KR100363846B1 - Method for removing photoresist in semiconductor device - Google Patents
Method for removing photoresist in semiconductor device Download PDFInfo
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- KR100363846B1 KR100363846B1 KR1019950055142A KR19950055142A KR100363846B1 KR 100363846 B1 KR100363846 B1 KR 100363846B1 KR 1019950055142 A KR1019950055142 A KR 1019950055142A KR 19950055142 A KR19950055142 A KR 19950055142A KR 100363846 B1 KR100363846 B1 KR 100363846B1
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- Prior art keywords
- photosensitive film
- silicon substrate
- semiconductor device
- lamp
- ozone
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- 238000000034 method Methods 0.000 title claims abstract description 27
- 239000004065 semiconductor Substances 0.000 title claims abstract description 17
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 48
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 48
- 239000010703 silicon Substances 0.000 claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 48
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 25
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 11
- 239000001301 oxygen Substances 0.000 claims abstract description 11
- 125000004430 oxygen atom Chemical group O* 0.000 claims abstract description 10
- 239000010453 quartz Substances 0.000 claims abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000010438 heat treatment Methods 0.000 claims description 9
- 238000004140 cleaning Methods 0.000 abstract description 3
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
본 발명은 반도체소자의 감광막 제거방법에 관한 것으로 특히, 오존에 UV빛을 방출하는 램프에 의해 상기 오존을 분해하여 감광막을 제거하는 반도체소자의 감광막 제거방법에 관한 것이다.The present invention relates to a method of removing a photosensitive film of a semiconductor device, and more particularly, to a method of removing a photosensitive film of a semiconductor device by decomposing the ozone by a lamp that emits UV light to ozone.
일반적으로 반도체 소자의 특정부분을 제거하기 위하여 감광막을 주로 사용하며, 상기 감광막을 제거하기 위해서는 O2플라즈마를 이용하고 있다. 그러면 종래 반도체 소자의 감광막 제거방법을 설명하면 다음과 같다.Generally, a photoresist film is mainly used to remove a specific portion of a semiconductor device, and an O 2 plasma is used to remove the photoresist film. The photosensitive film removal method of the conventional semiconductor device will now be described.
제 1 도는 감광막이 형성된 실리콘기판에 열을 가한 상태의 단면도이다.1 is a cross-sectional view of a state in which heat is applied to a silicon substrate on which a photosensitive film is formed.
감광막(3) 제거방법중 오존을 이용한 방법으로써, 오존발생기에서 만들어진 오존이 상기 감광막(3)상에서 산소(O2)와 산소원자(O)로 분해되고, 상기 분해된 산소원자(O)가 상기 감광막(3)을 제거하는 원리이다. 상기 방법으로 오존을 분해하기 위해서는 일정한 온도가 필요하며 이를위해서 상기 실리콘기판(2)의 하부에는 핫 플레이트(1)를 설치하여 200 내지 400℃의 온도로 상기 실리콘기판(2)을 가열한다. 이때 상기 실리콘기판(2)상에 형성된 상기 감광막(3) 내에는 높은 온도로 인하여 기포(4)가 발생한다. 상기 기포(4)는 상기 감광막(3)의 성질을 변형시키기 때문에 상기 감광막(3)은 제거되기 어렵고, 화학용액을 사용한 추가의 세정공정이 필요하다는 문제점이 있다.As a method using ozone in the photosensitive film (3) removal method, ozone produced in the ozone generator is decomposed into oxygen (O 2 ) and oxygen atom (O) on the photosensitive film (3), and the decomposed oxygen atom (O) is It is a principle to remove the photosensitive film (3). In order to decompose ozone by the above method, a certain temperature is required. To this end, a hot plate 1 is installed below the silicon substrate 2 to heat the silicon substrate 2 to a temperature of 200 to 400 ° C. At this time, bubbles 4 are generated in the photosensitive film 3 formed on the silicon substrate 2 due to the high temperature. Since the bubble 4 deforms the property of the photosensitive film 3, the photosensitive film 3 is difficult to remove and there is a problem that an additional cleaning step using a chemical solution is required.
따라서 본 발명은 실리콘기판의 하부에 설치된 플레이트를 이용하여 감광막을 활성화하고, 상기 실리콘기판의 상부에 설치된 램프를 이용하여 오존을 분해한 후 상기 분해된 오존을 이용하여 상기 감광막을 제거하므로써Therefore, in the present invention, the photosensitive film is activated by using a plate installed under the silicon substrate, the ozone is decomposed using a lamp installed on the silicon substrate, and then the photosensitive film is removed using the decomposed ozone.
상기한 단점을 해소할 수 있는 반도체 소자의 감광막 제거방법을 제공하는데 그 목적이 있다.It is an object of the present invention to provide a method of removing a photoresist film of a semiconductor device that can solve the above disadvantages.
상기한 목적을 달성하기 위한 본 발명은 플레이트에 의하여 실리콘기판을 가열하여 상기 실리콘기판상에 형성된 감광막을 활성화 하는 단계와, 상기 단계로부터 상기 실리콘기판의 상부에 설치된 석영창을 통하여 램프로부터 발생된 빛을 통과시켜서 상기 실리콘기판상에 형성된 감광막의 표면에서 오존을 분해시키는 단계와, 상기 단계로부터 상기 오존으로부터 분해된 산소 및 산소원자에 의해 상기 실리콘기판상에 형성된 감광막을 제거하는 단계로 이루어지는 것을 특징으로 한다.The present invention for achieving the above object is a step of activating the photosensitive film formed on the silicon substrate by heating the silicon substrate by the plate, and the light generated from the lamp through the quartz window installed on the silicon substrate from the step Passing ozone to decompose ozone on the surface of the photosensitive film formed on the silicon substrate, and removing the photosensitive film formed on the silicon substrate by oxygen and oxygen atoms decomposed from the ozone from the step. do.
또한 본 발명은 상기 실리콘기판의 하부에 설치된 하부플레이트로 상기 실리콘기판을 가열하여 상기 실리콘기판상에 형성된 감광막을 활성화 하는 단계와, 상기 단계로부터 상기 실리콘기판의 상부에 설치된 상부플레이트로 상기 실리콘기판상에 형성된 감광막을 가열하여 오존을 분해하는 단계와, 상기 단계로부터 상기 오존으로부터 분해된 산소 및 산소원자에 의해 상기 실리콘기판에 형성된 감광막을 제거하는 단계로 이루어지는 것을 특징으로 한다.In another aspect, the present invention is to activate the photosensitive film formed on the silicon substrate by heating the silicon substrate with a lower plate installed on the lower portion of the silicon substrate, and from the step to the upper plate installed on the silicon substrate on the silicon substrate Heating the photosensitive film formed in the step of decomposing ozone, and removing the photosensitive film formed on the silicon substrate by oxygen and oxygen atoms decomposed from the ozone from the step.
이하, 첨부된 도면을 참조하여 본 발명을 상세히 설명하기로 한다.Hereinafter, with reference to the accompanying drawings will be described in detail the present invention.
제 2 도는 본 발명에 따른 감광막을 제거하기 위한 챔버를 도시한 장치도이며, 제 3 내지 5도는 본 발명에 따른 반도체소자의 감광막 제거방법을 설명하기 위한 그래프도이다.2 is an apparatus diagram showing a chamber for removing the photosensitive film according to the present invention, and FIGS. 3 to 5 are graphs for explaining the method of removing the photosensitive film of the semiconductor device according to the present invention.
제 2 도는 실리콘기판(12)상의 감광막을 제거하기 위한 챔버를 도시한 장치도로서, 상기 플레이트(11)에 의하여 상기 실리콘기판(12)을 100 내지 150℃의 온도를 가열하여 상기 감광막이 산화될 수 있는 활성화 에너지를 공급해 준다. 그리고, 상기 실리콘기판(12)의 상부에 설치된 석영창(15)을 통하여 상기 밀폐된 공간내에 설치된 광원(16)으로부터 발생된 빛중에 UV빛만 통과시켜서 상기실리콘기판(12)상에 형성된 감광막의 표면에서 오존(O3)을 분해시킨다. 상기 플레이트(11) 및 석영창(15)의 공극은 3 내지 5nm로 유지하여 상기 실리콘기판(12)상에 형성된 감광막의 반응을 극대화함과 함께 상기 UV빛에 의해 선택적으로 가열된 감광막상에서는 하기 <식 1>에 나타낸 반응이 튜브내에서 이루어진다.2 is a device diagram showing a chamber for removing a photoresist film on the silicon substrate 12. The silicon substrate 12 is heated by a temperature of 100 to 150 ° C. by the plate 11 to oxidize the photoresist film. Supply the activation energy. The surface of the photosensitive film formed on the silicon substrate 12 by passing only UV light through the light generated from the light source 16 installed in the closed space through the quartz window 15 provided on the silicon substrate 12. Decomposes ozone (O 3 ) The pores of the plate 11 and the quartz window 15 are maintained at 3 to 5 nm to maximize the reaction of the photoresist film formed on the silicon substrate 12 and on the photoresist film selectively heated by UV light. The reaction shown in equation 1 takes place in the tube.
<식 1><Equation 1>
상기 <식 1>에서 알수 있는 바와같이 상기 오존(O3)은 상기 UV빛에 의해 분해되어 산소(O2) 및 산소원자(O)로 되고, 상기 산소(O2)에 의해 상기 실리콘기판(12)상에 형성된 감광막을 제거한다. 상기 램프(16)의 에너지는 50 내지 400W이고, 감광막의 온도는 250 내지 350℃로 하여 오존의 분해를 촉진시킨다.As can be seen in Equation 1, the ozone (O 3 ) is decomposed by the UV light to form oxygen (O 2 ) and oxygen atoms (O), and the silicon substrate (O 2 ) by the oxygen (O 2 ). 12) Remove the photosensitive film formed on. The energy of the lamp 16 is 50 to 400 W, and the temperature of the photosensitive film is 250 to 350 ° C. to promote the decomposition of ozone.
제 3 도는 빛의 파장에 대하여 레진흡수율을 도시한 그래프도로서, 상기 램프(16)에 의해 발생된 빛은 250 내지 350nm의 파장에서 레진흡수율이 제일높기 때문에 상기 250 내지 350nm파장의 빛을 방출하는 램프를 사용한다.3 is a graph showing the resin absorption rate with respect to the wavelength of light, and since the light generated by the lamp 16 has the highest resin absorption rate at a wavelength of 250 to 350 nm, it emits light having the wavelength of 250 to 350 nm. Use a lamp.
제 4 도는 상기 램프(16)에 의해 상기 실리콘기판(12)에 형성된 감광막에 열을 가할때 시간에 대한 램프의 열에너지를 도시한 그래프도로서, 처음에는 낮은 에너지를 상기 감광막에 가하고, 시간이 지남에 따라 온도를 증가하여 주므로써 상기 감광막의 열화현상을 방지하고, 온도를 증가함에 따라 반응을 활성화 시킨다.4 is a graph showing the thermal energy of a lamp with respect to time when heat is applied to the photosensitive film formed on the silicon substrate 12 by the lamp 16. Initially, low energy is applied to the photosensitive film, and over time. By increasing the temperature according to the degradation of the photosensitive film is prevented, and the reaction is activated by increasing the temperature.
제 5 도는 상기 램프(16)에서 방출되는 전력을 시간에 대하여 도시한 그래프도로서, 상기 전력공급은 펄스폭 변조(Pulse Width Modulation)방식을 이용하면, 상기 감광막에 가하는 열의 증감이 매우 쉽게 된다.5 is a graph showing the power emitted from the lamp 16 with respect to time. When the power supply uses a pulse width modulation method, it is very easy to increase or decrease the heat applied to the photosensitive film.
본 실시예에서는 실리콘기판(12)의 하부에 설치된 플레이트(11)에 의해서 상기 실리콘기판(12)상에 형성된 감광막을 활성화시키고, 상기 램프(16)에서 방출되는 UV빛에 의해 감광막의 표면을 250내지 350℃의 온도로 높여 오존(O3)을 산소(O2) 및 산소원자(O)로 분해하여 감광막을 제거하였으나, 이것에 한정되는 것은 아니며 다른 실시예로서 설명하면 다음과 같다.In the present embodiment, the photosensitive film formed on the silicon substrate 12 is activated by the plate 11 disposed below the silicon substrate 12, and the surface of the photosensitive film is 250 by the UV light emitted from the lamp 16. The photosensitive film was removed by decomposing ozone (O 3 ) into oxygen (O 2 ) and oxygen atoms (O) by raising the temperature to 350 ° C., but the present invention is not limited thereto.
상기 실리콘기판(12)의 하부에 설치된 하부플레이트에 의해 상기 실리콘기판(12)을 100 내지 150℃의 온도로 가열하므로써 상기 실리콘기판(12)상에 형성된 감광막을 활성화 시키고, 상기 실리콘기판(12)의 상부에 설치된 상부플레이트에 의해 200 내지 350℃의 온도로 가열하여 상기 실리콘기판(12)상에 형성된 감광막의 표면에 흐르는 오존(O3)을 분해한 후 상기 오존(O3)이 분해되어 발생된 산소(O2) 및 산소원자(O)에 의해 상기 감광막을 제거한다.The photosensitive film formed on the silicon substrate 12 is activated by heating the silicon substrate 12 to a temperature of 100 to 150 ° C. by a lower plate installed under the silicon substrate 12, and the silicon substrate 12 Heated to a temperature of 200 to 350 ℃ by the upper plate installed on the top of the decomposed ozone (O 3 ) flowing on the surface of the photosensitive film formed on the silicon substrate 12, the ozone (O 3 ) is generated by decomposition The photosensitive film is removed by the prepared oxygen (O 2 ) and oxygen atom (O).
상술한 바와같이 실리콘기판의 하부에 설치된 플레이트를 이용하여 상기 실리콘기판상에 형성된 감광막을 활성화 시키고, 상기 실리콘기판의 상부에 설치된 램프를 이용하여 상기 실리콘기판상에 형성된 감광막의 표면에서 오존을 분해하도록 하여 상기 감광막을 제거하므로써, 세정공정을 생략할 수 있으므로 공정의 단순화로 인한 소자의 수율을 향상시킬 수 있는 탁월한 효과가 있는 것이다.As described above, the photosensitive film formed on the silicon substrate is activated by using a plate installed under the silicon substrate, and the ozone is decomposed on the surface of the photosensitive film formed on the silicon substrate by using a lamp installed on the silicon substrate. Therefore, since the cleaning process can be omitted by removing the photosensitive film, there is an excellent effect of improving the yield of the device due to the simplification of the process.
제 1 도는 종래 반도체 소자의 감광막 제거방법을 설명하기 위한 반도체 소자의 단면도.1 is a cross-sectional view of a semiconductor device for explaining a method of removing a photosensitive film of a conventional semiconductor device.
제 2 도는 본 발명에 따른 감광막을 제거하기 위한 챔버를 도시한 장치도.2 is a device diagram showing a chamber for removing the photosensitive film according to the present invention.
제 3 내지 5 도는 본 발명에 따른 반도체소자의 감광막 제거방법을 설명하기 위한 그래프도.3 to 5 are graphs for explaining the method of removing the photosensitive film of the semiconductor device according to the present invention.
* 도면의 주요부분에 대한 부호설명 ** Explanation of Signs of Major Parts of Drawings *
11 : 플레이트 12 : 실리콘기판11 plate 12 silicon substrate
15 : 석영창 16 : 램프15 quartz window 16 lamp
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| KR1019950055142A KR100363846B1 (en) | 1995-12-23 | 1995-12-23 | Method for removing photoresist in semiconductor device |
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| KR1019950055142A KR100363846B1 (en) | 1995-12-23 | 1995-12-23 | Method for removing photoresist in semiconductor device |
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| WO2011155985A2 (en) * | 2010-06-09 | 2011-12-15 | Lam Research Corporation | Ozone plenum as uv shutter or tunable uv filter for cleaning semiconductor substrates |
| US8584612B2 (en) | 2009-12-17 | 2013-11-19 | Lam Research Corporation | UV lamp assembly of degas chamber having rotary shutters |
| US8603292B2 (en) | 2009-10-28 | 2013-12-10 | Lam Research Corporation | Quartz window for a degas chamber |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020064028A (en) * | 2001-01-31 | 2002-08-07 | 한빛 세마텍(주) | Cleaning and surface treatment equipment by pulsed ultra-violet light radiation |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR880002238A (en) * | 1986-07-25 | 1988-04-29 | 도오교오 에레구토론 가부시끼가이샤 | Ashing method |
-
1995
- 1995-12-23 KR KR1019950055142A patent/KR100363846B1/en not_active IP Right Cessation
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR880002238A (en) * | 1986-07-25 | 1988-04-29 | 도오교오 에레구토론 가부시끼가이샤 | Ashing method |
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| US8603292B2 (en) | 2009-10-28 | 2013-12-10 | Lam Research Corporation | Quartz window for a degas chamber |
| US8584612B2 (en) | 2009-12-17 | 2013-11-19 | Lam Research Corporation | UV lamp assembly of degas chamber having rotary shutters |
| WO2011155985A2 (en) * | 2010-06-09 | 2011-12-15 | Lam Research Corporation | Ozone plenum as uv shutter or tunable uv filter for cleaning semiconductor substrates |
| WO2011155985A3 (en) * | 2010-06-09 | 2012-04-19 | Lam Research Corporation | Ozone plenum as uv shutter or tunable uv filter for cleaning semiconductor substrates |
| CN102934199A (en) * | 2010-06-09 | 2013-02-13 | 朗姆研究公司 | Ozone plenum as uv shutter or tunable uv filter for cleaning semiconductor substrates |
| US8492736B2 (en) | 2010-06-09 | 2013-07-23 | Lam Research Corporation | Ozone plenum as UV shutter or tunable UV filter for cleaning semiconductor substrates |
| US8624210B2 (en) | 2010-06-09 | 2014-01-07 | Lam Research Corporation | Ozone plenum as UV shutter or tunable UV filter for cleaning semiconductor substrates |
Also Published As
| Publication number | Publication date |
|---|---|
| KR970052663A (en) | 1997-07-29 |
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