KR101330516B1 - Method of forming amorphous carbon film - Google Patents

Abstract

Disclosed is an amorphous carbon film formation method capable of improving etching resistance. The method includes loading a substrate to be processed into a substrate support of a plasma processing apparatus having a shower head and a substrate support facing each other in a chamber, and through the shower head, a first process material toward the substrate to be processed. Spraying a gas, grounding the chamber and the shower head, and applying a first DC power source for generating a negative potential to the substrate support and a first RF power source for generating a plasma to form a first on the substrate to be processed. Forming an amorphous carbon film, spraying a second process material gas through the shower head toward the substrate, and grounding the chamber and the shower head and applying a negative potential to the substrate support; A property different from the first amorphous carbon film on the substrate to be applied by applying a DC power source and a second RF power source for generating plasma First and forming a second amorphous carbon film.

Description

Amorphous carbon film formation method {METHOD OF FORMING AMORPHOUS CARBON FILM}

The present invention relates to a method of forming an amorphous carbon film, and more particularly, to a method of forming an amorphous carbon film used in a semiconductor manufacturing process.

2. Description of the Related Art As miniaturization and high integration of a semiconductor device have progressed, more and more minute patterns have been demanded. Particularly, there is a great need for a process for forming fine patterns on various layers or regions formed on a semiconductor substrate. In the fabrication of semiconductor devices, the formation of the pattern is usually accomplished through a process called photolithography.

For example, a hard mask layer, an antireflection film, and a photoresist film as an etch mask are stacked on a material layer on which a pattern is to be formed, and then exposure, development, etching, ashing, A desired pattern can be formed on the material layer. Various photolithography processes and materials have been developed to more precisely and efficiently manufacture highly integrated and high performance devices. In recent years, an amorphous carbon film for a hard mask has been used to form such a fine pattern.

In order to form such an amorphous carbon film, a plasma enhanced chemical vapor deposition (PECVD) apparatus, which is a plasma processing apparatus, is widely used. PECVD equipment generates plasma and is widely used for etching as well as thin film deposition.

1 is a schematic perspective view showing a plasma processing apparatus used to form an amorphous carbon film in the related art.

 Referring to FIG. 1, the plasma processing apparatus 100 used to form a conventional amorphous carbon film includes a shower head 300 in a state in which a substrate S is mounted on an upper side of a fingerboard support 210 in a chamber 110. Spraying the gas supplied through the raw material supply unit 700 through), and the shower head 300 converts the gas into a plasma by the RF power supplied from the RF power supply unit 600, thereby forming an upper portion of the substrate S. An amorphous carbon film is formed.

However, the corrosion resistance of the amorphous carbon film thus formed is still insufficient, so that the function as a mask in forming a fine pattern of the substrate is insufficient. Therefore, efforts are underway to improve this.

Accordingly, the problem to be solved by the present invention is to provide a method for forming an amorphous carbon film that can improve the etching resistance.

The amorphous carbon film forming method according to an exemplary embodiment of the present invention for achieving the above object is to load the substrate to be processed into the substrate support of the plasma processing apparatus having a shower head and a substrate support facing each other in the chamber; And spraying a first process raw material gas through the shower head toward the substrate to be processed, grounding the chamber and the shower head, and applying a first DC power supply and plasma for applying a negative potential to the substrate support. Applying a first RF power to generate a first amorphous carbon film on the substrate, injecting a second process raw material gas through the shower head toward the substrate, and the chamber And a second DC power supply for grounding the shower head and generating a second DC power supply and plasma for applying a negative potential to the substrate support. Applying an RF power to form a second amorphous carbon film of a different nature from the first amorphous carbon film on the substrate to be treated.

In this case, the first amorphous carbon film has a lower stress than the second amorphous carbon film, and the second amorphous carbon film has higher etching resistance than the first amorphous carbon film.

For this purpose, the first process material gas, the second process including oxygen (O ₂₎ than the material gas further, or may include a larger amount of oxygen (O _2).

On the other hand, the power of the second DC power supply can be controlled to be higher than the power of the first DC power supply.

For example, the first DC power supply and the second DC power supply may be pulsed DC power supplies, and the second DC power supply may be controlled to be high frequency compared to the first DC power supply.

On the other hand, the second RF power can be controlled to have a higher power than the first RF power.

According to another exemplary embodiment of the present invention, there is provided a method of forming an amorphous carbon film, comprising: loading a substrate to be processed into a substrate support of a plasma processing apparatus having a shower head and a substrate support facing each other in a chamber; Injecting process material gas through the head toward the target substrate, and applying a DC power source for grounding the chamber and the shower head and applying a DC power source for applying a negative potential to the substrate support unit and an RF power source for generating plasma; Forming an amorphous carbon film on the substrate to be processed. At this time, the amorphous carbon film is formed while reducing the amount of oxygen (O ₂ ) contained in the process raw material gas.

At this time, the amount of oxygen (O ₂ ) contained in the process raw material gas can be reduced step by step.

Alternatively, the amount of oxygen (O ₂ ) contained in the process raw material gas may be continuously reduced.

According to the amorphous carbon film forming method according to the present invention, the amorphous carbon film may be composed of at least two layers of an amorphous carbon film having a high etching resistance and an amorphous carbon film having a low stress, thereby achieving a function as a mask, and in a subsequent process, Problems that may be caused by the amorphous carbon film of stress can be solved at the same time.

1 is a schematic cross-sectional view showing a plasma processing apparatus conventionally used to form an amorphous carbon film.
2 is a schematic cross-sectional view showing a plasma processing apparatus used to implement a plasma processing method according to an exemplary embodiment of the present invention.
Figs. 3 and 4 are diagrams for explaining the differences of the plasma processing apparatuses shown in Figs. 1 and 2, respectively, and are conceptual diagrams showing the electric charges applied by the plasma processing apparatuses according to Figs. 1 and 2, respectively.
5 is a flowchart illustrating a method of forming an amorphous carbon film according to an exemplary embodiment of the present invention.
6 is a graph showing the relationship between the amount of oxygen (O ₂ ) contained in the injected process raw material gas and stress.
7 is a graph showing a change in stress depending on the thicknesses of the first amorphous carbon film and the second amorphous carbon film.
FIG. 8 is a schematic cross-sectional view of an amorphous carbon film corresponding to the first case shown in FIG. 7 (when formed only with a second amorphous carbon film).
FIG. 9 is a cross-sectional view schematically illustrating an amorphous carbon film corresponding to the second case illustrated in FIG. 7 (when the thickness of the second amorphous carbon film is the same as the thickness of the first amorphous carbon film).
FIG. 10 is a cross-sectional view schematically illustrating an amorphous carbon film corresponding to the third case shown in FIG. 7 (when the second amorphous carbon film is formed thinner than the first amorphous carbon film).
FIG. 11 is a schematic cross-sectional view of an amorphous carbon film corresponding to the fourth case (when the second amorphous carbon film is formed thicker than the first amorphous carbon film) shown in FIG. 7.
12 is a graph showing a relationship between applied DC power and stress.
13 is a graph showing the relationship between the applied RF power and stress.
14 is a flowchart illustrating a method of forming an amorphous carbon film according to another exemplary embodiment of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS The above and other features and advantages of the present invention will become more apparent from the following detailed description of the present invention when taken in conjunction with the accompanying drawings, It will be possible. The present invention is not limited to the following embodiments and may be embodied in other forms. The embodiments disclosed herein are provided so that the disclosure may be more complete and that those skilled in the art will be able to convey the spirit and scope of the present invention. In the drawings, the thickness of each device or film (layer) and regions is exaggerated for clarity of the present invention, and each device may have various additional devices not described herein.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Reference will now be made in detail to the preferred embodiments of the present invention, examples of which are illustrated in the accompanying drawings.

2 is a schematic cross-sectional view showing a plasma processing apparatus used to implement a plasma processing method according to an exemplary embodiment of the present invention.

2, the plasma processing apparatus 200 used to implement the plasma processing method according to an exemplary embodiment of the present invention includes a chamber 110, a substrate support unit 200, a shower head 300, The DC power supply unit 400, the filter 500, the RF power supply unit 600, and a raw material supply unit 700 may be included.

The chamber 110 forms a reaction space therein and accommodates the showerhead 300 and the substrate support 210 of the substrate support unit 200. The chamber 110 may be manufactured to have, for example, a cylindrical cylinder or a rectangular box shape. However, the present invention is not limited thereto, and the shape of the chamber 110 may be variously formed depending on the shape of the substrate S to be processed.

Also, although the chamber 110 is shown as being integrally formed, the lower chamber and the upper chamber may be separated from each other. Although not shown in the drawings, an exhaust port for exhausting the interior of the chamber 110, a substrate inlet for loading or unloading the substrate S, and a pressure regulator for regulating the pressure inside the chamber 110 may be formed.

The substrate supporting unit 200 may include a substrate supporting part 210 and a driving part 220. The substrate support part 210 is disposed in the chamber 110 to support the substrate S. As the substrate supporting unit 210, an electrostatic chuck for supporting the substrate S using electrostatic force or a vacuum chuck for supporting the substrate S using a vacuum suction force may be used. Further, although not shown, the substrate supporting unit 210 may further include a heating member to heat the substrate S mounted on the substrate supporting unit 210.

The driving unit 220 drives the substrate supporting unit 210. The driving unit 220 may include a shaft 221 for supporting the substrate support 210 and a power unit 222 for moving the shaft 221 upward and downward or rotating the shaft 221.

The showerhead 300 is disposed to face the substrate support 210. At this time, the showerhead 300 is grounded together with the chamber 110.

The shower head 300 injects the raw material supplied from the raw material supply part 700 toward the target substrate S disposed on the substrate supporting part 210.

For example, in order to form an amorphous silicon film on the substrate S, for example, acetylene (C ₂ H ₂ ), or propene (C ₃ H ₆ ) gas may be used. Alternatively, a trimethylbenzene solution may be used. You may heat and use about 340 degree-380 degree.

At this time, as the carrier gas, any one or a plurality of gases selected from the group consisting of carbon dioxide gas, helium, argon gas and hydrogen gas may be used in combination.

The RF power supply unit 600 applies RF power to the substrate support unit 210 to change the source gas injected through the showerhead 300 into plasma. Although not shown, the RF power supply 600 may be connected to the substrate support 210 through an RF matching circuit. The matching circuit blocks the DC power of the system from being applied to the RF power supply 600.

The filter 500 filters the RF power supplied from the RF power supply unit 600 to the DC power supply unit 400 to protect the DC power supply unit 400.

The DC power supply unit 400 is connected in series with the filter 500, which are connected in parallel with the RF power supply unit 600. Here, DC power supply is interpreted as the concept of optical which includes the pulse power supply which has broad directionality and is not fixed in size besides the power supply which is constant in magnitude and direction.

The DC power supply unit 400 applies a negative potential to the substrate support 210 to induce a lower potential than the grounded showerhead 300 to more strongly enhance the positive ions directed toward the substrate S Inducing a change in molecular bonding of the amorphous carbon film. More specifically, the CH bond of the amorphous carbon film is converted into the C = C bond, thereby increasing the film density or strength of the amorphous carbon film and improving the corrosion resistance.

Figs. 3 and 4 are diagrams for explaining the differences of the plasma processing apparatuses shown in Figs. 1 and 2, respectively, and are conceptual diagrams showing the electric charges applied by the plasma processing apparatuses according to Figs. 1 and 2, respectively.

In FIG. 1, the substrate support 210 is grounded and RF power is applied through the showerhead 300, whereas in FIG. 2, the showerhead 300 is grounded and the substrate support 210 is subjected to negative potential and RF power do.

At this time, if the same potential difference is applied between the shower head 300 and the substrate supporting part 210, the shower head 300 and the substrate supporting part 210 can be rotated independently of the absolute values of the potentials of the shower head 300 and the substrate supporting part 210 (Q = CV), it may be thought that there is no difference in the formation of the amorphous carbon film, but the difference occurs due to the chamber 110. That is, since the chamber 110 itself is in a state of being grounded, a difference occurs.

1, a capacitor is constituted by a showerhead 300 corresponding to an anode, a substrate support 210 corresponding to a cathode, and a chamber 110 (see FIG. 3). Accordingly, when a potential difference is generated between the positive electrode and the negative electrode, the same amount (for example, eight) of mutually opposite charges is induced in the positive electrode and the negative electrode, An amount (for example, four) of charges is induced.

On the other hand, in the case of FIG. 2, a capacitor is formed which acts as an anode having the same potential as that of the chamber 110 and the showerhead 300, and a substrate support 210 having a lower potential than that of the showerhead 300 acts as a cathode Reference). Therefore, when the same potential difference as in Fig. 1 is generated in the positive electrode and the negative electrode, the same amount (for example, eight) of mutually opposite charges is induced in the positive electrode and the negative electrode, (For example, eight). Therefore, since a large amount of charge is induced in the substrate supporting part 210 as compared with the showerhead 300, positive ions in the reaction space between the showerhead 300 and the substrate supporting part 210 are attracted to the substrate supporting part 210 ).

5 is a flowchart illustrating a method of forming an amorphous carbon film according to an exemplary embodiment of the present invention. In the formation of the amorphous carbon film according to the present invention, an amorphous carbon film having two or more different properties is formed. When the amorphous carbon film is formed using the conventional plasma processing apparatus shown in FIG. 1, etching resistance is poor. Therefore, when forming an amorphous carbon film using the plasma processing apparatus shown in FIG. 2, such etching resistance may be improved. However, the amorphous carbon film thus formed may be stressed due to an increase in ion energy, which may interfere in a subsequent process. That is, damage can be applied to the pattern already formed in the to-be-processed substrate. Thus, according to an exemplary embodiment of the present invention, a low stress amorphous carbon film is first formed on a substrate to be processed, and then a high etching resistant amorphous carbon film is formed. Hereinafter, an amorphous carbon film forming method according to an exemplary embodiment of the present invention will be described in more detail with reference to FIGS. 2 and 5.

2 and 5, according to the plasma processing method according to an exemplary embodiment of the present invention, first, a plasma having a shower head 300 and a substrate support 210 facing each other in the chamber 110 is provided. The substrate S is loaded into the substrate support 210 of the processing apparatus 200 (step S110). At this time, the distance between the substrate support 210 and the shower head 300 is preferably adjusted to about 2cm or less. When the distance between the substrate support 210 and the shower head 300 is greater than 2 cm, plasma discharge may become unstable or an arc may be generated at a high pressure.

To this end, the driving unit 220 raises the substrate support 210 to adjust the distance between the shower head 300 and the substrate support 210.

Thereafter, a first process raw material gas is injected through the shower head 300 toward the substrate S (step S120). The first process raw material gas is supplied from the raw material supply unit 700, for example, acetylene (C ₂ H ₂ ), or propene (C ₃ H ₆ ) gas may be used, and alternatively trimethylbenzene solution You may heat and use about 340 degree-380 degree. In this case, as the carrier gas, any one or a plurality of gases selected from the group consisting of carbon dioxide gas, helium, argon gas, and hydrogen gas may be used in combination. These gases may be separately supplied to the shower head 300, or may be mixed and supplied. On the other hand, the first process raw material gas may include oxygen (O ₂ ). As a result of the experiment, when the raw material gas contains oxygen (O ₂ ), the stress and etching resistance of the formed amorphous carbon film is lowered. This experimental result will be described in more detail with reference to FIG. 6.

Thereafter, the chamber 110 and the shower head 300 are grounded, and a DC power source for applying a negative potential to the substrate support 210 and an RF power source for generating plasma are applied to the substrate S to be processed. A first amorphous carbon film is formed in step S130. In this case, the DC power may be performed through the DC power supply 400, and the RF power may be performed through the RF power supply 600.

In this case, the RF power may supply about 300W to about 1600W, and the DC voltage may supply -1400V to -100V. On the other hand, in the step of forming an amorphous carbon film on the substrate to be treated, the DC power may be applied by pulsed. In this case, the frequency of the pulsed DC power supply can be adjusted to be 20kHz to 200kHz, the duty ratio of the pulsed DC power supply (duty ratio) may have a range of 10% to 50%.

Preferably, in the process of forming the first amorphous carbon film on the substrate to be processed, when the pressure in the chamber is less than 4 torr, a DC voltage of -1400 V to -100 V is applied to the substrate support, and the pressure in the chamber When 4 torr to 7.5 torr, a DC voltage of -800 V to -400 V may be applied to the substrate support.

In addition, when the separation distance of the shower head and the substrate support is 0.5cm, the frequency is applied to the pulsed DC power in the range of 20kHz to 200kHz, the separation distance of the showerhead and the substrate support is greater than 0.5cm and less than 1cm In this case, a pulsed DC power supply having a frequency in the range of 20 kHz to 100 kHz may be applied.

The first amorphous carbon film formed as described above may reduce stress and damage to the patterns formed on the substrate.

Meanwhile, in the present embodiment, after the first process raw material gas is injected (step S120), the chamber 110 and the shower head 300 are grounded to form the first amorphous carbon film (step S130). However, it will be apparent to those skilled in the art that the ground of the chamber 100 and the shower head 300 may be grounded before the process raw material gas is injected. In addition, the application of the DC voltage and the RF power may be performed simultaneously with or before the injection of the first process gas.

Thereafter, a second process raw material gas is injected toward the processing target substrate S through the shower head 300 (step S140). The second process source gas is substantially the same as the first process source gas except that it does not contain oxygen (O ₂ ) or contains less oxygen (O ₂ ) than the first process source gas.

Next, a second amorphous carbon film is formed (step S150). Since the second amorphous carbon film is substantially the same as the process of forming the first amorphous carbon film (step S130), overlapping description thereof will be omitted. As described above, the second amorphous carbon film formed by using the second process raw material gas containing no oxygen (O ₂ ) can achieve high etching resistance and sufficiently achieve a function as a mask.

Although not shown, a third process raw material gas may be injected to form a third amorphous carbon film. The third process raw material gas may not include oxygen (O ₂ ) or may contain a smaller amount of oxygen (O ₂ ) than the second process raw material gas. Thus, the generated third amorphous carbon film has higher stress than the second amorphous carbon film but may have improved etching resistance.

As described above, when the amorphous carbon film having a low stress is formed on the surface close to the substrate to be processed, and an amorphous silicon layer having a high etching resistance is gradually formed, a function as a mask can be achieved, and in a subsequent process, the amorphous carbon film having a high stress can be formed. Problems that may be caused by this can be solved at the same time.

On the other hand, while the above described an example of forming a multi-layered amorphous carbon film by different from the first process gas and the second process gas, the first process gas and the second process gas is the same, DC power or RF power You can control the stress and etch resistance by adjusting. The relationship between the applied DC power supply and stress will be described with reference to FIG. 12, and the relationship between RF power and stress will be described later with reference to FIG. 13.

6 is a graph showing the relationship between the amount of oxygen (O ₂ ) contained in the injected process raw material gas and stress. As experimental conditions, acetylene (C ₂ H ₂ ) was fixed at 60sccm, argon (Ar) at 420sccm, helium at 100sccm, RF frequency is 13.56MHz, RF power is 800W, DC voltage is -850V, DC The pulse was fixed at 20 kHz, and the stress was measured after forming an amorphous carbon film while varying the amount of oxygen to 0 sccm, 10 sccm, 20 sccm, 30 sccm, 60 sccm, 120 sccm.

As shown in FIG. 6, when the oxygen amount is 0 sccm, the stress is 427 (-Mpa), when the oxygen amount is 10 sccm, the stress is 367 (-Mpa), and when the oxygen amount is 20 sccm, the stress is 354 (-Mpa). When the amount of oxygen is 30 sccm, the stress is 281 (-Mpa), when the amount of oxygen is 60 sccm, the stress is 270 (-Mpa), and when the amount of oxygen is 120 sccm, the stress is measured as 173 (-Mpa).

From these experimental results, it can be seen that the stress decreases as the amount of oxygen injected into the process raw material gas increases.

7 is a graph showing a change in stress depending on the thicknesses of the first amorphous carbon film and the second amorphous carbon film. FIG. 8 is a cross-sectional view schematically showing an amorphous carbon film corresponding to the first case shown in FIG. 7 (only formed with the second amorphous carbon film), and FIG. 9 is a second case (second amorphous) shown in FIG. 7. FIG. 10 is a cross-sectional view schematically illustrating an amorphous carbon film corresponding to a thickness of a carbon film and a thickness of the first amorphous carbon film, and FIG. 10 is a third cross-sectional view of FIG. 1 is a cross-sectional view schematically showing an amorphous carbon film corresponding to one formed thinner than an amorphous carbon film, and FIG. 11 is a fourth case illustrated in FIG. 7 (a second amorphous carbon film formed thicker than the first amorphous carbon film). A cross-sectional view schematically showing an amorphous carbon film corresponding to).

The thicknesses of the amorphous carbon films shown in FIGS. 8 to 11 are all equal to 5000 kPa, and FIG. 8 shows an amorphous carbon film 612 formed to a thickness of 5000 kPa without injecting oxygen, and FIG. 9 injects 120 sccm of oxygen. After the amorphous carbon film 611 is formed to be 2500 m thick, the amorphous carbon film 612 formed to be 2500 m thick without oxygen injection is shown. FIG. 10 shows an amorphous carbon film 612 formed at 1000 mm thick without oxygen injection after forming an amorphous carbon film 611 at 4000 mm thick by injecting 120 cm cm of oxygen, and FIG. An amorphous carbon film 611 formed to a thickness of is shown.

As a result of the stress measurement, the stress of the amorphous carbon film of FIG. 8 is 270 (-Mpa), the stress of the amorphous carbon film of FIG. 9 is 171 (-Mpa), the stress of the amorphous carbon film of FIG. 10 is 101 (-Mpa), and the amorphous of FIG. The carbon film stress was measured to be 77 (-Mpa). As such, the thickness of the first amorphous carbon film and the second amorphous carbon film may be adjusted to form an amorphous carbon film suitable for the required stress and etching resistance.

12 is a graph showing a relationship between applied DC power and stress.

As experimental conditions, acetylene (C ₂ H ₂ ) was fixed at 60sccm, argon (Ar) at 357sccm, helium at 85sccm, applied RF power was fixed at 600W, oxygen amount at 120sccm, applied DC voltage was 0V,- After varying to 600V, -900V and -1200V to form an amorphous carbon film, the stress was measured.

As shown in FIG. 12, when the DC voltage is 0V, the stress is 42 (-Mpa), when the DC voltage is -600V, the stress is 71 (-Mpa), and when the DC voltage is -900V, the stress is 129 ( -Mpa) and the stress was measured at 162 (-Mpa) when the DC voltage was -1200V.

It can be seen from the experimental results that the stress increases as the power of the DC applied increases (that is, the etching resistance is improved). Therefore, the same result can be predicted not only by the absolute value of DC power but also by increasing the frequency. Therefore, when a strong DC power is applied after the initial stage of the formation of the amorphous silicon film, an amorphous carbon film having a low stress can be formed at the bottom, and an amorphous carbon film having a strong etching resistance can be formed at the top.

13 is a graph showing the relationship between the applied RF power and stress.

As experimental conditions, acetylene (C ₂ H ₂ ) was fixed at 60sccm, argon (Ar) at 420sccm, helium at 100sccm, DC voltage was fixed at -850V, oxygen was fixed at 120sccm, RF power was applied at 800W, 600W After the amorphous carbon film was formed while changing to 400W, the stress was measured.

As shown in FIG. 6, when the DC voltage is 0V, the stress is 42 (-Mpa), when the DC voltage is -600V, the stress is 71 (-Mpa), and when the DC voltage is -900V, the stress is 129 ( -Mpa) and the stress was measured at 162 (-Mpa) when the DC voltage was -1200V.

It can be seen from the experimental results that the stress increases as the RF power applied increases. Therefore, when a strong RF power is applied after the initial stage of the formation of the amorphous silicon film, an amorphous carbon film having a low stress can be formed on the lower side, and an amorphous carbon film having a strong etching resistance can be formed on the upper side.

14 is a flowchart illustrating a method of forming an amorphous carbon film according to another exemplary embodiment of the present invention.

Referring to FIG. 14, according to the amorphous carbon film forming method according to another exemplary embodiment of the present invention, first, a substrate to be processed is loaded (step S210), and a process raw material gas is injected while reducing the amount of oxygen (step S220). Then, an amorphous carbon film is formed (step S230). At this time, the amount of oxygen (O ₂ ) contained in the process raw material gas may be reduced step by step, alternatively, the amount of oxygen (O ₂ ) contained in the process raw material gas may be continuously reduced. Details of each step are substantially the same as the embodiment of FIG. 5 described above, and thus redundant descriptions are omitted.

According to the amorphous carbon film forming method according to the present invention, the amorphous carbon film may be composed of at least two layers of an amorphous carbon film having a high etching resistance and an amorphous carbon film having a low stress, thereby achieving a function as a mask, and in a subsequent process, Problems that may be caused by the amorphous carbon film of stress can be solved at the same time.

While the present invention has been described in connection with what is presently considered to be practical and exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.

100, 200: plasma processing apparatus 110: chamber
200: substrate holding unit 210:
220: driving part 221: shaft
222: power section 300: shower head
400: DC power supply 500: Filter
600: RF power supply S: substrate to be processed

Claims (9)

Loading a substrate to be processed on top of the substrate support of the plasma processing apparatus having a shower head and a substrate support facing each other in the chamber;
Injecting a first process raw material gas through the shower head toward the substrate to be processed;
Grounding the chamber and the shower head and applying a first DC power source for applying a negative potential to the substrate support and a first RF power source for generating a plasma to form a first amorphous carbon film on the substrate to be processed;
Spraying a second process raw material gas through the shower head toward the substrate to be processed; And
A second DC power source for grounding the chamber and the shower head, a second DC power source for applying a negative potential to the substrate support, and a second RF power source for generating a plasma are applied on the substrate to be treated, and have different properties from those of the first amorphous carbon film. Forming a second amorphous carbon film of the;
Method for forming an amorphous carbon film comprising a. The method of claim 1,
The first amorphous carbon film has a lower stress than the second amorphous carbon film,
And the second amorphous carbon film has a higher etching resistance than the first amorphous carbon film. The method of claim 1,
And the first process raw material gas further contains oxygen (O ₂ ) or contains a greater amount of oxygen (O ₂ ) than the second process raw material gas. The method of claim 1,
The power of the second DC power supply is higher than the power of the first DC power supply. The method of claim 1,
Wherein the first DC power supply and the second DC power supply are pulsed DC power supplies, and the second DC power supply is higher frequency than the first DC power supply. The method of claim 1,
And the second RF power supply has a higher power than the first RF power supply. Loading a substrate to be processed into the substrate support of the plasma processing apparatus having a shower head and a substrate support facing each other in a chamber;
Injecting process gas through the shower head toward the substrate; And
Grounding the chamber and the shower head, applying a DC power source for applying a negative potential to the substrate support, and an RF power source for generating a plasma to form an amorphous carbon film on the substrate to be processed;
And forming the amorphous carbon film while reducing the amount of oxygen (O ₂ ) contained in the process raw material gas. The method of claim 7, wherein
The method of forming an amorphous carbon film, characterized in that the amount of oxygen (O ₂ ) contained in the process raw material gas is reduced in stages. The method of claim 7, wherein
A method of forming an amorphous carbon film, characterized in that the amount of oxygen (O ₂ ) contained in the process raw material gas is continuously reduced.

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