KR101506291B1 - Semiconductor light emitting device, manufacturing method of the same and backlight unit comprising the same - Google Patents

Abstract

The present disclosure relates to a semiconductor light emitting device comprising: a metal substrate including a first conductive portion and a second conductive portion and formed in a hexahedron shape having an upper surface, a lower surface, a front surface, a rear surface, a left surface, and a right surface; A semiconductor light emitting device chip having a first electrode bonded to the upper surface of the first conductive portion and a second electrode bonded to the upper surface of the second conductive portion; A reflective portion formed on the upper surface of the metal substrate so as to surround the periphery of the semiconductor light emitting device chip; And an encapsulating portion formed to cover the upper surface of the reflecting portion and the upper surface of the semiconductor light emitting device chip, wherein the encapsulating portion emits light from the semiconductor light emitting device chip through the encapsulating portion, (Front, rear, left, and right sides) of the metal substrate are cut surfaces, the metal substrate extending in a direction opposite to the semiconductor light emitting device chip with respect to the upper surface of the metal substrate.

Description

Technical Field [0001] The present invention relates to a semiconductor light emitting device, a method of manufacturing a semiconductor light emitting device, and a backlight unit including a semiconductor light emitting device. BACKGROUND ART [0002]

The present invention relates to a semiconductor light emitting device, a method of manufacturing a semiconductor light emitting device, and a backlight unit including the semiconductor light emitting device. More particularly, the present invention relates to a semiconductor light emitting device and a method of manufacturing a semiconductor light emitting device applicable to a side view type backlight unit, View type backlight unit.

Herein, the background art relating to the present disclosure is provided, and these are not necessarily meant to be known arts.

The liquid crystal display device has various advantages such as small size, light weight and low power consumption, and is used for various purposes such as a liquid crystal display for a mobile communication terminal, a monitor for a notebook PC, a monitor for a desktop PC, and a large flat TV.

1 is a schematic view of a conventional liquid crystal display device having a top view type backlight unit. 2 is a schematic view of a conventional liquid crystal display device having a side view type backlight unit.

A liquid crystal display device includes a liquid crystal panel (10) and a backlight unit (30). Since the liquid crystal panel 10 included in the liquid crystal display device is mostly composed of a light-receiving device that displays an image by adjusting the amount of light coming from the outside, the liquid crystal display device has a structure in which a liquid crystal panel 10 A backlight unit 30 is required.

The backlight unit 30 provides light to the liquid crystal panel 10, and the provided light is transmitted through the liquid crystal panel 10. At this time, the liquid crystal panel 10 adjusts the transmittance of light to realize an image. The backlight unit 30 includes a light source assembly 35 and can be divided into a top view mode and a side view mode depending on the arrangement of the light source assembly 40. [

1, a light source assembly 35 including a circuit board 31 and a plurality of light sources 33 is disposed on the back surface of the liquid crystal panel 10, and a plurality of light sources 33 Is supplied to the front liquid crystal panel 10 directly through the diffusion plate 25. [ 2, in the case of the side view type, the light source assembly 35 including the circuit board 31 and the plurality of light sources 33 is disposed on the side of the light guide plate 45 for guiding light, The light guide plate 45 disposed on the back surface of the light guide plate 10 provides light in a manner that guides the light that has entered the side surface of the light guide plate 45 toward the liquid crystal panel 10 forward. The side view method has many advantages such as uniformity of light, long life span, and advantageous construction of a thin liquid crystal display device as compared with the top view method.

As the light source used in the light source assembly, electro luminescence (EL), cold cathode fluorescent lamp (CCFL), hot cathode fluorescent lamp (HCFL), and semiconductor light emitting element can be used. Among them, the semiconductor light emitting device has advantages such as low power consumption and excellent luminous efficiency, and its use is gradually increasing as it is suitable for the trend of miniaturization and slimming of information communication equipment.

Particularly, in the case of a mobile communication terminal such as a mobile phone, a slimmer liquid crystal display device is required, and therefore, a side view type light source assembly using a semiconductor light emitting element, which is advantageous for slimming down a liquid crystal display, .

A liquid crystal display device that is considerably slimmer is realized by using a semiconductor light emitting device as a light source and a light source assembly by a side view method, but there is still a demand for a slimmer liquid crystal display device. In order to meet such a demand, a light source assembly having a thickness of 1 mm or less, more preferably 0.5 mm or less is required.

The light source assembly 35 includes a circuit board 31 and a light guide plate 45 which are disposed so as to face the side surface 41 of the light guide plate 45, And a light source 33 fixed to the circuit board 31 to emit light toward the side surface of the circuit board 31. The light source 33 is formed in the form of a semiconductor light emitting device package and includes a housing 37 having a cavity 36 for receiving the semiconductor light emitting device chip 34 and the semiconductor light emitting device chip 34. In this structure, it is considered that the width of the circuit board 31 should be smaller than the required thickness of the light source assembly 35, and that the dimension of either the width or the length of the semiconductor light emitting device chip 34 is at least about 0.2 mm It is not easy to realize the light source assembly 35 having such a structure with a thickness of about 1 mm.

4 is a view showing another example of a conventional side view type backlight unit. The light source assembly 35 includes a circuit board 31 which is laid down so as to be perpendicular to the side surface 41 of the light guide plate 45, And a reflector 38 for reflecting the light emitted from the light source 33 so as to be incident on the side surface 41 of the light guide plate 45. [ The light source 33 is provided in the form of a semiconductor light emitting device chip. In this structure, by limiting the width of the circuit board 31 by disposing the circuit board 31 on its side, the thickness of the semiconductor light-emitting device chip used as the light source is smaller than the width and the longitudinal dimension, So that the assembly 35 is made thin. The light emitted from the semiconductor light emitting device chip is incident on the side surface 41 of the light guide plate 45 as the exit surface of the light source 33 in the form of the semiconductor light emitting device chip is placed perpendicular to the side surface 41 of the light guide plate 45, A reflector 38 is required for guiding the light emitted from the light source to the light source. Such a reflector 38 is a factor for increasing the thickness of the light source assembly 35, and therefore, there is a limit to the construction of the light source assembly 35 having such a structure.

This will be described later in the Specification for Implementation of the Invention.

SUMMARY OF THE INVENTION Herein, a general summary of the present disclosure is provided, which should not be construed as limiting the scope of the present disclosure. of its features).

According to one aspect of the present disclosure, there is provided a semiconductor light emitting device including a first conductive portion disposed to face a side surface with a gap therebetween and electrically separated by a gap, And a second conductive portion, the metal substrate being formed in a hexahedron shape having an upper surface, a lower surface, a front surface, a rear surface, a left surface, and a right surface; A first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, an active layer interposed between the first and second semiconductor layers and generating light by recombination of electrons and holes, A first electrode electrically connected to the first semiconductor layer, and a second electrode electrically connected to the second semiconductor layer, wherein the first electrode is bonded to the upper surface of the first conductive portion, A semiconductor light emitting element chip fixed on the upper surface of the metal substrate so as to be connected to the upper surface of the conductive portion; A reflective portion formed on the upper surface of the metal substrate so as to surround the periphery of the semiconductor light emitting device chip; And an encapsulating portion formed to cover the upper surface of the reflecting portion and the upper surface of the semiconductor light emitting device chip, wherein the encapsulating portion emits light from the semiconductor light emitting device chip through the encapsulating portion, And the peripheral surfaces (the front surface, the rear surface, the left surface, and the right surface) of the metal substrate are the cut surfaces, extending in the direction opposite to the semiconductor light emitting device chip with respect to the upper surface of the metal substrate.

According to another aspect of the present disclosure, there is provided a method of manufacturing a semiconductor light emitting device, including the steps of: forming a first conductive portion and a second conductive portion, and forming a first conductive portion and a second conductive portion between the first conductive portion and the second conductive portion, 2 preparing a plate comprising a groove separating a conductive part; A first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, an active layer interposed between the first and second semiconductor layers and generating light by recombination of electrons and holes, A first electrode electrically connected to the first semiconductor layer, and a second electrode electrically connected to the second semiconductor layer, on a top surface of the plate; Covering the semiconductor light emitting device chip with a reflective material; Partially removing the reflective agent in accordance with the height of the upper surface of the semiconductor light emitting device chip so that the upper surface of the semiconductor light emitting device chip is exposed after curing the reflective agent; Covering the upper surface of the reflective agent and the upper surface of the semiconductor light emitting device chip with an encapsulating agent; Partially removing the lower portion of the plate so that the groove is exposed to the lower side of the plate; And cutting the plate and the sealing agent together along a predetermined boundary of the semiconductor light emitting device.

According to another aspect of the present disclosure, there is provided a backlight unit comprising: a light guide plate guiding light incident on one side surface to be emitted to an upper surface; A circuit board laid on one side of the light guide plate; And a first conductive portion and a second conductive portion which are disposed to face each other with a gap therebetween and are electrically separated from each other by a gap and have a hexahedron shape having an upper surface, a lower surface, a front surface, a rear surface, a left surface, and a right surface A first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, a second semiconductor layer interposed between the first semiconductor layer and the second semiconductor layer, A first electrode electrically connected to the first semiconductor layer; and a second electrode electrically connected to the second semiconductor layer, wherein the first electrode is bonded to the upper surface of the first conductive portion, A semiconductor light emitting device chip fixed on the upper surface of the metal substrate so that the second electrode is bonded to the upper surface of the second conductive portion, a reflecting portion formed so as to surround the semiconductor light emitting device chip on the upper surface of the metal substrate, And a sealing portion formed to cover the upper surface and the upper surface of the semiconductor light emitting device chip, wherein light from the semiconductor light emitting device chip is emitted through the sealing portion, and the first conductive portion and the second conductive portion are arranged in a direction (Front, rear, left, and right sides) of the metal substrate are cut surfaces, and the front or rear surface of the metal substrate is laid down so as to face the upper surface of the circuit substrate, And a semiconductor light emitting element which is fixed to an upper surface of the circuit board so as to face the circuit board and electrically connected to the circuit board through a front surface or a rear surface of each of the first conductive portion and the second conductive portion facing the upper surface of the circuit board. A backlight unit is provided.

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This will be described later in the Specification for Implementation of the Invention.

1 is a schematic view of a conventional liquid crystal display device having a top view type backlight unit,
2 is a schematic view of a conventional liquid crystal display device having a side view type backlight unit,
3 is a diagram illustrating an example of a backlight unit of a conventional side view system,
4 is a view showing another example of a backlight unit of a conventional side view system,
5 is a view showing an example of a semiconductor light emitting device according to the present disclosure,
FIG. 6 is a cross-sectional view of the semiconductor light emitting device of FIG. 5,
7 is a view showing another example of the semiconductor light emitting device according to the present disclosure,
8 is a view showing still another example of the semiconductor light emitting device according to the present disclosure,
9 to 15 are views showing an example of a method for manufacturing a semiconductor light emitting device according to the present disclosure,
16 is a view showing an example of a backlight unit including the semiconductor light emitting device according to the present disclosure,
17 is a plan view showing a main part of the backlight unit of Fig. 16, Fig.
18 is a cross-sectional view taken along the line AA in Fig.

The present disclosure will now be described in detail with reference to the accompanying drawings.

FIG. 5 is a view showing an example of a semiconductor light emitting device according to the present disclosure, and FIG. 6 is a sectional view showing the semiconductor light emitting device of FIG.

The semiconductor light emitting device 150 includes a metal substrate 155, a semiconductor light emitting device chip 165, a reflecting portion 170 and an encapsulating portion 175.

The metal substrate 155 has a first conductive portion 151 and a second conductive portion 152 which face the side face with the gap 153 and the gap 153 interposed therebetween. In the metal substrate 155, the first conductive portion 151 and the second conductive portion 152 are electrically insulated by the gap 153. The metal substrate 155 is formed in a hexahedron shape having an upper surface 154, a lower surface 156, a front surface 157, a rear surface 158, a left surface 159 and a right surface 161. The metal substrate 155 may have a dimension (or distance) z between the top surface 154 and the bottom surface 156 that is less than the dimension (or distance) y between the front surface 157 and the back surface 158, Is larger.

The semiconductor light emitting device chip 165 includes a first semiconductor layer having a first conductivity (e.g., n-type), a second semiconductor layer having a second conductivity (e.g., p-type) different from the first conductivity, An active layer interposed between the second semiconductor layers and generating light by recombination of electrons and holes, a first electrode 171 electrically connected to the first semiconductor layer, and a second electrode electrically connected to the second semiconductor layer (Not shown). The semiconductor light emitting device chip 165 is provided in the form of a flip chip. The semiconductor light emitting device chip 165 is disposed such that the first electrode 171 and the second electrode 172 are positioned at the lower side and face the upper surface 154 of the metal substrate 155. The first electrode 171 is bonded to the first conductive portion 151 and the second electrode 172 is bonded to the second conductive portion 152 on the upper surface 154 of the metal substrate 155.

The semiconductor light emitting device chip 165 is formed in an elongated shape having a long side a and a short side b. The semiconductor light emitting device chip 165 is placed on the upper surface 154 of the metal substrate 155 such that the long side a extends in the left and right direction x of the metal substrate 155. The dimension y between the front surface 157 and the rear surface 158 of the metal substrate 155 may be formed thin enough to be close to the short side length b of the semiconductor light emitting device chip 165. That is, the semiconductor light emitting device 150 having the front surface and the rear surface dimension y thin enough to be close to the short side length b of the semiconductor light emitting device chip 165 may be provided.

The reflective portion 170 may include a white resin having a high reflection efficiency. The reflective portion 170 is formed on the upper surface 154 of the metal substrate 155 so as to surround the semiconductor light emitting device chip 165. The reflective portion 170 reflects light emitted from the side surface of the semiconductor light emitting device chip 165 so that light generated in the active layer is emitted only through the upper surface of the semiconductor light emitting device chip 165. Therefore, the light emitted from the semiconductor light emitting device chip 165 has a directivity directed to the upper surface side. 6 shows an example in which the upper surface of the reflective portion 170 and the upper surface of the semiconductor light emitting device chip 165 have the same height, but the upper surface of the reflective portion 170 is higher than the upper surface of the semiconductor light emitting device chip 165 Or may be formed lower than the upper surface of the semiconductor light emitting device chip 165.

The sealing part 175 includes a transparent resin and a fluorescent material and is formed to cover the upper surface of the semiconductor light emitting device chip 165 and the upper surface of the reflective part 170. (The front surface 181, the rear surface 182, the left surface 183 and the right surface 184) of the reflecting portion 170 and the sealing portion 175 and the circumferential surface (the front surface 157) of the metal substrate 155, The rear surface 158, the left surface 159, and the right surface 161) are formed as continuous surfaces, and are also cut surfaces formed by the cutting process.

7 shows another example of the semiconductor light emitting device according to the present invention. A filler 147 may be provided in the gap 153 of the metal substrate 155. The gap 153 may be completely filled with the filler 147 or partially filled. The filler (147) should be made of an insulating material. The filler 147 may contain a phosphor. On the other hand, the filler 147 may contain a white resin together with or instead of the phosphor. Due to the filler 147, the reflection efficiency of the semiconductor light emitting device 150 can be improved.

8 is a view showing another example of the semiconductor light emitting device according to the present invention. The semiconductor light emitting device chip 165 includes a first electrode 171 and a second electrode 172, Pads 141 and 142 may be provided. Using the bonding pads 141 and 142, the semiconductor light emitting device chip 165 can be bonded to the upper surface 154 of the metal substrate 155 in a eutectic bonding manner. The bonding pad 141 is positioned between the first electrode 171 and the first conductive portion 151 of the metal substrate 155 and the second electrode 172 and the metal The bonding pads 142 are positioned between the second conductive portions 152 of the substrate 155.

Hereinafter, a method of manufacturing the semiconductor light emitting device according to the present disclosure will be described.

9 to 15 are views showing an example of a method of manufacturing the semiconductor light emitting device according to the present disclosure.

As shown in Fig. 9, a metal plate 155 'is prepared as a portion of the metal substrate 155. In order to fabricate a plurality of semiconductor light emitting devices 150 in a single process, the plate 155 'has a plurality of grooves 153' so that the top surface 154 'of the plate 155 is divided into a plurality of areas . In the plate 155 ', one side of the groove 153' with respect to the groove 153 'is the first conductive part and the other side is the second conductive part. The groove 153 'may be formed to have a certain depth through a wet etching or dry etching removal method or a mechanical cutting method using a blade or a wire. The material of the plate 155 'is not particularly limited as long as it is a conductive metal or a conductive semiconductor. A material such as W, Mo, Ni, Al, Zn, Ti, Cu, Si, And Cu or Cu-based alloys are suitable examples in consideration of electrical conductivity, thermal conductivity, reflectance, soldering characteristics, and the like.

9 and 10, a plurality of semiconductor light-emitting device chips 165 are fixed on the thus prepared plate 155 'along the grooves 153'. The semiconductor light emitting device chip 165 is positioned over the groove 153 '. Specifically, in the upper surface 154 'of the plate 155', the first electrode 171 is formed on the upper surface 154 'of the plate 155' on the left side of the groove 153 'with respect to the groove 153' And the second electrode 172 is bonded to the upper surface 154 'of the plate 155' on the right side of the groove 153 '. Such bonding may be performed using an Ag paste, or various methods already known in the field of semiconductor light emitting devices may be used.

11, the reflective agent 170 'is dispensed onto the entire upper surface 154' of the plate 155 'so as to cover all the semiconductor light emitting device chips 165, and the reflective agent 170' ). The reflective agent 170 'may include a liquid white resin having high reflection efficiency. The reflector 170 'is dispensed at a height slightly higher than the height of the top surface of the semiconductor light emitting device chip 165 so that the space between the semiconductor light emitting device chips 165 is filled with a gap. Therefore, the peripheral surface of the semiconductor light emitting device chip 165 is covered with the reflective material 170 '.

Then, as shown in FIG. 12, the reflective agent 170 'that is cured to the height of the top surface of the semiconductor light emitting device chip 165 is partially removed so that the top surface of the semiconductor light emitting device chip 165 is exposed. Removal of the cured reflector 170 'may be removed using mechanical methods such as brushing, lapping, polishing or CMP. Unlike sapphire, which has a very high hardness, the white resin can be easily removed because of its relatively low hardness even when cured. At this time, the upper surface of the reflective material 170 and the upper surface of the semiconductor light emitting device chip 165 have the same height.

Next, as shown in Fig. 13, the sealing agent 175 'is dispensed so as to cover the upper surfaces of all the semiconductor light-emitting device chips 165 and the upper surface of the reflective agent, and the sealing agent 175' is cured. The sealing agent 175 'may include a liquid transparent resin material such as silicon and a phosphor.

Subsequently, as shown in FIG. 14, the lower portion of the plate 155 'is partially removed so that the groove 153' provided in the plate 155 'is exposed toward the lower surface 156 of the plate 155'. That is, the plate 155 'is polished and / or wrapped on the lower surface 156' so that the groove 153 'is exposed toward the lower surface 156' of the plate 155 '. As the groove 153 'is exposed and opened to the side 156' of the plate 155 ', the two portions of the plate 155' facing the side with one groove 153 ' They are electrically insulated from each other.

Thereafter, as shown in Fig. 15, the sealing agent 175 'and the plate 155' are cut together with the reflective agent 170 'cured along the predetermined boundary B of the semiconductor light emitting element on the plane, Emitting device 150 is completed.

In the state that the semiconductor light emitting device chip 165 is fixed to the upper surface of the plate 155 'and covered with the reflective agent 170' and the sealing agent 175 ', the lower portion of the plate 155' So that the groove 153 'is exposed, and then the metal substrate 155 is formed by cutting along the boundaries of the individual semiconductor light emitting devices. The groove 153 'becomes the gap 153 of the metal substrate 155 and the two portions facing the side face with the gap 153 therebetween are connected to the first conductive portion 151 of the metal substrate 155 and the second conductive portion 151' And becomes the conductive portion 152. In addition, the reflecting portion 170 and the sealing portion 175 'of the individual semiconductor light emitting device are formed by cutting the reflecting agent 170' and the sealing agent 175 'together with the plate 155'.

The cutting of the plate 155 ', the reflective agent 170' and the encapsulant 175 'is performed at the same time so that the reflective portion 170 and the encapsulant (The front surface 181, the rear surface 182, the left surface 183 and the right surface 184) of the metal substrate 10 and the circumferential surfaces (the front surface 157, the rear surface 158, (The right side surface 159 and the right side surface 161) form a continuous surface as a cut surface.

The semiconductor light emitting device 150 is manufactured so as to have the dimension y between the front surface 157 and the rear surface 158 close to the short side length b of the semiconductor light emitting device chip 165 can do.

16 is a view showing an example of a backlight unit including the semiconductor light emitting device according to the present disclosure.

The backlight unit according to the present disclosure includes a light guide plate 110, a circuit board 130, and a semiconductor light emitting element 150, as shown in Fig.

The light guide plate 110 guides the light incident on the one side surface 111 to be emitted to the upper surface 113. Light emitted from the upper surface 113 of the light guide plate 110 is provided to the liquid crystal panel 10 (see FIG. 2).

The circuit board 130 is disposed on one side 111 side of the light guide plate 110 in parallel with the light guide plate 110 and the semiconductor light emitting element 150 is laid on the upper surface 131 of the circuit board 130 The light exit surface 149 is fixed to the side surface 111 of the light guide plate 110 so as to form the light source assembly 120.

The dimension y between the front surface 157 and the rear surface 158 of the semiconductor light emitting device 150 is set so as to satisfy the following relationship when the semiconductor light emitting device 150 is fixed to the circuit board 130 to form the light source assembly 120: Which is an important factor for determining the thickness of the light source assembly 120, is within the range of 50 to 1000um. When the dimension y between the front face 157 and the rear face 158 is 50um or less, efficient chip design is not easy. If the dimension y is 1000um or more, the conventional technique can sufficiently realize the chip. It is preferable that the dimension z between the upper surface 154 and the lower surface 156 of the semiconductor light emitting element 150 is within the range of 100 um to 2000 um. When the dimension z between the upper surface 154 and the lower surface 156 is 100um or less, it is difficult to fix the semiconductor light emitting device 150 to the circuit board 130, and when the dimension z is 2000um or more, .

FIG. 17 is a plan view showing a main part of the backlight unit of FIG. 16, and FIG. 18 is a sectional view taken along line A-A of FIG.

The circuit board 130 is disposed on one side 111 side of the light guide plate 110 while being laid down in parallel with the light guide plate 110. [

The semiconductor light emitting device 150 is formed such that the front surface 157 or the rear surface 158 of the metal substrate 155 is laid so as to face the upper surface 131 of the circuit substrate 130 and the upper surface 154 of the metal substrate 155 And is fixed to the upper surface 131 of the circuit board 130 so as to face the side surface 111 of the light guide plate 110. Therefore, the light exit surface 149 of the semiconductor light emitting device 150 faces the side surface 111 of the light guide plate 110. It is preferable that the side of the front surface 157 of the metal substrate 155 facing the upper surface 131 of the circuit board 130 or the side of the rear surface 158 of the circuit board 130 is not the lower surface 156 of the metal substrate 155, The first conductive portion 151 and the second conductive portion 152 are electrically connected to the circuit board 130, respectively. When the dimension z between the upper surface 154 and the lower surface 156 of the metal substrate 155 is larger than the dimension y between the front surface 157 and the rear surface 158, It is possible to secure a sufficient contact area between the first conductive portion 151 and the second conductive portion 152 and the upper surface 131 of the circuit board 130 at the rear surface 157 or the rear surface 158, The bonding reliability between the semiconductor light emitting device 150 and the circuit board 130 can be improved.

As described above, the circuit board 130 is disposed so as to lie parallel to the light guide plate 110, and the front surface and the rear surface of the semiconductor light emitting device 150 are thin enough to be close to the short side length b of the semiconductor light emitting device chip 165 And the semiconductor light emitting device 150 is laid down and fixed such that the front surface 157 or the rear surface 158 of the metal substrate 155 is in contact with the upper surface 131 of the circuit board 130. [

The thickness T of the light source assembly 120 to be slimmed in the light source assembly 120 composed of the circuit board 130 and the semiconductor light emitting device 150 is smaller than the thickness t of the circuit board 130 And the dimension y between the front surface 157 and the rear surface 158 of the light emitting element 150. [ The dimension y between the front surface 157 and the rear surface 158 of the semiconductor light emitting device 150 is set so as to surround the short side length b of the semiconductor light emitting device chip 165 and the periphery of the semiconductor light emitting device chip 165 Corresponds to a value obtained by adding the thickness of the reflective portion 170. [ The influence of the circuit board 130 on the thickness T of the light source assembly 120 is very limited as well as being very thin. The reflective portion 170 reflects light emitted from the side surface of the semiconductor light emitting device 150 and emits light having high directivity through the light output surface 149, The semiconductor light emitting device 150 is provided on the upper surface 131 of the circuit board 130 by laying the semiconductor light emitting device 150 on the upper surface 131 of the circuit board 130. The semiconductor light emitting device 150 has a very thin semiconductor light emitting element 50, do. Accordingly, it is possible to provide a significantly thinner light source assembly 120, that is, a significantly thinner backlight unit, which is suitable for the slimming trend of the liquid crystal display device.

Hereinafter, various embodiments of the present disclosure will be described.

(1) The semiconductor light emitting device according to (1), wherein the dimension between the upper surface and the lower surface of the metal substrate is larger than the dimension between the front surface and the rear surface.

(2) The semiconductor light emitting device of claim 1, wherein the semiconductor light emitting device chip has a long side and a short side, and the long side is placed on the top surface of the metal substrate so as to extend in the left and right direction of the metal substrate.

(3) The semiconductor light emitting device as described in any one of (1) to (3), wherein the reflection part contains a white resin.

(4) A semiconductor light emitting device, wherein a filler is provided in a gap.

(5) The semiconductor light emitting device according to any one of (1) to (4), wherein the peripheral surface (front surface, rear surface, left surface and right surface) of the metal substrate, the peripheral surface of the reflective portion and the peripheral surface of the sealing portion are continuously connected.

(6) The semiconductor light emitting device according to (6), wherein the peripheral surfaces (front surface, rear surface, left surface and right surface) of the metal substrate, the peripheral surface of the reflective portion and the peripheral surface of the sealing portion are cut surfaces.

(7) The semiconductor light emitting device chip is disposed on the metal substrate such that the first electrode and the second electrode are positioned below, the first electrode is bonded to the upper surface of the first conductive portion, and the second electrode is bonded to the upper surface of the second conductive portion Wherein the semiconductor light emitting device is a semiconductor light emitting device.

(8) A method of manufacturing a semiconductor light emitting device, wherein a filler is provided in a groove in a step of preparing a plate.

According to one semiconductor light emitting element according to the present disclosure, a semiconductor light emitting element with a small thickness can be provided.

According to another semiconductor light emitting device according to the present disclosure, a semiconductor light emitting device having excellent directivity of emitted light can be provided.

According to one method of manufacturing a semiconductor light emitting device according to the present disclosure, a semiconductor light emitting device in which a reflecting portion is integrated can be provided.

Another semiconductor light emitting device manufacturing method according to the present disclosure can provide a semiconductor light emitting device having a thin thickness while having a reflecting portion for reflecting light emitted to a side surface of the semiconductor light emitting device chip.

According to one backlight unit according to the present disclosure, it is possible to provide a backlight unit of a thin thickness.

According to another backlight unit according to the present disclosure, a thin liquid crystal display device can be provided through a backlight unit of a thin thickness.

According to another backlight unit according to the present disclosure, the reliability of the coupling between the semiconductor light emitting device constituting the light source assembly and the circuit board can be improved.

110: light guide plate 120: light source assembly
130: circuit board 141, 142: bonding pad
147: Filler 149: Light emitting surface
150: semiconductor light emitting element 151: first conductive part
152: second conductive portion 153:
155: metal substrate 165: semiconductor light emitting element chip
170: reflection part 171: first electrode
172: second electrode 175: sealing portion
176, 177: wire

Claims (11)

In the semiconductor light emitting device,
A first conductive portion and a second conductive portion which are disposed to face each other with a gap therebetween and are electrically separated by a gap and are formed in a hexahedron shape having upper, lower, front, rear, left, and right sides A metal substrate to be formed;
A first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, an active layer interposed between the first and second semiconductor layers and generating light by recombination of electrons and holes, A first electrode electrically connected to the first semiconductor layer, and a second electrode electrically connected to the second semiconductor layer, wherein the first electrode is bonded to the upper surface of the first conductive portion, A semiconductor light emitting element chip fixed on the upper surface of the metal substrate so as to be connected to the upper surface of the conductive portion;
A reflective portion formed on the upper surface of the metal substrate so as to surround the periphery of the semiconductor light emitting device chip; And
And an encapsulation part formed to cover the upper surface of the reflective part and the upper surface of the semiconductor light emitting device chip, wherein the encapsulation part emits light from the semiconductor light emitting device chip through the encapsulation part,
Wherein the first conductive portion and the second conductive portion extend in the direction opposite to the semiconductor light emitting device chip with respect to the upper surface of the metal substrate and the peripheral surfaces (front surface, rear surface, left surface, and right surface) Light emitting element. The method according to claim 1,
Wherein the metal substrate has a larger dimension between an upper surface and a lower surface than a dimension between the front surface and the rear surface. The method according to claim 1,
Wherein the semiconductor light emitting device chip has a long side and a short side, and the long side is placed on the top surface of the metal substrate so as to extend in the left and right direction of the metal substrate. The method according to claim 1,
Wherein the reflection part contains a white resin. The method according to claim 1,
And a filler is provided in the gap. The method according to claim 1,
Wherein the reflective portion is in contact with the side surface of the semiconductor light emitting device chip and surrounds the side surface of the semiconductor light emitting device chip. In the semiconductor light emitting device,
A first conductive portion and a second conductive portion which are disposed to face each other with a gap therebetween and are electrically separated by a gap and are formed in a hexahedron shape having upper, lower, front, rear, left, and right sides A metal substrate to be formed;
A first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, an active layer interposed between the first and second semiconductor layers and generating light by recombination of electrons and holes, A semiconductor light emitting device chip having a first electrode electrically connected to the first semiconductor layer and a second electrode electrically connected to the second semiconductor layer, the semiconductor light emitting device chip being fixed to the upper surface of the metal substrate;
A reflective portion formed on the upper surface of the metal substrate so as to surround the periphery of the semiconductor light emitting device chip; And
And an encapsulation portion formed to cover the upper surface of the reflective portion and the upper surface of the semiconductor light emitting device chip,
The circumferential surfaces (front surface, rear surface, left surface and right surface) of the metal substrate, the circumferential surface of the reflective portion, and the circumferential surfaces of the sealing portion are continuously connected. In the semiconductor light emitting device,
A first conductive portion and a second conductive portion which are disposed to face each other with a gap therebetween and are electrically separated by a gap and are formed in a hexahedron shape having upper, lower, front, rear, left, and right sides A metal substrate to be formed;
A first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, an active layer interposed between the first and second semiconductor layers and generating light by recombination of electrons and holes, A semiconductor light emitting device chip having a first electrode electrically connected to the first semiconductor layer and a second electrode electrically connected to the second semiconductor layer, the semiconductor light emitting device chip being fixed to the upper surface of the metal substrate;
A reflective portion formed on the upper surface of the metal substrate so as to surround the periphery of the semiconductor light emitting device chip; And
And an encapsulation portion formed to cover the upper surface of the reflective portion and the upper surface of the semiconductor light emitting device chip,
Wherein the peripheral surface of the metal substrate (the front surface, the rear surface, the left surface and the right surface), the peripheral surface of the reflective portion, and the peripheral surface of the sealing portion are cut surfaces. A method of manufacturing a semiconductor light emitting device,
Preparing a plate including a first conductive portion and a second conductive portion and a groove formed between the first conductive portion and the second conductive portion to separate the first conductive portion and the second conductive portion;
A first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, an active layer interposed between the first and second semiconductor layers and generating light by recombination of electrons and holes, A first electrode electrically connected to the first semiconductor layer, and a second electrode electrically connected to the second semiconductor layer, on a top surface of the plate;
Covering the semiconductor light emitting device chip with a reflective material;
Partially removing the reflective agent in accordance with the height of the upper surface of the semiconductor light emitting device chip so that the upper surface of the semiconductor light emitting device chip is exposed after curing the reflective agent;
Covering the upper surface of the reflective agent and the upper surface of the semiconductor light emitting device chip with an encapsulating agent;
Partially removing the lower portion of the plate so that the groove is exposed to the lower side of the plate; And
And cutting the plate and the sealing agent together along a predetermined boundary of the semiconductor light emitting device. The method of claim 9,
Wherein a filler is provided in the groove in the step of preparing the plate. In the backlight unit,
A light guide plate guiding light incident on one side surface to be emitted to an upper surface;
A circuit board laid on one side of the light guide plate; And
A first conductive portion and a second conductive portion which are disposed to face each other with a gap therebetween and are electrically separated by a gap and are formed in a hexahedron shape having upper, lower, front, rear, left, and right sides A metal substrate to be formed,
A first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, an active layer interposed between the first and second semiconductor layers and generating light by recombination of electrons and holes, A first electrode electrically connected to the first semiconductor layer, and a second electrode electrically connected to the second semiconductor layer, wherein the first electrode is bonded to the upper surface of the first conductive portion, A semiconductor light emitting element chip fixed on the upper surface of the metal substrate so as to be bonded to the upper surface of the conductive portion,
A reflective portion formed on the upper surface of the metal substrate so as to surround the periphery of the semiconductor light emitting device chip,
And an encapsulating portion formed to cover the upper surface of the reflecting portion and the upper surface of the semiconductor light emitting device chip,
Light from the semiconductor light emitting device chip is emitted through the sealing portion and the first conductive portion and the second conductive portion extend in the direction opposite to the direction in which the light is emitted through the sealing portion and the peripheral surface (front, rear, And the right side) are cut surfaces,
The front surface or back surface of the metal substrate is laid down so as to face the top surface of the circuit board and the upper surface of the metal substrate is fixed to the upper surface of the circuit board so that the upper surface of the metal substrate faces one side of the light guide plate, And a semiconductor light emitting element electrically connected to the circuit board through the front surface or the rear surface of each of the conductive parts.

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