KR101245379B1 - Manufacturing method of azo firm for touch panel by ultraviolet irradation - Google Patents

Abstract

The present invention relates to a method for forming a transparent conductive film for a touch panel, and an object of the present invention is to form a transparent conductive film for a touch panel on a glass substrate through a coating by physical vapor deposition (PVD), and then irradiated with ultraviolet rays to finally form The present invention provides a method for forming a transparent conductive film for a touch panel for forming a transparent conductive film for a touch panel. To this end, the present invention comprises the steps of depositing ZnO on a glass substrate by an RF magnetron-sputtering method to form a transparent conductive film; And forming an AZO thin film for a touch panel by irradiating ultraviolet rays to the transparent conductive film. The ZnO is doped with ₃ Wt% of Al ₂ O _{3 based} on the total weight of ZnO; The transparent conductive film is deposited on a glass substrate so as to have a thickness of 1000 증착 at a deposition rate of 0.2 에서 / sec in a low temperature process at 150 ° C, and the ultraviolet irradiation of the transparent conductive film is irradiated with a light amount of ultraviolet light at 250 eV for 10 minutes. do.

Description

MANUFACTURING METHOD OF AZO FIRM FOR TOUCH PANEL BY ULTRAVIOLET IRRADATION}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a display, and more particularly, to a method of manufacturing a AZO thin film for a touch panel by ultraviolet irradiation after laminating a ZnO thin film on a glass substrate.

Transparent conductive films used as transparent electrodes of display devices such as touch panels, plasma display panels (PDPs), and liquid crystal displays (LCDs) are used for physical vapor deposition or chemical vapor deposition (CVD) in vacuum. It can be formed as. In particular, sputtering, ion plating, and electron beam evaporation using indium tin oxide (ITO), aluminum zine oxide (AZO) or antimony tin oxide (ATO) targets Various physical methods (PVD) have been applied, and they are mainly used to form transparent conductive films having a small sheet resistance of 20 Ω / Å or less, and sputtering methods are most commonly used.

On the other hand, according to the sputtering method, there is a big difference in conductivity, transparency, and surface roughness of the transparent conductive film, and the direct current magnetron sputtering method is preferred.

Currently, a transparent conductive film having a sheet resistance of 400 Ω / 투명 to 500 Ω / Å is mainly used as a transparent electrode used in a resistive touch screen, which is manufactured by a sputtering method.

1 is a flowchart illustrating a method of forming a transparent conductive film for a conventional touch panel.

That is, according to the conventional method for forming a transparent conductive film for a touch panel, the transparent conductive film is applied onto a glass substrate through a physical vapor deposition method (PVC) or the like (10), and then heat treated (20). As described above, sputtering or the like is used as the physical vapor deposition method.

On the other hand, the heat treatment temperature for forming a transparent conductive film having good crystallinity is preferably 600 ° C. or higher (Thin solid films, 411 (2002) 56-59, 515 (2007) 3797-3801).

However, in general, considering that the softening temperature of the glass substrate is 530 ° C. or lower, the glass substrate is deformed during the heat treatment of the transparent conductive film, and thus the heat treatment temperature should be lowered. There is a problem of becoming poor.

An object of the present invention for solving the above problems is to form a transparent conductive film for a touch panel on a glass substrate through a coating by physical vapor deposition (PVD), and then irradiated with ultraviolet rays to finally form the AZO thin film for a touch panel. In order to provide a AZO thin film manufacturing method for a touch panel by ultraviolet irradiation.

In order to achieve the above object, the present invention comprises the steps of depositing a transparent conductive film by depositing ZnO on a glass substrate by an RF magnetron-sputtering method; And forming an AZO thin film for a touch panel by irradiating ultraviolet rays to the transparent conductive film. The ZnO is doped with ₃ Wt% of Al ₂ O _{3 based} on the total weight of ZnO; The transparent conductive film is deposited on a glass substrate so as to have a thickness of 1000 증착 at a deposition rate of 0.2 에서 / sec in a low temperature process at 150 ° C, and the ultraviolet irradiation of the transparent conductive film is irradiated with a light amount of ultraviolet light at 250 eV for 10 minutes. do.

The present invention forms a transparent conductive film by depositing ZnO doped with ₃ Wt% Al ₂ O _{3 based} on the total weight of ZnO on a glass substrate by RF magnetron-sputtering method, and finally irradiating ultraviolet rays to form an AZO thin film for a touch panel. By forming, it has the outstanding effect that the AZO thin film for touch panels excellent in physical property can be manufactured.

1 is a flow chart of an embodiment of a method of forming a transparent conductive film for a conventional touch panel.
2 is a flow chart of an embodiment of a method for forming an AZO thin film for a touch panel according to the present invention;
Figure 3 is a graph showing the sheet resistance measurement results according to the irradiation amount of the thin film after ultraviolet irradiation by the AZO thin film forming method for a touch panel according to the present invention.
Figure 4 is an image photograph showing the AFM data after ultraviolet irradiation by the AZO thin film forming method for a touch panel according to the present invention.
Figure 5 is a SEM image by the AZO thin film forming method for a touch panel according to the present invention.

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

2 is a flowchart illustrating a method of forming an AZO thin film for a touch panel according to the present invention, and a process for forming the AZO thin film for a touch panel is illustrated.

A transparent conductive film for a touch panel is formed on a substrate by physical vapor deposition (PVD) or chemical vapor deposition (CVD) as described above.

On the other hand, the present invention is particularly applied to the process of forming a transparent conductive film using a physical vapor deposition method, for this purpose, the present invention first performs a pretreatment process of forming a transparent conductive film using a physical vapor deposition method on a glass substrate (100) ). Here, physical vapor deposition (PVD) is a deposition without a chemical reaction, means a deposition method using an evaporator (Evaporator), a sputter (Sputter) and the like.

Thereafter, the present invention performs a post-treatment process of irradiating ultraviolet rays to the transparent conductive film formed through the above process using an ultraviolet irradiator, thereby finally forming an AZO thin film for a touch panel (200).

That is, the present invention relates to a method for manufacturing an AZO thin film for a touch panel by ultraviolet irradiation (UV-Irradiation), the coating of a transparent conductive film on a glass substrate by physical vapor deposition (PVD) through the pre-treatment process (100) Thereafter, by post-treatment of the transparent conductive film by ultraviolet UV-curing and Irradiation method through the post-treatment process 200, it has a feature that can form an AZO thin film excellent in physical properties.

In detail, the present invention can change the physical properties and properties of the thin film by manufacturing the electrode for the touch panel by the ultraviolet irradiation method, it is possible to control the change in the optical characteristics by using the ultraviolet irradiation method (UV-Irradiation) It is possible to adjust the static band gap, to control the surface roughness and to change the physical properties such as garinsize, and to improve the low charge mobility of the thin film by using the UV-Irradiation method.

In the following, the results of the inspection, carried out for the verification of the properties of the AZO thin film for a touch panel formed according to the present invention, are described.

3 is a graph showing the sheet resistance measurement results according to the irradiation amount of the thin film after ultraviolet irradiation by the AZO foil forming method for a touch panel according to the present invention, Figure 4 is a UV irradiation after the AZO foil forming method for a touch panel according to the present invention It is an image photograph showing the AFM data, Figure 5 is a SEM image photograph by the AZO foil forming method for a touch panel according to the present invention.

두께로 증착된 AZO/GLASS 박막의 표면의 변화 및 물성의 변화를 관찰하고, 터치패널용 AZO 박을 제조하기 위해 PVD 코팅 후 자외선 조사 방법(UV-Irradiation)으로 이온에너지를 조사한 뒤, 투명도전막의 형태의 상관관계를 조사하였다. 여기서, 자외선 조사 방법(UV-Irradiation)에서 조사된 광량이온에너지는 100eV~350eV 범위에서 조사되었으며, 광량에너지의 변화에 따른 AZO 박막의 물성과 특성을 관찰하였다. In order to verify the characteristics of the AZO foil for the touch panel formed through the present invention described above, 1000 by PVD method

Observe the surface changes and physical properties of the AZO / GLASS thin film deposited to a thickness, and irradiate ion energy by UV-Irradiation after PVD coating to manufacture the AZO foil for touch panel. Form correlations were investigated. Here, the photocationic energy irradiated by UV-irradiation (UV-Irradiation) was irradiated in the range of 100 eV to 350 eV, and the physical properties and characteristics of the AZO thin film according to the change of the light quantity energy were observed.

As a result of the characteristic test, the properties of the thin film were changed according to the irradiation amount of UV-Irradiation light quantity, and the UV-Irradiation light quantity was more significant than the thin film which was not irradiated with ion energy. In order to know these results, correlations were observed in the amount of energy irradiation through analytical methods such as XRD, SEM, AFM, and UV-VISIBLE, and the increase in the volume ratio of the surface according to the amount of UV light and the ratio of grain size Therefore, the possibility for the touch panel of the AZO thin film was confirmed.

Specific test method for the characteristic test of the transparent conductive film for a touch panel formed by the present invention is as follows.

The first inspection process is a process of forming a transparent conductive film on the substrate through the pretreatment process described above. That is, the ZnO thin film, which is one of the transparent conductive films, was grown on the glass substrate for the property test, and at this time, an RF magnetron-sputtering method, which is one of physical vapor deposition (PVD), was used. Here, the source of the target was a ZnO target doped with Al ₂ O ₃ 3%. An alkali free glass substrate was used as a substrate for growing the thin film. The washing sequence of the substrate was first washed with TCE, acetone, ethanol, methanol, and distilled water for 10 minutes, and finally, the substrate was washed with de-ionized water for 10 minutes and blown with nitrogen. In the deposition of the ZnO thin film, 2 sccm of high purity argon gas (99%) was blown into the chamber for 5 minutes, and the plasma discharge current was fixed at 100 Kw and deposited. The deposition rate of the ZnO thin film on the amorphous substrate was 0.2 sec / sec through a thickness monitor using a quartz diaphragm, and the ZnO thin film was deposited on the monitor until the thickness of 1000 Å was measured. I was.

The second inspection process is a process of measuring physical properties after irradiating ultraviolet rays to the transparent conductive film formed in the first inspection process through the post-treatment process described above. That is, the amount of light was changed from 50 eV to 350 eV by using UV-curimg equipment on the transparent conductive film formed by physical vapor deposition, and UV-Irradiation irradiation was performed for 10 minutes, and then the physical properties of the thin film were examined. The crystallinity of the thin film was observed with an X-ray diffractor (RINI / DAX 2500), and the field scanning microscope FE-SEM (Marker: Hitachi S-4200) was used to observe the shape of the surface and cross section of the thin film. Field-Emission Scanning Electron Microscopy (AFM) was used, and AFM (Atomic Force Microscopy (PSI)) was used to observe the shape of the surface. In addition, the deposited thin films were examined for their electrical characteristics using van der pauw 4-point measurement.

로 하였다. Meanwhile, analyzers such as Haze meters (HM-150, MCRL, Japan) and UV-VISIBLE, XRD, SEM, and AFM were used for specific analysis. The thin film thickness of the transparent conductive film was 1000

It was set as.

In the case where the UV irradiation time is 10 minutes, the irradiation light amount and range and transmittance measurement values of UV-Irradiation are shown in Table 1 below.

In addition, the surface resistance measurement results according to the irradiation amount of the thin film after UV irradiation is as shown in Figure 3, the image photograph showing the AFM data after the ultraviolet irradiation is shown in Figure 4, the SEM image is shown in Figure 5 As shown.

As described above, in order to verify the properties of the AZO thin film for the touch panel formed by the present invention, a ZnO thin film doped with Al ₂ O ₃ (3wt%) is deposited on the glass substrate by RF magnetron-sputtering method at 150 ° C. low temperature process. At the same time, AZO optical crystal structure, microstructure, and surface shape were analyzed while changing ion energy using UV-irradiation. The results are as follows.

First, as a result of UV irradiation by UV-irradiation method, AZO thin film showed a large dependence on the energy of ions and was affected by the increase of surface mobility and defects according to the ion irradiation concentration. As the ion energy increased, it changed to fine grain formation, and when the ion energy (ultraviolet radiation dose) was 225 eV, the microstructure having the domain structure of the thin film and the control of the surface roughness appeared. The small surface roughness showed light transmittance by controlling the scattering of the surface, but as the energy of the ion beam increased, the domain structure was destroyed and converted into a microstructure. This may be represented by the microstructure of the grain according to the damage of the ion beam.

Second, according to the 10-minute irradiation result of UV-Irradiation, if the ion energy is 225 eV, the possibility of the AZO thin film for touch panel having a light transmittance of 85% or more and a sheet resistance of 98 to 12-Ω / a Seemed.

That is, through the results as described above, it can be seen that the AZO thin film manufacturing method for a touch panel according to the present invention has excellent performance when the UV irradiation time is 5 minutes to 10 minutes (5 minutes in the characteristic test). It was found that the best performance when the amount of light is maintained at 50eV ~ 350eV (especially 250eV).

On the other hand, the heat treatment process applied in the post-treatment process of the conventional transparent conductive film forming method for the touch panel, it was difficult to control the surface roughness, the present invention using the ultraviolet irradiation method, the surface roughness according to the irradiation light amount And it has the advantage that it can be changed in various ways by controlling the particle size. For example, looking at the SEM photograph of Figure 5, it can be seen that the size of the particle size is different. In other words, when the amount of UV radiation is appropriate, the particle size increases due to the increase in the mobility of atoms, and when the intensity of the radiation amount increases, the particle size decreases. The loss of damage results in nucleation of new particles, which results in new formation of particles and the formation of many grains, resulting in smaller particles and an increase in grain boundaries, resulting in reduced electron mobility.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Therefore, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification, but should be defined by the claims.

Claims (5)

Depositing ZnO on a glass substrate by an RF magnetron-sputtering method to form a transparent conductive film; And
Irradiating ultraviolet rays to the transparent conductive film to form an AZO thin film for a touch panel;
The ZnO is doped with ₃ Wt% of Al ₂ O _{3 based} on the total weight of ZnO;
The transparent conductive film is deposited on a glass substrate to a thickness of 1000 Å at a deposition rate of 0.2 Å / sec in a low temperature process of 150 ℃,
Ultraviolet irradiation of the transparent conductive film is a method of manufacturing an AZO thin film for a touch panel by ultraviolet irradiation, characterized in that for 10 minutes to irradiate the amount of ultraviolet light at 250eV. delete delete delete delete

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