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KR0118458B1 - Unloading method of semiconductor wafer - Google Patents

Unloading method of semiconductor wafer

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Publication number
KR0118458B1
KR0118458B1 KR1019930030482A KR930030482A KR0118458B1 KR 0118458 B1 KR0118458 B1 KR 0118458B1 KR 1019930030482 A KR1019930030482 A KR 1019930030482A KR 930030482 A KR930030482 A KR 930030482A KR 0118458 B1 KR0118458 B1 KR 0118458B1
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South Korea
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temperature
wafer
condition
under
pressure
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KR1019930030482A
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Korean (ko)
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KR950021184A (en
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박상훈
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김주용
현대전자산업주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

An unloading method of wafers is provided to prevent an out-gassing and a stress of wafer. The unloading method comprises the steps of: falling a temperature of chamber into 3-5 deg C per second under a first condition being gas flow of 500SCCM, pressure of 0.1 Torr and RF power of 1000W; falling a temperature of chamber into 2-4 deg C per second under a second condition being gas flow of 250SCCM, pressure of 1.5 Torr and RF power of 500W; and falling a temperature of wafer into 1-3 deg C per second under a third condition being gas flow of 110SCCM, pressure of 3.0 Torr and RF power of 100W, thereby downing the temperature of wafer into a room temperature using plasma.

Description

웨이퍼 언로딩 방법Wafer Unloading Method

본 발명은 반도체 공정을 진행한 후 웨이퍼를 언로딩(unloading)시키는 방법에 관한 것으로, 특히, 공정진행중인 웨이퍼는 가열되어 약 200℃ 이상의 고온을 유지하게 되는데, 이로 인하여 가열된 웨이퍼가 대기 중에 나오면 급격하게 온도가 강하하여 문제가 발생되는 것을 해결하는 웨이퍼 언로딩 방법에 관한 것이다. 소정의 공정이 끝난 웨이퍼의 온도가 200℃이상일때에 대기중으로 웨이퍼가 언로딩(unloading)되면, 온도가 급격하게 강하하여 웨이퍼의 표면에 입자(particle)가 발생하거나, 스트레스가 증가하며, 또한 아웃개싱(out-gasing)과 같은 문제가 발생한다. 따라서, 본 발명은 상기한 문제점을 해소하기 위하여 웨이퍼를 언로딩시킬 때 웨이퍼의 온도를 천천히 하강시키도록 하는데 그 목적이 있다.The present invention relates to a method of unloading a wafer after a semiconductor process, and in particular, a wafer in process is heated to maintain a high temperature of about 200 ° C. or higher, so that when the heated wafer comes out of the atmosphere, The present invention relates to a wafer unloading method for solving a problem caused by a drop in temperature. When the wafer is unloaded into the atmosphere when the temperature of the wafer after the predetermined process is over 200 ° C., the temperature drops sharply and particles are generated on the surface of the wafer, or stress is increased. Problems such as out-gasing occur. Accordingly, an object of the present invention is to slowly lower the temperature of the wafer when unloading the wafer in order to solve the above problems.

본 발명에 의하면, 고온 공정장비에 온도센서 및 온도지시계를 갖춘 시스템을 구비하여, 소정의 고온공정이 끝난 후에 N2+O2, O2, N2등의 가스를 이용하여 RF에너지를 인가하되, 가스총량 500SCCM, RF에너지 1000W, 압력 0.1Torr의 제1조건하에서 온도를 초당 3∼5℃씩 강하시키는 단계와, 가스총량 250SCCM, RF에너지 500W, 압력1.5Torr의 제2조건하에서 온도를 초당 2∼4℃씩 강하시키는 단계와, 가스총량 110sCCM, RF에너지 100W, 압력 3.0Torr의 제3조건하에서 초당 1∼3℃씩 강하시키는 단계로 진행하여 플라즈마에 의해 열을 발생시켜 서서히 웨이퍼의 온도를 대기온도까지 낮추게 한다음 웨이퍼를 언로딩 시키는 방법이 특징이다.According to the present invention, a high temperature process equipment is provided with a system having a temperature sensor and a temperature indicator, and after the predetermined high temperature process is applied to the RF energy using a gas such as N 2 + O 2 , O 2 , N 2 , And dropping the temperature by 3 to 5 ° C per second under a first condition of a total gas amount of 500 SCCM, an RF energy of 1000 W, and a pressure of 0.1 Torr. The temperature is dropped by 1 to 3 ° C per second under the third condition of dropping by ~ 4 ° C and under the third condition of the total gas amount 110sCCM, RF energy 100W, and pressure 3.0 Torr. The method is to lower the temperature and then unload the wafer.

이하, 본 발명을 상세히 설명하면 다음과 같다.Hereinafter, the present invention will be described in detail.

본 발명은 소정의 고온공정이 끝난 다음에 공정반응실에 온도센서 및 온도지시계가 구비된 반도체 장비의 공정반응실에 N2, O2및 N2와 O2혼합가스에 의한 플라즈마를 발생시켜 초당 1∼5℃씩 온도강하를 시켜 대기온도까지 다운시킨 후 웨이퍼를 언로딩시키는 것이다. 이때 가스의 사용량은 100∼500SCCM RF에너지는 100∼1000W, 압력은 0.1∼3.0torr의 범위로 사용한다. 한편, 상기와 같이 온도를 초당 1∼5℃씩 강하시키기 위해 본 발명에서는 다음과 같이 공정진행을 몇단계로 구분하여 실행한다. 즉 상기에서 설명한 공정조건인 가스 사용량 100∼500SCCM, RF에너지 100∼1000W, 압력 0.1∼3.0Torr의 조건하에서 웨이퍼의 온도를 서서히 강하시키되, 그 진행단계를 아래와 같이 3단계로 실시할 경우 실험에 의해 온도강하가 이루어짐을 알 수 있다. 예컨데, 제1조건으로 가스총량 500SCCM, RF에너지 1000W, 압력 0.1Torr하에서 약 100±5℃의 열이 발생하게 하며, 제2조건으로 가스총량 250SCCM, RF에너지 500W, 압력 1.5Torr하에서 약 80±5℃의 열이 발생하게 하며, 제3조건으로 가스총량 110SCCM, RF에너지100W, 압력 3.0Torr하에서 약 50±5℃의 열이 발생된다. 따라서, 소정의 공정이 완료되어 약 200℃이상의 온도를 갖는 웨이퍼에 상기 제1조건을 인가하여 초당 3∼5℃씩 온도강하를 시키고, 웨이퍼의 온도가 130℃에 도달하면 상기 제2조건으로 변경하여 초당 2∼4℃씩 온도강하를 시키고, 웨이퍼의 온도가 약 90℃에 도달하면 가스총량 500SCCM, 압력 3Torr의 조건으로 변경하여 웨이퍼의 온도가 초당 약 5℃정도로 강하되도록 하여 상온이 될 때까지 유지한다. 상기한 바와 같이 본 발명은 인위적인 방법에 의하여 서서히 웨이퍼의 온도를 낮춤으로써 공기중의 불순물이 온도차이에 의해 웨이퍼에 달라붙는 현상을 방지하며 급격한 온도 강하에 의한 스트레스를 억제하고, 또한 온도차이에 의해 아웃개싱되는 문제도 방지할 수 있다.The present invention generates a plasma by the N 2 , O 2 and N 2 and O 2 mixed gas in the process reaction chamber of the semiconductor equipment equipped with a temperature sensor and a temperature indicator in the process reaction chamber after a predetermined high temperature process The temperature is dropped by 1 to 5 ° C. to bring it down to the atmospheric temperature, and then the wafer is unloaded. At this time, the gas is used in the range of 100 to 500 SCCM RF energy and 100 to 1000 W, and the pressure is 0.1 to 3.0 torr. On the other hand, in order to lower the temperature by 1 to 5 ℃ per second as described above, the process proceeds in several steps as follows. In other words, if the temperature of the wafer is gradually lowered under the conditions of the above-described process conditions of gas consumption of 100 to 500 SCCM, RF energy of 100 to 1000 W, and pressure of 0.1 to 3.0 Torr, the process is carried out in three steps as follows. It can be seen that the temperature drop is made. For example, under the first condition, heat of about 100 ± 5 ° C is generated under a total gas volume of 500SCCM, 1000W of RF energy, and 0.1 Torr under pressure, and about 80 ± 5 under a total gas of 250SCCM, 500W of RF energy and under 1.5Torr pressure. Heat of about ℃ is generated and heat of about 50 ± 5 ℃ is generated under the total condition 110SCCM, RF energy 100W, pressure 3.0 Torr as the third condition. Therefore, when the predetermined process is completed, the first condition is applied to a wafer having a temperature of about 200 ° C. or more to decrease the temperature by 3 to 5 ° C. per second, and when the temperature of the wafer reaches 130 ° C., the second condition is changed to the second condition. Temperature drop by 2 ~ 4 ℃ per second, when the temperature of wafer reaches about 90 ℃, change the gas volume to 500SCCM and pressure 3Torr until the temperature of wafer drops to about 5 ℃ per second until it reaches room temperature. Keep it. As described above, the present invention gradually lowers the temperature of the wafer by an artificial method to prevent the impurities in the air from sticking to the wafer due to the temperature difference, and to suppress the stress caused by the sudden temperature drop, and also by the temperature difference. Outgassing can also be prevented.

Claims (2)

소정의 공정이 끝난 웨이퍼를 반도체 장비에서 실온의 외부로 꺼낼 때 예정된 가스에서 RF에너지를 웨이퍼에 인가하되, 가스총량 500SCCM, RF에너지 1000W, 압력 0.1Torr의 제1조건하에서 온도를 초당 3∼5℃씩 강하시키는 단계와, 가스총량 250SCCM, RF에너지 500W,압력 1.5Torr의 제2조건하에서 온도를 초당 2∼4℃씩 강하시키는 단계와, 가스총량 110SCCM, RF에너지 100W, 압력 3.0Torr의 제3조건하에서 초당 1∼3℃씩 강하시키는 단계로 진행하여 플라즈마에 의해 열을 발생시켜 서서히 웨이퍼의 온도를 대기온도까지 낮추는 것을 특징으로 하는 웨이퍼 언로딩 방법.When the wafer is removed from the semiconductor equipment at room temperature after the predetermined process, RF energy is applied to the wafer from a predetermined gas, but the temperature is 3 to 5 ° C. per second under the first condition of 500 SCCM gas, 1000 W of RF energy and 0.1 Torr pressure. Dropping the temperature step by step, and dropping the temperature by 2 to 4 ° C per second under a second condition of a total gas amount of 250 SCCM, an RF energy of 500 W, and a pressure of 1.5 Torr, and a third condition of a total gas amount of 110 SCCM, an RF energy of 100 W, and a pressure of 3.0 Torr. Wafer unloading method characterized in that the step of descending by 1 ~ 3 ℃ per second under the heat generated by the plasma to gradually lower the temperature of the wafer to the atmospheric temperature. 제1항에 있어서, 상기 예정된 가스는 N2, O2또는 N2+O2가스인 것을 특징으로 하는 웨이퍼 언로딩 방법.The method of claim 1, wherein the predetermined gas is N 2 , O 2, or N 2 + O 2 gas.
KR1019930030482A 1993-12-28 1993-12-28 Unloading method of semiconductor wafer Expired - Fee Related KR0118458B1 (en)

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KR1019930030482A KR0118458B1 (en) 1993-12-28 1993-12-28 Unloading method of semiconductor wafer

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KR1019930030482A KR0118458B1 (en) 1993-12-28 1993-12-28 Unloading method of semiconductor wafer

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KR950021184A KR950021184A (en) 1995-07-26
KR0118458B1 true KR0118458B1 (en) 1997-09-30

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KR100732859B1 (en) * 2004-11-03 2007-06-27 동부일렉트로닉스 주식회사 Manufacturing Method of Semiconductor Device

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