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KR100269605B1 - Dry etcher to improve uniformity of wafer - Google Patents

Dry etcher to improve uniformity of wafer Download PDF

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Publication number
KR100269605B1
KR100269605B1 KR1019970065825A KR19970065825A KR100269605B1 KR 100269605 B1 KR100269605 B1 KR 100269605B1 KR 1019970065825 A KR1019970065825 A KR 1019970065825A KR 19970065825 A KR19970065825 A KR 19970065825A KR 100269605 B1 KR100269605 B1 KR 100269605B1
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wafer
process chamber
upper electrode
pressure
pump
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KR1019970065825A
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Korean (ko)
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KR19990047417A (en
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강성훈
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김영환
현대반도체주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: A dry etching apparatus improving the etching uniformity of a wafer is provided to implement a TMP(turbo molecular pump) in the etching apparatus and to adjust the outlet pressure as well as the pressure inside of the chamber to improve the etching uniformity. CONSTITUTION: The dry etching apparatus includes an upper electrode(103), a vat valve, a lower electrode(105), a pump(107), and the TMP(109). The upper electrode is formed on the upper portion of the operation chamber(101) under process. The vat valve is formed inside of the upper electrode and adjusts the pressure of the operation chamber. The lower electrode maintains the spacing from the upper electrode and receives the wafer on the surface thereof. The pump drains the operation gas in the operation chamber. The TMP is attached to the pump and increases the drain pressure. The spacing between the upper and the lower electrodes is less than 1.5cm while the pressure in the operation chamber is maintained higher than 450mT to distribute the operation gas on the wafer surface uniformly.

Description

웨이퍼의 식각균일성을 향상시키는 건식각장치{Dry etcher to improve uniformity of wafer}Dry etching device to improve the uniformity of wafers

본 발명은 웨이퍼의 식각균일성을 향상시키는 건식각장치에 관한 것으로 더욱 상세하게는 TMP(Turbo molecular pump)가 장착된 반응성 이온식각장치(Reactive ion etching)에서 공정조건을 조정하여 웨이퍼의 식각균일성을 향상시키는 건식각장치에 관한 것이다.The present invention relates to a dry etching apparatus for improving the etching uniformity of the wafer, and more particularly, to etching uniformity of the wafer by adjusting process conditions in a reactive ion etching apparatus equipped with a turbo molecular pump (TMP). It relates to a dry etching apparatus to improve the.

일반적으로 Si3N4로 이루어진 박막을 식각하기 위해서는 도 1에서 도시된 바와 같은 반응성 이온식각장치가 사용된다. 상기 반응성 이온식각장치는 공정이 진행되는 공정 챔버(1)내의 상측에 형성되는 상부전극(3)과, 상기 상부전극(3)의 내측에 형성되어 공정챔버(1)내의 압력을 조절하는 배트 밸브(vat valve)(미도시)와, 상기 상부전극(3)과 일정간격을 유지하고 상부면에 웨이퍼(5)가 안착되는 하부전극(7)과, 상기 공정 챔버(1)내의 공정가스를 배출하기 위한 펌프(9)로 구성된다.In general, in order to etch a thin film made of Si 3 N 4 , a reactive ion etching apparatus as shown in FIG. 1 is used. The reactive ion etching apparatus includes an upper electrode 3 formed at an upper side of the process chamber 1 where a process is performed, and a bat valve formed inside the upper electrode 3 to control pressure in the process chamber 1. (vat valve) (not shown), the lower electrode 7 which maintains a predetermined distance from the upper electrode 3 and the wafer 5 is seated on the upper surface, and discharges the process gas in the process chamber 1. It consists of a pump 9 for this purpose.

이러한 상기 반응성 이온식각 장치 내에서의 공정조건은 공정 챔버내의 압력을 400mT로 유지하고 상부 전극(3)과 하부 전극(7)과의 간극을 1.5cm로 형성하므로써 식각면의 고균일도(High uniformity)를 얻을 수 있다.The process conditions in the reactive ion etching apparatus maintain the pressure in the process chamber at 400 mT and form a gap of 1.5 cm between the upper electrode 3 and the lower electrode 7 to achieve high uniformity of the etching surface. Can be obtained.

이때 상기 반응성 이온식각장치의 펌프(9)에 반응가스의 배출을 향상시키는 TMP를 장착한 상태에서 동일한 공정조건으로 식각작업을 진행하면 균일도가 약 10 % 정도로 저하되어 불균일한 식각이 진행된다.In this case, when the etching operation is performed under the same process conditions in a state in which the TMP for improving the discharge of the reaction gas is mounted on the pump 9 of the reactive ion etching device, the uniformity is lowered to about 10%, resulting in uneven etching.

즉, 펌프(9)에 장착된 TMP에 의하여 공정 챔버(1)내의 공정가스를 방출하는 배출력이 증대되고 이러한 배출력에 의하여 하부 전극에 안착된 웨이퍼(5)의 주변으로 공정가스와 상호 작용된 플라즈마가 집중되어 웨이퍼(5)의 테두리 부분에서의 식각은 활발하게 진행되고 웨이퍼의 중앙부에서는 식각이 느려져 전체적인 균일도가 저하된다.That is, the discharge force for releasing the process gas in the process chamber 1 is increased by the TMP mounted on the pump 9, and the discharge force interacts with the process gas around the wafer 5 seated on the lower electrode. As the plasma is concentrated, the etching at the edge of the wafer 5 is actively progressed, and the etching is slowed at the center portion of the wafer, thereby decreasing the overall uniformity.

따라서, 종래의 반응성 이온식각장치 내에 TMP를 장착한 상태에서 식각작업을 진행하는 경우 웨이퍼 전체면의 식각 균일도가 급격히 저하되어 반응성 이온식각장치 내에는 TMP를 장착하여 사용하지 못하는 문제점이 있다.Therefore, when etching is performed while the TMP is mounted in the conventional reactive ion etching apparatus, the uniformity of etching of the entire surface of the wafer is drastically reduced, and thus the TMP is not mounted and used in the reactive ion etching apparatus.

본 발명의 목적은 반응성 이온식각장치 내에 TMP를 장착한 상태에서 상부전극과 하부전극의 간격을 적절한 간격으로 이격하고 플라즈마 가스가 웨이퍼에 균일하게 작용하도록 배출압력과 공정 챔버내의 압력을 형성하여 웨이퍼의 식각 균일성을 향상시키는 건식각장치를 제공하는데 있다.An object of the present invention is to space the gap between the upper electrode and the lower electrode at appropriate intervals while the TMP is mounted in the reactive ion etching apparatus, and to form the discharge pressure and the pressure in the process chamber so that the plasma gas acts uniformly on the wafer. The present invention provides a dry etching apparatus for improving etching uniformity.

따라서, 본 발명은 상기의 목적을 달성하고자, 공정이 진행되는 공정 챔버내의 상측에 형성되는 상부전극과, 상기 상부전극의 내측에 형성되어 공정챔버내의 압력을 조절하는 배트 밸브(vat valve)와, 상기 상부전극과 일정 간격을 유지하고 상부면에 웨이퍼가 안착되는 하부전극과, 상기 공정 챔버내의 공정가스를 배출하기 위한 펌프와, 상기 펌프에 연결되어 공정 가스에 대한 배출력을 증대시키는 TMP(Turbo molecular pump)로 구성되며, 상기 상부 및 하부 전극의 간격을 1.5㎝ 이하로 하며, 상기 공정챔버의 압력을 450mT 이상 유지되도록 하여 웨이퍼 표면에 공정가스가 균일하게 분포되도록 한 것을 특징으로 한다.Accordingly, the present invention is to achieve the above object, an upper electrode formed on the upper side in the process chamber in which the process proceeds, and a bat valve (vat valve) formed inside the upper electrode to adjust the pressure in the process chamber, A lower electrode having a predetermined distance from the upper electrode and a wafer seated on an upper surface thereof, a pump for discharging the process gas in the process chamber, and a TMP (Turbo) connected to the pump to increase discharge power to the process gas; It is composed of a molecular pump), the gap between the upper and lower electrodes is 1.5cm or less, and the process gas is maintained uniformly distributed on the wafer surface by maintaining the pressure of the process chamber 450mT or more.

도 1은 종래의 반응성 이온식각장치를 도시한 구성도이고,1 is a block diagram showing a conventional reactive ion etching apparatus,

도 2는 본 발명의 반응성 이온식각장치를 도시한 구성도이다.2 is a block diagram showing a reactive ion etching apparatus of the present invention.

* 도면의 주요 부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings

1, 101 : 공정 챔버, 3, 103 : 상부 전극,1, 101: process chamber, 3, 103: upper electrode,

5 : 웨이퍼, 7, 105 : 하부 전극,5: wafer, 7, 105: lower electrode,

9, 107 : 펌프, 109 : TMP.9, 107: pump, 109: TMP.

이하, 첨부된 도면을 참조하여 본 발명을 설명하면 다음과 같다.Hereinafter, the present invention will be described with reference to the accompanying drawings.

도 2는 본 발명의 반응성 이온식각장치를 도시한 구성도이다.2 is a block diagram showing a reactive ion etching apparatus of the present invention.

식각공정이 진행되는 공정 챔버(101)내의 상측에 RF가 인가되는 상부전극(103)이 형성되고 상기 공정 챔버(101)내의 일측에 압력을 450mT 이상으로 유지하는 배트 밸브(미도시)가 형성된다.An upper electrode 103 to which RF is applied is formed on the inside of the process chamber 101 where the etching process is performed, and a bat valve (not shown) is formed on one side of the process chamber 101 to maintain a pressure of 450 mT or more. .

또한 상기 상부전극(103)과 대응되는 하부전극(105)이 형성되어 상부면에 웨이퍼(5)가 안착된다.In addition, a lower electrode 105 corresponding to the upper electrode 103 is formed so that the wafer 5 is seated on the upper surface.

한편 상기 하부전극(105)과 인접된 위치에 공정가스를 배출하는 펌프(107)가 형성된다. 이러한 펌프(107)는 TMP(109)와 상호 연결되어 상기 공정 챔버(101)내의 공정가스 배출력을 증가시킨다.Meanwhile, a pump 107 for discharging the process gas is formed at a position adjacent to the lower electrode 105. This pump 107 is interconnected with the TMP 109 to increase the process gas discharge force in the process chamber 101.

이때 상기 하부전극(105)과 상부전극(103)이 상호 이격되는 거리는 약 1.5 cm이하가 되도록 하며 공정 챔버(101)내에 유입되는 공정 가스인 CF4와 O2는 유량비가 12 : 1 이 되도록하여 Si3N4로 이루어진 웨이퍼의 박막 식각시의 균일도를 향상시킨다.In this case, the distance between the lower electrode 105 and the upper electrode 103 is about 1.5 cm or less, and CF 4 and O 2 , which are the process gases flowing into the process chamber 101, have a flow ratio of 12: 1. The uniformity during the etching of the thin film of the wafer made of Si 3 N 4 is improved.

본 발명의 반응성 이온식각장치에 의한 웨이퍼 식각과정을 알아보면 다음과 같다.Looking at the wafer etching process by the reactive ion etching apparatus of the present invention.

도면을 참조하면 공정 챔버(101)내의 하부전극(105) 상부면에 안착된 웨이퍼(5)를 식각하기 위해서 상기 하부전극(105)과 일정거리이상 이격되어 형성된 상부전극(103)에 RF가 인가되어 공정챔버(101)내에 유입되는 공정가스와 상호 반응하면서 플라즈마를 생성하고 이러한 플라즈마가 웨이퍼(5)측으로 이송되면서 웨이퍼(5)가 식각된다.Referring to the drawing, RF is applied to the upper electrode 103 spaced apart from the lower electrode 105 by a predetermined distance to etch the wafer 5 seated on the upper surface of the lower electrode 105 in the process chamber 101. As a result, plasma is generated while reacting with the process gas flowing into the process chamber 101, and the plasma is etched while the plasma is transferred to the wafer 5.

이때 상기 공정 챔버(101)내에 형성된 TMP(109)에 의하여 플라즈마 가스가 배출되는 시간이 단축되고 이에 따라 플라즈마 가스가 웨이퍼(5)에 작용하여 식각하는 시간도 단축되어 전체면의 불균일하게 식각될 수 있다.In this case, the time for discharging the plasma gas by the TMP 109 formed in the process chamber 101 may be shortened, and thus the time for etching the plasma gas by acting on the wafer 5 may be shortened, resulting in uneven etching of the entire surface. have.

따라서 이러한 TMP(109)의 장착에 의한 공정 챔버(101)내의 압력변화에 대응하기 위하여 공정 챔버(101)내의 압력과 상기 상부전극(103)과 하부전극(105)간의 상호 이격된 거리를 조절하여 웨이퍼(5)의 표면에 균일하게 플라즈마 가스가 도달하도록 플라즈마 가스의 전달속도를 조절한다.Therefore, the pressure in the process chamber 101 and the distance between the upper electrode 103 and the lower electrode 105 are adjusted by adjusting the pressure in the process chamber 101 due to the mounting of the TMP 109. The delivery speed of the plasma gas is adjusted so that the plasma gas reaches the surface of the wafer 5 uniformly.

즉, 상부전극(103)과 하부전극(105)간의 이격거리를 웨이퍼(5)의 전체면에 플라즈마 가스가 고르게 도달하도록 충분히 가깝게 하되 플라즈마 가스가 웨이퍼(5)에 전달되어 식각될 수 있는 정도의 시간을 확보하도록 거리를 형성한다.That is, the separation distance between the upper electrode 103 and the lower electrode 105 is sufficiently close so that the plasma gas reaches the entire surface of the wafer 5 evenly, but the plasma gas is transferred to the wafer 5 to be etched. Form a distance to secure time.

이러한 상부전극(103)과 하부전극(105)간의 거리는 약 1.5cm이내가 적당하다.The distance between the upper electrode 103 and the lower electrode 105 is appropriate within about 1.5cm.

이러한 이격거리는 공정챔버(101)내의 압력에도 영향을 받으며 1.5cm이내로 상·하부전극(103)(105)이 이격된 상태에서는 TMP(109)의 배출압으로 플라즈마 가스가 배출되는 시간을 적절히 유지하기 위하여 공정 챔버(101) 내부의 압력을 약 450mT 이상으로 유지함이 바람직하다.The separation distance is also affected by the pressure in the process chamber 101, and in the state where the upper and lower electrodes 103 and 105 are spaced within 1.5 cm or less, maintaining the time for the plasma gas to be discharged by the discharge pressure of the TMP 109. In order to maintain the pressure inside the process chamber 101 to about 450mT or more.

따라서 상기 배출압과 공정 챔버(101)내의 압력 차에 의하여 플라즈마 가스의 배출시간이 웨이퍼(5)의 식각작업을 균일하게 수행 할 수 있도록 조절된다.Therefore, the discharge time of the plasma gas is adjusted to uniformly perform the etching operation of the wafer 5 by the discharge pressure and the pressure difference in the process chamber 101.

한편, 공정 챔버(101)내에 유입되는 공정 가스인 CF4와 O2는 유량비를 12 : 1 이 되도록하여 Si3N4로 이루어진 박막 식각시의 균일도를 향상시키도록 한다.Meanwhile, CF 4 and O 2 , which are the process gases flowing into the process chamber 101, have a flow rate ratio of 12: 1 to improve uniformity during etching of a thin film made of Si 3 N 4 .

상기에서 상술된 바와 같이, 본 발명은 반응성 이온식각장치 내에 TMP를 장착한 상태에서 상부전극과 하부전극을 적절한 간격으로 이격하고 플라즈마 가스가 웨이퍼에 균일하게 작용하도록 배출압력과 공정 챔버내의 압력을 형성하여 웨이퍼의 식각 균일성을 향상시키는 잇점이 있다.As described above, the present invention forms a discharge pressure and a pressure in the process chamber so that the upper electrode and the lower electrode are spaced at appropriate intervals while the TMP is mounted in the reactive ion etching apparatus, and the plasma gas acts uniformly on the wafer. This has the advantage of improving the etching uniformity of the wafer.

Claims (2)

공정이 진행되는 공정 챔버내의 상측에 형성되는 상부전극과;An upper electrode formed above the process chamber in which the process is performed; 상기 상부전극의 내측에 형성되어 공정챔버내의 압력을 조절하는 배트 밸브(vat valve)와;A vat valve formed inside the upper electrode to adjust a pressure in the process chamber; 상기 상부전극과 일정 간격을 유지하고 상부면에 웨이퍼가 안착되는 하부전극과;A lower electrode maintaining a predetermined distance from the upper electrode and having a wafer seated on an upper surface thereof; 상기 공정 챔버내의 공정가스를 배출하기 위한 펌프와;A pump for discharging the process gas in the process chamber; 상기 펌프에 연결되어 공정 가스에 대한 배출력을 증대시키는 TMP(Turbo molecular pump)로 구성되며,It is composed of a turbo molecular pump (TMP) connected to the pump to increase the discharge power to the process gas, 상기 상부 및 하부 전극의 간격을 1.5㎝ 이하로 하며, 상기 공정챔버의 압력을 450mT 이상 유지되도록 하여 상기 웨이퍼 표면에 공정가스가 균일하게 분포되도록 한 것을 특징으로 하는 웨이퍼의 식각균일성을 향상시키는 건식각장치.The gap between the upper and lower electrodes is 1.5 cm or less, and the process chamber is maintained at 450 mT or more so that the process gas is uniformly distributed on the wafer surface. Etching device. 청구항 1에 있어서,The method according to claim 1, 상기 공정챔버로 공급되는 공정가스인 CF4와 O2는 12 : 1 의 유량비로 상기 공정챔버내에 유입되는 것을 특징으로 하는 웨이퍼의 식각균일성을 향상시키는 건식각장치CF 4 and O 2 , which are process gases supplied to the process chamber, are introduced into the process chamber at a flow ratio of 12: 1.
KR1019970065825A 1997-12-04 1997-12-04 Dry etcher to improve uniformity of wafer KR100269605B1 (en)

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KR20030000815A (en) * 2001-06-27 2003-01-06 삼성전자 주식회사 Dry etching system having buffer room

Citations (1)

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JPH03277787A (en) * 1990-03-27 1991-12-09 Fujitsu Ltd Etching device

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03277787A (en) * 1990-03-27 1991-12-09 Fujitsu Ltd Etching device

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