KR101039930B1 - 발광소자 패키지 및 그 제조방법 - Google Patents
발광소자 패키지 및 그 제조방법 Download PDFInfo
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- KR101039930B1 KR101039930B1 KR1020090101227A KR20090101227A KR101039930B1 KR 101039930 B1 KR101039930 B1 KR 101039930B1 KR 1020090101227 A KR1020090101227 A KR 1020090101227A KR 20090101227 A KR20090101227 A KR 20090101227A KR 101039930 B1 KR101039930 B1 KR 101039930B1
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- South Korea
- Prior art keywords
- filler
- light emitting
- emitting device
- light
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 239000000945 filler Substances 0.000 claims abstract description 93
- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 24
- 238000000605 extraction Methods 0.000 claims description 22
- 230000000694 effects Effects 0.000 description 13
- 239000004038 photonic crystal Substances 0.000 description 7
- QVMHUALAQYRRBM-UHFFFAOYSA-N [P].[P] Chemical compound [P].[P] QVMHUALAQYRRBM-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000008393 encapsulating agent Substances 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- -1 YAG Chemical compound 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8515—Wavelength conversion means not being in contact with the bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/853—Encapsulations characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/872—Periodic patterns for optical field-shaping, e.g. photonic bandgap structures
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- Led Device Packages (AREA)
Abstract
Description
Claims (19)
- 반도체 발광소자;상기 반도체 발광소자 상에 제1 충진제;상기 제1 충진제 상에 상기 제1 충진제의 굴절률보다 큰 굴절률을 갖는 제2 충진제; 및상기 제2 충진제 상에 상부의 형태가 돔(dome) 형태인 제3 충진제;를 포함하는 발광소자 패키지.
- 제1 항에 있어서,상기 제1 충진제는,상기 발광소자와 접하여 형성되는 발광소자 패키지.
- 제1 항에 있어서,상기 제2 충진제는,형광체를 포함하여 형성되는 발광소자 패키지.
- 제1 항에 있어서,상기 제2 충진제는,상기 발광소자와 이격되어 형성되는 발광소자 패키지.
- 제1 항에 있어서,상기 제2 충진제는,상부의 형태가 돔(dome) 형태인 발광소자 패키지.
- 삭제
- 제1 항에 있어서,상기 제3 충진제의 굴절률은 상기 제2 충진제의 굴절률 이상인 발광소자 패키지.
- 제1 항에 있어서,상기 발광소자의 상층부에는 광추출 패턴을 포함하는 발광소자 패키지.
- 제8 항에 있어서,상기 광추출 패턴은 상기 제1 충진제와 접하고, 상기 제2 충진제에 형광체를 포함하는 발광소자 패키지.
- 제1 항에 있어서,상기 발광소자의 굴절률이 상기 제1 충진제의 굴절률 보다 큰 발광소자 패키 지.
- 반도체 발광소자를 형성하는 단계;상기 반도체 발광소자 상에 제1 충진제를 형성하는 단계;상기 제1 충진제 상에 상기 제1 충진제의 굴절률보다 큰 굴절률을 갖는 제2 충진제를 형성하는 단계; 및상기 제2 충진제 상에 상부의 형태가 돔(dome) 형태인 제3 충진제를 형성하는 단계;를 포함하는 발광소자 패키지의 제조방법.
- 제11 항에 있어서,상기 제1 충진제를 형성하는 단계는,상기 발광소자와 접하여 제1 충진제를 형성하는 발광소자 패키지의 제조방법.
- 제11 항에 있어서,상기 제2 충진제를 형성하는 단계는,형광체를 포함하여 제2 충진제를 형성하는 발광소자 패키지의 제조방법.
- 제11 항에 있어서,상기 제2 충진제를 형성하는 단계는,상기 발광소자와 이격되어 형성되는 발광소자 패키지의 제조방법.
- 제11 항에 있어서,상기 제2 충진제를 형성하는 단계는,상부의 형태가 돔(dome) 형태로 형성되는 발광소자 패키지의 제조방법.
- 삭제
- 제11 항에 있어서,상기 제3 충진제의 굴절률은 상기 제2 충진제의 굴절률 이상인 발광소자 패키지의 제조방법.
- 제11 항에 있어서,상기 발광소자의 상층부에는 광 추출 패턴을 포함하는 발광소자 패키지의 제조방법.
- 제18 항에 있어서,상기 광추출 패턴은 상기 제1 충진제와 접하고, 상기 제2 충진제에 형광체를 포함하는 발광소자 패키지의 제조방법.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090101227A KR101039930B1 (ko) | 2009-10-23 | 2009-10-23 | 발광소자 패키지 및 그 제조방법 |
US12/909,098 US9048395B2 (en) | 2009-10-23 | 2010-10-21 | Light emitting device package, lighting module and lighting system |
EP10188574.7A EP2315283B1 (en) | 2009-10-23 | 2010-10-22 | Light emitting device package, lighting module and lighting unit |
CN201010528649.2A CN102074642B (zh) | 2009-10-23 | 2010-10-25 | 发光器件封装、照明模块以及照明系统 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090101227A KR101039930B1 (ko) | 2009-10-23 | 2009-10-23 | 발광소자 패키지 및 그 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20110044511A KR20110044511A (ko) | 2011-04-29 |
KR101039930B1 true KR101039930B1 (ko) | 2011-06-09 |
Family
ID=43589763
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020090101227A Expired - Fee Related KR101039930B1 (ko) | 2009-10-23 | 2009-10-23 | 발광소자 패키지 및 그 제조방법 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9048395B2 (ko) |
EP (1) | EP2315283B1 (ko) |
KR (1) | KR101039930B1 (ko) |
CN (1) | CN102074642B (ko) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009028869A2 (en) * | 2007-08-27 | 2009-03-05 | Lg Electronics Inc. | Light emitting device package and lighting apparatus using the same |
WO2013054226A1 (en) * | 2011-10-12 | 2013-04-18 | Koninklijke Philips Electronics N.V. | Light-emitting arrangement |
CN103515516A (zh) * | 2012-06-20 | 2014-01-15 | 鑫成科技(成都)有限公司 | 发光二极管封装结构 |
KR20140028768A (ko) * | 2012-08-30 | 2014-03-10 | 현대모비스 주식회사 | 자동차의 조명장치 및 그것의 제조방법 |
CN103022310B (zh) * | 2012-12-30 | 2016-03-23 | 佛山市国星半导体技术有限公司 | Led发光芯片的光提取层及led装置 |
JP6582754B2 (ja) * | 2015-08-31 | 2019-10-02 | 日亜化学工業株式会社 | 複合基板、発光装置、及び発光装置の製造方法 |
CN105304802A (zh) * | 2015-10-12 | 2016-02-03 | 深圳万城节能股份有限公司 | 发光装置的制造方法 |
TWI624966B (zh) * | 2015-11-23 | 2018-05-21 | 隆達電子股份有限公司 | 發光二極體封裝裝置 |
Citations (4)
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-
2009
- 2009-10-23 KR KR1020090101227A patent/KR101039930B1/ko not_active Expired - Fee Related
-
2010
- 2010-10-21 US US12/909,098 patent/US9048395B2/en active Active
- 2010-10-22 EP EP10188574.7A patent/EP2315283B1/en not_active Not-in-force
- 2010-10-25 CN CN201010528649.2A patent/CN102074642B/zh active Active
Patent Citations (4)
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KR100593941B1 (ko) * | 2005-04-28 | 2006-06-30 | 삼성전기주식회사 | 3족 질화물 발광 소자의 제조 방법 |
KR100826396B1 (ko) * | 2007-01-18 | 2008-05-02 | 삼성전기주식회사 | Led 칩 패키지 |
JP2009146924A (ja) | 2007-12-11 | 2009-07-02 | Sumitomo Osaka Cement Co Ltd | 発光装置及び電子機器 |
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Also Published As
Publication number | Publication date |
---|---|
EP2315283A3 (en) | 2014-04-02 |
EP2315283A2 (en) | 2011-04-27 |
US20110095319A1 (en) | 2011-04-28 |
CN102074642B (zh) | 2015-11-25 |
CN102074642A (zh) | 2011-05-25 |
KR20110044511A (ko) | 2011-04-29 |
US9048395B2 (en) | 2015-06-02 |
EP2315283B1 (en) | 2017-03-29 |
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