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KR100824761B1 - 나노와이어 전극을 갖는 상 변화 메모리 셀 - Google Patents

나노와이어 전극을 갖는 상 변화 메모리 셀 Download PDF

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Publication number
KR100824761B1
KR100824761B1 KR1020060066531A KR20060066531A KR100824761B1 KR 100824761 B1 KR100824761 B1 KR 100824761B1 KR 1020060066531 A KR1020060066531 A KR 1020060066531A KR 20060066531 A KR20060066531 A KR 20060066531A KR 100824761 B1 KR100824761 B1 KR 100824761B1
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South Korea
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material layer
insulating material
electrode
phase
layer
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KR1020060066531A
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English (en)
Korean (ko)
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KR20070009482A (ko
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마르틴 구트쉬
프란츠 크로이플
하랄드 자이들
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키몬다 아게
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/066—Shaping switching materials by filling of openings, e.g. damascene method
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8418—Electrodes adapted for focusing electric field or current, e.g. tip-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Semiconductor Memories (AREA)
KR1020060066531A 2005-07-14 2006-07-14 나노와이어 전극을 갖는 상 변화 메모리 셀 KR100824761B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/182,022 US7420199B2 (en) 2005-07-14 2005-07-14 Resistivity changing memory cell having nanowire electrode
US11/182,022 2005-07-14

Publications (2)

Publication Number Publication Date
KR20070009482A KR20070009482A (ko) 2007-01-18
KR100824761B1 true KR100824761B1 (ko) 2008-04-24

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Family Applications (1)

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KR1020060066531A KR100824761B1 (ko) 2005-07-14 2006-07-14 나노와이어 전극을 갖는 상 변화 메모리 셀

Country Status (4)

Country Link
US (1) US7420199B2 (fr)
EP (1) EP1744323B1 (fr)
KR (1) KR100824761B1 (fr)
DE (1) DE602006011395D1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100969205B1 (ko) * 2008-03-12 2010-07-09 한양대학교 산학협력단 나노선 형성방법과 나노선이 형성되어 있는 적층구조물 및이를 이용한 수직형 반도체 소자와 인터커넥트 적층구조물제조방법과 수직형 반도체 소자와 인터커넥트 적층구조물
KR100996172B1 (ko) 2008-07-24 2010-11-24 주식회사 하이닉스반도체 저항성 메모리 소자 및 그 제조 방법

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8525143B2 (en) * 2005-09-06 2013-09-03 Nantero Inc. Method and system of using nanotube fabrics as joule heating elements for memories and other applications
US7906803B2 (en) * 2005-12-06 2011-03-15 Canon Kabushiki Kaisha Nano-wire capacitor and circuit device therewith
KR100674144B1 (ko) * 2006-01-05 2007-01-29 한국과학기술원 탄소 나노 튜브를 이용한 상변화 메모리 및 이의 제조 방법
US7560337B2 (en) * 2006-01-09 2009-07-14 Macronix International Co., Ltd. Programmable resistive RAM and manufacturing method
US20070183189A1 (en) * 2006-02-08 2007-08-09 Thomas Nirschl Memory having nanotube transistor access device
KR100713936B1 (ko) * 2006-04-14 2007-05-07 주식회사 하이닉스반도체 상변환 기억 소자 및 그의 제조방법
US20070292985A1 (en) * 2006-06-16 2007-12-20 Yuegang Zhang Phase change memory with nanofiber heater
US8766224B2 (en) * 2006-10-03 2014-07-01 Hewlett-Packard Development Company, L.P. Electrically actuated switch
US8188569B2 (en) * 2006-12-15 2012-05-29 Qimonda Ag Phase change random access memory device with transistor, and method for fabricating a memory device
US7859036B2 (en) 2007-04-05 2010-12-28 Micron Technology, Inc. Memory devices having electrodes comprising nanowires, systems including same and methods of forming same
US20080315430A1 (en) * 2007-06-22 2008-12-25 Qimonda Ag Nanowire vias
TW200903724A (en) * 2007-07-09 2009-01-16 Ind Tech Res Inst Phase change memory device and method of fabricating the same
US7868426B2 (en) * 2007-07-26 2011-01-11 University Of Delaware Method of fabricating monolithic nanoscale probes
US7811851B2 (en) * 2007-09-28 2010-10-12 Freescale Semiconductor, Inc. Phase change memory structures
US7719039B2 (en) * 2007-09-28 2010-05-18 Freescale Semiconductor, Inc. Phase change memory structures including pillars
US9048414B2 (en) * 2008-01-22 2015-06-02 The United States of America, as represented by the Secretary of Commerce, The National Institute of Standards and Technology Nonvolatile memory device and processing method
US7858506B2 (en) * 2008-06-18 2010-12-28 Micron Technology, Inc. Diodes, and methods of forming diodes
US8119528B2 (en) * 2008-08-19 2012-02-21 International Business Machines Corporation Nanoscale electrodes for phase change memory devices
KR20100032572A (ko) * 2008-09-18 2010-03-26 주식회사 하이닉스반도체 저항성 메모리 소자 및 그 제조 방법
US8063394B2 (en) * 2008-10-08 2011-11-22 Qimonda Ag Integrated circuit
KR20100049824A (ko) * 2008-11-04 2010-05-13 삼성전자주식회사 저항 메모리 장치 및 그 제조 방법.
WO2010082922A1 (fr) * 2009-01-13 2010-07-22 Hewlett-Packard Development Company, L.P. Memristance dotée d'une électrode de forme triangulaire
US8193522B2 (en) * 2009-04-09 2012-06-05 Qualcomm Incorporated Diamond type quad-resistor cells of PRAM
US8207593B2 (en) * 2009-07-28 2012-06-26 Hewlett-Packard Development Company, L.P. Memristor having a nanostructure in the switching material
US8759810B2 (en) * 2009-09-25 2014-06-24 The Trustees Of The University Of Pennsylvania Phase change memory devices with relaxed stress
US8213224B2 (en) 2009-11-23 2012-07-03 International Business Machines Corporation High density low power nanowire phase change material memory device
CN101789439B (zh) * 2010-02-11 2013-02-27 复旦大学 一种可用在柔性电路中的阻变存储器及其制备方法
US9454997B2 (en) 2010-12-02 2016-09-27 Micron Technology, Inc. Array of nonvolatile memory cells having at least five memory cells per unit cell, having a plurality of the unit cells which individually comprise three elevational regions of programmable material, and/or having a continuous volume having a combination of a plurality of vertically oriented memory cells and a plurality of horizontally oriented memory cells; array of vertically stacked tiers of nonvolatile memory cells
CN102623631A (zh) * 2011-01-27 2012-08-01 中国科学院微电子研究所 阻变型随机存储单元、存储器及制备方法
CN102738386A (zh) * 2011-03-31 2012-10-17 中国科学院微电子研究所 阻变存储器及其制造方法
FR2973936B1 (fr) * 2011-04-05 2014-01-31 Commissariat Energie Atomique Procede de croissance selective sur une structure semiconductrice
CN103094471A (zh) * 2011-10-28 2013-05-08 中国科学院物理研究所 一种缩小存储节点的非易失性存储装置及其制造方法
US9412442B2 (en) * 2012-04-27 2016-08-09 The Board Of Trustees Of The University Of Illinois Methods for forming a nanowire and apparatus thereof
US8558209B1 (en) * 2012-05-04 2013-10-15 Micron Technology, Inc. Memory cells having-multi-portion data storage region
US9627611B2 (en) 2012-11-21 2017-04-18 Micron Technology, Inc. Methods for forming narrow vertical pillars and integrated circuit devices having the same
US9136473B2 (en) * 2013-03-28 2015-09-15 Stmicroelectronics, Inc. Semiconductor device with PCM memory cells and nanotubes and related methods
US9306165B2 (en) 2014-03-27 2016-04-05 Micron Technology, Inc. Replacement materials processes for forming cross point memory
US9601689B2 (en) * 2014-09-11 2017-03-21 Kabushiki Kaisha Toshiba Memory device
WO2016039694A1 (fr) * 2014-09-12 2016-03-17 Agency For Science, Technology And Research Cellule de mémoire et leur procédé de formation
US10937961B2 (en) * 2018-11-06 2021-03-02 International Business Machines Corporation Structure and method to form bi-layer composite phase-change-memory cell
US11043634B2 (en) * 2019-04-09 2021-06-22 International Business Machines Corporation Confining filament at pillar center for memory devices
US11271151B2 (en) 2019-06-12 2022-03-08 International Business Machines Corporation Phase change memory using multiple phase change layers and multiple heat conductors
US10985164B1 (en) * 2019-09-27 2021-04-20 Nanya Technology Corporation Semiconductor device with nanowire contact and method for fabricating the same
US11800817B2 (en) 2021-06-21 2023-10-24 International Business Machines Corporation Phase change memory cell galvanic corrosion prevention
US11957069B2 (en) 2021-10-22 2024-04-09 International Business Machines Corporation Contact resistance of a metal liner in a phase change memory cell

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040085902A (ko) * 2003-04-02 2004-10-08 삼성전자주식회사 상변화 기억 소자 및 그 형성 방법
KR20040106824A (ko) * 2003-06-11 2004-12-18 삼성전자주식회사 상변화 기억 소자 및 그 형성 방법
US20050139816A1 (en) 2003-12-30 2005-06-30 Won-Cheol Jeong Memory devices having sharp-tipped phase change layer patterns and methods of forming the same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6928042B2 (en) 2001-07-06 2005-08-09 Hewlett-Packard Development Company, L.P. Data storage device including nanotube electron sources
US6787450B2 (en) 2002-05-29 2004-09-07 Micron Technology, Inc. High aspect ratio fill method and resulting structure
US6605535B1 (en) 2002-09-26 2003-08-12 Promos Technologies, Inc Method of filling trenches using vapor-liquid-solid mechanism
KR100982419B1 (ko) 2003-05-01 2010-09-15 삼성전자주식회사 탄소나노튜브를 이용한 반도체 소자의 배선 형성 방법 및이 방법에 의해 제조된 반도체 소자
EP1766678A1 (fr) 2004-06-30 2007-03-28 Koninklijke Philips Electronics N.V. Procede de fabrication d'un dispositif electrique pourvu d'une couche de matiere conductrice se trouvant en contact electrique avec des nanofils
US7208372B2 (en) * 2005-01-19 2007-04-24 Sharp Laboratories Of America, Inc. Non-volatile memory resistor cell with nanotip electrode
US20060237799A1 (en) * 2005-04-21 2006-10-26 Lsi Logic Corporation Carbon nanotube memory cells having flat bottom electrode contact surface

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040085902A (ko) * 2003-04-02 2004-10-08 삼성전자주식회사 상변화 기억 소자 및 그 형성 방법
KR20040106824A (ko) * 2003-06-11 2004-12-18 삼성전자주식회사 상변화 기억 소자 및 그 형성 방법
US20050139816A1 (en) 2003-12-30 2005-06-30 Won-Cheol Jeong Memory devices having sharp-tipped phase change layer patterns and methods of forming the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100969205B1 (ko) * 2008-03-12 2010-07-09 한양대학교 산학협력단 나노선 형성방법과 나노선이 형성되어 있는 적층구조물 및이를 이용한 수직형 반도체 소자와 인터커넥트 적층구조물제조방법과 수직형 반도체 소자와 인터커넥트 적층구조물
KR100996172B1 (ko) 2008-07-24 2010-11-24 주식회사 하이닉스반도체 저항성 메모리 소자 및 그 제조 방법
US7911030B2 (en) 2008-07-24 2011-03-22 Hynix Semiconductor Inc. Resistive memory device and method of fabricating the same

Also Published As

Publication number Publication date
EP1744323B1 (fr) 2009-12-30
KR20070009482A (ko) 2007-01-18
DE602006011395D1 (de) 2010-02-11
US20070012956A1 (en) 2007-01-18
US7420199B2 (en) 2008-09-02
EP1744323A1 (fr) 2007-01-17

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