JPWO2009078335A1 - Novel sulfonate and radiation-sensitive resin composition - Google Patents

Abstract

It is a sulfonate represented by the following general formula (1). (Rf is each independently a fluorine atom or a perfluoroalkyl group having 1 to 3 carbon atoms, R1 is a linear or branched alkyl group having 1 to 8 carbon atoms, R2 is independently a hydrogen atom, a fluorine atom, or a fluorine atom. 1 represents a linear or branched alkyl group having 1 to 8 carbon atoms which may be substituted with m, m represents an integer of 0 to 3, n represents an integer of 1 to 3, Mk + represents a k-valent cation, k represents an integer of 1 to 4.)

Description

  The present invention relates to a novel sulfonate and a radiation-sensitive resin composition, and more particularly, far ultraviolet rays such as KrF excimer laser, ArF excimer laser, F2 excimer laser or EUV (extreme ultraviolet), synchrotron radiation, etc. Using various types of radiation such as charged particle beams such as X-rays, electron beams, etc., the refractive index at the exposure wavelength is dry exposure under air, nitrogen, or vacuum, or between the lens and the photoresist film. Radiation-sensitive acid of positive-type and negative-type radiation-sensitive resin compositions used as chemically amplified resists useful for microfabrication including immersion exposure that irradiates through an immersion exposure liquid higher than air The present invention relates to a novel sulfonic acid salt suitable as a generator and positive and negative radiation-sensitive resin compositions containing the acid generator.

  In the field of microfabrication represented by the manufacture of integrated circuit elements, a lithography process capable of microfabrication at a level of 0.20 μm or less is recently required to obtain a higher degree of integration. However, in the conventional lithography process, near ultraviolet rays such as i rays are generally used as radiation, and it is said that fine processing at the subquarter micron level is extremely difficult with this near ultraviolet rays.

  Therefore, in order to enable microfabrication at a level of 0.20 μm or less, use of radiation having a shorter wavelength is being studied. Examples of such short-wavelength radiation include an emission line spectrum of a mercury lamp, deep ultraviolet rays typified by an excimer laser, X-rays, and electron beams. Among these, a KrF excimer laser (wavelength 248 nm) is particularly preferable. ), ArF excimer laser (wavelength 193 nm), F2 excimer laser (wavelength 157 nm), EUV (wavelength 13 nm, etc.), electron beam, and the like are attracting attention.

  As a radiation-sensitive resin composition suitable for short-wave radiation, a component having an acid-dissociable functional group and a radiation-sensitive acid generator that generates an acid upon irradiation with radiation (hereinafter referred to as “exposure”) Many compositions utilizing the chemical amplification effect between them (hereinafter referred to as “chemically amplified radiation-sensitive composition”) have been proposed.

  As a chemically amplified radiation sensitive composition, for example, Patent Document 1 contains a polymer having a carboxylic acid t-butyl ester group or a phenol t-butyl carbonate group and a radiation sensitive acid generator. Has been proposed. This composition is an acidic group in which a t-butyl ester group or t-butyl carbonate group present in a polymer is dissociated by the action of an acid generated by exposure, and the polymer is composed of a carboxyl group or a phenolic hydroxyl group. As a result, the phenomenon that the exposed region of the resist film becomes readily soluble in an alkali developer is utilized.

  By the way, properties required for a radiation-sensitive acid generator in a chemically amplified radiation-sensitive composition are excellent in transparency to radiation, have a high quantum yield in acid generation, and have a sufficiently strong acid to be generated. For example, the boiling point of the acid is sufficiently high, and the diffusion distance of the generated acid in the resist film (hereinafter referred to as “diffusion length”) is appropriate.

  Recently, not only microfabrication but also performance that enables processing of more complex patterns is required. Performance such as balance of focal depth between isolated pattern and dense pattern, good minimum pre-collapse dimensions, LWR, etc. is needed.

Among these, with regard to items other than transparency and quantum yield in acid generation, the structure of the anion moiety is important in the ionic radiation-sensitive acid generator, and it has a normal sulfonyl structure or sulfonate structure. In the nonionic radiation-sensitive acid generator, the structure of the sulfonyl moiety is important. For example, in the case of a radiation sensitive acid generator having a perfluoroalkanesulfonic acid structure that is often used, the generated acid is a sufficiently strong acid, and the resolution as a photoresist is sufficiently high, but the fluorine content is high. High compatibility with resins having acid-dissociable groups, resulting in non-uniform distribution of acid-dissociable group-containing resin and radiation-sensitive acid generator in the resist film. There is a drawback that dimensions before collapse, LWR, and the like deteriorate. On the other hand, alkane sulfonic acid, which is highly compatible with resins having acid-dissociable groups, such as camphor sulfonic acid, has insufficient acid strength, resulting in insufficient sensitivity and reduced resolution. To do. Recently, a sulfonic acid having a fluorine-containing electron-withdrawing group only at the α-position of the sulfonyl group has been developed, but the performance for processing a more complicated pattern is insufficient, and improvement is desired. Yes. For example, the balance of the depth of focus of the isolated pattern and the dense pattern, the dimension before the minimum collapse, and the balance of LWR can be mentioned. Of these, the depth of focus of the isolated pattern and the dimension before minimum collapse tend to be better as the acid diffusion length is longer.However, the longer the acid diffusion, the worse the depth of focus of the dense pattern. A radiation sensitive acid generator having good compatibility with a resin having a dissociable group and having an appropriate acid diffusion length is strongly desired.
JP-B-2-27660

  The subject of the present invention is excellent in transparency to actinic radiation, such as KrF excimer laser, ArF excimer laser, F2 excimer laser or EUV, represented by far ultraviolet rays and electron beams, or in response to these actinic radiations, or In a radiation-sensitive resin composition useful as a chemically amplified resist that can generate an acid having sufficiently high acidity and boiling point by heating, and has a good balance of depth of focus between isolated and dense patterns, minimum collapse size, and LWR. It is an object of the present invention to provide a novel sulfonate that is extremely suitable as a radiation-sensitive acid generator, and positive and negative radiation-sensitive resin compositions containing the sulfonate.

  As a result of intensive studies to achieve the above-mentioned problems, the present inventors have found that the above-mentioned problems can be achieved by the compounds shown below, and have completed the present invention. That is, according to the present invention, the following sulfonates and the like are provided.

[1] A sulfonate represented by the following general formula (1).

(R ^f is each independently a fluorine atom or a perfluoroalkyl group having 1 to 3 carbon atoms, R ¹ is a linear or branched alkyl group having 1 to 8 carbon atoms, R ² is independently a hydrogen atom, a fluorine atom, Or a linear or branched alkyl group having 1 to 8 carbon atoms which may be substituted with a fluorine atom, m represents an integer of 0 to 3, n represents an integer of 1 to 3. M ^{k +} represents a positive k-valent atom. Represents an ion, and k represents an integer of 1 to 4.)

[2] The sulfonate according to [1], wherein R ² is a hydrogen atom or a linear or branched alkyl group having 1 to 8 carbon atoms.

[3] The sulfonate according to the above [1], wherein R ² is a hydrogen atom and R ^f is a fluorine atom.

[4] The sulfonate according to the above [1], wherein the cation is a sulfonium cation or an iodonium cation.

[5] A radiation sensitive resin composition comprising the sulfonate according to any one of [1] to [4] and a resin containing an acid dissociable group.

[6] The radiation sensitive resin composition according to [5], wherein the resin containing an acid dissociable group includes a repeating unit represented by the following general formula (8).

(In the general formula (8), R ¹⁵ represents a hydrogen atom or a monovalent organic group, a plurality of R ¹⁵ may be the same as or different from each other, and c and d are each an integer of 1 to 3. )

[7] The resin containing an acid dissociable group is at least one of a repeating unit represented by the following general formula (9) and a repeating unit represented by the following general formula (10), and the following general formula (11). The radiation sensitive resin composition according to the above [5], comprising a repeating unit represented by the formula:

(In General Formula (9), General Formula (10) and General Formula (11), R ¹⁶ , R ¹⁸ and R ¹⁹ each independently represent a hydrogen atom or a methyl group. In General Formula (9), each R ¹⁷ is independently of each other a hydrogen atom, a hydroxyl group, a cyano group, or —COOR ²¹ (where R ²¹ is a hydrogen atom, a linear or branched alkyl group having 1 to 4 carbon atoms, or a cyclohexane having 3 to 20 carbon atoms). In general formula (11), each R ²⁰ is independently a monovalent alicyclic hydrocarbon group having 4 to 20 carbon atoms or a derivative thereof, or a straight chain having 1 to 4 carbon atoms. A chain or branched alkyl group, and at least one of R ²⁰ is the alicyclic hydrocarbon group or a derivative thereof, or any two R ²⁰ are bonded to each other, and ing Atom together form a divalent alicyclic hydrocarbon group or a derivative thereof having 4 to 20 carbon atoms, the remaining R ²⁰ is 4 alkyl group or a carbon number of straight-chain or branched having 1 to 4 carbon atoms 20 monovalent alicyclic hydrocarbon groups or derivatives thereof.

  The compound of the present invention is excellent in transparency to actinic radiation such as KrF excimer laser, ArF excimer laser, F2 excimer laser or EUV, represented by far ultraviolet rays and electron beams, and is sensitive to these actinic radiations. In a radiation-sensitive resin composition useful as a chemically amplified resist that can generate an acid having sufficiently high acidity and boiling point by heating, and has a good balance of depth of focus between isolated and dense patterns, minimum collapse size, and LWR. It is extremely suitable as a radiation sensitive acid generator.

  BEST MODE FOR CARRYING OUT THE INVENTION The best mode for carrying out the present invention will be described below, but the present invention is not limited to the following embodiment, and is based on the ordinary knowledge of those skilled in the art without departing from the gist of the present invention. It should be understood that modifications and improvements as appropriate to the following embodiments also fall within the scope of the present invention.

  The sulfonate of the present invention is represented by the following general formula (1).

(R ^f is each independently a fluorine atom or a perfluoroalkyl group having 1 to 3 carbon atoms, R ¹ is a linear or branched alkyl group having 1 to 8 carbon atoms, R ² is independently a hydrogen atom, a fluorine atom, Or a linear or branched alkyl group having 1 to 8 carbon atoms which may be substituted with a fluorine atom, m represents an integer of 0 to 3, n represents an integer of 1 to 3. M ^{k +} represents a positive k-valent atom. Represents an ion, and k represents an integer of 1 to 4.)

In the general formula (1), as the monovalent onium cation of M ⁺ in the case of k = 1, for example, onium cations such as O, S, Se, N, P, As, Sb, Cl, Br, and I can be used. Can be mentioned. Of these onium cations, sulfonium cations or iodonium cations are preferred.

  Since the sulfonate (1) of the present invention has a fluorine-containing electron withdrawing group strong at the α-position of the sulfonyl group in the structure (1), the acidity of the generated acid is high and the boiling point is sufficiently high. Therefore, it is difficult to volatilize in the photolithography process, and it has an appropriate length of alkyl chain, so it has an appropriate diffusion length in the resist film, the balance between the depth of focus of the isolated pattern and the dense pattern and the minimum collapse size, LWR balance has good performance.

In the general formula (1), among the monovalent onium cations of M ⁺ , examples of the onium cation of S include those represented by the following general formula (i). For example, what is represented by the following general formula (ii) can be mentioned.

(In General Formula (i), R ³ , R ⁴ and R ⁵ are each independently a substituted or unsubstituted linear or branched alkyl group having 1 to 10 carbon atoms or a substituted or unsubstituted carbon number of 6 Or an aryl group of ˜18, or any two or more of R ³ , R ⁴ and R ⁵ are bonded to each other to form a ring together with the sulfur atom in the formula.)

(In the general formula (ii), R ⁶ and R ⁷ are each independently a substituted or unsubstituted linear or branched alkyl group having 1 to 10 carbon atoms, or a substituted or unsubstituted carbon group having 6 to 18 carbon atoms. Represents an aryl group, or R ⁶ and R ⁷ are bonded to each other to form a ring together with the iodine atom in the formula.)

The monovalent onium cation moiety of M ⁺ is described in, for example, Advances in Polymer Science, Vol. 62, p. It can be produced according to the general method described in 1-48 (1984).

  Preferable monovalent onium cations include, for example, sulfonium cations of the following formulas (i-1) to (i-64), iodonium cations of the following formulas (ii-1) to (ii-39), and the like. .

  Among these monovalent onium cations, for example, formula (i-1), formula (i-2), formula (i-6), formula (i-8), formula (i-13), formula (i) -19), formula (i-25), formula (i-27), formula (i-29), formula (i-33), formula (i-51) or sulfonium cation of formula (i-54); (Ii-1) or an iodonium cation of the formula (ii-11) is preferred.

Production method:
The sulfonate (1) is described in, for example, Advances in Polymer Science, Vol. 62, p. 1-48 (1984) and Inorganic Chemistry, Vol. 32, p. It can be synthesized according to the general method described in 5007-5010 (1993). That is, as shown in the following reaction formula [1], the corresponding precursor compound (1a) is converted to a sulfinate (1b) by reacting with sodium dithionite in the presence of an inorganic base, By oxidizing this with an oxidizing agent such as hydrogen peroxide, it can be converted into the sulfonate (1c), and then produced by carrying out an ion exchange reaction with the counter ion exchange precursor M ⁺ Z ^−. .

[In Reaction Formula [1], Z represents a detachable monovalent group, and Z ⁻ represents a monovalent anion. ]

  Examples of the detachable monovalent group of Z in the precursor compound (1a) include halogen atoms such as chlorine atom, bromine atom and iodine atom, methanesulfonate group, p-toluenesulfonate group and the like. Preferably, it is a chlorine atom, a bromine atom, an iodine atom or the like.

  In the reaction of the precursor compound (1a) with sodium dithionite, the molar ratio of sodium dithionite to the precursor compound (1a) is usually 0.01 to 100, preferably 1.0 to 10.

  Examples of the inorganic base used in the reaction include lithium carbonate, sodium carbonate, potassium carbonate, lithium hydrogen carbonate, sodium hydrogen carbonate, potassium hydrogen carbonate and the like, preferably sodium hydrogen carbonate, potassium hydrogen carbonate and the like. . These inorganic bases can be used alone or in admixture of two or more. The molar ratio of the inorganic base to sodium dithionite is usually 1.0 to 10.0, preferably 2.0 to 4.0.

  This reaction is preferably performed in a mixed solvent of an organic solvent and water. The organic solvent is preferably a solvent having good compatibility with water, such as lower alcohols, tetrahydrofuran, N, N-dimethylformamide, N, N-dimethylacetamide, acetonitrile, dimethylsulfoxide, and more preferably N , N-dimethylacetamide, acetonitrile, dimethyl sulfoxide, etc., particularly preferably acetonitrile and dimethyl sulfoxide. These organic solvents can be used alone or in admixture of two or more.

  The use ratio of the organic solvent is usually 5 parts by mass or more, preferably 10 parts by mass or more, and more preferably 20 to 90 parts by mass with respect to 100 parts by mass in total of the organic solvent and water. The usage-amount with respect to 100 mass parts of precursor compounds (1a) of the said mixed solvent is 5-100 mass parts normally, Preferably it is 10-100 mass parts, More preferably, it is 20-90 mass parts.

  The reaction temperature is usually 40 to 200 ° C., preferably 60 to 120 ° C., and the reaction time is usually 0.5 to 72 hours, preferably 2 to 24 hours. When the reaction temperature is higher than the boiling point of the organic solvent or water, a pressure vessel such as an autoclave is used.

  In the oxidation reaction of sulfinate (1b), as an oxidizing agent, besides hydrogen peroxide, metachloroperbenzoic acid, t-butyl hydroperoxide, potassium peroxysulfate, potassium permanganate, sodium perborate, sodium metaiodide Sodium borate, chromic acid, sodium dichromate, halogen, iodobenzene dichloride, iodobenzene diacetate, osmium oxide (VII), ruthenium oxide (VII), sodium hypochlorite, sodium chlorite, oxygen gas, ozone gas Among them, hydrogen peroxide, metachloroperbenzoic acid, t-butyl hydroperoxide and the like are preferable. These oxidizing agents can be used alone or in admixture of two or more. The molar ratio of the oxidizing agent to the sulfinate (1b) is usually 1.0 to 10.0, preferably 1.5 to 4.0.

  In addition, a transition metal catalyst can be used in combination with the oxidizing agent. Examples of the transition metal catalyst include disodium tungstate, iron (III) chloride, ruthenium (III) chloride, selenium (IV) oxide, etc., preferably disodium tungstate. These transition metal catalysts can be used alone or in admixture of two or more. The molar ratio of the transition metal catalyst to the sulfinate (1b) is usually 0.001 to 2.0, preferably 0.01 to 1.0, and more preferably 0.03 to 0.5.

  Furthermore, in addition to the oxidizing agent and the transition metal catalyst, a buffering agent may be used in combination for the purpose of adjusting the pH of the reaction solution. Examples of the buffer include disodium hydrogen phosphate, sodium dihydrogen phosphate, dipotassium hydrogen phosphate, and potassium dihydrogen phosphate. These buffering agents can be used alone or in admixture of two or more. The molar ratio of the buffer to the sulfinate (1b) is usually 0.01 to 2.0, preferably 0.03 to 1.0, and more preferably 0.05 to 0.5.

  This reaction is usually performed in a reaction solvent. The reaction solvent is preferably water or an organic solvent such as lower alcohols, tetrahydrofuran, N, N-dimethylformamide, N, N-dimethylacetamide, acetonitrile, dimethyl sulfoxide, acetic acid, trifluoroacetic acid, and more preferably. Is water, methanol, N, N-dimethylacetamide, acetonitrile, dimethyl sulfoxide and the like, and particularly preferably water and methanol. These organic solvents can be used alone or in admixture of two or more. Further, if necessary, an organic solvent and water can be used in combination, and the use ratio of the organic solvent in that case is usually 5 parts by mass or more, preferably 100 parts by mass in total of the organic solvent and water. Is 10 parts by mass or more, more preferably 20 to 90 parts by mass. The usage-amount with respect to 100 mass parts of sulfinate (1b) of a reaction solvent is 5-100 mass parts normally, Preferably it is 10-100 mass parts, More preferably, it is 20-50 mass parts.

  The reaction temperature is usually 0 to 100 ° C., preferably 5 to 60 ° C., more preferably 5 to 40 ° C., and the reaction time is usually 0.5 to 72 hours, preferably 2 to 24 hours.

  The ion exchange reaction of sulfonate (1c) is described, for example, in J. Org. Photopolym. Sci. Tech. , P. It can be carried out according to the general method described in 571-576 (1998), the method such as ion exchange chromatography, or the method described in each synthesis example described later.

Examples of the monovalent anion of Z ⁻ in the reaction formula [1] include F ⁻ , Cl ⁻ , Br ⁻ , I ⁻ , perchlorate ion, hydrogen sulfate ion, dihydrogen phosphate ion, and tetrafluoroboric acid. Ion, aliphatic sulfonate ion, aromatic sulfonate ion, trifluoromethanesulfonate ion, fluorosulfonate ion, hexafluorophosphate ion, hexachloroantimonate ion, etc., preferably Cl ⁻ , Br ^- a hydrogen sulfate ion, a tetrafluoroborate ion, an aliphatic sulfonate ion and the like, more preferably Cl ^-, Br ^-, a hydrogen sulfate ion or the like. The molar ratio of the counter ion exchange precursor to the sulfonate (1c) is usually 0.1 to 10.0, preferably 0.3 to 4.0, and more preferably 0.7 to 2.0. is there.

  This reaction is usually performed in a reaction solvent. The reaction solvent is preferably water or an organic solvent such as lower alcohols, tetrahydrofuran, N, N-dimethylformamide, N, N-dimethylacetamide, acetonitrile, dimethyl sulfoxide, more preferably water, methanol, N , N-dimethylacetamide, acetonitrile, dimethyl sulfoxide, etc., particularly preferably water. These organic solvents can be used alone or in admixture of two or more. Further, if necessary, water and an organic solvent can be used in combination, and the use ratio of the organic solvent in this case is usually 5 parts by mass or more, preferably 100 parts by mass in total of water and the organic solvent. Is 10 parts by mass or more, more preferably 20 to 90 parts by mass. The usage-amount with respect to 100 mass parts of counter-exchange precursors of a reaction solvent is 5-100 mass parts normally, Preferably it is 10-100 mass parts, More preferably, it is 20-50 mass parts.

  The reaction temperature is usually 0 to 80 ° C., preferably 5 to 30 ° C., and the reaction time is usually 10 minutes to 6 hours, preferably 30 minutes to 2 hours.

  The sulfonate (1) thus obtained can be purified by extraction with an organic solvent. Examples of organic solvents used for purification include organic solvents that are not miscible with water, such as esters such as ethyl acetate and n-butyl acetate; ethers such as diethyl ether; alkyl halides such as methylene chloride and chloroform. Is preferred. These organic solvents can be used alone or in admixture of two or more.

  The precursor compound (1a) can be converted to the precursor compound (2b) by adding a corresponding fluorine-containing compound to the corresponding olefin compound (2a), for example, as shown in the following reaction formula [2]. After the halogenated transfer reaction, the precursor compound (1a) can be produced by using an organic copper reagent.

Positive-type radiation-sensitive resin composition and negative-type radiation-sensitive resin composition:
[Radiosensitive acid generator]
The positive-type radiation-sensitive resin composition and the negative-type radiation-sensitive resin composition of the present invention are blended with a radiation-sensitive acid generator composed of a sulfonate having the structure of the general formula (1). In the positive radiation sensitive resin composition and the negative radiation sensitive resin composition of the present invention, the radiation sensitive acid generator can be used alone or in admixture of two or more.

  In the positive-type radiation-sensitive resin composition and the negative-type radiation-sensitive resin composition of the present invention, the amount of the radiation-sensitive acid generator comprising the sulfonate having the structure of the general formula (1) is used as the radiation-sensitive property. Although it varies depending on the type of the acid generator and other acid generators used in some cases, it is usually 0.1 to 20 parts by weight, preferably 100 parts by weight, preferably 100 parts by weight of the acid-dissociable group-containing resin or alkali-soluble resin. Is 0.1 to 15 parts by mass, more preferably 0.2 to 12 parts by mass. In this case, if the amount of the radiation-sensitive acid generator used is less than 0.1 parts by mass, the desired effect of the present invention may not be sufficiently expressed. In addition, the pattern shape, heat resistance and the like may be reduced.

  The positive-type radiation-sensitive resin composition and the negative-type radiation-sensitive resin composition of the present invention include a radiation-sensitive acid generator (hereinafter referred to as a radiation-sensitive acid generator other than the radiation-sensitive acid generator comprising the sulfonate salt of the general formula (1)). , "Other acid generators") can be used in combination.

  Examples of other acid generators include onium salt compounds, sulfone compounds, sulfonic acid ester compounds, sulfonimide compounds, diazomethane compounds, disulfonylmethane compounds, oxime sulfonate compounds, hydrazine sulfonate compounds, and the like.

  Examples of the onium salt compounds include iodonium salts, sulfonium salts (including tetrahydrothiophenium salts), phosphonium salts, diazonium salts, ammonium salts, pyridinium salts, and the like. Examples of the sulfone compound include β-ketosulfone, β-sulfonylsulfone, and α-diazo compounds thereof. Examples of the sulfonic acid ester compounds include alkyl sulfonic acid esters, haloalkyl sulfonic acid esters, aryl sulfonic acid esters, and imino sulfonates. Moreover, as said sulfonimide compound, the compound represented by following General formula (2) can be mentioned, for example.

(In the general formula (2), R ⁸ represents a divalent organic group, and R ⁹ represents a monovalent organic group.)

In the general formula (2), examples of R ⁸ include a methylene group, a linear or branched alkylene group having 2 to 20 carbon atoms, an aralkylene group having 7 to 20 carbon atoms, a difluoromethylene group, and a carbon number of 2 to 2. 20 linear or branched perfluoroalkylene groups, cyclohexylene groups, phenylene groups, divalent groups having a norbornane skeleton, or aryl groups having 6 or more carbon atoms or alkoxyl groups having 1 or more carbon atoms. And the like can be mentioned.

R ⁹ is, for example, a linear or branched alkyl group having 1 to 10 carbon atoms, a linear or branched perfluoroalkyl group having 1 to 10 carbon atoms, or a perfluoroalkyl group having 3 to 10 carbon atoms. Examples thereof include a fluorocycloalkyl group, a monovalent hydrocarbon group having 7 to 15 carbon atoms having a bicyclo ring, and an aryl group having 6 to 12 carbon atoms.

  Moreover, as said diazomethane compound, the compound represented by following General formula (3) can be mentioned, for example.

(In the general formula (3), each R ¹⁰ independently represents a linear or branched alkyl group, cycloalkyl group, aryl group, halogen-substituted alkyl group, halogen-substituted cycloalkyl group, halogen-substituted aryl group, etc. Represents a monovalent group.)

  Moreover, as said disulfonylmethane compound, the compound represented by following General formula (4) can be mentioned, for example.

(In the general formula (4), each R ¹¹ is independently a linear or branched monovalent aliphatic hydrocarbon group, a cycloalkyl group, an aryl group, an aralkyl group, or a monovalent group having a hetero atom. Wherein T and U are each independently a monovalent group having an aryl group, a hydrogen atom, a linear or branched monovalent aliphatic hydrocarbon group, a cycloalkyl group, an aralkyl group or a heteroatom. Is another organic group, and at least one of T and U is an aryl group, or T and U are connected to each other to form a monocyclic or polycyclic ring having at least one unsaturated bond Alternatively, T and U are connected to each other to form a group represented by the following formula (5).)

(However, T ′ and U ′ each independently represent a hydrogen atom, a halogen atom, a linear or branched alkyl group, a cycloalkyl group, an aryl group or an aralkyl group, or the same or different carbon atoms. The bonded T ′ and U ′ are connected to each other to form a carbon monocyclic structure, and a plurality of T ′ and a plurality of U ′ may be the same or different from each other, and b is 2 to 10 Is an integer.)

  Moreover, as an oxime sulfonate compound, the compound etc. which are represented by the following general formula (6-1) or general formula (6-2) can be mentioned, for example.

(In General Formula (6-1) and General Formula (6-2), R ¹² and R ¹³ each independently represent a monovalent organic group, and a plurality of R ¹² present in General Formula (6-2). And a plurality of R ¹³ may be the same or different from each other.)

In General Formula (6-1) and General Formula (6-2), specific examples of R ¹² include a methyl group, an ethyl group, an n-propyl group, a phenyl group, and a p-tolyl group.

Specific examples of R ¹³ include a phenyl group, a p-tolyl group, and a 1-naphthyl group.

  Moreover, as a hydrazine sulfonate compound, the compound etc. which are represented by the following general formula (7-1) or general formula (7-2) can be mentioned, for example.

(In General Formula (7-1) and General Formula (7-2), R ¹⁴ represents a monovalent organic group, and a plurality of R ¹⁴ present in General Formula (7-2) may be the same or different from each other. May be good.)

In General Formula (7-1) and General Formula (7-2), specific examples of R ¹⁴ include methyl group, ethyl group, n-propyl group, phenyl group, p-tolyl group, trifluoromethyl group, nonafluoro group. -N-butyl group and the like can be mentioned.

  Of these other acid generators, one or more of the group of onium salt compounds, sulfonimide compounds and diazomethane compounds are preferred.

  Other particularly preferred acid generators include, for example, diphenyliodonium trifluoromethanesulfonate, diphenyliodonium nonafluoro-n-butanesulfonate, diphenyliodonium p-toluenesulfonate, diphenyliodonium 10-camphorsulfonate, diphenyliodonium 2-trifluoromethylbenzene. Sulfonate, diphenyliodonium 4-trifluoromethylbenzenesulfonate, diphenyliodonium 2,4-difluorobenzenesulfonate, diphenyliodonium 1,1,2,2-tetrafluoro-2- (norbornan-2-yl) ethanesulfonate, diphenyliodonium 2 -(5-t-butoxycarbonyloxybicyclo [2.2.1] heptan-2-yl) -1,1, , 2-tetrafluoroethanesulfonate, diphenyliodonium 2- (6-tert-butoxycarbonyloxybicyclo [2.2.1] heptan-2-yl) -1,1,2,2-tetrafluoroethanesulfonate, diphenyliodonium 1,1-difluoro-2- (bicyclo [2.2.1] heptan-2-yl) ethanesulfonate, bis (4-t-butylphenyl) iodonium trifluoromethanesulfonate, bis (4-t-butylphenyl) iodonium Nonafluoro-n-butanesulfonate, bis (4-t-butylphenyl) iodonium p-toluenesulfonate, bis (4-t-butylphenyl) iodonium 10-camphorsulfonate, bis (4-t-butylphenyl) iodonium 2- Trifluoromethyl Zensulfonate, bis (4-tert-butylphenyl) iodonium 4-trifluoromethylbenzenesulfonate, bis (4-tert-butylphenyl) iodonium 2,4-difluorobenzenesulfonate, bis (4-tert-butylphenyl) iodonium 1 , 1,2,2-tetrafluoro-2- (norbornan-2-yl) ethanesulfonate, bis (4-tert-butylphenyl) iodonium 1,1-difluoro-2- (bicyclo [2.2.1] heptane -2-yl) ethanesulfonate,

  Triphenylsulfonium trifluoromethanesulfonate, triphenylsulfonium nonafluoro-n-butanesulfonate, triphenylsulfonium p-toluenesulfonate, triphenylsulfonium 10-camphorsulfonate, triphenylsulfonium 2-trifluoromethylbenzenesulfonate, triphenylsulfonium 4- Trifluoromethylbenzenesulfonate, triphenylsulfonium 2,4-difluorobenzenesulfonate, triphenylsulfonium 1,1,2,2-tetrafluoro-2- (norbornan-2-yl) ethanesulfonate, triphenylsulfonium 2- (5 -T-Butoxycarbonyloxybicyclo [2.2.1] heptan-2-yl) -1,1,2,2-tetrafluoroe Sulfonate, triphenylsulfonium 2- (6-t-butoxycarbonyloxybicyclo [2.2.1] heptan-2-yl) -1,1,2,2-tetrafluoroethanesulfonate, triphenylsulfonium 2- ( 5-Pivaloyloxybicyclo [2.2.1] heptan-2-yl) -1,1,2,2-tetrafluoroethanesulfonate, triphenylsulfonium 2- (6-pivaloyloxybicyclo [2. 2.1] heptan-2-yl) -1,1,2,2-tetrafluoroethanesulfonate, triphenylsulfonium 2- (5-hydroxybicyclo [2.2.1] heptan-2-yl) -1, 1,2,2-tetrafluoroethanesulfonate, triphenylsulfonium 2- (6-hydroxybicyclo [2.2.1] Heptane-2-yl) 1,1,2,2-tetrafluoroethane sulfonate,

  Triphenylsulfonium 2- (5-methanesulfonyloxybicyclo [2.2.1] heptan-2-yl) -1,1,2,2-tetrafluoroethanesulfonate, triphenylsulfonium 2- (6-methanesulfonyloxy) Bicyclo [2.2.1] heptan-2-yl) -1,1,2,2-tetrafluoroethanesulfonate, triphenylsulfonium 2- (5-i-propanesulfonyloxybicyclo [2.2.1] heptane -2-yl) -1,1,2,2-tetrafluoroethanesulfonate, triphenylsulfonium 2- (6-i-propanesulfonyloxybicyclo [2.2.1] heptan-2-yl) -1,1 , 2,2-tetrafluoroethanesulfonate, triphenylsulfonium 2- (5-n-hexanesulfonate) Oxybicyclo [2.2.1] heptan-2-yl) -1,1,2,2-tetrafluoroethanesulfonate, triphenylsulfonium 2- (6-n-hexanesulfonyloxybicyclo [2.2.1] Heptan-2-yl) -1,1,2,2-tetrafluoroethanesulfonate, triphenylsulfonium 2- (5-oxobicyclo [2.2.1] heptan-2-yl) -1,1,2, 2-tetrafluoroethanesulfonate, triphenylsulfonium 2- (6-oxobicyclo [2.2.1] heptan-2-yl) -1,1,2,2-tetrafluoroethanesulfonate, triphenylsulfonium 1,1 -Difluoro-2- (bicyclo [2.2.1] heptan-2-yl) ethanesulfonate,

  1- (4-n-butoxynaphthalen-1-yl) tetrahydrothiophenium trifluoromethanesulfonate, 1- (4-n-butoxynaphthalen-1-yl) tetrahydrothiophenium nonafluoro-n-butanesulfonate, (4-n-butoxynaphthalen-1-yl) tetrahydrothiophenium 1,1,2,2-tetrafluoro-2- (norbornan-2-yl) ethanesulfonate, 1- (4-n-butoxynaphthalene-1) -Yl) tetrahydrothiophenium 2- (5-t-butoxycarbonyloxybicyclo [2.2.1] heptan-2-yl) -1,1,2,2-tetrafluoroethanesulfonate, 1- (4- n-Butoxynaphthalen-1-yl) tetrahydrothiophenium 2- (6-t-butoxycarbonyl) Xibicyclo [2.2.1] heptan-2-yl) -1,1,2,2-tetrafluoroethanesulfonate, 1- (4-n-butoxynaphthalen-1-yl) tetrahydrothiophenium 1,1- Difluoro-2- (bicyclo [2.2.1] heptan-2-yl) ethanesulfonate,

  N- (trifluoromethanesulfonyloxy) succinimide, N- (10-camphorsulfonyloxy) succinimide, N-[(5-methyl-5-carboxymethylbicyclo [2.2.1] heptan-2-yl) sulfonyloxy] Succinimide, N- (trifluoromethanesulfonyloxy) bicyclo [2.2.1] hept-5-ene-2,3-dicarboximide, N- (nonafluoro-n-butanesulfonyloxy) bicyclo [2.2.1 ] Hept-5-ene-2,3-dicarboximide, N- [1,1,2,2-tetrafluoro-2- (norbornan-2-yl) ethanesulfonyloxy] bicyclo [2.2.1] Hept-5-ene-2,3-dicarboximide, N- (10-camphorsulfonyloxy) bicyclo [ 2.1] hept-5-ene-2,3-dicarboximide, N- [2- (5-oxobicyclo [2.2.1] heptan-2-yl) -1,1,2,2 -Tetrafluoroethanesulfonyloxy] bicyclo [2.2.1] hept-5-ene-2,3-dicarboximide, N- [2- (6-oxobicyclo [2.2.1] heptane-2- Yl) -1,1,2,2-tetrafluoroethanesulfonyloxy] bicyclo [2.2.1] hept-5-ene-2,3-dicarboximide, N- [1,1-difluoro-2- (Bicyclo [2.2.1] heptan-2-yl) ethanesulfonyloxy] bicyclo [2.2.1] hept-5-ene-2,3-dicarboximide, bis (cyclohexanesulfonyl) diazomethane, bis ( t-butylsulfur ) Diazomethane, bis (1,4-dioxaspiro [4.5] decane-7-sulfonyl) diazomethane and the like.

  The use ratio of the other acid generator can be appropriately selected according to the type of the other acid generator, but the radiation-sensitive acid generator comprising the sulfonate of the present invention and the other acid generator The amount is usually 95 parts by mass or less, preferably 90 parts by mass or less, and more preferably 80 parts by mass or less with respect to 100 parts by mass in total. In this case, if the use ratio of the other acid generator exceeds 95 parts by mass, the intended effect of the present invention may be impaired.

[Acid-dissociable group-containing resin]
The positive radiation-sensitive resin composition of the present invention includes an alkali-insoluble or alkali-poorly soluble resin having an acid-dissociable group, which is easily soluble in alkali when the acid-dissociable group is dissociated (hereinafter referred to as “resin”). And "acid-dissociable group-containing resin"). The term “alkali-insoluble or alkali-insoluble” as used herein refers to alkali development that is employed when forming a resist pattern from a resist film formed using a radiation-sensitive resin composition containing an acid-dissociable group-containing resin. When a film using only an acid-dissociable group-containing resin instead of the resist film is developed under the conditions, it means that 50% or more of the initial film thickness of the film remains after development.

  The acid dissociable group in the acid dissociable group-containing resin is, for example, a group in which a hydrogen atom in an acidic functional group such as a phenolic hydroxyl group, a carboxyl group, or a sulfonic acid group is substituted, and is a group that dissociates in the presence of an acid. Means. Examples of such acid dissociable groups include substituted methyl groups, 1-substituted ethyl groups, 1-substituted n-propyl groups, 1-branched alkyl groups, alkoxycarbonyl groups, acyl groups, and cyclic acid dissociable groups. Etc.

  Examples of the substituted methyl group include methoxymethyl group, methylthiomethyl group, ethoxymethyl group, ethylthiomethyl group, (2-methoxyethoxy) methyl group, benzyloxymethyl group, benzylthiomethyl group, phenacyl group, 4- Bromophenacyl group, 4-methoxyphenacyl group, 4-methylthiophenacyl group, α-methylphenacyl group, cyclopropylmethyl group, benzyl group, diphenylmethyl group, triphenylmethyl group, 4-bromobenzyl group, 4-nitro Benzyl group, 4-methoxybenzyl group, 4-methylthiobenzyl group, 4-ethoxybenzyl group, 4-ethylthiobenzyl group, piperonyl group, methoxycarbonylmethyl group, ethoxycarbonylmethyl group, n-propoxycarbonylmethyl group, i- Propoxycarbonylmethyl group, - it can be exemplified butoxycarbonyl methyl group, a t- butoxycarbonyl methyl group.

  Examples of the 1-substituted ethyl group include 1-methoxyethyl group, 1-methylthioethyl group, 1,1-dimethoxyethyl group, 1-ethoxyethyl group, 1-ethylthioethyl group, 1,1- Diethoxyethyl group, 1-phenoxyethyl group, 1-phenylthioethyl group, 1,1-diphenoxyethyl group, 1-benzyloxyethyl group, 1-benzylthioethyl group, 1-cyclopropyloxyethyl group, 1 -Cyclohexyloxyethyl group, 1-phenylethyl group, 1,1-diphenylethyl group, 1-methoxycarbonylethyl group, 1-ethoxycarbonylethyl group, 1-n-propoxycarbonylethyl group, 1-i-propoxycarbonylethyl Groups, 1-n-butoxycarbonylethyl group, 1-t-butoxycarbonylethyl group, etc. Can.

  Examples of the 1-substituted-n-propyl group include 1-methoxy-n-propyl group and 1-ethoxy-n-propyl group. Examples of the 1-branched alkyl group include i-propyl group, 1-methylpropyl group, t-butyl group, 1,1-dimethylpropyl group, 1-methylbutyl group, 1,1-dimethylbutyl group, and the like. Can be mentioned. Examples of the alkoxycarbonyl group include a methoxycarbonyl group, an ethoxycarbonyl group, an i-propoxycarbonyl group, and a t-butoxycarbonyl group.

  Examples of the acyl group include acetyl group, propionyl group, butyryl group, heptanoyl group, hexanoyl group, valeryl group, pivaloyl group, isovaleryl group, laurylyl group, myristoyl group, palmitoyl group, stearoyl group, oxalyl group, malonyl Group, succinyl group, glutaryl group, adipoyl group, piperoyl group, suberoyl group, azelaoil group, sebacoyl group, acryloyl group, propioyl group, methacryloyl group, crotonoyl group, oleoyl group, maleoyl group, fumaroyl group, mesaconoyl group, canphoroyl group Benzoyl group, phthaloyl group, isophthaloyl group, terephthaloyl group, naphthoyl group, toluoyl group, hydroatropoyl group, atropoyl group, cinnamoyl group, furoyl group, thenoyl group, nicotinoyl group Isonicotinoyl group, p- toluenesulfonyl group, and mesyl group.

  Examples of the cyclic acid dissociable group include a cyclopropyl group, a cyclopentyl group, a cyclohexyl group, a cyclohexenyl group, a 4-methoxycyclohexyl group, a tetrahydropyranyl group, a tetrahydrofuranyl group, a tetrahydrothiopyranyl group, and a tetrahydro group. A thiofuranyl group, 3-bromotetrahydropyranyl group, 4-methoxytetrahydropyranyl group, 4-methoxytetrahydrothiopyranyl group, 3-tetrahydrothiophene-1,1-dioxide group and the like can be mentioned.

  Among these acid dissociable groups, benzyl group, t-butoxycarbonylmethyl group, 1-methoxyethyl group, 1-ethoxyethyl group, 1-cyclohexyloxyethyl group, 1-ethoxy-n-propyl group, t-butyl Group, 1,1-dimethylpropyl group, t-butoxycarbonyl group, tetrahydropyranyl group, tetrahydrofuranyl group, tetrahydrothiopyranyl group, tetrahydrothiofuranyl group and the like are preferable. In the acid-dissociable group-containing resin, one or more acid-dissociable groups can be present.

  The rate of introduction of acid-dissociable groups in the acid-dissociable group-containing resin (the ratio of the number of acid-dissociable groups to the total number of acid functional groups and acid-dissociable groups in the acid-dissociable group-containing resin) Although it can select suitably by the kind of resin and the resin in which this group is introduce | transduced, Preferably it is 5 to 100%, More preferably, it is 10 to 100%.

  Further, the structure of the acid-dissociable group-containing resin is not particularly limited as long as it has the above-described properties, and various structures can be used. In particular, a hydrogen atom of a phenolic hydroxyl group in poly (4-hydroxystyrene) A hydrogen atom of a phenolic hydroxyl group in a resin obtained by substituting a part or all of an acid dissociable group, 4-hydroxystyrene and / or a copolymer of 4-hydroxy-α-methylstyrene and (meth) acrylic acid, and A resin or the like in which part or all of the hydrogen atoms of the carboxyl group are substituted with acid dissociable groups is preferred.

  Moreover, the structure of acid dissociable group containing resin can be variously selected according to the kind of radiation to be used. For example, as an acid-dissociable group-containing resin particularly suitable for a positive radiation-sensitive resin composition using a KrF excimer laser, for example, a repeating unit represented by the following general formula (8) (hereinafter referred to as “repeating unit (8 ) "And a repeating unit in which the phenolic hydroxyl group in the repeating unit (8) is protected with an acid-dissociable group is preferred. In addition, this resin can be used suitably also for the positive type radiation sensitive resin composition which uses other radiations, such as ArF excimer laser, F2 excimer laser, and an electron beam.

(In the general formula (8), R ¹⁵ represents a hydrogen atom or a monovalent organic group, a plurality of R ¹⁵ may be the same as or different from each other, and c and d are each an integer of 1 to 3. )

  As the repeating unit (8), a unit in which a non-aromatic double bond of 4-hydroxystyrene is cleaved is particularly preferable. The resin may further contain other repeating units.

  Examples of the other repeating units include vinyl aromatic compounds such as styrene and α-methylstyrene; t-butyl (meth) acrylate, adamantyl (meth) acrylate, 2-methyladamantyl (meth) acrylate, and the like. Examples include units in which a polymerizable unsaturated bond of (meth) acrylic acid esters is cleaved.

  Moreover, as an acid dissociable group-containing resin particularly suitable for a positive radiation sensitive resin composition using an ArF excimer laser, for example, a repeating unit represented by the following general formula (9) (hereinafter referred to as “repeating unit (9 ) ”And / or a repeating unit represented by the following general formula (10) (hereinafter referred to as“ repeating unit (10) ”) and a repeating unit represented by the following general formula (11) (hereinafter referred to as“ repeating unit ”). An alkali-insoluble or hardly alkali-soluble resin having “repeating unit (11)” is preferable. In addition, this resin can be used suitably also for the positive type radiation sensitive resin composition using other radiations, such as a KrF excimer laser, F2 excimer laser, and an electron beam.

(In General Formula (9), General Formula (10) and General Formula (11), R ¹⁶ , R ¹⁸ and R ¹⁹ each independently represent a hydrogen atom or a methyl group. In General Formula (9), each R ¹⁷ is independently of each other a hydrogen atom, a hydroxyl group, a cyano group, or —COOR ²¹ (where R ²¹ is a hydrogen atom, a linear or branched alkyl group having 1 to 4 carbon atoms, or a cyclohexane having 3 to 20 carbon atoms). In general formula (11), each R ²⁰ is independently a monovalent alicyclic hydrocarbon group having 4 to 20 carbon atoms or a derivative thereof, or a straight chain having 1 to 4 carbon atoms. A chain or branched alkyl group, and at least one of R ²⁰ is the alicyclic hydrocarbon group or a derivative thereof, or any two R ²⁰ are bonded to each other, and ing Atom together form a divalent alicyclic hydrocarbon group or a derivative thereof having 4 to 20 carbon atoms, the remaining R ²⁰ is 4 alkyl group or a carbon number of straight-chain or branched having 1 to 4 carbon atoms 20 monovalent alicyclic hydrocarbon groups or derivatives thereof.

  Preferred examples of the repeating unit (9) include 3-hydroxyadamantan-1-yl (meth) acrylate, 3,5-dihydroxyadamantan-1-yl (meth) acrylate, and 3-cyanoadamantane (meth) acrylate. -1-yl, (meth) acrylic acid 3-carboxyadamantan-1-yl, (meth) acrylic acid 3,5-dicarboxyadamantan-1-yl, (meth) acrylic acid 3-carboxy-5-hydroxyadamantane- Examples thereof include 1-yl and (meth) acrylic acid 3-methoxycarbonyl-5-hydroxyadamantan-1-yl.

  Moreover, as a preferable repeating unit (11), (meth) acrylic acid 1-methylcyclopentyl, (meth) acrylic acid 1-ethylcyclopentyl, (meth) acrylic acid 1-methylcyclohexyl, (meth) acrylic acid 1- Ethylcyclohexyl, 2-methyladamantan-2-yl (meth) acrylate, 2-ethyladamantan-2-yl (meth) acrylate, 2-n-propyladamantan-2-yl (meth) acrylate, (meth) Examples thereof include 2-i-propyladamantan-2-yl acrylate and 1- (adamantan-1-yl) -1-methylethyl (meth) acrylate.

The resin may further have other repeating units. Examples of the monomer giving the other repeating unit include (meth) acrylic acid 7-oxo-6-oxabicyclo [3.2.1] octane-4-yl, (meth) acrylic acid 2-oxotetrahydro Pyran-4-yl, (meth) acrylic acid 4-methyl-2-oxotetrahydropyran-4-yl, (meth) acrylic acid 5-oxotetrahydrofuran-3-yl, (meth) acrylic acid 2-oxotetrahydrofuran-3 -(Meth) acrylic acid esters such as (yl) (meth) acrylic acid (5-oxotetrahydrofuran-2-yl) methyl, (meth) acrylic acid (3,3-dimethyl-5-oxotetrahydrofuran-2-yl) methyl Class: (meth) acrylamide, N, N-dimethyl (meth) acrylamide, crotonamide, maleinamide, fumar Unsaturated amide compounds such as amide, mesaconamide, citraconic amide, itaconic amide; unsaturated polycarboxylic acid anhydrides such as maleic anhydride and itaconic anhydride; bicyclo [2.2.1] hept-2-ene or derivatives thereof; Tetracyclo [6.2.1 ^3,6 . 0 ^2,7 ] monofunctional monomers such as dodec-3-ene or its derivatives, methylene glycol di (meth) acrylate, ethylene glycol di (meth) acrylate, 2,5-dimethyl-2,5-hexane Diol di (meth) acrylate, 1,2-adamantanediol di (meth) acrylate, 1,3-adamantanediol di (meth) acrylate, 1,4-adamantanediol di (meth) acrylate, tricyclodecane dimethylol di ( Mention may be made of polyfunctional monomers such as (meth) acrylates.

  Furthermore, as an acid-dissociable group-containing resin particularly preferably used for a positive radiation-sensitive resin composition using an F2 excimer laser, a structural unit represented by the following general formula (12) (hereinafter, “structural unit (12 And / or alkali-insoluble or hardly soluble polysiloxane having a structural unit represented by the following general formula (13) (hereinafter referred to as “structural unit (13)”). In addition, this resin can be used suitably also for the positive type radiation sensitive resin composition using other radiations, such as a KrF excimer laser, an ArF excimer laser, and an electron beam.

(In General Formula (12) and General Formula (13), each E independently represents a monovalent organic group having an acid dissociable group, and R ²² is a substituted or unsubstituted straight chain having 1 to 20 carbon atoms. A chain, branched or cyclic monovalent hydrocarbon group is shown.)

  E in the general formula (12) and the general formula (13) is an acid dissociable group in an alicyclic hydrocarbon group such as a cycloalkyl group, a norbornyl group, a tricyclodecanyl group, a tetracyclododecanyl group, an adamantyl group or the like. And a group having an acid-dissociable group in the halogenated aromatic hydrocarbon group are preferred.

  Particularly preferred structural units (12) in the resin include structural units represented by the following formulas (12-1) to (12-4).

  The resin may have one or more types of structural units other than those described above (hereinafter referred to as “other structural units”). Preferred other structural units include, for example, structural units obtained by hydrolysis and condensation of alkylalkoxysilanes such as methyltrimethoxysilane, methyltriethoxysilane, ethyltrimethoxysilane, and ethyltriethoxysilane; ) To (14-4).

  The resin can be produced by (co) polycondensation of one or more silane compounds having an acid dissociable group, or by introducing one or more acid dissociable groups into a pre-synthesized organic polysiloxane. .

  In the case of (co) polycondensation of a silane compound having an acid dissociable group, it is preferable to use an acidic catalyst as the catalyst. In particular, after the polycondensation of the silane compound in the presence of an acidic catalyst, the basic catalyst is used. In addition, it is preferable to further react.

  Examples of the acidic catalyst include inorganic acids such as hydrochloric acid, sulfuric acid, nitric acid, boric acid, phosphoric acid, titanium tetrachloride, zinc chloride, and aluminum chloride; formic acid, acetic acid, n-propionic acid, butyric acid, valeric acid, and oxalic acid. Organic acids such as malonic acid, succinic acid, maleic acid, fumaric acid, adipic acid, phthalic acid, terephthalic acid, acetic anhydride, maleic anhydride, citric acid, benzenesulfonic acid, p-toluenesulfonic acid, methanesulfonic acid, etc. Can be mentioned. Of these acidic catalysts, hydrochloric acid, sulfuric acid, acetic acid, oxalic acid, malonic acid, maleic acid, fumaric acid, acetic anhydride, maleic anhydride and the like are preferable.

  Examples of the basic catalyst include inorganic bases such as lithium hydroxide, sodium hydroxide, potassium hydroxide, calcium hydroxide, barium hydroxide, sodium hydrogen carbonate, potassium hydrogen carbonate, sodium carbonate, and potassium carbonate; Examples thereof include organic bases such as triethylamine, tri-n-propylamine, tri-n-butylamine, and pyridine.

  When the acid-dissociable group-containing resin is produced by polymerization of a polymerizable unsaturated monomer or through the polymerization, the resin is derived from a polyfunctional monomer having two or more polymerizable unsaturated bonds. A branched structure can be introduced by a unit and / or an acetal crosslinking group. By introducing such a branched structure, the heat resistance of the acid-dissociable group-containing resin can be improved.

  In this case, the introduction rate of the branched structure in the acid-dissociable group-containing resin can be appropriately selected depending on the type of the branched structure and the resin into which the branched structure is introduced. Preferably there is.

  The molecular weight of the acid-dissociable group-containing resin is not particularly limited and may be appropriately selected. The polystyrene-reduced weight molecular weight (hereinafter referred to as “Mw”) measured by gel permeation chromatography (GPC) is usually used. 1,000 to 500,000, preferably 2,000 to 400,000, and more preferably 3,000 to 300,000.

  The acid dissociable group-containing resin having no branched structure preferably has an Mw of 1,000 to 150,000, more preferably 3,000 to 100,000, and contains an acid dissociable group having a branched structure. The Mw of the resin (B) is preferably 5,000 to 500,000, more preferably 8,000 to 300,000. By using the acid-dissociable group-containing resin having Mw in such a range, the resulting resist has excellent alkali developability.

  Further, the ratio (Mw / Mn) between the Mw of the acid-dissociable group-containing resin and the polystyrene-equivalent number average molecular weight (hereinafter referred to as “Mn”) measured by GPC is not particularly limited and can be appropriately selected. However, it is 1-10 normally, Preferably it is 1-8, More preferably, it is 1-5. By using the acid-dissociable group-containing resin having Mw / Mn in such a range, the resulting resist has excellent resolution performance. In the positive radiation sensitive resin composition of the present invention, the acid dissociable group-containing resins can be used alone or in admixture of two or more.

  The method for producing the acid-dissociable group-containing resin is not particularly limited. For example, a method for introducing one or more acid-dissociable groups into an acidic functional group in an alkali-soluble resin produced in advance; A method of polymerizing one or more polymerizable unsaturated monomers, optionally together with one or more other polymerizable unsaturated monomers; one or more polycondensable components having acid dissociable groups, Depending on the case, it can be produced by a method such as polycondensation with other polycondensable components.

  Polymerization of the polymerizable unsaturated monomer and the polymerization of the polymerizable unsaturated monomer having an acid dissociable group at the time of producing the alkali-soluble resin are the polymerizable unsaturated monomer and reaction medium used. The polymerization initiator or polymerization catalyst such as radical polymerization initiator, anion polymerization catalyst, coordination anion polymerization catalyst, cation polymerization catalyst, etc. is appropriately selected according to the type of polymer, bulk polymerization, solution polymerization, precipitation polymerization, emulsion polymerization. , Suspension polymerization, bulk-suspension polymerization and the like.

  The polycondensation of the polycondensable component having an acid dissociable group can be preferably carried out in an aqueous medium or a mixed medium of water and a hydrophilic solvent in the presence of an acidic catalyst.

  In the positive radiation sensitive resin composition of the present invention, the amount of the radiation sensitive acid generator used can be variously selected according to the desired properties of the resist, but the acid dissociable group-containing resin 100 mass. Preferably it is 0.001-70 mass part with respect to a part, More preferably, it is 0.01-50 mass part, Most preferably, it is 0.1-20 mass part. In this case, when the amount of the radiation-sensitive acid generator used is 0.001 part by mass or more, a decrease in sensitivity and resolution can be suppressed, and when it is 70 parts by mass or less, the resist coatability and pattern shape are reduced. Can be suppressed.

[Alkali-soluble resin]
In the negative radiation-sensitive resin composition of the present invention, an alkali having at least one functional group having affinity with an alkaline developer, for example, one or more oxygen-containing functional groups such as a phenolic hydroxyl group, an alcoholic hydroxyl group, and a carboxyl group. You may mix | blend alkali-soluble resin soluble in a developing solution.

  Examples of such an alkali-soluble resin include a repeating unit represented by the following general formula (15) (hereinafter referred to as “repeating unit (15)”), a repeating unit represented by the following general formula (16) ( Hereinafter, the addition having at least one selected from the group consisting of “repeating unit (16)” and a repeating unit represented by the following general formula (17) (hereinafter referred to as “repeating unit (17)”). Examples thereof include polymerization resins.

(In General Formula (15) and General Formula (16), R ²³ and R ²⁵ each independently represent a hydrogen atom or a methyl group, R ²⁴ represents a hydroxyl group, a carboxyl group, —R ²⁶ COOH, —OR ²⁶ COOH. , —OCOR ²⁶ COOH or —COOR ²⁶ COOH (where each R ²⁶ independently represents — (CH ₂ ) _e —, and e is an integer of 1 to 4).

  The alkali-soluble resin may be composed only of the repeating unit (15), the repeating unit (16), or the repeating unit (17). However, as long as the produced resin is soluble in an alkali developer, other repeating units are possible. One or more units may be further included. As said other repeating unit, the unit similar to the other repeating unit in the acid dissociable group containing resin mentioned above etc. can be mentioned, for example.

  The total content of the repeating unit (15), the repeating unit (16), and the repeating unit (17) in the alkali-soluble resin cannot be defined unconditionally depending on the types of other repeating units that are optionally contained. It is 100 mol%, More preferably, it is 20-100 mol%.

  When the alkali-soluble resin has a repeating unit having a carbon-carbon unsaturated bond such as the repeating unit (15), it can also be used as a hydrogenated product. In this case, the hydrogenation rate is usually 70% or less, preferably 50% or less, and more preferably 40% or less, of the carbon-carbon unsaturated bonds contained in the corresponding repeating unit. In this case, if the hydrogenation rate exceeds 70%, the alkali developability of the alkali-soluble resin may be lowered.

  As the alkali-soluble resin in the present invention, in particular, poly (4-hydroxystyrene), 4-hydroxystyrene / 4-hydroxy-α-methylstyrene copolymer, 4-hydroxystyrene / styrene copolymer and the like are the main components. Resin is preferred.

  The Mw of the alkali-soluble resin varies depending on the desired properties of the negative radiation-sensitive resin composition, but is usually 1,000 to 150,000, preferably 3,000 to 100,000.

  In the negative radiation sensitive resin composition of the present invention, the alkali-soluble resins can be used alone or in admixture of two or more.

[Crosslinking agent]
In the negative radiation sensitive resin composition of the present invention, a compound capable of crosslinking an alkali-soluble resin in the presence of an acid (hereinafter referred to as “crosslinking agent”) may be blended. Examples of the crosslinking agent include compounds having at least one functional group having a crosslinking reactivity with an alkali-soluble resin (hereinafter referred to as “crosslinkable functional group”).

  Examples of the crosslinkable functional group include glycidyl ether group, glycidyl ester group, glycidyl amino group, methoxymethyl group, ethoxymethyl group, benzyloxymethyl group, acetoxymethyl group, benzoyloxymethyl group, formyl group, acetyl group, Examples thereof include a vinyl group, an isopropenyl group, a (dimethylamino) methyl group, a (diethylamino) methyl group, a (dimethylolamino) methyl group, a (diethylolamino) methyl group, and a morpholinomethyl group.

  Examples of the crosslinking agent include bisphenol A-based epoxy compounds, bisphenol F-based epoxy compounds, bisphenol S-based epoxy compounds, novolac resin-based epoxy compounds, resol resin-based epoxy compounds, poly (hydroxystyrene) -based epoxy compounds, and methylol group-containing melamine. Compound, methylol group-containing benzoguanamine compound, methylol group-containing urea compound, methylol group-containing phenol compound, alkoxyalkyl group-containing melamine compound, alkoxyalkyl group-containing benzoguanamine compound, alkoxyalkyl group-containing urea compound, alkoxyalkyl group-containing phenol compound, carboxymethyl Group-containing melamine resin, carboxymethyl group-containing benzoguanamine resin, carboxymethyl group-containing urea resin, carboxymethyl group-containing Phenol resins, carboxymethyl group-containing melamine compounds, carboxymethyl group-containing benzoguanamine compounds, carboxymethyl group-containing urea compounds, mention may be made of carboxymethyl group-containing phenol compounds and the like.

  Among these crosslinking agents, methylol group-containing phenol compounds, methoxymethyl group-containing melamine compounds, methoxymethyl group-containing phenol compounds, methoxymethyl group-containing glycoluril compounds, methoxymethyl group-containing urea compounds and acetoxymethyl group-containing phenol compounds are preferred. More preferred are methoxymethyl group-containing melamine compounds (for example, hexamethoxymethyl melamine), methoxymethyl group-containing glycoluril compounds, methoxymethyl group-containing urea compounds, and the like. Methoxymethyl group-containing melamine compounds are trade names such as CYMEL300, 301, 303, and 305 (Mitsui Cyanamid), and methoxymethyl group-containing glycoluril compounds are products such as CYMEL1174 (Mitsui Cyanamid). In addition, methoxymethyl group-containing urea compounds are commercially available under trade names such as MX290 (manufactured by Sanwa Chemical Co., Ltd.).

  Moreover, as the crosslinking agent, a resin imparted with a property as a crosslinking agent by substituting the hydrogen atom of the oxygen-containing functional group in the alkali-soluble resin with the crosslinking functional group can be suitably used. The introduction rate of the crosslinkable functional group in that case cannot be unconditionally defined by the type of the crosslinkable functional group or the alkali-soluble resin into which the group is introduced, but with respect to the total oxygen-containing functional group in the alkali-soluble resin, Usually, it is 5 to 60 mol%, preferably 10 to 50 mol%, more preferably 15 to 40 mol%. In this case, if the introduction ratio of the crosslinkable functional group is less than 5 mol%, the remaining film ratio tends to decrease, the pattern meanders or swells easily, and if it exceeds 60 mol%, the alkali developability is increased. There is a tendency to decrease.

  As the crosslinking agent in the present invention, a methoxymethyl group-containing compound, more specifically dimethoxymethylurea, tetramethoxymethylglycoluril and the like are particularly preferable. In the negative radiation sensitive resin composition of the present invention, the crosslinking agents can be used alone or in admixture of two or more.

  In the negative radiation-sensitive resin composition of the present invention, the amount of the radiation-sensitive acid generator used is preferably 0.01 to 70 parts by mass, more preferably 0.1 to 100 parts by mass of the alkali-soluble resin. To 50 parts by mass, particularly preferably 0.5 to 20 parts by mass. In this case, if the amount of the radiation-sensitive acid generator used is less than 0.01 parts by mass, the sensitivity and resolution tend to decrease. On the other hand, if it exceeds 70 parts by mass, the resist coatability and pattern shape deteriorate. It tends to be easy to do.

  Moreover, the usage-amount of a crosslinking agent becomes like this. Preferably it is 5-95 mass parts with respect to 100 mass parts of alkali-soluble resin, More preferably, it is 15-85 mass parts, Most preferably, it is 20-75 mass parts. In this case, if the amount of the crosslinking agent used is less than 5 parts by mass, the remaining film ratio tends to decrease, the pattern meanders or swells easily, and if it exceeds 95 parts by mass, the alkali developability decreases. Tend.

[Other additives]
The positive-type radiation-sensitive resin composition and the negative-type radiation-sensitive resin composition of the present invention control the diffusion phenomenon in the resist film of the acid generated from the radiation-sensitive acid generator by exposure, and in the non-exposed area. It is preferable to add an acid diffusion controller having an action of suppressing undesirable chemical reactions. By blending such an acid diffusion control agent, the storage stability of the radiation-sensitive resin composition can be improved, the resolution is further improved, and the holding time from exposure to development processing (PED) As a result, a radiation-sensitive resin composition having extremely excellent process stability can be obtained.

  As such an acid diffusion controller, a nitrogen-containing organic compound whose basicity is not changed by exposure or heat treatment in the resist pattern forming step is preferable. Examples of the nitrogen-containing organic compound include a compound represented by the following general formula (18) (hereinafter referred to as “nitrogen-containing compound (α)”), a diamino compound having two nitrogen atoms in the same molecule (hereinafter referred to as “nitrogen-containing compound (α)”). , “Nitrogen-containing compound (β)”), polyamino compounds and polymers having three or more nitrogen atoms (hereinafter referred to as “nitrogen-containing compound (γ)”), amide group-containing compounds, urea compounds, nitrogen-containing compounds. A heterocyclic compound etc. can be mentioned.

(In the general formula (18), each R ²⁷ independently represents a hydrogen atom, an alkyl group, an aryl group or an aralkyl group, and each of these groups may be substituted.)

In the general formula (18), examples of the optionally substituted alkyl group represented by R ²⁷ include those having 1 to 15 carbon atoms, preferably 1 to 10 carbon atoms, specifically, methyl group, ethyl group, n- Propyl group, i-propyl group, n-butyl group, 2-methylpropyl group, 1-methylpropyl group, t-butyl group, n-pentyl group, neopentyl group, n-hexyl group, n-heptyl group, n -Octyl group, n-ethylhexyl group, n-nonyl group, n-decyl group, hydroxymethyl group, 2-hydroxyethyl group, 3-hydroxypropyl group and the like can be mentioned.

Examples of the aryl group which may be substituted for R ²⁷ include those having 6 to 12 carbon atoms, specifically, phenyl group, o-tolyl group, m-tolyl group, p-tolyl group, 2, Examples include 3-xylyl group, 2,4-xylyl group, 2,5-xylyl group, 2,6-xylyl group, 3,4-xylyl group, 3,5-xylyl group, cumenyl group, 1-naphthyl group, and the like. be able to. Furthermore, examples of the aralkyl group which may be substituted for R ²⁷ include those having 7 to 19 carbon atoms, preferably 7 to 13 carbon atoms, specifically, benzyl group, α-methylbenzyl group, phenethyl group, 1 -A naphthylmethyl group etc. can be mentioned.

  Examples of the nitrogen-containing compound (α) include monoalkylamines such as n-hexylamine, n-heptylamine, n-octylamine, n-nonylamine, n-decylamine; di-n-butylamine, di-n- Dialkylamines such as pentylamine, di-n-hexylamine, di-n-heptylamine, di-n-octylamine, di-n-nonylamine, di-n-decylamine; triethylamine, tri-n-propylamine, Trialkylamines such as tri-n-butylamine, tri-n-pentylamine, tri-n-hexylamine, tri-n-heptylamine, tri-n-octylamine, tri-n-nonylamine, tri-n-decylamine Alkanolamines such as ethanolamine, diethanolamine and triethanolamine Aromatic amines such as aniline, N-methylaniline, N, N-dimethylaniline, 2-methylaniline, 3-methylaniline, 4-methylaniline, 4-nitroaniline, diphenylamine, triphenylamine, 1-naphthylamine, etc. Can be mentioned.

  Examples of the nitrogen-containing compound (β) include ethylenediamine, N, N, N ′, N′-tetramethylethylenediamine, tetramethylenediamine, hexamethylenediamine, N, N, N ′, N′-tetrakis (2-hydroxy Ethyl) ethylenediamine, N, N, N ′, N′-tetrakis (2-hydroxypropyl) ethylenediamine, 4,4′-diaminodiphenylmethane, 4,4′-diaminodiphenyl ether, 4,4′-diaminobenzophenone, 4,4 '-Diaminodiphenylamine, 2,2'-bis (4-aminophenyl) propane, 2- (3-aminophenyl) -2- (4-aminophenyl) propane, 2- (4-aminophenyl) -2- ( 3-hydroxyphenyl) propane, 2- (4-aminophenyl) -2- (4-hydroxy) Phenyl) propane, 1,4-bis [1- (4-aminophenyl) -1-methylethyl] benzene, 1,3-bis [1- (4-aminophenyl) -1-methylethyl] benzene, etc. be able to. Examples of the nitrogen-containing compound (γ) include polyethyleneimine, polyallylamine, N- (2-dimethylaminoethyl) acrylamide polymer, and the like.

  Examples of the amide group-containing compound include formamide, N-methylformamide, N, N-dimethylformamide, acetamide, N-methylacetamide, N, N-dimethylacetamide, propionamide, benzamide, pyrrolidone, N-methylpyrrolidone and the like. Can be mentioned.

  Examples of the urea compound include urea, methylurea, 1,1-dimethylurea, 1,3-dimethylurea, 1,1,3,3-tetramethylurea, 1,3-diphenylurea, tri-n-butyl. Examples include thiourea.

  Examples of the nitrogen-containing heterocyclic compound include imidazole, benzimidazole, 2-methylimidazole, 4-methylimidazole, 1,2-dimethylimidazole, 2-phenylimidazole, 4-phenylimidazole, 4-methyl-2- Imidazoles such as phenylimidazole and 2-phenylbenzimidazole; pyridine, 2-methylpyridine, 4-methylpyridine, 2-ethylpyridine, 4-ethylpyridine, 2-phenylpyridine, 4-phenylpyridine, 2-methyl-4 -In addition to pyridines such as phenylpyridine, nicotine, nicotinic acid, nicotinamide, quinoline, 8-oxyquinoline, acridine, pyrazine, pyrazole, pyridazine, quinosaline, purine, pyrrolidine, piperidine, 1-piperidineethanol 2-piperidine ethanol, morpholine, 4-methylmorpholine, piperazine, 1,4-dimethylpiperazine, and 1,4-diazabicyclo [2.2.2] octane.

  In addition, as the nitrogen-containing organic compound, a compound having an acid dissociable group can also be used. Examples of the nitrogen-containing organic compound having an acid dissociable group include N- (t-butoxycarbonyl) piperidine, N- (t-butoxycarbonyl) imidazole, N- (t-butoxycarbonyl) benzimidazole, N- ( t-butoxycarbonyl) -2-phenylbenzimidazole, N- (t-butoxycarbonyl) di-n-octylamine, N- (t-butoxycarbonyl) diethanolamine, N- (t-butoxycarbonyl) dicyclohexylamine, N- (T-Butoxycarbonyl) diphenylamine, tert-butyl-4-hydroxy-1-piperidinecarboxylate and the like can be mentioned.

  Of these nitrogen-containing organic compounds, nitrogen-containing compounds (α), nitrogen-containing compounds (β), nitrogen-containing heterocyclic compounds, nitrogen-containing organic compounds having an acid dissociable group, and the like are preferable. The acid diffusion controller can be used alone or in admixture of two or more.

  The compounding amount of the acid diffusion controller is preferably 15 parts by mass or less, more preferably 0.001 to 10 parts by mass, and particularly preferably 0.005 with respect to 100 parts by mass of the acid dissociable group-containing resin or alkali-soluble resin. -5 parts by mass. In this case, by setting the blending amount of the acid diffusion control agent to 0.001 part by mass or more, a decrease in pattern shape and dimensional fidelity due to process conditions can be suppressed, and by setting it to 15 parts by mass or less, as a resist Sensitivity and alkali developability can be further improved.

  The positive-type radiation-sensitive resin composition and the negative-type radiation-sensitive resin composition of the present invention can be blended with a dissolution control agent having a property of increasing the solubility in an alkali developer by the action of an acid.

  As such a dissolution control agent, for example, a compound having an acidic functional group such as a phenolic hydroxyl group, a carboxyl group, or a sulfonic acid group, or a compound in which the hydrogen atom of the acidic functional group in the compound is substituted with an acid dissociable group Etc.

  The dissolution control agent may be a low molecular compound or a high molecular compound. As the polymer dissolution control agent in the negative radiation sensitive resin composition, for example, an acid-dissociable group-containing resin in the positive radiation sensitive resin composition is used. can do. The said dissolution control agent can be used individually or in mixture of 2 or more types.

  The compounding quantity of a dissolution control agent is 50 mass parts or less normally with respect to 100 mass parts of all the resin components in a radiation sensitive resin composition, Preferably it is 20 mass parts or less.

  The positive-type radiation-sensitive resin composition and the negative-type radiation-sensitive resin composition of the present invention are blended with a surfactant exhibiting the action of improving the coating property, striation, developability, etc. of the radiation-sensitive resin composition. You can also

  As such a surfactant, any of anionic, cationic, nonionic or amphoteric surfactants can be used, but nonionic surfactants are preferred.

  Examples of the nonionic surfactant include polyoxyethylene higher alkyl ethers, polyoxyethylene higher alkyl phenyl ethers, polyethylene glycol higher fatty acid diesters, and the following trade names “KP” (Shin-Etsu Chemical Co., Ltd.). ”,“ Polyflow ”(manufactured by Kyoeisha Chemical Co., Ltd.),“ F Top ”(manufactured by Gemco),“ Megafuck ”(manufactured by Dainippon Ink & Chemicals),“ Florard ”(manufactured by Sumitomo 3M), Each series such as “Guard” and “Surflon” (manufactured by Asahi Glass Co., Ltd.) can be mentioned. The surfactants can be used alone or in admixture of two or more.

  The compounding amount of the surfactant is usually 2 parts by mass or less, preferably 1.5 parts by mass or less as an active ingredient of the surfactant with respect to 100 parts by mass of the total resin components in the radiation-sensitive resin composition. is there.

  The positive-type radiation-sensitive resin composition and the negative-type radiation-sensitive resin composition of the present invention absorbs radiation energy and transmits the energy to the radiation-sensitive acid generator, thereby generating an amount of acid. A sensitizer capable of increasing the apparent sensitivity and improving the apparent sensitivity of the radiation-sensitive resin composition can be blended. Examples of such sensitizers include acetophenones, benzophenones, naphthalene, biacetyl, eosin, rose bengal, pyrenes, anthracenes, phenothiazines and the like. These sensitizers can be used alone or in admixture of two or more.

  The compounding quantity of a sensitizer is 50 mass parts or less normally with respect to 100 mass parts of all the resin components in a radiation sensitive resin composition, Preferably it is 30 mass parts or less.

  Furthermore, in the positive radiation sensitive resin composition and the negative radiation sensitive resin composition of the present invention, additives other than those described above, for example, dyes, are included as long as the effects of the present invention are not impaired. A pigment, an adhesion assistant, an antihalation agent, a storage stabilizer, an antifoaming agent, a shape improving agent, etc., specifically, 4-hydroxy-4′-methylchalcone or the like can be blended. In this case, by blending a dye or pigment, the latent image in the exposed area can be visualized, and the influence of halation during exposure can be mitigated, and the adhesion to the substrate can be improved by blending an adhesion assistant. be able to.

Preparation of composition solution:
The positive-type radiation-sensitive resin composition and the negative-type radiation-sensitive resin composition of the present invention are usually prepared by dissolving each component in a solvent at the time of use to obtain a uniform solution, and then if necessary, for example, a pore diameter of about 0.2 μm It is prepared as a composition solution by filtering with a filter or the like.

  Examples of the solvent include ethers, esters, ether esters, ketones, ketone esters, amides, amide esters, lactams, (halogenated) hydrocarbons, and the like. Specifically, ethylene glycol monoalkyl ethers, diethylene glycol dialkyl ethers, propylene glycol monoalkyl ethers, propylene glycol dialkyl ethers, ethylene glycol monoalkyl ether acetates, propylene glycol monoalkyl ether acetates, acyclic or cyclic Ketones, acetates, hydroxyacetic acid esters, alkoxyacetic acid esters, acetoacetic acid esters, propionic acid esters, lactic acid esters, other substituted propionic acid esters of the formula (Substituted) Butyrate esters, Pyruvate esters, N, N-dialkylformamides, N, N-dialkylacetamides, N-alkylpyrrolidones, (halogenated) aliphatic hydrocarbons, (halogenated) aromatics Examples thereof include hydrocarbons.

  Specific examples of the solvent include ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol mono-n-propyl ether, ethylene glycol mono-n-butyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol di-n-propyl ether. , Diethylene glycol di-n-butyl ether, ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol mono-n-propyl ether acetate, methyl ethyl ketone, 2-heptanone, 3-heptanone, 4 Heptanone, cyclohexanone, ethyl acetate, n-propyl acetate, n-butyl acetate, isopropenyl acetate, 3-methoxybutyl acetate, 3-methyl-3-methoxybutyl acetate, ethyl hydroxyacetate, ethyl ethoxyacetate, methyl acetoacetate, aceto Ethyl acetate, isopropenyl propionate, 3-methyl-3-methoxybutyl propionate, methyl lactate, ethyl lactate, n-propyl lactate, i-propyl lactate, methyl 3-methoxypropionate, ethyl 3-methoxypropionate , Methyl 3-ethoxypropionate, ethyl 3-ethoxypropionate, 3-methyl-3-methoxybutyl butyrate, methyl 2-hydroxy-3-methylbutyrate, ethyl 2-hydroxy-2-methylpropionate, N, N -Dimethylform Bromide, N, N- dimethylacetamide, N- methylpyrrolidone, toluene, xylene and the like.

  Among these solvents, propylene glycol monoalkyl ether acetates, acyclic or cyclic ketones, lactic acid esters, 3-alkoxypropionic acid esters, etc. ensure good in-plane uniformity during coating. It is preferable in that it can be performed. The said solvent can be used individually or in mixture of 2 or more types.

  If necessary, other solvents such as benzyl ethyl ether, di-n-hexyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, acetonyl acetone, isophorone, caproic acid, caprylic acid, 1- Use high-boiling solvents such as octanol, 1-nonanol, benzyl alcohol, benzyl acetate, ethyl benzoate, diethyl oxalate, diethyl maleate, γ-butyrolactone, ethylene carbonate, propylene carbonate, ethylene glycol monophenyl ether acetate, etc. Can do. Of these other solvents, γ-butyrolactone is preferred.

  The other solvents can be used alone or in admixture of two or more. The proportion of other solvents used is usually 50% by mass or less, preferably 30% by mass or less, based on the total solvent.

  The total amount of the solvent used is such that the total solid concentration of the composition solution is usually 5 to 50% by mass, preferably 10 to 50% by mass, more preferably 10 to 40% by mass, and particularly preferably 10 to 30% by mass. In particular, the amount is 10 to 25% by mass. By setting the total solid content concentration of the solution within this range, it is possible to ensure good in-plane uniformity during coating.

Formation of resist pattern:
When forming a resist pattern from the positive radiation sensitive resin composition and the negative radiation sensitive resin composition of the present invention, the composition solution prepared as described above is spin-coated, cast-coated, The resist film is formed by applying onto a substrate such as a silicon wafer or a wafer coated with aluminum by an appropriate application means such as roll coating. Thereafter, a heat treatment (hereinafter referred to as “PB”) is performed in advance in some cases, and then the resist film is exposed through a predetermined mask pattern.

  The radiation that can be used for exposure includes the emission line spectrum of a mercury lamp (wavelength 254 nm), KrF excimer laser (wavelength 248 nm), ArF excimer laser (wavelength) depending on the type of radiation-sensitive acid generator used. 193 nm), F2 excimer laser (wavelength 157 nm), deep ultraviolet rays such as EUV (wavelength 13 nm, etc.), X-rays such as synchrotron radiation, charged particle beams such as electron beams, etc. A charged particle beam, particularly preferably a KrF excimer laser (wavelength 248 nm), an ArF excimer laser (wavelength 193 nm), an F2 excimer laser (wavelength 157 nm), and an electron beam.

  The exposure conditions such as the radiation dose are appropriately selected according to the composition of the positive radiation sensitive resin composition and the negative radiation sensitive resin composition, the type of additive, and the like. In forming a resist pattern, it is preferable to perform a heat treatment (hereinafter referred to as “PEB”) after exposure from the viewpoint of improving the apparent sensitivity of the resist. The heating conditions for PEB vary depending on the composition of the radiation-sensitive resin composition, the type of additive, and the like, but are usually 30 to 200 ° C, preferably 50 to 150 ° C.

  Thereafter, the exposed resist film is developed with an alkaline developer to form a predetermined positive or negative resist pattern.

  Examples of the alkali developer include alkali metal hydroxides, aqueous ammonia, alkylamines, alkanolamines, heterocyclic amines, tetraalkylammonium hydroxides, choline, 1,8-diazabicyclo [5.4. 0.0] -7-undecene, 1,5-diazabicyclo [4.3.0] -5-nonene and the like, an alkaline aqueous solution in which one or more alkaline compounds are dissolved is used. An aqueous solution of ammonium hydroxides.

  The concentration of the alkaline aqueous solution is preferably 10% by mass or less, more preferably 1 to 10% by mass, and particularly preferably 2 to 5% by mass. In this case, by setting the concentration of the alkaline aqueous solution to 10% by mass or less, dissolution of the non-exposed portion (in the case of positive type) or the exposed portion (in the case of negative type) into the alkaline developer can be suppressed.

  In addition, it is preferable to add an appropriate amount of a surfactant or the like to the developer composed of the alkaline aqueous solution, thereby improving the wettability of the alkali developer with respect to the resist film. In addition, after developing with the developing solution which consists of the said alkaline aqueous solution, generally it wash | cleans with water and dries.

  EXAMPLES Hereinafter, although this invention is demonstrated concretely based on an Example, this invention is not limited to these Examples.

[Example 1]:
A compound represented by the following general formula (19), sodium 1,1,2,2-tetrafluorobutane-1-sulfonate, was synthesized by the following method.

  In the reaction flask, 6.96 g of sodium dithionite and 6.64 g of sodium carbonate were added, and then 30 ml of ion-exchanged water was added and stirred for 30 minutes. Next, 4.18 g of 1-bromo-1,1,2,2-tetrafluorobutane previously dissolved in 30 ml of acetonitrile was added dropwise to the mixed solution over 15 minutes, followed by heating with stirring for 3.5 hours. (Internal temperature 60 ° C.). The reaction solution was removed under reduced pressure and concentrated to dryness to obtain 10.8 g of a crude product of sodium 1,1,2,2-tetrafluorobutane-1-sulfinate. Sodium 1,1,2,2-tetrafluorobutane-1-sulfinate was used in the next reaction without further purification.

  In a reaction flask, 20 mL of ion-exchanged water, 3.32 g of sodium carbonate, and 0.27 g of sodium tungstate are added to 10.8 g of a crudely purified product of sodium 1,1,2,2-tetrafluorobutane-1-sulfinate. Stir for 30 minutes. Next, 20 ml of 30 wt% hydrogen peroxide water was added dropwise to the reaction mixture solution over 30 minutes, followed by stirring at 60 ° C. for 3 hours. Next, the reaction solvent was removed under reduced pressure, washed 3 times with 50 mL of pure water, and extracted with 50 mL of dichloromethane. The organic layer was removed under reduced pressure to obtain 4.1 g of a white solid of 1,1,2,2-tetrafluorobutane-1-sulfonic acid sodium.

In addition, about 1,1,2,2-tetrafluorobutane-1-sulfonic acid sodium, as a result of analyzing using ¹ H-NMR (trade name: JNM-EX270, manufactured by JEOL Ltd.), the obtained chemical shift is , ¹ H-NMR [σ ppm (DMSO): 1.10 (3H, t, J = 7.36 Hz), 2.12-2.24 (3H, m)], ¹⁹ F-NMR [σ ppm (DMSO): 44.93-44.97 (2F, m), 48.42-48.56 (2F, m)], and confirmed to be the target compound (note that ¹⁹ F-NMR is hexafluorobenzene). Peak was set to 0 ppm (internal standard)). Purity 92 wt% (measured by ¹ H-NMR).

[Example 2]:
A compound represented by the following general formula (Ba), triphenylsulfonium 1,1,2,2-tetrafluorobutane-1-sulfonate was synthesized by the following method.

A reaction flask was charged with 53.2 g of sodium 1,1,2,2-tetrafluorobutane-1-sulfonate and 54.9 g of triphenylsulfonium bromide, 500 ml of ion-exchanged water and 500 ml of dichloromethane, and stirred at room temperature for 1 hour. . After the organic layer was separated, the organic layer was washed 5 times with 500 ml of ion exchange water. Thereafter, 78.1 g of triphenylsulfonium 1,1,2,2-tetrafluorobutane-1-sulfonate was obtained by removing the solvent. In addition, about triphenylsulfonium 1,1,2,2-tetrafluorobutane-1-sulfonate, ¹ H-NMR (trade name: JNM-EX270, manufactured by JEOL Ltd.) was used as a result of analyzing the measurement solvent as heavy water. The obtained chemical shift was ¹ H-NMR [σ ppm (CDCl ₃ ): 1.10 (3H, t, J = 7.36 Hz), 2.12-2.24 (3H, m), 7.76. −7.89 (15H, m)], ¹⁹ F-NMR [σ ppm (CDCl ₃ ): 44.93-44.97 (2F, m), 48.42-48.56 (2F, m)]. The target compound was confirmed ( ¹⁹ F-NMR defined the peak of hexafluorobenzene as 0 ppm). Purity 99wt% or more.

[Example 3]
In the same manner as in Example 2, the following compound (Bb) was obtained.

4-n-butoxy-1-naphthyltetrahydrothiophenium 1,1,2,2-tetrafluorobutane-1-sulfonate
¹ H-NMR [σ ppm (CDCl ₃ ): 1.04 (3H, t, J = 7.36 Hz), 1.10 (3H, t, J = 7.36 Hz), 1.56-1.63 (5H , M), 1.91-1.95 (2H, m), 2.12-2.24 (3H, m), 2.61-2.67 (4H, m), 3.67-3.71 (2H, m), 4.22-4.25 (4H, m), 7.05 (1H, d, J = 8.56 Hz), 7.65-7.80 (2H, m), 7.94 (1H, d, J = 8.60 Hz), 8.26 (1H, d, J = 8.56 Hz), 8.42 (1H, d, J = 8.56 Hz)], ¹⁹ F-NMR [σ ppm ( _{CDCl 3): 44.92-44.97 (2F,} m), 48.42-48.55 (2F, m)]. Purity 98 wt% or more.

"Resin synthesis"
(Example 3)
21.17 g (25 mol%) of the following compound (S-1), 27.21 g (25 mol%) of the following compound (S-4), 51.62 g (50 mol%) of the following compound (S-5) A monomer solution was prepared by dissolving in 200 g of butanone and adding 3.81 g of dimethyl 2,2′-azobis (2-methylpropionate). A 1000 ml three-necked flask charged with 100 g of 2-butanone was purged with nitrogen for 30 minutes. After purging with nitrogen, the reaction vessel was heated to 80 ° C. with stirring, and the monomer solution prepared in advance was added using a dropping funnel. The solution was added dropwise over 3 hours. The polymerization start was carried out for 6 hours with the start of dropping as the polymerization start time. After completion of the polymerization, the polymerization solution was cooled with water to 30 ° C. or lower, poured into 2000 g of methanol, and the precipitated white powder was separated by filtration. The filtered white powder was dispersed in 400 g of methanol and washed in the form of a slurry, followed by filtration, followed by filtration twice, followed by drying at 50 ° C. for 17 hours to obtain a white powder copolymer (resin ( A)) was obtained (74 g, yield 74%). This copolymer has Mw of 6180 and Mw / Mn = 1.717, and as a result of ¹³ C-NMR analysis, it is represented by compound (S-1), compound (S-4), and compound (S-5). The content of each repeating unit was 24.5: 24.2: 51.3 (mol%). This copolymer is referred to as “polymer (A-1)”.

  Each measurement and evaluation in each example and comparative example was performed as follows.

(sensitivity)
Using a silicon wafer (ARC29) having an ARC29 (Brewer Science) film with a film thickness of 780 Å formed on the wafer surface, each composition solution was applied onto the substrate by spin coating, and then on a hot plate. In the resist film having a film thickness of 0.12 μm formed by performing PB at the temperature shown in Table 1 for 60 seconds, an ArF excimer laser exposure apparatus (numerical aperture: 0.78) manufactured by Nikon Corporation was used to pass through the mask pattern. Exposed. Thereafter, PEB was performed for 60 seconds at the temperature shown in Table 1, and then developed with a 2.38 mass% tetramethylammonium hydroxide aqueous solution at 25 ° C. for 30 seconds, washed with water, and dried to form a positive resist pattern. Formed. At this time, an exposure amount for forming a line-and-space pattern (1L1S) having a line width of 90 nm in a one-to-one line width was defined as an optimum exposure amount, and this optimum exposure amount was defined as sensitivity.

(Dense line depth of focus)
The focus fluctuation width when the pattern dimension resolved in the 90 nm 1L / 1S mask pattern is within ± 10% of the mask design dimension was defined as the dense line focal depth.

(Isolated line depth of focus)
The focus fluctuation width when the 90 nm / 1400 nmP pattern dimension resolved in the 140 nmL / 1400 nmP mask pattern falls within the range of 81-99 nm1L / 1400 nmP was defined as the isolated line focal depth.

(LWR)
When observing the 90nm 1L / 1S pattern resolved at the optimal exposure dose, when observing from the top of the pattern with Hitachi SEM: S9220, the line width was observed at 10 points at an arbitrary point, and the measurement variation was 3 sigma. The value expressed by is defined as LWR.

(Dimensions before minimum collapse)
In the 90 nm 1L / 1S mask pattern, the exposure dose was increased by 1 mJ / cm ² from the optimum exposure dose, and the pattern size at the previous exposure dose before the pattern collapsed was defined as the minimum collapse size.

  100 parts of the obtained polymer (A-1), 7.5 parts of the following radiation sensitive acid generator (acid generator) (B-1), and 0.7 part of the following acid diffusion controller (C) are mixed. As a result, a radiation sensitive resin composition was obtained. The following solvent (D-1) 1500 parts, the following solvent (D-2) 650 parts, and the following solvent (D-3) 30 parts were mixed to prepare a mixed solvent, and the resulting radiation-sensitive radiation was obtained. The photosensitive resin composition was dissolved to obtain a radiation sensitive resin composition solution. In addition, the compounding quantity of each solvent is shown by the mass ratio (mass part) with respect to 100 parts of polymers (A-1). Each measurement was performed using the obtained radiation-sensitive resin composition solution. The measurement results are shown in Table 2.

Radiation sensitive acid generator (B);
B-1: 1- (4-n-butoxynaphthyl) tetrahydrothiophenium nonafluoro-n-butanesulfonate B-2: Triphenylsulfonium 2-bicyclo [2.2.1] hept-2-yl-1, 1,2,2-tetrafluoroethanesulfonate B-3: triphenylsulfonium perfluoro-n-butanesulfonate B-4: 4-n-butoxy-1-naphthyltetrahydrothiophenium 2-bicyclo [2.2.1 ] Hept-2-yl-1,1,2,2-tetrafluoroethanesulfonate B-5: 4-n-butoxy-1-naphthyltetrahydrothiophenium nonafluorobutanesulfonate B-6: 4-cyclohexylphenyl-diphenyl Sulfonium nonafluoro-n-butanesulfonate

  The chemical formulas corresponding to the radiation sensitive acid generators (B-1) to (B-6) are the formulas (B-1) to (B-6) shown below.

Acid diffusion controller (C);
(C): tert-butyl-4-hydroxy-1-piperidinecarboxylate Chemical formula (C) corresponding to the acid diffusion controller (C) is as follows.

Solvent (D);
(D-1): Propylene glycol monomethyl ether acetate (D-2): Cyclohexanone (D-3): γ-butyrolactone

  The chemical formulas corresponding to each of the solvents (D-1) to (D-3) are the following formulas (D-1) to (D-3).

  A polymer (resin (A)) (A-2 to 4) was prepared with each molar ratio of the compound (S-1) and the like shown in the following “copolymer (resin (A))”. Example 1 except that each of the obtained polymers (A-2 to 4), the radiation-sensitive acid generator (B), and the acid diffusion controller (C) were mixed in the ratios shown in Table 1. In the same manner, radiation-sensitive resin compositions (Examples 2 to 10, Comparative Examples 1 to 13) were produced. The obtained radiation sensitive resin composition was dissolved in a mixed solvent in which the solvent (D) was mixed at a mixing ratio shown in Table 1 to obtain a radiation sensitive resin composition solution. In Table 1, “resin” means “copolymer (resin (A))”. Each measurement was performed using the obtained radiation-sensitive resin composition solution. The measurement results are shown in Table 2.

Copolymer (resin (A));
A-2: (S-1) 25 / (S-3) 25 / (S-5) 50 = 23.5 / 20.6 / 55.9 (molar ratio), Mw = 5768, Mw / Mn = 1 .698
A-3: (S-2) 25 / (S-4) 25 / (S-5) 50 = 23.1 / 24.1 / 52.8 (molar ratio), Mw = 6491, Mw / Mn = 1 .601
A-4: (S-2) 25 / (S-3) 25 / (S-6) 50 = 23.9 / 20.3 / 55.8 (molar ratio), Mw = 6811, Mw / Mn = 1 .348
A-5: (S-1) 50 / (S-5) 50 = 46.4 / 53.6 (molar ratio), Mw = 6332, Mw / Mn = 1.623
A-6: (S-2) 50 / (S-5) 50 = 45.8 / 54.2 (molar ratio), Mw = 6253, Mw / Mn = 1.648

  The present invention is extremely suitable as a radiation sensitive acid generator in a radiation sensitive resin composition useful as a chemically amplified resist.

Claims (7)

A sulfonate represented by the following general formula (1).

(R ^f is each independently a fluorine atom or a perfluoroalkyl group having 1 to 3 carbon atoms, R ¹ is a linear or branched alkyl group having 1 to 8 carbon atoms, R ² is independently a hydrogen atom, a fluorine atom, Or a linear or branched alkyl group having 1 to 8 carbon atoms which may be substituted with a fluorine atom, m represents an integer of 0 to 3, n represents an integer of 1 to 3. M ^{k +} represents a positive k-valent atom. Represents an ion, and k represents an integer of 1 to 4.) The sulfonate according to claim 1, wherein R ² is a hydrogen atom or a linear or branched alkyl group having 1 to 8 carbon atoms. The sulfonate according to claim 1, wherein R ² is a hydrogen atom, and R ^f is a fluorine atom.   The sulfonate according to claim 1, wherein the cation is a sulfonium cation or an iodonium cation.   The radiation sensitive resin composition containing the resin containing the sulfonate and acid dissociable group as described in any one of Claims 1-4. The radiation sensitive resin composition of Claim 5 in which the resin containing the said acid dissociable group contains the repeating unit represented by following General formula (8).

(In the general formula (8), R ¹⁵ represents a hydrogen atom or a monovalent organic group, a plurality of R ¹⁵ may be the same as or different from each other, and c and d are each an integer of 1 to 3. ) The resin containing an acid dissociable group is represented by the following general formula (11) and at least one of the repeating unit represented by the following general formula (9) and the repeating unit represented by the following general formula (10). The radiation sensitive resin composition of Claim 5 containing the repeating unit.

(In General Formula (9), General Formula (10) and General Formula (11), R ¹⁶ , R ¹⁸ and R ¹⁹ each independently represent a hydrogen atom or a methyl group. In General Formula (9), each R ¹⁷ is independently of each other a hydrogen atom, a hydroxyl group, a cyano group, or —COOR ²¹ (where R ²¹ is a hydrogen atom, a linear or branched alkyl group having 1 to 4 carbon atoms, or a cyclohexane having 3 to 20 carbon atoms). In general formula (11), each R ²⁰ is independently a monovalent alicyclic hydrocarbon group having 4 to 20 carbon atoms or a derivative thereof, or a straight chain having 1 to 4 carbon atoms. A chain or branched alkyl group, and at least one of R ²⁰ is the alicyclic hydrocarbon group or a derivative thereof, or any two R ²⁰ are bonded to each other, and ing Atom together form a divalent alicyclic hydrocarbon group or a derivative thereof having 4 to 20 carbon atoms, the remaining R ²⁰ is 4 alkyl group or a carbon number of straight-chain or branched having 1 to 4 carbon atoms 20 monovalent alicyclic hydrocarbon groups or derivatives thereof.