KR0118570Y1 - Ion implanter - Google Patents
Ion implanterInfo
- Publication number
- KR0118570Y1 KR0118570Y1 KR2019940034232U KR19940034232U KR0118570Y1 KR 0118570 Y1 KR0118570 Y1 KR 0118570Y1 KR 2019940034232 U KR2019940034232 U KR 2019940034232U KR 19940034232 U KR19940034232 U KR 19940034232U KR 0118570 Y1 KR0118570 Y1 KR 0118570Y1
- Authority
- KR
- South Korea
- Prior art keywords
- electrode
- arc chamber
- cations
- acceleration tube
- post acceleration
- Prior art date
Links
- 150000001768 cations Chemical class 0.000 claims abstract description 27
- 230000001133 acceleration Effects 0.000 claims abstract description 20
- 238000000605 extraction Methods 0.000 claims abstract description 18
- 230000001629 suppression Effects 0.000 claims abstract description 18
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 16
- 238000005468 ion implantation Methods 0.000 claims abstract description 14
- 150000002500 ions Chemical class 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 2
- 238000004904 shortening Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 3
- 238000003892 spreading Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physical Vapour Deposition (AREA)
Abstract
본 고안은 양으로 대전되어 양이온을 생성하는 ARC 챔버, 상기 ARC 챔버로 부터 생성된 양이온을 가속시키기 위해 음으로 대전된 추출전극, 터미널 내부에서 양이온이 추출되는 통로인 후가속튜브, 상기 후가속튜브로 부터 추출된 가속된 양이온을 추가 가속하기 위해 음으로 대전된 서프레션(suppression) 전극을 구비하여 ARC 챔버로 부터 차례로 추출전극, 후가속튜브, 서프레션 전극으로 이어지는 이온빔 경로를 갖는 이온주입장치에 있어서; 상기 ARC 챔버와 추출전극 사이 및 상기 후가속튜브와 서프레션 전극 사이에 각각 형성되어, ARC 챔버와 추출전극의 사이 및 상기 후가속튜브와 서프레션 전극 사이의 이온빔 경로상의 양이온을 일정방향으로 모으는 양으로 대전된 전극 수단을 더 구비하는 것을 특징으로 하는 이온주입장치에 관한 것으로, 웨이퍼상에 단 시간에 많은 양의 양이온을 주입할 수 있어, 이온주입 공정시간을 단축시키며, 궁극적으로 반도체 소자 제조 공정시간의 단축을 가져와 소자의 생산력을 향상시키는 효과가 있다.The present invention is an ARC chamber positively charged to generate a cation, a negatively charged extraction electrode to accelerate the cations generated from the ARC chamber, a post acceleration tube which is a passage through which cations are extracted from the terminal, and the post acceleration tube An ion implantation device having a negatively charged suppression electrode for further accelerating the accelerated cations extracted from the reactor, which has an ion beam path from the ARC chamber to the extraction electrode, the post acceleration tube, and the suppression electrode. In; The amount is formed between the ARC chamber and the extraction electrode and between the post acceleration tube and the suppression electrode, respectively, to collect positive ions on the ion beam path between the ARC chamber and the extraction electrode and between the post acceleration tube and the suppression electrode in a predetermined direction. The present invention relates to an ion implantation apparatus further comprising an electrode means that is charged with an electrode, and a large amount of cations can be implanted on a wafer in a short time, thereby shortening an ion implantation process time and ultimately a semiconductor device manufacturing process. There is an effect of reducing the time to improve the productivity of the device.
Description
제1도는 종래의 이온주입장치 전극구조 주요부분을 나타내는 구성도,1 is a block diagram showing a main portion of a conventional ion implanter electrode structure,
제2도는 본 고안에 따른 이온주입장치 전극 구조를 나타내는 구성도.Figure 2 is a block diagram showing the structure of the ion implanter electrode according to the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1:터미널 2:ARC 챔버1: Terminal 2: ARC Chamber
3:추출전극 4:후가속튜브3: Extraction electrode 4: Post acceleration tube
5:서프레션 전극 6:웨이퍼5: suppression electrode 6: wafer
7;이온빔 10,20:링 전극7 ion beam 10,20 ring electrode
반도체 소자 제조 공정중 웨이퍼에 원하는 도펀트(dopant)를 주입하는 공정에 사용되는 이온주입장치(Ion Implanter)에 관한 것으로, 특히 이온주입장치에서 웨이퍼에 도달하는 이온의 수를 증가시키기 위한 이온주입장치의 전극 구조에 관한 것이다.The present invention relates to an ion implanter used in a process of injecting a desired dopant into a wafer during a semiconductor device manufacturing process, and more particularly, to an ion implanter for increasing the number of ions reaching the wafer in the ion implanter. It relates to an electrode structure.
제1도는 종래의 이온주입장치의 전극구조 주요부분을 나타내는 구성도로서, 도면에서 1은 터미널, 2는 양으로 대전되어 양이온을 생성하는 ARC 챔버, 3은 ARC 챔버로 부터 생성된 양이온을 가속시키기 위한 음으로 대전된 추출전극(extraction electrode), 4는 터미널 내부에서 양이온이 추출되는 통로인 후가속튜브(post-acceleration tube), 5는 상기 후가속튜브로 부터 추출된 가속된 양이온을 추가 가속하기 위한 음으로 대전된 서프레션(suppression) 전극, 6은 웨이퍼, 7은 이온빔을 각각 나타낸다.1 is a block diagram showing the main part of the electrode structure of the conventional ion implantation apparatus, in which 1 is a terminal, 2 is a positively charged ARC chamber, 3 is to accelerate the cations generated from the ARC chamber Negatively charged extraction electrode, 4 is a post-acceleration tube, which is a passage through which cations are extracted inside the terminal, and 5 is a further acceleration of the accelerated cations extracted from the post acceleration tube. A negatively charged suppression electrode, 6 for a wafer and 7 for an ion beam, respectively.
ARC 챔버(2)로 부터 만들어진 양이온이 음으로 대전된 추출전극(3)와 ARC 챔버 사이의 전위차에 의해 터미널(1) 내에서 가속된 후, 후가속튜브(4)를 통해서 터미널(1)에서 배출되어 다시 음으로 대전된 서프레션 전극(5)에 의해 추가 가속되어 웨이퍼(6) 내로 주입된다.The cations produced from the ARC chamber 2 are accelerated in the terminal 1 by the potential difference between the negatively charged extraction electrode 3 and the ARC chamber, and then at the terminal 1 through the post acceleration tube 4. The discharge electrode is further accelerated by the negatively charged suppression electrode 5 and injected into the wafer 6.
그러나, 이온빔(6)이 양이온으로 이루어진 관계로 각 이온들 사이에 척력이 존재하여 ARC 챔버(2)와 추출전극(3), 후가속튜브(4)와 서프레션 전극(5) 사이에 도면에 도시된 바와같이 이온빔이 퍼지는 현상(beam blow-up)이 발생하여 이온빔의 손실이 있게 된다.However, since the ion beam 6 is composed of positive ions, there is a repulsive force between the respective ions, and thus, between the ARC chamber 2, the extraction electrode 3, the post acceleration tube 4 and the suppression electrode 5, As shown in the drawing, a beam blow-up occurs and there is a loss of the ion beam.
결과적으로 추출전극과 서프레션 전극의 슬릿(slit)를 통과하는 양이온의 수가 줄어들어 그만큼 웨이퍼 내로 주입되는 이온의 손실을 가져오기 때문에 높은 도핑(doping)을 요하는 이온주입 공정에서 장시간의 공정시간이 소요되는 문제점이 있었다.As a result, the number of cations passing through the slit of the extraction electrode and the suppression electrode decreases, resulting in a loss of ions injected into the wafer, which requires a long process time in an ion implantation process requiring high doping. There was a problem.
또한, 슬릿을 통과하지 못한 이온이 전극을 때려 전자가 생성되고 이것이 양으로 대전된 ARC 챔버에 부딪혀 엑스레이(X-ray)가 발생하는 문제점이 있다.In addition, there is a problem that ions that do not pass through the slit hit the electrode to generate electrons, which hit the positively charged ARC chamber, resulting in X-rays.
따라서, 본 고안은 이온주입되는 양이온이 실리콘 웨이퍼까지 도달하는 경로에서 발생하는 빔 퍼짐 현상을 방지하여 이온주입 효과를 극대화 시키는 이온주입장치를 제공함을 그 목적으로 한다.Accordingly, an object of the present invention is to provide an ion implantation apparatus that maximizes the ion implantation effect by preventing the beam spreading phenomenon occurring in the path of the ion implantation cation reaches the silicon wafer.
상기 목적을 달성하기 위하여 본 고안은 양으로 대전되어 양이온을 생성하는 ARC 챔버, 상기 ARC 챔버로 부터 생성된 양이온을 가속시키기 위해 음으로 대전된 추출전극, 터미널 내부에서 양이온이 추출되는 통로인 후가속튜브, 상기 후가속튜브로 부터 추출된 가속된 양이온을 추가 가속하기 위해 음으로 대전된 서플레션 전극을 구비하여 ARC 챔버로 부터 차례로 추출전극, 후가속튜브, 서프레션 전극으로 이어지는 이온빔 경로를 갖는 이온주입장치에 있어서; 상기 ARC 챔버와 추출전극의 사이 및 상기 후가속튜브와 서프레션 전극 사이에 각각 형성되어, ARC 챔버와 추출전극의 사이 및 상기 후가속튜브와 서프레션 전극 사이의 이온빔 경로상의 양이온을 일정방향으로 모으는 양으로 대전된 전극 수단을 더 구비하는 것을 특징으로 한다.In order to achieve the above object, the present invention provides an ARC chamber that positively charges to generate cations, a negatively charged extraction electrode to accelerate cations generated from the ARC chamber, and a post-acceleration path through which cations are extracted from the terminal. Ion having an ion beam path from the ARC chamber to the extraction electrode, the post acceleration tube, and the suppression electrode, in turn, having a negatively charged suppression electrode to further accelerate the accelerated cations extracted from the post acceleration tube. In the injection device; It is formed between the ARC chamber and the extraction electrode and between the post acceleration tube and the suppression electrode, respectively, to collect cations on the ion beam path between the ARC chamber and the extraction electrode and between the post acceleration tube and the suppression electrode in a predetermined direction. It is characterized by further comprising a positively charged electrode means.
이하, 첨부된 도면 제2도를 참조하여 본 고안을 상세히 설명한다.Hereinafter, the present invention will be described in detail with reference to FIG. 2.
제2도는 본 고안에 따른 이온주입장치의 전극 구조를 나타내는 것으로, ARC 챔버(2)와 추출전극(3) 사이에, 그리고 후가속튜브(4)와 서프레션 전극(5) 사이에 각각 양으로 대전된 링모양의 전극(10,20)를 첨가시킨 것이다. 그리고 그 밖의 도면부호는 앞서 설명한 제1도와 동일함으로 그 설명을 생략한다.FIG. 2 shows the electrode structure of the ion implantation apparatus according to the present invention, in which the amount is between the ARC chamber 2 and the extraction electrode 3 and between the post acceleration tube 4 and the suppression electrode 5, respectively. Charged ring-shaped electrodes 10 and 20 were added. Other reference numerals are the same as in FIG. 1 and the description thereof will be omitted.
이와같이 양으로 대전된 링 전극을 첨가하면 이온빔이 링 전극(10,20)을 통과할시에 양이온들간의 척력으로 인해 퍼진 이온빔이 다시 양으로 대전된 링의 척력으로 인해 응축하게 된다.When the positively charged ring electrode is added in this way, when the ion beam passes through the ring electrodes 10 and 20, the ion beam spread due to the repulsive force between the cations again condenses due to the repulsive force of the positively charged ring.
물론, 양으로 대전된 링과 퍼진 양이온들 사이의 척력이 각 양이온들 사이에 존재하는 척력보다 크도록 링에 걸리는 양(+) 전압의 세기를 조절해야 한다.Of course, one must adjust the strength of the positive voltage across the ring so that the repulsive force between the positively charged ring and the spread cations is greater than the repulsive force present between each cation.
결과적으로, 응축된 이온빔이 대부분 각 전극의 슬릿을 통과하여 이온빔의 손실을 최소화 하게 되고, 웨이퍼에 주입되는 이온의 수가 증가한다.As a result, most of the condensed ion beam passes through the slit of each electrode to minimize the loss of the ion beam, and the number of ions injected into the wafer increases.
이상, 상기 설명과 같은 본 고안의 이온주입장치는 ARC 챔버로 부터 만들어진 양이온으로 이루어진 이온빔이 웨이퍼에 도달할 때까지 이온빔 퍼짐 현상으로 인한 양이온의 손실을 최대로 억제하여, 웨이퍼상에 단 시간에 많은 양의 양이온을 주입할 수 있어, 이온주입 공정시간을 단축시키며, 궁극적으로 반도체 소자 제조 공정 시간의 단축을 가져와 소자의 생산력을 향상시키는 효과가 있다.As described above, the ion implantation apparatus of the present invention, as described above, minimizes the loss of cations due to ion beam spreading phenomena until the ion beam made of the cations made from the ARC chamber reaches the wafer, thereby increasing the amount of cations on the wafer in a short time. Since positive cations can be injected, the ion implantation process time can be shortened, and ultimately, the semiconductor device manufacturing process time can be shortened, thereby improving the productivity of the device.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019940034232U KR0118570Y1 (en) | 1994-12-15 | 1994-12-15 | Ion implanter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019940034232U KR0118570Y1 (en) | 1994-12-15 | 1994-12-15 | Ion implanter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR960025303U KR960025303U (en) | 1996-07-22 |
| KR0118570Y1 true KR0118570Y1 (en) | 1998-08-01 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR2019940034232U KR0118570Y1 (en) | 1994-12-15 | 1994-12-15 | Ion implanter |
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| Country | Link |
|---|---|
| KR (1) | KR0118570Y1 (en) |
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1994
- 1994-12-15 KR KR2019940034232U patent/KR0118570Y1/en not_active IP Right Cessation
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| Publication number | Publication date |
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| KR960025303U (en) | 1996-07-22 |
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