KR101650375B1 - Light Emitting Diode Repair Method and Apparatus using Quantum Dot Coating - Google Patents
Light Emitting Diode Repair Method and Apparatus using Quantum Dot Coating Download PDFInfo
- Publication number
- KR101650375B1 KR101650375B1 KR1020090110847A KR20090110847A KR101650375B1 KR 101650375 B1 KR101650375 B1 KR 101650375B1 KR 1020090110847 A KR1020090110847 A KR 1020090110847A KR 20090110847 A KR20090110847 A KR 20090110847A KR 101650375 B1 KR101650375 B1 KR 101650375B1
- Authority
- KR
- South Korea
- Prior art keywords
- light emitting
- quantum dot
- emitting diode
- light emission
- light
- Prior art date
Links
- 239000002096 quantum dot Substances 0.000 title claims abstract description 203
- 238000000034 method Methods 0.000 title claims abstract description 23
- 239000011248 coating agent Substances 0.000 title description 3
- 238000000576 coating method Methods 0.000 title description 3
- 239000011259 mixed solution Substances 0.000 claims abstract description 33
- 230000002950 deficient Effects 0.000 claims abstract description 17
- 239000010410 layer Substances 0.000 claims description 91
- 230000001681 protective effect Effects 0.000 claims description 33
- 238000001035 drying Methods 0.000 claims description 14
- 239000012780 transparent material Substances 0.000 claims description 10
- 239000011241 protective layer Substances 0.000 claims description 7
- 238000005259 measurement Methods 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 description 13
- 150000004767 nitrides Chemical class 0.000 description 12
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 229910004613 CdTe Inorganic materials 0.000 description 2
- 229910004262 HgTe Inorganic materials 0.000 description 2
- 229910007709 ZnTe Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 2
- 239000004054 semiconductor nanocrystal Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000003086 colorant Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
In the present invention, the light emitting diodes of the manufactured light emitting diodes are measured, and the light emitting diodes classified according to the grades of the light emitting characteristics are coated with the quantum dot mixed solution to form quantum dot layers, thereby repairing the light emitting diodes And to a repair method and apparatus of a light emitting diode capable of improving the yield. The method of repairing a light emitting diode according to the present invention includes the steps of: determining a light emission grade for the measured light emission characteristic value by measuring a light emission property value of the light emitting diode; determining a repair quantum dot corresponding to the light emission grade; And a third step of forming a quantum dot layer corresponding to the quantum dot on the uppermost layer of the light emitting diode.
LED, good product, defective product, quantum dot, repair, color coordinate
Description
The present invention relates to a method and an apparatus for repairing light emitting diodes, and more particularly, to a method and apparatus for repairing light emitting diodes by measuring light emitting characteristics of manufactured light emitting diodes (LEDs) To a method and an apparatus for repairing a light emitting diode capable of repairing a light emitting diode as a good product having improved light emission hue and luminance by forming a quantum dot layer and improving a production yield.
LEDs are fabricated on the basis of III-V nitride semiconductors such as GaN. The LED is basically manufactured by bonding a P-type nitride semiconductor layer and an N-type nitride semiconductor layer in which a P-type or N-type impurity is added to the nitride semiconductor as described above, and a P-type nitride semiconductor layer and an N-type nitride semiconductor An active layer is interposed between the layers to increase the recombination ratio of the electron-holes, thereby improving the luminance characteristics of the LED.
1, a typical LED is fabricated such that each of the P-type nitride semiconductor layer and the N-type nitride semiconductor layer is connected to an external electrode, and LEDs to which power is applied to both electrodes can emit light of a visible light wavelength .
In addition, in recent years, in order to improve the luminance characteristic or to change the luminescent color, an attempt to appropriately insert the quantum dot layer into an appropriate position of the basic LED structure composed of the P type nitride semiconductor layer, the active layer and the N type nitride semiconductor layer .
Further, as shown in FIG. 2, the LED having the fluorescent layer coated on the multilayer structure as described above can be manufactured, and the LED having such a structure can improve the luminance characteristic. The LED having the quantum dot layer coated thereon can be fabricated on the multi-layer structure as described above. The LED having such a structure can change the emission color and improve the luminance characteristic. For example, in the structure of FIG. 3, an LED having a structure that emits blue light before applying the quantum dot layer may be an LED that emits white light by applying a quantum dot layer for emitting light of a yellow wavelength band.
As described above, the LED can be manufactured with a structure in which the quantum dot layer is appropriately inserted at a proper position of the basic LED structure in addition to the basic structure composed of the P-type nitride semiconductor layer, the active layer, and the N-type nitride semiconductor layer. A high-luminance LED of various luminescent colors may be produced by applying a fluorescent layer, a quantum dot layer, or the like to the outside of the uppermost layer.
However, when manufacturing LEDs having various structures, it is necessary to apply power to the LEDs in the good-quality test step after all the manufacturing steps and to measure the light emission intensity of the LEDs using the photodetector. do. In order to produce an LED having a high luminous efficiency at a low cost, it is necessary to improve the color and brightness characteristics of the LED determined to be defective and to use the LED so that defective products can be reduced.
SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and it is an object of the present invention to provide a light emitting diode having a light emitting diode, Which can improve the production yield by repairing a light emitting diode as a good product having improved light emission hue and brightness, and a method and an apparatus for repairing a light emitting diode.
The method of repairing a light emitting diode according to an embodiment of the present invention includes a first step of determining a light emitting level of the measured light emitting property by measuring a light emitting property of the light emitting diode, A second step of determining a repair quantum dot corresponding to the emission level; And a third step of forming a quantum dot layer corresponding to the repair quantum dot on the uppermost layer of the light emitting diode.
Wherein if the emission level is higher than the reference emission level, the light emitting diode is classified as a good product, and if the emission level is lower than the reference emission level, the light emitting diode is classified as a defective product, Lt; RTI ID = 0.0 > quantum dot.
After the third step, the step of re-measuring the light emitting property of the light emitting diode having the quantum dot layer and determining whether the light emitting property of the re-measured light emitting property is not less than the reference light emitting grade.
The third step may include: coating a quantum dot mixed solution corresponding to the repair quantum dot on the uppermost layer of the light emitting diode; And drying the applied quantum dot mixed solution.
Forming a protective layer of a transparent material on the quantum dot layer after the third step.
According to another aspect of the present invention, there is provided a repair apparatus for a light emitting diode, comprising: a first photodetector for measuring a light emission characteristic value of a light emitting diode; A quantum dot selector for determining a light emission grade for the measured light emission property value and determining a repair quantum dot corresponding to the light emission grade; A quantum dot dispenser for applying the quantum dot mixed solution corresponding to the repair quantum dot on the uppermost layer of the light emitting diode; And a first dryer for drying the applied quantum dot mixed solution, wherein the application of the quantum dot mixed solution using the quantum dot dispenser and the drying of the quantum dot mixed solution using the first dryer allow the quantum dot Layer.
The repair device of the light emitting diode may further include: a second photodetector for measuring a light emission characteristic value of the light emitting diode on which the quantum dot layer is formed; And a goodness-of-goodness determiner for determining whether the emission level of the emission characteristic measured by the second photodetector is higher than a reference emission level.
The quantum dot dispenser has a plurality of nozzles corresponding to a plurality of repair quantum dots and applies the quantum dot mixed solution through nozzles corresponding to the repair quantum dots.
The repair apparatus of the light emitting diode may further include: a protective film applicator for applying a protective film of a transparent material on the quantum dot layer; And a second dryer for drying the applied protective film.
Wherein the quantum dot selector comprises: a light emission grade determination unit for determining the light emission grade with respect to light emission characteristic values from the first photodetector or the second photodetector; And a quantum dot determination unit for determining a repair quantum dot corresponding to the emission level by referring to information of a database storing information on the kind of quantum dots according to the emission level.
The quantum dot selector may further include a good product transferring unit for transferring the corresponding light emitting diode having a light emitting grade determined by the light emitting grade determining unit to a standard collector.
Wherein the repair device of the light emitting diode has a plurality of light emitting diodes inserted into each jig, and after the measurement of the light emission characteristic value of the first light detector, the plurality of light emitting diodes are sequentially supplied one by one below the first light detector And a feeder.
According to another aspect of the present invention, there is provided a repair method for a light emitting diode, comprising: measuring a light emission characteristic value of a plurality of light emitting diodes to determine a light emission grade for the measured light emission characteristic value; A first step of classifying a plurality of cells; A second step of collecting the collected plurality of light emitting diodes by respectively transferring the classified light emitting diodes according to the light emitting grades in different paths and determining the repair quantum dots corresponding to the respective light emitting grades; And a third step of forming different quantum dot layers corresponding to the repair quantum dots determined by the light emission grade on the uppermost layer of each of the collected plurality of light emitting diodes.
Wherein if the emission level is higher than the reference emission level, the light emitting diode is classified as a good product, and if the emission level is lower than the reference emission level, the light emitting diode is classified as a defective product, Lt; RTI ID = 0.0 > quantum dot.
Measuring a light emission characteristic value of the plurality of light emitting diodes having the quantum dot layer formed thereon after the third step and determining whether the light emitting property of the re-measured light emitting property value is greater than or equal to the reference light emitting property .
Forming a protective layer of a transparent material on the quantum dot layer after the third step.
According to another aspect of the present invention, there is provided a repair apparatus for a light emitting diode, comprising: a light emitting diode having a plurality of light emitting diodes, Classifiers to classify; Transport means for transporting the sorted plurality of light emitting diodes according to different emission grades by different routes; A plurality of collectors collecting the light emitting diodes transferred to the different paths into the jigs according to the light emitting grades; And a plurality of repairers for repairing and forming a quantum dot layer corresponding to each of the plurality of collectors on the uppermost layer of the plurality of light emitting diodes collected in each of the plurality of collectors.
Wherein each of the plurality of repair units comprises: a feeder for sequentially supplying the plurality of light emitting diodes collected in the jig one by one; A quantum dot dispenser for applying the quantum dot mixed solution onto the uppermost layer of the light emitting diode supplied from the feeder; And a first dryer for drying the applied quantum dot mixed solution, wherein the application of the quantum dot mixed solution using the quantum dot dispenser and the drying of the quantum dot mixed solution using the first dryer allow the quantum dot Layer.
Wherein each of the plurality of repair units comprises: a photodetector for measuring a light emission characteristic value of the light emitting diode on which the quantum dot layer is formed; And a goodness-of-goodness determiner for determining whether the emission level of the emission characteristic measured by the photodetector is higher than a reference emission level.
Each of the plurality of repair units includes a protective film applicator for applying a protective film of a transparent material on the quantum dot layer; And a second dryer for drying the applied protective film.
The classifier transmits the corresponding light emitting diode having the luminosity grade of the measured luminosity characteristic value to the luminosity grade or more to the good article collector.
According to the method and apparatus for repairing a light emitting diode according to the present invention, a light emitting diode, which is required to be improved in light emission characteristics, is coated with a quantum dot mixed solution to form a quantum dot layer, The yield can be improved.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Reference will now be made in detail to the preferred embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the like elements throughout. Like reference symbols in the drawings denote like elements.
4 is a view for explaining a
4, a
In the present invention, power is applied in the goodness test step of the manufactured LED, the light emission characteristic value of light emitted from the LED is measured using the
Hereinafter, the operation of the
The
The
The
FIG. 7 is a block diagram of a
7, the
The light emission class determiner 410 determines the light emission class corresponding to a light emission characteristic value from the
The quantum dot type database 421 stores and holds information on the types of quantum dots required for each emission level as shown in FIG.
The quantum dot determination unit 420 can determine the repair quantum dots corresponding to the emission level determined by the emission
The good
5, the
The quantum dots may be compound semiconductor nanocrystals such as CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, and HgTe and may be mixed with a quantum dot mixed with a dispersion solvent (for example, toluene, The solution may be contained in a container connected to each nozzle provided in the
Thereafter, when the LED coated with the quantum dot layer by the
Next, when the LED is transferred to the lower portion of the
When the LED coated with the protective film by the
After the quantum dot layer and the protective film are formed on the defective LEDs as described above, the
The
For example, as shown in FIG. 10, a light emission characteristic value corresponding to a target range A in a constant color (for example, white) in a CIE (Commission International de I'Edairage) When the emission level is determined to be equal to or higher than the reference emission level (for example,
8 is a view for explaining a
8, a
Hereinafter, the operation of the
In step S61, the
Each of the LEDs classified as above may be transferred to different collectors by a transferring means such as a conveyor system according to the luminous grades and collected in a plurality of collectors 220 (S62). In some cases, the
The plurality of
The LEDs collected in the plurality of
Accordingly, the plurality of
For example, the
Thereafter, when the LED coated with the quantum dot layer by the conveying system such as the conveyor system is transported to the lower portion of the
Next, when the LED is transferred to the lower portion of the
When the LED coated with the protective film by the transfer means is transferred to the lower portion of the
After the quantum dot layer and the protective layer are formed on the defective LED, the
The
For example, as shown in FIG. 10, in the Commission international de I'Edairage (CIE) color coordinate system representing a general display color coordinate system, a light emission characteristic value corresponding to a range A indicating a luminance over a certain color In the case where the grade is a reference emission level (for example,
While the invention has been shown and described with reference to certain preferred embodiments thereof, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. This is possible. Therefore, the scope of the present invention should not be limited to the described embodiments, but should be determined by the equivalents of the claims, as well as the claims.
1 is an example of a structure of a general light emitting diode.
2 is another example of the structure of a general light emitting diode.
3 is another example of the structure of a general light emitting diode.
4 is a view for explaining a repair apparatus for a light emitting diode according to an embodiment of the present invention.
5 is a flowchart illustrating an operation of a repair apparatus for a light emitting diode according to an embodiment of the present invention.
FIG. 6 is a view for explaining a database of necessary quantum dot information according to the emission level of a light emitting diode according to an embodiment of the present invention.
7 is a block diagram of a quantum dot selector according to an embodiment of the present invention.
8 is a view for explaining a repair apparatus for a light emitting diode according to another embodiment of the present invention.
9 is a flowchart illustrating an operation of a repair apparatus for a light emitting diode according to another embodiment of the present invention.
10 is a diagram for explaining a general CIE color coordinate system.
Claims (21)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090110847A KR101650375B1 (en) | 2009-11-17 | 2009-11-17 | Light Emitting Diode Repair Method and Apparatus using Quantum Dot Coating |
TW99132453A TW201123527A (en) | 2009-11-17 | 2010-09-24 | Method and apparatus for repairing light emitting diode using quantum dot coating |
JP2012538746A JP2013511146A (en) | 2009-11-17 | 2010-09-27 | Light emitting diode repair method and apparatus using quantum dot coating |
CN201080052153.0A CN102668142B (en) | 2009-11-17 | 2010-09-27 | The method and apparatus of light-emitting diode is repaired for using quantum spot printing to cover |
PCT/KR2010/006526 WO2011062362A2 (en) | 2009-11-17 | 2010-09-27 | Method and apparatus for repairing a light-emitting diode using a quantum-dot coating |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090110847A KR101650375B1 (en) | 2009-11-17 | 2009-11-17 | Light Emitting Diode Repair Method and Apparatus using Quantum Dot Coating |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20110054262A KR20110054262A (en) | 2011-05-25 |
KR101650375B1 true KR101650375B1 (en) | 2016-08-24 |
Family
ID=44060148
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020090110847A KR101650375B1 (en) | 2009-11-17 | 2009-11-17 | Light Emitting Diode Repair Method and Apparatus using Quantum Dot Coating |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP2013511146A (en) |
KR (1) | KR101650375B1 (en) |
CN (1) | CN102668142B (en) |
TW (1) | TW201123527A (en) |
WO (1) | WO2011062362A2 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101296205B1 (en) * | 2012-07-20 | 2013-08-13 | 주식회사 네패스엘이디 | Method for fabricating light emitting device package |
KR102260326B1 (en) * | 2019-11-07 | 2021-06-03 | 세메스 주식회사 | Apparatus and method for curing quantum dot, and apparatus and method for printing quantum dot |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2008112811A (en) * | 2006-10-30 | 2008-05-15 | Kyocera Corp | Method for manufacturing light emitting device |
JP2009260244A (en) * | 2008-03-25 | 2009-11-05 | Toshiba Corp | Light-emitting device and method of manufacturing the same, and apparatus for manufacturing light-emitting device |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
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US7858403B2 (en) * | 2001-10-31 | 2010-12-28 | Cree, Inc. | Methods and systems for fabricating broad spectrum light emitting devices |
US7462502B2 (en) * | 2004-11-12 | 2008-12-09 | Philips Lumileds Lighting Company, Llc | Color control by alteration of wavelength converting element |
US7344952B2 (en) * | 2005-10-28 | 2008-03-18 | Philips Lumileds Lighting Company, Llc | Laminating encapsulant film containing phosphor over LEDs |
KR100772567B1 (en) * | 2006-06-08 | 2007-11-02 | 경북대학교 산학협력단 | Led grouping and arranging method for uniform white and luminance distribution of led backlight unit |
KR100819337B1 (en) * | 2006-06-14 | 2008-04-02 | 재단법인서울대학교산학협력재단 | White LED structure using quantum dots and the manufacturing method thereof |
JP2008147563A (en) * | 2006-12-13 | 2008-06-26 | Sharp Corp | Manufacturing method of uniform backlight using led having variation |
KR100991904B1 (en) * | 2007-12-14 | 2010-11-04 | 삼성전자주식회사 | White LED element using quantum dots and the producing method thereof |
WO2009118985A2 (en) * | 2008-03-25 | 2009-10-01 | Kabushiki Kaisha Toshiba | Light emitting device, and method and apparatus for manufacturing same |
-
2009
- 2009-11-17 KR KR1020090110847A patent/KR101650375B1/en active IP Right Grant
-
2010
- 2010-09-24 TW TW99132453A patent/TW201123527A/en unknown
- 2010-09-27 CN CN201080052153.0A patent/CN102668142B/en not_active Expired - Fee Related
- 2010-09-27 JP JP2012538746A patent/JP2013511146A/en active Pending
- 2010-09-27 WO PCT/KR2010/006526 patent/WO2011062362A2/en active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008112811A (en) * | 2006-10-30 | 2008-05-15 | Kyocera Corp | Method for manufacturing light emitting device |
JP2009260244A (en) * | 2008-03-25 | 2009-11-05 | Toshiba Corp | Light-emitting device and method of manufacturing the same, and apparatus for manufacturing light-emitting device |
Also Published As
Publication number | Publication date |
---|---|
WO2011062362A3 (en) | 2011-07-14 |
JP2013511146A (en) | 2013-03-28 |
KR20110054262A (en) | 2011-05-25 |
CN102668142B (en) | 2015-08-26 |
WO2011062362A2 (en) | 2011-05-26 |
TW201123527A (en) | 2011-07-01 |
CN102668142A (en) | 2012-09-12 |
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