceptor on the bottom surface of the liner, And a lower liner 420 which moves up and down together with the movement of the susceptor.

The upper liner 410 and the lower liner 420 are preferably made of an insulator material and are preferably formed in the form of a ceramic liner. In addition, aluminum, magnesium, and tantalum ) Oxides and fluorides, and the like, or may be made of various materials. It will be appreciated that the materials of the other liners described below can also be implemented in various materials other than the ceramic liner. Particularly, in the case of the lower liner 420, it may be realized as an insulator such as peek, ellem, or vestel without being implemented with a heavy ceramic material, and may be implemented as a liner in the form of an oxidation film coated with a metal material .

The upper liner 410 has a tubular structure, and may have various types of tubular structures such as a columnar shape, a polygonal shape, and the like. The upper liner 410 of the tubular structure includes a body portion 411 surrounding the upper sidewall of the stepped shower head and a protruding portion 412 protruding downward to surround the lower sidewall of the step. The process area is formed by the inner surface of the projection 412, that is, the inner space of the tubular projection 412 is injected with the gas of the showerhead as a process area. After the susceptor 200 enters the process region, gas is injected into the process region to process the substrate on the susceptor 200. The pumping region is formed by the protrusion 412, and a pumping region is formed between the outer surface of the protrusion 412 and the inner surface of the side wall of the chamber 100.

In order to enlarge the pumping region, as shown in FIG. 3, the inner wall of the chamber facing the protruding portion may have a structure in which the inner wall is cut in a stepped manner. By having the structure in which the inner wall of the chamber facing the protruding portion 412 is cut in a stepwise manner, the space of the pumping region can be enlarged and the exhaust through the vortex can be more effectively performed due to the increase of the pumping region. As shown in FIG. 3, a separate liner 101 is provided on the stepped portion of the inner wall of the chamber facing the protrusion 412 to protect the chamber wall inner surface from gas present in the pumping region.

A plurality of pumping holes 413 are formed in the protrusion 412 of the upper liner 410. The pumping hole 413 is a hole through which gas is discharged from the process region to the pumping region. During the process, gas in the process region flows to the pumping region through the pumping hole 413. The pumping hole 413 may be formed horizontally or may be formed in a direction 413a in which the gas flows upward in the pumping region. By forming a pumping hole in the upward sloping direction, gas flowing in the pumping region is prevented from flowing into the inside of the fin plate. The pumping hole 413 may be formed in various shapes such as a circular shape or a polygonal shape, or an insertion means such as an orifice may be inserted into the pumping hole penetration structure. By inserting an orifice of diameter d (D> d) of the tube during the diameter D through-hole, the gas flow rate can be adjusted.

4A is a top view of the upper liner 410. It can be seen that the upper liner has a stepped structure between the upper and lower portions. FIG. 4 (b) shows a view of the upper liner from the bottom. It can be seen that a plurality of pumping holes are formed in the projections located in the lower portion of the upper liner.

The lower liner 420 performs a liner function to protect the sidewalls and the lower surface of the susceptor. To this end, the lower liner 420 includes a plate-shaped bottom surface 421 surrounding the lower surface of the susceptor, And has a cylindrical body structure having side walls 422. The inner side diameter of the lower liner 420 is larger than the outer side diameter of the upper liner 410. [ For reference, FIG. 5 shows the upper liner viewed from above.

The height of the lower liner 420 does not exceed the height of the bottom surface of the susceptor 200. The diameter of the lower liner 420 is such that the sidewall 422 is larger than the diameter of the protrusion 412 of the upper liner 410 when the end of the sidewall 422 of the cylindrical body reaches the pumping region as the susceptor rises And has a diameter such that the sidewall 422 is located at a position away from the inner surface of the chamber sidewall. The inner surface of the side wall 422 of the pin plate having the cylindrical body structure is brought into contact with the outer surface of the protruding portion 412 of the upper liner so that the gas in the pumping region is supplied to the lower liner 420 The gas in the pumping region flows between the inner surface of the sidewall of the chamber 100 and the outer surface of the sidewall 422 of the lower liner and the gas is introduced into the exhaust passage 111 of the lower portion of the susceptor 200, Can be exhausted.

The lower liner 420 moves up and down together with the susceptor 200. To this end, the lower liner 420 is fixedly connected to a lift pin 201 provided on the susceptor 200. [ As a result, the lower liner connected to the susceptor 201 is also lifted or lowered. The fixing of the lower liner 420 to the lift pins 201 can be fixed by various known methods such as welding, bolting, and the like.

Meanwhile, the lower liner 420 is not fixed to the lift pin but can be raised or lowered according to the rising or falling of the susceptor by a separate driving means (not shown). However, when the lower liner 420 is moved up and down through separate driving means without connecting the lift pins, it is necessary to perform driving control for raising or lowering the pin plate in synchronization with the rising or falling of the susceptor .

5, a shaft through passage 425 is formed on the bottom surface of the lower liner 420 of the cylindrical body structure. That is, a through hole 425 is formed in the bottom surface of the cylindrical body, and a shaft 210 supporting the susceptor passes through the through hole 425.

The lower liner also has a flange (flange) 423 in the form of a rim at the end of the side wall of the tubular body. The flange 423 is provided at the end of the side wall of the tubular body to prevent the end of the side wall of the tubular body from reacting sensitively to the gas flow.

In addition, the end surface of the side wall 422 of the lower liner 420 can be inclined. That is, by having a slope 423 such that the end face of the side wall of the lower liner is lower toward the chamber wall side as shown in Fig. 6, the gas in the pumping region flows downward along the outside of the side wall of the lower liner effective.

Further, the lower liner may have a separate weight center member 424 on the lower surface around the exhaust passage as shown in Fig. This is because in the case of the lower liner embodied as a tubular body, since the weight of the outer liner can be offset due to the presence of the side wall, by placing the weight centering member 424 around the inner exhaust passage, Lt; / RTI >

8, the side wall of the tubular body facing the substrate transfer path can be implemented with a double partition wall 422b structure. Fig. 8 (a) is a cross-sectional view of a double barrier rib structure, and Fig. 8 (b) is a perspective view of a double barrier rib structure. By making the side wall of the cylindrical body facing the substrate transfer passage 413 as the double partition wall 422b, the gas flows through the double partition walls in the side wall portion of the chamber having the substrate transfer passage, The transfer passage can be protected from gas exhaust.

In addition, the side wall of the tubular body as the lower liner can be inclined. This helps the exhaust flow of gas flowing along the outside of the side wall by forming the side wall at an angle. However, when the side wall is formed to be inclined, the outer chamber is also inclined so as to be aligned with the inclined cylindrical body side wall. On the other hand, the chamber 100, the shower head 300, and the upper liner 410 are sealed by a sealant means such as a sealant 521. [

As described above, embodiments of the present invention include a liner assembly of a top liner and a bottom liner within a plasma processing apparatus, so that process gas can be exhausted downward along the chamber side walls.

9A and 9B illustrate a state in which the substrate S is seated on the susceptor through the substrate transfer path. FIG. And FIG. 9 (b) is a view showing a state in which the susceptor rises to form a process region with the upper liner and is processed on the substrate. Referring to FIG. 9 (b), it can be seen that, when the process is performed, the gas in the process region flows into the pumping region through the pumping hole, then flows downward along the outer surface of the side wall of the lower liner again and finally through the exhaust passage . As a result, it can be seen that the process area can be minimized by protecting the lower surface of the susceptor with the lower liner. In addition, minimizing such a process region can improve the product yield by plasma stabilization.

Although the present invention has been described with reference to the accompanying drawings and the preferred embodiments described above, the present invention is not limited thereto but is limited by the following claims. Accordingly, those skilled in the art will appreciate that various modifications and changes may be made thereto without departing from the spirit of the following claims.

100: chamber 200: susceptor
210: shaft 300: shower head
410: upper liner 411:
412: protrusion 413: pumping hole
420: lower liner 421: bottom surface
422: side wall

Claims (20)

CLAIMS 1. A liner assembly mounted within a substrate processing chamber,
A tubular structure for forming a process region by projecting downwardly from a periphery of a showerhead, the outer surface of the projection being spaced apart from the chamber wall to form a pumping region, wherein a plurality of pumping holes are formed in the projection Liner;
A tubular body structure having a through-hole on a bottom surface, comprising: a lower liner that moves up and down together with the movement of the susceptor;
Lt; / RTI >
Wherein the lower liner is configured such that when the end of the side wall of the tubular body reaches the pumping region along with the rising of the susceptor the side wall is adjacent to the outer surface of the upper liner and at the same time, The liner assembly having a diameter such that the liner assembly is spaced apart from the liner assembly. delete [2] The apparatus of claim 1,
A body portion having a side wall of the shower head having a stepped structure and surrounding the upper sidewall of the step;
A plurality of pumping holes formed to surround the lower sidewall of the step and protruding downward to form the process region by the inner surface, and a protrusion, which forms the pumping region between the outer surface and the chamber wall,
≪ / RTI > 4. The liner assembly of claim 3, wherein the direction of the pumping hole from the process region to the pumping region is formed to be upward sloped. 5. The liner assembly of claim 4, wherein the pumping holes are circular, polygonal, orifice structures. The liner assembly of claim 1, wherein the bottom liner is fixedly connected to a bottom surface of the tubular body and a lower end of a lift pin of the susceptor so that the tubular body moves upward and downward along with the upward and downward movement of the susceptor. The liner assembly of claim 1, wherein the lower liner is moved up and down by a separate drive means. The liner assembly of claim 1, wherein the lower liner has a double-walled structure with side walls of the tubular body facing the substrate transfer path. delete The liner assembly of claim 1, wherein an end surface of the sidewall of the lower liner is inclined. The liner assembly of claim 1, further comprising a separate center of gravity on the lower surface of the lower liner. A showerhead for spraying the substrate processing material at the time of the process;
A chamber having an exhaust passage and subjected to substrate processing;
A susceptor for supporting a substrate;
A tubular structure for forming a process region by projecting downwardly from a periphery of a showerhead, the outer surface of the projection being spaced apart from the chamber wall to form a pumping region, wherein a plurality of pumping holes are formed in the projection Liner;
A lower liner surrounding at least a portion of the outer and lower surfaces of the susceptor and moving up and down together with the susceptor;
Lt; / RTI >
Wherein the sidewall of the lower liner is adjacent to the outer surface of the upper liner and spaced apart from the inner surface of the sidewall of the chamber when the end of the lower liner reaches the pumping area as the susceptor rises / RTI > 14. The substrate processing apparatus according to claim 12, wherein the shower head has a step structure such that an outer diameter of the lower side wall is smaller than an outer diameter of the upper side wall. 14. The method of claim 13,
A body portion surrounding the upper sidewall of the step;
A protrusion that surrounds the lower sidewall of the step and protrudes downward to form a plurality of pumping holes, forming the process area by an inner surface, and forming the pumping area between the outer surface and the chamber wall;
And the substrate processing apparatus. 15. The substrate processing apparatus according to claim 14, wherein the showerhead has a structure vertically opened by vertically driving the cylinder. 13. The apparatus of claim 12, wherein the chamber interior surface in contact with the pumping region is protected by a liner. 13. The substrate processing apparatus of claim 12, wherein an inner side diameter of the lower liner is larger than an outer side diameter of the upper liner. The substrate processing apparatus according to claim 12, comprising a shaft coupled to one surface of the susceptor to move the susceptor up and down. The substrate processing apparatus according to claim 12, wherein the exhaust passage is provided with a baffle. The substrate processing apparatus according to claim 12, wherein the inner wall of the chamber facing the projection has a structure in which it is tucked.

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