KR100852709B1 - Light emission device and display device provided with the same - Google Patents

Abstract

A light emitting apparatus is provided to prevent electrons from penetrating the base body of a spacer by installing a spacer including a plurality of resistance layers. First and second substrates face each other. An electron emission unit is prepared in the first substrate. A light emission unit is prepared in the second substrate. A spacer(28) supports the first and second substrates to separate the substrates from each other, positioned between the first and second substrates. The spacer includes a base body, a first resistance layer and a third resistance layer wherein the first and second resistance layers are sequentially formed on the base body. The resistance of the first resistance layer is greater than that of the second resistance layer. The first resistance layer can be formed on the lateral surface of both ends of the base body adjacent to the first and second substrates.

Description

LIGHT EMISSION DEVICE AND DISPLAY DEVICE PROVIDED WITH THE SAME

1 is a partially exploded perspective view of a light emitting device according to a first embodiment of the present invention.

FIG. 2 is a perspective view of the spacer shown in FIG. 1. FIG.

3 is a perspective view of a spacer according to a second embodiment of the present invention.

4 is a perspective view of a spacer according to a third embodiment of the present invention.

5 is a cross-sectional view taken along the line VV of FIG. 1.

6 is an exploded perspective view of a display device according to an exemplary embodiment.

<Description of reference numerals for the main parts of the drawings>

1000; Light emitting device 28; Spacer 281; matrix

282; First resistive layer 283; Second resistance layer

The present invention relates to a light emitting device and a display device having the same, and more particularly, to a light emitting device having uniform luminance and a display device having the same.

When all devices capable of recognizing that light is emitted from the outside are light emitting devices, a light emitting device in which a fluorescent layer and an anode electrode are formed on a front substrate, and electron emission parts and driving electrodes are formed on a rear substrate is known. . The light emitting device maintains the space between the front substrate and the rear substrate in a vacuum, and excites the fluorescent layer with electrons emitted from the electron emission unit to emit visible light.

The action of the light emitting device is to apply a driving voltage (scan driving voltage and data driving voltage) to the driving electrodes to control the electron emission amount of the electron emitting parts, and to apply a direct current voltage (anode voltage) of several hundred to several thousand volts to the anode electrode. It is applied to accelerate the electrons emitted from the electron emission portion toward the fluorescent layer.

The light emitting device may be used as a light source for providing light to the display panel in a display device having a passive type display panel such as a liquid crystal display panel.

The light emitting device has low power consumption, is advantageous for large size, and has an advantage of simplifying an optical member as compared with the case of using a cold cathode fluorescent lamp (CCFL) and a light emitting diode (LED).

In the above-described light emitting device, the front substrate and the rear substrate are integrally bonded by the sealing member, and the inside thereof is exhausted to constitute a vacuum container. Spacers are disposed between the front substrate and the rear substrate to maintain a constant gap between the two substrates against the atmospheric pressure applied to the vacuum vessel.

However, in this structure, the electrons emitted from the electron emission part collide with the spacer to charge the spacer. Since the path of the electron beam is distorted by the charged spacers, there is a problem in that a non-emitting region is exposed to excite the fluorescent layer.

Accordingly, an object of the present invention is to provide a light emitting device capable of uniformizing luminance and increasing light emission efficiency and a display device having the same.

A light emitting device according to an embodiment of the present invention includes a first substrate and a second substrate disposed opposite to each other, an electron emission unit provided on the first substrate, a light emitting unit provided on the second substrate, and between the first substrate and the second substrate. Located in the, and comprises a spacer for supporting the first substrate and the second substrate spaced apart. Here, the spacer includes a mother and a first resistance layer and a second resistance layer sequentially formed on the surface of the mother, and the resistance of the first resistance layer is greater than the resistance of the second resistance layer.

The first resistance layer may have a resistance of 10 times to 100 times larger than that of the second resistance layer. For example, the resistance of the first resistance layer may be 1 × ^{10 10} kV / cm to 1 × ^{10 12} kV / cm, and the resistance of the second resistance layer may be 1 × ^{10 9} kV / cm to 1x10 ¹¹ kV / cm.

The first resistance layer may be formed on side surfaces of both ends of the mother substrate adjacent to the first substrate and the second substrate. In addition, the first resistance layer may be bumpy on the surface of the matrix.

The first resistive layer may be made of one selected from TiO ₂ , WGeN, and AlPtN. The second resistive layer may be made of a material having a secondary electron emission coefficient of substantially 1 or less.

On the other hand, the display device according to an embodiment of the present invention includes a light emitting panel adapted to emit light, and a display panel positioned on the light emitting panel and receiving light to display an image. The light emitting panel may be disposed between the first substrate and the second substrate, the electron emission unit provided on the first substrate, the light emitting unit provided on the second substrate, and the first substrate and the second substrate. It includes a spacer for supporting the second substrate spaced apart. The spacer includes a mother and a first resistance layer and a second resistance layer sequentially formed on the surface of the mother, and the resistance of the first resistance layer is greater than the resistance of the second resistance layer.

The resistance of the first resistance layer may be 1 × ^{10 10} kV / cm to 1 × ^{10 12} kV / cm, and the resistance of the second resistance layer may be 1 × ^{10 9} kV / cm to 1x10 ¹¹ kV / cm.

Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. As those skilled in the art can easily understand, the embodiments described below may be modified in various forms without departing from the concept and scope of the present invention. Where possible, the same or similar parts are represented using the same reference numerals in the drawings.

When a portion is referred to as being "above" another portion, it may be just above the other portion or may be accompanied by another portion in between. In contrast, when a part is mentioned as "directly above" another part, no other part is intervened in between.

It is to be understood that the terms first, second and third are used to describe various parts, components, regions, layers and / or sections, but are not limited to these. These terms are only used to distinguish one part, component, region, layer or section from another part, component, region, layer or section. Accordingly, the first portion, component, region, layer or section described below may be referred to as the second portion, component, region, layer or section without departing from the scope of the invention.

The terminology used herein is for reference only to specific embodiments and is not intended to limit the invention. As used herein, the singular forms “a,” “an,” and “the” include plural forms as well, unless the phrases clearly indicate the opposite. As used herein, the term "comprising" embodies a particular characteristic, region, integer, step, operation, element, and / or component, and other specific characteristics, region, integer, step, operation, element, component, and / or group. It does not exclude the presence or addition of.

Terms indicating relative spaces such as "below" and "above" may be used to more easily describe the relationship between different parts of one part shown in the drawings. These terms are intended to include other meanings or operations of the device in use with the meanings intended in the figures. For example, when the device in the figure is reversed, any parts described as being "below" of other parts are described as being "above" other parts. Thus, the exemplary term "below" encompasses both up and down directions. The device can be rotated 90 degrees or at other angles, the terms representing relative space being interpreted accordingly.

Unless defined otherwise, all terms including technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art. Commonly defined terms used are additionally interpreted as having a meaning consistent with the related technical literature and the presently disclosed contents, and are not interpreted as ideal or very formal meaning unless defined.

In the embodiment of the present invention, the light emitting device includes all devices capable of recognizing that light is emitted when viewed from the outside. Accordingly, the devices of all displays that display symbols, letters, numbers, images, and the like to transmit information are also included in the light emitting device. In addition, the light emitting device may use light as a light emitting panel in the light receiving display panel.

1 is a schematic exploded view of a light emitting device 1000 according to a first embodiment of the present invention.

Referring to FIG. 1, the light emitting device 1000 includes a first substrate 10 and a second substrate 12 that are disposed to be parallel to each other at predetermined intervals. The 1st board | substrate 10 and the 2nd board | substrate 12 are joined by the sealing member (not shown) arrange | positioned at the edge, and comprise the vacuum container which has an internal space. The vessel is evacuated to a vacuum of approximately 10 ⁻⁶ Torr to constitute a vacuum vessel consisting of the first substrate 10, the second substrate 12, and the sealing member.

The first substrate 10 facing the second substrate 12 is provided with an electron emission unit 100 in which an array of electron emitting elements is arrayed, and the second substrate 12 facing the first substrate 10. The light emitting unit 110 including the fluorescent layer 24 and the anode electrode 22 is provided. The first substrate 10 provided with the electron emission unit 100 and the second substrate 12 provided with the light emitting unit 110 are combined to form the light emitting device 1000.

The above-described light emitting device is characterized in that the electron emission unit has a field emission array (FEA) type, a surface conduction emission (SCE) type, a metal-insulating layer-metal (MIM) type, and a metal-insulating layer-semiconductor (MIS) type. It is possible to include the configuration of the following, the embodiment of the present invention will be specifically described by taking a field emission array (FEA) type light emitting device as an example.

First, cathode electrodes 14 are formed on the first substrate 10 in a stripe pattern along the y-axis direction on the first substrate 10. The first insulating layer 16 is formed on the first substrate 10 while covering the cathode electrodes 14, and the gate electrodes 18 are orthogonal to the cathode electrodes 14 on the first insulating layer 16. Is formed in a stripe pattern along the x-axis direction.

As a result, an intersection region of the cathode electrode 14 and the gate electrode 18 is formed, and this intersection region can constitute one pixel region D of the light emitting panel. Electron emitters 20 are formed for each unit pixel above the cathode electrodes 14.

The electron emission unit 20 arranged in the above structure is made of materials emitting electrons when a electric field is applied in a vacuum, such as a carbon-based material or a nanometer (nm) size material. That is, the electron emission unit 20 is made of carbon nanotubes, graphite, graphite nanofibers, diamonds, diamond-like carbon, fullerene (C ₆₀ ), silicon nanowires and combinations thereof.

On the other hand, the electron emission portion may be formed of a tip structure having a pointed tip mainly made of molybdenum (Mo) or silicon (Si).

As shown in the enlarged source of FIG. 1, the first insulating layer 16 and the gate electrodes 18 respectively have a first opening 161 and a second opening 181 corresponding to the electron emission section 20. Is formed to expose the electron emission unit 20 on the first substrate 10. That is, the electron emission part 20 is formed on the cathode electrode 14 and is exposed to the outside through the first opening 161 and the second opening 181. Although the electron emission unit 20 is illustrated in the form of a cylinder in the present embodiment, the shape thereof is not necessarily limited to the illustrated example.

Next, an anode electrode 22, a fluorescent layer 24, and a reflective film 26 are formed on one surface of the second substrate 12 opposite to the first substrate 10.

The anode electrode 22 receives the high voltage required for electron beam acceleration from the outside, for example, a voltage of 10 kV to 20 kV to maintain the fluorescent layer 24 in a high potential state. The anode electrode 22 is formed of a transparent conductive film such as indium tin oxide (ITO). On the contrary, the fluorescent layer and the anode electrode may be stacked at different positions. When the fluorescent layer and the anode electrode are sequentially stacked on the second substrate 12, the fluorescent layer is adjacent to the second substrate. As a result, since the anode does not interfere with light emitted from the fluorescent layer, the anode can be formed of an opaque metal having good electrical conductivity.

The fluorescent layer 24 may be formed of a white fluorescent layer. The fluorescent layer 24 may be formed in the entire effective area of the second substrate 12 or may be formed in a predetermined pattern so that one white fluorescent layer is positioned in each unit pixel area.

On the other hand, the fluorescent layer may be composed of a combination of red, green and blue fluorescent layers, these fluorescent layers may be divided into a predetermined pattern in one pixel area. In FIG. 1, the white fluorescent layer 24 is positioned over the entire effective region of the second substrate 12.

The reflective film 26 made of a metal such as aluminum (Al) is formed on the fluorescent layer 24. For example, the reflective film 26 may be formed to a thin thickness of several thousand ohms strong, and may form fine holes for passing electron beams. The reflective film 26 reflects the visible light emitted toward the first substrate 10 of the visible light emitted from the fluorescent layer 24 toward the second substrate 12 to improve the luminance of the light emitting surface.

In addition, a spacer 28 is disposed between the first substrate 10 and the second substrate 12 to maintain a constant gap between the first and second substrates 10 and 12 against the atmospheric pressure applied to the vacuum container. do. The spacer 28 is mainly made of a dielectric such as ceramic so that the driving electrodes 14 and 18 of the first substrate 10 and the driving electrode 22 of the second substrate 12 are not shorted through the spacer 28. do.

FIG. 2 shows a perspective view of the spacer 28 shown in FIG. 1.

Referring to FIG. 2, the spacer 28 includes a matrix 281, a first resistive layer 282, and a second resistive layer 283.

The mother body 281 has, for example, a partition wall shape and constitutes a body of the spacer 28. Matrix 28 may be made of a material such as glass or ceramic.

The first resistive layer 282 and the second resistive layer 283 are sequentially formed on the side surface of the parent 281 exposed to the vacuum in the vacuum container. These resistive layers 282, 283 discharge the charge charged in the spacer 28 by secondary electron emission. Therefore, the resistive layers 282 and 283 have a resistance lower than that of the parent 281 so as to lower the overall resistance of the spacer 28.

The second resistance layer 283 is formed on the side of the matrix 281 and emits secondary electrons from the spacer 28. The second resistance layer 283 may include a material that is excellent in electrical conductivity and thermally stable, such as metals such as gold (Au), platinum (Pt), and aluminum (Al). In addition, the second resistance layer 283 may be formed of a nitride including the metal described above, for example, AlPtN.

These materials emit a substantially equal number of secondary electrons from the surface of the spacer 28 when the electrons strike the surface of the spacer 28 because the secondary electron emission coefficient is substantially close to one. Thereby, charging of the spacer 28 can be suppressed.

Meanwhile, the first resistive layer 282 is formed between the matrix 281 and the second resistive layer 283. The first resistive layer 282 has a larger resistance than the second resistive layer 283 to prevent the electrons from penetrating into the mother 281 when electrons collide with the surface of the second resistive layer 283. For example, the resistance of the first resistive layer 282 is 10 to 100 times larger than the resistance of the second resistive layer 283. The resistance of the first resistance layer 282 may be 1 × ^{10 11} kV / cm to 1 × ^{10 12} kV / cm, and the resistance of the second resistance layer 283 may be ¹ × ^{10 9} kV / cm to 1x10 ¹⁰ kV / cm.

In addition, the first resistance layer 282 prevents the second resistive layer 283 from being removed. When the second resistance layer 283 is formed on the side surface of the base 281 which is an insulating material, a part of the second resistance layer 283 is formed in the process of disposing the spacer 28 on the substrates 10 and 12. 281). When electrons collide with a portion where the second resistance layer 283 is separated, the spacer 28 may be easily charged.

In the present embodiment, the first resistive layer 282 is formed by selecting a material having good adhesion to the matrix 281 and the second resistive layer 283, thereby removing the second resistive layer 283 from the matrix 281. It can prevent. The first resistive layer 282 may include TiO ₂ , WGeN, AlPtN, or the like.

The thickness of the first resistance layer 282 may be 500 kPa to 3000 kPa, and the thickness of the second resistance layer 283 may be 200 kPa to 5000 kPa. When the first resistive layer 282 is thicker than the second resistive layer 283, the effect of preventing the electrons collided on the surface of the second resistive layer 283 from penetrating into the mother 281 is large. On the contrary, when the first resistive layer 282 is thinner than the second resistive layer 283, the effect of preventing film removal of the second resistive layer 283 from the mother body 281 is large.

3 shows a perspective view of a spacer 28 'according to a second embodiment of the present invention. Since the spacer 28 ′ of FIG. 3 is similar in structure to the spacer 28 of FIG. 2, the same reference numerals are used for the same parts, and a detailed description thereof will be omitted.

As shown in FIG. 3, the first resistive layer 282 ′ has an uneven structure with a rugged surface. That is, the first resistance layer 282 ′ is formed on the side surface of the matrix 281, and irregularities are formed with a thickness difference of about 1000 μm or less from the side surface of the matrix 281.

This uneven structure provides the effect of reducing the secondary electron emission coefficient by increasing the surface roughness of the first resistive layer 282.

The electron beams exposed inside the vacuum vessel impinge on the spacer surface at a predetermined angle of incidence. Due to this collision, secondary electrons are emitted from the spacer. As described above, the formation of the concave-convex structure on the surface may interfere with the movement of the secondary electrons emitted from the spacer with a predetermined emission angle relative to the smooth surface. Therefore, the secondary electron emission coefficient may be reduced as compared to the spacer having a smooth surface.

Therefore, since the spacer 28 ′ increases the surface roughness of the first resistive layer 282 to lower the secondary electron emission coefficient, the spacer 28 ′ may be more advantageous in preventing charging of the spacer 28 ′.

Figure 4 shows a perspective view of a spacer 28 "according to the third embodiment of the present invention. The spacer 28" of Figure 4 is similar in structure to the spacer 28 of Figure 2, and therefore the same drawing in the same part. Symbols are used and their detailed description is omitted.

As shown in FIG. 4, the first resistive layer 282 ″ is formed at both ends of the matrix 281 based on the z-axis. That is, the first substrate 10 and the second substrate 12 are respectively formed. The first resistance layer 28 "is formed on the side of the mother body 281 that is in contact.

In general, electrons that are poorly focused among the electrons directed from the first substrate 10 to the second substrate 12 collide with both ends of the spacer 28 ″. Also, from the second substrate 12 Back-scattered electrons also impinge on the ends of the spacers 28 ″ adjacent the second substrate 12. These electrons have a smaller angle of incidence than electrons impinging on the center of the spacer 28 "with respect to the z-axis, that is, they collide almost perpendicularly to the surface of the spacer 28" and thus can penetrate deeper. Therefore, even if the second resistance layer 283 is formed on the surface of the matrix 281, electrons colliding with both ends of the spacer 28 ″ may penetrate to the matrix 281 to charge the spacer 28 ″.

In this embodiment, the first resistance layer 282 ″ is formed at both ends of the matrix 281 to more effectively prevent electrons from penetrating into the matrix 281.

In the above-described embodiments, only the mother body formed in the form of a partition wall has been described, but the shape of the mother body is not limited thereto, and may be variously modified, such as a circular columnar shape or a square columnar shape.

5 is a schematic cross-sectional view taken along the line VV of FIG. 1.

Referring to FIG. 5, the above-described light emitting device 1000 forms a plurality of unit pixels by combining the cathode electrodes 14 and the gate electrodes 18, and a predetermined voltage is applied from the outside to the cathode electrodes 14. The gate electrodes 18 and the anode electrodes 22 are supplied and driven. For example, any one of the cathode electrodes 14 and the gate electrodes 18 receives a scan driving voltage to serve as scan electrodes, and the other electrodes receive a data driving voltage to serve as data electrodes.

The anode electrode 22 receives a voltage required for electron beam acceleration, for example, a positive DC voltage of 10 kV to 20 kV.

Then, an electric field is formed around the electron emission unit 20 in the unit pixels in which the voltage difference between the cathode electrode 14 and the gate electrode 18 is greater than or equal to the threshold value. As a result, the electron emission unit 20 is formed as shown by a dotted line in FIG. 5. Electrons (e-) are emitted from. The emitted electrons (e−) are attracted to the high voltage applied to the anode electrode 22 and collide with the corresponding fluorescent layer 24 to emit the fluorescent layer 24.

The above-described spacers 28 may smoothly discharge current by smoothly discharging electric charges charged in the spacers 28. In addition, the secondary electron emission coefficient of the spacer 28 can be reduced to minimize the charging of the spacer. As a result, drag and collision of the electron beam with respect to the charged spacer can be reduced, thereby effectively preventing the electron beam path from being distorted.

6 is a schematic exploded view of a display device 2000 including a light emitting device 1000 according to an exemplary embodiment.

Referring to FIG. 6, the display device 2000 includes a light emitting device 1000 and a display panel 200. The display device 2000 further includes a first fixing member 302 and a second fixing member 304 to fix and support the display panel 200 and the light emitting device 1000. A diffusion plate 400 is disposed between the display panel 200 and the light emitting device 1000 to diffuse light emitted from the light emitting device 1000 to supply the light to the display panel 200. The diffusion plate 400 and the light emitting device 1000 are spaced apart from each other by a predetermined distance.

The display panel 200 includes a liquid crystal display panel or another light receiving display panel. Hereinafter, the case where a display panel is a liquid crystal display panel as an example is demonstrated.

The display panel 200 includes a TFT substrate 210 including a plurality of thin film transistors (TFTs), a color filter substrate 220 positioned on the TFT substrate 210, and an injection between the panels. And a liquid crystal layer (not shown). Polarizers (not shown) are attached to the upper portion of the color filter substrate 220 and the lower portion of the TFT substrate 210 to polarize light passing through the display panel 200.

The TFT substrate 210 is a transparent glass substrate on which a matrix thin film transistor is formed. A data line is connected to a source terminal and a gate line is connected to a gate terminal. In the drain terminal, a pixel electrode made of a transparent conductive film as a conductive material is formed.

When electrical signals are input from the printed circuit boards 230 and 240 to the gate line and the data line, respectively, electrical signals are input to the gate terminal and the source terminal of the TFT. According to the input of these electrical signals, the TFT is turned on or turned off, and the electrical signals necessary for pixel formation are output to the drain terminal.

The color filter substrate 220 is a panel in which RGB pixels, which are color pixels in which a predetermined color is expressed while light passes, are formed by a thin film process, and a common electrode made of a transparent conductive film is coated on the entire surface thereof.

When power is applied to the gate terminal and the source terminal of the TFT and the thin film transistor is turned on, an electric field is formed between the pixel electrode and the common electrode of the color filter substrate 220. The array angle of the liquid crystal injected between the TFT substrate 210 and the color filter substrate 220 is changed by the electric field, and the light transmittance is changed for each pixel according to the changed array angle.

The printed circuit boards 230 and 240 of the display panel 200 are connected to gate lines and data lines through respective driving IC packages 2301 and 2401. In order to drive the display panel 200, the gate printed circuit board 230 transmits a gate driving signal, and the data printed circuit board 240 transmits a data driving signal.

The light emitting device 1000 is a light source that supplies light to the display panel 200, and may be driven for each light emitting pixel as indicated by a dotted line. A plurality of gate lines (not shown) and a plurality of data lines (not shown) are formed in the light emitting device 1000, and they are connected to a printed circuit board (not shown) through the driving integrated circuit packages 102 and 104. The printed circuit board is positioned on the rear surface of the light emitting device 1000. The printed circuit board operates the light emitting device 1000 by applying driving signals to the gate line and the data line of the light emitting device 1000.

The light emitting device 1000 forms fewer pixels than the display panel 200 so that one pixel of the light emitting device 1000 corresponds to two or more pixels of the display panel 200. Each pixel of the light emitting device 1000 may emit light corresponding to the highest gray level among the pixels of the display panel 200 corresponding thereto, and the light emitting device 1000 may express a gray level of 2 to 8 bits for each pixel. have.

For convenience, a pixel of the display panel 200 is called a first pixel, a pixel of the light emitting device 1000 is called a second pixel, and a plurality of first pixels corresponding to one second pixel is called a first pixel group. .

A driving process of the light emitting device 1000 will be described below. In the light emitting device 1000, a signal controller (not shown) controlling the display panel 200 detects the highest gray level among the first pixels of the first pixel group. The grayscale required to emit light of the second pixel is calculated according to the detected grayscale, and is converted into digital data. And generating driving signals of the light emitting panel using the digital data.

The driving signal of the light emitting device 1000 includes a scan driving signal and a data driving signal. The second pixel of the light emitting apparatus 1000 emits light with a predetermined gray level in synchronization with the first pixel group when an image is displayed in the corresponding first pixel group. As described above, the light emitting apparatus 1000 independently controls the light emission intensity of each pixel to provide light of an appropriate intensity to the pixels of the display panel 200 corresponding to each pixel.

The above-described light emitting device 1000 is driven at a lower power than the light emitting diode (LED) and the cold cathode fluorescent lamp (CCFL), and can independently control the light emission intensity of each pixel. Therefore, the contrast of the screen implemented in the display panel can be increased, and a clearer picture quality can be realized.

Although the preferred embodiments of the present invention have been described above, the present invention is not limited thereto, and various modifications and changes can be made within the scope of the claims and the detailed description of the invention and the accompanying drawings. Naturally, it belongs to the range of.

In the light emitting device according to the embodiment of the present invention, a spacer having a plurality of resistive layers is provided to prevent electrons from penetrating into the mother matrix of the spacer, and the electric current flows more smoothly to efficiently discharge the charge charged in the spacer. You can.

Therefore, since the fluorescent layer emits light uniformly, the luminance of the light emitting surface can be improved. In addition, the display quality of the display device using this light emitting device as a light source can be improved.

Claims (11)

A first substrate and a second substrate disposed to face each other; An electron emission unit provided on the first substrate; A light emitting unit provided on the second substrate; And A spacer disposed between the first substrate and the second substrate and spaced apart from each other to support the first substrate and the second substrate Including, The spacer matrix; And First and second resistance layers sequentially formed on the surface of the mother body Including, The light emitting device of which the resistance of the first resistive layer is larger than the resistance of the second resistive layer. The method of claim 1, The first light emitting device has a resistance of 10 times to 100 times greater than the second resistance layer. The method of claim 1, The light emitting device of which the resistance of the first resistive layer is 1 × ^{10 10} mW / cm to 1 × ^{10 12} mW / cm. The method of claim 1, The light emitting device of which the resistance of the second resistive layer is 1 × ^{10 9} kV / cm to 1x10 ¹¹ kV / cm. The method of claim 1, The light emitting device of claim 1, wherein the first resistance layer is formed at both ends of the mother body adjacent to the first substrate and the second substrate, respectively. The method of claim 1, The light emitting device of which the first resistance layer has a concave-convex structure on the side of the matrix. The method of claim 1, The light emitting device of which the first resistive layer is made of one selected from TiO ₂ , WGeN, and AlPtN. The method of claim 1, The second resistance layer is made of a material having a secondary electron emission coefficient of 1 or less. A light emitting panel adapted to emit light; And A display panel positioned on the light emitting panel and configured to display an image by receiving the light; Including, The light emitting panel, A first substrate and a second substrate disposed to face each other; An electron emission unit provided on the first substrate; A light emitting unit provided on the second substrate; And A spacer disposed between the first substrate and the second substrate and spaced apart from each other to support the first substrate and the second substrate Including, The spacer matrix; And First and second resistance layers sequentially formed on the surface of the mother body Including, The display device of claim 1, wherein the resistance of the first resistance layer is greater than the resistance of the second resistance layer. The method of claim 9, The display device of claim 1, wherein the resistance of the first resistive layer is in the range of 1 × ^{10 10} μs / cm to 1 × ^{10 12} μs / cm. The method of claim 9, The display device of claim ^1, wherein the resistance of the second resistance layer is in the range of 1 × ^{10 9} kV / cm to 1 × ^{10 11} kV / cm.

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