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KR100770653B1 - Depositing apparatus forming thin film - Google Patents

Depositing apparatus forming thin film Download PDF

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Publication number
KR100770653B1
KR100770653B1 KR1020060047241A KR20060047241A KR100770653B1 KR 100770653 B1 KR100770653 B1 KR 100770653B1 KR 1020060047241 A KR1020060047241 A KR 1020060047241A KR 20060047241 A KR20060047241 A KR 20060047241A KR 100770653 B1 KR100770653 B1 KR 100770653B1
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South Korea
Prior art keywords
deposition material
opening
transfer pipe
deposition
thin film
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KR1020060047241A
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Korean (ko)
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배경빈
윤주섭
김창우
권현구
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에이엔 에스 주식회사
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Priority to KR1020060047241A priority Critical patent/KR100770653B1/en
Priority to JP2007138101A priority patent/JP2007314881A/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/548—Controlling the composition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

A depositing apparatus for forming a thin film is provided to maximize efficiency for using a deposition material by shielding the deposition material when unnecessary. A depositing apparatus for forming a thin film includes an evaporating source(20), a transporting pipe(30), a spaying unit(80), opening units(40,50) and a bypass line(60). The evaporating source evaporates a deposition material by heating the deposition material made of metal or organic matter. The transporting pipe transfers an evaporated deposition material to the spraying unit. The spraying unit includes a plurality of spraying nozzles. The spraying nozzles spray the evaporated deposition material to a substrate(S). The opening unit opens and closes the transporting pipe for controlling supply of the evaporated deposition material to the spraying unit. The bypass line is diverged from the transporting pipe and guides the evaporated deposition material when the transporting pipe is closed.

Description

박막형성용 증착장치{Depositing apparatus forming thin film}Depositioning apparatus forming thin film

도 1은 종래 박막형성용 증착장치의 구조를 나타낸 것이다. 1 shows the structure of a conventional thin film deposition apparatus.

도 2는 본 발명에 의한 증착장치의 구조를 나타낸 것이다. Figure 2 shows the structure of a deposition apparatus according to the present invention.

도 3a 및 도 3b는 도 2에 도시된 증착장치의 요부 사용상태도이다. 3A and 3B are diagrams illustrating main use states of the vapor deposition apparatus shown in FIG. 2.

**도면의 주요부분에 대한 부호의 설명**** Description of the symbols for the main parts of the drawings **

1: 증착장치 10: 질량 유량 제어기1: deposition apparatus 10: mass flow controller

20: 증발원 30: 이송관20: evaporation source 30: transfer pipe

40, 50: 밸브 41: 밸로우즈 40, 50: valve 41: bellows

42: 금속구 60: 바이패스 라인42: metal ball 60: bypass line

70: 저장탱크 80: 분사헤드70: storage tank 80: injection head

90: 셔터 90: shutter

본 발명은 박막형성용 증착장치에 관한 것으로서, 보다 상세하게는 증착재료의 공급이 불필요할 경우에는 이를 차단함으로써 증착재료의 사용효율을 극대화할 수 있는 박막형성용 증착장치에 관한 것이다. The present invention relates to a deposition apparatus for forming a thin film, and more particularly, to a deposition apparatus for forming a thin film that can maximize the use efficiency of the deposition material by blocking the supply of the deposition material when it is unnecessary.

최근 정보 통신 기술의 비약적인 발전과 시장의 팽창에 따라 디스플레이 소자로 평판표시소자(Flat Panel Display)가 각광받고 있다. 이러한 평판표시소자로는 액정 표시소자(Liquid Crystal Display), 플라즈마 디스플레이 소자(Plasma Display Panel), 유기 발광 소자(Organic Light Emitting Diodes) 등이 대표적이다. Recently, with the rapid development of information and communication technology and the expansion of the market, flat panel displays have been in the spotlight as display devices. Such flat panel displays include liquid crystal displays, plasma display panels, organic light emitting diodes, and the like.

그 중에서 유기발광소자는 빠른 응답속도, 기존의 액정표시소자보다 낮은 소비 전력, 경량성, 별도의 백라이트(back light) 장치가 필요 없어서 초 박형으로 만들 수 있는 점, 고휘도 등의 매우 좋은 장점을 가지고 있어서 차세대 디스플레이 소자로서 각광받고 있다. Among them, the organic light emitting device has very good advantages such as fast response speed, lower power consumption than conventional liquid crystal display, light weight, ultra thin without needing a back light device, and high brightness. As a result, it is attracting attention as a next generation display device.

이러한 유기발광소자는 기판 위에 양극 막, 유기 박막, 음극 막을 순서대로 입히고, 양극과 음극 사이에 전압을 걸어줌으로써 적당한 에너지의 차이가 유기 박막에 형성되어 스스로 발광하는 원리이다. 즉, 주입되는 전자와 정공(hole)이 재결합하며 남는 여기 에너지가 빛으로 발생하는 것이다. 이때 유기 물질의 도판트의 양에 따라 발생하는 빛의 파장을 조절할 수 있으므로 풀 칼라(full color)의 구현이 가능하다. In the organic light emitting device, an anode film, an organic thin film, and a cathode film are sequentially coated on a substrate, and a suitable energy difference is formed in the organic film by emitting a voltage between the anode and the cathode, thereby emitting light by itself. That is, the excitation energy left by recombination of injected electrons and holes is generated as light. In this case, since the wavelength of light generated according to the amount of the dopant of the organic material may be adjusted, full color may be realized.

유기발광소자의 자세한 구조는 도면에는 도시하지 않았지만 기판상에 양극(anode), 정공 주입층(hole injection layer), 정공 운송층(hole transfer layer), 발광층(emitting layer), 전자 운송층(eletron transfer layer), 전자 주입층(eletron injection layer), 음극(cathode)이 순서대로 적층되어 형성된다. 여기에서 양극으로는 면저항이 작고 투과성이 좋은 ITO(Indium Tin Oxide)이 주로 사용된다. 그리고 유기 박막은 발광 효율을 높이기 위하여 정공 주입층, 정공 운송층, 발광층, 전자 운송층, 전자 주입층의 다층으로 구성되며, 발광층으로 사용되는 유기물질은 Alq3, TPD, PBD, m-MTDATA, TCTA 등이다. 또한, 음극으로는 LiF-Al 금속막이 사용된다. 그리고 유기 박막이 공기 중의 수분과 산소에 매우 약하므로 소자의 수명(life time)을 증가시키기 위한 캡이 봉지된다. Although the detailed structure of the organic light emitting diode is not shown in the drawing, an anode, a hole injection layer, a hole transport layer, an emission layer, and an electron transport layer are deposited on a substrate. A layer, an electron injection layer, and a cathode are stacked in this order. In this case, ITO (Indium Tin Oxide) having a small sheet resistance and good permeability is mainly used as the anode. And an organic thin film is composed of a hole injection layer, a hole transport layer, light emitting layer, an electron transport layer, the electron injection layer, the multi-layer to increase the light emitting efficiency, an organic material used for the light emitting layer is Alq 3, TPD, PBD, m-MTDATA, TCTA. In addition, a LiF-Al metal film is used as the cathode. And since the organic thin film is very weak against moisture and oxygen in the air, a cap for increasing the life time of the device is sealed.

따라서 유기발광소자를 제조하기 위하여는 다양한 증착막을 형성하여야 하는데, 이러한 증착막 형성을 위한 종래의 방법으로는 포인트 증착, 라인증착, 유기기상증착(OVPD), 및 스캐닝프로세스(DSP) 등이 있다. Therefore, in order to fabricate an organic light emitting device, various deposition films should be formed. Conventional methods for forming such deposition films include point deposition, line deposition, organic vapor deposition (OVPD), and scanning process (DSP).

도 1을 참조하여 종래의 DSP방식에 의한 증착장치의 구성을 설명하면, 증착재료를 가열하여 증발시키는 증발원(120)과, 상기 증발원(120)으로부터 증발된 증착재료를 이송하는 이송관(120)과, 상기 이송관(130)을 통해 공급된 기상의 증발재료를 기판(S)을 향해 분사하는 다수개의 노즐이 구비된 분사수단(140)를 포함하여 이루어진다. Referring to FIG. 1, a configuration of a deposition apparatus according to a conventional DSP method includes an evaporation source 120 for heating and evaporating a deposition material, and a transfer pipe 120 for transporting evaporation material evaporated from the evaporation source 120. And, and the injection means 140 is provided with a plurality of nozzles for injecting the vaporized evaporation material supplied through the transfer pipe 130 toward the substrate (S).

위와 같이 구성된 종래의 증착장치(100)는 진공챔버내에 기판(S)을 로딩하고, 로딩된 기판과 마스크(M)를 얼라인하여 정위치에 밀착시킨 후, 증발원(120)을 가열하여 증착재료를 기판(S)을 향해 분사함으로써 박막을 형성한다. The conventional deposition apparatus 100 configured as described above loads the substrate S in the vacuum chamber, aligns the loaded substrate and the mask M in place, and heats the evaporation source 120 to deposit the deposition material. A thin film is formed by spraying toward the substrate S. FIG.

한편, 기판의 로딩시 또는 기판과 마스크의 정렬시 등에는 증착재료가 분사되어서는 아니된다. 종래에는 회동가능한 셔터(150)를 이용하고 있다. 즉, 공정 준비시에는 기판(S)과 분사수단(140) 사이에 셔터(150)를 개재시켜 기판에 증착재료가 증착되는 것을 방지하고, 공정시에는 상기 셔터(150)를 회동시켜 증착하는 것이다. On the other hand, the deposition material should not be sprayed when the substrate is loaded or when the substrate and the mask are aligned. Conventionally, the rotatable shutter 150 is used. That is, during the preparation of the process, the deposition material is prevented from being deposited on the substrate through the shutter 150 between the substrate S and the injection means 140, and during the process, the deposition of the shutter 150 is rotated. .

그러나 유기발광소자의 제조에 이용되는 유기물 등의 증착재료는 대부분 매우 고가이다. 따라서 셔터에 의한 방식은 분사되는 증착재료를 차단하여 기판에 증착되는 것을 방지할 뿐, 이를 재활용할 수 없기 때문에 증착재료의 낭비가 심하다는 문제점이 있다. However, most of the deposition materials such as organic materials used in the manufacture of the organic light emitting device is very expensive. Therefore, the shutter method prevents deposition on the substrate by blocking the deposition material to be sprayed, and there is a problem that waste of the deposition material is severe because it cannot be recycled.

본 발명은 상술한 문제점을 해결하기 위하여 안출된 것으로서, 본 발명의 목적은 증착재료의 공급이 불필요할 경우에는 이를 차단함으로써 증착재료의 사용효율을 극대화할 수 있는 박막형성용 증착장치를 제공함에 있다. The present invention has been made to solve the above-described problems, an object of the present invention is to provide a deposition apparatus for forming a thin film that can maximize the use efficiency of the deposition material by blocking it when the supply of the deposition material is unnecessary.

위와 같은 기술적 과제를 해결하기 위하여 본 발명에 의한 박막형성용 증착장치는 증착재료를 가열하여 증발시키는 증발원; 상기 증발원으로부터 공급된 기상의 증착재료를 이송하는 이송관; 상기 이송관을 개폐하는 개폐수단; 및 상기 이송관에 연결되어 상기 증착재료를 기판을 향해 분사하는 분사수단;을 포함하여 이루 어진다. In order to solve the above technical problem, a thin film forming deposition apparatus according to the present invention is an evaporation source for heating and evaporating the deposition material; A transfer tube for transferring vapor deposition material supplied from the evaporation source; Opening and closing means for opening and closing the transfer pipe; And injection means connected to the transfer pipe for injecting the deposition material toward the substrate.

상기 개폐수단은 다양한 형태로 제작될 수 있으며, 특히, 공압에 의해 신축가능한 밸로우즈; 및 상기 밸로우즈의 신축에 의해 상기 이송관을 개폐하는 금속구;를 포함하여 이루어지는 것이 바람직하다. The opening and closing means may be manufactured in various forms, in particular, the bellows stretchable by pneumatic; And a metal ball for opening and closing the transfer pipe by expansion and contraction of the bellows.

또한 상기 이송관으로부터 분기되어 상기 개폐수단에 의해 상기 이송관의 폐쇄시 증착재료를 유도하는 바이패스라인과, 상기 바이패스라인에 의해 유도되는 상기 증착재료를 저장하는 저장탱크가 더 구비되는 것이 더욱 바람직하다. In addition, a bypass line branched from the transfer pipe to guide deposition material upon closing of the transfer pipe by the opening and closing means, and a storage tank for storing the deposition material guided by the bypass line are further provided. desirable.

또한 상기 개폐수단을 가열하는 히터가 더 구비되는 것이 바람직하다. In addition, the heater for heating the opening and closing means is preferably further provided.

마지막으로 상기 분사수단과 기판 사이에는 회동가능한 셔터가 더 구비될 수 있다. Finally, a rotatable shutter may be further provided between the jetting means and the substrate.

이하, 첨부된 도면을 참조하여 본 발명의 구성 및 작용을 구체적으로 설명한다. Hereinafter, with reference to the accompanying drawings will be described in detail the configuration and operation of the present invention.

도 2를 참조하면, 본 발명에 의한 증착장치(1)는 증발원(20), 이송관(30), 분사수단(80), 개폐수단(40, 50) 및 바이패스라인(60)을 포함하여 이루어진다. Referring to FIG. 2, the deposition apparatus 1 according to the present invention includes an evaporation source 20, a transfer pipe 30, injection means 80, opening and closing means 40, 50, and a bypass line 60. Is done.

상기 증발원(20)은 내부에 금속 또는 유기물 등의 증착재료를 수용하고 가열함으로써, 증착재료를 증발시키는 요소이다. The evaporation source 20 is an element that evaporates the deposition material by receiving and heating a deposition material such as metal or organic material therein.

상기 이송관(30)은 상기 증발원(20)에서 증발된 기상의 증착재료를 후술하는 분사수단(80)로 유입시키는 요소이다. The transfer pipe 30 is an element for introducing the vapor deposition material evaporated from the evaporation source 20 into the injection means 80 described later.

상기 분사수단(80)은 상기 이송관(30)으로부터 유입된 상기 기상의 증착재료 를 기판(S)을 향해 분사하는 복수개의 분사노즐을 포함하여 구성된다. 상기 기판(S)은 메탈마스크(M)와 얼라인되어 정위치에 밀착되어 있다. 또한, 상기 분사수단(80)과 기판(S) 사이에는 셔터(90)가 구비된다. 상기 셔터(90)는 회동이 가능하도록 구성되어, 공정 준비시에는 기판(S)과 분사헤드(80) 사이에 셔터(90)를 개재시켜 기판(S)에 증착재료가 증착되는 것을 방지하고, 공정시에는 상기 셔터(90)를 회동시켜 개방함으로써 증착하는 것이다. 또한 도시하지는 아니하였으나, 상기 분사헤드(80)의 온도제어를 위한 열전대가 더 구비된다. The injection means 80 is configured to include a plurality of injection nozzles for injecting the vapor deposition material introduced from the transfer pipe 30 toward the substrate (S). The substrate S is aligned with the metal mask M and is in close contact with the metal mask M. In addition, the shutter 90 is provided between the injection means 80 and the substrate (S). The shutter 90 is configured to be rotatable, and during the preparation of the process, the deposition material is prevented from being deposited on the substrate S by interposing the shutter 90 between the substrate S and the spray head 80. In the process, vapor deposition is performed by rotating and opening the shutter 90. In addition, although not shown, a thermocouple for temperature control of the injection head 80 is further provided.

또한 상기 증착원(20)의 승압속도를 제어하기 위하여 질량 유량 제어기(Mass Flow Controller, MFC)(10)가 구비되는데, 이 때 희석가스(dilution gas)가 사용된다. 즉, 상기 희석가스는 질량 유량 제어기(10)에 의해 공급량이 제어되면서 공급라인을 통해 주입된다. In addition, a mass flow controller (MFC) 10 is provided to control the boosting speed of the deposition source 20, in which a dilution gas is used. That is, the dilution gas is injected through the supply line while the supply amount is controlled by the mass flow controller 10.

특히, 본 발명에 의한 증착장치(1)는 이송관(30)을 개폐하는 개폐수단(40)이 더 구비되어 있다. 이를 통해 상기 이송관(30)을 개폐함으로써 증발원(20)으로부터 증발된 상기 증착재료를 분사수단(80)으로의 공급을 제어할 수 있는 것이다. In particular, the deposition apparatus 1 according to the present invention is further provided with opening and closing means 40 for opening and closing the transfer pipe (30). Through this, it is possible to control the supply of the deposition material evaporated from the evaporation source 20 to the injection means 80 by opening and closing the transfer pipe 30.

한편, 상기 개폐수단(40)에 의해 상기 이송관(30)이 폐쇄될 시 상기 증착재료를 유도하는 바이패스라인(60)이 상기 이송관(30)으로부터 분기되어 형성된다. On the other hand, when the transfer pipe 30 is closed by the opening and closing means 40, a bypass line 60 for inducing the deposition material is formed branched from the transfer pipe 30.

또한 상기 바이패스라인(60)상에도 개폐수단(50)이 더 부가되어 있음을 알 수 있다. In addition, it can be seen that the opening and closing means 50 is further added on the bypass line 60.

또한 상기 바이패스라인(60)을 통해 유도되는 증착재료를 저장하여 재활용하도록 저장탱크(70)가 더 구비되어 있다. In addition, the storage tank 70 is further provided to store and recycle the deposition material guided through the bypass line 60.

도 3a를 참조하여 본 발명에 의한 개폐수단(40)의 구성을 구체적으로 설명한다. 도시된 바와 같이, 상기 개폐수단(40)은 공압에 의해 신축이 가능한 밸로우즈(41)와, 상기 밸로우즈(41)에 연결되어 상기 이송관(30)을 개폐하는 금속구(42)를 포함하여 이루어진다. 물론 상기 금속구(42)는 고온에서도 내열성을 갖는 재질로 형성된다. Referring to Figure 3a will be described in detail the configuration of the opening and closing means 40 according to the present invention. As shown, the opening and closing means 40 includes a bellows 41 that can be expanded and contracted by pneumatic pressure, and a metal ball 42 connected to the bellows 41 to open and close the transfer pipe 30. It is done by Of course, the metal sphere 42 is formed of a material having heat resistance even at high temperatures.

도 3a와 도 3b를 참조하여 상기 개폐수단(40)의 작용을 설명한다. 먼저 도 3a의 상태는 증발원으로부터 증발된 기상의 증착재료는 이송관(30)을 통해 분사수단으로 공급된다. 3A and 3B, the operation of the opening and closing means 40 will be described. First, in the state of FIG. 3A, the vapor deposition material evaporated from the evaporation source is supplied to the injection means through the transfer pipe 30.

다음으로, 기판의 로딩이나 마스크와의 얼라인 등 증착이 수행되지 않는 동안에는 도 3b와 같이 상기 밸로우즈(41)에 패쇄용 공압을 가하여 밸로우즈(41)를 신장시키고, 그 결과 이에 연결된 금속구(42)가 상기 이송관(30)을 패쇄시키는 것이다. 이 상태에서는 도시되지는 아니하였으나, 분사수단으로 공급되는 것이 차단된 증발된 증착재료는 바이패스라인으로 유도되어 저장탱크에 저장된다. Next, while deposition is not performed, such as loading of a substrate or aligning with a mask, a closing pneumatic pressure is applied to the bellows 41 to extend the bellows 41 as shown in FIG. 42 blocks the transfer pipe 30. Although not shown in this state, the evaporated deposition material which is blocked from being supplied to the injection means is led to the bypass line and stored in the storage tank.

반대로, 증착공정을 수행하기 위하여는 상기 밸로우즈(41)에 개방용 공압을 가하여 밸로우즈(41)를 압축시키고, 그 결과 다시 도 3a와 같이 금속구(42)가 상기 이송관(30)을 개방시키는 것이다. 이 때는 상기 바이패스라인이 패쇄된다. On the contrary, in order to perform the deposition process, the bellows 41 is compressed by applying an open air pressure to the bellows 41, and as a result, the metal sphere 42 again moves the transfer pipe 30 as shown in FIG. It is to open. At this time, the bypass line is closed.

이하에서는 본 발명에 의한 증착장치의 작용을 설명한다. 먼저 진공챔버(미도시)의 내부에 기판(S)을 로딩하고, 마스크(M)를 얼라인하여 정위치에 밀착시킨다. 이와 같이 공정의 준비중에는 상기 개폐수단(40)을 이용하여 이송관(30)을 패쇄함으로써 증착재료가 분사수단(80)으로 공급되는 것을 차단한다. Hereinafter, the operation of the deposition apparatus according to the present invention will be described. First, the substrate S is loaded into the vacuum chamber (not shown), and the mask M is aligned to be in close contact. As such, during the preparation of the process, the transfer pipe 30 is blocked by using the opening and closing means 40 to block the deposition material from being supplied to the injection means 80.

위의 준비단계가 완료되면, 셔터(90)를 회동하여 개방하고, 상기 개폐수단(40)을 이용하여 상기 이송관(30)을 개방함으로써 증착재료를 분사수단(80)으로 공급하고, 분사수단(80)은 기판(S)을 향해 증착재료를 분사하여 증착하는 것이다. When the above preparation step is completed, by rotating the shutter 90 to open, by using the opening and closing means 40 to open the transfer pipe 30 to supply the deposition material to the injection means 80, the injection means Reference numeral 80 designates a deposition material by spraying the deposition material toward the substrate S.

마찬가지로, 증착공정이 완료 또는 새로운 증착공정을 수행하기 위하여 준비하는 단계에서는 다시금 이송관(30)을 패쇄하는 것이다. Likewise, in the step of preparing the deposition process to complete or to perform a new deposition process, the transfer pipe 30 is again closed.

본 발명에 따르면 공정의 진행에 따라 증착재료의 공급을 제어할 수 있는 효과가 있다. According to the present invention has an effect that can control the supply of the deposition material in accordance with the progress of the process.

따라서, 증착재료의 공급이 불필요할 경우에는 이를 차단함으로써 증착재료의 사용효율을 극대화할 수 있는 것이다. Therefore, when the supply of the deposition material is unnecessary, it is possible to maximize the use efficiency of the deposition material by blocking it.

Claims (6)

증착재료를 가열하여 증발시키는 증발원;An evaporation source for heating and evaporating the deposition material; 상기 증발원으로부터 공급된 기상의 증착재료를 이송하는 이송관;A transfer tube for transferring vapor deposition material supplied from the evaporation source; 상기 이송관을 개폐하는 개폐수단; 및 Opening and closing means for opening and closing the transfer pipe; And 상기 이송관에 연결되어 상기 증착재료를 기판을 향해 분사하는 분사수단;을 포함하여 이루어지는 것을 특징으로 하는 박막형성용 증착장치. And deposition means connected to the transfer pipe for injecting the deposition material toward the substrate. 제 1 항에 있어서,The method of claim 1, 상기 개폐수단은, The opening and closing means, 공압에 의해 신축가능한 밸로우즈; 및 Pneumatically expandable bellows; And 상기 밸로우즈의 신축에 의해 상기 이송관을 개폐하는 금속구;를 포함하여 이루어지는 것을 특징으로 하는 박막형성용 증착장치. And a metal sphere for opening and closing the transfer pipe by the expansion and contraction of the bellows. 제 1 항에 있어서,The method of claim 1, 상기 이송관으로부터 분기되어 상기 개폐수단에 의해 상기 이송관의 폐쇄시 증착재료를 유도하는 바이패스라인이 더 구비되는 것을 특징으로 하는 박막형성용 증착장치. And a bypass line branched from the transfer pipe to guide deposition material upon closing of the transfer pipe by the opening and closing means. 제 3 항에 있어서,The method of claim 3, wherein 상기 바이패스라인에 의해 유도되는 상기 증착재료를 저장하는 저장탱크가 더 구비되는 것을 특징으로 하는 박막형성용 증착장치. And a storage tank for storing the deposition material guided by the bypass line. 제 2 항에 있어서,The method of claim 2, 상기 개폐수단을 가열하는 히터가 더 구비되는 것을 특징으로 하는 박막형성용 증착장치. Deposition apparatus for forming a thin film, characterized in that it further comprises a heater for heating the opening and closing means. 제 1 항에 있어서,The method of claim 1, 상기 분사수단과 기판 사이에는 회동가능한 셔터가 더 구비되는 것을 특징으로 하는 박막형성용 증착장치. And a rotatable shutter is further provided between the jetting means and the substrate.
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