KR101257569B1 - Manufacturing apparatus of semiconductor equipment - Google Patents

Abstract

The apparatus for manufacturing a semiconductor device includes a coating head for discharging the adhesive toward a coating object with a plurality of droplets, a stage on which the coating object is disposed and capable of moving the lower side of the coating head, and a cleaning part for cleaning the discharge surface of the coating head. And a first moving drive unit for moving the cleaning unit to a work position for cleaning the discharge surface of the application head and to a retracted position set below the moving area of the stage and avoiding interference with the stage.

Description

Manufacturing apparatus of semiconductor device {MANUFACTURING APPARATUS OF SEMICONDUCTOR EQUIPMENT}

The present invention relates to an apparatus for manufacturing a semiconductor device.

Usually, in the manufacturing process of a semiconductor device, a semiconductor wafer is mounted on a dicing tape via an adhesive sheet (also called a DAF material), and the mounted semiconductor wafer is separated into pieces by blade dicing, and a plurality of Semiconductor chips are manufactured (see Patent Document 1).

When the semiconductor wafer is mounted on the dicing tape, first, the back surface of the element formation surface of the semiconductor wafer is ground, the adhesive sheet is adhered to the ground back surface, and the semiconductor wafer is mounted on the dicing tape via the bonded adhesive sheet. do. In addition, after dicing, UV irradiation is performed with respect to a dicing tape from the back surface side of a semiconductor wafer, and the adhesive force of a dicing tape with respect to an adhesive sheet falls for the pick-up of the subsequent process of removing a semiconductor chip from a dicing tape. do.

In addition, Patent Literature 1 proposes a technique of manufacturing a high quality semiconductor device at a lower cost by applying an adhesive directly to the back surface of an element formation surface of a semiconductor wafer instead of such an adhesive sheet to form a coating film of the adhesive.

Patent Document 1: Japanese Patent Application Laid-Open No. 2008-270282 (JP 2008-270282 A)

However, patent document 1 does not disclose the specific structure of the apparatus which apply | coats an adhesive agent directly to the back surface of the element formation surface of a semiconductor wafer.

This invention is made | formed in view of the above, and an object of this invention is to provide the manufacturing apparatus of the semiconductor device which can form the coating film of an adhesive agent in an application object to a desired film thickness.

The apparatus for manufacturing a semiconductor device according to the first aspect of the present invention includes a coating head for discharging an adhesive toward a coating object with a plurality of droplets, a stage on which the coating object is disposed and which can move the lower side of the coating head, A cleaning part for cleaning the discharge surface, a cleaning position, a work position for cleaning the discharge surface of the coating head, and a first moving drive part for moving to a retracted position set below the moving area of the stage and avoiding interference with the stage. do.

According to the present invention, a coating film of an adhesive agent can be formed on a coating object to a desired film thickness.

BRIEF DESCRIPTION OF THE DRAWINGS It is a top view which shows schematic structure of the manufacturing apparatus of the semiconductor device which concerns on one Embodiment of this invention.
It is a schematic diagram which shows the accommodating part with which the manufacturing apparatus of FIG. 1 is equipped.
3 is a plan view illustrating a supporting plate provided in the accommodation unit of FIG. 2.
It is a top view which shows the hand of the conveyance part with which the manufacturing apparatus of FIG. 1 is equipped.
5 is a cross-sectional view taken along a line A1-A1 of FIG. 4.
FIG. 6 is an explanatory diagram for explaining an operation in which the hand of FIG. 4 extracts a wafer from a container.
It is a schematic diagram which shows the alignment part and drying part with which the manufacturing apparatus of FIG. 1 is equipped.
FIG. 8 is a plan view illustrating a centering unit provided in the alignment unit of FIG. 7.
FIG. 9 is a plan view illustrating a prealignment unit included in the alignment unit of FIG. 7.
It is explanatory drawing for demonstrating the position alignment using the wafer which is not temporarily diced, and its notch.
It is explanatory drawing for demonstrating the position alignment using the wafer currently temporarily diced and its notch.
It is a schematic diagram which shows the irradiation part with which the manufacturing apparatus of FIG. 1 is equipped.
It is explanatory drawing for demonstrating the relationship of the use time and illumination intensity of the UV lamp with which the irradiation part of FIG. 12 is equipped.
It is a schematic diagram which shows the stage of the coating part with which the manufacturing apparatus of FIG. 1 is equipped.
FIG. 15 is a plan view illustrating a position of a lift pin included in the stage of FIG. 14.
It is a top view which shows the position of the suction hole with which the stage of FIG. 14 is equipped.
It is a schematic diagram which shows the discharge confirmation part which comprises the discharge stabilizer of the application part with which the manufacturing apparatus of FIG. 1 is equipped.
18 is a plan view illustrating the discharge confirmation unit of FIG. 17.
It is a schematic diagram which shows the cleaning wet part which comprises the discharge stabilizer of the application part with which the manufacturing apparatus of FIG. 1 is equipped.
20 is a plan view illustrating the cleaning wet part of FIG. 19.
It is a schematic diagram which shows the discharge amount confirmation part which comprises the discharge stabilizer of the application part with which the manufacturing apparatus of FIG. 1 is equipped.
22 is a plan view illustrating a discharge amount confirming unit of FIG. 21.
It is a schematic diagram which shows the cleaning part of the application part with which the manufacturing apparatus of FIG. 1 is equipped.
24 is a plan view illustrating a heater plate included in the drying unit of FIG. 7.
25 is a flowchart illustrating a flow of a manufacturing process performed by the manufacturing apparatus of FIG. 1.

EMBODIMENT OF THE INVENTION One Embodiment of this invention is described with reference to drawings.

As shown in FIG. 1, the apparatus 1 for manufacturing a semiconductor device according to an embodiment of the present invention includes a plurality of housing portions 2 that accommodate a wafer W as an application target (or a processing target), and a wafer ( The conveyance part 3 which conveys W), the alignment part 4 which pre-aligns, the irradiation part 5 which irradiates an ultraviolet-ray, and the application part 6 which apply | coats an adhesive agent to the surface of the wafer W And a drying unit 7 that performs temporary drying, and a control unit 8 that controls each unit.

Each part is arrange | positioned on the mount 1a of the manufacturing apparatus 1 so that the circumference | surroundings may be centered around the conveyance part 3. That is, as shown in FIG. 1, the conveyance part 3 is arrange | positioned in the center of the left side on the mount 1a, and the accommodating part 2 is arrange | positioned above the conveyance part 3, and the conveyance part 3 The alignment part 4 and the drying part 7 are arrange | positioned at the upper right side of the upper part, the irradiation part 5 is arrange | positioned under the conveyance part 3, and the application part 6 in the lower right side of the conveyance part 3. Is placed. In addition, the adhesive agent apply | coated to the wafer W is provided for joining at the time of mounting the chip | tip which separated the wafer W into pieces. That is, the wafer W is formed by the semiconductor manufacturing apparatus 1, and then, as described in the prior art, the wafer W is cut by dicing and separated into chips for each chip. Then, it extracts for every chip | tip by die bonding etc., and the extracted chip is mounted by the adhesive agent apply | coated directly to the manufacturing apparatus 1 of a semiconductor device via the board | substrate directly or another chip etc ..

Each accommodation part 2 is a wafer cassette for injecting or discharging the wafer W. As shown in FIG. Each housing portion 2 is formed to be detachable with respect to the mount 1a of the manufacturing apparatus 1. Moreover, in embodiment of this invention, two accommodation parts 2 are provided, for example. One side of the accommodating part 2 is used for carrying in the wafer W, and the other side of the accommodating part 2 is used for carrying out the wafer W. As shown in FIG.

As shown in FIGS. 2 and 3, each housing portion 2 includes a plurality of support plates 2a for supporting the wafer W, and a pair of holders 2b for holding the support plates 2a in multiple stages ( 2). The holding body 2b is formed in a plate shape or a columnar shape, for example.

The support plate 2a is formed in the shape of a comb teeth having a plurality of support portions 2a1 (five in this embodiment) for supporting the wafer W, and supports the disposed wafers W from the lower surface thereof. The holding plate 11 (refer FIG. 3) is provided in the support plate 2a. The plate-shaped reinforcement member 12 which reinforces the support part 2a1 is provided in the lower side of the front-end | tip of each support part 2a1 which comprises the comb of the support plate 2a, and intersects in the extending direction of each support part 2a1. The reinforcing member 12 is provided with the some connection support 12a (refer FIG. 2), and supports each front-end | tip of each support part 2a1 via the connection support 12a. These support plates 2a are stacked in multiple stages at predetermined intervals.

Each hold pin 11 is arranged in a circle in accordance with the outer shape of the wafer W, and regulates the movement in the plane direction of the wafer W disposed on the support plate 2a. The holding pin 11 is formed in a tapered shape at the tip. For this reason, even when the center of the wafer W is supplied with respect to the support plate 2a at the position slightly shifted from the center of the arrangement source of the holding pin 11, the wafer W is between the holding pins 11. When descending, the circumferential edge on the side of which the center is shifted is in contact with the taper of the tip of the hold pin 11 and is pressed in the horizontal direction. For this reason, the wafer W is positioned at the center of the arrangement source of the hold pin 11. Thus, the wafer W is arrange | positioned on the original area | region enclosed by each hold pin 11 in the support plate 2a, and the hold pin 11 restricts the movement to planar direction, and is hold | maintained. In addition, in the example of FIG. 3, six hold pins 11 are arrange | positioned circularly.

As shown in FIG. 1, the conveyance part 3 is the hand 3a which can hold | maintain and move the wafer W, and the arm 3b which can support the hand 3a, and can rotate in the expansion | contraction, lifting and lowering plane direction. And an arm moving driver 3c for supporting the arm 3b and moving in the X-axis direction. The conveyance part 3 delivers the wafer W between each accommodation part 2, the alignment part 4, the irradiation part 5, the application part 6, and the drying part 7. .

As shown in FIG. 4, the hand 3a is formed in the comb-tooth shape which has the support part 3a1 of several (this embodiment six) which supports the wafer W, and arrange | positions the wafer W arrange | positioned It supports from the lower surface. In particular, each support part 3a1 enters into the valley part of each support part 2a1 which comprises the comb of the support plate 2a (refer FIG. 3) with which the accommodating part 2 is equipped (henceforth, this state "combines this state." The comb-shaped comb teeth. The wide part 3a2 of the shape according to the external shape of the wafer W arrange | positioned on the hand 3a is formed in the support part 3a1 located in the both ends of the hand 3a. The hand 3a is provided with a plurality of hold pins 21 and a plurality of suction holes 22.

Each hold pin 21 is arranged in a circle in accordance with the outer shape of the wafer W, and regulates the movement in the plane direction of the wafer W disposed on the hand 3a. In more detail, each hold pin 21 is arrange | positioned at intervals along the circumference of the circle (arrangement circle) which has a diameter about several mm larger than the diameter of the wafer W. As shown in FIG. The holding pin 21 is formed in a tapered shape at the tip. For this reason, even when the center of the wafer W is received by the hand 3a at a position slightly shifted from the center of the placement circle of the hold pin 21, the wafer W is held between the hold pins 21. When descending, the circumferential edge portion on the side of which the center is shifted is contacted with the tapered portion of the tip of the hold pin 21 and pressed in the horizontal direction. For this reason, the wafer W is positioned in the arrangement source of the hold pin 21. Thus, the wafer W is arrange | positioned on the original area | region enclosed by each hold pin 21 in the hand 3a, and the movement to planar direction is regulated by the hold pin 21. As shown in FIG. In addition, in the example of FIG. 4, eight hold pins 21 are arrange | positioned circularly.

Each suction hole 22 is provided so that favorable suction of the wafer W with respect to the comb teeth center vicinity of the hand 3a is possible. As shown in FIG. 5, the suction hole 22 communicates with a suction path 23 formed inside the hand 3a. The suction path 23 is connected to suction parts (not shown), such as a suction pump, through piping, such as a tube and a pipe. As a result, the wafer W is held by the suction by the suction holes 22 while the movement in the planar direction is regulated by the hold pins 21. As the adsorption method, for example, a vacuum chuck or a local Bernoulli chuck is used.

As shown in FIG. 1, the arm 3b is configured to be extensible, movable, and horizontally rotatable, and the arm 3b is configured to be movable in the X-axis direction by the arm movement driver 3c. The arm 3b moves in and out of the hand 3a by stretching. The arm 3b is electrically connected to the control part 8, and the drive of the expansion | contraction, raising and lowering, and horizontal rotation is controlled by the control part 8. As shown in FIG.

The arm movement drive part 3c is a movement mechanism which guides and moves the arm 3b to an X-axis direction, and is provided on the mount 1a. The arm movement drive part 3c is electrically connected to the control part 8, and the drive is controlled by the control part 8. As shown in FIG. As the arm movement drive part 3c, the feed screw type drive part which uses a servo motor as a drive source, the linear motor type drive part which uses a linear motor as a drive source, etc. are used, for example.

As shown in FIG. 6, each support part 3a1 which comprises the comb teeth of the hand 3a comprises the comb teeth of the support plate 2a with which the accommodating part 2 was equipped by the extending | stretching operation of the arm 3b. It is inserted in the valley part between each support part 2a1, and is combined with each support part 2a1 of the support plate 2a. Next, the hand 3a moves upward by the operation of the arm 3b and contacts the lower surface of the wafer W disposed on the support plate 2a. At this time, the hand 3a regulates the movement of the wafer W in the planar direction by the respective holding pins 21, and also holds and holds the wafer W by the suction holes 22. Thereafter, the hand 3a moves further upward by the operation of the arm 3b, and after the movement, contracts and moves toward the front side, and extracts the wafer W from the receiving portion 2 and carries it into the apparatus. . Finally, the hand 3a moves in the X-axis direction together with the arm 3b while holding the wafer W, and transfers the wafer W to the alignment portion 4. Also, the export is in the reverse order of the import.

As shown in FIG. 7, the alignment portion 4 is a centering portion that performs alignment in the plane direction (XY direction) between the hand 3a of the transfer unit 3 and the wafer W on the hand 3a. (4a) and the prealignment part 4b which performs alignment of rotation direction ((theta) direction). The positioning part 4 is provided on the upper part of the drying part 7.

As shown in FIGS. 7 and 8, the centering portion 4a includes a plurality of supports 31 that support the wafers W and a plurality of centers that press and center the wafers W supported on the supports 31 in the planar direction. The pressing part 32 is provided. In the embodiment of the present invention, three pressing portions 32 are provided.

The centering portion 4a is a mechanism for fitting the center of the wafer W to the center of the hand 3a (this center coincides with the center of the placement circle of the hold pin 21). The wafer W is positioned by the hold pin 21 with respect to the hand 3a, but the diameter of the circle inscribed in the eight hold pins 21 is larger than the diameter of the wafer W. Loose positioning, including the error of the difference. Therefore, the centering part 4a performs positioning with higher precision than the holding pin 21. The center of the hand 3a is a position which becomes a reference position (reference position of application) in a subsequent process. For this reason, it is necessary to precisely align the center of the wafer W with the center of the hand 3a. In addition, the centering part 4a mechanically centers so that the edge part of the wafer W and the protective film on the wafer W may not be damaged.

The support 31 has the plurality of comb teeth constituting the comb teeth having a shape in which each support portion 3a1 constituting the comb teeth of the hand 3a enters the valley portion accurately (hereinafter referred to as "combining this state"). In the form, it is provided with five support parts 31a (refer FIG. 8). When it demonstrates in detail, the support 31 is formed with the recessed part in which each support part 3a1 which comprises the comb teeth of the hand 3a enters. And the upper surface of the support stand 31 becomes each support part 31a which supports the wafer W. As shown in FIG. The hand 3a enters between the respective support portions 31a constituting the comb teeth of the support 31, and transfers the wafers W. At this time, the positioning position of the hand 3a with respect to the support 31 is adjusted and set in advance in the position where the center of the wafer W which centered on the support 31 and the center of the hand 3a match. . Therefore, by centering the wafer W on the support 31, the center of the hand 3a and the center of the wafer W can be made to coincide.

Each press part 32 is provided with the lever part 32a which contacts the edge part of the wafer W, and the movement drive part 32b which moves the lever part 32a to a plane direction.

The lever portion 32a is provided with a pin (not shown) projecting downward on the lower side of the front end thereof. The lever portion 32a is moved by the movement driving portion 32b to contact the pin with the wafer W, thereby bringing the wafer W in a planar direction. To squeeze. Therefore, the cutout part (not shown) for allowing the movement of the pin of the lever part 32a is formed in each support part 31a which comprises the comb teeth of the support stand 31. FIG. In addition, the lever part 32a is formed so that a stop position is switchable according to the size (for example, 8 inches and 12 inches) of the wafer W to be centered. The stop position is such that a slight gap is generated between the pin of the lever portion 32a and the outer circumference of the wafer W. As shown in FIG. Thereby, it is possible to prevent damage such as being broken or damaged by being caught by the three lever portions 32a. This gap is sufficiently smaller than the difference between the diameter of the circle inscribed in the hold pin 21 of the hand 3a and the diameter of the wafer W. FIG.

The movement drive part 32b is electrically connected to the control part 8, and the drive is controlled by the control part 8. As shown in FIG. As the moving drive part 32b, a feed screw drive part, an air cylinder, etc. which use a servo motor as a drive source are used, for example. Moreover, embodiment of this invention is an example using the feed screw mechanism. When the feed screw mechanism is used, the feed amount can be easily adjusted in accordance with the rotation amount of the servomotor. For this reason, the stop position of the lever part 32a can be adjusted easily, and the centering position of the wafer W can be adjusted easily.

Thus, the centering part 4a presses the pin of the lever part 32a of each press part 32 on the outer periphery of the wafer W on the support stand 31, and presses each lever part 32a. The wafer W is moved in the planar direction by press-fitting with a pin, and positioning (centering) is performed in which the center of the hand 3a and the center of the wafer W are aligned.

As shown in FIGS. 7 and 9, the prealignment unit 4b includes a holding unit 41 for holding and holding the wafer W on the lower surface thereof, and a rotation driving unit 42 for rotating the holding unit 41 in a plane. ), An imaging unit 43 for imaging the outer circumferential portion of the wafer W held by the holding unit 41 from above, and a moving drive unit for moving the imaging unit 43 in the radial direction of the wafer W ( 44). Here, the outer peripheral part of the wafer W means the area including the edge part in which the notch N mentioned later is formed.

The holding | maintenance part 41 is a disk-shaped stage which has a vacuum suction mechanism, adsorb | sucks and hold | maintains the wafer W on the lower surface, and receives the wafer W from the hand 3a of the conveyance part 3. The planar size of the holding part 41 is formed smaller than the planar size of the wafer W so that the imaging part 43 can image the outer peripheral part of the wafer W. FIG. That is, when the holding part 41 holds the wafer W, the outer peripheral part of the wafer W protrudes from the outer peripheral part (stage outer peripheral part) of the holding part 41, and the outer peripheral part of the wafer W can be picked up. Done. The holding part 41 is formed detachably with respect to the rotation drive part 42, and can be transmitted according to the size of the wafer W. As shown in FIG.

The rotation drive part 42 is a rotation mechanism which supports the holding part 41 and rotates in (theta) direction (refer FIG. 9), and is provided in the upper part of the holding part 41. As shown in FIG. The rotation drive part 42 is electrically connected to the control part 8, and the drive is controlled by the control part 8. As shown in FIG.

The imaging part 43 is provided so that the outer peripheral part of the holding part 41 can be picked up from the upper side. The imaging unit 43 is electrically connected to the control unit 8, and its driving is controlled by the control unit 8. As the imaging unit 43, for example, a CCD camera or the like is used. In the flat plates 45 and 46 positioned below the image capturing unit 43, an opening H serving as a window for image capturing is formed by the image capturing unit 43 so that the outer peripheral portion of the wafer W can be imaged. . The opening H is formed obliquely long in plan view (see FIG. 9), and the imaging section 43 picks up the outer circumferential portion of the wafer W through the opening H. As shown in FIG.

The opening H is long because the position of the imaging section 43 is switched to match the size (8 inches and 12 inches) of the wafer W to be handled. Therefore, the opening H is formed to be long in the moving direction of the imaging section 43 (radial direction of the holding section 41). Further, the opening H is formed at an angle because the notch N of the wafer W is detected and positioned at a position inclined by a predetermined angle with respect to the advancing direction of the hand 3a of the transfer section 3. to be. That is, the hand 3a advances and retreats from the inclination direction (arrow A2 of FIG. 1) with respect to the X direction which is the moving direction of the stage 6a (to be described later) of the application portion 6. When the wafer W is transferred from the hand 3a to the stage 6a, the wafer W is directed so that the notch N of the wafer W faces the moving direction (the X direction) of the stage 6a. Needs to be positioned at an angle tilted in the rotational direction with respect to the hand 3a. Therefore, the advancing direction (the arrow A1 of FIGS. 1 and 9) of the hand 3a with respect to the prealignment part 4b, and the rotation center of the holding | maintenance part 41 and the viewing center of the imaging part 43 are connected. Angle (DELTA) (theta) 1 which a straight line makes | forms is the advancing direction (the arrow A2 of FIG. 1) of the hand 3a with respect to the stage 6a of the coating part 6, and the moving direction (X-axis direction) of the stage 6a. This angle is set to be equal to the angle Δθ2. And the notch N of the wafer W is inclined and positioned with the angle (DELTA) (theta) 1 = (DELTA) (theta) 2 with respect to the hand 3a.

The movement drive part 44 is a movement mechanism which moves the imaging part 43 to the imaging position which can image the outer peripheral part of the wafer W by the imaging part 43 according to the size of the wafer W. As shown in FIG. The movement drive part 44 is electrically connected to the control part 8, and the drive is controlled by the control part 8. As shown in FIG. At this time, for example, in the case of an 8-inch wafer W having a small size, it is moved to the inner side close to the rotation center of the holding unit 41, and in the case of a 12-inch wafer W having a large size, the holding unit 41 is used. Is moved outward from the center of rotation. As the moving drive part 44, a feed screw drive part, an air cylinder, etc. which use a servo motor as a drive source are used, for example.

Thus, the prealignment part 4b adsorb | sucks and hold | maintains the wafer W on the lower surface of the holding part 41, and also moves the imaging part 43 to the imaging position by the movement drive part 44. As shown in FIG. Then, the prealignment part 4b rotates through the opening H of the flat plates 45 and 46 by the imaging part 43, rotating the holding | maintenance part 41 by the rotation drive part 42. FIG. The outer peripheral part of the wafer W is imaged. More specifically, the rotation drive part 42 rotates the holding part 41 at a set rotation speed. During the rotation operation of the holding unit 41, the imaging unit 43 picks up an image of the outer circumferential portion of the wafer W at an imaging timing determined based on the control of the control unit 8. The imaging timing is set at a timing at which the image picked up by the imaging section 43 overlaps with a portion of the image to be picked up next. For example, when the imaging section 43 has a size of an imaging field that can image a circular arc (outer peripheral portion) of 20 degrees at the outer periphery of the wafer W at one time, each time the holding section 41 rotates 15 degrees. It is a state to image. In addition, the holding unit 41 may be temporarily stopped in accordance with the timing of the imaging by the image capturing unit 43, or the image holding unit 41 may be imaged at a set timing (for example, at every 15 ° rotation) while the holding unit 41 is continuously rotated. Also good.

On the surface of the wafer W, a plurality of chips (semiconductor elements) are arranged in a lattice shape, and this surface becomes an element formation surface. A protective tape is adhered to the element formation surface. On the other hand, the back surface of the wafer W is polished by grindstone etc., and this surface becomes a coating surface to which an adhesive agent is apply | coated.

10 and 11 show the back surface (coating surface) of the wafer W. As shown in FIG. 10 shows a wafer which is not temporarily diced (hereinafter referred to as a wafer of undicing). 11 shows a wafer that has been temporarily diced (hereinafter referred to as a wafer of dicing fill). Here, temporary dicing is cutting to a predetermined depth. The wafer of the temporary dicing fill is completely cut and separated in a subsequent process. In Fig. 11, lattice-shaped dicing grooves are formed on the back surface (coating surface) of the wafer by temporary dicing.

Thus, in the wafer W, as shown in FIG. 10, the notch N for alignment is provided in the outer edge of the wafer W normally. By the way, the damage K which occurred in the conveyance process etc. besides the notch N may exist in the outer edge of the wafer W. If the damage K is recognized as the notch N, the alignment cannot be performed correctly.

Therefore, the prealignment unit 4b performs image processing on the picked-up image, and compares the image of the picked-up damaged part with the image of the reference notch previously registered as a reference. That is, the prealignment part 4b performs pattern matching of the image of the damaged part image | photographed and the image of a reference notch, and judges whether the imaged damaged part is the notch N. As shown in FIG. And when the damaged part which image | photographed coincides with the reference | standard notch, it is judged that the damaged part is notch (N). In addition, when a damaged part does not match a reference | standard notch, it is judged that the damaged part is damage K. FIG. Thereby, misrecognition which recognizes the damage K of the wafer W as notch N can be prevented.

In detail, the prealignment part 4b is provided with the image processing calculation part which is not shown in figure, and is performed by the image processing calculation part every time the imaging part 43 picks up the image of the outer periphery part of the wafer W. As shown in FIG. In the picked-up image, it is determined whether or not a pattern that matches the reference notch stored in advance exists. And when there exists a pattern which matches the reference notch previously stored, the pre-alignment part 4b has the position (notch N) of the pattern (notch N) in the outer peripheral part of the wafer W. As shown in FIG. The position shift of the rotation direction (theta direction) with respect to the position which should be present is calculated. For example, when setting the center of the imaging visual field of the imaging part 43 to the position which should have the notch N, the pre-alignment part 4b is the center of the imaging visual field of the notch N in a captured image (photographic image). Position shift of the notch N with respect to the imaging visual field center is computed from the position shift of the X and Y direction with respect to the center position of ()), and the radius of the wafer W.

In addition, although image processing is performed every time the imaging by the imaging part 43 is performed, after the imaging part 43 completes imaging of the image of the outer periphery part of the wafer W, image processing is performed with respect to all the imaging images. May be performed. However, when the image processing is performed every time the imaging of the imaging unit 43 is performed, subsequent imaging can be stopped at the time when the notch N is detected, which is efficient. In addition, although the image processing operation part was supposed to be provided in the prealignment part 4b, the control part 8 may double as the function.

In this way, the notch N is recognized, and the correction amount in the θ direction is calculated from the position of the notch N and the radius of the wafer W, and the position in the θ direction of the wafer W is based on the calculated correction amount. Is corrected. In addition, the position correction is performed by the rotation drive part 42 based on the control of the control part 8, when the wafer W is transferred from the holding part 41 to the hand 3a of the conveyance part 3. That is, the control part 8 drives the rotation drive part 42 with the computed correction amount, centers the notch N position of the wafer W on the visual field center of the imaging part 43, and in this state, the wafer W Is transmitted to the hand 3a of the transfer section 3. As a result, when the wafer W is transferred from the hand 3a of the transfer section 3 to the stage 6a of the application section 6, which will be described later, the notch N of the wafer W reaches the stage 6a. It faces the movement direction (X-axis direction).

In addition, in the case of the wafer W of undicing, it is necessary to position the wafer W relative to the stage 6a at a predetermined position, that is, at a position where the notch N faces the moving direction of the stage 6a. There may not be. For example, in the case where the adhesive film is formed in a circular shape only in the region inside the formation region of the notch N in the wafer W, the notch N does not necessarily need to be directed in the moving direction of the stage 6a. In such a case, whether the wafer W supplied from the housing section 2 to the storage section (for example, the storage section included in the control section 8) is the wafer W of undicing or the wafer W of dicing fill. Information or information on whether or not pre-alignment is necessary. Based on the stored information, the control unit 8 determines the necessity and unnecessary execution of the prealignment by the prealignment unit 4b, and executes the prealignment only when it is determined that the execution is necessary. good. Also, even in the case of the wafer W for undicing, when the adhesive film is formed in the circular shape except the notch N to the formation region of the notch N, information indicating that prealignment is required is stored. It is good to perform prealignment.

As shown in FIG. 12, the irradiation unit 5 includes a UV lamp 5a for generating UV (ultraviolet rays), a lamp movement driving unit 5b for moving the UV lamp 5a in the Z-axis direction, and an amount of UV light ( Sensor 5c as a detector for detecting the amount of ultraviolet light). The irradiation part 5 is provided inside the box-shaped UV housing (not shown) provided with the carrying-in / out port of the wafer W. As shown in FIG. The inside of the UV housing is an atmosphere of static pressure of a gas such as nitrogen or oxygen.

The lamp movement driving unit 5b moves the UV lamp 5a in the Z-axis direction (the direction in which the wafer is separated from the wafer W), so as to separate the gap (gap) between the wafer W and the UV lamp 5a. It is a moving mechanism for adjusting. As the lamp movement driver 5b, for example, a feed screw driver that uses a servo motor as a drive source is used.

Thus, the irradiation part 5 irradiates UV to the back surface (coating surface to which adhesive agent is apply | coated) of the wafer W, and performs the surface modification. Thereby, an adhesive agent adheres stably to the application | coating surface of the wafer W, and it becomes possible to improve the adhesiveness of the application | coating surface of the wafer W and an adhesive agent.

In order to secure a fixed amount of accumulated light necessary for surface modification, the wafer W supported by the hand 3a of the transfer section 3 is the first lamp UV lamp 5a by the operation of the arm 3b. Reciprocate relative to). Thereby, it becomes possible to obtain the accumulated light amount equivalent to irradiation when the wafer W is passed in one direction with respect to the UV lamps 5a such as two lamps arranged in parallel.

It is known that UV irradiated from the UV lamp 5a decays with time, as shown in FIG. For this reason, in order to stably express the favorable adhesiveness with an adhesive agent on the coating surface (back surface) of the wafer W, it is necessary to make constant the amount of UV light irradiated to the wafer W to a fixed quantity.

Therefore, the irradiation part 5 adjusts various conditions so that UV light amount may become fixed by fixed amount according to the amount of UV light detected by the sensor 5c. For example, as shown in FIG. 13, when the illumination intensity attenuates by about 70% at the time when the UV lamp 5a reaches 4000 hours of life, the irradiation part 5 adjusts the illumination intensity with respect to the wafer W as illumination intensity which is lamp life. Various conditions are adjusted so that it may be maintained at 70% and the amount of UV light may be constant (adjustment section). That is, when the amount of UV light detected by the sensor 5c corresponds to 100% illuminance, the amount of UV light reaching the wafer W by raising the UV lamp 5a by the lamp movement driving unit 5b to 70% illuminance Adjust to. When the amount of light detected by the sensor 5c is smaller than 100% of illuminance, the lamp movement driver 5b is adjusted so that the gap between the wafer W and the UV lamp 5a is reduced in accordance with the decrease amount. These adjustments are made at the time of investigation (every time) or at regular intervals. Thereby, it is suppressed that the light quantity of UV light irradiated to the wafer W by the irradiation part 5 fluctuates. For this reason, surface modification with respect to the back surface (coating surface) of the wafer W can be reliably and stably performed.

The attenuation amount of UV in the UV lamp 5a tends to be the smallest as the use start time is greatest and close to the lamp life after that. Therefore, the adjustment amount of the gap between the wafer W and the lamp 5a may also be gradually decreased with the passage of time in accordance with the amount of UV attenuation.

Various conditions for the adjustment include the intensity of the UV lamp 5a (the input voltage of the UV lamp 5a) and the irradiation time (wafer W), in addition to the above-described separation distance between the wafer W and the UV lamp 5a. The relative speed of the UV lamp 5a), the supply amount (gas flow rate) of reaction gas, such as nitrogen and oxygen, etc. are mentioned. For example, in the case of the input voltage of the UV lamp 5a, even when the lamp illuminance is greater than 70% before the lamp life, the input voltage is controlled to maintain the illuminance at 70%. Moreover, in the case of irradiation time, the moving speed of the hand 3a by the arm 3b of the conveyance part 3 is reduced in accordance with the decrease of lamp illumination intensity, and the irradiation light quantity per unit area with respect to the coating surface of the wafer W is also reduced. Adjust so that the integrated value of is constant. In addition, in the case of the gas supply amount, since the surface modification effect of the wafer W coated surface by UV is affected by the lamp illuminance and the gas atmosphere concentration around the coated surface, a desired surface modification effect can be obtained when the lamp illuminance is 70%. When the lamp illuminance is higher than 70%, the gas supply amount (gas concentration) is made small according to the difference with 70% lamp illuminance. The distance between the wafer W and the UV lamp 5a may be adjusted by the lifting function of the transfer section 3 instead of the lamp movement driver 5b.

As the irradiation method, in addition, a batch irradiation method, a scanning method, a rotation irradiation method, or the like, which collectively irradiates the entire surface of the wafer W at a fixed position, may be used. In addition, as the structure of the irradiation part 5, the structure which irradiates the wafer W on a roller conveyor, a stage, a proximity pin, a robot arm, etc. may be used.

As shown in FIG. 1, the coating unit 6 includes a stage 6a on which the wafer W is disposed, a stage transfer driver 6b for moving the stage 6a in the X-axis direction, and a stage 6a. A plurality of application heads 6c for discharging and applying an adhesive to the upper wafer W by an inkjet method, a liquid feeding part 6d for supplying an adhesive to each application head 6c, and each application head 6c A discharge stabilizing part 6e for stabilizing the discharge performance of the wafer, and a cleaning part 6f for cleaning the coated surface of the wafer W on the stage 6a. 1, illustration of the support part which supports each application head 6c is abbreviate | omitted.

As shown in FIG. 14, the stage 6a includes a heating stage 51 for heating the disposed wafer W, a rotation drive unit 52 for rotating the heating stage 51 in a plane, and a heating stage ( The movement drive part 53 which moves 51 in the Y-axis direction via the rotation drive part 52 is provided. The stage 6a is provided on the mount 1a via the stage conveyance drive part 6b.

The heating stage 51 is a mounting table on which the wafer W is arranged in a horizontal state, and heats the wafer W in the arranged state. In the heating stage 51, the rod-shaped heater 51a is arranged and built in substantially equal intervals so that it may follow the Y-axis direction. Moreover, the arrangement | positioning space of the heater 51a located in the edge part (both ends) is narrower than the center side. Since the heater 51a does not exist outside the heater 51a located in the edge part, the heat dissipation of the outer peripheral side is large compared with the center side of the heating stage 51, and the temperature of the outer peripheral part is easy to fall. For this reason, the heater 51a located at the end is brought close to the heater 51a on the side as much as the outer circumferential portion tends to radiate heat, thereby preventing the temperature decrease due to heat radiation. The heating of the wafer W by the heating stage 51 is for promoting the drying of the adhesive applied to the application surface of the wafer W. As shown in FIG.

Temperature control of the heating stage 51 is performed by feedback control using a temperature measuring device, such as a resistance thermometer. Since there is a temperature difference between the measured value of the RTD inserted into the heating stage 51 as the temperature measuring instrument and the surface of the heating stage 51, the temperature difference is corrected in advance and the temperature for control is set.

The heating stage 51 is provided with a plurality of rod-shaped lift pins 51b so as to be lifted and lowered. The lift pin 51b is a pin for transferring the wafer W to the hand 3a of the transfer section 3. Each lift pin 51b is erected on the support plate 51c. The support plate 51c is arrange | positioned under the heating stage 51, and is comprised so that it may raise and lower by the air cylinder 51d. As a result, all the lift pins 51b are raised and lowered at the same time. As shown in FIG. 15, each lift pin 51b avoids the placement position of the heater 51a and does not interfere with the hand 3a positioned on the stage 6a for the transfer of the wafer W. FIG. Are arranged to avoid.

As shown in FIG. 16, the heating stage 51 is provided with two or more suction holes 51e. Each suction hole 51e is provided so as to be distributed almost evenly in the holding region of the wafer W while avoiding the arrangement positions of the heater 51a and the lift pin 51b. The suction hole 51e communicates with a suction path (not shown). The suction path is connected to a suction part (not shown) such as a suction pump through a pipe such as a tube or a pipe. The suction path of the suction hole 51e is configured to be switchable in accordance with the size of the wafer W (for example, 8 inches and 12 inches). That is, the suction path which applies a suction force only to the suction hole 51e correspondingly located in the small size wafer W shown in FIG. 16, and both the small size wafer W and the large size wafer W The suction path can be switched to a suction path that exerts a suction force on the corresponding suction holes 51e.

In order to reduce the temperature nonuniformity of the heating stage 51, the diameter of the lift pin 51b is so good that it is small. In consideration of the lift-up load of the wafer W, for example, by setting the pin diameter to 1.0 mm and the hole diameter to 2.5 mm, temperature unevenness and lift miss can be prevented. In addition, in order to reduce the temperature nonuniformity of the heating stage 51, the hole diameter of the adsorption hole 51e is so good that it is small. For example, by making the hole diameter 0.6 mm, temperature nonuniformity and adsorption miss can be prevented. Moreover, in order to prevent the crack resulting from the deformation of the wafer W by adsorption | suction, it is preferable that the hole diameter of the suction hole 51e shall be 0.6 mm or less. In addition, although the diameter of the lift pin 51b is smaller than 1.0 mm, it is considered that the effect of suppressing the temperature nonuniformity is increased. However, when the diameter of the lift pin 51b is smaller than 1.0 mm, the weight of the wafer W and the lift pin are reduced. What is necessary is just to make it small from the relationship with the number of 51b in the range which does not cause an obstacle to raise and lower the wafer W. As shown in FIG. The smaller the pore diameter of the adsorption hole 51e is, the higher the effect of preventing temperature unevenness is, but the adsorption force is lowered. For this reason, what is necessary is just to make it small in the range which does not interfere with the adsorption | suction of the wafer W from the relationship between the adsorption force of each adsorption hole 51e, and the number of adsorption holes 51e.

As shown in FIG. 14, the rotation drive part 52 is a rotation mechanism which supports the heating stage 51 and rotates in (theta) direction. The rotation drive part 52 is electrically connected to the control part 8, and the drive is controlled by the control part 8. As shown in FIG.

The movement drive part 53 is a movement mechanism which supports the rotation drive part 52 and moves it to a Y-axis direction. The movement drive part 53 is electrically connected to the control part 8, and the drive is controlled by the control part 8. As shown in FIG. As the moving drive unit 53, for example, a feed screw drive unit using a servo motor as a drive source, a linear motor type drive unit using a linear motor as a drive source, and the like are used.

As shown in FIG. 1, the stage conveyance drive part 6b supports the frame 61 which is long in the Y-axis direction which supports the stage 6a, and one end of the frame 61, and supports the frame 61 in the X-axis direction. And a guide portion 63 for supporting the other end of the frame 61 to be movable in the X-axis direction.

The stage conveyance drive part 6b is a moving mechanism which guides and moves the stage 6a to an X-axis direction, and is provided on the mount 1a. The movement drive part 62 is electrically connected to the control part 8, and the drive is controlled by the control part 8. As shown in FIG. As the movement driver 62, for example, a feed screw drive unit using a servo motor as a drive source, a linear motor type drive unit using a linear motor as a drive source, and the like are used.

An imaging unit 65 such as a camera is located above the standby position that is the position of the stage 6a that transfers the wafer W between the hand 3a of the transfer unit 3 in the stage transfer drive unit 6b. ) Is provided. The imaging section 65 is supported to be movable in the Y-axis direction by the Y-axis direction drive section 66 with the imaging direction downward in the vertical direction. The Y-axis direction drive part 66 is supported on the mount stand 1a by the support member which is not shown in figure. The imaging unit 65 is provided with respect to a straight line passing through the center of the notch N and the wafer W at the circumferential edge of the wafer W when the dicing fill wafer W is disposed on the stage 6a. An image including the corner portions C (see FIG. 11) of two chips at symmetrical positions is picked up. At this time, the imaging section 65 is moved from the imaging position of each part C of one chip to the imaging position of each part C of the other chip by the Y-axis direction drive part 66.

The storage section of the control section 8 indicates the necessity and unnecessaryness of position detection such as information on whether the wafer W accommodated in the accommodation section 2 is the wafer W of undicing or the wafer W of dicing. The information is stored in advance. Then, based on the stored information, it is determined whether to perform position detection using the imaging unit 65 for the wafer W placed on the stage 6a, and when position detection is necessary (for example, dicing fill) In the case of the wafer W).

The wafer W to be supplied is a wafer W of undicing, and the coating portion 6 is a wafer W such that the adhesive film is formed in a circular shape except the notch N to the formation region of the notch N. In the case where the application of the adhesive by the present invention can be satisfactorily performed with the positioning accuracy by the centering portion 4a and the prealignment portion 4b, the information indicating the need for prealignment and the position using the imaging portion 65 It is good to store the information that it is unnecessary to detect, to perform prealignment, and to control so that a position detection may not be performed.

Each coating head 6c is a discharge head which discharges liquid adhesive by a plurality of droplets toward the wafer W arrange | positioned at the stage 6a by the inkjet method. In addition, in embodiment of this invention, seven application heads 6c are provided, for example. The coating heads 6c are arranged in two rows in the Y-axis direction, are arranged in a zigzag shape, and are provided so that the droplets of the adhesive can be discharged onto the wafer W on the moving stage 6a. Each coating head 6c is electrically connected to the control part 8, and the drive is controlled by the control part 8. As shown in FIG.

The coating head 6c includes a plurality of discharge holes (orifices) for discharging droplets, and incorporates a plurality of piezoelectric elements corresponding to each discharge hole. The coating head 6c discharges the droplets from the respective discharge holes in accordance with the application of the driving voltage to the piezoelectric elements by the controller 8. Each discharge hole is arranged in one row or two rows in a straight line at a predetermined pitch (interval), and is formed in the discharge surface (orifice surface) of the coating head 6c. The nozzles of the seven application heads 6c are equal pitch as a whole when viewed from the X-axis direction, and are disposed over the entire length of the Y-axis direction of the stage 6a.

Each coating head 6c is supported by the support part 64 (refer FIG. 17 and 18) so that an adhesive agent may be discharged toward the wafer W on the moving stage 6a. As shown to FIG. 17 and 18, the support part 64 contains the holding member 64a which hold | maintains each application head 6c in a built-in, the pair of support plates 64b which hold | maintain the holding member 64a, and hold | maintain. The frame 64c which supports the pair of support plates 64b with the member 64a as the center, and the pair of door 64d which supports the frame 64c are provided.

The holding member 64a is formed long in the Y-axis direction, and exposes the discharge surface of the coating head 6c, and holds each coating head 6c in a built-in manner. The pair of support plates 64b support the holding member 64a from both sides in the Y-axis direction. The frame 64c is elongated in the Y-axis direction, positioned so as to span the moving stage 6a and the stage conveyance drive part 6b, and is provided on the mount 1a by a pair of doors 64d. . The door 64d is formed in the shape of a long door in the X-axis direction, the girders thereof are parallel to the X-axis direction, and the leg portions thereof are fixed to the upper surface of the mount 1a.

In the embodiment of the present invention, the pair of door 64d is fixed to the mount 1a to restrict the movement of the respective application heads 6c in the X-axis direction, but the present invention is not limited thereto. The door 64d may be movable in the X-axis direction, and the respective coating heads 6c may be moved in the X-axis direction.

As shown in FIG. 1, the liquid supply part 6d supplies the pressurizing tank 71 which accommodates a liquid adhesive, and the supply tank 72 which supplies an adhesive to each application | coating head 6c through piping, such as a tube and a pipe. ) And a waste liquid tank 73 containing waste liquid. The liquid feeding part 6d is electrically connected to the control part 8, and its driving is controlled by the control part 8. The liquid level of the liquid adhesive stored in the supply tank 72 is controlled to substantially match the discharge surface of the application head 6c. Then, when the liquid level reaches a height requiring replenishment, the pressure-sensitive adhesive is supplied from the pressure tank 71 so as to make up for the shortage.

As shown in FIG. 1, the discharge stabilizer 6e cleans the discharge confirmation part 81 which performs discharge confirmation with respect to each application | coating head 6c, and the discharge surface (orifice surface) of each application | coating head 6c. And a wet and dry cleaning portion 82 and a discharge amount confirming portion 83 for checking the total discharge amount of each coating head 6c.

17 and 18, the discharge confirmation unit 81 includes a plurality of imaging units 81a and seven imaging units 81a provided in correspondence with each of the coating heads 6c. ) Is a first elevating drive unit 81b for elevating the retracted position and the imaging position, an illuminating unit 81c for imaging, a receiving unit 81d for receiving droplets discharged from the respective coating heads 6c, and an illuminating unit 81c. ) And a second lift drive unit 81e (see FIG. 17) for lifting the receiver 81d up and down.

One imaging unit 81a is provided for one application head 6c and is arranged in one row in the Y-axis direction. The imaging section 81a is configured to be capable of lifting up and down between a retracted position that does not interfere with the application operation and a working position that is an imaging position at which discharge confirmation is performed. The retreat position and the imaging position are located above the X-axis direction moving area of the stage 6a. The imaging unit 81a is electrically connected to the control unit 8, and its driving is controlled by the control unit 8. As the imaging unit 81a, for example, a CCD camera or the like is used.

The 1st lift drive part 81b is provided in the frame 64c of the support part 64, and is a moving mechanism which raises and lowers all the imaging parts 81a collectively. The lift drive unit 81b includes an air cylinder, and lifts and lowers the entire imaging unit 81a by driving the air cylinder. The first lift drive unit 81b is electrically connected to the control unit 8, and the driving thereof is controlled by the control unit 8. That is, the imaging part 81a is positioned by the 1st lift drive part 81b in a work position and a retreat position. As for the working position of the imaging part 81a, the optical axis of the imaging part 81a is located just below the nozzle formation surface (lower surface) of the application | coating head 6c, it is discharged from the nozzle of the application | coating head 6c, and the droplet of an emergency is carried out. It is a position that can be imaged. The retreat position of the imaging section 81a is set above the moving region of the stage 6a which moves the bottom of the application head 6c in the X-axis direction as the upper side of the working position, and the imaging section 81a and the stage This is a position where the interference of 6a is avoided.

The lighting unit 81c supplies the brightness required when all the imaging units 81a perform the imaging operation. The illumination part 81c is comprised so that raising and lowering is possible between the retreat position which does not prevent the application | coating operation | movement, and the work position which is an irradiation position which irradiates light when discharge confirmation is performed. The irradiation position of the illumination part 81c is a position opposite to the imaging part 81a and each application | coating head 6c, and is lower than all the application | coating heads 6c. In addition, the illumination part 81c is formed so that tilt adjustment is possible, and it inclines so that light may be irradiated toward the discharge surface of each application | coating head 6c at an irradiation position. The lighting unit 81c is electrically connected to the control unit 8, and its driving is controlled by the control unit 8. As the lighting unit 81c, for example, line-type lighting is used. As an example of linear illumination, illumination comprised by arrange | positioning LED etc. in a line is mentioned.

The receiving part 81d is a member which receives and accommodates the droplet discharged from each application | coating head 6c at the time of confirming discharge, and is provided so that it may mutually face each application | coating head 6c supported by the support part 64. As shown in FIG. The receiving portion 81d is configured to be able to move up and down between a retracted position that does not interfere with the application operation and a working position that is a receiving position that receives a drop when performing discharge confirmation. The receiving portion 81d is connected to the waste liquid tank 73 of the liquid feeding portion 6d via piping such as a tube or a pipe, and discharges the liquid droplets received from each application head 6c as waste liquid, and pipes the waste liquid. By the waste liquid tank 73.

The 2nd lift drive part 81e is provided in the mount | base mount 1a below the support part 64, and is a moving mechanism which supports and elevates the illumination part 81c and the receiving part 81d. The lift drive unit 81e is electrically connected to the control unit 8, and the driving thereof is controlled by the control unit 8. As the lift driver 81e, for example, a feed screw driver that uses a servo motor as a drive source is used. The lighting unit 81c and the receiving unit 81d are positioned at the work position and the retreat position by the second lift drive unit 81e. The working position of the illumination part 81c is a position where the optical axis of the imaging unit 81a in which the irradiation direction of the light of the illumination part 81c is positioned at the working position and the emergency direction of the droplets discharged from the nozzle of the application head 6c cross each other. The height position towards. The working position of the receiving section 81d is a height position at which the imaging section 81a forms a gap capable of picking up droplets between the upper edge of the receiving section 81d and the nozzle forming surface of the application head 6c. In addition, the retreat position of the illumination part 81c and the receiving part 81d is set to the lower side of these working positions below the moving area of the stage 6a which moves the base of the application | coating head 6c to an X-axis direction as the lower side of these working positions. do. At this position, interference between the illuminating section 81c and the receiving section 81d and the stage 6a is avoided. That is, the stage 6a passes through the upper part of the illumination part 81c and the receiving part 81d positioned in the retreat position.

The discharge confirmation unit 81 moves the imaging unit 81a, the illumination unit 81c, and the reception unit 81d to their respective work positions, turns on the illumination unit 81c, and generates light for imaging. Then, the discharge confirmation part 81 picks up each droplet discharged | emitted from the application | coating head 6c corresponding to each imaging part 81a, image-processes a picked-up image, and normalizes the straightness, shape, etc. of a droplet, and the like. The state of the coating head 6c is confirmed compared with the image of. After confirmation, the discharge confirmation unit 81 turns off the illumination unit 81c and moves the receiving unit 81d to the retracted position.

As shown in FIGS. 19 and 20, the cleaning wet part 82 is provided in the box-shaped container 82a of the upper opening, the plurality of wipe members 82b provided in the container 82a, and the wipe member 82b. The nozzle 82c which sprays the solvent of an adhesive agent, and the movement drive part (1st movement drive part) 82d which raise and lower the container 82a and move in the X-axis direction are provided. It is preferable that a solvent is a solvent contained in an adhesive agent.

The container 82a has a retracted position located below the moving height position of the stage 6a and the discharge surface (nozzle forming surface) of the application head 6c so that the movement of the stage 6a in the X-axis direction is not prevented. Move between working positions, which is the wipe position that can be touched. X-axis movement of the container 82a is performed so that at least the wipe member 82b may move in the X-axis direction from the one end of the discharge surface of the coating head 6c to the other end. Thereby, the wipe member 82b provided in the container 82a also moves with the container 82a. The container 82a is located adjacent to the conveyance part 3 side in the X-axis direction with respect to the receiving part 81d of the discharge confirmation part 81 located in the retreat position at the retreat position.

One wipe member 82b is provided with respect to one application head 6c, and is arranged in two rows in the Y-axis direction, and is provided in plurality. The wipe member 82b is a member which cleans the discharge surface of the coating head 6c by wetting the discharge surface of the coating head 6c in a wet state, and makes it wet. For example, the wipe member 82b is formed of a member having absorbency. In addition, when it is good to scrape off and clean the adhesive agent adhered to a discharge surface, you may form using the blade of elastic bodies, such as rubber | gum.

The nozzle 82c is a nozzle which sprays a solvent toward each wipe member 82b in order to make each wipe member 82b wet before removing the discharge surface of the application head 6c. The nozzle 82c is formed in tubular shape and provided along the Y-axis direction. The nozzle 82c is provided with a plurality of through holes (not shown) corresponding to the wipe members 82b for spraying the solvent.

The movement drive part 82d is a movement mechanism provided in the mount 1a below the support part 64, supporting the container 82a and the wipe member 82b, raising and lowering, or moving in the X-axis direction. . The moving drive part 82d is comprised by the lifting drive part and the X-axis direction drive part combining. The moving drive part 82d is electrically connected to the control part 8, and the drive is controlled by the control part 8. As the lift drive unit and the X-axis direction drive unit constituting the movement drive unit 82d, for example, a feed screw drive unit using a servo motor as a drive source, a linear motor type drive unit using a linear motor as a drive source, and the like are used.

Thus, the cleaning wet part 82 moves the container 82a from the retreat position to the original standby position by the movement drive part 82d, and moves to the original standby position, and each wipe member 82b in the container 82a is carried out. The discharge surface of the application | coating head 6c is wipe | cleaned by this, and the discharge surface of the application | coating head 6c is made wet. Each wipe member 82b is in a wet state by the supply of the solvent by the nozzle 82c.

In the above-described case, since the wipe member 82b has absorbency, even if the discharge surface of the application head 6c is removed, the wiped adhesive is absorbed by the wipe member 82b and falls from the wipe member 82b. none. Therefore, the container 82a and the nozzle 82c may be fixed to the standby position, and only the wipe member 82b may be moved from the retracted position to the wipe position by the moving driver 82d.

21 and 22, the discharge amount confirming unit 83 is provided on the box-shaped case 83a provided with the shutter S, the electronic balance 83b for measurement and the electronic balance 83b. A measuring container 83c, a shutter driver 83d for opening and closing the shutter S, and a movement driver (second movement driver) 83e for moving the case 83a in the Y-axis direction are provided.

The case 83a is located at a predetermined working position corresponding to the retreat position where the dispensing operation is not hindered and the application head 6c which is a weighing position for placing the measurement container 83c under each application head 6c. It is comprised so that a movement is possible, and is hold | maintained by the movement drive part 83e. The retraction position of the case 83a is set to the side of the movement area of the stage 6a moving in the X-axis direction. The shutter S which can be opened and closed is formed in the case 83a. The shutter S is opened and closed when metering.

The electronic balance 83b is provided under the shutter S as the case 83a, and measures the weight of the object in the measuring container 83c. The electronic balance 83b is electrically connected to the control part 8, the drive of which is controlled by the control part 8, and outputs a measured value to the control part 8.

The measurement container 83c is provided on the electronic balance 83b in the case 83a, and blows out the droplet discharged from each application head 6c. The measurement container 83c has a rectangular shape in plan view, the dimension in the Y-axis direction is a length dimension capable of taking in all the droplets discharged from one coating head 6c, and the dimension in the X-axis direction is Even if the droplets discharged from any of the two coating heads 6c arranged in two rows are the length dimensions which can be taken in without changing a position in an X-axis direction.

The shutter driver 83d is provided in the case 83a and is a moving mechanism for moving the shutter S in the X-axis direction. The shutter driver 83d includes an air cylinder and moves the shutter S in the X-axis direction to open and close by driving the air cylinder. The shutter driver 83d is electrically connected to the controller 8, and the driving thereof is controlled by the controller 8.

The movement drive part 83e is arrange | positioned above the X direction movement area | region of the stage 6a, and supports the case 83a in a suspended state. The movement driver 83e is electrically connected to the control unit 8, and the driving thereof is controlled by the control unit 8. As the movement driver 83e, for example, a feed screw drive unit using a servo motor as a drive source, a linear motor type drive unit using a linear motor as a drive source, and the like are used.

The discharge amount confirming unit 83 moves the electronic balance 83b to the weighing position in the Y-axis direction, positions the case 83a, that is, the metering container 83c, below the respective application heads 6c, and releases the shutter. (S) is opened, and after that, droplets are discharged from the whole nozzles of the application head 6c by a set number of times, and then the shutter S is closed. Then, from the output difference of the electronic balance 83b before and after the discharge, the total amount of all the droplets discharged from one application head 6c is sequentially obtained for each application head 6c. After the measurement, the electronic balance 83b, that is, the case 83a is moved to the standby position in the Y-axis direction.

As shown in FIG. 23, the cleaning part 6f is provided in the nozzle 91 which blows out gas, such as nitrogen and air, the piping 92 which sends a gas to the nozzle 91, and the path | route of the piping 92 in the middle. Foreign substances such as dust and garbage scattered from the wafer W on the stage 6a by the spray of the gas from the filter 93, the flow regulating valve 94 and the opening / closing valve 95, and the nozzle 91 are removed. The suction part 96 which sucks with air is provided.

The nozzle 91 is equipped with the spray port 91a which is an opening part which sprays gas with respect to the wafer W on the moving stage 6a. As for the nozzle 91, the spray port 91a faces the X-axis direction movement area | region of the stage 6a, and is arrange | positioned above the area | region. As the nozzle 91, for example, a nozzle having a slit spray port extending in the Y axis direction, a nozzle having a plurality of circular spray holes arranged in the Y axis direction, and the like are used. The size of the spray opening 91a of the Y-axis direction is formed more than the length of the stage 6a of the Y-axis direction.

The piping 92 is comprised by the tube, the pipe, etc. which communicate the nozzle 91 and gas supply part (not shown). The filter 93 is a member that removes foreign matter from the gas passing through the pipe 92. The flow rate adjusting valve 94 is a valve for adjusting the amount of gas flowing in the pipe 92. The on-off valve 95 is a valve for opening and closing the pipe 92. The flow regulating valve 94 and the opening / closing valve 95 are electrically connected to the control unit 8, and the driving thereof is controlled by the control unit.

The suction part 96 is formed in the box shape provided with the suction port 96a which is an opening part extended in a Y-axis direction. As for the suction part 96, the suction port 96a is arrange | positioned above the area | region toward the X-axis direction movement area | region of the stage 6a. The size of the suction port 96a in the Y-axis direction is formed to be equal to or greater than the length of the stage 6a in the Y-axis direction. Preferably, it is larger than the opening area of the spray opening 91a of the nozzle 91, and is formed more than the length of the spray opening 91a in the Y-axis direction. In addition, the flow rate of the gas sucked from the suction port 96a of the suction part 96 is preferably larger than the flow rate of the gas blown out from the spray port 91a of the nozzle 91.

The cleaning part 6f sprays gas with the nozzle 91 with respect to the wafer W on the moving stage 6a, and cleans the coating surface of the wafer W. As shown in FIG. Thereby, since the application | coating surface of the wafer W is cleaned before application | coating of an adhesive agent, and a foreign material does not exist on the application surface of the wafer W, application quality of the wafer W can be improved. In addition, the cleaning part 6f sucks the foreign matter scattered from the application surface of the wafer W on the stage 6a with the suction part 96 together with air. As a result, foreign matters scattered from the application surface of the wafer W are prevented from adhering to other device portions or adhered to the wafer W again, so that device contamination and recontamination of the wafer W can be prevented. .

The drying part 7 temporarily drys the adhesive agent apply | coated to the wafer W before a curing process which hardens an adhesive agent provided in the member separate from the manufacturing apparatus 1 of a semiconductor as a subsequent process. As shown to FIG. 7 and 24, the drying part 7 is equipped with the some heater plate 101 and the support part 102 which spaces apart the heater plate 101 by a predetermined space | interval, and supports it in a laminated state. In the embodiment of the present invention, the heater plate 101 is provided in five stages, for example.

The heater plate 101 is a mounting table on which the wafer W is arranged in a horizontal state, and heats the wafer W in the arranged state. In the heater plate 101, rod-shaped heaters 101a are arranged and arranged at substantially equal intervals. Moreover, the arrangement | positioning space of the heater 101a located in the edge part (both ends) is narrower than the center side. Since the heater 101a located at the end has no heater 101a outside, the heat dissipation on the outer circumferential side is larger than the center side of the heater plate 101, and the temperature of the outer circumferential portion is likely to decrease. . For this reason, the heater 101a located in the edge part is made close to the heater 101a of the side only by the part whose outer peripheral part is easy to radiate heat, and the temperature fall by heat radiation is prevented. The heating of the wafer W by the heater plate 101 is for promoting the drying of the adhesive applied to the application surface of the wafer W.

Temperature control of the heater plate 101 is performed by feedback control using the temperature measuring device T, such as a resistance thermometer. Since there is a temperature difference between the measured value of the RTD inserted in the heater plate 101 as the temperature measuring device T and the surface (or ambient temperature) of the heater plate 101, the temperature difference for the control is corrected in advance. Is set. Setting of temperature is performed corresponding to the memory | storage part with which the control part 8 is equipped, for example.

The heater plate 101 is provided with a plurality of rod-shaped lift pins 101b so as to be lifted and lowered. The lift pin 101b is a pin for transferring the wafer W to the hand 3a of the transfer section 3. Each lift pin 101b stands on the support plate 101c. The support plate 101c is disposed below the heater plate 101 and is configured to move up and down by the air cylinder 101d. Thereby, all the lift pins 101b in the support plate 101c of one piece are raised and lowered simultaneously. As shown in FIG. 24, each lift pin 101b avoids an arrangement position of the heater 101a and does not interfere with the hand 3a entering on the heater plate 101 for the transfer of the wafer W. FIG. Are arranged to avoid.

A plurality of lift pins 101b, support plates 101c, and air cylinders 101d with respect to one heater plate 101 function as one switching unit. The switching unit switches a contact state where the wafer W and the heater plate 101 contact each other, and a spaced state where the wafer W and the heater plate 101 are spaced apart by a predetermined distance. The wafer W is dried by the heat of the heater plate 101 in either a contact state or a spaced state.

As shown in FIG. 24, the heater plate 101 is provided with a plurality of suction holes 101e. Each adsorption hole 101e is provided so that it may disperse | distribute substantially evenly in the holding area of the wafer W, avoiding the arrangement position of the heater 101a and the lift pin 101b. The suction hole 101e communicates with a suction path (not shown). The suction path is connected to a suction part (not shown) such as a suction pump through a pipe such as a tube or a pipe.

The suction path of the suction hole 101e is configured to be switchable in accordance with the size of the wafer W (for example, 8 inches and 12 inches). That is, the suction path which applies a suction force only to the suction hole 101e correspondingly located in the adsorption range of the small size wafer W, and the adsorption of both the small size wafer W and the large size wafer W It is possible to switch to a suction path for applying a suction force to the suction hole 101e positioned corresponding to the range.

In order to reduce the temperature nonuniformity of the heater plate 101, the diameter of the lift pin 101b is so good that it is small. In consideration of the lift-up load of the wafer W, for example, by setting the pin diameter to 1.0 mm and the hole diameter to 2.5 mm, temperature unevenness and lift miss can be prevented. In order to reduce the temperature nonuniformity of the heater plate 101, the hole diameter of the suction hole 101e is so good that it is small. For example, by making the hole diameter 0.6 mm, temperature nonuniformity and adsorption miss can be prevented. In order to prevent cracks due to deformation of the wafer W due to adsorption, the hole diameter of the adsorption hole 101e is preferably set to 0.6 mm or less. Although the diameter of the lift pin 101b is smaller than 1.0 mm, it is considered that the effect of suppressing the temperature nonuniformity is increased, but the rigidity is lowered. For this reason, when making it smaller than 1.0 mm, it is good to make it small in the range which does not cause the lifting of the wafer W from the relationship between the weight of the wafer W and the number of the lift pins 101b. The smaller the pore diameter of the adsorption hole 101e is, the higher the effect of preventing temperature nonuniformity is, but the adsorption force is lowered. For this reason, what is necessary is just to make it small in the range which does not interfere with the adsorption | suction of the wafer W from the relationship between the adsorption force of each adsorption hole 101e, and the number of adsorption holes 101e.

In order to suppress the dry unevenness by the heater plate 101, you may make the control part 8 change the stop position of each lift pin 101b according to the temperature measured by the temperature measuring device T. FIG. The heater plates 101 are stacked. For this reason, the space temperature between the heater plates 101 easily rises, and it is difficult to reliably suppress the dry unevenness only by controlling the temperature of the heater plate 101. Therefore, it is possible to control the amount of heat applied from the heater plate 101 to the wafer W by changing the stop position of each lift pin 101b and adjusting the separation distance between the heater plate 101 and the wafer W. FIG. Become. For example, when the temperature of the heater plate 101 rises more than necessary, the separation distance of the heater plate 101 and the wafer W is made large accordingly. In particular, it becomes possible to adjust the amount of heat applied to the wafer W faster than controlling the temperature of the heater plate 101. Thereby, an adhesive can be dried uniformly, suppressing the dry stain of the adhesive agent on the wafer W. As shown in FIG. Further, the stop position of the lift pins 101b of the heater plates 101 may be adjusted such that the distance between the heater plate 101 and the wafer W increases from the lower end to the upper end.

The temperature measuring device which measures the temperature of the space on the heater plate 101 is provided, and the heater plate 101 and the wafer W are based on the result of having comprehensively judged the measurement temperature of both the temperature measuring device and the temperature measuring device T. ), That is, the stop position of the lift pin 101b may be adjusted. In this case, not only the heater plate 101 but also the amount of heat imparted by the ambient temperature can be taken into consideration, so that dry unevenness of the adhesive can be suppressed more reliably. The stop position of the lift pin 101b may be adjusted based only on the measurement result of the space temperature on the heater plate 101.

The temperature of the plurality of stacked heater plates 101 is set such that the temperature of the upper end is lower than the lower end, for example, so that the set temperature gradually decreases as it goes to the upper end, or the temperature of the uppermost heater plate 101 is changed. It may be set lower than the set temperature of the heater plate 101. This is because the air heated in each heater plate 101 rises on the wall plate 102a, so that the upper heater plate 101 tends to be at a higher temperature.

As shown in FIG. 7, the support part 102 is comprised by the pair of wall board 102a and the some support member 102b. The pair of wall plates 102a are arranged to sandwich the heater plates 101 in the horizontal state from the horizontal direction. Each support member 102b is fixed to the pair of wall plates 102a so as to support four corners of the heater plate 101. That is, one heater plate 101 is supported by four support members 102b. The support member 102b supports the heater plate 101 through the heat insulation member 102c, respectively.

The operating rod of the air cylinder 101d is connected to the vicinity of the center portion of the connecting rod (not shown) provided horizontally. Both ends of the connecting rod are supported on the outer side of the wall plate 102a so as to be movable up and down through a guide member (not shown). The connecting rod is also connected to the support plate 101c of the lift pin 101b. As a result, the lift pin 101b can be lifted up and down by the air cylinder 101d.

As shown in FIG. 1, the control part 8 is equipped with the microcomputer which centrally controls each part, and the memory | storage part which stores application | coating information, various programs, etc. concerning application | coating. The control part 8 is connected with the operation part 8a which accepts operation from an operator.

Application | coating information contains predetermined application | coating patterns, such as a dot pattern, information regarding the discharge frequency of the application | coating head 6c, the moving speed of the wafer W, etc. The application information is stored in advance in the storage unit by an input operation to the operation unit 8a, data communication, or a portable storage device. As the storage unit, various memories, a hard disk drive (HDD), and the like are used.

The control part 8 controls the application | coating head 6c and the stage conveyance drive part 6b based on application | coating information, when performing an application | coating operation, and controls the discharge | emission stabilization part 6e when performing discharge stabilization operation. Here, the application | coating operation is an operation | movement which apply | coats an adhesive agent to the wafer W on the stage 6a. In addition, the discharge stabilization operation is a discharge confirmation operation, a wet wipe operation, a discharge amount confirmation operation, or the like.

Next, the manufacturing operation (manufacturing method) of the semiconductor device which the manufacturing apparatus 1 of the semiconductor device mentioned above performs is demonstrated. Moreover, the control part 8 of the manufacturing apparatus 1 performs a manufacturing process (including discharge stabilization process) based on various programs.

As shown in FIG. 25 (refer FIG. 1), the wafer W is extracted by the conveyance part 3 from the accommodating part 2, and is conveyed to the positioning part 4 (step S1). First, the conveyance part 3 operates the arm 3b, and extracts the wafer W from the accommodating part 2 for carrying in by the hand 3a. More specifically, the height position corresponding to the support plate 2a which supported the wafer W to be conveyed this time among the accommodating parts 2 for carrying in, specifically, of the support plate 2a and the support plate 2a The hand 3a is raised to a position between the reinforcing members 12. Subsequently, the arm 3b is extended so that the hand 3b enters the lower side of the wafer W supported by the support plate 2a, and the arm 3b is raised to lift the wafer W from the lower side. Adsorb and receive. Then, after contracting the arm 3b, the arm 3b is lowered to the original height position.

Thereafter, the arm 3b moves with the hand 3a in the X-axis direction and pivots in the θ direction to stand by at the delivery position to the alignment portion 4. Subsequently, the transfer section 3 operates the arm 3b to transfer the wafer W to the centering section 4a of the alignment section 4 by the hand 3a. In more detail, the conveyance part 3 extends the arm 3b to the arrow A1 direction of FIG. 1, and moves the hand 3a to the upper side of the support 31 of the centering part 4a, The support 3a1 which releases suction by 3a, lowers the arm 3b, enters the hand 3a into the recessed part of the support 31, and comprises the support 3a1 which comprises the comb-tooth of the hand 3a, It is set as the state combined with each support part 31a which comprises the comb teeth of (31). In the lowering process, the wafer W on the hand 3a is disposed on the support 31.

Thereafter, alignment is performed by the alignment unit 4 (step S2). First, the centering part 4a performs alignment of the wafer W with respect to the hand 3a of the conveyance part 3. In the state where each support part 3a1 which comprises the comb teeth of the hand 3a is combined with each support part 31a which comprises the comb teeth of the support 31, the centering part 4a is a wafer (on the support 31). The lever part 32a of each press part 32 is moved to W to a preset stop position from 3 directions toward W). Thereby, the pin of each lever part 32a is pressed against the outer periphery of the wafer W, the wafer W is moved in a plane, and the center of the wafer W is made to match the center of the support 31, Positioning (centering) which centers the center of the hand 3a and the center of the wafer W in the state positioned with respect to the support 31 is performed. When centering is completed, each lever part 32a retreats to an original position and waits.

Next, the alignment part 4b performs alignment in the (theta) direction. That is, when the information which requires a prealignment is memorize | stored in the memory | storage part, the control part 8 makes the prealignment part 4b perform prealignment. First, the hand 3a in a state combined with the comb teeth of the support 31 is lifted up to suck and receive the wafer W disposed on the support 31, and to the holding portion 41 of the prealignment portion 4b. To the position where adsorption is possible. Then, the prealignment part 4b adsorb | sucks and hold | maintains the wafer W on the hand 3a by the lower surface of the holding part 41. As shown in FIG. At this time, the adsorption of the wafer W by the hand 3a stops at the timing at which the transfer is good, and when the transfer is completed, the hand 3a descends by a predetermined distance that does not interfere with the rotation of the wafer W and waits. do. At this time, the prealignment part 4b has previously moved the imaging part 43 to the imaging position according to the size of the wafer W by the movement drive part 44. FIG. Thereafter, while rotating the holding portion 41 by the rotation driving portion 42, the outer peripheral portion of the wafer W is set by the imaging portion 43 through the openings H of the flat plates 45 and 46 at a set timing. Image pickup is performed sequentially.

For each image pickup, the prealignment section 4b performs image processing on the captured image by the image processing operation section to determine whether or not a pattern matching the previously stored reference notch exists. And if there exists a pattern (notch N) which matches a reference notch, the correction amount of the (theta) direction is computed from the position of the notch N. Subsequently, the control part 8 rotates the holding | maintenance part 41 by the calculated correction amount, and raises the hand 3a to the position which contacts the lower surface of the wafer W hold | maintained by the holding part 41. FIG. When the hand 3a ascends to a position in contact with the lower surface of the wafer W, the suction of the hand 3a starts, and the suction of the wafer W by the holding portion 41 of the prealignment portion 4b is initiated. It stops and delivers the wafer W of the lower surface of the holding part 41 to the hand 3a. The hand 3a receives and holds the wafer W from the lower surface of the holding portion 41, so that the alignment of the wafer W with respect to the hand 3a by the positioning portion 4 is completed.

Then, the wafer W is conveyed to the irradiation part 5 by the conveyance part 3 from the positioning part 4 (step S3). If the hand 3a receives and holds the wafer W from the holding portion 41 of the positioning portion 4, the arm 3b is retracted to retreat the hand 3a from the positioning portion 4, Moreover, the arm 3b is rotated in the (theta) direction, and the wafer W is positioned in the irradiation work start position by the irradiation part 5.

Next, UV irradiation is performed by the irradiation unit 5 (step S4). The irradiation part 5 irradiates UV with the UV lamp 5a to the application | coating surface of the wafer W on the hand 3a which moves by the operation of the arm 3b, and performs surface modification. At this time, the hand 3a reciprocates below the UV lamp 5a by the advancing / removing operation of the arm 3b. The illuminance of the UV lamp 5a is controlled to be constant to a predetermined value. After irradiation, the hand 3a retreats to the same position as the irradiation work start position.

Then, the wafer W is conveyed from the irradiation part 5 to the application part 6 by the conveyance part 3 (step S5). The conveying part 3 pivots the arm 3b to (theta) direction, makes the hand 3a the transfer position of the wafer W with respect to the application part 6, and then moves the arm 3b to the arrow of FIG. The stretching operation is performed in the direction A2) to move the wafer W toward the stage 6a positioned at the standby position in the application portion 6 by the hand 3a. When the hand 3a is positioned on the stage 6a, the carry section 3 lowers the arm 3b. The stage 6a raises and lifts the lift pin 51b, and the wafer W on the hand 3a, which is lowered by the lowering of the arm 3b, moves from the hand 3a to the lift pin 51b. Delivered. Adsorption of the wafer W by the hand 3a is released between the arm 3b starting to descend and until the wafer W contacts the lift pin 51b.

At the time of delivery of the wafer W, the hand 3a is positioned so that its center coincides with the center of the stage 6a waiting in the standby position (the rotation center by the rotation drive unit 52). Therefore, although the center of the arrangement | positioning member of the hold pin 21 was made into the center of the hand 3a, when there is no hold pin 21, when the hand 3a is located with respect to the stage 6a of a standby position, The point on the hand 3a which faces the center of the stage 6a may be the center of the hand 3a.

When the hand 3a retreats from above the stage 6a by the contracting operation of the arm 3b, the lift pin 51b is lowered, the wafer W is placed on the stage 6a, and the suction of the stage 6a is carried out. The suction force of the hole 51e is exerted to adsorb and hold the wafer W. On the other hand, the hand 3a is waiting at the delivery position. Here, the transfer position of the wafer W with respect to the alignment part 4 of the conveyance part 3, the irradiation work start position with respect to the irradiation part 5, and the wafer W with respect to the coating part 6 The transfer position is only different in the direction of the hand 3a, and the positions in the X-axis direction are all the same position.

Subsequently, application | coating is performed by the application part 6 (step S6). If the wafer W placed on the stage 6a in the standby position by the hand 3a is the wafer W of undicing, the application part 6 is moved from the standby position by the movement driver 53 to the stage 6a. ) Is moved in the X-axis direction. On the other hand, if the wafer W disposed on the stage 6a is the wafer W of the dicing fill, the coating unit 6 uses the imaging unit 65 to form the corner portions of the two chips set on the wafer W ( Each image including C) is imaged, and the positional shift in the XYθ direction of the wafer W is detected with high accuracy from the positional information of the two corner portions C obtained based on the captured image. Then, after the position correction of the stage 6a is performed based on the detected position shift, the stage 6a is moved in the X-axis direction from the standby position. Thus, the control part 8 makes the application part 6 selectively perform position detection based on the information of whether to perform the position detection using the imaging part 65 stored in the memory | storage part.

In this way, since the wafer W of undicing may apply (beta apply) an adhesive to the whole surface, it does not require high positioning accuracy, and the positioning accuracy by the positioning part 4 is not required. Because is enough. On the other hand, since the adhesive W may be apply | coated only to the application | coating surface on each chip | tip so that the wafer W of the dicing peel may not apply an adhesive agent in the cut line L, in that case, This is because positioning accuracy higher than the positioning accuracy is required.

The coating unit 6 sprays gas onto the coating surface of the wafer W on the stage 6a moving in the X-axis direction by the nozzle 91 of the cleaning unit 6f, and cleans the coating surface. Foreign matter scattered from the air is sucked by the suction part 96 of the cleaning part 6f. Subsequently, each of the nozzles of each of the coating heads 6c is adapted to the timing at which the wafer W on the stage 6a moving in the X-axis direction passes through the lower side of each of the coating heads 6c. The adhesive is discharged from the film, and the adhesive is applied onto the coated surface of the wafer (W). After application | coating, the application part 6 moves the stage 6a by the movement drive part 53 to a standby position in an X-axis direction.

Application | coating of an adhesive agent is performed so that an adhesive agent may apply | coat (beta application | coating) to the whole application | coating surface of the wafer W, or it may be performed so that it may apply | coat to the predetermined | prescribed area | region for every chip based on an application | coating pattern. That is, when this wafer W is the unwound wafer W, the pattern of beta application | coating is previously memorize | stored in the memory | storage part of the control part 8. In addition, when this wafer W is the wafer W of a dicing peel, the application | coating pattern of the adhesive agent to a chip is previously memorize | stored with the memory | storage part of the control part 8 with the positional information of each chip. And the control part 8 controls the discharge of the adhesive agent from each nozzle of each application | coating head 6c based on the information stored in the memory | storage part.

During the application | coating operation, the wafer W is heated by the heating stage 51 of the stage 6a so that it may become desired temperature, and drying of the adhesive agent apply | coated to the coating surface of the wafer W is accelerated | stimulated. Accordingly, the adhesive on the wafer W is accelerated to dry by heat, and the fluidity rapidly decreases. For this reason, when an adhesive agent is apply | coated to the application surface of the wafer W at room temperature, the adhesive agent apply | coated in the quantity required for formation of the adhesive film of a desired thickness flows in the process of gentle drying, and the film thickness will not become uniform. However, the liquid flow which the adhesive deviates from by the speed change and centrifugal force which generate | occur | produce in the wafer W while conveying the wafer W to which the adhesive agent was apply | coated to the drying part 7 can be prevented.

Application of the adhesive to the wafer W may be completed by passing the wafer W once through the lower side of the application head 6c. However, the adhesive is further applied onto the already applied adhesive by reciprocating or passing three or more times. It may be applied repeatedly. When the adhesive is repeatedly applied, the wafer W is heated to facilitate drying of the adhesive applied to the coated surface of the wafer W. When the adhesive is repeatedly applied, the fluidity of the previously applied adhesive is reduced by drying. . For this reason, the wet expansion of an adhesive agent is suppressed and there exists an advantage which can laminate | stack an adhesive agent favorably.

Next, the wafer W is conveyed from the application part 6 to the drying part 7 by the conveyance part 3 (step S7). The conveyance part 3 extends the arm 3b in the direction of the arrow A2 of FIG. 1 in a delivery position, and is staged 6a positioned by the hand 3a in the standby position in the application part 6 by the hand 3a. The wafer W is received from above. At this time, the stage 6a releases the suction of the wafer W, raises the lift pin 51b, and waits. And the conveyance part 3 inserts the hand 3a between the stage 6a and the wafer W, and adsorb | sucks and hold | maintains so that the wafer W may be pulled up from the bottom. In addition, the arm 3b is contracted and pivoted in the θ direction to position the hand 3a at the transfer position to the drying unit 7. The delivery position with respect to the drying part 7 is the same position as the delivery position with respect to the alignment part 4. Thereafter, the wafer W is placed on the empty heater plate 101 in the drying unit 7. For example, when all five heater plates 101 are empty, it is a state which arrange | positions the wafer W sequentially from the uppermost heater plate 101 toward the lower end.

In the transfer of the wafer W to the heater plate 101, first, the arm 3b is raised to position the hand 3a at a height position corresponding to the heater plate 101 on which the wafer W is placed. . Subsequently, the arm 3b is extended in the direction of the arrow A1 in FIG. 1 to enter the hand 3a onto the heater plate 101, and then the arm 3b is lowered. On the other hand, the heater plate 101 raises and lifts the lift pin 101b, and when the hand 3a descends, the wafer W on the hand 3a is transferred onto the lift pin 101b. In addition, the suction of the wafer W by the hand 3a is released until the arm W starts to descend and the wafer W contacts the lift pin 101b. When the hand 3a is retracted from above the heater plate 101 by the contracting operation of the arm 3b, the lift pin 101b is lowered and the wafer W is disposed on the heater plate 101, thereby heating the heater plate 101. Is held by the suction force of the suction hole 101e. The retracted hand 3a also returns to the delivery position and waits for the next operation. At this time, since the drying operation by the drying unit 7 requires a longer time than the operation by the positioning unit 4, the irradiation unit 5, and the application unit 6, the wafer by the drying unit 7 You may make it carry the drive part 3 so that the operation of supplying, positioning, UV irradiation, and application | coating of the next wafer W may be performed until the predetermined drying time of (W) passes.

Then, drying is performed by the drying part 7 (step S8). When the wafer W is placed on the heater plate 101 by the hand 3a, the drying unit 7 heats the wafer W on the heater plate 101. In this state, the wafer W is heated for a predetermined drying time, and the adhesive applied on the wafer W is dried. Since the heater plate 101 of the drying part 7 is multistage, the drying part 7 can stock the wafer W by the number of steps. In addition, the heater plate 101 may be always heated at the set temperature by the heater 101a, or may be heated in accordance with the timing at which the wafer W is supplied. At this time, in order to heat the heater plate 101 whose temperature once decreased to a set temperature, a certain time is required, for example, a heater in which the wafer W is to be arranged during the coating operation by the coating unit 6. The heating of the plate 101 may be started.

Finally, the wafer W is conveyed from the drying part 7 to the accommodating part 2 by the conveyance part 3 (step S9). The transfer part 3 raises the arm 3b according to the height position of the heater plate 101 in which the wafer W carried out to a delivery position is arrange | positioned, and then extends the arm 3b to operate the hand 3a. The wafer W is received by. At this time, the heater plate 101 releases the suction of the wafer W, raises the lift pin 101b, and waits. Then, the hand 3a enters between the heater plate 101 and the wafer W, and holds the wafer W so as to lift the wafer W from the bottom. Thereafter, the arm 3b is contracted to return the hand 3a to the delivery position, and the arm 3b is moved in the X-axis direction and pivoted in the θ direction to be positioned at the delivery position to the receiving portion 2. Let's do it. Subsequently, the transfer section 3 operates the arm 3b to transfer the wafer W to the accommodation section 2 for carrying out by the hand 3a. That is, since the support plate 2a in which the wafer W on which the application of the adhesive is completed has been accommodated in the support plate 2a of the accommodating portion 2 is empty, the wafer W on which the application has been applied to the support plate 2a is returned. The arm 3b is moved up and down so as to make it work.

In this operation, the application of the adhesive to the one wafer W is completed. And the above-mentioned operation is repeated until application | coating of the adhesive agent to all the wafers W accommodated in the accommodating part 2 is completed.

In this manufacturing process, discharge stabilization operation | movement is performed regularly (every application | coating, every predetermined time), or every designated time at the timing which an application | coating operation is not performed. As the discharge stabilization operation, the discharge confirmation operation is performed by the discharge confirmation unit 81, the wet wipe operation is performed by the cleaning wet unit 82, and the discharge amount confirmation operation is performed by the discharge amount confirmation unit 83.

The discharge confirmation unit 81 moves the receiving unit 81d to the receiving position in the state where the stage 6a is positioned at the standby position, turns on the lighting unit 81c, and then each imaging unit 81a. Each droplet discharged from the corresponding application head 6c is imaged from the horizontal direction. Subsequently, the discharge confirmation unit 81 performs image processing on the captured image, and compares the presence or absence, the straightness, the shape, and the like of the droplets with the image at the normal time, and confirms the discharge state from each nozzle of the application head 6c. After confirmation, the discharge confirmation unit 81 turns off the illumination unit 81c and moves the receiving unit 81d to the retracted position. Thereby, the discharge state from each nozzle of the application | coating head 6c is confirmed, and when there exists a problem in that state, maintenance is performed, and generation | occurrence | production of the application | coating defect of the adhesive agent resulting from abnormal discharge can be suppressed.

The cleaning wet part 82 moves the container 82a from the standby position to the original standby position by the moving drive part 82d, and responds by each wipe member 82b in the container 82a. The discharge surface of the coating head 6c is removed. Moreover, each wipe member 82b is in the wet state by supply of the solvent by the nozzle 82c. Thereby, while the adhesive adhered to the discharge surface of the application head 6c is wiped off, the discharge surface after wiping off the adhesive can be made wet. Therefore, the adhesive which has not been completely wiped off and remains on the discharge surface of the coating head 6c, or the adhesive newly attached by the discharge from the nozzle of the coating head 6 afterwards becomes dry and becomes a solidified product. Since it is prevented, generation | occurrence | production of discharge abnormality, such as discharge bending, resulting from adherence of the solidified material of an adhesive agent to the nozzle periphery of a discharge surface can be suppressed. In addition, since the adhesive in the nozzle 82c is prevented from drying and thickening from the completion of wiping to the start of the next discharge, generation of non-ejection due to thickening of the adhesive can be suppressed. Therefore, generation | occurrence | production of the coating defect of the adhesive agent resulting from abnormal discharge can be suppressed.

The discharge amount confirming unit 83 moves the electronic balance 83b to the weighing position in the Y-axis direction, positions the metering container 83c under each application head 6c, and opens the shutter S, Thereafter, the droplets are discharged from the total nozzles of the coating head 6c by a set number of times, and the total amount of the total droplets discharged from one coating head 6c is output from the output difference of the electronic balance 83b before and after the discharge. It calculates sequentially every (6c). After the measurement, the discharge amount confirming unit 83 closes the shutter S and moves the electronic balance 83b to the standby position in the Y-axis direction. As a result, the discharge amount of the droplet is confirmed, and when there is a problem in the discharge amount, maintenance (cleaning of the discharge surface of the coating head 6c, adjustment of the discharge amount from each nozzle of the coating head 6c, etc.) is performed. The occurrence of more than the discharge amount can be suppressed.

As explained above, the manufacturing apparatus 1 of the semiconductor device which concerns on embodiment of this invention is the irradiation part 5 which irradiates an ultraviolet-ray to the wafer W moved by the conveyance part 3, and the stage 6a. The application part 6 which discharges and apply | coats an adhesive agent by the application | coating head 6c toward the said wafer W, and the drying part 7 which dry an adhesive agent apply | coated to the wafer W by heat are provided. According to this structure, the surface of the application | coating surface of the wafer W is performed by the irradiation part 5, the adhesive agent is discharged and apply | coated to the application | coating surface by the application head 6c, and the adhesive agent on the application surface is a drying part 7 Dried by heat). Accordingly, the surface modification improves the adhesion between the coated surface of the wafer W and the adhesive, and the leveling property of the adhesive (uniformity of wet expansion), and further, the application and drying portion 7 of the adhesive by the application head 6c. By drying, it becomes possible to apply | coat uniformly the film | membrane of the desired film thickness of an adhesive agent to the coating surface of the wafer W, without using an adhesive sheet like the conventional one. Thus, even when an adhesive is used, a gap (void) is formed between the coating film of the adhesive formed on the chip, the circuit board, and the like when the chip diced and separated into pieces from the wafer W is mounted on a circuit board or another chip. This can be prevented from occurring and the reliability of the bonding performance of the chip to the circuit board or the like can be improved. Further, the adhesive is applied only to the portion where the formation of the adhesive film on the wafer W is required. Thereby, compared with the case where the adhesive sheet which requires the area of the wafer W or more is used, the reduction of the material cost of an adhesive agent and the improvement of material use efficiency can be implement | achieved, In addition, a high quality semiconductor device can be manufactured.

In addition, the wafer W on which the adhesive film is formed is separated into chips, and the separated chips are bonded to the mounting surface of the object to be mounted through the adhesive film. At this time, the film | membrane of desired thickness is apply | coated and formed uniformly on the mounting surface where each chip is flat. Therefore, the adhesive film of each chip | tip can be made to contact a mounting surface with which a mounting object is flat, without generating a clearance gap. As a result, when the chip is adhered to the mounting surface of the object to be mounted, when the adhesive layer in the semi-cured state is cured by heating, bubbles in the gap can be prevented from expanding and causing a problem of lifting and damaging the chip. have.

In addition, foreign matter is present on the coated surface of the wafer W by spraying gas toward the coated surface of the wafer W disposed on the stage 6a, cleaning the coated surface, and sucking foreign matter scattered from the coated surface by cleaning. In addition, the foreign matter removed by the spray of the gas is prevented from reattaching. For this reason, it becomes possible to improve the application | coating quality of the wafer W, As a result, a high quality semiconductor device can be manufactured. That is, since foreign matters are prevented from admixing into the coating film of the adhesive agent formed in the wafer W, the foreign material is separated between the chip dicing from the wafer W and separated into pieces, and the circuit board or another chip to be joined. It is possible to prevent the occurrence of electrical defects such as insulation defects and physical defects such as cracks and damages due to the presence.

In addition, the irradiation unit 5 includes a lamp 5a for generating ultraviolet rays, a sensor 5c as a detector for detecting the amount of ultraviolet light generated by the lamp 5a, and an ultraviolet ray detected by the sensor 5c. An adjusting unit (e.g., lamp movement driver 5b) for adjusting the amount of irradiation light to the coated surface of the wafer W based on the amount of light is maintained. According to such a structure, the irradiation light quantity of UV light irradiated to the wafer W by the irradiation part 5 is maintained at a setting value, and it is suppressed that the irradiation light quantity fluctuates. For this reason, surface modification with respect to the back surface (coating surface) of the wafer W can be reliably and stably performed. Therefore, the coating quality of the wafer W can be improved, and as a result, a semiconductor device of high quality can be reliably manufactured.

When the lamp movement driver 5b for adjusting the relative distance between the lamp 5a and the coated surface of the wafer W is used as the adjustment unit, the illuminance light amount can be adjusted with a simple configuration, and the control of the adjustment is easy. Can also be done correctly.

In addition, the drying unit 7 is configured by stacking a plurality of stages apart from the heater plate 101 having the heater 101a therein. According to such a structure, it is possible to dry as many wafers W as a single number at the same time. For this reason, the manufacturing time at the time of mass production can be shortened, preventing the enlargement of an apparatus.

Moreover, the positioning part 4 with a height lower than the accommodating part 2, the irradiation part 5, the application part 6, and the drying part 7 is arrange | positioned on the drying part 7. Therefore, the arrangement space of the alignment part 4 alone can be omitted, and as a result, space saving can be realized.

Moreover, the periphery of the wafer W which hold | maintained the pre-alignment part 4b, the holding part 41 hold | maintains the wafer W on the lower surface, and the imaging part 43 protruded from the outer periphery of the holding part 41. The part is configured to image from the upper side, and is disposed above the centering portion 4a. For this reason, it is not necessary to separately arrange each arrangement space of the centering part 4a and the prealignment part 4b in a horizontal direction, and also space saving of an installation area can be achieved by this. Moreover, since the conveyance distance of the wafer W from the centering part 4a to the prealignment part 4b can be made very short compared with the case where the wafer W is conveyed in a horizontal direction, the shortening of conveyance time It is possible to improve the productivity.

Moreover, the centering part 4a presses and moves the support stand 31 which supports the wafer W, and the wafer W on the support stand 31 in a planar direction toward the center from the periphery, and the support stand 31 is carried out. A plurality of pressing portions 32 for centering the wafer W in the center of the hand 3a positioned with respect to are provided. According to this configuration, the wafer W is pressed against the hand 3a positioned with respect to the support 31, and its end portion is pressed by the pressing portions 32 to move in the planar direction. Fine adjustment of the wafer position becomes possible. As a result, the center position of the wafer W can be accurately positioned at the center position of the hand 3a positioned with respect to the support 31. Therefore, since it becomes possible to supply the wafer W to the application | coating part 6 with high precision, application | coating of the adhesive agent to the wafer W by the application part 6 can be performed with high precision. As a result, the quality of the adhesive film formed on the wafer W can be improved.

Moreover, each press part 32 is made to stop the pin provided in each lever part 32a in the stop position which can form a clearance gap with the outer periphery of the wafer W. Moreover, as shown in FIG. According to such a structure, the wafer W is not pinched | interposed in the state which the pin of the three press part 32 contacted the outer periphery of the wafer W simultaneously. Therefore, when positioning by the press part 32, the pins of the 3 press parts 32 are simultaneously pressed against the outer periphery of the wafer W, and the outer periphery of the wafer W is prevented from being broken, and also the wafer Curving between (W) is prevented. As a result, the position shift of the wafer W which arises because the curved wafer W is restored when the press part 32 retreats is avoided. Therefore, even in the case of using a thin paper wafer W such as a semiconductor wafer, accurate positioning can be performed.

In addition, the hand 3a includes a plurality of comb-shaped supports 3a1 for supporting the wafer W, and the support 31 is a plurality of comb-shaped supports 31a for supporting the wafer W. As shown in FIG. It is provided. Each support part 31a of the support stand 31 has the shape combined with each support part 3a1 of the hand 3a. On each support 3a1 of the hand 3a and each support 31a of the support 31, the wafer W is supported in plural parts, i.e., 6 parts in the hand 3a and 7 parts in the support 31. . According to such a structure, it becomes possible to make the support space of the wafer W by each support part 3a1 and 31a1 the minimum. Therefore, since the wafer W is supported evenly in many parts on the support base 31 and on the hand 3a, the bending by the weight of the wafer W itself can be suppressed. As a result, since the position shift by the bending of the wafer W is prevented, accurate positioning can be performed with a simple structure.

Moreover, the control part 8 as an adjustment part which adjusts the pushing amount of the wafer W by each press part 32 is provided. According to such a structure, the press-in amount by the some press part 32 is adjusted by the control part 8, and the wafer W on the hand 3a combined with the support stand 31 is attached to each press part 32. FIG. By moving in the plane direction, the center of the wafer W is aligned with the center of the hand 3a positioned with respect to the support 31. For this reason, accurate positioning can be performed easily.

In addition, the prealignment part 4b includes the holding part 41 which holds the wafer W, and the rotation drive part 42 which rotates the holding part 41 in the plane along the oiled surface of the wafer W. As shown in FIG. And the imaging section 43 for photographing the outer circumferential portion of the wafer W held by the holding section 41, and the picked-up image captured by the imaging section 43 to process the wafer W in the rotational direction. An image processing calculating section for obtaining the inclination (direction) is provided. According to such a structure, since the outer peripheral part of the wafer W is imaged by the imaging part 43 and the image is used for alignment, without damaging the wafer W, fine adjustment of a wafer position is possible. Become. As a result, even in the case of using a thin paper wafer W such as a semiconductor wafer, accurate positioning can be performed.

In addition, the image processing calculation unit calculates a correction amount for aligning the direction of the wafer W with respect to the stage 6a based on the picked-up image picked up by the imaging unit 43, thereby positioning the correction amount. Since it is used for, accurate positioning can be performed easily.

In addition, a control unit 8 for controlling the alignment unit 4 and a storage unit for storing information regarding the necessity and unnecessaryness of alignment of the wafer W by the alignment unit 4 are provided. Then, the controller 8 determines whether or not to position the wafer W by the alignment unit 4 based on the information stored in the storage unit. According to this configuration, the alignment of the wafer W by the alignment portion 4 is avoided with respect to the wafer W which does not require high positioning accuracy, for example, the wafer W of undicing. The manufacturing time can be shortened. For this reason, productivity can be improved.

In addition, the holding part 41 of the prealignment part 4b adsorb | sucks and receives the upper surface of the wafer W hold | maintained on the hand 3a from the upper side to the lower surface, and receives the outer periphery of the wafer W in the state. An image is picked up by the image capturing section 43 disposed above the holding section 41. According to such a structure, the operation | movement from the delivery of the wafer W to imaging can be performed smoothly, and the time required for prealignment can be shortened. For this reason, it becomes possible to realize the improvement of productivity.

In addition, the holding part 41 makes only the outer peripheral part (region where the notch N is formed) of the wafer W protrude from the outer peripheral part. For this reason, the part which protrudes about the holding | maintenance area | region by the holding | maintenance part in the wafer W is few, and even if the thin part W is protruding the part (outer peripheral part) which protrudes by its own weight is prevented as much as possible. Therefore, the fall of the position detection precision of the notch N by the curvature of an outer peripheral part is prevented. According to this, accurate positioning can be performed.

In addition, since the wafer W positioned at the centering portion 4a and the prealignment portion 4b is supplied to the stage 6a of the coating portion 6, the wafer W is supplied to the stage 6a. Can supply with good precision. For this reason, when the position detection of the wafer W using the imaging unit 65 is performed on the stage 6a, the imaging unit 65 captures an imaging target portion such as each unit to be imaged on the chip on the wafer W. It is possible to reliably put in the field of view. As a result, the detection error caused by the wafer W being supplied away from the field of view of the imaging section 65 is prevented, so that the position detection of the wafer W can be efficiently performed. According to this, the improvement of productivity can be realized.

Moreover, the accommodating part 2 is equipped with the support plate 2a which has the comb-tooth shaped support part 2a1 for supporting the wafer W, and the hand 3a is comb-shaped for supporting the wafer W A plurality of support portions 3a1. Each support part 3a1 of the hand 3a has the shape which enters between each support part 2a1 of the support plate 2a. According to this configuration, when transferring between the receiving portion 2 and the hand 3a, each supporting portion 3a1 of the hand 3a is combined with each supporting portion 2a1 of the supporting plate 2a to support the supporting plate 2a. The wafer W is received from above, or the wafer W is transferred onto the support plate 2a. This eliminates the need for a plurality of liftable pins for transfer as in the prior art. In addition, the wafer W is placed on a plurality of portions of each support portion 2a1 of the support plate 2 and each support portion 3a1 of the hand 3a, that is, seven portions on the support plate 2 and on the hand 3a. Support in 6 parts. For this reason, since the support space | interval of the wafer W by each support part 2a1, 3a1 can be made to the smallest, and it becomes possible to prevent the deformation of the wafer W at the time of delivery, reliable delivery can be performed. Therefore, it is possible to stably transfer the thin paper wafer W such as the semiconductor wafer by the robot hand.

Moreover, the support plate 2a is equipped with the some holding pin 11 which regulates the movement to the planar direction of the supported wafer W, and the hand 3a is provided to the planar direction of the supported wafer W A plurality of hold pins 21 for restricting movement and a plurality of suction holes 22 for attracting and holding the supported wafer W to the hand 3a are provided. Therefore, at the time of delivery, movement of the wafer W in the planar direction is regulated by the hold pins 11 of the support plate 2a and the hold pins 21 of the hands 3a. In addition, since the wafer W is sucked and fixed by each suction hole 22 of the hand 3a, more reliable delivery can be performed.

Moreover, the accommodating part 2 is equipped with the reinforcement member 12 which reinforces each support part 2a1 of the support plate 2a. The reinforcing member 12 is provided to cross each other in the extending direction of the supporting portion 2a1 so as to support each supporting portion 2a1 of the supporting plate 2a. Thereby, each support part 2a1 of the support plate 2a is reinforced by one member, and the support plate 2a is thinned, or each support part 2a1 of the support plate 2a is elongated thin and long. In this case, since the wafer W can be supported without being deformed, reliable delivery can be performed. As the case where the support plate 2a is thinned, a case where the number of sheets of the support plate 2a is increased by increasing the number of sheets of the support plate 2a without increasing the size of the housing portion 2 may be mentioned.

In addition, the drying unit 7 has a plurality of heater plates 101 on which the wafers W coated with an adhesive are disposed and which heat the wafers W in the arranged state, and the heater plates 101 are spaced apart from each other in a stacked state. The support part 102 which supports is provided. Thereby, the temporary drying by the drying part 7 is performed after application | coating of the adhesive agent by the application head 6c. This prevents uneven film thickness due to flow and bias of the liquid adhesive applied on the wafer W until the wafer W is conveyed to the curing apparatus of the subsequent process, thereby preventing dry unevenness of the adhesive. It becomes possible to suppress it. Therefore, even when using a liquid adhesive, the film thickness of the coating film by an adhesive agent can be made uniform. As a result, since a liquid adhesive can be used instead of an adhesive sheet, compared with the case where an adhesive sheet is used, the reduction of the material cost of an adhesive agent and the improvement of material use efficiency can be implement | achieved. Moreover, since it becomes possible to avoid the problem resulting from peeling and curling of an adhesive sheet, a high quality semiconductor device can be manufactured. In addition, it is possible to dry only one wafer W at a time in a space-saving manner, and shorten the manufacturing time during mass production while preventing the enlargement of the apparatus.

In addition, the drying unit 7 is spaced apart from each other by the contact state where the wafer W and the heater plate 101 contact each heater plate 101, and the wafer W and the heater plate 101 are separated by a predetermined distance. It is provided with a switching unit for switching the spaced state. Thereby, the wafer W is heated in either the contact state or the spaced state, and the drying conditions can be changed according to the adhesive material, the ambient temperature, or the like. For this reason, the dry unevenness of the adhesive agent for every wafer W resulting from the difference of the arrangement | positioning end of the wafer W is suppressed, and the film thickness of the coating film by an adhesive agent can be reliably uniform.

In addition, the switching unit includes a plurality of lift pins 101b for raising and lowering the wafer W disposed on the heater plate 101, and the drying unit 7 includes a temperature measuring device for measuring the temperature of the heater plate 101. do. According to the temperature measured by the temperature measuring device T, the stop position of each lift pin changes. As a result, since the separation distance between the heater plate 101 and the wafer W is adjusted, it becomes possible to control the amount of heat applied to the wafer W from the heater plate 101. In particular, it is possible to adjust the amount of heat applied to the wafer W faster than controlling the temperature of the heater plate 101. Thereby, since excessive heating and underheating of the wafer W are prevented, dry unevenness of the adhesive agent on the wafer W can be reliably suppressed, and the film thickness of the coating film by an adhesive agent can be made more uniform.

Moreover, by providing the irradiation part 5 which irradiates an ultraviolet-ray to the application | coating surface of the wafer W, and the application | coating part 6 which apply | coats an adhesive agent to the application | coating surface to which the ultraviolet-ray was irradiated, the application surface of the wafer W is modified and the wafer ( The adhesive is stably attached to the coated surface of W). For this reason, the adhesiveness of the application surface of the wafer W and an adhesive agent can be improved. As a result, since it becomes possible to use a liquid adhesive, compared with the case where an adhesive sheet is used, the reduction of the material cost of an adhesive agent and the improvement of material use efficiency can be implement | achieved. In addition, the adhesive sheet becomes unnecessary, and when the dicing tape is peeled off due to the improvement in the adhesion, the coating film of the adhesive is peeled off or dried together with the dicing tape. For this reason, the reliability of the bonding performance of the chip | tip diced and separated into the wafer W, the circuit board and other chip | tip which are the bonding object improves, and it can manufacture a high quality semiconductor device.

Moreover, the hand 3a which supports the wafer W and the conveyance part 3 which conveys the wafer W by the hand 3a are provided, and the irradiation part 5 moves by the conveyance part 3, Ultraviolet rays are irradiated onto the coated surface of the wafer W. FIG. For this reason, it becomes possible to adjust the accumulated light amount for surface modification by the operation of the hand 3a. For example, the hand 3a reciprocates the wafer W under the lamp 5a of the irradiation part 5. As a result, the wafer W passes through the bottom of the lamp 5a a total of two times, and the two passes ensure a predetermined amount of accumulated light required per unit area for surface modification. For this reason, the coating surface of the wafer W can be reliably modified, and an adhesive agent can be stably attached to the coating surface of the wafer W. As shown in FIG. In this manner, the coating quality of the wafer W can be improved, and as a result, a high quality semiconductor device can be manufactured.

In addition, the irradiation unit 5 includes a lamp 5a for generating ultraviolet rays, a sensor 5c serving as a detector for detecting the amount of ultraviolet light generated by the lamp 5a, and an ultraviolet ray detected by the sensor 5c. An adjusting unit (e.g., lamp movement driver 5b) for adjusting the amount of irradiation light to the coated surface of the wafer W based on the amount of light is maintained. For this reason, the irradiation light amount of UV light irradiated to the wafer W by the irradiation part 5 is maintained at a set value, and it is forbidden that the irradiation light amount fluctuates. And the surface modification with respect to the back surface (coating surface) of the wafer W can be reliably and stably performed. Therefore, it becomes possible to improve the coating quality of the wafer W, and as a result, a high quality semiconductor device can be manufactured reliably.

When the lamp movement driver 5b for adjusting the relative distance between the lamp 5a and the coated surface of the wafer W is used as the adjustment unit, the illuminance light amount can be adjusted with a simple configuration, and the control of the adjustment is easy. Can also be done correctly.

In addition, a plurality of droplets of the adhesive are directed toward the application area of the stage 6a in which the wafer W is disposed and heats the wafer W in the arranged state, and the wafer W in the arranged state heated by the stage 6a. The application head 6c which discharges is provided. For this reason, since the droplet which landed on the wafer W is sequentially dried by the heat supplied from the stage 6a, uniform drying of a droplet is implement | achieved. Therefore, even when a liquid adhesive is used, the flow of the adhesive such that the adhesive before drying flows on the wafer W during the conveyance to the drying apparatus or the like is suppressed, so that the coating film by the adhesive can be uniformly formed to a desired film thickness. have. As a result, since a liquid adhesive can be used instead of an adhesive sheet, compared with the case where an adhesive sheet is used, the reduction of the material cost of an adhesive agent and the improvement of material use efficiency can be implement | achieved. Moreover, since it becomes possible to avoid the problem caused by peeling and curling at the time of using an adhesive sheet, a high quality semiconductor device can be manufactured. In addition, as heating temperature, the temperature which inhibits the flow of an adhesive agent, for example, the temperature which accelerates vaporization of the solvent contained in an adhesive agent is used.

Moreover, the stage 6a is equipped with the heating stage 51 which has the some adsorption hole 51e for attracting the wafer W of the arrangement state, and the adsorption | suction of the arrangement state by adsorption by the adsorption hole 51e is carried out. The wafer W is brought into close contact with the heating stage 51 to be heated. For this reason, the droplet of the adhesive agent which landed on the wafer W rapidly increases in viscosity after an impact, and the flow is reliably suppressed. This prevents wet expansion of a plurality of droplets of the adhesive that are adhered to and integrated on the wafer W so as to form the film thickness of the coating film by the adhesive at a desired thickness and to achieve uniform film thickness. Can be realized more reliably.

Moreover, the coating head 6c which discharges an adhesive agent into several droplets toward the wafer W, the stage 6a by which the wafer W is arrange | positioned and which can move the lower side of the coating head 6c, and an application head The discharge stabilization part 6e for stabilizing the discharge of 6c is provided. The discharge stabilization part 6e cleans the discharge confirmation part 81 which image | photographs the droplet discharged from the application | coating head 6c, and confirms discharge, and the discharge surface of the application | coating head 6c, and makes it the leaked state. The wet part 82 and the discharge amount confirmation part 83 which confirms the total discharge amount of the coating head 6c are provided. By the discharge confirmation unit 81, the state of the coating head 6c is confirmed, and when there is a problem in that state, maintenance is performed, so that occurrence of discharge abnormality can be suppressed. In addition, the cleaning and wetting portion 82 prevents the adhesive adhering to the discharge surface of the coating head 6c from drying and becoming a coagulated product, thereby preventing the occurrence of discharge abnormality such as discharge bending. . By the discharge confirmation unit 83, the discharge amount of the droplet is confirmed, and when there is a problem in the discharge amount, maintenance is performed, so that occurrence of the discharge amount or more can be suppressed. From these, stable application of the liquid adhesive can be realized. As a result, it becomes possible to use a liquid adhesive instead of the adhesive sheet, so that the material cost of the adhesive can be reduced and the material use efficiency can be improved as compared with the case where the adhesive sheet is used. In addition, in applying the adhesive on the wafer W, since the discharge failure in which the adhesive is not discharged from the nozzle of the application head 6 is prevented, the droplet of the adhesive is applied to the position where the adhesive on the wafer W should be applied. It becomes possible to apply reliably. For this reason, a high quality semiconductor device can be manufactured.

Moreover, the discharge confirmation part 81 raises and lowers the imaging part 81a provided so that the droplet discharged from the application | coating head 6c, and the imaging part 81a to a retreat position and an imaging position (working position) may be carried out. The lifting and lowering drive portion 81b, the illuminating portion 81c for imaging, the receiving portion 81d which receives the droplet discharged from the application head 6c, and the illuminating portion 81c and the receiving portion 81d are the retracted position and the working position. An elevating drive unit 81e for elevating and lowering is provided. The cleaning wet part 82 includes a box-shaped container 82a of the upper opening, a wipe member 82b provided in the container 82a, a nozzle 82c for spraying a solvent on the wipe member 82b, and a container. The movement drive part 82d which performs the lifting movement of 82a, and the movement along the discharge surface is provided. The discharge amount confirming unit 83 includes a box-shaped case 83a having a shutter S that can be opened and closed, an electronic balance 83b for measurement, a measurement container 83c provided on the electronic balance 83b, and a shutter. The shutter drive part 83d which opens and closes (S) and the movement drive part 83e which moves the case 83a to the direction along a discharge surface are provided. According to such a structure, it becomes possible to switch between application | coating operation | movement and discharge stabilization operation | movement easily by movement of each part. In addition, since the discharged droplets and the sprayed solvent are also recovered, it becomes possible to prevent contamination of the apparatus. In addition, the measurement of the discharge amount is also performed in the case 83a without air flow or the like, so that accurate measurement with high accuracy can be performed. These are factors of reliable maintenance, and the stable application of the liquid adhesive can be realized more reliably.

The discharge confirmation unit 81 further includes a lift drive unit 81b for raising and lowering the imaging unit 81a to a retracted position and an imaging position (working position), and the illumination unit 81c and the receiving unit 81d to the retracted position and work. A lifting drive unit 81e for elevating to a position is provided. The imaging unit 81 is retracted by the elevating drive unit 81b to the retreat position set above the moving area of the stage 6a. The illuminating part 81c and the receiving part 81d are retracted by the elevating drive part 81e at the retreat position set below the moving area of the stage 6a. Occurs when the imaging unit 81a is retracted above the moving area of the stage 6a to discharge dust falling due to the movement of the stage 6a or the like or droplets of the adhesive from the nozzle of the coating head 6c. The falling mist and the like can be prevented from adhering to the lens or the like of the imaging unit 81a. For this reason, the reliability of discharge confirmation can be improved. In addition, when the receiving part 81d is retracted under the moving area of the stage 6a, even if the adhesive received at the receiving part 81d overflows from the receiving part 81d, it is being moved by the stage 6a. Falling on the wafer W can be prevented. For this reason, the quality improvement of the adhesive film formed in the application surface of the wafer W can be aimed at. As described above, by retreating the imaging section 81a and the receiving section 81d to different retreat positions, it is possible to improve the quality of the adhesive film formed on the coated surface of the wafer W while improving the reliability of the discharge confirmation. It becomes possible.

Moreover, the cleaning wet part 82 is equipped with the movement drive part 82d which moves the wipe member 82b with a container 82a, and moves up and down to a retreat position and a work position. The wipe member 82b is retracted by the lift driver 81e at a retracted position set below the moving area of the stage 6a. According to such a structure, even if the adhesive agent adhered to the wipe member 82b fell by removing the discharge surface of the application head 6c, the stage 6a is interposed between the wipe member 82b and the wafer W. As shown in FIG. For this reason, the adhesive agent falling from the wipe member 82b can be prevented from sticking to the wafer W reliably. In addition, poor adhesion and deterioration in the quality of the adhesive layer on the wafer W can be prevented as the adhesive adheres, which does not depend on the discharge from the nozzle of the coating head 6c.

In addition, the discharge amount confirmation unit 83 includes a movement driver 83e for moving the electronic balance 83b for measurement to the retreat position and the work position by the Y-axis movement. The electronic balance 83b is retracted by the movement driver 83e at the retreat position on the side of the movement region of the stage 6a. According to such a structure, the movement direction which moves between the some coating head 6c and the movement direction to a retreat position can be made to match at the time of discharge amount confirmation. For this reason, the apparatus structure can be simplified without the need for adding a special moving mechanism to the retraction of the electronic balance. Further, since the movement of the retracted position and the working position is only in the Y-axis direction along the horizontal direction, the electronic balance is prevented from being tilted with respect to the horizontal by the movement. For this reason, the fall of the measurement precision resulting from the tilting of the electronic balance with respect to the horizontal can be prevented as much as possible, and the discharge amount can be confirmed with high accuracy.

Moreover, the retreat position of the receiving part 81d of the discharge confirmation part 81 and the wipe member 82b of the cleaning wet part 82 is the movement direction of the stage 6a below the moving area of the stage 6a. It is set to be parallel to the X-axis direction. Specifically, the retracted position of the receiving portion 81d is set just below the application head 6c, and the retracting position of the wipe member 82b is the conveying portion 3 side with respect to the retracted position of the receiving portion 81d. It is set at a position adjacent to. Therefore, since the difference in the height direction between the receiving part 81d positioned at these retreat positions and the wipe member 82b can be eliminated as much as possible, the receiving part 81d below the moving area of the stage 6a and The height of the retraction space of the wipe member 82b can be reduced to the maximum. As a result, the size of the apparatus 1 can be reduced, and the height of movement of the stage 6a can be prevented from increasing, so that the conveyance height of the wafer W in the apparatus 1 can be lowered as a whole. The maintenance property of the whole apparatus is improved so that an operator can touch each part 2-7.

Moreover, the imaging part 81a, the illumination part 81c, the receiving part 81d, and the cleaning wetness of the discharge confirmation part 81 which have a length substantially the same as the arrangement length in the Y-axis direction of the some coating head 6c. The discharge amount confirming portion 83 having the Y-axis direction length smaller than the arrangement length in the Y-axis direction of the plurality of coating heads 6c with the retraction direction of the wipe member 82b of the portion 82 as the Z-axis direction. The retraction direction of the electronic balance 83b is set to the Y-axis direction. In addition, the retreat direction of the imaging unit 81a of the discharge confirmation unit 81 is the Z-axis upward direction, and the retreat direction of the illumination unit 81c and the receiving unit 81d is the Z-axis downward direction. Further, both the retreat direction of the illumination portion 81c and the receiving portion 81d of the discharge confirmation portion 81 and the retreat direction of the wipe member 82b of the cleaning and wetting portion 82 are set downward along the Z-axis, and both are retracted. It was arranged in parallel in the X-axis direction at the position. According to such a configuration, since only the electronic balance 83b having a relatively small length in the Y-axis direction is provided in the horizontal direction, the retraction space in the horizontal direction can be made extremely small. Moreover, since the illumination part 81c, the receiving part 81d, and the wipe member 82b which retreat in the Z-axis downward direction are located in parallel in a retreat position, the retraction space in the Z-axis direction can also be made extremely small. As a result, the space secured in the apparatus as the retracting space can be made as small as possible, thereby miniaturizing the apparatus.

In addition, this invention is not limited to embodiment mentioned above, A various change is possible in the range which does not deviate from the summary. For example, some components may be deleted from all the components shown in the above-described embodiment. Moreover, you may combine suitably the component leading to other embodiment. In addition, in the above-mentioned embodiment, although various numerical values are mentioned as an example, these numerical values are illustrations and are not limited.

For example, in the above-described embodiment, the drying unit 7 has been described as supporting the wafer W on the heater plate 101 to heat-dry the adhesive applied to the wafer W. However, the present invention is not limited thereto, and instead of the heater plate 101, a support plate for the wafer W is provided, and the adhesive is heated and dried by the supply of warm air, or the ambient temperature around the wafer W is changed to a heater or the like. It may be heated by heating means and dried by heating, or may be dried under reduced pressure by reducing the atmosphere around the wafer W.

In addition, in the above-mentioned embodiment, the application part 6 was demonstrated as apply | coating an adhesive agent, moving the application | coating head 6c and the wafer W relatively in the X-axis direction. However, the present invention is not limited thereto, and the adhesive may be applied while the wafer W is rotated within the horizontal plane under the plurality of application heads 6c arranged in a line shape.

In this case, an adhesive is applied to the wafer W on the stage 6a by the inkjet coating head 6c while rotating the stage 6a on which the wafer W is disposed. Although the structure of the coating part 6 is basically the same as the above-mentioned embodiment, the coating head 6c does not need to be arrange | positioned in the range which covers the length by the diameter of the wafer W (in the above-mentioned embodiment), The number of the coating heads 6c is seven), and what is necessary is just to arrange | position in the range which covers the length from the center to the outer periphery of the wafer W arrange | positioned at the stage 6a. However, similarly to the above-mentioned embodiment, you may arrange | position in the range which covers the diameter part of the wafer W. As shown in FIG.

Here, as the coating operation in the case where the coating head 6c is disposed in the range covering the diameter portion of the wafer W as in the above-described embodiment, the hand 3a is placed on the stage 6a positioned at the standby position. When the wafer W is placed, the stage transfer driver 6b is driven to place the stage directly below the center coating head 6c among the seven coating heads 6c in which the center of the wafer W is arranged. Move 6a in the X-axis direction. In this position, the adhesive is discharged from the nozzle of each coating head 6c while the stage 6a is rotated at a predetermined speed by the rotation driving unit 52 to apply the adhesive to the coating surface of the wafer W. FIG. When the application of the adhesive to the coated surface of the wafer W is completed, the rotation of the stage 6a is stopped in the direction of 0 ° (direction when the wafer W is supplied), and the stage 6a is driven by the stage conveyance drive unit. It moves to the standby position by drive of 6b. Application of the adhesive while rotating the wafer W is preferably applied in the case where beta coating is applied in which the adhesive is uniformly applied to the entire application surface of the wafer W.

In rotational application, the relative movement speed of the application surface of the wafer W and the application head 6c increases as the distance from the rotational center increases. For this reason, when adhesive agent is discharged from each nozzle of the seven application heads 6c by the same discharge amount and the same discharge period, the distribution of the droplet of the adhesive agent apply | coated to an application surface will become sparse so that the distance from a rotation center is far. Therefore, as the distance from the rotational center increases, the amount of adhesive discharged per unit time increases, so that control of the droplets of the adhesive on the coating surface becomes uniform. For example, the farther the nozzle is from the rotational center, the more the amount of adhesive discharged is controlled so as to control the discharge amount or the discharge period is reduced.

In particular, when the application head 6c is disposed in a range covering the diameter of the wafer W, the inner surface and the outer peripheral side of the rotation center side are made with the application surface of the wafer W bounded by a predetermined distance from the rotation center. It is divided into two regions of the outer region of. And application | coating of an adhesive agent to an inner side area | region is performed using the half nozzle located in the right side rather than a rotation center among the nozzles located facing an inner side area | region. In addition, about an outer side area | region, it performs using all the nozzles located facing an outer side area | region. By doing in this way, much adhesive agent can be apply | coated to the outer side area | region whose relative moving speed of an application | coating surface and an application head is quick compared with an inner side area | region.

Moreover, it is not limited to two area | regions, You may divide into three or more area | regions in the radial direction. In this case, the adhesive is discharged from all the nozzles for the nozzle located on the right side with respect to the center of rotation, and the adhesive is discharged within the group of nozzles facing the area farther from the center of rotation for the nozzle located on the left side. Control is performed so that the number of nozzles to be made increases. For example, in the case of dividing into three regions, control is performed so as not to discharge the adhesive from a group of a plurality of nozzles facing the inner region among the nozzles located on the left side with respect to the rotation center, and the nozzles facing the central region. The group of is controlled so as to discharge the adhesive from the nozzle every other, and the control is performed to discharge the adhesive from all the nozzles from the group of the nozzles facing the outer area.

In addition, the application head 6c may be provided so as to be horizontally rotatable with respect to the holding member 64a, and the application head 6c may be horizontally rotated in accordance with the distance from the rotation center. That is, in the vicinity of the rotation center, the coating head 6c is arranged so that the nozzle arrangement direction is along the Y axis direction, and as the distance from the rotation center becomes farther, the nozzle array direction crosses at a larger angle with respect to the Y axis direction. The application head 6c is rotated horizontally and disposed. By doing in this way, since the arrangement | positioning space | interval of a nozzle in a Y-axis direction decreases as the distance from a rotation center becomes farther, the arrangement | positioning space | interval in the radial direction of the droplet of an adhesive agent becomes dense as it goes to the outer periphery, and from each nozzle Even if the discharge amount per unit time of the adhesive agent is the same, it is possible to prevent the distribution of the droplets of the adhesive agent on the coated surface from becoming sparse on the outer peripheral side.

Moreover, it is also possible to apply | coat the adhesive agent by the application part 6 demonstrated in step 6 of above-mentioned embodiment as follows. That is, when the wafer W is a wafer W of a dicing fill or the like, and when the adhesive film is formed in a pattern having a shape (for example, a rectangular shape) and similar to each chip on the wafer W, Is applied in two steps.

First, in the first step, the adhesive is applied in one row or in a plurality of rows along the outer circumferential edge of the rectangular application area. That is, along the outer periphery of an application | coating area | region, application | coating is apply | coated at the space | interval such that each adjacent thing overlaps with one part, and forms the frame by an adhesive agent. The adhesive frame may be formed by one row of droplets or may be formed in two or more rows of widths. At this time, the temperature of the heating stage 51 in the stage 6a starts drying of the droplet of the adhesive which hit the wafer W immediately at the whole of the droplet, and the high temperature which suppresses the wet expansion of the droplet here. By setting to, the frame of the adhesive, that is, the frame-like adhesive layer, in which the height close to the application height of the droplets of the adhesive at the time of impacting is maintained can be formed along the outer periphery of the application region.

In the first step, when the frame-like adhesive layer is formed, the coating operation of the droplets of the adhesive is repeatedly performed on the outer circumferential edge of the application region, and the adhesive is further deposited on the droplets of the adhesive already applied and the drying is started. The droplets may be formed by overlapping a plurality of times to obtain a height (thickness) required for the adhesive layer formed in the application region.

In addition, although the droplets of an adhesive agent were apply | coated so that it might overlap in one part, you may apply | coat so that the droplets of an adhesive agent may separate | separate by a predetermined distance first, and may fill in between droplets by subsequent application | coating.

Next, the droplet of an adhesive agent is apply | coated sequentially to the area | region inside of the frame-shaped adhesive bond layer formed in the 1st process in the 2nd process. At this time, the temperature of the heating stage 51 in the stage 6a is set to a temperature lower than that of the first step, and the droplets of the adhesive that have landed on the wafer W have higher wet expandability than the first step. do. By doing in this way, the droplet of the adhesive agent apply | coated this time becomes easy to match with the frame-type adhesive bond layer formed in the 1st process, and the adhesive bond layer integrated with the frame adhesive layer can be formed.

In this case, since the external shape of the adhesive bond layer formed by the frame adhesive bond layer is prescribed | regulated, it can prevent that an adhesive bond layer protrudes from the application | coating area | region on a chip | tip. Therefore, even when an adhesive agent is apply | coated to the wafer W of a dicing fill etc., an adhesive sticks out to a dicing groove and it is prevented from apply | coating. As a result, the problem that adjoining chips are adhere | attached by the adhesive which protruded is prevented, and generation | occurrence | production of the defective article resulting from it can be prevented. For this reason, productivity can be improved and it is suitable.

Also in the case of applying beta to the entire surface of the wafer W, in the same manner as described above, in the first step, a frame-like adhesive layer is formed along the outer circumferential edge of the coating area on the wafer W, In a 2nd process, you may make it apply | coat an adhesive agent to the area | region inside of a frame-shaped adhesive bond layer.

Moreover, the control part 8 which controls the heating temperature of the wafer W by the stage 6a, and discharge of the adhesive agent by the application | coating head 6c is provided, The control part 8 is equipped with the wafer by the stage 6a. You may make it switch the heating temperature of (W) according to the application | coating position of the adhesive agent with respect to the application | coating area | region on the wafer W by the application | coating head 6c. Thereby, even if the heating temperature of the wafer W by the stage 6a changes with the place inside the surface of the stage 6a, it becomes possible to suppress the dry unevenness resulting from the temperature nonuniformity. Thereby, since the droplet is made to dry uniformly, the uniformity of the film thickness of the coating film by an adhesive agent can be realized more reliably.

In particular, the control part 8 performs the application | coating head 6c so that application | coating of the adhesive agent to the application | coating area | region on the wafer W may be divided into application | coating to the outer peripheral edge and application | coating to the area | region inside the outer peripheral edge. When controlling the discharge of the adhesive to apply the adhesive to the outer circumferential edge, the heating temperature of the wafer W by the stage 6a may be controlled to be higher than when the adhesive is applied to the inner region of the outer circumferential edge. good. Thereby, it becomes possible to form the frame of the adhesive, ie, the frame-like adhesive layer, whose height close to the application height of the droplets of the adhesive at the time of impacting is formed along the outer periphery of the application region. For this reason, the drying of the droplet of the adhesive which landed on the wafer W starts immediately in the whole of the droplet, and can suppress the wet expansion of the droplet here. As a result, desired film thickness and uniformity of the film thickness of the coating film by an adhesive agent can be realized more reliably.

Claims (10)

As a manufacturing apparatus of a semiconductor device,
An application head for discharging the adhesive toward the application object with a plurality of droplets;
A stage on which the application object is disposed and which can move the lower side of the application head;
A cleaning unit for cleaning the discharge surface of the application head;
A first moving drive unit for moving the cleaning unit to a work position for cleaning the discharge surface of the coating head, a retreat position set below the moving area of the stage and avoiding interference with the stage;
A discharge amount confirmation unit for confirming a discharge amount of the droplets discharged from the application head,
The discharge amount confirmation unit,
Electronic balance for the measurement,
A measuring container provided on the electronic balance;
And a second movement driver for moving the electronic balance to a working position for receiving the droplet discharged from the coating head to the measuring container and a retracted position set to the side of the moving area of the stage. According to claim 1, The cleaning unit,
A wipe member having hygroscopicity,
A nozzle for spraying a solvent on the wipe member
And,
The manufacturing apparatus of the semiconductor device which makes said coating head wet by cleaning the discharge surface of the said coating head with the said wipe member sprayed with the said solvent. The apparatus of claim 2, wherein the nozzle is fixedly disposed at a retracted position. The liquid crystal display device according to claim 1, further comprising a discharge confirmation unit for performing discharge confirmation of the droplets discharged from the application head,
The discharge confirmation unit,
An imaging unit provided to capture the droplets discharged from the application head;
A first lift drive unit for moving the image pickup unit to a work position for imaging the droplet discharged from the coating head and to a retracted position set above the moving area of the stage;
The manufacturing apparatus of the semiconductor device which comprises. The method of claim 4, wherein the discharge confirmation unit,
A receiving part receiving the droplets discharged from the application head;
A second lift drive unit for lifting and lowering the receiving unit to a work position for receiving the droplet discharged from the application head and to a retracted position set below the moving area of the stage.
An apparatus for manufacturing a semiconductor device, further comprising. The said stage is provided so that the movement to a direction along one direction of a horizontal direction is possible,
The coating head is made of a plurality of arranged along the direction crossing the movement direction of the stage,
The imaging section is made in a plurality of arrangement corresponding to the plurality of coating heads,
And the first lift drive unit collectively moves the plurality of imaging units to the working position and the retracted position. delete According to claim 1, The stage is provided to be movable in a direction along one direction of the horizontal direction,
The coating head is made of a plurality of arranged along the direction crossing the movement direction of the stage,
And the second moving driver is disposed above the plurality of coating heads along an arrangement direction of the plurality of coating heads, and receives and supports the electronic balance. The said stage is equipped with the heater which heats the said application | coating object arrange | positioned, and heats the said application | coating object, discharges from the said application | coating head, and applies the viscosity of the said adhesive agent of the droplet form apply | coated to the said application object. The manufacturing apparatus of the semiconductor device which is to increase. The method of claim 9, further comprising a control unit for controlling the heating temperature by the heater,
When applying the adhesive by dividing the application area on the application object into an outer circumferential area and a central area inside the outer circumferential area, the controller controls the application of the adhesive to the outer circumferential area and when applying the adhesive to the central area. An apparatus for manufacturing a semiconductor device, wherein the heater is controlled so that the temperature at the time of coating on the outer peripheral region is increased.

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