KR0160971B1 - Marking method of wafer - Google Patents
Marking method of wafer Download PDFInfo
- Publication number
- KR0160971B1 KR0160971B1 KR1019900018349A KR900018349A KR0160971B1 KR 0160971 B1 KR0160971 B1 KR 0160971B1 KR 1019900018349 A KR1019900018349 A KR 1019900018349A KR 900018349 A KR900018349 A KR 900018349A KR 0160971 B1 KR0160971 B1 KR 0160971B1
- Authority
- KR
- South Korea
- Prior art keywords
- marking
- wafer
- silicon wafer
- pedestal
- mask
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 22
- 239000010703 silicon Substances 0.000 claims abstract description 22
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 12
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000005530 etching Methods 0.000 claims abstract description 8
- 239000000126 substance Substances 0.000 claims abstract description 7
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 6
- 229910021642 ultra pure water Inorganic materials 0.000 claims abstract description 5
- 239000012498 ultrapure water Substances 0.000 claims abstract description 5
- 239000012634 fragment Substances 0.000 claims description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 3
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 239000011651 chromium Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 22
- 238000010330 laser marking Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229960002050 hydrofluoric acid Drugs 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67282—Marking devices
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Weting (AREA)
- Laser Beam Processing (AREA)
Abstract
본 발명은 실리콘 웨이퍼 제조방법에 관한 것으로, 특히 질산:불산:초순수 부피비가 2:3:2인 실리콘 식각용액을 이용하여 실리콘 웨이퍼 마킹하는데 적당하도록 한것으로 전면에 크롬이 입혀진 마스크(1)하단에 Cr의 제거된 직사각형 공백부분을 만들고 상기 공백 부분에 Cr부호조각(4)을 유입시키기 위한 받침대(3)를 설치하여 필요한 Cr부호조작(4)을 받침대에 유입한후 질산:불산:초순식 부피비가 2:3:2인 실리콘 식각용 화학용액을 사용하여 웨이퍼에 고유부호를 마킹하는 것을 특징으로 한다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a silicon wafer, and in particular, to make a silicon wafer marking using a silicon etching solution having a nitric acid: hydrofluoric acid: ultrapure water volume ratio of 2: 3: 2. After making the rectangular blank portion of the blank and installing the pedestal (3) for introducing the Cr-engraved piece (4) into the blank portion, the required Cr-code operation (4) was introduced into the pedestal and the nitric acid: hydrofluoric acid: ultrapure volume ratio It is characterized by marking a unique code on the wafer using a 2: 3: 2 silicon etching chemical solution.
Description
제1도는 본 발명에 따른 웨이퍼 마킹 장치도.1 is a wafer marking apparatus according to the present invention.
제2도는 본 발명에 따른 Cr부호조각.2 is a piece of Cr code according to the present invention.
제3도는 본 발명에 따른 받침대의 측면도.3 is a side view of a pedestal according to the invention.
제4도는 본 발명에 따른 받침대의 정면도.4 is a front view of the pedestal according to the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : Cr 마스크 2 : 실리콘 웨이퍼1: Cr mask 2: Silicon wafer
3 : Cr 부호 조각 4 : Cr 받침대3: Cr code fragment 4: Cr base
본 발명은 실리콘 웨이퍼 마킹 방법에 관한 것으로, 특히 질산:불산:초순수 부피비가 2:3:2인 실리콘 식각용액을 이용하여 실리콘 웨이퍼 마킹하는데 적당하도록 한 실리콘 웨이퍼 마킹 방법에 관한 것이다.The present invention relates to a silicon wafer marking method, and more particularly, to a silicon wafer marking method suitable for marking a silicon wafer using a silicon etching solution having a nitric acid: fluoric acid: ultra pure water volume ratio of 2: 3: 2.
종래에는 반도체 제조시 웨이퍼 인식에 필요한 마킹(Marking)에는 크게 레이저를 이용한 레이저 마킹기기나 APR-280AN장비를 이용하여 필요시마다 산소나 금속을 조금씩 식각하는 방법으로 웨이퍼 마킹을 해왔다. 그러나 상기와 같이 종래에 웨이퍼 마킹을 위해서 레이저빔을 이용하여 웨이퍼 표면의 실리콘을 식각해서 필요한 문자 및 숫자를 마킹하는 레이저 마킹기기를 사용할 경우, 레이저 마킹 기기가 고가이므로, 거액의 경비를 소요하게 되므로 경제적 부담이 크고, 레이저에 의해 깍인 실리콘 단면이와 같이 각이지므로 불순물등이 식각된 부분에 들어갈 경우 쉽게 세척되지 않아 문제점을 발생시키고, 또한 포토 레지스터를 입힌 산소가 자라있거나 금속도포가 진행된 웨이퍼에 필요한 문자 및 숫자를 새겨 PR 오픈시키고 오픈된 부분의 산소나 금속을 식각해서 마킹하는 APT-280 AN 장비를 사용할 경우에는 식각 길이가 5000 ~7000Å정도로 얕게되므로, EPi층 및 금속도포 공정을 거칠 경우 쉽게 지워져 잘안보이는 문제점이 빈번하게 발생하여 8~12 레이어(Layer)를 거치는 동안 최소한 2~3번의 마킹작업을 되풀이 함으로 인해, 인적, 물적, 시간적 손실이 있을뿐만 아니라 마킹 작업을 여러번 하는 동안 고유번호가 바뀌어 중요한 데이타가 쓸모없이 되는 등의 문제점이 있어왔다.Conventionally, wafer marking has been performed by a method of etching oxygen or metal little by little using a laser marking device or APR-280AN equipment that uses laser for marking required for wafer recognition during semiconductor manufacturing. However, in the case of using a laser marking device that marks letters and numbers required by etching silicon on the wafer surface using a laser beam for wafer marking as described above, since the laser marking device is expensive, it requires a large cost. Economic burden is large, and silicon cross section cut by laser As it is angled like this, impurities are not easily washed when entering the etched part, which causes problems, and PR open by engraving the letters and numbers necessary on the wafer where oxygen with photoresist or metal coating proceeds. When using the APT-280 AN equipment that marks and etches oxygen or metal, the etching length is shallow as 5000 ~ 7000Å, so it is easily erased and difficult to see when the EPi layer and the metal coating process are performed frequently. By repeating at least two or three markings during the layer, there are problems such as loss of human, material, and time, as well as changing the unique number during several markings, which makes the important data useless. come.
따라서 상기에서 살펴본 것과같은 문제점을 해결하기 위하여 본 발명에서는 질산:불산:초순수 부피비율이 2:3:2인 실리콘 식각용액을 사용하여 웨이퍼 마킹을 하는 것으로, 도면을 참고로 상세히 설명하면, 우선 제1도에서 도시된 바와같이 실리콘 웨이퍼(2)가 있고, 전면에 Cr이 덮혀져 빛이 통과하지 못하게 된 Cr마스크(1)에 Cr으로 덮혀진 마스크(1) 하단에 세로 3mm, 가로 40mm정도의 직사각형의 크롬이 없는 공백부분을 형성시키고, 상기 공백 부분에 마킹을 위한 Cr문자 조각(4)을 고정시킬 수 있는 받침대(3)를 형성하고, 상기 받침대(3)는 크기가 세로 4mm, 가로 Amm, 두께 1mm가 되도록 구성되고, 양끝이 마스크 양단에 걸수 있도록 구성되어진다.Therefore, in order to solve the problems as described above, in the present invention, a silicon marking solution having a nitric acid: hydrofluoric acid: ultrapure water volume ratio of 2: 3: 2 is used for wafer marking. As shown in FIG. 1, there is a silicon wafer (2), and a Cr mask (1), which is covered with Cr on its front surface and prevents light from passing through, is 3 mm long and 40 mm wide at the bottom of the mask (1) covered with Cr. A rectangular chrome-free blank is formed, and the blank is formed with a pedestal 3 for fixing a piece of Cr character 4 for marking on the blank, and the pedestal 3 is 4 mm long and Amm wide. It is configured to have a thickness of 1mm, and both ends are configured to hang on both ends of the mask.
상기에서 살펴본 바와같이 구성된 실리콘 웨이퍼 마킹장치를 이용한 웨이퍼 마킹 방법을 살펴보면, 포토 레지스터가 도포되고 제1차 굽기(Soft Baking)가 끝난 웨이퍼 표면 플렛 존(Flat Zone)면에 원하는 문자 및 숫자가 새겨진 Cr조각을 Cr 받침대로 유입시켜 웨이퍼를 노광시키고, 노광시킨 웨이퍼를 질산:불산:초순수 부피비가 각각 2:3:2인 화학용액에 5~7초 동안 담그면, 실리콘 웨이퍼의 플랫존(Flat Zone)부분의 PR 오픈된 부분은 상기 식각 화학 용액에 접촉되어 실리콘이 약 2~3μm정도 에칭되며, 포토레니즈트가 덮혀진 전체 부위는 화학 용액과 격리되어 그래도 보존되어진다.Looking at the wafer marking method using the silicon wafer marking apparatus configured as described above, Cr with the desired letters and numbers on the surface of the flat surface of the wafer surface flat zone coated with a photoresist The wafer is exposed by exposing the flakes to the Cr pedestal, and the exposed wafer is immersed in a chemical solution having a nitric acid: fluoric acid: ultra pure water volume ratio of 2: 3: 2 for 5 to 7 seconds, respectively. The PR-opened portion of is contacted with the etching chemical solution and the silicon is etched by about 2 to 3μm, and the entire portion covered with the photorenist is isolated from the chemical solution and is still preserved.
화학용액에 5~7초 정도 담근 웨이퍼는 곧바로 세척하여 잔여 화학 용액을 모두 제거하고 PR스트립(Strip)하면 실리콘 웨이퍼 표면에 보존성이 강하고, 선명한 고유문자가 새겨지게 된다.Wafers soaked in chemical solution for 5 to 7 seconds are immediately washed to remove all remaining chemical solution and PR stripped, and the surface of the silicon wafer is highly preserved and clear original characters are engraved.
예로서, 4 웨이퍼일때 웨이퍼 두께는 52.5μm~50μm인데, 여기에 깊이가 2~3μm인 홈이 깊숙히 새겨져 8~12레이어 전공정을 거쳐도 고유보호가 선명하게 보이게 된다.For example, with four wafers, the wafer thickness ranges from 52.5 μm to 50 μm, in which grooves with depths of 2-3 μm are deeply inscribed, resulting in vivid protection of intrinsic protection even through the entire 8-12 layer process.
따라서 상기에서 살펴본 바와같이 본 발명에 따른 실리콘 웨이퍼 제조방법과 장치를 이용하면 레이저 마킹 기기와 같이 고가의 기기를 이용하지 않아도 되므로 장비도입에 필요한 경비가 절감되고 APT-280AN 장비 사용시 8~12레이어 전 공정이 끝날때까지 최소한 2~3번의 반부 마킹 작업을 함으로써 발생하는 물적, 인적, 경제적 손실이 절감되어 큰 이점이 있을뿐만 아니라 에칭 단면이둥글게 되어 세척도 용이하고 대량생산도 가능하게 하는 등의 큰 효과를 가지게 된다.Therefore, as described above, using the silicon wafer manufacturing method and apparatus according to the present invention does not require the use of expensive equipment such as laser marking equipment, thereby reducing the cost required for the introduction of equipment and using 8 to 12 layers when using APT-280AN equipment. At the end of the process, at least two or three half-marking operations are used to reduce the physical, human, and economic losses incurred. It is rounded to have a great effect, such as easy cleaning and mass production.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019900018349A KR0160971B1 (en) | 1990-11-13 | 1990-11-13 | Marking method of wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019900018349A KR0160971B1 (en) | 1990-11-13 | 1990-11-13 | Marking method of wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR920010807A KR920010807A (en) | 1992-06-27 |
| KR0160971B1 true KR0160971B1 (en) | 1999-02-01 |
Family
ID=19305969
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019900018349A KR0160971B1 (en) | 1990-11-13 | 1990-11-13 | Marking method of wafer |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR0160971B1 (en) |
-
1990
- 1990-11-13 KR KR1019900018349A patent/KR0160971B1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR920010807A (en) | 1992-06-27 |
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