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KR100896025B1 - Semiconductor manufacturing device with powder prevention trap - Google Patents

Semiconductor manufacturing device with powder prevention trap Download PDF

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KR100896025B1
KR100896025B1 KR1020070076629A KR20070076629A KR100896025B1 KR 100896025 B1 KR100896025 B1 KR 100896025B1 KR 1020070076629 A KR1020070076629 A KR 1020070076629A KR 20070076629 A KR20070076629 A KR 20070076629A KR 100896025 B1 KR100896025 B1 KR 100896025B1
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gas
trap
heating wire
sheath heating
heat
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KR20090012636A (en
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임유동
김경민
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(주)티티에스
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/005—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by heat treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2258/00—Sources of waste gases
    • B01D2258/02—Other waste gases
    • B01D2258/0216—Other waste gases from CVD treatment or semi-conductor manufacturing

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  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
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  • Oil, Petroleum & Natural Gas (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

본 발명은 반도체 제조공정 후 발생하는 미반응가스인 파우더(불순물)의 제거를 위해 히터를 내장한 원통형 구조의 트랩을 진공라인에 장착한 기술이다. 본 발명의 트랩은 고온에서의 가스 분해 효과 향상을 위해 가스가 흐르는 내부가 아닌 외부에 취부되어 트랩 내부에 열을 가하는 쉬즈열선과, 상기 쉬즈열선의 발열로 인한 안정성을 위해 냉각수가 흐르는 쿨링라인과, 상기 쉬즈열선의 열 손실 최소화를 위해 외부와 차단하는 고온용 단열재와, 상기 쉬즈열선으로부터의 열전달에 의해 미반응 가스를 분해하는 3단 구조의 홀 플레이트와, 상기 쉬즈열선의 발열온도를 조절하는 써모커플로 구성된다.The present invention is a technology in which a trap of a cylindrical structure with a heater is installed in a vacuum line to remove powder (impurity), which is an unreacted gas generated after a semiconductor manufacturing process. The trap of the present invention is a sheath heating wire which is mounted outside the gas flow to improve the gas decomposition effect at a high temperature to heat the inside of the trap, and a cooling line through which cooling water flows for stability due to heat generation of the sheath heating wire; And a three-stage structure for decomposing unreacted gas by heat transfer from the sheath heating wire, a high-temperature insulating material blocking the outside to minimize the heat loss of the sheath heating wire, and controlling the heating temperature of the sheath heating wire. It consists of a thermocouple.

반도체제조장치, 파우더, 트랩 Semiconductor Manufacturing Equipment, Powder, Trap

Description

파우더 방지용 트랩이 구성된 반도체 제조장치{Semiconductor manufacturing apparatus having trap for vacuum line}Semiconductor manufacturing apparatus having trap for vacuum prevention

본 발명은 파우더(불순물) 방지용 트랩이 구성된 반도체 제조장치에 관한 것으로써, 특히 반도체 제조공정 후 발생하는 미반응가스인 파우더 제거를 위해 히터를 내장한 원통형 구조의 트랩을 진공라인에 장착한 기술이다.BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a semiconductor manufacturing apparatus including a trap for preventing powder (impurity), and is a technology in which a trap having a cylindrical structure with a heater is installed in a vacuum line to remove powder, which is an unreacted gas generated after a semiconductor manufacturing process. .

반도체 및 LCD 제조장치에 있어서, 공정 후 발생하는 미반응 가스는 고온의 챔버내에서 낮은 온도인 상온의 진공라인으로 유입되면서 기체 상태에서 고체 상태로 환원된다. In the semiconductor and LCD manufacturing apparatus, the unreacted gas generated after the process is reduced from the gas state to the solid state as it flows into the vacuum line at room temperature which is a low temperature in the high temperature chamber.

이 같이 기체 상태에서 고체 상태로 환원된 공정 부산물인 파우더는 챔버 내부 진공 조절을 위해 진공라인에 장착된 밸브에 흡착되어 밸브의 기능 상실을 초래하게 된다.The powder, which is a process by-product reduced from the gaseous state to the solid state, is adsorbed to the valve mounted in the vacuum line for controlling the vacuum in the chamber, resulting in a malfunction of the valve.

또한 이러한 불순물 파우더는 유지보수 측면에서도 커다란 손실을 주게 되며, 진공 펌프 내부에 흡착될 경우 수명 단축의 주원인이 되기도 한다.In addition, such impurity powder is a major loss in terms of maintenance, and when adsorbed inside the vacuum pump may be a major cause of shortening the life.

따라서 본 발명은 상기와 같은 종래 반도체 제조장치에 수반되는 문제점을 개선하기 위하여 이루어진 것으로써, 본 발명의 목적은 공정 미반응 가스의 환원 및 결합으로 인한 파우더 억제를 위해 고온 발열에 의해 공정 가스를 자체 분해시킬 수 있도록 한 트랩이 진공라인에 장착된 반도체 제조장치를 제공하는데 있다.Therefore, the present invention is made to improve the problems associated with the conventional semiconductor manufacturing apparatus as described above, an object of the present invention is to self-process the process gas by high temperature heat generation to suppress the powder due to the reduction and bonding of the unreacted gas One trap to enable disassembly is to provide a semiconductor manufacturing apparatus mounted on a vacuum line.

상기 목적을 달성하기 위한 본 발명의 파우더 방지용 트랩이 구성된 반도체 제조장치는, 샤워헤드로부터 가스를 공급받으면서 웨이퍼 제조공정을 수행하는 공정챔버와, 상기 공정챔버에서 웨이퍼 제조공정을 통해 발생하는 가스의 배출라인으로 제공되는 진공라인과, 상기 공정챔버에서의 제조공정이 수행된 웨이퍼 또는 글래스를 막을 증착(CVD 공정)시키기 위한 공기 펌핑기능을 수행하는 건조펌프와, 상기 공정챔버로부터 진공라인으로 유입되는 가스의 압력을 제어하도록 진공라인에 장착된 스로틀밸브로 구성된 반도체 제조장치에 있어서, 상기 진공라인에는 고온 발열에 의해 공정 후 발생되는 미반응 가스로 인한 파우더 발생을 방지하도록 트랩이 장착된 것을 특징으로 한다.In order to achieve the above object, a semiconductor manufacturing apparatus including a powder prevention trap according to an embodiment of the present invention includes a process chamber performing a wafer manufacturing process while receiving gas from a shower head, and discharge of gas generated through the wafer manufacturing process in the process chamber. A vacuum pump provided as a line, a drying pump which performs an air pumping function for depositing a film (CVD process) of a wafer or glass subjected to the manufacturing process in the process chamber, and a gas flowing into the vacuum line from the process chamber A semiconductor manufacturing apparatus comprising a throttle valve mounted on a vacuum line to control pressure of the vacuum line, wherein the vacuum line is equipped with a trap to prevent powder generation due to unreacted gas generated after the process due to high temperature heat generation. .

본 발명의 트랩은 고온에서의 가스 분해 효과 향상을 위해 트랩 내부에 열을 가하도록 가스가 흐르는 내부가 아닌 외부에 취부된 쉬즈열선; 상기 쉬즈열선의 발열로 인한 안정성을 위해 냉각수가 흐르는 쿨링라인; 상기 쉬즈열선의 열 손실 최 소화를 위해 외부와 차단시키는 고온용 단열재; 상기 쉬즈열선로부터의 열전달에 의해 미반응 가스를 분해하는 3단 구조의 홀 플레이트; 상기 쉬즈열선의 발열온도를 조절하는 써모커플로 구성된 것을 특징으로 한다.The trap of the present invention includes a sheath heating wire which is mounted on the outside instead of the inside of the gas flow to apply heat to the inside of the trap to improve the gas decomposition effect at a high temperature; A cooling line through which cooling water flows for stability due to heat generation of the sheath heating wire; High temperature insulation to block the outside to minimize heat loss of the sheath heating wire; A hall plate having a three-stage structure that decomposes unreacted gas by heat transfer from the sheath heating wire; Characterized in that the thermocouple is configured to control the heating temperature of the sheath heating wire.

본 발명의 트랩 내부는 쉬즈열선을 통해 200~1200℃ 까지 가열되는 것을 특징으로 한다.The trap interior of the present invention is characterized in that it is heated to 200 ~ 1200 ℃ through the sheath heating wire.

본 발명의 홀 플레이트는 타공된 구조이며, 각각의 홀 플레이트의 다수 개 홀은 서로 엇갈림 구조로 배치된 것을 특징으로 한다.The hole plate of the present invention is a perforated structure, characterized in that the plurality of holes of each hole plate are arranged in a staggered structure to each other.

본 발명의 홀 플레이트는 챔버로부터 배출되는 미반응 가스에 직접적으로 열을 가하는 역할을 하며, 다수 개의 홀의 엇갈림 배치에 의해 트랩 내부에서 충분한 열에너지를 받을 수 있도록 가스 흐름의 변화 및 정체를 담당하여 가스 분해 효율을 증가시키는 것을 특징으로 한다. The hole plate of the present invention serves to directly heat the unreacted gas discharged from the chamber, and is responsible for the gas flow change and stagnation so as to receive sufficient heat energy inside the trap by the staggered arrangement of the plurality of holes. It is characterized by increasing the efficiency.

본 발명의 트랩 내부의 부피와 홀 플레이트의 홀 크기는 장치의 진공 성능을 고려하여 설계되는 것을 특징으로 한다. The volume inside the trap of the present invention and the hole size of the hole plate are designed in consideration of the vacuum performance of the device.

상술한 바와 같이 본 발명의 파우더 방지용 트랩이 구성된 반도체 제조장치에 따르면, 미반응 가스가 진공라인의 각종 밸브와 진공라인의 내벽에 파우더로서 흡착되지 않도록 고온의 트랩을 진공라인에 장착하므로 미반응 가스가 트랩 내부에서 분해되어 배기시킴으로써 반도체 제조효율 향상은 물론, 설비의 유지 보수가 용이하고, 원가를 절감할 수 있는 등의 커다란 효과가 있다. As described above, according to the semiconductor manufacturing apparatus including the powder preventing trap of the present invention, since the hot trap is mounted on the vacuum line so that the unreacted gas is not adsorbed as powder on the various valves of the vacuum line and the inner wall of the vacuum line, the unreacted gas By decomposing and evacuating inside the trap, the semiconductor manufacturing efficiency can be improved, maintenance of the equipment is easy, and cost can be reduced.

도 1은 본 발명의 파우더 방지용 트랩이 구성된 반도체 제조장치의 구성도, 도 2는 도 1의 트랩의 상세 구조 단면도, 도 3은 도 2의 홀 플레이트의 상세 구조도, 도 4는 도 2의 엇갈림 구조를 갖는 홀 플레이트에서의 가스 흐름도이다.1 is a configuration diagram of a semiconductor manufacturing apparatus configured with a powder preventing trap of the present invention, FIG. 2 is a detailed structural cross-sectional view of the trap of FIG. 1, FIG. 3 is a detailed structural diagram of the hole plate of FIG. 2, and FIG. 4 is a cross-sectional view of FIG. 2. It is a gas flowchart in the hall plate which has a structure.

도 1에 있어서, 본 발명의 파우더 방지용 트랩이 구성된 반도체 제조장치는 샤워헤드로부터의 가스를 공급받으면서 웨이퍼 제조공정을 수행하는 공정챔버(100)와, 상기 공정챔버(100)에서 웨이퍼 제조공정을 통해 발생하는 가스의 배출라인으로 제공되는 진공라인(1)과, 상기 공정챔버(100)에서의 제조공정이 수행된 웨이퍼 또는 글래스를 막을 증착(CVD 공정)시키기 위한 공기 펌핑기능을 수행하는 건조펌프(200)와, 상기 공정챔버(100)로부터 진공라인(1)으로 유입되는 가스의 압력을 제어하도록 진공라인(1)에 장착된 스로틀밸브(3)로 구성된 반도체 제조장치에 있어서, 상기 진공라인(1)에는 고온 발열에 의해 공정 후 발생되는 미반응 잔류가스로 인한 파우더 발생을 방지하도록 트랩(2)이 장착된 것을 특징으로 한다.1, the semiconductor manufacturing apparatus including the powder prevention trap according to the present invention includes a process chamber 100 for performing a wafer manufacturing process while receiving gas from a shower head, and a wafer manufacturing process in the process chamber 100. Drying pump for performing an air pumping function for depositing a film (CVD process) of the vacuum line (1) provided to the discharge line of the generated gas and the wafer or glass subjected to the manufacturing process in the process chamber 100 ( 200 and a throttle valve (3) mounted to the vacuum line (1) to control the pressure of the gas flowing into the vacuum line (1) from the process chamber (100), wherein the vacuum line ( 1) is characterized in that the trap (2) is mounted to prevent powder generation due to unreacted residual gas generated after the process by the high temperature heat.

상기 트랩(2)은 도 2에 도시한 바와 같이 원통형 구조로써 고온에서의 가스 분해 효과 향상을 위해 트랩(2) 내부에 열을 가하도록 가스가 흐르는 내부가 아닌 외부에 취부된 쉬즈열선(4)과, 상기 쉬즈열선(4)의 발열로 인한 안정성을 위해 냉각수가 흐르는 쿨링라인(5)과, 상기 쉬즈열선(4)의 열 손실 최소화를 위해 외부와 차단하는 고온용 단열재(6)와, 상기 쉬즈열선(4)로부터의 열전달에 의해 미반응 가스를 분해하는 3단 구조의 홀플레이트(7)(8)(9)와, 상기 쉬즈열선(4)의 발열온도를 조절하는 써모커플(10)로 구성된다. The trap 2 has a cylindrical structure as shown in FIG. 2, and a sheath heating wire 4 mounted on the outside instead of the inside through which the gas flows to apply heat to the trap 2 to improve the gas decomposition effect at a high temperature. And a cooling line 5 through which cooling water flows for stability due to heat generation of the sheath heating wire 4, and a high-temperature insulating material 6 blocking the outside to minimize heat loss of the sheath heating wire 4. Three-stage hole plates (7) (8) (9) for decomposing unreacted gas by heat transfer from the sheath heating wire (4), and a thermocouple (10) for controlling the heat generation temperature of the sheath heating wire (4). It consists of.

본 발명의 상기 트랩(2) 내부는 쉬즈열선(4)을 통해 약 200~1200℃ 까지 가열되며, 홀 플레이트(8)(9)(10)는 도 3에 도시한 바와 같이 타공된 구조로 되어 있다. 또한 도 4에 도시한 바와 같이 각각의 홀 플레이트(8)(9)(10)에 형성된 다수 개의 홀(71)(81)(91)은 서로 엇갈림 구조로 되어 있다.The inside of the trap (2) of the present invention is heated to about 200 ~ 1200 ℃ through the sheath heating wire (4), the hole plate (8) (9) (10) has a perforated structure as shown in FIG. have. Further, as shown in Fig. 4, the plurality of holes 71, 81, 91 formed in the respective hole plates 8, 9, 10 have a staggered structure.

본 발명의 상기 가열된 홀 플레이트(8)(9)(10)는 챔버(100)로부터 배출되는 미반응 가스에 직접적으로 열을 가하는 역할을 하며, 도 4에 도시한 바와 같이 각 홀(71)(81)(91)이 엇갈림 배치이므로 흐르는 가스가 트랩(2) 내부에서 충분한 열에너지를 받을 수 있도록 가스 흐름의 변화 및 정체를 담당하여(화살표로 표시됨) 가스 분해 효율을 증가시킨다. The heated hall plates 8, 9 and 10 of the present invention directly apply heat to the unreacted gas discharged from the chamber 100, and each hole 71 is shown in FIG. 4. Since 81 and 91 are staggered arrangements, gas flow efficiency is increased by the change and stagnation (indicated by the arrows) of the gas flow so that the flowing gas receives sufficient thermal energy inside the trap 2.

본 발명의 쿨링라인(5)은 외부공급장치(도시 생략)로부터 냉각수인 PCW가 공급되어 흐르는 파이프이다.The cooling line 5 of the present invention is a pipe through which PCW, which is cooling water, is supplied from an external supply device (not shown).

본 발명의 상기 트랩(1) 내부의 부피와 홀 플레이트(8)(9)(10)의 다수 개의 홀(71)(81)(91) 크기는 해당 장비의 진공 성능을 고려하여 설계되어야 한다.The volume inside the trap 1 of the present invention and the size of the plurality of holes 71, 81, 91 of the hole plates 8, 9, 10 should be designed in consideration of the vacuum performance of the equipment.

미설명부호 11은 트랩 인렛(inlet)단으로서 가스가 흘러 들어오는 부분을 나타내며, 12는 트랩 아웃렛(outlet)단으로서 가스가 빠져나가는 부분을 나타내는 것이다. Reference numeral 11 denotes a portion where gas flows in as a trap inlet stage, and 12 denotes a portion where gas escapes as a trap outlet outlet stage.

이 같이 구성된 본 발명의 트랩(2)은 가스 유로 외부에 취부된 쉬즈열선(4)을 통해 트랩(2) 내부의 온도를 약 200~1200℃ 까지 가열하므로 공정 미반응 가스의 재환원을 방지함과 동시에, 내부에 장착된 홀 플레이트(7)(8)(9)의 홀(71)(81)(91)에 의해 다른 가스와의 결합을 차단하고 자체 분해 되도록 하므로 파우더 발생을 억제한다. The trap 2 of the present invention configured as described above heats the temperature inside the trap 2 to about 200-1200 ° C. through the sheath heating wire 4 mounted outside the gas flow path, thereby preventing re-reduction of unreacted gas. At the same time, the holes 71, 81, 91 of the hole plates 7, 8, 9 mounted therein block the coupling with other gases and self-decompose, thereby suppressing powder generation.

예를 들어 SiH2Cl2와 NH3를 사용하는 공정에서 본 발명의 트랩(2)을 사용하면 미반응 가스에 고온의 열을 가하므로 NH3가 N2, H2로 분해된 후 건조펌프(200)에 의해 펌핑되어 공정의 부산물인 NH4Cl의 생성을 방지할 수 있다.For example, when the trap 2 of the present invention is used in a process using SiH 2 Cl 2 and NH 3 , NH 3 is decomposed into N 2 and H 2 since a high temperature heat is applied to the unreacted gas. 200) to prevent the production of NH 4 Cl, a byproduct of the process.

본 발명의 트랩(2)은 기존 트랩에서와 같이 공정 후 발생된 부산물인 파우더를 흡착시켜 걸러주는 방식이 아닌, 트랩(2) 내부를 고온으로 유지시켜 공정 가스의 분해, 펌핑 및 배기가 이루어질 수 있도록 한다. The trap 2 of the present invention is not a method of adsorbing and filtering the by-product powder generated after the process as in the existing trap, the decomposition of the process gas, pumping and exhaust can be made by keeping the inside of the trap 2 at a high temperature Make sure

따라서 진공라인(1)에 장착된 진공 조절용 밸브(3) 및 진공라인(1) 내부에 대한 공정가스의 환원으로 인한 파우더 흡착 발생을 미연에 방지하는 것이다. Therefore, to prevent the adsorption of powder due to the reduction of the process gas to the vacuum control valve 3 and the vacuum line (1) mounted on the vacuum line (1) in advance.

도 1은 본 발명의 파우더 방지용 트랩이 구성된 반도체 제조장치의 구성도.1 is a block diagram of a semiconductor manufacturing apparatus configured of a powder prevention trap of the present invention.

도 2는 도 1의 트랩의 상세 구조 단면도.FIG. 2 is a detailed structural cross-sectional view of the trap of FIG. 1. FIG.

도 3은 도 2의 홀 플레이트의 상세 구조도3 is a detailed structural diagram of the hole plate of FIG.

도 4는 도 2의 엇갈림 구조를 갖는 홀 플레이트에서의 가스 흐름도.4 is a gas flow diagram in the hall plate with the staggered structure of FIG.

* 도면의 주요 부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings

1: 진공라인 2: 트랩1: vacuum line 2: trap

3: (스로틀)밸브 4: 쉬즈열선3: (throttle) valve 4: sheath heating wire

5: 쿨링 라인 6: 단열재5: cooling line 6: insulation

7: 제1 홀 플레이트 8: 제2 홀 플레이트7: first hole plate 8: second hole plate

9: 제3 홀 플레이트 10: 써모 커플9: 3rd Hall Plate 10: Thermo Couple

11. 트랩 inlet 단 12. 트랩 outlet 단 11.Trap inlet stage 12.Trap outlet stage

13. 가스 펌핑 유로13. Gas pumping flow path

Claims (6)

샤워헤드로부터의 가스를 공급받으면서 웨이퍼 또는 글래스 제조공정을 수행하는 공정챔버(100)와, 상기 공정챔버(100)에서 웨이퍼 제조공정을 통해 발생하는 가스의 배출라인으로 제공되는 진공라인(1)과, 상기 공정챔버(100)에서의 제조공정이 수행된 웨이퍼막을 증착시키기 위한 공기 펌핑기능을 수행하는 건조펌프(200)와, 상기 공정챔버(100)로부터 진공라인(1)으로 유입되는 가스의 압력을 제어하도록 진공라인(1)에 장착된 스로틀밸브(3)로 구성된 반도체 제조장치에 있어서, A process chamber 100 for performing a wafer or glass manufacturing process while receiving gas from a shower head, and a vacuum line 1 provided as a discharge line of gas generated through the wafer manufacturing process in the process chamber 100; A dry pump 200 performing an air pumping function for depositing a wafer film on which the manufacturing process in the process chamber 100 is performed, and a pressure of a gas flowing into the vacuum line 1 from the process chamber 100; In the semiconductor manufacturing apparatus consisting of a throttle valve (3) mounted to the vacuum line (1) to control the 상기 진공라인(1)에는 고온 발열에 의해 공정 후 발생되는 미반응 잔류가스로 인한 파우더 발생을 방지하기 위하여 고온에서의 가스분해 효과향상을 위해 내부에 열을 가하도록 가스가 흐르는 내부가 아닌 외부에 취부된 쉬즈열선(4); 상기 쉬즈열선(4)의 발열로 인한 안정성을 위해 냉각수가 흐르는 쿨링라인(5); 상기 쉬즈열선(4)의 열손실 최소화를 위해 외부와 차단하는 고온용 단열재(6); 상기 쉬즈열선(4)으로부터의 열전달에 의해 미반응 가스를 분해하는 3단 구조의 홀플레이트(7)(8)(9); 상기 쉬즈열선(4)의 발열온도를 조절하는 써모커플(10)로 구성된 트랩(2)이 장착된 것을 특징으로 하는 반도체 제조장치.The vacuum line (1) is not in the interior of the gas flow to apply heat to the inside to improve the gas decomposition effect at high temperature in order to prevent powder generation due to unreacted residual gas generated after the process by the high temperature heat generation A mounted sheath heating wire 4; A cooling line 5 through which cooling water flows for stability due to heat generation of the sheath heating wire 4; A high temperature heat insulating material (6) for blocking the outside to minimize heat loss of the sheath heating wire (4); Hole plates (7) (8) (9) having a three-stage structure for decomposing unreacted gas by heat transfer from the sheath heating wire (4); And a trap (2) composed of a thermocouple (10) for controlling the heating temperature of said sheath heating wire (4). 삭제delete 삭제delete 제1항에 있어서, 상기 홀플레이트(7)(8)(9)는 타공 구조로서 챔버(100)로부터 배출되는 미반응 가스에 직접적으로 열을 가함과 동시에 트랩(2) 내부에서 열에너지를 받아 가스흐름의 변화 및 정제를 담당하여 가스분해효율을 증가시키도록 각각 다수 개의 홀(71)(81)(91)이 서로 엇갈린 구조로 배치형성된 것을 특징으로 하는 반도체 제조장치.The hole plate (7) (8) (9) is a perforated structure that directly heats the unreacted gas discharged from the chamber (100) and receives heat energy inside the trap (2). And a plurality of holes (71) (81) (91) are arranged in a staggered structure to each other to increase the gas decomposition efficiency by the flow change and purification. 삭제delete 삭제delete
KR1020070076629A 2007-07-31 2007-07-31 Semiconductor manufacturing device with powder prevention trap KR100896025B1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11660563B2 (en) 2020-11-09 2023-05-30 Samsung Electronics Co., Ltd. Apparatus for collecting by-product and method for collecting by-product

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09157832A (en) * 1995-11-30 1997-06-17 Sony Corp Deposition preventive plate and vacuum device using the same
KR100595010B1 (en) * 2006-01-25 2006-06-30 이승룡 Reaction byproduct collection device in semiconductor process
KR100676927B1 (en) * 2006-05-04 2007-02-02 주식회사 미래보 By-product Collector of Semiconductor Device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09157832A (en) * 1995-11-30 1997-06-17 Sony Corp Deposition preventive plate and vacuum device using the same
KR100595010B1 (en) * 2006-01-25 2006-06-30 이승룡 Reaction byproduct collection device in semiconductor process
KR100676927B1 (en) * 2006-05-04 2007-02-02 주식회사 미래보 By-product Collector of Semiconductor Device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11660563B2 (en) 2020-11-09 2023-05-30 Samsung Electronics Co., Ltd. Apparatus for collecting by-product and method for collecting by-product

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