JPS6328520B2 - - Google Patents
Info
- Publication number
- JPS6328520B2 JPS6328520B2 JP56209607A JP20960781A JPS6328520B2 JP S6328520 B2 JPS6328520 B2 JP S6328520B2 JP 56209607 A JP56209607 A JP 56209607A JP 20960781 A JP20960781 A JP 20960781A JP S6328520 B2 JPS6328520 B2 JP S6328520B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- layer
- semiconductor layer
- active layer
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 8
- 230000007423 decrease Effects 0.000 claims description 2
- 230000010355 oscillation Effects 0.000 claims 1
- 230000000644 propagated effect Effects 0.000 claims 1
- 230000008878 coupling Effects 0.000 description 9
- 238000010168 coupling process Methods 0.000 description 9
- 238000005859 coupling reaction Methods 0.000 description 9
- 238000009826 distribution Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 7
- 238000005253 cladding Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 4
- 239000007791 liquid phase Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
- H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
- H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Description
【発明の詳細な説明】
本発明は半導体レーザに係り、特に集積レーザ
に不可欠な活性層と導波路層間において、高い結
合効率を与える構造を提供するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor laser, and in particular provides a structure that provides high coupling efficiency between an active layer and a waveguide layer, which are essential for integrated lasers.
同一基板上に、半導体レーザなどの光素子を複
数個集積化させるためには、光活性素子に低損失
な導波路が結合した構造を成していることが必須
であり、これらの素子を高性能で動作させるため
には、活性層と導波路の結合が十分大きいことが
重要である。これまで、このような集積レーザを
目的とし、活性層と導波路層の高結合化を目指し
た構造の１つとして、図１に示したテーパ結合が
ある。図において、１は1nPの如き半導体基板、
２は導波路層、３は活性層、４はクラツド層、６
はキヤツプ層である。光は領域Ａにおいて発生せ
しめられて領域Ｃに結合されるが、上記領域Ａ，
Ｃ間の領域Ｂにおいて、活性層の層厚が一様に変
化するテーパ領域を有している。図２に図１の
―ａ断面及び光分布を示すが如く、領域Ａにお
ける光分布に散乱が生じないように、テーパ領域
において光分布を一様にかつ徐々に変化させて領
域Ｃにおける光分布に一致させて高結合を図ろう
というものであり、通常90％程度の高い結合効率
が得られるという利点を有している。しかし、上
記テーパ結合構造は、徐々に活性層３の厚みを変
化させる必要があり、多くは液相成長により作製
されるが、作製するためには装置に特別な工夫を
必要とし、かつ、作製されたテーパの形状の再現
性に問題があつた。すなわち、液相成長によるテ
ーパ領域の作製方法は図３に示すごとく導波路層
２の上に活性層３を成長する際に黒鉛ボート９中
のメルト７が遮へい板８の下から流出して成長す
ることを利用している。従つて、メルト７の温度
や粘度に応じて遮へい板８の設定高ｈを調整しな
ければならず、この作業が困難なためテーパ形状
の再現性に問題を残していた。さらに、図３から
わかるように、テーパ領域Ｂと領域Ａの成長のた
めの雰囲気が大きく異なるため、それぞれの組成
が異なつてしまうという欠点を有していた。 In order to integrate multiple optical devices such as semiconductor lasers on the same substrate, it is essential to have a structure in which a low-loss waveguide is coupled to a photoactive device. In order to operate at high performance, it is important that the coupling between the active layer and the waveguide is sufficiently large. Until now, one of the structures aimed at achieving high coupling between the active layer and the waveguide layer for such an integrated laser is the taper coupling shown in FIG. 1. In the figure, 1 is a semiconductor substrate such as 1nP,
2 is a waveguide layer, 3 is an active layer, 4 is a cladding layer, 6
is the cap layer. Light is generated in region A and coupled to region C;
In region B between C, there is a tapered region in which the thickness of the active layer changes uniformly. As shown in FIG. 2, which shows the -a cross section and light distribution in FIG. The aim is to achieve high binding by matching the 200°C, and it has the advantage of achieving high binding efficiency, usually around 90%. However, the taper bonding structure described above requires gradual changes in the thickness of the active layer 3, and is often fabricated by liquid phase growth, which requires special ingenuity in the equipment and There was a problem with the reproducibility of the taper shape. That is, as shown in FIG. 3, the method for manufacturing the tapered region by liquid phase growth is such that when growing the active layer 3 on the waveguide layer 2, the melt 7 in the graphite boat 9 flows out from under the shielding plate 8 and grows. I'm taking advantage of what I do. Therefore, it is necessary to adjust the set height h of the shielding plate 8 according to the temperature and viscosity of the melt 7, and since this work is difficult, there remains a problem in the reproducibility of the taper shape. Furthermore, as can be seen from FIG. 3, since the atmospheres for growing tapered region B and region A are significantly different, there is a drawback that the compositions of each region are different.
本発明は、上述した従来技術の欠点を改善する
もので、活性層厚を変化させるのではなく、活性
層幅を変化させることによりテーパ領域を形成
し、高い結合効率を得ることができかつ平面プロ
セスにより作製できる構造を有する半導体レーザ
を提供するものである。 The present invention improves the above-mentioned drawbacks of the prior art, and forms a tapered region by changing the width of the active layer instead of changing the thickness of the active layer, thereby achieving high coupling efficiency and a flat surface. The present invention provides a semiconductor laser having a structure that can be manufactured by a process.
以下、図面により本発明を詳細に説明する。 Hereinafter, the present invention will be explained in detail with reference to the drawings.
GaInAsP結晶を用いた本発明の実施例の斜視
図を図４ａに、その―ａ断面図を図４ｂに、
また、ストライプ部分を露出させたときの上面図
を図４ｃに各々示す。図において、１１はｎ型
InP基板、１２はｎ型GauIn1―uAsvP1―vから成
る導波路層、１３はアンドーブGaxIn1―xAsy
P1―yから成る活性層、１４はｐ型InPクラツド
層、１５はｐ型InP埋め込み層、１６はｐ型
GaInAsPから成るキヤツプ層であり、導波路層
１２と活性層１３とはｘ＞ｕ，ｙ＞ｖなる関係を
持つ。なお、図には他端は明示していないが、図
示したと同じ構成もしくは、へき開面であつても
よく、どのような素子を結合するかによつて決定
される。これらの半導体層は液相エピタキシヤル
法，気相エピタキシヤル法，分子線エピタキシヤ
ル法などにより形成することができる。１７及び
１８は各々ｐ側及びｎ側の電極である。ここに、
領域Ａは幅が一定なストライブ状活性層１３と導
波路層１２からなり、領域Ｃはストライプ状導波
路１２のみから成り、また、領域Ｂは本発明の特
徴である活性層１３の幅が連続的に変化するテー
パ領域である。領域Ａで発生した光は、該領域Ａ
の屈折率分布で決まる固有の光分布を有するが、
光がＺ方向に伝搬する際、領域Ｂにおいて活性層
幅が一様に減少するため、上記光分布はほとんど
散乱されることなく一様に変形し、領域Ｃと領域
Ｂの境界においては、上記変形した光分布は領域
Ｃに固有の光分布に一致して領域Ｃ内を伝搬す
る。すなわち、テーパ領域Ｂにおける光の散乱は
極めて小さいため、高い効率で光を領域Ａから領
域Ｃに結合させることができる。上記はＺ方向に
光が伝搬する例について述べたが、一Ｚ方向、す
なわち光が領域Ｃから領域Ａに伝搬する場合も同
様である。 A perspective view of an embodiment of the present invention using GaInAsP crystal is shown in FIG. 4a, and a sectional view taken along the line-a is shown in FIG.
Moreover, a top view when the stripe portion is exposed is shown in FIG. 4c. In the figure, 11 is an n-type
InP substrate, 12 is a waveguide layer consisting of n-type Ga u In 1 - u As v P 1 - v , 13 is an undoped Ga x In 1 - x As y
Active layer consisting of P 1 - y , 14 is p-type InP cladding layer, 15 is p-type InP buried layer, 16 is p-type
This is a cap layer made of GaInAsP, and the relationship between the waveguide layer 12 and the active layer 13 is x>u, y>v. Although the other end is not clearly shown in the figure, it may have the same configuration as shown or a cleavage plane, and is determined depending on what kind of elements are to be coupled. These semiconductor layers can be formed by a liquid phase epitaxial method, a vapor phase epitaxial method, a molecular beam epitaxial method, or the like. 17 and 18 are p-side and n-side electrodes, respectively. Here,
Region A consists of a striped active layer 13 and a waveguide layer 12 with a constant width, region C consists only of a striped waveguide 12, and region B has a striped active layer 13 with a constant width. It is a continuously changing taper region. The light generated in area A is
It has a unique light distribution determined by the refractive index distribution of
When light propagates in the Z direction, the active layer width uniformly decreases in region B, so the above-mentioned light distribution is uniformly deformed with almost no scattering, and at the boundary between region C and region B, the above-mentioned The deformed light distribution propagates within region C in accordance with the light distribution specific to region C. That is, since the scattering of light in the tapered region B is extremely small, light can be coupled from the region A to the region C with high efficiency. Although an example in which light propagates in the Z direction has been described above, the same applies to the case in which light propagates in one Z direction, that is, from region C to region A.
図５に光が伝搬する様子を示す。図5bは光結
合部分の拡大図であり、―，―，―
，―，―は切断面を示し、図５ａに各
切断面に対応してその断面，，，，と
光分布とを示している。光閉込め効果は層の屈折
率と断面積とにより決まる。活性層１３の有する
屈折率は導波路層１２の屈折率より大きい。従つ
て、断面―の位置においては光は主として活
性層１３内に閉込められているが、活性層１３の
断面積が小さくなるのに従つて、光は導波路層１
２内に閉込められる量が多くなり、断面―の
位置においては領域Ｃ固有の光分布となつてい
る。 Figure 5 shows how light propagates. Figure 5b is an enlarged view of the optical coupling part.
, -, - indicate cut planes, and FIG. 5a shows the cross sections, , , and light distribution corresponding to each cut plane. The light confinement effect depends on the refractive index and cross-sectional area of the layer. The refractive index of the active layer 13 is greater than the refractive index of the waveguide layer 12. Therefore, at the position of the cross section, the light is mainly confined within the active layer 13, but as the cross-sectional area of the active layer 13 becomes smaller, the light is confined within the waveguide layer 1.
The amount of light trapped within 2 increases, and the light distribution becomes unique to region C at the position of the cross section.
なお、図４においてテーパ領域Ｂの具体的な形
状寸法例として、導波路層１２が2μm程度テーパ
領域Ｂの長さは50μm程度であるとき、テーパ部
の先端は0.5μm以下において本発明の効果が顕著
である。 In addition, as a specific example of the shape and size of the tapered region B in FIG. 4, when the waveguide layer 12 is about 2 μm and the length of the tapered region B is about 50 μm, the effect of the present invention is obtained when the tip of the tapered portion is 0.5 μm or less. is remarkable.
図４の実施例の作製行程の一例を図６に示す。
ウエハは２回の結晶成長により作製される。ま
ず、第１回目の成長により、InP基板１１上に導
波路層１２、活性層１３，InPクラツド層１４を
順次成長する〔図６ａ〕。次に、テーパ状を有す
るくさび形のストライプが残るようにクラツド層
１４と活性層１３をエツチングにより除去する
〔図６ｂ〕。さらに、上記くさび形ストライプに重
畳するように再度直線状ストライプマスクをほど
こし、、InP基板１までエツチングを行なう〔図
６ｃ〕。次に、第２回目の成長によりテーパ形状
を有するストライプをInPにより完全に埋め込む
〔図６ｄ〕。このように、活性層１３の幅をテーパ
状にすることは、図１に示したように活性層厚を
テーパ状にするのと比べて、結晶成長装置に特別
な工夫なしに平面プロセス行程で作製が可能であ
り、その形状も再現性よく作製することができ
る。 An example of the manufacturing process of the embodiment shown in FIG. 4 is shown in FIG.
The wafer is fabricated by two rounds of crystal growth. First, in the first growth, a waveguide layer 12, an active layer 13, and an InP cladding layer 14 are sequentially grown on an InP substrate 11 (FIG. 6a). Next, the cladding layer 14 and the active layer 13 are removed by etching so that tapered wedge-shaped stripes remain [FIG. 6b]. Furthermore, a linear stripe mask is applied again so as to overlap the wedge-shaped stripes, and etching is performed up to the InP substrate 1 [FIG. 6c]. Next, in the second growth, the tapered stripes are completely filled with InP [FIG. 6d]. In this way, tapering the width of the active layer 13 is easier than tapering the thickness of the active layer as shown in FIG. It can be manufactured, and its shape can be manufactured with good reproducibility.
なお、共振器としては、、図７ａに示した領域
Ａに周期的な凹凸１９を設けたDFB（分布帰還）
型、もしくは、図７ｂに示した双対する領域Ｃに
周期的凹凸１９を設けたDBR（分布反射）型とす
ることにより実現することができる。 Note that the resonator is a DFB (distributed feedback) in which periodic unevenness 19 is provided in the region A shown in FIG. 7a.
This can be realized by using a DBR (distributed reflection) type in which periodic unevenness 19 is provided in the dual regions C shown in FIG. 7b.
上記の実施例は、活性層１３と導波路層１２が
直接接合した構造を用いて示したが、活性層１３
と導波路層１２間にInPなどの低屈折率の層が介
在する構造などにも適用が可能である。また、
GaInAsP／InP結晶を用いた実施例について示し
たがAlGaAs系の混晶などについても適用可能で
ある。 Although the above embodiment has been shown using a structure in which the active layer 13 and the waveguide layer 12 are directly bonded, the active layer 13
It is also applicable to a structure in which a low refractive index layer such as InP is interposed between the waveguide layer 12 and the waveguide layer 12. Also,
Although an example using GaInAsP/InP crystals has been shown, it is also applicable to AlGaAs-based mixed crystals.
以上、詳細に説明したように、本発明によれば
簡単な平面プロセスにより、再現性よく高い結合
係数を有するテーパ結合構造が作製でき、従つ
て、低しきい値，高効率な集積レーザの実現が期
待できる。 As described in detail above, according to the present invention, a tapered coupling structure with a high coupling coefficient can be fabricated with good reproducibility through a simple planar process, thereby realizing a low threshold and highly efficient integrated laser. can be expected.
図１は活性層厚が変化する従来のテーパ結合構
造例を示す斜視図、図２は図１の―ａ断面図
及び光分布の変化の様子を示した図、図３は図１
の従来例を形成する方法を説明するための断面
図、図４ａは本発明の実施例を示す斜視図、図４
ｂは図４ａの―ａ断面図、図４ｃは図４ａの
―ａ断面の上面図、図５ａ，ｂは本発明装置
における光の伝搬を示す断面図及び斜視図、図６
ａ，ｂ，ｃ，ｄは本発明の実施例の作製行程を示
す斜視図、図７は本発明をDFB及びDBR構造に
適用した実施例である。
１……InP基板、２……GauIn1―uAsvP1―v導
波路層、３……GaxIn1―xAsyP1―y活性層、４…
…InPクラツド層、５……InP埋め込み層、６…
…GaInAsPキヤツプ層、７，８……電極、９…
…周期的な凹凸、１１……ｎ型InP基板、１２…
…ｎ型GauIn1―uAsvP1―v導波路層、１３……
GaxIn1―xAsyP1―y活性層、１４……ｐ型InPク
ラツド層、１５……ｐ型InP埋め込み層、１６…
…ｐ型GaInAsPキヤツプ層、１７……ｐ側電極、
１８……ｎ側電極。
FIG. 1 is a perspective view showing an example of a conventional tapered coupling structure in which the active layer thickness changes, FIG. 2 is a cross-sectional view taken along the line a in FIG. 1 and a diagram showing how the light distribution changes, and FIG.
FIG. 4a is a cross-sectional view for explaining a method of forming a conventional example of the present invention, and FIG. 4a is a perspective view showing an embodiment of the present invention.
b is a sectional view taken along the line a in FIG. 4a, FIG. 4c is a top view of the section taken along the line a shown in FIG. 4a, FIGS.
a, b, c, and d are perspective views showing the manufacturing process of an embodiment of the present invention, and FIG. 7 is an embodiment in which the present invention is applied to a DFB and DBR structure. 1...InP substrate, 2...Ga u In 1 - u As v P 1 - v waveguide layer, 3... Ga x In 1 - x As y P 1 - y active layer, 4...
...InP cladding layer, 5...InP buried layer, 6...
...GaInAsP cap layer, 7, 8... electrode, 9...
...Periodic unevenness, 11...n-type InP substrate, 12...
...n-type Ga u In 1 - u As v P 1 - v waveguide layer, 13...
Ga x In 1 - x As y P 1 - y active layer, 14... p-type InP cladding layer, 15... p-type InP buried layer, 16...
... p-type GaInAsP cap layer, 17 ... p-side electrode,
18...n-side electrode.
Claims (1)
の半導体層より禁制帯幅が小にして導波路として
供される第２の半導体層と、前記第１，第２の半
導体層よりさらに禁制帯幅が小にして活性層とし
て供される第３の半導体層と、前記第１の半導体
層と同程度の禁制帯幅を有する第４の半導体層と
が順次積層され、かつ、一部活性層が除去されて
いることにより前記第１，第２，第３，第４の半
導体層から成る領域Ａと、前記第１，第２，第４
の半導体層から成る領域Ｃとの両方にわたつて光
を伝播させて発振せしめるか、もしくは、領域Ａ
のみにおいて発振せしめ、該発振光を前記領域Ｃ
に伝播させるように構成された半導体レーザにお
いて、前記領域Ａと領域Ｃとの中間に位置しかつ
前記第１，第２，第３及び第４の半導体層を有す
る領域Ｂのうち、層厚及び幅が一定な前記第２の
半導体層上の前記第３の半導体層が層厚一定でか
つ前記領域Ａから前記領域Ｃへ行くに従つて幅が
連続的に減少するように構成されたことを特徴と
する半導体レーザ。1 a first semiconductor layer on a semiconductor substrate;
a second semiconductor layer whose forbidden band width is smaller than that of the semiconductor layer and serves as a waveguide; and a third semiconductor layer whose forbidden band width is smaller than that of the first and second semiconductor layers and which serves as an active layer. and a fourth semiconductor layer having a forbidden band width comparable to that of the first semiconductor layer are sequentially stacked, and a part of the active layer is removed. , a third, and a fourth semiconductor layer;
Either the light is propagated across both the region C consisting of the semiconductor layer and the region A is oscillated, or
The oscillation light is caused to oscillate only in the region C.
In the semiconductor laser configured to allow propagation to occur, the layer thickness and The third semiconductor layer on the second semiconductor layer, which has a constant width, has a constant thickness and is configured such that the width continuously decreases from the region A to the region C. Features of semiconductor laser.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56209607A JPS58114476A (en) | 1981-12-28 | 1981-12-28 | Semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56209607A JPS58114476A (en) | 1981-12-28 | 1981-12-28 | Semiconductor laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58114476A JPS58114476A (en) | 1983-07-07 |
| JPS6328520B2 true JPS6328520B2 (en) | 1988-06-08 |
Family
ID=16575603
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56209607A Granted JPS58114476A (en) | 1981-12-28 | 1981-12-28 | Semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58114476A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105826812A (en) * | 2015-01-27 | 2016-08-03 | 华为技术有限公司 | Tunable laser and method of tuning laser |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5119460A (en) * | 1991-04-25 | 1992-06-02 | At&T Bell Laboratories | Erbium-doped planar optical device |
| FR2684823B1 (en) * | 1991-12-04 | 1994-01-21 | Alcatel Alsthom Cie Gle Electric | SEMICONDUCTOR OPTICAL COMPONENT WITH EXTENDED OUTPUT MODE AND MANUFACTURING METHOD THEREOF. |
| US5844929A (en) * | 1994-02-24 | 1998-12-01 | British Telecommunications Public Limited Company | Optical device with composite passive and tapered active waveguide regions |
| WO1995023445A1 (en) * | 1994-02-24 | 1995-08-31 | British Telecommunications Public Limited Company | Semiconductor device |
| US5574742A (en) * | 1994-05-31 | 1996-11-12 | Lucent Technologies Inc. | Tapered beam expander waveguide integrated with a diode laser |
| US6381380B1 (en) * | 1998-06-24 | 2002-04-30 | The Trustees Of Princeton University | Twin waveguide based design for photonic integrated circuits |
| KR100958338B1 (en) * | 2007-12-18 | 2010-05-17 | 한국전자통신연구원 | Optical amplifier integrated super luminescent diode and external cavity laser using this |
| JP7279658B2 (en) * | 2020-02-12 | 2023-05-23 | 住友電気工業株式会社 | Semiconductor optical device and manufacturing method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57183091A (en) * | 1981-05-08 | 1982-11-11 | Toshiba Corp | Manufacture of optical integrated circuit |
-
1981
- 1981-12-28 JP JP56209607A patent/JPS58114476A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57183091A (en) * | 1981-05-08 | 1982-11-11 | Toshiba Corp | Manufacture of optical integrated circuit |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105826812A (en) * | 2015-01-27 | 2016-08-03 | 华为技术有限公司 | Tunable laser and method of tuning laser |
| CN105826812B (en) * | 2015-01-27 | 2020-04-21 | 华为技术有限公司 | Tunable laser and method of tuning a laser |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58114476A (en) | 1983-07-07 |
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