KR100472853B1 - Method for fabricating of OLED - Google Patents

Abstract

The present invention relates to an organic electroluminescent device, and more particularly to a method of manufacturing an organic electroluminescent device.

That is, after the barrier ribs are patterned in the photolithography process for patterning the barrier ribs, the lower insulating layer exposed between the patterned barrier ribs is continuously removed.

Next, the partition wall is scraped off evenly throughout the plasma.

Therefore, since the partition wall formed in the organic light emitting device and the insulating film formed under the partition can be patterned by a single mask process, the process time can be shortened and the cost can be reduced through the process simplification, and the yield can be improved.

Description

Manufacturing method of organic electroluminescent device {Method for fabricating of OLED}

The present invention relates to an organic light emitting device, and more particularly, to a method of manufacturing an organic light emitting device.

In general, organic light emitting diodes inject electrons and holes into the light emitting layer from the electron injection electrodes and the hole injection electrodes, respectively, to inject the injected electrons. ) Is a device that emits light when the exciton, which is a combination of holes and holes, drops from the excited state to the ground state.

Due to this principle, unlike a conventional thin film liquid crystal display device, since a separate light source is not required, there is an advantage in that the volume and weight of the device can be reduced.

In addition, the organic EL device exhibits high quality panel characteristics (low power, high brightness, high reaction rate, low weight). OELD is considered to be a powerful next-generation display that can be used in most consumer electronic applications such as mobile terminal, CHS, PDA, Camcorder and Palm PC.

In addition, since the manufacturing process is simple, there is an advantage that can reduce the production cost more than conventional LCD.

The method of driving the organic light emitting diode can be classified into a passive matrix type and an active matrix type.

The passive matrix type organic light emitting device has a simple structure and a simple manufacturing method. However, the passive matrix type organic light emitting device has a high power consumption and a large area of the display device, and the opening ratio decreases as the number of wirings increases.

On the other hand, an active matrix organic light emitting diode has an advantage of providing high luminous efficiency and high image quality.

1 is a view schematically showing a configuration of a conventional organic light emitting device.

(The passive matrix organic electroluminescent device will be described as an example.)

In general, the planar configuration of the passive matrix organic light emitting device is a plurality of first electrodes (4) configured in one direction spaced apart from each other on the substrate (2), and the electric field is formed on the first electrode (4) When applied, the organic light emitting layer 18, which emits light with a predetermined light, is formed on the organic light emitting layer 18, and vertically intersects the first electrode 4 to define the pixel P. The second electrode 20 is formed to be spaced apart by a predetermined interval in the direction.

FIG. 1 is a cross-sectional view showing a section cut in one direction along the optional first electrode 4.

As illustrated, a transparent first electrode 4 is formed on the substrate 2 on which the plurality of pixels P are defined.

A partition wall 16 formed of an insulating material and having a predetermined height H is formed between the pixels P on the first electrode 4.

The organic emission layer 18 is formed on the first electrode 4 corresponding to each pixel P, and the second electrode 20 is formed on the organic emission layer 18.

The first electrode 4 is a hole injection electrode for injecting holes into the organic light emitting layer 18, and the second electrode 20 is an electron for injecting electrons into the organic light emitting layer 18. It functions as an injection electrode.

In the process of forming the second electrode 20, the partition 16 may change the characteristics of the organic light emitting layer 18 by chemicals during the developing process and the chemical etching process. Used to prevent doing so.

In other words, the second electrode 20 of each pixel P may be independently formed without using a general photo-lithography process.

Therefore, after forming the partition 16 and depositing the organic light emitting layer 18, the organic light emitting layer 18 is not deposited on the side surface of the partition 16 and is planarly formed on the partition 16. The result formed only on the upper part and the upper part of the said 1st electrode 4 can be obtained.

In this case, an insulating film pattern 12 having an area larger than an upper area of the partition wall 16 is formed below the partition wall 16, which is a lower first electrode during the process of depositing the second electrode 20. 4) and the second electrode 20 for the purpose of preventing poor contact.

In this case, the organic light emitting layer 18 may be formed of a multilayer including a light emitting layer 18a, a hole transport layer 18c, and an electron transport layer 18b, and may be configured as a single layer composed of only a light emitting layer.

Hereinafter, a method of manufacturing an organic light emitting diode according to the related art will be described with reference to FIGS. 2A to 2D.

2A to 2D are cross-sectional views illustrating a process of manufacturing an organic light emitting diode according to a conventional process sequence, in accordance with a process sequence.

First, as shown in FIG. 2A, a transparent conductive metal having a large work function, such as indium tin oxide (ITO), is deposited on the substrate 2 to form a first electrode, which is an anode electrode. The electrode 4 is formed.

An insulating film 6 is formed on the first electrode 4.

The insulating layer 6 is formed by depositing one selected from the group of inorganic insulating materials including silicon nitride (SiN _x ) and silicon oxide (SiO ₂ ).

Subsequently, a photoresist (hereinafter referred to as "PR") is deposited on the insulating film 6 to form a PR layer 8, and then a mask M is positioned on the PR layer 8. Let's do it.

The process of exposing the lower PR layer by irradiating light on the upper portion of the mask (M) is performed.

Next, as shown in FIG. 2B, when the exposed PR layer is shaped, the lower insulating film 6 is exposed.

Next, as shown in FIG. 2C, when the exposed insulating layer 6 is etched and the residual PR layer is removed, the insulating layer pattern 12 having a planar configuration extending in one direction spaced apart from each other is formed.

Subsequently, a barrier layer 14 is formed by applying a resin such as PR to the entire surface of the substrate 2 on which the insulating film pattern 12 is formed.

As shown in FIG. 2D, when the barrier layer (14 of FIG. 2C) is subjected to the same photo-lithography process as the process of forming the insulation layer pattern, the barrier rib (14) is formed on the barrier layer 12. 16) is formed.

Next, as shown in FIG. 2E, the organic light emitting layer 18 is formed on the first electrode 4 between the partitions 16.

Next, the second electrode 20 is formed on the organic emission layer 18 through a deposition process.

In this case, the second electrode 20 is formed by selecting one of metals composed of calcium (Ca), magnesium (Mg), aluminum (Al), or the like as a cathode electrode, or lithium flowline / aluminum ( And a double metal layer such as LiF / Al).

The insulating layer pattern 12 may prevent the second electrode 20 from contacting the lower first electrode 4.

Through the process as described above, it is possible to manufacture a conventional organic light emitting device including a partition wall.

However, in the conventional manufacturing process, a separate photolithography process is performed to form the insulating film pattern and the partition wall.

Therefore, the process time is delayed by the two photolithography processes, and there is a problem of lowering the yield in terms of cost.

The present invention has been proposed to solve the above-described problem, and by forming the insulating film pattern formed on the partition wall and the lower portion thereof through a single photolithography process, an object thereof is to reduce process time and cost by simplifying the process.

According to an aspect of the present invention, there is provided an organic light emitting display device comprising: forming a transparent first electrode on a substrate; Stacking an insulating film and a barrier layer on the first electrode; Patterning the partition layer by a photolithography process to form a partition wall; Removing the insulating film exposed between the partition walls to form an insulating film pattern having the same planar shape as the partition wall under the partition wall; Etching the partition wall while maintaining the shape of the partition wall so that the planar width of the partition wall is smaller than the width of the insulating film pattern; Forming an organic light emitting layer on the first electrode exposed between the barrier ribs; And forming a second electrode on the organic light emitting layer.

The first electrode is an anode electrode for injecting holes into the light emitting layer, and the second electrode is a cathode electrode for injecting electrons into the light emitting layer.

In this case, the first electrode is indium-tin oxide (ITO), the second electrode is formed of a metal selected from a metal containing calcium (Ca), aluminum (Al), magnesium (Mg), or lithium fluorine / aluminum It is formed from a double metal layer of (LIF / Al).

The partition wall has a planar shape and is spaced apart from each other extending in one direction.

The barrier rib is etched by an isotropic etching method, and the etching method includes a plasma etching method.

According to an aspect of the present invention, there is provided a method of manufacturing an organic light emitting display device, comprising: preparing a first substrate and a second substrate; Defining a plurality of pixels on the first substrate and the second substrate; Forming a switching element and a driving element connected thereto for each pixel of the first substrate; Forming a connection electrode in contact with the driving element and configured independently for each pixel; Forming a transparent first electrode on a front surface of the second substrate; Forming an insulating film on the first electrode; Forming a barrier layer on the insulating layer; Patterning the barrier rib layer by a photolithography process to form a grid-shaped barrier rib including transmission holes in a portion corresponding to the pixel portion; Etching the insulating film exposed between the partition walls to form an insulating film pattern overlapping in planar shape with the partition wall; Etching the partition wall while maintaining the shape of the partition wall so that the planar width of the partition wall is smaller than the width of the insulating layer pattern; Forming a light emitting layer on an upper portion of the first electrode exposed through the through hole of the partition wall; Forming a second electrode on the emission layer to be configured independently for each pixel area; Bonding the first substrate to the second substrate such that the connection electrode of the first substrate contacts the second electrode.

Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings.

First Embodiment

3A to 3E are cross-sectional views illustrating a process of manufacturing a passive matrix organic light emitting device according to the present invention, in the order of a process.

First, as shown in FIG. 3A, a transparent conductive metal having a large work function, such as indium tin oxide (ITO), is deposited on the substrate 100 to form a first electrode, which is an anode electrode. 102 is formed.

An insulating film 104 is formed on the first electrode 102.

The insulating layer 104 may be formed by depositing one selected from the group of inorganic insulating materials including silicon nitride (SiN _x ) and silicon oxide (SiO ₂ ).

Subsequently, a barrier layer 106 is formed by applying a material (for example, a resin such as a photoresist) to form a barrier on the insulating film 104.

Next, as shown in FIG. 3B, the partition 108 is formed through the photolithography process described above.

In the passive matrix organic light emitting device, the partitions 108 extend in one direction spaced apart from each other in a plane.

Next, as shown in FIG. 3C, the lower insulating film exposed between the partition walls 108 is etched by a predetermined method to form an insulating film pattern 105 having the same planar shape as the partition 108 under the partition 108. To form.

In this case, the planar width of the partition wall 108 should be smaller than the planar width of the insulating film pattern 105. This is because when the width of the partition wall 108 is greater than the width of the insulating layer pattern 105, a defect in which the first electrode 102 and the second electrode contact each other may occur in a process of depositing a second electrode.

Therefore, as shown in FIG. 3D, an etching process for reducing the size of the partition wall 108 to be further performed.

At this time, it is important that the lower insulating layer pattern 105 is not affected while the partition 108 is etched. For this purpose, the partition 108 is etched by using a plasma etching method.

Since the plasma etching method isotropically etched and hardly affects the lower insulating film pattern 12, which is an inorganic film, the lower insulating film pattern 105 remains intact and only the partition 108 is scraped off while maintaining its shape. .

Next, as shown in FIG. 3E, an organic material is deposited between the barrier ribs 108 and the barrier ribs 108 to form an organic emission layer 110.

The organic light emitting layer 110 may use only the main light emitting layer, and may form an electron transporting layer and a hole transporting layer on the upper and lower portions of the main light emitting layer, respectively.

Subsequently, a single layer or a double layer such as lithium fluorine / aluminum (LiF / Al) deposited by selecting and depositing a metal composed of calcium (Ca), magnesium (Mg), aluminum (Al), and the like on top of the light emitting layer 110. The second electrode 112 is formed of a metal layer.

Through the process as described above it is possible to manufacture a passive matrix organic light emitting device according to the present invention.

Hereinafter, a modification of the present invention will be described with reference to the second embodiment.

Second Embodiment

The second embodiment of the present invention relates to an active matrix type organic light emitting diode, and in particular, the first substrate comprises a thin film transistor array portion, and a separate organic light emitting diode having a dual plate structure having an organic light emitting portion formed on a second substrate. DPOLED).

That is, the invention of Example 1 described above can be applied to configure the light emitting unit in the DPOLED structure of Example 2.

First, a configuration of an active matrix organic light emitting display device will be described with reference to FIG. 4.

4 is an equivalent circuit diagram of an active matrix organic light emitting display device.

As illustrated, a plurality of gate lines 109 are configured to be spaced apart from each other and extend in one direction on the substrate 200.

The data line 117 and the power line 119 are configured to intersect the gate line 109, and the power line 119 and the data line 117 are alternately configured.

The switching element T _S and the driving element T _{D are} formed in an area defined by the gate wiring 109, the data wiring 117, and the power supply wiring 119.

A thin film transistor is used as the switching element T _S and the driving element T _D , and the thin film transistor includes a gate electrode, an active layer, a source electrode, and a drain electrode.

In this case, the source electrode of the switching element T _S is configured to be connected to the data line 117, the gate electrode to the gate line 109, and the drain electrode to the gate electrode of the driving element T _D.

The drain electrode of the driving element T _D is configured to be in contact with the electrode of the organic light emitting part EL, and the source electrode is configured to be connected to the power line 119.

In addition, the storage capacitor C _ST is configured in parallel with the driving element T _D.

Hereinafter, an active matrix organic light emitting diode having an equivalent circuit diagram as described above will be described with reference to FIG. 5.

5 is a cross-sectional view schematically showing the structure of an organic light emitting device having a general DPOLED structure. (Only the driving thin film transistor and the pixel portion are shown.)

As illustrated, the organic light emitting device 199 according to the present invention is configured by bonding the transparent first substrate 200 and the second substrate 300 through a sealant 400.

The first and second substrates 200 and 300 are defined as a plurality of pixel regions P. In the first substrate 100, a thin film transistor (switching element and a driving element) T and an array are formed for each pixel region P. FIG. A wiring (not shown) is comprised.

The first electrode 302, which is a transparent hole injection electrode, is formed on the front surface of the substrate 300 on the second substrate 300, and the organic emission layer 310 and the second on the first electrode 302. The electrodes 312 are sequentially configured.

The second electrode 312 is independently configured for each position corresponding to the pixel area P through the partition wall, and the partition wall 308 is formed in a grid shape.

The insulating film pattern 305 having the same lattice shape as the partition wall 308 is formed below the partition wall.

The second electrode 312 and the drain electrode of the driving element T _D are indirectly connected through a separate connection electrode 224. When the connection electrode 224 is formed on the first substrate 200 and the first and second substrates 200 and 300 are bonded together, the connection electrode 224 is a second electrode which is an electron injection electrode formed on the emission layer 310. Contact 312.

In this case, the connection electrode 224 is preferably formed of the same material as the second electrode 312.

Hereinafter, a method of manufacturing an organic light emitting diode according to the present invention will be described with reference to the drawings.

6A to 6C are cross-sectional views illustrating a method of manufacturing a thin film transistor array unit constituting an organic light emitting diode according to an exemplary embodiment of the present invention.

6A to 6C are cross-sectional views of a driving element and a pixel portion (light emitting portion) connected to the thin film transistor array portion formed on the first substrate.

As shown in FIG. 6A, a first one selected from a group of silicon insulating materials including silicon nitride (SiN _x ) and silicon oxide (SiO ₂ ) on a front surface of a substrate 200 in which a plurality of pixel regions P is defined. A buffer layer 202 which is an insulating film is formed.

After depositing amorphous silicon (a-Si: H) on the buffer layer 202, a dehydrogenation process and a crystallization process using heat are performed to form and pattern a polycrystalline silicon layer to form an active layer 204. .

The active layer 204 defines a first active region 204a and both sides of the first active region 204a as a second active region 204b.

A gate insulating film 206, which is a second insulating film, is formed on the entire surface of the substrate 200 on which the active layer 204 is formed. The gate insulating layer 206 is formed of one selected from the group of inorganic insulating materials including silicon nitride (SiN _X ) and silicon oxide (SiO ₂ ).

In this case, the gate insulating layer 206 may be left as it is or may be formed by etching the same shape as the gate electrode.

Subsequently, a gate electrode 208 is formed on the gate insulating film 206 on the first active region 204a. The second active region 204b is formed as an ohmic contact region by doping trivalent or tetravalent impurities B or P on the entire surface of the substrate 200 on which the gate electrode 208 is formed.

 An interlayer insulating film 210, which is a third insulating film, is formed on the entire surface of the substrate 200 on which the gate electrode 208 is formed and patterned to form the second active regions 204b defined on both sides of the first active region 204a. The first contact hole 212 and the second contact hole 214 are respectively formed.

The gate electrode 208 is formed of one of a conductive metal group including aluminum (Al), an aluminum alloy, copper (Cu), tungsten (W), tantalum (Ta), and molybdenum (Mo), and the interlayer insulating film 210 Is selected from the group of insulating materials as described above.

As shown in FIG. 6B, a second metal layer is formed on the entire surface of the substrate 200 on which the interlayer insulating layer 210 is formed, and then patterned to form a source electrode contacting each of the exposed second active regions 204b. 216 and the drain electrode 218 are formed.

Subsequently, benzocyclobutene (BCB) and acrylic resin (resin) selected from the above-mentioned inorganic insulating material group on the front surface of the substrate 200 on which the source and drain electrodes 216 and 218 are formed or in some cases. A protective film 220 which is a fourth insulating film is formed by depositing or applying one selected from the group of organic insulating materials including a fourth insulating film.

Next, the passivation layer 220 is patterned to form a drain contact hole 222 exposing a part of the drain electrode 218 of each driving element T.

As illustrated in FIG. 6C, a conductive metal is deposited and patterned on the entire surface of the substrate 200 on which the passivation layer 220 is formed to form a connection electrode 224 in contact with the drain electrode 218.

Although not shown, the switching element connected to the driving element is formed in the same process as the driving element, and the drain electrode of the switching element is connected to the gate electrode of the driving element.

In the process of forming the gate electrode of the switching device, the gate wiring described with reference to FIG. 4 is formed, and the process of forming the data wiring connected to the source electrode is performed during the process of forming the source and drain electrodes of the switching device. do.)

6A through 6C may be used to form the thin film transistor array unit according to the present invention.

Hereinafter, a manufacturing process of the light emitting unit bonded to the thin film transistor array unit will be described with reference to FIGS. 7A to 7F.

7A to 7F are cross-sectional views illustrating a manufacturing process of a light emitting unit according to the present invention in order.

As shown in FIG. 7A, a transparent conductive metal having a large work function, such as indium tin oxide (ITO), is deposited on the substrate 300 to form a first electrode 302 which is an anode electrode. .

An insulating film 304 is formed by depositing one selected from the group of inorganic insulating materials including silicon nitride (SiN _x ) and silicon oxide (SiO ₂ ) on the first electrode 302.

Subsequently, a partition layer 306 is formed by applying a material (an organic material such as a resin such as PR) that forms a partition on the insulating film 304.

Next, as shown in FIG. 7B, the barrier rib layer is patterned to form the barrier rib 308 through the photolithography process described above.

In this case, the partition wall 308 shape is formed in a lattice shape different from that used in the passive matrix type described above.

Because each active matrix organic light emitting diode is driven independently for each pixel, the second electrode to be formed later must be configured independently for each pixel.

For this reason, the lattice shape is a preferable shape in which the second electrode can be configured independently for each pixel.

Next, as shown in FIG. 7C, the lower insulating film exposed between the partition walls 308 is etched by a predetermined method to form an insulating film pattern 305 having the same planar shape as the partition walls 308 under the partition walls 308. To form.

In this case, the planar width of the barrier rib 308 should be smaller than the planar width of the insulating film pattern 305. If the width of the barrier rib 308 is larger than the width of the insulating film pattern 305, a defect in contact between the first electrode 302 and the second electrode may occur in a process of depositing a second electrode.

Therefore, as shown in FIG. 7D, the process of making the partition 308 smaller is required.

In this case, it is important to prevent the lower insulating pattern from being affected during the process of etching the barrier rib 308. For this purpose, the barrier rib 308 is etched by using a plasma etching method.

Since the plasma etching method isotropically etched and hardly affects the lower insulating film, which is an inorganic film, the lower insulating film pattern 305 remains and only the partition wall 308 is scraped off while maintaining its shape.

Therefore, as shown in Fig. 7E (simultaneously showing a plan view and a cross-sectional view showing only a part thereof), the matrix-shaped partition wall 308 and the insulating film pattern 305 thereunder can be produced by a single mask process.

Next, as illustrated in FIG. 7F, light of red (R), green (G), and blue (B) is positioned on the first electrode 302 between the partitions 308 corresponding to each pixel part. An organic emission layer 310 emitting light is formed.

In this case, the organic light emitting layer 310 may be configured as a single layer or a multilayer. When the organic light emitting layer is formed as a multilayer, a hole transporting layer 310c and an electron transporting layer are formed in the light emitting layer 310a. Layer: ETL (310b) is further configured.

Next, a process of depositing the second electrode 312 on the light emitting layer 310 is performed.

At this time, since the partition 308 is formed in an inverted trapezoidal shape in cross section, metal layers cannot be deposited on both surfaces of the partition 308.

Therefore, the metal layer for forming the second electrode 312 is present only on the upper portion of the organic light emitting layer 310 existing between the upper portion of the barrier rib 308 and the barrier rib, and is formed independently for each pixel region P. FIG. .

In this case, the lower insulating layer pattern 305 prevents the second electrode 312 from contacting the lower first electrode 302.

The material forming the second electrode 312 may be formed of one selected from aluminum (Al), calcium (Ca), and magnesium (Mg) or a double metal layer of lithium fluorine / aluminum (LIF / Al).

As described above, a separate second substrate on which the light emitting part is formed may be formed.

As shown in FIG. 5, the thin film transistor array unit and the substrate including the light emitting unit manufactured as described above may be bonded to each other to manufacture the top emission organic light emitting diode according to the present invention.

In the organic light emitting device according to the present invention, since the barrier layer and the insulating layer pattern at the bottom may be formed in one single process, the organic EL device according to the present invention may reduce the process time and reduce the cost due to the process simplification.

In addition, the active matrix organic light emitting device according to the second embodiment First, since the upper emission type is not affected by the shape of the lower array pattern, it is possible to secure a high aperture ratio.

In addition, since the thin film transistor can be freely disposed in the pixel area of the lower plate, the degree of freedom can be obtained.

In addition, it is possible to solve the problem that the outside air could not be blocked by the conventional top emission type thin film protective film.

Second, since the organic electroluminescent layer is not configured on the thin film transistor array pattern but separately configured, the organic light emitting layer does not have to consider the effects on the thin film transistor during the process, thereby improving yield.

In addition, after the process of the thin film transistor array unit is completed, it can be inspected to select a good bottom plate, and the light emitting unit can also be selected by joining a good top plate. Can be represented.

1 is a cross-sectional view schematically showing a conventional passive matrix organic electroluminescent device,

2A to 2E are process cross-sectional views showing a manufacturing process of a conventional passive matrix organic light emitting device according to a process sequence;

3A to 3E are cross-sectional views illustrating a manufacturing process of a passive matrix organic light emitting device according to a first embodiment of the present invention in a process sequence;

4 is an equivalent circuit diagram of an active matrix organic light emitting diode,

5 is a cross-sectional view schematically showing the configuration of an active matrix organic light emitting diode according to a second embodiment of the present invention;

6A through 6C are cross-sectional views illustrating a manufacturing process of a thin film transistor array unit in the configuration of FIG. 5 according to a process sequence;

7A to 7F are cross-sectional views illustrating a manufacturing process of the organic light emitting unit in the configuration of FIG. 5 according to a process sequence.

<Brief description of the main parts of the drawing>

100 substrate 102 first electrode (anode electrode)

105: insulating film pattern 108: partition wall

Claims (15)

Forming a transparent first electrode on the substrate; Stacking an insulating film and a barrier layer on the first electrode; Patterning the partition layer by a photolithography process to form a partition wall; Removing the insulating film exposed between the partition walls to form an insulating film pattern having the same planar shape as the partition wall under the partition wall; Etching the partition wall while maintaining the shape of the partition wall so that the planar width of the partition wall is smaller than the width of the insulating film pattern; Forming an organic light emitting layer on the first electrode exposed between the barrier ribs; Forming a second electrode on the organic light emitting layer Organic electroluminescent device manufacturing method comprising a. The method of claim 1, The first electrode is an anode electrode (hole electrode) for injecting a hole in the light emitting layer, the second electrode is a cathode electrode (cathode electrode) for injecting electrons into the light emitting layer (cathode electrode) manufacturing method. The method of claim 1, The first electrode is an indium tin oxide (ITO) manufacturing method of an organic light emitting device. The method of claim 1, The second electrode may be formed of one selected from metals including calcium (Ca), aluminum (Al), and magnesium (Mg), or an organic light emitting diode formed of a double metal layer of lithium fluorine / aluminum (LIF / Al). Way. The method of claim 1, The partition wall is a planar, an organic light emitting device manufacturing method of the shape spaced apart from each other extending in one direction. The method of claim 1, The barrier rib is etched by an etching method having an isotropic organic light emitting device manufacturing method. The method of claim 6, The etching method is an organic electroluminescent device manufacturing method of the plasma etching method. The method of claim 1, The partition layer is an organic electroluminescent device manufacturing method formed of a photoresist. Preparing a first substrate and a second substrate; Defining a plurality of pixels on the first substrate and the second substrate; Forming a switching element and a driving element connected thereto for each pixel of the first substrate; Forming a connection electrode in contact with the driving element and configured independently for each pixel; Forming a transparent first electrode on a front surface of the second substrate; Forming an insulating film on the first electrode; Forming a barrier layer on the insulating layer; Patterning the barrier rib layer by a photolithography process to form a grid-shaped barrier rib including transmission holes in a portion corresponding to the pixel portion; Etching the insulating film exposed between the partition walls to form a pattern of the insulating film overlapping planarly with the same shape as the partition wall; Etching the partition wall while maintaining the shape of the partition wall so that the planar width of the partition wall is smaller than the width of the insulating layer pattern; Forming a light emitting layer on an upper portion of the first electrode exposed through the through hole of the partition wall; Forming a second electrode on the emission layer to be configured independently for each pixel area; Bonding the first substrate to the second substrate such that the connection electrode of the first substrate contacts the second electrode; Organic electroluminescent device manufacturing method comprising a. The method of claim 9, The first electrode is an anode electrode (hole electrode) for injecting a hole in the light emitting layer, the second electrode is a cathode electrode (cathode electrode) for injecting electrons into the light emitting layer (cathode electrode) manufacturing method. The method of claim 9, The first electrode is an indium tin oxide (ITO) manufacturing method of an organic light emitting device. The method of claim 9, The second electrode may be formed of one selected from metals including calcium (Ca), aluminum (Al), and magnesium (Mg), or an organic light emitting diode formed of a double metal layer of lithium fluorine / aluminum (LIF / Al). Way. The method of claim 9, The barrier rib is etched by an etching method having an isotropic organic light emitting device manufacturing method. The method of claim 13, The etching method is an organic electroluminescent device manufacturing method of the plasma etching method. The method of claim 13, The material for forming the barrier rib is a photoresist.