KR100356965B1 - Atomic thin layer deposition appratus - Google Patents

Abstract

An atomic layer thin film deposition apparatus is disclosed. The disclosed deposition apparatus includes: a vacuum vessel provided with an exhaust port at one side; A reaction vessel provided in the vacuum vessel, the introduction vessel into which two or more kinds of reaction gases from outside the vacuum vessel are introduced, and one reaction chamber into which the reaction gases from the introduction portion are introduced; The introduction sections are partitioned by gas, each introduction section is provided with diffusion means for diffusing the introduced reaction gas in stages, and the reaction chamber is connected to each of the introduction sections.

The tunnel-shaped reaction chamber can be made in a vacuum vessel, and when two or more kinds of reaction raw materials are sequentially injected therein for a predetermined time, the spatial distribution of the injected raw material gases can be uniformed to improve the uniformity of the deposited thin film. By minimizing the space of the chamber and minimizing the use of the reaction raw material gas and the purge gas, the injection time of the gas can be shortened, thereby reducing the time required for the process.

Description

Atomic Thin Film Deposition Apparatus

The present invention relates to an atomic layer thin film deposition apparatus, and in detail, to each of the reaction raw material gas, an atomic layer thin film capable of preventing residual gas during the turbulence or exhaust in the gas supply pipe and inducing a uniform flow of gas on the substrate. It relates to a vapor deposition apparatus.

In general, in the manufacture of semiconductor devices or the manufacture of flat panel displays, thin films required for wafers or glass substrates are deposited, and sputtering or chemical vapor deposition is mainly used.

In the chemical vapor deposition method, a gaseous raw material is mixed and uniformly sprayed onto a substrate to deposit a thin film by chemical reaction on the substrate. As devices such as semiconductors require higher integration, deposition of a thin film with a fine line width is an essential requirement.

In general, the atomic layer thin film deposition apparatus crosses the gases of the reaction raw materials at regular time intervals and periodically flows them into the reaction tube, whereby the material is grown in such a manner that one atomic layer is sequentially grown in each reaction step.

Such an atomic layer thin film growth apparatus includes a shower head method for uniformly injecting and depositing gas onto a substrate and a traveling wave method that is ejected from one end of the substrate and exhausted to the other end of the substrate.

In the shower head method or the traveling wave method, inducing a uniform flow of gas on the substrate may be an essential condition for uniform deposition of a thin film.

In the atomic layer deposition method, two or more kinds of raw materials are alternately flowed onto the substrate. In the conventional traveling wave method, a gas injection is performed to uniformly flow gas onto the substrate for a short pulse time and to remove residual gas. Due to the difficulty in designing the part, gas is not sufficiently exhausted during the actual process and the gas supply pipe is not exhausted, so that a chemical reaction occurs in the gas supply pipe, which makes it difficult to deposit a uniform thin film or cause contaminant particles.

The present invention was devised to solve the above problems of the prior art, and in particular, each of the reaction raw material gases can be prevented from remaining during turbulence or exhaust in the gas supply pipe and induce a uniform flow of gas on the substrate. An object of the present invention is to provide an atomic layer thin film deposition apparatus having a reaction chamber.

1 is a cross-sectional view showing a schematic structure of an embodiment according to the atomic layer deposition apparatus of the present invention.

FIG. 2 is an enlarged view of a portion A of the atomic layer thin film deposition apparatus illustrated in FIG. 1, and is a cross-sectional view illustrating a gas distribution structure for an upper introduction portion of a reaction gas.

3 is an enlarged view of a portion A of the atomic layer deposition apparatus illustrated in FIG. 1, and is a cross-sectional view illustrating a gas distribution structure of a lower introduction portion of a reaction gas.

4 is a plan view of a first reaction plate of the atomic layer thin film deposition apparatus of the present invention.

FIG. 5 is a sectional view taken along the line AA ′ of FIG. 4, showing an enlarged portion of the gas expanding part. FIG.

6 is an enlarged cross-sectional view taken along line B-A 'of FIG.

7 is a plan view of a second reaction plate of the atomic layer thin film deposition apparatus of the present invention.

FIG. 8 is an enlarged sectional view taken along the line C-C 'of FIG.

FIG. 9 is a sectional view taken along a line D-C 'of FIG. 7 and shows an enlarged view of a gas expanding part.

In order to achieve the above object, the atomic layer deposition apparatus according to the present invention is:

A vacuum container provided with an exhaust port at one side;

A reaction vessel provided in the vacuum vessel, the introduction vessel into which two or more kinds of reaction gases from outside the vacuum vessel are introduced, and one reaction chamber into which the reaction gases from the introduction portion are introduced; In the atomic layer deposition apparatus provided,

The introduction sections are partitioned by gas, and each introduction section is provided with diffusion means for diffusing the introduced reaction gas in stages, and the reaction chamber is connected to each of the introduction sections.

In the atomic layer deposition apparatus of the present invention, the reaction vessel is provided with two reaction plates, the introduction portion and the reaction chamber is provided by a channel of a predetermined depth formed on the corresponding inner surface of the reaction plate, the introduction portion Preferably, the diffusion means is provided in front of a channel of each of the reaction plates, and a separation plate is provided between the reaction plates on which the diffusion means is provided to prevent mixing of the reaction gas introduced into the reaction plates. .

The diffusion means provided at the front of the channel is provided by a diffusion portion having a plurality of islands arranged at predetermined intervals on a traveling path of the reaction gas and having a gas passage area of a predetermined area therebetween. It is preferable.

A plurality of diffusion parts of the diffusion means are provided at predetermined intervals in the gas advancing direction, and the total area of the gas passage area of the diffusion part adjacent to the gas outflow side is larger than that of the diffusion part located on the gas inflow side. It is desirable to have a value.

In addition, the number of islands of the diffusion part provided on the gas inlet side is larger than the number of islands of the diffusion part provided on the gas outlet side, and the size of the islands of the diffusion part provided on the gas inlet side is diffused provided on the gas outlet side. It is desirable to have a relatively large size compared to the negative island.

The diffusion means has two diffusion portions maintaining a predetermined interval, the first diffusion portion on the gas inlet side has a plurality of substantially triangular islands, the long side of each island is aligned in a direction perpendicular to the gas flow direction, the gas The second diffusion portion on the outflow side has an approximately rectangular island having two long sides in parallel, and preferably each side of the two long sides is arranged side by side in the gas flow direction.

Hereinafter, a preferred embodiment of an atomic layer thin film deposition apparatus according to the present invention will be described with reference to the accompanying drawings.

In the atomic layer deposition apparatus according to the present invention, the first reaction raw material gas is injected into the reaction chamber for a predetermined time, the reaction chamber is purged using pumping or inert gas for a predetermined time, and the second reaction raw material gas is injected for a predetermined time. After repeating the pumping or purging again using an inert gas is a device for depositing a thin film of a desired thickness on a wafer or a glass substrate.

1 shows a schematic structure of a reaction chamber of an atomic layer deposition apparatus according to the present invention. FIGS. 2 and 3 are enlarged views of a portion A of the atomic layer deposition apparatus shown in FIG. 1, and FIG. 3 is a cross-sectional view showing a gas distribution structure for the introduction portions (311a, 321a), Figure 3 is a cross-sectional view showing a gas distribution structure for the lower introduction portions (311b, 321b).

1 to 3, a reaction vessel 3 is provided in a vacuum vessel 1 provided with an exhaust port 2 on one side. The reaction vessel 3 is supplied with two kinds of reaction gases (Source A, Source B) from the outside of the vacuum vessel (1).

In the present embodiment, the reaction vessel 3 is provided with three reaction plates 31, 32, 33. On each inner surface of the first, second, third reaction plates 31, 32, 33, gas introduction parts 311, 321 on the upstream side into which two kinds of gases are introduced therebetween, and spatially connected thereto As a result, a channel for providing the reaction chambers 312 and 322 on the downstream side where the wafer W is mounted is formed. Each of the gas introduction parts 311 and 321 includes upper introduction parts 311a and 321a and lower introduction parts 311b and 321b. Separation plates 35a and 35b are provided between the upper gas introduction parts 311a and 321a and the lower introduction parts 311b and 321b of the gas introduction parts 311 and 321 to spatially isolate them. The upper separation plates 35 and 36 extend from the introduction portions 311 and 321 to the front ends of the reaction chambers 312 and 322. Accordingly, as shown in FIG. 1, the first reaction gas Source A is introduced into the upper gas introducing parts 311a and 321a separated by the separating plates 35a and 35b as described above, and the lower inlet parts 311b and 321b are provided. The second reaction gas (Source B) is introduced into the reaction mixture, and mixed in the reaction chambers 312 and 322 in which the wafer W is located. In front of the reaction vessel 3 is provided with a reaction gas distributor 34 for supplying the reaction gas to each of the introduction portion (311, 321). In addition, an upper heater 36a and a lower heater 36b are provided on the upper surface of the first reaction plate 31 and the bottom of the third reaction plate 33, respectively.

4 is a plan view showing a structure of a channel formed on an inner surface of the first reaction plate, FIG. 5 is a cross-sectional view taken along the line AA ′ of FIG. 4, and FIG. 6 is a cross-sectional view taken along the line AA ′ of FIG. 4.

A 'c' shaped wall 313 having one side open at an edge portion of the first reaction plate 31 is provided. A stepped portion 314 is formed on the inner edge portion of the wall adjacent to the upper introduction portion 311a to which the edge portion of the separator plate 35a is seated. A reaction chamber 312 in which the wafer W is mounted is formed adjacent to the open portion of the wall 313. An upper introduction portion 311a, which is an element of the reaction gas introduction portion 311 adjacent to the step portion 314, is formed. Between the upper introduction portion 311a and the reaction chamber 312 is provided with a reaction gas diffusion portion 316 characterizing the present invention. The diffusion portion 316 is formed by a first diffusion portion formed by a plurality of substantially triangular islands 316a arranged in a line, and a plurality of substantially rectangular islands 316b arranged side by side in parallel with the first diffusion portion. A second diffusion part is provided. Top surfaces of the triangular and square islands 316a and 316b are in contact with one side of the separator plate 34 supported by the step portion 314. Therefore, the reaction gas introduced into the upper introduction portion 311a is diffused while flowing through the gap between the islands 316a and 316b. According to the present embodiment, four triangular islands 316a of the first diffusion part are provided, and about 20 rectangular islands 316b of the second diffusion part are provided, and a gap is provided between the triangular islands 316a. That is, it is smaller than the area of the entire gas passage area provided between the rectangular islands 316b than the area of the entire gas passage area between the triangular islands 316a through which gas passes. In particular, the long sides of the triangular islands 316a are aligned in a direction perpendicular to the gas inflow direction, so that the area of the gas passage region provided between the triangular islands 316a gradually expands in the gas traveling direction. The long sides of each of the square islands 316b are parallel to each other, and are arranged side by side in the gas traveling direction. Accordingly, the reaction gas introduced into the gap between the triangular islands 316a of the first diffusion part passes through a gas passage region having a gradually expanding area, that is, a gradually expanding area, and the first diffusion part and the second diffusion part. Into the spaces 36 therebetween are spread evenly throughout. The reaction gas evenly distributed in the space 36 is introduced into the reaction chamber 312 again between the rectangular islands 316b forming the second diffusion portion.

A reaction gas inlet hole 317 is formed in a portion of the wall 313 adjacent to the upper introduction portion 311a. Referring to FIG. 5, which is a cross-sectional view taken along the line AA ′ of FIG. 4, the bottom surface of the upper gas introducing portion 311a increases toward the gas diffusion portion. Referring to FIG. 5, which is a cross-sectional view taken along line B-A 'of FIG. 4, a triangular island of the first diffusion portion is formed on an inclined bottom surface of the gas introduction portion 311a and a square island 316b of the second diffusion portion. Is formed on a flat surface positioned at the end of the gas introduction portion 311a.

FIG. 7 is a plan view of the second reaction plate 32, FIG. 8 is a cross-sectional view taken along the line CC ′ of FIG. 7, and FIG. 9 is a cross-sectional view taken along the line CC ′ of FIG. 7.

7 to 9, the wall 313 of the first reaction plate 31, the stepped portion 314 of the triangular island 316a, and the rectangular island 316b of the first reaction plate 32 are formed on the top surface of the second reaction plate 32. The structural plate corresponds to a wall 323 in which the top surface of the wall 313 of the first reaction plate 313 and the top surface of the first reaction plate 313 and the step 314 of the first reaction plate 313 are separated. A step portion 324 for fixing 35a), a triangular island 326a and a square island 326b constituting the diffusion portion having the function described above are formed.

The lower introduction part 311b corresponding to the upper introduction part 311a of the first reaction plate 31 is formed on the upper surface of the second reaction plate 32. Moreover, the wafer mounting part 312a located in the reaction chamber 312 formed between the 1st reaction plates 31 is provided.

Two reaction gas inlet holes 317a and 317b are provided in a portion of the wall 323 adjacent to the lower introduction portion 311b. The reaction gas inlet holes 317a and 317b are connected to the lower inlet 311b and the upper inlet 321a corresponding to the third reaction plate 33 respectively provided on the upper and lower surfaces of the second reaction plate 32. do.

In the above structure, the gas diffusion and the gas passage region between the islands provided in the first diffusion portion are shifted from each other in a direction perpendicular to the gas flow direction with respect to the gas passage region between the islands provided in the second diffusion portion. Accordingly, the distribution of the reaction gas can be maintained more uniformly.

The channel formed on the bottom surface of the second reaction plate 32 has the same structure as that formed on the inner surface of the first reaction plate 31, and the structure of the channel formed on the inner surface of the third reaction plate 33. Is substantially the same as the structure formed on the upper surface of the second reaction plate (32). Since the structure of the third reaction plate 33 can be sufficiently understood through the structure formed on the upper surface of the second reaction plate 32, it will not be described any further.

In the above embodiment, an atomic layer thin film growth apparatus having a structure in which thin films can be simultaneously grown on two wafers or substrates by three reaction plates is described. However, a structure capable of thin film growth on two or more wafers or substrates, or a thin film growth structure on one wafer or substrate may be easily derived based on the above structure.

In the atomic layer thin film deposition apparatus according to the present invention as described above, it is preferable that the diffusion space is designed to be three times or more than the area of the injection gas pipe so that the gas passing through the reaction gas distributor is sufficiently diffused. It is desirable to have a structure in which the distance between the raw material gas and the island of the first diffusion portion is located farthest, and the distance from the island of the first diffusion portion is gradually closer. At this time, it is preferable that the reaction gas from the gas distributor hits the center of one island of the first diffusion part. That is, the triangular island is uniformly sprayed on the island of the first diffusion portion of the gas distribution sufficiently diffused in the diffusion space, and the raw material gas is sprayed on the substrate by spraying the space distribution evenly among the dense rectangular islands again. do.

The triangular island may have a half moon shape, and the enlarged angle, that is, the injection angle, of the gas passing region therebetween is preferably 90 degrees or more.

The rectangular jet plate is preferably manufactured in a rectangular or elliptical shape, and it is preferable to provide a final gas passing area which is equal to or larger than the area of the gas passing area between the triangular islands.

The atomic layer thin film deposition apparatus of the present invention as described above has a reaction gas diffusion portion that allows the reaction gas to be supplied in an even distribution with respect to the entire surface of the wafer or substrate between the gas introduction portion and the reaction chamber, thereby providing a wafer or a substrate. It is possible to greatly reduce the variation of the local thickness during the growth of the thin film.

As described above, the diffusion of the reaction gas in the even distribution may be more effectively performed by the first diffusion unit by the triangular or semi-stage island and the second diffusion unit by the square or elliptical island.

As described above, the atomic layer thin film deposition apparatus according to the present invention creates a tunnel-shaped reaction chamber in a vacuum vessel, and space distribution of the raw material gas injected when two or more kinds of reaction raw material gases are sequentially injected therein for a predetermined time. The uniformity of the deposited thin film can be improved, and the space required for the reaction chamber can be shortened by minimizing the space of the reaction chamber and minimizing the use of the reaction raw material gas and the purge gas, thereby reducing the time required for the process.

In addition, since the two kinds of reaction raw materials injected into the reaction chamber move along different injection paths, it is possible to reduce the chance of reacting with each other, thereby preventing generation of contaminated particles by reaction in the reaction chamber other than the substrate.

Claims (11)

A vacuum container provided with an exhaust port at one side; A reaction vessel provided in the vacuum vessel, the introduction vessel into which two or more kinds of reaction gases from outside the vacuum vessel are introduced, and one reaction chamber into which the reaction gases from the introduction portion are introduced; In the atomic layer deposition apparatus provided, The introduction section is divided by gas, each introduction section is provided with a diffusion means for diffusing the introduced reaction gas in stages, the reaction chamber is connected to each of the introduction section atomic layer thin film deposition apparatus. The method of claim 1, The reaction vessel includes two reaction plates, and the introduction portion and the reaction chamber are provided by channels having a predetermined depth formed on corresponding inner surfaces of the reaction plates, and in front of the channel of each reaction plate corresponding to the introduction portion. An atomic layer thin film deposition apparatus, characterized in that the diffusion means is provided. The method of claim 2, An atomic layer thin film deposition apparatus, characterized in that the separation plate for preventing the mixing of the reaction gas introduced into each reaction plate between the reaction plate provided with the diffusion means is provided. The method according to any one of claims 1 to 3, The diffusion means provided at the front of the channel is provided by a diffusion part having a plurality of islands arranged at predetermined intervals on a traveling path of the reaction gas and providing a gas passage area of a predetermined area therebetween. Atomic layer thin film deposition apparatus, characterized in that. The method of claim 4, wherein A plurality of diffusion parts of the diffusion means are provided at predetermined intervals in the gas advancing direction, and the total area of the gas passage area of the diffusion part adjacent to the gas outflow side is larger than that of the diffusion part located on the gas inflow side. Atomic layer thin film deposition apparatus having a value. The method of claim 4, wherein The number of islands of the diffusion part provided on the gas inlet side is smaller than the number of islands of the diffusion part provided on the gas inlet side, and the size of the islands of the diffusion part provided on the gas inlet side is the island of the diffusion part provided on the gas outlet side. Atomic layer thin film deposition apparatus, characterized in that having a relatively large size. The method of claim 5, The number of islands of the diffusion part provided on the gas inlet side is smaller than the number of islands of the diffusion part provided on the gas inlet side, and the size of the islands of the diffusion part provided on the gas inlet side is the island of the diffusion part provided on the gas outlet side. Atomic layer thin film deposition apparatus, characterized in that having a relatively large size. The method of claim 4, wherein The diffusion means has two diffusion portions maintaining a predetermined interval, the first diffusion portion on the gas inlet side has a plurality of islands of a substantially triangular or half moon shape, the long side of each island is aligned in a direction perpendicular to the gas flow direction And the second diffusion portion on the gas outlet side has an approximately rectangular or elliptical island having two long sides side by side, and each side of the two long sides is arranged side by side in the gas flow direction. The method according to any one of claims 5 to 7, The diffusion means has two diffusion portions maintaining a predetermined interval, the first diffusion portion on the gas inlet side has a plurality of islands of a substantially triangular or half moon shape, the long side of each island is aligned in a direction perpendicular to the gas flow direction And the second diffusion portion on the gas outlet side has an approximately rectangular or elliptical island having two long sides side by side, and each side of the two long sides is arranged side by side in the gas flow direction. The method of claim 8, The gas passage region between the islands provided in the first diffusion portion, the gas passage region between the islands provided in the second diffusion portion are positioned to be shifted from each other in a direction perpendicular to the gas flow direction. The method of claim 9, The gas passage region between the islands provided in the first diffusion portion, the gas passage region between the islands provided in the second diffusion portion are positioned to be shifted from each other in a direction perpendicular to the gas flow direction.