KR100665361B1 - Nitride light emitting diode package - Google Patents

Abstract

A nitride light emitting diode package is provided to improve a heat radiating performance of the package by mounting a light emitting structure on a substrate using a conductive adhering layer. A package substrate(21) is provided with a mounting portion having a cavity on an upper surface thereof. A light emitting structure has a nitride layered structure consisting of first and second conductive nitride semiconductor layers and an active layer(25b) interposed between the semiconductor layers, a lateral insulating layer, and first and second electrodes(29a,29b) connected to the first and second conductive nitride semiconductor layers. A conductive adhering layer is formed between the mounting portion and the light emitting structure. A first wiring(22) has a first connection pad(22a) connected to the second electrode, and a first external terminal(22b) electrically connected to the first connection pad. A second wiring(23) has a second connection pad(23a) and a second external terminal(23b).

Description

Nitride Light Emitting Diode Package {NITRIDE LIGHT EMITTING DIODE PACKAGE}

1 is a side cross-sectional view showing a conventional nitride light emitting diode package.

2 is a side cross-sectional view showing a nitride light emitting diode package according to an embodiment of the present invention.

3A to 3C are cross-sectional views for each step illustrating the manufacturing process of the light emitting diode structure employed in the present invention.

4 is a side cross-sectional view showing a nitride light emitting diode package according to another embodiment of the present invention.

5 is a side cross-sectional view showing a nitride light emitting diode package according to another embodiment of the present invention.

<Code Description of Main Parts of Drawing>

21, 41, 51: package substrate 22, 42, 52: first wiring structure

23, 43, 53: second wiring structure 24, 44, 54: conductive adhesive layer

25,45,55: nitride laminate 26,46,56: bottom reflective layer

27,57: side insulating layer 47: dielectric DBR reflective layer

28, 58: side reflective layers 29a, 49a, 59a: first electrode

29b, 49b, 59b: second electrode

The present invention relates to a nitride light emitting diode package, and more particularly to a light emitting diode package with improved heat emission and light efficiency.

In general, it is important for a light emitting diode package to satisfy two conditions: high light efficiency and excellent heat dissipation characteristics. In particular, in the field of high output light emitting diodes mainly used for lighting and the like, studies are being actively conducted to lower the thermal resistance of package structures in order to improve heat dissipation characteristics.

However, the conventional LED package has a weak structural constraint in terms of heat dissipation. 1 illustrates a conventional light emitting diode package 10.

As shown in FIG. 1, the conventional light emitting diode package 10 includes a package substrate 11 having a mounting area on an upper surface thereof and a light emitting diode 15 mounted in the mounting area. The package substrate 11 includes an upper substrate 11a having an inner side wall having a reflective surface and a lower substrate 11b having first and second wiring structures 12 and 13 formed thereon. The first and second wiring structures 12 and 13 may include first and second connection pads 12a and 13a formed on the upper surface of the package substrate 11 and first and second surfaces formed on the lower surface of the lower substrate 11b, respectively. The external terminals 12b and 13a and first and second conductive via holes 12c and 13c connecting the external terminals 12b and 13a are formed. Here, the light emitting diode 15 is attached to the first connection pad 12a by the conductive adhesive layer TA, so that the first electrode (not shown) and the first connection pad 12a on the bottom surface of the light emitting diode 15 are electrically connected. The second electrode (not shown) on the top surface of the light emitting diode 15 is connected to the second connection pad 13a by a wire. The mounted light emitting diodes 15 are packaged by a transparent resin 19 such as epoxy or silicone resin.

In order to improve the heat dissipation characteristics, even when a package substrate 11 having excellent thermal conductivity such as a silicon or ceramic substrate is used, heat is released only through the bottom surface of the light emitting diode 15, but the other side of the light emitting diode 15 ( In particular, the side) is smooth heat transfer is limited by the resin packaging portion 19 having a relatively low thermal conductivity.

In addition, since the resin packaging portion 19 exists between the reflective layer 17 and the light emitting diode 15 which are inclined upward, there is a problem that it is inevitable that the light reaching the reflective layer 17 is lost by the interval. .

The present invention is to solve the above-described problems of the prior art, by varying the shape of the light emitting structure and the cavity space that is the mounting portion of the package substrate to correspond to the heat dissipation path of the light emitting structure is diversified, and further light extraction by the reflective structure A nitride semiconductor light emitting diode package having improved efficiency is provided.

In order to solve the above technical problem, the present invention

A package substrate having a mounting portion formed of a cavity in which an inner sidewall is inclined on an upper surface thereof; A nitride laminate having a trapezoidal horn structure including first and second conductivity type nitride semiconductor layers and an active layer formed therebetween and having a side inclined along a stacking direction, and a side insulating layer formed on the side of the laminate inclined; A light emitting structure having first and second electrodes connected to the first and second conductivity type nitride semiconductor layers, respectively, and inserted into the mounting portion; A conductive adhesive layer formed between the mounting unit and the light emitting structure to attach the light emitting structure to the mounting unit; A first wiring part formed on an outer region of the mounting part of the upper surface of the package substrate and having a first connection pad connected to the first electrode and a first external terminal formed on the bottom surface of the package to be electrically connected to the first connection pad; Wow; A second wiring part formed on a bottom surface of the mounting part and formed of a second connection pad connected to the second electrode by the conductive adhesive layer and a second external terminal electrically connected to the second connection pad and formed on the bottom surface of the package; It provides a light emitting diode package comprising.

In this way, the light emitting structure is processed so as to correspond to the cavity structure, which is a mounting portion of the package substrate, and is inserted to be in close contact with the inner wall of the mounting portion, so that heat is emitted not only from the bottom surface of the light emitting structure but also from the side surface thereof, thereby improving the heat radiation effect. You can expect.

In one embodiment of the present invention, the package substrate may be made of a material having electrical insulation. Preferably, it may be a ceramic substrate or a silicon substrate excellent in thermal conductivity.

In a preferred embodiment of the present invention, the light emitting structure includes a bottom reflective layer formed of a highly reflective metal on at least the bottom surface of the nitride laminate. The highly reflective metal material may be selected from the group consisting of aluminum (Al), silver (Ag), rhodium (Rh), ruthenium (Ru), platinum (Pt), palladium (Pd) and alloys thereof.

When the side insulating layer is made of a light transmissive material, a side reflective layer may be formed on the insulating layer located on the inclined side of the laminate in combination with or separately from the bottom reflective layer. The side reflection layer may be made of a highly reflective metal material similar to the bottom reflection layer.

Alternatively, the side insulating layer may be formed of a DBR dielectric reflecting layer in which two kinds of dielectric layers having different refractive indices are alternately stacked in place of the side reflecting layer described above.

In another embodiment of the present invention, the package substrate is made of a material having electrical conductivity, and in this case, an insulating layer made of an electrical insulator is formed on at least a surface in contact with the first wiring structure and the second wiring structure. do. If necessary, the insulating layer is formed on the entire surface of the package substrate. The package substrate may be a metal substrate or a semiconductor substrate having electrical conductivity, that is, a semiconductor substrate doped with impurities to have electrical conductivity.

This embodiment may further include a bottom reflective layer and / or a side reflective layer in a manner similar to the above embodiment.

The conductive adhesive layer employed in the present invention may be a conductive material having a relatively low thermal resistance and providing a desired adhesive strength. Although not limited thereto, the conductive adhesive layer may be at least one material selected from the group consisting of Au—Sn, Sn, In, Au—Ag Ag—In, Ag—Ge, Ag—Cu, and Pb—Sn. It may be a conductive epoxy.

Hereinafter, with reference to the accompanying drawings will be described in detail the present invention.

2 is a side cross-sectional view showing a nitride light emitting diode package according to an embodiment of the present invention.

Referring to FIG. 2, the nitride semiconductor light emitting diode package 20 according to the present embodiment includes a package substrate 21 having a mounting portion formed of a cavity C having an inclined inner sidewall at an upper portion thereof, and a trapezoid inserted into the mounting portion. It includes an horn-shaped light emitting structure.

In this embodiment, the package substrate 21 is an insulating substrate such as a ceramic substrate or a semiconductor substrate (not dope) such as silicon (Si) which is not doped with impurities. The package substrate 21 may be formed by separately manufacturing the upper substrate 21a and the lower substrate 21b on which the cavity C is formed, and then pressing or bonding them.

The package substrate 21 has first and second wiring portions 22 and 23. The first wiring part 22 includes a first connection pad 22a provided at an upper surface region of the package substrate 21 outside the cavity C and a first external terminal 22b provided at a lower surface of the package substrate 21. The first connection pad 22a and the first external terminal 22b are connected through a first conductive via hole 22c penetrating through the substrate 21. In the present embodiment, the connection structure of the first connection pad 22a and the first external terminal 22b is illustrated as the first conductive via hole 22c, but the conductive lead is formed along one side of the substrate 21. It may be formed. Similarly, the second wiring part 23 may include a second connection pad 23a provided on the bottom surface of the cavity C, a second external terminal 23b provided on the bottom surface of the package substrate 21, and the second connection part 23b. The second conductive via hole 23c may be connected to the connection pad 23a and the second external terminal 23b.

The light emitting structure includes a nitride laminate 25 including first and second conductivity type nitride semiconductor layers 25a and 25c and an active layer 25b formed therebetween, and the first and second conductivity type nitride semiconductor layers ( First and second electrodes 29a and 29b connected to 25a and 25c, respectively. The first electrode 29a may be connected to the first connection pad 22a by a wire, and the second electrode 29b may be directly connected to the second connection pad 22b together with the mounting.

The nitride laminate 25 has an inverted trapezoidal cone structure having side surfaces inclined along the stacking direction so as to correspond to the shape of the cavity C. A side insulating layer 27 is formed on the inclined side surface of the nitride laminate 25. The side insulating layer 27 prevents the conductive adhesive layer 24 or the metal reflective layer 28 and the laminate 25 from directly contacting each other when the light emitting structure is mounted.

In the present embodiment, the light emitting structure includes a bottom reflective layer 26 on the bottom surface of the laminate 25. The bottom reflective layer 26 is made of a conductive material such that a current is conducted between the second conductivity type nitride semiconductor layer 25c and the second electrode 29b. Preferably, the bottom reflective layer 26 is a highly reflective metal selected from the group consisting of aluminum (Al), silver (Ag), rhodium (Rh), ruthenium (Ru), platinum (Pt), palladium (Pd) and alloys thereof. Or alloys.

Preferably, as in this embodiment, the side reflection layer 28 may be further formed on the side insulation layer 27. However, in this case, the side insulating layer 27 is formed of a light transmissive material. Unlike the bottom reflective layer 26, the side reflective layer 27 is not limited to a material having electrical conductivity, but may be formed of a metal or an alloy similar to the bottom reflective layer 26.

As such, the light emitting structure, that is, the stack 25 is manufactured in a trapezoidal horn shape, and the cavity C of the package substrate 21 is manufactured in a corresponding structure, thereby the package substrate ( 21) can be mounted to be in close contact. The mounting of the light emitting structure can be realized by a conductive adhesive layer.

The conductive adhesive layer 24 used in the present invention may be a conductive material having a relatively low thermal resistance and providing a desired adhesive strength. Preferably, the conductive adhesive layer 24 is at least one material selected from the group consisting of Au—Sn, Sn, In, Au—Ag Ag—In, Ag—Ge, Ag—Cu, and Pb—Sn. Alternatively, it may be a conductive epoxy.

As a result, heat transfer is smoothly performed not only on the bottom surface of the light emitting structure but also on the side surface thereof, and thus the heat dissipation performance of the package 20 can be remarkably improved.

In addition, as in the present embodiment, the light extraction efficiency can be improved by using the side reflection layer 28 together with the bottom reflection layer 26. In particular, in the structure of the present invention, since the side reflection layer 28 can be minimized the gap with the light emitting structure, it is possible to expect a more effective brightness enhancement by minimizing the light loss.

Such a package structure is realized by forming a trapezoidal horn nitride laminate having side surfaces inclined along the stacking direction. The manufacturing process of this trapezoidal cone-shaped nitride laminate is illustrated in Figs. 3A to 3C.

As shown in FIG. 3A, a light emitting diode is formed by sequentially forming a first conductivity type nitride semiconductor layer 35a, an active layer 35b, and a second conductivity type nitride semiconductor layer 35c on a substrate 31 such as sapphire. The nitride laminate 35 is provided.

Next, as shown in FIG. 3B, in consideration of the etching rate of the mask and the nitride and the thickness of the nitride laminate 35, a trapezoidal horn mask M having an appropriate thickness is formed on the nitride laminate 35. Etch. Preferably, the present etching process may be a dry etching process such as reactive ion etching.

As a result, as shown in Fig. 3C, a nitride laminate 35 'having a desired trapezoidal cone shape can be obtained. In addition, the process of forming the insulating layer, the side reflecting layer (or the dielectric DBR reflecting layer to be described later) and the bottom reflecting layer (here formed on the upper surface) described in FIG. 2, and the electrode forming process may be further performed. However, the electrode formed on the first conductivity type nitride layer 35a may be formed after the laser lift-off process.

As used herein, the trapezoidal horn-shaped nitride laminate refers to a structure having a side inclined along the lamination direction and having a side cross section trapezoidal as shown. The planar structure of the nitride laminate employed in the present invention may be implemented in various shapes such as polygons such as rectangles, as well as circles, and as described in the present process, is obtained by appropriately modifying the mask formation and etching conditions. Can lose.

4 is a side cross-sectional view showing a nitride light emitting diode package according to another embodiment of the present invention.

Referring to FIG. 4, the nitride semiconductor light emitting diode package 40 according to the present embodiment includes a package substrate 41 having a mounting portion formed of a cavity C having an inclined inner sidewall at an upper portion thereof, and a trapezoid inserted into the mounting portion. It includes an horn-shaped light emitting structure. In this embodiment, the package substrate 41 is an insulating substrate similarly to Fig. 2, and has a structure accordingly, but the side reflecting layer and the side insulating layer structures are improved.

More specifically, the package substrate 41 has first and second wiring portions 42 and 43 similar to FIG. 2. That is, the first wiring part 42 includes the first connection pad 42a provided in the upper surface region of the package substrate 41 outside the cavity C and the first external terminal 42b provided on the lower surface of the package substrate 41. And a first conductive via hole 42c connecting the same, and the second wiring part 43 is provided on the second connection pad 43a on the bottom surface of the cavity C and on the bottom surface of the package substrate 41. The second external terminal 43b and the second conductive via hole 43c connecting the second external terminal 43b may be implemented.

In addition, the light emitting structure includes a nitride laminate 45 including first and second conductivity type nitride semiconductor layers 45a and 45c and an active layer 45b formed therebetween, and the first and second conductivity type nitride semiconductors. First and second electrodes 49a and 49b connected to layers 45a and 45c, respectively. The first electrode 49a may be connected to the first connection pad 42a by a wire, and the second electrode 49b may be directly connected to the second connection pad 42b together with the mounting.

The nitride stack 45 includes a dielectric bragg reflection (DBR) reflective layer formed on the inclined side surface in place of the side insulating layer. As described above, in the package structure according to the present invention, an insulating layer is required in order to prevent a short circuit occurring when a conductive material such as a conductive adhesive layer directly contacts the side surface of the laminate. In this embodiment, this insulating structure is replaced with a dielectric which is a DBR reflecting structure.

The dielectric DBR reflective layer 47 has a structure in which two kinds of dielectric thin films having different refractive indices are alternately stacked several times. This dielectric reflective layer not only has a high reflectivity of 90% or more, but also provides an insulating structure that can replace the side insulating layer. The dielectric DBR reflective layer 47 may be made of an oxide or nitride of an element selected from the group consisting of Si, Zr, Ta, Ti, and Al. For example, by repeatedly depositing a SiO ₂ film and a Si ₃ N ₄ film at about 500 to 700 microseconds in thickness six times, a reflectance of up to 98% can be obtained, and the reflective layer 47 itself can be provided as an appropriate insulating portion. .

On the other hand, since the dielectric DBR reflective layer 47 may be formed to have a thickness of about 1 micrometer (for example, about 1 μm), it does not act as a barrier to the lateral heat transfer side intended in the present invention.

In addition, the light emitting structure includes a bottom reflective layer 46 on the bottom surface of the laminate 45. The bottom reflective layer 46 is made of a conductive material similar to the bottom reflective layer of FIG. 2 so that a current is conducted between the second conductivity type nitride semiconductor layer 45c and the second electrode 49b. As described above, as in the present embodiment, the structure of the side reflecting layer is converted into an insulating material, that is, the dielectric DBR reflecting layer structure, thereby simplifying the process and simultaneously improving the reflection efficiency and the heat dissipation performance.

In the present embodiment, the light emitting structure may be mounted such that the side and bottom surfaces thereof are almost in close contact with the surface of the mounting portion by the conductive adhesive layer 44 which ensures thermal and electrical conductivity, thereby improving heat dissipation performance.

In the above-described embodiment, the package substrate has been specifically described as a substrate having electrical insulation, but the present invention is not limited thereto. That is, the package substrate employed in the present invention may be a substrate having electrical conductivity, such as a metal substrate or a semiconductor substrate having conductivity. 5 illustrates a package structure employing a conductive substrate.

As shown in FIG. 5, the nitride semiconductor light emitting diode package 50 includes a package substrate 51 having a mounting portion formed of a cavity C having an inclined inner sidewall thereon and a trapezoidal horn-shaped light emitting inserted into the mounting portion. It includes a structure.

The package substrate 51 employed in the present embodiment may be a metal substrate or a semiconductor substrate having electrical conductivity (eg, impurity doped to have conductivity). The package substrate 51 may be obtained through a process of forming the insulating layer IL on the entire outer surface after forming the via hole structure and the cavity. The insulating layer IL forming process may be a known process such as a thermal oxidation process. In this embodiment, an example in which the insulating layer IL is formed on the entire surface of the package substrate is illustrated, but it is sufficient that the insulating layer IL is formed only in a portion where the first and second wiring portions 52 and 53 are formed. .

The first wiring part 52 includes a first connection pad 52a provided at an upper surface area of the package substrate 51 outside the cavity C and a first external terminal 52b provided on the bottom surface of the package substrate 51 and the same. The first conductive via hole 52c may be connected to each other. The second wiring part 53 may similarly include a second connection pad 53a provided on the bottom surface of the cavity C and the package substrate 21. The second external terminal 53b provided at a lower surface thereof and the second conductive via hole 53c connecting the second connection pad 53a and the second external terminal 53b may be implemented.

The light emitting structure includes a nitride laminate 55 including first and second conductivity type nitride semiconductor layers 55a and 55c and an active layer 55b formed therebetween, and the first and second conductivity type nitride semiconductor layers ( First and second electrodes 59a and 59b connected to 55a and 55c, respectively. The first electrode 59a may be connected to the first connection pad 52a by a wire, and the second electrode 59b may be directly connected to the second connection pad 52b together with the mounting.

On the inclined side surface of the nitride laminate 55, a side insulating layer 57 is formed, similar to the embodiment shown in FIG. 2, and the bottom surface of the laminate 55 is made of a highly reflective metal material. Reflective layer 56 is formed. In addition, a side reflective layer 58 may be further formed on the side insulating layer 57. This side reflective structure omits the side reflective layer and can be replaced with a dielectric DBR reflective structure, as described in FIG.

The light emitting structure having such a structure may be mounted such that side and bottom surfaces thereof are almost in close contact with the surface of the mounting portion by the conductive adhesive layer 54, which ensures thermal and electrical conductivity.

As such, the invention may be usefully implemented in conductive package substrates, which are typically advantageous as heat sinks.

According to the present invention, since the nitride stack constituting the light emitting diode is manufactured in a trapezoidal horn shape and the mounting portion of the package substrate is manufactured in a corresponding structure, the nitride stack can be inserted to closely contact the package substrate to the side surface of the light emitting structure. have. In this case, since heat transfer is smoothly performed not only on the lower surface of the light emitting structure but also on the side surface thereof, the heat dissipation performance of the light emitting diode package can be significantly improved. In addition, according to the present invention, the effect of improving the light efficiency can be expected by shortening the distance between the side reflection layer and the light emitting source.

As such, the present invention is not limited by the above-described embodiments and the accompanying drawings, but is intended to be limited by the appended claims, and is not limited to the technical spirit of the present invention described in the claims. It will be apparent to those skilled in the art that substitutions, modifications, and variations are possible.

As described above, according to the present invention, by mounting a light emitting structure having a trapezoidal horn shape on the package substrate having a cavity having a structure corresponding thereto by using a conductive adhesive layer, the package is in close contact with the package substrate to the side of the light emitting structure Can provide. Therefore, since the heat transfer is realized not only on the lower surface of the light emitting structure but also on the side thereof, the heat dissipation performance of the light emitting diode package can be significantly improved, and further, the light efficiency can be improved by shortening the distance between the side reflective layer and the light emitting source. have.

Claims (20)

A package substrate having a mounting portion formed of a cavity in which an inner sidewall is inclined on an upper surface thereof; A nitride laminate having a trapezoidal horn structure comprising a first and a second conductivity type nitride semiconductor layer and an active layer formed therebetween and having a side inclined along the stacking direction, a side insulating layer formed on the inclined side; A light emitting structure having first and second electrodes connected to the first and second conductivity type nitride semiconductor layers, respectively, and inserted into the mounting portion; A conductive adhesive layer formed between the mounting portion and the light emitting structure to attach the nitride semiconductor light emitting structure to the mounting portion; A first wiring part formed on an outer region of the mounting part of the upper surface of the package substrate and having a first connection pad connected to the first electrode and a first external terminal formed on the bottom surface of the package to be electrically connected to the first connection pad; ; And A second wiring part formed on a bottom surface of the mounting part and formed of a second connection pad connected to the second electrode by the conductive adhesive layer and a second external terminal electrically connected to the second connection pad and formed on the bottom surface of the package; LED package including. The method of claim 1, The package substrate is a light emitting diode package, characterized in that made of a material having electrical insulation. The method of claim 2, The package substrate is a light emitting diode package, characterized in that the ceramic substrate or silicon substrate. The method of claim 2, The light emitting structure is a light emitting diode package, characterized in that formed on at least a lower surface of the nitride laminate and a bottom reflective layer made of a highly reflective metal material. The method of claim 4, wherein The highly reflective metal is a light emitting diode package, characterized in that selected from the group consisting of aluminum (Al), silver (Ag), rhodium (Rh), ruthenium (Ru), platinum (Pt), palladium (Pd) and alloys thereof . The method according to any one of claims 1, 2 and 4, The side insulating layer is made of a light transmissive material, the light emitting diode package further comprises a side reflective layer formed on the side insulating layer located on the inclined side of the nitride laminate. The method of claim 6, The side reflection layer is made of a highly reflective metal material selected from the group consisting of aluminum (Al), silver (Ag), rhodium (Rh), ruthenium (Ru), platinum (Pt), palladium (Pd) and alloys thereof. Light emitting diode package. The method according to any one of claims 1, 2 and 4, The side insulating layer includes a light emitting diode package comprising a dielectric DBR reflecting layer in which two dielectric layers having different refractive indices are alternately stacked. The method of claim 1, The package substrate is made of a material having an electrical conductivity, the light emitting diode package, characterized in that the insulating layer formed on at least a surface in contact with the first wiring structure and the second wiring structure. The method of claim 9, The package substrate is a light emitting diode package, characterized in that the metal substrate or a semiconductor substrate having electrical conductivity. The method of claim 9, The insulating layer is a light emitting diode package, characterized in that formed on the entire surface of the package substrate. The method of claim 9, The light emitting structure is a light emitting diode package, characterized in that formed on at least a lower surface of the nitride laminate and a reflective layer made of a highly reflective metal. The method of claim 12, The highly reflective metal material is selected from the group consisting of aluminum (Al), silver (Ag), rhodium (Rh), ruthenium (Ru), platinum (Pt), palladium (Pd) and alloys thereof. package. The method of claim 9 or 12, The side insulating layer is made of a light transmissive material, the light emitting diode package further comprises a side reflective layer formed on the side insulating layer located on the inclined side of the nitride laminate. The method of claim 14, The side reflecting layer is made of a metal material selected from the group consisting of aluminum (Al), silver (Ag), rhodium (Rh), ruthenium (Ru), platinum (Pt), palladium (Pd) and alloys thereof. LED package. The method of claim 9 or 12, The side insulating layer includes a light emitting diode package comprising a dielectric DBR reflecting layer in which two dielectric layers having different refractive indices are alternately stacked. The method of claim 1, The package substrate is made of a material having an electrical conductivity, the light emitting diode package, characterized in that an electrical insulator is formed on at least a surface in contact with the first wiring structure and the second wiring structure. The method of claim 1, The conductive adhesive layer may include at least one material selected from the group consisting of Au-Sn, Sn, In, Au-Ag Ag-In, Ag-Ge, Ag-Cu, and Pb-Sn. . The method of claim 1, The conductive adhesive layer is a conductive epoxy, characterized in that the light emitting diode package. The method of claim 1, The first and second wiring parts may further include first and second conductive via holes formed through the package substrate in a vertical direction to connect the first and second connection pads to the first and second external terminals, respectively. Light emitting diode package comprising a.

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