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JPWO2021172408A1 - - Google Patents

Info

Publication number
JPWO2021172408A1
JPWO2021172408A1 JP2022503677A JP2022503677A JPWO2021172408A1 JP WO2021172408 A1 JPWO2021172408 A1 JP WO2021172408A1 JP 2022503677 A JP2022503677 A JP 2022503677A JP 2022503677 A JP2022503677 A JP 2022503677A JP WO2021172408 A1 JPWO2021172408 A1 JP WO2021172408A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022503677A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021172408A1 publication Critical patent/JPWO2021172408A1/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/02Physical, chemical or physicochemical properties
    • B32B7/025Electric or magnetic properties
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409Unipolar field-effect transistors
    • H01L29/66477Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
JP2022503677A 2020-02-26 2021-02-25 Pending JPWO2021172408A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020030767 2020-02-26
PCT/JP2021/007036 WO2021172408A1 (fr) 2020-02-26 2021-02-25 Dispositif à semi-conducteur et son procédé de fabrication

Publications (1)

Publication Number Publication Date
JPWO2021172408A1 true JPWO2021172408A1 (fr) 2021-09-02

Family

ID=77491885

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022503677A Pending JPWO2021172408A1 (fr) 2020-02-26 2021-02-25

Country Status (2)

Country Link
JP (1) JPWO2021172408A1 (fr)
WO (1) WO2021172408A1 (fr)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006060079A (ja) * 2004-08-20 2006-03-02 Ricoh Co Ltd 半導体層のパターン形成方法及び電子素子、電子素子アレイ、表示装置
KR101240657B1 (ko) * 2006-04-28 2013-03-08 삼성디스플레이 주식회사 표시장치와 그 제조방법
JP5380831B2 (ja) * 2007-12-07 2014-01-08 株式会社リコー 有機トランジスタ及びその製造方法
JP2009239033A (ja) * 2008-03-27 2009-10-15 Toppan Printing Co Ltd 有機薄膜トランジスタまたは/および有機薄膜トランジスタアレイの製造方法と有機薄膜トランジスタ、有機薄膜トランジスタアレイ
JP5875880B2 (ja) * 2012-01-31 2016-03-02 シチズンホールディングス株式会社 有機トランジスタ
KR101997073B1 (ko) * 2012-06-11 2019-10-02 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
JP2019153653A (ja) * 2018-03-02 2019-09-12 三菱ケミカル株式会社 有機半導体装置

Also Published As

Publication number Publication date
WO2021172408A1 (fr) 2021-09-02

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Legal Events

Date Code Title Description
A80 Written request to apply exceptions to lack of novelty of invention

Free format text: JAPANESE INTERMEDIATE CODE: A801

Effective date: 20220922

A80 Written request to apply exceptions to lack of novelty of invention

Free format text: JAPANESE INTERMEDIATE CODE: A80

Effective date: 20220922

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20240214