JPWO2019106931A1 - 半導体発光素子 - Google Patents
半導体発光素子 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 136
- 239000012535 impurity Substances 0.000 claims abstract description 36
- 150000004767 nitrides Chemical class 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims description 27
- 229910002601 GaN Inorganic materials 0.000 claims description 17
- 239000011777 magnesium Substances 0.000 claims description 13
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 8
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical group [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 4
- 239000000470 constituent Substances 0.000 claims description 4
- 229910021480 group 4 element Inorganic materials 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 239000011701 zinc Substances 0.000 claims description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 description 11
- 239000002019 doping agent Substances 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 229910002704 AlGaN Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 230000031700 light absorption Effects 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 239000003574 free electron Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
前記中間層は、活性層を有し、前記n型半導体層および前記p型半導体層の間に設けられる。
前記層構造は、少なくとも前記中間層のうち、前記活性層と前記p型半導体層との間の領域に残留ドナーを含む。
前記中間層は、前記活性層と前記p型半導体層との間の領域に前記残留ドナーを補償する不純物を含む。そして、前記中間層は、前記活性層と前記p型半導体層との間の領域における前記不純物の濃度が、前記p型半導体層における前記不純物の濃度より高くなるように構成される。
前記基板の主構成材料は、窒化ガリウム、窒化アルミニウム、サファイア、またはシリコンであってもよい。
(1)
n型半導体層と、
p型半導体層と、
活性層を有し、前記n型半導体層および前記p型半導体層の間に設けられた中間層と
を含む、窒化物半導体の層構造を備え、
前記層構造は、少なくとも前記中間層のうち、前記活性層と前記p型半導体層との間の領域に残留ドナーを含み、
前記中間層は、前記活性層と前記p型半導体層との間の領域に前記残留ドナーを補償する不純物を含み、前記活性層と前記p型半導体層との間の領域における前記不純物の濃度が、前記p型半導体層における前記不純物の濃度より高くなるように構成される
半導体発光素子。
(2)
前記(1)に記載の半導体発光素子であって、
前記p型半導体層は、アクセプタとしてマグネシウムを含む層である
半導体発光素子。
(3)
前記(1)または(2)に記載の半導体発光素子であって、
前記不純物は、炭素、鉄、および亜鉛のうち少なくとも1つ
半導体発光素子。
(4)
前記(1)または(2)に記載の半導体発光素子であって、
前記不純物は、2族および4族の元素のうち少なくとも1つである
半導体発光素子。
(5)
前記(1)から(4)のいうちいずれか1項に記載の半導体発光素子であって、
前記層構造が形成される基板をさらに具備し、
前記基板の主構成材料は、窒化ガリウム、窒化アルミニウム、サファイア、またはシリコンである
半導体発光素子。
(6)
前記(5)に記載の半導体発光素子であって、
前記基板は、窒化ガリウムで構成され、
前記基板の前記層構造が形成される主面の面方位は、cおよびm軸の両方に対して傾きを有する
半導体発光素子。
10…n型半導体層
20…中間層
21…活性層
23…p側ガイド層
30…p型半導体層
50…基板
100…半導体層
Claims (6)
- n型半導体層と、
p型半導体層と、
活性層を有し、前記n型半導体層および前記p型半導体層の間に設けられた中間層と
を含む、窒化物半導体の層構造を備え、
前記層構造は、少なくとも前記中間層のうち、前記活性層と前記p型半導体層との間の領域に残留ドナーを含み、
前記中間層は、前記活性層と前記p型半導体層との間の領域に前記残留ドナーを補償する不純物を含み、前記活性層と前記p型半導体層との間の領域における前記不純物の濃度が、前記p型半導体層における前記不純物の濃度より高くなるように構成される
半導体発光素子。 - 請求項1に記載の半導体発光素子であって、
前記p型半導体層は、アクセプタとしてマグネシウムを含む層である
半導体発光素子。 - 請求項1に記載の半導体発光素子であって、
前記不純物は、炭素、鉄、および亜鉛のうち少なくとも1つ
半導体発光素子。 - 請求項1に記載の半導体発光素子であって、
前記不純物は、2族および4族の元素のうち少なくとも1つである
半導体発光素子。 - 請求項1に記載の半導体発光素子であって、
前記層構造が形成される基板をさらに具備し、
前記基板の主構成材料は、窒化ガリウム、窒化アルミニウム、サファイア、またはシリコンである
半導体発光素子。 - 請求項5に記載の半導体発光素子であって、
前記基板は、窒化ガリウムで構成され、
前記基板の前記層構造が形成される主面の面方位は、cおよびm軸の両方に対して傾きを有する
半導体発光素子。
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JPH09321389A (ja) * | 1996-03-26 | 1997-12-12 | Toshiba Corp | p型半導体膜および半導体素子 |
WO2007013257A1 (ja) * | 2005-07-29 | 2007-02-01 | Matsushita Electric Industrial Co., Ltd. | 窒化物系半導体素子 |
WO2011055774A1 (ja) * | 2009-11-06 | 2011-05-12 | 日本碍子株式会社 | 半導体素子用エピタキシャル基板、半導体素子、および半導体素子用エピタキシャル基板の製造方法 |
JP2014103384A (ja) * | 2012-11-19 | 2014-06-05 | Genesis Photonics Inc | 窒化物半導体構造及び半導体発光デバイス |
JP2016531442A (ja) * | 2013-08-22 | 2016-10-06 | コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ | 活性領域がInNの層を含む発光ダイオード |
JP2016219587A (ja) * | 2015-05-20 | 2016-12-22 | ソニー株式会社 | 半導体光デバイス |
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JP3269344B2 (ja) * | 1995-08-21 | 2002-03-25 | 松下電器産業株式会社 | 結晶成長方法および半導体発光素子 |
JP2015159193A (ja) * | 2014-02-24 | 2015-09-03 | ソニー株式会社 | 半導体発光素子およびその製造方法、並びに半導体発光素子用ウエハ |
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2018
- 2018-09-27 JP JP2019557028A patent/JPWO2019106931A1/ja active Pending
- 2018-09-27 DE DE112018006151.5T patent/DE112018006151T5/de active Pending
- 2018-09-27 WO PCT/JP2018/035965 patent/WO2019106931A1/ja active Application Filing
- 2018-09-27 US US16/766,469 patent/US20200381898A1/en not_active Abandoned
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JPH09321389A (ja) * | 1996-03-26 | 1997-12-12 | Toshiba Corp | p型半導体膜および半導体素子 |
WO2007013257A1 (ja) * | 2005-07-29 | 2007-02-01 | Matsushita Electric Industrial Co., Ltd. | 窒化物系半導体素子 |
WO2011055774A1 (ja) * | 2009-11-06 | 2011-05-12 | 日本碍子株式会社 | 半導体素子用エピタキシャル基板、半導体素子、および半導体素子用エピタキシャル基板の製造方法 |
JP2014103384A (ja) * | 2012-11-19 | 2014-06-05 | Genesis Photonics Inc | 窒化物半導体構造及び半導体発光デバイス |
JP2016531442A (ja) * | 2013-08-22 | 2016-10-06 | コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ | 活性領域がInNの層を含む発光ダイオード |
JP2016219587A (ja) * | 2015-05-20 | 2016-12-22 | ソニー株式会社 | 半導体光デバイス |
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