KR100661730B1 - Cmp pad dresser and cmp apparatus - Google Patents

Abstract

The invention relates to a chemical mechanical polishing (CMP) pad dresser having protrusions formed in a chemical mechanical polishing (CMP) device for planarizing a wafer surface in a semiconductor device manufacturing process. The chemical mechanical polishing (CMP) pad dresser The diameter is formed larger than the diameter of the wafer. As a result, the portion of the wafer polished in the chemical mechanical polishing (CMP) pad is conditioned uniformly, with the result that the wafer is uniformly polished in the chemical mechanical polishing (CMP) apparatus.

Pad Dresser, Chemical Mechanical Polishing, CMP

Description

Chemical mechanical polishing (CPM) pad dresser and chemical mechanical polishing (CPM) device {CMP PAD DRESSER AND CMP APPARATUS}

1 is a diagram illustrating a chemical mechanical polishing (CMP) apparatus.

FIG. 2 is a plan view showing the bottom surface of a conventional cup type pad dresser in a chemical mechanical polishing (CMP) apparatus.

3 is a cross-sectional view showing a cross section of a conventional cup type pad dresser in a chemical mechanical polishing (CMP) apparatus.

4 is a graph showing the profile of a pad when conditioning using a conventional cup-type chemical mechanical polishing (CMP) pad dresser.

FIG. 5 shows a bottom view of a pad dresser according to the present invention in a chemical mechanical polishing (CMP) apparatus.

FIG. 6 is a diagram illustrating a diameter size relationship between a pad dresser and a wafer according to the present invention in a chemical mechanical polishing (CMP) apparatus.

7 is a graph simulating the amount of wear through conditioning by a pad dresser in a chemical mechanical polishing (CMP) apparatus.

<Description of the symbols for the main parts of the drawings>

10: disc 11: chemical mechanical polishing (CMP) pad

50: wafer holding head 55: wafer

100: chemical mechanical polishing (CMP) pad dresser

110: turning

The present invention relates to a chemical mechanical polishing (CMP) pad dresser, and more particularly, the diameter of a chemical mechanical polishing (CMP) pad dresser in a cup-type chemical mechanical polishing (CMP) pad dresser is larger than the diameter of a wafer. For largely formed chemical mechanical polishing (CMP) pad dressers.

In the process of manufacturing a semiconductor device, a chemical mechanical polishing (CMP) process is widely used as a method for planarizing surfaces of layers formed in multiple layers. In the chemical mechanical polishing (CMP) process, a slurry is supplied and applied on top of the chemical mechanical polishing (CMP) pad while rotating the disk to which the chemical mechanical polishing (CMP) pad is attached. By rotating the wafer fixed to the wafer carrier in close contact with the surface of the chemical mechanical polishing (CMP) pad, the surface of the wafer is flattened by the friction effect and the chemical composition of the slurry.

The surface of the chemical mechanical polishing (CMP) pad, which is usually made of polyurethane, is formed with a myriad of fine grooves, and serves to smoothly supply slurry while friction with the wafer surface. However, as the polishing of the wafer proceeds continuously, abrasives or other kinds of foreign matter in the slurry are caught or worn in the grooves, thereby deteriorating the initial surface state. If the chemical mechanical polishing (CMP) pad is deteriorated, the degree of polishing, that is, the polishing rate, decreases, so that the process of regenerating the surface state of the chemical mechanical polishing (CMP) pad (called conditioning) is essential. .

Conditioning of chemical mechanical polishing (CMP) pads is accomplished by rubbing the surface of the chemical mechanical polishing (CMP) pad with a diamond-attached chemical mechanical polishing (CMP) pad dresser. A method of returning to the initial state is used.

There are various types of such chemical mechanical polishing (CMP) pad dressers, and are classified into cup type and flat plate type.

The cup type dresser is a pad dresser in which abrasive particles such as diamond are formed only on the outer surface of the chemical mechanical polishing (CMP) pad dresser, and the flat type dresser has abrasive particles such as diamond on the front of the chemical mechanical polishing (CMP) pad dresser. It is formed pad dresser. 2 and 3, the present invention relates to a cup type chemical mechanical polishing (CMP) pad dresser.

A chemical mechanical polishing (CMP) pad dresser is a diamond particle that is abraded using an electrodeposition process or a deposition process, which is loaded on a nickel substrate and applied electrical energy to an aqueous nickel solution to plate nickel on a metal using a chemical reaction on an electrode surface. Is attached to the disk substrate.

While this cup-type chemical mechanical polishing (CMP) pad dresser rotates on the surface of the chemical mechanical polishing (CMP) pad to condition the surface of the chemical mechanical polishing (CMP) pad, the graph shown in FIG. 4 shows that the conditioning is uniform. It can be seen that it is not made.

4 is a graph showing a profile of a pad when conditioning using a conventional cup-type chemical mechanical polishing (CMP) pad dresser, wherein the conditioned chemical mechanical polishing (CMP) pad is a chemical mechanical polishing (CMP) pad dresser. Even though the chemical mechanical polishing (CMP) pads rotate with each other, there is a difference in the amount of wear at both ends of the projection-formed chemical mechanical polishing (CMP) pad dresser and the central portion where the chemical mechanical polishing (CMP) pad dresser is located. In particular, this amount of wear is more different in the actual process of a large amount of conditioning.

As shown in FIG. 4 and the above-described abrasion due to conditioning, a chemical mechanical polishing (CMP) process is performed to planarize the wafer, resulting in an imbalance of the wafer surface, thereby causing chemical mechanical polishing (CMP). This will greatly affect the uniform abrasiveness of the process.

The technical problem to be solved by the present invention is to solve the problems described above, the chemical mechanical polishing (CMP) pad during conditioning using a cup-type chemical mechanical polishing (CMP) pad dresser in the chemical mechanical polishing (CMP) process To provide a chemical mechanical polishing (CMP) pad dresser in which the amount of wear is balanced according to the position of the chemical mechanical polishing (CMP) pad.

In order to solve this problem, in the present invention, the diameter of the cup-type chemical mechanical polishing (CMP) pad dresser used in the chemical mechanical polishing (CMP) process is larger than the diameter of the chemical mechanical polishing (CMP) wafer.

Specifically, a chemical mechanical polishing (CMP) pad dresser used in a chemical mechanical polishing (CMP) apparatus for planarizing a wafer surface in a semiconductor device manufacturing process, the chemical mechanical polishing (CMP) pad dresser having a diameter of A chemical mechanical polishing (CMP) pad dresser that is formed larger than the diameter of the wafer. It is a chemical mechanical polishing (CMP) pad dresser that is formed about 20% larger than the diameter of the wafer.

DETAILED DESCRIPTION Embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention.

A chemical mechanical polishing (CMP) pad dresser according to an embodiment of the present invention will now be described in detail with reference to the drawings.

First, FIG. 1 is a view illustrating a chemical mechanical polishing (CMP) device, and is a chemical mechanical polishing (CMP) device to be used by mounting a chemical mechanical polishing (CMP) pad dresser developed in the present invention.

First, the chemical mechanical polishing (CMP) apparatus will be described in detail. The rotating disc 10, the chemical mechanical polishing (CMP) pad 11, the wafer holding head 50, and the chemical mechanical polishing (CMP) pad dresser 100 are described. Although not shown, a supply part for supplying a slurry for chemical planarization is also formed.

Looking at each part, the chemical mechanical polishing (CMP) pad 11 is fixed on the rotating disk 10, the chemical mechanical polishing (CMP) pad dresser on top of the chemical mechanical polishing (CMP) pad 11 100 and the wafer holding head 50 are positioned at regular intervals, and the chemical mechanical polishing (CMP) pad dresser 100 and the wafer holding head 50 are also formed to rotate respectively.

First, the wafer holding head 50 has a fixed end capable of fixing the wafer 55 at the lower end thereof. After fixing the wafer 55, the wafer 55 is brought into close contact with the chemical mechanical polishing (CMP) pad 11. After the rotation, the surface of the wafer 55 is planarized.

On the other hand, the chemical mechanical polishing (CMP) pad dresser 100 removes the slurry collected in the pores of the surface of the chemical mechanical polishing (CMP) pad 11, the wafer 55 is in close rotation, and dull the chemical mechanical polishing (CMP) Conditioning to restore the abrasiveness of the pad 11 is performed.

The chemical mechanical polishing (CMP) pad dresser 100 used in the present invention is as shown in FIGS. 5 and 6.

FIG. 5 is a view illustrating a bottom surface of a pad dresser according to the present invention among chemical mechanical polishing (CMP) apparatuses, and FIG. 6 illustrates a diameter size relationship between the pad dresser and the wafer according to the present invention among chemical mechanical polishing (CMP) apparatuses. Figure is shown.

First, Figure 5 is a view showing the lower surface of the chemical mechanical polishing (CMP) pad dresser, the cup-type chemical mechanical polishing in which the projection 110 is formed only on the outer surface of the chemical mechanical polishing (CMP) pad dresser 100; (CMP) Pad dresser is shown.

In addition, the diameter of the chemical mechanical polishing (CMP) pad dresser 100 used herein is clearly shown. The diameter of the chemical mechanical polishing (CMP) pad dresser refers to the diameter of the disk-shaped chemical mechanical polishing (CMP) pad dresser 100.

Although not explicitly shown in FIG. 5, protrusions are formed in the outer circumference of the chemical mechanical polishing (CMP) pad dresser.

As shown in the graphs of FIGS. 4 and 7, when the mechanical mechanical polishing (CMP) pad is actually conditioned, the amount of wear varies greatly at both ends of the chemical mechanical polishing (CMP) pad dresser 100. The difference in the outer part is made larger than the difference in the center part of 100). In this invention, the chemical mechanical polishing (CMP) pad dresser (CMP) is used to grind the wafer 55 in a portion that is not significantly different among the parts conditioned by the chemical mechanical polishing (CMP) pad dresser 100. The diameter of 100 is made larger than the diameter of the wafer 55. In this case, the diameter of the chemical mechanical polishing (CMP) pad dresser 100 is preferably formed to be 20% larger than the diameter of the wafer 55, but may be larger or smaller than the diameter of the wafer 55.

FIG. 6 is a diagram illustrating a diameter size relationship between a pad dresser and a wafer according to the present invention among chemical mechanical polishing (CMP) apparatuses. As described above, the diameter of the chemical mechanical polishing (CMP) pad dresser 100 may be greater than that of the wafer 55. It is shown that formed 20% larger than the diameter of.

7 is a graph simulating the amount of abrasion through conditioning by a pad dresser in a chemical mechanical polishing (CMP) apparatus, and shows two different simulation results in graphs, which are based on the ratio of the rotational speeds of the pad dresser and the pad, respectively. Therefore, the graph is simulated differently. In other words, the unbalanced amount of wear on the inside and outside of the pad shows that the dresser rotation velocity (DR) of the dresser is 1.67 times the table rotation velocity (TR) of the disk on which the pad is mounted. /TR=1.67) shows the results of the simulation, while the wear rate is symmetrical on the inside and outside of the pad is the dresser rotation velocity (DR) of the pad dresser. This graph shows the simulation results under the condition (DR / TR = 0.6) which is 0.6 times the (TR: table rotation velocity).

As can be seen here, it can be seen that the relative rotational speed of the pad dresser and the pad also influences the conditioning. Preferably, the dresser rotation velocity (DR) of the pad dresser is the rotational speed of the disk on which the pad is mounted. The speed should be adjusted by 0.6 times compared to (TR: table rotation velocity).

Although the preferred embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements of those skilled in the art using the basic concepts of the present invention defined in the following claims are also provided. It belongs to the scope of rights.

As described above, in the chemical mechanical polishing (CMP) pad dresser in which the projections used in the chemical mechanical polishing (CMP) apparatus for planarizing the surface of the wafer in the semiconductor device manufacturing process are formed, the chemical mechanical polishing (CMP) The pad dresser forms the diameter larger than the diameter of the wafer, thereby uniformly polishing the wafer in a chemical mechanical polishing (CMP) apparatus.

Claims (7)

A chemical mechanical polishing (CMP) pad dresser having protrusions formed in a chemical mechanical polishing (CMP) apparatus for planarizing the surface of a wafer in a semiconductor device manufacturing process. And the chemical mechanical polishing (CMP) pad dresser is 20% larger in diameter than the diameter of the wafer. delete In claim 1, Chemical projection polishing (CMP) pad dresser, characterized in that the projection is formed of diamond. In claim 3, The diamond is formed in the chemical mechanical polishing (CMP) pad dresser using an electrodeposition process. A chemical mechanical polishing (CMP) apparatus for planarizing the surface of a wafer in the manufacturing process of a semiconductor device, A chemical mechanical polishing (CMP) pad dresser having protrusions, the diameter of which is 20% larger than the diameter of the wafer, A wafer holder for fixing a wafer to be polished, A chemical mechanical polishing (CMP) device comprising a chemical mechanical polishing (CMP) pad on which a wafer is polished. delete In claim 5, Wherein the rotational speed of the chemical mechanical polishing (CMP) pad dresser has a rotational speed of 60% relative to the rotational speed of the chemical mechanical polishing (CMP) pad dresser.

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