KR101092067B1 - 인라인 방식의 태양전지 제조용 씨비디(cbd) 장치 - Google Patents
인라인 방식의 태양전지 제조용 씨비디(cbd) 장치 Download PDFInfo
- Publication number
- KR101092067B1 KR101092067B1 KR1020090119709A KR20090119709A KR101092067B1 KR 101092067 B1 KR101092067 B1 KR 101092067B1 KR 1020090119709 A KR1020090119709 A KR 1020090119709A KR 20090119709 A KR20090119709 A KR 20090119709A KR 101092067 B1 KR101092067 B1 KR 101092067B1
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- South Korea
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- substrate
- chemical liquid
- chemical
- shower head
- solar cell
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 238000000224 chemical solution deposition Methods 0.000 title description 4
- 239000000126 substance Substances 0.000 claims abstract description 125
- 239000000758 substrate Substances 0.000 claims abstract description 105
- 239000007788 liquid Substances 0.000 claims abstract description 94
- 238000000034 method Methods 0.000 claims abstract description 35
- 238000003860 storage Methods 0.000 claims abstract description 28
- 238000007599 discharging Methods 0.000 claims abstract description 12
- 238000003756 stirring Methods 0.000 claims abstract description 9
- 238000004140 cleaning Methods 0.000 claims description 37
- 238000001035 drying Methods 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 10
- 238000005507 spraying Methods 0.000 claims description 2
- 230000002093 peripheral effect Effects 0.000 claims 1
- 238000007711 solidification Methods 0.000 abstract description 3
- 230000008023 solidification Effects 0.000 abstract description 3
- 238000013019 agitation Methods 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 20
- 238000000151 deposition Methods 0.000 description 11
- 230000008021 deposition Effects 0.000 description 9
- 239000010949 copper Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 230000031700 light absorption Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000010924 continuous production Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000015271 coagulation Effects 0.000 description 1
- 238000005345 coagulation Methods 0.000 description 1
- CDZGJSREWGPJMG-UHFFFAOYSA-N copper gallium Chemical compound [Cu].[Ga] CDZGJSREWGPJMG-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- -1 selenide compound Chemical class 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
Claims (7)
- 기판을 이송하는 반송수단;상기 기판에 버퍼층을 형성하기 위한 약액이 저장된 약액저장조;상기 약액저장조로부터 약액을 전달받아 상기 기판상에 공급할 수 있게 설치하되, 상기 약액을 교반하며 배출하는 샤워헤드; 및상기 기판을 지지하되, 상기 샤워헤드로부터 유입된 약액을 배출시키는 배출관이 구비된 기판로딩부;를 포함하여 구성하되,상기 샤워헤드는 내부가 비어 있고 외주면에는 상기 약액을 배출하는 슬릿을 관통 형성하되, 요동 가능한 회전식 원통롤러로 구성되는 것을 특징으로 하는 인라인 방식의 태양전지 제조용 씨비디 장치.
- 삭제
- 기판을 이송하는 반송수단;상기 기판에 버퍼층을 형성하기 위한 약액이 저장된 약액저장조;상기 약액저장조로부터 약액을 전달받아 상기 기판상에 공급할 수 있게 설치하되, 상기 약액을 교반하며 배출하는 샤워헤드; 및상기 기판을 지지하되, 상기 샤워헤드로부터 유입된 약액을 배출시키는 배출관이 구비된 기판로딩부;를 포함하여 구성하되,상기 샤워헤드는 내부가 비어 있고, 상부가 개방된 일정 깊이의 용기 형태로 형성하되, 요동 가능한 회전식 용기로 구성된 것을 특징으로 하는 인라인 방식의 태양전지 제조용 씨비디 장치.
- 제1항에 있어서,상기 기판로딩부의 배출관은 상기 약액이 상기 약액저장조로 회수될 수 있도록 약액저장조에 연결 설치되는 것을 특징으로 하는 인라인 방식의 태양전지 제조용 씨비디 장치.
- 제4항에 있어서,상기 기판로딩부에는 상기 기판을 가열하는 가열수단이 구비되는 것을 특징으로 하는 인라인 방식의 태양전지 제조용 씨비디 장치.
- 제1항, 제3항 내지 제5항 중 어느 한 항에 있어서,상기 반송수단에는 약액 처리가 완료된 상기 기판을 세정 및 건조시키는 후처리수단이 더 설치되는 것을 특징으로 하는 인라인 방식의 태양전지 제조용 씨비디 장치.
- 제6항에 있어서,상기 후처리수단은 반송되는 기판 상부면에 세정액을 분사하는 세정노즐과 상기 기판 건조용 에어건으로 구성되는 것을 특징으로 하는 인라인 방식의 태양전지 제조용 씨비디 장치.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020090119709A KR101092067B1 (ko) | 2009-12-04 | 2009-12-04 | 인라인 방식의 태양전지 제조용 씨비디(cbd) 장치 |
Applications Claiming Priority (1)
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KR1020090119709A KR101092067B1 (ko) | 2009-12-04 | 2009-12-04 | 인라인 방식의 태양전지 제조용 씨비디(cbd) 장치 |
Publications (2)
Publication Number | Publication Date |
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KR20110062858A KR20110062858A (ko) | 2011-06-10 |
KR101092067B1 true KR101092067B1 (ko) | 2011-12-12 |
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KR1020090119709A KR101092067B1 (ko) | 2009-12-04 | 2009-12-04 | 인라인 방식의 태양전지 제조용 씨비디(cbd) 장치 |
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Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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DE102011077526A1 (de) * | 2011-06-15 | 2012-12-20 | Robert Bosch Gmbh | Verfahren zur Herstellung einer Halbleitereinrichtung |
US8726835B2 (en) * | 2011-06-30 | 2014-05-20 | Jiaxiong Wang | Chemical bath deposition apparatus for fabrication of semiconductor films |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007141926A (ja) * | 2005-11-15 | 2007-06-07 | Sony Corp | 基板処理装置および基板処理方法 |
KR100820362B1 (ko) * | 2006-11-17 | 2008-04-08 | 주식회사 디엠에스 | 약액 공급장치 |
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007141926A (ja) * | 2005-11-15 | 2007-06-07 | Sony Corp | 基板処理装置および基板処理方法 |
KR100820362B1 (ko) * | 2006-11-17 | 2008-04-08 | 주식회사 디엠에스 | 약액 공급장치 |
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