JPS6396902A - Manufacture of oxide semiconductor device for thermistor - Google Patents
Manufacture of oxide semiconductor device for thermistorInfo
- Publication number
- JPS6396902A JPS6396902A JP24341186A JP24341186A JPS6396902A JP S6396902 A JPS6396902 A JP S6396902A JP 24341186 A JP24341186 A JP 24341186A JP 24341186 A JP24341186 A JP 24341186A JP S6396902 A JPS6396902 A JP S6396902A
- Authority
- JP
- Japan
- Prior art keywords
- thermistor
- oxide semiconductor
- semiconductor element
- manufacture
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 13
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- 239000007772 electrode material Substances 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 238000000034 method Methods 0.000 description 4
- 229910000417 bismuth pentoxide Inorganic materials 0.000 description 2
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 description 2
- 235000009508 confectionery Nutrition 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、０℃〜１５０’（：の範囲で温度センサーお
よび突入電流防止用として利用できるところの負の抵抗
温度係数を有するサーミスタ用酸化物半導体素子の製造
方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to an oxide semiconductor for a thermistor having a negative temperature coefficient of resistance, which can be used as a temperature sensor and for inrush current prevention in the range of 0°C to 150°C. The present invention relates to a method for manufacturing an element.
従来の技術
従来、上記サーミスタ用酸化物半導体をディスク状素子
として製造する場合、銅の還元を防止するために空気中
１０ｏＯ℃〜１１５ｏ℃の温度で焼結させた焼結性の甘
い焼結体の両面に、ガラスフリット成分中にＢｉ２Ｏ５
を含んだ銀電極材料を用いて電極を設けるという製造方
法であった。BACKGROUND OF THE INVENTION Conventionally, when manufacturing the above-mentioned oxide semiconductor for thermistor as a disk-shaped element, a sintered body with a sweet sintering property is sintered in air at a temperature of 100°C to 115°C to prevent reduction of copper. Bi2O5 is included in the glass frit component on both sides of the glass frit.
The manufacturing method was to provide an electrode using a silver electrode material containing .
発明が解決しようとする問題点
どのような従来の構成では、上記サーミスタ用酸化物半
導体素子を高湿度雰囲気中で長時間使用した場合、抵抗
値経時変化率が大きく信頼性が低いという問題があった
。Problems to be Solved by the Invention In any conventional configuration, there is a problem in that when the above-mentioned oxide semiconductor element for a thermistor is used in a high humidity atmosphere for a long time, the rate of change in resistance value over time is large and reliability is low. Ta.
本発明はこのような問題点を解決するもので、上記サー
ミスタ用酸化物半導体素子を高湿度雰囲気中で長時間使
用するにア走り、抵抗値経時変化率をきわめで小さくす
ることを目的とするものである。The present invention solves these problems, and aims to make the oxide semiconductor element for a thermistor suitable for long-term use in a high-humidity atmosphere, and to minimize the rate of change in resistance value over time. It is something.
問題点を解決するための手段
この問題点を解決するために本発明は、金属元素として
マンガン、コバルト、ニッケル、銅の４種を合計１００
原子チ含有し、１０００℃〜１１５０℃の温度で焼結さ
せた焼結性の甘い焼結体を用いたサーミスタ用酸化物半
導体素子を得るために、ガラスフリット成分中にＢｉ２
Ｏ３を含まない銀電極材料を用いることを特徴とする製
造方法としたものである。Means for Solving the Problem In order to solve this problem, the present invention uses four types of metal elements, manganese, cobalt, nickel, and copper, in a total of 100
In order to obtain an oxide semiconductor element for a thermistor using a sweet sintered body containing atoms and sintered at a temperature of 1000°C to 1150°C, Bi2 is added to the glass frit component.
This manufacturing method is characterized by using a silver electrode material that does not contain O3.
作用
この構成により、上記サーミスタ用酸化物半導体素子は
高湿度雰囲気中での長時間使用に対し、抵抗値経時変化
率がきわめて小さくなるものである０
実施例
以下、本発明の実施例について説明する。市販の原料Ｍ
ｎ００５．Ｃ；ｏ５０．、ＮｉＯ，ＣｕＯをＭｎ ：
Ｃｏ ：Ｎｉ：Ｃｕ＝−４２： ４４ ： ９ ： ｔ
ｓ （原子％）の組成となるように配合した。これをボ
ールミルで混合後乾燥させ、７６０℃で仮焼した。これ
を再びボールミルで粉砕し、得られたスラリーの乾燥後
、ポリビニールアルコールをバインダーとして添加混合
し、所要景採ってディスク状に加圧成形し、これを空気
中１１００℃で２時間焼成し念。こうして得られたディ
スク状焼結体の両面に、ガラスフリット成分中にＢｉ２
Ｏ，を含んだ銀電極材料を焼付けて、オーミック接触を
得た。この素子の断面を鏡面研磨し金属顕微鏡で観察し
たところ、電極面直下に約１ｏｏμｍ程度の多孔質層が
確認された。そこで、このディスク状焼結体の両面にガ
ラスフリット成分中にＢｉ２Ｏ３を含まない銀電極材料
を焼付け、断面を金属顕微鏡で観察し友ところ、上記多
孔質層は確認されなかった。Function: With this configuration, the above-mentioned oxide semiconductor element for a thermistor has an extremely small rate of change in resistance value over time even when used for a long time in a high humidity atmosphere.Example: Examples of the present invention will be described below. . Commercially available raw material M
n005. C;o50. , NiO, CuO with Mn:
Co:Ni:Cu=-42:44:9:t
s (atomic %). This was mixed in a ball mill, dried, and calcined at 760°C. This was ground again in a ball mill, and after drying the resulting slurry, polyvinyl alcohol was added and mixed as a binder, the desired shape was taken and pressure-molded into a disk shape, and this was baked in air at 1100℃ for 2 hours. . Bi2 was added to the glass frit component on both sides of the disc-shaped sintered body thus obtained.
Ohmic contact was obtained by baking a silver electrode material containing O. When the cross section of this element was mirror-polished and observed with a metallurgical microscope, a porous layer of approximately 10 μm in thickness was confirmed directly below the electrode surface. Therefore, a silver electrode material containing no Bi2O3 in the glass frit component was baked on both sides of this disc-shaped sintered body, and the cross section was observed with a metallurgical microscope. However, no porous layer was observed.
このように２種類の銀電極材料を用いて製造し次サーミ
スタ用酸化物半導体素子の６０”Ｃ９０〜９５％湿度中
放置における抵抗値経時変化率を図面に示す。これから
明らかなように、本発明の製造方法により作製した試料
の抵抗値経時変化率ａは、従来のガラスフリット成分中
にＢｉ２Ｏ５を含む銀電極材料を用いて作製した試料の
抵抗値経時変化率すと比較し、高湿度雰囲気中で安定性
に優れていることがわかる。The figure shows the rate of change in resistance value over time of a 60"C oxide semiconductor element for a thermistor manufactured using two types of silver electrode materials and left in a humidity of 90 to 95%. As is clear from this, the present invention The rate of change in resistance value over time a of the sample fabricated by the manufacturing method of 1. It can be seen that the stability is excellent.
発明の効果
以上のように本発明によれば、上記サーミスタ用酸化物
半導体素子を製造する場合、銀電極材料としてガラスフ
リット成分中にＢｉ２Ｏ５を含まないものを用いること
により、高湿度雰囲気中での抵抗値経時変化率をきわめ
て小さくできるという効果が得られた。これにより、信
頼性に優れた上記サーミスタ用酸化物半導体素子を提供
できるものである。Effects of the Invention As described above, according to the present invention, when producing the above-mentioned oxide semiconductor element for a thermistor, by using a silver electrode material that does not contain Bi2O5 in the glass frit component, it is possible to produce the oxide semiconductor element for a thermistor in a high humidity atmosphere. The effect was obtained that the rate of change in resistance value over time could be made extremely small. Thereby, it is possible to provide the above-described oxide semiconductor element for a thermistor with excellent reliability.
図は本発明の製造方法を用いて得られたディスク状サー
ミスタ用酸化物半導体素子の６０℃９０〜９５チ湿度中
における抵抗値経時変化率を示すグラフであるＯ
ａ・・・・・・本発明の方法による抵抗値変化率、ｂ・
・・・・・従来の方法による抵抗値変化率０代理人の氏
名 弁理士 中 尾 敏 男 ほか１名ａ−本発明の方
５五による
抵抗値変化率
ｂ−４更釆の方法による
イ１！ｃｍイ直＊（ｔＪ
放！時Ｆｌ１１１（赴〕The figure is a graph showing the rate of change in resistance value over time of an oxide semiconductor element for a disk-shaped thermistor obtained using the manufacturing method of the present invention at 60°C, 90-95°C, and humidity. Resistance change rate by the method of the invention, b.
...Resistance value change rate according to conventional method 0 Name of agent: Patent attorney Toshio Nakao and one other person a - Resistance value change rate according to method 55 of the present invention b-4 A1 according to Saraka's method ! CM I direct* (tJ release! Time Fl111 (going)
Claims (1)
種を合計１００原子％含有し、１０００℃〜１１５０℃
の温度で焼結させた焼結体を用意し、この焼結体にガラ
スフリット成分中にＢｉ＿２Ｏ＿３を含まない銀電極材
料を形成することを特徴とするサーミスタ用酸化物半導
体素子の製造方法。The four metal elements are manganese, cobalt, nickel, and copper.
Contains a total of 100 atomic% of seeds, 1000°C to 1150°C
A method for producing an oxide semiconductor element for a thermistor, comprising: preparing a sintered body sintered at a temperature of , and forming a silver electrode material containing no Bi_2O_3 in a glass frit component on the sintered body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24341186A JPS6396902A (en) | 1986-10-14 | 1986-10-14 | Manufacture of oxide semiconductor device for thermistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24341186A JPS6396902A (en) | 1986-10-14 | 1986-10-14 | Manufacture of oxide semiconductor device for thermistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6396902A true JPS6396902A (en) | 1988-04-27 |
Family
ID=17103462
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24341186A Pending JPS6396902A (en) | 1986-10-14 | 1986-10-14 | Manufacture of oxide semiconductor device for thermistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6396902A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03165005A (en) * | 1989-11-22 | 1991-07-17 | Matsushita Electric Ind Co Ltd | Chip-shaped thermistor |
| JPH04286301A (en) * | 1991-03-15 | 1992-10-12 | Taiyo Yuden Co Ltd | Manufacture of ntc thermistor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5030083A (en) * | 1973-07-21 | 1975-03-26 | ||
| JPS5633801A (en) * | 1979-08-29 | 1981-04-04 | Nippon Telegraph & Telephone | High frequency thermistor porcelain and method of manufacturing same |
-
1986
- 1986-10-14 JP JP24341186A patent/JPS6396902A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5030083A (en) * | 1973-07-21 | 1975-03-26 | ||
| JPS5633801A (en) * | 1979-08-29 | 1981-04-04 | Nippon Telegraph & Telephone | High frequency thermistor porcelain and method of manufacturing same |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03165005A (en) * | 1989-11-22 | 1991-07-17 | Matsushita Electric Ind Co Ltd | Chip-shaped thermistor |
| JPH04286301A (en) * | 1991-03-15 | 1992-10-12 | Taiyo Yuden Co Ltd | Manufacture of ntc thermistor |
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