KR101074962B1 - Liquid crystal display and fabricating method thereof - Google Patents

Abstract

The present invention relates to a liquid crystal display device and a method of manufacturing the same which can reduce the deterioration of the thin film transistor and reduce the area of the driving circuit.

A liquid crystal display device having a thin film transistor, the thin film transistor comprising: an active layer including a channel made of polysilicon; A gate insulating film covering the active layer; A gate electrode overlapping the channel with the gate insulating layer interposed therebetween; An interlayer insulating film covering the gate electrode; A source electrode connected to the active layer through a contact hole penetrating the interlayer insulating film; And a drain electrode connected to the active layer through the contact hole to form a channel with the source electrode and partially overlapping the gate electrode.

Description

Liquid crystal display and its manufacturing method {LIQUID CRYSTAL DISPLAY AND FABRICATING METHOD THEREOF}             

1 is a view schematically showing a configuration of a conventional liquid crystal display device.

2 is a plan view showing a switching element composed of one large thin film transistor formed in a driving circuit portion of a conventional liquid crystal display device.

3 is a cross-sectional view taken along the line II ′ of FIG. 2.

4 is a plan view illustrating a driving device including a plurality of thin film transistors formed in a driving circuit of another conventional liquid crystal display.

5 is a plan view illustrating a driving device including a plurality of thin film transistors of a driving circuit unit of a liquid crystal display according to an exemplary embodiment of the present invention.

FIG. 6 is a cross-sectional view taken along the line II-II ′ of FIG. 5.

7 is a cross-sectional view illustrating a method of manufacturing a liquid crystal display device according to an exemplary embodiment of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS FIG.

2: gate line 4: data line                 

30 thin film transistor 92 gate driver

94: data driver 66, 166: gate electrode

68, 168: source electrode 70, 170: drain electrode

74, 174: active layer 84, 184: contact hole

16, 116: buffer film 42, 142: gate insulating film

48, 148: protective film 56, 156: interlayer insulating film

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device, and more particularly, to a liquid crystal display device and a method of manufacturing the same, which can reduce the deterioration of a thin film transistor and reduce the area of a driving circuit portion.

In general, a liquid crystal display (LCD) displays an image by adjusting light transmittance of liquid crystal cells arranged in a matrix form on a liquid crystal panel according to a video signal. In this case, as a device for switching the liquid crystal cells, a thin film transistor (hereinafter, referred to as TFT) is commonly used.

The TFT used in such a liquid crystal display uses amorphous silicon or polysilicon as the semiconductor layer. Amorphous silicon type TFT has the advantage that the characteristics of the amorphous silicon film are relatively good and stable, but amorphous silicon type TFT has the disadvantage of slow response speed due to low charge mobility. Accordingly, the amorphous silicon TFT has a disadvantage in that it is difficult to apply to a driving device of a high resolution display panel or a gate driver and a data driver that require fast response speed.

On the other hand, polysilicon TFTs are not only suitable for high-resolution display panels requiring fast response speed due to high charge mobility, but also have advantages in that peripheral driving circuits can be incorporated in the display panel. Accordingly, liquid crystal displays using polysilicon TFTs have emerged.

1 is a view schematically showing a liquid crystal display device using a conventional polysilicon TFT.

Referring to FIG. 1, a liquid crystal display device using a conventional polysilicon TFT includes an image display unit 96 including a pixel matrix, and a data driver 94 for driving data lines 4 of the image display unit 96. And a gate driver 92 for driving the gate lines 2 of the image display unit 96.

In the image display unit 96, liquid crystal cells LC are arranged in a matrix to display an image. Each of the liquid crystal cells LC is a switching element connected to the intersection of the gate line 2 and the data line 4, and the TFT 30 using N-type or P-type polysilicon implanted with N-type or P-type impurities is provided. use. The N-type or P-type TFT 30 charges the liquid crystal cell LC with a video signal from the data line 4, that is, a pixel signal, in response to the scan pulse from the gate line 2. The liquid crystal cell LC displays an image by adjusting the light transmittance according to the charged pixel signal.

The gate driver 92 drives the gate line 2 sequentially in horizontal periods for each frame by gate control signals. The TFTs 30 are sequentially turned on in units of horizontal lines by the gate driver 92 to connect the data line 4 to the liquid crystal cell LC.

The data driver 94 samples a plurality of digital data signals every horizontal period and converts the digital data signals into analog data signals. The data driver 94 supplies an analog data signal to the data line 4. Accordingly, the liquid crystal cell LC connected to the TFT on which the gate line 2 is turned on adjusts the light transmittance in response to the data signal from the data line 4.

The gate driver 92 and the data driver 92 may include driving devices connected in a CMOS structure. In such a driving device, a relatively large amount of current flows for switching at a relatively high voltage. For this purpose, the driving device is mainly formed of one large polysilicon TFT having a large channel width.

2 is a plan view illustrating a driving device of a conventional driving circuit unit, and FIG. 3 is a cross-sectional view taken along the line II ′ of FIG. 2.

Referring to FIGS. 2 and 3, a driving element including one TFT includes an active layer 74 implanted with n-type or p-type impurities formed on a lower substrate 20 with a buffer layer 16 interposed therebetween. And the gate electrode 66 formed to overlap the channel region 74C of the active layer 74 with the gate insulating layer 42 interposed therebetween, and the gate electrode 66 and the interlayer insulating layer 56 interposed therebetween. And a protective film 48 formed on the source and drain electrodes 68 and 70.

The source and drain electrodes 68 and 70 are source regions of the active layer 74 in which predetermined impurities are implanted through the source and drain contact holes 84S and 84D passing through the gate insulating layer 42 and the interlayer insulating layer 56. 74S and drain region 74D, respectively. The passivation layer 48 is formed on the source and drain electrodes 68 and 70 to protect the driving element.

As described above, the driving device embedded in the driving circuit unit including one giant TFT has an advantage of allowing a relatively large amount of current to flow through the wide channel width Wa. However, when a large amount of current flows in the channel region 74C of the TFT, higher heat is generated by the self heating phenomenon of the TFT, and a phenomenon in which the driving device is deteriorated by the high heat appears. In particular, such self heating phenomenon is known to occur mainly in the drain region 74D of the active layer 74 of the TFT.

Accordingly, a structure as shown in FIG. 4 has been proposed as a structure capable of preventing the self heating phenomenon of the TFT.

4 shows a driving element of a driving circuit portion of a liquid crystal display device having a structure in which a plurality of TFTs having a smaller channel width Wb are connected in parallel by dividing the channel width Wa of the large TFT smaller.

Referring to Fig. 4, in the driving element composed of a plurality of TFTs, the sum of the channel widths Wb of each of the plurality of TFTs is equal to the channel width Wa of the one large TFT shown in Fig. 2 (small channel width Wb). The number of channels n = channel width Wb) has a structure in which a plurality of TFTs having a channel width Wb are connected in parallel.

However, a driving element composed of a plurality of TFTs has a gap between channels as small as D between the small channel widths Wb of each TFT, and the layout area of the driving element is increased by the interval D. Accordingly, in the case of using the driving elements made up of a plurality of TFTs in the driving circuit portion of the liquid crystal display device, the liquid crystal display device has a disadvantage in that the area occupied by the driving circuit portion in addition to the display panel increases.

Accordingly, an object of the present invention is to provide a liquid crystal display device and a method of manufacturing the same, which can reduce the degradation of the thin film transistor and reduce the area of the driving circuit.

In order to achieve the above object, a liquid crystal display device according to an embodiment of the present invention, the liquid crystal display device having a thin film transistor, the thin film transistor, the active layer including a channel made of polysilicon; A gate insulating film covering the active layer; A gate electrode overlapping the channel with the gate insulating layer interposed therebetween; An interlayer insulating film covering the gate electrode; A source electrode connected to the active layer through a contact hole penetrating the interlayer insulating film; And a drain electrode connected to the active layer through the contact hole to form a channel with the source electrode and partially overlapping the gate electrode.                     

The interlayer insulating film is formed to a thickness of 0.5 μm to 1.0 μm.

The width of the region where the drain electrode overlaps the gate electrode is wider than the thickness of the interlayer insulating film.

The liquid crystal display device includes: a plurality of data electrodes, a plurality of gate electrodes crossing the data electrodes, liquid crystal cells formed in a pixel region defined by the data electrodes and the gate electrodes; A data driving circuit unit for supplying a data signal to the data electrode; A gate driving circuit unit for supplying a scan signal to the gate electrode; At least one of the data driving circuit and the gate driving circuit includes a CMOS circuit in which a plurality of the thin film transistors are combined in parallel.

A method of manufacturing a liquid crystal display according to an exemplary embodiment of the present invention includes forming an active layer including a channel made of polysilicon; Forming a gate insulating film covering the active layer; Forming a gate electrode overlapping the channel with the gate insulating layer interposed therebetween; Forming an interlayer insulating film covering the gate electrode; Forming a source electrode connected to the active layer through a contact hole penetrating the interlayer insulating film; Forming a drain electrode connected to the active layer through the contact hole and forming a channel together with the source electrode and partially overlapping the gate electrode.

Hereinafter, exemplary embodiments of the present invention will be described with reference to FIGS. 5 to 7.

5 is a plan view illustrating a driving element of a driving circuit unit of a liquid crystal display according to an exemplary embodiment of the present invention, and FIG. 6 is a cross-sectional view taken along the line II-II 'of FIG. 5.

5 and 6, a driving device including a plurality of TFTs includes an active layer 174 implanted with n-type or p-type impurities formed on a lower substrate 120 with a buffer layer 116 interposed therebetween. The gate electrode 166 is formed to overlap the channel region 174C of the active layer 174 with the gate insulating layer 142 interposed therebetween, and is insulated with the gate electrode 166 and the interlayer insulating layer 156 therebetween. Source and drain electrodes 168 and 170 to be formed, and a protective film 148 formed on the source and drain electrodes 168 and 170.

The source and drain electrodes 168 and 170 are source regions of the active layer 174 in which predetermined impurities are injected through the source and drain contact holes 184S and 184D passing through the gate insulating layer 142 and the interlayer insulating layer 156. 174S and drain region 174D, respectively. The passivation layer 148 is formed on the source and drain electrodes 168 and 170 to protect the driving element.

Here, the drain electrode 170 extends to the upper portion of the gate electrode 166 to dissipate heat generated by the self-heating phenomenon that occurs intensively in the drain region 174D of the active layer 174, thereby forming the gate electrode 166. It is formed to overlap with.

As a result, heat generated in the drain region 174D of the active layer 174 is rapidly dispersed through the drain electrode 170 formed on the gate electrode 166.

At this time, the interlayer insulating film 156 is formed to have a thickness of 0.5 μm to 1.0 μm. In order to quickly dissipate heat generated from the drain region 174D to the drain electrode 170, the interlayer insulating film 156 should be formed to have a minimum thickness, but the thickness of the process to some extent is required for the role of the insulating film. Because it must be compensated.

In addition, the width of the region where the drain electrode 170 overlaps with the gate electrode 166 is formed to be wider than the thickness of the interlayer insulating layer 156 to compensate for a process margin. In particular, as the drain electrode 170 is formed wider on the gate electrode 166, the heat generated from the drain region 174D may be better dispersed, so that the drain electrode 170 overlaps the gate electrode 166. It may be formed.

The driving element of the driving circuit unit according to the embodiment of the present invention is composed of a plurality of TFTs having a channel width Wc smaller than the channel width Wa of the large TFT and larger than the channel width Wb of the plurality of TFTs connected in parallel. .

Due to the driving device having such a structure, the channel width Wc is narrower than the channel width Wa of the large TFT, thereby reducing the deterioration of the driving device due to self heating.

In addition, since the channel width Wc can be made wider than the channel width Wb of the plurality of TFTs connected in parallel, the number of the plurality of TFTs connected in parallel can be reduced, thereby being formed between the channel of the driving element and the channel. The area of the driving circuit can be reduced by reducing the distance D between the channels.

The thin film transistor according to an exemplary embodiment of the present invention may be applied to a switching element of a display panel as well as the case where it is applied to a driving circuit unit.

7A to 7D are cross-sectional views illustrating a method of manufacturing a liquid crystal display according to an exemplary embodiment of the present invention.                     

Referring to FIG. 7A, first, a buffer layer 116 is formed by depositing and patterning an entire surface of the lower substrate 120 with an insulating material such as SiO ₂ . After the amorphous silicon film is deposited on the lower substrate 120 on which the buffer film 116 is formed, the amorphous silicon film is crystallized by a laser to form a polysilicon film, and the polysilicon film is patterned by a photolithography process and an etching process using a mask. do. Accordingly, an active layer 174 having a channel width Wc and a gap D between the channels is formed.

The gate insulating layer 142 is formed by depositing an insulating material of SiO ₂ on the lower substrate 120 on which the active layer 174 is formed. After the gate metal layer is entirely deposited on the lower substrate 120 on which the gate insulating layer 142 is formed, the gate metal layer is patterned by a photolithography process and an etching process using a mask to form the gate electrode 166 as shown in FIG. 7B. . Here, an aluminum-based metal including aluminum (Al), aluminum / nedium (Al / Nd), or the like is used as the gate metal layer. Using the gate electrode 166 as a mask, n-ion impurities are implanted into the active layer 174 to overlap the gate electrode 166 with the channel region 174C and the gate electrode 166. The non-overlapping active layer 174 is formed of the LDD region 74L.

Then, after the photoresist is entirely deposited on the lower substrate 120, the photoresist is patterned by a photolithography process using a mask to form a photoresist pattern. The photoresist pattern is formed so that the source region 174S and the drain region 174D of the active layer 174 are exposed. Using the photoresist pattern as a mask, n + ions or p + ions are implanted into the active layer 174 to form the source region 174S and the drain region 174D of the active layer 174.

An interlayer insulating film 156 is formed by depositing an insulating material such as SiO ₂ on the lower substrate 120 on which the active layer 174 implanted with n + ions or p + ions is deposited. Thereafter, the interlayer insulating film 156 and the gate insulating film 142 are patterned by a photolithography process and an etching process using a mask. Accordingly, the source contact hole 184S and the drain contact hole 184D exposing the source region 174S and the drain region 174D, respectively, are formed as shown in FIG. 7C.

After the data metal layer is entirely deposited on the lower substrate 120 on which the source contact hole 184S and the drain contact hole 184D are formed, the data metal layer is patterned by a photolithography process and an etching process using a mask. Accordingly, source and drain electrodes 168 and 170 are formed as shown in FIG. 7D. In this case, the drain electrode 170 extends to overlap the gate electrode 166, and the source and drain electrodes 168 and 170 may be formed through the source contact hole 184S and the drain contact hole 184D. Is in contact with the source region 174S and the drain region 174D.

The protective layer 148 is formed by depositing an insulating material such as SiNx on the lower substrate 120 on which the source and drain electrodes 168 and 170 are formed.

As described above, the liquid crystal display device and the method of manufacturing the same according to the present invention can reduce the deterioration of the driving device due to self heating by forming the channel width narrower than the channel width of the large TFT.

In addition, since the channel width can be made wider than the channel width of the plurality of TFTs connected in parallel, the number of TFTs connected in parallel can be reduced, thereby reducing the gap between the channel of the driving element and the channel formed between the channels. The area of the driving circuit portion can be reduced.

Those skilled in the art will appreciate that various changes and modifications can be made without departing from the technical spirit of the present invention. Therefore, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification, but should be defined by the claims.

Claims (7)

In a liquid crystal display device having a thin film transistor, The thin film transistor, An active layer comprising a channel made of polysilicon; A gate insulating film covering the active layer; A gate electrode overlapping the channel with the gate insulating layer interposed therebetween; An interlayer insulating film covering the gate electrode; A source electrode connected to the active layer through a contact hole penetrating the interlayer insulating film; And a drain electrode connected to the active layer through the contact hole to form a channel together with the source electrode, and extending to an upper portion of the gate to overlap the gate electrode. The method of claim 1, And the interlayer insulating layer has a thickness of 0.5 μm to 1.0 μm. The method of claim 1, And a width of a region where the drain electrode overlaps the gate electrode is wider than a thickness of the interlayer insulating film. The method of claim 1, The liquid crystal display device, A plurality of data electrodes, A plurality of gate electrodes intersecting the data electrodes; Liquid crystal cells formed in the pixel region defined by the data electrode and the gate electrode; A data driving circuit unit for supplying a data signal to the data electrode; A gate driving circuit unit for supplying a scan signal to the gate electrode; At least one of the data driving circuit and the gate driving circuit includes a CMOS circuit in which a plurality of the thin film transistors are combined in parallel. Forming an active layer comprising a channel made of polysilicon; Forming a gate insulating film covering the active layer; Forming a gate electrode overlapping the channel with the gate insulating layer interposed therebetween; Forming an interlayer insulating film covering the gate electrode; Forming a source electrode connected to the active layer through a contact hole penetrating the interlayer insulating film; Forming a drain electrode connected to the active layer through the contact hole and forming a channel together with the source electrode, and extending to an upper portion of the gate electrode to partially overlap the gate electrode. Method of manufacturing the device. The method of claim 5, The interlayer insulating film is a manufacturing method of the liquid crystal display device, characterized in that formed in a thickness of 0.5㎛ ~ 1.0㎛. The method of claim 5, The width of the region where the drain electrode overlaps the gate electrode is larger than the thickness of the interlayer insulating film. A method of manufacturing a liquid crystal display device, characterized in that it is wide.

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