KR100662787B1 - Organic thin film transistor and method fabricating thereof, and fabrication method of liquid crystal display device using the same - Google Patents

Abstract

The present invention relates to a method of manufacturing an organic thin film transistor, comprising the steps of preparing a substrate, forming a gate electrode on the substrate, forming a gate insulating film on the entire surface of the substrate including the gate electrode, It provides a method of manufacturing a thin film transistor comprising the step of forming an organic active layer exposed on both sides by an inorganic pattern on the gate insulating film and forming a source and a drain electrode in contact with the exposed organic active layer. .

Description

ORGANIC THIN FILM TRANSISTOR AND METHOD FABRICATING THEREOF, AND FABRICATION METHOD OF LIQUID CRYSTAL DISPLAY DEVICE USING THE SAME}

1A to 1E are cross-sectional views illustrating a method of manufacturing a conventional organic thin film transistor.

Figures 2a to 2e is a process cross-sectional view showing a method for manufacturing an organic thin film transistor according to the present invention.

3A to 3E are process cross-sectional views showing details of a method of forming an active layer of the present invention.

4 is a cross-sectional view showing a liquid crystal display device according to the present invention.

*** Explanation of symbols for main parts of drawing ***

111,211: gate electrode 113,213: gate insulating film

115,215: active layer 115 ', 215': inorganic protective pattern

116,216: source electrode 117,217: drain electrode

118 and 218: protective film 125: first photosensitive pattern

135: second photosensitive pattern 231: black matrix

233: color filter 235: common electrode

The present invention relates to a method of manufacturing an organic thin film transistor, and in particular, by forming an organic active layer through back exposure, the active pattern is accurate, and the characteristics can be improved by increasing the contact area between the active layer and the source and drain electrodes. A method for manufacturing an organic thin film transistor is disclosed.

Generally, after the development of a polyacetylene which is a conjugated organic polymer showing semiconductor characteristics, organic semiconductors are newly developed due to various characteristics of organic materials such as various methods of synthesis, easy formation in the form of film, flexibility, conductivity, and low production cost. As a material, active research is being conducted in a wide range of fields such as functional electronic devices and optical devices.

Among devices using such conductive polymers, research on organic thin film transistors (OTFTs) using organic materials as active layers has been started since 1980, and many studies are being conducted in the world. The OTFT has a difference in that an organic material is used in place of Si in a semiconductor region in a structure almost the same as that of Si-TFT. Such organic thin film transistors can be formed by printing at atmospheric pressure instead of chemical vapor deposition (CVD) using plasma to form a conventional Si thin film, and furthermore, a continuous process (roll to roll) using a plastic substrate is This has the advantage of enabling low cost transistors.

Therefore, the final purpose of the organic thin film transistor research is to form all the layers of the thin film transistor as an organic film, through which the printing process and the continuous process of the organic thin film transistor at normal pressure. In addition, until now, research into an organic thin film transistor using an active layer as an organic film has been attempted, and a research into which an organic thin film transistor can be manufactured at atmospheric pressure without deposition equipment other than the active layer will continue.

1A to 1E illustrate a conventional manufacturing process of an organic thin film transistor, and in particular, illustrates a process cross-sectional view of a thin film transistor applied to a liquid crystal display device.

First, as shown in FIG. 1A, a transparent substrate 10 is prepared, and then a first metal material is deposited on the first metal layer to form a first metal layer, and then patterned to form the gate electrode 11. In this case, the patterning process of the gate electrode 11 is performed through a photolithography process. The photolithography process includes a photoresist coating process of applying a photoresist film onto an etching target layer to form a pattern, and an exposing process of irradiating light through the mask after aligning a mask on the photoresist film. And a developing process of forming a photosensitive pattern on an etch target layer by applying the exposed photoresist film to a developer, and an etching process of forming a desired pattern by etching the etch target layer using the photosensitive pattern as a mask. process and strip process for removing the photosensitive pattern remaining on the pattern. For example, the first metal material may be an etching target layer, and the gate electrode may be a desired pattern formed by etching the second metal material.

Subsequently, SiNx or SiOx is deposited on the entire surface of the substrate 10 including the gate electrode 11 by plasma CVD to form a gate insulating film 13.

In addition, by depositing a low molecular organic material such as pentacene on the gate insulating layer 13, as shown in FIG. 1B, the active pattern 15 is formed on the gate insulating layer 13 corresponding to the gate electrode 11. To form. Since the pentacene is changed in electrical properties by a photosensitive film, a general photolithography process cannot be used. Accordingly, the active pattern 15 may be formed using a shadow mask, and the shadow mask has an open area to form a pattern, which is different from a mask generally used in an exposure process. Has That is, the mask used in the exposure process is divided into a region that blocks or transmits light, whereas the shadow mask is divided into an open region and a blocked region, and a material to form a pattern is deposited only through the open region. Thus, a pattern having the same shape as that of the open area can be formed. However, the pattern formed through the shadow mask is very inferior to the pattern using the general mask.

Next, by depositing a second metal material on the active layer 15 formed through the method as described above to form a second metal film, and then patterning the second metal film, as shown in Figure 1c, Source and drain electrodes 16 and 17 are formed on the active layer 15, respectively. In this case, the source and drain electrodes 16 and 17 may be formed through the photolithography process of the second metal film, similarly to the gate electrode 11.

Subsequently, as shown in FIG. 1D, an organic film or an inorganic film is deposited on the entire surface of the substrate including the source and drain electrodes 16 and 17 to form a passivation layer 18, and then the passivation layer 18 is patterned and drained. A contact hole 19 exposing a part of the electrode 17 is formed. In this case, the contact hole 19 is formed through a photolithography process.

Finally, after depositing a transparent conductive material such as ITO on the entire surface of the substrate including the contact hole 19, by patterning it, as shown in Figure 1e, through the contact hole 19, the drain electrode ( A pixel electrode 20 electrically connected to 17 is formed. In this case, the pixel electrode 20 is formed through a photolithography process.

The organic thin film transistor formed through the process as described above has a problem in that the accuracy of the pattern is inferior because the active layer is formed using a shadow mask.

In addition, since the active layer is formed through the mask, there is a problem that the number of masks increases.

Accordingly, the present invention has been made to solve the above problems, and an object of the present invention is to provide a method for manufacturing an organic thin film transistor capable of forming an accurate pattern.

Another object of the present invention is to provide a method of manufacturing an organic thin film transistor which can reduce the number of masks.

Another object of the present invention is to provide a method of manufacturing an organic thin film transistor which can improve electrical characteristics of the organic thin film transistor by increasing the contact area between the active layer of the organic thin film transistor and the source and drain electrodes.

Other objects and features of the present invention will be described in detail in the configuration and claims of the following invention.

In order to achieve the above object, the present invention provides a method for manufacturing an organic thin film transistor. The method includes preparing a substrate; Forming a gate electrode on the substrate; Forming a gate insulating film on the entire surface of the substrate including the gate electrode; Forming an organic active layer and an inorganic protective pattern sequentially stacked on the gate insulating layer, wherein the inorganic protective pattern is formed to expose upper surfaces of both sides of the organic active layer; And forming source and drain electrodes in contact with the organic active layer, wherein the source and drain electrodes are in contact with both exposed top surfaces of the organic active layer.
The forming of the organic active layer and the inorganic protective pattern may include sequentially stacking an organic layer and an inorganic layer on a substrate having a gate insulating layer; Applying a photosensitive film on a substrate having an inorganic film; Exposing the photoresist film through a rear surface of a substrate and then developing the photoresist to form a photoresist pattern in a region corresponding to the gate electrode; Etching the organic layer and the inorganic layer using a photosensitive pattern as a mask to form the organic active layer and the inorganic protective pattern; and etching the inorganic protective pattern to expose both upper surfaces of the organic active layer.
The organic layer is preferably formed of pentacene. The organic layer is preferably formed of PAA (polyacrylamine).
The inorganic film is preferably formed of one of a silicon nitride film (SiNx), a silicon oxide film (SiOx), and an indium oxide film (InOx).
The gate electrode is preferably formed through a photolithography process after depositing a metal material such as Cu, Ti, Cr, Al, Mo, Ta, Al alloy. The gate electrode is preferably formed using Ag paste.
The gate insulating layer is preferably formed using an organic material. The organic material is preferably one of polyvinyl-prrolidone (PVP) and polymethly-methacrylate (PMMA).
The source and drain electrodes are preferably formed of a conductive polymer.
Forming a protective film on an entire surface of the substrate including the source and drain electrodes; Forming a contact hole exposing the drain electrode on the passivation layer; And forming a pixel electrode on the passivation layer, the pixel electrode being electrically connected to the drain electrode through the contact hole.
The protective film is preferably formed of an organic material. The organic material is a method of manufacturing an organic thin film transistor, characterized in that using acrylic (acryl) or BCB (benzocyclobutene).
The pixel electrode may be formed of an organic material. PEDOT (Poly Elyene Dioxty Thiospnene) is preferably used as the organic material.
In addition, the present invention provides a method for manufacturing a liquid crystal display device. The method includes preparing first and second substrates; Forming a gate electrode on the first substrate; Forming a gate insulating film over the first substrate having the gate electrode; Sequentially forming an organic film and an inorganic film on the gate insulating film; Applying a photosensitive film on the inorganic film; Exposing the photosensitive film by irradiating light to a back surface of the first substrate to which the photosensitive film is applied; Developing a photoresist film to form a photoresist pattern on the inorganic film corresponding to the gate electrode; Etching the organic layer and the inorganic layer using the photosensitive pattern as a mask to form an organic active layer and an inorganic protective pattern; Etching an inorganic protective pattern to expose both top surfaces of the organic active layer; Forming source and drain electrodes in contact with the organic active layer, wherein the source and drain electrodes are in contact with both exposed upper surfaces of the organic active layer; Forming a protective film exposing the drain electrode on an entire surface of the substrate including a source and a drain electrode; Forming a pixel electrode on the passivation layer; And forming a liquid crystal layer on the first substrate having the pixel electrode and the second substrate.
The organic layer is preferably formed of any one of pentacene and polyacrylamine (PAA).
Forming a black matrix on the second substrate; Forming a color filter on the black matrix; And forming a common electrode on the color filter.
In addition, the present invention provides an organic thin film transistor. The organic thin film transistor includes a substrate; A gate electrode formed on the substrate; A gate insulating film formed on the entire surface of the first substrate having the gate electrode; An organic active layer formed on the gate insulating layer corresponding to the gate electrode; An inorganic protective pattern formed on the organic active layer and exposing upper surfaces of both sides of the organic active layer; And source and drain electrodes in contact with the organic active layer on a substrate having an inorganic protective pattern.
The active layer is preferably formed of pentacene. The active layer is preferably formed of polyacrylamine (PAA).
As described above, the organic thin film transistor of the present invention omits the shadow mask process, and forms an active layer through a back exposure process, so that an accurate active pattern can be formed compared to the conventional art. That is, since the organic photoresist process of the organic layer used as the active layer is impossible in the related art, an organic active pattern is formed using a separate shadow mask. However, since the shadow mask cannot form a fine pattern in nature, the active pattern is There was a problem that can not form correctly. On the other hand, the present invention further forms an inorganic film on the organic film (pentacene or PAA) used as the active layer, so that the back exposure is possible to accurately form a fine pattern. That is, when the organic film is in direct contact with the photoresist film, its electrical characteristics change, and thus it may not function properly as an active layer. Therefore, after depositing an inorganic film on the organic film, the photoresist film is applied on the rear surface to expose the back surface. This would be possible.

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In addition, the present invention can improve the characteristics of the organic thin film transistor by increasing the contact area with the organic active layer and the source and drain electrodes. That is, in the present invention, the photosensitive pattern formed on the inorganic protective pattern is exposed to the both sides of the inorganic protective pattern through an ashing process, and the exposed area is etched to increase the area exposed by the organic active layer, thereby increasing the organic active. The contact area with the source / drain electrodes formed on the layer is increased.

Hereinafter, a method of manufacturing an organic thin film transistor and a method of manufacturing a liquid crystal display device using the same according to the present invention will be described in detail with reference to the accompanying drawings.

2A through 2E are cross-sectional views illustrating a method of manufacturing an organic thin film transistor according to the present invention.

First, as shown in FIG. 2A, a transparent first substrate 110 is prepared, and then a first metal material such as Cu, Ti, Cr, Al, Mo, Ta, and Al alloy is deposited thereon. The gate electrode 111 is formed by patterning. In this case, the patterning process of the gate electrode 111 is performed through a photolithography process. The photolithography process includes a photoresist coating process of coating a photoresist film on an etching target layer to form a pattern, and an exposing process of irradiating light through the mask after aligning a mask on the photoresist film. And a developing process of forming a photosensitive pattern on an object to be etched by applying the exposed photosensitive film to a developer, and an etching process of forming an intended pattern by etching the object to be etched using the photosensitive pattern as a mask. etching process and strip process for removing the photosensitive pattern remaining on the pattern. For example, the first metal material may be an etch target layer, and the gate electrode 111 may be a pattern formed by etching the first metal material.

Meanwhile, the gate electrode 111 may directly print the gate electrode pattern on the substrate without using a patterning process such as a photolithography process using a conductive material such as Ag paste. As described above, when the Ag paste is used, the process can be performed at normal pressure, and thus, the process is much simpler than the case of forming the metal pattern by the photolithography process, and the production efficiency can be improved.

As described above, after the gate electrode 111 is formed on the transparent substrate 110 through a photolithography process of a first metal material or a printing process of Ag paste, the transparent substrate including the gate electrode 111 ( The gate insulating layer 113 is formed by depositing an inorganic material, such as a silicon nitride layer (SiNx) or a silicon oxide layer (SiOx), on the entire surface.

The gate insulating layer 113 may be formed using organic materials such as polyvinyl-prrolidone (PVP) and polymethly-methacrylate (PMMA). In this case, the organic layer may be formed through a coating method. As such, when the organic material is used, the process efficiency can be further improved since the organic material can be formed directly at normal pressure without using vacuum equipment.

Next, an organic layer and an inorganic layer are successively deposited on the gate insulating layer 113, and then patterned through back exposing to form an active pattern 115 having an organic pattern, as shown in FIG. 2B. An inorganic protective pattern 115 'is formed. That is, after the photosensitive film is coated on the inorganic film, light is irradiated through the back surface of the first substrate 110 to form a photosensitive pattern, and the inorganic film and the organic film are etched using the photosensitive pattern as a mask. The layer 115 and the inorganic protective pattern 115 ′ may be formed, respectively. In this case, the inorganic protective pattern 115 ′ is formed to protect the active layer 115. Hereinafter, a method of forming the active layer 115 will be described in more detail through the process cross-sectional views shown in FIGS. 3A to 3E. Do it.

First, as shown in FIG. 3A, an organic film 115a and an inorganic film 115'a are sequentially stacked on the gate insulating film 113, and then a photoresist film (on the inorganic film 115'a) is stacked. 125a) is applied. In this case, the organic film 115a may be formed of a low molecular organic material such as pentacene (pentacene) through a deposition method, or an organic material such as PAA (polyacrylamine) through a coating method. The inorganic film 115'a may be formed by selecting one of inorganic materials such as SiNx, SiOx, or indium oxide.

The inorganic film 115'a is formed to protect the organic film 115a formed under the organic film 115a. Since the organic film 115a is degraded by contact with moisture, the organic film 115a is formed. In order to protect the water from moisture, an inorganic film 115'a is formed on the organic film 115a. That is, in order to pattern the organic film 115a, a photoresist film should be applied on the upper part. When the photoresist film 125a is directly applied on the organic film 115a, moisture contained in the photoresist film 125a is organic. It penetrates into the film 115a and degrades the electrical characteristics of the organic film 115a. Therefore, in the present invention, an inorganic film 115'a is used on the organic film 115a to easily pattern the photoresist film 125a on the inorganic film 115'a.

Subsequently, the photosensitive film 125a is exposed by irradiating light (marked with an arrow on the drawing) through the back surface of the first substrate 110. In this case, since the gate electrode 111 formed on the first substrate 110 blocks light, the light is not irradiated to the photosensitive layer 125a corresponding to the gate electrode 111. As described above, when the photosensitive film 125a partially irradiated with light is applied to the developer, as shown in FIG. 3B, the light irradiated region is removed, and the upper region of the gate electrode 111 not irradiated with light. The first photosensitive pattern 125 is formed on the substrate.

Subsequently, the organic layer 115a and the inorganic layer 115'a are etched using the first photosensitive pattern 125 as a mask, and as shown in FIG. 3C, the active layer 115 made of an organic pattern is formed. Inorganic protective patterns 115 'are formed, respectively.

Thereafter, as shown in FIG. 3D, the first photosensitive pattern 125 is formed through an ashing process to form a second photosensitive pattern 135 exposing both sides of the inorganic protective pattern 115 ′. Generally, the ashing process is to remove the photosensitive material remaining on the substrate after removing the photosensitive pattern. In the present invention, the inorganic protective pattern 115 'is removed by burning the surface of the first photosensitive pattern 125. Will be exposed. That is, as the surface of the first photosensitive pattern 125 is burned and removed, the exposed side and surface of the first photosensitive pattern 125 are removed, and as the side is removed, the active layer 115 formed under the first photosensitive pattern 125 is removed. Some are exposed and the thickness is reduced.

Subsequently, by etching the exposed inorganic protective pattern 115 'using the second photosensitive pattern 135 as a mask, as shown in FIG. 3E, the active layer formed under the inorganic protective pattern 115'. Both sides of 115 are exposed. Thereafter, the second photosensitive pattern 135 is removed through a strip process.

When the active layer 115 is completed through the process of FIGS. 3A to 3E, Cu, Mo, Ta, Al, Cr, Ti, and Al alloys are formed on the entire surface of the transparent substrate 110 including the active layer 115. After depositing the same second metal material, as shown in FIG. 2C, a source electrode 116 and a drain electrode 117 contacting the active layer 115 are formed, respectively. In this case, the patterning process of the source and drain electrodes 116 and 117 is performed through photolithography, like the gate electrode 111.

The source and drain electrodes 116 and 117 may be formed of a conductive polymer material through a coating method or a printing method. As such, when the conductive polymer material is used, the process may be performed at normal pressure, and thus, the process may be simpler than that of the metal pattern formed by the photolithography process, and the production efficiency may be improved.

The source and drain electrodes 116 and 117 come into contact with the exposed top surface as well as the side surface of the active layer 115. That is, the present invention removes both sides of the inorganic protective pattern 115 ′ formed on the active layer 115 in order to reduce the contact area between the active layer 115 and the source and drain electrodes 116 and 117. The upper surface of both sides of 115 is exposed. As described above, exposing upper surfaces of both sides of the active layer 115 may be performed by ashing the first photosensitive pattern 125 formed on the inorganic protective pattern 115 ′ as described in FIGS. 3A to 3E. After forming the second photosensitive pattern 135 exposing both upper surfaces of the 115 ′, the exposed inorganic protective pattern 115 ′ may be etched.

Subsequently, an inorganic material such as SiNx or SiOx is deposited on the entire surface of the substrate on which the source and drain electrodes 116 and 117 are formed, or an organic material such as BCB or acrylic is coated to form the protective layer 118 as shown in FIG. 2D. A portion of the passivation layer 118 is removed to form a contact hole 119 exposing a portion of the drain electrode 117. In this case, the contact hole 119 may be formed by a photolithography process, and when the protective layer 118 is formed of an organic material, the process may be performed at normal pressure, and thus, the process may be simpler than that of the inorganic material. There is an advantage.

Next, in order to apply the organic thin film transistor formed as described above to the liquid crystal display device, as shown in FIG. 2E, the drain electrode 117 is electrically connected to the passivation layer 118 through the contact hole 119. The pixel electrode 120 to be connected is formed. In this case, the pixel electrode 120 may be formed through a photolithography process after depositing a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO). Alternatively, the pixel electrode 120 may be formed using a high molecular organic material such as poly ethylene dioxty thiospnene (PEDOT). In this case, when the pixel electrode 120 is formed of an organic material, the process may be performed at normal pressure.

As described above, when the first substrate 110 on which the organic thin film transistor and the pixel electrode are formed is bonded to the second substrate on which the color filter and the common electrode are formed, and then a liquid crystal layer is formed therebetween, the liquid crystal display device is completed. do.

4 is a cross-sectional view illustrating an organic thin film transistor liquid crystal display device according to an exemplary embodiment of the present invention. As shown in the drawing, the liquid crystal display device 200 includes an organic thin film transistor (OTFT) and a pixel electrode 220 through FIGS. 2A through 2E. ) Is prepared, and then bonded to the second matrix 230 formed by the black matrix 231 and the color filter 233 and the common electrode 235, and the liquid crystal therebetween. By forming the layer 240, it can be produced.

Although the black matrix 231 and the color filter 233 formed on the second substrate 210 and the common electrode 235 are not specifically mentioned, the black matrix 231 may be formed of an organic material or a metal material. Like the pixel electrode 220, the common electrode 235 may be formed of a conductive material such as ITO or IZO or a polymer conductive material such as PEDOT.

Although not shown in the drawing, the common electrode 235 and the pixel electrode 220 may be formed on the first substrate 210. As such, when the common electrode 235 and the pixel electrode 220 are formed on the same substrate (first substrate) 210, the viewing angle characteristic may be improved by horizontal driving of the liquid crystal.

As described above, the present invention provides an organic thin film transistor and a method of manufacturing a liquid crystal display device using the same. That is, the present invention is derived to solve the conventional problem of using a shadow mask to form the active layer of the conventional organic thin film transistor, the present invention after forming an inorganic film on the organic layer forming the active layer, A photosensitive film is coated on the inorganic film, and a photosensitive pattern is formed on the gate electrode through the back exposure. By etching the organic film and the inorganic film using the photosensitive pattern as a mask, it is possible to form an active pattern having a more accurate form than in the prior art.

In addition, the present invention improves the contact area between the active layer and the source and drain electrodes by etching the upper surfaces of both sides of the inorganic protective pattern to expose the upper surfaces of both sides of the active layer. As such, as the contact area between the active layer and the source and drain electrodes increases, the characteristics of the organic thin film transistor can be improved.

In addition, according to the present invention, the active pattern is formed through the back exposure, so that the number of masks can be reduced as compared with the prior art. That is, the active pattern can be formed more precisely than the conventional one without using the expensive shadow mask used to form the conventional active pattern.

In addition, in the present invention, not only the active pattern, but also the gate electrode, the gate insulating layer, the source / drain electrode, and the protective layer may be formed by coating or printing at atmospheric pressure without using an organic material or a paste.

In addition, in the present invention, a method of manufacturing an organic thin film transistor for manufacturing a liquid crystal display device is described, but the basic concept of the present invention forms an active pattern of the organic thin film transistor through the back exposure, and the upper surface of both sides of the active pattern By exposing to increase the contact area between the active layer and the source and drain electrodes, it can be applied not only to liquid crystal display devices but also to all devices requiring thin film transistors.

As described above, according to the present invention, by forming the active pattern of the organic thin film transistor through the back exposure, an accurate organic active pattern can be formed, and the upper surface of both sides of the organic pattern is exposed to expose the active layer, the source and the drain electrode. It is possible to improve the characteristics of the thin film transistor by increasing the contact area therebetween.

In addition, the present invention can be expected to increase the production efficiency according to the reduction of the number of masks as the active pattern is formed without a mask.

Claims (21)

Preparing a substrate; Forming a gate electrode on the substrate; Forming a gate insulating film on an entire surface of the substrate including the gate electrode; Forming an organic active layer and an inorganic protective pattern sequentially stacked on the gate insulating layer, wherein the inorganic protective pattern is formed to expose upper surfaces of both sides of the organic active layer; And And forming source and drain electrodes in contact with the organic active layer, wherein the source and drain electrodes are in contact with both exposed upper surfaces of the organic active layer. The method of claim 1, wherein the forming of the organic active layer and the inorganic protective pattern comprises: Sequentially stacking an organic film and an inorganic film on a substrate having the gate insulating film; Coating a photosensitive film on a substrate having the inorganic film; Exposing the photoresist film through a back surface of the substrate and then developing the photoresist to form a photoresist pattern in a region corresponding to the gate electrode; Etching the organic layer and the inorganic layer using the photosensitive pattern as a mask to form the organic active layer and the inorganic protective pattern; and Etching the inorganic protective pattern to expose both top surfaces of the organic active layer. The method of claim 2, wherein the organic layer is formed of pentacene. The method of claim 2, wherein the organic layer is formed of polyacrylamine (PAA). The method of claim 2, wherein the inorganic layer is formed of one of a silicon nitride layer (SiNx), a silicon oxide layer (SiOx), and an indium oxide layer (InOx). The method of claim 1, wherein the gate electrode is formed by depositing a metal material such as Cu, Ti, Cr, Al, Mo, Ta, Al alloy, and then forming the organic thin film transistor. Way. The method of claim 1, wherein the gate electrode is formed by using an Ag paste. The method of claim 1, wherein the gate insulating layer is formed using an organic material. The method of claim 8, wherein the organic material comprises one of polyvinyl-prrolidone (PVP) and poly-methly-methacrylate (PMMA). The method of claim 1, wherein the source and drain electrodes are formed of a conductive polymer. The method of claim 1, further comprising: forming a protective film on an entire surface of the substrate including the source and drain electrodes; Forming a contact hole exposing the drain electrode on the passivation layer; And And forming a pixel electrode electrically connected to the drain electrode through the contact hole on the passivation layer. The method of claim 11, wherein the passivation layer is formed of an organic material. The method of claim 12, wherein the organic material is acryl or BCB (benzocyclobutene). 12. The method of claim 11, wherein the pixel electrode is formed of an organic material. 15. The method of claim 14, wherein PEDOT (Poly Elyene Dioxty Thiospnene) is used as the organic material. Preparing first and second substrates; Forming a gate electrode on the first substrate; Forming a gate insulating film on an entire surface of the first substrate having the gate electrode; Sequentially forming an organic film and an inorganic film on the gate insulating film; Applying a photosensitive film on the inorganic film; Exposing the photosensitive film to light by irradiating light to a rear surface of the first substrate to which the photosensitive film is applied; Developing the photosensitive film to form a photosensitive pattern on an inorganic film corresponding to the gate electrode; Etching the organic layer and the inorganic layer using the photosensitive pattern as a mask to form an organic active layer and an inorganic protective pattern; Etching the inorganic protective pattern to expose upper surfaces of both sides of the organic active layer; Forming source and drain electrodes in contact with the organic active layer, wherein the source and drain electrodes are in contact with both exposed upper surfaces of the organic active layer; Forming a protective film exposing the drain electrode on an entire surface of the substrate including the source and drain electrodes; Forming a pixel electrode on the passivation layer; And Forming a liquid crystal layer on the first substrate and the second substrate having the pixel electrodes. The method of claim 16, wherein the organic layer is formed of any one of pentacene and polyacrylamine (PAA). The method of claim 16, Forming a black matrix on the second substrate; Forming a color filter on the black matrix; And And forming a common electrode on the color filter. Board; A gate electrode formed on the substrate; A gate insulating film formed on an entire surface of the first substrate having the gate electrode; An organic active layer formed on the gate insulating layer corresponding to the gate electrode; An inorganic protective pattern formed on the organic active layer and exposing upper surfaces of both sides of the organic active layer; And And a source and a drain electrode in contact with the organic active layer on the substrate having the inorganic protective pattern. 20. The organic thin film transistor of claim 19, wherein the active layer is formed of pentacene. 20. The organic thin film transistor of claim 19, wherein the active layer is formed of polyacrylamine (PAA).

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