KR100937822B1 - Ion beam irradiation device and the method thereof - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ion beam irradiation apparatus and a method for improving production efficiency in a step of irradiating an ion beam to an alignment film of a liquid crystal display to perform liquid crystal alignment.

The present invention provides a method for performing an alignment treatment by irradiating a plurality of substrates at the same time using an ion beam irradiation apparatus. As a result, many substrates can be subjected to alignment treatment at the same time, thus increasing the productivity.

Alignment Film, Ion Gun, Ion Beam, Substrate

Description

Ion beam irradiation device and the method

1 is a schematic cross-sectional view of a general liquid crystal display device.

2 shows a schematic configuration of an ion beam irradiation apparatus for forming a conventional alignment film.

Figure 3 is a graph showing the relationship between the pretilt angle (pretilt angle) according to the irradiation angle (θ₂) of the ion beam in the conventional ion beam irradiation apparatus.

4 is a view schematically showing an ion beam irradiation apparatus as an embodiment according to the present invention.

5 is a conceptual partial perspective view of the ion beam irradiation apparatus of FIG. 4.

6 is a schematic view of an ion beam irradiation apparatus according to another embodiment of the present invention.

7 is a conceptual partial perspective view of the ion beam irradiation apparatus of FIG. 6.

8 is a partial perspective view showing a process of substrate alignment in an ion beam irradiation apparatus according to another embodiment of the present invention.

<Description of Signs of Major Parts of Drawings>

300, 400: ion beam source 301, 401: plasma forming portion                 

302, 402, 502: ion gun 310, 410: stage

320, 420, 520: substrate 330, 430, 530: ion beam

340, 440: vacuum chamber 350, 450, 550: alignment film

360, 460: Valve

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ion beam irradiation apparatus and a method for improving production efficiency in a step of irradiating an ion beam to an alignment film of a liquid crystal display to perform liquid crystal alignment.

In general, CRT (or CRT: Cathode Ray Tube) has been the most used display device for displaying image information on the screen, which is inconvenient to use because it is bulky and heavy compared to the display area. .

In addition, with the development of the electronics industry, display devices, which have been limitedly used in TV CRTs, have been widely used in personal computers, notebooks, wireless terminals, automobile dashboards, electronic displays, and can transmit large amounts of image information with the development of information and communication technology. As a result, the importance of the next generation display device that can process and implement this is increasing.

Such next-generation display devices should be able to realize light and small, high brightness, large screen, low power consumption, and low price, and one of them has recently attracted attention.

The liquid crystal display (LCD) has excellent display resolution than other flat panel display devices and exhibits a response speed that is higher than that of a CRT when implementing a moving image.

As is known, the driving principle of the liquid crystal display device utilizes the optical anisotropy and polarization properties of the liquid crystal.

Since the liquid crystal molecules are thin and long in structure, the liquid crystal molecules have directionality and polarization in the molecular arrangement, and the direction of the molecular arrangement can be controlled by artificially applying an electromagnetic field to the liquid crystal molecules.

Accordingly, if the alignment direction of the liquid crystal molecules is arbitrarily adjusted, light can be transmitted or blocked according to the alignment direction of the liquid crystal molecules by the optical anisotropy of the liquid crystal, so that the color and the image can be displayed by the light transmittance which is changed accordingly. do.

1 is a schematic cross-sectional view of a general liquid crystal display device.

Referring to FIG. 1, a gate electrode 121 made of a conductive material such as a metal is formed on a transparent first substrate 111, and a gate insulating layer 130 made of silicon nitride (SiNx) or silicon oxide (SiOx) is formed thereon. ) Covers the gate electrode 121.

An active layer 141 made of amorphous silicon is formed on the gate insulating layer 130 on the gate electrode 121, and ohmic contact layers 151 and 152 made of amorphous silicon doped with impurities are formed thereon. .

In addition, source and drain electrodes 161 and 162 made of a conductive material such as a metal are formed on the ohmic contact layers 151 and 152, and the source and drain electrodes 161 and 162 are the gate electrode 121. ) And a thin film transistor (TFT: T).

A passivation layer 170 made of a silicon nitride layer (SiNx) or a silicon oxide layer (SiOx) is formed on the source and drain electrodes 161 and 162, and the passivation layer 170 has a contact hole exposing the drain electrode 162. Has 171.

A pixel electrode 181 made of a transparent conductive material is formed in the pixel area above the passivation layer 170, and the pixel electrode 181 is connected to the drain electrode 162 through a contact hole.

A first alignment layer 191 formed of a material such as polyimide and having a surface in a predetermined direction is formed on the pixel electrode 181.

In this case, the gate electrode 121 is connected to a gate wiring, the source electrode 161 is connected to a data wiring, and the gate wiring and the data wiring are orthogonal to each other to define a pixel region.

The lower substrate including the first substrate 111 configured as described above includes a transparent second substrate 110 having a predetermined distance from the first substrate 111.

A black matrix 120 is formed in a portion corresponding to the thin film transistor under the second substrate 110 to prevent light leakage from occurring in portions other than the pixel region.

A color filter 131 is formed below the black matrix 120, and the color filter 131 is formed by sequentially repeating three colors of red (R), green (G), and blue (B). One color corresponds to one pixel area.

In this case, the color filter 131 may be formed by a dyeing method, a printing method, a pigment dispersion method, an electrodeposition method, or the like.

Subsequently, a common electrode 140 made of a transparent conductive material is formed below the color filter 131, and a lower surface of the common filter 140 is formed of a material such as polyimide and has a predetermined direction. The second alignment layer 150 is formed.

Here, the liquid crystal layer 190 is injected between the first alignment layer 191 and the second alignment layer 150, and the liquid crystal molecules of the liquid crystal layer 190 are initially initialized by the alignment directions of the alignment layers 191 and 150. The orientation state is determined.

Hereinafter, a process of forming an alignment layer for determining an initial alignment direction of liquid crystal molecules in a liquid crystal display having the above configuration will be described in more detail.

First, the alignment film is formed by applying a polymer thin film and arranging the alignment film in a predetermined direction.

In general, a polyimide-based organic material is mainly used for the alignment layer, and a rubbing method is mainly used to arrange the alignment layer.

In the rubbing method, first, a polyimide-based organic material is coated on a substrate, the solvent is blown and aligned at a temperature of about 60 to 80 ° C., and then cured at a temperature of about 80 to 200 ° C. to form a polyimide alignment layer. It is a method of forming a variety of orientation directions by rubbing the alignment layer in a certain direction using a rubbing cloth wound with a velvet or the like.

Such a method by rubbing has an advantage that the alignment treatment is easy, suitable for mass production, and has a stable orientation.

However, since the rubbing method is performed through direct contact between the alignment film and the rubbing cloth, contamination of the cell by dust generation, destruction of the TFT element installed on the substrate due to static electricity generation, and the need for an additional cleaning process after rubbing. However, various problems such as non-uniformity of orientation in large-area applications occur, resulting in a drop in yield in manufacturing a liquid crystal display.

In order to improve the problem of the rubbing method, various non-rubbing orientation techniques without using a mechanical rubbing method have been proposed.

Such alignment techniques include a method using a Langmuir-Blodgett film (LB film), a photo alignment method using UV irradiation, a method using four-way deposition of SiO ₂ , and microgrooves formed by photolithography. There is a method using micro-groove, and a method using ion beam irradiation.

Among these, the method of aligning using an ion beam not only solves the problems caused by the mechanical rubbing method, but can also use a conventional alignment material as it is and can cope with a large area.

2 is a view showing a schematic configuration of an ion beam irradiation apparatus for forming a conventional alignment film.

The ion beam irradiation apparatus is largely divided into three regions, a region 203 in which injected gas is ionized into ions and electrons to form a plasma, and a region in which the ions are extracted in the form of a beam and accelerated to pass through ( 206 and the irradiation area 211 from where the accelerated ion beam 210 is emitted to the substrate.

In the region 203 forming the plasma, the injected gas is ionized with ions, and the ionized ions are extracted and accelerated and irradiated onto the substrate 220.

 That is, the ion beam irradiation device is configured to irradiate the ion beam 210 to the substrate 220 fixed to the holder 221 in the vacuum container 240.

In this case, the ion beam irradiation apparatus includes an ion beam source 200 including a cathode 201 and an anode 202, an ion beam extraction medium 204, and an ion beam acceleration medium 205. ), A vacuum vessel 240 allowing the ion beam 210 generated from the ion beam source 200 to be irradiated to the substrate 220 in a straight line, and the substrate 220 in the vacuum vessel 240. It comprises a holder 221 is fixed to maintain a constant angle.                         

Although not shown, a shutter may be provided between the ion beam source 200 and the substrate 220 to adjust the time for which the ion beam 210 is irradiated onto the substrate 220.

The ion beam source 200 generates ions and generates an ion beam 210. The ion beam source 200 ionizes the injected gas by the voltage difference between the cathode 201 and the anode 202 to generate a plasma including electrons and ions. In the generated plasma, the ions pass through the passage of the ion beam extraction medium 204 by the extraction electrode and are extracted to the ion beam 210.

The ion beam 210 extracted from the discharged plasma is accelerated by the action of the electric field applied to the ion beam acceleration medium 205 and irradiated at a predetermined angle on the substrate 220.

Here, the substrate 220 is inclined at a predetermined angle with respect to the ion beam 210 to be irradiated, thereby forming a desired orientation direction on the alignment film coated on the substrate 220 using the ion beam 210. And may form a pretilt angle.

As such, the ion beam 210 generated from the ion beam source 200 is drawn out in the normal direction of the ion beam source 200 and is irradiated to the alignment layer on the substrate 220 inclined at a constant angle θ₁. By (θ 2), the pretilt angle of the liquid crystal molecules is determined. Θ₁ = θ₂ at this time.

In this case, the irradiation angle θ₂ refers to the angle formed between the irradiation direction of the ion beam 210 and the normal direction of the substrate 220, and the irradiation angle θ₂ between the ion beam 210 and the pretilt angle. The relationship is shown in FIG.

Referring to FIG. 3, it can be seen that the pretilt angle has different characteristics according to the irradiation angle of the ion beam. When the irradiation angle of the ion beam is between 40 and 60 degrees, the pretilt angle has the maximum pretilt angle. The angle has a pretilt angle of 5 degrees or less.

Therefore, in order to uniformly obtain a desired pretilt angle in the liquid crystal display, an ion beam having an appropriate irradiation angle on the entire surface of the alignment layer on the substrate must be irradiated with the same energy.

The ion beam irradiation apparatus having the structure as described above has a very troublesome problem because the ion beam irradiation apparatus needs to be performed after newly setting the substrate every time the ion beam is irradiated to form the pretilt angle by irradiating the ion beam to the alignment layer.

In other words, in the vacuum vessel of the ion beam irradiation apparatus, the ion beam drawn from the ion beam source in a direction perpendicular to the direction of the major axis of the extraction medium and the acceleration medium is irradiated onto the alignment layer to obtain the desired pretilt angle. The process of tilting the substrate so as to reach the substrate at a desired irradiation angle should be performed every ion beam irradiation.

Therefore, the conventional ion beam irradiation apparatus has a problem in that the production time decreases due to a long time for forming the pretilt angle on the alignment layer.

In addition, in order to irradiate the energy of a uniform ion beam, a long enough distance must be maintained from the ion beam source to the substrate, and as the substrate size increases, the distance must be longer.

SUMMARY OF THE INVENTION An object of the present invention is to provide an ion beam irradiation apparatus and a method thereof capable of simultaneously orientating a plurality of substrates by one irradiation of an ion beam by tilting a substrate coated with an alignment film in a predetermined direction in the ion beam irradiation apparatus. .

In order to achieve the above object, the ion beam irradiation apparatus according to the present invention comprises: a plurality of substrates disposed inclined at a predetermined angle in a vacuum chamber and moving in one direction; ions irradiating an ion beam spaced at a predetermined interval to the substrate; Gun (Ion gun); characterized in that comprises a.

In addition, the ion beam irradiation method according to the present invention in order to achieve the above object,

Entering and arranging a plurality of substrates into the vacuum chamber; Placing the plurality of substrates inclined at a predetermined angle in a vacuum chamber; And irradiating an ion beam while the substrate moves in one direction.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

(First embodiment)

4 is a view schematically showing an ion beam irradiation apparatus as an embodiment according to the present invention.

As shown in FIG. 4, in the ion beam irradiation apparatus according to the present invention, the ion beam 330 is irradiated onto the entire surface of the substrate 320 as the substrate 320 moves in one direction.

The ion beam irradiation apparatus ionizes the injected gas into ions, accelerates the ionized ions, and discharges the ionized ions to the substrate 320, and ions generated from the ion beam source 300. A vacuum chamber 340 for allowing the beam 330 to be irradiated to the substrate 320, and a stage 310 for fixing the substrate 320 in the vacuum chamber 340 and moving in one direction; Each time the ion beam irradiation is completed, it comprises a valve 360 that can discharge the gas and move the stage 310 from the outside to the inside to the outside.

The ion beam source 300 is a plasma forming unit 301 to form a plasma by the injection gas is separated into ions and electrons, the ion beam 330 formed in the plasma forming unit 301 is accelerated to the substrate 320 It includes a ion gun (302) withdrawn).

Although not shown, the ion beam irradiation apparatus may include a shutter or a substrate 320 between the ion beam source 300 and the substrate 320 to adjust the time for which the ion beam 330 is irradiated onto the substrate 320. A mask may be separately provided to adjust the amount of the ion beam 330 irradiated to the surface.

In this case, a substrate 320 on which the alignment layer 350 is applied is mounted on the stage 310 to move together, and the alignment layer 350 includes polyimide, SiO ₂ , SiC, Si ₃ N ₄ , Al ₂ O ₃ , CeO ₂ , SnO ₂ , glass, ZnTiO ₂ , DLC (Diamond-Like Carbon) and the like can be used.

The ion beam source 300 generates ions and generates an ion beam 330. The plasma containing electrons and ions is ionized by ionizing a gas injected by a voltage difference between a cathode and an anode. ), And ions in the generated plasma pass through the ion gun by the extraction electrode to the ion beam 330.

The ion beam 330 drawn from the discharged plasma is accelerated by the action of an electric field and irradiated onto the substrate 320.

Here, in the vacuum chamber 340, the substrate 320 is fixed on the stage 310 and can be tilted at a fixed angle to be fixed and move in one direction to obtain a desired pretilt angle, thus the ion gun 302 The ion beam 330 drawn out through) is inclined at a predetermined angle to the substrate 320 to be irradiated.

In this case, two substrates 320 are transferred and set into the vacuum chamber 340 in the substrate 320 fixedly transported on the stage 310 before being introduced into the ion beam irradiation apparatus.

The two substrates 320 are arranged in a direction perpendicular to the movement direction (arranged in a direction perpendicular to the movement direction axis), and the two substrates 320 are arranged at a predetermined angle θ symmetrically about the movement direction. The ion beam is radiated while being inclined to move in the vacuum chamber 340, and the entire surface of the alignment layer 350 on the substrate 320 is aligned by the ion beam 330 radiated onto the substrate 320.

Here, the ion beam 330 drawn from the ion gun 302 by moving the stage 310 fixing the substrate 320 at a constant speed in one direction in the vacuum chamber 340 of the ion beam irradiation apparatus. ), The entire surface of the alignment film 350 formed on the substrate 320 inclined at a predetermined angle θ may be oriented to form a desired pretilt angle.

According to the present invention, the size of the ion gun 302 in the ion beam irradiation apparatus does not need to be doubled to process the two substrates 320. Since the two substrates 320 are inclined at a predetermined angle during the alignment process, the area of the region where the ion beam is irradiated from the ion gun is small with respect to the effective area of the substrate 320 to which the ion beam 330 is irradiated. .

Therefore, using the ion beam irradiation device not only maintains the uniformity of the alignment layer 350, but also can be subjected to the orientation treatment of the two substrates 320 by one irradiation of the ion beam, the productivity is doubled There is this.

As a result, a desired alignment direction may be formed on the alignment layer 350 coated on the substrate 320 using the ion beam 330, and a pretilt angle may be formed.

At this time, an alignment film 350 of an organic material such as polyimide is coated on the substrate 320. The organic material used as the alignment film 350, such as polyimide, has a main chain and side chains as chemical structures. divided into side chains.

The main chain serves to align the liquid crystal molecules in one direction, and the side chain serves to form a pretilt angle.

In particular, the side chain reacts upon irradiation with the ion beam so that a predetermined portion is broken so that the liquid crystal molecules are aligned with the orientation at the time of alignment.

As such, the ion beam 330 generated from the ion beam source 300 is drawn out in the inclined direction of the ion gun 302 and irradiated to the alignment layer 350 on the substrate 320 at a predetermined angle θ. The pretilt angle of the liquid crystal molecules is determined.

Hereinafter, a process of aligning the substrate 320 on which the alignment layer 350 is formed using the ion beam irradiation apparatus according to the present invention will be described in detail.

First, the alignment treatment process using the ion beam irradiation apparatus according to the present invention is largely divided into three steps. In the alignment process, the stage 310 holding the substrate 320 forming the alignment layer 350 is loaded before being introduced into the ion beam irradiation apparatus, and the stage 310 is moved to Irradiating the ion beam 330 to the substrate 320 when it is introduced into the vacuum chamber 340 of the ion beam irradiation apparatus, and when the ion beam 330 is irradiated on the front surface of the substrate 320, the ion beam irradiation apparatus And discharged to the outside.

An alignment layer 350 is formed on the substrate 320, and the substrate 320 is fixed to the stage 310 and loaded before being introduced into the vacuum chamber 340 of the ion beam irradiation apparatus.                     

When the valve 360 of the ion beam irradiation apparatus is opened, the stage 310 is transferred into the vacuum chamber 340 and set.

In this case, two substrates 320 are transferred into the vacuum chamber 340, and the two substrates 320 are vertically arranged with respect to the moving direction, so that the two substrates 320 move side by side in parallel with the moving direction. The ion beam is irradiated while the 320 is inclined at a predetermined angle θ symmetrically with respect to the moving direction and is moved in the vacuum chamber 340, and the substrate is irradiated onto the substrate 320 by the ion beam 330. The entire surface of 320 is oriented.

That is, the stage 310 holding the substrate 320 in the vacuum chamber 340 of the ion beam irradiating apparatus moves at a constant speed in one direction, thereby allowing a bar-type ion gun 302. The entire surface of the alignment layer 350 formed on the substrate 320 inclined at a predetermined angle θ by the ion beam 330 drawn out at may be aligned to form a desired alignment direction and a pretilt angle. .

Here, since the stage 310 is moving at a constant speed, the alignment layer 350 formed on the substrate 320 is oriented with the ion beam 330 irradiated at an angle to the substrate 320 so that the entire surface is aligned. It will form a pretilt angle.

When the alignment process is completed over the entire surface of the two substrates 320 by a single ion beam irradiation by the bar type ion gun 302, the valve 360 of the ion beam irradiation apparatus is opened and the stage ( 310 is discharged to the outside of the vacuum chamber 340.

5 is a conceptual partial perspective view of the ion beam irradiation apparatus according to the present invention, showing a process in which the substrate is oriented by the ion beam.

Referring to FIG. 5, the ion beams 330 drawn from the bar type ion gun 302 are arranged in a direction perpendicular to the moving direction, and the two substrates 320 move side by side in the moving direction. The two substrates 320 are inclined at a constant angle θ symmetrically with respect to the axis of movement. That is, two substrates 320 are arranged in parallel with an axis perpendicular to the axis of movement direction of the substrate 320, and the two substrates 320 move side by side in parallel with the direction of movement.

In this case, the substrate 320 is moved in one direction, and thus the entire surface of the alignment layer 350 is aligned by the ion beam 330 drawn from the ion gun 302.

Here, the substrate 320 is preferably moved at a constant speed for uniformity of the orientation, and the ion gun 302 draws a predetermined amount of the ion beam 330 for a unit time and a unit area.

Since the two substrates 320 are arranged in a direction perpendicular to the moving direction and the two substrates 320 are inclined at an angle θ symmetrically with respect to the moving direction, the ion beam is irradiated, An entire surface of the alignment layer 350 is aligned by the ion beam 330 irradiated onto the substrate 320.

(Second embodiment)

6 is a view schematically showing the configuration of an ion beam irradiation apparatus as another embodiment according to the present invention.

As shown in FIG. 6, in the ion beam irradiation apparatus according to the present invention, as the substrate 420 moves in one direction, the ion beam 430 is irradiated onto the alignment layer 450.

The ion beam irradiation apparatus is the same as described in detail above, and will be described below.                     

Here, the substrate moving when irradiating the ion beam to the substrate using the ion beam irradiation apparatus has a different arrangement.

Referring to FIG. 6, the ion beam irradiation apparatus ionizes the injected gas into ions, accelerates the ionized ions, and discharges the ionized ions to the substrate 420, and the ion beam source 400. A vacuum chamber 440 allowing the ion beam 430 to be irradiated by going straight to the substrate 420, and a stage in which the substrate 420 is fixed within the vacuum chamber 440 to move in one direction. 410, and a valve 460 capable of discharging gas at each end of the ion beam irradiation and moving the stage 410 from outside to inside and from inside to outside.

The ion beam source 400 is a plasma forming unit 401 to form a plasma by the injection gas is separated into ions and electrons, and the ion beam 430 formed in the plasma forming unit 401 is accelerated to the substrate 420 It includes a ion gun (402) withdrawn).

In this case, the substrate 420 on which the alignment layer 450 is coated is mounted on the stage 410 to move together. The alignment layer 450 includes polyimide, SiO ₂ , SiC, Si ₃ N _4. , Al ₂ O ₃ , CeO ₂ , SnO ₂ , glass, ZnTiO ₂ , DLC (Diamond-Like Carbon) can be used.

In the vacuum chamber 440, the substrate 420 is fixed on the stage 410, and may be tilted at a predetermined angle and fixed and moved in one direction to obtain a desired pretilt angle. Therefore, the ion beam 430 drawn out through the ion gun 402 is inclined at a predetermined angle to the substrate 420.

In this case, two substrates 420 are transferred and set into the vacuum chamber 440 in the substrate 420 that is fixedly transported on the stage 410 before being introduced into the ion beam irradiation apparatus.

The two substrates 420 are arranged in a direction parallel to the moving direction, and the two substrates 420 are inclined at a predetermined angle θ symmetrically with respect to the direction perpendicular to the moving direction to form the vacuum chamber 440. The ion beam 430 is irradiated while being moved within the X-ray, and the entire surface of the substrate 420 is oriented by the ion beam 430 irradiated to the substrate 420.

Here, the stage 410 holding the substrate 420 in the vacuum chamber 440 of the ion beam irradiation apparatus moves at a constant speed in one direction to cause the ion beam 430 to be extracted from the ion gun 402. The entire surface of the substrate 420 inclined at a predetermined angle θ may be aligned to form a desired pretilt angle on the alignment layer 450 formed on the substrate 420.

According to the present invention, since two substrates 420 can be oriented by one irradiation of the ion beam, productivity is doubled.

As such, the ion beam 430 generated from the ion beam source 400 is extracted from the ion gun 402 and applied to the alignment layer 450 coated on the substrate 420 inclined at a predetermined angle θ. A desired orientation direction can be formed and the initial arrangement of the liquid crystal molecules, ie the pretilt angle of the liquid crystal molecules, is determined.

Hereinafter, a process of aligning the substrate 420 on which the alignment layer 450 is formed using the ion beam irradiation apparatus according to the present invention will be described in detail.

First, the alignment treatment process using the ion beam irradiation apparatus according to the present invention is largely divided into three steps. In the alignment process, the stage 410 holding the substrate 420 on which the alignment layer 450 is formed is loaded before being introduced into the ion beam irradiation apparatus, and the stage 410 is moved to move the ion beam. Irradiating the ion beam 430 to the substrate 420 when it enters the vacuum chamber 440 of the irradiating apparatus, and when the ion beam 430 is irradiated on the front surface of the substrate 420 to the outside of the ion beam irradiation apparatus. Evacuating.

An alignment layer 450 is formed on the substrate 420, and the substrate 420 is fixed to the stage 410 and loaded before being introduced into the vacuum chamber 440 of the ion beam irradiation apparatus.

When the valve 460 of the ion beam irradiation apparatus is opened, the stage 410 is transferred into the vacuum chamber 440 to be set.

In this case, two substrates 420 are sequentially transferred into the vacuum chamber 440, and the two substrates 420 are arranged in parallel to the moving direction, and sequentially move along the moving direction. The substrate 420 is inclined at a constant angle θ so as to be axially symmetrical in a direction perpendicular to the moving direction, and is moved in the vacuum chamber 440 to irradiate the ion beam and orient the entire surface of the substrate 420.

That is, the stage 410 holding the substrate 420 in the vacuum chamber 440 of the ion beam irradiation apparatus moves at a constant speed in one direction, so that a bar-type ion gun 402 is provided. The entire surface of the alignment layer 450 formed on the substrate 420 inclined at a predetermined angle θ may be oriented by the ion beam 430 that is extracted at, to form a desired pretilt angle.

Here, since the stage 410 is moving at a constant speed, the alignment layer 450 formed on the substrate 420 is oriented to the entire surface by the ion beam 430 irradiated at an angle to the substrate 420. A pretilt angle is formed.

When the alignment process is completed over the entire surface of the two substrates 420 by one ion beam irradiation by the bar type ion gun 402, the valve 460 of the ion beam irradiation apparatus is opened and the stage ( 410 is discharged outside the vacuum chamber 440.

7 is a conceptual partial perspective view of the ion beam irradiation apparatus according to the present invention, which shows a process in which the substrate is oriented by the ion beam.

Referring to FIG. 7, the ion beams 430 drawn out from the bar type ion gun 402 are arranged in parallel with respect to the moving direction so that a constant angle θ is symmetrically about an axis perpendicular to the moving direction. Is irradiated to the two substrates 420 inclined by. That is, the two substrates 420 are arranged in parallel along the moving direction axis, and are inclined with each other at a predetermined angle about the direction axis perpendicular to the moving direction axis.

In this case, the substrate 420 is sequentially moved into the chamber in one direction, and thus the entire alignment layer 450 is aligned by the ion beam 430 drawn from the ion gun 402.

In this case, the substrate 420 is preferably moved at a constant speed for uniformity of the orientation, and the ion gun 402 extracts a predetermined amount of the ion beam 430 for a unit time and a unit area.

The two substrates 420 are arranged in parallel to the moving direction, and the ion gun 402 is moved while the two substrates 420 are inclined at a predetermined angle θ symmetrically to the axis in a direction perpendicular to the moving direction. Since the ion beam 430 is irradiated from, the entire surface of the alignment layer 450 is aligned by the ion beam 430 irradiated onto the substrate 420.

(Third embodiment)

FIG. 8 is a view schematically showing a process in which a substrate is oriented in an ion beam irradiation apparatus as another embodiment according to the present invention.

As described above, the ion beam irradiation apparatus according to the present invention is the same as described above, and the substrate moving when irradiating the ion beam to the substrate using the ion beam irradiation apparatus has a different arrangement.

Referring to FIG. 8, four substrates 520 are transferred into the ion beam irradiation apparatus, and the substrate 520 is arranged in parallel with the moving direction with a pair of substrates arranged perpendicularly to the moving direction. Consisting of a pair of substrates.

Here, the substrate 520 is inclined at a predetermined angle (θ) inside the ion beam irradiation apparatus to have a desired orientation characteristics, the two inclined axes are perpendicular to each other.

The pair of substrates 520 arranged perpendicular to the movement direction incline the movement direction symmetrically to the axis, and the pair of substrates 520 arranged parallel to the movement direction are perpendicular to the movement direction. It is tilted symmetrically about the axis.

In this case, the two pairs of substrates 520 may have various arrangement methods in the region where the ion beam is irradiated.

Each of the four substrates 520 is fixed to a stage and moved together in one direction. Accordingly, the four substrates 520 are irradiated from the ion gun 502 by one ion beam irradiation. The entire surface of the alignment film 550 of 520 is simultaneously aligned.

Here, the substrate 520 is preferably moved at a constant speed for uniformity of the orientation, and the ion gun 502 extracts a predetermined amount of the ion beam 530 for a unit time and a unit area.

Hereinafter, a process of aligning the substrate 520 forming the alignment layer 550 using the ion beam irradiation apparatus according to the present invention will be described in detail.

First, the alignment treatment process using the ion beam irradiation apparatus according to the present invention is largely divided into three steps. In the alignment treatment process, a stage holding the substrate 520 forming the alignment layer 550 is loaded before being introduced into the ion beam irradiation apparatus, and the stage is moved to vacuum the ion beam irradiation apparatus. Irradiating the ion beam 530 to the substrate 520 when it enters the chamber, and exiting the ion beam irradiation apparatus when the ion beam 530 is irradiated on the front surface of the substrate 520. .

An alignment layer 550 is formed on the substrate 520, and the substrate 520 is fixed to a stage before being loaded into the vacuum chamber of the ion beam irradiation apparatus.

Then, when the valve of the ion beam irradiation device is opened, the stage is transferred into the vacuum chamber and set.

At this time, four substrates 520 are transferred into the vacuum chamber, and the pair of substrates 520 arranged perpendicularly to the moving direction incline the moving direction symmetrically to the axis and with respect to the moving direction. The pair of substrates 520 arranged in parallel are inclined symmetrically with respect to the axis perpendicular to the direction of movement so that the four substrates 520 are fixed to a stage and moved together in one direction. The entire surface of the four substrates 520 is simultaneously oriented by one ion beam irradiation by the ion beam 530 drawn out from the gun 502.

When the alignment process is completed over the entire surface of the four substrates 520 by one ion beam irradiation by the bar type ion gun 502, the valve of the ion beam irradiation apparatus is opened and the stage is a vacuum chamber. It is discharged to the outside.

Although the present invention has been described in detail through specific embodiments, this is for explaining the present invention in detail, and the ion beam irradiation apparatus and method thereof according to the present invention are not limited thereto, and the technical field of the present invention is not limited thereto. It is apparent that modifications and improvements are possible by those skilled in the art.

The present invention provides a method for aligning a plurality of substrates by ion beam irradiation at the same time using an ion beam irradiation apparatus, by placing the substrate at an angle at an angle to align the plurality of substrates at the same time by one ion beam irradiation. This can increase the productivity.

Claims (14)

A plurality of substrates disposed inclined at a predetermined angle in the vacuum chamber and moving in one direction; It includes; ion gun (Ion gun) for irradiating the ion beam spaced at a predetermined interval on the substrate, An alignment layer is formed on the plurality of substrates, The plurality of substrates are arranged perpendicular to the direction of movement, the ion beam irradiation apparatus, characterized in that inclined to each other symmetrically about the axis of the movement direction. delete delete A plurality of substrates disposed inclined at a predetermined angle in the vacuum chamber and moving in one direction; It includes; ion gun (Ion gun) for irradiating the ion beam spaced at a predetermined interval on the substrate, An alignment layer is formed on the plurality of substrates, And the plurality of substrates are arranged parallel to the moving direction and inclined with respect to the direction axis perpendicular to the moving direction. A plurality of substrates disposed inclined at a predetermined angle in the vacuum chamber and moving in one direction; It includes; ion gun (Ion gun) for irradiating the ion beam spaced at a predetermined interval on the substrate, An alignment layer is formed on the plurality of substrates, The plurality of substrates may include first substrates arranged perpendicularly to a moving direction and second substrates arranged parallel to the moving direction, and the inclination axes of the first and second substrates may be perpendicular to each other. Ion beam irradiation apparatus. The method according to any one of claims 1, 4 and 5, The ion gun is an ion beam irradiation apparatus, characterized in that the bar (type). Entering and arranging a plurality of substrates into the vacuum chamber; Placing the plurality of substrates inclined at a predetermined angle in a vacuum chamber; And irradiating an ion beam while the substrate is moved in one direction. An alignment film is formed on the substrate, And a plurality of substrates simultaneously have an orientation direction and a pretilt angle when the ion beam is irradiated. delete The method of claim 7, wherein In the step of arranging the plurality of substrates, And the substrates are arranged perpendicular to the movement direction and then inclined symmetrically with respect to the axis in the movement direction. The method of claim 7, wherein In the step of arranging the plurality of substrates, And the substrates are arranged parallel to the movement direction and then inclined symmetrically with respect to the axis in a direction perpendicular to the movement direction. The method of claim 7, wherein In the step of arranging the plurality of substrates, The plurality of substrates may include first substrates arranged perpendicular to the moving direction and second substrates arranged parallel to the moving direction, and the inclination axes of the first substrates and the second substrates may be perpendicular to each other. An ion beam irradiation method, characterized in that. The method of claim 7, wherein The ion beam irradiation method, characterized in that for irradiating at least once. The method of claim 7, wherein And a plurality of substrates are simultaneously oriented at the time of irradiating the ion beam. delete

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