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KR101423451B1 - Luminous element - Google Patents

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Publication number
KR101423451B1
KR101423451B1 KR1020060096318A KR20060096318A KR101423451B1 KR 101423451 B1 KR101423451 B1 KR 101423451B1 KR 1020060096318 A KR1020060096318 A KR 1020060096318A KR 20060096318 A KR20060096318 A KR 20060096318A KR 101423451 B1 KR101423451 B1 KR 101423451B1
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KR
South Korea
Prior art keywords
light emitting
heat sink
substrate
heat
emitting device
Prior art date
Application number
KR1020060096318A
Other languages
Korean (ko)
Other versions
KR20080029549A (en
Inventor
이강덕
Original Assignee
서울반도체 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Priority to KR1020060096318A priority Critical patent/KR101423451B1/en
Publication of KR20080029549A publication Critical patent/KR20080029549A/en
Application granted granted Critical
Publication of KR101423451B1 publication Critical patent/KR101423451B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Led Device Packages (AREA)

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a light emitting device, and more particularly to a light emitting device provided with a heat sink. The present invention can provide a light emitting device having an improved heat dissipation area and a heat dissipating plate including silver having a high temperature conductivity, thereby improving the heat dissipation performance of the light emitting device and providing excellent lifetime and efficiency. In addition, by making the thickness of the heat sink equal to or greater than the thickness of the lead pattern, the heat sink is connected to the substrate of the external device to which the light emitting device is applied, thereby further enhancing the heat radiation performance of the light emitting device.

Light emitting element, heat sink, lead pattern, silver, temperature conductivity, area

Description

[0001] LUMINOUS ELEMENT [0002]

1 is a perspective view of a light emitting device according to a first embodiment of the present invention;

2 is a cross-sectional view taken along line A-A in Fig.

3 is a perspective view of a light emitting device according to a second embodiment of the present invention.

4 is a cross-sectional view taken along line B-B in Fig. 3;

Description of the Related Art

100: substrate 102: base plate

104, 105: lead pattern 106: heat slug

108: heat sink 120: light emitting chip

140: Wiring 160: Molding part

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a light emitting device, and more particularly to a light emitting device provided with a heat sink.

A light emitting diode (LED) refers to a device that generates a small number of injected carriers (electrons or holes) using a P-N junction structure of a compound semiconductor and emits a predetermined light by recombination of the carriers. The light emitting device using the light emitting diode as described above has lower power consumption and lifespan from several tens to several tens times as compared with conventional light bulbs or fluorescent lamps, and is superior in terms of power consumption and durability. Despite these advantages, they have not been used in display devices and lighting devices due to their brightness being lower than conventional light bulbs or light sources such as fluorescent lamps. Of course, if the current applied to the light emitting diode is increased or the number of the light emitting diodes is used, the brightness of the light emitting diode increases, but heat is excessively increased as the current increases or the heat emitted from the plurality of light emitting diodes is superimposed .

The light emitting device according to the related art attempts to solve the above problems by inserting a heat sink directly connected to a light emitting chip mounted on a substrate into a printed circuit board. However, the light emitting device according to the related art tries to radiate heat only by the heat sink formed on the lower surface of the substrate, and thus the heat radiation effect is limited due to the limited heat radiation area.

In addition, although the light emitting device according to the related art is formed of copper (Cu) as the heat sink, the necessity of a material having a heat radiation effect due to a limited heat dissipation area is required.

SUMMARY OF THE INVENTION An object of the present invention is to solve the problems of the prior art described above, and to provide a light emitting device having improved heat dissipation performance of a light emitting device and excellent lifetime and efficiency.

According to an aspect of the present invention, there is provided a light emitting device including a substrate having lead patterns formed on one side and the other side, a heat sink formed on an upper surface and a side surface of the substrate, and a light emitting chip mounted on the heat sink and electrically connected to the lead pattern Emitting device. At this time, the heat dissipation plate may extend on the lower surface of the substrate.

The heat slug may further include a heat slug formed to penetrate the substrate, and the heat slug may be connected to the light emitting chip and the heat sink.

In addition, the lead pattern may include first and second lead patterns, and the heat sink may be formed between the first and second lead patterns. However, the present invention is not limited thereto, and the lead pattern may include first and second lead patterns, and the heat sink may be connected to the first lead pattern or the second lead pattern.

The thickness of the heat sink is preferably equal to or larger than the first and second lead patterns. In addition, the heat sink may include gold or silver.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

It will be apparent to those skilled in the art that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, It is provided to let you know. Like reference numerals refer to like elements throughout.

FIG. 1 is a perspective view of a light emitting device according to a first embodiment of the present invention, and FIG. 2 is a cross-sectional view taken along line A-A of FIG.

1 and 2, the light emitting device according to the first embodiment of the present invention includes a base plate 102, a lead pattern 104 formed on one side and the other side of the base plate 102, And a light emitting chip 120 mounted on a heat sink 108 formed on a top surface of the base plate 102. The light emitting chip 120 is mounted on the upper surface of the base plate 102, . The light emitting device according to the present embodiment includes wiring 140 for electrically connecting the light emitting chip 120 and the lead pattern 104 and sealing the light emitting chip 120 and the wiring 140 And a molding part 160 for forming a molding part.

The substrate 100 is for mounting a light emitting chip 120 and capable of applying external power. The substrate 100 may be a double-sided printed circuit board (DS PCB) A substrate 100 on which lead patterns 104 are formed on both sides of the substrate 102 can be used. In the substrate 100 according to the present invention, a heat slug 106 is formed in a region where the light emitting chip 120 is mounted. The heat slug 106 may be formed by forming a hole through the substrate 100 vertically and filling the hole with a material having a high thermal conductivity. The heat slug 106 may be formed in a rectangular column shape as shown in the drawing, but is not limited thereto, and may be a columnar or polygonal columnar shape.

The lead pattern 104 includes first and second lead patterns 104a and 104b as an electrode for applying power to the light emitting chip 120. [ The first and second lead patterns 104a and 104b may be formed on one side and the other side of the base plate 102 to mount the light emitting chip 120 on the central portion of the base plate 102. In addition, the first and second lead patterns 104a and 104b are preferably spaced apart from each other to be electrically insulated from each other. In this case, the top-emitting type light emitting device in which the light emitting surface is the upper direction of the light emitting device, the light emitting chip 120 and the lead pattern 104 mounted on the substrate 100 are connected by the wiring 140, The external power source is applied to the lead pattern 104 formed on the opposing face of the mounted substrate 100. [ Therefore, the lead pattern 104 according to the present embodiment forms a lead pattern 104 on the upper and lower surfaces of the substrate 100, and forms the lead pattern 104 in a shape surrounding the base plate 102 So that the lead pattern 104 formed on the upper surface of the base plate 102 and the lead pattern 104 formed on the lower surface are electrically connected. At this time, it is preferable that the lead pattern 104 is not connected to the heat slug 106.

The heat dissipation plate 108 discharges heat generated during operation of the light emitting chip 120 to the outside quickly. The heat dissipation plate 108 may be formed of a metal material having excellent thermal conductivity such as silver (Ag). The heat sink 108 may be formed on the upper surface and the side surface of the base plate 102. That is, the heat dissipation plate 108 is formed in a shape that surrounds the upper surface and the side surface of the base plate 102 in a "C" shape, and the heat dissipation plate 108 formed on the upper surface of the base plate 102 is in contact with the heat slug 106 So as to maximize heat dissipation performance. The heat dissipating plate 108 may extend to the lower surface of the base plate 102 and the heat dissipating plate 108 formed on the lower surface of the heat slug 106 and the base plate 102 may be formed on the base plate 102, The heat slug 106 may be connected to the heat sink 108 formed on the upper surface thereof. In addition, the heat sink 108 may be connected to any one of the first lead pattern 104a and the second lead pattern 104b. When the heat sink 108 is connected to either the first lead pattern 104a or the second lead pattern 104 as described above, the first lead pattern 104a or the second lead pattern 104a connected to the heat sink 108, The entire heat dissipation function can be performed, and the heat dissipation effect can be further increased. At this time, when both the heat sink 108 and the first and second lead patterns 104a and 104b are connected, the heat sink 108 is connected to only one of the first and second lead patterns 104a and 104b .

In addition, the light emitting device according to the present invention may be formed of silver (Ag) having a high temperature conductivity, so that the heat dissipation effect is better than that of the conventional light emitting device.

Table 1 shows the thermal properties of typical metals that can be used as heat sinks.

<Table 1>

matter Temperature
(° C) Weight
(Kg / m3) specific heat
(㎉ / ㎏ ℃) Thermal conductivity
(㎉ / 캜) Temperature conductivity
(M &lt; 2 &gt; / h) 18-8
Stainless steel 20 7820 0.11 14 0.016 Carbon steel 20 7830 0.11 46 0.053 cast iron 20 7270 0.10 45 0.062 iron 20 7900 0.108 62 0.073 bronze 20 8670 0.082 50 to 60 0.080 Nickel (99.9%) 20 8910 0.101 77 0.082 lead 20 11370 0.031 30 0.086 platinum 20 21450 0.032 60 0.088 Chil Samhyang Dong 20 5820 0.092 95 0.123 tungsten 20 19300 0.032 170 0.275 aluminum 20 2710 0.214 196 0.340 Copper 20 9300 0.10 320 0.370 gold 20 19320 0.031 254 0.425 Sterling silver 20 10530 0.056 360 0.613

Referring to Table 1, it can be seen that the pure copper which is the material of the heat sink 108 of the present invention has a thermal conductivity of 0.613 m 2 / h, which is about 1.7 times higher than the thermal conductivity of 0.370 m 2 / h, which is the thermal conductivity of copper heat sink used in the prior art . It can also be seen that gold (Au) having a temperature conductivity of 0.425 m 2 / h is also about 1.15 times higher in thermal conductivity than copper (Cu) used in the prior art. Accordingly, the heat sink 108 according to the present invention preferably uses gold (Au) or silver (Ag) having a higher temperature conductivity than that of copper (Cu) used in the prior art, and has a higher temperature conductivity than gold It is more preferable to further strengthen the heat radiation effect by using silver (Ag).

Meanwhile, the light emitting chip 120 uses a phenomenon in which light is emitted by recombination of minority carriers (electrons or holes) as a compound semiconductor laminated structure having a p-n junction structure. The light emitting chip 120 may include first and second semiconductor layers (not shown) and an active layer (not shown) formed between the first and second semiconductor layers. In this embodiment, the first semiconductor layer is a P-type semiconductor layer, and the second semiconductor layer is an N-type semiconductor layer. A P-type electrode (not shown) is formed on one surface of the P-type semiconductor layer of the light emitting chip 120, and an N-type electrode (not shown) is formed on one surface of the N-type semiconductor layer. At this time, the N-type electrode is connected to the first lead pattern 104a by the first wiring 140a, and the P-type electrode is electrically connected to the second lead pattern 104b by the second wiring 140b . However, the present invention is not limited thereto, and the light emitting chip 120 according to the present invention can use vertical light emitting chips in addition to the horizontal light emitting chip 120 as described above, and various kinds of light emitting chips emitting visible light, ultraviolet light, Can be used.

The wiring 140 is for electrically connecting the light emitting chip 120 and the first and second lead patterns 104a and 104b and may be formed of gold (Au), silver (Ag), or the like through a process such as a wire bonding process. And may be formed of a metal having excellent ductility and electrical conductivity such as aluminum (Al). Meanwhile, when the light emitting chip 120 is vertical, one wire 140 may be used to electrically connect the second lead pattern 104b and the vertical light emitting chip.

The molding part 160 is used to seal the light emitting chip 120 and fix the wiring 140 connected to the light emitting chip 120. The molding part 160 may be formed by a transfer molding method using a mold press. The molding part 160 may be formed in a specific shape to seal the light emitting chip 120 to fix the wiring 140, and may serve as a lens for collecting light emitted from the light emitting chip 120 It is possible. The molding part 160 is made of a light-transmitting resin because the light emitted from the light emitting chip 120 must be transmitted to the outside.

In this case, a diffusion agent (not shown) for uniformly emitting light by diffusing light emitted from the light emitting chip 120 by scattering may be further included in the molding part 160. As the diffusion agent, barium titanate, titanium oxide, aluminum oxide, silicon oxide, or the like can be used. In addition, the molding unit 160 may further include a phosphor (not shown). The phosphor absorbs a part of the light emitted from the light emitting chip 120 and emits light having a wavelength different from that of the absorbed light, and is composed of a host lattice and active ions mixed with impurities at appropriate positions. The role of the active ions determines the emission color by determining the energy level involved in the emission process, and the emission color is determined by the energy gap between the base state and the excited state of the active ions in the crystal structure.

Hereinafter, a light emitting device according to a second embodiment of the present invention will be described with reference to the drawings. The following description will not be repeated or will be described briefly in the description of the first embodiment.

FIG. 3 is a perspective view of a light emitting device according to a second embodiment of the present invention, and FIG. 4 is a cross-sectional view taken along line B-B of FIG.

3 and 4, the light emitting device according to the second embodiment of the present invention includes a base plate 102, a lead pattern 105 formed on one side and the other side of the base plate 102, And a light emitting chip 120 mounted on the heat dissipation plate 108. The light emitting chip 120 is mounted on the heat dissipation plate 108. The light emitting chip 120 is mounted on the heat dissipation plate 108, The light emitting device according to the present embodiment includes wiring 140 for electrically connecting the light emitting chip 120 and the lead pattern 105 and sealing the light emitting chip 120 and the wiring 140 And a molding part 160 for forming a molding part.

The substrate 100 is for forming a structure that mounts the light emitting chip 120 and is capable of applying external power. Like the above-described first embodiment, the substrate 100 is mounted on the base plate 102 The lead pattern 105 may be formed on both surfaces of the substrate 100. Also, in the substrate 100 according to the present embodiment, the heat slug 106 may be formed in a region where the light emitting chip 120 is mounted. The heat slug 106 may be formed by forming a hole through the substrate 100 vertically and filling the hole with a material having a high thermal conductivity.

The lead pattern 105 is an electrode for applying power to the light emitting chip 120 and includes first and second lead patterns 105a and 105b. The first and second lead patterns 105a and 105b may be formed on one side and the other side of the base plate 102 to mount the light emitting chip 120 on the central portion of the base plate 102. The first and second lead patterns 105a and 105b are preferably spaced apart from each other to be electrically isolated from each other.

In order to electrically connect the lead patterns formed on the upper and lower portions of the base plate 102, the lead pattern according to the first embodiment is formed in a " . However, unlike the lead pattern of the first embodiment described above, the lead pattern 105 according to this embodiment forms the through-hole 109 to connect the lead pattern 105 formed on the upper and lower parts of the base plate 102 do. That is, in order to electrically connect the lead pattern 105 formed on the upper and lower portions of the base plate 102 after the lead pattern 105 is formed and the substrate 100 is cut, And a conductor can be formed on the inner circumference of the through hole 109. [0050] At this time, the conductor formed on the inner circumference of the through hole 109 can be formed by a method such as plating of a metal such as copper (Cu).

The heat dissipation plate 108 is for rapidly discharging heat generated during the operation of the light emitting chip 120 to the outside, and is formed of a metal material having excellent thermal conductivity, such as Ag, as in the first embodiment. . The heat sink 108 may be formed on the upper and lower surfaces of the base plate 102 and on one side and the other side. The heat sink 108 is formed in a shape that wraps around the upper and lower surfaces of the base plate 102 and the side surfaces of the heat sink 108. The heat sink 108 formed on the upper and lower surfaces of the base plate 102, And the heat generated by the light emitting chip 120 may be discharged from the heat sink 108 through the heat slug 106. In this case,

In addition, the heat sink 108 according to the present invention may be connected to a substrate of an external device to which the light emitting device is mounted, so that the heat generated from the light emitting chip 120 may be transferred to the substrate of the device to be radiated. The thickness h 1 of the heat sink 108 formed on the lower surface of the base plate 102 is preferably equal to or greater than the thickness h 2 of the lead pattern 105 Do. That is, when the thickness h 1 of the heat sink 108 is equal to or greater than the thickness h 2 of the lead pattern 105 under the assumption that the lower surface of the base plate 102 is flat, The heat generated by the light emitting chip 120 can be transferred to the substrate of the device and the heat can be dissipated. When the heat sink 108 is connected to the substrate of the device as described above, the heat dissipation area of the light emitting device according to the present invention is further increased. Accordingly, the heat generated by the light emitting chip 120 can be discharged to the outside And the lifetime and efficiency of the light emitting device can be increased.

As described above, in the light emitting device according to the present embodiment, the heat radiating plate 108 is formed on the upper and lower surfaces of the base plate 102 on one side and the other side, and the heat sink 108 is formed of silver The heat generated by the light emitting chip 120 can be discharged to the outside quickly by using the heat dissipating plate 108 and the Ag heating plate 108, thereby increasing the lifetime and efficiency of the light emitting device.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the present invention as defined by the appended claims. You will understand.

As described above, the present invention can provide a light emitting device with improved heat dissipation performance and excellent lifetime and efficiency by forming a heat sink including silver with a high heat dissipation area and high temperature conductivity.

In addition, by making the thickness of the heat sink equal to or greater than the thickness of the lead pattern, the heat sink is connected to the substrate of the external device to which the light emitting device is applied, thereby further enhancing the heat radiation performance of the light emitting device.

Claims (11)

A substrate on which a lead pattern is formed, A heat sink formed on an upper surface, a side surface, and a lower surface of the substrate, A heat slug formed to penetrate the substrate; And a light emitting chip mounted on the heat sink and electrically connected to the lead pattern, The heat slug is connected to the heat sink, Wherein the lead pattern includes first and second lead patterns, Wherein the first and second lead patterns extend from an upper surface to a lower surface of the substrate, Wherein a thickness of the heat sink is equal to or greater than a thickness of the first and second lead patterns. delete The light emitting device of claim 1, wherein the heat slug is filled with a heat dissipating material. The light emitting device of claim 1, wherein the lead pattern includes first and second lead patterns, and the heat sink is formed between the first and second lead patterns. delete delete The light emitting device according to any one of claims 1, 3 and 4, wherein the heat sink comprises gold or silver. A substrate on which a lead pattern is formed; A heat sink formed on the upper surface, the side surface, and the lower surface of the substrate; And And a light emitting chip mounted on the heat sink and electrically connected to the lead pattern, The heat sink extends from a top surface of the substrate to a side surface of the substrate, and the heat sink surrounds a top surface, a side surface, and a bottom surface of the substrate, Wherein the lead pattern includes first and second lead patterns spaced from each other, Wherein the first and second lead patterns extend from a top surface of the substrate to a side surface and a bottom surface of the substrate, respectively, Wherein the thickness of the heat sink is equal to or larger than the first and second lead patterns. delete delete The method of claim 8, And a portion formed on a side surface of the substrate in the first and second lead patterns is formed on a side surface of the substrate identical to a portion formed on a side surface of the substrate in the heat sink.
KR1020060096318A 2006-09-29 2006-09-29 Luminous element KR101423451B1 (en)

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KR101423451B1 true KR101423451B1 (en) 2014-07-25

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200054637A (en) * 2018-11-12 2020-05-20 주식회사 루멘스 Side view type light emitting diode package and manufacturing method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002368277A (en) * 2001-06-05 2002-12-20 Rohm Co Ltd Chip semiconductor light-emitting device
JP2005183531A (en) * 2003-12-17 2005-07-07 Sharp Corp Semiconductor light emitting device
JP2006093470A (en) * 2004-09-24 2006-04-06 Toshiba Corp Lead frame, light-emitting device, and manufacturing method thereof
KR20060069739A (en) * 2004-12-18 2006-06-22 박종만 Package for light emitting device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002368277A (en) * 2001-06-05 2002-12-20 Rohm Co Ltd Chip semiconductor light-emitting device
JP2005183531A (en) * 2003-12-17 2005-07-07 Sharp Corp Semiconductor light emitting device
JP2006093470A (en) * 2004-09-24 2006-04-06 Toshiba Corp Lead frame, light-emitting device, and manufacturing method thereof
KR20060069739A (en) * 2004-12-18 2006-06-22 박종만 Package for light emitting device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200054637A (en) * 2018-11-12 2020-05-20 주식회사 루멘스 Side view type light emitting diode package and manufacturing method thereof
KR102634319B1 (en) 2018-11-12 2024-02-08 주식회사 루멘스 Side view type light emitting diode package and manufacturing method thereof

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