KR101164368B1 - Light emitting diode package and method for fabricating the same - Google Patents

Abstract

A light emitting diode package and a method of manufacturing the same are provided. The light emitting diode package includes a package substrate, a plurality of single wavelength LED packages disposed on the package substrate, the light emitting diode chip and a wavelength conversion material layer disposed on the light emitting diode chip, and emitting different wavelength light. And a common spectral converting material mixture layer disposed on the LED package group and converting a light source emitted from the light emitting diode chip into common spectral pseudo light, wherein the LED package group includes the common spectral similarity. Single wavelength LED packages that emit light in the excess wavelength range for light.

Light Emitting Diode Package, Solar Single Source Light, Full Spectrum

Description

Light emitting diode package and method for manufacturing same

The present invention relates to a light emitting diode, and more particularly, to a light emitting diode package and a manufacturing method thereof.

In life, the sun can identify things and provide the human body with necessary elements, making it one of the essential resources. However, in the evening, the supply of sunlight is cut off and artificial lighting is used. Conventionally, incandescent or fluorescent lamps are used as such artificial lighting.

Artificial lighting such as incandescent or fluorescent lamps have a disadvantage in that efficiency is low due to problems such as high power, heat generation, and short lifespan. Therefore, there is a need for an alternative artificial lighting apparatus that can solve the above problems and emit light similar to the single-day sunlight.

The technical problem to be solved by the present invention is to solve the problems such as high power, heat generation and short life, and to provide a light emitting diode package and a method of manufacturing the same that can secure light similar to sunlight.

Technical problems of the present invention are not limited to the technical problems mentioned above, and other technical problems not mentioned will be clearly understood by those skilled in the art from the following description.

In order to achieve the above technical problem, an aspect of the present invention provides a light emitting diode package. The light emitting diode package includes a package substrate, a plurality of single wavelength LED packages disposed on the package substrate, the light emitting diode chip and a wavelength conversion material layer disposed on the light emitting diode chip, and emitting different wavelength light. And a common spectral converting material mixture layer disposed on the LED package group and converting a light source emitted from the light emitting diode chip into common spectral pseudo light, wherein the LED package group includes the common spectral similarity. Single wavelength LED packages that emit light in the excess wavelength range for light.

The light emitting diode package may further include an encapsulation layer disposed between the LED package group and the common spectrum conversion material mixed layer. The single wavelength LED package may be a device emitting violet, indigo blue, blue, green, yellow, orange or red wavelength light. The light emitting diode chip may be a device emitting light having a wavelength of 430 nm or less.

The package substrate may be a package lead frame or a package premold frame, and the package substrate may further include a housing having a cavity therein.

Another aspect of the present invention provides a light emitting diode package to achieve the above technical problem. The light emitting diode package includes a package substrate, a plurality of single wavelength LED packages disposed on the package substrate, the light emitting diode chip and a wavelength conversion material layer disposed on the light emitting diode chip, and emitting different wavelength light. And a common spectral LED package disposed on the package substrate other than a region in which the LED package group is disposed, the common spectral LED package emitting common spectral pseudo light, wherein the LED package group includes the common spectral pseudo light. Single wavelength LED packages that emit light in the excess wavelength range.

The common spectrum LED package includes a common spectrum light emitting diode chip and a common spectrum wavelength conversion material mixture layer disposed on the common spectrum light emitting diode chip and converting a light source generated from the common spectrum light emitting diode chip into a common spectrum pseudo light. can do.

In order to achieve the above technical problem, an aspect of the present invention provides a light emitting diode package manufacturing method. The method of manufacturing a light emitting diode package includes a package substrate, a light emitting diode chip on the package substrate, and a wavelength converting material layer disposed on the light emitting diode chip, the plurality of single wavelength LED packages emitting different wavelength light. Forming an LED package group including, mixing the wavelength conversion material for converting the light source emitted from the light emitting diode chip into a common spectrum pseudo-light, and coating the wavelength conversion material on the LED package group, common spectrum And forming a converting material mixture layer, wherein the LED package group includes single wavelength LED packages that emit light in an excess wavelength range for the common spectrum pseudo light.

The light emitting diode package manufacturing method may further include forming an encapsulation layer on the LED package group before forming the common spectrum converting material mixed layer. The common spectrum converting material mixed layer may be formed using a blade coating method, a screen printing method, a dip coating method, a dotting method, a spin coating method, a spray method, or an inkjet printing method.

Another aspect of the present invention provides a light emitting diode package manufacturing method for achieving the above technical problem. The light emitting diode package manufacturing method includes a package substrate, a light emitting diode chip on the package substrate, and a wavelength converting material layer disposed on the light emitting diode chip, and includes a plurality of single wavelength LED packages emitting different wavelength light. Forming a common spectral LED package emitting common spectral pseudo light on the package substrate outside the region where the LED package group is disposed, wherein the LED package group is the common package; Single wavelength LED packages that emit light in the excess wavelength band for spectral pseudo light.

The common spectrum LED package may include forming a common spectrum light emitting diode chip, and converting a common spectrum wavelength converting material mixed layer converting a light source emitted from the common spectrum light emitting diode chip into a common spectrum pseudo light on the common spectrum light emitting diode chip. It may comprise the step of forming.

As described above, by providing a common spectrum wavelength converting material mixed layer in the light emitting diode package, a common spectrum similar light source common to the singlet solar light is obtained, and then the intensity of the single wavelength LED package is variously changed to allow various types of singlet solar light. The pseudo light source can be easily implemented.

In addition, the problem of the conventional artificial lighting can be solved by using a light emitting diode having low heat generation, low power consumption, and long lifespan.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described herein but may be embodied in other forms. Rather, the embodiments disclosed herein are provided so that the disclosure can be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the thicknesses of layers and regions are exaggerated for clarity. Like numbers refer to like elements throughout.

1A to 1D are cross-sectional views illustrating a method of manufacturing a light emitting diode package according to an embodiment of the present invention.

Referring to FIG. 1A, a package substrate 10 is provided. The package substrate 10 may be a package lead frame or a package pre-mold frame. The package substrate 10 may include a bonding pad (not shown). The bonding pads may contain Au, Ag, Cr, Ni, Cu, Zn, Ti, Pd, and the like. External connection terminals (not shown) connected to the bonding pads may be disposed on an outer portion of the package substrate 10. The bonding pads and the external connection terminals may be those provided in the lead frame.

In addition, the package substrate 10 may further include a housing 12 having a cavity 12a therein. In this case, some of the bonding pads may be exposed in the cavity 12a. The housing 12 may be formed of silicon, metal, ceramic, or resin. In addition, the housing 12 may be formed by a molding method, or may be formed by a method of forming a housing layer on the package substrate 10 and then patterning the housing layer.

The package substrate 10 and the housing 12 may be integrally separated from each other. In this case, the package substrate 10 and the housing 12 may be injection molded integrally with the bonding pads therebetween.

Referring to FIG. 1B, an LED package group 20, preferably having at least four single wavelength LED packages 22, 24, 26, 28 emitting different wavelengths of light on the package substrate 10. Is an LED package group 20 having seven single wavelength LED packages emitting different wavelengths of light. Specifically, the seven single wavelength LED packages may be devices emitting violet, indigo blue, blue, green, yellow, orange or red wavelength light, respectively. If the LED package group 20 includes four single wavelength LED packages 22, 24, 26, 28, the LED package group 20 may emit at least blue, green, orange and red wavelength light. It may include emitting elements.

The single-wavelength LED packages 22, 24, 26, 28 have respective light emitting diode chips 22a, 24a, 26a, 28a having a first cladding layer, a second cladding layer and an active layer interposed therebetween. It can be provided. The first clad layer may be a semiconductor layer in which a first type impurity is implanted, for example, an n type impurity. The n-type impurity may be Si or N, B, P and the like. The second clad layer may be a semiconductor layer implanted with a second type impurity, that is, a p-type impurity. The p-type impurity may be Mg or N, P, As, Zn, Li, Na, K, Cu and the like. The active layer may have a quantum dot structure or a multi quantum well structure.

The light emitting diode chips 22a, 24a, 26a, and 28a emit light when electrons and holes recombine when an electric field is applied between the first cladding layer and the second cladding layer. The light emitting diode chips 22a, 24a, 26a, and 28a may be any one of AlGaAs, InGaAs, AlGaInP, AlGaInPAs, GaN, and ZnO.

The light emitting diode chips 22a, 24a, 26a, and 28a may be horizontal devices in which both n and p electrodes are formed on an upper surface, or vertical devices in which n and p electrodes are formed on upper and lower surfaces, respectively. It may be a vertical device.

The light emitting diode chips 22a, 24a, 26a, and 28a may emit a single wavelength of purple, indigo blue, green, yellow, orange, or red, or may emit short wavelength light of 430 nm or less, such as blue or UV. Can be.

If the light emitting diode chips 22a, 24a, 26a, and 28a are elements emitting short wavelength light, the light emitting diode chips 22a, 24a, 26a, and 26a may be disposed on the light emitting diode chips 22a, 24a, 26a, and 28a. Each of the wavelength converting material layers 22b, 24b, 26b, and 28b may be disposed to convert the light emitted from 28a into wavelengths of other regions. The wavelength conversion material layers 22b, 24b, 26b, and 28b may be blue conversion materials when the wavelength light emitted from the LED packages 22, 24, 26, and 28 are blue, green, orange, or red, respectively. Layer, green conversion material layer, orange conversion material layer or red conversion material layer.

As an example, the blue conversion material layer is Sr (PO) Cl: Eu, SrMgSiO: Eu, BaMgSiO: Eu, BaMgAlO: Eu, SrPO: Eu, SrSiAlON: phosphor layer or tapping such as Eu (Fe ₄ [Fe (CN ₆ ] ₃ ), pigment layers such as cobalt blue (CoO-Al ₂ O ₃ ).

The green conversion material layer is BaSiO: Eu, SrSiO: Eu, SrAlO: Eu, SrAlO: Eu, SrGaS: Eu, SrSiAlON: Eu, (Ca, Sr, Ba) SiNO: Eu, YSiON: Tb, YSiON: Tb, GdSiON : Phosphor layer of Tn or chromium oxide (Cr ₂ O ₃ ), chromium hydroxide (Cr ₂ O (OH) ₄ ), basic copper acetate (Cu (C ₂ H ₃ O ₂ ) -2Cu (OH) ₂ ), cobalt It may be a pigment layer such as green (Cr ₂ O ₃ -Al ₂ O ₃ -CoO).

The orange conversion material layer may be SrGa ₂ S ₃ : Pb, the red conversion material layer is a sulfide-based, nitride-based phosphor layer or iron oxide (Fe ₂ O ₃ ), lead tetraoxide (Pb ₃ O ₄ ), It may be a pigment layer such as mercury sulfide (HgS). The sulfide phosphor may be SrS: Eu or CaS: Eu, and the nitride phosphor is SrSiN: Eu, CaSiN: Eu, CaAlSiN, (Ca, Sr, Ba) SiN: Eu, LaSiN: Eu or Sr-α- SiAlON.

Referring to FIG. 1C, an encapsulation layer 14 filling the inside of the cavity 12a is formed on the LED package group 20 and the exposed package substrate 10. The encapsulation layer 14 may serve to protect and encapsulate the LED package group 20. The encapsulation layer 14 may be a translucent resin layer. As an example, the encapsulation layer 14 may be an epoxy resin layer or a silicone resin layer.

Referring to FIG. 1D, a common spectral wavelength converting material mixture layer 16 is formed on the encapsulation layer 14 to convert a light source emitted from the light emitting diode chips 22a, 24a, 26a, and 28a into a common spectrum like light source. do. Here, the common spectral light source may represent spectral light of a wavelength band that the various types of singlet solar spectrums have in common.

2 is a graph showing relative intensities of wavelengths in the single-day solar spectrum.

1D and 2, the single-day solar spectrum is D50 (5000K), D55 (5500K), D60 (6000K), D65 (6500K), D70 (7000K), D75 (7500K), D80 (8000K), D100 10000K, D150 (15000K), and D200 (20000K).

The common spectrum wavelength conversion material mixed layer 16 may be formed by mixing at least four different types of wavelength conversion materials. Specifically, the common spectrum wavelength conversion material mixed layer 16 may be formed by mixing at least blue, green, orange, and red conversion materials. In this case, the wavelength converting materials may be mixed so as to correspond to the ratio of the spectrum of each wavelength band in the common spectrum light.

As an example, the common spectral light has a maximum relative intensity in the blue, green, orange and red wavelength bands of about 80, 100, 70, and 60, respectively. In this case, each of the wavelength conversion material layers used in the common spectrum wavelength conversion material mixed layer 16 is 80, 70, and 60 relative light amounts, respectively, as the blue, orange, and red conversion materials, respectively, with respect to the 100 reference light quantity ratio of the green conversion material. Rain may be added.

The spectral spectral wavelength conversion material mixed layer 16 may be formed using the encapsulation layer 14 using a wet coating method such as a blade coating method, a screen printing method, a dip coating method, a dotting method, a spin coating method, a spray method, or an inkjet printing method. It can form on a phase.

When an electric field is applied to the LED package manufactured as described above, light emitted from the LED chips 22a, 24a, 26a, and 28a, for example, a part of UV may be emitted from the LED chips 22a, 24a, The wavelength is converted by the respective wavelength converting material layers 22b, 24b, 26b, and 28b disposed on 26a and 28a, and the remaining part of the light emitted from the light emitting diode chips 22a, 24a, 26a and 28a. The wavelength may be converted by the common spectrum wavelength conversion material mixed layer 16 disposed on the LED package group 20.

At this time, the type of the single wavelength LED packages 22, 24, 26, 28 and the concentration of the wavelength conversion materials contained in each of the single wavelength LED packages 22, 24, 26, 28, or single wavelength LED packages By varying the operating current of (22, 24, 26, 28), the amount of light in each single wavelength band exceeded in the common spectrum pseudo light can be adjusted.

As a result, it is possible to compensate the amount of light exceeding the wavelength of the common spectrum similar light with the light emitted from the single wavelength LED packages 22, 24, 26, 28, so as to secure various types of single-layered solar similar light source Can be enabled.

Here, when the light of the wavelength band emitted from the single wavelength LED packages 22, 24, 26, 28 is adjusted to the concentration of the wavelength conversion materials in the single wavelength LED packages 22, 24, 26, 28, The amount of light in the wavelength band emitted from the single wavelength LED packages 22, 24, 26, and 28 may be proportional to the concentration of the wavelength conversion materials. That is, when the concentration of the wavelength converting material is increased, the amount of single-layered sunlight-like light finally emitted may be increased, and when the concentration of the wavelength converting materials is decreased, the amount of light of the single-layered solar light is reduced. have.

3 is a cross-sectional view illustrating a structure of a light emitting diode package according to another embodiment of the present invention. Except for the following description, it is the same as the light emitting diode described with reference to FIGS. 1A to 1D.

Referring to FIG. 3, the LED package according to another embodiment of the present invention does not have a separate encapsulation layer (14 of FIG. 1D), and the LED package group 20 and the exposed package substrate 10 on the LED package group 20. A common spectrum wavelength converting material mixed layer 16 filling the cavity 12a of FIG. 1B may be located.

In this case, the common spectrum wavelength converting material mixed layer 16 not only converts light sources emitted from the light emitting diode chips 22a, 24a, 26a, and 28a into common spectrum pseudo light, but also the LED package group 20. It may serve as an encapsulation layer to protect and encapsulate.

4 is a cross-sectional view illustrating a structure of a light emitting diode package according to another embodiment of the present invention. Except for the following description, it is the same as the light emitting diode described with reference to FIGS. 1A to 1D.

Referring to FIG. 4, the light emitting diode package according to another embodiment of the present invention emits common spectrum pseudo light without forming a separate common spectrum wavelength converting material mixed layer 16 on the LED package group 20. The common spectrum LED package 30 may be manufactured and disposed on the package substrate 10.

Specifically, the common spectrum LED package 30 may include a common spectrum light emitting diode chip 32 having a first cladding layer, a second cladding layer, and an active layer interposed therebetween. The light emitting diode chip 32 may be any one of AlGaAs, InGaAs, AlGaInP, AlGaInPAs, GaN, and ZnO.

The common spectrum light emitting diode chip 32 may be a device emitting short wavelength light. Specifically, the common spectrum LED chip 32 may be a device that emits light having a wavelength of 430 nm or less. For example, the LED chip 32 may be a device that emits blue light or UV light.

A common spectral wavelength converting material mixture layer 34 may be disposed on the common spectrum light emitting diode chip 32 to convert light emitted from the common spectrum light emitting diode chip 32 into common spectrum like light. The method of manufacturing the common spectrum wavelength converting material mixed layer 34 is the same as the method of manufacturing the common spectrum wavelength converting material mixed layer 16 described with reference to FIG. 1D.

5 is a schematic diagram showing a spectrum of a light emitting diode package according to an embodiment of the present invention.

For example, in order to implement the D65-like light source, the light emitting diodes described with reference to FIGS. 1A to 1D and the light emitting diode package described with reference to FIGS. 3 and 4 may be used. However, hereinafter, a method of manufacturing a light emitting diode package that emits a single solar like light source of D65 using the light emitting diode package described with reference to FIG. 4 will be described.

4 and 5, as the common spectrum wavelength conversion material mixed layer 34 disposed on the common spectrum light emitting diode chip 32 to implement the D65-like light source, with respect to the reference ratio of green light 100 to the green conversion material 100. The blue, orange, and red converting materials may be mixed in 80, 70, and 60 relative light quantity ratios, respectively.

In addition, wavelength conversion materials included in the blue LED package 22, the green LED package 24, the orange package 26, and the red packages 28 as the LED package group 20 may be converted into the common spectrum wavelength conversion. 40, 10, 5, and 5 relative light amount ratios may be added to the green light conversion material 100 reference light ratios contained in the material mixture layer 16, respectively.

As a result, a portion of the light source generated by the light emitting diode chips 22a, 24a, 26a, and 28a is converted into a wavelength band by the common spectrum wavelength conversion material mixed layer 16, so that the common band as shown in FIG. Spectral-like light can be emitted, and at the same time the remaining portion of the light source generated by the light emitting diode chips 22a, 24a, 26a, 28a is controlled by the wavelength converting material layers 22b, 24b, 26b, 28b. Can be converted to emit respective single wavelength lights as shown in FIG.

Therefore, the light emitting diode according to the present invention having the LED group 20 and the common spectrum LED package 30 at the same time has a combination of the common spectrum pseudo light source and single wavelength light, as shown in FIG. It can emit a light source similar to the singlet sunlight of D65.

As described above, a common spectrum wavelength converting material mixture layer is provided in the light emitting diode to secure a common spectrum similar light source common to the singlet solar light, and then various amounts of light are generated by varying the wavelength band generated from single wavelength LED packages. It is simple to implement a light source similar to a kind of singlet sunlight.

By using this method, it is easy to use sunlight-like light in the room as a lighting, and it is possible to apply a light source suitable for each environment in a studio, a painting room, a living room, a bedroom, a study room, a department store, an art gallery or an exhibition hall. In addition, the problem of the conventional artificial lighting can be solved by using a light emitting diode having low heat generation, low power consumption, and long lifespan.

As mentioned above, the present invention has been described in detail with reference to preferred embodiments, but the present invention is not limited to the above embodiments, and various modifications and changes may be made by those skilled in the art within the spirit and scope of the present invention. You can change it.

1A to 1D are cross-sectional views illustrating a method of manufacturing a light emitting diode package according to an embodiment of the present invention.

2 is a graph showing relative intensities of wavelengths in the single-day solar spectrum.

3 is a cross-sectional view illustrating a structure of a light emitting diode package according to another embodiment of the present invention.

4 is a cross-sectional view illustrating a structure of a light emitting diode package according to another embodiment of the present invention.

5 is a schematic diagram showing a spectrum of a light emitting diode package according to an embodiment of the present invention.

Claims (13)

A package substrate; An LED package group disposed on the package substrate, the LED package group including a light emitting diode chip and a wavelength converting material layer disposed on the light emitting diode chip, the plurality of single wavelength LED packages emitting different wavelength light; And A common spectral wavelength converting material mixture layer disposed on the LED package group and mixing blue, green, orange, and red wavelength converting materials so as to correspond to a relative intensity ratio of each wavelength band of the common spectrum pseudo light, The common spectrum pseudo light has a relative intensity in the blue, green, orange, and red wavelength bands of 85% to 95%, 95% to 105%, respectively, when the maximum relative intensity of 5000K single sunlight is 100%. 75% to 85% and 70% to 80% light, The LED package group includes a single wavelength LED package for emitting light in a wavelength band exceeding the amount of light in a portion of the wavelength band of the common spectrum pseudo light. The method of claim 1, The LED package further comprises an encapsulation layer disposed between the LED package group and the common spectrum conversion material mixed layer. The method of claim 1, The single wavelength LED package is a light emitting diode package that emits purple, indigo blue, blue, green, yellow, orange or red wavelength light. The method of claim 1, The light emitting diode chip is a light emitting diode package that emits light of wavelength less than 430nm. The method of claim 1, The package substrate is a light emitting diode package is a package lead frame or a package pre-molded frame. 5. The method of claim 4, The package substrate further comprises a housing having a cavity therein. A package substrate; An LED package group disposed on the package substrate, the LED package group including a light emitting diode chip and a wavelength converting material layer disposed on the light emitting diode chip, the plurality of single wavelength LED packages emitting different wavelength light; And Comprising a common spectrum LED package disposed in parallel with the LED package group on the package substrate, The common spectrum LED package is disposed on the common spectrum light emitting diode chip and the common spectrum light emitting diode chip that emit light having a wavelength of 430 nm or less, and corresponds to the relative intensity ratio of each wavelength band of common spectrum pseudo light. A common spectrum wavelength converting material mixture layer comprising red wavelength converting materials mixed therein; The common spectrum pseudo light has a relative intensity in the blue, green, orange, and red wavelength bands of 85% to 95%, 95% to 105%, respectively, when the maximum relative intensity of 5000K single sunlight is 100%. 75% to 85% and 70% to 80% light, The LED package group includes a single wavelength LED package for emitting light in a wavelength band exceeding the amount of light in a portion of the wavelength band of the common spectrum pseudo light. delete A package substrate; Forming an LED package group having a light emitting diode chip and a wavelength converting material layer disposed on the light emitting diode chip, the plurality of single wavelength LED packages emitting different wavelength light; Mixing blue, green, orange, and red wavelength converting materials so as to correspond to a relative intensity ratio of each wavelength band of the common spectrum pseudo light; And Applying the mixed wavelength converting materials to the LED package group to form a common spectrum wavelength converting material mixed layer, The common spectrum pseudo light has a relative intensity in the blue, green, orange, and red wavelength bands of 85% to 95%, 95% to 105%, respectively, when the maximum relative intensity of 5000K single sunlight is 100%. 75% to 85% and 70% to 80% light, The LED package group is a light emitting diode package manufacturing method comprising a single wavelength LED package for emitting light in the wavelength band exceeding the amount of light in the wavelength band of the common spectrum pseudo-light. 10. The method of claim 9, And forming an encapsulation layer on the LED package group prior to forming the common spectrum converting material mixed layer. 10. The method of claim 9, The common spectrum converting material mixture layer is formed using a blade coating method, screen printing method, dip coating method, dotting method, spin coating method, a spray method or an inkjet printing method. A package substrate; Forming an LED package group having a light emitting diode chip and a wavelength converting material layer disposed on the light emitting diode chip, the plurality of single wavelength LED packages emitting different wavelength light; And Forming a common spectrum LED package disposed in parallel with the LED package group on the package substrate, the common spectrum LED package emitting common spectrum pseudo light; The common spectrum LED package is disposed on the common spectrum light emitting diode chip and the common spectrum light emitting diode chip that emit light having a wavelength of 430 nm or less, and corresponds to the relative intensity ratio of each wavelength band of common spectrum pseudo light. A common spectrum wavelength converting material mixture layer comprising red wavelength converting materials mixed therein; The common spectrum pseudo light has a relative intensity in the blue, green, orange, and red wavelength bands of 85% to 95%, 95% to 105%, respectively, when the maximum relative intensity of 5000K single sunlight is 100% in the green wavelength range. 75% to 85% and 70% to 80% light, The LED package group is a light emitting diode package manufacturing method comprising a single wavelength LED package for emitting light in the wavelength band exceeding the amount of light in the wavelength band of the common spectrum pseudo-light. delete

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