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KR100639517B1 - CD equipment with diffuser - Google Patents

CD equipment with diffuser Download PDF

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Publication number
KR100639517B1
KR100639517B1 KR1020000031609A KR20000031609A KR100639517B1 KR 100639517 B1 KR100639517 B1 KR 100639517B1 KR 1020000031609 A KR1020000031609 A KR 1020000031609A KR 20000031609 A KR20000031609 A KR 20000031609A KR 100639517 B1 KR100639517 B1 KR 100639517B1
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South Korea
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diffuser
chamber
plasma
electrode plate
outside
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KR1020000031609A
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Korean (ko)
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KR20010110903A (en
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장근하
황철주
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주성엔지니어링(주)
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45559—Diffusion of reactive gas to substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4407—Cleaning of reactor or reactor parts by using wet or mechanical methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)

Abstract

본 발명은 챔버; 챔버 내의 하부에 설치되는 서셉터; 챔버 내의 상부에 설치되며 복수 개의 구멍을 가지는 부도체로 이루어진 확산기; 확산기와 이격되며 외부와 차단되도록 확산기 상부에 설치되는 전극판; 및 외부로부터 확산기와 전극판 사이의 공간에 기체를 주입하기 위한 기체주입관을 포함하는 것을 특징으로 한다. 본 발명에 의하면, 상기 전극판에는 성막이 되지 않기 때문에, 종래와 같이 샤워헤드에 성막된 필름이 온도차이로 인해 박리됨으로써 생기는 미세입자의 발생을 줄일 수 있다. 또한, 상기 확산기는 세라믹으로 제조되기 때문에 플라즈마에 의한 아크 발생이 방지되어 플라즈마를 이용한 챔버 크리닝시에도 전극의 손상이 감소된다. The present invention chamber; A susceptor installed in the lower portion of the chamber; A diffuser installed at an upper portion of the chamber and formed of a non-conductor having a plurality of holes; An electrode plate spaced apart from the diffuser and disposed above the diffuser to block the outside; And a gas injection tube for injecting gas into the space between the diffuser and the electrode plate from the outside. According to the present invention, since the film is not formed on the electrode plate, it is possible to reduce the generation of fine particles caused by peeling of the film formed on the shower head due to the temperature difference as in the prior art. In addition, since the diffuser is made of ceramic, arc generation by plasma is prevented, and damage to the electrode is reduced even during chamber cleaning using plasma.

확산기, 플라즈마, PECVD, 샤워헤드, 아크, 양극화처리Diffuser, Plasma, PECVD, Shower Head, Arc, Anodized

Description

확산기를 구비한 ＣＶＤ 장비 {Chemical vapor deposition equipment having a diffuser} Chemical vapor deposition equipment having a diffuser             

도 1a 및 도 1b는 종래의 평판전극 샤워헤드방식의 PECVD 장비를 설명하기 위한 개략도들; 1A and 1B are schematic views for explaining a conventional PECVD apparatus of a flat electrode shower head type;

도 2는 본 발명에 따른 CVD 장비를 설명하기 위한 개략도이다.
2 is a schematic diagram illustrating a CVD apparatus according to the present invention.

< 도면의 주요 부분에 대한 참조번호의 설명 ><Description of Reference Numbers for Main Parts of Drawings>

10, 110: 챔버 20, 120: 챔버리드(chamber lid)10, 110: chamber 20, 120: chamber lid

30, 130a, 130b: O-링 40, 140: 서셉터30, 130a, 130b: O-ring 40, 140: susceptor

45, 145: 서셉터 이송수단 50, 150: 글라스 기판(glass substrate)45, 145: susceptor transfer means 50, 150: glass substrate

60, 160: 슬롯밸브 70: 샤워헤드60, 160: slot valve 70: shower head

170: 확산기 80a, 180a: 기체 주입관170: diffuser 80a, 180a: gas injection tube

80b, 180b: 기체 배기관 190: 플라즈마 전극
80b, 180b: gas exhaust pipe 190: plasma electrode

본 발명은 CVD(chemical vapor deposition) 장비에 관한 것으로서 특히, 반응공간에 미세입자가 형성되거나, 플라즈마 공정시 플라즈마 전극에서 아크가 발생하는 것을 방지하기 위하여 부도체로 이루어진 확산기(diffuser)를 구비한 CVD 장비에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to CVD (chemical vapor deposition) equipment. In particular, CVD equipment having a diffuser made of a non-conductor to prevent the formation of fine particles in the reaction space or the generation of arcs in the plasma electrode during the plasma process. It is about.

TFT - LCD(thin film transistor liquid crystal display)와 같은 반도체 소자 제조 공정에 있어서 PECVD(plasma enhanced chemical vapor deposition)막은 일반적으로 평판전극의 샤워헤드(showerhead) 방식으로 증착된다. 이 때 플라즈마 형성시에 전극에서 아크(arc)가 발생하며 또한 전극에 증착된 필림이 누적되면 열팽창율의 차이로 미세입자가 박리되어 반도체 장치에 불량을 유발하게 된다.In a semiconductor device manufacturing process such as a thin film transistor liquid crystal display (TFT-LCD), a plasma enhanced chemical vapor deposition (PECVD) film is generally deposited by a showerhead method of a plate electrode. At this time, an arc is generated in the electrode during plasma formation, and when the film deposited on the electrode is accumulated, fine particles are peeled off due to a difference in thermal expansion rate, thereby causing a defect in the semiconductor device.

도 1a 및 도 1b는 종래의 평판전극 샤워헤드방식의 PECVD 장비를 설명하기 위한 개략도들이다. 도 1a 및 도 1b를 참조하면, 외부와 차단되는 반응 공간은 반응기에 의해 제공된다. 여기서, 반응기는 하부는 챔버(10)로, 상부는 챔버리드(chamber lid; 20)로 구성된다. 반응 공간과 외부와의 효과적인 차단을 위해 챔버리드(20)와 챔버(10)의 결합부위에는 O-링(30)이 설치된다.1A and 1B are schematic views for explaining a conventional PECVD apparatus of a flat electrode shower head type. 1A and 1B, a reaction space that is isolated from the outside is provided by a reactor. Here, the reactor is composed of a lower chamber 10, the upper chamber chamber (chamber lid) 20. O-ring 30 is installed at the coupling portion of the chamber lead 20 and the chamber 10 to effectively block the reaction space and the outside.

챔버(10)의 측벽에는 슬롯밸브(slot valve, 60)가 설치되어 있으며, 로드락부(미도시)로부터 챔버(10)내로 글라스 기판(50)을 이송시키기 위해서는 슬롯밸브(60)를 열어야 한다. 챔버(10)의 내부에는 서셉터(Susceptor, 40)가 설치되어 있으며, 여기에 글라스 기판(50)이 안착된다. 서셉터(40)는 서셉터 이송수단(45)에 의해 상하로 이동시킬 수 있다. 서셉터(40) 내부에는 안착되는 글 라스 기판(50)을 가열시키기 위한 히터(미도시)가 장착된다.A slot valve 60 is installed on the side wall of the chamber 10, and the slot valve 60 must be opened to transfer the glass substrate 50 from the load lock unit (not shown) into the chamber 10. A susceptor 40 is installed in the chamber 10, and the glass substrate 50 is seated therein. The susceptor 40 can be moved up and down by the susceptor transfer means 45. Inside the susceptor 40, a heater (not shown) for heating the glass substrate 50 to be seated is mounted.

반응기 내에 기체를 주입하기 위한 기체 주입관(80a)은 샤워헤드(showerhead, 70)에 연결된다. 샤워헤드(70)는 글라스 기판(50)에 대향하는 면에는 복수개의 분사공(70a)이 형성되어 있으며, 기체 주입관(80a)에 의해 샤워헤드(70)로 공급된 기체는 분사공(70a)을 통하여 글라스 기판(50)의 전 표면에 균일하게 분사된다. 주입된 기체는 기체 배기관(80b)을 통하여 배기된다. A gas injection tube 80a for injecting gas into the reactor is connected to a showerhead 70. The shower head 70 has a plurality of injection holes 70a formed on a surface of the shower head 70 facing the glass substrate 50, and the gas supplied to the shower head 70 by the gas injection pipe 80a is injected into the injection holes 70a. ) Is uniformly sprayed on the entire surface of the glass substrate 50. The injected gas is exhausted through the gas exhaust pipe 80b.

샤워헤드(70)는 플라즈마 전극의 역할도 동시에 수행할 수 있도록 RF 전력공급원에 연결되고, 서셉터(40)는 접지된다. 샤워헤드(70)는 플라즈마 전극의 역할도 수행해야 하므로 도전체 예컨대, 알루미늄으로 이루어져 있다. 여기서, 플라즈마에 의한 아크(arc)의 발생이나 표면보호를 위해 통상 그 표면은 양극화처리(anodizing)된다. The showerhead 70 is connected to an RF power supply so as to simultaneously perform the role of the plasma electrode, and the susceptor 40 is grounded. Since the showerhead 70 should also serve as a plasma electrode, the showerhead 70 is made of a conductor such as aluminum. Here, the surface is usually anodized for generation of arcs or surface protection by plasma.

반응기 내에서 박막증착공정이 진행될 경우에는 샤워헤드(70)의 표면에도 박막이 다소 증착된다. 이때, 샤워헤드(70)와 이에 증착된 박막의 열팽창계수의 차이로 인하여 증착된 박막에 열응력(thermal stress)이 생기고, 이에 의하여 박막이 일부 박리됨으로써 원하지 않는 미세입자가 발생하게 된다. 통상, 반응기의 내벽이나 샤워헤드(70)의 표면에 박막이 어느 정도 증착되면, 이 박막을 제거하기 위하여 샤워헤드(70)에 RF 전력을 인가하여 플라즈마, 예컨대 NF3 플라즈마 식각을 행한다. When the thin film deposition process is performed in the reactor, the thin film is somewhat deposited on the surface of the shower head 70. At this time, thermal stress is generated in the deposited thin film due to the difference in the coefficient of thermal expansion of the showerhead 70 and the thin film deposited thereon, whereby the thin film is partially peeled off, thereby generating unwanted fine particles. Usually, when a thin film is deposited to some extent on the inner wall of the reactor or the surface of the shower head 70, RF power is applied to the shower head 70 to remove the thin film, and plasma, for example, NF 3 plasma etching is performed.

그러나, 이러한 플라즈마 식각과정이나 제조 장치의 기타 작동 과정에서 양극화 처리된 부분이 손상을 받게 된다. 이렇게 양극화 처리된 부분이 손상되면, 나 중에 플라즈마 분위기에서 공정을 수행할 경우에 아크가 발생하게 되어 증착되는 박막의 막질이 저하될 뿐만 아니라 미세입자가 발생하게 될 소지가 많아지게 된다.
However, the anodized portion is damaged during the plasma etching process or other operation of the manufacturing apparatus. When the anodized part is damaged, an arc is generated when the process is performed in a plasma atmosphere later, and the film quality of the deposited thin film is not only degraded, but also more likely to generate fine particles.

따라서, 본 발명이 이루고자 하는 기술적 과제는 반응기에서의 미세입자의 발생원을 제거하고, 아크 발생이나 기타 오염원의 발생을 감소시킬 수 있는 반도체 소자 제조 장치를 제공하는 데 있다.
Therefore, the technical problem to be achieved by the present invention is to provide a device for manufacturing a semiconductor device that can remove the source of the fine particles in the reactor, and reduce the generation of arc or other pollutant.

상기 기술적 과제를 달성하기 위한 본 발명의 일 예에 의한 반도체 소자 제조장치는: 챔버; 상기 챔버 내의 하부에 설치되는 서셉터; 상기 챔버 내의 상부에 설치되며 복수 개의 구멍을 가지는 부도체로 이루어진 확산기; 상기 확산기와 이격되며 외부와 차단되도록 상기 확산기 상부에 설치되는 전극판; 및 외부로부터 상기 확산기와 상기 전극판 사이의 공간에 기체를 주입하기 위한 기체주입관을 포함하는 것을 특징으로 한다.
이 때, 상기 확산기와 상기 전극판 사이에 O-링을 개재하여 상기 기체가 주입되는 공간을 외부로부터 차단시키는 것을 특징으로 한다.The semiconductor device manufacturing apparatus according to an embodiment of the present invention for achieving the above technical problem comprises: a chamber; A susceptor installed in a lower portion of the chamber; A diffuser disposed above the chamber and formed of a non-conductor having a plurality of holes; An electrode plate spaced apart from the diffuser and disposed above the diffuser to block the outside; And a gas injection tube for injecting gas into a space between the diffuser and the electrode plate from the outside.
At this time, the space in which the gas is injected is blocked from the outside via an O-ring between the diffuser and the electrode plate.

여기서, 상기 확산기는 세라믹이나 석영같은 부도체로 이루어지는 것이 바람직하다. Here, the diffuser is preferably made of an insulator such as ceramic or quartz.

이하, 본 발명의 바람직한 실시예를 첨부한 도면을 참조하여 상세히 설명한다.Hereinafter, with reference to the accompanying drawings, preferred embodiments of the present invention will be described in detail.

도 2는 본 발명의 실시예에 따른 CVD 장비를 설명하기 위한 개략도이다. 구체적으로, 챔버(110)는 상부가 개방되며, 확산기(170)가 개방부를 덮는다. 여기서, 확산기(170)에는 챔버(110)의 내부를 노출시키는 복수개의 구멍이 형성되어 있으며, 챔버(110)와 확산기(170)의 결합 부위에는 O-링(130b)이 설치된다. 확산기(170)는 평판의 형상을 가지며, 세라믹이나 석영으로 이루어진다. 확산기(170) 및 챔버(110)에 의해 형성되는 공간이 반응공간을 이룬다. 확산기(170) 상부에는 확산기(170)와 수mm 간격만큼 이격되어 전극판(190)이 설치된다. 확산기(170)와 전극판(190) 사이에 외부와 차단된 별도의 공간이 형성되도록 확산기(170)와 전극판(190) 사이에 O-링(130c)이 설치된다. 통상 전극판(190)은 알루미늄이나 스테인레스 강으로 이루어진다.2 is a schematic diagram illustrating a CVD apparatus according to an embodiment of the present invention. Specifically, the chamber 110 is open at the top, the diffuser 170 covers the opening. Here, a plurality of holes are formed in the diffuser 170 to expose the inside of the chamber 110, and an O-ring 130b is installed at a coupling portion of the chamber 110 and the diffuser 170. The diffuser 170 has a flat plate shape and is made of ceramic or quartz. The space formed by the diffuser 170 and the chamber 110 forms a reaction space. An electrode plate 190 is installed on the diffuser 170 and spaced apart from the diffuser 170 by a few mm interval. An O-ring 130c is installed between the diffuser 170 and the electrode plate 190 to form a separate space between the diffuser 170 and the electrode plate 190. Typically, the electrode plate 190 is made of aluminum or stainless steel.

챔버(110)의 측벽에는 슬롯밸브(160)가 설치되어 있으며, 로드락부(미도시)로부터 챔버(110) 내로 글라스 기판(150)을 이송시키기 위해서는 슬롯밸브(160)를 열어야 한다. 챔버(110)의 내부에는 서셉터(140)가 설치되어 있으며, 여기에 글라스 기판(150)이 안착된다. 서셉터(140)는 서셉터 이송수단(145)에 의해 상하로 이동시킬 수 있다. 서셉터(140) 내부에는 글라스 기판(150)을 가열시키기 위한 히터(미도시)가 장착된다.The side wall of the chamber 110 is provided with a slot valve 160, in order to transfer the glass substrate 150 from the load lock unit (not shown) into the chamber 110, the slot valve 160 must be opened. The susceptor 140 is installed in the chamber 110, and the glass substrate 150 is seated therein. The susceptor 140 may be moved up and down by the susceptor transfer means 145. A heater (not shown) for heating the glass substrate 150 is mounted in the susceptor 140.

챔버(110)는 챔버리드(120)에 의해 덮혀지며, 확산기(170) 및 전극판(190)은 챔버(110)와 챔버리드(120)에 의해 형성되는 공간 내에 설치된다. 여기서, 챔버리드(120)는 그 내부에 히터(120a)와 수냉관(120b)을 구비한다. 히터(120a)와 수냉관(120b)은 반응공간을 적절한 온도로 유지시키기 위한 것이다. 챔버리드(120)와 챔버(110)의 결합부위에는 O-링(130a)이 설치되어 있다. The chamber 110 is covered by the chamber lead 120, and the diffuser 170 and the electrode plate 190 are installed in a space formed by the chamber 110 and the chamber lead 120. Here, the chamber lead 120 has a heater 120a and a water cooling tube 120b therein. The heater 120a and the water cooling tube 120b are for maintaining the reaction space at an appropriate temperature. An O-ring 130a is installed at a coupling portion of the chamber lead 120 and the chamber 110.

기체 주입관(180a)에 의해 외부로부터 전극판(190)과 확산기(170) 사이의 공간에 기체가 주입된다. 이와 같이 상기 기체 주입관(180a)에 의해 공급된 기체는 확산기(170)의 구멍을 통하여 글라스 기판(150)의 전 표면에 균일하게 분사된다. 반응공간 내의 기체는 기체 배기관(180b)을 통하여 배기된다. Gas is injected into the space between the electrode plate 190 and the diffuser 170 from the outside by the gas injection tube 180a. As such, the gas supplied by the gas injection pipe 180a is uniformly sprayed on the entire surface of the glass substrate 150 through the holes of the diffuser 170. The gas in the reaction space is exhausted through the gas exhaust pipe 180b.

상술한 바와 같이 본 발명의 실시예에 따르면, 플라즈마는 확산기(170)와 챔버(110)로 이루어진 공간 내에만 형성된다. 그런데, 통상 반도체 소자 제조 과정에서 확산기(170)에 증착되는 박막과 확산기(170) 사이의 열팽창계수 차이는 알루미늄 재질 상에 박막이 증착된 경우보다 작으므로, 박막의 박리현상이 종래보다 덜 발생한다. 따라서, 미세입자의 발생을 줄일 수 있다. As described above, according to the embodiment of the present invention, the plasma is formed only in the space consisting of the diffuser 170 and the chamber 110. However, in the semiconductor device manufacturing process, the difference in thermal expansion coefficient between the thin film deposited on the diffuser 170 and the diffuser 170 is smaller than that of the thin film deposited on the aluminum material, so that peeling of the thin film occurs less than before. . Therefore, generation of fine particles can be reduced.

일반적으로, Na+, Ca++ 과 같은 이온들은 산화막등에서 유동전하(mobile charge)의 역할을 하기 때문에 반도체 장치의 신뢰성을 떨어뜨린다. 그런데, 확산기(120)를 이루는 세라믹이나 석영을 세정함에 있어서는 통상 불산 등의 화학용액을 사용하기 때문에 인체나 환경에 존재하는 Na+, Ca++ 등으로 인한 박막의 오염이 감소되고, 또한 수분기 등과 같은 탈기체(outgasing)의 근원을 감소시킬 수 있다.
In general, ions such as Na + and Ca ++ lower the reliability of semiconductor devices because they play a role of mobile charge in oxide films and the like. However, in cleaning ceramics and quartz constituting the diffuser 120, since chemical solutions such as hydrofluoric acid are generally used, contamination of the thin film due to Na + , Ca ++, etc. present in the human body or the environment is reduced, It is possible to reduce the source of outgasing such as.

상술한 바와 같이 본 발명의 실시예에 의하면, 플라즈마가 확산기(170)와 챔버(110)로 이루어진 공간 내에만 형성되고 전극판(190)에는 성막이 되지 않기 때문에, 종래와 같이 샤워헤드에 성막된 필름이 온도차이로 인해 박리됨으로써 생기는 미세입자의 발생을 줄일 수 있다. 또한, 확산기(170)는 세라믹으로 제조되기 때문에 플라즈마에 의한 아크 발생이 방지되어 플라즈마를 이용한 챔버 크리닝시에도 전극의 손상이 감소된다. As described above, according to the embodiment of the present invention, since the plasma is formed only in the space consisting of the diffuser 170 and the chamber 110 and is not formed on the electrode plate 190, the plasma is deposited on the shower head as in the prior art. It is possible to reduce the generation of fine particles caused by the film peeling due to the temperature difference. In addition, since the diffuser 170 is made of ceramic, arc generation by the plasma is prevented, and thus damage to the electrode is reduced even during chamber cleaning using the plasma.

그리고, 불산을 이용하여 확산기(170)를 클리닝함으로써 청정도를 유지할수 있으며, 성막되는 필름과 확산기(170)의 열팽창율이 비슷하기 때문에 열변화에 따른 필름의 박리가 억제되어 플라즈마 클리닝주기를 연장할 수 있다. 따라서, 생산성이 향상된다. In addition, the cleanliness can be maintained by cleaning the diffuser 170 using hydrofluoric acid, and since the thermal expansion rate of the film to be formed is similar to that of the diffuser 170, the peeling of the film due to the thermal change is suppressed to extend the plasma cleaning cycle. Can be. Therefore, productivity is improved.

본 발명은 상기 실시예에만 한정되지 않으며, 본 발명의 기술적 사상 내에서 당 분야에서 통상의 지식을 가진 자에 의해 많은 변형이 가능함은 명백하다.The present invention is not limited to the above embodiments, and it is apparent that many modifications are possible by those skilled in the art within the technical spirit of the present invention.

Claims (4)

챔버;chamber; 상기 챔버 내의 하부에 설치되는 서셉터;A susceptor installed in a lower portion of the chamber; 상기 챔버 내의 상부에 설치되며 복수 개의 구멍을 가지는 부도체로 이루어진 확산기;A diffuser disposed above the chamber and formed of a non-conductor having a plurality of holes; 상기 확산기와 이격되며 외부와 차단되도록 상기 확산기 상부에 설치되는 전극판; 및An electrode plate spaced apart from the diffuser and disposed above the diffuser to block the outside; And 외부로부터 상기 확산기와 상기 전극판 사이의 공간에 기체를 주입하기 위한 기체주입관을 포함하는 것을 특징으로 하는 CVD 장비.CVD equipment comprising a gas injection tube for injecting gas into the space between the diffuser and the electrode plate from the outside. 제 1항에 있어서, 상기 확산기와 상기 전극판 사이에 O-링을 개재하여 상기 기체가 주입되는 공간을 외부로부터 차단시키는 것을 특징으로 하는 CVD 장비.The CVD apparatus of claim 1, wherein a space in which the gas is injected is blocked from outside through an O-ring between the diffuser and the electrode plate. 제 1항에 있어서, 상기 확산기는 세라믹 또는 석영으로 이루어지는 것을 특징으로 하는 CVD 장비.The CVD apparatus of claim 1, wherein the diffuser is made of ceramic or quartz. 삭제delete
KR1020000031609A 2000-06-09 2000-06-09 CD equipment with diffuser KR100639517B1 (en)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0273624A (en) * 1988-09-08 1990-03-13 Fujitsu Ltd Gas guiding device for cvd use
US5232509A (en) * 1991-07-09 1993-08-03 Korea Institute Of Science And Technology Apparatus for producing low resistivity tungsten thin film comprising reaction temperature measuring thermocouples
KR950030743A (en) * 1994-04-18 1995-11-24 김주용 Plasma Deposition Equipment and Nitride Film Forming Method Using The Same
KR960706572A (en) * 1993-12-14 1996-12-09 투그룰 야살. Gas diffuser plate assembly and RF electrode
JPH10321608A (en) * 1997-05-07 1998-12-04 Samsung Electron Co Ltd Dry etching apparatus
JPH11307521A (en) * 1998-04-20 1999-11-05 Sharp Corp Plasma cvd equipment and its use

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0273624A (en) * 1988-09-08 1990-03-13 Fujitsu Ltd Gas guiding device for cvd use
US5232509A (en) * 1991-07-09 1993-08-03 Korea Institute Of Science And Technology Apparatus for producing low resistivity tungsten thin film comprising reaction temperature measuring thermocouples
KR960706572A (en) * 1993-12-14 1996-12-09 투그룰 야살. Gas diffuser plate assembly and RF electrode
KR950030743A (en) * 1994-04-18 1995-11-24 김주용 Plasma Deposition Equipment and Nitride Film Forming Method Using The Same
JPH10321608A (en) * 1997-05-07 1998-12-04 Samsung Electron Co Ltd Dry etching apparatus
JPH11307521A (en) * 1998-04-20 1999-11-05 Sharp Corp Plasma cvd equipment and its use

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