KR100723383B1 - Field emission type backlight unit - Google Patents

Abstract

A field emission type backlight unit is disclosed. The disclosed field emission backlight unit includes an upper substrate and a lower substrate spaced apart from each other; An anode electrode formed on the lower surface of the upper substrate; A phosphor layer formed on the bottom surface of the anode electrode; A plurality of cathode electrodes and gate electrodes alternately formed on the upper surface of the lower substrate; And an emitter formed on the cathode electrode, wherein the gate electrode is formed to have a thickness greater than that of the first gate electrode on the first gate electrode and the first gate electrode made of a conductive material formed on the upper surface of the lower substrate. It includes a second gate electrode.

Description

Field emission type backlight unit

1 is a cross-sectional view schematically showing a conventional field emission backlight unit.

FIG. 2 is a perspective view illustrating a lower substrate on which a cathode electrode and a gate electrode are formed in the field emission type backlight unit of FIG. 1.

3 is a schematic cross-sectional view of a field emission backlight unit according to an exemplary embodiment of the present invention.

4 is a perspective view illustrating a lower substrate on which a cathode electrode and a gate electrode are formed in the field emission type backlight unit of FIG. 3.

5 is a schematic cross-sectional view of a field emission backlight unit according to another exemplary embodiment of the present invention.

6 is a schematic cross-sectional view of a field emission backlight unit according to another exemplary embodiment of the present invention.

<Explanation of symbols for the main parts of the drawings>

110,210,310 ... lower substrate 112,212,312 ... cathode electrode

115,215,315 ... gate electrodes 115a, 215a ... first gate electrode

115b, 215b ... Second gate electrode 117,217,317 ... emitter

120,220,320 ... Upper substrate 122,222,322 ... Anode electrode

124,224,324 ... phosphor layer

The present invention relates to a field emission type backlight unit, and more particularly, to a field emission type backlight unit that can improve luminous efficiency.

In general, a flat panel display may be largely classified into a light emitting display device and a light receiving display device. The light emitting display device includes a cathode ray tube (CRT), a plasma display panel (PDP), and a field emission display (FED). There is a liquid crystal display (LCD). The liquid crystal display has the advantages of light weight and low power consumption. However, since the LCD itself does not emit light to form an image, and the light is incident on the outside, the liquid crystal display device forms an image. There is no problem. In order to solve this problem, a backlight unit is provided on the back of the liquid crystal display.

Conventionally, a cold cathode fluorescent lamp (CCFL) as a light source and a light emitting diode (LED) as a point light source have been mainly used as a backlight unit. However, such a backlight unit generally has a disadvantage in that its construction is complicated and high in manufacturing cost, and the light source has a large power consumption due to reflection and transmission of light at the side. In particular, as the liquid crystal display becomes larger, it is difficult to secure uniformity of luminance.

Accordingly, in recent years, a field emission type backlight unit having a planar light emitting structure has been developed to solve the above problems. The field emission type backlight unit consumes less power than a conventional backlight unit using a cold cathode fluorescent lamp, and has a relatively uniform luminance even in a wide range of light emitting regions. On the other hand, the field emission backlight unit as described above may be used as an illumination.

1 is a cross-sectional view schematically showing a conventional field emission backlight unit. 2 is a perspective view illustrating a lower substrate on which a cathode electrode and a gate electrode are formed.

1 and 2, the upper substrate 20 and the lower substrate 10 are disposed to face each other at a predetermined interval. An anode electrode 22 is formed on the bottom surface of the upper substrate 20, and a phosphor layer 24 is formed on the bottom surface of the anode electrode 22. On the upper surface of the lower substrate 10, a plurality of cathode electrodes 12 and a plurality of gate electrodes 15 arranged in parallel with each other are formed. Here, the cathode electrodes 12 and the gate electrodes 15 are alternately formed on the same plane. The cathode electrodes 12 and the gate electrodes 15 are formed of a thin film having a thickness of about 1000 mW to 3000 mW. At both edges of the cathode electrodes 12, a plurality of emitters 17 made of electron-emitting materials such as carbon nanotubes (CNT) are provided. Although not shown in the drawings, a plurality of spacers are provided between the upper substrate 20 and the lower substrate 10 to maintain a constant distance between the upper substrate 20 and the lower substrate 10. It is prepared. In the above structure, as voltage is applied between the cathode electrode 12 and the gate electrode 15, electrons are emitted from the emitter 17 provided on the cathode electrode 12, and the electrons thus emitted are anode electrodes. Accelerated by the voltage applied to the (22) to excite the phosphor layer 24 to emit visible light.

However, in the above-described conventional field emission type backlight unit, since the cathode electrodes 12 and the gate electrodes 15 are formed in a thin film on the same plane, emitters 17 formed on the cathode electrodes 12 The electric field formed around) is greatly influenced not only by the voltage applied to the gate electrode 15 but also by the voltage applied to the anode electrode 22. Therefore, when a high voltage is applied to the anode electrode 22 in order to achieve the maximum efficiency of the phosphor layer 24, the electric field formed around the emitters 17 is the voltage of the voltage applied to the anode electrode 22. Affected, excess electrons are emitted from emitters 17. As a result, the current flowing through the anode electrode 22 is increased, which becomes a factor of lowering the luminous efficiency of the backlight unit.

The present invention has been made to solve the above problems, an object of the present invention is to provide a field emission type backlight unit that can improve the luminous efficiency by improving the structure of the electrodes formed on the lower substrate.

In order to achieve the above object,

The field emission type backlight unit according to the embodiment of the present invention,

An upper substrate and a lower substrate spaced apart from each other;

An anode formed on the bottom surface of the upper substrate;

A phosphor layer formed on the bottom surface of the anode electrode;

A plurality of cathode electrodes and gate electrodes alternately formed on the upper surface of the lower substrate; And

An emitter formed on the cathode electrode;

The gate electrode includes a first gate electrode made of a conductive material formed on an upper surface of the lower substrate, and a second gate electrode formed thicker than the first gate electrode on an upper surface of the first gate electrode.

Here, the first gate electrode may be formed of a thin film having a thickness of 1000 Å to 3000 Å, and the second gate electrode may be formed of a thick film having a thickness of 0.3 μm to 50 μm.

The second gate electrode may be made of a conductive material. In this case, it is preferable that the second gate electrode is made of a conductive paste made of acicular particles. The first and second gate electrodes may be integrally formed.

The second gate electrode may be made of a non-conductive material. In this case, the second gate electrode is preferably made of a non-conductive paste made of acicular particles.

The emitter is preferably formed at both edges of the cathode electrode, the emitter may be made of carbon nanotubes (CNT).

Preferably, a plurality of spacers are provided between the upper substrate and the lower substrate to maintain a constant gap between the upper substrate and the lower substrate.

Field emission type backlight unit according to another embodiment of the present invention,

An upper substrate and a lower substrate spaced apart from each other;

An anode formed on the bottom surface of the upper substrate;

A phosphor layer formed on the bottom surface of the anode electrode;

A plurality of cathode electrodes and gate electrodes alternately formed on the upper surface of the lower substrate; And

An emitter formed on the cathode electrode;

The gate electrode includes a first gate electrode made of a conductive material formed on an upper surface of the lower substrate, and a second gate electrode formed on the upper surface of the first gate electrode to have a thickness greater than that of the first gate electrode. The electrode includes a first cathode electrode made of a conductive material formed on an upper surface of the lower substrate, and a second cathode electrode formed on the upper surface of the first cathode electrode to a thickness thicker than that of the first cathode electrode.

Field emission type backlight unit according to another embodiment of the present invention,

An upper substrate and a lower substrate spaced apart from each other;

An anode formed on the bottom surface of the upper substrate;

A phosphor layer formed on the bottom surface of the anode electrode;

A plurality of cathode electrodes and gate electrodes alternately formed on the upper surface of the lower substrate; And

An emitter formed on the cathode electrode;

The cathode electrode includes a first cathode electrode made of a conductive material formed on an upper surface of the lower substrate, and a second cathode electrode formed on the upper surface of the first cathode electrode to a thickness thicker than that of the first cathode electrode.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. Like reference numerals in the drawings denote like elements.

3 is a schematic cross-sectional view of a field emission backlight unit according to an exemplary embodiment of the present invention. 4 is a perspective view illustrating a lower substrate on which a cathode electrode and a gate electrode are formed.

3 and 4, the upper substrate 120 and the lower substrate 110 are disposed to face each other at predetermined intervals. Glass substrates are generally used as the upper substrate 120 and the lower substrate 110. An anode electrode 122 is formed on a bottom surface of the upper substrate 120, and a phosphor layer 124 is formed on a bottom surface of the anode electrode 122. The anode electrode 122 is preferably made of a transparent conductive material, for example, indium tin oxide (ITO), so that visible light emitted from the phosphor layer 124 can pass therethrough. The anode electrode 122 may be formed as a thin film on the entire lower surface of the upper substrate 120, or may be formed in a predetermined pattern, for example, a stripe pattern on the lower surface of the upper substrate 120. The phosphor layer 124 may be formed by coating red (R), green (G), and blue (B) phosphors on a lower surface of the anode electrode 122 in a predetermined pattern, or red (R). It may be formed by coating the entire lower surface of the upper substrate 120 in a state where the fluorescent material of green (G) and blue (B) is mixed.

On the upper surface of the lower substrate 110, a plurality of cathode electrodes 112 and gate electrodes 115 are alternately formed. In this case, the cathode electrodes 112 and the gate electrodes 115 may be formed in a predetermined pattern, for example, a stripe pattern. The cathode electrode 112 is formed on the upper surface of the lower substrate 110 as a thin film having a thickness of approximately 1000 Å to 3000 Å. The cathode electrode 112 is made of, for example, silver (Ag) or the like and a conductive material.

The gate electrode 115 is formed to have a thickness greater than that of the first gate electrode 115a formed on the upper surface of the first gate electrode 115a and the first gate electrode 115a formed on the lower substrate 110. It consists of two gate electrodes 115b. Specifically, the first gate electrode 115a is formed of a thin film having a thickness of about 1000 μm to 3000 μm, and the second gate electrode 115b is formed of a thick film of about 0.3 μm to 50 μm. The first gate electrode 115a may be formed by depositing a conductive material such as silver (Ag) on the upper surface of the lower substrate 110. The second gate electrode 115b may be made of a conductive material or a non-conductive material. The second gate electrode 115b is formed in a relatively thick thick film having a thickness of about 0.3 μm to 50 μm, and is formed around the emitter 117 by a voltage applied between the cathode electrode 112 and the gate electrode 115. This is to prevent the electric field from being affected by the voltage applied to the anode electrode 122. The second gate electrode 115b may be formed of a conductive paste such as silver paste or a non-conductive paste, for example. Here, the conductive paste or non-conductive paste is preferably composed of acicular particles so as to have a high aspect ratio even after a baking process. The second gate electrode 115b is coated with a conductive paste or non-conductive paste on the top surface of the first gate electrode 115a by a screen printing method, a spin coating method or a slurry method. It can be formed by. On the other hand, when both the first and second gate electrodes 115a and 115b are made of a conductive material, the first and second gate electrodes 115a and 115b may be integrally formed.

Emitters 117 are formed at both edges of the cathode electrode 112 to emit electrons by a voltage applied between the cathode electrode 112 and the gate electrode 115. The emitter 117 is made of an electron-emitting material such as carbon nanotubes (CNT). When the emitter 117 is made of carbon nanotubes (CNT), there is an advantage that the electron emission is smoothly performed even at a relatively low driving voltage. Meanwhile, the emitter 117 may be formed in various shapes along both edges of the cathode electrode 112 in addition to the shape shown in FIG. 4. Although not shown in the drawings, a plurality of spacers are provided between the upper substrate 120 and the lower substrate 110 to maintain a constant distance between the upper substrate 120 and the lower substrate 110.

In the field emission type backlight unit having the above structure, the thick gate thick second gate electrode 115b formed on the top surface of the first gate electrode 115a is applied to the anode electrode 122 by the voltage applied to the anode 122. This shields the electric field formed around it. Accordingly, the electric field formed around the emitter 117 by the voltage applied between the cathode electrode 112 and the gate electrode 115 is not affected by the voltage applied to the anode electrode 122. Therefore, in the field emission type backlight unit according to the embodiment of the present invention, the current flowing to the anode electrode 122 is reduced according to the voltage applied to the anode electrode 122, and as a result, the luminous efficiency is reduced. This can be improved.

The current according to the voltage applied to the anode electrode in the conventional field emission type backlight unit shown in Figs. 1 and 2 and the field emission type backlight unit according to the embodiment of the present invention shown in Figs. Was compared. First, in the conventional field emission type backlight unit, when the voltages applied to the anode electrodes were 8 kV and 10 kV, respectively, the currents flowing through the anode electrodes were 1.53 mA and 2.40 mA, respectively. Next, in the field emission type backlight unit according to the exemplary embodiment of the present invention, in which the thickness of the second gate electrode 115b is 20 μm, when the voltages applied to the anode electrodes 122 are 8 kV and 10 kV, respectively, the anode electrode 122 ) Was 1.18 mA and 1.71 mA, respectively. In the field emission type backlight unit having a thickness of 50 μm of the second gate electrode 115b, when the voltages applied to the anode electrodes 122 are 8 kV and 10 kV, respectively, the anode electrode 122 is used. The currents flowing through were 0.80 mA and 1.05 mA, respectively. Referring to the above results, it can be seen that the current flowing through the anode electrode 122 in the field emission backlight unit according to the embodiment of the present invention is reduced than in the conventional field emission backlight unit, and also practice of the present invention In the field emission type backlight unit, as the thickness of the second gate electrode 115b increases, it can be seen that the current flowing through the anode electrode 122 decreases.

5 is a schematic cross-sectional view of a field emission backlight unit according to another exemplary embodiment of the present invention. Hereinafter, a description will be given focusing on differences from the above-described embodiment.

Referring to FIG. 5, the upper substrate 220 and the lower substrate 210 are disposed to face each other at predetermined intervals. An anode electrode 222 is formed on a bottom surface of the upper substrate 220, and a phosphor layer 224 is formed on a bottom surface of the anode electrode 222.

On the upper surface of the lower substrate 210, a plurality of cathode electrodes 212 and gate electrodes 215 are alternately formed. The gate electrode 215 is thicker than the first gate electrode 215a on the upper surface of the first gate electrode 215a and the first gate electrode 215a formed of a conductive material formed on the upper surface of the lower substrate 210. And a second gate electrode 215b. Specifically, the first gate electrode 215a is formed of a thin film having a thickness of about 1000 μm to 3000 μm, and the second gate electrode 215b is formed of a thick film of about 0.3 μm to 50 μm. The second gate electrode 215b may be made of a conductive material or a non-conductive material. The second gate electrode 215b is formed in a thick thick film so that an electric field formed around the emitter 217 is not affected by the voltage applied to the anode electrode 222. The second gate electrode 215b is preferably made of a conductive paste composed of acicular particles or a non-conductive paste. Meanwhile, when the first and second gate electrodes 215a and 215b are both made of a conductive material, the first and second gate electrodes 215a and 215b may be integrally formed.

The cathode electrode 212 is formed of a conductive material formed on the upper surface of the lower substrate 210 than the first cathode electrode 212a and the first cathode electrode 212a on the upper surface of the first cathode electrode 212a. The second cathode electrode 212b is formed to have a thick thickness. In detail, the first cathode electrode 212a is formed of a thin film having a thickness of about 1000 μm to 3000 μm, and the second cathode electrode 212b is formed of a thick film having a thickness of about 0.3 μm to 50 μm. The second cathode electrode 212b may be made of a conductive material or a non-conductive material. The second cathode electrode 212b is formed in a thick thick film so that an electric field formed around the emitter 217 together with the second gate electrode 215b is not affected by the voltage applied to the anode electrode 222. It is to. The second cathode electrode 212b is preferably made of a conductive paste made of acicular particles or a non-conductive paste. Meanwhile, when both the first and second cathode electrodes 212a and 212b are made of a conductive material, the first and second cathode electrodes 212a and 212b may be integrally formed.

Emitters 217 that emit electrons by the voltage applied between the cathode electrode 212 and the gate electrode 215 are formed at both edges of the first cathode electrode 212a. The emitter 217 is made of an electron-emitting material such as, for example, carbon nanotubes (CNT). Although not shown in the drawings, a plurality of spacers are provided between the upper substrate 220 and the lower substrate 210 to maintain a constant gap between the upper substrate 220 and the lower substrate 210.

In the field emission type backlight unit having the above structure, the thick thick film formed on the upper surface of the second gate electrode 215b and the first cathode electrode 212a in the form of a thick film formed on the upper surface of the first gate electrode 215a. Due to the presence of the second cathode electrode 212b, an electric field formed around the emitter 217 by a voltage applied between the cathode electrode 212 and the gate electrode 215 is applied to the anode electrode 222. Will not be affected by

6 is a schematic cross-sectional view of a field emission backlight unit according to another exemplary embodiment of the present invention. Hereinafter, a description will be given focusing on differences from the above-described embodiments.

Referring to FIG. 6, the upper substrate 320 and the lower substrate 310 are disposed to face each other at predetermined intervals. An anode electrode 322 is formed on a bottom surface of the upper substrate 320, and a phosphor layer 324 is formed on a bottom surface of the anode electrode 322.

On the upper surface of the lower substrate 310, a plurality of cathode electrodes 312 and gate electrodes 315 are alternately formed. The cathode electrode 312 is thicker than the first cathode electrode 312a on the upper surface of the first cathode electrode 312a and the first cathode electrode 312a formed of a conductive material formed on the upper surface of the lower substrate 310. And a second cathode electrode 312b. In detail, the first cathode electrode 312a is formed of a thin film having a thickness of about 1000 μm to 3000 μm, and the second cathode electrode 312b is formed of a thick film having a thickness of about 0.3 μm to 50 μm. The second cathode electrode 312b may be made of a conductive material or a non-conductive material. The second cathode electrode 312b is formed in the form of a thick thick film so that the electric field formed around the emitter 317 is not affected by the voltage applied to the anode electrode 322. The second cathode electrode 312b is preferably made of a conductive paste composed of acicular particles or a non-conductive paste. If the first and second cathode electrodes 312a and 312b are both made of a conductive material, the first and second cathode electrodes 312a and 312b may be integrally formed.

The gate electrode 315 is formed on the upper surface of the lower substrate 310 as a thin film having a thickness of approximately 1000 Å to 3000 Å. The gate electrode 315 is made of a conductive material.

Emitters 317 are formed at both edges of the first cathode electrode 312a to emit electrons by a voltage applied between the cathode electrode 312 and the gate electrode 315. The emitter 317 is made of, for example, an electron-emitting material such as carbon nanotubes (CNT). Although not shown in the drawings, a plurality of spacers are provided between the upper substrate 320 and the lower substrate 310 to maintain a constant gap between the upper substrate 320 and the lower substrate 310.

In the field emission type backlight unit having the structure described above, the cathode electrode 312 and the gate electrode 315 are formed due to the presence of the thick cathode thick second cathode electrode 312b formed on the upper surface of the first cathode electrode 312a. The electric field formed around the emitter 317 by the voltage applied therebetween is not affected by the voltage applied to the anode electrode 322.

Although the preferred embodiment according to the present invention has been described above, this is merely illustrative, and those skilled in the art will understand that various modifications and equivalent other embodiments are possible therefrom. Therefore, the true technical protection scope of the present invention will be defined by the appended claims.

As described above, according to the field emission type backlight unit according to the present invention, a second gate electrode of a thick film is formed on an upper surface of a first gate electrode of a thin film, or a second cathode electrode of a thick film is formed on an upper surface of a second cathode electrode of a thin film. By forming a, the electric field formed around the emitter is not affected by the voltage applied to the anode electrode. Accordingly, in the field emission type backlight unit according to the present invention, the current flowing through the anode is reduced than that of the conventional field emission type backlight unit, and as a result, the luminous efficiency can be improved.

Claims (35)

An upper substrate and a lower substrate spaced apart from each other; An anode formed on the bottom surface of the upper substrate; A phosphor layer formed on the bottom surface of the anode electrode; A plurality of cathode electrodes and gate electrodes alternately formed on the upper surface of the lower substrate; And An emitter formed on the cathode electrode; The gate electrode may include a first gate electrode made of a conductive material formed on an upper surface of the lower substrate, and a second gate electrode formed thicker than the first gate electrode on an upper surface of the first gate electrode. Field emission type backlight unit. The method of claim 1, And the first gate electrode is formed of a thin film having a thickness of 1000 μs to 3000 μm, and the second gate electrode is formed of a thick film having a thickness of 0.3 μm to 50 μm. The method of claim 1, And the second gate electrode is formed of a conductive material. The method of claim 3, wherein And the second gate electrode is formed of a conductive paste made of needle-shaped particles. The method of claim 3, wherein And the first and second gate electrodes are integrally formed. The method of claim 1, The second gate electrode is a field emission type backlight unit, characterized in that made of a non-conductive material. The method of claim 6, And the second gate electrode is formed of a non-conductive paste made of acicular particles. The method of claim 1, The emitter is a field emission type backlight unit, characterized in that formed on both edges of the cathode electrode. The method of claim 1, The emitter is a field emission type backlight unit, characterized in that made of carbon nanotubes (CNT). The method of claim 1, And a plurality of spacers between the upper substrate and the lower substrate to maintain a constant distance between the upper substrate and the lower substrate. An upper substrate and a lower substrate spaced apart from each other; An anode formed on the bottom surface of the upper substrate; A phosphor layer formed on the bottom surface of the anode electrode; A plurality of cathode electrodes and gate electrodes alternately formed on the upper surface of the lower substrate; And An emitter formed on the cathode electrode; The gate electrode includes a first gate electrode made of a conductive material formed on an upper surface of the lower substrate, and a second gate electrode formed on the upper surface of the first gate electrode to have a thickness greater than that of the first gate electrode. The electrode includes a first cathode electrode made of a conductive material formed on the upper surface of the lower substrate and a second cathode electrode formed on the upper surface of the first cathode electrode to a thickness thicker than the first cathode electrode. Field emission backlight unit. The method of claim 11, The first gate electrode and the first cathode electrode is formed of a thin film having a thickness of 1000 ~ 3000Å, the second gate electrode and the second cathode electrode is a field emission type, characterized in that formed of a thick film of 0.3㎛ ~ 50㎛ thick Backlight unit. The method of claim 11, The second gate electrode is a field emission type backlight unit, characterized in that made of a conductive material. The method of claim 13, The second gate electrode is a field emission type backlight unit, characterized in that made of a conductive paste consisting of acicular particles. The method of claim 13, And the first and second gate electrodes are integrally formed. The method of claim 11, The second gate electrode is a field emission type backlight unit, characterized in that made of a non-conductive material. The method of claim 16, And the second gate electrode is formed of a non-conductive paste made of acicular particles. The method of claim 11, And the second cathode electrode is made of a conductive material. The method of claim 18, The second cathode electrode is a field emission type backlight unit, characterized in that made of a conductive paste consisting of acicular particles. The method of claim 18, And the first and second cathode electrodes are integrally formed. The method of claim 11, The second cathode electrode is a field emission type backlight unit, characterized in that made of a non-conductive material. The method of claim 21, And the second cathode electrode is made of a non-conductive paste made of acicular particles. The method of claim 11, The emitter is a field emission type backlight unit, characterized in that formed on both edges of the first cathode electrode. The method of claim 11, The emitter is a field emission type backlight unit, characterized in that made of carbon nanotubes (CNT). The method of claim 11, And a plurality of spacers between the upper substrate and the lower substrate to maintain a constant gap between the upper substrate and the lower substrate. An upper substrate and a lower substrate spaced apart from each other; An anode formed on the bottom surface of the upper substrate; A phosphor layer formed on the bottom surface of the anode electrode; A plurality of cathode electrodes and gate electrodes alternately formed on the upper surface of the lower substrate; And An emitter formed on the cathode electrode; The cathode electrode includes a first cathode electrode made of a conductive material formed on the upper surface of the lower substrate and a second cathode electrode formed on the upper surface of the first cathode electrode to a thickness thicker than the first cathode electrode. Field emission type backlight unit. The method of claim 26, The first cathode electrode is formed of a thin film of 1000 ~ 3000Å thickness, the second cathode electrode is a field emission backlight unit, characterized in that formed of a thick film of 0.3㎛ ~ 50㎛ thick. The method of claim 26, The second cathode electrode is a field emission type backlight unit, characterized in that made of a conductive material. The method of claim 28, The second cathode electrode is a field emission type backlight unit, characterized in that made of a conductive paste consisting of acicular particles. The method of claim 28, And the first and second cathode electrodes are integrally formed. The method of claim 26, The second cathode electrode is a field emission type backlight unit, characterized in that made of a non-conductive material. The method of claim 31, wherein And the second cathode electrode is made of a non-conductive paste made of acicular particles. The method of claim 26, The emitter is a field emission type backlight unit, characterized in that formed on both edges of the first cathode electrode. The method of claim 26, The emitter is a field emission type backlight unit, characterized in that made of carbon nanotubes (CNT). The method of claim 26, And a plurality of spacers between the upper substrate and the lower substrate to maintain a constant distance between the upper substrate and the lower substrate.

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