KR100833056B1 - 연료전지용 강화-복합 전해질막 - Google Patents
연료전지용 강화-복합 전해질막 Download PDFInfo
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- KR100833056B1 KR100833056B1 KR1020060029839A KR20060029839A KR100833056B1 KR 100833056 B1 KR100833056 B1 KR 100833056B1 KR 1020060029839 A KR1020060029839 A KR 1020060029839A KR 20060029839 A KR20060029839 A KR 20060029839A KR 100833056 B1 KR100833056 B1 KR 100833056B1
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Abstract
Description
구분 | 이온교환능력도 (meq./g) | 겉보기 물성 | 인장강도 (Mpa) | 연신율 (%) |
실시예 1 | 1.38 | 투명, 우수 | 76 | 17 |
비교예 1 | 1.41 | 투명, 우수 | 70 | 14 |
Nafion 112 | 0.91 | 투명, 우수 | 43 | 225 |
구분 | 실시예 1 | 비교예 1 | Nafion 112 |
메탄올투과도 (10-6 * cm2/sec) | 1.05 | 1.8 | 2.4 |
구분 | 실시예 1 가로 * 세로 | 비교예 1 가로 * 세로 | Nafion 112 가로 * 세로 |
수화 전 | 4.0 * 4.0 | 4.0 * 4.0 | 4.0 * 4.0 |
수화 후 | 4.4 * 4.4 | 6.2 * 6.2 | 4.6 * 4.6 |
Claims (20)
- 기판 위에 비불소계 또는 부분불소계 술폰화 제1 고분자 전해질 용액을 도포하여 제1 고분자 전해질층을 형성하는 제1단계;상기 제1 고분자 전해질층 위에 비불소계 또는 부분불소계 미세 다공성 고분자 기재를 올리고 기공 내에 비불소계 또는 부분불소계 술폰화 제2 고분자 전해질 용액을 함침시키는 제2단계; 및상기 제2 고분자 전해질이 함침된 미세 다공성 고분자 기재 위에 비불소계 또는 부분불소계 술폰화 제3 고분자 전해질 용액을 도포하여 제3 고분자 전해질층을 형성하는 제3단계를 포함하여, 미세 다공성 고분자 기재와 술폰화 고분자 전해질을 구비한 복합 전해질막을 제조하는 방법.
- 제1항에 있어서, 제1단계, 제2단계, 제3단계 중 하나 이상에서 고분자 전해질 용액을 적용하고 난 후, 용매를 제거하는 것이 특징인 제조 방법.
- 제2항에 있어서, 상기 용매 제거 방법은 50 내지 150 도에서 건조하는 것이 특징인 제조 방법.
- 제1항에 있어서, 제1단계에서 사용된 제1 고분자 전해질층 형성용 기판을 제 거하는 단계를 포함하는 것이 특징인 제조 방법.
- 제1항에 있어서, 제2 고분자 전해질 용액은 계면활성제를 함유하고, 제1 고분자 전해질 용액 및 제3 고분자 전해질 용액은 계면활성제를 함유하지 아니한 것이 특징인 제조 방법.
- 제5항에 있어서, 제2단계에서 제2 고분자 전해질 용액을 함침시킨 후 계면활성제를 제거하는 것이 특징인 제조 방법.
- 제1항에 있어서, 제1, 제2, 제3 고분자 전해질 용액의 농도는 각각 독립적으로 1 wt% 내지 40 wt%인 것이 특징인 제조 방법.
- 제1항에 있어서, 제2단계는 제2 고분자 전해질 용액을 사용한 용액붓기 방법에 의해 제2 고분자 전해질 용액을 미세 다공성 고분자 기재에 함침시키는 것이 특징인 제조 방법.
- 제1항에 있어서, 제1 고분자 전해질층 및 제3 고분자 전해질층의 두께를 동일하게 형성시킴으로써, 미세 다공성 고분자 기재가 복합 전해질막 내 두께방향으로 정중간에 위치한 복합 전해질막을 제공하는 것이 특징인 제조 방법.
- 미세 다공성 고분자 기재와 술폰화 고분자 전해질을 구비하는 복합 전해질막에 있어서,비불소계 또는 부분불소계 술폰화 제1 고분자 전해질로 형성된 제1 고분자 전해질층;상기 제1 고분자 전해질층 위에 올려진, 비불소계 또는 부분불소계 미세 다공성 고분자 기재로서, 기공 내에 비불소계 또는 부분불소계 술폰화 제2 고분자 전해질이 함침되어 있으면서, 상기 제1 고분자 전해질과 제2 고분자 전해질이 계면 상에서 서로 엉켜 있는 미세 다공성 고분자 기재; 및상기 제2 고분자 전해질이 함침된 미세 다공성 고분자 기재 위에 비불소계 또는 부분불소계 술폰화 제3 고분자 전해질에 의해 형성된 제3 고분자 전해질층으로서, 상기 제2 고분자 전해질과 제3 고분자 전해질이 계면 상에서 서로 엉켜 있는 제3 고분자 전해질층을 포함하는 것이 특징인 복합 전해질막.
- 제10항에 있어서, 제1항 내지 제9항 중 어느 한 항에 기재된 제조 방법에 의해 제공되는 것이 특징인 복합 전해질막.
- 제10항에 있어서, 미세 다공성 고분자 기재의 재료는 폴리비닐다이플로로에틸렌(polyvinyldifluoroethylene), 폴리에틸렌(polyethylene), 폴리프로필렌(polypropylene), 폴리에틸렌테레프탈레이트(polyethyleneterephthalate), 폴리이미드(polyimide), 및 폴리아미드 (polyamide)로 구성된 군에서 1종 이상 선택된 것이 특징인 복합 전해질막.
- 제10항에 있어서, 미세 다공성 고분자 기재는 3㎛ 내지 1,000 ㎛의 두께, 20 % 내지 95 % 의 공극율, 0.05 ㎛ 내지 20 ㎛의 기공 크기를 갖는 것이 특징인 복합 전해질막.
- 제10항에 있어서, 제1, 제2, 제3 술폰화 고분자 전해질은 각각 독립적으로 술폰화 폴리아릴렌에테르계[Sulfonated Poly(arylene ether)s], 술폰화 폴리이미드계[Sulfonated Poly(imide)s], 술폰화 폴리아미드계[Sulfonated Poly(amide)s], 술폰화 폴리포스파젠계[Sulfonated Polyphosphazene], 술폰화 폴리스타이렌계[Sulfonated Polystyrene], 술폰화 radiation-grafted FEP-g-polystyrene, 술폰화 radiation-grafted ETFE-g-polystyrene, 술폰화 radiation-grafted LDPE-g-polystyrene, 술폰화 radiation-grafted PVDF-g-polystyrene로 구성된 군에서 선택된 1종 이상의 술폰화 탄화수소계 고분자를 포함하는 단일 공중합체(Homo copolymer), 교대 공중합체(Alternating copolymer), 불규칙 공중합체(Random copolymer), 블록 공중합체 (Block copolymer), 멀티블록 공중합체(Multiblock copolymer), 그라프트 공중합체(Grafting copolymer)인 것이 특징인 복합 전해질막.
- 제10항에 있어서, 제1 고분자 전해질층 및 제3 고분자 전해질층은 각각 독립 적으로 두께가 1㎛ 내지 50㎛인 것이 특징인 복합 전해질막.
- 제10항에 있어서, 두께가 10㎛ 내지 100㎛인 것이 특징인 복합 전해질막.
- 제10항에 있어서, 제2 고분자 전해질 층을 형성하기 위해서는 계면활성제를 사용하고, 제1 고분자 전해질 층 및 제3 고분자 전해질 층은 계면활성제를 사용하지 아니한 것이 특징인 복합 전해질막.
- 제10항에 있어서, 미세 다공성 고분자 기재는 제2 고분자 전해질 용액을 사용한 용액붓기 방법에 의해 제2 고분자 전해질을 미세 다공성 고분자 기재에 함침시킨 것이 특징인 복합 전해질막.
- 제10항, 제12항 내지 제18항 중 어느 한 항에 기재된 복합 전해질막을 구비한 막-전극 접합체(MEA).
- 제19항의 막-전극 접합체를 포함하는 연료전지.
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US11/729,931 US9054357B2 (en) | 2006-03-31 | 2007-03-30 | Reinforced composite electrolyte membrane for fuel cell |
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US9893374B2 (en) | 2018-02-13 |
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US20070231653A1 (en) | 2007-10-04 |
US20150214563A1 (en) | 2015-07-30 |
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