KR100306397B1 - Continuos deposition method of Al2O3 and Ta2O5 - Google Patents
Continuos deposition method of Al2O3 and Ta2O5 Download PDFInfo
- Publication number
- KR100306397B1 KR100306397B1 KR1019990057902A KR19990057902A KR100306397B1 KR 100306397 B1 KR100306397 B1 KR 100306397B1 KR 1019990057902 A KR1019990057902 A KR 1019990057902A KR 19990057902 A KR19990057902 A KR 19990057902A KR 100306397 B1 KR100306397 B1 KR 100306397B1
- Authority
- KR
- South Korea
- Prior art keywords
- thin film
- gas
- continuous
- vacuum chamber
- injecting
- Prior art date
Links
- 238000000151 deposition Methods 0.000 title claims abstract description 36
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 title 1
- 229910052593 corundum Inorganic materials 0.000 title 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 title 1
- 229910001845 yogo sapphire Inorganic materials 0.000 title 1
- 239000007789 gas Substances 0.000 claims abstract description 74
- 239000010409 thin film Substances 0.000 claims abstract description 73
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims abstract description 62
- 238000000034 method Methods 0.000 claims abstract description 60
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 229910052751 metal Inorganic materials 0.000 claims abstract description 31
- 239000002184 metal Substances 0.000 claims abstract description 31
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 23
- 238000010926 purge Methods 0.000 claims abstract description 17
- 239000002994 raw material Substances 0.000 claims abstract description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 10
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000007795 chemical reaction product Substances 0.000 claims abstract description 3
- 239000012495 reaction gas Substances 0.000 claims abstract description 3
- 239000000463 material Substances 0.000 claims description 16
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 11
- 238000003475 lamination Methods 0.000 claims description 10
- 229910052786 argon Inorganic materials 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 abstract description 14
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 abstract description 10
- 239000012535 impurity Substances 0.000 abstract description 2
- 239000003990 capacitor Substances 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910001936 tantalum oxide Inorganic materials 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02183—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing tantalum, e.g. Ta2O5
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Abstract
산화알미늄(Al2O3)과 산화탄탈륨(Ta2O5)의 연속적 증착방법에 관해 개시한다. 개시된 방법은: 타겟 기판이 로딩된 소정 온도 범위의 진공챔버 내에 소정의 수송가스와 함께 소정의 금속유기가스을 진공챔버 내로 주입하는 제 1 단계; 퍼지 가스를 주입하여 상기 타겟 기판에 부착된 금속유기가스의 잉여분을 제거하는 제 2 단계; 소정의 수송가스와 함께 산화물 원료를 주입하여 상기 타겟 기판에 부착된 금속유기가스를 산화시켜 증착하는 제 3 단계; 퍼지 가스를 주입시켜 진공챔버 내의 반응가스와 반응결과물을 배출하는 제 4 단계; 상기 제 1 단계 내지 제 4 단계를 2 회 이상 반복 실시하되, 반복된 상기 제1단계에서 금속유기가스로서 알루미늄유기가스와 탄탈륨유기가스 각각을 적어도 1 회 이상 주입하도록 하는 것을 특징으로 한다. 따라서, 본 발명의 Al2O3와 Ta2O5박막의 연속 적층방법은 유전체 박막을 형성함에 있어서, 원자층 두께 단위로 제어하기 때문에 원자 크기로 유전체 박막 두께의 제어가 가능할 뿐 아니라, 균일한 두께와 불순물 함유량이 적은 양질의 박막을 얻을 수 있게 된다.A continuous deposition method of aluminum oxide (Al 2 O 3 ) and tantalum oxide (Ta 2 O 5 ) is disclosed. The disclosed method comprises: a first step of injecting a predetermined metal organic gas into a vacuum chamber together with a predetermined transport gas in a vacuum chamber in a predetermined temperature range loaded with a target substrate; A second step of injecting purge gas to remove excess of the metal organic gas attached to the target substrate; Injecting an oxide raw material together with a predetermined transport gas to oxidize and deposit the metal organic gas attached to the target substrate; Injecting a purge gas to discharge the reaction gas and the reaction product in the vacuum chamber; Repeating the first step to the fourth step two or more times, it characterized in that to inject each of the aluminum organic gas and tantalum organic gas as a metal organic gas at least one or more times in the repeated first step. Therefore, the continuous stacking method of the Al 2 O 3 and Ta 2 O 5 thin film of the present invention is not only possible to control the thickness of the dielectric thin film at atomic size because it is controlled by atomic layer thickness in forming the dielectric thin film. It is possible to obtain a high quality thin film having a low thickness and low impurity content.
Description
본 발명은 산화알미늄(Al2O3)과 산화탄탈륨(Ta2O5)의 연속적 증착방법에 관한 것이다.The present invention relates to a continuous deposition method of aluminum oxide (Al 2 O 3 ) and tantalum oxide (Ta 2 O 5 ).
DRAM(Dynamic Random Access Memory) 반도체 소자의 고집적화 됨에 따라 보다 작은 면적에서 충분한 정전용량을 가지는 캐패시터(capacitor)의 개발이 필요하게 되었다. 지금까지는 SiO2를 박막화하거나 캐패시터의 구조를 스택(stack),트랜치(trench)등의 3차원 구조로 만드는 방법으로 정전용량을 확보하여 왔다. 그러나 SiO2의 박막화에는 파괴전압(breakdown voltage)의 저하와 누설전류(leakage current)의 증가를 유발하므로 한계가 있다. 또한 캐패시터의 구조를 입체화 하므로서 캐패시터의 면적확보를 위해서 HSG(Hemispherical grain)공정을 이용한 공정이 활발히 적용되고 있지만 여전히 공정의 어려움은 존재하고 있다. 특히 256Mbit급 이상의 메모리 반도체 소자에서는 캐패시터 구조의 입체화와 병행하여 기존의 ONO(Oxide/Nitride/Oxide)를 대체할 캐패시터용 절연막의 개발이 필수적이다.As the dynamic random access memory (DRAM) semiconductor devices have been highly integrated, it is necessary to develop a capacitor having sufficient capacitance in a smaller area. Until now, capacitance has been secured by thinning SiO 2 or by making the structure of a capacitor into a three-dimensional structure such as a stack or a trench. However, the thinning of SiO 2 has a limitation because it causes a decrease in breakdown voltage and an increase in leakage current. In addition, the process using the HSG (Hemispherical grain) process is actively applied to secure the area of the capacitor by making the structure of the capacitor solid, but there are still difficulties in the process. In particular, in the memory semiconductor device of 256Mbit or more, it is necessary to develop an insulating film for a capacitor to replace the existing ONO (Oxide / Nitride / Oxide) in parallel with the three-dimensional capacitor structure.
256Mbit급 이상의 메모리 반도체 소자에서 전지 구동이 가능하도록 1.5볼트 동작을 가정한다면 SiO2로 환산한 등가 산화막 두께(Toxeq)가 30Å이하인 캐패시터 절연막이 필요하게 된다. 그러나 ONO구조에서 Toxeq가 50Å이하가 되면 누설전류가 급격히 증가하게 됨으로 향후 50Å이하가 되더라도 누설전류의 증가가 크지 않은 새로운 캐패시터용 절연막의 개발이 필요하다. 최근들어 가장 관심을 갖고있는 새로운 캐패시터용 고유전막은 Al2O3와 Ta2O5이다. 이들 재료는 기존의 SiO2에 비해 유전율이 3-6배 정도 큰 물질로서 SiO2를 대체할 물질의 후보로서 많은 주목을 받고 있다.Assuming 1.5 volt operation to enable battery operation in a memory semiconductor device of 256 Mbit or more, a capacitor insulating film having an equivalent oxide thickness (Tox eq ) of 30 占 or less in terms of SiO 2 is required. However, when Tox eq is less than 50mA in the ONO structure, the leakage current rapidly increases, so it is necessary to develop a new insulating film for capacitors that does not increase the leakage current even if it is less than 50mA in the future. In recent years, the new dielectric films for the new capacitors are Al 2 O 3 and Ta 2 O 5 . These materials have been attracting much attention as candidates for replacing SiO 2 as materials having a dielectric constant of 3-6 times larger than conventional SiO 2 .
일반적으로 Al2O3나 Ta2O5는 스퍼터링(sputtering)법과 화학기상증착 (chemical vapor deposition)법의 두가지 방법에 의해서 증착된다 . 스퍼터링에 의한 증착 기술은 플라즈마(Plasma)를 발생시켜 플라즈마 내의 이온이 타킷에 있는물질을 떼어내어 기판에 증착시키는 방법으로 박막의 순도와 접착력 등에서는 유리한 방법이지만 요철에서의 균일성을 확보하기 어렵다는 단점때문에 점점 미세한 패턴에서는 그 응용이 매우 제한적이다.Generally, Al 2 O 3 or Ta 2 O 5 is deposited by two methods, sputtering and chemical vapor deposition. Deposition by sputtering is a method that generates plasma and removes ions in the target and deposits them on the substrate, which is advantageous in thin film purity and adhesion, but it is difficult to secure uniformity in unevenness. As a result, their application is very limited in increasingly fine patterns.
화학 기상 증착 기술은 가장 보편화된 기술로 여러 가지의 기체를 주입한 후 기체들에 열, 빛, 플라즈마등의 에너지를 이용하여 기체들의 반응을 유도하여 기판에 증착시키는 기술이다. 화학 기상 증착법에서의 화학 반응 속도는 반응 에너지를 공급하는 열, 빛, 플라즈마등에 의해 제어되거나 기체의 양과 비율 등을 통해 제어되게 된다. 그러나 이러한 화학 반응은 일반적으로 매우 빠르게 일어나 원자들의 열역학적 안정성을 이루면서 증착되도록 제어하기는 매우 어렵다. 따라서 박막의 물리적, 전기적, 화학적 성질 등이 원자 층 증착법에 비해 떨어지는 단점이 있고, 미세한 요철에서의 박막 균일성을 확보하기가 어렵다. 또한 반도체 소자의 집적도의 증가는 더 높은 종횡 비(Aspect Ratio)를 필요로 하기때문에 요철에서 박막 균일도의 요구는 한층 심화되어 가고 있다.Chemical vapor deposition technology is the most common technique to inject a variety of gases and then induce the reaction of the gases using energy such as heat, light, plasma to the gases to deposit on the substrate. In the chemical vapor deposition method, the chemical reaction rate is controlled by heat, light, plasma, or the like, which supplies reaction energy, or by the amount and ratio of gas. However, these chemical reactions generally occur very quickly and are difficult to control to deposit with the thermodynamic stability of the atoms. Therefore, the physical, electrical, chemical properties, etc. of the thin film has a disadvantage compared to the atomic layer deposition method, it is difficult to ensure the uniformity of the thin film in minute unevenness. In addition, since the increase in the degree of integration of semiconductor devices requires a higher aspect ratio, the demand for thin film uniformity in unevenness is intensifying.
Al2O3와 Ta2O5박막의 경우에 있어서 종래 화학기상증착법으로 증착된 박막은 스퍼터링에 의해서 증착된 박막에 비해 복잡한 구조에서의 단차 피복성(step coverage)은 우수한 반면 누설전류가 너무 크고, 파괴전압이 요구치보다 너무 작다. 따라서 Al2O3와 Ta2O5박막의 누설전류를 줄이고 파괴전압을 증가시키려는 시도가 활발히 이루어지고 있고, 이러한 시도의 한 방법으로 박막의 증착후에 후처리 공정을 통하여 박막의 막질을 개선하려는 시도가 활발하다.In the case of Al 2 O 3 and Ta 2 O 5 thin films, the thin films deposited by the conventional chemical vapor deposition method have superior step coverage in complex structures while the leakage current is too large compared to the thin films deposited by sputtering. , The breakdown voltage is too small. Therefore, attempts have been actively made to reduce leakage currents and increase breakdown voltages of Al 2 O 3 and Ta 2 O 5 thin films, and to improve the quality of thin films through post-treatment process after thin film deposition. Is active.
본 발명의 제1의 목적은 높은 유전상수를 갖는 Al2O3와 Ta2O5박막을 용이하게 연속 형성할 수 있는 Al2O3와 Ta2O5박막의 연속 적층방법을 제공하는 것이다.It is a first object of the present invention to provide a method for continuously stacking Al 2 O 3 and Ta 2 O 5 thin films which can easily form Al 2 O 3 and Ta 2 O 5 thin films having a high dielectric constant.
본 발명의 제2의 목적은 원자 단위로 두께의 제어가 가능한 Al2O3와 Ta2O5박막의 연속 적층방법을 제공하는 것이다.It is a second object of the present invention to provide a method for continuously laminating an Al 2 O 3 and Ta 2 O 5 thin film capable of controlling the thickness in atomic units.
본 발명의 제3의 목적은 균일한 두께를 가지는 Al2O3와 Ta2O5박막의 연속 적층방법을 제공하는 것이다.It is a third object of the present invention to provide a continuous lamination method of Al 2 O 3 and Ta 2 O 5 thin films having a uniform thickness.
도 1은 본 발명의 증착방법에 적용되는 수평형 진공챔버의 개략적 구조도이다.1 is a schematic structural diagram of a horizontal vacuum chamber applied to the deposition method of the present invention.
도 2 는 본 발명의 산화알미늄(Al2O3)과 산화탄탈륨(Ta2O5)의 연속적 증착방법의 일 실시예를 도시한 공정 순서도이다.FIG. 2 is a process flowchart showing an embodiment of a continuous deposition method of aluminum oxide (Al 2 O 3 ) and tantalum oxide (Ta 2 O 5 ) of the present invention.
도 3a 내지 3d는 산화알미늄(Al2O3)과 산화탄탈륨(Ta2O5)의 연속적 증착방법에서, 산화알루미늄 및 산화탄탈륨의 증착 과정을 개략적으로 순서대로 보인다.3a to 3d schematically show a process of depositing aluminum oxide and tantalum oxide in a continuous deposition method of aluminum oxide (Al 2 O 3 ) and tantalum oxide (Ta 2 O 5 ).
상기 목적을 달성하기 위하여 본 발명에 따르면,According to the present invention to achieve the above object,
타겟 기판이 로딩된 소정 온도 범위의 진공챔버 내에 소정의 수송가스와 함께 소정의 금속유기가스을 진공챔버 내로 주입하는 제 1 단계;A first step of injecting a predetermined metal organic gas into a vacuum chamber together with a predetermined transport gas in a vacuum chamber in a predetermined temperature range loaded with a target substrate;
퍼지 가스를 주입하여 상기 타겟 기판에 부착된 금속유기가스의 잉여분을 제거하는 제 2 단계;A second step of injecting purge gas to remove excess of the metal organic gas attached to the target substrate;
소정의 수송가스와 함께 산화물 원료를 주입하여 상기 타겟 기판에 부착된 금속유기가스를 산화시켜 증착하는 제 3 단계;Injecting an oxide raw material together with a predetermined transport gas to oxidize and deposit the metal organic gas attached to the target substrate;
퍼지 가스를 주입하시켜 진공챔버 내의 반응가스와 반응결과물을 배출하는 제 4 단계;를 포함하며,And a fourth step of discharging the reaction gas and the reaction product in the vacuum chamber by injecting the purge gas.
상기 제 1 단계 내지 제 4 단계를 2 회 이상 반복 실시하되, 반복된 상기 제1단계에서 금속유기가스로서 알루미늄유기가스와 탄탈륨유기가스 각각을 적어도1 회 이상 주입하도록 하는 것을 특징으로 하는 Al2O3와 Ta2O5박막의 연속 적층방법이 제공된다.Repeating the first to fourth steps two or more times, Al 2 O characterized in that to inject at least one or more times each of the aluminum organic gas and tantalum organic gas as the metal organic gas in the repeated first step A continuous lamination method of 3 and Ta 2 O 5 thin films is provided.
상기 본 발명의 Al2O3와 Ta2O5박막의 연속 적층방법에 있어서, 상기 Ta2O5박막을 증착하기 위한 탄탈륨 재료물질로서 Ta(OC2H5)5, Ta(OCH3)5, Ta(OCH3)6, Ta(OC2H5)5, Ta(OC3H7)5, Ta[OCH(CH3)2]5, Ta(OC4H9)5, Ta[OCH2CH(CH3)2]5, Ta[OCH(CH3)C2H5]5, Ta[OC(CH3)3]5, Ta[N(CH3)2]5, Ta(DPM)4Cl, Ta(thd)5, Ta(OR)5, TaCl5중의 어느 하나를 적용하며, Ta2O5박막을 증착을 위한 과정 중 상기 제3단계의 산화물 원료로써는 NH3, H2O, N2H4, O2, N2O, H2O2중의 어느 하나를 적용하는 것이 바람직하다.In the continuous stacking method of the Al 2 O 3 and Ta 2 O 5 thin film of the present invention, Ta (OC 2 H 5 ) 5 , Ta (OCH 3 ) 5 as a tantalum material for depositing the Ta 2 O 5 thin film , Ta (OCH 3 ) 6 , Ta (OC 2 H 5 ) 5 , Ta (OC 3 H 7 ) 5 , Ta [OCH (CH 3 ) 2 ] 5 , Ta (OC 4 H 9 ) 5 , Ta [OCH 2 CH (CH 3 ) 2 ] 5 , Ta [OCH (CH 3 ) C 2 H 5 ] 5 , Ta [OC (CH 3 ) 3 ] 5 , Ta [N (CH 3 ) 2 ] 5 , Ta (DPM) 4 One of Cl, Ta (thd) 5 , Ta (OR) 5 , and TaCl 5 is applied, and as the oxide raw material of the third step in the process of depositing a Ta 2 O 5 thin film, NH 3 , H 2 O, N 2 H 4, O 2, N 2 O, it is preferable to apply any one of H 2 O 2.
또한, 상기 본 발명의 Al2O3와 Ta2O5박막의 연속 적층방법에 있어서, 상기 Al2O3박막을 증착하기 위한 알미늄 재료물질로서, Al(CH3)3, AlCl3, Al(CH4)3, Al(CH3)2Cl, Al(CH4)2Cl, Al(O-iC3H7)3, Al(O-tC4H9)3, Al(BH4)3, (CH3)2Al(O-iC3H7), (CH3)2Al(O-tC4H4), (C2H5)2Al(O-iC3H7), Al(OEt)3, Al(OPr)3중의 어느 하나를 적용하며, 상기 Al2O3박막을 증착하기 위한 산화물 원료로서, H2O, O2, N2O, H2O2, CH3OH, CH2OHC2OH, t-C2H4OH, n-C4H9OH 중의 어느 하나를 적용하는 것이 바람직하다.In addition, in the continuous stacking method of the Al 2 O 3 and Ta 2 O 5 thin film of the present invention, as an aluminum material for depositing the Al 2 O 3 thin film, Al (CH 3 ) 3 , AlCl 3 , Al ( CH 4 ) 3 , Al (CH 3 ) 2 Cl, Al (CH 4 ) 2 Cl, Al (O-iC 3 H 7 ) 3 , Al (O-tC 4 H 9 ) 3 , Al (BH 4 ) 3 , (CH 3 ) 2 Al (O-iC 3 H 7 ), (CH 3 ) 2 Al (O-tC 4 H 4 ), (C 2 H 5 ) 2 Al (O-iC 3 H 7 ), Al (OEt ) 3 , Al (OPr) 3 is applied, and as an oxide raw material for depositing the Al 2 O 3 thin film, H 2 O, O 2 , N 2 O, H 2 O 2 , CH 3 OH, CH Preference is given to applying any one of 2 OHC 2 OH, tC 2 H 4 OH, nC 4 H 9 OH.
그리고, 상기 본 발명의 Al2O3와 Ta2O5박막의 연속 적층방법에 있어서,In the continuous lamination method of the Al 2 O 3 and Ta 2 O 5 thin film of the present invention,
상기 수송가스 및 퍼지 가스로서 알곤(Ar) 또는 질소(N2)를 적용하며, 상기 진공챔버 내의 온도를 200~600℃ 범위를 유지시키는 것이 바람직하다.Argon (Ar) or nitrogen (N2) is applied as the transport gas and the purge gas, it is preferable to maintain the temperature in the vacuum chamber 200 ~ 600 ℃ range.
이하 첨부된 도면을 참조하면서, 본 발명의 Al2O3와 Ta2O5박막의 연속 적층방법의 실시예를 상세히 설명한다.Hereinafter, with reference to the accompanying drawings, an embodiment of the continuous lamination method of Al 2 O 3 and Ta 2 O 5 thin film of the present invention will be described in detail.
본 발명의 Al2O3와 Ta2O5박막의 연속 적층방법를 도 1을 참조하면서, 단계별로 요약하면 다음과 같다.Referring to Figure 1, the continuous lamination method of Al 2 O 3 and Ta 2 O 5 thin film of the present invention are summarized step by step as follows.
제 1 단계: 타겟 기판이 로딩된 진공챔버 내에 수송가스와 함께 금속유기가스을 진공챔버 내로 주입하는 단계.First step: injecting the metal organic gas into the vacuum chamber together with the transport gas in the vacuum chamber loaded with the target substrate.
제 2 단계: 퍼지 가스를 주입하는 단계.Second step: injecting purge gas.
제 3 단계: 산화물 원료를 주입하는 단계.Third step: injecting the oxide raw material.
제 4 단계: 퍼지 가스를 주입하는 단계.Fourth step: injecting purge gas.
상기 1 단계에서는 기판을 가열하는 과정이 포함되며, 여기에서 기판은 반도체 소자 또는 캐패시터가 생성 중인 웨이퍼일 수 있고, 수송가스는 질소, 알곤 등이 적용되며, 금속유기가스는 알루미늄 또는 탄탈륨 유기가스이다. 제 2 단계와 제 4 단계에서 퍼지가스는 수송가스와 같이 질소 또는 알곤이다. 제 3 단계에서 산화물 원료는 기체 상태의 물(H2O)이다. 본 발명의 Al2O3와 Ta2O5박막의 연속 증착방법은 금속유기가스를 바꾸어 가면서 상기 제 1 단계 내지 제 4 단계를 반복 수행함으로써, 기판 상에 Al2O3물질과, Ta2O5물질에 의한 다중 적층을 얻을 수 있다.In the first step, a process of heating the substrate may be included, wherein the substrate may be a wafer in which a semiconductor device or a capacitor is being generated, nitrogen, argon, or the like may be applied to the transport gas, and the metal organic gas may be aluminum or tantalum organic gas. . In the second and fourth stages, the purge gas is nitrogen or argon like the transport gas. In the third step, the oxide raw material is gaseous water (H 2 O). In the continuous deposition method of the Al 2 O 3 and Ta 2 O 5 thin film of the present invention by repeating the first to fourth steps while changing the metal organic gas, Al 2 O 3 material and Ta 2 O on the substrate Multiple laminations with five materials can be obtained.
상기 금속유기가스는, Al2O3박막을 형성하는 단계에서는 Al(CH3)3이다.Al2O3박막 형성시 OH*기는 필수적인 성분으로서 타켓 기판이 대기에 노출되었을 때에 기판의 표면에 자발적으로 발생되는 것이나, 만약에 자발적으로 발생되지 않는 다면, 인위적으로 기판의 표면에 생성시켜야 한다. 그리고 Ta2O5박막을 형성하는 단계에서는 2Ta(OC2H5)5가 사용된다.When the metal organic gas, the step of forming the Al 2 O 3 thin film Al (CH 3) 3 as a .Al 2 O 3 thin film formed during OH * groups are essential components have been exposed to the target substrate is air spontaneously on the surface of the substrate If it does not occur spontaneously, it must be artificially generated on the surface of the substrate. In the forming of the Ta 2 O 5 thin film, 2Ta (OC 2 H 5 ) 5 is used.
이하 Al2O3박막과, Ta2O5박막의 성장과정을 각각 설명한다.Hereinafter, growth processes of the Al 2 O 3 thin film and the Ta 2 O 5 thin film will be described.
진공챔버는 도 2에 도시된 바와 같이, 가스주입구(1)와 진공배기구(2)가 마련되며, 반응관(3) 내에는 타겟 기판(4)이 설치되는 스테이지(5)가 마련되어 있다.그리고, 반응관(3) 에는 상기 타겟 기판(4)을 가열하기 위한 가열장치(6)가 설치된다.In the vacuum chamber, as shown in FIG. 2, a gas inlet 1 and a vacuum exhaust port 2 are provided, and a stage 5 in which the target substrate 4 is installed is provided in the reaction tube 3. The reaction tube 3 is provided with a heating device 6 for heating the target substrate 4.
AlAl 22 OO 33 박막의 형성 과정Formation Process of Thin Film
Al2O3은 반응식 1, 2 에 의해 기판(4) 위에 증착된다.Al 2 O 3 is deposited on the substrate 4 by Schemes 1 and 2.
상기 가스 주입구(1)를 통해 가스상태의 알루미늄유기금속인 Al(CH3)3를 수송 가스와 함께 소정량 주입한다. 이와 같이 하면, 알루미늄유기금속 Al(CH3)3는 기판(4)의 표면의 OH*기와 화학적 본딩(chemical bonding)에 의해 부착된다. 기판(4)에 대해 화학적 본딩에 부착된 알루미늄유기금속은 기판(4)의 표면에 1층을 이루고, 1층의 알루미늄유기금속의 위에 쌓이 2층 이상의 알루미늄유기금속은 댕글링 본딩에 의해 상호 결합을 유지한다.A predetermined amount of Al (CH 3 ) 3, which is a gaseous aluminum organic metal, is injected together with the transport gas through the gas injection port 1. In this way, the aluminum organic metal Al (CH 3 ) 3 is deposited by chemical bonding with the OH * groups on the surface of the substrate 4. The aluminum organic metal attached to the chemical bonding with respect to the substrate 4 forms one layer on the surface of the substrate 4, and two or more layers of aluminum organic metals stacked on one layer of the aluminum organic metal are mutually bonded by dangling bonding. Keep the bond.
이와 같은 상태에서 퍼지가스를 소정량 주입하여, 댕글링 본딩에 의해 1층의 알루미늄유기금속의 위에 존재하는 2층 이상의 알루미늄유기금속과 반응관 내의 알루미늄유기금속 등의 잔류물질을 제거한다.In such a state, a predetermined amount of purge gas is injected to remove residual materials such as two or more layers of aluminum organic metal and aluminum organic metal in the reaction tube by dangling bonding.
가스 상태의 물(H2O)을 일정한 시간 간격동안 반응관 안으로 흘려보내 그 전에 기판에 쌓여 있던 알미늄 유기금속과 반응시켜 화합물( 여기서는 산화알미늄) 한 층이 증착되고, 여분의 물질은 잔여의 물(H2O)과 CH4의 형태로 되어 배기구(2)로 배기된다. 이렇게 하여 한 원자층의 산화알미늄(Al2O3)이 증착된다. 다시 한번 퍼지가스를 주입하여 반응관(3)과 기판(4)상의 여분의 물질을 배기시킨다. 이상과 같은 단계들을 통해 산화알미늄은 원자층 단위로 증착이 된다.A gaseous water (H 2 O) flows into the reaction tube for a period of time and reacts with the aluminum organometallic previously accumulated on the substrate, depositing a layer of the compound (here, aluminum oxide) and depositing excess material. It is in the form of (H 2 O) and CH 4 and is exhausted to the exhaust port (2). Thus, one atomic layer of aluminum oxide (Al 2 O 3 ) is deposited. The purge gas is injected once again to exhaust excess material on the reaction tube 3 and the substrate 4. Through the above steps, the aluminum oxide is deposited in atomic layer units.
상기 Al2O3박막을 증착하기 위한 알미늄 재료물질로서, Al(CH3)3, AlCl3, Al(CH4)3, Al(CH3)2Cl, Al(CH4)2Cl, Al(O-iC3H7)3, Al(O-tC4H9)3, Al(BH4)3, (CH3)2Al(O-iC3H7), (CH3)2Al(O-tC4H4), (C2H5)2Al(O-iC3H7), Al(OEt)3, Al(OPr)3중의 어느 하나를 적용할 수 있다.As an aluminum material for depositing the Al 2 O 3 thin film, Al (CH 3 ) 3 , AlCl 3 , Al (CH 4 ) 3 , Al (CH 3 ) 2 Cl, Al (CH 4 ) 2 Cl, Al ( O-iC 3 H 7 ) 3 , Al (O-tC 4 H 9 ) 3 , Al (BH 4 ) 3 , (CH 3 ) 2 Al (O-iC 3 H 7 ), (CH 3 ) 2 Al (O Any one of -tC 4 H 4 ), (C 2 H 5 ) 2 Al (O-iC 3 H 7 ), Al (OEt) 3 , and Al (OPr) 3 may be used.
그리고, 상기 Al2O3박막을 증착하기 위한 산화물 원료로서, H2O, O2, N2O, H2O2, CH3OH, CH2OHC2OH, t-C2H4OH, n-C4H9OH 중의 어느 하나를 적용할 수 있다.And, as an oxide raw material for depositing the Al 2 O 3 thin film, H 2 O, O 2 , N 2 O, H 2 O 2 , CH 3 OH, CH 2 OHC 2 OH, tC 2 H 4 OH, nC 4 Any one of H 9 OH can be applied.
TaTa 22 OO 55 박막의 형성 과정Formation Process of Thin Film
Ta2O5의 증착에 필요한 원료물질로써, 금속유기가스는 Ta(OC2H5)5이며, 산화물 원료는 역시 물(H2O)를 사용하며, 이 반응 물질들을 수송하기 위한 가스로는 질소(N2)를 사용한다.As a raw material for the deposition of Ta 2 O 5 , the metal organic gas is Ta (OC 2 H 5 ) 5 , and the oxide raw material also uses water (H 2 O), and nitrogen is used as a gas to transport the reactants. (N 2 ) is used.
Ta2O5는 아래의 반응식 3, 4에 의해 기판(4) 상에 증착된다.Ta 2 O 5 is deposited on the substrate 4 by Schemes 3 and 4 below.
Ta2O5증착방법은 앞에서 설명한 금속유기가스를 2Ta(OC2H5)5로 변경한 상태에서 전술한 제1단계에서 제4단계를 실시함으로서 산화알미늄의 증착과 동일한 과정을 통해 증착된다.The Ta 2 O 5 deposition method is deposited through the same process as the deposition of aluminum oxide by performing the fourth step from the first step described above with the metal organic gas described above changed to 2Ta (OC 2 H 5 ) 5 .
반응식 3에서는 수송가스와 같이 주입된 2Ta(OC2H5)5가 기판 또는 산화알루미늄(Al2O3) 위에 부착된 것을 의미하며, 반응식 4는 산화물 원료인 가스 상태의 물(H2O)가 주입되었을 때의 반응을 보인다.In Scheme 3, 2Ta (OC 2 H 5 ) 5 injected together with a transport gas is attached on a substrate or aluminum oxide (Al 2 O 3 ), and Scheme 4 is gaseous water (H 2 O) which is an oxide raw material. It reacts when is injected.
한편 Ta2O5의 증착을 위하여 사용될 수 있는 물질로는 탄탈륨 재료물질로서 Ta(OC2H5)5, Ta(OCH3)5, Ta(OCH3)6, Ta(OC2H5)5, Ta(OC3H7)5, Ta[OCH(CH3)2]5, Ta(OC4H9)5, Ta[OCH2CH(CH3)2]5, Ta[OCH(CH3)C2H5]5, Ta[OC(CH3)3]5, Ta[N(CH3)2]5, Ta(DPM)4Cl,Ta(thd)5, Ta(OR)5, TaCl5중의 어느 하나를 적용할 수 있다. 또한, Ta2O5박막을 증착을 위한 과정에 있어서, 상기 제3단계의 산화물 원료로써는 NH3, H2O, N2H4, O2, N2O, H2O2중의 어느 하나를 적용할 수 있다.On the other hand, the material that can be used for the deposition of Ta 2 O 5 as a tantalum material material Ta (OC 2 H 5 ) 5 , Ta (OCH 3 ) 5 , Ta (OCH 3 ) 6 , Ta (OC 2 H 5 ) 5 , Ta (OC 3 H 7 ) 5 , Ta [OCH (CH 3 ) 2 ] 5 , Ta (OC 4 H 9 ) 5 , Ta [OCH 2 CH (CH 3 ) 2 ] 5 , Ta [OCH (CH 3 ) C 2 H 5 ] 5 , Ta [OC (CH 3 ) 3 ] 5 , Ta [N (CH 3 ) 2 ] 5 , Ta (DPM) 4 Cl, Ta (thd) 5 , Ta (OR) 5 , TaCl 5 Any one of can be applied. In addition, in the process of depositing a Ta 2 O 5 thin film, as the oxide raw material of the third step, any one of NH 3 , H 2 O, N 2 H 4 , O 2 , N 2 O, H 2 O 2 Applicable
도 3a 내지 3d는 산화알루미늄 및 산화탄탈륨의 증착과정을 개략적으로 보인다.3a to 3d schematically show the deposition process of aluminum oxide and tantalum oxide.
도 3a 는 수송 가스와 함께 금속유기가스(Al(CH3)3, 2Ta(OC2H5)5)가 기판(4)으로 공급되는 상태를 보이며, 도 3b는 한 원자층으로 금속유기가스(Al(CH3)3, 2Ta(OC2H5)5)가 기판(4)에 부착된 이 후, 퍼지가스(N2)에 의해 1층의 금속유기가스(Al(CH3)3, 2Ta(OC2H5)5)를 제외한 잉여 금속유기가스가 기판(4)으로 부터 분리되어 배출되는 상태를 보인다.3A shows a state in which a metal organic gas (Al (CH 3 ) 3 , 2Ta (OC 2 H 5 ) 5 ) is supplied to the substrate 4 together with a transport gas, and FIG. 3B shows a metal organic gas (A) as an atomic layer. After Al (CH 3 ) 3 , 2Ta (OC 2 H 5 ) 5 ) is attached to the substrate 4, one layer of metal organic gas (Al (CH 3 ) 3 , 2Ta is formed by purge gas (N 2 ). Except for (OC 2 H 5 ) 5 ), the surplus metal organic gas is separated from the substrate 4 and discharged.
도 3c는 산화물 원료인 물(H2O)가 수송가스(N2)와 같은 한 원자층을 이루는 금속유기가스(Al(CH3)3, 2Ta(OC2H5)5)층의 위로 공급되는 상태를 보이며, 도 3d는 상기 물에 의해 금속유기가스(Al(CH3)3, 2Ta(OC2H5)5)가 반응하여 기판(4)에 금속산화물(Al2O3, Ta2O5)가 증착되고, 이 반응에 의해 발생된 유기가스(CH4, CH2CH3OH)의 배출을 보인다.FIG. 3C shows that the oxide raw material water (H 2 O) is supplied over a layer of metal organic gas (Al (CH 3 ) 3 , 2Ta (OC 2 H 5 ) 5 ) forming an atomic layer such as a transport gas (N 2 ). 3D shows that the metal organic gas (Al (CH 3 ) 3 , 2Ta (OC 2 H 5 ) 5 ) reacts with the water to form a metal oxide (Al 2 O 3 , Ta 2 ) on the substrate 4. O 5 ) is deposited and shows the emission of organic gas (CH 4 , CH 2 CH 3 OH) generated by this reaction.
이상의 과정에서 진공챔버 내의 온도를 200~600℃ 범위를 유지시키는 것이 바람직하다.In the above process, it is preferable to maintain the temperature in the vacuum chamber in the range of 200 to 600 ° C.
본 발명에 따르면 위의 반응식 1, 2 식에 의해 알미늄 산화물을 한 원자층 증착시킨 뒤 반응식 3, 4 에 의해 탄탈륨 산화물을 한 원자층 증착시킨뒤 이를 반복하여 복합층을 형성하거나, 또는 반응식 3, 4에 의해 산화 탄탈륨(Ta2O5)을 한 원자층 증착시킨뒤 상기 반응식 1, 2에 의해 산화 알미늄(Al2O3)을 한 원자층 증착시킬수 있다. 즉, 전술한 Al2O3박막의 형성 과정과 Ta2O5박막의 형성 과정을 반복실시함으로써 기판(4) 상에 Al2O3/Ta2O5또는 Ta2O5/Al2O3적층구조를 얻을 수 있다. 또한 필요에 따라, Al2O3박막의 형성 과정과 Ta2O5박막의 형성 과정 각각을 수회 반복함으로써, 2층이상의 Al2O3박막과 Ta2O5박막을 얻을 수 있게 된다.According to the present invention, one atomic layer of aluminum oxide is deposited by the above Reaction Schemes 1 and 2, and one atomic layer of tantalum oxide is deposited by the following Schemes 3 and 4, and then the composite layer is repeatedly formed, or by using Scheme 3, Tantalum oxide (Ta 2 O 5 ) may be deposited by one atomic layer, and then aluminum oxide (Al 2 O 3 ) may be deposited by the above reaction schemes 1 and 2. That is, by repeating the above-described process of forming the Al 2 O 3 thin film and forming the Ta 2 O 5 thin film, Al 2 O 3 / Ta 2 O 5 or Ta 2 O 5 / Al 2 O 3 on the substrate 4. A laminated structure can be obtained. In addition, by repeating each of the formation process of the Al 2 O 3 thin film and the formation process of the Ta 2 O 5 thin film as needed, two or more Al 2 O 3 thin films and Ta 2 O 5 thin films can be obtained.
본 발명은 산화알미늄(Al2O3)과 산화탄탈륨(Ta2O5)을 연속적으로 증착하는 방법을 제공함으로써, 종래의 화학기상증착(CVD) 방법이나 스퍼터링 증착법으로는 증착이 어려운 산화알미늄(Al2O3)박막과 산화탄탈륨(Ta2O5)박막을 기판에 용이하게 증착할 수 있다. 상기 본 발명의 Al2O3와 Ta2O5박막의 연속 적층방법은 유전체 박막을형성함에 있어서, 원자층 두께 단위로 제어하기 때문에 원자 크기로 유전체 박막 두께의 제어가 가능할 뿐 아니라, 균일한 두께와 불순물 함유량이 적은 양질의 박막을 얻을 수 있게 된다.The present invention provides a method of continuously depositing aluminum oxide (Al 2 O 3 ) and tantalum oxide (Ta 2 O 5 ), thereby making it difficult to deposit by conventional chemical vapor deposition (CVD) or sputtering deposition. An Al 2 O 3 ) thin film and a tantalum oxide (Ta 2 O 5 ) thin film can be easily deposited on a substrate. In the continuous stacking method of the Al 2 O 3 and Ta 2 O 5 thin film of the present invention, in the formation of the dielectric thin film, since the atomic layer thickness is controlled, not only the dielectric film thickness can be controlled at the atomic size, but also the uniform thickness. It is possible to obtain a thin film of good quality with little and impurity content.
이러한 본 발명은 고집적 반도체 소자의 캐패시터의 제작 또는 반도체 소자의 게이트 제작 또는 단일의 캐패세터 소자의 제작에 적용될 수 있다.The present invention can be applied to fabrication of capacitors of highly integrated semiconductor devices, gate fabrication of semiconductor devices, or fabrication of single capacitor devices.
본 발명은 도면에 도시된 실시예를 참고로 설명되었으나, 이는 예시적인 것에 불과하며, 당해 분야에서 통상적 지식을 가진 자라면 이로부터 다양한 변형 및 균등한 타 실시예가 가능하다는 점을 이해할 것이다. 따라서, 본 발명의 진정한 기술적 보호 범위는 첨부된 특허청구범위 한해서 정해져야 할 것이다.Although the present invention has been described with reference to the embodiments shown in the drawings, this is merely illustrative, and those skilled in the art will understand that various modifications and equivalent other embodiments are possible therefrom. Therefore, the true technical protection scope of the present invention will be defined only by the appended claims.
Claims (17)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019990057902A KR100306397B1 (en) | 1999-12-15 | 1999-12-15 | Continuos deposition method of Al2O3 and Ta2O5 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019990057902A KR100306397B1 (en) | 1999-12-15 | 1999-12-15 | Continuos deposition method of Al2O3 and Ta2O5 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20010056446A KR20010056446A (en) | 2001-07-04 |
| KR100306397B1 true KR100306397B1 (en) | 2001-10-17 |
Family
ID=19626039
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019990057902A KR100306397B1 (en) | 1999-12-15 | 1999-12-15 | Continuos deposition method of Al2O3 and Ta2O5 |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR100306397B1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100830193B1 (en) | 2005-05-31 | 2008-05-16 | 윈텍 주식회사 | Touch panel fabrication method |
| WO2010120954A2 (en) * | 2009-04-16 | 2010-10-21 | Advanced Technology Materials, Inc. | Doped zro2 capacitor materials and structures |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100624903B1 (en) * | 1999-12-22 | 2006-09-19 | 주식회사 하이닉스반도체 | Method of manufacturing a capacitor in a semiconductor device |
| KR100414156B1 (en) * | 2001-05-29 | 2004-01-07 | 삼성전자주식회사 | Method for manufacturing capacitor in integrated circuits device |
| KR100464650B1 (en) * | 2002-04-23 | 2005-01-03 | 주식회사 하이닉스반도체 | Capacitor of semiconductor device having dual dielectric layer structure and method for fabricating the same |
| KR100620451B1 (en) * | 2005-01-10 | 2006-09-11 | 삼성전자주식회사 | A metal oxidation alloy layer, method of manufacturing a metal oxidation alloy layer, and method of manufacturing a gate structure and a capacitor using the same |
| KR100757418B1 (en) | 2006-09-05 | 2007-09-10 | 삼성전자주식회사 | Semiconductor device and methods of forming the same |
| WO2013177326A1 (en) | 2012-05-25 | 2013-11-28 | Advanced Technology Materials, Inc. | Silicon precursors for low temperature ald of silicon-based thin-films |
| WO2014124056A1 (en) | 2013-02-08 | 2014-08-14 | Advanced Technology Materials, Inc. | Ald processes for low leakage current and low equivalent oxide thickness bitao films |
-
1999
- 1999-12-15 KR KR1019990057902A patent/KR100306397B1/en not_active IP Right Cessation
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100830193B1 (en) | 2005-05-31 | 2008-05-16 | 윈텍 주식회사 | Touch panel fabrication method |
| WO2010120954A2 (en) * | 2009-04-16 | 2010-10-21 | Advanced Technology Materials, Inc. | Doped zro2 capacitor materials and structures |
| WO2010120954A3 (en) * | 2009-04-16 | 2011-03-24 | Advanced Technology Materials, Inc. | Doped zro2 capacitor materials and structures |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20010056446A (en) | 2001-07-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6838122B2 (en) | Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers | |
| US7052584B2 (en) | Method of forming a capacitor | |
| KR100519146B1 (en) | METHODS OF FORMING A HIGH k DIELECTRIC LAYER AND A CAPACITOR | |
| US6863725B2 (en) | Method of forming a Ta2O5 comprising layer | |
| US20010029891A1 (en) | Apparatus and method for forming ultra-thin film of semiconductor device | |
| US20050037154A1 (en) | Method for forming thin film | |
| US7166541B2 (en) | Method of forming dielectric layer using plasma enhanced atomic layer deposition technique | |
| US7052918B2 (en) | Multi-layer film for thin film structure, capacitor using the same and fabrication method thereof | |
| KR100306397B1 (en) | Continuos deposition method of Al2O3 and Ta2O5 | |
| KR100451569B1 (en) | Method for fabricating semiconductor device having Hydrogen barrier | |
| US6485564B1 (en) | Thin film forming method | |
| KR100542247B1 (en) | Atomic layer deposition of titanium nitride using batch type chamber and method for fabricating capacitor by the same | |
| US20070264770A1 (en) | Capacitor forming method | |
| KR20080029716A (en) | Flash memory device and manufacturing method thereof | |
| KR20020064126A (en) | Method for forming gate oxide thin film using atomic layer chemical vapor deposition system | |
| KR100996884B1 (en) | Semiconductor device empolying an oxide layer prepared by ecr-ald, preparation method thereof and the uses therof | |
| KR101152390B1 (en) | Dielectric layer in capacitor and fabricating using the same and capacitor in semiconductor device and fabricating using the same | |
| US6090455A (en) | Method for forming SBT ferroelectric thin film | |
| KR100372018B1 (en) | Capacitor of semiconductor memory device and the manufacturing method thereof | |
| KR100275330B1 (en) | Method of fabricating capacitor of semiconductor device | |
| US7045445B2 (en) | Method for fabricating semiconductor device by using PECYCLE-CVD process | |
| KR100382370B1 (en) | Preventive treatment method of susceptor of CVD device | |
| JPH06104396A (en) | Formation of high-dielectric constant thin film | |
| US20030012875A1 (en) | CVD BST film composition and property control with thickness below 200 A for DRAM capacitor application with size at 0.1mum or below | |
| KR0147635B1 (en) | Method for manufacturing thin film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| N231 | Notification of change of applicant | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20080808 Year of fee payment: 8 |
|
| LAPS | Lapse due to unpaid annual fee |