KR100668352B1 - 질소 도핑된 단일벽 탄소나노튜브의 제조방법 - Google Patents
질소 도핑된 단일벽 탄소나노튜브의 제조방법 Download PDFInfo
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- KR100668352B1 KR100668352B1 KR1020060001394A KR20060001394A KR100668352B1 KR 100668352 B1 KR100668352 B1 KR 100668352B1 KR 1020060001394 A KR1020060001394 A KR 1020060001394A KR 20060001394 A KR20060001394 A KR 20060001394A KR 100668352 B1 KR100668352 B1 KR 100668352B1
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- carbon nanotubes
- nitrogen
- plasma
- walled carbon
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- E—FIXED CONSTRUCTIONS
- E04—BUILDING
- E04H—BUILDINGS OR LIKE STRUCTURES FOR PARTICULAR PURPOSES; SWIMMING OR SPLASH BATHS OR POOLS; MASTS; FENCING; TENTS OR CANOPIES, IN GENERAL
- E04H4/00—Swimming or splash baths or pools
- E04H4/0018—Easily movable or transportable swimming pools
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/16—Preparation
- C01B32/162—Preparation characterised by catalysts
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2202/00—Structure or properties of carbon nanotubes
- C01B2202/02—Single-walled nanotubes
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- E—FIXED CONSTRUCTIONS
- E04—BUILDING
- E04H—BUILDINGS OR LIKE STRUCTURES FOR PARTICULAR PURPOSES; SWIMMING OR SPLASH BATHS OR POOLS; MASTS; FENCING; TENTS OR CANOPIES, IN GENERAL
- E04H4/00—Swimming or splash baths or pools
- E04H4/0018—Easily movable or transportable swimming pools
- E04H2004/0068—Easily movable or transportable swimming pools made of plastic shells or plastic elements including at least parts of walls and floors
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
- Y10S977/742—Carbon nanotubes, CNTs
- Y10S977/745—Carbon nanotubes, CNTs having a modified surface
- Y10S977/749—Modified with dissimilar atoms or molecules substituted for carbon atoms of the cnt, e.g. impurity doping or compositional substitution
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/842—Manufacture, treatment, or detection of nanostructure for carbon nanotubes or fullerenes
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/842—Manufacture, treatment, or detection of nanostructure for carbon nanotubes or fullerenes
- Y10S977/843—Gas phase catalytic growth, i.e. chemical vapor deposition
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- Condensed Matter Physics & Semiconductors (AREA)
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- Crystallography & Structural Chemistry (AREA)
- Organic Chemistry (AREA)
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- Chemical Kinetics & Catalysis (AREA)
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- Carbon And Carbon Compounds (AREA)
Abstract
Description
Claims (10)
- 기판 위에 촉매금속층을 형성하는 단계;와상기 촉매금속층이 형성된 기판을 반응챔버 내에 장착하는 단계;와상기 반응챔버 내에 H2O 플라즈마 분위기를 형성하는 단계; 및상기 반응챔버 내에 탄소전구체와 질소전구체를 공급하여 상기 H2O 플라즈마 분위기에서 이들을 화학반응시킴으로써, 상기 촉매금속층 상에 질소 도핑된 탄소나노튜브를 성장시키는 단계;를 포함하는 것을 특징으로 하는 단일벽 탄소나노튜브의 제조방법.
- 제 1 항에 있어서,상기 질소 도핑된 탄소나노튜브의 성장시에 상기 반응챔버 내부의 온도가 400℃ 내지 600℃의 범위로 유지되는 것을 특징으로 하는 단일벽 탄소나노튜브의 제조방법.
- 제 1 항에 있어서,상기 반응챔버 내에 탄소원자 1몰당 질소원자 1/6몰 이하로 공급되도록 상기 탄소전구체와 질소전구체의 유량이 제어되는 것을 특징으로 하는 단일벽 탄소나노튜브의 제조방법.
- 제 1 항에 있어서,상기 탄소전구체는 C2H2, CH4, C2H4, C2H6, CO 및 C2H5OH 으로 이루어지는 그룹에서 선택된 적어도 어느 한 물질인 것을 특징으로 하는 단일벽 탄소나노튜브의 제조방법.
- 제 1 항에 있어서,상기 질소전구체는 암모니아(NH3), 히드라진(NH2NH2), 피리딘(C5H5N), 피롤(C4H5N), 아세토니트릴(CH3CN)으로 이루어지는 그룹에서 선택된 적어도 어느 한 물질인 것을 특징으로 하는 단일벽 탄소나노튜브의 제조방법.
- 제 1 항에 있어서,상기 H2O 플라즈마의 RF-파워(RF-power)는 80W 이하로 제어되는 것을 특징으로 하는 단일벽 탄소나노튜브의 제조방법.
- 제 1 항에 있어서,상기 H2O 플라즈마 분위기는 리모트-플라즈마 발생장치에 의해 형성되는 것을 특징으로 하는 단일벽 탄소나노튜브의 제조방법.
- 제 1 항에 있어서,상기 H2O 플라즈마는 리모트 H2O 플라즈마인 것을 특징으로 하는 단일벽 탄소나노튜브의 제조방법.
- 제 1 항에 있어서,상기 촉매금속층은 Ni, Co, Fe 또는 이들의 합금으로 형성되는 것을 특징으로 하는 단일벽 탄소나노튜브의 제조방법.
- 제 1 항 내지 제 9 항의 방법에 의해 제조되는 질소 도핑된 단일벽 탄소나노튜브.
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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KR1020060001394A KR100668352B1 (ko) | 2006-01-05 | 2006-01-05 | 질소 도핑된 단일벽 탄소나노튜브의 제조방법 |
CNA2006100803053A CN1994875A (zh) | 2006-01-05 | 2006-05-09 | 形成氮掺杂单壁碳纳米管的方法 |
US11/447,948 US7713509B2 (en) | 2006-01-05 | 2006-06-07 | Method of forming nitrogen-doped single-walled carbon nanotubes |
JP2006354080A JP4988330B2 (ja) | 2006-01-05 | 2006-12-28 | 窒素ドーピングされた単層カーボンナノチューブの製造方法 |
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KR1020060001394A KR100668352B1 (ko) | 2006-01-05 | 2006-01-05 | 질소 도핑된 단일벽 탄소나노튜브의 제조방법 |
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KR1020060001394A KR100668352B1 (ko) | 2006-01-05 | 2006-01-05 | 질소 도핑된 단일벽 탄소나노튜브의 제조방법 |
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US (1) | US7713509B2 (ko) |
JP (1) | JP4988330B2 (ko) |
KR (1) | KR100668352B1 (ko) |
CN (1) | CN1994875A (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101043582B1 (ko) | 2010-03-03 | 2011-06-22 | 한국과학기술원 | 질소 도핑된 탄소나노튜브를 이용한 염료감응형 태양전지 및 그 제조방법 |
KR20170137392A (ko) * | 2016-06-03 | 2017-12-13 | 전자부품연구원 | 방열기판 및 그의 제조방법 |
Families Citing this family (17)
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US8119032B2 (en) | 2006-02-07 | 2012-02-21 | President And Fellows Of Harvard College | Gas-phase functionalization of surfaces including carbon-based surfaces |
US7767114B2 (en) * | 2006-02-07 | 2010-08-03 | President And Fellows Of Harvard College | Gas-phase functionalization of carbon nanotubes |
US7514125B2 (en) * | 2006-06-23 | 2009-04-07 | Applied Materials, Inc. | Methods to improve the in-film defectivity of PECVD amorphous carbon films |
WO2008023399A1 (fr) * | 2006-08-21 | 2008-02-28 | Fujitsu Limited | NANOTUBES DE CARBONE SEMICONDUCTEURS DE TYPE n, PROCÉDÉ DE PRODUCTION DE CEUX-CI, ET PROCÉDÉ DE PRODUCTION DE DISPOSITIFS SEMICONDUCTEURS |
DE102007062421A1 (de) * | 2007-12-20 | 2009-06-25 | Bayer Technology Services Gmbh | Verfahren zur Herstellung von Stickstoff-dotierten Kohlenstoffnanoröhrchen |
DE102009019747A1 (de) | 2009-05-02 | 2010-11-04 | Bayer Technology Services Gmbh | Verfahren zur Herstellung von Kohlenstoffmaterialien mit Stickstoffmodifikation ausgehend von Kohlenstoffnanoröhrchen |
KR101383535B1 (ko) * | 2011-01-07 | 2014-04-08 | 한국과학기술원 | 무기-나노구조체 복합소재 제조방법, 이를 이용한 탄소나노튜브 복합체 제조 방법 및 이에 의하여 제조된 탄소나노튜브 복합체 |
CN102745679A (zh) * | 2012-07-19 | 2012-10-24 | 南京邮电大学 | 三维石墨烯-碳氮纳米管复合材料的制备方法 |
CN103833021B (zh) * | 2012-11-27 | 2016-01-20 | 海洋王照明科技股份有限公司 | 氮掺杂石墨烯纳米带及其制备方法 |
CN103922318B (zh) * | 2013-01-15 | 2016-04-06 | 海洋王照明科技股份有限公司 | 氮掺杂石墨烯纳米带及其制备方法 |
CN104030265B (zh) * | 2013-03-04 | 2016-04-06 | 海洋王照明科技股份有限公司 | 氮掺杂碳纳米管及其制备方法 |
CN104064367A (zh) * | 2013-03-21 | 2014-09-24 | 海洋王照明科技股份有限公司 | 氮掺杂碳纳米管/离子液体复合薄膜及其制备方法与电容器 |
CN104649247A (zh) * | 2013-11-22 | 2015-05-27 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种形成氮掺杂单壁碳纳米管的方法 |
KR101568247B1 (ko) * | 2014-06-02 | 2015-11-12 | 한국에너지기술연구원 | 질소 도핑된 탄소 표면을 갖는 금속-탄소 하이브리드 복합체 및 그 제조방법 |
KR101786183B1 (ko) | 2015-07-14 | 2017-10-17 | 현대자동차주식회사 | 일체형 유연 열전소자 및 그 제조 방법 |
CN108689398B (zh) * | 2017-04-12 | 2021-12-28 | 南京理工大学 | 一种可控的氮掺杂碳纳米管的制备方法 |
CN112909257A (zh) * | 2021-02-04 | 2021-06-04 | 陕西科技大学 | 一种电磁感应加热法制备FeNi合金催化生长的碳纳米管材料及其应用 |
Family Cites Families (3)
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EP1061041A1 (en) * | 1999-06-18 | 2000-12-20 | Iljin Nanotech Co., Ltd. | Low-temperature thermal chemical vapor deposition apparatus and method of synthesizing carbon nanotube using the same |
TW593730B (en) * | 2002-03-25 | 2004-06-21 | Ind Tech Res Inst | Process of direct low-temperature growth of carbon nanotubes on a substrate |
JP3797276B2 (ja) * | 2002-05-31 | 2006-07-12 | 株式会社日立製作所 | 磁性ナノチューブ |
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- 2006-01-05 KR KR1020060001394A patent/KR100668352B1/ko active IP Right Grant
- 2006-05-09 CN CNA2006100803053A patent/CN1994875A/zh active Pending
- 2006-06-07 US US11/447,948 patent/US7713509B2/en active Active
- 2006-12-28 JP JP2006354080A patent/JP4988330B2/ja active Active
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101043582B1 (ko) | 2010-03-03 | 2011-06-22 | 한국과학기술원 | 질소 도핑된 탄소나노튜브를 이용한 염료감응형 태양전지 및 그 제조방법 |
KR20170137392A (ko) * | 2016-06-03 | 2017-12-13 | 전자부품연구원 | 방열기판 및 그의 제조방법 |
KR101894139B1 (ko) * | 2016-06-03 | 2018-10-04 | 전자부품연구원 | 방열기판 및 그의 제조방법 |
Also Published As
Publication number | Publication date |
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JP2007182375A (ja) | 2007-07-19 |
JP4988330B2 (ja) | 2012-08-01 |
CN1994875A (zh) | 2007-07-11 |
US20070157348A1 (en) | 2007-07-05 |
US7713509B2 (en) | 2010-05-11 |
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