KR100873772B1 - 금속/세라믹 접합 제품 - Google Patents
금속/세라믹 접합 제품 Download PDFInfo
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- KR100873772B1 KR100873772B1 KR1020020071832A KR20020071832A KR100873772B1 KR 100873772 B1 KR100873772 B1 KR 100873772B1 KR 1020020071832 A KR1020020071832 A KR 1020020071832A KR 20020071832 A KR20020071832 A KR 20020071832A KR 100873772 B1 KR100873772 B1 KR 100873772B1
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- metal
- ceramic
- metal plate
- bonded article
- filler metal
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 334
- 239000002184 metal Substances 0.000 title claims abstract description 334
- 239000000919 ceramic Substances 0.000 title claims abstract description 148
- 239000000945 filler Substances 0.000 claims abstract description 118
- 239000000758 substrate Substances 0.000 claims abstract description 68
- 238000005219 brazing Methods 0.000 claims description 62
- 238000000034 method Methods 0.000 claims description 48
- 238000011282 treatment Methods 0.000 claims description 33
- 239000010949 copper Substances 0.000 claims description 25
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 24
- 229910052802 copper Inorganic materials 0.000 claims description 24
- 238000007747 plating Methods 0.000 claims description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- 238000004321 preservation Methods 0.000 claims description 6
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 150000001247 metal acetylides Chemical class 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 3
- 230000035939 shock Effects 0.000 abstract description 16
- 238000005452 bending Methods 0.000 description 31
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 14
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 12
- 238000005530 etching Methods 0.000 description 11
- 239000000047 product Substances 0.000 description 11
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 9
- 239000000126 substance Substances 0.000 description 8
- 239000000243 solution Substances 0.000 description 7
- 238000011161 development Methods 0.000 description 6
- 230000018109 developmental process Effects 0.000 description 6
- 238000005476 soldering Methods 0.000 description 6
- 238000013461 design Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 4
- 239000003513 alkali Substances 0.000 description 4
- 239000007795 chemical reaction product Substances 0.000 description 4
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 4
- 238000007772 electroless plating Methods 0.000 description 4
- 238000005304 joining Methods 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000011259 mixed solution Substances 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 230000035882 stress Effects 0.000 description 3
- -1 Al-Si or Al-Si-Ti Chemical compound 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910018104 Ni-P Inorganic materials 0.000 description 2
- 229910018536 Ni—P Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 231100001010 corrosive Toxicity 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 150000007522 mineralic acids Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N 1H-pyrrole Natural products C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 1
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 description 1
- 229910008332 Si-Ti Inorganic materials 0.000 description 1
- 229910006749 Si—Ti Inorganic materials 0.000 description 1
- YZCKVEUIGOORGS-NJFSPNSNSA-N Tritium Chemical compound [3H] YZCKVEUIGOORGS-NJFSPNSNSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-M phosphinate Chemical compound [O-][PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-M 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
- B32B9/04—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B9/041—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material of metal
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2311/00—Metals, their alloys or their compounds
- B32B2311/02—Noble metals
- B32B2311/08—Silver
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2311/00—Metals, their alloys or their compounds
- B32B2311/24—Aluminium
Landscapes
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Ceramic Products (AREA)
Abstract
Description
돌출 길이(㎛) | 스커트 전개 길이(㎛) | 노 통과 저항(개수) | 초기 굽힘 강도(㎫) | 3회의 노 통과 후의 굽힘 강도 | |
예 1 | 102 | < 0 | 58 | ||
예 2 | 101 | < 0 | 58 | ||
예 3 | 95 | 3 | 68 | ||
예 4 | 124 | < 0 | 84 | ||
예 5 | 88 | 11 | 78 | 615 | 535 |
예 6 | 133 | < 0 | 98 | ||
예 7 | 73 | 8 | 74 | ||
예 8 | 82 | 4 | 58 | 609 | 570 |
예 9 | 83 | 11 | 42 | ||
예 10 | 93 | 5 | 52 | ||
예 11 | 65 | 21 | 32 | ||
예 12 | 53 | 23 | 32 | ||
예 13 | 62 | 31 | 32 | ||
예 14 | 54 | 15 | 40 | ||
예 15 | 54 | 26 | 26 | ||
예 16 | 55 | 25 | 30 | ||
예 17 | 55 | 26 | 32 | ||
예 18 | 134 | < 0 | 92 | ||
예 19 | 52 | 18 | 26 | 622 | 549 |
예 20 | 62 | 10 | 36 | ||
예 21 | 62 | 20 | 38 | ||
비교예 1 | -20 | 45 | 11 | 548 | 203 |
비교예 2 | 0 | 30 | 19 | 590 | 331 |
비교예 3 | 30 | 15 | 25 | 610 | 510 |
Claims (16)
- 세라믹 기판과, 경납땜 충전재 금속을 통해 상기 세라믹 기판에 접합되는 금속판을 포함하고,상기 경납땜 충전재 금속은 30 ㎛ 초과, 250 ㎛ 이하의 길이로 상기 금속판의 저부면으로부터 돌출되는 금속/세라믹 접합 제품.
- 제1항에 있어서, 상기 길이는 50 ㎛ 내지 200 ㎛의 범위에 있는 것을 특징으로 하는 금속/세라믹 접합 제품.
- 제1항에 있어서, 저부면의 면적이 상부면의 면적보다 큰 경우의 거리를 양이라고 하면, 상기 금속판의 저부면의 일단부에서 상기 금속판의 주 평면에 수직인 평면과, 금속판의 저부면의 일단부와 동일한 측면 상에서 상기 금속판의 상부면의 일단부에서 상기 금속판의 주 평면에 수직인 평면 사이의 거리는 50 ㎛ 이하인 금속/세라믹 접합 제품.
- 제1항에 있어서, 상기 세라믹 기판은 산화물, 질화물 및 탄화물로 구성되는 군으로부터 선택된 재료로 형성되는 금속/세라믹 접합 제품.
- 제1항에 있어서, 상기 금속판은 구리, 알루미늄, 구리를 함유하는 합금 및 알루미늄을 함유하는 합금으로 구성되는 군으로부터 선택된 재료로 형성되는 금속/세라믹 접합 제품.
- 제1항에 있어서, 상기 경납땜 충전재 금속은 은 및 활성 금속을 함유하는 금속/세라믹 접합 제품.
- 제1항에 있어서, 상기 경납땜 충전재 금속은 알루미늄을 포함하는 금속/세라믹 접합 제품.
- 제1항에 있어서, 상기 금속판 및 상기 경납땜 충전재 금속은 니켈 도금, 니켈 합금 도금, 금 도금 및 보전 처리 중 하나 이상에 의해 처리되는 하는 금속/세라믹 접합 제품.
- 세라믹 기판과, 경납땜 충전재 금속을 통해 상기 세라믹 기판에 접합되는 금속판을 포함하고,상기 경납땜 충전재 금속은 상기 금속판 두께의 25% 이상의 길이로 상기 금속판의 저부면으로부터 돌출되는 금속/세라믹 접합 제품.
- 제9항에 있어서, 상기 길이는 상기 금속판 두께의 30% 이상인 금속/세라믹 접합 제품.
- 제9항에 있어서, 저부면의 면적이 상부면의 면적보다 큰 경우의 거리를 양이라고 하면, 상기 금속판의 저부면의 일단부에서 상기 금속판의 주 평면에 수직인 평면과, 금속판의 저부면의 일단부와 동일한 측면 상에서 상기 금속판의 상부면의 일단부에서 상기 금속판의 주 평면에 수직인 평면 사이의 거리는 50 ㎛ 이하인 금속/세라믹 접합 제품.
- 제9항에 있어서, 상기 세라믹 기판은 산화물, 질화물 및 탄화물로 구성되는 군으로부터 선택된 재료로 형성되는 하는 금속/세라믹 접합 제품.
- 제9항에 있어서, 상기 금속판은 구리, 알루미늄, 구리를 함유하는 합금 및 알루미늄을 함유하는 합금으로 구성되는 군으로부터 선택된 재료로 형성되는 금속/세라믹 접합 제품.
- 제9항에 있어서, 상기 경납땜 충전재 금속은 은 및 활성 금속을 함유하는 금속/세라믹 접합 제품.
- 제9항에 있어서, 상기 경납땜 충전재 금속은 알루미늄을 포함하는 금속/세라믹 접합 제품.
- 제9항에 있어서, 상기 금속판 및 상기 경납땜 충전재 금속은 니켈 도금, 니켈 합금 도금, 금 도금 및 보전 처리 중 하나 이상에 의해 처리되는 금속/세라믹 접합 제품.
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Cited By (1)
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US12088002B2 (en) | 2020-04-28 | 2024-09-10 | Samsung Electronics Co., Ltd. | Electronic device comprising antenna and housing including non-metallic material |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101362035B1 (ko) * | 2007-05-09 | 2014-02-11 | 엘지디스플레이 주식회사 | 플렉서블 표시 기판의 제조 방법 |
KR101947482B1 (ko) * | 2016-10-05 | 2019-05-10 | 주식회사 아모센스 | 세라믹 기판 및 세라믹 기판 제조 방법 |
KR101947481B1 (ko) * | 2016-06-21 | 2019-05-10 | 주식회사 아모센스 | 세라믹 기판 및 그 제조방법 |
KR20200127512A (ko) * | 2019-05-02 | 2020-11-11 | 주식회사 아모센스 | 세라믹 기판 및 세라믹 기판 제조 방법 |
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2002
- 2002-11-19 KR KR1020020071832A patent/KR100873772B1/ko active IP Right Grant
Patent Citations (6)
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KR940006434B1 (ko) * | 1990-04-12 | 1994-07-20 | 이.아이.듀우판 드 네모아 앤드 캄파니 | 금속화된 부품을 세라믹 기판에 경납땜시키는 방법 |
KR920007021A (ko) * | 1990-09-27 | 1992-04-28 | 김정배 | 전자총용 음극과 그 제조 방법 |
JPH0846326A (ja) * | 1994-07-26 | 1996-02-16 | Dowa Mining Co Ltd | セラミックス配線基板の製造方法 |
JPH10251075A (ja) * | 1997-03-12 | 1998-09-22 | Dowa Mining Co Ltd | 金属−セラミックス複合基板及びその製造法並びにそれに用いるろう材 |
KR19980080073A (ko) * | 1997-03-12 | 1998-11-25 | 하라다 겐조 | 금속-세라믹 복합 기판, 그의 제조 방법 및 그의 방법에 사용하기 위한 납땜용 재료 |
JP2001144234A (ja) * | 1999-11-16 | 2001-05-25 | Mitsubishi Materials Corp | 半導体実装用絶縁回路基板 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US12088002B2 (en) | 2020-04-28 | 2024-09-10 | Samsung Electronics Co., Ltd. | Electronic device comprising antenna and housing including non-metallic material |
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KR20040043530A (ko) | 2004-05-24 |
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