KR101254825B1

KR101254825B1 - Process of Fabricating Thin Film Pattern

Info

Publication number: KR101254825B1
Application number: KR1020050129319A
Authority: KR
Inventors: 이보현; 채기성
Original assignee: 엘지디스플레이 주식회사
Priority date: 2005-12-26
Filing date: 2005-12-26
Publication date: 2013-04-15
Also published as: KR20070067875A

Abstract

A thin film pattern manufacturing method suitable for producing a thin film having a pattern of the required shape is disclosed.

In the thin film pattern manufacturing method, the mask film which determines the shape of a pattern is printed on the board | substrate with which the thin film was formed in the surface. After the surface layer of the thin film exposed between the mask films is removed, an aqueous nanoparticle solution is applied to the surface of the thin film exposed by the mask. The nanoparticle film pattern is formed by removing the liquid component of the nanoparticle aqueous solution thus applied.

As a result, an excess space is provided above or below the region where the predetermined thin film pattern is formed to expand the receiving space of the aqueous nanoparticle solution. As a result, a thin film pattern can be formed which keeps the required width uniformly.

Pattern, thin film, nano, hydrophilic, hydrophobic, SAMs, printing

Description

Process of Fabricating Thin Film Pattern

BRIEF DESCRIPTION OF THE DRAWINGS For a better understanding of the drawings used in the detailed description of the invention, a brief description of each drawing is provided.

1A to 1D are cross-sectional views illustrating a method of manufacturing a thin film pattern for an integrated circuit according to an exemplary embodiment of the present invention.

2A to 2C are cross-sectional views illustrating a method of manufacturing a thin film pattern for an integrated circuit according to another exemplary embodiment of the present invention.

3A to 3D are cross-sectional views illustrating a method of manufacturing a thin film pattern for an integrated circuit according to still another embodiment of the present invention.

DESCRIPTION OF THE REFERENCE NUMERALS to the main parts of the drawings "

10 substrate 12 first thin film

12A: groove 14, 20: mask film

16,22,30: nanoparticle aqueous solution 16A, 22A, 30A: nanoparticle

18,24,32: Nanoparticle Membrane Pattern

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the fabrication of device substrates on which devices are mounted, and more particularly to a method of manufacturing a thin film pattern for the implementation of devices on a substrate or preformed thin film.

Conventional integrated circuit chips, such as memory and central processing units, include transistors, capacitors, inductors, resistors and wiring, etc., which are configured to form electrical circuits on semiconductor substrates. Similarly, flat panel panels such as organic EL panels and liquid crystal panels include transistors, capacitors, wirings, and the like formed to constitute an electrical circuit on a glass substrate. As such, circuit elements and wirings formed on the semiconductor substrate and the glass substrate are implemented by at least one thin film pattern.

Conventional thin film patterns are formed on semiconductor substrates, glass substrates or other thin films by a photolithographic technique. Photolithography not only requires mask and exposure equipment but also complicates the process until the thin film pattern is formed. For this reason, the thin film pattern manufacturing method by the photolithography method consumes a lot of cost, time and effort.

In order to solve the shortcomings of the thin film pattern manufacturing method using the photolithography method, a thin film pattern manufacturing method using a soft lithographic technique has been proposed. According to the method for manufacturing a thin film pattern of the soft lithographic technique, a hydrodropic pattern is printed on a semiconductor substrate, a glass substrate, or a preformed thin film. An aqueous nanomaterial solution (or paste) is evaporated or coated on the substrate or thin film exposed by the hydrophobic pattern. The deposited nanomaterial aqueous solution is dried to form a thin film pattern of the nanomaterial. The method of manufacturing a thin film pattern by the nanomaterial solution (or dough) allows the mask and exposure equipment to be removed, and of course, the process, time and effort are greatly reduced.

However, the thin film pattern of nanomaterials produced by this soft lithographic method of thin film pattern manufacturing has pinholes located along the centerline or with narrower widths and irregular edges than those defined by the hydrophobic pattern. . This is due to the concentration of the nanomaterial particles toward the middle wire or the edge depending on the method of drying the nanomaterial solution (or half-group). In view of this, there is a need for a method of manufacturing a thin film pattern by a soft lithographic technique suitable for producing a thin film pattern having a predetermined width.

Accordingly, it is an object of the present invention to provide a thin film pattern manufacturing method suitable for manufacturing a thin film pattern of a predetermined form.

According to one or more exemplary embodiments, a method of manufacturing a thin film pattern includes: preparing a substrate having a thin film formed on a surface thereof; Printing a mask film on the thin film to determine the shape of the pattern; Removing the surface layer of the thin film exposed by the mask film; Applying an aqueous nanoparticle solution to the surface of the thin film exposed by the mask; And removing the liquid component of the nanoparticle aqueous solution to form a nanoparticle film pattern.

It is preferable that the thin film is formed of a material having hydrophilicity and the mask film is made of a material having hydrophobicity.

The thin film may be used to form an insulating film and the thin film pattern may be used to form wiring.

In the step of removing the surface layer of the thin film, it is preferable that the surface layer of the thin film is etched about 1/4 to 1/3 of the thickness of the thin film.

More preferably, the thin film is formed to have a thickness of about 2 to 3 μm and the surface layer of the thin film is removed by about 0.4 to 0.7 μm.

According to another aspect of the present invention, there is provided a method of manufacturing a thin film pattern, the method comprising: printing a mask film determining a shape of a pattern on a substrate; Removing the surface layer of the substrate exposed by the mask film; Applying an aqueous nanoparticle solution to the surface of the substrate exposed by a mask; And removing the liquid component of the nanoparticle aqueous solution to form a nanoparticle film pattern.

It is preferable that the substrate is formed of a material having hydrophilicity and the mask film having a hydrophobic material.

The thin film pattern may be used to form any one of a diffusion region of a transistor and a separation layer separating the elements.

According to still another aspect of the present invention, there is provided a method of manufacturing a thin film pattern, comprising: preparing a substrate having a thin film formed on a surface thereof; Printing a first mask film on the thin film to determine the shape of the pattern; Printing a second mask film on the first mask such that an edge of the second mask film adjacent to the pattern is exposed; Applying an aqueous nanoparticle solution to the surface of the thin film exposed between the second mask and the edge of the second mask film; And removing the liquid component of the nanoparticle aqueous solution to form a nanoparticle film pattern.

The thin film pattern manufacturing method may further include removing the surface layer of the thin film exposed by the first mask film before the nanoparticle aqueous solution is applied.

According to still another aspect of the present invention, there is provided a method of manufacturing a thin film pattern, the method comprising: printing a first mask film determining a shape of a pattern on a substrate; Forming a second mask film on the first mask film such that an edge of the first mask film adjacent to the pattern is exposed; Applying an aqueous nanoparticle solution to a surface of the substrate exposed between a second mask and an edge of a first mask film; And removing the liquid component of the nanoparticle aqueous solution to form a nanoparticle film pattern.

The method of manufacturing the thin film pattern may further include removing the surface layer of the substrate exposed by the first mask film before applying the nanoparticle aqueous solution.

According to the configuration as described above, the method for manufacturing a thin film pattern according to the present invention provides an excess space in the upper or lower portion of the formation region of the predetermined thin film pattern to expand the receiving space of the nanoparticle aqueous solution. Accordingly, the thin film pattern manufacturing method according to the present invention is to form a thin film pattern to maintain a predetermined width uniformly. Furthermore, in the method for manufacturing a thin film pattern according to the present invention, redundant spaces are provided in both the upper and lower portions of the region where the predetermined thin film pattern is formed so that the receiving space of the aqueous nanoparticle solution is further expanded. As a result, the method for manufacturing a thin film pattern according to the present invention not only maintains a predetermined width uniformly, but also allows a solid thin film pattern to be formed.

Other objects, other advantages, and other features of the present invention in addition to the above objects will become apparent from the detailed description of the embodiments to be described in detail in conjunction with the accompanying drawings.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1A to 1D are cross-sectional views illustrating a method of manufacturing a thin film pattern according to an exemplary embodiment of the present invention.

In FIG. 1A, a substrate 10 having a surface on which a first thin film 12 and a mask film 14 are laminated is shown. As the substrate 10, a wafer on which an integrated circuit is to be formed and a glass substrate on which pixel cells of a flat panel display panel are to be formed may be used.

The first thin film 12 is used as an insulating film for insulating the substrate and the conductive film to be formed thereon. For example, the first thin film 12 may be positioned on the source and drain of the thin film transistor used as the switch element of the pixel cell, or under the transparent electrode, or under the gate and data wiring. To this end, the first thin film 12 is formed of silicon nitride (Sin) to a thickness of at least 2-3㎛. In addition, the first thin film 12 may be formed thicker than 2 ~ 3㎛ to provide a flat surface.

The mask film 14 allows a planar shape of the pattern thin film to be formed on the first thin film 12, that is, a thin film pattern to be designed. For this purpose, the mask film 14 is prepared by printing the mask material. The surface of the first thin film 12 in the region where the thin film pattern is located is exposed by the mask film 14.

Referring to FIG. 1B, the surface layer of the first thin film 12 exposed by the mask film 14 is etched by a wet or dry etching process to allow the recess 12A to be formed on the first thin film 12. . The recessed portion 12A increases the volume of the thin film pattern set by the mask film 14. In other words, the recess 12A creates a surplus space by itself. The depth of the recess 12A is about 3/1 to 4/1 as compared to the thickness of the first thin film 12 so as not to affect the role or function of the first thin film 12. Preferably, the recess 12A is preferably formed to a depth of 0.5 ~ 0.8㎛. While the surface layer of the first thin film 12 is etched, the mask film 14 also functions as an etch barrier. Therefore, the mask film 14 is preferably formed of a material that is not removed by the etching solution or the etching gas.

As shown in FIG. 1C, the nanoparticle aqueous solution (or paste) 16 is applied to the recess 12A in an ink-jet manner. The nanoparticles contained in the aqueous nanoparticle solution 16 include nano-silica, nano-indium-tin-oxide, nano-silver, and nano-conductor having conductive properties. It may be any one of nano metal particles such as copper (Nano-Cu), nano-titanium oxide (Nano-TiO), nano-aluminum oxide (Nano-AlO) and nano-cesium oxide (Nano-Cso).

The nanoparticle aqueous solution 16 may be applied so as to have a cross-sectional shape inflated higher than the surface of the mask film 14. For this purpose, the first thin film 12 preferably has hydrophilic surface properties and the mask film 14 has hydrophobic surface properties. Accordingly, the first thin film 12 is preferably formed of silicon nitride (Sin) having hydrophilicity and insulation properties, and the mask film 14 has a hydrophobic surface characteristic and an etching barrier function and is applied by a printing method. Self-Assembled Nonolayers are preferred where possible. This self-assembled monomolecular film may be formed by any of alkanoic acid, organosulfur and organosilicon.

The nanoparticle aqueous solution 16 applied to the recess 12A exposed by the mask film 14 is dried to form a nanoparticle film pattern 18, as shown in FIG. 1D. In detail, as the moisture contained in the nanoparticle aqueous solution 16 between the mask films 14 is evaporated, the liquid component condenses toward the surface of the first thin film 14 so that the nanoparticles 16A may also be formed in the first thin film ( By gathering around the surface of 14, the nanoparticle film pattern 18 is formed firmly. This is due to the increase in the amount (ie, volume) of the nanoparticle aqueous solution 16 applied on the first thin film 12 between the mask films 14 by the recesses 12A. The nanoparticle film pattern 18 may form data lines, scan lines, and common electrodes as well as wires and pads in the case of flat panel displays.

Alternatively, the first thin film 12 in FIGS. 1A-1D may be removed. In other words, the mask film 14 and the nanoparticle film pattern 18 may be formed directly on the substrate 10 instead of the first thin film 12. In this case, the nanoparticle film pattern 18 may be formed of nano semiconductor particles or nano insulating material particles. The nanoparticle film pattern 18 of nano semiconductor particles forms a diffusion region of a transistor, and the nanoparticle film pattern 18 of nano insulating material particles separates a circuit element (for example, a transistor). It is used as an insulating film for device classification.

As described above, the method for manufacturing a thin film pattern according to the embodiment of the present invention further generates an extra space in which the nanoparticle aqueous solution is accommodated by the recess 12A, so that the thin film pattern of the nanoparticles maintaining the required width uniformly. To be manufactured.

2A through 2C are cross-sectional views illustrating a method of manufacturing a thin film pattern according to another exemplary embodiment of the present disclosure. The method of manufacturing the thin film pattern shown in FIGS. 2A to 2C uses the second mask film 20 instead of the process of forming the recessed portion 12A in the method shown in FIGS. 1A to 1D. Accordingly, components in FIGS. 2A-2C having the same configuration, role or function as those in FIGS. 1A-1D will be referred to by the same reference numerals as FIGS. 1A-1D. In addition, detailed descriptions of components overlapping with those of FIGS. 1A to 1D will be omitted.

2A illustrates a substrate 10 in which a first thin film 12, a first mask layer 14, and a second mask 20 are sequentially stacked. The first mask film 14 corresponds to the mask film in FIG. 1A and determines the shape of the exposed surface of the first thin film 12. The second mask film 20 increases the volume of the pattern forming region determined by the first mask film 14. In other words, the second mask film 20 further provides a surplus space above the pattern formation region. To this end, the second mask film 20 may be formed in the same manner as the first mask film 14 but may be adjacent to the inner edge of the first mask film 14 (that is, adjacent to the exposed surface of the first thin film 12). The edge of the first mask film 14) is formed to be exposed. The width of the edge of the first mask film 14 exposed by the second mask film 20 is set to about 3 to 10 m. Preferably, the edge of the first mask film 14 is exposed by a width of 4 ~ 7㎛ that can be completely exposed by the condensation of the liquid component when the nanoparticle aqueous solution is dried.

Referring to FIG. 2B, nanoparticles may be formed on the edge of the first mask layer 14 exposed by the second mask layer 20 and the surface of the first thin film 12 exposed by the first mask layer 14. The nanoparticle aqueous solution 22 containing 22A is apply | coated by the ink-jet method. The nanoparticles 22A included in the nanoparticle aqueous solution 22 may be any one of the same nanometal particles as included in the nanoparticle aqueous solution 22 in FIG. 1C. Therefore, the nanoparticles 22A included in the nanoparticle aqueous solution 22 form a conductive pattern through a drying process.

In addition, the nanoparticle aqueous solution 22 has a cross-sectional shape inflated higher than the surface of the first mask film 14. For this purpose, the second mask film 20, like the first mask film 14, preferably has a hydrophobic surface property and is formed of a self-assembled monomolecular film suitable for printing by a printing method. Therefore, the second mask film 20 may be formed of any one of alkanoic acid, organosulfur and organosilicon.

The aqueous nanoparticle solution 22 located on the edge of the first mask film 14 exposed by the second mask film 20 and on the exposed surface of the first thin film 12 is dried, as shown in FIG. 2C. The nanoparticle film pattern 24 is formed. In detail, as the moisture contained in the nanoparticle aqueous solution 22 between the second mask films 20 evaporates, the liquid component condenses toward the surface of the first thin film 14 so that the nanoparticles 22A may also be first. By gathering around the surface of the thin film 12, the nanoparticle film pattern 24 that exposes the edge of the first mask film 14 is firmly formed. This is due to the increase in the amount (ie, volume) of the nanoparticle aqueous solution 22 applied to the exposed surface of the first thin film 12 between the first mask films 14 by the second mask film 20. . The nanoparticle film pattern 24 may form data lines, scan lines, and common electrodes as well as wires and pads in the case of a flat panel display panel.

Alternatively, the first thin film 12 in FIGS. 2A-2C may be removed. In other words, the first mask film 14 and the nanoparticle film pattern 24 may be formed directly on the substrate 10 instead of the first thin film 12. In this case, the nanoparticle film pattern 24 may be formed of nano semiconductor particles or nano insulating material particles. The nanoparticle film pattern 24 made of nano-semiconductor particles forms a diffusion region of the transistor, and the nanoparticle film pattern 24 made of nano-insulating material particles separates circuit elements (eg, transistors). It is used as an insulating film for device classification.

Alternatively, the first and second masks 14 and 20 in FIGS. 2A-2C may be formed by one ink-jet printing process of the same material. Furthermore, the edges of the first and second mask films 14 and 20 adjacent to the exposed surface of the first thin film 12 may be formed to be inclined.

As described above, in the method of manufacturing a thin film pattern according to another embodiment of the present invention, a nano space for maintaining a predetermined width uniformly by generating an excess space by the second mask film 20 on the mask film that determines the shape of the pattern. Allows thin film patterns of particles to be produced.

3A to 3D are cross-sectional views illustrating a method of manufacturing a thin film pattern according to still another embodiment of the present invention. The manufacturing method shown in FIGS. 3A to 3D further includes a step of forming the recessed portion 12A as compared to the method shown in FIGS. 2A to 2C. Accordingly, the components in FIGS. 3A-3D having the same configuration, role and function as shown in FIGS. 2A-2C will be referred to by the same numerals.

In FIG. 3A, similarly to the substrate in FIG. 2A, the substrate 10 formed on the surface of the first thin film 12, the first mask film 14, and the second mask film 20 is stacked. The first and second mask films 14 and 20 are also used as etch barrier materials. As in FIG. 2A, the second mask film 20 exposes the inner edge of the first mask film 14 by a width of about 3 to 10 μm (preferably, 4 to 7 μm). The volume amount of the pattern formation region determined by 14) is first expanded. In other words, the second mask film 20 further provides a first surplus space above the pattern formation region.

The surface layer of the first thin film 12 exposed by the first mask film 14 is etched by a certain thickness, as shown in FIG. 3B, so that the recessed portion 12A is formed. This recessed portion 12A has a pattern on the first thin film 12 in which the second mask film 20 is formed to have the same depth and is exposed by the first mask film 14, similarly to the recessed portion in FIG. 1B. The volumetric amount of the formation region is expanded secondarily. In other words, the recess 12A provides a second surplus space by itself in the lower portion of the pattern formation region.

Referring to FIG. 3C, an aqueous nanoparticle solution (or paste) 30 including nanoparticles on the edge of the first mask film 14 including the recess 12A is ink-jet. ) Is applied in a manner. The nanoparticles 30A included in the nanoparticle aqueous solution 30 may be any one of the same nanometal particles as included in the nanoparticle aqueous solution 16 in FIG. 1C. Therefore, the nanoparticles 30A included in the nanoparticle aqueous solution 22 form a conductive pattern through a drying process.

In addition, the nanoparticle aqueous solution 30 has a cross-sectional shape inflated higher than the surface of the second mask film 14. For this purpose, the second mask film 20, like the first mask film 14, is preferably formed of a self-assembled monomolecular film having hydrophobic surface characteristics and an etching preventing function and suitable for printing by a printing method. . Therefore, the second mask film 20 may be formed of any one of alkanic acid, organosulfur, and organosilicon.

The aqueous nanoparticle solution 22 located on the edge of the first mask film 14 exposed by the second mask film 20 and on the exposed surface of the first thin film 12 is dried and the nanos as shown in FIG. 3D. Particle film pattern 32 is formed. In detail, as the moisture contained in the nanoparticle aqueous solution 30 between the second mask film 20 is evaporated, the liquid component condenses toward the surface of the first thin film 14 so that the nanoparticles 30A may also be first. By gathering around the surface of the thin film 12, the nanoparticle film pattern 32 which exposes the edge of the first mask film 14 is firmly formed. This is because the amount (ie, volume) of the nanoparticle aqueous solution 16 applied to the exposed surface of the first thin film 12 between the first mask films 14 is reduced to the second mask film 20 and the recesses 12A. Due to the effect of double expansion. The nanoparticle film pattern 32 may form data lines, scan lines, and common electrodes as well as wires and pads in the case of a flat panel display panel.

Alternatively, the first thin film 12 in FIGS. 3A-3D may be removed. In other words, the first mask film 14 and the nanoparticle film pattern 32 may be directly formed on the substrate 10 instead of the first thin film 12. In this case, the nanoparticle film pattern 32 may be formed of nano semiconductor particles or nano insulating material particles. The nanoparticle film pattern 32 made of nano semiconductor particles forms a diffusion region of a transistor, and the nanoparticle film pattern 32 made of nano insulating material particles separates a circuit element (eg, a transistor). It is used as an insulating film for device classification.

Alternatively, the first and second mask films 14 and 20 in FIGS. 3A-3D may be formed of the same material by one ink-jet printing process. Furthermore, the edges of the first and second mask films 14 and 20 adjacent to the exposed surface of the first thin film 12 may be formed to be inclined.

As described above, the method of manufacturing a thin film pattern according to still another embodiment of the present invention requires an excess space by the second mask film 20 above the mask film that determines the shape of the pattern and a lower portion of the pattern formation space. The excess space by the groove portion 12A is created in duplicate. As a result, a thin film pattern of nanoparticles having a predetermined width is uniformly manufactured.

As described above, the method for manufacturing a thin film pattern according to the present invention provides an excess space in the upper or lower portion of the region where the predetermined thin film pattern is formed, thereby expanding the receiving space of the aqueous nanoparticle solution. Accordingly, the thin film pattern manufacturing method according to the present invention is to form a thin film pattern to maintain a predetermined width uniformly. Furthermore, in the method for manufacturing a thin film pattern according to the present invention, redundant spaces are provided in both the upper and lower portions of the region where the predetermined thin film pattern is formed so that the receiving space of the aqueous nanoparticle solution is further expanded. Accordingly, the method for manufacturing a thin film pattern according to the present invention not only maintains a predetermined width uniformly, but also allows a solid thin film pattern to be formed.

As described above, the present invention has been described in connection with the embodiments shown in the drawings, which are merely exemplary, and a person of ordinary skill in the art without departing from the spirit and scope of the present invention. It will be apparent that various modifications, changes, and equivalent other embodiments are possible. Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims.

Claims

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Providing a substrate having a thin film formed on a surface thereof;

Printing a first mask film on the thin film to determine a shape of a pattern;

Printing a second mask film on the first mask such that an edge of a second mask film adjacent to the pattern is exposed;

Removing the surface layer of the thin film exposed by the first mask film;

Applying an aqueous nanoparticle solution to the surface of the thin film and the edge of the second mask film between the second masks; And

Removing the liquid component of the nanoparticle aqueous solution to form a nanoparticle film pattern.

The method of claim 10, wherein the thin film is formed of a hydrophilic material and the first and second mask films are formed of a hydrophobic material.

The method of claim 10, wherein the thin film forms an insulating film and the thin film pattern forms a wiring.

The method of claim 10, wherein the removing the surface layer of the thin film causes the surface layer of the thin film to etch 1/4 to 1/3 of the thickness of the thin film.

The method of claim 13, wherein the thin film is formed to a thickness of 2 to 3 μm and the surface layer of the thin film is removed by 0.4 to 0.7 μm.

Printing a first mask film on the substrate to determine the shape of the pattern;

Forming a second mask film on the first mask film such that an edge of the first mask film adjacent to the pattern is exposed;

Removing the surface layer of the substrate exposed by the first mask film;

Applying an aqueous nanoparticle solution to a surface of the substrate exposed between the second mask and an edge of the first mask film; And

The method of claim 15, wherein the substrate is formed of a hydrophilic material and the first and second mask films are formed of a hydrophobic material.

The method of claim 15, wherein the thin film pattern forms any one of a diffusion layer separating transistors and elements.

The method of claim 17, wherein the removing the surface layer of the substrate removes the surface layer of the thin film by 0.4 to 0.7 μm.

Providing a substrate having a thin film formed on a surface thereof;

Printing a first mask film on the thin film to determine a shape of a pattern;

20. The method of claim 19, wherein the thin film is formed of a hydrophilic material and the first and second mask films are formed of a hydrophobic material.

20. The method of claim 19, wherein the thin film forms an insulating film and the thin film pattern forms a wiring.

20. The method of claim 19, wherein removing the surface layer of the thin film causes the surface layer of the thin film to etch 1/4 to 1/3 of the thickness of the thin film.

The method of claim 22, wherein the thin film is formed to a thickness of 2 to 3 μm and the surface layer of the thin film is removed by 0.4 to 0.7 μm.

25. The method of claim 24, wherein the substrate is formed of a hydrophilic material and the first and second mask films are made of a hydrophobic material.

25. The method of claim 24, wherein the thin film pattern forms any one of a diffusion region of a transistor and a separator separating the elements.

The method of claim 26, wherein removing the surface layer of the substrate removes the surface layer of the thin film by 0.4 to 0.7 μm.